JPS606558B2 - Resin packaging method for electronic components - Google Patents

Resin packaging method for electronic components

Info

Publication number
JPS606558B2
JPS606558B2 JP13854877A JP13854877A JPS606558B2 JP S606558 B2 JPS606558 B2 JP S606558B2 JP 13854877 A JP13854877 A JP 13854877A JP 13854877 A JP13854877 A JP 13854877A JP S606558 B2 JPS606558 B2 JP S606558B2
Authority
JP
Japan
Prior art keywords
resin
ceramic substrate
metal plate
packaging method
electronic components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13854877A
Other languages
Japanese (ja)
Other versions
JPS5471369A (en
Inventor
明信 玉置
隼人 高砂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13854877A priority Critical patent/JPS606558B2/en
Publication of JPS5471369A publication Critical patent/JPS5471369A/en
Publication of JPS606558B2 publication Critical patent/JPS606558B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は混成集積回路(以下HICと略す)の樹脂パッ
ケージ法に関し、さらに詳しくはセラミック基板上のH
ICを金属板に接着させてそのセラミック基板の端部に
ガラス転移温度(以下Tgと略す。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin packaging method for hybrid integrated circuits (hereinafter abbreviated as HIC), and more specifically, to a method for packaging hybrid integrated circuits (HIC) on a ceramic substrate.
An IC is bonded to a metal plate, and the edge of the ceramic substrate has a glass transition temperature (hereinafter abbreviated as Tg).

)60午0以下の熱硬化性樹脂でシールした後樹脂パッ
ケージする新規なパッケージ方法を提供するものである
。HICはセラミック基板、主にアルミナ磁器坂上に導
体、抵抗を印刷或いは葵着で形成された上に種々の半導
体チップ、コンデンサーチップがハンダ等で取付けられ
た回路部品である。
) A new packaging method is provided in which resin packaging is performed after sealing with a thermosetting resin of 60 pm or less. HIC is a circuit component in which various semiconductor chips and capacitor chips are attached with solder or the like to a ceramic substrate, mainly alumina porcelain, on which conductors and resistors are printed or bonded.

このHICは種々の環境条件での信頼性向上をはかるた
めパッケージが施される。
This HIC is packaged to improve reliability under various environmental conditions.

一般に業界では、低コスト化が可能な樹脂パッケージに
移行しているのが現状である。かかる樹脂パッケージ法
にはトランスファーモールド、キヤステング、デイツピ
ング、ポツテイング、ドロッピング、タブレット、流動
浸せき塗装などの処理技術があり、用いる樹脂はェポキ
シ樹脂、シリコン樹脂などがある。
In general, the current situation in the industry is that there is a shift to resin packages that can reduce costs. Such resin packaging methods include processing techniques such as transfer molding, casting, dipping, potting, dropping, tableting, and fluidized dip coating, and the resins used include epoxy resins, silicone resins, and the like.

樹脂パッケージされたHICの発熱特性が大きい場合、
いまいま放熱板としての金属板にHICのセラミック基
板を接着させた後に樹脂パッケージが行なわれる。金属
板とセラミック基板の接着は一般に硬質の接着剤を用い
ると金属板とセラミック基板の熱膨張係数の差によりセ
ラミック基板を破壊させるため、ゴム状の接着剤が用い
られる。また、樹脂パッケージされたHICは耐ヒート
サイクル性、耐湿・耐水性、機械的強度などの特性が要
求される。そこで、パッケージする樹脂はTgが80o
o以上、望ましくは100qo以上が必要である。
If the resin-packaged HIC has large heat generation characteristics,
After bonding the HIC ceramic substrate to a metal plate serving as a heat sink, resin packaging is performed. Generally, a rubber-like adhesive is used to bond a metal plate and a ceramic substrate because if a hard adhesive is used, the ceramic substrate will be destroyed due to the difference in coefficient of thermal expansion between the metal plate and the ceramic substrate. Further, resin-packaged HICs are required to have properties such as heat cycle resistance, moisture resistance and water resistance, and mechanical strength. Therefore, the packaging resin has a Tg of 80o.
o or more, preferably 100 qo or more.

なお、HICの回路部品への熱応力の緩和のためにいま
しばTgの低いやわらかい樹脂を塗布し、バッファ剤と
して樹脂パッケージされている。従来の上記金属板付H
ICの樹脂パッケージ部品は、耐ヒートサイクルテスト
、耐湿耐水性テストでいよいよワレや耐湿不良を起す。
In order to alleviate thermal stress on the HIC circuit components, a soft resin with a low Tg is often applied and the components are packaged in the resin as a buffer agent. Conventional H with above metal plate
IC resin package parts often show cracks and poor moisture resistance during heat cycle tests and moisture and water resistance tests.

この原因を鋭意研究した結果、金属板とセラミック基板
がゴム状の接着剤で接着されているためそれぞれ独立し
て膨張収縮を起し、その上部にパッケージされたTg8
0午0以上の樹脂がセラミック端部よりハクリを起し金
属板とハガレを起していることを見出した。そこで、本
発明は金属板に接着されたセラミック板の端部をTg6
000以下、望ましくは20℃以下の熱硬化性樹脂でシ
ールすることにより従来の欠点を解決した。
As a result of intensive research into the cause of this, we found that since the metal plate and ceramic substrate are bonded with a rubber-like adhesive, each expands and contracts independently, and the Tg8 packaged on top of the metal plate and ceramic substrate expand and contract independently.
It was found that the resin with a temperature of 0.0 or more peeled off from the ceramic edge and peeled off from the metal plate. Therefore, in the present invention, the end portion of the ceramic plate bonded to the metal plate has a Tg6
The conventional drawbacks were solved by sealing with a thermosetting resin having a temperature of 0.000°C or less, preferably 20°C or less.

また、シール効果はセラミック金属板の間のゴム系接着
剤中のボィドの温度変化による出入がなくなり、樹脂パ
ッケージ時の加熱、冷却によるボィド、ピンホールの発
生のないことも見出した。特にポツティング、ドロツピ
ング、ダブレツト、流動浸せき塗装による樹脂パッケー
ジは加熱工程による空気の出入りがなく、ボィド、ピン
ホールのない良好な処理法であることが確認された。な
お、セラミック基板のエッヂからのクラック発生も防止
することもできる。以下、本発明の一実施例を図面に従
い説明する。
It has also been found that the sealing effect is such that voids in the rubber adhesive between the ceramic metal plates do not come in and out due to temperature changes, and that voids and pinholes do not occur due to heating and cooling during resin packaging. In particular, it was confirmed that resin packages using potting, dropping, doublet, or fluidized dip coating are good processing methods that do not allow air to enter or exit during the heating process, and are free of voids and pinholes. Incidentally, it is also possible to prevent cracks from occurring from the edges of the ceramic substrate. An embodiment of the present invention will be described below with reference to the drawings.

第1図は従来の樹脂パッケージ品でアルミニウム板1上
にシリコン接着剤5でアルミナ磁器板2を接着し、回路
部品4を熱硬化性樹脂3でパッケージした断面図で示し
たものである。
FIG. 1 is a cross-sectional view of a conventional resin packaged product in which an alumina porcelain plate 2 is bonded onto an aluminum plate 1 with a silicone adhesive 5, and a circuit component 4 is packaged with a thermosetting resin 3.

第2図は本発明による樹脂パッケ−ジ品であり、アルミ
ニウム板1の上に接着されたアルミナ磁器板2の端部に
しTg6000以下の熱硬化性樹脂7でシールを施した
ものである。
FIG. 2 shows a resin package product according to the present invention, in which the ends of an alumina porcelain plate 2 bonded onto an aluminum plate 1 are sealed with a thermosetting resin 7 having a Tg of 6000 or less.

本発明は、リード部6よりの水分浸入を防止するととも
にアルミナ磁器のエッヂ部の応力を緩和し、更にはアル
ミナ磁器の端部よりのハクリを防止することができる。
本発明に用いるTg60o○以下の熱硬化性樹脂は、通
常のェポキシ樹脂、ポリエステル樹脂「ポリウレタン樹
脂などがある。
The present invention can prevent moisture from entering through the lead portion 6, relieve stress at the edge of the alumina porcelain, and further prevent peeling from the edge of the alumina porcelain.
Thermosetting resins with a Tg of 60° or less used in the present invention include ordinary epoxy resins, polyester resins, polyurethane resins, and the like.

必要ならば本発明による熱硬化性樹脂に無機質の充てん
剤が含まれていてもよい。本発明の作用をさらに詳しく
説明すると、アルミニウム板1の線膨張係数が24xl
o‐6、アルミナ磁器板が7×10−6、パッケージ用
の樹脂は一般に30〜70×10‐6である。
If necessary, the thermosetting resin according to the invention may contain an inorganic filler. To explain the operation of the present invention in more detail, the coefficient of linear expansion of the aluminum plate 1 is 24xl.
o-6, alumina porcelain plate is 7 x 10-6, and resin for packaging is generally 30 to 70 x 10-6.

パッケージ用樹脂の線膨張係数の低い方は無機質の充て
ん剤が混入されているためで弾力率は高い。一般に2種
類の接合された材料間に発生する熱応力は、8こ△ぴ・
△T・Eで(汎ま残留応力、△1−エアTはTgと必要
温度との温度差「△Qは線膨張係数の差、Eは樹脂の弾
性率、yは樹脂のポアソン比を示す。
The packaging resin has a low coefficient of linear expansion because it contains an inorganic filler, so it has a high modulus of elasticity. Generally, the thermal stress that occurs between two types of joined materials is 8
△T・E (generalized residual stress, △1-air T is the temperature difference between Tg and the required temperature, △Q is the difference in linear expansion coefficient, E is the elastic modulus of the resin, and y is the Poisson's ratio of the resin. .

)示めされ、一般にTg以下で増大し変形をきたさない
限り、6が小さいほどワレやハク川こ対し有利である。
本発明による熱硬化性樹脂はTgが低いため■リード部
の残留応力が小さい、■アルミニウム板とアルミナ磁器
板の動きを緩和する、■アルミナ磁器板のエッヂ部にお
ける残留応力の集中を緩和する等の効果がある。
), and in general, the smaller 6 is, the more advantageous it is against cracking and cracking, as long as it does not increase and deform below Tg.
Since the thermosetting resin according to the present invention has a low Tg, it has the following properties: ■ Residual stress in the lead part is small, ■ Relaxes the movement of the aluminum plate and alumina porcelain plate, ■ Relaxes the concentration of residual stress at the edge part of the alumina porcelain plate, etc. There is an effect.

この3つの大きな働きをするため信頼性の高いmCを作
ることができる。以下更に実施例を詳しく説明する。放
熱板にアルミニウム30×30×1.5側の上に25×
25×0.8柳の回路部品の取付けられたアルミナ磁器
板を市販のシリコン接着剤により接着し、水平に置いた
14ピンのシングルィンタィプのHICにT滋ぴ0以下
のポリウレタン樹脂、ポリシン/ボラィト(市販の商品
名)を針状物でアルミナ磁器板の端部4すみに、第2図
のように塗布し、室温2時間放置し硬化させた。このH
ICの上にスコッチキャストNo.28泌/B(市販商
品名)をドロッピングして片面全面に約1物の樹脂層を
形成させ、125005時間加熱硬化させた。比較品と
して本発明による上記ポリウレタン樹脂を塗布しないで
上記と同一の処理を施したHICを作った。これらのH
ICを各10コずつ、一6000〜1500○のヒート
サイクルテストとスチームプレッシャーテストを行なっ
た。その結果を表に示す。表 以上で説明した本発明によれば信頼性の高いHICを得
られることができる。
Because it performs these three major functions, it is possible to create a highly reliable mC. Examples will be described in further detail below. Aluminum 30x30x1.5 on the heat sink side 25x
An alumina porcelain plate with 25 x 0.8 willow circuit components attached was glued using a commercially available silicone adhesive, and a polyurethane resin with a T-thickness of 0 or less, polysin was attached to a 14-pin single pin type HIC placed horizontally. /Borite (commercially available product name) was applied to the four corners of the alumina porcelain plate using a needle-shaped object as shown in FIG. 2, and the mixture was left at room temperature for 2 hours to harden. This H
Scotchcast No. on the IC. 28/B (commercial product name) was dropped to form a resin layer of about 1% on the entire surface of one side, and the resin layer was heated and cured for 125,005 hours. As a comparative product, a HIC was prepared which was subjected to the same treatment as above without applying the polyurethane resin according to the present invention. These H
A heat cycle test of 16,000 to 1,500 degrees and a steam pressure test were conducted on 10 ICs each. The results are shown in the table. According to the present invention explained above, a highly reliable HIC can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の樹脂パッケージ法を示す構成図、第2図
は本発明の一実施例を示す構成図である。 図中、1は金属板、2はセラミふク基板、3はパッケー
ジ用樹脂、4は回路部品、7は熱硬化性樹脂である。 なお、図中同一符号は同一又は相当部分を示す。第1図 第2図
FIG. 1 is a block diagram showing a conventional resin packaging method, and FIG. 2 is a block diagram showing an embodiment of the present invention. In the figure, 1 is a metal plate, 2 is a ceramic foil substrate, 3 is a packaging resin, 4 is a circuit component, and 7 is a thermosetting resin. Note that the same reference numerals in the figures indicate the same or equivalent parts. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 1 セラミツク基板上に複数個の電子部品を実装した混
成集積回路において、前記セラミツク基板を放熱用の金
属板上に接着し、次いでそのセラミツク基板の端部をガ
ラス転移温度60℃以下の熱硬化性樹脂でシールした後
、前記金属板上の前記セラミツク基板および電子部品の
みを樹脂でパツケージすることを特徴とする電子部品の
樹脂パツケージ法。
1. In a hybrid integrated circuit in which a plurality of electronic components are mounted on a ceramic substrate, the ceramic substrate is bonded onto a metal plate for heat dissipation, and then the edges of the ceramic substrate are bonded to a thermosetting material with a glass transition temperature of 60°C or less. A resin packaging method for electronic parts, characterized in that after sealing with resin, only the ceramic substrate on the metal plate and the electronic parts are packaged with resin.
JP13854877A 1977-11-17 1977-11-17 Resin packaging method for electronic components Expired JPS606558B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13854877A JPS606558B2 (en) 1977-11-17 1977-11-17 Resin packaging method for electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13854877A JPS606558B2 (en) 1977-11-17 1977-11-17 Resin packaging method for electronic components

Publications (2)

Publication Number Publication Date
JPS5471369A JPS5471369A (en) 1979-06-07
JPS606558B2 true JPS606558B2 (en) 1985-02-19

Family

ID=15224714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13854877A Expired JPS606558B2 (en) 1977-11-17 1977-11-17 Resin packaging method for electronic components

Country Status (1)

Country Link
JP (1) JPS606558B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2576541B2 (en) * 1987-11-13 1997-01-29 旭硝子株式会社 Semiconductor device
JP4941509B2 (en) * 2008-10-20 2012-05-30 株式会社デンソー Electronic control device
JP5691794B2 (en) * 2008-10-20 2015-04-01 株式会社デンソー Electronic control unit
JP5556007B2 (en) * 2008-12-12 2014-07-23 株式会社デンソー Electronic equipment
JP5146358B2 (en) * 2009-02-27 2013-02-20 株式会社デンソー Electronic equipment

Also Published As

Publication number Publication date
JPS5471369A (en) 1979-06-07

Similar Documents

Publication Publication Date Title
KR100268205B1 (en) Attaching heat sinks directly to flip chips and ceramic chip carriers
JP3392590B2 (en) Chip carrier module and method for producing the same
KR100222157B1 (en) Semiconductor package
US5875545A (en) Method of mounting a connection component on a semiconductor chip with adhesives
US5610442A (en) Semiconductor device package fabrication method and apparatus
JP5121353B2 (en) Overmolded MCMIC package and manufacturing method thereof
JPH0774282A (en) Semiconductor device
JP4385324B2 (en) Semiconductor module and manufacturing method thereof
JPS606558B2 (en) Resin packaging method for electronic components
KR20090089399A (en) An integrated circuit package and a method for dissipating heat in an integrated circuit package
JPH03201463A (en) Post-mold cavity type package for integrated circuit having internal dam bar
JPS61230344A (en) Resin-sealed semiconductor device
US7326593B2 (en) Method of producing a package for semiconductor chips
JPH1197569A (en) Semiconductor package
JP2504465B2 (en) Semiconductor device
JP2555519Y2 (en) Surface-mount resin-encapsulated semiconductor device
JPH09252064A (en) Bga-type semiconductor device
JP2943912B2 (en) Semiconductor device and manufacturing method thereof
JPH07302863A (en) Resin-sealed semiconductor device, and its manufacture
JPS61287132A (en) Manufacture of chip carrier for electronic element
JPH035662B2 (en)
JPH0521342B2 (en)
KR20070014671A (en) Substrate manufacturing method
JPH0478161A (en) Semiconductor device
JPS6094745A (en) Printed circuit board