JP3155811B2 - Method for manufacturing resin-encapsulated semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-sealed semiconductor device capable of performing in-line resin sealing.

[0002]

2. Description of the Related Art Resin-sealed semiconductor devices have hitherto been generally manufactured by resin-sealing semiconductor elements by a transfer molding method. This is done by heating and melting a tablet made of, for example, an epoxy molding material powder mainly composed of an epoxy resin and an inorganic filler, injecting it into a mold using a transfer molding machine, molding at a high temperature and high pressure, and curing. This is a method of resin-sealing a semiconductor element with the obtained epoxy resin composition.

[0003] By the way, packages of resin-encapsulated semiconductor devices have recently been increasing in size and decreasing in thickness, and this tendency has made it difficult to use the transfer molding method as described above. More recently, the variety of packages has been diversifying, and the shift from small-volume, high-volume production to multi-volume, small-volume production has been made. Transfer molding is basically not suitable for flexible production styles, such as multi-volume, small-volume production. Therefore, a new method replacing the transfer molding method is currently required.

On the other hand, Japanese Patent Application Laid-Open No. 3-265162 discloses that a sealing insulator having a metal layer and a resin layer formed on both surfaces thereof is heat-pressed to a semiconductor element and sealed with a resin. A technique for manufacturing a resin-sealed semiconductor device has been disclosed. FIGS. 15A and 15B show a manufacturing process of the resin-sealed semiconductor device and cross-sectional views after sealing. That is, in such a method, first, as shown in FIG. 15A, the resin layer 14, the metal layer 15, and the resin layer 16 are formed.
Are laminated in this order, and two sealing insulators 17 are formed on the resin layer 1.
4 so as to face each other, and these sealing insulators 17 are provided.
A TAB (tape automated bonding) type semiconductor element 20 bonded to a film carrier 19 by a bump 18 is arranged between the bumps 18. Subsequently, the resin layer 14 of the two sealing insulators 17 is heated by plate heating or infrared heating to a softened and molten state, and the semiconductor element 20 is sandwiched between the two sealing insulators 17 and pressed. By such a process, FIG.
As shown in (b), a resin-sealed semiconductor device in which the semiconductor element 20 is sealed in the resin layer 14 and the metal layer 15 and the resin layer 16 are disposed outside the semiconductor element 20 is obtained. According to such a method, resin sealing can be performed in-line, and even when many types of semiconductor elements 20 are sealed with resin, the sealing insulators 17 having different structures, shapes, etc. each time.
Can be flexibly handled simply by supplying the package, and is also suitable for making the package larger and thinner. However, in the resin-encapsulated semiconductor device as described above,
Since the interface between the metal layer 15 and the resin layers 14 and 16 is present in the sealing insulator 17, there has been a problem that separation at the interface is likely to occur.

[0005]

As described above, in the conventional resin-encapsulated semiconductor device, there has been a problem that separation occurs at the interface between the metal layer and the resin layer of the sealing insulator. In particular, ASIC (Application Specialization)
In the case of a surface mount type package typified by a gate array such as a ic IC) or a standard cell type LSI, when a resin-encapsulated semiconductor device is mounted on a substrate, a process such as vapor phase reflow, infrared reflow, and solder immersion is performed. Exposure to high temperatures (215-260 ° C). For this reason, the moisture absorbed inside the package is explosively gasified at the interface between the metal layer and the resin layer, and a high pressure is applied. As a result, the interface between the metal layer and the resin layer is separated, and a package crack occurs. For example, the reliability of the resin-encapsulated semiconductor device is reduced.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a resin-encapsulated semiconductor device which suppresses the occurrence of package cracks during surface mounting and the like, has high moisture resistance reliability, and can easily cope with an increase in size and thickness. To provide.

[0007]

According to the present invention, there is provided a method of manufacturing a resin-sealed semiconductor device, comprising: a sealing insulator having a metal layer having a through hole and resin layers formed on both surfaces of the metal layer. forming a step and a step of placing overlapping with said sealing insulator and the semiconductor element, insulation for the seal which is arranged to overlap
And a step of the semiconductor element is resin-sealed by heating and pressing the Entai, through hole of the metal layer is a semiconductor
It is characterized by being provided at a position facing the active surface of the element .

In the present invention, the resin used for the resin layer constituting the sealing insulator has a large electric insulation resistance and a good hygroscopic property in order to secure the reliability of the obtained resin-sealed semiconductor device. Smallness, high heat resistance, high strength, high adhesiveness, and the like are required. Such resins include polyimide resins, epoxy resins,
Unsaturated polyester resin, phenol resin, maleimide resin, melamine resin, urea resin, diallyl phthalate resin, silicone resin, furan resin, xylene-formaldehyde resin, ketone-formaldehyde resin, aniline resin, alkyd resin, triallyl cyanurate resin, acrolein Thermosetting resins such as resin, triazine-based resin, and dicyclopentadiene-based resin are exemplified. In addition, a thermoplastic resin or engineering plastics may be used.

In order to adjust the coefficient of thermal expansion of the resin layer and improve the strength, these resins include various fibers, cloths,
Alternatively, an inorganic or organic filler may be added. Examples of the fibers include inorganic fibers such as glass fibers and quartz fibers, and organic fibers such as nylon, polyester, and phenol. Examples of the cloth include various woven fabrics such as a glass cloth, a carbon fiber cloth, and a polyamide fiber cloth. As the inorganic filler, quartz powder, fused silica powder,
Examples include spherical fused silica, silicon nitride, aluminum nitride, and silicon carbide. Examples of the organic filler include phenol resin cured powder, polyimide resin cured powder, and the like.

[0010] Further, if necessary, these resins
Rubbers such as silicone rubber and MBS rubber, crack resistance improvers such as elastomers, flame retardants such as halogens and antimony trioxide, and the like can be added.

In the present invention, the metal layer may be a film or a plate having a certain strength. The thickness of the metal layer is appropriately set according to the required thickness of the sealing insulator. The material of the metal layer is iron, nickel, copper,
Gold, silver, aluminum, tin, stainless steel, and lead,
And alloys thereof. At least one through hole is provided in the metal layer.

The sealing insulator according to the present invention has a structure in which resin layers are formed on both surfaces of a metal layer having a through hole, that is, a three-layer structure including at least a resin layer, a metal layer, and a resin layer. . Of the two resin layers on the upper and lower surfaces of the metal layer, the resin layer directly in contact with the active surface of the semiconductor element needs to have high reliability. Therefore, it is preferable to use a general sealing resin in which an inorganic filler such as fused silica or silicon nitride is added to an epoxy resin or a polyimide resin. Alternatively, a sealing resin to which an epoxy resin, a polyimide resin, or the like is attached by impregnating a glass cloth with a resin solution may be used. On the other hand, of the two resin layers, the resin layer on the outer surface that is not in direct contact with the semiconductor element is not particularly limited. That is, the same sealing resin as the resin layer directly in contact with the semiconductor element may be used, or an ordinary coating resin may be used.

[0013] Such a sealing insulator is obtained by applying the same sealing resin to both surfaces of a metal layer, or by coating a highly reliable sealing resin on one surface (semiconductor element side) of the metal layer. Apply,
It can be produced by a method of applying a normal coating resin to the other surface, a method of attaching a resin to a glass cloth, and then laminating and attaching the resin to a metal layer.

In the sealing insulator according to the present invention, the two resin layers provided on the upper and lower surfaces of the metal layer are connected to each other through through holes provided in the metal layer. As a result, the resin layer and the metal layer are connected to each other. Strongly integrated. The size, number, and position of the through holes provided in the metal layer affect the reliability of the resin-encapsulated semiconductor device. That is, when providing the through holes in the metal layer, the two resin layers and the metal layer are firmly integrated, and the penetration of moisture is suppressed as much as possible. It is necessary to take care that the sealed semiconductor element does not deteriorate.

Here, since the through-holes serve as a water entry path, it is preferable that the through-holes are provided at positions opposed to the active surface of the semiconductor element. For example, the through-holes are provided at positions opposed to the vicinity of four corners of the semiconductor element. Preferably, it is provided. However,
When importance is placed on withstanding high temperatures in the surface mounting step, a through hole may be provided at a position facing the active surface of the semiconductor element. Further, in order to firmly integrate the two resin layers and the metal layer, in addition to the positions corresponding to the vicinity of the four corners of the semiconductor element, each side is positioned at the position corresponding to the vicinity of the four sides of the semiconductor element. It is preferable to provide one or a plurality of through-holes along. The size of the through hole is preferably a round hole having a diameter of 0.5 to 2.0 mm or a square hole having a side of 0.5 to 2.0 mm.
The total area of the through hole is preferably １ ／ or less of the area of the semiconductor element in consideration of both suppressing the penetration of moisture and strengthening the bond between the two resin layers and the metal layer. 10% or less is more preferable.

FIG. 9 shows an example of the arrangement of through holes provided in the metal layer.
This will be described with reference to FIGS. In the metal layer of FIG. 9, four round through-holes 11 are formed at positions facing the vicinity of the four corners of the semiconductor element. In the metal layer of FIG. 10, one round through-hole 11 is formed at a position facing the center of the semiconductor element. In the metal layer of FIG. 11, eight round through holes 11 are formed at positions facing the vicinity of the four corners of the semiconductor element and the vicinity of the center of each side of the semiconductor element. In the metal layer of FIG.
One at a position facing the center of the semiconductor device, four around the semiconductor device, four at positions near the four corners of the semiconductor device,
A total of 29 round holes (round holes) 11 are formed at positions facing each of the sides of the semiconductor element, each of which has five holes along each side. In the metal layer of FIG. 13, a large number of round through holes (round holes) 11 are formed at equal intervals around a position facing the center of the semiconductor element. In the metal layer shown in FIG. 14, one rectangular through hole 11 is provided at a position facing the center of the semiconductor device, and four long holes are provided along each side at a position facing each side of the semiconductor device. Through hole 11
Are formed.

In the present invention, the non-active surface side of the semiconductor element may or may not be sealed. Even when the non-active surface side of the semiconductor element is sealed, the same sealing insulator as that used on the active surface side of the semiconductor element may be used as the sealing insulator, or the sealing without a metal layer may be used. A stopping resin, a normal coating resin, or the like may be used.

Representative examples of a resin-sealed semiconductor device using a sealing insulator according to the present invention are shown in FIGS. In each of the drawings, (a) is a cross-sectional view showing a manufacturing process of a resin-sealed semiconductor device, and (b) is a cross-sectional view showing a state after resin sealing.

FIG. 1 shows a semiconductor device 3 of a wire bonding type. In this example, the semiconductor element 3
Both the active surface side and the non-active surface side are sealed with a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on both surfaces of a metal layer 7.

FIG. 2 shows a semiconductor device 3 of a TAB (tape automated bonding) method. That is, the bonding metal 5 is provided on the semiconductor element 3.
′ Is formed, and the bonding metal 5 ′ is bonded to the lead wire 4 formed on the tape-shaped insulating film 9. In this example, both the active surface side and the non-active surface side of the semiconductor element 3 are sealed with a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on both surfaces of a metal layer 7.

FIG. 3 is a view for encapsulating the semiconductor element 3 of the TAB method. In this example, only the active surface side (and side surface) of the semiconductor element 3 is sealed with a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on both surfaces of a metal layer 7. The non-active surface side of 3 is not sealed.

FIG. 4 shows a method for sealing the semiconductor element 3 of the TAB method. In this example, on both the active surface side and the non-active surface side of the semiconductor element 3, a resin layer 6 made of a sealing resin is provided on one surface (the semiconductor element 3 side) of the metal layer 7 and on the other surface (an outer surface side). It is sealed with a sealing insulator 8 on which a resin layer 10 made of a coating resin is formed.

FIG. 5 is a view for encapsulating the TAB type semiconductor element 3. In this example, the active surface side of the semiconductor element 3 has a resin layer 6 made of a sealing resin on one surface (semiconductor element 3 side) of the metal layer 7 and a resin made of a coating resin on the other surface (outer surface side). Sealing insulator 8 on which layer 10 is formed
It is sealed with. On the non-active surface side of the semiconductor element 3, a sealing insulator 12 in which a resin layer 6 made of a sealing resin is formed on one surface (the semiconductor element 3 side) of the metal layer 7 is used. I have.

FIG. 6 shows a method of sealing the TAB type semiconductor element 3. In this example, the active surface side of the semiconductor element 3 has a resin layer 6 made of a sealing resin on one surface (semiconductor element 3 side) of the metal layer 7 and a resin made of a coating resin on the other surface (outer surface side). Sealing insulator 8 on which layer 10 is formed
It is sealed with. On the non-active surface side of the semiconductor element 3, a sealing insulator 12 in which a resin layer 10 made of a coating resin is formed on one surface (the semiconductor element 3 side) of the metal layer 7 is used.

FIG. 7 shows a state surrounding the side surface of the semiconductor element 3.
This seals the semiconductor element 3 provided with the lead wire 4 via the insulating film 9. In this example, the active surface side of the semiconductor element 3 is connected to one surface of the metal layer 7 (the semiconductor element 3).
This is sealed by a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on one side and a resin layer 10 made of a coating resin is formed on the other surface (outer surface side). The non-active surface side of the semiconductor element 3 is sealed only with the resin layer 6 made of a sealing resin.

FIG. 8 is a view for sealing a semiconductor element 3 bonded on a wiring board 13 having a wiring layer formed on an insulating substrate. In this example, the active surface side of the semiconductor element 3 has a resin layer 6 made of a sealing resin on one surface (semiconductor element 3 side) of the metal layer 7 and a resin layer made of a coating resin on the other surface (outer surface side). Sealing insulator 8 on which 10 is formed
It is sealed with.

[0027]

In the resin-sealed semiconductor device of the present invention, at least the active surface of the semiconductor element is sealed with a sealing insulator in which resin layers are formed on both surfaces of a metal layer having a through hole. The metal layer constituting the sealing insulator can prevent moisture from entering the inside of the package, so that corrosion of aluminum wiring on the semiconductor element can be prevented. Further, since the metal layer is provided with through holes, the metal layer and the resin layers formed on both upper and lower surfaces thereof are firmly integrated. For this reason, even if the package is heated to a high temperature when surface-mounted, the moisture inside the package is reduced, so that even if the package is heated to a high temperature, rapid vaporization and expansion of the moisture can be suppressed, and a strongly integrated metal layer is formed. Since the resin and the resin layer do not peel off, rupture due to package cracks is prevented, and occurrence of defects can be suppressed.

Further, the resin-encapsulated semiconductor device of the present invention
Since the resin sealing is performed using the sealing insulator formed in advance, the following special advantages are obtained by this feature. That is, a resin-sealed semiconductor device sealed with a resin by a conventional transfer molding method cannot perform resin sealing inline. On the other hand, the resin-sealed semiconductor device of the present invention can be resin-sealed using a flat plate or a simple mold, so that the resin sealing can be incorporated in an assembly process and performed inline. Therefore, by utilizing this feature, the resin-encapsulated semiconductor device of the present invention can be manufactured on a continuous and automated manufacturing line.

[0029]

EXAMPLES Examples and comparative examples of the present invention will be described below in detail. (1) Preparation of resin solution Resin solution (A) Cresol novolak type epoxy resin: main component (softening point 86 ° C.) 80 parts by weight Brominated bisphenol A type epoxy resin: flame retardant (softening point 88 ° C.) 20 parts by weight novolak Type phenolic resin: curing agent (softening point: 76 ° C.) 50 parts by weight Triphenylphosphine: catalyst 2 parts by weight Heat gelling liquid silicone: 5 parts by weight for imparting flexibility / adhesiveness MBS rubber powder: 15 parts by weight for flexibility imparting agent Part Spherical silica powder: inorganic filler 120 parts by weight Crushed fused silica powder: inorganic filler 190 parts by weight Antimony trioxide powder: flame retardant auxiliary agent 15 parts by weight Carbon powder: pigment 3 parts by weight Ethyl cellosolve: solvent 2,000 parts by weight Resin Solution (B) Bismaleimide resin: Main component (softening point 90 ° C.) 80 parts by weight Brominated bismaleimide resin: Difficult Burning agent (softening point 96 ° C) 20 parts by weight Novolak type phenolic resin: curing agent (softening point 76 ° C) 50 parts by weight Triphenylphosphine: 1 part by weight of catalyst Benzoyl peroxide: 1 part by weight of heat-curing liquid silicone : Flexibility imparting / adhesive imparting agent 5 parts by weight MBS rubber powder: Flexibility imparting agent 15 parts by weight Spherical silica powder: 120 parts by weight inorganic filler Fragmented fused silica powder: 190 parts by weight inorganic filler Antimony trioxide powder: difficult Flame aid 15 parts by weight Carbon powder: Pigment 3 parts by weight Ethyl cellosolve: Solvent 2,000 parts by weight Preparation of resin solution (C) Cresol novolak type epoxy resin: Main agent (softening point 86 ° C) 80 parts by weight Brominated bisphenol A type epoxy resin : Flame retardant (softening point 88 ° C) 20 parts by weight Novolak type phenol resin: Curing agent (softening point 76) C) 50 parts by weight Triphenylphosphine: Catalyst 2 parts by weight Heat gelling type liquid silicone: Flexibility / adhesion imparting agent 5 parts by weight MBS rubber powder: Flexibility imparting agent 15 parts by weight Antimony trioxide powder: Flame retardant aid 15 parts by weight Carbon powder: pigment 3 parts by weight Ethyl cellosolve: solvent 1000 parts by weight Preparation of resin solution (D) Bismaleimide resin: main agent (softening point 90 ° C.) 80 parts by weight Brominated bismaleimide resin: flame retardant (softening) 20 parts by weight Novolak-type phenolic resin: curing agent (softening point: 76 ° C.) 50 parts by weight triphenylphosphine: 1 part by weight catalyst Benzoyl peroxide: 1 part by weight catalyst Gelled liquid silicone: flexibility / Adhesion-imparting agent 5 parts by weight MBS rubber powder: Flexibility-imparting agent 15 parts by weight Antimony trioxide powder: Flame retardant auxiliary agent 15 layers Part carbon powder: pigment 3 parts by weight of ethyl cellosolve: solvent 1000 parts by weight

The above components are kneaded by a ball mill,
It heated as needed and prepared each resin solution. Since the resin solutions (A) and (B) contain an inorganic filler, they can be used for a resin layer directly in contact with a semiconductor element and a resin layer constituting an outer surface of a sealing insulator. On the other hand, since the resin solutions (C) and (D) do not contain an inorganic filler and are inferior in reliability, they are not used for the resin layer directly in contact with the semiconductor element and constitute the outer surface of the sealing insulator. Used only for resin layers. (2) Production of Sealing Insulator Sealing Insulator (A) A double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. The resin solution (A) was applied to both surfaces of the copper foil and dried to obtain a sealing insulator (A). Sealing insulator (B) Openings were formed in a 36 μm-thick double-sided blackened copper foil as shown in FIG. 9. The resin solution (B) was applied to both surfaces of the copper foil and dried to obtain a sealing insulator (B). Sealing insulator (C) A double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. The resin solution (A) was applied to both surfaces of the copper foil and dried to obtain a sealing insulator (C). Sealing insulator (D) Openings were formed in a 36 μm thick double-sided blackened copper foil as shown in FIG. A resin solution (A) was applied to both surfaces of the copper foil and dried to obtain a sealing insulator (D). Insulator for sealing (E)

Openings were provided in a 36 μm thick double-sided blackened copper foil as shown in FIG. A resin solution (A) is applied to one surface (semiconductor element side) of the copper foil and dried, and a resin solution (C) is applied to the other surface (outer surface side) and dried. (E) was obtained. Insulator for sealing (F)

Openings were formed in a 36 μm-thick blackened double-sided copper foil as shown in FIG. A resin solution (B) is applied to one surface (semiconductor element side) of the copper foil and dried, and a resin solution (D) is applied to the other surface (outer surface side) and dried. (F) was obtained. Insulating insulator (G)

The resin solution (A) was applied to both sides of a plain woven glass cloth and dried. Also, holes were formed in a 36 μm thick double-sided blackened copper foil as shown in FIG. 9. The resin solution (C) was applied to one surface (outer surface side) of the copper foil and dried. On the uncoated surface (semiconductor element side) of the resin-coated copper foil, a plain-woven glass cloth with the resin
Pressing was performed at a low temperature to obtain a composite-type sealing insulator (G). Sealing insulator (H)

The resin solution (A) was applied to both sides of a plain-woven glass cloth and dried. In addition, a hole was formed in a 36 μm thick double-sided blackened copper foil as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of the copper foil and dried. On the uncoated surface (semiconductor element side) of the resin-coated copper foil, a plain-woven glass cloth with the resin
Pressing was performed at a low temperature to obtain a composite-type sealing insulator (H). Insulator for sealing (I)

The resin solution (A) was applied to both sides of a plain-woven glass cloth and dried. In addition, an opening was formed in a double-sided blackened copper foil having a thickness of 36 μm as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of the copper foil and dried. On the uncoated surface (semiconductor element side) of the resin-coated copper foil, a plain-woven glass cloth with the resin
Pressing was performed at low temperature to obtain a composite-type sealing insulator (I). Insulator for sealing (J)

The resin solution (A) was applied to both sides of a plain-woven glass cloth and dried. In addition, openings were formed in a 36 μm-thick blackened double-sided copper foil as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of the copper foil and dried. On the uncoated surface (semiconductor element side) of the resin-coated copper foil, a plain-woven glass cloth with the resin
Pressing was performed at a low temperature to obtain a composite-type sealing insulator (J). Insulator for sealing (K)

The resin solution (A) was applied to both sides of the plain-woven glass cloth and dried to obtain a sealing insulator (K).
As described above, the sealing insulator (K) has no metal layer. Insulator for sealing (L)

The resin solution (A) was applied to both sides of a plain-woven glass cloth and dried. Also, apertures were formed in a 45 μm-thick aluminum foil as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of the aluminum foil and dried. A plain-woven glass cloth to which the resin was applied was overlaid on the uncoated surface (semiconductor element side) of the aluminum foil to which the resin was applied, and pressed at a low temperature to obtain a composite-type sealing insulator (L). Insulator for sealing (M)

On both sides of the Kevlar cloth, apply the resin solution (A)
And dried. Also, holes were formed in a 36 μm thick double-sided blackened copper foil as shown in FIG. 9. The resin solution (C) was applied to one surface (outer surface side) of the copper foil and dried.
On the uncoated surface (semiconductor element side) of the copper foil coated with resin,
The Kevlar cloth to which the resin was attached was overlaid and pressed at a low temperature to obtain a composite-type sealing insulator (M). Sealing insulator (N) A double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. A resin solution (C) was applied to both surfaces of the copper foil and dried to obtain a sealing insulator (N). Sealing insulator (O)

A hot-melt fluororesin (PFA) sheet containing 50% by weight of fused silica powder was hot-pressed on both sides of the plain-woven glass cloth. In addition, thickness 45μ
A hole was formed in the aluminum foil of m as shown in FIG. A fluororesin (PFA) film was hot-pressed on one surface (outer surface side) of the aluminum foil. A plain-woven glass cloth on which a PFA sheet was adhered was laminated on the unattached surface (semiconductor element side) of the aluminum foil on which the PFA film was adhered, and heated and pressed to obtain a composite-type sealing insulator (O). Sealing insulator (P)

A polyphenylene sulfide (PPS) sheet containing 50% by weight of fused silica powder was hot-pressed on both sides of a plain-woven glass cloth. In addition, thickness 45μ
A hole was formed in the aluminum foil of m as shown in FIG. A polyphenylene sulfide (PPS) film was hot-pressed on one surface (outer surface side) of the aluminum foil. A plain-woven glass cloth to which a PPS sheet was attached was overlaid on the unattached surface (semiconductor element side) of the aluminum foil to which the PPS film was attached, and heated and pressed to obtain a composite-type sealing insulator (P). Insulator for sealing (Q)

A hot-melt type fluororesin (PFA) sheet containing 30% by weight of fused silica powder and 30% by weight of short glass fibers was hot-pressed on both sides of a plain-woven glass cloth. FIG. 9 shows an aluminum foil having a thickness of 45 μm.
An opening was provided as shown in FIG. A fluororesin (PFA) film was hot-pressed on one surface (outer surface side) of the aluminum foil. A plain-woven glass cloth on which a PFA sheet was adhered was laminated on the unattached surface (semiconductor element side) of the aluminum foil on which the PFA film was adhered, and heated and pressed to obtain a composite-type sealing insulator (Q). Insulator for sealing (R)

Polyphenylene sulfide (PPS) containing 40% by weight of fused silica powder and 10% by weight of hardened spherical phenol resin powder on both sides of a plain-woven glass cloth
The sheet was hot pressed. Also, apertures were formed in a 45 μm-thick aluminum foil as shown in FIG. A polyphenylene sulfide (PPS) film was hot-pressed on one surface (outer surface side) of the aluminum foil. PPS
A plain-woven glass cloth to which a PPS sheet was attached was overlaid on the unattached surface (semiconductor element side) of the aluminum foil to which the film was attached, and heated and pressed to obtain a composite-type sealing insulator (R). Insulator for sealing (S)

A resin solution (A) was applied to both sides of a 36 μm thick blackened double-sided copper foil and dried to obtain a sealing insulator (S). Thus, no through hole is provided in the copper foil of the sealing insulator (S). Insulator for sealing (T)

The resin solution (A) was applied to both sides of a plain-woven glass cloth and dried. Further, a resin solution (C) was applied to one surface (outer surface side) of a double-sided blackened copper foil having a thickness of 36 μm and dried. Plain woven glass cloth to which the resin is applied is laminated on the uncoated surface (semiconductor element side) of the copper foil to which the resin is applied, and pressed at a low temperature to form a composite-type sealing insulator (T).
I got Thus, the copper foil of the sealing insulator (T) includes:
No through hole is provided. Insulating insulator (U)

A hot-melt fluororesin (PFA) sheet containing 50% by weight of fused silica powder was hot-pressed on both sides of the plain-woven glass cloth. In addition, thickness 45μ
A fluororesin (PFA) film was hot-pressed on one surface (outer surface side) of the aluminum foil of m. A plain-woven glass cloth on which a PFA sheet is adhered is superimposed on the unattached surface (semiconductor element side) of the aluminum foil on which the PFA film is adhered, and heated and pressed to form a composite-type sealing insulator (U)
I got Thus, the copper foil of the sealing insulator (U) includes:
No through hole is provided. Insulator for sealing (V)

A polyphenylene sulfide (PPS) sheet containing 50% by weight of fused silica powder was hot-pressed on both sides of the plain-woven glass cloth. In addition, thickness 45μ
A polyphenylene sulfide (PPS) film was hot-pressed on one surface (outer surface side) of the aluminum foil of m. A plain-woven glass cloth on which a PPS sheet was adhered was overlaid on the unattached side (semiconductor element side) of the aluminum foil on which the PPS film was adhered, and heated and pressed to obtain a composite-type sealing insulator (V). Thus, no through-hole is provided in the copper foil of the sealing insulator (V). (3) Test element preparation Test element (A)

Die pad size 15.5 mm × 15.5
mm, 4,2 alloy lead frame with 150 μm plate thickness, chip thickness 300 μm, chip area 15.0 mm ×
A semiconductor device having a built-in moisture resistance test circuit with a surface of 15.0 mm and passivated by a polyimide resin and bonded with a bonding wire having a diameter of 25 μm was prepared. Test element (B)

On a TAB tape, a chip thickness of 300 μm,
A chip was prepared by bonding a semiconductor element having a chip area of 15.0 mm × 15.0 mm and having a surface subjected to passivation coating with a polyimide resin and having a built-in moisture resistance test circuit. (4) Production and evaluation of resin-encapsulated semiconductor device of the present invention

In the combinations shown in Tables 1 and 2,
The sealing insulator of (2) was disposed above and below the test element of (3), and the inside of the mold was heated and pressurized while reducing the pressure in the mold in order to prevent voids and separation. .

[0051]

[Table 1]

[0052]

[Table 2]

Next, the resistance of the resin-sealed semiconductor devices of Examples 1 to 20 and Comparative Examples 1 to 6 to high-temperature soldering when mounted on a printed wiring board was examined as follows. First, each resin-encapsulated semiconductor device was heated to a temperature of 85 ° C.
The film was subjected to a moisture absorption treatment under high temperature and high humidity conditions of 85 ° C. and a relative humidity of 85% for 168 hours. After that, assuming a surface mounting process on a substrate 21
VPS (vapor phase reflow) treatment was performed at 5 ° C. × 2 minutes.

Each resin-encapsulated semiconductor device after the VPS treatment was visually inspected for cracks reaching the outside. Next, the resin-encapsulated semiconductor device after the VSP process is placed in saturated steam at a temperature of 127 ° C. and 2.5 atm (pressure cooker), taken out at regular intervals, and examined for disconnection (open) failure of the test element. , A humidity resistance test (PCT) was performed. The results are shown in Tables 3 and 4.

As is evident from Tables 3 and 4, the resin-sealed semiconductor devices of Examples 1 to 20 exhibit superior moisture resistance reliability as compared with Comparative Examples 1 to 6. This is because, in the embodiment, since the moisture is blocked by the metal layer, and the upper and lower resin layers are connected to each other through the opening provided in the metal layer and these are firmly integrated, the resin layer is peeled off during the VPS process. Is to be prevented.

[0056]

[Table 3]

[0057]

[Table 4]

[0058]

As described above in detail, according to the present invention, the invasion of moisture into the package is suppressed, and external cracks and cracks are prevented even after the VPS processing step, which is the most severe step for the resin-encapsulated semiconductor device. Since there is no peeling, it is possible to provide a resin-encapsulated semiconductor device that has high moisture resistance reliability, is easy to manufacture, and can sufficiently cope with the future trend toward larger and thinner semiconductor elements.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view illustrating a manufacturing process of a resin-sealed semiconductor device according to the present invention, and FIG. 1B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

FIG. 2A is a cross-sectional view illustrating a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 2B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

3A is a cross-sectional view illustrating a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 3B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

4A is a cross-sectional view illustrating a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 4B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

5A is a cross-sectional view illustrating a manufacturing process of the resin-encapsulated semiconductor device according to the present invention, and FIG. 5B is a cross-sectional view of the resin-encapsulated semiconductor device after encapsulation.

6A is a cross-sectional view illustrating a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 6B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

7A is a cross-sectional view illustrating a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 7B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

8A is a cross-sectional view illustrating a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 8B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

FIG. 9 is a plan view showing an example of a metal layer provided with an opening used in the present invention.

FIG. 10 is a plan view showing an example of a metal layer provided with an opening used in the present invention.

FIG. 11 is a plan view showing an example of a metal layer provided with openings used in the present invention.

FIG. 12 is a plan view showing an example of a metal layer provided with an opening used in the present invention.

FIG. 13 is a plan view showing an example of a metal layer provided with openings used in the present invention.

FIG. 14 is a plan view showing an example of a metal layer provided with an opening used in the present invention.

15A is a cross-sectional view illustrating a manufacturing process of a conventional resin-sealed semiconductor device, and FIG. 15B is a cross-sectional view of the same resin-sealed semiconductor device after sealing.

[Explanation of symbols]

3, 20: semiconductor element, 6, 10, 14, 16: resin layer, 7, 15: metal layer, 8, 12, 17: sealing insulator, 11: through hole.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinetsu Fujieda 1 Toshiba-cho, Komukai-shi, Kawasaki-shi, Kanagawa Prefecture Inside Toshiba Research Institute, Inc. (72) Inventor Michiya Higashi Toshiba Komukai-shi, Kawasaki-shi, Kanagawa No. 1, Toshiba Research Institute, Inc. (56) References JP-A-60-257153 (JP, A) JP-A-63-308355 (JP, A) JP-A-48-73568 (JP, U) (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21 / 56,23 / 28

Claims (1)

(57) [Claims] A step of forming a sealing insulator including a metal layer having a through hole and resin layers formed on both surfaces of the metal layer; and laminating the sealing insulator and a semiconductor element. placing Te, the semiconductor device by heating and pressurizing the sealing insulator disposed to overlap and a step of resin-sealing, the through holes of the metal layer is an active surface of the semiconductor element Oppose
A method for manufacturing a resin-encapsulated semiconductor device, wherein the semiconductor device is provided at a different position .