TWI781328B - Mask and method of making the same - Google Patents

Abstract

The mask of the present invention includes: a first mask including an opening; a second mask located at the opening of the first mask; and a joining portion joining the first mask and the second mask. The first mask has a first surface, a second surface opposite to the first surface, and a side surface extending from the first surface to the second surface and defining an opening. The second mask includes a third surface located on the first surface side of the first mask and a fourth surface located on the second surface side of the first mask. Also, the second mask has an effective area including the first hole penetrating the second mask, and a peripheral area located at the periphery of the effective area. The junction part has a first part and a second part, and the first part at least includes a side part in contact with a side face of the first cover and a first surface part in contact with a first surface of the first cover, and the second part The portion includes at least a fourth surface portion in contact with the fourth surface of the peripheral region of the second mask.

Description

Mask and manufacturing method thereof

Embodiments of the present invention relate to a mask and its manufacturing method.

In recent years, display devices used in portable devices such as smartphones and tablet PCs (Personal Computers) have been required to have high definition, for example, a pixel density of 400 ppi or higher. In addition, for portable devices, the demand for ultra-high-definition (UHD) is also increasing. In this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

Among the display devices, organic EL (Electroluminescence, electroluminescent) display devices are also attracting attention due to their good responsiveness, low power consumption and high contrast. As a method of forming pixels of an organic EL display device, there is known a method of forming pixels in a desired pattern using a mask formed with through holes arranged in a desired pattern. Specifically, first, a mask is assembled to a substrate for an organic EL display device. Then, the evaporation material including the organic material is attached to the substrate through the through hole of the mask. By performing such an evaporation step, pixels including an organic material can be formed on the substrate in a pattern corresponding to the pattern of the through hole of the mask.

In order to precisely manufacture an organic EL display device with a higher pixel density, it is preferable that the thickness of the mask be smaller. On the other hand, when the thickness of the mask becomes smaller, the rigidity of the mask becomes lower, and the mask is prone to wrinkle and other undulations. When the flatness of the mask is impaired due to undulations such as wrinkles, the position of the vapor deposition material attached to the substrate deviates from the designed position. As a method for solving such a problem, for example, as disclosed in Patent Document 1, a mask body having a plurality of through holes formed therein and a frame having a thickness greater than that of the mask body and joined to the mask body are known. method of combination. In Patent Document 1, as a method of combining the mask main body and the frame body, a method of joining the mask main body and the frame body through a metal layer formed by electroforming is proposed. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2003-68454

It is considered that when an external force is applied to the mask body or the frame, the metal layer will be separated from the mask body or the frame.

An object of embodiments of the present invention is to provide a mask and a manufacturing method thereof that can effectively solve such problems.

A first aspect of the present invention is a mask comprising: a first mask including an opening, and having a first surface, a second surface opposite to the first surface, and an opening from the first surface. Extending to the second surface and dividing the side surface forming the opening; the second mask is located at the opening of the first mask and includes a third surface on the first surface side of the first mask and the fourth surface located on the side of the second surface of the first mask, and has an effective area including the first hole penetrating through the second mask, and a peripheral area located at the periphery of the effective area; and a joint portion, It has a first part and a second part, and the above-mentioned first mask and the above-mentioned second mask are joined together, and the first part includes at least a side part that is in contact with the above-mentioned side surface of the above-mentioned first mask and a part that is connected to the above-mentioned first mask. The portion of the first surface in contact with the first surface of the mask, the second portion includes at least a portion of the fourth surface in contact with the fourth surface of the peripheral region of the second mask.

The second aspect of the present invention is the mask of the first aspect above, wherein the third surface of the second mask and the surface of the first surface portion of the first portion of the joint portion may be located on the same surface. on flat surface.

A third aspect of the present invention is the mask according to the above-mentioned first aspect or the above-mentioned second aspect, wherein the width of the first surface portion of the first portion of the joint portion may be 3 μm or more.

A fourth aspect of the present invention is a mask according to each aspect of the above-mentioned first aspect to the above-mentioned third aspect, wherein the above-mentioned first part of the above-mentioned joint part may further include the above-mentioned first part of the above-mentioned first mask. The part of the second surface where the two surfaces meet.

A fifth aspect of the present invention is the mask of the above-mentioned fourth aspect, wherein the width of the second surface portion of the first portion of the joint portion may be 3 μm or more.

The sixth aspect of the present invention is a mask according to each aspect of the above-mentioned first aspect to the above-mentioned fifth aspect, wherein the peripheral region of the second mask may also include a second hole, and the second hole Recessed from the fourth surface side of the second mask toward the third surface side, the second part of the joint portion further includes a hole portion located on the second surface of the peripheral edge region of the second mask. inside the hole.

The seventh aspect of the present invention is the mask of the sixth aspect above, wherein the second hole in the peripheral region of the second mask can also penetrate from the fourth surface side of the second mask to the above-mentioned 3rd side.

An eighth aspect of the present invention is the mask of the sixth or seventh aspect, wherein the second hole in the peripheral region of the second mask may have a size of 10 μm or more and 200 μm or less.

The ninth aspect of the present invention is the mask of each aspect of the above-mentioned sixth aspect to the above-mentioned eighth aspect, wherein the shape of the second hole in the peripheral region of the second mask can also be along the The fourth surface of the second mask has a circular or rectangular shape when viewed from the normal direction of the fourth surface.

The tenth aspect of the present invention is a mask of each aspect of the above-mentioned first aspect to the above-mentioned ninth aspect, wherein the side surface of the first mask may also have a mask located at the opening and facing the second mask. The protrusion protruding from the side of the cover.

The eleventh aspect of the present invention is a mask according to each aspect of the above-mentioned first aspect to the above-mentioned tenth aspect, wherein the above-mentioned side surface of the first mask may also include a surface having an arithmetic average roughness of 0.12 μm or more. rough surface.

A twelfth aspect of the present invention is a mask according to each aspect of the above-mentioned first aspect to the above-mentioned eleventh aspect, wherein the thickness of the first mask may be not less than 250 μm and not more than 1000 μm.

A thirteenth aspect of the present invention is a mask according to each aspect of the above-mentioned first aspect to the above-mentioned twelfth aspect, wherein the thickness of the second mask can also be 20 μm or less.

A 14th aspect of the present invention is a mask according to each aspect of the above-mentioned first aspect to the above-mentioned 13th aspect, wherein the above-mentioned joining portion may also include a plated layer.

A fifteenth aspect of the present invention is a method of manufacturing a mask, which includes: a first mask preparing step, which is to prepare a first mask, the first mask includes an opening, and has a first surface, located on the above-mentioned The second surface on the opposite side of the first surface, and the side surface extending from the first surface to the second surface and forming the opening; the second mask preparation step is to prepare the second mask, the second mask The mask is located at the opening of the first mask, and includes a third surface located on the first surface side of the first mask and a fourth surface located on the second surface side of the first mask, and An effective area including the first hole penetrating the second mask, and a peripheral area located on the periphery of the effective area; and a junction forming step, which is to form the first part and the second part by plating treatment. The joint part, the first part at least includes a side part that is in contact with the side surface of the first mask and a first surface part that is in contact with the first surface of the first mask, and the second part at least includes The portion of the fourth surface where the above-mentioned fourth surface of the above-mentioned second mask is in contact with each other.

The 16th aspect of the present invention is the manufacturing method of the mask of the 15th aspect above, wherein the step of forming the bonding portion may also include the following step: forming a mask covering the second mask on the substrate provided with the second mask. mask and the photosensitive layer of the above-mentioned substrate; with the above-mentioned second mask positioned at the above-mentioned opening of the above-mentioned first mask, the above-mentioned first mask is arranged on the above-mentioned photosensitive layer on the above-mentioned substrate; the above-mentioned photosensitive layer is placed in the following manner Layer exposure and development, that is, the portion of the photosensitive layer located on the effective area of the second mask is retained, the portion of the photosensitive layer located on the peripheral area of the second mask is removed, and the above Part of the photosensitive layer located between the first mask and the substrate is partially removed; and a plating solution is used to contact the side surface of the first mask and the peripheral area of the second mask, and plate The plating solution is supplied so that the coating solution penetrates into the space between the first mask and the substrate from which the photosensitive layer has been removed, and the bonding portion is formed.

The seventeenth aspect of the present invention is a method for manufacturing a mask according to the above-mentioned fifteenth aspect or the above-mentioned sixteenth aspect, wherein the above-mentioned first mask preparation step may also include the following steps: prepare a metal-containing, and include the first surface and a plate member on a second surface opposite to the first surface; and performing wet etching on the plate member from the first surface side and the second surface side to form the opening in the plate member.

The eighteenth aspect of the present invention is a method for manufacturing a mask of each aspect from the above-mentioned fifteenth aspect to the above-mentioned seventeenth aspect, wherein the above-mentioned first mask preparation step may also include the above-mentioned method for the above-mentioned first mask The step of sand blasting on the side.

The nineteenth aspect of the present invention may also be a mask manufactured by using the mask manufacturing method of each aspect of the above-mentioned fifteenth aspect to the above-mentioned eighteenth aspect.

According to the embodiment of the present invention, it is possible to suppress separation of the bonding portion from the first mask or the second mask.

In this specification and these drawings, terms such as "board", "sheet", and "film" are not distinguished from each other only based on the difference in names unless otherwise specified. For example, the concept of "board" also includes members such as sheets or films. In addition, the term "surface (sheet surface, film surface)" refers to when the target plate-shaped (sheet-shaped, film-shaped) member is observed as a whole and globally, it is different from the target plate-shaped member (sheet-shaped) material-like member, film-like member) with the same plane direction. Also, the normal direction used for a plate-like (sheet-like, film-like) member refers to the normal-line direction with respect to the surface (sheet surface, film surface) of the member. Furthermore, terms such as "parallel" or "orthogonal", or values of length or angle used in this specification to specify shapes or geometrical conditions and their degrees are not limited to strict meanings. Rather, it is interpreted within the scope of the extent to which the same function can be expected.

In this specification and this drawing, when a certain component of a certain component or a certain region is set to be “on (or below)” or “upper (or lower)” of other components or other components or other components, or The case of "above (or below)", unless otherwise specified, is interpreted to include not only the case where a certain composition is directly connected to another composition, but also the case where a certain composition and other constitutions include different constitutions. In addition, unless otherwise specified, descriptions may be made using the words "upper (or upper side or upper side)" or "lower side" (or lower side, lower side), but the up and down directions may be reversed.

In this specification and the drawings, unless otherwise specified, the same symbol or similar symbol may be attached to the same part or a part having the same function, and the repeated description thereof may be omitted. In addition, for convenience of explanation, the dimensional ratios in the drawings may be different from the actual ratios, or a part of the configuration may be omitted from the drawings.

In this specification and this drawing, unless otherwise specified, it can be combined with other embodiment or a modification within the range which does not produce a contradiction. In addition, other embodiment forms, or other embodiment forms and modifications can also be combined within the range that does not cause contradiction. In addition, the modified examples can also be combined within the range that does not cause contradiction.

In the present specification and the drawings, unless otherwise specified, when a plurality of steps are disclosed for a method such as a manufacturing method, other steps not disclosed may be implemented between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within the range that does not create contradictions.

In this specification and the drawings, unless otherwise specified, the numerical range represented by the symbol "~" includes the numerical values before and after the symbol "~". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less".

In this embodiment, an example in which the mask is a vapor deposition mask for patterning a vapor deposition material in a desired pattern on a substrate will be described. The evaporation mask can also be used, for example, to pattern an organic material on a substrate in a desired pattern when manufacturing an organic EL display device. However, the use of the mask of the present invention is not particularly limited, and the mask of the present invention can be used for various purposes. For example, the masks according to the invention can also be used as metal mesh filters or screen printing plates.

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. In addition, the embodiment shown below is an example of the embodiment of this invention, and this invention is not limited to what was interpreted by these embodiment.

First, a vapor deposition device 90 for performing vapor deposition of a vapor deposition material on an object will be described with reference to FIG. 1 . As shown in FIG. 1 , the vapor deposition device 90 may include a vapor deposition source (such as a crucible 94 ), a heater 96 and a mask device 10 inside. In addition, the vapor deposition device 90 further includes an exhaust device for making the inside of the vapor deposition device 90 a vacuum environment. The crucible 94 accommodates a vapor deposition material 98 such as an organic light-emitting material. The heater 96 heats the crucible 94 to evaporate the evaporation material 98 in a vacuum environment. The mask device 10 may also be disposed so as to face the crucible 94 .

Hereinafter, the mask device 10 will be described. As shown in FIG. 1 , the mask device 10 may include at least a mask 12 having a first mask 20 and a plurality of second masks 30 . The mask device 10 may further include a frame 15 supporting the mask 12 . The frame 15 supports the mask 12 in a state stretched in the surface direction so that the mask 12 does not bend. The mask 12 can also be fixed to the frame 15 by welding, for example.

As shown in FIG. 1 , in mask device 10 , mask 12 is arranged in vapor deposition device 90 so as to face a substrate to which vapor deposition material 98 is attached, for example, organic EL substrate 92 . In the following description, the surface of the mask 12 on the organic EL substrate 92 side is referred to as the first surface, and the surface opposite to the first surface, that is, the vapor deposition source side is also referred to as the second surface. For example, in FIG. 1 , symbol 201 denotes the first surface of the first mask 20 , and symbol 202 denotes the second surface of the first mask 20 . In addition, in order to distinguish the surface of the 2nd mask 30 from the 1st surface 201 and the 2nd surface 202 of the 1st mask 20, the name different from a 1st surface and a 2nd surface is given. Specifically, among the surfaces of the second mask 30 , the surface on the vapor deposition source side is called a third surface, and the surface on the opposite side of the third surface, that is, the vapor deposition source side is called a fourth surface.

As shown in FIG. 1 , the mask device 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the mask 12 . By providing the magnet 93 , the mask 12 can be attracted toward the magnet 93 side by magnetic force, so that the mask 12 can be brought into close contact with the organic EL substrate 92 . Thereby, generation of shadows in the vapor deposition step can be suppressed, and the dimensional accuracy or positional accuracy of the vapor deposition material 98 attached to the organic EL substrate 92 can be improved. In addition, the mask 12 may be brought into close contact with the organic EL substrate 92 using an electrostatic chuck utilizing electrostatic force.

As shown in FIG. 1 , the first cover 20 of the cover 12 has: a plate member 21 including a first surface 201 and a second surface 202 on the opposite side of the first surface 201; and a plurality of openings 22, which etc. are formed on the plate member 21 . The plurality of second masks 30 are respectively located at the openings of the first mask 20 when the first mask 20 and the second mask 30 are observed along the normal direction of the second surface 202 of the first mask 20 Section 22. The second mask 30 has a plurality of first holes 32 penetrating through the second mask 30 .

In the vapor deposition device 90 shown in FIG. 1 , the vapor deposition material 98 reaching the mask device 10 after evaporating from the crucible 94 is attached to the first hole 32 of the first mask 20 and the first hole 32 of the second mask 30 through the opening 22 of the first mask 20 and the first hole 32 of the second mask 30. An organic EL substrate 92 . Thereby, the deposition material 98 can be formed into a film on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the openings 22 of the first mask 20 and the positions of the first holes 32 of the second mask 30 .

FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG. 1 . The organic EL display device 100 may also include an organic EL substrate 92 and a vapor deposition layer 99 including a vapor deposition material 98 arranged in a pattern. The plurality of vapor deposition layers 99 included in one organic EL display device 100 is formed by One opening 22 of one mask 20 and a plurality of first holes 32 of one second mask 30 are formed by vapor deposition material deposited on the organic EL substrate 92 .

In addition, in the organic EL display device 100 of FIG. 2 , electrodes and the like for applying a voltage to the evaporated layer 99 are omitted. In addition, other components of the organic EL display device may be further provided in the organic EL display device 100 of FIG. 2 after the vapor deposition step of forming the vapor deposition layer 99 in a pattern on the organic EL substrate 92 . Therefore, the organic EL display device 100 of FIG. 2 can also be called an intermediate body of the organic EL display device.

Furthermore, when it is desired to perform color display using a plurality of colors, each vapor deposition device 90 equipped with a mask device 10 corresponding to each color is prepared, and the organic EL substrate 92 is sequentially loaded into each vapor deposition device 90 . Thereby, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue can be sequentially vapor-deposited on the organic EL substrate 92 .

However, the vapor deposition process may be performed inside the vapor deposition device 90 which is a high-temperature environment. In this case, the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process. At this time, the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 exhibit behaviors of dimensional changes based on their respective coefficients of thermal expansion. In this case, when the thermal expansion coefficients of the first mask 20, the second mask 30, or the frame 15 and the organic EL substrate 92 differ greatly, positional shifts caused by differences in their dimensional changes will occur, and the As a result, the dimensional accuracy or positional accuracy of the vapor deposition material deposited on the organic EL substrate 92 is reduced.

In order to solve such a problem, it is preferable that the thermal expansion coefficients of the first mask 20 , the second mask 30 , and the frame 15 be equal to the thermal expansion coefficient of the organic EL substrate 92 . For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the first mask 20, the second mask 30, and the frame 15. For example, as a material of the plate members constituting the first mask 20 and the second mask 30 , an iron alloy containing nickel in an amount of 30% by mass or more and 54% by mass or less can be used. Specific examples of iron alloys containing nickel include invar materials containing 34% by mass to 38% by mass of nickel, super-invar materials containing cobalt in addition to nickel at 30% by mass to 34% by mass , and a low thermal expansion Fe—Ni-based plating alloy containing 38% by mass to 54% by mass of nickel, and the like.

Furthermore, when the temperature of the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 does not reach a high temperature during the vapor deposition process, it is not necessary to make the first mask 20, the second mask The coefficient of thermal expansion of the cover 30 and the frame 15 is equal to the coefficient of thermal expansion of the organic EL substrate 92 . In this case, as the material constituting the first mask 20 and the second mask 30, a material other than the above-mentioned iron alloy may be used. For example, iron alloys other than the above-mentioned iron alloys containing nickel, such as iron alloys containing chromium, can also be used. As an iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. In addition, alloys other than iron alloys such as nickel or nickel-cobalt alloys can also be used.

Next, the first mask 20 will be described in detail. FIG. 3 is a top view showing the first mask 20 . As shown in FIG. 3 , the plurality of openings 22 of the first mask 20 are arranged along the first direction D1 and the second direction D2. Both the first direction D1 and the second direction D2 are directions parallel to the plane direction of the plate member 21 of the first mask 20 . In this embodiment, the second direction D2 is perpendicular to the first direction D1.

One opening 22 of the first mask 20 corresponds to a display area of one organic EL display device 100 . By providing a plurality of openings 22 in one mask device 10 , vapor deposition on multiple surfaces of the organic EL display device 100 can be realized.

Next, the second mask 30 will be described in detail. FIG. 4 is a plan view showing a plurality of second masks 30 . As shown in FIG. 4 , the plurality of second masks 30 are arranged at intervals corresponding to the plurality of openings 22 of the first mask 20 . One second mask 30 corresponds to a display area of one organic EL display device 100 .

Each second mask 30 includes a metal layer 31 and a plurality of first holes 32 penetrating through the metal layer 31 . The metal layer 31 includes, for example, a plating layer formed by plating. Furthermore, in FIG. 4 , an example in which a plurality of first holes 32 are arranged in the first direction D1 and the second direction D2 similarly to the first mask 20 is shown, but the arrangement direction of the first holes 32 is not particularly limited. . For example, the plurality of first holes 32 may be arranged in a direction inclined with respect to the first direction D1 and the second direction D2.

FIG. 5 is an enlarged plan view of the second mask 30 . 6 is a cross-sectional view of the second mask 30 in FIG. 5 viewed along the line VI-VI. The second mask 30 has an effective area 36 including the above-mentioned plurality of first holes 32 and a peripheral area 37 located on the periphery of the effective area 36 . The outline of the effective area 36 is, for example, as shown in FIG. 5 , which has a substantially quadrangular shape in plan view, and more precisely, has a substantially rectangular shape in plan view. Furthermore, although not shown, the effective region 36 may have contours of various shapes corresponding to the shape of the display region of the organic EL substrate 92 . For example, the contour of the active area 36 may also have a circular shape. The peripheral edge area 37 is an area where a joining portion 40 to be described below for joining the first mask 20 and the second mask 30 is provided.

As shown in FIG. 6 , the second mask 30 includes a third surface 301 and a fourth surface 302 located on the opposite side of the third surface 301 . The third surface 301 is located on the first surface 201 side of the first mask 20 , and the fourth surface 302 is located on the second surface 202 side of the first mask 20 . That is, similarly to the case of the first mask 20, the third surface 301 of the second mask 30 is a surface facing the organic EL substrate 92, and the fourth surface 302 is a surface located on the vapor deposition source side. The aforementioned FIG. 5 shows a plan view of the second mask 30 viewed from the fourth surface 302 side.

As shown in FIG. 5 , the peripheral region 37 of the second mask 30 may also include a plurality of second holes 33 recessed from the fourth surface 302 side of the second mask 30 toward the third surface 301 side. The second hole 33 is a hole through which the joint part 40 described later enters. By entering the joint part 40 into the second hole 33, the contact area between the second mask 30 and the joint part 40 can be increased.

In the example shown in FIG. 6 , the second hole 33 of the peripheral region 37 penetrates from the side of the fourth surface 302 of the second mask 30 to the side of the third surface 301 . However, the second hole 33 may not penetrate to the third surface 301 side as shown in the following modification example.

Next, the shape of the first hole 32 in plan view will be described. The first hole 32 has a shape corresponding to the vapor deposition layer 99 formed on the organic EL substrate 92 in plan view. For example, as shown in FIG. 5 , the shape of the first hole 32 is circular in plan view. Although not shown, the first hole 32 may have other shapes such as an ellipse or a polygon.

Next, the shape of the second hole 33 in plan view will be described. As described above, the second hole 33 is a hole through which the joint portion 40 described below enters. As described below, the junction portion 40 includes a plating layer formed by a plating process. The second hole 33 is preferably configured so that the plating solution easily penetrates into the second hole 33 during the plating process. For example, it is preferable that the size S2 of the second hole 33 is larger than the size S1 of the first hole 32 in the in-plane direction of the fourth surface 302 of the second mask 30 . Furthermore, although not shown, the size S2 of the second hole 33 may be smaller than the size S1 of the first hole 32 . Also, the dimension S2 of the second hole 33 may be the same as the dimension S1 of the first hole 32 .

The size S1 of the first hole 32 is determined based on the pixel density of the organic EL substrate 92 and the like. The size S1 of the first hole 32 is, for example, not less than 10 μm and not more than 60 μm. The dimensions, width, length, and thickness of the first hole 32 and other components of the mask 12 are calculated based on cross-sectional images of the mask 12 obtained using a scanning microscope, unless otherwise specified.

The size S2 of the second hole 33 may be greater than 10 μm, greater than 20 μm, greater than 30 μm, or greater than 40 μm. By increasing the size S2 of the second hole 33 , the plating solution easily penetrates into the second hole 33 during the plating process for forming the joint portion 40 . Also, the size S2 of the second hole 33 may be 200 μm or less, 150 μm or less, 120 μm or less, or 100 μm or less. By reducing the size S2 of the second holes 33 , the number of the second holes 33 in the peripheral region 37 can be increased, thereby increasing the contact area between the second mask 30 and the bonding portion 40 .

Moreover, the range of the size S2 of the second hole 33 may also be determined by a combination of any one of the plurality of upper limit candidate values and any one of the plurality of lower limit candidate values. For example, the size S2 of the second hole 33 can range from 10 μm to 200 μm, from 20 μm to 150 μm, from 30 μm to 120 μm, and from 40 μm to 100 μm. Moreover, the range of the size S2 of the second hole 33 can also be determined by a combination of any two of the plurality of lower limit candidate values mentioned above. For example, the size S2 of the second hole 33 can range from 10 μm to 30 μm, from 10 μm to 20 μm, from 20 μm to 40 μm, and from 20 μm to 30 μm. Moreover, the range of the size S2 of the second hole 33 can be determined by a combination of any two of the plurality of upper limit candidate values mentioned above. For example, the size S2 of the second hole 33 can range from 100 μm to 150 μm, from 100 μm to 120 μm, from 120 μm to 200 μm, and from 150 μm to 200 μm.

In addition, the shape of the second hole 33 in a plan view may be easily restrained on the side of the fourth surface 302 of the second mask 30 and the joint portion 40 is separated from the second hole 33 of the second mask 30 . For example, the second hole 33 may include a corner portion having an inner angle of less than 90 degrees. For example, the shape of the second hole 33 may also have a triangle, a star, or a parallelogram.

In the example shown in FIG. 5 , a plurality of, for example, two second holes 33 are arranged in a direction from the boundary between the effective area 36 and the peripheral area 37 to the outer edge of the peripheral area 37 . However, the arrangement method of the second holes 33 is not particularly limited. For example, one second hole 33 may exist in the direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37 . In addition, three or more second holes 33 may be arranged in a direction from the boundary between the effective area 36 and the peripheral area 37 to the outer edge of the peripheral area 37 .

Next, the shape of the first hole 32 in the sectional view will be described. As shown in FIG. 6 , the first hole 32 may include a portion where the dimension S1 increases from the third surface 301 side toward the fourth surface 302 side. Thereby, generation of shadows in the vapor deposition step can be suppressed. Furthermore, the shape of the first hole 32 in the sectional view is not limited to the shape shown in FIG. 6 .

Next, the shape of the second hole 33 in the sectional view will be described. In the example shown in FIG. 6 , the dimension S2 of the second hole 33 is the same on the third surface 301 side and the fourth surface 302 side. Although not shown, the second hole 33 may include a portion where the dimension S2 increases from the third surface 301 side toward the fourth surface 302 side, similarly to the first hole 32 . Also, although not shown, the second hole 33 may include a portion where the size S2 decreases from the third surface 301 side toward the fourth surface 302 side. Thereby, it becomes easy to suppress that the joint part 40 separates from the 2nd hole 33 of the 2nd mask 30 on the 4th surface 302 side of the 2nd mask 30.

Next, a state in which the first mask 20 and the second mask 30 are combined will be described. FIG. 7 is a plan view showing the mask 12 including the first mask 20 and the second mask 30 viewed from the second surface 202 side. As shown in FIG. 7 , the mask 12 includes: a first mask 20 including a plurality of openings 22 ; and a plurality of second masks 30 located in the plurality of openings 22 of the first mask 20 . In addition, the cover 12 further includes a joining portion 40 for joining the first cover 20 and the second cover 30 .

FIG. 8 is a cross-sectional view of the mask 12 in FIG. 7 observed along the line VIII-VIII. As shown in FIG. 8 , the plate member 21 of the first cover 20 has a side surface 203 extending from the first surface 201 to the second surface 202 . The aforementioned opening 22 is defined by the side surface 203 .

In FIG. 8 , symbol T10 represents the thickness of the plate member 21 of the first mask 20 , and symbol T20 represents the thickness of the metal layer 31 of the second mask 30 .

The thickness T10 of the plate member 21 may be, for example, 200 μm or more, 300 μm or more, 400 μm or more, or 500 μm or more. Also, the thickness T10 of the plate member 21 may be, for example, 1000 μm or less, 800 μm or less, 700 μm or less, or 600 μm or less. The range of the thickness T10 of the plate member 21 can also be determined by a combination of any one of the above-mentioned plurality of lower limit candidate values and any one of the above-mentioned plurality of upper limit candidate values, for example, it can be more than 200 μm and less than 1000 μm, and can be 300 μm. μm to 800 μm, may be 400 μm to 700 μm, may be 500 μm to 600 μm, and may be 500 μm to 800 μm. In addition, the range of the thickness T10 of the plate member 21 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be from 200 μm to 500 μm, from 200 μm to 400 μm, and from 300 μm More than 500 μm and less than 300 μm and less than 400 μm. In addition, the range of the thickness T10 of the plate member 21 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 600 μm to 1000 μm, 600 μm to 800 μm, or 700 μm The above 1000 μm or less may be 700 μm or more and 800 μm or less.

In addition, the thickness T20 of the metal layer 31 may be, for example, 4 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. Also, the thickness T20 of the metal layer 31 may be, for example, 20 μm or less, 18 μm or less, 15 μm or less, or 12 μm or less. The range of the thickness T20 of the metal layer 31 can also be determined by a combination of any one of the above-mentioned plurality of lower limit candidate values and any one of the above-mentioned plurality of upper limit candidate values, for example, it can be 4 μm or more and 20 μm or less, and it can be 5 μm. μm to 18 μm, may be 7 μm to 15 μm, and may be 10 μm to 12 μm. In addition, the range of the thickness T20 of the metal layer 31 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be from 4 μm to 10 μm, from 4 μm to 7 μm, and from 5 μm The above 10 μm or less may be 5 μm or more and 7 μm or less. In addition, the range of the thickness T20 of the metal layer 31 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 12 μm to 20 μm, 12 μm to 18 μm, or 15 μm More than 20 μm and less than 15 μm and less than 18 μm.

As shown in FIG. 8, the joint part 40 has: a first part 41, which is in contact with the first cover 20; The peripheral regions 37 meet.

The first part 41 includes at least a side part 42 and a first surface part 43 . The side portion 42 is a portion of the first portion 41 that is in contact with the side surface 203 of the first cover 20 . Also, the first surface portion 43 is a portion of the first portion 41 that is in contact with the first surface 201 of the first mask 20 . By making the first part 41 contact the first mask 20 on the two surfaces of the side surface 203 and the first surface 201 of the first mask 20, when a force is applied to the mask 12 from the outside, The force generated between the cover 20 and the first portion 41 of the joining portion 40 is dispersed in a plurality of directions. Thereby, separation of the first portion 41 from the first mask 20 can be suppressed. As shown in FIG. 8 , the first portion 41 may further include a second surface portion 44 in contact with the second surface 202 of the first mask 20 .

The second portion 46 includes at least a fourth surface portion 47 in contact with the fourth surface 302 of the peripheral region 37 of the second mask 30 . Also, when the second hole 33 is formed in the peripheral region 37 , the second portion 46 may further include a hole portion 48 located inside the second hole 33 . By including the hole portion 48 in the second portion 46, the contact area between the peripheral region 37 of the second mask 30 and the second portion 46 of the bonding portion 40 can be increased. Thereby, separation of the second portion 46 from the peripheral region 37 of the second mask 30 can be suppressed.

FIG. 9 is an enlarged cross-sectional view of the mask 12 in FIG. 8 . As shown in FIG. 9 , the side surface 203 of the first cover 20 may have a protruding portion 203t located in the opening 22 and protruding toward the second cover 30 side. Such protruding portions 203t can be generated when the plate member 21 is wet-etched from both sides of the first surface 201 and the second surface 202 to form the opening 22 in the plate member 21 as described below. Because the side surface 203 of the first cover 20 has this kind of protruding portion 203t, so compared with the situation that the side surface 203 is a flat surface, the side surface portion 42 of the first portion 41 of the joining portion 40 can be aligned with the side surface of the first cover 20. The contact area between 203 increases. Thereby, the separation of the first portion 41 of the bonding portion 40 from the side surface 203 of the first cover 20 can be suppressed. Also, the anchoring effect of the protruding portion 203t of the side surface 203 of the first cover 20 on the side surface portion 42 of the first portion 41 of the joining portion 40 can also play the following effect: restrain the first portion 41 from the side surface 203 of the first cover 20 separate.

In FIG. 9 , symbol R1 represents the protruding length of the protruding portion 203 t of the side surface 203 with respect to the first surface 201 . The protruding length R1 of the protruding portion 203t may be, for example, 10 μm or more, 20 μm or more, 30 μm or more, or 40 μm or more. By making the protruding length R1 of the protruding portion 203t larger, the anchoring effect can be enhanced. Also, the protruding length R1 of the protruding portion 203t may be 100 μm or less, 80 μm or less, 65 μm or less, or 50 μm or less.

In addition, the range of the protruding length R1 of the protruding portion 203t can also be determined by a combination of any one of the above multiple lower limit candidate values and any one of the above multiple multiple upper limit candidate values, for example, it can be 10 μm or more and 100 μm or less, It may be 20 μm to 80 μm, 30 μm to 65 μm, or 40 μm to 50 μm. In addition, the range of the protruding length R1 of the protruding portion 203t can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 10 μm to 40 μm, 10 μm to 30 μm, or 10 μm. μm to 20 μm, may be 20 μm to 40 μm, and may be 20 μm to 30 μm. In addition, the range of the protruding length R1 of the protruding portion 203t can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 50 μm to 100 μm, 50 μm to 80 μm, or 65 μm. μm to 100 μm, may be 65 μm to 80 μm, or may be 80 μm to 100 μm.

Preferably, as shown in FIG. 9 , the side surface 203 of the first mask 20 includes a rough surface 203s with concavities and convexities. In this case, the side portion 42 of the first portion 41 of the joint portion 40 can enter into the unevenness of the rough surface 203s of the side face 203, so that the relative height of the side portion 42 of the joint portion 40 to the side face 203 of the first cover 20 can be further improved. The tightness. Thereby, the separation of the first portion 41 of the bonding portion 40 from the side surface 203 of the first cover 20 can be suppressed.

The surface roughness of the rough surface 203s of the side surface 203 is the arithmetic mean roughness Sa. The arithmetic mean roughness of the rough surface 203s was calculated using the measuring device based on ISO (International Organization for Standardization, International Organization for Standardization) 25178. The arithmetic mean roughness of the rough surface 203s may be greater than 0.12 μm, greater than 0.14 μm, greater than 0.17 μm, or greater than 0.19 μm. By increasing the arithmetic average roughness of the rough surface 203s of the side surface 203, the anchoring effect can be enhanced. In addition, the arithmetic average roughness of the rough surface 203s may be 0.28 μm or less, 0.25 μm or less, 0.23 μm or less, or 0.21 μm or less.

In addition, the range of the arithmetic mean roughness of the rough surface 203s can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be not less than 0.12 μm and not more than 0.28 μm , can be 0.14 μm to 0.25 μm, can be 0.17 μm to 0.23 μm, and can also be 0.19 μm to 0.21 μm. In addition, the range of the arithmetic mean roughness of the rough surface 203s can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 0.12 μm to 0.19 μm, 0.12 μm to 0.17 μm, or 0.12 μm to 0.14 μm, may be 0.14 μm to 0.19 μm, or 0.14 μm to 0.17 μm. In addition, the range of the arithmetic mean roughness of the rough surface 203s can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 0.21 μm to 0.28 μm, 0.21 μm to 0.25 μm, or 0.23 μm to 0.28 μm, may be 0.23 μm to 0.25 μm, or 0.25 μm to 0.28 μm.

In FIG. 9 , symbol T1 represents the thickness of the side portion 42 of the first portion 41 of the bonding portion 40 located on the side surface 203 of the first mask 20 . Also, symbol T2 represents the thickness of the first surface portion 43 of the first portion 41 of the bonding portion 40 located on the first surface 201 of the first mask 20 . In addition, symbol T3 represents the thickness of the second surface portion 44 of the first portion 41 of the bonding portion 40 located on the second surface 202 of the first mask 20 .

The thickness T1 of the side portion 42 may be, for example, 20 μm or more, 30 μm or more, 40 μm or more, or 50 μm or more. Also, the thickness T1 of the side surface portion 42 may be, for example, 110 μm or less, 90 μm or less, 70 μm or less, or 60 μm or less. The range of the thickness T1 of the side portion 42 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be more than 20 μm and less than 110 μm, and can be 30 μm. μm to 90 μm, may be 40 μm to 70 μm, may be 40 μm to 90 μm, and may be 50 μm to 60 μm. In addition, the range of the thickness T1 of the side portion 42 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 20 μm to 50 μm, 20 μm to 40 μm, and 30 μm More than 50 μm and less than 30 μm and less than 40 μm. In addition, the range of the thickness T1 of the side portion 42 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 60 μm to 110 μm, 60 μm to 90 μm, or 70 μm The above 110 μm or less may be 70 μm or more and 90 μm or less.

The thickness T2 of the first surface portion 43 may be, for example, 3 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. Also, the thickness T2 of the first surface portion 43 may be, for example, 30 μm or less, 25 μm or less, 20 μm or less, or 15 μm or less. The range of the thickness T2 of the first surface portion 43 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be not less than 3 μm and not more than 30 μm. It is 5 μm to 25 μm, may be 7 μm to 20 μm, and may be 10 μm to 15 μm. In addition, the range of the thickness T2 of the first surface portion 43 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be between 3 μm and 10 μm, it can be between 3 μm and 7 μm, it can be 5 μm or more and 10 μm or less, or 5 μm or more and 7 μm or less. In addition, the range of the thickness T2 of the first surface portion 43 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 15 μm to 30 μm, 15 μm to 25 μm, or 20 μm to 30 μm, or 20 μm to 25 μm.

The thickness T3 of the second surface portion 44 may be, for example, 30 μm or more, 40 μm or more, 50 μm or more, or 60 μm or more. Also, the thickness T3 of the second surface portion 44 may be, for example, 150 μm or less, 120 μm or less, 90 μm or less, or 70 μm or less. The range of the thickness T3 of the second surface portion 44 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be 30 μm or more and 150 μm or less. It is 40 μm to 120 μm, may be 50 μm to 90 μm, and may be 60 μm to 70 μm. In addition, the range of the thickness T3 of the second surface portion 44 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 30 μm to 60 μm, 30 μm to 50 μm, or 40 μm or more and 60 μm or less, or 40 μm or more and 50 μm or less. In addition, the range of the thickness T3 of the second surface portion 44 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 70 μm to 150 μm, 70 μm to 120 μm, or 90 μm to 150 μm, or 90 μm to 120 μm.

The surface of the first surface portion 43 of the first portion 41 of the bonding portion 40 may also be located on the same plane as the third surface 301 of the second mask 30 . Such a surface of the first surface portion 43 can be produced in the case where the first surface portion 43 is formed by performing the plating process to infiltrate the plating solution into the surface to be used to form the second mask 30. Between the base substrate 65 described below and the first surface 201 of the first mask 20 . Furthermore, the concept of "on the same plane" does not only include the case where the distance T4 between the surface of the first surface portion 43 in the thickness direction of the second mask 30 and the third surface 301 of the second mask 30 is zero. , including the case where the distance T4 is 15 μm or less, 10 μm or less, or 5 μm or less.

In FIG. 9 , symbol T5 represents the thickness of the fourth surface portion 47 of the second portion 46 of the bonding portion 40 located on the fourth surface 302 of the second mask 30 . The thickness T5 of the fourth surface portion 47 may be, for example, 30 μm or more, 40 μm or more, 50 μm or more, or 60 μm or more. Also, the thickness T5 of the fourth surface portion 47 may be, for example, 150 μm or less, 120 μm or less, 90 μm or less, or 70 μm or less. The range of the thickness T5 of the fourth surface portion 47 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be 30 μm or more and 150 μm or less. It is 40 μm to 120 μm, may be 50 μm to 90 μm, and may be 60 μm to 70 μm. In addition, the range of the thickness T5 of the fourth surface portion 47 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be 30 μm to 60 μm, 30 μm to 50 μm, or 40 μm or more and 60 μm or less, or 40 μm or more and 50 μm or less. In addition, the range of the thickness T5 of the fourth surface portion 47 can also be determined by a combination of any two of the above-mentioned multiple upper limit candidate values, for example, it can be 70 μm to 150 μm, 70 μm to 120 μm, or 90 μm to 150 μm, or 90 μm to 120 μm. Moreover, as shown in FIG. 9, the 4th surface part 47 may include the part whose thickness T5 increases from the 1st mask 20 side toward the 2nd mask 30 side.

In FIG. 9 , symbol W2 represents the width of the first surface portion 43 of the first portion 41 of the bonding portion 40 . The so-called width W2 of the first surface portion 43 refers to the width W2 from the end of the first surface 201 of the first mask 20 on the side of the opening 22 to the end of the first surface portion 43 of the first portion 41 of the joining portion 40. 1 The distance in the in-plane direction of the first surface 201 of the mask 20. The width W2 of the first surface portion 43 may be greater than or equal to 3 μm, greater than or equal to 5 μm, greater than or equal to 7 μm, or greater than or equal to 10 μm. By increasing the width W2 of the first surface portion 43 , the adhesiveness of the first portion 41 of the bonding portion 40 with respect to the first mask 20 can be improved. Also, the width W2 of the first surface portion 43 may be 500 μm or less, 250 μm or less, 100 μm or less, or 30 μm or less.

The range of the width W2 of the first surface portion 43 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be 3 μm or more and 500 μm or less. It is 5 μm to 250 μm, may be 7 μm to 100 μm, and may be 10 μm to 30 μm. In addition, the range of the width W2 of the first surface portion 43 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be between 3 μm and 10 μm, it can be between 3 μm and 7 μm, it can be 3 μm to 5 μm, may be 5 μm to 10 μm, and may be 5 μm to 7 μm. In addition, the range of the width W2 of the first surface portion 43 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be between 30 μm and 500 μm, it can be between 30 μm and 250 μm, it can be 100 μm to 500 μm, may be 100 μm to 250 μm, or may be 250 μm to 500 μm.

In FIG. 9 , symbol W3 represents the width of the second surface portion 44 of the first portion 41 of the bonding portion 40 . The so-called width W3 of the second surface portion 44 refers to the width W3 from the end of the second surface 202 of the first mask 20 on the side of the opening 22 to the end of the second surface portion 44 of the first portion 41 of the joining portion 40. 1 is the distance in the in-plane direction of the second surface 202 of the mask 20. The width W3 of the second surface portion 44 may be 3 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. By increasing the width W3 of the second surface portion 44 , the adhesiveness of the first portion 41 of the junction portion 40 with respect to the first mask 20 can be improved. Also, the width W3 of the second surface portion 44 may be smaller than the width of the second surface 202, for example, may be 80 μm or less, may be 60 μm or less, may be 40 μm or less, or may be 20 μm or less.

The range of the width W3 of the second surface portion 44 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be 3 μm or more and 80 μm or less. It may be 5 μm to 60 μm, may be 7 μm to 60 μm, may be 7 μm to 40 μm, and may be 10 μm to 20 μm. In addition, the range of the width W3 of the second surface portion 44 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be between 3 μm and 10 μm, it can be between 3 μm and 7 μm, it can be 3 μm to 5 μm, may be 5 μm to 10 μm, and may be 5 μm to 7 μm. In addition, the range of the width W3 of the second surface portion 44 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 20 μm to 80 μm, 20 μm to 60 μm, or 20 μm to 60 μm. 40 μm to 80 μm, may be 40 μm to 60 μm, and may be 60 μm to 80 μm.

Next, the manufacturing method of the mask 12 is demonstrated. The manufacturing method of the mask 12 includes: a first mask preparation step, which is to prepare the first mask 20; a second mask preparation step, which is to prepare the second mask 30; and a junction forming step, which is to form the The junction part 40 where the first mask 20 and the second mask 30 are joined. In addition, the order of the first mask preparation step and the second mask preparation step is arbitrary.

The first mask preparation step will be described with reference to FIGS. 10 to 12 .

First, the plate member 21 made of metal is prepared. The plate member 21 has, for example, an iron alloy containing nickel of 30% by mass or more and 38% by mass or less. Next, as shown in FIG. 10 , the first surface resist pattern 50 is provided on the first surface 201 of the plate member 21 , and the second surface resist pattern 55 is provided on the second surface 202 . The first-surface resist pattern 50 includes a first-surface resist layer 51 and openings 52 formed in the first-surface resist layer 51 . The second-surface resist pattern 55 also includes the second-surface resist layer 56 and the opening 57 in the same manner. The opening 52 and the opening 57 are located in a portion of the plate member 21 where the opening portion 22 is formed.

The resist layer 51 on the first surface and the resist layer 56 on the second surface are, for example, attached to the first surface 201 and the second surface of the plate member 21 with a dry film containing a photosensitive resist material such as acrylic photocurable resin. 202 obtained. In addition, the first surface resist layer 51 and the second surface resist layer 56 can also be formed by applying a coating liquid containing a negative photosensitive resist material to the first surface 201 and the second surface of the plate member 21. 202 is obtained by drying the coating solution. The opening 52 and the opening 57 are formed by exposing and developing the first surface resist layer 51 and the second surface resist layer 56 .

Next, the plate member 21 is wet-etched from the first surface 201 side and the second surface 202 side using the first surface resist pattern 50 and the second surface resist pattern 55 as masks. By wet etching, the concave portion formed on the first surface 201 side and the concave portion formed on the second surface 202 side merge to form an opening 22 in the plate member 21 as shown in FIG. 11 . In addition, in the side surface 203 of the plate member 21 , the protrusion 203 t may be formed at a position where the concave portion on the first surface 201 side and the concave portion on the second surface 202 side meet.

Then, a blasting step of blasting the side surface 203 of the first mask 20 may also be performed. Thereby, the rough surface 203s can be formed on the side surface 203 of the first mask 20 .

The blasting step may be performed in a state where the above-mentioned first surface resist pattern 50 and second surface resist pattern 55 are provided on the plate member 21 . On the other hand, as shown in FIG. 11 , the resist pattern 50 on the first surface protrudes toward the opening 22 side compared to the end portion of the first surface 201, and the resist pattern 55 on the second surface also protrudes more than the end portion of the second surface 201. The end of the surface 202 protrudes further toward the opening 22 side. Therefore, the abrasive B such as sand may be prevented from reaching the side surface 203 of the first mask 20 by the resist pattern 50 on the first surface and the resist pattern 55 on the second surface. Considering this point, as shown in FIG. 12 , it is also possible to use the first surface resist layer 53 and the second surface resist layer 53 different from the first surface resist layer 51 and the second surface resist layer 56 used in wet etching. In the state where the resist layer 58 is provided on the first surface 201 and the second surface 202 of the plate member 21, a blasting step is performed. The end portion 53 e of the resist layer 53 on the first surface does not protrude further toward the opening portion 22 than the protruding portion 203 t of the side surface 203 of the first mask 20 . Similarly, the end portion 58e of the second-surface resist layer 58 does not protrude further toward the opening portion 22 than the protruding portion 203t of the side surface 203 of the first mask 20 . This prevents abrasives B such as sand from being prevented from reaching the side surface 203 of the first mask 20 by the first-surface resist layer 53 and the second-surface resist layer 58 .

Next, the second mask preparation step will be described with reference to FIGS. 13 to 15 .

First, the substrate 65 is prepared. At least the surface of the substrate 65 is preferably made of a conductive material. For example, the substrate 65 includes stainless steel or the like. Next, as shown in FIG. 13 , the first resist pattern 60 is formed on the surface of the substrate 65 . The first resist pattern 60 has a first resist layer 61 , and a plurality of first openings 62 and a plurality of second openings 63 formed in the first resist layer 61 . The first opening 62 is disposed in a portion of the metal layer 31 in the substrate 65 that should form the active region 36 of the second mask 30 . In addition, the second opening 63 is provided in a portion of the substrate 65 where the metal layer 31 of the peripheral region 37 of the second mask 30 is to be formed.

Next, as shown in FIG. 14 , a plating solution is supplied onto the substrate 65 . Thereby, the metal layer 31 including the plated layer produced by the electrolytic plating process can be formed in the first opening 62 and the second opening 63 of the first resist layer 61 . The plating solution contains, for example, nickel sulfamate, nickel bromide, or the like. In addition, the plating solution may further contain ferrous sulfamate or the like. Thereafter, as shown in FIG. 15 , the first resist pattern 60 is removed. In this way, the second mask 30 having a plurality of first holes 32 and second holes 33 can be formed on the substrate 65 .

Next, the bonding portion forming step will be described with reference to FIGS. 16 to 19 .

First, as shown in FIG. 16 , a photosensitive layer 71 covering the second mask 30 and the substrate 65 is formed on the substrate 65 provided with the second mask 30 . The photosensitive layer 71 may also be obtained by attaching a dry film containing a photosensitive resist material to the substrate 65 in the same manner as the first surface resist layer 51 described above. In addition, the photosensitive layer 71 may also be obtained by applying a coating liquid containing a negative photosensitive resist material on the substrate 65 and drying the coating liquid.

Next, as shown in FIG. 16 , an exposure step of irradiating light to a portion of the photosensitive layer 71 located on the effective region 36 of the second mask 30 is carried out. At this time, the portion of the photosensitive layer 71 located on the peripheral region 37 of the second mask 30 is not irradiated with light. Also, no light is irradiated to the portion of the photosensitive layer 71 that is located on the substrate 65 at the periphery of the second mask 30 . Also, as shown in FIG. 17 , the first mask 20 is placed on the photosensitive layer 71 on the substrate 65 so that the second mask 30 is positioned at the opening 22 of the first mask 20 .

Next, a developing step of developing the photosensitive layer 71 is carried out. Thereby, the part of the photosensitive layer 71 located on the peripheral region 37 of the second mask 30 is removed. Also, a portion of the photosensitive layer 71 located between the first surface 201 of the first mask 20 and the substrate 65 and a portion near the side surface 203 of the first mask 20 is removed. Furthermore, the developer does not reach or hardly reaches the part of the photosensitive layer 71 located between the first surface 201 of the first mask 20 and the substrate 65 that is far away from the side surface 203 of the first mask 20 . Therefore, as shown in FIG. 18 , between the first surface 201 of the first mask 20 and the substrate 65 , a part of the unexposed photosensitive layer 71 remains.

Next, as shown in FIG. 19 , a plating treatment step of supplying a plating solution onto the substrate 65 to form the bonding portion 40 is carried out. In the plating process step, the plating solution is in contact with the side surface 203 of the first mask 20 and the peripheral region 37 of the second mask 30, and the plating solution penetrates into the first surface 201 of the first mask 20 and the substrate 65 has removed the space of the photosensitive layer 71. The plating solution infiltrated into the space where the photosensitive layer 71 has been removed becomes the first surface portion 43 of the first portion 41 of the bonding portion 40 . Also, the plating solution remaining on the second surface 202 of the plate member 21 becomes the second surface portion 44 of the first portion 41 of the joint portion 40 . Although not shown, a resist layer may be preliminarily provided on a portion of the second surface 202 of the plate member 21 where the second surface portion 44 should not be formed before performing the plating treatment step. Thereby, the width W of the second surface portion 44 formed on the second surface 202 of the plate member 21 can be controlled.

In this embodiment, by adjusting the time of the developing step of developing the photosensitive layer 71, etc., the amount of the photosensitive layer 71 removed between the first surface 201 of the first mask 20 and the substrate 65 can be adjusted. Thereby, the width W2 of the first surface portion 43 formed by the plating solution penetrating into the space where the photosensitive layer 71 has been removed can be adjusted.

Thereafter, the photosensitive layer 71 is removed. In addition, the first mask 20 , the second mask 30 , and the bonding portion 40 are separated from the substrate 65 . In this way, the mask 12 provided with the 1st mask 20, the 2nd mask 30, and the junction part 40 which joins the 1st mask 20 and the 2nd mask 30 is obtained.

The order of the exposure step of irradiating light to the portion of the photosensitive layer 71 located on the effective region 36 of the second mask 30 and the step of disposing the first mask 20 on the photosensitive layer 71 is arbitrary. That is, the placement step may be performed after the exposure step, or the exposure step may be performed after the placement step.

In addition, in FIG. 16 , an example in which the photosensitive layer 71 is a photocurable type that is cured by being irradiated with light is shown, but it is not limited thereto. The composition of the photosensitive layer 71 and the composition of the exposure step only need to keep the part of the photosensitive layer 71 located on the effective area 36 of the second mask 30 in the subsequent developing step, and the part of the photosensitive layer 71 located on the second mask 30 The portion on the peripheral region 37 is removed, and the portion of the photosensitive layer 71 located between the first mask 20 and the substrate 65 is partially removed, which may be optional.

Next, the effect of the mask 12 of this embodiment will be described with reference to FIGS. 20 and 21 . Fig. 20 is a diagram showing a state where an external force F is applied to the mask of the comparative form. In addition, FIG. 21 is a diagram showing a state where an external force F is applied to the mask 12 of the present embodiment. The external force F is applied to the third surface 301 of the second mask 30 along the thickness direction of the second mask 30 , for example. As shown in FIG. 20 , in the mask of the comparative form, the first portion 41 of the bonding portion 40 is only in contact with the side surface 203 of the first mask 20 and is not in contact with the first surface 201 .

When an external force is applied to the second cover 30 , a force is generated between the first portion 41 of the joining portion 40 and the plate member 21 of the first cover 20 . In the example shown in FIG. 20 , the first portion 41 of the joining portion 40 is only in contact with the side surface 203 of the first cover 20 , so the force F1 is generated only between the side portion 42 of the first portion 41 and the side surface 203 . In this case, when F1 exceeds the adhesive force between the side portion 42 and the side surface 203 of the joining portion 40 , the first portion 41 may be separated from the first cover 20 .

On the other hand, in this embodiment, the first part 41 of the junction part 40 further includes the first surface part 43 . Therefore, as shown in FIG. 21 , not only the force F1 is generated between the side portion 42 and the side surface 203 of the first portion 41 , but also the force F2 is generated between the first surface portion 43 and the first surface 201 of the first portion 41 . That is, compared with the case of the comparative embodiment shown in FIG. 20 , the force generated between the first portion 41 of the joining portion 40 and the plate member 21 of the first cover 20 can be dispersed. Thereby, local concentration of force generated between the first portion 41 of the joint portion 40 and the plate member 21 of the first cover 20 can be suppressed. Thereby, the separation of the first part 41 of the joint part 40 from the first mask 20 can be suppressed. In addition, the contact area of the first portion 41 of the bonding portion 40 with the first mask 20 increases by the amount corresponding to the first surface portion 43 . In this point, separation of the first portion 41 from the first mask 20 can be suppressed.

In addition, various changes can be added to the said embodiment. Hereinafter, modification examples will be described while referring to the drawings as necessary. In the following description and the drawings used in the following description, the same symbols as those used for the corresponding parts in the above-mentioned embodiment are used for parts that can be configured in the same manner as the above-mentioned embodiment, and Repeated descriptions are omitted. In addition, when it is known that the operation and effect obtained in the above-mentioned embodiment can be obtained in the modified example, the description may be omitted.

In the above-mentioned embodiment, an example was shown in which one plating layer is included in the metal layer 31 of the second mask 30, but it is not limited thereto. The metal layer 31 may also include a plurality of plating layers. Hereinafter, an example in which the metal layer 31 includes two plating layers will be described with reference to FIGS. 22 to 27 .

First, as shown in FIG. 22 , the first resist pattern 60 is formed on the surface of the substrate 65 . The first resist pattern 60 includes a first resist layer 61 , a plurality of first openings 62 and second openings 63 formed in the first resist layer 61 . The first opening 62 is provided in the part of the metal layer 31 in the substrate 65 where the effective region 36 of the second mask 30 is to be formed, as in the case of the above-mentioned embodiment shown in FIG. 13 . On the other hand, the second opening 63 extends to the entire portion of the substrate 65 corresponding to the peripheral region 37 of the second mask 30 .

Next, as shown in FIG. 23 , a plating solution is supplied onto the substrate 65 . Thereby, the first plating layer 311 is formed in the first opening 62 and the second opening 63 of the first resist layer 61 by electrolytic plating treatment.

Next, as shown in FIG. 24 , a second resist layer 66 is formed on the first plating layer 311 formed in the second opening 63 . An opening 67 is formed in the second resist layer 66 . The second resist layer 66 is provided on the portion of the second mask 30 where the above-mentioned second hole 33 is to be formed.

Next, as shown in FIG. 25 , a plating solution is supplied onto the substrate 65 . Thereby, the second plating layer 312 is formed in the first opening 62 of the first resist layer 61 and the opening 67 of the second resist layer 66 by the electrolytic plating process. The composition of the second plating layer 312 may be the same as or different from that of the first plating layer 311 .

Next, the first resist layer 61 and the second resist layer 66 are removed. Thereby, as shown in FIG. 26 , a second mask 30 having an effective area 36 including a plurality of first holes 32 and a peripheral area 37 including a plurality of second holes 33 can be obtained. The first hole 32 of the active area 36 penetrates through the metal layer 31 including the first plating layer 311 and the second plating layer 312 . On the other hand, the second hole 33 in the peripheral region 37 penetrates through the second plating layer 312 but does not penetrate the first plating layer 311 . That is, in this variation example, the second hole 33 in the peripheral region 37 is located in the concave portion on the side of the fourth surface 302 so as not to penetrate the metal layer 31 .

After the second mask 30 is produced, a joint portion forming step of forming the joint portion 40 is carried out in the same manner as in the above-mentioned embodiment. For example, after implementing the step of forming the photosensitive layer 71 on the substrate 65, the step of exposing the photosensitive layer 71, the step of disposing the first mask 20, and the step of developing the photosensitive layer 71, as shown in FIG. A plating solution is supplied to the 65 to form the bonding portion 40 . Also in this variation example, since the plating solution penetrates into the second hole 33 in the peripheral region 37 of the second mask 30, the adhesion between the joint portion 40 and the second mask 30 can be improved.

Thereafter, the photosensitive layer 71 is removed. In addition, the first mask 20 , the second mask 30 , and the bonding portion 40 are separated from the substrate 65 . In this way, as shown in FIG. 27 , a mask 12 can be obtained that includes a first mask 20 and a second mask 30 , and a joining portion that joins the first mask 20 and the second mask 30 . 40.

In the said embodiment, although the example which comprised one plate member 21 of the 1st cover 20 was shown, it is not limited to this. The plate member 21 may include a plurality of members laminated in the thickness direction. Hereinafter, an example in which the plate member 21 includes two members joined by an adhesive layer will be described with reference to FIG. 28 .

FIG. 28 is a cross-sectional view showing the mask 12 of this modification. The plate member 21 of the 1st cover 20 has: the 1st member 211, and it is positioned at the 1st face 201 side; The 2nd member 212, it is positioned at the 2nd face 202 side; 2 members 212 are engaged. The adhesive layer 213 includes adhesive resin. For example, the adhesive layer 213 includes acrylic resin. The thickness of the bonding layer 213 may be, for example, 3 μm or more, 5 μm or more, 7 μm or more, or 10 μm or more. In addition, the thickness of the adhesive layer 213 may be, for example, 40 μm or less, 30 μm or less, 20 μm or less, or 10 μm or less. The thickness range of the subsequent layer 213 can also be determined by a combination of any one of the plurality of lower limit candidate values and any one of the above plurality of upper limit candidate values, for example, it can be 3 μm or more and 40 μm or less, and can be 5 μm Above 30 μm, may be between 7 μm and 20 μm, or may be between 10 μm and 10 μm. In addition, the range of the thickness of the adhesive layer 213 can also be determined by a combination of any two of the plurality of lower limit candidate values, for example, it can be between 3 μm and 10 μm, it can be between 3 μm and 7 μm, and it can be above 5 μm 10 μm or less, or 5 μm or more and 7 μm or less. In addition, the range of the thickness of the adhesive layer 213 can also be determined by a combination of any two of the plurality of upper limit candidate values, for example, it can be 10 μm to 40 μm, 10 μm to 30 μm, and 20 μm 40 μm or less, or 20 μm or more and 30 μm or less.

The material of the first member 211 and the material of the second member 212 may be the same or different. For example, both the first member 211 and the second member 212 have an iron alloy containing nickel in a range of 30% by mass to 38% by mass.

In a modification example, the first member 211 is wet-etched from the first surface side and the second surface side to form an opening in the first member 211 . In addition, the second member 212 is wet-etched from the first surface side and the second surface side to form openings in the second member 212 . Thereafter, the first member 211 and the second member 212 are laminated so that the opening of the first member 211 overlaps the opening of the second member 212 . Thereby, the 1st mask 20 in which the opening part 22 was formed can be obtained. Both the side surface 203 of the first member 211 and the side surface 203 of the second member 212 include a protruding portion 203t.

According to this variation example, the plate member 21 of the first mask 20 is constituted by a plurality of members, thereby, compared with the case where the plate member 21 includes one member, the time required for wet etching for forming an opening in the member can be shortened. time needed. Thereby, for example, the amount of etching occurring at the side of the component can be reduced.

In addition, in the above-mentioned embodiment, an example was shown in which the peripheral region 37 of the second mask 30 has the second hole 33 through which the joining portion 40 enters, but the present invention is not limited thereto. For example, as shown in FIG. 29 , the second hole 33 may not be formed in the peripheral region 37 of the second mask 30 . Even in this case, since the second portion 46 of the bonding portion 40 includes the fourth surface portion 47 in contact with the fourth surface 302 , separation of the second portion 46 from the peripheral region 37 of the second mask 30 can be suppressed. Also, since the first portion 41 of the joint portion 40 includes the side portion 42 and the first surface portion 43, the force generated between the first portion 41 of the joint portion 40 and the plate member 21 of the first cover 20 can be dispersed. . Thereby, local concentration of force generated between the first portion 41 of the joint portion 40 and the plate member 21 of the first cover 20 can be suppressed, and separation of the first portion 41 of the joint portion 40 from the first cover 20 can be suppressed. . In addition, the contact area of the first portion 41 of the bonding portion 40 with the first mask 20 increases by the amount corresponding to the first surface portion 43 . Also in this point, separation of the first portion 41 from the first mask 20 can be suppressed.

In addition, although several modification examples were demonstrated with respect to the said embodiment, it cannot be overemphasized that a plurality of modification examples can be combined suitably and applied.

10‧‧‧Mask device 12‧‧‧Masking 15‧‧‧Framework 20‧‧‧1st mask 21‧‧‧board components 22‧‧‧opening 30‧‧‧Second mask 31‧‧‧Metal layer 32‧‧‧1st hole 33‧‧‧The second hole 36‧‧‧effective area 37‧‧‧peripheral area 40‧‧‧junction 41‧‧‧Part 1 42‧‧‧side part 43‧‧‧Section 1 44‧‧‧Part 2 46‧‧‧Part 2 47‧‧‧Part 4 48‧‧‧hole part 50‧‧‧Resist pattern on the first side 51‧‧‧The first surface resist layer 52‧‧‧opening 53‧‧‧The first surface resist layer 53e‧‧‧end 55‧‧‧Resist pattern on the second side 56‧‧‧The second surface resist layer 57‧‧‧opening 58‧‧‧The second surface resist layer 58e‧‧‧end 60‧‧‧The first resist pattern 61‧‧‧The first resist layer 62‧‧‧First opening 63‧‧‧The second opening 65‧‧‧substrate 66‧‧‧Second resist layer 67‧‧‧opening 71‧‧‧photosensitive layer 90‧‧‧Evaporation device 92‧‧‧Organic EL substrate 93‧‧‧magnet 94‧‧‧crucible 96‧‧‧heater 98‧‧‧Evaporation materials 99‧‧‧evaporation layer 100‧‧‧Organic EL display devices 201‧‧‧Side 1 202‧‧‧Side 2 203‧‧‧side 203s‧‧‧rough surface 203t‧‧‧protruding part 211‧‧‧The first component 212‧‧‧Second component 213‧‧‧adhesion layer 301‧‧‧Side 3 302‧‧‧Side 4 311‧‧‧The first coating layer 312‧‧‧The second coating layer B‧‧‧abrasive F‧‧‧external force F1‧‧‧force F2‧‧‧force

FIG. 1 is a diagram showing a vapor deposition apparatus including a mask apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing an organic EL display device manufactured using the mask device shown in FIG. 1 . Fig. 3 is a plan view showing a first mask of the mask device. Fig. 4 is a plan view showing a second mask of the mask device. Fig. 5 is an enlarged top view of the second mask. Fig. 6 is a cross-sectional view of the second mask in Fig. 5 observed along the line VI-VI. Fig. 7 is a plan view showing a mask provided with a first mask and a second mask viewed from the second surface side. FIG. 8 is a cross-sectional view of the mask of FIG. 7 observed along line VIII-VIII. FIG. 9 is an enlarged cross-sectional view of the mask shown in FIG. 8 . Fig. 10 is a diagram showing a first mask preparation step for preparing a first mask. Fig. 11 is a diagram showing a first mask preparation step for preparing a first mask. Fig. 12 is a diagram showing a first mask preparation step for preparing a first mask. Fig. 13 is a diagram showing a second mask preparation step for preparing a second mask. Fig. 14 is a diagram showing a second mask preparation step for preparing a second mask. Fig. 15 is a diagram showing a second mask preparation step for preparing a second mask. Fig. 16 is a diagram showing a joint forming step for forming a joint. Fig. 17 is a diagram showing a joint forming step for forming a joint. Fig. 18 is a diagram showing a joint forming step for forming a joint. Fig. 19 is a diagram showing a joint forming step for forming a joint. Fig. 20 is a diagram showing a state in which an external force is applied to the mask of the first surface portion of the first portion having no joining portion. Fig. 21 is a diagram showing a state in which an external force is applied to a mask according to an embodiment of the present invention. Fig. 22 is a diagram showing a modified example of the second mask preparation step. Fig. 23 is a diagram showing a modified example of the second mask preparation step. Fig. 24 is a diagram showing a modified example of the second mask preparation step. Fig. 25 is a diagram showing a modified example of the second mask preparation step. Fig. 26 is a diagram showing a modified example of the joining portion forming step. Fig. 27 is a diagram showing a modified example of the joining portion forming step. Fig. 28 is a diagram showing a modified example of the first mask. Fig. 29 is a diagram showing a modified example of a mask.

12‧‧‧Masking

20‧‧‧1st mask

21‧‧‧board components

22‧‧‧opening

30‧‧‧Second mask

31‧‧‧Metal layer

32‧‧‧1st hole

33‧‧‧The second hole

36‧‧‧effective area

37‧‧‧peripheral area

40‧‧‧junction

41‧‧‧Part 1

42‧‧‧side part

43‧‧‧Section 1

44‧‧‧Part 2

46‧‧‧Part 2

47‧‧‧Part 4

48‧‧‧hole part

201‧‧‧Side 1

202‧‧‧Side 2

203‧‧‧side

301‧‧‧Side 3

302‧‧‧Side 4

Claims (18)

A mask comprising: a first mask, which includes an opening, and has a first surface, a second surface located on the opposite side of the first surface, and extending from the first surface to the second surface and dividing The side surface forming the above-mentioned opening; the second mask, which is located at the above-mentioned opening of the above-mentioned first mask, and includes a third surface located on the side of the first surface of the above-mentioned first mask and a surface of the first mask. The fourth surface on the side of the second surface, and has an effective area including the first hole penetrating the second mask, and a peripheral area located at the periphery of the effective area; and a joint portion, which has the first part and the second part, and the first mask is bonded to the second mask, and the first part includes at least a side part that is in contact with the side surface of the first mask and a side surface that is in contact with the first surface of the first mask. Next to the first surface portion, the second portion includes at least a fourth surface portion in contact with the fourth surface of the peripheral region of the second mask. The mask according to claim 1, wherein the third surface of the second mask and the surface of the first surface portion of the first part of the joint part are located on the same plane. The mask according to claim 1, wherein the width of the first surface portion of the first portion of the joint portion is 3 μm or more. The mask according to any one of claims 1 to 3, wherein the first part of the joint part further includes a second surface part in contact with the second surface of the first mask. The mask according to claim 4, wherein the width of the second surface portion of the first portion of the joint portion is 3 μm or more. The mask according to any one of claims 1 to 3, wherein the peripheral region of the second mask includes a second hole, and the second hole is directed from the fourth surface side of the second mask to the third surface The side is recessed, and the above-mentioned second part of the above-mentioned joint part further includes a hole part, and the hole part is located inside the above-mentioned second hole in the above-mentioned peripheral region of the above-mentioned second mask. The mask according to claim 6, wherein the second hole in the peripheral region of the second mask penetrates from the fourth surface side to the third surface side of the second mask. The mask according to claim 6, wherein the second hole in the peripheral region of the second mask has a size of not less than 10 μm and not more than 200 μm. The mask according to claim 6, wherein the shape of the second hole in the peripheral region of the second mask is circular or rectangular when viewed along the normal direction of the fourth surface of the second mask. The mask according to any one of claims 1 to 3, wherein the side surface of the first mask has a protruding portion located at the opening and protruding toward the second mask side. The mask according to any one of claims 1 to 3, wherein the side surface of the first mask includes a rough surface having an arithmetic average roughness of 0.12 μm or more. The mask according to any one of claims 1 to 3, wherein the thickness of the first mask is not less than 250 μm and not more than 1000 μm. The mask according to any one of claims 1 to 3, wherein the thickness of the second mask is 20 μm or less. The mask according to any one of claims 1 to 3, wherein the joint part includes a plated layer. A method of manufacturing a mask, which includes: a first mask preparation step, which is to prepare a first mask, the first mask includes an opening, and has a first surface and a first surface located on the opposite side of the first surface. 2 surfaces, and the side surface that extends from the first surface to the second surface and divides and forms the opening; the second mask preparation step is to prepare a second mask, and the second mask is located on the first mask The above-mentioned opening part, and includes the third surface located on the first surface side of the above-mentioned first mask and the fourth surface located on the second surface side of the first mask, and has a penetrating through the second mask The effective area of the first hole, and the peripheral area located at the periphery of the above-mentioned effective area; and the joint part forming step, which is to form a joint part having a first part and a second part by plating treatment, and the first part is at least Including the side part contacting the side surface of the first mask and the first surface part contacting the first surface of the first mask, the second part includes at least the first surface part of the second mask. The part of the fourth side where the four sides are connected. The method for manufacturing a mask according to claim 15, wherein the step of forming the junction part includes the following steps: forming a mask covering the second mask and the substrate on the substrate provided with the second mask. photosensitive layer: disposing the above-mentioned first mask on the above-mentioned photosensitive layer on the above-mentioned substrate with the above-mentioned second mask positioned at the above-mentioned opening of the above-mentioned first mask; exposing and developing the above-mentioned photosensitive layer in the following manner, That is, the portion of the photosensitive layer located on the effective area of the second mask is retained, the portion of the photosensitive layer located on the peripheral area of the second mask is removed, and the portion of the photosensitive layer located on the The part between the above-mentioned first mask and the above-mentioned substrate is partially removed; and the above-mentioned side surface of the above-mentioned first mask and the above-mentioned peripheral area of the above-mentioned second mask are connected with a plating solution, and the plating solution penetrates into the above-mentioned A plating solution is supplied so as to remove a space between the first mask and the substrate so that the space of the photosensitive layer is removed to form the bonding portion. The method for manufacturing a mask according to claim 15 or 16, wherein the first mask preparation step includes the following steps: preparing a plate member comprising metal, including a first surface and a second surface on the opposite side of the first surface and performing wet etching on the plate member from the first surface side and the second surface side to form the opening in the plate member. The mask manufacturing method according to claim 15 or 16, wherein the first mask preparation step includes a step of sandblasting the side surface of the first mask.

Images