JPH05283453A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a resin sealed type semiconductor device which can suppress the occurrence of package cracks in the surface mounting process, etc., is high in moisture resisting reliability, and can easily cope with size enlargement and thickness reduction. CONSTITUTION:In the title semiconductor device, a semiconductor element 3 is sealed with a sealing insulator 8 composed of a perforated metallic layer 7 and resin layers 6 formed on both surfaces of the layer 7. The resin used for the layers 6 constituting the insulator 8 must have a large electric insulation resistance, low hygroscopic property, and high heat resistance, strength, and adhesive property in order to secure the reliability of the resin sealed semiconductor device. In addition, for example, both active and inactive surface sides of the wire-bonding type semiconductor element 3 are sealed with the insulator 8 composed of the metallic layer 7 and sealing resin layers 6 formed on both surfaces of the layer 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device capable of resin-sealing in-line.

[0002]

2. Description of the Related Art A resin-sealed semiconductor device has hitherto been generally manufactured by resin-sealing a semiconductor element by a transfer molding method. This is because, for example, a tablet made of powder of epoxy molding material mainly composed of epoxy resin and inorganic filler is melted by heating, and it is poured into a mold using a transfer molding machine and molded in a high temperature and high pressure state and cured. Is a method of resin-sealing a semiconductor element with the epoxy resin composition.

By the way, the package of the resin-encapsulated semiconductor device has recently become larger and thinner, which makes it difficult to use the above-mentioned transfer molding method. Furthermore, recently, the types of packages have diversified and are shifting from high-mix low-volume production to high-mix low-volume production, and the transfer molding method is basically not suitable for flexible production modes such as high-mix low-volume production. Therefore, a new method to replace the transfer molding method is currently required.

On the other hand, in Japanese Unexamined Patent Publication No. 3-265162, a sealing insulator having a metal layer and resin layers formed on both sides of the metal layer is thermocompression-bonded to a semiconductor element for resin sealing. A technique for manufacturing a resin-sealed semiconductor device is disclosed. FIGS. 15A and 15B are sectional views showing the manufacturing process of this resin-encapsulated semiconductor device and the structure after encapsulation. That is, in such a method, first, as shown in FIG. 15A, the resin layer 14, the metal layer 15, and the resin layer 16 are formed.
The two sealing insulators 17 in which the
4 are arranged so as to face each other, and these sealing insulators 17 are provided.
Between them, a TAB (tape automated bonding) type semiconductor element 20 bonded to the film carrier 19 by the bump 18 is arranged. Next, the resin layer 14 of the two sealing insulators 17 is heated by plate heating or infrared heating to be in a softened and melted state, and the semiconductor element 20 is sandwiched between the two sealing insulators 17 and pressure-bonded. Through such a process, FIG.
As shown in (b), a resin-sealed semiconductor device in which the semiconductor element 20 is sealed in the resin layer 14 and the metal layer 15 and the resin layer 16 are arranged outside thereof is obtained. According to such a method, resin encapsulation can be performed in-line, and even when various types of semiconductor elements 20 are resin-encapsulated, a sealing insulator 17 having a different structure, shape, or the like is used each time.
It is possible to respond flexibly just by supplying, and it is also suitable for making the package large and thin. However, in the resin-sealed semiconductor device as described above,
Since there is an interface between the metal layer 15 and the resin layers 14 and 16 in the sealing insulator 17, there is a problem that peeling easily occurs at this interface.

[0005]

As described above, in the conventional resin-encapsulated semiconductor device, the occurrence of peeling at the interface between the metal layer of the encapsulating insulator and the resin layer has been a problem. In particular, ASIC (Application Specif)
In the case of a surface mount type package represented by a gate array such as an IC) or a standard cell type LSI, when mounting a resin-sealed semiconductor device on a substrate, in a process such as vapor phase reflow, infrared reflow, solder dipping, etc. Exposed to high temperature (215-260 ° C). Therefore, high pressure is applied to the moisture absorbed inside the package to explosively gasify it at the interface between the metal layer and the resin layer, and as a result, the interface between the metal layer and the resin layer peels off and package cracks occur. As a result, the reliability of the resin-encapsulated semiconductor device is reduced.

An object of the present invention is to provide a resin-encapsulated semiconductor device which suppresses the occurrence of package cracks during surface mounting, has high humidity resistance reliability, and can easily cope with an increase in size and thickness. It is in.

[0007]

SUMMARY OF THE INVENTION A resin-encapsulated semiconductor device of the present invention is a semiconductor element which is an encapsulating insulator having a metal layer having a through hole and resin layers formed on both sides of the metal layer. Are sealed.

In the present invention, the resin used for the resin layer constituting the sealing insulator has a large electric insulation resistance and a hygroscopic property in order to ensure the reliability of the obtained resin-sealed semiconductor device. Smallness, high heat resistance, high strength, high adhesiveness, etc. are required. Examples of such resin include polyimide resin, epoxy resin,
Unsaturated polyester resin, phenol resin, maleimide resin, melamine resin, urea resin, diallyl phthalate resin, silicone resin, furan resin, xylene-formaldehyde resin, ketone-formaldehyde resin, aniline resin, alkyd resin, triallyl cyanurate resin, acrolein Thermosetting resins such as resins, triazine-based resins and dicyclopentadiene-based resins may be mentioned. In addition to these, thermoplastic resins and engineering plastics may be used.

In order to adjust the coefficient of thermal expansion of the resin layer and to improve the strength of these resins, various kinds of fibers, cloth,
Alternatively, an inorganic or organic filler may be added. Examples of the fibers include inorganic fibers such as glass fibers and quartz fibers, and organic fibers such as nylon, polyester and phenol. Examples of the cloth include various kinds of woven cloth such as glass cloth, carbon fiber cloth, and polyamide fiber cloth. As the inorganic filler, quartz powder, fused silica powder,
Examples include spherical fused silica, silicon nitride, aluminum nitride, silicon carbide and the like. Examples of the organic filler include phenol resin cured powder and polyimide resin cured powder.

Furthermore, if necessary, these resins may contain
Rubbers such as silicone rubber and MBS rubber, crack resistance improvers such as elastomers, flame retardants such as halogens and antimony trioxide, and the like can be added.

In the present invention, the metal layer may be a film or a plate having a certain strength. The thickness of the metal layer is appropriately set according to the required thickness of the sealing insulator. As the material of the metal layer, iron, nickel, copper,
Gold, silver, aluminum, tin, stainless steel, and lead,
And alloys thereof. At least one through hole is provided in the metal layer.

The sealing insulator according to the present invention has a structure in which a resin layer is formed on both sides of a metal layer having a through hole, that is, a three-layer structure including at least a resin layer, a metal layer and a resin layer. .. Of the two resin layers on the upper and lower surfaces of the metal layer, the resin layer that is in direct contact with the active surface of the semiconductor element needs to have high reliability. Therefore, it is preferable to use a general sealing resin in which an inorganic filler such as fused silica or silicon nitride is added to epoxy resin or polyimide resin. Alternatively, a sealing resin in which an epoxy resin, a polyimide resin, or the like is attached by impregnating a glass cloth with a resin solution may be used. On the other hand, of the two resin layers, the resin layer on the outer surface side that is not in direct contact with the semiconductor element is not particularly limited. That is, the same sealing resin as the resin layer that is in direct contact with the semiconductor element may be used, or a normal coating resin may be used.

For such a sealing insulator, the same sealing resin is applied to both surfaces of the metal layer, and a highly reliable sealing resin is applied to one surface (semiconductor element side) of the metal layer. Apply
It can be produced by a method of applying a normal coating resin on the other surface, a method of attaching a resin to a glass cloth, and then laminating and adhering it with a metal layer.

In the sealing insulator according to the present invention, the two resin layers provided on the upper and lower surfaces of the metal layer are connected to each other through the through holes provided in the metal layer, so that the resin layer and the metal layer are connected to each other. Firmly integrated. The size, number, and position of the through holes provided in the metal layer affect the reliability of the resin-sealed semiconductor device. That is, when the through hole is formed in the metal layer, the two resin layers and the metal layer are firmly integrated with each other, moisture intrusion can be suppressed as much as possible, and the surface mounting step exposed to high temperature is performed. It is necessary to consider so as not to deteriorate the encapsulated semiconductor element.

Here, since the through-hole serves as a passage for moisture to enter, it is considered preferable to dispose the through-hole at a position facing the active surface of the semiconductor element. For example, the through-hole may be positioned near the four corners of the semiconductor element. It is preferable to provide. However,
If importance is attached to high temperature in the surface mounting process, a through hole may be provided at a position facing the active surface of the semiconductor element. Further, in order to firmly integrate the two resin layers and the metal layer, in addition to the positions corresponding to the vicinity of the four corners of the semiconductor element, each side is provided at a position corresponding to the vicinity of the four sides of the semiconductor element. It is preferable to provide one or a plurality of through holes along the above. The size of the through hole is preferably a round hole having a diameter of 0.5 to 2.0 mm or a square hole having a side of 0.5 to 2.0 mm.
The total area of the through-holes is preferably 1/2 or less of the area of the semiconductor element, in consideration of both suppressing the entry of moisture and strengthening the bond between the two resin layers and the metal layer. It is more preferably 10% or less.

An example of the arrangement of through holes provided in the metal layer is shown in FIG.
~ It demonstrates with reference to FIG. In the metal layer of FIG. 9, four round through-holes 11 are formed at positions facing each other in the vicinity of the four corners of the semiconductor element. In the metal layer of FIG. 10, one round hole through hole 11 is formed at a position facing the central portion of the semiconductor element. In the metal layer of FIG. 11, a total of eight through-holes 11 having circular holes are formed at positions facing the vicinity of the four corners of the semiconductor element and the vicinity of the center of each side of the semiconductor element. In the metal layer of FIG. 12,
One at a position facing the central part of the semiconductor element, four at the periphery thereof, four at positions near the four corners of the semiconductor element,
Through-holes (round holes) 11 having a total of 29 round holes are formed at a position facing each side in the vicinity of each side of the semiconductor element, five holes along each side. In the metal layer of FIG. 13, a large number of through holes (round holes) 11 having round holes are formed at equal intervals centering on a position facing the central portion of the semiconductor element. In the metal layer of FIG. 14, one through hole 11 of a square hole is provided at a position facing the central portion of the semiconductor element, and four elongated holes are provided along each side at a position facing the vicinity of each side of the semiconductor element. Through hole 11
Are formed.

In the present invention, the non-active surface side of the semiconductor element may or may not be sealed. Even when the non-active surface side of the semiconductor element is sealed, the same sealing insulator used for the active surface side of the semiconductor element may be used as the sealing insulator, or a sealing material without a metal layer may be used. A stopping resin, a usual coating resin or the like may be used.

A typical example of a resin-sealed semiconductor device using the sealing insulator according to the present invention is shown in FIGS. In any of the drawings, (a) is a cross-sectional view showing the manufacturing process of the resin-encapsulated semiconductor device, and (b) is a cross-sectional view showing the state after resin encapsulation.

FIG. 1 illustrates a wire bonding type semiconductor element 3 which is sealed. In this example, the semiconductor element 3
Both the active surface side and the non-active surface side are sealed with a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on both surfaces of the metal layer 7.

FIG. 2 shows a TAB (Tape Automated Bonding) type semiconductor element 3 which is sealed. That is, the bonding metal 5 is formed on the semiconductor element 3.
′ Is formed, and this bonding metal 5 ′ is bonded to the lead wire 4 formed on the tape-shaped insulating film 9. In this example, both the active surface side and the non-active surface side of the semiconductor element 3 are sealed with a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on both surfaces of a metal layer 7.

FIG. 3 shows the sealing of the TAB type semiconductor element 3. In this example, only the active surface side (and the side surface) of the semiconductor element 3 is sealed with a sealing insulator 8 in which a resin layer 6 made of a sealing resin is formed on both surfaces of a metal layer 7, The non-active surface side of 3 is not sealed.

FIG. 4 shows an encapsulation of the TAB semiconductor element 3. In this example, on both the active surface side and the non-active surface side of the semiconductor element 3, a resin layer 6 made of a sealing resin is provided on one surface (semiconductor element 3 side) of the metal layer 7, and on the other surface (outer surface side). It is sealed with a sealing insulator 8 on which a resin layer 10 made of a coating resin is formed.

FIG. 5 shows the sealing of the TAB semiconductor element 3. In this example, the active surface side of the semiconductor element 3 has a resin layer 6 made of a sealing resin on one surface (semiconductor element 3 side) of the metal layer 7 and a resin made of a coating resin on the other surface (outer surface side). Sealing insulator 8 with layer 10 formed
It is sealed with. On the non-active surface side of the semiconductor element 3, a sealing insulator 12 having a resin layer 6 made of a sealing resin formed on one surface of the metal layer 7 (semiconductor element 3 side) is used. There is.

FIG. 6 shows the sealing of the TAB semiconductor element 3. In this example, the active surface side of the semiconductor element 3 has a resin layer 6 made of a sealing resin on one surface (semiconductor element 3 side) of the metal layer 7 and a resin made of a coating resin on the other surface (outer surface side). Sealing insulator 8 with layer 10 formed
It is sealed with. On the non-active surface side of the semiconductor element 3, a sealing insulator 12 in which a resin layer 10 made of a coating resin is formed on one surface of the metal layer 7 (semiconductor element 3 side) is used.

In FIG. 7, the side surface of the semiconductor element 3 is surrounded,
The semiconductor element 3 provided with the lead wire 4 is sealed via an insulating film 9. In this example, the active surface side of the semiconductor element 3 is one surface of the metal layer 7 (semiconductor element 3
It is sealed with a sealing insulator 8 having a resin layer 6 made of a sealing resin on the side) and a resin layer 10 made of a coating resin on the other surface (outer surface side). The non-active surface side of the semiconductor element 3 is sealed only with the resin layer 6 made of a sealing resin.

FIG. 8 shows the sealing of the semiconductor element 3 bonded on the wiring substrate 13 having the wiring layer formed on the insulating substrate. In this example, the active surface side of the semiconductor element 3 has a resin layer 6 made of a sealing resin on one surface (semiconductor element 3 side) of the metal layer 7 and a resin layer made of a coating resin on the other surface (outer surface side). Sealing insulator 8 on which 10 is formed
It is sealed with.

[0027]

In the resin-encapsulated semiconductor device of the present invention, at least the active surface of the semiconductor element is encapsulated by the encapsulating insulator in which the resin layers are formed on both surfaces of the metal layer having the through holes. Since the metal layer forming the sealing insulator can prevent moisture from entering the inside of the package, it is possible to prevent corrosion of the aluminum wiring on the semiconductor element. Further, since the metal layer is provided with the through holes, the metal layer and the resin layers formed on both upper and lower surfaces thereof are firmly integrated. Therefore, even if the package is surface-mounted and heated to a high temperature, the moisture inside the package is reduced. Therefore, even if the package is heated to a high temperature, rapid vaporization and expansion of moisture can be suppressed, and the metal layer is firmly integrated. Since peeling from the resin layer does not occur, rupture due to package cracking can be prevented and defects can be suppressed.

Furthermore, the resin-sealed semiconductor device of the present invention is
Since it is resin-sealed by using a sealing insulator formed in advance, this feature provides the following special advantages. That is, in the resin-sealed semiconductor device resin-sealed by the conventional transfer molding method, resin sealing cannot be performed in-line. On the other hand, since the resin-sealed semiconductor device of the present invention can be resin-sealed using a flat plate or a simple mold, the resin-sealing can be performed in-line by incorporating it in the assembly process. Therefore, by utilizing this feature, the resin-sealed semiconductor device of the present invention can be manufactured in a continuous and automated manufacturing line.

[0029]

EXAMPLES Examples of the present invention and comparative examples will be described in detail below. (1) Preparation of resin solution Resin solution (A) Cresol novolac type epoxy resin: Main agent (softening point 86 ° C) 80 parts by weight Brominated bisphenol A type epoxy resin: Flame retardant (softening point 88 ° C) 20 parts by weight Novolac Type Phenolic resin: Curing agent (softening point 76 ° C.) 50 parts by weight Triphenylphosphine: 2 parts by weight Heat gelling type liquid silicone: Flexibility / adhesion-imparting agent 5 parts by weight MBS rubber powder: Softening agent 15 parts by weight Part Spherical silica powder: Inorganic filler 120 parts by weight Fractured fused silica powder: Inorganic filler 190 parts by weight Antimony trioxide powder: Flame retardant aid 15 parts by weight Carbon powder: Pigment 3 parts by weight Ethyl cellosolve: Solvent 2000 parts by weight Resin Solution (B) Bismaleimide resin: Main agent (softening point 90 ° C.) 80 parts by weight Brominated bismaleimide resin: difficult Combustion agent (softening point 96 ° C) 20 parts by weight Novolac type phenolic resin: curing agent (softening point 76 ° C) 50 parts by weight Triphenylphosphine: catalyst 1 part by weight Benzoyl peroxide: catalyst 1 part by weight Heat-gelling type liquid silicone : Softness-imparting / adhesion-imparting agent 5 parts by weight MBS rubber powder: Softness-imparting agent 15 parts by weight Spherical silica powder: Inorganic filler 120 parts by weight Fractured fused silica powder: Inorganic filler 190 parts by weight Antimony trioxide powder: Difficult Burning aid 15 parts by weight Carbon powder: Pigment 3 parts by weight Ethyl cellosolve: Solvent 2000 parts by weight Preparation of resin solution (C) Cresol novolac type epoxy resin: Main agent (softening point 86 ° C.) 80 parts by weight Brominated bisphenol A type epoxy resin : Flame retardant (softening point 88 ° C) 20 parts by weight Novolac type phenol resin: Curing agent (softening point 76 50 ° C.) 50 parts by weight Triphenylphosphine: 2 parts by weight of catalyst Liquid gelling type liquid silicone: 5 parts by weight of flexibility-imparting agent MBS rubber powder: 15 parts by weight of flexibility-imparting agent Antimony trioxide powder: Flame retardant aid 15 parts by weight Carbon powder: Pigment 3 parts by weight Ethyl cellosolve: Solvent 1000 parts by weight Preparation of resin solution (D) Bismaleimide resin: Main agent (softening point 90 ° C.) 80 parts by weight Brominated bismaleimide resin: Flame retardant (softening agent) Point 96 ° C) 20 parts by weight Novolac type phenolic resin: curing agent (softening point 76 ° C) 50 parts by weight Triphenylphosphine: catalyst 1 part by weight Benzoyl peroxide: catalyst 1 part by weight Heat-gelling type liquid silicone: flexibility / Adhesion-imparting agent 5 parts by weight MBS rubber powder: flexibility-imparting agent 15 parts by weight Antimony trioxide powder: flame-retardant aid 15 parts by weight Part carbon powder: pigment 3 parts by weight of ethyl cellosolve: solvent 1000 parts by weight

The above components were kneaded in a ball mill,
It heated as needed and each resin solution was prepared. Since the resin solutions (A) and (B) contain an inorganic filler, they can be used for both the resin layer that is in direct contact with the semiconductor element and the resin layer that constitutes the outer surface of the sealing insulator. On the other hand, since the resin solutions (C) and (D) do not contain an inorganic filler and are inferior in reliability, they are not used in the resin layer which is in direct contact with the semiconductor element and form the outer surface of the sealing insulator. Used only for resin layers. (2) Preparation of Sealing Insulator Sealing Insulator (A) A 36 μm thick double-sided black copper foil was provided with openings as shown in FIG. 9. The resin solution (A) was applied to both surfaces of this copper foil and dried to obtain a sealing insulator (A). Sealing Insulator (B) A 36 μm thick double-sided blackened copper foil was provided with openings as shown in FIG. The resin solution (B) was applied to both surfaces of this copper foil and dried to obtain a sealing insulator (B). Sealing Insulator (C) A 36 μm thick double-sided blackened copper foil was provided with openings as shown in FIG. The resin solution (A) was applied to both surfaces of this copper foil and dried to obtain a sealing insulator (C). Encapsulating Insulator (D) A 36 μm thick double-sided blackened copper foil was provided with openings as shown in FIG. The resin solution (A) was applied to both surfaces of this copper foil and dried to obtain a sealing insulator (D). Sealing insulator (E)

As shown in FIG. 9, an opening was provided in a double-sided blackened copper foil having a thickness of 36 μm. A resin solution (A) is applied to one surface (semiconductor element side) of this copper foil and dried, and a resin solution (C) is applied to the other surface (outer surface side) and dried to obtain a sealing insulator. (E) was obtained. Sealing insulator (F)

As shown in FIG. 9, openings were formed in a 36 μm thick double-sided black copper foil. A resin solution (B) is applied to one surface (semiconductor element side) of this copper foil and dried, and a resin solution (D) is applied to the other surface (outer surface side) and dried to obtain a sealing insulator. (F) was obtained. Sealing insulator (G)

The resin solution (A) was applied to both sides of the plain weave glass cloth and dried. Further, as shown in FIG. 9, openings were provided in a 36 μm thick double-sided blackened copper foil. The resin solution (C) was applied to one surface (outer surface side) of this copper foil and dried. On the uncoated surface of the copper foil coated with resin (semiconductor element side), stack the plain weave glass cloth with resin attached,
Pressurization was performed at a low temperature to obtain a composite type sealing insulator (G). Sealing insulator (H)

The resin solution (A) was applied to both surfaces of the plain weave glass cloth and dried. Further, the double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of this copper foil and dried. On the uncoated surface of the copper foil coated with resin (semiconductor element side), stack the plain weave glass cloth with resin attached,
Pressurization was carried out at a low temperature to obtain a composite type sealing insulator (H). Sealing insulator (I)

The resin solution (A) was applied to both surfaces of the plain weave glass cloth and dried. Further, the double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of this copper foil and dried. On the uncoated surface of the copper foil coated with resin (semiconductor element side), stack the plain weave glass cloth with resin attached,
Pressurization was performed at a low temperature to obtain a composite type insulating insulator (I). Sealing insulator (J)

The resin solution (A) was applied to both surfaces of the plain weave glass cloth and dried. Further, the double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of this copper foil and dried. On the uncoated surface of the copper foil coated with resin (semiconductor element side), stack the plain weave glass cloth with resin attached,
Pressurization was performed at a low temperature to obtain a composite type sealing insulator (J). Sealing insulator (K)

The resin solution (A) was applied to both sides of the plain weave glass cloth and dried to obtain a sealing insulator (K).
As described above, the sealing insulator (K) is not provided with the metal layer. Sealing insulator (L)

The resin solution (A) was applied to both surfaces of the plain weave glass cloth and dried. Further, the aluminum foil having a thickness of 45 μm was provided with openings as shown in FIG. The resin solution (C) was applied to one surface (outer surface side) of this aluminum foil and dried. A plain weave glass cloth having a resin adhered was laid on the uncoated surface (semiconductor element side) of the resin-coated aluminum foil and pressed at a low temperature to obtain a composite-type sealing insulator (L). Sealing insulator (M)

The resin solution (A) was applied to both sides of the Kevlar cloth.
Was applied and dried. Further, as shown in FIG. 9, openings were provided in a 36 μm thick double-sided blackened copper foil. The resin solution (C) was applied to one surface (outer surface side) of this copper foil and dried.
On the uncoated surface (semiconductor element side) of the copper foil coated with resin,
A resin-attached Kevlar cloth was overlaid and pressed at a low temperature to obtain a composite type insulating insulator (M). Encapsulating Insulator (N) A double-sided blackened copper foil having a thickness of 36 μm was provided with openings as shown in FIG. The resin solution (C) was applied to both surfaces of this copper foil and dried to obtain a sealing insulator (N). Insulator for sealing (O)

A hot-melt type fluororesin (PFA) sheet containing 50% by weight of fused silica powder was hot pressed on both sides of the plain weave glass cloth. Also, the thickness is 45μ
The aluminum foil of m was provided with openings as shown in FIG. A fluororesin (PFA) film was hot-pressed on one surface (outer surface side) of this aluminum foil. A plain weave glass cloth having a PFA sheet adhered was placed on the non-adhered surface (semiconductor element side) of the aluminum foil to which the PFA film was adhered, and heated and pressed to obtain a composite-type sealing insulator (O). Sealing insulator (P)

Polyphenylene sulfide (PPS) sheets containing 50% by weight of fused silica powder were hot pressed on both sides of the plain weave glass cloth. Also, the thickness is 45μ
The aluminum foil of m was provided with openings as shown in FIG. A polyphenylene sulfide (PPS) film was hot pressed onto one surface (outer surface side) of this aluminum foil. A plain weave glass cloth having a PPS sheet adhered was placed on the non-adhered surface (semiconductor element side) of the aluminum foil to which the PPS film was adhered, and heated and pressed to obtain a composite type sealing insulator (P). Sealing insulator (Q)

A hot-melt type fluororesin (PFA) sheet containing 30% by weight of fused silica powder and 30% by weight of glass short fibers was hot-pressed on both sides of a plain weave glass cloth. In addition, when the aluminum foil having a thickness of 45 μm is formed as shown in FIG.
As shown in FIG. A fluororesin (PFA) film was hot-pressed on one surface (outer surface side) of this aluminum foil. A plain weave glass cloth having a PFA sheet adhered was placed on the non-adhered surface (semiconductor element side) of the aluminum foil to which the PFA film was adhered, and heated and pressed to obtain a composite type sealing insulator (Q). Insulator for sealing (R)

Polyphenylene sulfide (PPS) containing 40% by weight of fused silica powder and 10% by weight of spherical phenol resin cured powder on both sides of a plain weave glass cloth.
The sheet was hot pressed. Further, the aluminum foil having a thickness of 45 μm was provided with openings as shown in FIG. A polyphenylene sulfide (PPS) film was hot pressed onto one surface (outer surface side) of this aluminum foil. PPS
A plain weave glass cloth having a PPS sheet adhered was placed on the non-adhered surface (semiconductor element side) of the aluminum foil to which the film had been adhered, and heated and pressed to obtain a composite-type sealing insulator (R). Sealing insulator (S)

The resin solution (A) was applied to both surfaces of a double-sided black copper foil having a thickness of 36 μm and dried to obtain a sealing insulator (S). Thus, the copper foil of the sealing insulator (S) has no through hole. Sealing insulator (T)

The resin solution (A) was applied to both surfaces of the plain weave glass cloth and dried. Further, the resin solution (C) was applied to one surface (outer surface side) of the double-sided black copper foil having a thickness of 36 μm and dried. A plain weave glass cloth with resin attached is placed on the uncoated surface (semiconductor element side) of the resin-coated copper foil and pressed at a low temperature to produce a composite type sealing insulator (T).
Got Thus, the copper foil of the sealing insulator (T) is
No through hole is provided. Sealing insulator (U)

A hot-melt type fluororesin (PFA) sheet containing 50% by weight of fused silica powder was hot pressed on both sides of the plain weave glass cloth. Also, the thickness is 45μ
A fluororesin (PFA) film was hot pressed onto one surface (outer surface side) of the aluminum foil of m. A plain woven glass cloth with a PFA sheet attached is laid on the unattached surface (semiconductor element side) of an aluminum foil with a PFA film attached, and heated and pressed to form a composite-type sealing insulator (U).
Got Thus, the copper foil of the sealing insulator (U) has
No through hole is provided. Sealing insulator (V)

Polyphenylene sulfide (PPS) sheets containing 50% by weight of fused silica powder were hot pressed on both sides of the plain weave glass cloth. Also, the thickness is 45μ
A polyphenylene sulfide (PPS) film was hot pressed onto one surface (outer surface side) of the aluminum foil of m. A plain weave glass cloth having a PPS sheet adhered was placed on the non-adhered side (semiconductor element side) of the aluminum foil to which the PPS film was adhered, and heated and pressed to obtain a composite type sealing insulator (V). Thus, the copper foil of the sealing insulator (V) has no through hole. (3) Preparation of test element Test element (A)

Die pad size 15.5 mm × 15.5
mm, the lead frame made of 4,2 alloy with a plate thickness of 150 μm, the chip thickness of 300 μm, the chip area of 15.0 mm ×
A semiconductor element having a thickness of 15.0 mm, the surface of which was passivation coated with a polyimide resin and having a built-in moisture resistance test circuit was mounted and bonded with a bonding wire having a diameter of 25 μm. Test element (B)

The TAB tape has a chip thickness of 300 μm,
A chip area of 15.0 mm × 15.0 mm, the surface of which was passivation coated with a polyimide resin, and a semiconductor element with a built-in moisture resistance test circuit bonded thereto was prepared. (4) Fabrication and evaluation of the resin-encapsulated semiconductor device of the present invention

With the combinations shown in Table 1 and Table 2,
The sealing insulator of (2) is arranged on the upper and lower parts of the test element of (3), and the resin is sealed by heating and pressurizing while reducing the pressure in the mold to prevent voids and peeling. ..

[0051]

[Table 1]

[0052]

[Table 2]

Next, with respect to the resin-encapsulated semiconductor devices of Examples 1 to 20 and Comparative Examples 1 to 6, the resistance to the high temperature soldering process when mounted on the printed wiring board was examined as follows. First, each resin-sealed semiconductor device is set to a temperature of 85
Moisture absorption treatment was carried out for 168 hours under high temperature and high humidity conditions of temperature of 85 ° C and humidity of 85% RH. After that, 21 assuming a surface mounting process on the substrate
VPS (vapor phase reflow) treatment was performed at 5 ° C. for 2 minutes.

With respect to each resin-sealed semiconductor device after the VPS treatment, the presence or absence of cracks reaching the outside was examined by visual observation. Next, the resin-encapsulated semiconductor device after the VSP treatment is put in saturated steam (pressure cooker) at a temperature of 127 ° C. and 2.5 atm, and taken out at regular intervals to examine the test element for open (open) defects. The humidity resistance reliability test (PCT) was performed according to the above. The results are shown in Tables 3 and 4.

As is clear from Tables 3 and 4, the resin-encapsulated semiconductor devices of Examples 1 to 20 have excellent moisture resistance reliability as compared with Comparative Examples 1 to 6. This is because in the example, the water is blocked by the metal layer, and the upper and lower resin layers are connected to each other through the openings provided in the metal layer to firmly integrate them, so that the resin layer is peeled off during the VPS treatment. Is prevented.

[0056]

[Table 3]

[0057]

[Table 4]

[0058]

As described above in detail, according to the present invention, moisture is prevented from entering the inside of the package, and external cracks or external cracks are generated even after the VPS processing step, which is the most severe step for the resin-sealed semiconductor device. Since there is no peeling, it is possible to provide a resin-sealed semiconductor device which has high moisture resistance reliability, is easy to manufacture, and can sufficiently cope with future trend toward larger and thinner semiconductor elements.

[Brief description of drawings]

1A is a sectional view showing a manufacturing process of a resin-sealed semiconductor device according to the present invention, and FIG. 1B is a sectional view of the resin-sealed semiconductor device after sealing.

2A is a cross-sectional view showing a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 2B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

3A is a cross-sectional view showing a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 3B is a cross-sectional view of the resin-sealed semiconductor device after sealing.

4A is a sectional view showing a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 4B is a sectional view of the resin-sealed semiconductor device after sealing.

5A is a sectional view showing a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 5B is a sectional view of the resin-sealed semiconductor device after sealing.

6A is a sectional view showing a manufacturing process of a resin-sealed semiconductor device according to the present invention, and FIG. 6B is a sectional view of the resin-sealed semiconductor device after sealing.

7A is a sectional view showing a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 7B is a sectional view of the resin-sealed semiconductor device after sealing.

8A is a sectional view showing a manufacturing process of the resin-sealed semiconductor device according to the present invention, and FIG. 8B is a sectional view of the resin-sealed semiconductor device after sealing.

FIG. 9 is a plan view showing an example of a metal layer provided with openings used in the present invention.

FIG. 10 is a plan view showing an example of a metal layer provided with openings used in the present invention.

FIG. 11 is a plan view showing an example of a metal layer provided with openings used in the present invention.

FIG. 12 is a plan view showing an example of a metal layer provided with openings used in the present invention.

FIG. 13 is a plan view showing an example of a metal layer provided with holes used in the present invention.

FIG. 14 is a plan view showing an example of a metal layer provided with openings used in the present invention.

15A is a sectional view showing a manufacturing process of a conventional resin-encapsulated semiconductor device, and FIG. 15B is a sectional view of the same resin-encapsulated semiconductor device after encapsulation.

[Explanation of symbols]

3, 20 ... Semiconductor element, 6, 10, 14, 16 ... Resin layer, 7, 15 ... Metal layer, 8, 12, 17 ... Sealing insulator, 11 ... Through hole.

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shinetsu Fujieda No. 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Inside the Toshiba Research Institute, Inc. (72) Inventor Michiya Higashi Toshiba Town No. 1 Incorporated company Toshiba Research Institute

Claims (1)

[Claims] 1. A resin-sealed type, wherein a semiconductor element is sealed with a sealing insulator having a metal layer having a through hole and a resin layer formed on both surfaces of the metal layer. Semiconductor device.