TWI774875B - adsorption method - Google Patents

adsorption method Download PDF

Info

Publication number
TWI774875B
TWI774875B TW107140701A TW107140701A TWI774875B TW I774875 B TWI774875 B TW I774875B TW 107140701 A TW107140701 A TW 107140701A TW 107140701 A TW107140701 A TW 107140701A TW I774875 B TWI774875 B TW I774875B
Authority
TW
Taiwan
Prior art keywords
contact
fabry
interference filter
suction
electrode terminal
Prior art date
Application number
TW107140701A
Other languages
Chinese (zh)
Other versions
TW201923960A (en
Inventor
廣瀬真樹
柴山勝己
笠原隆
川合敏光
大山泰生
蔵本有未
Original Assignee
日商濱松赫德尼古斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商濱松赫德尼古斯股份有限公司 filed Critical 日商濱松赫德尼古斯股份有限公司
Publication of TW201923960A publication Critical patent/TW201923960A/en
Application granted granted Critical
Publication of TWI774875B publication Critical patent/TWI774875B/en

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • G02B5/284Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00Gripping heads and other end effectors
    • B25J15/06Gripping heads and other end effectors with vacuum or magnetic holding means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Robotics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)
  • Optical Filters (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • External Artificial Organs (AREA)

Abstract

吸附方法係使用吸附夾頭吸附具備基板、及設置於上述基板上且包含面向與上述基板相反側之主面之積層構造部的法布里-珀羅干涉濾波器之吸附方法,且具備:第1步驟,其以與上述主面對向之方式配置上述吸附夾頭;第2步驟,其於上述第1步驟之後,使上述吸附夾頭接觸於上述法布里-珀羅干涉濾波器;及第3步驟,其於上述第2步驟之後,藉由上述吸附夾頭吸附上述法布里-珀羅干涉濾波器。The suction method is a suction method for suctioning a substrate and a Fabry-Perot interference filter provided on the substrate and including a main surface facing the opposite side of the substrate and a Fabry-Perot interference filter using a suction chuck, and comprising: a first 1 step of arranging the suction chuck so as to face the main surface; a second step of bringing the suction chuck into contact with the Fabry-Perot interference filter after the first step; and In the third step, after the second step, the Fabry-Perot interference filter is adsorbed by the adsorption chuck.

Description

吸附方法adsorption method

本發明之一態樣係關於吸附方法。One aspect of the present invention pertains to adsorption methods.

作為先前之法布里-珀羅干涉濾波器,已知一種具備基板、於基板上介隔空隙而彼此對向之固定鏡面及可動鏡面、及劃定空隙之中間層者(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻]As a conventional Fabry-Perot interference filter, there is known a substrate, a fixed mirror surface and a movable mirror surface facing each other with a gap on the substrate, and an intermediate layer defining the gap (for example, refer to Patent Documents) 1). [Prior Art Literature] [Patent Literature]

[專利文獻1]日本特表2013-506154號公報[Patent Document 1] Japanese Patent Publication No. 2013-506154

[發明所欲解決之問題][Problems to be Solved by Invention]

於個別地搬送如上述之法布里-珀羅干涉濾波器之晶片時,考慮使用例如吸附夾頭一面個別地吸附晶片一面移送。於該情形時,期望於解除吸附時,抑制法布里-珀羅干涉濾波器之姿勢及位置變化,使法布里-珀羅干涉濾波器自吸附夾頭穩定地脫離。When the wafers of the Fabry-Perot interference filter as described above are individually transferred, it is considered to transfer the wafers while individually sucking the wafers using, for example, a suction chuck. In this case, it is desirable to suppress changes in the posture and position of the Fabry-Perot interference filter at the time of desorption, so that the Fabry-Perot interference filter can be stably detached from the suction chuck.

本發明之一態樣之目的在於提供一種可穩定地使法布里-珀羅干涉濾波器脫離之吸附方法。 [解決問題之技術手段]An object of one aspect of the present invention is to provide an adsorption method that can stably release a Fabry-Perot interference filter. [Technical means to solve problems]

本發明之一態樣之吸附方法係使用吸附夾頭吸附具備基板、及設置於基板上且包含面向與基板相反側之主面之積層構造部之法布里-珀羅干涉濾波器之吸附方法,且具備:第1步驟,其以與主面對向之方式配置吸附夾頭;第2步驟,其於第1步驟後,使吸附夾頭接觸於法布里-珀羅干涉濾波器;及第3步驟,其於第2步驟後,藉由吸附夾頭吸附法布里-珀羅干涉濾波器;吸附夾頭具備:本體部,其具有表面;及接觸部,其以自表面突出之方式設置於表面,且包含形成有用於吸氣之開口之一對第1接觸面;於積層構造部設置有:膜片構造部,其包含介隔空隙而彼此對向且彼此之距離為可變之第1鏡面部及第2鏡面部、及主面之一部分;及一對第1電極端子,其自與主面交叉之方向觀察,以隔著膜片構造部而彼此對向之方式配置;於第1步驟中,以表面與主面對向且第1接觸面之各者與第1電極端子之各者對向之方式配置吸附夾頭;於第2步驟中,使第1接觸面之各者接觸於第1電極端子之各者;於第3步驟中,藉由經由第1接觸面之開口之吸氣將第1電極端子之各者吸附於第1接觸面。A suction method of one aspect of the present invention is a suction method for suctioning a Fabry-Perot interference filter including a substrate and a laminated structure portion provided on the substrate and including a main surface facing the opposite side of the substrate using a suction chuck. , and is provided with: a first step of disposing the suction chuck in a manner facing the main surface; a second step of making the suction chuck contact the Fabry-Perot interference filter after the first step; and In the third step, after the second step, the Fabry-Perot interference filter is adsorbed by the adsorption chuck; the adsorption chuck is provided with: a main body part having a surface; and a contact part protruding from the surface It is arranged on the surface and includes a pair of first contact surfaces formed with an opening for inhalation; the laminated structure part is provided with: a diaphragm structure part, which includes a gap and faces each other and the distance from each other is variable The first mirror surface part, the second mirror surface part, and a part of the main surface; and a pair of first electrode terminals, which are arranged to face each other with the diaphragm structure part interposed therebetween, when viewed from a direction intersecting the main surface; In the first step, the suction chuck is arranged so that the surface and the main surface face each other and each of the first contact surfaces faces each of the first electrode terminals; in the second step, each of the first contact surfaces is are in contact with each of the first electrode terminals; in the third step, each of the first electrode terminals is adsorbed to the first contact surface by suction through the opening of the first contact surface.

作為該吸附方法之吸附對象之法布里-珀羅干涉濾波器具備基板及設置於基板上之積層構造部。於積層構造部設置有:膜片構造部,其具有介隔空隙而彼此對向且彼此之距離為可變之第1鏡面部及第2鏡面部;及一對第1電極端子,其以隔著膜片構造部而相互對向之方式配置。相對於此,於使用於該吸附方法之吸附夾頭中,突設於本體部之表面之接觸部包含形成有用於吸氣之開口之第1接觸面。且,於第1步驟中,將吸附夾頭配置為吸附夾頭之表面與法布里-珀羅干涉濾波器之主面對向。此時,第1接觸面之各者與第1電極端子之各者對向。接著,於第2步驟中,使吸附夾頭接觸於法布里-珀羅干涉濾波器。此時,使第1接觸面之各者接觸於第1電極端子之各者。且,於第3步驟中,藉由吸附夾頭吸附法布里-珀羅干涉濾波器。此時,藉由經由第1接觸面之開口之吸氣將第1電極端子之各者吸附於第1接觸面。藉此,於吸附法布里-珀羅干涉濾波器時,可吸附第1電極端子之限定之範圍。因此,能夠獲得適當之吸附,其結果,於解除吸附時,可使法布里-珀羅干涉濾波器穩定地脫離。The Fabry-Perot interference filter, which is an adsorption object of the adsorption method, includes a substrate and a laminated structure portion provided on the substrate. The laminated structure portion is provided with: a diaphragm structure portion having a first mirror portion and a second mirror portion that face each other with a gap interposed therebetween and have variable distances from each other; and a pair of first electrode terminals separated from each other. The diaphragm structures are arranged so as to face each other. On the other hand, in the suction chuck used for the suction method, the contact portion protruding from the surface of the main body portion includes a first contact surface on which an opening for suction is formed. And, in the first step, the suction chuck is arranged so that the surface of the suction chuck faces the principal surface of the Fabry-Perot interference filter. At this time, each of the first contact surfaces faces each of the first electrode terminals. Next, in the second step, the suction chuck is brought into contact with the Fabry-Perot interference filter. At this time, each of the first contact surfaces is brought into contact with each of the first electrode terminals. Then, in the third step, the Fabry-Perot interference filter is adsorbed by the adsorption chuck. At this time, each of the first electrode terminals is adsorbed to the first contact surface by suction through the opening of the first contact surface. Thereby, when the Fabry-Perot interference filter is adsorbed, the limited range of the first electrode terminal can be adsorbed. Therefore, proper adsorption can be obtained, and as a result, the Fabry-Perot interference filter can be stably released when the adsorption is released.

本發明之一態樣之吸附方法中亦可為,第1電極端子包含自主面突出之頂面,且於上述第2步驟中,使第1接觸面接觸於上述頂面。於該情形時,於第2步驟中,使接觸部之第1接觸面接觸於較膜片構造部更突出之第1電極端子。因此,吸附夾頭不會接觸到膜片構造部,或即便接觸亦降低對膜片構造部之負荷。因此,於吸附法布里-珀羅干涉濾波器時,可避免膜片構造部破損,抑制法布里-珀羅干涉濾波器之不良品產生。In the adsorption method of one aspect of the present invention, the first electrode terminal may include a top surface protruding from the main surface, and in the second step, the first contact surface may be brought into contact with the top surface. In this case, in the second step, the first contact surface of the contact portion is brought into contact with the first electrode terminal protruding from the diaphragm structure portion. Therefore, the suction chuck does not come into contact with the diaphragm structure, or even if it contacts, the load on the diaphragm structure is reduced. Therefore, when the Fabry-Perot interference filter is adsorbed, the diaphragm structure can be prevented from being damaged, and the occurrence of defective products of the Fabry-Perot interference filter can be suppressed.

本發明之一態樣之吸附方法中亦可為,於第1接觸面接觸於第1電極端子之狀態下位於第1接觸面之膜片構造部側之邊緣係形成為與膜片構造部之外緣對應之形狀,於第1步驟中,於第1接觸面接觸到第1電極端子之狀態下,以邊緣位於膜片構造部之外側且沿著膜片構造部之外緣之方式配置吸附夾頭。於該情形時,於吸附法布里-珀羅干涉濾波器時,可避免接觸到膜片構造部。In the adsorption method of one aspect of the present invention, in a state where the first contact surface is in contact with the first electrode terminal, the edge on the side of the diaphragm structure portion of the first contact surface may be formed so as to be in contact with the diaphragm structure portion. For the shape corresponding to the outer edge, in the first step, when the first contact surface is in contact with the first electrode terminal, the suction is arranged in such a way that the edge is located outside the diaphragm structure part and along the outer edge of the diaphragm structure part. collet. In this case, when the Fabry-Perot interference filter is adsorbed, it is possible to avoid contact with the diaphragm structure portion.

本發明之一態樣之吸附方法中亦可為,自與主面交叉之方向觀察,膜片構造部呈圓形狀;邊緣以仿照膜片構造部之外緣之方式形成為圓弧狀。於該情形時,於吸附法布里-珀羅干涉濾波器時,可確實地避免接觸到膜片構造。In the adsorption method of one aspect of the present invention, the diaphragm structure portion may be in a circular shape when viewed from a direction intersecting with the main surface, and the edge may be formed in an arc shape in a manner similar to the outer edge of the diaphragm structure portion. In this case, when the Fabry-Perot interference filter is adsorbed, contact with the diaphragm structure can be reliably avoided.

本發明之一態樣之吸附方法中亦可為,於第1步驟中,於第1接觸面接觸到第1電極端子之狀態下,以開口與第1電極端子部分地偏移之方式配置吸附夾頭。於該情形時,可避免吸附力變得過大,使法布里-珀羅干涉濾波器更穩定地脫離。In the adsorption method of one aspect of the present invention, in the first step, in a state in which the first contact surface is in contact with the first electrode terminal, the adsorption may be arranged such that the opening and the first electrode terminal are partially offset. collet. In this case, the adsorption force can be prevented from becoming too large, and the Fabry-Perot interference filter can be detached more stably.

本發明之一態樣之吸附方法中亦可為,吸附夾頭於與自一第1接觸面朝向另一第1接觸面之方向交叉之軸線上,具備以自表面突出之方式設置於表面之引導部;第1電極端子自與主面交叉之方向觀察,分別設置於積層構造部之角部;於第1步驟中,於第1接觸面接觸於第1電極端子之狀態下,以引導部於積層構造部之與設置有第1電極端子之角部為另外之角部之外側沿著另外角部之方式配置吸附夾頭。於該情形時,可藉由引導部限制法布里-珀羅干涉濾波器之姿勢之變化,而穩定地加以保持及脫離。In the adsorption method of one aspect of the present invention, the adsorption chuck may be provided on the axis that intersects the direction from one first contact surface toward the other first contact surface, and is provided on the surface so as to protrude from the surface. Guide parts; the first electrode terminals are respectively provided at the corners of the laminated structure part when viewed from the direction intersecting the main surface; in the first step, in the state where the first contact surface is in contact with the first electrode terminals, the guide parts are A suction chuck is arranged on the outer side of the other corner of the laminated structure part and the corner where the first electrode terminal is provided, along the other corner. In this case, the change of the posture of the Fabry-Perot interference filter can be restrained by the guide portion, and can be held and released stably.

本發明之一態樣之吸附方法中亦可為,引導部於第1接觸面接觸於第1電極端子之狀態下,以沿著另外角部之外緣之方式彎曲延伸。於該情形時,藉由引導部可限制法布里-珀羅干涉濾波器沿著主面於平面內旋轉,而更穩定地加以保持及脫離。In the adsorption method of one aspect of the present invention, the guide portion may be bent and extended along the outer edge of the other corner portion in a state in which the first contact surface is in contact with the first electrode terminal. In this case, the Fabry-Perot interference filter can be restricted from rotating in-plane along the main surface by the guide portion, so that it can be held and released more stably.

本發明之一態樣之吸附方法中亦可為,法布里-珀羅干涉濾波器具備自與主面交叉之方向觀察以隔著膜片構造部而彼此對向之方式配置之一對第2電極端子,第2電極端子配置於與第1電極端子對向之方向交叉之軸線上,接觸部包含以與第2電極端子對應之方式配置且形成有用於吸氣之開口之第2接觸面;於第1步驟中,以第2接觸面之各者與第2電極端子之各者對向之方式配置吸附夾頭,於第2步驟中,使第2接觸面之各者接觸於第2電極端子之各者,於第3步驟中,藉由經由第2接觸面之開口之吸氣,將第2電極端子之各者吸附於第2接觸面。於該情形時,可經由配置於彼此位置不同之至少3點之開口進行吸附,而可更穩定地吸附、保持法布里-珀羅干涉濾波器。 [發明之效果]In the adsorption method according to one aspect of the present invention, the Fabry-Perot interference filter may include a pair of first and second fiducials that are arranged so as to face each other across the diaphragm structure when viewed from a direction intersecting with the main surface. 2-electrode terminal, the second electrode terminal is arranged on an axis that intersects the direction opposite to the first electrode terminal, and the contact portion includes a second contact surface arranged in a manner corresponding to the second electrode terminal and formed with an opening for air intake ; In the first step, the suction chucks are arranged in such a way that each of the second contact surfaces and each of the second electrode terminals face each other, and in the second step, each of the second contact surfaces is brought into contact with the second For each of the electrode terminals, in the third step, each of the second electrode terminals is sucked to the second contact surface by suction through the opening of the second contact surface. In this case, the Fabry-Perot interference filter can be sucked and held more stably by suction through the openings arranged at at least three positions different from each other. [Effect of invention]

根據本發明之一態樣,可提供能夠使法布里-珀羅干涉濾波器穩定地脫離之吸附方法。According to an aspect of the present invention, an adsorption method capable of stably releasing a Fabry-Perot interference filter can be provided.

以下,對一實施形態參照圖式詳細說明。另,各圖中,有對相同之要素彼此或相當之要素彼此附加彼此相同之符號而省略重複之說明之情形。Hereinafter, one embodiment will be described in detail with reference to the drawings. In addition, in each figure, the same code|symbol is attached|subjected to the mutually identical element or the equivalent element, and the overlapping description may be abbreviate|omitted.

本實施形態之吸附方法係使用吸附夾頭進行法布里-珀羅干涉濾波器之吸附。因此,首先,對吸附對象之法布里-珀羅干涉濾波器之一實施形態進行說明。 [法布里-珀羅干涉濾波器之構成]The adsorption method of this embodiment uses the adsorption chuck to perform adsorption of the Fabry-Perot interference filter. Therefore, first, one embodiment of the Fabry-Perot interference filter to be adsorbed will be described. [Composition of Fabry-Perot Interference Filter]

圖1係本實施形態之法布里-珀羅干涉濾波器之俯視圖。圖2係圖1所示之法布里-珀羅干涉濾波器之仰視圖。圖3係沿著圖1之Ⅲ–Ⅲ線之法布里-珀羅干涉濾波器之剖視圖。FIG. 1 is a plan view of the Fabry-Perot interference filter of the present embodiment. FIG. 2 is a bottom view of the Fabry-Perot interference filter shown in FIG. 1 . FIG. 3 is a cross-sectional view of the Fabry-Perot interference filter taken along line III-III of FIG. 1 .

如圖1~3所示,法布里-珀羅干涉濾波器1具備基板11。基板11具有第1表面11a及與第1表面11a對向之第2表面11b。於第1表面11a,依次積層有反射防止層21、第1積層體22、中間層23及第2積層體24。於第1積層體22與第2積層體24之間,藉由框狀之中間層23劃定空隙(氣隙)S。自與第1積層體22、中間層23及第1表面11a交叉(正交)之方向觀察位於第1積層體22上之第2積層體24之一部分係構成積層構造部20。積層構造部20設置於基板11之第1表面11a上,且包含面向與基板11相反側之主面20s。主面20s係第2積層體24之表面24a之一部分。As shown in FIGS. 1 to 3 , the Fabry-Perot interference filter 1 includes a substrate 11 . The substrate 11 has a first surface 11a and a second surface 11b facing the first surface 11a. On the 1st surface 11a, the antireflection layer 21, the 1st laminated body 22, the intermediate layer 23, and the 2nd laminated body 24 are laminated|stacked in this order. A space (air gap) S is defined by a frame-shaped intermediate layer 23 between the first layered body 22 and the second layered body 24 . A part of the second layered body 24 located on the first layered body 22 when viewed from the direction intersecting (orthogonal) to the first layered body 22 , the intermediate layer 23 and the first surface 11 a constitutes the layered structure portion 20 . The build-up structure portion 20 is provided on the first surface 11 a of the substrate 11 and includes a main surface 20 s facing the opposite side of the substrate 11 . The main surface 20s is a part of the surface 24a of the second laminate 24 .

自垂直於第1表面11a之方向觀察之情形(俯視)之各部之形狀及位置關係如下所述。基板11之外緣為例如矩形狀。基板11之外緣與第2積層體24之外緣彼此一致。反射防止層21之外緣、第1積層體22之外緣及中間層23之外緣彼此一致。因此,積層構造部20亦於俯視下(自與主面20s交叉(正交)之方向觀察之情形下)為矩形狀。基板11具有相對於空隙S之中心位於較中間層23之外緣更外側之外緣部11c。外緣部11c例如為框狀,於自垂直於第1表面11a之方向觀察之情形時包圍中間層23。The shape and positional relationship of each part in the state (plan view) seen from the direction perpendicular|vertical to the 1st surface 11a are as follows. The outer edge of the substrate 11 has a rectangular shape, for example. The outer edge of the substrate 11 and the outer edge of the second layered body 24 coincide with each other. The outer edge of the antireflection layer 21 , the outer edge of the first laminate 22 , and the outer edge of the intermediate layer 23 correspond to each other. Therefore, the laminated structure part 20 also has a rectangular shape in plan view (when viewed from the direction intersecting (orthogonal) with the main surface 20s). The substrate 11 has an outer edge portion 11c located outside the center of the gap S relative to the outer edge of the intermediate layer 23 . The outer edge portion 11c is, for example, a frame shape, and surrounds the intermediate layer 23 when viewed from a direction perpendicular to the first surface 11a.

法布里-珀羅干涉濾波器1於被劃定為其中央部之光透過區域1a中,使具有特定波長之光透過。光透過區域1a為例如圓柱狀之區域。基板11例如由矽、石英或玻璃等構成。於基板11由矽構成之情形時,反射防止層21及中間層23例如由氧化矽構成。中間層23之厚度例如為數十 nm以上數十 μm以下。The Fabry-Perot interference filter 1 transmits light having a specific wavelength in the light transmission region 1a defined in its central portion. The light-transmitting region 1a is, for example, a cylindrical region. The substrate 11 is made of, for example, silicon, quartz, glass, or the like. When the substrate 11 is made of silicon, the antireflection layer 21 and the intermediate layer 23 are made of, for example, silicon oxide. The thickness of the intermediate layer 23 is, for example, several tens of nm or more and several tens of μm or less.

第1積層體22之中與光透過區域1a對應之部分係作為第1鏡面部31發揮功能。第1鏡面部31介隔反射防止層21配置於第1表面11a。第1積層體22係藉由將複數層多晶矽層25與複數層氮化矽層26逐層交互積層而構成。於本實施形態中,將多晶矽層25a、氮化矽層26a、多晶矽層25b、氮化矽層26b及多晶矽層25c依次積層於反射防止層21上。構成第1鏡面部31之多晶矽層25及氮化矽層26各者之光學厚度可為中心透過波長之1/4之整數倍。另,第1鏡面部31亦可不介隔反射防止層21而直接配置於第1表面11a上。A portion of the first laminate 22 corresponding to the light transmission region 1 a functions as the first mirror surface portion 31 . The first mirror surface portion 31 is arranged on the first surface 11 a via the antireflection layer 21 . The first laminate 22 is formed by alternately laminating a plurality of polysilicon layers 25 and a plurality of silicon nitride layers 26 layer by layer. In this embodiment, the polysilicon layer 25a, the silicon nitride layer 26a, the polysilicon layer 25b, the silicon nitride layer 26b, and the polysilicon layer 25c are laminated on the anti-reflection layer 21 in this order. The optical thickness of each of the polysilicon layer 25 and the silicon nitride layer 26 constituting the first mirror portion 31 may be an integral multiple of 1/4 of the central transmission wavelength. Moreover, the 1st mirror surface part 31 may be arrange|positioned directly on the 1st surface 11a without interposing the antireflection layer 21.

第2積層體24之中與光透過區域1a對應之部分係作為第2鏡面部32發揮功能。第2鏡面部32相對於第1鏡面部31於與基板11相反側介隔空隙S而與第1鏡面部31對向。第2積層體24經由反射防止層21、第1積層體22及中間層23配置於第1表面11a。第2積層體24係藉由將複數層多晶矽層27與複數層氮化矽層28逐層交互積層而構成。於本實施形態中,將多晶矽層27a、氮化矽層28a、多晶矽層27b、氮化矽層28b及多晶矽層27c依序積層於中間層23上。構成第2鏡面部32之多晶矽層27及氮化矽層28各者之光學厚度可為中心透過波長之1/4之整數倍。A portion of the second laminate 24 corresponding to the light transmission region 1 a functions as the second mirror surface portion 32 . The second mirror surface portion 32 faces the first mirror surface portion 31 with a gap S on the opposite side to the substrate 11 with respect to the first mirror surface portion 31 . The second laminate 24 is arranged on the first surface 11 a via the antireflection layer 21 , the first laminate 22 , and the intermediate layer 23 . The second laminate 24 is formed by alternately laminating a plurality of polysilicon layers 27 and a plurality of silicon nitride layers 28 layer by layer. In this embodiment, the polysilicon layer 27a, the silicon nitride layer 28a, the polysilicon layer 27b, the silicon nitride layer 28b, and the polysilicon layer 27c are stacked on the intermediate layer 23 in sequence. The optical thickness of each of the polysilicon layer 27 and the silicon nitride layer 28 constituting the second mirror portion 32 may be an integral multiple of 1/4 of the central transmission wavelength.

另,於第1積層體22及第2積層體24中,亦可取代氮化矽層而使用氧化矽層。又,作為構成第1積層體22及第2積層體24之各層之材料,亦可使用氧化鈦、氧化鉭、氧化鋯、氟化鎂、氧化鋁、氟化鈣、矽、鍺、硫化鋅等。又,此處,第1鏡面部31之空隙S側之表面(多晶矽層25c之表面)與第2鏡面部32之空隙S側之表面(多晶矽層27a之表面)介隔空隙S而直接對向。惟於第1鏡面部31之空隙S側之表面及第2鏡面部32之空隙S側之表面,亦可形成(不構成鏡面)電極層或保護層。於該情形時,第1鏡面部31與第2鏡面部32係於其間介置有該等層之狀態下,介隔空隙S而彼此對向。換言之,即使於此種情形下,仍可實現第1鏡面部31與第2鏡面部32之介隔空隙S之對向。In addition, in the first laminated body 22 and the second laminated body 24, a silicon oxide layer may be used instead of the silicon nitride layer. In addition, as the material of each layer constituting the first layered body 22 and the second layered body 24, titanium oxide, tantalum oxide, zirconium oxide, magnesium fluoride, aluminum oxide, calcium fluoride, silicon, germanium, zinc sulfide, etc. can also be used . Here, the surface of the first mirror surface portion 31 on the side of the gap S (the surface of the polysilicon layer 25 c ) and the surface of the second mirror surface portion 32 on the side of the gap S (the surface of the polysilicon layer 27 a ) are directly opposed to each other with the gap S interposed therebetween. . However, on the surface of the first mirror surface portion 31 on the side of the gap S and the surface of the second mirror surface portion 32 on the side of the gap S, an electrode layer or a protective layer may be formed (not constituting a mirror surface). In this case, the first mirror surface portion 31 and the second mirror surface portion 32 face each other with the gap S interposed therebetween in a state where the layers are interposed therebetween. In other words, even in this situation, the first mirror surface portion 31 and the second mirror surface portion 32 can be opposed to each other via the gap S.

於第2積層體24中與空隙S對應之部分,形成有自第2積層體24之與中間層23為相反側之表面24a(積層構造部20之主面20s)到達至空隙S之複數個貫通孔24b。複數個貫通孔24b形成為不會對第2鏡面部32之功能造成實質性影響之程度。複數個貫通孔24b係用來藉由蝕刻去除中間層23之一部分形成空隙S。In the portion of the second layered body 24 corresponding to the gap S, a plurality of pieces are formed from the surface 24a (the main surface 20s of the layered structure portion 20 ) of the second layered body 24 on the opposite side to the intermediate layer 23 to the gap S. through hole 24b. The plurality of through holes 24b are formed to such an extent that the function of the second mirror surface portion 32 is not substantially affected. The plurality of through holes 24b are used to remove a part of the intermediate layer 23 by etching to form the space S.

第2積層體24除第2鏡面部32以外,進而具有被覆部33與周緣部34。第2鏡面部32、被覆部33及周緣部34具有彼此相同之積層構造之一部分,且以相互連續之方式一體地形成。被覆部33於自垂直於第1表面11a之方向觀察之情形時包圍第2鏡面部32。被覆部33被覆中間層23之與基板11為相反側之表面23a以及中間層23之側面23b(外側之側面,即與空隙S側為相反側之側面)、第1積層體22之側面22a及反射防止層21之側面21a,到達至第1表面11a。即,被覆部33被覆中間層23之外緣、第1積層體22之外緣及反射防止層21之外緣。The second layered body 24 has a covering portion 33 and a peripheral edge portion 34 in addition to the second mirror surface portion 32 . The second mirror surface portion 32 , the covering portion 33 , and the peripheral edge portion 34 have a part of the same laminated structure, and are integrally formed so as to be continuous with each other. The covering portion 33 surrounds the second mirror portion 32 when viewed from the direction perpendicular to the first surface 11a. The covering portion 33 covers the surface 23a of the intermediate layer 23 on the opposite side to the substrate 11, the side surface 23b of the intermediate layer 23 (the side surface on the outside, that is, the side surface on the opposite side to the side of the gap S), the side surface 22a of the first laminate 22, and the surface 23b of the intermediate layer 23. The side surface 21a of the antireflection layer 21 reaches the first surface 11a. That is, the covering portion 33 covers the outer edge of the intermediate layer 23 , the outer edge of the first layered body 22 , and the outer edge of the antireflection layer 21 .

周緣部34於自與第1表面11a垂直之方向觀察之情形時包圍被覆部33。周緣部34位於外緣部11c之第1表面11a上。周緣部34之外緣自與第1表面11a垂直之方向觀察之情形時與基板11之外緣一致。The peripheral edge portion 34 surrounds the covering portion 33 when viewed from the direction perpendicular to the first surface 11a. The peripheral edge portion 34 is located on the first surface 11a of the outer edge portion 11c. The outer edge of the peripheral portion 34 coincides with the outer edge of the substrate 11 when viewed from the direction perpendicular to the first surface 11a.

周緣部34係沿著外緣部11c之外緣被薄化。即,周緣部34之中沿著外緣部11c之外緣之部分與除周緣部34之中沿著外緣之部分以外之其他部分相比變薄。於本實施形態中,周緣部34藉由去除構成第2積層體24之多晶矽層27及氮化矽層28之一部分而被薄化。周緣部34具有與被覆部33連續之非薄化部34a、及包圍非薄化部34a之薄化部34b。於薄化部34b中,直接設置於第1表面11a上之多晶矽層27a以外之多晶矽層27及氮化矽層28已被去除。The peripheral edge portion 34 is thinned along the outer edge of the outer edge portion 11c. That is, the portion of the peripheral portion 34 along the outer edge of the outer edge portion 11c is thinner than the portion other than the portion of the peripheral portion 34 along the outer edge. In this embodiment, the peripheral portion 34 is thinned by removing part of the polysilicon layer 27 and the silicon nitride layer 28 constituting the second laminate 24 . The peripheral edge portion 34 has a non-thinning portion 34a continuous with the covering portion 33, and a thinning portion 34b surrounding the non-thinning portion 34a. In the thinned portion 34b, the polysilicon layer 27 and the silicon nitride layer 28 other than the polysilicon layer 27a disposed directly on the first surface 11a have been removed.

如此,法布里-珀羅干涉濾波器1除積層構造部20以外,進而具備薄化部34b,其自與主面20s交叉(正交)之方向觀察位於積層構造部20之外側,且較主面20s更朝基板11側凹陷。薄化部34b自與主面20s交叉(正交)之方向觀察時,以包圍積層構造部20之方式形成為環狀(此處為矩形環狀)。薄化部34b例如於要將已形成對應於法布里-珀羅干涉濾波器1之複數個區域之晶圓切斷成各個單個之法布里-珀羅干涉濾波器1時使用。薄化部34b例如藉由蝕刻第2積層體24之積層構造而形成。In this way, the Fabry-Perot interference filter 1 is provided with the thinned portion 34b in addition to the laminated structure portion 20, which is located outside the laminated structure portion 20 when viewed from the direction intersecting (orthogonal) to the main surface 20s, and is relatively smaller than the laminated structure portion 20. The main surface 20s is further recessed toward the substrate 11 side. The thinned portion 34b is formed in an annular shape (here, a rectangular annular shape) so as to surround the laminated structure portion 20 when viewed from a direction intersecting (orthogonal) to the main surface 20s. The thinned portion 34b is used when, for example, a wafer on which a plurality of regions corresponding to the Fabry-Perot interference filter 1 are formed is to be cut into individual Fabry-Perot interference filters 1 . The thinned portion 34b is formed by, for example, etching the layered structure of the second layered body 24 .

非薄化部34a之與基板11為相反側之表面34c距離第1表面11a之高度,低於中間層23之表面23a距離第1表面11a之高度。非薄化部34a之表面34c距離第1表面11a之高度為例如100 nm~5000 nm。中間層23之表面23a距離第1表面11a之高度於例如500 nm~20000 nm之範圍內,為較非薄化部34a之表面34c距離第1表面11a之高度更大之高度。薄化部34b之寬度(非薄化部34a之外緣與外緣部11c之外緣之間之距離)為基板11之厚度之0.01倍以上。薄化部34b之寬度為例如5 μm~400 μm。基板11之厚度例如為500 μm至800 μm。The height of the surface 34c of the non-thinned portion 34a on the opposite side to the substrate 11 from the first surface 11a is lower than the height of the surface 23a of the intermediate layer 23 from the first surface 11a. The height of the surface 34c of the non-thinning portion 34a from the first surface 11a is, for example, 100 nm to 5000 nm. The height of the surface 23a of the intermediate layer 23 from the first surface 11a is, for example, in the range of 500 nm to 20000 nm, which is greater than the height of the surface 34c of the non-thinned portion 34a from the first surface 11a. The width of the thinned portion 34b (the distance between the outer edge of the non-thinned portion 34a and the outer edge of the outer edge portion 11c ) is 0.01 times or more the thickness of the substrate 11 . The width of the thinned portion 34b is, for example, 5 μm to 400 μm. The thickness of the substrate 11 is, for example, 500 μm to 800 μm.

於第1鏡面部31,以包圍光透過區域1a之方式形成有第1電極12。第1電極12係藉由於多晶矽層25c摻雜雜質使其低電阻化而形成。於第1鏡面部31,以包含光透過區域1a之方式形成有第2電極13。第2電極13係藉由於多晶矽層25c摻雜雜質使其低電阻化而形成。第2電極13之大小可為包含光透過區域1a之全體之大小,但亦可與光透過區域1a之大小大致相同。The first electrode 12 is formed on the first mirror surface portion 31 so as to surround the light transmission region 1a. The first electrode 12 is formed by doping the polysilicon layer 25c with impurities to lower the resistance. The second electrode 13 is formed on the first mirror surface portion 31 so as to include the light transmission region 1a. The second electrode 13 is formed by lowering the resistance by doping the polysilicon layer 25c with impurities. The size of the second electrode 13 may be the size including the entire light-transmitting region 1a, but may be substantially the same as the size of the light-transmitting region 1a.

於第2鏡面部32形成有第3電極14。第3電極14介隔空隙S與第1電極12及第2電極13對向。第3電極14係藉由於多晶矽層27a摻雜雜質使其低電阻化而形成。The third electrode 14 is formed on the second mirror surface portion 32 . The third electrode 14 faces the first electrode 12 and the second electrode 13 with the gap S interposed therebetween. The third electrode 14 is formed by lowering the resistance by doping the polysilicon layer 27a with impurities.

端子(第1電極端子)15以隔著光透過區域1a而對向之方式設置有一對。各端子15配置於自第2積層體24之表面24a(積層構造部20之主面20s)到達至第1積層體22之貫通孔內。各端子15經由配線12a與第1電極12電性連接。端子15例如由鋁或其合金等之金屬膜形成。A pair of terminals (first electrode terminals) 15 are provided so as to face each other across the light transmission region 1a. Each terminal 15 is arranged in a through hole extending from the surface 24a of the second laminate 24 (the main surface 20s of the laminate structure 20 ) to the first laminate 22 . Each terminal 15 is electrically connected to the first electrode 12 via the wiring 12a. The terminal 15 is formed of, for example, a metal film such as aluminum or its alloy.

端子(第2電極端子)16以隔著光透過區域1a而對向之方式設置有一對。各端子16配置於自第2積層體24之表面24a(積層構造部20之主面20s)至第1積層體22之貫通孔內。各端子16經由配線13a與第2電極13電性連接,且經由配線14a與第3電極14電性連接。端子16例如由鋁或其合金等之金屬膜形成。一對端子15對向之方向與一對端子16對向之方向正交(參照圖1)。A pair of terminals (second electrode terminals) 16 are provided so as to face each other with the light transmission region 1a interposed therebetween. Each terminal 16 is arranged in a through hole extending from the surface 24a of the second laminate 24 (the main surface 20s of the laminate structure 20 ) to the first laminate 22 . Each terminal 16 is electrically connected to the second electrode 13 via the wiring 13a, and is electrically connected to the third electrode 14 via the wiring 14a. The terminal 16 is formed of, for example, a metal film such as aluminum or its alloy. The direction in which the pair of terminals 15 face each other is orthogonal to the direction in which the pair of terminals 16 face each other (see FIG. 1 ).

於第1積層體22之表面22b,設置有溝槽17、18。溝槽17以包圍配線13a中之與端子16之連接部分之方式環狀延伸。溝槽17與第1電極12、配線13a電性絕緣。溝槽18沿第1電極12之內緣環狀延伸。溝槽18與第1電極12及第1電極12之內側之區域(第2電極13)電性絕緣。各溝槽17、18內之區域可為絕緣材料,亦可為空隙。On the surface 22b of the first layered body 22, grooves 17 and 18 are provided. The groove 17 extends annularly so as to surround the connection portion with the terminal 16 in the wiring 13a. The trench 17 is electrically insulated from the first electrode 12 and the wiring 13a. The groove 18 extends annularly along the inner edge of the first electrode 12 . The trench 18 is electrically insulated from the first electrode 12 and the region (the second electrode 13 ) inside the first electrode 12 . The regions within each of the trenches 17 and 18 may be insulating materials or voids.

於第2積層體24之表面24a(積層構造部20之主面20s)設置有溝槽19。溝槽19以包圍端子15之方式環狀延伸。溝槽19與端子15、第3電極14電性絕緣。溝槽19內之區域可為絕緣材料,亦可為空隙。The groove|channel 19 is provided in the surface 24a of the 2nd laminated body 24 (the main surface 20s of the laminated structure part 20). The groove 19 extends annularly so as to surround the terminal 15 . The trench 19 is electrically insulated from the terminal 15 and the third electrode 14 . The area within the trench 19 may be an insulating material or a void.

於基板11之第2表面11b,依序積層有反射防止層41、第3積層體42、中間層43及第4積層體44。反射防止層41及中間層43各自具有與反射防止層21及中間層23同樣之構成。第3積層體42及第4積層體44各自具有以基板11為基準而與第1積層體22及第2積層體24對稱之積層構造。反射防止層41、第3積層體42、中間層43及第4積層體44具有抑制基板11翹曲之功能。On the second surface 11 b of the substrate 11 , the antireflection layer 41 , the third laminate 42 , the intermediate layer 43 , and the fourth laminate 44 are laminated in this order. The antireflection layer 41 and the intermediate layer 43 each have the same configuration as the antireflection layer 21 and the intermediate layer 23 . The third layered body 42 and the fourth layered body 44 each have a layered structure symmetrical to the first layered body 22 and the second layered body 24 with respect to the substrate 11 . The antireflection layer 41 , the third laminate 42 , the intermediate layer 43 , and the fourth laminate 44 have a function of suppressing warpage of the substrate 11 .

第3積層體42、中間層43及第4積層體44沿著外緣部11c之外緣被薄化。即,第3積層體42、中間層43及第4積層體44之中沿著外緣部11c之外緣之部分,與除第3積層體42、中間層43及第4積層體44之中沿著外緣之部分以外之其他部分相比變薄。於本實施形態中,第3積層體42、中間層43及第4積層體44係於自垂直於第1表面11a之方向觀察之情形時於與薄化部34b重合之部分,藉由去除第3積層體42、中間層43及第4積層體44之全部而被薄化。The third layered body 42, the intermediate layer 43, and the fourth layered body 44 are thinned along the outer edge of the outer edge portion 11c. That is, the portion of the third layered body 42 , the intermediate layer 43 , and the fourth layered body 44 along the outer edge of the outer edge portion 11 c is different from that of the third layered body 42 , the intermediate layer 43 , and the fourth layered body 44 . Thinner compared to other parts other than the part along the outer edge. In the present embodiment, the third layered body 42, the intermediate layer 43, and the fourth layered body 44, when viewed from the direction perpendicular to the first surface 11a, overlap with the thinned portion 34b by removing the first layer. All of the 3 layered body 42, the intermediate layer 43, and the fourth layered body 44 are thinned.

於第3積層體42、中間層43及第4積層體44,以包含光透過區域1a之方式設置有開口40a。開口40a具有與光透過區域1a之大小大致相同之徑。開口40a於光出射側開口,開口40a之底面到達至反射防止層41。The opening 40a is provided in the 3rd laminated body 42, the intermediate layer 43, and the 4th laminated body 44 so that the light transmission area|region 1a may be included. The opening 40a has a diameter substantially the same as the size of the light transmitting region 1a. The opening 40 a is opened on the light exit side, and the bottom surface of the opening 40 a reaches the anti-reflection layer 41 .

於第4積層體44之光出射側之表面形成有遮光層45。遮光層45例如由鋁等構成。於遮光層45之表面及開口40a之內面形成有保護層46。保護層46被覆第3積層體42、中間層43、第4積層體44及遮光層45之外緣,且被覆外緣部11c上之反射防止層41。保護層46例如由氧化鋁構成。另,藉由將保護層46之厚度設為1 nm~100 nm(例如,30 nm左右),可忽視保護層46之光學性影響。A light shielding layer 45 is formed on the surface of the fourth layered body 44 on the light exit side. The light shielding layer 45 is made of, for example, aluminum or the like. A protective layer 46 is formed on the surface of the light shielding layer 45 and the inner surface of the opening 40a. The protective layer 46 covers the outer edges of the third laminate 42 , the intermediate layer 43 , the fourth laminate 44 , and the light shielding layer 45 , and covers the antireflection layer 41 on the outer edge portion 11 c . The protective layer 46 is made of, for example, aluminum oxide. In addition, by setting the thickness of the protective layer 46 to be 1 nm to 100 nm (for example, about 30 nm), the optical influence of the protective layer 46 can be ignored.

於如以上般構成之法布里-珀羅干涉濾波器1中,若經由端子15、16於第1電極12與第3電極14之間施加電壓,會於第1電極12與第3電極14之間產生與該電壓對應之靜電力。藉由該靜電力,將第2鏡面部32朝固定於基板11之第1鏡面部31側牽引,而調整第1鏡面部31與第2鏡面部32之距離。如此,於法布里-珀羅干涉濾波器1中,第1鏡面部31與第2鏡面部32之距離為可變。In the Fabry-Perot interference filter 1 configured as above, when a voltage is applied between the first electrode 12 and the third electrode 14 via the terminals 15 and 16, the first electrode 12 and the third electrode 14 are applied. An electrostatic force corresponding to the voltage is generated between them. The second mirror surface portion 32 is pulled toward the first mirror surface portion 31 fixed to the substrate 11 by the electrostatic force, and the distance between the first mirror surface portion 31 and the second mirror surface portion 32 is adjusted. In this way, in the Fabry-Perot interference filter 1, the distance between the first mirror portion 31 and the second mirror portion 32 is variable.

透過法布里-珀羅干涉濾波器1之光之波長依存於光透過區域1a中之第1鏡面部31與第2鏡面部32之距離。因此,藉由調整施加於第1電極12與第3電極14之間之電壓,可適當選擇透過之光之波長。此時,第2電極13與第3電極14為相同電位。因此,第2電極13於光透過區域1a中作為用於將第1鏡面部31及第2鏡面部32保持為平坦之補償電極而發揮功能。The wavelength of the light transmitted through the Fabry-Perot interference filter 1 depends on the distance between the first mirror portion 31 and the second mirror portion 32 in the light transmission region 1a. Therefore, by adjusting the voltage applied between the first electrode 12 and the third electrode 14, the wavelength of the transmitted light can be appropriately selected. At this time, the second electrode 13 and the third electrode 14 are at the same potential. Therefore, the second electrode 13 functions as a compensation electrode for keeping the first mirror portion 31 and the second mirror portion 32 flat in the light transmission region 1a.

於法布里-珀羅干涉濾波器1中,例如,藉由一面使施加於法布里-珀羅干涉濾波器1之電壓變化(即,於法布里-珀羅干涉濾波器1中使第1鏡面部31與第2鏡面部32之距離變化),一面藉由光檢測器檢測透過法布里-珀羅干涉濾波器1之光透過區域1a之光,可獲得分光光譜。In the Fabry-Perot interference filter 1, for example, the voltage applied to the Fabry-Perot interference filter 1 is changed by one side (that is, in the Fabry-Perot interference filter 1) The distance between the first mirror portion 31 and the second mirror portion 32 is varied), and a spectral spectrum can be obtained while detecting the light transmitted through the light transmission region 1a of the Fabry-Perot interference filter 1 by a photodetector.

如此,於積層構造部20設置有膜片構造部M,其具有介隔空隙S而相互對向且彼此之距離為可變之第1鏡面部31及第2鏡面部32、及主面20s之一部分(此處為中心側之圓形狀之區域)。膜片構造部M自與主面20s交叉(正交)之方向觀察,為與積層構造部20之中間層23不重疊之部分。即,自與主面20s交叉(正交)之方向觀察時之膜片構造部M之外形係由中間層23之內緣規定,此處為圓形狀(參照圖1)。In this way, the laminated structure portion 20 is provided with the diaphragm structure portion M having the first mirror portion 31 and the second mirror portion 32 and the main surface 20s which face each other with the gap S interposed therebetween, and the distance from each other is variable. A part (here, the circle-shaped area on the center side). The diaphragm structure portion M is a portion that does not overlap with the intermediate layer 23 of the laminated structure portion 20 when viewed from a direction intersecting (orthogonal) to the main surface 20s. That is, the outer shape of the diaphragm structure portion M when viewed from the direction intersecting (orthogonal) to the main surface 20s is defined by the inner edge of the intermediate layer 23, and here is a circular shape (see FIG. 1 ).

於本實施形態中,膜片構造部M自與主面20s交叉(正交)之方向觀察,設置為介置於一對端子15之間、一對端子16之間及端子15與端子16之間。換言之,於該例中,一對端子15、一對端子16及端子15、16配置為隔著膜片構造部M而對向。又,端子15、16自與主面20s交叉(正交)之方向觀察位於膜片構造部M之外側。In the present embodiment, the diaphragm structure portion M is disposed so as to be interposed between the pair of terminals 15 , between the pair of terminals 16 , and between the terminals 15 and the terminals 16 when viewed from the direction intersecting (orthogonal) with the main surface 20s. between. In other words, in this example, the pair of terminals 15 , the pair of terminals 16 , and the terminals 15 and 16 are arranged so as to face each other with the diaphragm structure portion M interposed therebetween. In addition, the terminals 15 and 16 are located outside the diaphragm structure portion M when viewed from a direction intersecting (orthogonal) to the main surface 20s.

作為一例,端子15自與主面20s交叉(正交)之方向觀察,設置於矩形狀之積層構造部20之4個角部中之對角線上之一對角部20c。又,作為一例,端子16自與主面20s交叉(正交)之方向觀察,設置於矩形狀之積層構造部20之4個角部中之另一對角線上之一對其他角部20d。換言之,端子16配置於與端子15之對向之方向交叉(正交)之軸線上。端子15具有自主面20s突出之頂面15s。端子16具有自主面20s突出之頂面16s。此處,頂面15s、16s與主面20s大致平行。 [吸附夾頭之構成]As an example, the terminal 15 is provided in one diagonal part 20c on the diagonal line among the four corner parts of the rectangular laminated structure part 20 when viewed from the direction intersecting (orthogonal) with the main surface 20s. Moreover, as an example, the terminal 16 is provided in one pair of other corners 20d on the other diagonal of the four corners of the rectangular laminated structure 20 when viewed from a direction intersecting (orthogonal) to the main surface 20s. In other words, the terminal 16 is arranged on an axis intersecting (orthogonal) to the opposing direction of the terminal 15 . The terminal 15 has a top surface 15s protruding from the main surface 20s. The terminal 16 has a top surface 16s protruding from the main surface 20s. Here, the top surfaces 15s and 16s are substantially parallel to the main surface 20s. [Constitution of suction chuck]

接著,對用於吸附以上之法布里-珀羅干涉濾波器1之吸附夾頭進行說明。本實施形態之吸附夾頭例如可使用於自藉由切斷晶圓而製造之法布里-珀羅干涉濾波器1之晶片群中拾取1個晶片且搬送至特定位置之情形,及拾取載置於特定位置之法布里-珀羅干涉濾波器1且進而搬送至安裝部位之情形等。Next, the suction chuck for suctioning the above-mentioned Fabry-Perot interference filter 1 will be described. The suction chuck of the present embodiment can be used, for example, to pick up one chip from the group of chips of the Fabry-Perot interference filter 1 manufactured by cutting wafers and transfer it to a specific position, and to pick up a load The case where the Fabry-Perot interference filter 1 is placed in a specific position and is further transported to the installation site.

圖4、5係顯示本實施形態之吸附夾頭之圖。圖4係仰視圖,圖5係沿圖4之V-V線之剖視圖。如圖4、圖5所示,吸附夾頭100具備本體部110、延伸部120及一對接觸部130。此處,本體部110、延伸部120及接觸部130彼此形成為一體,但亦可各自單獨構成並接合。4 and 5 are diagrams showing the suction chuck of this embodiment. FIG. 4 is a bottom view, and FIG. 5 is a cross-sectional view taken along line V-V of FIG. 4 . As shown in FIGS. 4 and 5 , the suction chuck 100 includes a main body portion 110 , an extension portion 120 , and a pair of contact portions 130 . Here, the main body portion 110 , the extension portion 120 and the contact portion 130 are formed integrally with each other, but they may be separately constructed and joined together.

本體部110例如呈長方體狀。本體部110具有表面111、及與表面111相反側之表面112。延伸部120以自表面111突出之方式設置於表面111,沿與表面111交叉之方向延伸。延伸部120例如自與表面111交叉之方向觀察,為具有較本體部110之一邊之長度更短之直徑之圓柱狀,配置於較表面111之外緣更內側。由此,表面111之外形為矩形狀,且,內緣呈圓形狀之環狀。延伸部120例如可於將吸附夾頭100連接於用於驅動吸附夾頭100之裝置(未圖示)時使用。The main body portion 110 has, for example, a rectangular parallelepiped shape. The body portion 110 has a surface 111 and a surface 112 on the opposite side of the surface 111 . The extension portion 120 is disposed on the surface 111 in a manner of protruding from the surface 111 , and extends in a direction crossing the surface 111 . The extension portion 120 is, for example, viewed from the direction intersecting the surface 111 , and has a cylindrical shape with a diameter shorter than the length of one side of the body portion 110 , and is disposed more inward than the outer edge of the surface 111 . Therefore, the outer shape of the surface 111 is rectangular, and the inner edge is a circular ring shape. The extension portion 120 can be used, for example, when connecting the suction chuck 100 to a device (not shown) for driving the suction chuck 100 .

表面112為與法布里-珀羅干涉濾波器1之外形對應之形狀,例如矩形狀(舉例如正方形狀)。接觸部130以自表面112突出之方式設置於表面112。接觸部130係於吸附法布里-珀羅干涉濾波器1時接觸於法布里-珀羅干涉濾波器1之部分。於本體部110、延伸部120及接觸部130,以遍及本體部110、延伸部120及接觸部130之全長而延伸之方式設置有吸氣孔140。吸氣孔140於接觸部130之與表面112為相反側之表面(後述之接觸面131)開口,且於延伸部120之與本體部110為相反側之端部開口。吸氣孔140可經由延伸部120側之開口而連接於泵等吸氣裝置(未圖示)。另,吸氣孔140亦可不設置為遍及本體部110及延伸部120之全長而延伸。例如,吸氣孔140可到達至本體部110之外側面(與表面112交叉之面)而形成開口。進而,吸氣孔140亦可不到達至本體部110而是到達至接觸部130之外側面(與後述之接觸面131交叉之面)而形成開口。於該情形時,吸氣孔140可經由本體部110或接觸部130之外側面之開口而連接於吸氣裝置。The surface 112 has a shape corresponding to the outer shape of the Fabry-Perot interference filter 1 , such as a rectangular shape (for example, a square shape). The contact portion 130 is disposed on the surface 112 so as to protrude from the surface 112 . The contact portion 130 is a portion that contacts the Fabry-Perot interference filter 1 when the Fabry-Perot interference filter 1 is adsorbed. The main body portion 110 , the extension portion 120 and the contact portion 130 are provided with air intake holes 140 extending over the entire lengths of the main body portion 110 , the extension portion 120 and the contact portion 130 . The suction hole 140 opens on the surface (contact surface 131 to be described later) of the contact portion 130 on the opposite side to the surface 112 , and opens on the end portion of the extension portion 120 on the opposite side from the main body portion 110 . The suction hole 140 can be connected to a suction device (not shown) such as a pump through an opening on the side of the extension part 120 . In addition, the air intake hole 140 may not be provided to extend over the entire length of the main body portion 110 and the extension portion 120 . For example, the suction hole 140 may reach the outer side surface of the body portion 110 (the surface intersecting with the surface 112 ) to form an opening. Furthermore, the suction hole 140 may not reach the main body part 110 but reach the outer side surface of the contact part 130 (a surface intersecting with the contact surface 131 described later) to form an opening. In this case, the suction hole 140 can be connected to the suction device through the opening on the outer surface of the body portion 110 or the contact portion 130 .

接觸部130彼此對向且彼此分開而配置。自與表面112交叉(正交)之方向觀察時之接觸部130之形狀,作為一例,呈將矩形之1個角部向內側凸出之圓弧狀之形狀。此處,接觸部130設為彼此對向之側之邊緣130e為圓弧狀。吸氣孔140係自接觸部130之開口(用於吸氣之開口)141之各者向表面111延伸,於本體部110內連接成一個並一體化,且延伸至延伸部120。因此,吸氣孔140之延伸部120側之開口為1個。The contact parts 130 are arranged to face each other and to be spaced apart from each other. The shape of the contact portion 130 when viewed from a direction intersecting (orthogonal) to the surface 112 is, as an example, an arcuate shape in which one corner portion of a rectangle is protruded inward. Here, the edges 130e on the opposite sides of the contact portions 130 are arc-shaped. The suction holes 140 extend from each of the openings (openings for suction) 141 of the contact portion 130 to the surface 111 , are connected and integrated in the body portion 110 , and extend to the extension portion 120 . Therefore, the number of openings on the extension portion 120 side of the suction hole 140 is one.

此處,吸附夾頭100進而具備一對引導部150。引導部150以自表面112突出之方式設置於表面112。引導部150彼此對向且彼此分開而配置。更具體而言,引導部150配置於與接觸部130之對向之方向交叉之軸線上。作為一例,自與表面112交叉(正交)之方向觀察時之引導部150之形狀為L字狀。引導部150以相對於接觸部130對向之方向之軸線對稱之方式彼此180°轉向而配置。此處,引導部150係以由一對引導部150規定1個矩形(正方形)之方式配置。Here, the suction chuck 100 further includes a pair of guide portions 150 . The guide portion 150 is disposed on the surface 112 so as to protrude from the surface 112 . The guide portions 150 are arranged to face each other and to be spaced apart from each other. More specifically, the guide portion 150 is arranged on an axis that intersects with the opposing direction of the contact portion 130 . As an example, the shape of the guide portion 150 when viewed from a direction intersecting (orthogonal) to the surface 112 is an L-shape. The guide portions 150 are arranged to be turned 180° with respect to the axis of the direction in which the contact portion 130 faces each other so as to be symmetric. Here, the guide parts 150 are arranged so that one rectangle (square) is defined by the pair of guide parts 150 .

圖6係顯示圖4、5所示之吸附夾頭吸附法布里-珀羅干涉濾波器之狀態之模式圖。圖6係仰視圖(自表面112側觀察之圖),將法布里-珀羅干涉濾波器之一部分簡化並以虛線表示。如圖5、6所示,接觸部130之與表面112為相反側之表面設為與端子15接觸之接觸面(第1接觸面)131。接觸面131與接觸部130之配置對應,以對應於端子15之方式彼此分開而配置,且接觸於端子15之各者。此處,接觸面131接觸於端子15之頂面15s。此處,吸氣孔140之開口141於接觸面131之各者各設置1個。FIG. 6 is a schematic view showing a state in which the Fabry-Perot interference filter is adsorbed by the adsorption chuck shown in FIGS. 4 and 5 . FIG. 6 is a bottom view (viewed from the side of the surface 112 ), and a part of the Fabry-Perot interference filter is simplified and represented by a dashed line. As shown in FIGS. 5 and 6 , the surface of the contact portion 130 on the opposite side to the surface 112 is set as a contact surface (first contact surface) 131 that is in contact with the terminal 15 . The contact surfaces 131 and the contact portions 130 correspond to the arrangement, are arranged apart from each other in a manner corresponding to the terminals 15 , and are in contact with each of the terminals 15 . Here, the contact surface 131 is in contact with the top surface 15s of the terminal 15 . Here, one opening 141 of the suction hole 140 is provided on each of the contact surfaces 131 .

於接觸面131與端子15(頂面15s)接觸之狀態(以下,有時僅稱為「接觸狀態」)下,開口141與端子15部分地偏移。更具體而言,此處,開口141為圓形,其中心於端子15對向之方向之軸線上朝端子15之外側(與膜片構造部M為相反側)偏移。藉此,開口141之接觸部130相互對向之側之一部分重疊於端子15,且開口141之相反側之其餘部分自端子15偏離。另,於接觸狀態下,表面112與主面20s係彼此對向,且彼此大致平行。另,於上述之例中,對開口141之中心朝端子15之外側偏移之情形進行例示。然而,藉由將開口141之中心以較端子15之中心更外側且不自端子15偏離之程度偏移,仍會有開口141之一部分與端子15重疊且其餘部分自端子15偏離之情形。又,此處之偏移意味著產生偏離(偏差)。In a state in which the contact surface 131 is in contact with the terminal 15 (top surface 15s ) (hereinafter, it may be simply referred to as a "contact state"), the opening 141 and the terminal 15 are partially displaced. More specifically, here, the opening 141 is circular, and the center of the opening 141 is offset toward the outside of the terminal 15 (opposite to the diaphragm structure portion M) on the axis in the direction in which the terminal 15 faces. Thereby, a portion of the mutually opposite sides of the contact portions 130 of the opening 141 overlaps the terminal 15 , and the remaining portion of the opposite side of the opening 141 is deviated from the terminal 15 . In addition, in the contact state, the surface 112 and the main surface 20s face each other and are substantially parallel to each other. In addition, in the above-mentioned example, the case where the center of the opening 141 is shifted to the outer side of the terminal 15 is illustrated. However, by offsetting the center of the opening 141 further outside the center of the terminal 15 and not deviating from the terminal 15 , there may still be a situation where a part of the opening 141 overlaps the terminal 15 and the rest is deviated from the terminal 15 . In addition, the offset here means that a deviation (deviation) occurs.

如上所述,接觸部130之邊緣130e被設為圓弧狀。藉此,於接觸狀態下,位於接觸部130之膜片構造部M側之邊緣130e、及接觸面131之膜片構造部M側之邊緣131e係以位於膜片構造部M之外側且沿著膜片構造部M之外形之方式形成。此處,邊緣130e、131e以仿照膜片構造部M之外緣之方式形成圓弧狀(即,形成為與膜片構造部M之外緣對應之形狀)。As described above, the edge 130e of the contact portion 130 is formed into a circular arc shape. Therefore, in the contact state, the edge 130e on the side of the diaphragm structure portion M of the contact portion 130 and the edge 131e on the side of the diaphragm structure portion M of the contact surface 131 are located outside the diaphragm structure portion M and along the The diaphragm structure portion M is formed so as to have an outer shape. Here, the edges 130e and 131e are formed in a circular arc shape so as to follow the outer edge of the diaphragm structure portion M (that is, formed in a shape corresponding to the outer edge of the diaphragm structure portion M).

引導部150於接觸狀態下,以於積層構造部20之與設置有端子15之角部20c為另外角部20d之外側沿著該角部20d之方式設置。更具體而言,引導部150於接觸狀態下,以沿著角部20d之外緣之方式彎曲成L字狀而延伸。此處,引導部150於接觸狀態下,自與表面112及主面20s交叉(正交)之方向觀察,位於被覆部33之更外側,且配置於薄化部34b內。The guide portion 150 is provided along the corner portion 20d on the outside of the corner portion 20d between the laminated structure portion 20 and the corner portion 20c where the terminal 15 is provided in the contact state. More specifically, in the contact state, the guide portion 150 is bent in an L-shape so as to extend along the outer edge of the corner portion 20d. Here, when the guide portion 150 is in contact with the surface 112 and the main surface 20s (orthogonal), it is positioned further outside the covering portion 33 and is disposed in the thinned portion 34b.

此處,引導部150距離表面112之高度,與接觸部130距離表面112之高度(表面112與接觸面131之間之距離)大致相同。因此,於接觸狀態下,引導部150不與積層構造部20及法布里-珀羅干涉濾波器1接觸。惟引導部150距離表面112之高度於接觸狀態下,引導部150之與表面112為相反側之面於不與薄化部34b之底面(表面)接觸之範圍內,亦可高於接觸部130距離表面112之高度。於該情形時,於接觸狀態下,引導部150可設為沿主面20s與積層構造部20重疊。 [吸附方法之實施形態]Here, the height of the guide portion 150 from the surface 112 is substantially the same as the height of the contact portion 130 from the surface 112 (the distance between the surface 112 and the contact surface 131 ). Therefore, in the contact state, the guide portion 150 is not in contact with the laminated structure portion 20 and the Fabry-Perot interference filter 1 . However, when the height of the guide portion 150 from the surface 112 is in the contact state, the surface of the guide portion 150 on the opposite side to the surface 112 may be higher than the contact portion 130 within the range not in contact with the bottom surface (surface) of the thinned portion 34b. Height from surface 112. In this case, in the contact state, the guide portion 150 can be arranged to overlap the laminated structure portion 20 along the main surface 20s. [Embodiment of adsorption method]

接著,使用以上之吸附夾頭100對吸附法布里-珀羅干涉濾波器1之吸附方法之一實施形態進行說明。圖7係顯示本實施形態之吸附方法之步驟之模式性剖面圖。於圖7中,省略第1積層體22及第2積層體24之層構造、及電極等。於該方法中,首先,如圖7之(a)所示,對法布里-珀羅干涉濾波器1配置吸附夾頭100(第1步驟)。於該第1步驟中,以吸附夾頭100之本體部110之表面112與積層構造部20(及膜片構造部M)之主面20s對向之方式,且,以接觸面131之各者與端子15之各者對向之方式,配置吸附夾頭100。Next, an embodiment of an adsorption method for adsorbing the Fabry-Perot interference filter 1 will be described using the above-mentioned adsorption chuck 100 . FIG. 7 is a schematic cross-sectional view showing the steps of the adsorption method of the present embodiment. In FIG. 7, the layer structure of the 1st laminated body 22 and the 2nd laminated body 24, an electrode, etc. are abbreviate|omitted. In this method, first, as shown in FIG. 7( a ), the suction chuck 100 is arranged on the Fabry-Perot interference filter 1 (first step). In the first step, the surface 112 of the main body portion 110 of the suction chuck 100 is opposed to the main surface 20s of the laminated structure portion 20 (and the diaphragm structure portion M), and each of the contact surfaces 131 The suction chuck 100 is arranged so as to face each of the terminals 15 .

接著,如圖7之(b)所示,使吸附夾頭100接觸於法布里-珀羅干涉濾波器1(第2步驟)。於該第2步驟中,使接觸面131之各者接觸於端子15之各者。尤其,於此處,使接觸面131接觸於端子15之頂面15s。藉此,於表面112與主面20s之間形成空間R。如圖6所示,邊緣131e位於膜片構造部M之外側,且沿著膜片構造部M之外緣。又,如圖6、7所示,開口141與端子15部分地偏移。進而,引導部150於與積層構造部20之設置有端子15之角部20c不同之角部20d之外側沿著角部20d。該等係由吸附夾頭100之構造及於第1步驟中相對之配置實現。Next, as shown in FIG. 7( b ), the suction chuck 100 is brought into contact with the Fabry-Perot interference filter 1 (second step). In this second step, each of the contact surfaces 131 is brought into contact with each of the terminals 15 . In particular, here, the contact surface 131 is brought into contact with the top surface 15s of the terminal 15 . Thereby, the space R is formed between the surface 112 and the main surface 20s. As shown in FIG. 6 , the edge 131e is located on the outer side of the membrane structure portion M, and is along the outer edge of the membrane structure portion M. As shown in FIG. Also, as shown in FIGS. 6 and 7 , the opening 141 is partially offset from the terminal 15 . Furthermore, the guide portion 150 is along the corner portion 20d on the outer side of the corner portion 20d different from the corner portion 20c of the laminated structure portion 20 where the terminal 15 is provided. These are realized by the configuration of the suction chuck 100 and the relative arrangement in the first step.

即,於第1步驟中,於接觸狀態下,以接觸面131之邊緣131e位於膜片構造部M之外側且沿著膜片構造部M之外緣之方式配置吸附夾頭100。又,於第1步驟中,於接觸狀態下,以開口141與端子15部分偏移,且引導部150於積層構造部20之設置有與端子15之角部20c不同之角部20d之外側沿著著角部20d之方式配置吸附夾頭100。That is, in the first step, in the contact state, the suction chuck 100 is arranged so that the edge 131e of the contact surface 131 is located outside the diaphragm structure part M and along the outer edge of the diaphragm structure part M. Furthermore, in the first step, in the contact state, the opening 141 and the terminal 15 are partially offset, and the guide portion 150 is provided on the laminated structure portion 20 with the outer edge of the corner portion 20d different from the corner portion 20c of the terminal 15. The suction chuck 100 is arranged so as to touch the corner portion 20d.

於後續之步驟中,藉由經由接觸面131之開口141之吸氣使端子15之各者吸附於接觸面131,藉由吸附夾頭100吸附法布里-珀羅干涉濾波器1。藉此,維持藉由吸附夾頭100吸附保持法布里-珀羅干涉濾波器1之狀態,直到解除經由開口141之吸氣為止。其後,根據需要,於每個吸附夾頭將法布里-珀羅干涉濾波器1搬送至特定位置後,經由開口141解除吸氣,使法布里-珀羅干涉濾波器1自吸附夾頭100脫離。In the subsequent steps, each of the terminals 15 is adsorbed to the contact surface 131 by suction through the opening 141 of the contact surface 131 , and the Fabry-Perot interference filter 1 is adsorbed by the adsorption chuck 100 . Thereby, the state in which the Fabry-Perot interference filter 1 is adsorbed and held by the adsorption chuck 100 is maintained until the suction through the opening 141 is released. Then, if necessary, after the Fabry-Perot interference filter 1 is transported to a specific position for each suction chuck, the suction is released through the opening 141, and the Fabry-Perot interference filter 1 is pulled from the suction chuck. Head 100 disengages.

如以上說明般,作為本實施形態之吸附方法之吸附對象之法布里-珀羅干涉濾波器1具備基板11與設置於基板11之積層構造部20。於積層構造部20設置有:膜片構造部M,其具有介隔空隙S而彼此對向且彼此之距離為可變之第1鏡面部31及第2鏡面部32;及一對端子15,其配置為自與主面20s交叉(正交)之方向觀察隔著膜片構造部M而相互對向。相對於此,於使用於該吸附方法之吸附夾頭100中,突設於本體部110之表面112之接觸部130包含形成有用於吸氣之開口141之接觸面131。且,於第1步驟中,以吸附夾頭100之表面112與法布里-珀羅干涉濾波器1之主面20s對向之方式配置吸附夾頭100。此時,接觸面131之各者與端子15之各者對向。接著,於第2步驟中,使吸附夾頭100接觸於法布里-珀羅干涉濾波器1。此時,使接觸面131之各者接觸於端子15之各者。且,於第3步驟中,藉由吸附夾頭100吸附法布里-珀羅干涉濾波器1。此時,藉由經由接觸面131之開口141之吸氣,將端子15之各者吸附於接觸面131。藉此,於吸附法布里-珀羅干涉濾波器1時,可吸附端子15之限定之範圍。因此,可獲得適度之吸附,其結果,於解除吸附時可穩定地使法布里-珀羅干涉濾波器1脫離。As described above, the Fabry-Perot interference filter 1 that is an adsorption object of the adsorption method of the present embodiment includes the substrate 11 and the laminated structure portion 20 provided on the substrate 11 . The laminated structure part 20 is provided with: a diaphragm structure part M having a first mirror surface part 31 and a second mirror surface part 32 which face each other with a gap S interposed therebetween and whose distance from each other is variable; and a pair of terminals 15, It is arrange|positioned so that it may mutually oppose through the diaphragm structure part M when it sees from the direction which crosses (orthogonally) 20 s of main surfaces. On the other hand, in the suction chuck 100 used in the suction method, the contact portion 130 protruding from the surface 112 of the body portion 110 includes a contact surface 131 formed with an opening 141 for suction. In addition, in the first step, the suction chuck 100 is arranged so that the surface 112 of the suction chuck 100 faces the main surface 20s of the Fabry-Perot interference filter 1 . At this time, each of the contact surfaces 131 faces each of the terminals 15 . Next, in the second step, the suction chuck 100 is brought into contact with the Fabry-Perot interference filter 1 . At this time, each of the contact surfaces 131 is brought into contact with each of the terminals 15 . Then, in the third step, the Fabry-Perot interference filter 1 is adsorbed by the adsorption chuck 100 . At this time, each of the terminals 15 is adsorbed to the contact surface 131 by suction through the opening 141 of the contact surface 131 . Thereby, when the Fabry-Perot interference filter 1 is adsorbed, the limited range of the terminal 15 can be adsorbed. Therefore, moderate adsorption can be obtained, and as a result, the Fabry-Perot interference filter 1 can be stably released at the time of desorption.

又,於吸附夾頭100中,端子15包含自主面20s突出之頂面15s。且,於第2步驟中,使接觸面131接觸於頂面15s。因此,於第2步驟中,使接觸部130之接觸面131接觸於較膜片構造部M更突出之端子15。因此,於吸附時,吸附夾頭100不接觸於膜片構造部M,或即便接觸亦降低對膜片構造部M之負荷。因此,於吸附法布里-珀羅干涉濾波器1時,可避免膜片構造部M破損,抑制法布里-珀羅干涉濾波器1之不良品產生。In addition, in the suction chuck 100, the terminal 15 includes a top surface 15s protruding from the main surface 20s. And, in the second step, the contact surface 131 is brought into contact with the top surface 15s. Therefore, in the second step, the contact surface 131 of the contact portion 130 is brought into contact with the terminal 15 protruding from the diaphragm structure portion M. As shown in FIG. Therefore, during suction, the suction chuck 100 does not come into contact with the diaphragm structure portion M, or even if it contacts, the load on the diaphragm structure portion M is reduced. Therefore, when the Fabry-Perot interference filter 1 is adsorbed, the diaphragm structure portion M can be prevented from being damaged, and the occurrence of defective products of the Fabry-Perot interference filter 1 can be suppressed.

又,於吸附夾頭100中,於接觸面131接觸於端子15之狀態下,位於接觸部130及接觸面131之膜片構造部M側之邊緣130e、131e形成為與膜片構造部M之外緣對應之形狀。且,於第1步驟中,於接觸面131接觸於端子15之狀態下,以邊緣130e、131e位於膜片構造部M之外側且沿著膜片構造部M之外形之方式配置吸附夾頭100。因此,於吸附法布里-珀羅干涉濾波器1時,可避免對膜片構造部M之接觸。In addition, in the suction chuck 100, when the contact surface 131 is in contact with the terminal 15, the contact portion 130 and the edges 130e and 131e of the contact surface 131 on the side of the diaphragm structure portion M are formed to be in contact with the diaphragm structure portion M. The shape corresponding to the outer edge. Furthermore, in the first step, in a state where the contact surface 131 is in contact with the terminal 15 , the suction chuck 100 is arranged such that the edges 130e and 131e are located outside the diaphragm structure portion M and along the outer shape of the diaphragm structure portion M. . Therefore, when the Fabry-Perot interference filter 1 is adsorbed, the contact with the diaphragm structure portion M can be avoided.

尤其,於吸附夾頭100中,自與主面20s交叉(正交)之方向觀察,膜片構造部M呈圓形狀,邊緣130e、131e仿照膜片構造部M之外緣形成為圓弧狀。因此,於吸附法布里-珀羅干涉濾波器1時,可確實地避免對膜片構造部M接觸。In particular, in the suction chuck 100, when viewed from a direction intersecting (orthogonal) to the main surface 20s, the diaphragm structure portion M has a circular shape, and the edges 130e and 131e are formed in a circular arc shape following the outer edge of the diaphragm structure portion M. . Therefore, when the Fabry-Perot interference filter 1 is adsorbed, the contact with the diaphragm structure portion M can be surely avoided.

又,於吸附方法中,於第1步驟中,以吸氣孔140之接觸面131之開口141於接觸面131接觸於端子15之狀態下與端子15部分地偏移之方式配置吸附夾頭100。因此,可避免吸附力過大,更穩定地使法布里-珀羅干涉濾波器1脫離。In addition, in the suction method, in the first step, the suction chuck 100 is arranged such that the opening 141 of the contact surface 131 of the suction hole 140 is partially offset from the terminal 15 in a state where the contact surface 131 is in contact with the terminal 15 . Therefore, it is possible to prevent the adsorption force from being too large, and to detach the Fabry-Perot interference filter 1 more stably.

又,吸附夾頭100於與自一接觸面131朝向另一接觸面131之方向交叉之軸線上,具備以自表面112突出之方式設置於表面112之引導部150。端子15自與主面20s交叉(正交)之方向觀察分別設置於積層構造部20之角部20c。且,於第1步驟中,以引導部150於接觸狀態下於與積層構造部20之設置有端子15之角部20c為另外角部20d之外側沿著另外角部20d之方式,配置吸附夾頭100。因此,藉由引導部150限制法布里-珀羅干涉濾波器1之姿勢之變化,而可穩定地加以保持及脫離。In addition, the suction chuck 100 is provided with a guide portion 150 provided on the surface 112 so as to protrude from the surface 112 on an axis that intersects with the direction from one contact surface 131 to the other contact surface 131 . The terminals 15 are respectively provided at the corners 20c of the build-up structure portion 20 when viewed from the direction intersecting (orthogonal) to the main surface 20s. Furthermore, in the first step, the suction clip is arranged in such a manner that the guide portion 150 is in contact with the corner portion 20c of the laminated structure portion 20 where the terminal 15 is provided, and the outer side of the other corner portion 20d is arranged along the other corner portion 20d. Head 100. Therefore, the change of the posture of the Fabry-Perot interference filter 1 is restricted by the guide portion 150, so that it can be held and released stably.

進而,於吸附夾頭100中,引導部150於接觸面131接觸於端子15之狀態下,以沿著角部20d之外緣之方式彎曲而延伸。因此,藉由引導部150,限制法布里-珀羅干涉濾波器1沿主面20s於平面內旋轉,而可更穩定地加以保持及脫離。 [變化例]Furthermore, in the suction chuck 100 , the guide portion 150 is bent and extended so as to follow the outer edge of the corner portion 20 d in a state in which the contact surface 131 is in contact with the terminal 15 . Therefore, the guide portion 150 restricts the Fabry-Perot interference filter 1 from rotating in the plane along the main surface 20s, so that it can be held and released more stably. [Variation example]

以上之實施形態係說明本發明之一態樣之吸附方法之一實施形態者。因此,本發明之一態樣之吸附方法並不限定於上述之方法,可採用使用將上述之吸附夾頭100任意變形之方法。繼而,對吸附夾頭之變化例進行說明。The above embodiment is to describe one embodiment of the adsorption method of one aspect of the present invention. Therefore, the adsorption method of one aspect of the present invention is not limited to the above-mentioned method, and a method of arbitrarily deforming the above-mentioned adsorption chuck 100 can be adopted. Next, a modification of the suction chuck will be described.

圖8係顯示變化例之吸附夾頭吸附法布里-珀羅干涉濾波器之狀態之模式圖。圖8係仰視圖(自表面112側觀察之圖),將法布里-珀羅干涉濾波器之一部分簡化並以虛線表示。如圖8所示,於該例中,吸附夾頭100不具備引導部150。如此,吸附夾頭100只要構成為吸附隔著膜片構造部M而彼此對向之一對端子15,無需設置引導部150即可進行穩定之吸附、保持。另,於吸附夾頭100中,亦可構成為吸附隔著膜片構造部M而彼此對向之一對端子15、16。FIG. 8 is a schematic view showing a state in which the Fabry-Perot interference filter is adsorbed by the adsorption chuck of the modified example. FIG. 8 is a bottom view (viewed from the side of the surface 112 ), and a part of the Fabry-Perot interference filter is simplified and represented by a dotted line. As shown in FIG. 8 , in this example, the suction chuck 100 does not include the guide portion 150 . In this way, as long as the suction chuck 100 is configured to suction a pair of terminals 15 facing each other across the diaphragm structure portion M, stable suction and holding can be performed without providing the guide portion 150 . In addition, the suction chuck 100 may be configured to suction a pair of terminals 15 and 16 facing each other with the diaphragm structure portion M interposed therebetween.

圖9係顯示另一變化例之吸附夾頭吸附法布里-珀羅干涉濾波器之狀態之模式圖。圖9係仰視圖(自表面112側觀察之圖),將法布里-珀羅干涉濾波器之一部分簡化並以虛線表示。如圖9所示,於該例中,吸附夾頭100進而具備以自表面112突出之方式設置於表面112之一對接觸部160。接觸部160配置於與自一接觸面131朝向另一接觸面131之方向交叉之軸線上。接觸部160於接觸狀態下,配置於與積層構造部20之角部20d對應之位置。FIG. 9 is a schematic view showing the state in which the Fabry-Perot interference filter is adsorbed by the adsorption chuck in another modification. FIG. 9 is a bottom view (viewed from the side of the surface 112 ), and a part of the Fabry-Perot interference filter is simplified and represented by a dashed line. As shown in FIG. 9 , in this example, the suction chuck 100 further includes a pair of contact portions 160 disposed on the surface 112 in a manner of protruding from the surface 112 . The contact portion 160 is disposed on an axis that intersects with the direction from one contact surface 131 to the other contact surface 131 . The contact portion 160 is arranged at a position corresponding to the corner portion 20d of the laminated structure portion 20 in the contact state.

接觸部160各自配置為與端子16對應,且包含接觸於端子16之接觸面(第2接觸面)161。接觸面161彼此分開。吸氣孔140進而於該接觸面161開口(設置有用於吸氣之開口141)。即使於接觸面161中,開口141亦可配置為於接觸狀態下與端子16部分地偏移。於使用該吸附夾頭100之情形時,於吸附方法之第1步驟中,以接觸面161之各者進而與端子16之各者對向之方式配置吸附夾頭100。又,於第2步驟中,進而使接觸面161之各者接觸於端子16之各者。且,於第3步驟中,藉由經由接觸面161之開口141之吸氣進而使端子16之各者吸附於接觸面161。根據該變化例,能夠經由配置於彼此位置不同之至少3點(此處為4點)之開口141進行吸附,可更穩定地吸附、保持法布里-珀羅干涉濾波器1。Each of the contact portions 160 is arranged to correspond to the terminal 16 and includes a contact surface (second contact surface) 161 that is in contact with the terminal 16 . The contact surfaces 161 are separated from each other. The suction hole 140 is further opened on the contact surface 161 (an opening 141 for suction is provided). Even in the contact surface 161, the opening 141 may be configured to be partially offset from the terminal 16 in the contact state. When the suction chuck 100 is used, in the first step of the suction method, the suction chuck 100 is arranged such that each of the contact surfaces 161 and each of the terminals 16 face each other. Furthermore, in the second step, each of the contact surfaces 161 is further brought into contact with each of the terminals 16 . And, in the third step, each of the terminals 16 is adsorbed to the contact surface 161 by suction through the opening 141 of the contact surface 161 . According to this modification, suction can be performed through the openings 141 arranged at at least three points (here, four points) at different positions from each other, and the Fabry-Perot interference filter 1 can be more stably suctioned and held.

另,於圖9之例中,接觸部130、160及接觸面131、161自與表面112交叉(正交)之方向觀察,形成為矩形狀。即,於此處,接觸部130、160之彼此對向之側(接觸狀態下之膜片構造部M側)之邊緣130e、160e及接觸面131、161之彼此對向之側(接觸狀態下之膜片構造部M側)之邊緣131e、161e不設為圓弧狀之沿膜片構造部M之外形之形狀。即使為此種情形,由於接觸面131、161接觸於端子15、16之頂面15s、16s,故可避免接觸到膜片構造部M,或者即便接觸亦可降低對膜片構造部M之負荷。In addition, in the example of FIG. 9, the contact parts 130 and 160 and the contact surfaces 131 and 161 are seen from the direction crossing (orthogonal) with the surface 112, and are formed in a rectangular shape. That is, here, the edges 130e, 160e of the sides of the contact portions 130, 160 facing each other (the side of the diaphragm structure portion M in the contact state) and the sides of the contact surfaces 131, 161 facing each other (in the contact state) The edges 131e and 161e on the side of the diaphragm structure portion M) are not set to an arc-like shape along the outer shape of the diaphragm structure portion M. Even in this case, since the contact surfaces 131 and 161 are in contact with the top surfaces 15s and 16s of the terminals 15 and 16 , it is possible to avoid contact with the diaphragm structure M, or even in contact, the load on the diaphragm structure M can be reduced. .

另,即使於圖6或圖8所示之例中,亦可採用如圖9之形狀之接觸部130及接觸面131。進而,亦可將接觸部130、160及接觸面131、161之形狀設為其他任意之形狀。Moreover, even in the example shown in FIG. 6 or FIG. 8, the contact part 130 and the contact surface 131 of the shape of FIG. 9 can also be used. Furthermore, the shapes of the contact portions 130 and 160 and the contact surfaces 131 and 161 may be other arbitrary shapes.

對以上之實施形態附記如下。The above-mentioned embodiments are remarked as follows.

[附記1] 一種吸附夾頭,其係用於吸附具備基板、及設置於上述基板上且包含面向與上述基板相反側之主面之積層構造部之法布里-珀羅干涉濾波器者,且具備:本體部,其具有表面;接觸部,其以自上述表面突出之方式設置於上述表面,且包含一對第1接觸面;於上述積層構造部設置有:膜片構造部,其包含介隔空隙而彼此對向且彼此之距離為可變之第1鏡面部及第2鏡面部、及上述主面之一部分;及一對第1電極端子,其自與上述主面交叉之方向觀察,以隔著上述膜片構造部而彼此對向之方式配置。於上述本體部及上述接觸部,形成遍及上述本體部及上述接觸部延伸之吸氣孔。上述第1接觸面以對應於上述第1電極端子之各者之方式彼此分開而配置,且接觸於上述第1電極端子之各者;上述吸氣孔於上述第1接觸面之各者開口。 [附記2] 如附記1記載之吸附夾頭,其中 上述第1電極端子包含自上述主面突出之頂面; 上述第1接觸面接觸於上述頂面。 [附記3] 如附記1或2記載之吸附夾頭,其中 於上述第1接觸面接觸於上述第1電極端子之狀態下,位於上述接觸部及上述第1接觸面之上述膜片構造部側之邊緣係位於上述膜片構造部之外側,且以沿著上述膜片構造部之外形之方式形成。 [附記4] 如附記3記載之吸附夾頭,其中 自與上述主面交叉之方向觀察,上述膜片構造部呈圓形狀;上述邊緣以仿照上述膜片構造部之外緣之方式形成為圓弧狀。 [附記5] 如附記1~4中之任一項記載之吸附夾頭,其中 上述吸氣孔於上述第1接觸面之開口係於上述第1接觸面接觸於上述第1電極端子之狀態下與上述第1電極端子部分地偏移。 [附記6] 如附記1~5中任一項記載之吸附夾頭,其中 於與自一上述第1接觸面朝向另一上述第1接觸面之方向交叉之軸線上,具備以自上述表面突出之方式設置於上述表面之引導部; 上述第1電極端子自與上述主面交叉之方向觀察,分別設置於上述積層構造部之角部; 上述引導部於上述第1接觸面接觸於上述第1電極端子之狀態下,於與上述積層構造部之設置有上述第1電極端子之角部不同之角部之外側以沿著上述不同之角部之方式設置。 [附記7] 如附記6記載之吸附夾頭,其中 上述引導部於上述第1接觸面接觸於上述第1電極端子之狀態下,以沿著上述另外角部之外緣之方式彎曲延伸。 [附記8] 如附記1~7中任一項記載之吸附夾頭,其中 上述法布里-珀羅干涉濾波器具備自與上述主面交叉之方向觀察以隔著上述膜片構造部而彼此對向之方式配置之一對第2電極端子; 上述第2電極端子配置於與上述第1電極端子之對向之方向交叉之軸線上; 上述接觸部以對應於上述第2電極端子之方式配置,且包含接觸於上述第2電極端子之第2接觸面; 上述吸氣孔進而於上述第2接觸面開口。 [產業上之可利用性][Addendum 1] A suction chuck for suctioning a Fabry-Perot interference filter having a substrate and a laminated structure portion disposed on the substrate and including a main surface facing the opposite side of the substrate, and comprising: a main body part, which has a surface; a contact part, which is provided on the surface so as to protrude from the surface, and includes a pair of first contact surfaces; and a membrane structure part is provided on the laminated structure part, which includes an intervening space and A first mirror surface portion and a second mirror surface portion facing each other and having a variable distance from each other, and a part of the above-mentioned main surface; The said diaphragm structure part is arrange|positioned so that it may mutually oppose. In the said main body part and the said contact part, the suction hole which extends over the said main body part and the said contact part is formed. The first contact surfaces are spaced apart from each other to correspond to each of the first electrode terminals, and are in contact with each of the first electrode terminals; the suction holes are open to each of the first contact surfaces. [Addendum 2] The adsorption chuck as described in appendix 1, wherein The first electrode terminal includes a top surface protruding from the main surface; The first contact surface is in contact with the top surface. [Addendum 3] The suction chuck as described in appendix 1 or 2, wherein In a state in which the first contact surface is in contact with the first electrode terminal, the edge located on the side of the diaphragm structure portion of the contact portion and the first contact surface is located outside the diaphragm structure portion, and is located along the edge of the diaphragm structure portion. The above-mentioned diaphragm structure portion is formed in an outer shape. [Addendum 4] The suction chuck as described in appendix 3, wherein When viewed from a direction intersecting with the main surface, the diaphragm structure portion has a circular shape, and the edge is formed in an arc shape in a manner similar to the outer edge of the diaphragm structure portion. [Addendum 5] The adsorption chuck according to any one of appendices 1 to 4, wherein The opening of the suction hole on the first contact surface is partially offset from the first electrode terminal when the first contact surface is in contact with the first electrode terminal. [Addendum 6] The adsorption chuck according to any one of appendixes 1 to 5, wherein On an axis intersecting with the direction from one of the first contact surfaces toward the other of the first contact surfaces, there is provided a guide portion disposed on the surface in a manner of protruding from the surface; The first electrode terminals are respectively provided at the corners of the laminate structure portion when viewed from a direction intersecting with the main surface; In a state where the first contact surface of the guide portion is in contact with the first electrode terminal, an outer side of a corner portion of the laminate structure portion that is different from a corner portion where the first electrode terminal is provided is arranged along the different corner. Partial way setting. [Addendum 7] The suction chuck as described in appendix 6, wherein The guide portion is bent and extended so as to follow the outer edge of the other corner portion in a state in which the first contact surface is in contact with the first electrode terminal. [Addendum 8] The adsorption chuck according to any one of appendices 1 to 7, wherein The above-mentioned Fabry-Perot interference filter includes a pair of second electrode terminals arranged so as to face each other across the above-mentioned diaphragm structure portion when viewed from a direction intersecting the above-mentioned main surface; The second electrode terminal is arranged on an axis that intersects with the opposing direction of the first electrode terminal; The contact portion is arranged in a manner corresponding to the second electrode terminal, and includes a second contact surface contacting the second electrode terminal; The said suction hole is further opened in the said 2nd contact surface. [Industrial Availability]

可提供使法布里-珀羅干涉濾波器能夠穩定地脫離之吸附方法。An adsorption method for stably detaching a Fabry-Perot interference filter can be provided.

1‧‧‧法布里-珀羅干涉濾波器 1a‧‧‧光透過區域 11‧‧‧基板 11a‧‧‧第1表面 11b‧‧‧第2表面 11c‧‧‧外緣部 12‧‧‧第1電極 12a‧‧‧配線 13‧‧‧第2電極 13a‧‧‧配線 14‧‧‧第3電極 14a‧‧‧配線 15‧‧‧端子(第1電極端子) 15s‧‧‧頂面 16‧‧‧端子(第2電極端子) 16s‧‧‧頂面 17‧‧‧溝槽 18‧‧‧溝槽 19‧‧‧溝槽 20‧‧‧積層構造部 20c‧‧‧角部 20d‧‧‧角部(其他角部) 20s‧‧‧主面 21‧‧‧反射防止層 21a‧‧‧側面 22‧‧‧第1積層體 22a‧‧‧側面 22b‧‧‧表面 23‧‧‧中間層 23a‧‧‧表面 23b‧‧‧側面 24‧‧‧第2積層體 24a‧‧‧表面 24b‧‧‧貫通孔 25‧‧‧多晶矽層 25a‧‧‧多晶矽層 25b‧‧‧多晶矽層 25c‧‧‧多晶矽層 26‧‧‧氮化矽層 26a‧‧‧氮化矽層 26b‧‧‧氮化矽層 27‧‧‧多晶矽層 27a‧‧‧多晶矽層 27b‧‧‧多晶矽層 27c‧‧‧多晶矽層 28‧‧‧氮化矽層 28a‧‧‧氮化矽層 28b‧‧‧氮化矽層 31‧‧‧第1鏡面部 32‧‧‧第2鏡面部 33‧‧‧被覆部 34‧‧‧周緣部 34a‧‧‧非薄化部 34b‧‧‧薄化部 34c‧‧‧表面 40a‧‧‧開口 41‧‧‧反射防止層 42‧‧‧第3積層體 43‧‧‧中間層 44‧‧‧第4積層體 45‧‧‧遮光層 46‧‧‧保護層 100‧‧‧吸附夾頭 110‧‧‧本體部 111‧‧‧表面 112‧‧‧表面 120‧‧‧延伸部 130‧‧‧接觸部 130e‧‧‧邊緣 131‧‧‧接觸面(第1接觸面) 131e‧‧‧邊緣 140‧‧‧吸氣孔 141‧‧‧開口 150‧‧‧引導部 160‧‧‧接觸部 160e‧‧‧邊緣 161‧‧‧接觸面(第2接觸面) 161e‧‧‧邊緣 M‧‧‧膜片構造部 R‧‧‧空間 S‧‧‧空隙1‧‧‧Fabry-Perot Interference Filter 1a‧‧‧Light transmission area 11‧‧‧Substrate 11a‧‧‧First surface 11b‧‧‧Second surface 11c‧‧‧Outer edge 12‧‧‧First electrode 12a‧‧‧Wiring 13‧‧‧Second electrode 13a‧‧‧Wiring 14‧‧‧The third electrode 14a‧‧‧Wiring 15‧‧‧Terminal (1st electrode terminal) 15s‧‧‧Top 16‧‧‧Terminal (second electrode terminal) 16s‧‧‧Top 17‧‧‧Groove 18‧‧‧Groove 19‧‧‧Groove 20‧‧‧Laminated Structure Department 20c‧‧‧Corner 20d‧‧‧ corners (other corners) 20s‧‧‧Main side 21‧‧‧Anti-reflection layer 21a‧‧‧Side 22‧‧‧1st layered body 22a‧‧‧Side 22b‧‧‧Surface 23‧‧‧Interlayer 23a‧‧‧Surface 23b‧‧‧Side 24‧‧‧Second laminate 24a‧‧‧Surface 24b‧‧‧Through hole 25‧‧‧Polysilicon layer 25a‧‧‧polysilicon layer 25b‧‧‧polysilicon layer 25c‧‧‧polysilicon layer 26‧‧‧Silicon nitride layer 26a‧‧‧Silicon nitride layer 26b‧‧‧Silicon nitride layer 27‧‧‧Polysilicon Layer 27a‧‧‧polysilicon layer 27b‧‧‧polysilicon layer 27c‧‧‧polysilicon layer 28‧‧‧Silicon nitride layer 28a‧‧‧Silicon nitride layer 28b‧‧‧Silicon nitride layer 31‧‧‧First mirror face 32‧‧‧Second mirror face 33‧‧‧Coated part 34‧‧‧Peripheral 34a‧‧‧Non-thinning part 34b‧‧‧Thinning 34c‧‧‧Surface 40a‧‧‧Opening 41‧‧‧Anti-reflection layer 42‧‧‧The 3rd Laminate 43‧‧‧Interlayer 44‧‧‧The 4th Laminate 45‧‧‧Light shielding layer 46‧‧‧Protective layer 100‧‧‧Adsorption chuck 110‧‧‧Main body 111‧‧‧Surface 112‧‧‧Surface 120‧‧‧Extension 130‧‧‧Contact 130e‧‧‧Edge 131‧‧‧contact surface (first contact surface) 131e‧‧‧Edge 140‧‧‧Suction hole 141‧‧‧Opening 150‧‧‧Guidance Department 160‧‧‧Contact 160e‧‧‧Edge 161‧‧‧contact surface (second contact surface) 161e‧‧‧Edge M‧‧‧Diaphragm structure R‧‧‧Space S‧‧‧void

圖1係本實施形態之法布里-珀羅干涉濾波器之俯視圖。 圖2係圖1所示之法布里-珀羅干涉濾波器之仰視圖。 圖3係沿著圖1之Ⅲ–Ⅲ線之法布里-珀羅干涉濾波器之剖視圖。 圖4係顯示本實施形態之吸附夾頭之圖。 圖5係顯示本實施形態之吸附夾頭之圖。 圖6係顯示圖4、圖5所示之吸附夾頭吸附著法布里-珀羅干涉濾波器之狀態之模式圖。 圖7(a)、(b)係顯示本實施形態之吸附方法之步驟之模式性剖視圖。 圖8係顯示變化例之吸附夾頭吸附著法布里-珀羅干涉濾波器之狀態之模式圖。 圖9係顯示另一變化例之吸附夾頭吸附著法布里-珀羅干涉濾波器之狀態之模式圖。FIG. 1 is a plan view of the Fabry-Perot interference filter of the present embodiment. FIG. 2 is a bottom view of the Fabry-Perot interference filter shown in FIG. 1 . FIG. 3 is a cross-sectional view of the Fabry-Perot interference filter taken along line III-III of FIG. 1 . FIG. 4 is a diagram showing the suction chuck of this embodiment. FIG. 5 is a view showing the suction chuck of this embodiment. FIG. 6 is a schematic view showing a state in which the Fabry-Perot interference filter is adsorbed by the adsorption chuck shown in FIG. 4 and FIG. 5 . 7(a) and (b) are schematic cross-sectional views showing the steps of the adsorption method of the present embodiment. FIG. 8 is a schematic view showing a state in which the Fabry-Perot interference filter is adsorbed by the adsorption chuck of the modified example. FIG. 9 is a schematic view showing a state in which the Fabry-Perot interference filter is adsorbed by the adsorption chuck of another modified example.

1‧‧‧法布里-珀羅干涉濾波器 1‧‧‧Fabry-Perot Interference Filter

15‧‧‧端子(第1電極端子) 15‧‧‧Terminal (1st electrode terminal)

15s‧‧‧頂面 15s‧‧‧Top

16‧‧‧端子(第2電極端子) 16‧‧‧Terminal (second electrode terminal)

16s‧‧‧頂面 16s‧‧‧Top

20c‧‧‧角部 20c‧‧‧Corner

20d‧‧‧角部(其他角部) 20d‧‧‧ corners (other corners)

22‧‧‧第1積層體 22‧‧‧1st layered body

23‧‧‧中間層 23‧‧‧Interlayer

34b‧‧‧薄化部 34b‧‧‧Thinning

100‧‧‧吸附夾頭 100‧‧‧Adsorption chuck

110‧‧‧本體部 110‧‧‧Main body

112‧‧‧表面 112‧‧‧Surface

120‧‧‧延伸部 120‧‧‧Extension

130‧‧‧接觸部 130‧‧‧Contact

130e‧‧‧邊緣 130e‧‧‧Edge

131‧‧‧接觸面(第1接觸面) 131‧‧‧contact surface (first contact surface)

131e‧‧‧邊緣 131e‧‧‧Edge

141‧‧‧開口 141‧‧‧Opening

150‧‧‧引導部 150‧‧‧Guidance Department

M‧‧‧膜片構造部 M‧‧‧Diaphragm structure

Claims (8)

一種吸附方法,其係使用吸附夾頭吸附具備基板、及設置於上述基板上且包含面向與上述基板相反側之主面之積層構造部之法布里-珀羅干涉濾波器者,且具備:第1步驟,其以與上述主面對向之方式配置上述吸附夾頭;第2步驟,其於上述第1步驟之後,使上述吸附夾頭接觸於上述法布里-珀羅干涉濾波器;及第3步驟,其於上述第2步驟之後,藉由上述吸附夾頭吸附上述法布里-珀羅干涉濾波器;上述吸附夾頭具備:本體部,其具有表面;及接觸部,其以自上述表面突出之方式設置於上述表面,且包含形成有用於吸氣之開口之一對第1接觸面;於上述積層構造部設置有:膜片構造部,其包含介隔空隙而彼此對向且彼此之距離為可變之第1鏡面部及第2鏡面部、及上述主面之一部分;及一對第1電極端子,其係自與上述主面交叉之方向觀察時,以隔著上述膜片構造部而彼此對向之方式配置;於上述第1步驟中,以上述表面與上述主面對向且上述第1接觸面之各者與上述第1電極端子之各者對向之方式配置上述吸附夾頭;於上述第2步驟中,使上述第1接觸面之各者接觸於上述第1電極端子之各者;於上述第3步驟中,藉由經由上述第1接觸面之上述開口之吸氣將上述第1電極端子之各者吸附於上述第1接觸面。 An adsorption method, which uses an adsorption chuck to adsorb a substrate and a Fabry-Perot interference filter provided on the substrate and including a laminated structure portion facing a main surface opposite to the substrate, and comprising: The first step is to arrange the suction chuck so as to face the main surface; the second step is to contact the suction chuck with the Fabry-Perot interference filter after the first step; and a third step, after the second step, the Fabry-Perot interference filter is adsorbed by the adsorption chuck; the adsorption chuck is provided with: a main body part having a surface; and a contact part with a It is provided on the surface so as to protrude from the surface, and includes a pair of first contact surfaces formed with an opening for air intake; and on the laminated structure portion is provided: a diaphragm structure portion which faces each other with a gap interposed therebetween. and a first mirror surface part and a second mirror surface part whose distance from each other is variable, and a part of the above-mentioned main surface; The diaphragm structure parts are arranged so as to face each other; in the first step, the surface and the main surface face each other, and each of the first contact surfaces and each of the first electrode terminals face each other. The suction chuck is arranged; in the second step, each of the first contact surfaces is brought into contact with each of the first electrode terminals; in the third step, by the first contact surface through the first contact surface The suction of the opening attracts each of the first electrode terminals to the first contact surface. 如請求項1之吸附方法,其中上述第1電極端子包含自上述主面突出之頂面;於上述第2步驟中,使上述第1接觸面接觸於上述頂面。 The adsorption method of claim 1, wherein the first electrode terminal includes a top surface protruding from the main surface; in the second step, the first contact surface is brought into contact with the top surface. 如請求項1或2之吸附方法,其中於上述第1接觸面接觸於上述第1電極端子之狀態下位於上述第1接觸面之上述膜片構造部側之邊緣係形成為與上述膜片構造部之外緣對應之形狀;於上述第1步驟中,於上述第1接觸面接觸於上述第1電極端子之狀態下,以上述邊緣位於上述膜片構造部之外側且沿著上述膜片構造部之外緣之方式配置上述吸附夾頭。 The adsorption method according to claim 1 or 2, wherein an edge on the side of the diaphragm structure portion of the first contact surface in a state in which the first contact surface is in contact with the first electrode terminal is formed to be in contact with the diaphragm structure In the first step, when the first contact surface is in contact with the first electrode terminal, the edge is located outside the diaphragm structure portion and along the diaphragm structure The above-mentioned suction chuck is arranged in the manner of the outer edge of the part. 如請求項3之吸附方法,其中自與上述主面交叉之方向觀察時,上述膜片構造部呈圓形狀;上述邊緣以仿照上述膜片構造部之外緣之方式形成為圓弧狀。 The adsorption method of claim 3, wherein the diaphragm structure portion has a circular shape when viewed from a direction intersecting the main surface, and the edge is formed in an arc shape following the outer edge of the diaphragm structure portion. 如請求項1或2之吸附方法,其中於上述第1步驟中,於上述第1接觸面接觸於上述第1電極端子之狀態下,以上述開口與上述第1電極端子部分地偏移之方式配置上述吸附夾頭。 The adsorption method of claim 1 or 2, wherein in the first step, in a state where the first contact surface is in contact with the first electrode terminal, the opening and the first electrode terminal are partially offset. Configure the suction chuck above. 如請求項1或2之吸附方法,其中 上述吸附夾頭於與自一上述第1接觸面朝向另一上述第1接觸面之方向交叉之軸線上,具備以自上述表面突出之方式設置於上述表面之引導部;上述第1電極端子係自與上述主面交叉之方向觀察時,分別設置於上述積層構造部之角部;於上述第1步驟中,於上述第1接觸面接觸於上述第1電極端子之狀態下,以上述引導部於上述積層構造部之與設置有上述第1電極端子之角部為另外角部之外側沿著上述另外角部之方式配置上述吸附夾頭。 The adsorption method of claim 1 or 2, wherein The suction chuck is provided with a guide portion provided on the surface so as to protrude from the surface on an axis that intersects with the direction from one of the first contact surfaces toward the other of the first contact surfaces; the first electrode terminal is When viewed from the direction intersecting with the main surface, they are respectively provided at the corners of the laminate structure portion; in the first step, in the state where the first contact surface is in contact with the first electrode terminal, the guide portion is placed in the first step. The said suction chuck is arrange|positioned so that the corner part of the said laminated structure part and the said 1st electrode terminal is provided with the outer side of the said other corner part along the said other corner part. 如請求項6之吸附方法,其中上述引導部於上述第1接觸面接觸於上述第1電極端子之狀態下,以沿著上述另外角部之外緣之方式彎曲延伸。 The adsorption method according to claim 6, wherein the guide portion is bent and extended along the outer edge of the other corner portion in a state in which the first contact surface is in contact with the first electrode terminal. 如請求項1或2之吸附方法,其中上述法布里-珀羅干涉濾波器具備自與上述主面交叉之方向觀察時以隔著上述膜片構造部而彼此對向之方式配置之一對第2電極端子;上述第2電極端子配置於與上述第1電極端子對向之方向交叉之軸線上;上述接觸部包含以與上述第2電極端子對應之方式配置且形成有用於吸氣之開口之第2接觸面;於上述第1步驟中,以上述第2接觸面之各者與上述第2電極端子之各者對向之方式配置上述吸附夾頭;於上述第2步驟中,使上述第2接觸面之各者接觸於上述第2電極端子 之各者;於上述第3步驟中,藉由經由上述第2接觸面之上述開口之吸氣,將上述第2電極端子之各者吸附於上述第2接觸面。The adsorption method according to claim 1 or 2, wherein the Fabry-Perot interference filter includes a pair arranged so as to face each other across the diaphragm structure portion when viewed from a direction intersecting with the main surface a second electrode terminal; the second electrode terminal is arranged on an axis that intersects with the direction facing the first electrode terminal; the contact portion includes an opening for air intake that is arranged in a manner corresponding to the second electrode terminal the second contact surface; in the first step, the suction chuck is arranged in such a way that each of the second contact surface and each of the second electrode terminals face each other; in the second step, the Each of the second contact surfaces is in contact with the above-mentioned second electrode terminal In the third step, each of the second electrode terminals is adsorbed on the second contact surface by suction through the opening of the second contact surface.
TW107140701A 2017-11-17 2018-11-16 adsorption method TWI774875B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-221853 2017-11-17
JP2017221853A JP6899314B2 (en) 2017-11-17 2017-11-17 Adsorption method

Publications (2)

Publication Number Publication Date
TW201923960A TW201923960A (en) 2019-06-16
TWI774875B true TWI774875B (en) 2022-08-21

Family

ID=66539757

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107140701A TWI774875B (en) 2017-11-17 2018-11-16 adsorption method

Country Status (8)

Country Link
US (1) US11947140B2 (en)
EP (1) EP3712930B1 (en)
JP (1) JP6899314B2 (en)
KR (1) KR102558845B1 (en)
CN (1) CN111357092B (en)
FI (1) FI3712930T3 (en)
TW (1) TWI774875B (en)
WO (1) WO2019098141A1 (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004157292A (en) * 2002-11-06 2004-06-03 Sharp Corp Device for conveying liquid crystal array substrate and method for manufacturing liquid crystal display device using the same
TW200412616A (en) * 2003-01-08 2004-07-16 Nikon Corp Exposure device, exposure method, method of making devices, measuring method and measuring device
JP2005509897A (en) * 2001-11-16 2005-04-14 アトメル グルノーブル ソシエテ アノニム Adjustable optical filtering components
TW200537635A (en) * 2004-03-10 2005-11-16 Dainippon Screen Mfg Apparatus and method for removing organic contamination adsorbed onto substrate, and apparatus and method for measuring thickness of thin film formed on substrate
JP2006073839A (en) * 2004-09-03 2006-03-16 Oki Electric Ind Co Ltd Semiconductor device holder and semiconductor device manufactured using the same
TW200722936A (en) * 2005-12-09 2007-06-16 Nikon Corp Laser light source device, exposure method, and device
TW200741917A (en) * 2006-04-27 2007-11-01 Shinkawa Kk Bonding apparatus, and method for sucking circuit board in the same
TW200828456A (en) * 2006-12-21 2008-07-01 Shinkawa Kk Joint apparatus and circuit substrate adsorption method of same
TW201319761A (en) * 2011-10-06 2013-05-16 Asml Netherlands Bv A chuck, a chuck control system, a lithography apparatus and a method of using a chuck
WO2015064749A1 (en) * 2013-10-31 2015-05-07 浜松ホトニクス株式会社 Light-detecting device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0169932B1 (en) * 1984-08-03 1987-04-22 Wilhelm Loh Wetzlar Optikmaschinen GmbH & Co. KG Supporting device for vulnerable objects, in particular optical lenses and other optical elements
JPH0181633U (en) 1987-11-21 1989-05-31
JP2514798Y2 (en) * 1989-12-13 1996-10-23 松下電器産業株式会社 Semiconductor chip suction device
JPH04188840A (en) * 1990-11-22 1992-07-07 Toshiba Corp Die bonding method
JP2008053306A (en) * 2006-08-22 2008-03-06 Ito Denshi Kogyo Kk Manufacturing method of module and of camera module
FI20095976A0 (en) 2009-09-24 2009-09-24 Valtion Teknillinen Micromechanically adjustable Fabry-Perot interferometer and method for its production
KR101422350B1 (en) 2012-10-31 2014-07-23 세메스 주식회사 Method of mounting a collet to a pickup head
JP6260080B2 (en) 2013-01-07 2018-01-17 セイコーエプソン株式会社 Wavelength variable interference filter, method for manufacturing wavelength variable interference filter, optical module, and electronic device
JP6290594B2 (en) 2013-10-31 2018-03-07 浜松ホトニクス株式会社 Photodetector
JP6356427B2 (en) 2014-02-13 2018-07-11 浜松ホトニクス株式会社 Fabry-Perot interference filter
JP6268483B2 (en) 2014-06-03 2018-01-31 旭硝子株式会社 Laminate peeling apparatus, peeling method, and electronic device manufacturing method
JP7039160B2 (en) * 2016-03-09 2022-03-22 浜松ホトニクス株式会社 Photodetector
JP6341959B2 (en) * 2016-05-27 2018-06-13 浜松ホトニクス株式会社 Manufacturing method of Fabry-Perot interference filter
EP3712929B1 (en) * 2017-11-17 2023-09-13 Hamamatsu Photonics K.K. Suction method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005509897A (en) * 2001-11-16 2005-04-14 アトメル グルノーブル ソシエテ アノニム Adjustable optical filtering components
JP2004157292A (en) * 2002-11-06 2004-06-03 Sharp Corp Device for conveying liquid crystal array substrate and method for manufacturing liquid crystal display device using the same
TW200412616A (en) * 2003-01-08 2004-07-16 Nikon Corp Exposure device, exposure method, method of making devices, measuring method and measuring device
TW200537635A (en) * 2004-03-10 2005-11-16 Dainippon Screen Mfg Apparatus and method for removing organic contamination adsorbed onto substrate, and apparatus and method for measuring thickness of thin film formed on substrate
JP2006073839A (en) * 2004-09-03 2006-03-16 Oki Electric Ind Co Ltd Semiconductor device holder and semiconductor device manufactured using the same
TW200722936A (en) * 2005-12-09 2007-06-16 Nikon Corp Laser light source device, exposure method, and device
TW200741917A (en) * 2006-04-27 2007-11-01 Shinkawa Kk Bonding apparatus, and method for sucking circuit board in the same
TW200828456A (en) * 2006-12-21 2008-07-01 Shinkawa Kk Joint apparatus and circuit substrate adsorption method of same
TW201319761A (en) * 2011-10-06 2013-05-16 Asml Netherlands Bv A chuck, a chuck control system, a lithography apparatus and a method of using a chuck
WO2015064749A1 (en) * 2013-10-31 2015-05-07 浜松ホトニクス株式会社 Light-detecting device

Also Published As

Publication number Publication date
US20210364681A1 (en) 2021-11-25
TW201923960A (en) 2019-06-16
EP3712930A4 (en) 2021-08-11
EP3712930B1 (en) 2023-10-18
CN111357092B (en) 2023-07-07
JP2019096641A (en) 2019-06-20
FI3712930T3 (en) 2023-12-20
CN111357092A (en) 2020-06-30
JP6899314B2 (en) 2021-07-07
KR20200085813A (en) 2020-07-15
US11947140B2 (en) 2024-04-02
EP3712930A1 (en) 2020-09-23
KR102558845B1 (en) 2023-07-25
WO2019098141A1 (en) 2019-05-23

Similar Documents

Publication Publication Date Title
US9611142B2 (en) Method for manufacturing electronic component
KR102299845B1 (en) Fabry-Perot interference filter
TWI733816B (en) Fabry-Peru interference filter and manufacturing method of Fabry-Peru interference filter
US10724902B2 (en) Fabry-Perot interference filter
CN111357091B (en) Adsorption method
TWI774875B (en) adsorption method
JP7506801B2 (en) Adsorption Method
TW201447992A (en) EPI-poly etch stop for out of plane spacer defined electrode
TWI780265B (en) Handling method
JP5617801B2 (en) Semiconductor device and manufacturing method thereof
CN115021707A (en) Vibration device

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent