CN104934382A - Sealing material for base material for semiconductor-related sealing, semiconductor device, and manufacture method thereof - Google Patents

Sealing material for base material for semiconductor-related sealing, semiconductor device, and manufacture method thereof Download PDF

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Publication number
CN104934382A
CN104934382A CN201510122984.5A CN201510122984A CN104934382A CN 104934382 A CN104934382 A CN 104934382A CN 201510122984 A CN201510122984 A CN 201510122984A CN 104934382 A CN104934382 A CN 104934382A
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CN
China
Prior art keywords
base material
resin
sealing
encapsulant
semiconductor
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CN201510122984.5A
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Chinese (zh)
Inventor
中村朋阳
秋叶秀树
塩原利夫
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Publication of CN104934382A publication Critical patent/CN104934382A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate

Abstract

The invention provides a sealing material for base material for semiconductor-related sealing. With the sealing material for base material for semiconductor-related sealing, a semiconductor device with nice appearance and good laser marking performance can be made. According to the invention, the sealing material for base material for semiconductor-related sealing is used for general sealing of an element carrying face of a semiconductor element carrying substrate carrying a semiconductor element or an element forming face of a semiconductor element forming wafer with the formed semiconductor element. The sealing material for base material for semiconductor-related sealing is characterized by comprising a substrate, a sealing resin layer formed by uncured or semi-cured thermocuring resin on one face of the substrate and a surface resin layer formed on the other face of the substrate. The glossiness of the surface resin layer is lower than 60 when the measurement angle is 60 degrees.

Description

The manufacture method of the encapsulant of attached encapsulating semiconductor base material, semiconductor device and semiconductor device
Technical field
The present invention relates to a kind of encapsulant, described encapsulant can be equipped with semiconductor element substrate element mounting face or be formed with the element forming surface of wafer (wafer) of semiconductor element, carry out blanket sealing with wafer scale; Particularly relate to a kind of encapsulant of attached encapsulating semiconductor base material, use this attached encapsulant of encapsulating semiconductor base material and the manufacture method of produced semiconductor device and described semiconductor device.
Background technology
About be equipped with semiconductor element substrate mounting semiconductor element face or be formed with the wafer-level seal of semiconductor element forming surface of wafer of semiconductor element, proposed previously and worked out various mode, such as there is following method: utilize spin-coating method to carry out sealing, utilizing screen painting to carry out sealing (patent documentation 1), or be used in the composite sheet (patent documentation 2 and patent documentation 3) film support being coated with hot melt epoxy resin.
Wherein, as the wafer-level seal method in mounting semiconductor element face of substrate being equipped with semiconductor element, recently, the progressively mass production of following method, described method refers to and the film with double-sided adhesive layer is pasted onto metal, silicon wafer (silicon wafer), or the top of glass substrate etc., or after utilizing the Tu cloth adhesives such as spin-coating method, semiconductor element is arranged and bonds, be mounted on substrate and form mounting semiconductor element face, afterwards, utilize liquid-state epoxy resin or epoxy molding plastic etc., carry out extrusion forming in a heated condition thus seal, thus, semiconductor element mounting surface is sealed (patent documentation 4).And, similarly, as the wafer-level seal method of semiconductor element forming surface of wafer being formed with semiconductor element, recently, following method is mass production gradually also, and described method refers to and utilizes liquid-state epoxy resin or epoxy molding plastic etc., carries out extrusion forming in a heated condition thus seals, thus, semiconductor element forming surface is sealed.
But, in above method, if the minor diameter substrate of the minor diameter wafer of use diameter 200mm (8 inches) left and right or metal etc., then also can carry out sealing and there is not large problem at present, if but when sealing the major diameter substrate being equipped with semiconductor element of more than diameter 300mm (12 inches) or the major diameter wafer that is formed with semiconductor element, then make substrate or wafer produce this large problem of warpage because of the shrinkage stress of the sealing resins such as epoxy resin when there will be sealing and curing.And, when sealing with wafer scale the mounting semiconductor element face of the major diameter substrate being equipped with semiconductor element, can occur to make because of the shrinkage stress of sealing resin when sealing and curing semiconductor element from the such problem of the strippable substrate of metal etc., these problems can hinder the mass production practiced by blanket sealing of semiconductor device greatly.
As the method solving this kind of problem, the method of the encapsulant using attached encapsulating semiconductor base material can be enumerated, in described method, in order to carry out blanket sealing to the element mounting face of the substrate being equipped with semiconductor element, and make the encapsulant of described attached encapsulating semiconductor base material have resin impregnated fiber base material and uncured resin layer, described resin impregnated fiber base material makes impregnation heat-curing resin in fiber base material and makes this heat-curing resin semi-solid preparation or obtain after solidifying, described uncured resin layer is formed (patent documentation 5) by the uncured heat-curing resin be formed on the one side of this resin impregnated fiber base material.
If the encapsulant of this kind of attached encapsulating semiconductor base material, then the shrinkage stress of the uncured resin layer when resin impregnated fiber base material that the coefficient of expansion is very little can suppress sealing and curing.Therefore, when sealing the major diameter substrate of major diameter wafer or metal etc., also the warpage of substrate and semiconductor element can be suppressed from the situation of strippable substrate, and also can carry out blanket sealing to the mounting semiconductor element face of the substrate being equipped with semiconductor element with wafer scale.And the sealing properties such as the thermal endurance after sealing and moisture-proof are excellent, thus become the encapsulant of the very high attached encapsulating semiconductor base material of versatility.
But, employ the semiconductor device of the encapsulant of above-mentioned attached encapsulating semiconductor base material, it shows the face of base material on the surface, therefore, compared with the existing situation utilizing heat-curable epoxy resin etc. to carry out sealing, there is outward appearance and the impaired problem of laser-markability.
[prior art document]
(patent documentation)
Patent documentation 1: Japanese Unexamined Patent Publication 2002-179885 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2009-060146 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2007-001266 publication
Patent documentation 4: Japanese Unexamined Patent Application Publication 2004-504723 publication
Patent documentation 5: Japanese Unexamined Patent Publication 2012-151451 publication
Summary of the invention
The present invention completes in order to the problems referred to above solved in the semiconductor device of the encapsulant employing attached encapsulating semiconductor base material, its object is to the encapsulant providing a kind of attached encapsulating semiconductor base material, it can manufacture outward appearance and the good semiconductor device of laser-markability; And a kind of semiconductor device of encapsulant and the manufacture method of semiconductor device that employ attached encapsulating semiconductor base material are provided.
In order to solve above-mentioned problem, in the present invention, a kind of encapsulant of attached encapsulating semiconductor base material is provided, carry out blanket sealing for forming the element forming surface of wafer to the element mounting face of mounting semiconductor element substrate or the semiconductor element that is formed with semiconductor element that are equipped with semiconductor element, the feature of the encapsulant of described attached encapsulating semiconductor base material is:
The encapsulant of this attached encapsulating semiconductor base material has base material, the sealing resin layer formed by the heat-curing resin of the uncured or semi-solid preparation be formed on the surface of one of them of this base material and the surface resin layer be formed on another surface of aforementioned substrates
When measuring angle 60 °, the glossiness of this surface resin layer is less than 60.
In addition, the glossiness recorded in the present invention refers to the glossiness during mensuration angle 60 ° utilizing the method recorded in JIS Z 8741 " mirror surface luster-assay method " to measure.
If the encapsulant of this kind of attached encapsulating semiconductor base material, then because having surface resin layer, therefore outward appearance and the good semiconductor device of laser-markability can be produced.Further, if when measuring angle 60 °, the glossiness of surface resin layer is less than 60, then can suppress the surface of semiconductor device to be showed this bad order of semiconductor element trace, thus can produce outward appearance and the good semiconductor device of laser-markability.
And, now, preferably, in aforementioned surfaces resin bed, relative to the resinous principle of 100 mass parts in this surface resin layer, the pigment more than inorganic filler containing 100 ~ 1100 mass parts and 1 mass parts.
If the inorganic filler containing described amount and pigment, then can suppress glossiness further, and make outward appearance and laser-markability become good.
And, now, preferably, aforementioned surfaces resin bed formed by curable epoxy resin, curability silicone resin, any one blending together in resin, curability epoxy (methyl) acrylate, curability (methyl) acrylic resin, curability polyimide resin of curability epoxy silicone.And, aforementioned surfaces resin bed preferably black.
If mentioned above, then outward appearance and laser-markability can be positively made to become good.
And now, preferably, aforementioned surfaces resin bed uses liquid resinous mode of printing, spray regime, coating method or film thermo-compressed mode to be formed and utilizes heat or light to be cured the layer of rear gained.
If mentioned above, then easily can form surface resin layer.
And now, preferably, the thickness of aforementioned surfaces resin bed is more than 0.5 μm.
If this kind of thickness, then when utilizing Laser marking to clock, substrate surface can not expose and disfeature, thus can produce the semiconductor device that inhibit warpage.
Further, in the present invention, a kind of semiconductor device is provided, described semiconductor device utilizes after the sealing resin layer of the encapsulant of above-mentioned attached encapsulating semiconductor base material carries out blanket sealing to the element forming surface that the element mounting face of aforesaid semiconductor device mounting board or aforesaid semiconductor element form wafer, carries out cutting and individuation gained.
If this kind of semiconductor device, then outward appearance and laser-markability can be made to become good.
And, now, can mark on the surface of the surface resin layer of the encapsulant of aforementioned attached encapsulating semiconductor base material.
Like this, the encapsulant of the attached encapsulating semiconductor base material of the application of the invention, can become the semiconductor device that a kind of outward appearance with required mark is good.
Further, in the present invention, provide a kind of manufacture method of semiconductor device, it is the method manufacturing semiconductor device, and it comprises the steps:
Coating step, it utilizes the sealing resin layer of the encapsulant of aforesaid attached encapsulating semiconductor base material, and the element mounting face of coating aforesaid semiconductor device mounting board or aforesaid semiconductor element form the element forming surface of wafer;
Sealing step, it is by heating aforementioned seal resin bed and making it solidify, and carries out blanket sealing to aforementioned components mounting surface or aforementioned components forming surface; And,
Cutting step, it cuts by forming wafer to the aforesaid semiconductor device mounting board after sealing or aforesaid semiconductor element, and produces the semiconductor device of individuation.
If this kind of manufacture method, then can produce outward appearance and the good semiconductor device of laser-markability.
And, preferably, after aforementioned seal step and before being aforementioned cutting step, there is the markers step utilizing Laser marking to remember on the surface of aforementioned surfaces resin bed.
By carrying out markers step like this, the semiconductor device that the outward appearance with required mark is good can be produced.
As described above, the encapsulant of attached encapsulating semiconductor base material of the present invention, there is base material, the sealing resin layer formed by the heat-curing resin of the uncured or semi-solid preparation be formed on the surface of one of them of base material, and the surface resin layer be formed on another surface of base material, therefore, when can suppress to manufacture semiconductor device, the warpage of substrate and semiconductor element are from the situation of strippable substrate, and blanket sealing can be carried out to element mounting face or element forming surface, and by making the glossiness of surface resin layer lower, can suppress to show this bad order of semiconductor element trace on the surface of semiconductor device, thus outward appearance and the good semiconductor device of laser-markability can be produced.
Accompanying drawing explanation
Fig. 1 is the summary sectional view of an example of the encapsulant representing attached encapsulating semiconductor base material of the present invention.
Fig. 2 represents to use the encapsulant of attached encapsulating semiconductor base material of the present invention to carry out blanket sealing to semiconductor element mounted board and the summary sectional view of an example of mounting semiconductor element substrate after the sealing that obtains.
Fig. 3 represents the summary sectional view using the attached encapsulant of encapsulating semiconductor base material of the present invention and an example of produced semiconductor device.
Embodiment
As described above, the present inventor's concentrated research repeatedly in order to the problem of the outward appearance or laser-markability difference that solve the semiconductor device of the encapsulant employing attached encapsulating semiconductor base material.Result, expect following viewpoint and complete the present invention: on the face of the side of outside, forming surface resin layer in the exposing of encapsulant of attached encapsulating semiconductor base material, the glossiness of this surface resin layer is made to be less than 60 when measuring angle 60 ° further, thus, outward appearance and laser-markability can be made to become good.
Namely, the present invention is a kind of encapsulant of attached encapsulating semiconductor base material, blanket sealing is carried out for forming the element forming surface of wafer to the element mounting face of mounting semiconductor element substrate or the semiconductor element that is formed with semiconductor element that are equipped with semiconductor element
The encapsulant of this attached encapsulating semiconductor base material has base material, the sealing resin layer formed by the heat-curing resin of the uncured or semi-solid preparation be formed on the surface of one of them of this base material and the surface resin layer be formed on another surface of aforementioned substrates
When measuring angle 60 °, the glossiness of this surface resin layer is less than 60.
Below, the manufacture method for the encapsulant of attached encapsulating semiconductor base material of the present invention, semiconductor device and semiconductor device is described in detail, but the present invention is not limited to following explanation.
[encapsulant of attached encapsulating semiconductor base material]
Fig. 1 is the summary sectional view of an example of the encapsulant representing attached encapsulating semiconductor base material of the present invention.
As shown in Figure 1, the encapsulant 1 of attached encapsulating semiconductor base material of the present invention, primarily of: base material 3, the sealing resin layer 4 formed by the heat-curing resin that is uncured or semi-solid preparation on the surface of one of them being formed at base material 3 and the surface resin layer 2 be formed on another surface of base material 3 formed.
(surface resin layer)
Form the surface resin layer 2 of the encapsulant of attached encapsulating semiconductor base material of the present invention, its glossiness is less than 60 when measuring angle 60 °, preferably less than 40, more preferably less than 30.If glossiness is more than 60, then can shows semiconductor element trace on the surface of semiconductor device and cause bad order.
As the invention of resin used in the surface of the resin layer 2, can list the curing of epoxy resin, curing silicone resin, curing epoxy, silicone composite resin, curing epoxy (meth) acrylate, curing (meth) acrylic acid resin, polyimide resin curing, but not limited to these.
The glossiness of surface resin layer 2 is less than 60 when measuring angle 60 °, such as, the allotment amount of the kind of the resin used by adjustment, the particle diameter of inorganic filler described later, inorganic filler, pigment, can make glossiness be less than 60 when measuring angle 60 °.
< epoxy resin >
In the present invention, there is no particular restriction for the epoxy resin used in surface resin layer 2, can enumerate such as: bisphenol A type epoxy resin, bisphenol f type epoxy resin, 3,3 ', 5,5 '-tetramethyl-4,4 '-united phenol-type epoxy resin or 4, the united phenol-type epoxy resins such as 4 '-united phenol-type epoxy resin; Phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolac type epoxy resin, naphthalenediol type epoxy resin, triphenol methylmethane type epoxy resin, four phenolic group ethane type epoxy resin; And the epoxy resin, alicyclic epoxy resin etc. of gained is at room temperature in a liquid state or solid-state known epoxy resin after making the aromatic rings hydrogenation of phenol dicyclopentadiene novolac type epoxy resin.And, optionally, can according to object and with a certain amount of described beyond epoxy resin.
In the surface resin layer 2 formed by epoxy resin, the curing agent of epoxy resin can be comprised.As this kind of curing agent, phenol resol resins, various amine derivative can be used, make a part of open loop of acid anhydrides or anhydride group and the material etc. generating carboxylic acid and obtain.Wherein, the reliability of produced semiconductor device in order to ensure the use attached encapsulant of encapsulating semiconductor base material of the present invention, it is desirable to phenol resol resins.Especially, preferably, become the mode of the mixing ratio of 1:0.8 ~ 1.3 with the ratio of epoxy radicals and phenolic hydroxyl group, epoxy resin is mixed with phenol resol resins.
Further, in order to promote the reaction of epoxy resin and curing agent, as reaction promoter (catalyst), also the metallic compounds etc. such as imdazole derivatives, phosphine-derivatives, amine derivative, organo-aluminum compound can be used.
In the surface resin layer 2 formed by epoxy resin, also can allocate various additive as required and further.Such as, in order to improve the character of resin, suitably allotment can be added according to object: the low stress agent of various thermoplastic resin, thermoplastic elastomer (TPE), organic synthesis rubber, silicone-based etc.; The additives such as paraffin class, halogen trapping agent.
< silicone resin >
In the present invention, as the silicone resin used in surface resin layer 2, there is no particular restriction, can use Thermocurable, ultraviolet (UV) curability silicone resin etc.Especially wish in the resin bed formed by silicone resin containing addition curable silicone resin component.As addition curable silicone resin component, especially preferred is have the organo-silicon compound (such as, containing the diorganopolysiloxanecompositions of thiazolinyl) of unconjugated double bond, (B) organic hydride polysiloxanes and (C) platinum group catalyst as neccessary composition with (A).Below, these (A) ~ (C) composition is described.
(A) composition: the organo-silicon compound with unconjugated double bond
There are as (A) organo-silicon compound of unconjugated double bond,
The organopolysiloxanes such as a kind of straight-chain diorganopolysiloxanecompositions can be enumerated, its strand two end is by three organic siloxy end-blockings of fatty race unsaturated group, and the organopolysiloxanes such as described straight-chain diorganopolysiloxanecompositions are represented by following general formula (1): R 11r 12r 13siO-(R 14r 15siO) a-(R 16r 17siO) b-SiR 11r 12r 13
(in formula, R 11represent the monovalence hydroxyl containing unconjugated double bond, R 12~ R 17represent identical or different monovalence hydroxyl respectively, a and b is satisfied 0≤a≤500,0≤b≤250 and the integer of 0≤a+b≤500).
In above-mentioned general formula (1), R 11be the monovalence hydroxyl containing unconjugated double bond, and the described monovalence hydroxyl containing unconjugated double bond have with preferably carbon number 2 ~ 8, the especially preferred aliphat unsaturated bond that be the thiazolinyl of carbon number 2 ~ 6 is representative.
In above-mentioned general formula (1), R 12~ R 17identical or different monovalence hydroxyl respectively, can enumerate preferably carbon number 1 ~ 20, especially preferred be the alkyl, thiazolinyl, aryl, aralkyl etc. of carbon number 1 ~ 10.And, wherein, R 14~ R 17monovalence hydroxyl more preferably except aliphat unsaturated bond, the especially preferred alkyl, aryl, aralkyl etc. being thiazolinyl etc. and not there is aliphat unsaturated bond.Further, wherein, R 16, R 17preferably aromatic monovalent hydroxyl, especially preferred is the aryl etc. of the carbon number such as phenyl or tolyl 6 ~ 12.
In above-mentioned general formula (1), a and b is satisfied 0≤a≤500,0≤b≤250 and the integer of 0≤a+b≤500, and a preferably meets 10≤a≤500, and b preferably meets 0≤b≤150, and a+b preferably meets 10≤a+b≤500.
Organopolysiloxane shown in above-mentioned general formula (1) can by such as ring-type diphenylpolysiloxane, the ring-type diorganopolysiloxanecompositions such as ring-type methylphenylpolysiloxane, with the diphenyl tetravinyl disiloxane forming terminal groups, the disiloxane such as divinyl tetraphenyl disiloxane carry out alkaline equilibrium reaction and obtain, now, in the equilibration reaction utilizing base catalyst (especially the highly basic such as KOH), because utilize a small amount of catalyst to be polymerized with irreversible reaction, so only carry out ring-opening polymerisation quantitatively, end-capped rate is also high, therefore, usually, not containing silanol group and chlorine component.
As the organopolysiloxane shown in above-mentioned general formula (1), specifically following type can be enumerated.
(in above-mentioned formula, k, m are satisfied 0≤k≤500,0≤m≤250 and the integer of 0≤k+m≤500, preferably meet 5≤k+m≤250 and the integer of 0≤m/ (k+m)≤0.5)
As (A) composition, except the organopolysiloxane with linear chain structure shown in above-mentioned general formula (1), as required, also can and with the organopolysiloxane of the tridimensional network had containing 3 functional silicone's unit, 4 functional silicone's unit etc.And the organo-silicon compound that (A) has unconjugated double bond can be used alone a kind, also can be mixed with two or more.
(A) composition has the group with unconjugated double bond in the organo-silicon compound of unconjugated double bond (such as, thiazolinyls etc. have the monovalence hydroxyl of the double bond be bonded on Si atom) amount, 0.1 ~ 20 % by mole preferably in all monovalence hydroxyls (being bonded to all monovalence hydroxyls on Si atom), more preferably 0.2 ~ 10 % by mole, especially preferred is 0.2 ~ 5 % by mole.If the amount with the group of unconjugated double bond is more than 0.1 % by mole, then just can obtain good solidfied material when cured, if less than 20 % by mole, then the mechanical property after solidification is good, therefore preferably.
And, (A) organo-silicon compound with unconjugated double bond of composition, preferably there is aromatic monovalent hydroxyl (being bonded to the aromatic monovalent hydroxyl on Si atom), 0 ~ 95 % by mole of the content of aromatic monovalent hydroxyl preferably all monovalence hydroxyls (being bonded to all monovalence hydroxyls on Si atom), more preferably 10 ~ 90 % by mole, especially preferred is 20 ~ 80 % by mole.When containing aromatic monovalent hydroxyl in resin in appropriate amount, tool has the following advantages: the mechanical property after solidification is excellent, and easily manufactures.
(B) composition: organic hydride polysiloxanes
As (B) composition, preferably there is in 1 molecule the organic hydride polysiloxanes that more than 2 are bonded to the hydrogen atom (SiH yl) on silicon atom.If have the organic hydride polysiloxanes that more than 2 are bonded to the hydrogen atom (SiH yl) on silicon atom in 1 molecule, then can be used as crosslinking agent to play a role, and the addition reaction of the group of unconjugated double bond is contained by the SiH base in (B) composition and the vinyl, other thiazolinyls etc. of (A) composition, can solidfied material be formed.
And the organic hydride polysiloxanes of (B) composition preferably has aromatic monovalent hydroxyl.If so for having the organic hydride polysiloxanes of aromatic monovalent hydroxyl, then can improve the compatibility with above-mentioned (A) composition.This kind of organic hydride polysiloxanes can be used alone a kind and also can be mixed with two or more, and such as, can comprise the organic hydride polysiloxanes with aromatic hydroxyl and be used as part or all of (B) composition.
As the organic hydride polysiloxanes of (B) composition, be not limited to this, can enumerate: 1,1,3,3-tetramethyl disiloxane, 1,3,5,7-tetramethyl-ring tetrasiloxane, three (dimethylhydrogensiloxy) methyl-monosilane, three (dimethylhydrogensiloxy) phenyl silane, 1-glycidoxypropyl-1,3,5,7-tetramethyl-ring tetrasiloxane, 1,5-glycidoxypropyl-1,3,5,7-tetramethyl-ring tetrasiloxane, 1-glycidoxypropyl-5-trimethoxy silica-based ethyl-1,3,5,7-tetramethyl-ring tetrasiloxane, two ends are by the methylhydrogenpolysi,oxane of trimethylsiloxane group end-blocking, two ends are by the dimethylsiloxane methylhydrogensiloxacopolymer copolymer of trimethylsiloxane group end-blocking, two ends are by the dimethyl polysiloxane of dimethylhydrogensiloxy end-blocking, two ends are by the dimethylsiloxane methylhydrogensiloxacopolymer copolymer of dimethylhydrogensiloxy end-blocking, two ends are by the methyl hydrogen siloxane diphenylsiloxane copolymer of trimethylsiloxane group end-blocking, two ends are by the methyl hydrogen siloxane diphenyl siloxane dimethylsiloxane copolymer of trimethylsiloxane group end-blocking, trimethoxy silane polymer, by (CH 3) 2hSiO 1/2unit and SiO 4/2the copolymer that unit forms, by (CH 3) 2hSiO 1/2unit, SiO 4/2unit and (C 6h 5) SiO 3/2the copolymer etc. that unit forms.
And, also can use and utilize the unit shown in following structure and the organic hydride polysiloxanes obtained.
And, as (B) organic hydride polysiloxanes, following type can be enumerated.
(B) molecular structure of the organic hydride polysiloxanes of composition can be any one in straight-chain, ring-type, branched, tridimensional network, can use the quantity of the silicon atom in 1 molecule (or with regard to polymer, being the degree of polymerization) preferably more than 2, more preferably 3 ~ 500, especially preferred be the molecular structure of about 4 ~ 300.
(B) the allotment amount of the organic hydride polysiloxanes of composition, there is relative to the thiazolinyl etc. of every 1 (A) composition the group of unconjugated double bond, (B) hydrogen atom (SiH yl) be bonded on silicon atom in composition is 0.7 ~ 3.0, more preferably 1.0 ~ 2.0.
(C) composition: platinum group catalyst
(C) composition uses platinum group catalyst.As (C) platinum group catalyst, such as chloroplatinic acid, alcohol modification chloroplatinic acid can be enumerated, there is the platinum complex etc. of chelate structure.1 kind that can be used alone wherein, also can use two or more combination formed.
(C) the allotment amount of the platinum group catalyst of composition can be and is solidified with effective amount and so-called catalytic amount, usually, relative to gross mass 100 mass parts of (A) composition with (B) composition, preferably carry out mass conversion for 0.1 ~ 500ppm with platinum group metal, especially preferred is the scope of 0.5 ~ 100ppm.
< epoxy silicone blendes together resin >
In the present invention, there is no particular restriction for the resin that blendes together of the epoxy resin used in surface resin layer 2 and silicone resin, can enumerate the resin such as employing aforementioned epoxy resins and aforementioned silicone resin.
< epoxy (methyl) acrylate >
In the present invention, as the epoxy used in surface resin layer 2 (methyl) acrylate, can enumerate such as: by previous known aromatic epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin etc., react the acrylate of gained with (methyl) acrylic acid.There is no particular restriction for these epoxy acrylates, especially preferred is the acrylate of aromatic epoxy resin, and it is by having the polyhydric phenols of at least 1 aromatic proton or reacting (methyl) acrylate of gained as polyglycidyl ether and (methyl) acrylic acid of its alkylen oxide adducts.Such as, can enumerate: the glycidol ether being reacted gained by bisphenol-A or its oxyalkylene (alkylene oxide) addition product and chloropropylene oxide, react (methyl) acrylate of gained with (methyl) acrylic acid; Epoxy-Novolak resin and (methyl) acrylic acid react (methyl) acrylate etc. of gained.
< (methyl) acrylic resin >
In the present invention, there is no particular restriction for (methyl) acrylic resin used in surface resin layer 2, can comprise polymer and the copolymer of (methyl) acrylic acid and/or its various derivative.As (methyl) acrylic acid derivative, can enumerate: (methyl) alkyl acrylates such as (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) butyl acrylate, (methyl) isobutyl acrylate, (methyl) 2-EHA, (methyl) lauryl acrylate; (methyl) hydroxyalkyl acrylates such as (methyl) Hydroxyethyl Acrylate, (methyl) hydroxypropyl acrylate; (methyl) benzyl acrylates etc. are containing (methyl) acrylate of aromatic series base; (methyl) acrylic acid amides such as dimethyl (methyl) acrylic acid amides; Acid imide acrylate TO-1492 (manufacture of East Asia compound probability) etc. are containing (methyl) acrylate of imide; (methyl) glycidyl acrylates etc. are containing (methyl) acrylate of epoxy radicals; Two (methyl) acrylic acid glycol ester, two (methyl) acrylic acid 1, multifunctional (methyl) acrylate such as 4-butanediol ester, two (methyl) acrylic acid 1,6-hexylene glycol ester, three (methyl) acrylic acid trihydroxymethylpropanyl ester, three (methyl) acrylate, pentaerythritol, four (methyl) acrylate, pentaerythritol, six (methyl) acrylic acid dipentaerythritol ester.And above-mentioned copolymer also comprises the copolymer of above-mentioned (methyl) acrylic acid and/or its various derivative and acrylonitrile, styrene, butadiene or propenyl derivatives etc.
< polyimide resin >
In the present invention, there is no particular restriction for the polyimide resin used in surface resin layer 2, as the example of suitable use, can enumerate: first by acid dianhydride and the acid of diamine compound synthesizing polyamides, then carry out the polyimide resin of thermal dehydration ring-closure reaction gained.
As the acid dianhydride used in the synthesis of polyamic acid, can enumerate such as: 3, 3 ', 4, 4 '-diphenyl sulfone tetracarboxylic dianhydride, 3, 3 ', 4, 4 '-biphenyl tetracarboxylic dianhydride, 2, 3 ', 3, 4 '-biphenyl tetracarboxylic dianhydride, 5-(2, 5-dioxidotetrahydro-3-furans)-3-methyl-3-cyclohexene-1, 2-dicarboxylic anhydride, 4-(2, 5-dioxidotetrahydro furans-3-base)-1, 2, 3, 4-oxolane-1, 2-dicarboxylic anhydride, 1, 2, 3, 4-butane tetracarboxylic acid dianhydride, 3, 3 ', 4, 4 '-benzophenone tetracarboxylic dianhydride, 4, the two O-phthalic acid dianhydride of 4 '-hexafluoro propylidene, 1, the two O-phthalic acid dianhydride of 3-tetramethyl disiloxane, 4, the two O-phthalic acid dianhydride of 4 '-oxygen.
As the diamine compound used in the synthesis of polyamic acid, can enumerate such as: 3,3 '-diaminourea-4,4 '-dihydroxybiphenyl, 2,2 '-diaminourea-4,4 '-dihydroxybiphenyl, two (4-amino-3-hydroxyphenyl) propane of 2,2-, two (3-amino-4-hydroxyphenyl) propane of 2,2-, two (3-amino-4-hydroxyphenyl) fluorenes of 9,9-, 2,2 '-di-2-ethylhexylphosphine oxide [6-(amino-3, the 5-dimethyl benzyls of 4-)-4-methyl] phenol, 3,3 '-diaminourea-4,4 '-dihydroxy diphenyl ether, two (3-amino-4-hydroxyphenyl) HFC-236fa etc. of 2,2-has the diamines of phenolic group, 4,4 '-diaminobenzene formailide, 4,4 '-diaminodiphenyl ether, 3,4 '-diaminodiphenyl ether, 4,4 '-diamino diphenyl sulfone, 3,3 '-dimethyl-4,4 '-benzidine, 4,4 '-(to phenylene diisopropylidene) diphenylamines, 4,4 '-(m-phenylene diisopropylidene) diphenylamines, two (4-amino-benzene oxygen) benzene of 1,3-, Isosorbide-5-Nitrae-bis-(4-amino-benzene oxygen) benzene, two (3-amino-benzene oxygen) benzene of 1,3-, two [4-(4-amino-benzene oxygen) phenyl] propane of 2,2-, two [4-(4-amino-benzene oxygen) phenyl] HFC-236fa of 2,2-, two [4-(4-amino-benzene oxygen) phenyl] sulfone, two [4-(3-amino-benzene oxygen) phenyl] sulfone, 4,4 '-bis-(4-amino-benzene oxygen) biphenyl, two (4-aminophenyl) fluorenes of 9,9-etc.
< inorganic filler >
In the present invention, adjustable inorganic filler in surface resin layer 2.As the inorganic filler of allotment, can enumerate: smog matter silicon dioxide (aerosil), precipitated silica, fused silica, crystallinity silicon dioxide etc. are silica-based; Aluminium oxide, silicon nitride, aluminium nitride, alumina silicate, boron nitride, glass fibre, antimonous oxide etc.Average grain diameter or the shape of these inorganic fillers are not particularly limited.
As inorganic filler, the adjustable coupling agent such as silane coupler, titanate coupling agent that utilized in advance carries out gained person after surface treatment.
As this kind of coupling agent, preferably such as: the epoxy functional alkoxy silanes such as γ-glycidoxypropyltrimewasxysilane, γ-glycidoxypropyl diethoxy silane, β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane; The amino functional alkoxy silanes such as N-β (aminoethyl)-gamma-amino phenyltrimethoxysila,e, gamma-amino phenyl triethoxysilane, N-phenyl-gamma-amino phenyltrimethoxysila,e; The Mercaptofunctional alkoxy silanes etc. such as γ mercaptopropyitrimethoxy silane.In addition, there is no particular restriction for the allotment amount of the coupling agent used in surface treatment and surface treatment method.
As the allotment amount of inorganic filler, relative to gross mass 100 mass parts of the resinous principles such as the composition epoxy resin in surface resin layer or silicone resin component, preferably 100 ~ 1100 mass parts, especially preferred is 200 ~ 900 mass parts.If more than 100 mass parts, then glossiness can not be too high, can suppress the surface of semiconductor device to be showed this bad order of semiconductor element trace; If below 1100 mass parts, then laser-markability becomes good.
< pigment >
In the present invention, in surface resin layer 2, can containing the pigment for becoming black.As pigment used herein, the carbon black, furnace black, acetylene black etc. that use in such as existing sealing resin composition can be enumerated, but be not limited to these.
By making surface resin layer 2 become black like this, can make to utilize the encapsulant of attached encapsulating semiconductor base material of the present invention and produced semiconductor device has the good outward appearance identical with the existing semiconductor device utilizing epoxy resin etc. to seal and laser-markability.
As the allotment amount of pigment, relative to gross mass 100 mass parts of the resinous principles such as the composition epoxy resin in surface resin layer or silicone resin component, preferably more than 1 mass parts, especially preferred is more than 3 mass parts.If more than 1 mass parts, then glossiness can not be too high, can suppress the surface of semiconductor device to be showed this bad order of semiconductor element trace, becomes enough black and laser-markability is also good, therefore preferably.
< solvent >
As the resin combination of the formation surface resin layer 2 of the encapsulant of attached encapsulating semiconductor base material of the present invention, also can with add in above-mentioned resin as required the composition solution of gained after solvent state and for the formation of surface resin layer 2.
Now, as the solvent added, be not particularly limited, can enumerate such as: oxolane, 1,4-dioxane, methyl ethyl ketone, cyclopentanone, cyclohexanone, gamma-butyrolacton, 1-METHYLPYRROLIDONE, N-vinylpyrrolidone, N, N-dimethylacetylamide, DMF, dimethyl sulfoxide (DMSO), DMI, toluene, dimethylbenzene etc.
And as the addition of solvent, relative to gross mass 100 mass parts of the resinous principles such as the composition epoxy resin in surface resin layer or silicone resin component, preferably 20 ~ 900 mass parts, especially preferred is 40 ~ 400 mass parts.
The thickness of surface resin layer 2 preferably more than 0.5 μm.More preferably 0.5 μm ~ 500 μm.If more than 0.5 μm, then can lettering brightly when utilizing Laser marking to clock, and substrate surface can be avoided to expose and affect outward appearance.And, can easily form surface resin layer 2.If less than 500 μm, then semiconductor device can be positively suppressed to produce warpage.
(base material)
About the material that can be used as the base material 3 of the encapsulant forming attached encapsulating semiconductor base material of the present invention, there is no particular restriction, can form wafer according to as the mounting semiconductor element substrate of sealed object or semiconductor element and use inorganic substrate, metal substrate or organic resin substrate.Also fibrous organic resin substrate can be used.
Representatively inorganic substrate, has ceramic substrate, glass substrate, silicon wafer etc., representatively metal substrate, has the surperficial copper through insulation processing or aluminium base etc.As organic resin substrate, can enumerate: make in fiber base material containing be soaked with heat-curing resin or filler etc. resin impregnated fiber base material, make the resin impregnated fiber base material of heat-curing resin semi-solid preparation or solidification further or make heat-curing resin etc. be shaped to the resin substrate of substrate shape.Representatively organic resin substrate, can enumerate BT (Bismaleimide Triazine) resin substrate, glass epoxy substrate, FRP (fiber-reinforced plastic) substrate etc.
As the material that can be used as above-mentioned fiber base material, can enumerate such as: the inorfils such as carbon fiber, glass fibre, quartz glass fibre, metallic fiber; The organic fibers such as aromatic polyamide fibre, polyimide fiber, polyamide-imide fiber; There are silicon carbide fibre, titanium carbide fibre, boron fibre, alumina fibre etc. further.Can be used any one according to finished product characteristic.And, as best fiber base material, glass fibre, quartz fibre, carbon fiber etc. can be enumerated.Wherein, the glass fibre that insulating properties is high or quartz glass fibre are preferred fiber base material.
And, as heat-curing resin, there is no particular restriction, can enumerate: BT resin, epoxy resin etc. or be generally used for the hereafter illustrative epoxy resin of sealing of semiconductor element, silicone resin, comprise epoxy resin and silicone resin blend together resin, be cyanate ester resin etc. further.
When using use heat-curable epoxy resin as be impregnated in fiber base material heat-curing resin resin impregnated fiber base material, maybe by when being used as base material containing semi-solid preparation gained person after epoxy resin dipping to make the encapsulant of attached encapsulating semiconductor base material of the present invention, preferably, being formed at the heat-curing resin used in the sealing resin layer on the one side of base material is also epoxy resin.If the heat-curing resin of the heat-curing resin and sealing resin layer that are impregnated in base material is similar heat-curing resin, then when carrying out blanket sealing to the element mounting face of semiconductor element mounted board or the element forming surface of semiconductor element formation wafer, can solidify simultaneously, thus, more firmly sealing function can be realized, therefore preferably.
About the thickness of base material 3, under making to be impregnated in the heat-curing resin semi-solid preparation of fiber base material and arbitrary situation of solidification, be all preferably 20 μm ~ 1mm, more preferably 30 μm ~ 500 μm.If more than 20 μm, then can suppress became thin and be easily out of shape, therefore preferably, and, if below 1mm, then can suppress semiconductor device itself thicker, therefore preferably.
Warpage after the important function of base material 3 is to make the element forming surface forming wafer to the element mounting face of semiconductor element mounted board or semiconductor element to carry out blanket sealing reduces, and strengthens arrangement, the substrate being bonded with more than one semiconductor element or the wafer that is formed with semiconductor element.Therefore, it is desirable to hard and straight base material.
[sealing resin layer]
Forming the sealing resin layer 4 of the encapsulant of attached encapsulating semiconductor base material of the present invention, is be made up of the heat-curing resin layer of the uncured or semi-solid preparation on the one side being formed at base material 3.Above-mentioned sealing resin layer 4 becomes the resin bed for sealing semiconductor element.
The thickness of sealing resin layer 4 preferably more than 20 μm and less than 2000 μm.If more than 20 μm, then be enough to seal the semiconductor element forming surface of the mounting semiconductor element face of the various substrates being equipped with semiconductor element or the various wafers that are formed with semiconductor element, and can suppress to cause fillibility bad because crossing thin, therefore preferably; If less than 2000 μm, then the semiconductor device through sealing can be suppressed to become blocked up, therefore preferably.
There is no particular restriction for sealing resin layer 4, the liquid-state epoxy resin preferably used in common semiconductor element encapsulation or solid epoxy resin, silicone resin or the heat-curing resin layer blending together resin, formed by cyanate ester resin be made up of epoxy resin and silicone resin.Especially, heat-curing resin layer preferably can be understood the epoxy resin of melting, silicone resin and epoxy silicone and blendes together the resin bed of any one in resin, cyanate ester resin by Gu Taiization And containing under lower than the condition of 50 DEG C more than 50 DEG C and under the condition of less than 150 DEG C.
< epoxy resin >
As the epoxy resin used in sealing resin layer 4, there is no particular restriction, can use the type identical with the epoxy resin used in above-mentioned surface resin layer 2.
As the sealing resin layer 4 formed by epoxy resin, consider from this one side of resin bed become semiconductor element seals, preferably reduce the alkali ions such as halide ion and sodium such as chlorine as far as possible.It is desirable that in extraction at 120 DEG C, arbitrary ion is below 10ppm, and the extraction at described 120 DEG C refers to, adds sample 10g and carries out sealing and rest in the baking oven of 120 DEG C and carry out after 20 hours adding extraction heat in ion exchange water 50ml.
< silicone resin >
As the silicone resin used in sealing resin layer 4, there is no particular restriction, can use the type identical with the silicone resin used in above-mentioned surface resin layer 2.
The sealing resin layer 4 formed by silicone resin, considers from this one side of resin bed become semiconductor element seals, preferably reduces the alkali ions such as halide ion and sodium such as chlorine as far as possible.Usually, it is desirable that in extraction at 120 DEG C, arbitrary ion is below 10ppm.
What < was made up of epoxy resin and silicone resin blendes together resin >
Blend together resin as the epoxy resin used in sealing resin layer 4 and silicone resin, there is no particular restriction, can enumerate the resin such as employing aforementioned epoxy resins and aforementioned silicone resin.
By the sealing resin layer 4 blending together resin and formed, from becoming the resin bed that seals semiconductor element, this considers on the one hand, preferably reduces the alkali ions such as halide ion and sodium such as chlorine as far as possible.Usually, it is desirable that in extraction at 120 DEG C, arbitrary ion is below 10ppm.
< cyanate ester resin >
As the cyanate ester resin used in sealing resin layer 4, there is no particular restriction, and can enumerate such as allotment has the resin combination of cyanate esters, phenolic compounds and/or dihydroxy naphthlene.
" cyanate esters "
As the composition of cyanate esters or its oligomer as shown in following general formula (2).
(in formula, R 1and R 2represent the alkyl of hydrogen atom or carbon number 1 ~ 4, R 3represent
In any one, R 4the integer of hydrogen atom or methyl, n=0 ~ 30).
Herein, as cyanate esters, that there are in 1 molecule more than 2 cyanate ester based compounds, specifically, can enumerate such as: two (3, 5-dimethyl-4-cyanatephenyl) methane, two (4-cyanatephenyl) methane, two (3-methyl-4-cyanatephenyl) methane, two (3-ethyl-4-cyanatephenyl) methane, two (4-cyanatephenyl)-1, 1-ethane, two (4-cyanatephenyl)-2, 2-propane, two (4-cyanatephenyl) ether, the cyanate of the dihydric phenol of the multi-aromatic rings such as two (4-cyanatephenyl) thioether, the polycyanate ester of the polyhydric phenols such as phenol novolak type cyanate, cresol novolak type cyanate, phenyl aralkyl-type cyanate, biphenyl aralkyl-type cyanate, naphthalene aralkyl-type cyanate.Above-mentioned cyanate esters can be reacted in the basic conditions by phenols and cyanogen chloride and be obtained.About above-mentioned cyanate esters, can have softening point according to purposes from structure is that the solid matter of 106 DEG C is suitably selected to the type at normal temperatures for liquid this wide range property of material.
If molecular weight is little between cyanate ester based equivalent little i.e. functional group, then can obtain that cure shrinkage is little, the solidfied material of low-thermal-expansion, high Tg.If cyanate ester based equivalent is large, although then Tg slightly reduces, triazine crosslinked distance piece becomes flexibility, can expect low elasticity, high Strengthening and Toughening, low water suction.In cyanate esters, bonding or residual chlorine are suitably below 50ppm, more preferably below 20ppm.If below 50ppm, then when long-time high temperature is deposited, make the chlorine free because of thermal decomposition or oxidized Cu framework or Cu cable, the Ag corrosion of coating of chloride ion, peel off or cause electrically bad possibility little.And the insulating properties of resin also becomes good.
" curing agent "
Usually, as curing agent or the curing catalysts of cyanate esters, slaine, metal complex can be used or there is the phenolic hydroxyl group or primary amine class etc. of reactive hydrogen, in the present invention, be suitable for using phenolic compounds or dihydrofuran compound.
< phenolic compounds >
As the phenolic compounds be shown in the present invention, there is no particular restriction, the type shown in the following general formula of suitable use (3).
(in formula, R 5and R 6represent the alkyl of hydrogen atom or carbon number 1 ~ 4, R 7represent
-CH 2-，
In any one, R 4the integer of hydrogen atom or methyl, p=0 ~ 30).
Herein, as phenolic compounds, the phenol resin of the phenolic hydroxyl group with more than at least 2, bisphenol F type resin, bisphenol A type resin, phenol resol resins, phenol aralkyl type resin, biphenyl aralkyl-type resin, naphthalene aralkyl-type resin can be enumerated in 1 molecule, wherein a kind or and use two or more can be used.
If the little such as hydroxyl equivalent of the phenolic hydroxyl equivalent of phenolic compounds is less than 120, then the reactivity with cyanate ester based is high, even if also can be cured reaction under the low temperature below 120 DEG C.In the case, hydroxyl can be reduced relative to cyanate ester based mol ratio.
Suitable scope is that relatively cyanate ester based 1 mole is 0.05 ~ 0.11 mole.In the case, can obtain that cure shrinkage is few, low-thermal-expansion and the solidfied material of high Tg.
On the other hand, if phenolic hydroxyl equivalent greatly, such as hydroxyl equivalent is more than 175, then can suppress and cyanate ester based reaction, can obtain a kind ofly to have good keeping qualities, the composition of good fluidity.Suitable scope, relative to cyanate ester based 1 mole, is 0.1 ~ 0.4 mole.In the case, Tg can be obtained slightly reduce but the low solidfied material of water absorption rate.In order to obtain solidfied material characteristic and the curability of expection, these phenol resin also can and use two or more.
Dihydroxy naphthlene compound is as shown in following general formula (4).
Herein, as dihydroxy naphthlene, can enumerate; 1,2-dihydroxy naphthlene, 1,3-dihydroxy naphthlene, Isosorbide-5-Nitrae-dihydroxy naphthlene, 1,5-dihydroxy naphthlene, 1,6-dihydroxy naphthlene, 1,7-dihydroxy naphthlene, 2,6-dihydroxy naphthlenes, 2,7-dihydroxy naphthlenes etc.Fusing point be 130 DEG C 1,2-dihydroxy naphthlene, 1,3-dihydroxy naphthlene, 1,6-dihydroxy naphthlene reactivity very high, just can promote cyanate ester based cyclization on a small quantity.Fusing point be more than 200 DEG C 1,5-dihydroxy naphthlene, 2,6-dihydroxy naphthlenes reacting phase to being suppressed.When being used alone these dihydroxy naphthlenes, between functional group, molecular weight is little and be straight structures, therefore can obtain the solidfied material of little, the high Tg of cure shrinkage.
And, by large with hydroxyl equivalent and there is in 1 molecule the phenolic compounds And use of more than 2 hydroxyls, can also curability be adjusted.
Be 10ppm in the extraction under 120 DEG C, 2 atmospheric pressure such as halogens or alkali metal etc. in above-mentioned phenolic compounds and dihydroxy naphthlene, especially it is desirable to below 5ppm.
" inorganic filler "
Adjustable inorganic filler in sealing resin layer 4.As the inorganic filler of allotment, can enumerate such as; Fused silica, crystallinity silicon dioxide etc. are silica-based; Aluminium oxide, silicon nitride, aluminium nitride, alumina silicate, boron nitride, glass fibre, antimonous oxide etc.Average grain diameter or the shape of these inorganic fillers are not particularly limited.
Especially as the inorganic filler being added into the sealing resin layer 4 comprising epoxy resin, in order to the bond strength of reinforcing ring epoxy resins and inorganic filler, also the adjustable coupling agent such as silane coupler, titanate coupling agent that utilizes in advance carries out gained person after surface treatment.
As this kind of coupling agent, preferably use such as: the epoxy functional alkoxy silanes such as γ-glycidoxypropyltrimewasxysilane, γ-glycidoxypropyl diethoxy silane, β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane; The amino functional alkoxy silanes such as N-β (aminoethyl)-gamma-amino phenyltrimethoxysila,e, gamma-amino phenyl triethoxysilane, N-phenyl-gamma-amino phenyltrimethoxysila,e; The Mercaptofunctional alkoxy silanes etc. such as γ mercaptopropyitrimethoxy silane.In addition, about allotment amount and the surface treatment method of the coupling agent used in surface treatment, there is no particular restriction.
About the allotment amount of inorganic filler, relative to gross mass 100 mass parts of the resinous principles such as the composition epoxy resin in sealing resin layer or silicone resin component, preferably 100 ~ 1300 mass parts, especially preferred is 200 ~ 1000 mass parts.If more than 100 mass parts, then can obtain sufficient intensity, if below 1300 mass parts, then can suppress because of mobility that to reduce the fillibility caused bad, as a result, can seal the semiconductor element that the semiconductor element that substrate carries or wafer are formed well.In addition, the content of this inorganic filler preferably form the composition in its entirety of sealing resin layer 4 50 ~ 95 quality %, especially preferred be 60 ~ 90 quality % scope in.
[manufacture method of the encapsulant of attached encapsulating semiconductor base material]
As shown in Figure 1, the encapsulant 1 of attached encapsulating semiconductor base material of the present invention is by as under type manufacture: formed on the surface of one of them of base material 3 by the heat-curing resin of uncured or semi-solid preparation the sealing resin layer 4 that formed, and form surface resin layer 2 on another surface.
Surface resin layer 2 is by such as under type formation: utilize the compressing mode adopted in the thermo-compressed mode of mode of printing, spray regime, coating method, film or existing curable epoxide resin or silicone cure resin etc., base material forms resin bed, utilizes heat or light that above-mentioned resin bed is solidified.
Sealing resin layer 4 is by such as inferior various method formation: on the surface not forming the side of surface resin layer 2 of base material 3, with sheet or the uncured heat-curing resin of membranaceous lamination, and the mode such as vacuum lamination or high-temperature vacuum compacting, hot-rolling is used to form above-mentioned layer; Under decompression or vacuum condition, the modes such as printing or distribution are utilized to be coated with the heat-curing resin such as liquid-state epoxy resin or silicone resin and to heat; Further, compressing uncured heat-curing resin.
The encapsulant of produced attached encapsulating semiconductor base material of the present invention like this has surface resin layer, therefore, after semiconductor element is sealed, the surface of base material is covered by surface resin layer, so the face of base material can not be exposed, the good outward appearance identical with the existing technology utilizing sealing resin to carry out sealing can be obtained.And, by utilizing the surface of surface resin layer covering substrates, the problem of the markup difference when directly utilizing laser etc. to mark to base material can be solved, and by making the glossiness of above-mentioned surface resin layer be less than 60 when measuring angle 60 °, can suppress the surface of semiconductor device to be showed this bad order of semiconductor element trace, therefore, outward appearance can be made better.
And, a kind of semiconductor device is provided in the present invention, described semiconductor device, after the element forming surface element mounting face of semiconductor element mounted board or semiconductor element being formed to wafer when the sealing resin layer of the encapsulant utilizing above-mentioned of the present invention attached encapsulating semiconductor base material carries out blanket sealing, carries out cutting and making its individuation and obtain.
[mounting semiconductor element substrate and semiconductor element form wafer]
As utilizing the encapsulant of attached encapsulating semiconductor base material of the present invention to carry out the mounting semiconductor element substrate of the object sealed, there is no particular restriction, can be the inorganic substrate such as organic substrate, silicon wafer or on the element mounting face of metal substrate, be equipped with the substrate of semiconductor element.Mounting semiconductor element substrate comprises lift-launch and is arranged with the semiconductor device array of semiconductor element.
It is wafer wafer being formed with semiconductor element that semiconductor element forms wafer.Herein, as available wafer, such as silicon (Si) wafer, SiC wafer etc. can be enumerated.
In addition, below, about situation about sealing semiconductor element mounted board, be described with reference to Fig. 2, Fig. 3, formed with regard to wafer with regard to semiconductor element, can similarly carry out the sealing of semiconductor element or the manufacture of semiconductor device.
[the mounting semiconductor element substrate after sealing]
Fig. 2 represents the summary sectional view of an example of the mounting semiconductor element substrate after utilizing the encapsulant of attached encapsulating semiconductor base material of the present invention to seal.As shown in Figure 2, in mounting semiconductor element substrate 5 after sealing, utilize the sealing resin layer 4 of the encapsulant 1 of the attached encapsulating semiconductor base material shown in Fig. 1, the coating element mounting face being equipped with the mounting semiconductor element substrate 7 of semiconductor element 6, sealing resin layer 4 heated and makes it solidify, becoming the sealing resin layer 4 ' after solidification thus.
[semiconductor device]
Fig. 3 represents the summary sectional view of an example of semiconductor device of the present invention.As shown in Figure 3, semiconductor device 8 be by the sealing of Fig. 2 after mounting semiconductor element substrate 5 carry out cutting and obtain after making its individuation.
If this kind of semiconductor device, then the face of base material can not be exposed to surface but be covered by surface resin layer, therefore, the good outward appearance that the technology that energy acquisition does not use base material with existing and only utilizes sealing resin to carry out sealing is identical, and directly need not mark on base material, can mark in surface resin layer, so can promote markup.And, by making the glossiness of surface resin layer be less than 60 when measuring angle 60 °, can suppress the surface of semiconductor device to be showed this bad order of semiconductor element trace, so, outward appearance can be made to become better.
And semiconductor device of the present invention is preferably marked on the surface of the surface resin layer of the encapsulant of attached encapsulating semiconductor base material, such as can utilize laser when marking.
[manufacture method of semiconductor device]
And, in the present invention, provide the encapsulant of the attached encapsulating semiconductor base material using the invention described above to manufacture the method for semiconductor device.The manufacture method of semiconductor device of the present invention comprises coating step, sealing step and cutting step.Below, each step is described.
(coating step)
First, utilize the sealing resin layer 4 of the encapsulant 1 of the of the present invention attached encapsulating semiconductor base material shown in Fig. 1, the element mounting face of coating mounting semiconductor element substrate or semiconductor element form the element forming surface of wafer.
(sealing step)
Then, as shown in Figure 2, be solidified to form the sealing resin layer 4 ' after solidification by heating, make it to sealing resin layer 4, thus blanket sealing is carried out to element mounting face or element forming surface.
(cutting step)
Further, cut by forming wafer to the mounting semiconductor element substrate after sealing or semiconductor element, and produce the semiconductor device of the individuation shown in Fig. 3.
And, when marking in surface resin layer, can after sealing step and before being cutting step, carry out markers step, semiconductor element after described markers step refers to mounting semiconductor element substrate after sealing or sealing is formed on the surface of the surface resin layer of wafer, utilizes Laser marking to remember.
As mentioned above, the encapsulant of attached encapsulating semiconductor base material of the present invention has base material, the sealing resin layer formed by the heat-curing resin of the uncured or semi-solid preparation be formed on the surface of one of them of base material, and the surface resin layer be formed on another surface of base material, therefore, when can suppress to manufacture semiconductor device, the warpage of substrate and semiconductor element are from the situation of strippable substrate, and blanket sealing can be carried out to element mounting face or element forming surface, and by forming the low surface resin layer of glossiness, outward appearance and the good semiconductor device of laser-markability can be produced.
[embodiment]
Below, use embodiment and comparative example to be specifically described the present invention, but the present invention is not limited to these embodiments and comparative example.
(embodiment 1)
[making for the formation of the resin combination of surface resin layer]
To comprising cresol novolak type epoxy resin 60 mass parts, phenol resol resins 30 mass parts, spherical silicon dioxide 400 mass parts of average grain diameter 7 μm, catalyst TPP (triphenylphosphine) 0.4 mass parts, black pigment 3 mass parts, silane coupler (KBM403, SHIN-ETSU HANTOTAI chemical industry manufactures) in the composition of 0.5 mass parts, add cyclohexanone 150 mass parts, be uniformly mixed, and utilize 3 rollers to mix equably, obtain the resin combination for the formation of surface resin layer thus.
[preparation of base material]
BT (Bismaleimide Triazine) resin substrate (glass transition temperature 185 DEG C) of preparation thickness 100 μm, 66mm × 232mm is as base material.
[becoming the making of the resin combination of sealing resin layer]
Utilize after spherical silicon dioxide 400 mass parts of cresol novolak type epoxy resin 60 mass parts, phenol resol resins 30 mass parts, average grain diameter 7 μm, catalyst TPP0.2 mass parts, silane coupler (KBM403 SHIN-ETSU HANTOTAI chemical industry manufacture) 0.5 mass parts, black pigment 3 mass parts fully mix by high-speed mixing device, utilize the device that mixes continuously to carry out heating and mix and make its sheet material and make it cool.Make sheet material pulverize and become granular powder, obtain composition epoxy resin thus.
[making of the encapsulant of attached encapsulating semiconductor base material]
The resin combination printing of above-mentioned gained is coated on above-mentioned base material, after carrying out drying in 20 minutes with 120 DEG C, with 180 DEG C, carry out 4 hours regelates (Post RDBMS, post cure), obtain the surface resin layer of having solidified thus.The glossiness of surface resin layer is 25 when measuring angle 60 °.And the thickness of surface resin layer is 15 μm.
Then, the particle powder of above-mentioned composition epoxy resin is made to be evenly dispersed in the opposite side being formed with surface resin layer of base material.The temperature of upper/lower die is set to 80 DEG C, the PET film (stripping film) being coated with fluororesin is located in mold, makes to be decompressed to level of vacuum in mould, carry out compression forming in 3 minutes and become 600 μm to make resin thickness, thus form sealing resin layer.Produce the encapsulant of attached encapsulating semiconductor base material in the above described manner.
[preparation of mounting semiconductor element substrate]
Prepare the substrate of silicon being equipped with 64 thickness 200 μm, 10 × 10mm on the BT substrate of thickness 100 μm, 74 × 240mm.
[sealing of mounting semiconductor element substrate]
Use the encapsulant of the attached encapsulating semiconductor base material made in the above described manner, for above-mentioned mounting semiconductor element substrate, utilize the vacuum lamination apparatus (ニ チ go ー モ ー ト Application society (He Morton company) manufacture) plate temperature being set to 175 DEG C to carry out 5 minutes vacuum compression shaping, be cured sealing thus.After solidification sealing, carry out 4 hours regelates with 180 DEG C, obtain the mounting semiconductor element substrate after sealing thus.
(embodiment 2)
[making for the formation of the resin combination of surface resin layer]
To relative to strand two end be added with as the organo-silicon compound with unconjugated double bond by diorganopolysiloxanecompositions 50 mass parts of thiazolinyl end-blocking, organic hydride polysiloxanes 50 mass parts, as ethynylcyclohexanol 0.2 mass parts of the acetylene alcohols of reaction suppressor, the composition of octanol modified solution 0.1 mass parts of chloroplatinic acid, comprise spherical silicon dioxide 350 mass parts of average grain diameter 5 μm further, the composition of black pigment 5 mass parts, and in wherein adding toluene 150 mass parts, be uniformly mixed, and utilize 3 rollers to mix equably, obtain the resin combination for the formation of surface resin layer thus.
[preparation of base material]
The silicon wafer of preparation thickness 200 μm, diameter 300mm (12 inches) is as base material.
[becoming the making of the resin combination of sealing resin layer]
Make resin combination similarly to Example 1.
[making of the encapsulant of attached encapsulating semiconductor base material]
Make the encapsulant of attached encapsulating semiconductor base material in the same manner as in Example 1.The glossiness of surface resin layer is 18 when measuring angle 60 °.And the thickness of surface resin layer is 10 μm.
[preparation of mounting semiconductor element substrate]
Prepare the silicon wafer of thickness 200 μm, diameter 300mm (12 inches), it arranges and is equipped with semiconductor element i.e. 400 silicons (shape: 5mm × 7mm, thickness 100 μm) of individuation.
[sealing of mounting semiconductor element substrate]
Similarly to Example 1 semiconductor element mounted board is sealed, obtain the mounting semiconductor element substrate after sealing thus.
(embodiment 3)
[making for the formation of the resin combination of surface resin layer]
To comprising acrylic acid modified bisphenol-A 70 mass parts, bisphenol-A 30 mass parts, dicyandiamide 15 mass parts, photopolymerization starts agent, oligomeric (2-hydroxy-2-methyl-1-(4-(1-methyl ethylene) triphenyl) acetone 2 mass parts, spherical silicon dioxide 400 mass parts that average grain diameter is 7 μm, silane coupler (KBM403 SHIN-ETSU HANTOTAI chemical industry manufactures) 0.5 mass parts, in the composition of black pigment 3 mass parts, add cyclohexanone 100 mass parts, be uniformly mixed, and utilize 3 rollers to mix equably, obtain the resin combination for the formation of surface resin layer thus.
[preparation of base material]
The metal substrate of preparation thickness 200 μm, diameter 300mm (12 inches) is as base material.
[becoming the making of the resin combination of sealing resin layer]
Make resin combination similarly to Example 1.
[substrate-side has the making of the encapsulant of the attached encapsulating semiconductor base material of resin bed on the surface]
The resin combination printing of above-mentioned gained is coated on above-mentioned base material, utilizes ultraviolet lamp with illumination 80 ~ 120mW/cm 2, light quantity 2.0 ~ 3.0J/cm 2condition carry out photocuring after, carry out being heating and curing for 2 hours with 140 DEG C, form surface resin layer thus, in addition, make the encapsulant of attached encapsulating semiconductor base material similarly to Example 1.The glossiness of surface resin layer is 13 when measuring angle 60 °.And the thickness of surface resin layer is 70 μm.
[preparation of mounting semiconductor element substrate]
Prepare as infrabasal plate: arrange across the adhesive of at high temperature bonding force reduction on the metal substrate of thickness 200 μm, diameter 300mm (12 inches) and be equipped with semiconductor element i.e. 400 silicons (shape: 5mm × 7mm, thickness 125 μm) of individuation.
[sealing of mounting semiconductor element substrate]
Similarly to Example 1 semiconductor element mounted board is sealed, obtain the mounting semiconductor element substrate after sealing.
(embodiment 4)
[preparation for the formation of the resin combination of surface resin layer]
Prepare the film of polyimides silicone coated X-45-5024B2 (SHIN-ETSU HANTOTAI's chemical industry manufactures) as the resin bed for the formation of surface.
[preparation of base material]
Prepare the BT resin substrate identical with embodiment 1 as base material.
[becoming the making of the resin combination of sealing resin layer]
Make resin combination similarly to Example 1.
[making of the encapsulant of attached encapsulating semiconductor base material]
On above-mentioned base material, with 70 DEG C of vacuum lamination polyimides silicone coated X-45-5024B2, and carry out 4 hours regelates with 175 DEG C, thus, produce the encapsulant of attached encapsulating semiconductor base material.The glossiness of surface resin layer is 38 when measuring angle 60 °.And the thickness of surface resin layer is 100 μm.
[preparation of mounting semiconductor element substrate]
Prepare the substrate identical with embodiment 1.
[sealing of mounting semiconductor element substrate]
Similarly to Example 1 semiconductor element mounted board is sealed, obtain the mounting semiconductor element substrate after sealing.
(embodiment 5)
[making for the formation of the resin combination of surface resin layer]
To in the composition comprising cresol novolak type epoxy resin 60 mass parts, phenol resol resins 30 mass parts, spherical silicon dioxide 90 mass parts of average grain diameter 7 μm, catalyst TPP0.4 mass parts, black pigment 0.9 mass parts, silane coupler (KBM403 SHIN-ETSU HANTOTAI chemical industry manufactures) 0.5 mass parts, add cyclohexanone 150 mass parts, be uniformly mixed, and utilize 3 rollers to mix equably, obtain the resin combination for the formation of surface resin layer thus.
[preparation of base material]
Prepare the BT resin substrate identical with embodiment 1 as base material.
[becoming the making of the resin combination of sealing resin layer]
Make resin combination similarly to Example 1.
[making of the encapsulant of attached encapsulating semiconductor base material]
Make the encapsulant of attached encapsulating semiconductor base material in the same manner as in Example 1.The glossiness of surface resin layer is 60 when measuring angle 60 °.And the thickness of surface resin layer is 15 μm.
[preparation of mounting semiconductor element substrate]
Prepare the substrate identical with embodiment 1.
[sealing of mounting semiconductor element substrate]
Similarly to Example 1 semiconductor element mounted board is sealed, obtain the mounting semiconductor element substrate after sealing.
(comparative example 1)
Do not form surface resin layer, in addition, obtain the mounting semiconductor element substrate after sealing under the same conditions as example 1.
(comparative example 2)
[making for the formation of the resin combination of surface resin layer]
To comprising cresol novolak type epoxy resin 60 mass parts, phenol resol resins 30 mass parts, spherical silicon dioxide 80 mass parts of average grain diameter 7 μm, catalyst TPP0.4 mass parts, black pigment 0.5 mass parts, silane coupler (KBM403, SHIN-ETSU HANTOTAI chemical industry manufactures) in the composition of 0.5 mass parts, add cyclohexanone 150 mass parts, be uniformly mixed, and utilize 3 rollers to mix equably, obtain the resin combination for the formation of surface resin layer thus.
[preparation of base material]
Prepare the BT resin substrate identical with embodiment 1 as base material.
[becoming the making of the resin combination of sealing resin layer]
Make resin combination similarly to Example 1.
[making of the encapsulant of attached encapsulating semiconductor base material]
Make the encapsulant of attached encapsulating semiconductor base material in the same manner as in Example 1.The glossiness of surface resin layer is 95 when measuring angle 60 °.And the thickness of surface resin layer is 15 μm.
[preparation of mounting semiconductor element substrate]
Prepare the substrate identical with embodiment 1.
[sealing of mounting semiconductor element substrate]
Similarly to Example 1 semiconductor element mounted board is sealed, obtain the mounting semiconductor element substrate after sealing.
[glossiness]
About the glossiness of surface resin layer, use Gross meter VG2000 (trade name) (Japanese electric look industry manufactures), measure to measure angle 60 °.
As follows, the characteristic of the semiconductor device before namely cutting the mounting semiconductor element substrate after the sealing of gained in embodiment 1 ~ 5 and comparative example 1 ~ 2 is evaluated.Evaluation result is shown in table 1.
[outward appearance]
Range estimation confirms the surface of mounting semiconductor element substrate after sealing, if without the trace of semiconductor element, surface irregularity, coarse etc., be then considered as good.
[laser-markability]
In the surface resin layer of mounting semiconductor element substrate after sealing, the YAG laser labelling instrument (condition is for applying voltage 2.4kV, pulsewidth 120 μ s) of the bell-type utilizing NEC limited company to manufacture is marked, and evaluates the observability (markup) of lettering.
[warpage]
Use laser three-D analyzer, the displacement of the height in the diagonal of the mounting semiconductor element substrate after sealing is measured, using displacement difference as amount of warpage (mm).
[table 1]
Result according to table 1 represents, in using the semiconductor of the embodiment 1 ~ 5 of the encapsulant of attached encapsulating semiconductor base material of the present invention to put, have the surface resin layer that glossiness is less than 60, therefore outward appearance and laser-markability are all good.On the other hand, in the semiconductor device of comparative example 1, without surface resin layer and the substrate surface of encapsulant expose, therefore bad order, and because of without surface resin layer, so laser-markability is obviously not good yet.And, in the semiconductor device of comparative example 2, because having surface resin layer, so laser-markability is good, but because of the glossiness of surface resin layer high, therefore show the trace of semiconductor element on the surface, cause bad order.And, embodiment 1 ~ 5 and comparative example 1,2 identical, almost without warpage after sealing.
According to known above, the encapsulant of attached encapsulating semiconductor base material of the present invention, when can suppress to manufacture semiconductor device, the warpage of substrate and semiconductor element are from the situation of strippable substrate, and blanket sealing can be carried out to element mounting face or element forming surface, and by forming the lower surface resin layer of glossiness, outward appearance and the good semiconductor device of laser-markability can be produced.
In addition, the present invention is not limited to above-mentioned execution mode.Above-mentioned execution mode, for illustrating, has the formation identical in fact with the technological thought recorded in claim of the present invention and any form playing same action effect all belongs to technical scope of the present invention.

Claims (14)

1. the encapsulant of an attached encapsulating semiconductor base material, it carries out blanket sealing for forming the element forming surface of wafer to the element mounting face of mounting semiconductor element substrate or the semiconductor element that is formed with semiconductor element that are equipped with semiconductor element, it is characterized in that
The encapsulant of this attached encapsulating semiconductor base material has base material, the sealing resin layer formed by the heat-curing resin of the uncured or semi-solid preparation be formed on the surface of one of them of this base material and the surface resin layer be formed on another surface of aforementioned substrates
When measuring angle 60 °, the glossiness of this surface resin layer is less than 60.
2. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 1, wherein, in aforementioned surfaces resin bed, relative to the resinous principle of 100 mass parts in this surface resin layer, the pigment more than inorganic filler containing 100 ~ 1100 mass parts and 1 mass parts.
3. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 1, wherein, aforementioned surfaces resin bed is formed by curable epoxy resin, curability silicone resin, any one blending together in resin, curability epoxy (methyl) acrylate, curability (methyl) acrylic resin, curability polyimide resin of curability epoxy silicone.
4. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 2, wherein, aforementioned surfaces resin bed is formed by curable epoxy resin, curability silicone resin, any one blending together in resin, curability epoxy (methyl) acrylate, curability (methyl) acrylic resin, curability polyimide resin of curability epoxy silicone.
5. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 1, wherein, aforementioned surfaces resin bed is black.
6. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 2, wherein, aforementioned surfaces resin bed is black.
7. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 1, wherein, aforementioned surfaces resin bed uses liquid resinous mode of printing, spray regime, coating method or film thermo-compressed mode to be formed and utilizes heat or light to be cured the layer of rear gained.
8. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 2, wherein, aforementioned surfaces resin bed uses liquid resinous mode of printing, spray regime, coating method or film thermo-compressed mode to be formed and utilizes heat or light to be cured the layer of rear gained.
9. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 1, wherein, the thickness of aforementioned surfaces resin bed is more than 0.5 μm.
10. the encapsulant of attached encapsulating semiconductor base material as claimed in claim 2, wherein, the thickness of aforementioned surfaces resin bed is more than 0.5 μm.
11. 1 kinds of semiconductor devices, it is characterized in that, it is the sealing resin layer of the encapsulant of the attached encapsulating semiconductor base material utilized according to any one of claim 1 to 10, after carrying out blanket sealing to the element mounting face of aforesaid semiconductor device mounting board or the element forming surface of aforesaid semiconductor element formation wafer, carry out cutting and individuation gained.
12. semiconductor devices as claimed in claim 11, wherein, the surface of the surface resin layer of the encapsulant of aforementioned attached encapsulating semiconductor base material are done there is mark.
The manufacture method of 13. 1 kinds of semiconductor devices, it is the method manufacturing semiconductor device, and it is characterized in that, it comprises the steps:
Coating step, this step utilizes the sealing resin layer of the encapsulant of the attached encapsulating semiconductor base material according to any one of claim 1 to 10, and the element mounting face of coating aforesaid semiconductor device mounting board or aforesaid semiconductor element form the element forming surface of wafer;
Sealing step, this step by heating aforementioned seal resin bed and making it solidify, and carries out blanket sealing to aforementioned components mounting surface or aforementioned components forming surface; And,
Cutting step, this step is cut by forming wafer to the aforesaid semiconductor device mounting board after sealing or aforesaid semiconductor element, and produces the semiconductor device of individuation.
The manufacture method of 14. semiconductor devices as claimed in claim 13, wherein, after aforementioned seal step and before being aforementioned cutting step, has the markers step utilizing Laser marking to remember on the surface of aforementioned surfaces resin bed.
CN201510122984.5A 2014-03-19 2015-03-19 Sealing material for base material for semiconductor-related sealing, semiconductor device, and manufacture method thereof Pending CN104934382A (en)

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