JPH03244137A - Adhesive tape for semiconductor package - Google Patents
Adhesive tape for semiconductor packageInfo
- Publication number
- JPH03244137A JPH03244137A JP2039623A JP3962390A JPH03244137A JP H03244137 A JPH03244137 A JP H03244137A JP 2039623 A JP2039623 A JP 2039623A JP 3962390 A JP3962390 A JP 3962390A JP H03244137 A JPH03244137 A JP H03244137A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- adhesive tape
- resistant
- semiconductor package
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 29
- 239000000853 adhesive Substances 0.000 claims abstract description 16
- 230000001070 adhesive effect Effects 0.000 claims abstract description 16
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 15
- 239000010432 diamond Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000000945 filler Substances 0.000 claims abstract description 9
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 4
- 229920006332 epoxy adhesive Polymers 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920001646 UPILEX Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000013035 low temperature curing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 241000931705 Cicada Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 101100028951 Homo sapiens PDIA2 gene Proteins 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 102100036351 Protein disulfide-isomerase A2 Human genes 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体装置を構成するリードフレーム周辺の
部材間、例えば、リードピン、半導体チップ搭載用基板
、放熱板、半導体チップ自身等の接着を目的とした耐熱
性接着テープに関する。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to bonding between members around a lead frame constituting a semiconductor device, such as lead pins, a semiconductor chip mounting board, a heat sink, and the semiconductor chip itself. The present invention relates to a heat-resistant adhesive tape.
（従来の技術）
従来、樹脂封止型半導体装置は、ＰＤＩＰ、 ＱＦＰ
。(Conventional technology) Conventionally, resin-sealed semiconductor devices include PDIP and QFP.
.
ＰＬＣＣ等に代表されるように、４２アロイ又は銅アロ
イリードフレーム上に、半導体チップをエポキシ系又は
イミド系の銀ペースト、或いは場合により半田ペースト
等のダイボンディングペーストを用いてダイパッド」二
に固定し、金線ワイヤーボンディング法又は銅線ワイヤ
ーボンディング法により半導体チップとリードフレーム
との電気的接続を行い、これら全体を樹脂等のモールド
材によって封止することにより製造されている。As typified by PLCC, a semiconductor chip is fixed to a die pad on a 42 alloy or copper alloy lead frame using epoxy or imide silver paste, or in some cases die bonding paste such as solder paste. It is manufactured by electrically connecting a semiconductor chip and a lead frame using a gold wire wire bonding method or a copper wire wire bonding method, and then sealing the whole of them with a molding material such as resin.
第４図は、従来の樹脂封止型半導体パッケージの一例を
示すもので、リードフレームのダイパッド２」二に、ダ
イボンディングペースト３を介して半導体チップ１が搭
載され、その半導体チップ（とインナーリード４とが金
線ワイヤー５によって接続され、それら全体が樹脂６に
よって封止された構造を有している。Fig. 4 shows an example of a conventional resin-sealed semiconductor package, in which a semiconductor chip 1 is mounted on a die pad 2'' of a lead frame via a die bonding paste 3, and the semiconductor chip (and inner lead 4 are connected by a gold wire 5, and the entire structure is sealed with a resin 6.
ところで、近年種々の要求から、第１図〜第３図に示さ
れるような構造の樹脂封止型半導体パッケージが開発さ
れ、一部は量産化されつつある。Incidentally, in recent years, in response to various demands, resin-sealed semiconductor packages having structures as shown in FIGS. 1 to 3 have been developed, and some of them are being mass-produced.
即ち、第１−図においては、耐熱性フィルム上に接着層
を有する片面接着テープ７により半導体チップ１とイン
ナーリードが固定され、そして半導体チップ１とインナ
ーリード４とが金線ワイヤー５によって接続され、全体
が樹脂６によって封止された構造を有している。また、
第２図においては、半導体チップ１とインナーリード４
とが、両面接着テープ８によって固定され、そして半導
体チップ１とインナーリード４とが金線ワイヤー５によ
って接続され、全体が樹脂６によって封止された構造を
有している。更にまた、第３図においては、放熱板９上
に半導体チップ１がダイボンディングペースト３によっ
て固定され、また両面接着テープ８によってインナーリ
ード４が固定されており、そして半導体チップ１とイン
ナーリード４とが金線ワイヤー５によって接続され、全
体が樹脂６によって封止された構造を有している。That is, in FIG. 1, the semiconductor chip 1 and the inner leads are fixed by a single-sided adhesive tape 7 having an adhesive layer on a heat-resistant film, and the semiconductor chip 1 and the inner leads 4 are connected by a gold wire 5. , has a structure in which the entire structure is sealed with resin 6. Also,
In FIG. 2, a semiconductor chip 1 and an inner lead 4 are shown.
are fixed with double-sided adhesive tape 8, semiconductor chip 1 and inner leads 4 are connected with gold wire 5, and the entire structure is sealed with resin 6. Furthermore, in FIG. 3, the semiconductor chip 1 is fixed on the heat sink 9 with the die bonding paste 3, and the inner leads 4 are fixed with the double-sided adhesive tape 8, and the semiconductor chip 1 and the inner leads 4 are fixed on the heat sink 9. are connected by gold wires 5, and the entire structure is sealed with resin 6.
（発明が解決しようとする課題）
ところが、これら新しい型の樹脂封止型半導体パッケー
ジには、大容量半導体が使用されるため、発熱の問題が
発生している。従来、これら半導体パッケージに使用さ
れる耐熱性の両面或いは片面接着テープにおいては、被
着物間の絶縁の問題から、エポキシ系樹脂やポリイミド
系樹脂等の有機質飼料が使用されている為、熱伝導性が
悪く、半導体パッケージの発生熱を放熱できないという
問題があった。(Problems to be Solved by the Invention) However, since these new types of resin-sealed semiconductor packages use large-capacity semiconductors, heat generation problems have occurred. Conventionally, in the heat-resistant double-sided or single-sided adhesive tapes used for these semiconductor packages, organic feedstocks such as epoxy resins and polyimide resins have been used due to insulation problems between adherends, so thermal conductivity has decreased. There was a problem in that the heat generated by the semiconductor package could not be dissipated.
本発明は、従来の技術における上記のような問題点に鑑
みてなされたものである。The present invention has been made in view of the above-mentioned problems in the conventional technology.
したがって、本発明の目的は、上記第１図ないし第３図
に記載のような接着テープを用いるタイプの樹脂封止型
半導体パッケージにおいて使用した場合に、発熱の問題
を解消し、高信頼性を保つことができる耐熱性接着テー
プを提供することにある。Therefore, an object of the present invention is to solve the problem of heat generation and improve reliability when used in a resin-sealed semiconductor package of the type that uses an adhesive tape as shown in FIGS. 1 to 3 above. The objective is to provide a heat-resistant adhesive tape that can be maintained.
（課題を解決するための手段）
本発明者等は、上記のような問題点を解決するために検
討した結果、耐熱性接着テープの熱伝導性を向上させる
ことによって、」二記の目的が達成されることを見出だ
し、本発明を完成するに至りた。(Means for Solving the Problems) As a result of studies to solve the above-mentioned problems, the inventors of the present invention have achieved the following objectives by improving the thermal conductivity of a heat-resistant adhesive tape. The inventors have discovered that this can be achieved, and have completed the present invention.
即ち、本発明は、耐熱性フィルムの片面又は両面に耐熱
性接着層を設けてなる半導体パッケージ用接着テープに
おいて、該耐熱性接着層がダイヤモンド粉をフィラーと
して含有することを特徴とする。That is, the present invention is an adhesive tape for semiconductor packages comprising a heat-resistant adhesive layer provided on one or both sides of a heat-resistant film, characterized in that the heat-resistant adhesive layer contains diamond powder as a filler.
次に本発明の接着テープを構成する各層について詳記す
る。Next, each layer constituting the adhesive tape of the present invention will be described in detail.
（耐熱性フィルム）
厚さ５〜３００ ａｎ、好ましくは１２．５〜１５０
琲の、例えば、ポリイミド、ポリエーテルイミド、ポリ
フェニレンサルファイド、ポリエーテルエーテルケトン
、ポリパラバン酸、ポリエチレンテレフタレ
ート
ラスクロス、エポキシ樹脂−ポリイミド−ガラスクロス
等の複合耐熱フィルムが使用される。(Heat-resistant film) Thickness 5-300 an, preferably 12.5-150 an
For example, a composite heat-resistant film made of polyimide, polyetherimide, polyphenylene sulfide, polyether ether ketone, polyparabanic acid, polyethylene terephthalate cloth, epoxy resin-polyimide-glass cloth, etc. is used.
（耐熱性接着層）
耐熱性接着層は、耐熱性接着剤中に、フィラーとしてダ
イヤモンド粉が分散されてなるものであって、耐熱性接
着剤としては、公知のもの、例えば、ＮＢＲ系接着剤、
ポリエステル系接着剤、ポリイミド系接着剤、エポキシ
系接着剤を用いることができる。(Heat-resistant adhesive layer) The heat-resistant adhesive layer is made by dispersing diamond powder as a filler in a heat-resistant adhesive, and the heat-resistant adhesive may be a known one, such as an NBR adhesive. ,
Polyester adhesives, polyimide adhesives, and epoxy adhesives can be used.
これら接着剤中に分散させるダイヤモンド粉としては、
工業製品として市販されている、いわゆるダイヤモンド
ダストが使用されるが、粒度１卵以下に分級したものが
好適に使用される。また、ダイヤモンド粉の添加量は、
耐熱性接着層に対して５〜６０重量％、特に１０〜３０
重量％の範囲に設定するのが好ましい。添加量が５重量
％よりも低くなると、熱伝導性の改善効果が小さくなり
、また６０重量％よりも多くなると、接着テープの接着
強度が低下し、かつラミネート等の加工性が悪くなる。The diamond powder dispersed in these adhesives is
So-called diamond dust, which is commercially available as an industrial product, is used, but one classified to a particle size of 1 egg or less is preferably used. In addition, the amount of diamond powder added is
5 to 60% by weight, especially 10 to 30% by weight based on the heat-resistant adhesive layer
It is preferable to set it within a range of % by weight. If the amount added is less than 5% by weight, the effect of improving thermal conductivity will be reduced, and if it is more than 60% by weight, the adhesive strength of the adhesive tape will decrease and the processability of lamination etc. will deteriorate.
耐熱性接着層は、」二記耐熱性接着剤を所望により溶剤
に溶解した溶液中に、ダイヤモンド粉を分散させた接着
組成物を、上記耐熱性フィルム」二に塗布し、乾燥する
ことによって形成することができる。その場合、接着剤
が硬化型の場合には、塗布後の乾燥を、Ｂステージの半
硬化状態になるまで行えばよい。また、耐熱性接着層は
、乾燥後の膜厚が、ｉ〜 １５０釧、特に５〜５０祠の
範囲になるように形成するのか好ましい。The heat-resistant adhesive layer is formed by coating the above-mentioned heat-resistant film 2 with an adhesive composition in which diamond powder is dispersed in a solution in which the heat-resistant adhesive described in 2 is dissolved in a solvent as desired, and then dried. can do. In that case, if the adhesive is a hardening type, drying after application may be performed until it reaches a semi-hardened state of B stage. Further, it is preferable that the heat-resistant adhesive layer is formed so that the thickness after drying is in the range of i to 150 mm, particularly in the range of 5 to 50 mm.
さらにまた、上記のようにして形成された耐熱性接着層
は、熱伝導率が１．０−２（Ｗ／ｃｍ−Ｋ）以上である
ことが好ましい。Furthermore, the heat-resistant adhesive layer formed as described above preferably has a thermal conductivity of 1.0-2 (W/cm-K) or more.
（保護フィルム）
本発明の接着テープにおいては、必要に応じて、耐熱性
接着層の上に膜厚ｌ〜２００釧、好ましくはｌＯ〜１０
０μｍの保護フィルムを設けてもよい。保護フィルムを
設けることにより、耐熱性接着層を保護してその表面の
清浄度を維持することができ、また、残留する溶剤の含
有量が変化するのを避けることかできるので、接着テー
プを保存する場合に、保護フィルムを設けるのが好まし
い。(Protective film) In the adhesive tape of the present invention, if necessary, a film thickness of 1 to 200 mm, preferably 10 to 10 mm, is applied on the heat-resistant adhesive layer.
A protective film of 0 μm may be provided. Providing a protective film can protect the heat-resistant adhesive layer and maintain its surface cleanliness, and can also avoid changes in the residual solvent content, making it easier to preserve the adhesive tape. In this case, it is preferable to provide a protective film.
保護フィルムとして使用可能なものとしては、ポリプロ
ピレンフィルム、フッ素樹脂系フィルム、ポリエチレン
フィルム、ポリエチレンテレフタレートフィルム、紙及
び場合によってこれ等にシリコーン樹脂等で剥離性を付
与したものがあげられる。Examples of materials that can be used as the protective film include polypropylene films, fluororesin films, polyethylene films, polyethylene terephthalate films, paper, and, in some cases, films to which removability is imparted using silicone resin or the like.
本発明において、これ等保護フィルムは、使用に際して
剥離する必要があるため、その９０°ビ一ル剥離強度が
０．０１〜７ｇの範囲にあることが望ましい。何故なら
ば、剥離強度が上記の範囲よりも低い場合には、接着テ
ープ搬送時に保護フィルムが簡単に剥離するなどの問題
を生じ、また上記範囲よりも大きい場合には、保護フィ
ルムが耐熱性接着層からきれいに剥がれず、作業性が悪
い等の問題を起こすからである。In the present invention, since these protective films need to be peeled off before use, it is desirable that their 90° vinyl peel strength be in the range of 0.01 to 7 g. This is because if the peel strength is lower than the above range, problems such as the protective film peeling off easily when the adhesive tape is transported will occur, and if it is higher than the above range, the protective film will not adhere to the heat-resistant adhesive. This is because it cannot be peeled off cleanly from the layer, causing problems such as poor workability.
（実施例）
以下、本発明を実施例によって詳記する。なお、配合部
数は全て重量部である。(Examples) Hereinafter, the present invention will be described in detail with reference to Examples. In addition, all the blended parts are parts by weight.
片面接着テープの作成例
接着剤として、低温硬化型エポキシ系接着剤（５Ｇ−Ｅ
ＰＯ、セメダイン■製）に、フィラーとして、粒径０．
（祠のダイヤモンド粉（ＩＲＭ、東名ダイヤモンド■製
）を、エポキシ系接着剤に対して４０重量％添加し、サ
ンドミルで分散した。得られた接着剤組成物を、膜厚５
０即の耐熱性ポリイミドフィルム（商品名：カプトン２
００＋１．東しデュボン社製）の上に乾燥後の膜厚が２
０μになるように塗布し、５０℃で１０分間乾燥してＢ
ステージの硬化状態の耐熱性接着層を形成し、接着テー
プを得た。Example of making a single-sided adhesive tape: Low-temperature curing epoxy adhesive (5G-E)
PO, manufactured by Cemedine ■) as a filler, with a particle size of 0.
(Shrine's diamond powder (IRM, manufactured by Tomei Diamond ■) was added at 40% by weight to the epoxy adhesive and dispersed with a sand mill.The resulting adhesive composition was
Instant heat-resistant polyimide film (product name: Kapton 2)
00+1. The film thickness after drying is 2.
Apply to 0μ and dry at 50℃ for 10 minutes
A heat-resistant adhesive layer in a cured stage was formed to obtain an adhesive tape.
試験例
また、硬化後の熱伝導性について調査する為に、上記と
同様の低温硬化型エポキシ系接着剤に、フィラーとして
、粒径０．Ｌμｍのアルミナ（ＡＬ−１６０８Ｇ−（、
昭和電工■製）粒径０．１蝉のダイヤモンド粉（ＩＲＭ
、東名ダイヤモンド■製）を、第１図に示す量で配合し
、サンドミルで分散した後、上記実施例と同様にして耐
熱性ポリイミドフィルムの上に塗布し、次いで熱風循環
式乾燥機中で５０℃、１２時間の乾燥条件の下に乾燥さ
せ、完全硬化状態の耐熱性接着層を形成した。この耐熱
性接着層を、所定のサイズに取り、試験サンプルＮｏ、
１〜Ｎｏ、 ５とした。Test Example: In addition, in order to investigate the thermal conductivity after curing, a filler with a particle size of 0.5 mm was added to the same low-temperature curing epoxy adhesive as above. Lμm alumina (AL-1608G-(,
Made by Showa Denko ■) particle size 0.1 cicada diamond powder (IRM
(manufactured by Tomei Diamond ■) in the amounts shown in Figure 1, dispersed with a sand mill, coated on a heat-resistant polyimide film in the same manner as in the above example, and then dried in a hot air circulation dryer for 50 minutes. It was dried under drying conditions at ℃ for 12 hours to form a completely cured heat-resistant adhesive layer. This heat-resistant adhesive layer was taken to a predetermined size, test sample No.
1 to No, 5.
これらの試験サンプルについて、レーザーフラッシュ法
熱定数測定装置ＴＣ−３０００ＲＮＣを用いて熱伝導率
を測定した。その結果を第１表に示す。Thermal conductivity of these test samples was measured using a laser flash method thermal constant measuring device TC-3000RNC. The results are shown in Table 1.
第１表
（発明の効果）
本発明の接着テープは、上記の実施例における比較から
明らかなように、耐熱性接着層中に、フィラーとしてダ
イヤモンド粉を含有させたから、熱伝導性に優れ、樹脂
封止型半導体パッケージに０
使用する際に、高温での処理においても、高信頼性を保
つことが可能になる。Table 1 (Effects of the Invention) As is clear from the comparison in the above examples, the adhesive tape of the present invention contains diamond powder as a filler in the heat-resistant adhesive layer, so it has excellent thermal conductivity and the resin When used in sealed semiconductor packages, it is possible to maintain high reliability even during processing at high temperatures.
第１図ないし第３図は、それぞれ接着テープが使用され
るタイプの樹脂封止型半導体パッケージの断面図、第４
図は、接着テープを使用しない従来の樹脂封止型半導体
パッケージの断面図である。
１・・・半導体チップ、２・・・ダイパッド、３・・・
ダイボンディングペースト、４・・・インナーリード、
５・・・金線ワイヤー、６・・・樹脂、７・・・片面接
着テープ、８・・・両面接着テープ、９・・・放熱板。Figures 1 to 3 are a sectional view of a resin-sealed semiconductor package of the type that uses adhesive tape, and Figure 4 is a cross-sectional view of a type of resin-sealed semiconductor package that uses adhesive tape.
The figure is a cross-sectional view of a conventional resin-sealed semiconductor package that does not use adhesive tape. 1... Semiconductor chip, 2... Die pad, 3...
die bonding paste, 4...inner lead,
5... Gold wire, 6... Resin, 7... Single-sided adhesive tape, 8... Double-sided adhesive tape, 9... Heat sink.
Claims (3)
設けてなる半導体パッケージ用接着テープにおいて、該
耐熱性接着層がダイヤモンド粉をフィラーとして含有す
ることを特徴とする半導体パッケージ用接着テープ。(1) An adhesive tape for semiconductor packages comprising a heat-resistant adhesive layer provided on one or both sides of a heat-resistant film, wherein the heat-resistant adhesive layer contains diamond powder as a filler.
有し、かつフィラーとして粒度１μｍ以下のダイヤモン
ド粉を５〜６０重量％含有することを特徴とする特許請
求の範囲第１項に記載の半導体パッケージ用接着テープ
。(2) Claim 1, characterized in that the heat-resistant adhesive layer has a film thickness in the range of 1 to 150 μm, and contains 5 to 60% by weight of diamond powder with a particle size of 1 μm or less as a filler. Adhesive tape for semiconductor packages described in .
ｍ・Ｋ）以上であることを特徴とする特許請求の範囲第
１項に記載の半導体パッケージ用接着テープ。(3) The thermal conductivity of the heat-resistant adhesive layer is 10^-^2 (W/c
The adhesive tape for semiconductor packages according to claim 1, characterized in that the adhesive tape has an adhesive strength of at least mK).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2039623A JP2867056B2 (en) | 1990-02-22 | 1990-02-22 | Adhesive tape for semiconductor package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2039623A JP2867056B2 (en) | 1990-02-22 | 1990-02-22 | Adhesive tape for semiconductor package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03244137A true JPH03244137A (en) | 1991-10-30 |
| JP2867056B2 JP2867056B2 (en) | 1999-03-08 |
Family
ID=12558235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2039623A Expired - Fee Related JP2867056B2 (en) | 1990-02-22 | 1990-02-22 | Adhesive tape for semiconductor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2867056B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1643511A1 (en) | 2004-07-16 | 2006-04-05 | Siemens Aktiengesellschaft | Glow protection band |
| JP2009033081A (en) * | 2007-07-25 | 2009-02-12 | Yiguang Electronic Ind Co Ltd | Light emitting diode device |
| CN111492009A (en) * | 2017-12-12 | 2020-08-04 | 三星Sdi株式会社 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
-
1990
- 1990-02-22 JP JP2039623A patent/JP2867056B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1643511A1 (en) | 2004-07-16 | 2006-04-05 | Siemens Aktiengesellschaft | Glow protection band |
| JP2009033081A (en) * | 2007-07-25 | 2009-02-12 | Yiguang Electronic Ind Co Ltd | Light emitting diode device |
| CN111492009A (en) * | 2017-12-12 | 2020-08-04 | 三星Sdi株式会社 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same |
| TWI782155B (en) * | 2017-12-12 | 2022-11-01 | 南韓商三星Ｓｄｉ股份有限公司 | Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2867056B2 (en) | 1999-03-08 |
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