KR20210025633A - Mask and its manufacturing method - Google Patents

Abstract

The mask includes a first mask including an opening, a second mask positioned in the opening of the first mask, and a bonding portion for bonding the first mask and the second mask. The first mask has a first surface, a second surface positioned on the opposite side of the first surface, and a side surface extending from the first surface to the second surface and defining an opening. The second mask includes a third surface located on the first surface side of the first mask and a fourth surface located on the second surface side of the first mask. Further, the second mask has an effective region including a first hole penetrating the second mask, and a peripheral region positioned at the periphery of the effective region. The bonding portion includes a first portion including at least a side portion in contact with the side surface of the first mask and a first surface portion in contact with the first surface of the first mask, and a fourth surface in contact with the fourth surface of the peripheral region of the second mask. It has a second portion comprising at least a portion.

Description

Mask and its manufacturing method

Embodiments of the present disclosure relate to a mask and a manufacturing method thereof.

In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have a high precision, for example, a pixel density of 400 ppi or more. In addition, the demand for ultra-high definition (UHD)-compatible devices is increasing even in portable devices, and in this case, the pixel density of the display device is required to be 800 ppi or more, for example.

Among display devices, organic EL display devices are attracting attention because of good responsiveness, low power consumption, and high contrast. As a method of forming a pixel of an organic EL display device, a method of forming a pixel in a desired pattern using a mask having through holes arranged in a desired pattern is known. Specifically, first, a mask is combined with a substrate for an organic EL display device. Subsequently, a vapor deposition material containing an organic material is attached to the substrate through the through hole of the mask. By performing such a vapor deposition process, a pixel containing an organic material can be formed on the substrate in a pattern corresponding to the pattern of the through hole of the mask.

In order to precisely fabricate an organic EL display device having a high pixel density, it is preferable that the thickness of the mask is small. On the other hand, as the thickness of the mask decreases, the rigidity of the mask decreases, and undulations, such as wrinkles, tend to occur in the mask. When the flatness of the mask is impaired by undulations such as wrinkles, the position of the evaporation material attached to the substrate is shifted from the design position. As a method of solving such a problem, for example, as disclosed in Patent Document 1, a method of combining a mask body having a plurality of through holes formed therein and a frame body having a thickness greater than that of the mask body and bonded to the mask body This is known. In Patent Literature 1, as a method of combining the mask body and the frame body, a method of bonding the mask body and the frame body through a metal layer formed by the electroforming method is proposed.

Japanese Patent Laid-Open No. 2003-68454

It is conceivable that when an external force is applied to the mask body or frame body, the metal layer is separated from the mask body or frame body.

An object of the embodiment of the present disclosure is to provide a mask capable of effectively solving such a problem and a method of manufacturing the same.

A first aspect of the present disclosure is a first mask including an opening, a first surface, a second surface positioned on the opposite side of the first surface, and extending from the first surface to the second surface, and the A first mask having a side surface defining an opening, a third surface located at the opening of the first mask, a third surface located at a side of the first surface of the first mask, and a second surface side of the first mask A second mask including a fourth surface to be formed, the second mask having an effective region including a first hole penetrating the second mask, and a peripheral region positioned at a periphery of the effective region, and the first mask A first portion including at least a side portion in contact with the side of the first surface and a first surface portion in contact with the first surface of the first mask, and a fourth surface in contact with the fourth surface of the peripheral region of the second mask It is a mask having a second part including at least a part, and having a bonding part for bonding the first mask and the second mask.

In the second aspect of the present disclosure, in the mask according to the first aspect described above, the third surface of the second mask and the surface of the first surface portion of the first portion of the junction are located on the same plane. You may have it.

In the third aspect of the present disclosure, in the mask according to the first aspect or the second aspect described above, the width of the first surface portion of the first portion of the bonding portion may be 3 μm or more.

A fourth aspect of the present disclosure is in the mask according to each of the above-described first aspect to the third aspect, wherein the first portion of the bonding portion is a second surface in contact with the second surface of the first mask. You may include more parts.

In the fifth aspect of the present disclosure, in the mask according to the fourth aspect described above, the width of the second surface portion of the first portion of the bonding portion may be 3 μm or more.

In a sixth aspect of the present disclosure, in the mask according to each of the above-described first aspect to the fifth aspect, the peripheral region of the second mask is the third from the fourth surface side of the second mask. It includes a second hole concave toward the surface, and the second portion of the joint portion may further include a hole portion located inside the second hole of the peripheral region of the second mask.

In a seventh aspect of the present disclosure, in the mask according to the sixth aspect described above, the second hole in the peripheral region of the second mask penetrates from the fourth surface side to the third surface side of the second mask. You can do it.

In the eighth aspect of the present disclosure, in the mask according to the sixth aspect or the seventh aspect described above, the second hole in the peripheral region of the second mask may have a dimension of 10 μm or more and 200 μm or less. .

In a ninth aspect of the present disclosure, in the mask according to each of the above-described sixth aspect to the eighth aspect, the shape of the second hole in the peripheral region of the second mask is When viewed along the normal direction of the fourth surface, it may have a circle or a rectangle.

A tenth aspect of the present disclosure is in the mask according to each of the above-described first aspect to the above-described ninth aspect, wherein the side surface of the first mask includes a protrusion protruding toward the second mask positioned in the opening portion. You may have it.

In the eleventh aspect of the present disclosure, in the mask according to each of the tenth aspect from the first aspect described above, the side surface of the first mask may include a rough surface having an arithmetic mean roughness of 0.12 μm or more. .

In a twelfth aspect of the present disclosure, in the mask according to each of the eleventh aspects from the first aspect described above, the thickness of the first mask may be 250 μm or more and 1000 μm or less.

In the thirteenth aspect of the present disclosure, in the mask according to each of the above-described first aspect to the above-described twelfth aspect, the thickness of the second mask may be 20 μm or less.

In a fourteenth aspect of the present disclosure, in the mask according to each of the thirteenth aspect from the first aspect described above, the bonding portion may include a plating layer.

A fifteenth aspect of the present disclosure is a first mask including an opening, a first surface, a second surface positioned on the opposite side of the first surface, and extending from the first surface to the second surface, and the A first mask preparation step of preparing a first mask having a side surface defining an opening, and a third surface and the first located at the opening of the first mask and located at a side of the first surface of the first mask. A second mask including a fourth surface positioned on the second surface side of the mask, and having an effective region including a first hole penetrating through the second mask, and a peripheral region positioned at a periphery of the effective region 2 A second mask preparation process of preparing a mask, a first portion including at least a side portion contacting the side surface of the first mask and a first surface portion contacting the first surface of the first mask, and the first 2 This is a method of manufacturing a mask including a bonding portion forming step of forming a bonding portion having a second portion including at least a fourth surface portion in contact with the fourth surface of the mask by a plating treatment.

In a sixteenth aspect of the present disclosure, in the method for manufacturing a mask according to the fifteenth aspect described above, in the step of forming the bonding portion, forming the second mask and a photosensitive layer covering the substrate on a substrate provided with the second mask A step of disposing the first mask on the photosensitive layer on the substrate so that the second mask is positioned in the opening of the first mask, and the effective region of the second mask among the photosensitive layer A portion positioned on the photosensitive layer remains, a portion positioned on the peripheral region of the second mask is removed, and a portion positioned between the first mask and the substrate of the photosensitive layer is partially removed As much as possible, a process of exposing and developing the photosensitive layer, a plating solution is brought into contact with the side surface of the first mask and the peripheral region of the second mask, and the photosensitive layer between the first mask and the substrate is You may have a step of supplying the plating liquid so that the plating liquid enters the removed space, and forming the junction.

In a seventeenth aspect of the present disclosure, in the method for manufacturing a mask according to the fifteenth aspect or the sixteenth aspect described above, the first mask preparation step is made of metal, and the first surface and the first surface are You may have a step of preparing a plate member including a second surface positioned on the opposite side, and a step of forming the opening in the plate member by wet etching the plate member from the first surface side and the second surface side. .

In an eighteenth aspect of the present disclosure, in the method for manufacturing a mask according to each of the above-described fifteenth aspect to the seventeenth aspect, in the first mask preparation step, a sandblast treatment is applied to the side surface of the first mask. You may have a process to implement.

The nineteenth aspect of the present disclosure may be a mask manufactured by the method of manufacturing a mask according to each of the eighteenth aspect from the fifteenth aspect described above.

According to the embodiment of the present disclosure, separation of the bonding portion from the first mask or the second mask can be suppressed.

1 is a diagram showing a vapor deposition apparatus including a mask apparatus according to an embodiment of the present disclosure.
FIG. 2 is a cross-sectional view showing an organic EL display device manufactured using the mask device shown in FIG. 1.
3 is a plan view showing a first mask of the mask device.
4 is a plan view showing a second mask of the mask device.
5 is a plan view showing an enlarged second mask.
6 is a cross-sectional view of the second mask of FIG. 5 taken along line VI-VI.
7 is a plan view showing a case where a mask including a first mask and a second mask is viewed from the second surface side.
8 is a cross-sectional view of the mask of FIG. 7 taken along line VIII-VIII.
9 is an enlarged cross-sectional view illustrating the mask of FIG. 8.
10 is a diagram showing a first mask preparation step of preparing a first mask.
11 is a diagram showing a first mask preparation step of preparing a first mask.
12 is a diagram showing a first mask preparation step of preparing a first mask.
13 is a diagram showing a second mask preparation step of preparing a second mask.
14 is a diagram showing a second mask preparation step of preparing a second mask.
15 is a diagram showing a second mask preparation step of preparing a second mask.
16 is a diagram showing a bonding portion forming step of forming a bonding portion.
17 is a diagram showing a bonding portion forming step of forming a bonding portion.
18 is a diagram showing a bonding portion forming step of forming a bonding portion.
19 is a diagram showing a bonding portion forming step of forming a bonding portion.
Fig. 20 is a diagram showing an aspect in which an external force is applied to a mask having no first surface portion of the first portion of the bonding portion.
21 is a diagram showing a mode in which an external force is applied to a mask according to an embodiment of the present disclosure.
22 is a diagram illustrating a modified example of the second mask preparation process.
23 is a diagram illustrating a modified example of the second mask preparation process.
24 is a diagram illustrating a modified example of the second mask preparation process.
25 is a diagram illustrating a modified example of the second mask preparation process.
26 is a diagram showing a modified example of the bonding portion forming step.
27 is a diagram showing a modified example of the bonding portion forming step.
28 is a diagram showing a modification of the first mask.
29 is a diagram illustrating a modified example of a mask.

In the present specification and the drawings, unless otherwise specified, terms such as "plate", "sheet", and "film" are based only on differences in names and are not distinguished from each other. For example, a "plate" is a concept including a member which can be called a sheet or a film. In addition, "surface (sheet surface, film surface)" refers to a target plate-like member (sheet-like member, film-like member) in the case where the target plate-like member (sheet-like, film-like) is viewed as a whole and in a large scale. Refers to the plane that coincides with the plane direction of In addition, the normal direction used for a plate-like (sheet-like, film-like) member refers to a normal direction with respect to the surface (sheet-like, film-like) of the member. In addition, the terms used in this specification, such as terms such as ``parallel'' or ``orthogonal'', and values of lengths and angles, which specify shapes and geometric conditions, and their degree, are not bound by a strict meaning. In this case, it will be interpreted by including the range to which the same function can be expected.

In the present specification and the drawings, a certain member or a certain configuration, such as a certain region, is ``upper (or under)'', ``upper (or lower)'', or ``at the top (or lower)'' of another member or other configuration such as another region Above (or below)”, unless otherwise specified, not only the case where one element is directly in contact with another element, but also the case where a separate element is included between one element and another element. I will interpret it. In addition, unless otherwise specified, explanation may be made using a phrase such as up (or upper or upper) or lower (or lower or lower), but the vertical direction may be reversed.

In the present specification and the drawings, unless otherwise specified, the same parts or parts having the same function are denoted by the same reference numerals or similar numerals, and the repetitive description thereof may be omitted. In addition, the dimensional ratios in the drawings may be different from the actual ratios for convenience of explanation, or a part of the configuration may be omitted from the drawings.

In the present specification and the drawings, unless otherwise specified, it may be combined with other embodiments or modifications to the extent that contradictions do not occur. In addition, other embodiments, and other embodiments and modifications may be combined within a range in which contradictions do not occur. In addition, variations may be combined within a range in which contradictions do not occur.

In the present specification and the drawings, in the case of starting a plurality of steps with respect to a method such as a manufacturing method, unless otherwise specified, other steps not disclosed may be performed between the disclosed steps. In addition, the order of the disclosed process is arbitrary as long as contradiction does not occur.

In the present specification and the drawings, unless otherwise specified, the numerical range expressed by the symbol "-" includes the numerical value placed before and after the symbol "-". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less".

In this embodiment, an example will be described in which the mask is a vapor deposition mask used to pattern a vapor deposition material on a substrate in a desired pattern. The evaporation mask is used, for example, to pattern an organic material onto a substrate in a desired pattern when manufacturing an organic EL display device. However, the use of the mask of the present disclosure is not particularly limited, and the mask of the present disclosure can be used in various applications. For example, the mask of the present disclosure may be used as a metal mesh filter or a screen printing plate.

Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, the embodiment described below is an example of the embodiment of this disclosure, and this disclosure is limited only to these embodiments and is not interpreted.

First, a vapor deposition apparatus 90 that performs a vapor deposition treatment of depositing a vapor deposition material on an object is described with reference to FIG. 1. As shown in FIG. 1, the vapor deposition apparatus 90 may include a vapor deposition source (eg, a crucible 94), a heater 96, and a mask device 10 therein. In addition, the vapor deposition apparatus 90 further includes an exhaust means for making the inside of the vapor deposition apparatus 90 into a vacuum atmosphere. The crucible 94 accommodates a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 in a vacuum atmosphere. The mask device 10 may be disposed so as to face the crucible 94.

Hereinafter, the mask device 10 will be described. As shown in FIG. 1, the mask device 10 may be provided with at least a mask 12 having a first mask 20 and a plurality of second masks 30. The mask device 10 may further include a frame 15 supporting the mask 12. The frame 15 may support the mask 12 in a state in which the mask 12 is stretched in the plane direction so that the mask 12 does not bend. The mask 12 may be fixed to the frame 15 by welding, for example.

As shown in FIG. 1, the mask device 10 is a vapor deposition device 90 so that the mask 12 faces a substrate, for example, an organic EL substrate 92, which is an object to which the vapor deposition material 98 is attached. ) Are placed within. In the following description, a surface of the mask 12 located on the side of the organic EL substrate 92 is referred to as a first surface, and a surface located on the opposite side of the first surface, that is, on the side of the evaporation source, is also referred to as a second surface. For example, in FIG. 1, reference numeral 201 denotes a first surface of the first mask 20, and reference numeral 202 denotes a second surface of the first mask 20. In addition, for the side of the second mask 30, in order to distinguish the first side 201 and the second side 202 of the first mask 20, a different name from the first side and the second side is given. Grant. Specifically, a surface of the second mask 30 located on the side of the evaporation source is referred to as a third surface, and a surface located on the opposite side of the third surface, that is, on the side of the evaporation source, is referred to as a fourth surface.

The mask device 10 may include a magnet 93 disposed on a surface of the organic EL substrate 92 opposite to the mask 12 as shown in FIG. 1. By providing the magnet 93, the mask 12 can be pulled to the magnet 93 side by magnetic force, and the mask 12 can be brought into close contact with the organic EL substrate 92. Thereby, it is possible to suppress the occurrence of shadows in the vapor deposition process, and the dimensional accuracy and positional accuracy of the vapor deposition material 98 adhered to the organic EL substrate 92 can be improved. Further, the mask 12 may be brought into close contact with the organic EL substrate 92 using an electrostatic chuck using electrostatic force.

As shown in FIG. 1, the first mask 20 of the mask 12 includes a first surface 201 and a second surface 202 positioned on the opposite side of the first surface 201. It has 21 and a plurality of openings 22 formed in the plate member 21. Each of the plurality of second masks 30 is a first mask when the first mask 20 and the second mask 30 are viewed along the normal direction of the second surface 202 of the first mask 20. It is located in the opening 22 of (20). The second mask 30 has a plurality of first holes 32 penetrating the second mask 30.

In the evaporation apparatus 90 shown in FIG. 1, the evaporation material 98 evaporated from the crucible 94 and reached the mask apparatus 10 is the opening 22 of the first mask 20 and the second mask. It is attached to the organic EL substrate 92 through the first hole 32 of (30). Accordingly, the evaporation material 98 is applied to the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the opening 22 of the first mask 20 and the first hole 32 of the second mask 30. You can form a curtain on it.

FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition apparatus 90 of FIG. 1. The organic EL display device 100 may include an organic EL substrate 92 and a vapor deposition layer 99 including a vapor deposition material 98 provided in a pattern. The plurality of vapor deposition layers 99 included in one organic EL display device 100 are formed of a plurality of first masks 30 of one second mask 30 positioned in one opening 22 in the first mask 20. It is composed of a vapor deposition material attached to the organic EL substrate 92 through the hole 32.

In addition, in the organic EL display device 100 of FIG. 2, an electrode or the like for applying a voltage to the vapor deposition layer 99 is omitted. In addition, after the deposition process of providing the deposition layer 99 in a pattern on the organic EL substrate 92, other components of the organic EL display device will be further provided in the organic EL display device 100 of FIG. 2. I can. Accordingly, the organic EL display device 100 of FIG. 2 may be referred to as an intermediate body of the organic EL display device.

In addition, when it is desired to perform color display by a plurality of colors, evaporation apparatuses 90 equipped with mask apparatuses 10 corresponding to each color are prepared respectively, and the organic EL substrate 92 is placed in each evaporation apparatus 90 ) In order. Thereby, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue can be sequentially deposited on the organic EL substrate 92.

By the way, the evaporation process may be performed inside the evaporation apparatus 90 which becomes a high temperature atmosphere. In this case, during the evaporation process, the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 held inside the evaporation apparatus 90 are also heated. At this time, the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 exhibit a behavior of dimensional change based on respective coefficients of thermal expansion. In this case, if the coefficients of thermal expansion between the first mask 20, the second mask 30, or the frame 15 and the organic EL substrate 92 are significantly different, a positional shift due to the difference in dimensional changes occurs, As a result, the dimensional accuracy and positional accuracy of the vapor deposition material adhered on the organic EL substrate 92 deteriorate.

In order to solve such a problem, it is preferable that the coefficients of thermal expansion of the first mask 20, the second mask 30, and the frame 15 are equal to the coefficients of thermal expansion of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the first mask 20, the second mask 30, and the frame 15. have. For example, as a material of the plate member constituting the first mask 20 and the second mask 30, an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used. As a specific example of an iron alloy containing nickel, an Invar material containing 34% by mass or more and 38% by mass or less of nickel, a super Invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less nickel, 38 And a low thermal expansion Fe-Ni-based plating alloy containing nickel of not less than mass% and not more than 54 mass%.

In addition, when the temperature of the first mask 20, the second mask 30, the frame 15, and the organic EL substrate 92 does not reach a high temperature during the evaporation treatment, the first mask 20 2 It is not necessary in particular to set the thermal expansion coefficient of the mask 30 and the frame 15 to a value equal to the thermal expansion coefficient of the organic EL substrate 92. In this case, as a material constituting the first mask 20 and the second mask 30, a material other than the above-described iron alloy may be used. For example, an iron alloy other than the iron alloy containing nickel, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, an iron alloy called stainless steel can be used, for example. Further, alloys other than iron alloys, such as nickel or nickel-cobalt alloy, may be used.

Next, the first mask 20 will be described in detail. 3 is a plan view showing the first mask 20. The plurality of openings 22 of the first mask 20 are arranged along the first direction D1 and the second direction D2, as shown in FIG. 3. Both the first direction D1 and the second direction D2 are directions parallel to the plane direction of the plate member 21 of the first mask 20. In this embodiment, the second direction D2 is orthogonal to the first direction D1.

One opening 22 of the first mask 20 corresponds to a display area of one organic EL display device 100. By providing a plurality of openings 22 in one mask device 10, multi-sided deposition of the organic EL display device 100 becomes possible.

Next, the second mask 30 will be described in detail. 4 is a plan view showing a plurality of second masks 30. As shown in FIG. 4, the plurality of second masks 30 are arranged at a pitch corresponding to the plurality of openings 22 of the first mask 20. One second mask 30 corresponds to a display area of one organic EL display device 100.

Each second mask 30 includes a metal layer 31 and a plurality of first holes 32 penetrating the metal layer 31. The metal layer 31 includes, for example, a plating layer formed by a plating treatment. In addition, in FIG. 4, an example in which the plurality of first holes 32 are arranged in the first direction D1 and the second direction D2 like the first mask 20 is shown, but the first hole 32 The arrangement direction is not particularly limited. For example, the plurality of first holes 32 may be arranged in a direction inclined with respect to the first direction D1 and the second direction D2.

5 is a plan view showing an enlarged second mask 30. 6 is a cross-sectional view of the second mask 30 of FIG. 5 taken along line VI-VI. The second mask 30 has an effective region 36 including the plurality of first holes 32 described above, and a peripheral region 37 positioned at the periphery of the effective region 36. The outline of the effective area 36 has, for example, an approximately rectangular shape in plan view, and more precisely, an approximately rectangular shape in plan view, as shown in FIG. 5. Further, although not shown, the effective area 36 may have various shapes of outlines depending on the shape of the display area of the organic EL substrate 92. For example, the outline of the effective area 36 may have a circular shape. The peripheral region 37 is a region in which a bonding portion 40 to be described later for bonding the first mask 20 and the second mask 30 is provided.

As shown in FIG. 6, the second mask 30 includes a third surface 301 and a fourth surface 302 positioned on the opposite side of the third surface 301. The third surface 301 is located on the first surface 201 side of the first mask 20, and the fourth surface 302 is located on the second surface 202 side of the first mask 20. . That is, as in the case of the first mask 20, the third surface 301 of the second mask 30 is a surface facing the organic EL substrate 92, and the fourth surface 302 is located on the side of the evaporation source. This is the side. 5 is a plan view showing a case where the second mask 30 is viewed from the fourth surface 302 side.

As shown in FIG. 5, the peripheral region 37 of the second mask 30 is a plurality of second masks that are concave from the fourth surface 302 side to the third surface 301 side. 2 holes 33 may be included. The 2nd hole 33 is a hole into which the junction part 40 mentioned later enters. By allowing the bonding portion 40 to enter the second hole 33, a contact area between the second mask 30 and the bonding portion 40 can be increased.

In the example shown in FIG. 6, the second hole 33 of the peripheral region 37 penetrates from the fourth surface 302 side of the second mask 30 to the third surface 301 side. However, as shown in the modified example mentioned later, the 2nd hole 33 does not have to penetrate to the 3rd surface 301 side.

Next, the shape of the first hole 32 in plan view will be described. The first hole 32 has a shape corresponding to the vapor deposition layer 99 formed on the organic EL substrate 92 when viewed in plan. For example, as shown in FIG. 5, the shape of the 1st hole 32 has a circular shape in plan view. Although not shown, the first hole 32 may have other shapes such as an ellipse and a polygon.

Next, the shape of the second hole 33 will be described in plan view. As described above, the second hole 33 is a hole into which the bonding portion 40 to be described later enters. The bonding portion 40 includes a plating layer formed by plating treatment, as described later. It is preferable that the 2nd hole 33 is comprised so that a plating solution may penetrate into the 2nd hole 33 at the time of a plating process easily. For example, in the in-plane direction of the fourth surface 302 of the second mask 30, it is preferable that the size S2 of the second hole 33 is larger than the size S1 of the first hole 32. Further, although not shown, the size S2 of the second hole 33 may be smaller than the size S1 of the first hole 32. Further, the size S2 of the second hole 33 may be the same as the size S1 of the first hole 32.

The dimension S1 of the first hole 32 is determined based on the pixel density of the organic EL substrate 92 and the like. The dimension S1 of the first hole 32 is, for example, 10 µm or more and 60 µm or less. In addition, the dimensions, widths, lengths, thicknesses, etc. of the first hole 32 and other constituent elements of the mask 12 are shown in the cross-sectional image of the mask 12 obtained using a scanning microscope, unless otherwise specified. It is calculated on the basis of.

The dimension S2 of the second hole 33 may be 10 µm or more, 20 µm or more, 30 µm or more, or 40 µm or more. By increasing the size S2 of the second hole 33, the plating solution easily penetrates the second hole 33 during the plating treatment for forming the bonding portion 40. Further, the size S2 of the second hole 33 may be 200 µm or less, 150 µm or less, 120 µm or less, or 100 µm or less. By reducing the size S2 of the second hole 33, the number of the second holes 33 in the peripheral region 37 can be increased, and the contact area between the second mask 30 and the junction 40 Can increase.

Further, the range of the dimension S2 of the second hole 33 may be determined by a combination of any one of the plurality of upper limit candidate values described above and any one of the plurality of lower limit candidate values described above. For example, the range of the dimension S2 of the second hole 33 may be 10 µm or more and 200 µm or less, 20 µm or more and 150 µm or less, 30 µm or more and 120 µm or less, and 40 µm or more and 100 µm or less. You can open it. In addition, the range of the dimension S2 of the second hole 33 may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the dimension S2 of the second hole 33 may be 10 µm or more and 30 µm or less, 10 µm or more and 20 µm or less, 20 µm or more and 40 µm or less, and 20 µm or more and 30 µm or less. You can open it. In addition, the range of the dimension S2 of the second hole 33 may be determined by a combination of any two of the plurality of upper limit candidate values described above. For example, the range of the dimension S2 of the second hole 33 may be 100 µm or more and 150 µm or less, 100 µm or more and 120 µm or less, 120 µm or more and 200 µm or less, and 150 µm or more and 200 µm or less. You can open it.

In addition, as for the shape of the second hole 33 in plan view, the bonding portion 40 is from the second hole 33 of the second mask 30 on the fourth surface 302 side of the second mask 30. It may be a shape that is easy to suppress separation. For example, the second hole 33 may include a corner portion having an inner angle of less than 90 degrees. For example, the shape of the second hole 33 may have a triangular shape, a star shape, or a parallelogram shape.

In the example shown in FIG. 5, a plurality of, for example, two second holes 33 in the direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37 Are arranged. However, the arrangement method of the second holes 33 is not particularly limited. For example, one second hole 33 may exist in the direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37. In addition, three or more second holes 33 may be arranged in a direction from the boundary between the effective region 36 and the peripheral region 37 to the outer edge of the peripheral region 37.

Next, the shape of the first hole 32 in the cross-sectional view will be described. As shown in Fig. 6, the first hole 32 may include a portion in which the dimension S1 is enlarged from the third surface 301 side to the fourth surface 302 side. Thereby, it is possible to suppress the occurrence of shadows in the evaporation process. In addition, the shape of the first hole 32 in the cross-sectional view is not limited to the shape shown in FIG. 6.

Next, the shape of the second hole 33 in the cross-sectional view will be described. In the example shown in FIG. 6, the dimension S2 of the second hole 33 is the same on the third surface 301 side and the fourth surface 302 side. Although not shown, the second hole 33, like the first hole 32, includes a portion in which the dimension S2 expands from the third side 301 side to the fourth side 302 side. do. Further, although not shown, the second hole 33 may include a portion in which the dimension S2 is reduced from the third surface 301 side to the fourth surface 302 side. Thereby, it becomes easy to suppress that the bonding part 40 separates from the 2nd hole 33 of the 2nd mask 30 on the 4th surface 302 side of the 2nd mask 30.

Next, a state in which the first mask 20 and the second mask 30 are combined will be described. 7 is a plan view showing a case where the mask 12 including the first mask 20 and the second mask 30 is viewed from the second surface 202 side. As shown in FIG. 7, the mask 12 includes a first mask 20 including a plurality of openings 22, and a plurality of masks positioned in the plurality of openings 22 of the first mask 20, respectively. A second mask 30 is provided. Further, the mask 12 further includes a bonding portion 40 for bonding the first mask 20 and the second mask 30 to each other.

8 is a cross-sectional view of the mask 12 of FIG. 7 taken along line VIII-VIII. As shown in FIG. 8, the plate member 21 of the first mask 20 has a side surface 203 extending from the first surface 201 to the second surface 202. The above-described opening 22 is defined by the side surface 203.

In FIG. 8, reference numeral T10 denotes the thickness of the plate member 21 of the first mask 20, and reference numeral T20 denotes the thickness of the metal layer 31 of the second mask 30.

The thickness T10 of the plate member 21 may be, for example, 200 µm or more, 300 µm or more, 400 µm or more, or 500 µm or more. In addition, the thickness T10 of the plate member 21 may be, for example, 1000 µm or less, 800 µm or less, 700 µm or less, and 600 µm or less. The range of the thickness T10 of the plate member 21 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above, for example, 200 It may be not less than µm and not more than 1000 µm, not less than 300 µm and not more than 800 µm, not less than 400 µm and not more than 700 µm, not less than 500 µm and not more than 600 µm, and not less than 500 µm and not more than 800 µm. In addition, the range of the thickness T10 of the plate member 21 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 200 µm or more and 500 µm or less, and 200 µm or more and 400 It may be equal to or less than µm, 300 µm or more and 500 µm or less, and 300 µm or more and 400 µm or less. In addition, the range of the thickness T10 of the plate member 21 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 600 μm or more and 1000 μm or less, and 600 μm or more and 800 It may be less than or equal to µm, not less than 700 µm and not more than 1000 µm, and not less than 700 µm and not more than 800 µm.

Further, the thickness T20 of the metal layer 31 may be, for example, 4 µm or more, 5 µm or more, 7 µm or more, or 10 µm or more. In addition, the thickness T20 of the metal layer 31 may be, for example, 20 µm or less, 18 µm or less, 15 µm or less, or 12 µm or less. The range of the thickness T20 of the metal layer 31 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above, for example, 4 μm. It may be 20 µm or less, 5 µm or more and 18 µm or less, 7 µm or more and 15 µm or less, or 10 µm or more and 12 µm or less. In addition, the range of the thickness T20 of the metal layer 31 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 4 µm or more and 10 µm or less, and 4 µm or more and 7 µm. It may be as follows, 5 µm or more and 10 µm or less, and 5 µm or more and 7 µm or less. In addition, the range of the thickness T20 of the metal layer 31 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 12 µm or more and 20 µm or less, and 12 µm or more and 18 µm. It may be as follows, 15 µm or more and 20 µm or less, and 15 µm or more and 18 µm or less.

As shown in FIG. 8, the bonding part 40 is comprised integrally with the 1st part 41 and the 1st part 41 in contact with the 1st mask 20, and the 2nd mask 30 It has a second portion 46 in contact with the peripheral region 37.

The first portion 41 includes at least a side portion 42 and a first surface portion 43. The side portion 42 is a portion of the first portion 41 in contact with the side surface 203 of the first mask 20. In addition, the first surface portion 43 is a portion of the first portion 41 in contact with the first surface 201 of the first mask 20. When the first portion 41 comes into contact with the first mask 20 on two sides, the side surface 203 and the first surface 201 of the first mask 20, a force is applied to the mask 12 from the outside. When applied, the force generated between the first mask 20 and the first portion 41 of the bonding portion 40 can be distributed in a plurality of directions. Thereby, it is possible to suppress the first part 41 from being separated from the first mask 20. As shown in FIG. 8, the first portion 41 may further include a second surface portion 44 in contact with the second surface 202 of the first mask 20.

The second portion 46 includes at least a fourth surface portion 47 in contact with the fourth surface 302 of the peripheral region 37 of the second mask 30. In addition, when the second hole 33 is formed in the peripheral region 37, the second portion 46 may further include a hole portion 48 located inside the second hole 33. . Since the second portion 46 includes the hole portion 48, a contact area between the peripheral region 37 of the second mask 30 and the second portion 46 of the junction 40 may be increased. Accordingly, it is possible to suppress the second portion 46 from being separated from the peripheral region 37 of the second mask 30.

9 is a cross-sectional view showing the mask 12 of FIG. 8 on an enlarged scale. As shown in FIG. 9, the side surface 203 of the first mask 20 may have a protrusion 203t protruding toward the second mask 30 positioned in the opening 22. Such protrusions 203t are wet-etched from both the first and second surfaces 201 and 202 of the plate member 21 as described later, so that the opening 22 is formed in the plate member 21. It can occur when forming. Since the side surface 203 of the first mask 20 has such a protruding portion 203t, the side portion 42 of the first portion 41 of the bonding portion 40 is compared with the case where the side surface 203 is a flat surface. The contact area between the and the side surface 203 of the first mask 20 may be increased. Thereby, it is possible to suppress that the first portion 41 of the bonding portion 40 is separated from the side surface 203 of the first mask 20. In addition, the anchor effect of the protrusion 203t of the side surface 203 of the first mask 20 with respect to the side portion 42 of the first part 41 of the joint 40 is also the first part 41 1 It can act to suppress separation from the side surface 203 of the mask 20.

In FIG. 9, reference numeral R1 denotes a protruding length of the protruding portion 203t of the side surface 203 with respect to the first surface 201. The protruding length R1 of the protruding portion 203t may be, for example, 10 µm or more, 20 µm or more, 30 µm or more, or 40 µm or more. By increasing the protruding length R1 of the protruding portion 203t, the anchor effect can be enhanced. Further, the protruding length R1 of the protruding portion 203t may be 100 µm or less, 80 µm or less, 65 µm or less, or 50 µm or less.

In addition, the range of the protrusion length R1 of the protrusion 203t may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 10 µm or more and 100 µm or less, 20 µm or more and 80 µm or less, 30 µm or more and 65 µm or less, and 40 µm or more and 50 µm or less. In addition, the range of the protrusion length R1 of the protrusion 203t may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 10 µm or more and 40 µm or less, and 10 µm or more and 30 It may be not more than µm, not less than 10 µm and not more than 20 µm, not less than 20 µm and not more than 40 µm, and not less than 20 µm and not more than 30 µm. In addition, the range of the protrusion length R1 of the protrusion 203t may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 50 µm or more and 100 µm or less, and 50 µm or more and 80 It may be less than or equal to µm, not less than 65 µm and not more than 100 µm, not less than 65 µm and not more than 80 µm, and may be not less than 80 µm and not more than 100 µm.

Preferably, as shown in Fig. 9, the side surface 203 of the first mask 20 includes a rough surface 203s having irregularities. In this case, since the side portion 42 of the first portion 41 of the bonding portion 40 may enter the unevenness of the rough surface 203s of the side surface 203, the side surface 203 of the first mask 20 It is possible to further increase the adhesion of the side portion 42 of the junction 40. Thereby, it is possible to suppress that the first portion 41 of the bonding portion 40 is separated from the side surface 203 of the first mask 20.

The surface roughness of the rough surface 203s of the side surface 203 is the arithmetic mean roughness Sa. The arithmetic mean roughness of the rough surface 203s is calculated by using a measuring device conforming to ISO25178. The arithmetic mean roughness of the rough surface 203s may be 0.12 µm or more, 0.14 µm or more, 0.17 µm or more, or 0.19 µm or more. By increasing the arithmetic mean roughness of the rough surface 203s of the side surface 203, the anchor effect can be enhanced. In addition, the arithmetic average roughness of the rough surface 203s may be 0.28 µm or less, 0.25 µm or less, 0.23 µm or less, or 0.21 µm or less.

In addition, the range of the arithmetic mean roughness of the rough surface 203s may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 0.12 µm or more and 0.28 µm or less, 0.14 µm or more and 0.25 µm or less, 0.17 µm or more and 0.23 µm or less, or 0.19 µm or more and 0.21 µm or less. In addition, the range of the arithmetic mean roughness of the rough surface 203s may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 0.12 µm or more and 0.19 µm or less, and 0.12 µm or more and 0.17 Μm or less, 0.12 µm or more and 0.14 µm or less, 0.14 µm or more and 0.19 µm or less, or 0.14 µm or more and 0.17 µm or less may be used. In addition, the range of the arithmetic mean roughness of the rough surface 203s may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 0.21 µm or more and 0.28 µm or less, and 0.21 µm or more and 0.25 It may be equal to or less than µm, 0.23 µm or more and 0.28 µm or less, 0.23 µm or more and 0.25 µm or less, or 0.25 µm or more and 0.28 µm or less.

In FIG. 9, reference numeral T1 denotes the thickness of the side portion 42 of the first portion 41 of the bonding portion 40 positioned on the side surface 203 of the first mask 20. Further, reference numeral T2 denotes the thickness of the first surface portion 43 of the first portion 41 of the bonding portion 40 positioned on the first surface 201 of the first mask 20. Further, reference numeral T3 denotes the thickness of the second surface portion 44 of the first portion 41 of the bonding portion 40 positioned on the second surface 202 of the first mask 20.

The thickness T1 of the side portion 42 may be, for example, 20 µm or more, 30 µm or more, 40 µm or more, or 50 µm or more. In addition, the thickness T1 of the side surface portion 42 may be 110 µm or less, 90 µm or less, 70 µm or less, or 60 µm or less, for example. The range of the thickness T1 of the side portion 42 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above, for example 20 It may be not less than µm and not more than 110 µm, not less than 30 µm and not more than 90 µm, not less than 40 µm and not more than 70 µm, not less than 40 µm and not more than 90 µm, and not less than 50 µm and not more than 60 µm. In addition, the range of the thickness T1 of the side portion 42 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 20 µm or more and 50 µm or less, and 20 µm or more and 40 It may be less than or equal to µm, not less than 30 µm and not more than 50 µm, and not less than 30 µm and not more than 40 µm. Further, the range of the thickness T1 of the side portion 42 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 60 μm or more and 110 μm or less, and 60 μm or more and 90 It may be equal to or less than µm, 70 µm or more and 110 µm or less, and may be 70 µm or more and 90 µm or less.

The thickness T2 of the first surface portion 43 may be, for example, 3 µm or more, 5 µm or more, 7 µm or more, or 10 µm or more. Further, the thickness T2 of the first surface portion 43 may be, for example, 30 µm or less, 25 µm or less, 20 µm or less, or 15 µm or less. The range of the thickness T2 of the first surface portion 43 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 3 µm or more and 30 µm or less, 5 µm or more and 25 µm or less, 7 µm or more and 20 µm or less, or 10 µm or more and 15 µm or less. In addition, the range of the thickness T2 of the first surface portion 43 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 3 μm or more and 10 μm or less, or 3 μm. It may be 7 µm or less, 5 µm or more and 10 µm or less, and 5 µm or more and 7 µm or less. Further, the range of the thickness T2 of the first surface portion 43 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 15 μm or more and 30 μm or less, or 15 μm. It may be not less than 25 µm, not less than 20 µm and not more than 30 µm, and not less than 20 µm and not more than 25 µm.

The thickness T3 of the second surface portion 44 may be, for example, 30 µm or more, 40 µm or more, 50 µm or more, or 60 µm or more. Further, the thickness T3 of the second surface portion 44 may be 150 µm or less, 120 µm or less, 90 µm or less, or 70 µm or less, for example. The range of the thickness T3 of the second surface portion 44 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 30 µm or more and 150 µm or less, 40 µm or more and 120 µm or less, 50 µm or more and 90 µm or less, or 60 µm or more and 70 µm or less. In addition, the range of the thickness T3 of the second surface portion 44 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 30 µm or more and 60 µm or less, and 30 µm It may be not less than 50 µm, not less than 40 µm and not more than 60 µm, and not less than 40 µm and not more than 50 µm. In addition, the range of the thickness T3 of the second surface portion 44 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 70 µm or more and 150 µm or less, and 70 µm. It may be 120 µm or less, 90 µm or more and 150 µm or less, and 90 µm or more and 120 µm or less.

The surface of the first surface portion 43 of the first portion 41 of the bonding portion 40 may be positioned on the same plane as the third surface 301 of the second mask 30. The surface of the first surface portion 43 is between the substrate 65 and the first surface 201 of the first mask 20, which will be described later, which are the basis for manufacturing the second mask 30 by plating treatment. This may occur when the first surface portion 43 is formed by infiltrating the plating solution into the material. In addition, "on the same plane" means that the distance T4 between the surface of the first surface portion 43 and the third surface 301 of the second mask 30 in the thickness direction of the second mask 30 is zero. This concept includes not only the case, but also the case where the distance T4 is 15 μm or less, 10 μm or less, or 5 μm or less.

In FIG. 9, reference numeral T5 denotes the thickness of the fourth surface portion 47 of the second portion 46 of the bonding portion 40 positioned on the fourth surface 302 of the second mask 30. The thickness T5 of the fourth surface portion 47 may be, for example, 30 µm or more, 40 µm or more, 50 µm or more, or 60 µm or more. Further, the thickness T5 of the fourth surface portion 47 may be, for example, 150 µm or less, 120 µm or less, 90 µm or less, or 70 µm or less. The range of the thickness T5 of the fourth surface portion 47 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 30 µm or more and 150 µm or less, 40 µm or more and 120 µm or less, 50 µm or more and 90 µm or less, or 60 µm or more and 70 µm or less. In addition, the range of the thickness T5 of the fourth surface portion 47 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 30 µm or more and 60 µm or less, and 30 µm It may be not less than 50 µm, not less than 40 µm and not more than 60 µm, and not less than 40 µm and not more than 50 µm. In addition, the range of the thickness T5 of the fourth surface portion 47 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 70 µm or more and 150 µm or less, and 70 µm It may be 120 µm or less, 90 µm or more and 150 µm or less, and 90 µm or more and 120 µm or less. In addition, as shown in FIG. 9, the fourth surface portion 47 may include a portion in which the thickness T5 increases from the first mask 20 side to the second mask 30 side.

In FIG. 9, reference numeral W2 denotes the width of the first surface portion 43 of the first portion 41 of the bonding portion 40. The width W2 of the first surface portion 43 is the first surface portion of the first portion 41 of the bonding portion 40 from the end of the first surface 201 on the opening 22 side of the first mask 20 It is the distance in the in-plane direction of the 1st surface 201 of the 1st mask 20 to the end of (43). The width W2 of the first surface portion 43 may be 3 µm or more, 5 µm or more, 7 µm or more, or 10 µm or more. By increasing the width W2 of the first surface portion 43, the adhesion of the first portion 41 of the bonding portion 40 to the first mask 20 can be improved. Further, the width W2 of the first surface portion 43 may be 500 µm or less, 250 µm or less, 100 µm or less, or 30 µm or less.

The range of the width W2 of the first surface portion 43 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 3 µm or more and 500 µm or less, 5 µm or more and 250 µm or less, 7 µm or more and 100 µm or less, or 10 µm or more and 30 µm or less. In addition, the range of the width W2 of the first surface portion 43 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 3 μm or more and 10 μm or less, or 3 μm It may be 7 µm or less, 3 µm or more and 5 µm or less, 5 µm or more and 10 µm or less, and 5 µm or more and 7 µm or less. In addition, the range of the width W2 of the first surface portion 43 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 30 µm or more and 500 µm or less, and 30 µm It may be not less than 250 µm, not less than 100 µm and not more than 500 µm, not less than 100 µm and not more than 250 µm, and not less than 250 µm and not more than 500 µm.

In FIG. 9, reference numeral W3 denotes the width of the second surface portion 44 of the first portion 41 of the bonding portion 40. The width W3 of the second surface portion 44 is the second surface portion of the first portion 41 of the bonding portion 40 from the end portion on the opening 22 side of the second surface 202 of the first mask 20 It is the distance in the in-plane direction of the 2nd surface 202 of the 1st mask 20 to the end of (44). The width W3 of the second surface portion 44 may be 3 µm or more, 5 µm or more, 7 µm or more, or 10 µm or more. By increasing the width W3 of the second surface portion 44, it is possible to increase the adhesion of the first portion 41 of the bonding portion 40 to the first mask 20. In addition, the width W3 of the second surface portion 44 may be smaller than the width of the second surface 202, for example, 80 µm or less, 60 µm or less, 40 µm or less, and 20 µm or less. You can open it.

The range of the width W3 of the second surface portion 44 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above. For example, it may be 3 µm or more and 80 µm or less, 5 µm or more and 60 µm or less, 7 µm or more and 60 µm or less, 7 µm or more and 40 µm or less, and 10 µm or more and 20 µm or less. In addition, the range of the width W3 of the second surface portion 44 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 3 μm or more and 10 μm or less, or 3 μm. It may be 7 µm or less, 3 µm or more and 5 µm or less, 5 µm or more and 10 µm or less, and 5 µm or more and 7 µm or less. In addition, the range of the width W3 of the second surface portion 44 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 20 µm or more and 80 µm or less, and 20 µm It may be not less than 60 µm, not less than 40 µm and not more than 80 µm, not less than 40 µm and not more than 60 µm, and not less than 60 µm and not more than 80 µm.

Next, a method of manufacturing the mask 12 will be described. The manufacturing method of the mask 12 includes a first mask preparation process for preparing the first mask 20, a second mask preparation process for preparing the second mask 30, and the first mask 20 and the second mask. A bonding portion forming step of forming a bonding portion 40 bonding the mask 30 is provided. In addition, the order of the 1st mask preparation process and the 2nd mask preparation process is arbitrary.

The first mask preparation process will be described with reference to FIGS. 10 to 12.

First, a plate member 21 made of metal is prepared. The plate member 21 has, for example, an iron alloy containing 30% by mass or more and 38% by mass or less of nickel. Subsequently, as shown in FIG. 10, a first surface resist pattern 50 is provided on the first surface 201 of the plate member 21, and a second surface resist pattern 55 is formed on the second surface 202. ). The first surface resist pattern 50 includes a first surface resist layer 51 and an opening 52 formed in the first surface resist layer 51. The second surface resist pattern 55 similarly includes a second surface resist layer 56 and an opening 57. The opening 52 and the opening 57 are located in a portion of the plate member 21 where the opening 22 is formed.

The first surface resist layer 51 and the second surface resist layer 56 include, for example, a dry film containing a photosensitive resist material such as an acrylic photocurable resin, and the first surface 201 of the plate member 21 and It is obtained by sticking to the second surface 202. In addition, the first surface resist layer 51 and the second surface resist layer 56 are coated with a coating liquid containing a negative photosensitive resist material on the first surface 201 and the second surface of the plate member 21. It may be obtained by applying on (202) and drying the coating liquid. The openings 52 and 57 are formed by exposing and developing the first surface resist layer 51 and the second surface resist layer 56.

Subsequently, the plate member 21 is wet-etched from the first surface 201 side and the second surface 202 side using the first surface resist pattern 50 and the second surface resist pattern 55 as masks. . The recess formed on the first surface 201 side and the recess formed on the second surface 202 side are joined by wet etching, and as shown in FIG. 11, the opening 22 is formed in the plate member 21. Can be formed. In addition, a protrusion 203t may be formed at a position where the concave portion on the first surface 201 side and the concave portion on the second surface 202 of the side surface 203 of the plate member 21 join.

Subsequently, a sandblasting process in which a sandblasting treatment is performed on the side surface 203 of the first mask 20 may be performed. Accordingly, the rough surface 203s can be formed on the side surface 203 of the first mask 20.

The sandblasting process may be performed in a state in which the above-described first surface resist pattern 50 and second surface resist pattern 55 are provided on the plate member 21. On the other hand, as shown in Fig. 11, the first surface resist pattern 50 protrudes toward the opening 22 side rather than the end of the first surface 201, and the second surface resist pattern 55 is similarly formed. It protrudes toward the opening 22 side rather than the end of the two surface 202. For this reason, the arrival of the abrasive B such as sand to the side surface 203 of the first mask 20 may be inhibited by the first surface resist pattern 50 and the second surface resist pattern 55. In consideration of this point, as shown in FIG. 12, the first surface resist layer 53 and the first surface resist layer 53 and the second surface resist layer 56 that are different from the first surface resist layer 51 and the second surface resist layer 56 used in wet etching are used. A sandblasting process may be performed while the two-sided resist layer 58 is provided on the first surface 201 and the second surface 202 of the plate member 21. The end 53e of the first surface resist layer 53 does not protrude toward the opening 22 side compared to the protrusion 203t of the side surface 203 of the first mask 20. Similarly, the end portion 58e of the second surface resist layer 58 does not protrude toward the opening 22 side compared to the protrusion 203t of the side surface 203 of the first mask 20. Thereby, it is possible to suppress the arrival of the abrasive B such as sand to the side surface 203 of the first mask 20 from being inhibited by the first surface resist layer 53 and the second surface resist layer 58. have.

Next, a second mask preparation process will be described with reference to FIGS. 13 to 15.

First, a substrate 65 is prepared. At least the surface of the substrate 65 is preferably made of a conductive material. For example, the substrate 65 is made of stainless steel or the like. Subsequently, as shown in FIG. 13, a first resist pattern 60 is formed on the surface of the substrate 65. The first resist pattern 60 has a first resist layer 61 and a plurality of first openings 62 and a plurality of second openings 63 formed in the first resist layer 61. The first opening 62 is provided in a portion of the substrate 65 where the metal layer 31 of the effective region 36 of the second mask 30 is to be formed. Further, the second opening 63 is provided in a portion of the substrate 65 where the metal layer 31 of the peripheral region 37 of the second mask 30 is to be formed.

Subsequently, as shown in FIG. 14, a plating solution is supplied onto the substrate 65. Thereby, in the first opening 62 and the second opening 63 of the first resist layer 61, the metal layer 31 made of a plated layer generated by electrolytic plating can be formed. The plating solution contains, for example, nickel sulfamate, nickel bromide, or the like. In addition, the plating solution may further contain ferrous sulfamate or the like. After that, as shown in Fig. 15, the first resist pattern 60 is removed. In this way, the second mask 30 having the plurality of first holes 32 and the second holes 33 can be formed on the substrate 65.

Next, the bonding portion forming process will be described with reference to FIGS. 16 to 19.

First, as shown in FIG. 16, a photosensitive layer 71 covering the second mask 30 and the substrate 65 is formed on the substrate 65 on which the second mask 30 is provided. The photosensitive layer 71 may be obtained by attaching a dry film containing a photosensitive resist material to the substrate 65, similarly to the first surface resist layer 51 described above. Further, the photosensitive layer 71 may be obtained by applying a coating liquid containing a negative photosensitive resist material on the substrate 65 and drying the coating liquid.

Subsequently, as shown in FIG. 16, an exposure step of irradiating light to a portion of the photosensitive layer 71 positioned on the effective region 36 of the second mask 30 is performed. In this case, light is not irradiated to a portion of the photosensitive layer 71 located on the peripheral region 37 of the second mask 30. In addition, light is not irradiated to a portion of the photosensitive layer 71 located on the substrate 65 at the periphery of the second mask 30. In addition, as shown in FIG. 17, the first mask 20 on the photosensitive layer 71 on the substrate 65 so that the second mask 30 is positioned in the opening 22 of the first mask 20. To place.

Subsequently, a developing step of developing the photosensitive layer 71 is performed. As a result, a portion of the photosensitive layer 71 located on the peripheral region 37 of the second mask 30 is removed. In addition, the photosensitive layer 71 is a portion located between the first surface 201 of the first mask 20 and the substrate 65, and a portion in the vicinity of the side surface 203 of the first mask 20 is removed. do. In addition, of the photosensitive layer 71 positioned between the first surface 201 and the substrate 65 of the first mask 20, a developer solution is separated from the side surface 203 of the first mask 20. Not reachable, or difficult to reach. For this reason, as shown in FIG. 18, between the 1st surface 201 of the 1st mask 20 and the board|substrate 65, the photosensitive layer 71 which is not exposed partially remains.

Subsequently, as shown in FIG. 19, a plating process of forming the bonding portion 40 by supplying a plating solution onto the substrate 65 is performed. In the plating process, the plating solution contacts the side surface 203 of the first mask 20 and the peripheral region 37 of the second mask 30, and the first surface 201 of the first mask 20 The plating solution enters the space between the photosensitive layer 71 and the substrate 65 from which the photosensitive layer 71 has been removed. The plating solution entering the space from which the photosensitive layer 71 has been removed becomes the first surface portion 43 of the first portion 41 of the bonding portion 40. Further, the plating solution remaining on the second surface 202 of the plate member 21 becomes the second surface portion 44 of the first portion 41 of the bonding portion 40.

Although not shown, a resist layer may be provided on a portion of the second surface 202 of the plate member 21 in which the second surface portion 44 should not be formed before performing the plating treatment process. Accordingly, the width W3 of the second surface portion 44 formed on the second surface 202 of the plate member 21 can be controlled.

In this embodiment, the photosensitive layer 71 between the first surface 201 and the substrate 65 of the first mask 20 is removed by adjusting the time of the developing process for developing the photosensitive layer 71, etc. You can adjust the amount. Thereby, the width W2 of the first surface portion 43 formed by the plating solution penetrating into the space from which the photosensitive layer 71 has been removed can be adjusted.

After that, the photosensitive layer 71 is removed. In addition, the first mask 20, the second mask 30, and the bonding portion 40 are separated from the substrate 65. In this way, it is possible to obtain a mask 12 including the first mask 20 and the second mask 30 and the junction portion 40 for bonding the first mask 20 and the second mask 30 to each other. .

In addition, an exposure process of irradiating light to a portion of the photosensitive layer 71 positioned on the effective region 36 of the second mask 30 and disposing the first mask 20 on the photosensitive layer 71 The order of the batch process is arbitrary. That is, a batch process may be performed after an exposure process, and you may perform an exposure process after a batch process.

In addition, although FIG. 16 shows an example in which the photosensitive layer 71 is a photocurable type that is cured by irradiation with light, it is not limited to this. The configuration of the photosensitive layer 71 and the configuration of the exposure step are, in the subsequent development step, a portion of the photosensitive layer 71 located on the effective region 36 of the second mask 30 remains, and the photosensitive layer ( Of the 71), a portion positioned on the peripheral region 37 of the second mask 30 is removed, and a portion of the photosensitive layer 71 positioned between the first mask 20 and the substrate 65 is partially removed. It is arbitrary as long as it is removed.

Subsequently, the effect of the mask 12 according to the present embodiment will be described with reference to FIGS. 20 and 21. Fig. 20 is a diagram showing a mode in which an external force F is applied to a mask according to a comparative form. In addition, FIG. 21 is a diagram showing a mode in which an external force F is applied to the mask 12 according to the present embodiment. The external force F is applied to the third surface 301 of the second mask 30 in the thickness direction of the second mask 30, for example. As shown in Fig. 20, in the mask according to the form of comparison, the first portion 41 of the bonding portion 40 is in contact with only the side surface 203 of the first mask 20, and the first surface 201 It is not in contact with.

When an external force is applied to the second mask 30, a force is generated between the first portion 41 of the bonding portion 40 and the plate member 21 of the first mask 20. In the example shown in FIG. 20, since the first portion 41 of the bonding portion 40 is in contact with only the side surface 203 of the first mask 20, the side portion 42 and the side surface of the first portion 41 The force F1 occurs only between (203). In this case, if F1 exceeds the adhesive force between the side portion 42 and the side surface 203 of the bonding portion 40, the first portion 41 may be separated from the first mask 20.

In contrast, in the present embodiment, the first portion 41 of the bonding portion 40 further includes the first surface portion 43. For this reason, as shown in FIG. 21, not only the force F1 is generated between the side portion 42 and the side surface 203 of the first portion 41, but also the first surface portion 43 of the first portion 41 A force F2 is also generated between) and the first side 201. That is, the force generated between the first portion 41 of the bonding portion 40 and the plate member 21 of the first mask 20 can be dispersed compared to the case of the comparative form illustrated in FIG. 20. Accordingly, it is possible to suppress local concentration of the force generated between the first portion 41 of the bonding portion 40 and the plate member 21 of the first mask 20. As a result, separation of the first portion 41 of the bonding portion 40 from the first mask 20 can be suppressed. In addition, the contact area of the first portion 41 of the bonding portion 40 with respect to the first mask 20 increases by the amount of the first surface portion 43. In this respect as well, separation of the first portion 41 from the first mask 20 can be suppressed.

In addition, it is possible to make various changes to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in the above-described embodiment are used for portions that can be configured similarly to the above-described embodiments, Redundant descriptions are omitted. In addition, when it is clear that the effect obtained in the above-described embodiment is also obtained in a modified example, the description thereof may be omitted.

In the above-described embodiment, an example in which there is one plating layer included in the metal layer 31 of the second mask 30 has been shown, but is not limited thereto. The metal layer 31 may contain a plurality of plating layers. Hereinafter, an example in which the metal layer 31 includes two plating layers will be described with reference to FIGS. 22 to 27.

First, as shown in FIG. 22, a first resist pattern 60 is formed on the surface of the substrate 65. The first resist pattern 60 includes a first resist layer 61, a plurality of first openings 62 and second openings 63 formed in the first resist layer 61. As in the case of the above-described embodiment shown in FIG. 13, the first opening 62 is in the portion of the substrate 65 where the metal layer 31 of the effective region 36 of the second mask 30 is to be formed. It is prepared. On the other hand, the second opening 63 is widening over the entire portion of the substrate 65 corresponding to the peripheral region 37 of the second mask 30.

Subsequently, as shown in FIG. 23, a plating solution is supplied onto the substrate 65. As a result, the first plating layer 311 is formed in the first opening 62 and the second opening 63 of the first resist layer 61 by electroplating.

Subsequently, as shown in FIG. 24, a second resist layer 66 is formed on the first plating layer 311 formed in the second opening 63. An opening 67 is formed in the second resist layer 66. The second resist layer 66 is provided in a portion of the second mask 30 where the above-described second hole 33 is to be formed.

Subsequently, as shown in FIG. 25, a plating solution is supplied onto the substrate 65. Thereby, the second plating layer 312 is formed in the first opening 62 of the first resist layer 61 and the opening 67 of the second resist layer 66 by electroplating. The composition of the second plating layer 312 may be the same as or different from that of the first plating layer 311.

Subsequently, the first resist layer 61 and the second resist layer 66 are removed. Thereby, as shown in FIG. 26, a second mask having an effective area 36 including a plurality of first holes 32 and a peripheral area 37 including a plurality of second holes 33 ( 30) can be obtained. The first hole 32 of the effective region 36 penetrates the metal layer 31 including the first plating layer 311 and the second plating layer 312. On the other hand, the second hole 33 of the peripheral region 37 penetrates the second plating layer 312, but does not penetrate the first plating layer 311. That is, in this modification, the second hole 33 of the peripheral region 37 is a concave portion positioned on the fourth surface 302 side so as not to penetrate the metal layer 31.

After fabricating the second mask 30, a bonding portion forming step of forming the bonding portion 40 is performed similarly to the case of the above-described embodiment. For example, the process of forming the photosensitive layer 71 on the substrate 65, the process of exposing the photosensitive layer 71, the process of disposing the first mask 20, and the process of developing the photosensitive layer 71 After performing the process, as shown in FIG. 26, a plating solution is supplied onto the substrate 65 to form the bonding portion 40. Also in this modified example, since the plating solution penetrates the second hole 33 of the peripheral region 37 of the second mask 30, the adhesion between the bonding portion 40 and the second mask 30 can be increased.

After that, the photosensitive layer 71 is removed. In addition, the first mask 20, the second mask 30, and the bonding portion 40 are separated from the substrate 65. In this way, as shown in FIG. 27, the first mask 20 and the second mask 30, and the bonding portion 40 for bonding the first mask 20 and the second mask 30 is provided. A mask 12 can be obtained.

In the above-described embodiment, an example in which there is one member constituting the plate member 21 of the first mask 20 has been shown, but is not limited to this. The plate member 21 may include a plurality of members laminated in the thickness direction. Hereinafter, an example in which the plate member 21 includes two members joined by an adhesive layer will be described with reference to FIG. 28.

28 is a cross-sectional view showing the mask 12 according to the present modification. The plate member 21 of the first mask 20 includes a first member 211 located on the first surface 201 side, a second member 212 located on the second surface 202 side, It has an adhesive layer 213 bonding the first member 211 and the second member 212 to each other. The adhesive layer 213 contains a resin having adhesiveness. For example, the adhesive layer 213 contains acrylic resin. The thickness of the adhesive layer 213 may be, for example, 3 µm or more, 5 µm or more, 7 µm or more, or 10 µm or more. In addition, the thickness of the adhesive layer 213 may be 40 µm or less, 30 µm or less, 20 µm or less, or 10 µm or less, for example. The range of the thickness of the adhesive layer 213 may be determined by a combination of any one of the plurality of lower limit candidate values described above and any one of the plurality of upper limit candidate values described above, for example, 3 μm or more. It may be 40 µm or less, 5 µm or more and 30 µm or less, 7 µm or more and 20 µm or less, or 10 µm or more and 10 µm or less. In addition, the range of the thickness of the adhesive layer 213 may be determined by a combination of any two of the plurality of lower limit candidate values described above, for example, 3 µm or more and 10 µm or less, and 3 µm or more and 7 µm or less. It may be sufficient, 5 micrometers or more and 10 micrometers or less may be sufficient, and 5 micrometers or more and 7 micrometers or less may be sufficient. In addition, the range of the thickness of the adhesive layer 213 may be determined by a combination of any two of the plurality of upper limit candidate values described above, for example, 10 µm or more and 40 µm or less, and 10 µm or more and 30 µm or less. It may be, 20 µm or more and 40 µm or less, and 20 µm or more and 30 µm or less.

The material of the first member 211 and the material of the second member 212 may be the same or different. For example, the 1st member 211 and the 2nd member 212 both have an iron alloy containing 30 mass% or more and 38 mass% or less of nickel.

In this modified example, the first member 211 is wet-etched from the first surface side and the second surface side to form an opening in the first member 211. Further, the second member 212 is wet-etched from the first surface side and the second surface side to form an opening in the second member 212. Thereafter, the first member 211 and the second member 212 are stacked so that the opening of the first member 211 and the opening of the second member 212 overlap. As a result, the first mask 20 in which the opening 22 is formed can be obtained. Both the side surface 203 of the first member 211 and the side surface 203 of the second member 212 include a protrusion 203t.

According to this modified example, by configuring the plate member 21 of the first mask 20 with a plurality of members, compared to the case where the plate member 21 is composed of one member, it is necessary to form an opening in the member. The time required for wet etching can be shortened. Thereby, it is possible to reduce the amount of side etching generated in the member, for example.

In addition, in the above-described embodiment, an example was shown in which the peripheral region 37 of the second mask 30 has the second hole 33 into which the junction portion 40 enters, but is not limited thereto. For example, as shown in FIG. 29, the second hole 33 need not be formed in the peripheral region 37 of the second mask 30. Even in this case, since the second portion 46 of the bonding portion 40 includes the fourth surface portion 47 in contact with the fourth surface 302, the second portion 46 is the second mask 30 Separation from the peripheral region 37 can be suppressed. In addition, since the first portion 41 of the bonding portion 40 includes the side portion 42 and the first side portion 43, the first portion 41 and the first mask 20 of the bonding portion 40 ) It is possible to disperse the force generated between the plate members 21. Thereby, the force generated between the first portion 41 of the bonding portion 40 and the plate member 21 of the first mask 20 can be suppressed from being locally concentrated, and the first portion of the bonding portion 40 Separation of the portion 41 from the first mask 20 can be suppressed. In addition, the contact area of the first portion 41 of the bonding portion 40 with respect to the first mask 20 increases by the amount of the first surface portion 43. In this respect as well, separation of the first portion 41 from the first mask 20 can be suppressed.

In addition, although several modifications to the above-described embodiment have been described, it is naturally possible to appropriately combine and apply a plurality of modifications.

Claims (18)

A first mask including an opening, and having a first surface, a second surface positioned on the opposite side of the first surface, and a side surface extending from the first surface to the second surface and defining the opening. A first mask,
A second mask comprising a third surface located at the opening of the first mask and located on the first surface side of the first mask and a fourth surface located on the second surface side of the first mask, the A second mask having an effective region including a first hole penetrating through the second mask, and a peripheral region positioned at a periphery of the effective region,
A first portion including at least a side portion in contact with the side surface of the first mask and a first surface portion in contact with the first surface of the first mask, and on the fourth surface of the peripheral region of the second mask A mask having a second portion including at least a fourth surface portion in contact, and having a bonding portion for bonding the first mask and the second mask. The mask according to claim 1, wherein a surface of the third surface of the second mask and the first surface portion of the first portion of the bonding portion are located on the same plane. The mask according to claim 1 or 2, wherein a width of the first surface portion of the first portion of the bonding portion is 3 μm or more. The mask according to any one of claims 1 to 3, wherein the first portion of the bonding portion further comprises a second surface portion in contact with the second surface of the first mask. The mask according to claim 4, wherein the width of the second surface portion of the first portion of the junction portion is 3 μm or more. The method according to any one of claims 1 to 5, wherein the peripheral region of the second mask includes a second hole concave from the fourth surface side to the third surface side of the second mask,
The second portion of the junction portion further comprises a hole portion positioned inside the second hole of the peripheral region of the second mask. The mask according to claim 6, wherein the second hole in the peripheral region of the second mask penetrates from the fourth surface side to the third surface side of the second mask. The mask according to claim 6 or 7, wherein the second hole in the peripheral region of the second mask has a dimension of 10 µm or more and 200 µm or less. The method according to any one of claims 6 to 8, wherein the shape of the second hole in the peripheral region of the second mask is circular when viewed along a normal direction of the fourth surface of the second mask Having a rectangle, a mask. The mask according to any one of claims 1 to 9, wherein the side surface of the first mask has a protrusion protruding toward the second mask positioned in the opening. The mask according to any one of claims 1 to 10, wherein the side surface of the first mask includes a rough surface having an arithmetic mean roughness of 0.12 μm or more. The mask according to any one of claims 1 to 11, wherein the thickness of the first mask is 250 µm or more and 1000 µm or less. The mask according to any one of claims 1 to 12, wherein the second mask has a thickness of 20 µm or less. The mask according to any one of claims 1 to 13, wherein the bonding portion comprises a plating layer. A first mask including an opening, and having a first surface, a second surface positioned on the opposite side of the first surface, and a side surface extending from the first surface to the second surface and defining the opening. A first mask preparation step of preparing a first mask, and
A second mask comprising a third surface located at the opening of the first mask and located on the first surface side of the first mask and a fourth surface located on the second surface side of the first mask, the A second mask preparation step of preparing a second mask having an effective region including a first hole penetrating the second mask and a peripheral region positioned at the periphery of the effective region;
A first portion including at least a side portion in contact with the side surface of the first mask and a first surface portion in contact with the first surface of the first mask, and a fourth surface in contact with the fourth surface of the second mask A method for manufacturing a mask, comprising: a bonding portion forming step of forming a bonding portion having a second portion including at least a portion by a plating treatment. The method of claim 15, wherein the bonding portion forming step,
Forming a photosensitive layer covering the second mask and the substrate on the substrate provided with the second mask, and
Disposing the first mask on the photosensitive layer on the substrate so that the second mask is positioned in the opening of the first mask;
A portion of the photosensitive layer positioned on the effective area of the second mask remains, a portion of the photosensitive layer positioned on the peripheral area of the second mask is removed, and the first mask of the photosensitive layer Exposing and developing the photosensitive layer so that a portion positioned between the and the substrate is partially removed,
A plating solution is supplied so that the plating solution contacts the side surface of the first mask and the peripheral region of the second mask, and the plating solution enters the space between the first mask and the substrate from which the photosensitive layer has been removed, A method of manufacturing a mask having a step of forming the junction. The method of claim 15 or 16, wherein the first mask preparation step,
A step of preparing a plate member made of metal and including a first surface and a second surface positioned on the opposite side of the first surface;
A method for manufacturing a mask comprising a step of forming the opening in the plate member by wet etching the plate member from the first surface side and the second surface side. The method for manufacturing a mask according to any one of claims 15 to 17, wherein the first mask preparation step includes a step of performing a sandblast treatment on the side surface of the first mask.

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