JP5375351B2 - Manufacturing method of semiconductor circuit member - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor circuit member, in which pre-setting type sealing is possible and a connection can be made while excellently removing an oxide film formed on a solder surface. <P>SOLUTION: The present invention relates to the method of manufacturing the semiconductor circuit member by bonding a first electronic member having a first terminal provided on a first substrate and a second electronic member having a second terminal provided on a second substrate together through a circuit member-connecting adhesive. Conditions represented by expression (1) of t<SB>1</SB>&le;(tc+ts) and expression (2) of (tc+ts)&le;t<SB>2</SB>are satisfied, wherein tc is the height of the first terminal, ts the height of the second terminal, t<SB>1</SB>the distance between the first substrate and second substrate of the semiconductor circuit member, and t<SB>2</SB>the thickness of the circuit member-connecting adhesive before the bonding. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor circuit member.

  In recent years, as electronic devices have become smaller and more functional, electronic components mounted on electronic devices are required to be smaller, thinner, higher density, and faster. In mobile devices such as mobile phones, the higher the resolution and density of images and the greater the amount of information to be transmitted, the higher the speed and functionality of logic and the larger the capacity of the memory, the more it will be installed. The volume for components such as semiconductor chips is shrinking.

  Under such circumstances, the semiconductor chip is required to be downsized and highly integrated, and when a semiconductor package is formed, a multi-layer stack is required. In multi-layered mounting, flip-chip connection is often used instead of the conventional wire bonding method of connecting a substrate and a component by wire, and connecting via a conductive protruding electrode called a bump. It's getting on.

  In the flip-chip connection method, the electrical connection between the substrate and the component, etc. includes a method of forming a metal bond via a solder bump, a method of forming a metal bond by using a gold bump and tin, etc., a gold bump A method of forming a metal joint by fusing to the substrate wiring by applying an ultrasonic wave, a method of contacting and connecting the gold bump and the substrate wiring via an anisotropic conductive adhesive, etc., directly pressing the gold bump against the wiring A method of making contact is used.

  In any of these methods, the space between the semiconductor chip and the circuit board is filled with a sealing resin in order to maintain electrical connection between the bumps and the wiring on the circuit board. As a method of sealing filling, a method of filling a gap between a semiconductor chip and a circuit board with a liquid underfill material by using a capillary phenomenon after bonding bumps by soldering or ultrasonic bonding is generally used. is there.

  In recent years, a method of connecting or bonding a substrate and a component using an anisotropic conductive adhesive (ACF) or a non-conductive adhesive sheet (NCF) is known. In these methods, since ACF and NCF also function as an underfill material, the time for sealing can be shortened compared with the case where liquid resin is filled. Furthermore, from the viewpoint of simplifying the process, a method of supplying a resin in a wafer state, a method of contributing to metal bonding using a resin imparted with a flux function, and the like have been proposed (see Patent Documents 1 to 4).

Japanese Patent Laid-Open No. 2000-10082 JP 2003-142529 A JP 2001-332520 A JP 2005-028734 A

  By the way, as a method for further thinning and increasing the density of the semiconductor package, there are proposed a method in which through electrodes are opened in a semiconductor chip and a thinned chip having the through electrodes is stacked, or a copper bump is used as a bump. ing. In these technologies, with the thinning of the semiconductor, the gap between the chips stacked by the through electrode and the gap between the chip and the circuit board are narrowed, and the pitch between the terminals is becoming finer. It is difficult to inject sealing resin into the gap after connection. For this reason, there is a need for a pre-type sealing resin system in which the sealing resin is arranged before connection, not after connection.

  In addition, when electrically connecting the terminals of the semiconductor chip and the terminals of the circuit board, for example, when trying to form a metal joint using solder, the terminals are connected to each other due to an oxide film being formed on the solder surface. In some cases, the connection resistance could not be lowered sufficiently. For this reason, there is also a demand for a technique capable of satisfactorily electrically connecting terminals to be connected.

  Therefore, the present invention has been made in view of such circumstances, and can be preliminarily sealed, and can obtain good electrical connection between terminals in an electronic member to be connected. An object of the present invention is to provide a method for manufacturing a semiconductor circuit member.

In order to achieve the above object, a method of manufacturing a semiconductor circuit member according to the present invention includes a first electronic member having a first terminal provided on a first substrate and a second terminal having a second terminal provided on a second substrate. A semiconductor circuit member manufacturing method for obtaining a semiconductor circuit member by facing two electronic members so that a first terminal and a second terminal face each other and bonding them through an adhesive for connecting a circuit member, The height of one terminal is tc, the height of the second terminal is ts, the distance between the first substrate and the second substrate in the semiconductor circuit member is t ₁ , and the thickness of the adhesive for connecting the circuit member before bonding is set to When t ₂ is satisfied, the conditions represented by the formula (1); t ₁ ≦ (tc + ts) and the formula (2); (tc + ts) ≦ t ₂ are satisfied.

  In the method for manufacturing a semiconductor circuit member of the present invention, the circuit member connection circuit is provided between the first substrate and the second substrate by satisfying the conditions represented by the above formulas (1) and (2). The adhesive can be satisfactorily filled, and the first terminal and the second terminal facing each other can be securely adhered. Accordingly, the first-stage resin sealing can be performed satisfactorily, and the first terminal and the second terminal are securely in close contact with each other. In addition, for example, even if solder is disposed on the eleventh and / or second terminals, the first terminal and the second terminal are in close contact with each other, so that the solder sandwiched between them is sufficiently stretched. It is also possible to form a metal bond while removing the oxide film well.

  In the method for producing a semiconductor circuit member of the present invention, as the adhesive for connecting a circuit member, an adhesive containing an adhesive composition containing a high molecular weight component, a thermosetting resin, and a curing agent for this thermosetting resin is used. Is preferred. This makes it possible to more satisfactorily fill the circuit member connecting adhesive between the first substrate and the second substrate when performing the first-stage sealing.

  The adhesive for connecting circuit members further comprises at least one component selected from the group consisting of a filler, a high molecular weight fine particle having a crosslinked structure, and a powdery compound having a melting point lower than that of solder and solid at room temperature. It is preferable to include. By including these components, it is possible to further improve the reliability of the connection portion between the first substrate and the second substrate.

  Furthermore, it is preferable that the fluidity | liquidity in the crimping | compression-bonding temperature when the adhesive for circuit member connection is measured by a disk flow is 1.1-2.5. As a result, the adhesive for connecting the circuit member at the time of connection can be satisfactorily removed from between the first terminal and the second terminal, and can be satisfactorily filled between the first substrate and the second substrate, Further, generation of voids can be prevented and generation of voids can be greatly reduced.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor circuit member which can perform a connection, being able to perform front-end type resin sealing and removing the oxide film formed in the solder surface satisfactorily is provided. It becomes possible.

It is a figure which shows typically the manufacturing process of the semiconductor circuit member of suitable embodiment.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings as necessary. The method of manufacturing a semiconductor circuit member according to this embodiment includes a first electronic member having a first terminal provided on a first substrate and a second electronic member having a second terminal provided on a second substrate. The first terminal and the second terminal face each other so as to face each other and are bonded via a circuit member connecting adhesive to obtain a semiconductor circuit member, and the height of the first terminal is tc, When the height of the two terminals is ts, the distance between the first substrate and the second substrate in the semiconductor circuit member is t ₁ , and the thickness of the adhesive for connecting the circuit member before bonding is t ₂ , the formula (1 ); T ₁ ≦ (tc + ts) and the expression (2); (tc + ts) ≦ t ₂ are satisfied. Here, a case where a semiconductor chip is used as the first electronic member and a circuit board is used as the second electronic member will be described as an example.

FIG. 1 is a diagram schematically showing a manufacturing process of a semiconductor circuit member according to a preferred embodiment. In this embodiment, first, as shown in FIG. 1A, an adhesive film laminate for semiconductor processing (hereinafter abbreviated as “adhesive film laminate 10”) is prepared. The adhesive film laminate 10 includes a base material 2, a pressure-sensitive adhesive layer 4 made of a pressure-sensitive adhesive, and a circuit member connection adhesive layer made of a circuit member connection adhesive (hereinafter abbreviated as "adhesive layer 6"). It has a structure laminated in this order. Adhesive layer in the adhesive film laminate 106 has a thickness t _2. The detailed configuration of the adhesive film laminate 10 will be described later.

  Next, as illustrated in FIG. 1B, the adhesive film laminate 10 is attached to the semiconductor wafer 20. The semiconductor wafer 20 includes a semiconductor portion 22 made of a semiconductor and a terminal 24 having a height tc protruding from the semiconductor portion 22 in order to connect with a terminal on the circuit board. By processing the semiconductor wafer 20, a semiconductor chip 30 (first electronic member) described later is obtained. In this step, the adhesive film laminate 10 is attached to the semiconductor wafer 20 so that the adhesive layer 6 covers the terminals 24.

  Examples of the terminal 24 in the semiconductor wafer 20 include gold bumps, copper bumps, and nickel bumps formed by plating, vapor deposition, or using metal wires. For bumps formed using metal wires, the bump tips are crushed in advance so that there is no variation in height after connection due to the effect of connection load or the difference in the exclusion of the adhesive for connecting circuit members. It is desirable that the bump be subjected to leveling for flattening. In addition, a conductive resin bump formed of a resin and a resin core bump in which a resin is used as a core and a metal is deposited on the surface thereof can also be applied. The terminal 24 does not need to be made of a single metal, and may include a plurality of metal components selected from gold, silver, copper, nickel, indium, palladium, tin, bismuth, and the like. A plurality of layers may be laminated. The terminal 24 may be pre-installed with tin or alloy solder in order to perform metal bonding with the terminal of the circuit board.

  Bonding of the adhesive film laminate 10 to the semiconductor wafer 20 can be performed using a commercially available film sticking apparatus or a laminator. The adhesive film laminate 10 used for pasting may be in a sheet state, in a roll state in which the sheet is wound, or may be processed according to the outer shape of the wafer. At the time of pasting, it is preferable to perform heating, pressurization, and further vacuum suction so that no voids are caught between the semiconductor wafer 20 and the adhesive layer 6. Therefore, it is preferable that the film sticking apparatus and the laminator have a heating mechanism, a pressurizing mechanism, and a vacuum suction mechanism.

  The adhesion of the adhesive film laminate 10 to the semiconductor wafer 20 is preferably performed at a temperature at which the adhesive for connecting circuit members constituting the adhesive layer 6 is softened. For example, it can be performed while heating at 40 to 80 ° C, preferably 50 to 80 ° C, more preferably 60 to 80 ° C.

  If the bonding is performed at a temperature lower than the temperature at which the circuit member connecting adhesive is softened, the terminal 24 is not sufficiently embedded in the adhesive layer 6, and as a result, voids may be caught between them. In this case, the adhesive layer 6 may be peeled off during dicing, which will be described later, the adhesive layer 6 may be deformed when the semiconductor chip after dicing is taken out, and the alignment recognition mark becomes difficult to identify. May be difficult to align, and voids may remain after connection, which may reduce connection reliability.

  On the other hand, if the bonding is performed at an excessively high temperature, the adhesive layer 6 is hardened and there is a possibility that the adhesive force may be lost, and heat shrinkage occurs when cooling after the bonding, which warps the semiconductor wafer 20. May cause it to occur.

  After bonding the adhesive film laminate 10 to the semiconductor wafer 20 in this way, the semiconductor wafer 20 is processed to form the semiconductor chip 30.

  That is, first, as shown in FIG. 1C, the semiconductor portion 22 in the semiconductor wafer 20 is ground to thin the semiconductor portion 22. The grinding of the semiconductor portion 22 in the semiconductor wafer 20 is performed from the side opposite to the terminal 24. Grinding can be performed using a general back grind (B / G) apparatus. In this process, in order to uniformly grind the semiconductor portion 22 without uneven thickness, it is preferable that the adhesive layer 6 is uniformly attached to the semiconductor wafer 20 without unevenness. For this purpose as well, it is desirable to apply the adhesive film laminate 10 to the semiconductor wafer 20 using the above-described application device.

  Next, in order to easily perform dicing, which will be described later, on the ground semiconductor wafer 20 with the adhesive film laminate 10, a dicing tape 52 is attached to the ground surface as shown in FIG. It is preferable to fix to etc. Affixing of the dicing tape 52 can be performed in the same process as the fixing to the dicing frame 50 using a general wafer mounter. A commercially available product can be applied as the dicing tape 52, and for example, a UV curable type or a pressure sensitive type may be used.

  Moreover, as shown in FIG.1 (d), the base material 2 and the adhesion layer 4 in the adhesive film laminated body 10 are peeled. This step is preferably performed after applying the dicing tape as described above and fixing the dicing tape to the dicing frame. Peeling of the base material 2 and the pressure-sensitive adhesive layer 4 from the adhesive film laminate 10 can be performed using a general film peeling apparatus.

  Then, as shown in FIG. 1E, the semiconductor wafer 20 in a state where the circuit member adhesive layer 6 is in close contact is diced. As a result, the semiconductor chip 20 is obtained in which the semiconductor wafer 20 is divided into pieces and the circuit member connecting adhesive layer 6 is in close contact so as to cover the terminals 24. Dicing of the semiconductor wafer 20 can be performed by cutting with a dicing blade 60 or the like using a general dicing apparatus. Then, after dicing, the dicing frame 50 and the dicing tape 52 are appropriately peeled to obtain the separated semiconductor chip 30.

  The separated semiconductor chips 30 can be individually picked up by a general pickup device. These may be packed in a tray for storage, or may be directly mounted on a circuit board using a flip chip bonder.

  The semiconductor chip 30 thus obtained is bonded to a circuit board 40 (second electronic member) via a circuit board connecting adhesive layer 6 as shown in FIG. The semiconductor chip 30 is mounted on the substrate 40.

  The circuit board 40 has, for example, a configuration in which wiring (not shown) is formed on the substrate 42, and a height protruding from the substrate 42 for connecting a part of the wiring to the semiconductor chip. A ts terminal 44 is provided. Examples of the substrate 42 include an organic substrate and a ceramic substrate. The circuit board 40 may be a semiconductor circuit board.

  The mounting can be performed using, for example, a known flip chip bonder. At this time, the terminals 24 in the semiconductor chip 30 and the terminals 44 in the circuit board 40 are aligned. The alignment is performed, for example, by providing a predetermined alignment mark for alignment in advance on each of the semiconductor chip 30 and the circuit board 40 and confirming this through the transparent adhesive layer 6. it can.

And the semiconductor circuit board 100 with which the semiconductor chip 30 and the circuit board 40 were adhere | attached by the adhesive bond layer 6 after hardening can be obtained by hardening the adhesive bond layer 6 as needed. In the semiconductor circuit board 100, the terminal 24 and the terminal 44 are joined to electrically connect the semiconductor chip 30 and the circuit board 40, and the semiconductor chip 30 and the circuit board 40 are cured after being cured. The adhesive layer 6 is sealed. In the semiconductor circuit element 100, the distance between the substrate 42 of the semiconductor part 22 and the circuit board 40 of the semiconductor chip 30 is represented by _{t 1.}

In such a manufacturing method of the semiconductor circuit member 100, the height tc (FIG. 1B) of the terminal 24 (first terminal) in the semiconductor chip 30 and the height of the terminal 44 (second terminal) in the circuit board 40 are shown. ts (FIG. 1F), a distance t ₁ between the semiconductor portion 22 (first substrate) of the semiconductor chip 30 and the substrate 42 (second substrate) of the circuit substrate 40 in the semiconductor circuit member 100 (FIG. 1F). )), And the thickness t2 (FIG. 1 (a)) of the adhesive layer 6 (adhesive for connecting circuit members) before bonding is expressed by Equation (1); t ₁ ≦ (tc + ts) and Equation (2); The condition shown by (tc + ts) ≦ t ₂ is satisfied. Here, the “height” of the terminal 24 and the terminal 44 means the height of the terminal portion excluding the bonding material when solder or the like is previously provided as a bonding material. . That is, the “height” of the terminal 24 and the terminal 44 refers to the height of the portion that does not melt at the mounting temperature.

  First, by satisfying the condition of the formula (1), when the terminal 24 and the terminal 44 are in reliable contact and a metal joint is formed by solder, the solder is sandwiched between the terminal 24 and the terminal 44 and crushed. As a result, the oxide film on the solder surface is removed, so that a metal bond is well formed.

In addition, when filling the gap between the semiconductor portion 22 and the substrate 42 with a circuit member connecting adhesive without a gap, it is required that (tc + ts) = t2. On the other hand, in the present invention, by satisfying the formula (2); (tc + ts) ≦ t ₂ , more preferably (tc + ts) <t ₂ , the void of the adhesive layer 6 can be surely eliminated. In addition, it is possible to reliably bury the step.

Further, t ₂ preferably satisfies the relationship represented by (tc + ts) ≦ t ₂ ≦ (tc + ts) × 1.5, and is represented by (tc + ts) ≦ t ₂ ≦ (tc + ts) × 1.2. It is more preferable to satisfy the relationship, and it is more preferable to satisfy the relationship represented by (tc + ts) ≦ t ₂ ≦ (tc + ts) × 1.1.

If t ₂ is greater than (tc + ts) × 1.5, it is difficult to completely remove the resin between the terminals 22 and the terminal 24, conduction between them may not be obtained. Also, t ₂ is, (tc + ts) when × greater than 1.2, although it is possible to excellently fill while providing adequate conduction, becomes large amount of circuitry member connecting adhesive protrude at the time of bonding For this reason, the adhesive may enter the connecting device or the like from the side surface, and the device or the like needs to be cleaned, resulting in poor yield. In addition, when the fluidity of the circuit member connecting adhesive is extremely poor, it may be difficult to obtain conduction. In this case, it is possible to remove the adhesive strongly by increasing the pressure at the time of connection and to obtain conduction, but in recent years, a fragile low-k film has been applied to the semiconductor insulating layer. In many cases, it is not desirable to apply such a high load because it is required to reduce the connection load.

On the other hand, when t ₂ is less than (tc + ts), a gap between the semiconductor part 22 and the substrate 42 remains a gap will not be sufficiently filled with adhesive for circuit member connection, moisture or the like intrudes into the gap Tend to adversely affect connection reliability.

  As mentioned above, although preferred embodiment of the manufacturing method of the semiconductor circuit member 100 was demonstrated, below, the structure of the adhesive film laminated body 10 used for this method and the example of a manufacturing method are demonstrated in detail.

  First, as the base material 2 in the adhesive film laminate 10, a plastic film or the like having heat resistance and low thermal expansion can be suitably used. For example, a polyester film such as a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, and the like can be given. Among them, a polyester film that can be obtained industrially at low cost, particularly a film made of polyethylene terephthalate is preferable. These plastic films may have a multilayer structure.

  The thickness of the base material 2 is preferably in a range that does not deteriorate the workability when bonding is performed using the adhesive film laminate 10. In particular, the thickness of the base material 2 is preferably 100 μm or less, preferably 5 to 50 μm from the viewpoint of sufficiently reducing the adhesiveness so as to be favorable when peeled off from the semiconductor wafer in use as described later. More preferably.

  Moreover, as the base material 2, it is preferable to apply the annealed film which removed the thermal distortion at the time of film processing at the temperature more than the glass transition temperature (Tg). By using the base material 2 made of such a film, even when a thin semiconductor wafer is used, it is possible to further suppress the occurrence of warpage in the wafer.

  Furthermore, from the viewpoint of improving the adhesion between the substrate 2 and the pressure-sensitive adhesive layer 4, the surface of the pressure-sensitive adhesive layer 2 is a predetermined surface treatment such as chromic acid treatment, ozone exposure, flame exposure, It may have been subjected to chemical or physical treatment such as high piezoelectric exposure or ionizing radiation treatment.

  The pressure-sensitive adhesive layer 4 is preferably a layer made of a material such as a resin that has adhesive strength at room temperature and has a necessary adhesion to the adherend. Examples of such materials include acrylic resins, various synthetic rubbers, natural rubber, polyimide resins, and the like. The pressure-sensitive adhesive layer 4 is preferably cured by high energy rays such as ultraviolet rays or radiation or heat, and the adhesive strength is reduced.

  The thickness of the pressure-sensitive adhesive layer 4 is preferably 5 to 50 μm, more preferably 5 to 25 μm, and still more preferably 5 to 15 μm. When the thickness of the pressure-sensitive adhesive layer is in such a suitable range, it becomes possible to suppress the occurrence of unevenness and uneven coating on the surface of the pressure-sensitive adhesive layer 4.

  The adhesive layer 6 is a layer made of an adhesive for connecting circuit members. The adhesive layer 6 in the adhesive film laminate 10 is in a state where the circuit member adhesive is not completely cured, and for example, a temperature higher than the curing reaction start temperature measured by DSC is applied. It is preferable that it is an uncured state.

The thickness _{t 2} of the adhesive layer 6 is set to satisfy the relationship of the above-mentioned formula (1) and (2), the _{t 2} is preferable to be 5 to 200 [mu] m, is 7~150μm And more preferably 10 to 100 μm. If the thickness t ₂ of the adhesive layer 6 is thinner than 5 [mu] m, sufficient addition is to ensure the adhesion becomes difficult, the gap between the semiconductor wafer and the circuit board can not be filled the electrode protruding to the surface in the circuit board May not be sufficiently filled. On the other hand, even if it is thicker than 200 μm, there is no advantage in characteristics, and it is not possible to meet the demand for downsizing of the semiconductor device, and there is a risk of increasing the cost.

  The adhesive layer 6 preferably has a visible light transmittance of 5% or more, more preferably 8% or more, and still more preferably 10% or more. When the visible light transmittance is less than 5%, when flip chip mounting is performed, for example, it is difficult to recognize terminals and the like by a flip chip bonder, and it is difficult to perform alignment work during bonding. From this point of view, the higher the visible light transmittance, the better, and the upper limit is not particularly limited. The visible light transmittance of the adhesive layer 6 can be adjusted by the composition of the adhesive for connecting circuit members constituting this layer.

  The visible light transmittance of the adhesive layer 6 can be measured using a spectrophotometer (for example, U-3310 manufactured by Hitachi, Ltd.). Specifically, for example, after performing baseline correction measurement using a PET film having a film thickness of 50 μm (Purex made by Teijin DuPont, transmittance of 555 nm: 86.03%) as a reference material, a circuit with a thickness of 25 μm is applied to this PET film. A value obtained by applying an adhesive for connection to form an adhesive layer and measuring the transmittance of this layer in the visible light region of 400 nm to 800 nm can be applied. The relative wavelength intensity of the halogen light source and light guide used in the flip chip bonder is strongest at 550 nm to 600 nm, and therefore it is preferable to set the visible light transmittance with a transmittance of 555 nm.

  As the adhesive for connecting circuit members constituting the adhesive layer 6, an adhesive containing an adhesive composition containing a high molecular weight component, a thermosetting resin and a thermosetting resin curing agent is suitable.

  The high molecular weight component in the adhesive composition is a component that mainly imparts film formability to the adhesive for connecting circuit members, and is a component composed of a compound different from the thermosetting resin described later. As used herein, the polymer component is a polymer compound having a side chain branched from a straight chain or a straight chain obtained by polymerizing a single monomer or a plurality of monomers, and includes general thermoplastic resins, elastomers, rubbers, and the like. Including. These polymer components may contain a reactive functional group in the main chain, at the end of the main chain or in the side chain. The molecular weight of the high molecular weight component is not particularly limited as long as film forming properties can be imparted to the circuit member connecting adhesive, but for example, a molecular weight of about 20,000 to 1,000,000 in terms of polystyrene measured by GPC is preferable. . When the molecular weight is 1,000,000 or more, the solubility is lowered, and it tends to be difficult to adjust the adhesive composition by dissolving it in a solvent. On the other hand, if the molecular weight is 20,000 or less, the film formability becomes poor, and thus it tends to be difficult to obtain a film-like molded product after mixing with other components.

  Such high molecular weight components include polyester resins, polyether resins, polyamide resins, polyamideimide resins, polyimide resins, polyacrylate resins, polyvinyl butyral resins, polyvinyl formal resins, polyurethane resins, phenoxy resins, phenol resins, epoxy resins, Examples thereof include polyhydroxy polyether resin, polyacrylate resin, polybutadiene, acrylonitrile butadiene copolymer, acrylonitrile butadiene rubber styrene resin, styrene butadiene copolymer, and acrylic acid copolymer. These can be used alone or in combination of two or more. Among these, a polyimide resin or a phenoxy resin is preferable from the viewpoint of obtaining good heat resistance and film formability.

  In addition, the high molecular weight component has a film-forming property, and has a glass transition temperature (Tg) of 20 ° C. to 120 ° C. in order to impart excellent adhesiveness to the adhesive for connecting circuit members when uncured. It is preferable that When Tg is lower than 20 ° C., the film formability at room temperature is lowered, and for example, deformation of the adhesive for connecting circuit members is likely to occur during the processing of a semiconductor wafer. It may be difficult to divide into individual pieces in the dicing process. On the other hand, when the glass transition temperature is higher than 100 ° C., the application temperature when the adhesive for connecting circuit members to the semiconductor wafer is higher than 100 ° C., thereby curing the thermosetting resin described later at the time of application. Since the reaction proceeds and the fluidity is lowered when the semiconductor chip is connected to the circuit board, there is a risk of causing a connection failure.

  Thermosetting resins include epoxy resin, bismaleimide resin, triazine resin, polyimide resin, polyamide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea resin, polyurethane resin, polyisocyanate resin, furan resin. Resorcinol resin, xylene resin, benzoguanamine resin, diallyl phthalate resin, silicone resin, polyvinyl butyral resin, siloxane-modified epoxy resin, siloxane-modified polyamideimide resin, and acrylate resin. These can be used alone or as a mixture of two or more. From the viewpoint of obtaining the advantageous effects of the present invention, an epoxy resin is preferable as the thermosetting resin.

  The curing agent for the thermosetting resin is preferably a latent curing agent that initiates curing by heating. For example, phenol type, imidazole type, hydrazide type, thiol type, benzoxazine, boron trifluoride-amine complex, sulfonium salt, amine imide, polyamine salt, dicyandiamide, and organic peroxide type curing agent are preferable. Further, from the viewpoint of extending the pot life, a microcapsule type curing agent obtained by coating these curing agents with a polyurethane-based or polyester-based polymer substance to form a microcapsule is also preferable. As a microcapsule type curing agent, a curing agent is used as a core, and this core is a polymer material such as polyurethane, polystyrene, gelatin, or polyisocyanate, an inorganic material such as calcium silicate or zeolite, or a metal thin film such as nickel or copper. The thing substantially covered with the film is illustrated. The microcapsule type curing agent preferably has an average particle size of 10 μm or less, and more preferably 5 μm or less.

  The adhesive for connecting circuit members may contain other components in addition to the adhesive composition depending on the required properties. For example, first, the circuit member connecting adhesive preferably includes a filler. By adding the filler, the moisture absorption rate, the low linear expansion coefficient, and the high elasticity of the adhesive layer 6 can be increased, and the long-term connection reliability of the semiconductor package can be improved.

  When a filler is included, as described above, the adhesive layer 6 preferably has a visible light transmittance of a certain level (more than 5%), and therefore the filler is selected so as to obtain a good visible light transmittance. It is desirable. As a method of not reducing the visible light transmittance while highly filling the filler, a method of blending a filler having a particle diameter finer than the wavelength of visible light, or a filler having a refractive index approximate to the resin to be blended, There is a method for preventing the visible light from being scattered and suppressing a decrease in transmittance.

  In the case of the former method of blending a fine particle size filler, the filler preferably has a particle size of less than 0.3 μm, more preferably 0.1 μm or less. Moreover, as a filler, the filler which has transparency is preferable, for example, it is suitable to use the filler of refractive index 1.46-1.7. The refractive index of the filler can be measured using an Abbe refractometer and using sodium D line (589 nm) as a light source.

  On the other hand, in the case of a method of blending a filler having a refractive index close to that of the latter resin, a suitable filler refractive index is prepared by, for example, preparing an adhesive for connecting a circuit member (adhesive composition) without blending a filler, The refractive index may be measured to obtain a refractive index close to this. In the case of this method, there is no particular limitation on the particle size of the filler, but the viewpoint of filling the gap between the semiconductor chip and the circuit board to which the adhesive for connecting the circuit member is applied, and the generation of voids in the connection process From the viewpoint of suppressing the above, it is preferable to use a fine filler.

  The range of the particle diameter of the filler is preferably from 0.01 μm to 5 μm, more preferably from 0.1 μm to 2 μm, and still more preferably from 0.3 μm to 1 μm. When the particle diameter of the filler is finer than 0.01 μm, the surface area of the particles is increased, so that the viscosity of the circuit member connecting adhesive is remarkably increased, and it is difficult to highly fill the filler. If the filler cannot be highly filled, the circuit member connecting adhesive cannot have a low linear expansion coefficient and high elasticity, and it tends to be difficult to obtain high reliability.

  The refractive index of the filler having a refractive index close to that of the resin is preferably in the range of ± 0.06 of the refractive index of the circuit member connecting adhesive excluding the filler (for example, an adhesive composition). As such a filler, a composite oxide filler, a composite hydroxide filler, barium sulfate, a viscosity mineral, or the like can be applied. More specifically, for example, when the refractive index of the composition excluding the filler of the circuit member connecting adhesive is 1.60, it is preferable to use a filler having a refractive index of 1.54 to 1.66. Specific examples thereof include cordierite, forslite, mullite, barium sulfate, magnesium hydroxide, aluminum borate, barium, silica titania and the like.

  In addition, you may carry out combining the method of mix | blending the filler of a fine particle diameter, and the method of mix | blending the filler which has a refractive index close | similar to resin. However, even in this case, in order to suppress an increase in the viscosity of the adhesive for connecting circuit members, the addition amount of the filler having a fine particle diameter is a concentration lower than 10% by mass of the composition of the adhesive for connecting circuit members. It is preferable to do so.

The linear expansion coefficient of the filler is preferably 7 × 10 ⁻⁶ / ° C. or lower and more preferably 3 × 10 ⁻⁶ / ° C. or lower in the temperature range of 0 ° C. or higher and 700 ° C. or lower. When the linear expansion coefficient of the filler is within such a range, the linear expansion of the adhesive for connecting circuit members can be reduced satisfactorily, and high connection reliability can be obtained in the heat resistance test.

  In the adhesive for connecting circuit members, the blending amount of the filler is preferably 25 to 200 parts by mass, more preferably 50 to 150 parts by mass, and 75 to 125 parts by mass with respect to 100 parts by mass of the adhesive composition. Part is more preferable. When the blending amount of the filler is smaller than 25 parts by mass, the linear expansion coefficient of the adhesive for connecting circuit members increases and the elastic modulus decreases, so that the connection reliability between the semiconductor chip after crimping and the circuit board is increased. May decrease. Moreover, it may be difficult to suppress the generation of voids during connection. On the other hand, when the amount is more than 200 parts by mass, the melt viscosity of the circuit member connecting adhesive increases, and the wettability of the interface between the semiconductor chip and the adhesive layer 6 or the interface between the adhesive layer 6 and the circuit board decreases. However, these peelings and insufficient embedding may occur, and it may be difficult to remove voids.

  In addition to the filler, the circuit member connecting adhesive may contain a powder composed of high molecular weight fine particles having a crosslinked structure, in addition to the filler. Examples of the constituent material of such high molecular weight fine particles include acrylic resin, silicone resin, butadiene, polyester, polyurethane, polyvinyl butyral, polyarylate, polymethyl methacrylate, acrylic rubber, polystyrene, NBR, SBR, and silicone-modified resin. A copolymer containing as a component can be applied. The fine particles may have a core-shell structure, and the core portion and the shell portion may have different compositions.

  Since the high molecular weight fine particles having a cross-linked structure have a cross-linked structure, they are blended in the adhesive for connecting circuit members without dissolving in an organic solvent at the time of blending. If the high molecular weight fine particles do not have a cross-linked structure, they will dissolve in the solvent, making it difficult to disperse in an island shape in the adhesive for connecting circuit members after molding, for example, and reducing the strength of the cured product of this adhesive There is a risk of causing it.

  The high molecular weight fine particles having a crosslinked structure preferably have a particle size of 0.1 μm to 2 μm. When the particle diameter is smaller than 0.1 μm, the melt viscosity of the circuit member connecting adhesive increases, which may reduce the wettability during connection. On the other hand, when the particle diameter is larger than 2 μm, the effect of reducing the viscosity of the adhesive for connecting circuit members is reduced, and it may be difficult to suppress voids during connection.

  The amount of the high molecular weight fine particles having a crosslinked structure is the circuit excluding the filler and the high molecular weight fine particles described above from the viewpoint of suppressing voids at the time of connection by the adhesive layer 6 and obtaining a good stress relaxation effect after connection. It is preferable that it is 5-20 mass parts when the adhesive agent for member connection (for example, adhesive composition) is 100 mass parts. When the amount of the high molecular weight fine particles is less than 5 parts by mass, it is difficult to suppress voids at the time of connection and the stress relaxation effect may not be sufficiently exhibited. On the other hand, when the amount is more than 20 parts by mass, the fluidity of the adhesive for connecting circuit members is lowered, so that wettability is reduced, causing residual voids, and the elastic modulus of the cured product is too low, resulting in connection reliability. There is a risk of lowering the sex.

  In addition, the adhesive for connecting circuit members contains a powdery compound that has a melting point lower than that of solder and is solid at room temperature in order to improve wettability with solder on terminals on a semiconductor chip or circuit board. It is preferable. Such a powdery compound melts when forming a metal bond with solder, and this can remove the oxide film on the surface, etc., thus improving the wettability of the solder and improving the metal bond between terminals. Allows to form.

  Such a powdery compound is not particularly limited as long as it has a melting point lower than that of solder and can remove the oxide film on the surface in terms of solubility, for example, a compound having a carboxyl group, a compound having a methylol group, Examples include at least one compound among hydrazide compounds.

  These powdery compounds preferably have a maximum particle size of 20 μm or less so as not to hinder the film-forming property of the adhesive for connecting circuit members. Specifically, for example, 2,2-bis (hydroxymethyl) propionic acid, 2,6-dimethoxymethylparacresol, adipic acid dihydrazide and the like can be applied as the powdery compound. These compounds are ground in a mortar and pulverized, and then a large powder is removed by a 10 μm filter to obtain a good powdery compound.

  The compounding amount of the powdery compound in the adhesive for connecting circuit members is preferably 1 to 20 parts by mass when the total amount of the adhesive for connecting circuit members is 100. If the amount is less than 1 part by weight, the effect of improving the wettability of the solder may not be obtained sufficiently. On the other hand, there is no problem even if it is more than 20 parts by weight, but it becomes an excess component and tends to hardly contribute to improvement of characteristics.

  The adhesive for connecting circuit members further includes, for example, silane-based, titanium-based, aluminum-based silicone oil, polysiloxane, etc. for the purpose of increasing the adhesive strength by the circuit member adhesive layer 6 and modifying the surface of the filler. , Silicone oligomers, and coupling agents may be included.

  For example, silane coupling agents include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, and 3-aminopropylmethyl. Diethoxysilane, 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane and the like can be applied. These can be used alone or in combination of two or more.

  Moreover, in order to adsorb | suck an ionic impurity and to improve the insulation reliability at the time of moisture absorption, an ion trapping agent can also be added to the adhesive for circuit member connection. Examples of the ion scavenger include triazine thiol compounds and bisphenol reducing agents, such as compounds known as copper damage inhibitors to prevent copper ionization and dissolution, zirconium-based, antimony bismuth-based magnesium aluminum compounds Inorganic ion adsorbents such as

The adhesive for connecting a circuit member is a material that has been cured from the viewpoint of achieving high connection reliability by suppressing temperature change after expansion of the semiconductor chip and the circuit board by the adhesive layer 6 and expansion due to heat absorption. The linear expansion coefficient at 40 to 100 ° C. is preferably 60 × 10 ⁻⁶ / ° C. or less, more preferably 55 × 10 ⁻⁶ / ° C. or less, and 50 × 10 ⁻⁶ / ° C. or less. Further preferred. If the linear expansion coefficient after curing exceeds 60 × 10 ⁻⁶ / ° C., expansion due to temperature change after mounting and heat absorption is likely to occur, and electrical connection between the terminals of the semiconductor chip and the wiring of the circuit board is likely to occur. It may not be held well.

  Moreover, it is preferable that the fluidity | liquidity in the crimping | compression-bonding temperature when the adhesive for circuit member connection is measured by a disk flow is 1.1-2.5. When the fluidity of the adhesive for connecting circuit members is smaller than 1.1, the adhesive is not sufficiently removed when crimping for connection, and remains, for example, between the terminals 22 and 44. The electrical connection between them may not be obtained, which may cause a manufacturing failure. On the other hand, when the fluidity of the adhesive for connecting circuit members is greater than 2.5, the viscosity of the adhesive during heating and pressurization is too low, and it becomes difficult to sufficiently suppress foaming. May remain and become a factor of lowering reliability.

  The fluidity when measured by the disk flow of the circuit member connection adhesive is, for example, that the circuit member connection adhesive is sandwiched between flat members and pressed at a predetermined temperature and load, and the adhesive after pressing. Is compared with the area of the adhesive before flowing. That is, when the initial area is a and the area after pressing is b, the fluidity of the resin can be calculated as b / a. Examples of the flat member include glass and silicon chip.

  Further, the adhesive for connecting circuit members has a reaction rate measured by DSC of 60% or more after heating at 250 ° C. for 10 seconds, and is measured by DSC after being left at room temperature for 14 days. It is preferable that the reaction rate is lower than 10%. According to the adhesive layer 6 made of such an adhesive for connecting circuit members, the semiconductor chip 30 and the circuit board 40 can be quickly bonded by heating. On the other hand, for example, the adhesive layer 6 is applied to the semiconductor chip 30. Even when stored for a long period of time, the adhesive layer 6 is sufficiently maintained in adhesion, which is extremely advantageous for use in a first-stage sealing.

  The adhesive film laminated body 10 which has the structure mentioned above can be obtained as follows, for example.

  That is, the adhesive film laminated body 10 prepares the laminated body which formed the adhesive bond layer 6 on the predetermined | prescribed plastic film, and the laminated body which formed the adhesive layer 4 on the base material 2, respectively, These are adhesives After laminating the layer 6 and the pressure-sensitive adhesive layer 4 so as to face each other, the predetermined plastic film can be peeled off.

  As a method of forming the adhesive layer 6 on a predetermined plastic film, the above-mentioned adhesive for circuit member connection dissolved or dispersed in a solvent or the like is applied onto the plastic film and then dried. A method is mentioned. The varnish can be applied by, for example, knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, or the like.

  Examples of the predetermined plastic film for forming the adhesive layer 6 include plastic films such as polyethylene terephthalate, polytetrafluoroethylene film, polyethylene film, polypropylene film, and polymethylpentene film. More specifically, for example, A-63 (mold release treatment agent: modified silicone type) manufactured by Teijin Ltd., A-31 (mold release treatment agent: Pt silicone series) manufactured by Teijin Ltd., etc. Is mentioned.

  In order to facilitate the peeling of the plastic film during the production of the adhesive film laminate 10, the surface on the adhesive layer 6 side may be treated with a release agent. Examples of the release agent include silicone release agents, fluorine release agents, and long chain alkyl acrylate release agents. Moreover, as a plastic film, it is also preferable to use a film having a low surface energy, such as a film made of a fluororesin.

  The thickness of the plastic film can be appropriately selected as long as the workability is not impaired. For example, 100 micrometers or less are preferable, it is more preferable in it being 10-75 micrometers, and it is still more preferable in it being 25-50 micrometers.

  Moreover, an organic solvent is mentioned as a solvent for preparing a varnish, It is preferable to select in consideration of volatility. For example, a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene is preferable. By using these low-boiling solvents, it is possible to dry at a low temperature when the adhesive layer 6 is formed, and it is possible to prevent the adhesive for connecting circuit members from being cured. As the solvent, one kind may be used alone, or two or more kinds may be used in combination.

  On the other hand, as a method of forming the pressure-sensitive adhesive layer 4 on the substrate 2, a varnish in which a material (pressure-sensitive adhesive composition) for forming the pressure-sensitive adhesive layer 6 is dissolved or dispersed in a solvent or the like is prepared, The method of drying after apply | coating on the base material 2 is mentioned. The solvent used for the varnish and the method for applying the varnish can be the same as those used for forming the adhesive layer 6.

  Bonding of the laminate in which the adhesive layer 6 is formed on the plastic film and the laminate in which the adhesive layer 4 is formed on the substrate 2 is performed by, for example, combining the adhesive layer 6 and the adhesive layer 4 with each other. Can be carried out by placing them so as to face each other and superposing them at room temperature to about 60 ° C. At this time, pressurization in the stacking direction may be performed with an appropriate pressure.

  As described above, in the method of manufacturing the semiconductor circuit member 100 according to the embodiment described above, the adhesive film laminate 10 is attached in the state of the semiconductor wafer 20, the semiconductor wafer 20 is processed to form the semiconductor chip 30, and then attached in advance. Since the adhesive layer 6 in the adhesive film laminate 10 is adhered to the circuit board 40, the adhesive layer 6 functions as a pre-type sealing resin.

Conventionally, if the gap between the connection part of the semiconductor chip and the circuit board is narrowed and the pitch between the terminals is made fine in order to reduce the size of the semiconductor package, etc., filling of the sealing resin at the time of connection becomes insufficient. The void generated in the connection portion tends to decrease the reliability. In contrast, in the present embodiment, as described above, tc, ts, for t ₁ and t _2, because you have satisfy the condition of Equation (1) and (2), the terminals of favorably adhered In addition, even when using solder, the terminals can be connected well while removing the oxide film on the solder surface. In addition, since the gap between the semiconductor portion 22 and the substrate 42 can be satisfactorily filled with the adhesive for connecting circuit members, generation of voids during and after mounting is suppressed. As a result, the semiconductor circuit member 100 with high reliability at the connection portion between the semiconductor chip 30 and the circuit board 40 is obtained.

  Further, conventionally, as the gap of the connection portion is narrowed, the stress applied to this portion increases, and this also tends to cause a decrease in the reliability of the connection portion. According to the adhesive layer 6 using the member connecting adhesive, it becomes easy to perform mounting while suppressing the generation of stress at the connecting portion.

  The preferred embodiments of the present invention have been described above, but the present invention is not necessarily limited to the above-described embodiments, and can be changed as appropriate without departing from the spirit of the present invention.

  For example, in the above-described embodiment, the method of mounting the semiconductor chip on the circuit board has been described. However, as long as the conditions of the present invention are satisfied, the present invention is not limited to such a form. For example, a method for connecting semiconductor chips to each other It can also be applied to. Moreover, it is not always necessary to use the adhesive film laminate 10. For example, an adhesive layer may be directly formed on a semiconductor wafer (semiconductor chip) to perform connection.

  Furthermore, in the description of the mounting method using the adhesive film laminate described above, after the adhesive film laminate is attached to the semiconductor wafer, the semiconductor wafer is processed to form a semiconductor chip. A semiconductor chip may be used from the beginning.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not necessarily limited to these Examples.

[Formation of adhesive layer for connecting circuit members]
(Preparation Example 1)
25 parts by weight of phenoxy resin (manufactured by Toto Kasei Co., Ltd .: trade name ZX1356-2), 20 parts by weight of epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., trade name 1032H60), liquid epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., product) 15 parts by weight of No. Epicoat 828) and 40 parts by weight of a microcapsule type latent curing agent (manufactured by Asahi Kasei Electronics Co., Ltd .: trade name HX3941HP) were prepared and dissolved in a mixed solvent of toluene and ethyl acetate.

Next, an average of 10 parts by weight of a core-shell type impact modifier (trade name SRK-200, manufactured by Mitsubishi Rayon Co., Ltd.) and 5 μm classification treatment was performed on the obtained solution to remove large particles. 75 parts by weight of cordierite particles (2MgO · 2Al ₂ O ₃ · 5SiO ₂ , specific gravity 2.4, linear expansion coefficient 1.5 × 10 ⁻⁶ / ° C., refractive index 1.57) with a particle size of 1 μm, large particle size In order to remove water, 10 parts by weight of adipic acid dihydrazide (ADH, manufactured by Otsuka Chemical Co., Ltd.) that had been subjected to a classification treatment of 10 μm was dispersed to obtain a coating solution.

Then, after apply | coating this coating liquid on a plastic film (PET film) using a roll coater, it was dried in 70 degreeC oven for 5 minutes, and the adhesive bond layer which consists of an adhesive for circuit member connection on PET film A laminate including (thickness t ₂ : 55 μm) was formed.

(Preparation Examples 2 to 5)
Except that the thickness t ₂ of the adhesive layer is set to be as described in Table 1, in the same manner as in Preparation Example 1 to form a laminate of Preparation 2-5.

(Preparation Examples 6 to 10)
For using 100 parts by weight of cordierite particles, and, except that as the thickness t ₂ of the adhesive layer as described in Table 1, in the same manner as in Preparation Example 1, the laminate of Preparation 6-10 Formed.

(Preparation Examples 11-14)
Cordierite that the particles using 150 parts by weight of, and, except that as the thickness t ₂ of the adhesive layer as described in Table 1, in the same manner as in Example 1, the laminate of Preparation 11 to 14 Formed.

(Comparative Preparation Example 1)
The thickness t ₂ of the adhesive layer, except that was formed so as to be 40 [mu] m, in the same manner as in Preparation Example 1 to form a laminate of Comparative Preparation Example 2.

(Comparative Preparation Example 2)
The thickness t ₂ of the adhesive layer, except that was formed so as to be 25 [mu] m, in the same manner as in Preparation Example 1 to form a laminate of Comparative Preparation Example 6.

[Fabrication of semiconductor circuit members]
Examples 1 to 14 and Examples 1 to 14 and Comparative Examples 1 to 2 and Comparative Preparation Examples 1 and 2 each including a laminate including an adhesive layer made of an adhesive for connecting circuit members on PET were used according to the following methods. The semiconductor circuit members of Comparative Examples 1 and 2 were manufactured.

(Formation of a laminate having a substrate and an adhesive layer)
As a material for forming the pressure-sensitive adhesive layer, the following pressure-sensitive adhesive solution was prepared. First, 2-ethylhexyl acrylate and methyl methacrylate are mainly used as monomers for forming a skeleton, and hydroxyethyl acrylate and acrylic acid are used as monomers for introducing functional groups into side chains, and these are polymerized by a solution polymerization method. An acrylic copolymer was obtained. The weight average molecular weight of this acrylic copolymer was 400,000, and the glass transition temperature was -38 ° C. Next, 10 parts by weight of a polyfunctional isocyanate cross-linking agent (manufactured by Nippon Polyurethane Industry Co., Ltd., Colonate HL) was blended with 100 parts by weight of the obtained acrylic copolymer to obtain an adhesive solution.

  This pressure-sensitive adhesive solution was applied on a polyethylene film (thickness: 100 μm) subjected to annealing treatment as a base material so that the thickness of the pressure-sensitive adhesive layer obtained after drying was 10 μm, dried, and then adhered. An agent layer was formed. Further, a biaxially stretched polyester film separator (thickness 25 μm) coated with a silicone release agent was laminated on the pressure-sensitive adhesive layer. Thus, after obtaining the laminated body which has the polyethylene film which is a base material, an adhesive layer, and a polyester film separator in this order, this was left to stand at room temperature for one week and fully aged.

(Production of adhesive film laminate for semiconductor processing)
The laminated body in which the adhesive layer which consists of an adhesive for circuit member connection was formed on PET film, and the laminated body which has a base material and an adhesive layer were bonded together, and the adhesive film laminated body for semiconductor processing was manufactured. Bonding was performed such that the pressure-sensitive adhesive layer and the adhesive layer in both laminates face each other.

(Production of semiconductor circuit members)
<Adhesion of adhesive film laminate for semiconductor processing to semiconductor wafer>
First, after heating the adsorption stage of a die attach film mounter manufactured by JCM Co., Ltd. to 80 ° C., a gold plating bump (semiconductor chip terminal, height tc: 25 μm) is formed on the adsorption stage. A semiconductor wafer having a diameter of 6 inches was mounted with the bump side facing upward.

  Next, after cutting the semiconductor processing adhesive film obtained above into 200 mm × 200 mm, the semiconductor processing adhesive film is directed so that the adhesive layer faces the bump side of the semiconductor wafer, and air is not caught, It pressed and laminated | stacked from the edge part of the semiconductor wafer using the sticking roller of the die attach mounter. After lamination, the protruding portion of the semiconductor processing adhesive film was cut along the outer shape of the wafer.

<Back grinding of semiconductor wafers and peeling of substrate and adhesive layer>
The wafer portion of the semiconductor wafer to which the above-described adhesive film for semiconductor processing was attached was back-ground to 150 μm using a disco back-grinding apparatus. Then, the semiconductor wafer after back grinding was placed on a die attach film mounter manufactured by JC with the semiconductor processing adhesive film laminate side facing the suction stage side. Then, ADEKA dicing tape AD80H was attached to the ground surface of the semiconductor wafer together with the dicing frame at room temperature.

  After that, Nitto Denko's back grind tape peeling tape is applied to the base material of the semiconductor processing adhesive film laminate attached to the semiconductor wafer, and then peeled off 180 ° C. from the edge to laminate the semiconductor processing adhesive film. It peeled between the adhesive layer and adhesive layer in a body, and the base material and the adhesive layer were removed.

<Dicing>
The semiconductor wafer with the adhesive layer fixed to the dicing frame as described above is diced to 10 mm × 10 mm using a full automatic dicing saw DFD6361 manufactured by DISCO Corporation, further washed, blown off moisture, and then dicing tape. UV irradiation was performed from the side. Then, the semiconductor chip with an adhesive layer separated by dicing was picked up.

<Connection between semiconductor chip and circuit board>
The semiconductor chip with the adhesive layer obtained above is a circuit in which a solder containing SnAgCu as a constituent component is formed on a copper + nickel + gold terminal (terminal on a circuit board, height ts: 12 μm) at a height of 12 μm. After aligning the circuit board (glass epoxy substrate) having a flip-chip bonder FCB3 manufactured by Matsushita Electric Industrial Co., Ltd. so that the gold-plated bumps on the semiconductor chip and the terminals on the circuit board face each other, A semiconductor circuit board was obtained by thermocompression bonding at 0.5 MPa. In thermocompression bonding, the distance t1 between the portions of the semiconductor circuit board excluding the terminals of the semiconductor chip and the circuit board was set to the values shown in Tables 1-4.

[Characteristic evaluation]
Various characteristics evaluation was performed as follows about manufacture of the semiconductor circuit board performed by Examples 1-14 mentioned above and Comparative Examples 1-2, and the semiconductor circuit board obtained by this. The obtained results are shown in Tables 1 to 4 together with t ₁ , t ₂ , tc, ts and the values obtained by these in the manufacture of the semiconductor circuit board described above.

(Confirmation of filling with adhesive for connecting circuit members and measurement of connection resistance)
First, the filling state of the adhesive (adhesive layer) for connecting a circuit member between the semiconductor chip and the circuit board was confirmed using a Hitachi Construction Machinery ultrasonic flaw detector (SAT). In the table, when no continuous void was observed, there was no void due to foaming of the resin, but a void derived from entrainment of air when mounting the chip was partially observed, The case where continuous voids were confirmed was indicated as x.

  In addition, for a semiconductor circuit board, the connection resistance value between the gold plating bumps of the semiconductor chip and the terminals of the circuit board is measured using a digital multimeter manufactured by Advantest, and the conduction between them (hereinafter referred to as “crimping”). It was evaluated for the presence or absence of “later conduction”. In Table 1, the continuity is evaluated as ◯ when continuity is obtained at all locations among all the connection locations (in this embodiment, 176 locations) between the gold plating bumps and the terminals. In the case where no continuity was obtained, Δ was given, and in the case where no continuity was obtained in all locations, x was given.

  Thereafter, the semiconductor circuit board was left to stand for 168 hours in a high-temperature and high-humidity machine at 85 ° C. and 60% RH, and then exposed to a reflow furnace set at 260 ° C. three times. The semiconductor circuit board was observed by SAT in the same manner as described above, and it was confirmed whether or not peeling occurred between the adhesive layer and the semiconductor chip or the circuit board. In the table, the case where this “peeling after reflow” did not occur was indicated as “◯”, and the case where peeling occurred was indicated as “X”. Further, the semiconductor circuit board was evaluated for the presence or absence of conduction between the gold plating bump and the terminal (hereinafter referred to as “conduction after reflow”) in the same manner as described above.

  Further, the semiconductor circuit board after the above exposure is put into a temperature cycle test in which a treatment at −55 ° C. for 30 minutes and 125 ° C. for 30 minutes is set as one cycle, and between the semiconductor chip and the circuit board. The number of cycles until no continuity was obtained was evaluated. In addition, when conduction | electrical_connection was acquired even if it exceeded 1000 cycles, it showed as 1000 cycles or more in the table | surface, and the test beyond it was not performed.

(Disc flow measurement)
Except that the thickness of the adhesive layer was 25 μm, the adhesive for circuit member connection on the PET film used in each Example and Comparative Example under the same conditions as the corresponding Preparation Examples or Comparative Preparation Examples. The laminated body provided with the adhesive bond layer which consists of was formed. The obtained laminate was cut out to a size of 5 mm × 5 mm, and then transferred to # 1737 glass cut to a thickness of 0.5 mm and a size of 15 mm × 15 mm so that the adhesive layer side was in contact, and then a PET film Was peeled off, leaving only the adhesive layer on the glass chip.

  A silicon chip (surface mirror treatment) having a thickness of 550 μm cut into 12 mm × 12 mm was placed on the adhesive layer on the glass chip, and the adhesive layer was sandwiched between the glass and the silicon chip. The area (initial area) of the adhesive layer in this state was read by an image processing apparatus. Subsequently, the temperature reaches 180 ° C. after 20 seconds, and a thermocompression bonding machine with a heating tool set temperature of 197 ° C. is used. Fluidized and cured. The area of the adhesive layer after flow and curing (flow, area after cure) was read in the same manner as described above. And the flow amount of the adhesive for circuit member connection which comprises an adhesive bond layer was computed by comparing an area after a flow and hardening with an initial area.

As shown in Tables 1 to 4, the semiconductor circuit member was manufactured so as to satisfy the conditions represented by formula (1); t ₁ ≦ (tc + ts) and formula (2); (tc + ts) ≦ t ₂ In Examples 1 to 14, no void was generated in the cured adhesive layer, and no peeling occurred in the adhesive layer after reflow. Moreover, in Examples 1-14, the conduction | electrical_connection after crimping | compression-bonding and after reflow was obtained favorably. On the other hand, in Comparative Examples 1 and 2 that did not satisfy the conditions of Formula (1) or Formula (2), conduction after crimping and after reflow was not obtained, or generation of voids was observed in the adhesive layer. Inconvenience that peeling occurred after reflow occurred.

Claims (4)

A first electronic member having a first terminal provided on a first substrate, and a second electronic member having a second terminal provided on a second substrate, the first terminal and the second terminal being Opposing to face each other, a semiconductor circuit member is obtained by adhering via an adhesive for circuit member connection containing an adhesive composition containing a high molecular weight component, a thermosetting resin and a curing agent of the thermosetting resin, A method for manufacturing a semiconductor circuit member, comprising:
The adhesive for connecting a circuit member further comprises at least one component selected from the group consisting of a filler, a high molecular weight fine particle having a crosslinked structure, and a powdery compound having a melting point lower than that of solder and solid at room temperature. Including
The circuit member connecting adhesive has a fluidity at a crimping temperature of 1.1 to 2.5 when measured by a disk flow.
The flowability is as follows: an adhesive layer having a thickness of 25 μm and a size of 5 mm × 5 mm formed using the adhesive for connecting circuit members, a glass chip having a thickness of 0.5 mm, a size of 15 mm × 15 mm, and a thickness of 550 μm, The initial area of the adhesive layer read by the image processing apparatus in a state of being sandwiched between a silicon chip having a size of 12 mm × 12 mm is a, and 20 seconds from the silicon chip side under the condition that the temperature reaches 180 ° C. after 20 seconds. When the area of the adhesive layer read by the image processing device after flowing and curing the adhesive layer is heated and pressurized, and b is a value calculated as b / a,
The height of the first terminal is tc, the height of the second terminal is ts, the distance between the first substrate and the second substrate in the semiconductor circuit member is t ₁ , and the circuit member connection before bonding when the thickness of the use adhesive was _{t 2,} the formula _{(1); t 1 ≦ (} tc + ts) and formula (2); so as to satisfy the condition represented by _{(tc + ts) ≦ t 2} , and characterized in that A method for manufacturing a semiconductor circuit member. _{2. The} method of manufacturing a semiconductor circuit member according to claim 1, wherein t ₂ satisfies a relationship represented by (tc + ts) ≦ t ₂ ≦ (tc + ts) × 1.5.   The method for manufacturing a semiconductor circuit member according to claim 1, wherein the adhesive for connecting a circuit member contains the filler and the powdery compound. The semiconductor circuit according to any one of claims 1 to 3, wherein the adhesive for connecting circuit members has a linear expansion coefficient of 40 to 100 ° C after curing of 60 × 10 ^-6 / ° C or less. Manufacturing method of member.

Images