TW200412616A - Exposure device, exposure method, method of making devices, measuring method and measuring device - Google Patents

Abstract

A laser optical characteristic measuring device (16c, 16e) receives a laser beam LB generated by a laser resonant (16a) and measures the optical characteristic of the laser beam to output information related to the optical characteristic. During the exposure, a main control device (50) controls a multiplication energy (an exposure amount) of the laser beam provided to a wafer according to aforementioned information, so as to adjust the exposure amount on the wafer. Therefore, the exposure amount on the wafer can be adjusted according to the optical characteristic. As a result, even though the optical characteristic of the optical laser varies, the exposure amount is not affected, so that a pattern on a mask can be accurately and excellently transferred onto the wafer.

Description

200412616 发明 Description of the invention (invention. The description should state: the technical field to which the invention belongs, the prior art, the content, the embodiments and the drawings are simple and clear) = θ The technical jaw to which the invention belongs: ¾ The invention 7H relates to a * An exposure device, an exposure method, a device manufacturing method, and a measuring method and a measuring device ', and more particularly, it relates to the use of a lithography process to manufacture semiconductor devices (such as integrated circuits), liquid crystal display devices, thin S An exposure device and exposure method used for other micro-parts, etc. 'A method for manufacturing a component using this exposure device, and a measurement method and a measurement device for measuring optical characteristics of a detected optical system using a laser beam. In the prior art, various exposure devices are used in the lithography process for manufacturing micro-devices. In recent years, from the viewpoint of productivity, the step-and-repeat method has been used to reduce the projection exposure device (in other words, the step-by-step method), and the step-and-scan method has been used for the step-and-scan method. Devices (called scanners or scanning steppers), etc., are successive exposure projection exposure devices, which are mainly used as exposure devices. In recent years, the integration of integrated circuits has increased, and the manufacturing of micro-components has required an increase in resolution. For this requirement, in the above-mentioned stepper, the wavelength of the exposure beam (exposure wavelength) is also shortened in order, such as the g-line, I-line, KrF excimer laser light, ArF excimer laser light, etc. of the mercury lamp. general. In the future, a projection exposure apparatus such as a stepper may also have any light source with an oscillation wavelength in the ultraviolet field. For example, a light source that uses the nonlinear optical phenomenon of non-linear light 10918pif.doc / 008 6 200412616 can be used. An excimer laser is a pulsed laser that uses electrical discharge in a laser medium (gas). Generally, the laser light wavelength spectrum line width of an excimer laser is about 50 Opm (5 × 10_1 () meters), but when used as a light source for a semiconductor exposure device, in order to suppress the projection optical system (projection) installed in the exposure device Lens), the spectral line width, FWHM (full width half maximum) must be reduced below lpm (narrow bandwidth). The narrowing of the wavelength can be performed by using a wavelength selection element such as an optical prism, a Fary_perot etalon, a grating, or the like alone, or a combination of these plural elements. The light source 'using a non-linear optical phenomenon does not use the aforementioned wavelength selection element, and it is expected that the spectral line width may be narrowed. The resolution R of the projection exposure device can be expressed by the exposure wavelength λ and the numerical aperture (N · A ·) of the projection optical system as R = k) / NA ·; where k is called the process coefficient (process price) It is called a proportional constant. Therefore, when using light sources with the same wavelength, it is necessary to increase the N · A · 値 of the projection optical system in order to form a finer pattern. In this case, the spectral line width of the laser light is required A narrower bandwidth is required. At present, as far as excimer lasers are concerned, ultra-narrow bandwidth lasers with FWHM of 0.3µm or less have been developed. It is now possible to narrow the bandwidth of this laser light spectral line化 机构 的 淮 # sub-laser, the spectral characteristics of the laser light may change in the long or short term. Yi ’s mouth, the spectral line width will gradually widen due to the deterioration of the wavelength selection element @ 王 见 象 ， Gas mixture of laser gas filled in the laser chamber 10918pif.doc / 008 7 200412616 ratio or charge voltage ratio change, or short-term changes in spectral line width caused by changes in discharge voltage, etc. Figure 9 Is using FWMH to show The tendency of the molecular laser spectral line width to change. Due to the change in the spectral characteristics of the laser light, the resolution characteristics of the exposure device also differ. Figure 10 shows the wafers generally used when evaluating the resolution characteristics of the exposure device ( An example of a photoresist pattern (referred to as a photoresist image) formed on a substrate). Fig. 10 shows a cross-sectional view of a photoresist image. The photoresist image is formed by five lines of width wl and width ws. A line and space pattern (L / S pattern) formed by a gap. In this case, when the original pattern is an l / S pattern with a working ratio of 1: 1, 'under the ideal resolution, wl = ws will be established. When forming a photoresist image as shown in FIG. 10, for example, when the photosensitive part uses a positive resist dissolved in a developing solution and a corresponding positive mask (a combination of cross marks) is used. The spatial image distribution of the laser light irradiated on the wafer's photoresist layer on the wafer surface will be as shown in FIG. 11, and the portion corresponding to the line is “dark” and the rest is “dark”. The contrast between light and dark in Figure 11. In the spatial distribution of the illuminance shown, the illuminance level (ievei) equal to the line width WL and the gap width WS is Ethl. On the other hand, the photoresist has the characteristics of the illuminance and the residual rate after development as shown in FIG. 12 The illuminance is above Eth, and the photoresist will be completely dissolved due to development. In order to make the photoresistance image as shown in Fig. 10 wl = ws, the exposure illuminance Dosel must be controlled so that Ethi = Eth as shown in Fig. N At this time, the photoresist is dissolved at a position where the illuminance crosses E (h | in Fig. Π, and the photoresist is not dissolved in the following places. Therefore, a photoresist image is finally formed as shown in FIG. 10 10918pif.doc / 008 200412616. Although the spectral line width of the laser light is wider than that in Figure 11, after exposure at the same illuminance Dosel as in Figure η, the light intensity distribution of the spatial image corresponding to the wafer surface will be as shown in Figure 13 . This is because the spectral line width of the laser light is widened, and the contrast between the light and dark parts of the space image caused by the aberration (mainly chromatic aberration) of the projection optical system of the exposure device is reduced. In this case, the line width of the illumination Eth is WL, ( < W1) and the gap width is WS ’( < ws). Therefore, a desired pattern cannot be formed. Although such changes in the spectral characteristics have been known before, the amplitude of the changes is small compared to the original spectral line width, so it is not considered to cause problems. However, in recent lasers with extremely narrow bandwidths, the effect of the magnitude of change on the resolution performance of the projection optical system is very interesting. On the other hand, laser light sources using non-linear optical phenomena are also expected to cause changes in spectral line widths due to differences in their tendency to change in the case of excimer lasers. In addition, for a fluorine laser (output wavelength: 257 nm) that is promising as a future exposure light source, it is generally known that a spectral line width of less than 1 pm can be displayed without using a wavelength selection element that narrows the spectral line width. However, the spectral line width will be greatly changed due to the pressure or excitation intensity of the gas (mixed gas such as fluorine gas and ammonia gas) filled in the laser tube. Furthermore, the use of excimer lasers or laser light sources with non-linear optical phenomena, etc., with the shift of the center wavelength of the laser light from a specific wavelength, will also be the same as when the spectral line width becomes larger, corresponding to the spatial image. Light intensity distribution 10918 pif. doc / 008 9 200412616 It is a well-known fact that contrast reduction occurs. These phenomena reduce the yield of microelectronic components such as ICs, and cause obstacles in the use of exposure devices on the mass production lines of microelectronic components such as 1C. SUMMARY OF THE INVENTION Therefore, a first object of the present invention is to provide an exposure device and an exposure method, so that even if the optical characteristics of the laser beam are changed, it will not be affected, and the pattern on the mask can be accurately and excellently Transfer to the substrate. A second object of the present invention is to provide a method for manufacturing a component, which can improve the productivity of microelectronic components. A third object of the present invention is to provide a measuring method and a measuring device so that even if the optical characteristics of the laser beam are changed, they are not affected 'and the optical characteristics of the optical system to be measured can be accurately and excellently measured. In order to achieve the above and other objectives, the present invention provides an exposure device for irradiating a laser beam (LB) on a photomask (R), and a pattern formed on the photomask through a projection optical system (PL). Transfer to substrate (w). The exposure device includes a laser device (16a) for generating a laser beam, and a laser optical characteristic measuring device (16c, 16e) for receiving the laser beam and measuring the optical characteristics of the laser beam, and then outputting the optical characteristics related Information; and an exposure amount control device (50) that controls the product energy of the laser beam provided on the substrate based on the foregoing information. In this specification, the optical characteristics of the laser beam are spectral characteristics, the same as 10918pif. doc / 008 10 200412616 includes tuning characteristics and wavelength characteristics, and includes all optical characteristics of laser beams. In this way, the laser optical characteristic measuring device is used to receive the laser beam generated by the laser device, measure its optical characteristics, and output information related to the optical characteristics. Then, based on the information, the exposure amount control device controls the product energy (the exposure amount of the substrate) of the laser beam provided on the substrate. Therefore, because the exposure of the substrate is adjusted based on the characteristics of the laser beam, it will not be affected even if the optical characteristics of the laser beam undergo short-term, temporary or long-term changes. The pattern on the cover is transferred to the substrate accurately and excellently. In this case, when the foregoing information indicates that the spectral line width of the laser beam is larger than the first setting value, the exposure amount control device can reduce the product energy. In the above case, when the foregoing information is that the second predetermined threshold of the spectral line width ratio of the laser beam is smaller than the first setting, the exposure amount control device may increase the product energy. Here, the second setting 値 may be the same spectral line width setting 与 as the first setting 値, or may be smaller than the first setting 光谱. In the former case, when the spectral line width is different from the predetermined setting 値 (the first setting 値 and the second setting 値), it is necessary to change the product energy of the laser beam provided to the substrate using the exposure amount control device. In the latter case, the exposure energy control device is used to change the product energy of the laser beam provided to the substrate only when the spectral line width is outside a predetermined range with the first setting 値 as the upper limit and the second setting 値 as the lower limit. . In each of the above cases, when the information is that the coherence length of the laser beam is shorter than that set in Table 2, the exposure amount control device can reduce the product energy. In the above case, when the information is that the coherence length ratio of the laser beam is at 10918 pif. doc / 008 11 200412616 When the fourth predetermined threshold below the second setting is long, the exposure control device can increase the product energy. Here, the fourth setting 値 may be a setting of the same homology length 値 as the Hth setting 値, or may be a coherence j length setting 値 larger than the third setting 値. In the former case, when the coherence length is different from the predetermined setting 値 (the third setting 値 and the fourth setting 値), it is necessary to use an exposure amount control device to change the product energy of the laser beam provided on the substrate. In the latter case, the exposure energy control device is used to change the product energy of the laser beam provided to the substrate only when the coherence length is outside a predetermined range with the fourth setting threshold as the upper limit and the third setting threshold as the lower limit. In each of the above cases, when the information is that the laser beam has an offset from the target wavelength of the center wavelength or the center of gravity wavelength greater than the fifth setting, the exposure amount control device can reduce the product energy. In the above case, when the foregoing information is that the deviation of the target wavelength of the laser beam from the center wavelength or the center of gravity wavelength is smaller than the sixth predetermined value below the fifth setting (the predetermined value), the exposure amount control device may increase the product energy . Here, the sixth setting 値 may be the setting of the center or center of gravity wavelength shift amount which is the same as the fifth setting 値, or it may be a setting of the center or center of gravity wavelength shift amount which is smaller than the fifth setting 値. In the former case, when the shift amount of the center or center of gravity wavelength is different from the predetermined setting 値 (the fifth setting 値 and the sixth setting 値), the product of the laser beam provided to the substrate must be changed by using an exposure amount control device energy. In the latter case, the exposure amount control device is used to change the thunder supplied to the substrate only when the shift amount of the center or center of gravity wavelength is outside a predetermined range with the fifth setting 値 as the upper limit and the sixth setting 値 as the lower limit. The product energy of the beam. 10918pif. doc / 008 12 200412616 In the above exposure device, the laser optical characteristic measuring device may use at least one of a Fary-Perot interference spectrometer and a grating spectroscope, and may include a beam monitoring mechanism (16c) for detecting Optical characteristics of the laser beam output by the laser device. In the exposure devices of the above-mentioned various cases, the laser optical characteristic measuring device can measure the optical characteristics of the laser beam at a predetermined timing, but it is not limited to this. For example, a laser optical characteristic measuring device may receive a laser beam and often measure the optical characteristic of the laser beam, and often output information about the optical characteristic to the exposure amount control device. Alternatively, the laser optical characteristic measuring device can receive the laser beam and often measure the optical characteristics of the laser beam, wherein when the variation amount of the reference 値 relative to the optical property reaches a predetermined value, information about the optical property will be output To the exposure control device. In the above-mentioned exposure device, the 'exposure amount control device can monitor the change in optical characteristics based on the information output by the laser optical characteristic measurement device, and control the product energy based on the monitoring results. In addition, the exposure amount control device can also read the information output by the laser optical characteristic measurement device at a predetermined interval to control the product energy. In the above exposure device, the exposure amount control device can control the product energy in an uneven manner within the exposure field. In the above case, the exposure amount control device can control the product energy to be unevenly distributed or to a degree based on the aberration information about the projection optical system. Secondly, the present invention further provides a component manufacturing method, which includes a lithography process. This lithography process can use the above-mentioned exposure device to carry out 10918pif. doc / 008 13 200412616. Wrong, in the lithography process, the exposure device mentioned above is used for exposure, and even if the optical characteristics of the laser light are changed, it will not be affected 'and the pattern can be accurately and excellently formed on the substrate. Therefore, the yield of the microelectronic element can be improved so that the productivity can be improved. The present invention further proposes an exposure method which irradiates a laser beam with a laser beam 'and transfers a pattern formed on a photomask to a substrate via a projection optical system. The exposure method includes: generating a laser beam; receiving the laser beam to measure the optical characteristics of the laser beam and outputting information about the optical characteristics; and controlling the product energy of the laser beam provided on the substrate according to the foregoing information To transfer the pattern. In this way, the generated laser beam is received and its optical characteristics are measured, and then information about the optical characteristics is output. Then, according to the foregoing information, the product energy (exposure amount of the substrate) of the laser beam provided on the substrate is controlled to perform pattern transfer. Therefore, because the exposure of the substrate is adjusted according to the optical characteristics of the laser beam, it will not be affected even if the optical characteristics of the laser beam change in the short, temporary, or long term, so it can be formed through the projection optical system. The pattern on the photomask is accurately and excellently transferred to the substrate. Here, the measurement of the optical characteristics of the laser beam and the output of the aforementioned information may be performed before the exposure, but may also be performed during the exposure. In the above-mentioned exposure method, when the foregoing information is at least one of the spectral line width of the laser beam and the offset of the target chirp from the center or center-of-gravity wavelength, and each is greater than a predetermined chirp, the product energy can be reduced . In addition, “Dang Zunxun is the same g-period length of the laser beam” and is more than 10918 pif. doc / 008 14 200412616 The fixed energy is short, you can reduce the product energy. The present invention further provides a measurement method for irradiating a laser beam to the optical system under test to measure the optical characteristics of the optical system under test. This measurement method includes: a first project: receiving a laser beam to measure the optical characteristics of the laser beam and outputting the optical characteristics of the laser beam; and a second project to modify the optical system under test based on the foregoing information Measurement results of optical characteristics. Thereby, the laser beam is received to measure the optical characteristics of the laser beam, and the optical characteristics of the laser beam are output. Based on the foregoing information, the measurement results of the optical characteristics of the optical system under test are corrected. Here, the information about the aforementioned optical characteristics may be the optical characteristics of the laser beam, but it is not limited to this; for example, it may be the optical system to be measured corresponding to the optical characteristic variation amount obtained through experiments or the like in advance. Information on changes in optical characteristics (aberrations, etc.), etc. In the former case, based on the information related to the optical characteristics, the variation of the measured optical system corresponding to the variation of the optical characteristics is calculated, and this calculation result is used as the correction amount of the measurement result of the optical characteristics of the measured optical system. In the latter case, the output result is used as the measurement result correction amount of the optical characteristics of the optical system under test. Whichever is the 'measurement result of the optical characteristics of the optical system to be measured according to the present invention', it is possible to correct (subtract) the optical characteristics of the optical system under test caused by the optical characteristics of the laser beam. The correct optical characteristics of the optical system under test. Therefore, even if the optical characteristics of the laser beam are changed, they are not affected, and the optical characteristics of the optical system under test can be accurately and excellently measured. 10918pif. doc / 008 15 200412616 In the above measurement method, the optical characteristics of the laser beam measured by the first project may be at least one of the laser beam's spectral characteristics, coherence characteristics, and wavelength characteristics. In addition, the present invention further provides a measuring device for irradiating the laser beam to the optical system under test, thereby measuring the optical characteristics of the optical system under test. The measuring device includes a calculation means for correcting the measurement result of the optical characteristics of the optical system under test based on the information about the optical characteristics of the laser beam. In this way, the calculation means corrects the measurement result of the optical characteristics of the optical system under test based on the foregoing information. Here, the information about the aforementioned optical characteristics may be the optical characteristics of the laser beam, but it is not limited to this; for example, it may be the optical system to be measured corresponding to the optical characteristic variation amount obtained through experiments or the like in advance. Information on changes in optical characteristics (aberrations, etc.), etc. In the former case, based on the information related to the optical characteristics, the variation of the measured optical system corresponding to the variation of optical characteristics is calculated, and this calculation result is used as the correction amount of the measurement result of the optical characteristics of the measured optical system. In the latter case, the output result is used as the measurement result correction amount of the optical characteristics of the optical system under test. Whichever is 'in accordance with the present invention' from the measurement result of the optical characteristics of the optical system under test, the optical characteristics of the optical system under test can be corrected (minus) by the optical characteristics of the laser beam. The correct optical characteristics of the optical system under test. Therefore, even if the optical characteristics of the laser beam are changed, they are not affected, and the optical characteristics of the optical system to be measured can be accurately and excellently measured. In this case, as in the above-mentioned measuring device, the optical characteristics of the laser beam 10918pif. doc / 008 16 200412616 The property may be at least one of the spectral characteristic, the coherence characteristic and the wavelength characteristic of the laser beam. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with the accompanying drawings as follows: Embodiments are described below based on FIGS. 1 to 5. One embodiment of the present invention will be described. FIG. 1 schematically illustrates a scanning exposure apparatus 10 according to an embodiment. The scanning exposure apparatus 10 is a scanning exposure apparatus of a stepping and scanning method using a laser light source as a light source for exposure. The scanning exposure device 10 includes an irradiation system 12 including a laser light source 16; a cross mark mounting table RST for holding the cross mark R irradiated by the irradiation system and serving as a mask, and used as a predetermined scanning direction. Moving mask stage; projection optical system PL projects the pattern on the cross mark R onto the wafer W as the substrate; XY stage 14 holds the wafer W and moves in the horizontal plane (in the XY plane) direction; And the control system of the above components. The aforementioned illumination system 12 includes a laser light source 16; a beam-shaping optical system 18; an energy coarse adjuster 20; an optical integrator (such as a fly-eye lens, an internal reflection type integrator, or a diffractive optical element.) 1 The figure uses a fly-eye lens, so hereafter called a fly-eye lens) 22 Illumination system aperture plate 24; beam splitter 26; first relay lens (relay lens) 28A; second relay lens 28B; fixed type Marker block (reticle blind) 30A; movable marker block 30B; 10918 pif for light path bending. doc / 008 17 200412616 lens M; and focusing lens 32 and so on. In addition, in the following description, components ′ other than the laser light source 16 constituting the irradiation optical system 12 are appropriately collectively referred to as an irradiation optical system. Next, the above-mentioned respective components of the irradiation optical system 12 will be described. As one example of the laser light source 16, a KrF excimer laser (oscillating wavelength is 248 nm) is used. In the following description, the laser light source 16 is referred to as a light source unit 16. In addition, as the laser light source 16, of course, ArF excimer laser (oscillation wavelength is 193 nm) or F2 laser (oscillation wavelength is 157 nm) may be used instead of KrF excimer laser. In addition, metal vapor lasers or YAG lasers, or pulsed light sources such as high-frequency wave generators for semiconductor lasers can also be used. As shown in FIG. 2A, the aforementioned light source unit 16 includes a laser resonator 16a and a beam splitter 16b as laser devices, which are arranged on the optical path of the laser beam LB emitted by the laser resonator 16a, and pass through The transmittance is about 97%; the half mirror 16g and the beam monitoring mechanism 16c are sequentially arranged on the reflected light path of the beam splitter 16b; the energy monitor 16h is arranged on the reflected light path of the half mirror 16g; The laser controller I6e receives the output signals of the aforementioned beam monitor 16c and energy monitor 16h, and the laser power supply unit 16d, etc., and uses the laser controller I6e to control the power supply voltage and the like. As shown in FIG. 2A, each of the above-mentioned configurations (16a to 16h) of the light source unit 16 is housed in a housing 17. The laser beam LB emitted from the laser resonator 16 a and passed through the beam splitter 16 b passes through a light transmitting portion of the housing 17 and is incident on the irradiation optical system. 10918pif. doc / 008 18 200412616 In addition, any one or both of the laser controller 16e and the laser power supply unit 16d may be disposed outside the cabinet 17. The aforementioned laser resonator 16a is composed of the following components: an excimer laser * tube (laser chamber *) 202 including a discharge electrode; and disposed behind the excimer laser tube 202 Side (in the left side of the figure in Figure 2A) a total reflection lens (rear mirror); a low-reflection lens (front lens, front miiro; r) 205 arranged on the front side of the excimer laser tube 202; A fixed Fabry-Perot etalon 203 and a variable inclination Fabry-Perot etalon etalon 204 are arranged in parallel between the excimer laser tube 202 and the rear lens 205 in this order. In this case, the rear-end lens 201 and the front-end lens 205 constitute a resonator for laser oscillation, which has the effect of slightly improving coherence. In addition, the fixed Fabry-Perot etalon (hereinafter referred to as the etalon) 203 and the etalon 204 constitute a narrow bandwidth module. In more detail, the etalons 203 and 204 are two stone central plates 'separated by a predetermined gap (air gap) and parallel opposites' and operated as a band-pass filter. The etalon 203 of the etalons 203 and 204 is used for coarse adjustment, and the etalon 204 is used for fine adjustment. The etalons 203 and 204 reduce the laser beam LB emitted by the laser resonator 16a to about 1/1000 to 1/300 of the natural oscillation spectral width, and then output the laser beam LB. In addition, by adjusting the inclination of the etalon 204, the wavelength (center wavelength) of the laser beam LB emitted by the laser resonator 6a can be shifted into a predetermined range. In addition, for example, in the laser resonator 16a of FIG. 2A, the coarse adjustment 19 109l8pif. The etalon used in doc / 008 200412616 is removed, and a reflective diffraction grating can be used as a wavelength selection element to replace the rear lens, and it can be arranged obliquely to form a laser resonator. In this case, a diffraction grating and a front lens 205 are used to form a resonator. In addition, a diffraction grating and a micro-calling etalon 204 are used to form a narrow-bandwidth module having the same functions as described above. In this case, the diffraction grating is used for coarse adjustment when setting the wavelength, and the etalon 204 is used for fine adjustment. Changing either of the etalon 204 and the diffraction grating can change the wavelength (oscillation wavelength) of the laser beam LB emitted by the laser resonator 16a within a predetermined range. In addition, the 'narrow bandwidth' module can also be configured with chirping and diffraction gratings, for example. The aforementioned energy monitor 16h receives the reflected light of the half mirror 16g disposed on the reflected light path reflected by the beam splitter 16b, and uses its photoelectric conversion signal (light quantity signal) as the output signal ES and outputs it to the laser controller 16e. . The energy monitor 16h can use a light receiving element such as a PIN type photodiode, which has a high response frequency to detect pulsed light emission in the far ultraviolet range. As shown in FIG. 2B, the aforementioned beam monitoring mechanism 16c may use a Fabry-Perot type interferometer, which includes a condenser lens 64 and a collimator lens arranged in order on the reflection light path of the half mirror I6g. 66, etalon 68, telemeter lens 70, and line sensor 72. The etalon 68 is the same as described above, and two reflecting mirrors (such as quartz plates) can be used to separate a predetermined gap (air gap gaP) d, which is 10918pif. doc / 008 20 200412616 This relative configuration. When the laser beam LB is incident on the etalon 68, the diffracted light on the partially reflecting surface (the second order wave of Hyugen ’s principle) will repeatedly reflect and penetrate through this air gap d. At this time, only the light in the direction of the incidence angle Θ that satisfies the following formula (1) will penetrate the etalon 68 and increase the intensity. Thereby, as shown in FIG. 2C, interference fringes (fringe patterns) are formed on the focal plane of the telemetry lens 70. This edge pattern is detected by a line sensor 72 disposed on the focal plane of the telemetry lens 70. 2ndcos0 = mX (1) where η is the refractive index of the air gap d, and m is the degree. From the above formula (1), if η, d, and m are constant and the wavelengths are different, the edge patterns formed on the focal plane are also different. Fig. 3 is a light intensity distribution detected by the line sensor 72 disposed on the focal plane of the telemetry lens 70 along line A-A 'of Fig. 2C. In Fig. 3, the horizontal axis is the position in the longitudinal direction of the line sensor 72 on the focal plane. In addition, only three specific interference fringes are shown in FIG. 3. In FIG. 3, the symbol ω represents a half of the peak value 値 corresponding to each light intensity. This width ω has the same meaning as the aforementioned half-width full-frame (FWHM). In the present invention, the two are in a proportional relationship. That is, the following formula (2) is satisfied. FWHM = kco (2) In Figure 3, the coordinate position on the horizontal axis corresponding to the peaks 値 of each light intensity distribution is determined based on the center wavelength. In other words, the aforementioned edge pattern is a pattern corresponding to the central wavelength and the spectral line width (FWHM) of the incident light. The photographic signal from the edge pattern of the line sensor 72 is output to 10918pif. doc / 008 21 200412616 Laser controller 16e. The aforementioned laser power supply section 16d includes a high-voltage power supply and a pulse compression circuit (switching circuit). The pulse compression circuit uses this high-voltage power supply to make the discharge electrodes (not shown) inside the excimer laser tube 202 at a predetermined discharge timing. To discharge. The laser controller 16e includes an image processing circuit (including an AD converter and a peak hold circuit, etc.) for processing the photographic signal and the output signal ES of the edge pattern by a predetermined signal processing, and a predetermined calculation algorithm. Microcomputers and more. The laser controller 16e obtains information related to the optical characteristics of the incident light (laser beam LB) input to the beam monitoring mechanism 16c by applying predetermined signal processing to the photographic signal of the edge pattern, such as the center wavelength (or the center of gravity wavelength) ) Λ and the information of spectral line width (FWHM) index ω 値 and so on. The laser controller 16e uses the center wavelength λ 'of the laser beam LB and calculates the set wavelength λ with respect to the set & set wavelength of the main control device 50 according to the following formula (3). The center wavelength offset (wavelength offset) of Δλ ° Δλ = | λ〇- λ | (3) In addition, the laser controller 16e uses ω 値 and calculates the value corresponding to the following formula (4) ' Spectral line width reference 値 (e.g., the starting spectral line width ω ()). Δλ = co〇- co (4) In addition, the laser controller 16e uses the above Δλ and the central wavelength λ 'and calculates the coherence length L' of the laser beam LB according to the following formula (5). Equation (6) to calculate the homology length 10918 pif calculated above. doc / 008 22 200412616 L The amount of change in the homology length reference 値 (such as the initial homology length LQ). L = λ2 / | Δλ | (5) AL = L〇- L (6) Secondly, in this embodiment, the light source unit 16 is further provided with an etalon 204 (or a grating and a standard) constituting the laser resonator 16a. The driving mechanism 19 (see FIG. 2A) of the light separating element such as a grating 204 or a grating and a chirp). This driving mechanism 19 is controlled by the laser controller 16e according to the aforementioned wavelength shift amount Δλ, so that the center wavelength λ is controlled within a desired range. However, the range of the wavelength shift Δλ that can be adjusted using the driving mechanism is limited, so the possibility of generating a wavelength shift amount Δλ beyond this range cannot be denied. In this embodiment, when the above-mentioned wavelength shift amount Aλ is generated, the exposure amount control described later is performed to suppress the decrease in the contrast of the pattern space image distribution caused by the wavelength shift. In addition, during normal exposure, the laser controller 16e performs feedback control on the power supply voltage of the high-voltage power supply in the laser power supply section 16d based on the output signal ES of the aforementioned energy monitor 16h and the detected energy power. The energy of each pulse of the laser beam LB output by the laser resonator 16 a can correspond to the energy target of each pulse given by the control information of the main control device 50. In addition, according to the control information of the main control device 50, the laser controller 16e controls the application timing or interval of the trigger signal to the pulse compression circuit in the laser power supply section 16d to control the last shot of the wafer W (shot The number of pulses or the repetitive frequency of pulse oscillation in the exposure of the) area. In addition, a photo of the beam splitter 16b in the housing 17 of the light source unit 16 is 10918 pif. doc / 008 23 200412616 The shutter optical system is further equipped with a shutter 16f to cover the laser beam according to the control information of the resident control device 50. Returning now to FIG. 1, the aforementioned beam-shaping optical system 18 shapes the cross-sectional shape of the laser beam LB that emits 16 pulses from the excimer laser, so that it is efficiently incident behind the optical path of the laser beam LB. The set fly-eye lens 22. For example, a cylindrical lens and a beam expander (not shown) are used. The energy sliver 20 is arranged on the optical path of the laser beam LB behind the beam shaping optical system 18. Here, a plurality of (forces such as 6) ND filters having different transmittances (about 1-light reduction rate) are arranged (in the first figure, two of the ND filters are represented by 36A and 36D) Around the rotating plate 34. By rotating the rotating plate 34 by the driving motor 38, the transmittance of the incident laser beam LB can be switched from 100% to a plurality of stages in a proportional series. The drive motor 38 is controlled by a main control device 50 described later. The aforementioned fly-eye lens is arranged on the optical path of the laser beam LB behind the coarse energy adjuster 20. In order to be able to illuminate the cross mark r with a uniform illuminance, a surface light source 'composed of a plurality of point light sources, that is, a secondary light source is formed on a focal plane on the exit side thereof. The laser beam emitted by the secondary light source is referred to as pulsed irradiation light L in the following description. The illumination system optical diaphragm 24 composed of a disc-shaped portion is arranged near the exit surface of the fly-eye lens 22, that is, on the exit-side focal plane that is approximately the same as the inside of the illumination optical system in this embodiment. The aperture 24 of the illumination system is arranged at equal angular intervals, for example, an aperture formed by a general circular opening and a small circular opening are used to reduce the coherence factor (coherence 10918 pif. doc / 008 24 200412616 factoOo's diaphragm, wheel-shaped diaphragm for wheel-shaped irradiation, and deformed diaphragm for deformed light source, with multiple openings eccentrically arranged (only two of the above are shown in Figure 1) Kind of aperture) and so on. The illumination system diaphragm 24 is driven to rotate by a driving device 40 such as a motor driven by a main control system 50 described later. Thereby, any one of the apertures is selectively set on the optical path of the pulse irradiation light IL. In addition, it is used instead of or in conjunction with the aperture 24, for example, a plurality of diffractive optical elements that are included in the optical system and arranged interchangeably; and a movable chirp (cone 稜鏡, Polyhedrons, etc.), and an optical unit of at least one of the adjustable zoom optical systems, is disposed between the light source 16 and the optical integrator 22. When the optical integrator 22 is a fly-eye lens, the illumination light intensity distribution on its incident surface is changed, and when the optical integrator 22 is a surface reflection type integrator, the angle of incidence range with respect to the incident surface is changed, etc .; With the light quantity distribution (the size and shape of the secondary light source) of the irradiated light on the pupil surface of the illumination optical system, that is, the change in the irradiation conditions, the light loss can be suppressed. The spectroscope 26 having a small reflectance and a large transmittance is arranged on the optical path of the pulsed irradiation light IL behind the diaphragm plate 24 of the irradiation system. Behind the beam splitter 26, a relay optical system consisting of a first relay lens 28A and a second relay lens 28B is further arranged through the fixed marker block 30A and the movable marker block 30B. The fixed mark stopper 30A is disposed on a plane slightly out of focus with respect to the conjugate surface of the pattern surface of the cross mark R, and forms a rectangular opening to define the irradiation area 42R on the cross mark R. In addition, the stationary label is 10918pif. doc / 008 25 200412616 Near the stopper 30A is a movable stopper 30B, which has an opening in a position and a variable degree in the direction of the scanning direction. At the start and end of the scanning exposure, the movable area 42R is further restricted by the movable mark stopper 30B to prevent unnecessary exposure. The curved mirror M is disposed on the optical path of the pulse irradiation light IL behind the second relay lens 28B constituting the relay optical system, and reflects the pulse irradiation light passing through the first relay h mirror 28B to the cross mark r. The focusing lens 32 is arranged on the optical path of the pulse irradiation light IL behind the mirror M. On the other hand, the pulse irradiation light α reflected by the beam splitter 20 passes through the condenser lens 44 'and is received by an integrated sensor 46 composed of a photoelectric conversion element. The photoelectric conversion signal of the integrated sensor 46 is supplied to a main control device 50 which outputs DS (digit / pulse) via an unillustrated peak-to-peak holding circuit and an A / D converter. The integrated sensor 46 has a sensitivity in the ultraviolet region, for example, and can use a PIN-type photodiode having a high response frequency to detect the pulsed light emission of the light source unit 16. The correlation coefficient (or correlation function) between the output DS of the integrated sensor 46 and the illuminance (intensity) of the pulse irradiation light IL on the surface of the wafer W is obtained in advance and stored in the main control device 50 Of memory 51. In addition, the correlation coefficient (or correlation function) between the output ES of the energy monitor 16h and the output DS of the integrated sensor 46 is also obtained in advance, and the memory 51 is stored. The cross mark R is placed on the aforementioned cross mark mounting table RST, and is sucked and fixed through a vacuum chuck (not shown). Cross mark 10918pif. doc / 008 26 200412616 describes that the mounting table RST can be micro-driven in a horizontal plane (χγ plane), and the cross mark mounting table driving unit 48 is used to scan in a predetermined stroke range in the scanning direction. The position of the cross mark mounting stage during scanning was measured by a laser interferometer 54R via a moving mirror 52R fixed to the cross mark mounting stage RST. The measurement volume of the laser interferometer 54R is supplied to the main control device 50. In addition, the end surface of the cross mark mounting table RST may be mirror-finished to form a reflecting surface of the laser interferometer 54R (equivalent to the reflecting surface of the moving mirror 52R). The aforementioned projection optical system PL may be, for example, a telecentric reduction optical system on both sides, and uses a refractive optical system composed of a plurality of lens elements having a common optical axis AX in the Z-axis direction. The projection magnification δ of the projection optical system PL is, for example, 1/4 or 1/5. Therefore, as described above, when the irradiation area 42R of the cross mark R is irradiated with the pulsed illumination light IL, the image formed on the cross mark R by the projection optical system PL is formed on the surface with a reduced image at the projection magnification δ. A slit-shaped exposure region (a region conjugated to the irradiation region 42R) on the wafer W coated with the photoresist. The XY stage 14 uses the wafer mounting table driving unit 56 on the XY plane, along the Y axis direction of the scanning direction and the X axis direction perpendicular thereto (the direction perpendicular to the drawing in FIG. 1). Dimensional mode is driven. The Z tilt stage 58 is mounted on the XY stage 14, and the wafer W is held on the Z tilt stage 58 by a vacuum suction or the like through a wafer holder (not shown). The Z tilt mounting table 58 has a position in the Z direction (focus position) for adjusting the wafer W and a wafer 10918 pif relative to the XY plane. doc / 008 27 200412616 The function of the tilt angle. In addition, the position of the XY stage; 14 is measured through a moving mirror 52W fixed on the z-tilt mounting table 58 with an external laser interferometer 54W, and the measurement of this laser interferometer 54W is supplied to the main control device 50. In addition, the end surface of the Z-tilt mounting table 58 may be mirror-finished to form a reflecting surface of the laser interferometer 54W (equivalent to the reflecting surface of the aforementioned moving mirror 52W). . In addition, although omitted from the drawings, as disclosed in Japanese Patent Application Laid-Open No. 7-176468, there is a photographing element such as a CCD above the cross mark R, and light of an exposure wavelength (in this embodiment, A pair of cross-marker alignment microscopes are used as an image processing method of alignment irradiation light. In this case, the pair of cross-mark alignment microscopes are arranged in a configuration (left-right symmetry) symmetrical to the YZ plane including the optical axis AX of the projection optical system PL. In addition, the pair of cross-mark alignment microscopes have a structure capable of traversing along the X axis on the XZ plane including the AX axis. Generally speaking, the pair of cross-mark alignment microscopes are set in a state where the cross-mark R is mounted on the cross-mark mounting table RST, and are set to be able to observe a pair of cross-mark alignment marks arranged outside the light-shielding band of the cross-mark R. In FIG. 1, the control system is mainly composed of a main control system 50. The main control system 50 is composed of a microcomputer (or minicomputer) including a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory), and uniformly controls such as the cross mark R and The synchronous scanning of the wafer W, the stepping of the wafer W, and the exposure timing make the exposure 10918 pif. doc / 008 28 200412616 The action can be performed reliably. Specifically, for example, during scanning exposure, the main control device 50 controls the cross mark mounting table RST through the cross mark mounting table driving section 48 and the wafer mounting table driving section 56 based on the measurement of the laser interferometers 54R and 54W, respectively. The position and speed of X and X mounting table 14 allow the wafer W to be scanned at a speed δ · νκ 'in the -Υ direction (or + Υ direction) relative to the exposure area 42' via the χγ stage 14, which can be synchronized with the cross The mark R is an event scanned at a speed 乂 & (or -Υ direction) via the cross mark mounting table RST. In addition, during the stepping, the main control device 50 controls the position of the XY stage 14 through the wafer stage driving unit 56 based on the measurement of the laser interferometer 54W. In addition, as described above, the main control device 50 uses the supply control information to the light source unit 16 to control the light emission timing, light emission power, and the like of the light source unit. In addition, the main control device 50 controls the energy coarse adjuster 20 and the illumination system diaphragm plate 24 via the motor 38 and the driving device 40, respectively, and controls the opening and closing operations of the movable marker stopper 30B in synchronization with the operation information of the mounting table system. In this embodiment, the main control device 50 has the roles of an exposure controller and a stage controller. These controllers may of course be provided separately from the main controller 50. When an exposure device is manufactured with the above configuration, a series of exposure processing operations are performed in the same steps as in general scanning / stepping except for a method of controlling the exposure amount. In the following, the operation when the predetermined number of wafers of the exposure device 10 are exposed is centered on the control operation of the exposure amount, which is a flowchart of a CPU processing algorithm in the main control device 50, which is schematically shown in FIG. 10918pif. doc / 008 29 200412616. When the operator inputs the setting information of the exposure conditions through the input / output device 62 (the exposure amount is set, that is, the dose of the multiplication energy of the laser beam that should be irradiated to each point on the wafer surface (imaging surface), or Including exposure setting 値), make necessary settings based on its setting information, and exchange preparations for cross marks, cross mark alignment using cross mark alignment microscopes, and baseline measurement of unillustrated wafer alignment systems When the predetermined program is performed, the flowchart of FIG. 4 is started. First, in step 102, a wafer exchange system is instructed to an unillustrated wafer handling system, and the light source unit 16 is instructed to emit light at a predetermined timing when the lightning is the light beam LB. As a result, when wafer exchange is performed using a wafer transfer system (when the wafer holder on the Z tilt mounting table 58 is mounted, the wafer loading operation is simply performed on the wafer holder). The test light-emitting indication of the light source unit 16 is performed, for example, when there is no wafer on the wafer holder during wafer exchange. Alternatively, if the shutter 16f is closed, it can be performed regardless of the presence or absence of a wafer on the wafer holder. Using the test light emission of the light source unit 16 described above, the laser beam LB is received by the energy monitor 16h and the beam monitoring mechanism. The output ES of the energy monitor and the photographic signal of the aforementioned edge pattern are supplied to the laser controller i6e. After that, the laser controller 16e performs the aforementioned various operations and outputs only the data of the lifting result (including the optical characteristic information of ①, Aco, L, AL, λ, Δλ, etc.). Then, in step 104, the optical characteristic information is read and stored in the internal memory. 10918pif. doc / 008 30 200412616 Next, in step 106, it is determined whether ω 値 included in the optical characteristic information is greater than a preset first setting 値% (2ω.). When this judgment is affirmative, it proceeds to step Π0, and calculates the exposure amount control standard 値 (control target of product energy Ε) Ε according to equation (7), and stores it in the primary memory area in the memory. Ε = Ε〇 · (1 + α. Δω) (7) Here, E. Is the exposure when ω 値 is equal to ω 値 as a reference. For example, the exposure amount when the photoresist image of the L / S pattern in the vicinity of the operating ratio of 1: 1 becomes the L / S pattern in the operating ratio of 1: 1 is EQ (mJ / cm2). Ω 値 at this time is. In this embodiment, E. Can be set to a fixed exposure by the operator. In addition, α is a positive coefficient, which is obtained by experiments in advance, and is stored in the memory 51. This will be described in detail below. For example, when the exposure is Dosel, the light intensity distribution of a spatial image corresponding to an L / S pattern with a predetermined line width of 1: 1 working ratio is obtained as shown in FIG. 11 . The spectral line width of the laser beam LB at this time is FWHM ^ SW in FIG. 9. And ω 値 calculated based on the edge pattern photographing signal from the beam monitoring mechanism 16c is ω〇 〇 In this case, it is taken as E. , The line width WL and the gap width WS of the photoresist image are equal. That is, the exposure amount is set so that WL = WS in FIG. 11. In other words, E0 = Dosel. Next, for example, the result of the widening of the spectral line width caused by the deterioration of the wavelength selection element in the light source unit 16 corresponds to the light intensity distribution of the spatial image of the L / S pattern as shown by the solid line in FIG. 5 The light intensity shown is 10918 pif. doc / 008 31 200412616 The distribution generally changes. At this time, it can be understood from FIG. 5 that for the light intensity distribution of the illuminance Eth where the photoresist is completely dissolved, the line width is “1 / < space width WS ,. At this time, for Dosel, the line width WL, = the interval width WS, and the illuminance Eth2 when it holds. In the above state, while slowly changing the exposure amount, each time to find the light intensity distribution corresponding to the space image, reduce the exposure amount up to Dose2 shown by the dotted line in Figure 5, and under the illuminance Eth2, Then the line width WL and the interval width WS. Based on the above description, in the light intensity distribution of the corresponding spatial image shown by the solid line in FIG. 5, the illuminance Em of WL = WS and the illuminance Eth in which the photoresist is completely dissolved (approximately determined by the type of photoresistance 値The difference AEth) can be expressed as a function of the spectral characteristics. Here, Eth and Eth2 are linear functions of ω0 and ω, and can be expressed as Eth = q.co. , Eth2 = q.co. In the following formula (8), q is a positive female. = ς · (ω-ω〇) q.Aco (δ) In addition, in this case, between Dosel, Dose2, and ΔΕα, the following formula (9) is satisfied. In Equation (9), p is a positive coefficient.

Dose 1 -Dose2 = -p * AEth (9) The above p and q coefficients can be obtained from experiments.

Dosel is EQ, and Dose2 is the exposure for the best resolution. Therefore, after replacing Dose2 with the exposure amount control target 値 E, Equation (9) can be expressed as Equation (9) below. E-E〇 = -p.AEth iQ ,, 10918pif.doc / 008 32 200412616 From the formula (8) and the formula (9) ', the relationship of the following number (10) can be obtained. E-E〇 = -p * AEth = ρ · ς · Δω (10) Here, from the experimental results, when P_q is related to EG, ρ · ς = α · Ε (). By changing the equation (10), the aforementioned equation (7) can be obtained. Therefore, it is not necessary to control the exposure amount (the product energy of the laser beam irradiated on the wafer surface) based on the exposure amount target 値 (the control target of the product energy) E calculated by the equation (7). Affected by the change in spectral line width, a desired line width pattern can be accurately and excellently transferred and formed on a wafer. In addition, when P, q and Ε. When irrelevant, the following formula (11) can be obtained by changing the formula (10). Here,% is a positive coefficient. Ε = Ε0 + α2 · Δω (11) However, in general, because E-Ε. It is not limited to be proportional to Δω. Therefore, experimentally, a function Δ ^ (Δω) of Δω shown in the following formula (12) may be used. Ε = Ε〇 + ^ (Δω) (12) Return to the explanation of the flowchart in FIG. 4. After the processing of step 110 is completed, step 122 is performed. On the other hand, when the determination in step 106 is negative, step 108 is performed to determine whether ω 値 included in the optical characteristic information is smaller than a preset second setting (ω2 ^ ωι). When the determination is affirmative, step 110 is performed, and after performing the same processing as described above, the process proceeds to step 122. Here, when the spectral line width is smaller than predetermined, the color difference of the projection optical system PL 10918pif.doc / 008 33 200412616 becomes smaller. However, because it is underexposed, it needs to be corrected. In this embodiment, a new exposure amount control target 値 can also be calculated in this case. In other words, in this embodiment, when ω 値 is in the range of 0 ^ 0 ^ (20 ^), the exposure amount is controlled to the target 値 ratio E according to Δω (= ω-ω.). small. When ω 値 is in the range of ω < ω2 (^ ω〇), according to Δω (= ω-ω〇), make the exposure amount control target 大 larger than EG. Especially when 0 ^ = 0) 2 = 00 0, if ω > ω〇, then E < E0, and if ω < ω. , Then E > EQ. Contrary to the above, when the determination in step 108 is negative, ω 値 is the allowable range of co ^ coSc ^. Since it is not necessary to change the exposure amount control target 依据 according to the change of the spectral line width, step 112 is performed. In particular, when ω 丨 = ω2 (= ω0), the judgment at step 108 is a case where the negative system is ω = ω 丨 = ω2 = ω0. Since Δω = 0, the change of the exposure amount control target 値 is obviously unnecessary. In step 112, it is determined whether the homology length L contained in the optical characteristic information is greater than a preset third setting 値 h (2%). When it is judged to be yes, it proceeds to step 116, and calculates the exposure control standard 値 E according to the following formula (13), and stores it in the primary memory area in the memory. Then, it progresses to step 122. In addition, LQ is the initial chirp length of the laser light LB. L = L0. (1-P.AL) (13) The formula (Π) is determined in the same manner as the above formula (7). Therefore, the positive coefficient β is obtained experimentally. Furthermore, in this case, E-E () is proportional to AL, but its proportionality constant is related to E. related. 10918pif.doc / 008 34 200412616 In this case, 'suppose E-E. It is proportional to AL and its proportionality constant has nothing to do with E0. In step Π6, the following formula (4) may be used instead of the formula (13). Among them, β2 is a positive coefficient. Ε = Ε〇-β2 * Δί (μ) When Ε-Εο is not in a proportional relationship, it is also possible to experimentally find the function of AL (fJAL) shown in the following formula (5). E = E〇 + f2 (AL) (15) On the other hand, when the judgment of the above step Π2 is negative, then step 114 is performed to determine whether the homology job L 値 included in the optical characteristic information is less than a preset fourth setting値 L2 GL () ^ Ll). When the determination is affirmative, step 116 is performed, and after the same processing as described above is performed, the process proceeds to step 122. Here, when the coherence length L is smaller than the predetermined length, it will become overexposed, so it needs to be corrected to calculate a new exposure control target. In other words, §I’m asked in the current example. When the perimeter L is in the range of LsLJ ^ Lo), the exposure ratio is controlled to the target aspect ratio E based on AL (= LQ-L). Big. When the coherence length L is in the range of L < L2 (< L0 < L1), the exposure amount is controlled to the target ratio E in accordance with AL. small. Especially when LfLfL, if L > L0, then E < E0, and when L < LG, E > E0. Contrary to the above, when the determination at step 114 is negative, the coherence length L is the valley g-day range. Since it is not necessary to change the exposure amount control target 依据 according to the change of the coherence length, step Π8 is performed. In particular, at that time, the judgment in step 114 is negative when L = Li = L2 == L0. Because AL == 〇, the change of exposure control target 値 is obviously 10918pif.doc / 008 35 200412616. In step 118, it is determined whether the wavelength offset Δλ (absolute 値) included in the optical characteristic information is greater than a preset fifth setting 値 Δλ, (^ Δλ ^ Ο). When this judgment is affirmative, it proceeds to step 120, and calculates the exposure amount control standard 値 according to the following formula (16), and stores it in the primary memory area in the memory. Then, it progresses to step 122. In addition, Δλ. This is the starting point of the target wavelength offset (wavelength offset) from the center wavelength of the laser light LB. Ε = Ε〇 · (1-γ · Δλ) (16) Equation (16) is determined in the same manner as in Equation (7). Therefore, a positive coefficient γ is obtained experimentally. Furthermore, in this case, E-E0 is proportional to Δλ, but its proportionality constant is related. In this case, suppose that E-E ^ is proportional to S and its proportionality constant is related to E. Regardless, at step 120, the following formula (17) may be used instead of the above formula (16). Among them, γ2 is a positive coefficient. Ε = Ε0, γ2 · Δί (17) When Ε-Ε. When the relationship is never proportional to, the function of Δλ shown in the following formula (18) can also be determined experimentally: * 3 (Δλ). Ε = Ε〇-ί3 (Δλ) (18) In step 122, the exposure amount control target Ε is updated using the Ε stored in the sequential memory area in the memory, and then the process proceeds to step 124. On the other hand, when the judgment of the above step Π8 is negative, because the exposure amount control target is not needed for the update type, it proceeds directly to step 124. This is because the judgment at step 118 is a negative system, 10918pif.doc / 008 36 200412616 L4LSL, and the three conditions of "people" are satisfied at the same time. In addition, because Δλ < starting 値 λ ^^ Ο) is not considered In this case, only the upper limit λλ is set for the wavelength shift Δλ. In step 124, wafer alignment in the EGA (enhanced global alignment) method disclosed in, for example, Japanese Unexamined Patent Publication No. 61-44429 is performed. The quasi-result and exposure control targets 値, in the following order, step and scan the multiple shooting areas on the wafer to sequentially transfer the pattern of the cross mark R. First, based on the wafer alignment results, monitor The laser interferometer 54W measures 値, and moves the XY stage 14 to the scan start position (acceleration start position) as the exposure of the first imaging area of the wafer W via the wafer mounting table driving unit 56. Then, it starts at the cross Scanning in the Y-axis direction of the mark R (cross mark mounting table RST) and the wafer (XY stage 14). After the two mounting tables rST, 14 reach the target scanning speeds, respectively, they are irradiated with pulse light il The pattern area of the word mark R. Next, the pattern difference areas on the cross mark R are sequentially irradiated with ultraviolet pulse light. After the entire pattern area is irradiated, the first scanning scan exposure on the wafer W is ended. Thereby, the circuit pattern of the cross mark R is reduced and transferred to the first shooting through the projection optical system PL. During the above-mentioned scanning exposure, each of the light source unit 16 is adjusted to illuminate the imaging surface (the surface of the wafer W) from the light source unit 16. Adjust (control) at least one of the energy of a pulse, the pulse repetition frequency, the width in the scanning direction of the irradiation area (that is, the slit width), and the scanning speed of the two mounting tables RST and 14, 37 10918pif.doc / 008 200412616 Make the exposure dose (product energy, exposure amount) on the imaging surface consistent with the exposure amount control target. Then, the second shot is also scanned and exposed in the same manner as described above. As described above, the wafer w is repeatedly performed. The stepwise action of the scanning exposure of the shooting area and the exposure of the next shooting area, the circuit pattern on the cross mark R will be sequentially transferred to all the places on the wafer W. There is an exposure target shooting area. As described above, after the exposure of the wafer W in the stepping and scanning methods is ended, it proceeds to step 126 and determines whether the exposure of the predetermined number of wafers W has been completed. When this is judged as If not, return to step 102, and repeat the processing from step 102 to step 106. After that, when the exposure of the predetermined number of wafers W is completed, the judgment of step 126 is affirmative, and a series of processing of this flow ends. It can be understood from the description so far that in this embodiment, the beam monitoring mechanism 16c and the laser controller 16e inside the light source unit 16 constitute a laser optical characteristic measurement device. The exposure amount control device is constituted by a main control device 50. As described above, according to the exposure device 10 of this embodiment, the laser beam monitoring mechanism 16c constituting the laser optical characteristic measuring device receives the laser beam LB, and the laser controller 16e constituting the laser optical characteristic measuring device measures the laser. The optical characteristics of the radiation beam LB are output with information about the optical characteristics (including the aforementioned optical characteristic information of ω, Δω, L, AL, Aλ, etc.). In the flow of the exposure processing, the main control device 50 executes the processing along the flow of Fig. 4. At this time, based on the aforementioned information about the optical characteristics, control is performed so that the laser beam product energy (the exposure amount of crystal 38 10918pif.doc / 008 200412616 circle w) given to the wafer W can obtain the best resolution performance. Therefore, even if there are short-term, temporary, or long-term variations, the optical characteristics of the laser light are not affected. Therefore, the pattern of the cross mark R can be accurately and excellently transferred to the wafer W through the projection optical system. In addition, in the above embodiment, when any one of the spectral half width chirp of the laser beam LB, the coherence length, and the offset (wavelength shift) from the target chirp of the center wavelength (or the center of gravity wavelength) is outside the allowable range or with It is expected that in different situations, by optimizing the exposure of wafer W, it will not be affected by any of the factors of the spectral half width of the laser beam LB, the coherence length, and the wavelength offset. Frequently exposures are performed with the best resolution. However, the laser optical characteristic measuring device constituting the exposure device of the present invention can also measure only one or both of the spectral half-width chirp, the coherence length, and the wavelength deviation from the laser beam LB, and the exposure amount control system (in In the above embodiment, the main control device 50) controls the exposure amount based on the measured optical characteristics of the laser light. Compared with the conventional exposure device, even in this case, a high-precision exposure is possible. Further, in the above embodiment, the case where the beam monitoring mechanism 16c inside the light source unit 16 and the laser controller i6e constitute a laser optical characteristic measurement device, and the case where the main control device 50 constitutes an exposure amount control device will be described. However, these methods are not intended to limit the implementation of the present invention. In other words, for example, the output of the beam monitoring mechanism 16c may be directly supplied to the main control device 50. In this case, the laser optical characteristic measuring device is constituted only by the beam monitoring mechanism. In this case, the main control device 50 10918pif.doc / 008 39 200412616 may also have various calculation functions related to optical characteristics similar to the laser controller 16e of the above embodiment. At this time, the laser controller 16e may remain inside the light source unit 16, or it may be removed. In the latter case, the output of the energy monitor 16h can be supplied to the main control device 50 and the main control device can be used to control the laser power supply unit 16d and the drive unit 19. In addition, in the above-mentioned embodiment, with respect to the target wavelength of the center wavelength (or the center-of-gravity wavelength) of the laser beam LB, the start of the wavelength shift Δλ is 0. And only the upper limit 値 (the fifth setting 値) Δ, is set for the wavelength shift Δλ. Only when Δλ is larger than Δλ1, the main control device 50 reduces the exposure amount (the product energy of the laser beam supplied to the substrate). However, for example, when the chromatic aberration of the projection optical system PL is very small, it is also possible to set a lower limit 値 (sixth setting 値) Δλ to Δλ〇 for the wavelength offset Δλ. In this case, when the center of the Δλ ^ Δλ ^^ range 値 λακκλβλΟ / is adjusted to the exposure amount EO that can obtain the best resolution, only in the Δλ deviation range, in order to prevent the wavelength shift caused by Underexposure or overexposure can also be controlled. For example, when the shift amount Δλ (absolute 中心) of the center wavelength or the center of gravity wavelength λ is larger than Ali, in order to prevent overexposure (and the contrast of the light intensity distribution of the spatial image is reduced), the exposure amount is reduced; To prevent underexposure, increase the exposure. In this case, Δλι = Δλβ (= Δλ〇) may be used. In this case, 'if Δλ changes from Δλο, it is necessary to change the product energy of the laser light supplied to the substrate. In addition, in the above-mentioned embodiment ', the case where the beam monitoring mechanism constituting the laser light optical characteristic measuring mechanism 10918pif.doc / 008 40 200412616 is formed using a Fai * y-Perot interference spectrometer will be described. However, the present invention is not limited to this, and a beam splitter or the like may be used to constitute the beam monitoring mechanism. In addition, in the above embodiments, the laser optical characteristic measuring devices (16c, 16e) can measure the optical characteristics of the laser beam LB in a predetermined measurement timing, but it is not limited to this. For example, a laser optical characteristic measuring device can receive a laser beam LB and constantly measure its optical characteristics. In the latter case, the laser optical characteristic measurement device can often output information about optical characteristics, and can only change the optical characteristics when the amount of variation between the optical characteristics of the laser beam LB and the reference frame reaches a predetermined value. The information is output to the exposure amount control device (corresponding to the main control system 50 in the above embodiment). In addition, in the above-mentioned embodiment, in order to control the product energy of the laser beam provided on the wafer, the main control device 50 reads the laser light at a predetermined interval, specifically, every time the wafer is exchanged. The optical characteristic information output by the characteristic measurement devices (16c, 16e) is not limited thereto. It is also possible to read the optical characteristic information after a predetermined number of wafers, for example, after the exposure of each loaded wafer is finished. In addition, the exposure amount control device such as the main control device 50 can often read the information output by the laser optical characteristic measurement device, monitor the change of the optical characteristic, and perform the aforementioned control of the product energy based on the result. In this case, the purpose of real-time control can be achieved, which often obtains the exposure amount with the best resolution capability according to the change in the optical characteristics of the laser beam during exposure. In addition, in the exposure apparatus of the above-mentioned embodiment, the variation of the spectral line width is 10918 pif.doc / 008 41 200412616 as the exposure correction function of the number, and the change stem of the homology length is used as the number. The exposure correction function ^ (Δί), and the exposure correction function Γ3 (Δλ) with the offset of the center wavelength or the center of gravity wavelength as a parameter, etc., can be formed for each photoresist type or pattern, or for each irradiation. Conditions are set in advance. In the above-mentioned embodiment, the adjustment (change) of the exposure amount is an adjustment that uniformly increases or decreases the exposure amount within the exposure field (the exposure area described above in the exposure field). That is, in the image shown in FIG. 14A, when the exposure amount is increased to a certain exposure amount A, the exposure amount is uniformly increased by α in the field (in the exposure area) (in FIG. 14A, the exposure amount A4 Exposure A + α); Conversely, when the exposure is reduced, the exposure is uniformly reduced by α in the field (exposure area) (in FIG. 14A, the exposure A and the exposure A-α). Although the method described above is also described, the exposure amount adjustment method of the present invention is not limited to FIG. 14A, and the exposure amount is uniformly increased or decreased in the field. For example, in the above-mentioned embodiment, the exposure amount may be corrected so that the exposure amount distribution in the exposure field on the wafer W is provided. This is a method of adjusting the exposure amount as the effect of the aberration (mainly chromatic aberration) of the projection optical system of the exposure device becomes closer to the periphery of the exposure field (exposure area). As shown in FIG. 14B, in the above embodiment, when it is necessary to increase the exposure amount, the exposure amount is increased according to the distance from the center of the shooting area (refer to the unevenness overcorrection in FIG. 14B), Conversely, when it is necessary to reduce the exposure amount, the exposure amount is reduced according to the distance from the center of the shooting area (refer to the unevenness correction in the MB chart). 10918pif.doc / 008 42 200412616 When adjusting the uneven exposure amount in the above field (in the exposure area), install a new optical lens in the illumination system 12, or you can set up a mechanism that uses the relay lens 28A Or the optical characteristics (optical blur) of the relay lens 28B can be adjusted from the center of the cross mark R to the periphery, and the amount of light on the cross mark & can be adjusted. In addition, the above-mentioned optical filter may be a filter whose transmittance can be changed according to the position in the exposure field. For example, the closer to the center of the exposure field, the higher the transmittance, and the closer to the periphery of the field, the lower the filter (the unevenness is insufficient for correction). Or conversely, the more the perimeter in the field, the more quotient the transmissivity ’is, and the closer it is to the center of the exposure field, the lower the transmissivity filter (for uneven overcorrection). In addition, when performing the above-mentioned unevenness correction, the unevenness of the exposure amount can be determined based on the aberration information of the projection optical system of the memory stored in the exposure device (or the measured aberration information of the projection optical system). Control (uneven distribution or degree, etc.). For example, based on aberrations, filters are selected from a plurality of filters having various non-uniform transmittance characteristics. The above-mentioned embodiment describes the case where the laser optical characteristic information (spectral characteristic, coherent characteristic, wavelength characteristic, etc.) is used for the exposure amount control. However, the optical characteristics of this laser light can be effectively used in addition to the above cases. For example, when measuring various optical characteristics (including aberration information such as spherical aberration, coma aberration and astigmatism, or focusing information, etc.) of the optical system to be detected (such as a projection optical system), Information on the optical properties of using laser light. In this use case, for the measurement results of 10918pif.doc / 008 43 200412616 for detecting the optical characteristics of the optical system, it may be considered to add correction based on the optical characteristic information of the laser light. In this case, considering (decreasing) the influence of changes in the optical characteristics of the laser light, a more accurate optical characteristic information of the optical system to be detected can be obtained (calculated). : This correction is based on the simulation or experiment to find the optical characteristics of the laser light and the relationship between the optical characteristics of the detection optical system (relationship or comparison table). And based on the relationship obtained, from the measurement results of the optical characteristics of the optical system under test, the influencing factors of the optical characteristics of the laser light are reduced (substantially excluded), and the optical characteristics information of the pure optical system under test is obtained. If this method is explained in more detail, for example, when the optical characteristics of the measurement object used as the projection optical system is focus information, the method of pre-simulation or experiment is used to obtain the 'on time' through the optical system with almost no aberration. Changes in focus information when the optical characteristics of laser light are slowly changed. In fact, when measuring the focus information of the projection optical system, when the laser optical characteristics change, the focus measurement results at this time, based on the relationship obtained above, subtract the correction chirp (equivalent (corresponding) to the laser optical characteristic changes) The amount of focus change). As described above, when measuring various optical characteristics of the optical system to be detected, if the measurement (monitoring) of the optical characteristics of the laser light (spectral characteristics, etc.) is taken into account, the optical characteristics of the optical system to be detected can be measured more accurately. In the exposure device, based on the above-mentioned measured optical characteristics of the projection optical system, to drive, for example, part of the optical elements constituting the projection optical system 10918pif.doc / 008 44 200412616 pieces' control the air pressure between the optical elements, or The optical characteristics of the projection optical system are adjusted by shifting the wavelength of the laser light itself. Since the projection exposure is performed through the adjusted projection optical system, a highly accurate pattern can be formed. In addition, in this embodiment, a case where the stepping and scanning type exposure apparatus is applied is described, but it is not limited to this. The present invention can also be applied to an exposure device in a step and repeat method (ie, a stepper) or an exposure device in a step and stitch method. . When the present invention is applied to a stepper or the like, the method of adjusting the number of laser pulses irradiated on one point of the wafer from the energy of each pulse output from the laser device can be adjusted, and the irradiation pulses can be adjusted. Any one of a method of setting a fixed chirp, changing the energy chirp of each pulse, or a combination control method, etc., is used to control the exposure amount to the wafer. The application of the exposure device is not limited to an exposure device for semiconductor manufacturing. For example, it can be widely applied to an exposure device for liquid crystals that transfers a pattern of a liquid crystal display element to a square glass substrate, or an exposure device for manufacturing thin-film magnetic heads, micromachines, and DNA wafers. In addition to microelectronic components such as semiconductor devices, the present invention is also applicable to the manufacture of cross marks or photomasks used in, for example, light exposure devices, EUV exposure devices, X-ray exposure devices, and electron beam exposure devices. The circuit pattern is transferred to an exposure device such as a glass substrate or a silicon wafer. In addition, in the above embodiment, the laser light may use a single wavelength laser from the ultraviolet region or the visible light region oscillating from a DFB half-body laser or an optical fiber laser, or may be used with bait (or bait and indium) Fiber amplification 10918pif.doc / 008 45 200412616 amplifier, and the use of non-linear optical crystals to convert to high-frequency waves such as ultraviolet wavelengths. For example, when the oscillating wavelength is in the range of 1.03 to 1.12 μm, a seven-fold high-frequency wave having a wavelength in the range of 147 to 160 nm is output. Especially when the oscillating wavelength is in the range of 1.09 to 1.106 μm, a seven-fold high-frequency wave having a wavelength in the range of 157 to 158 nm is generated, that is, ultraviolet light having the same wavelength as that of the F2 laser can be obtained. In addition, a single-wavelength lasing laser uses a bait-doped fiber laser. In addition, the laser light source may use, for example, a Kr2 laser (krypton dimmer laser) with a wavelength of 146 nm, an Ar2 laser (argon dimmer laser) with a wavelength of 126 nm, or the like, which generates vacuum ultraviolet rays Light source. • In addition, the magnification of the projection optical system is not limited to the reduction system, and any of the equal magnification and the magnification system may be used. «Element Manufacturing Method» Next, an example of a component manufacturing method using the exposure apparatus 10 and the exposure method described above will be described. FIG. 6 is a flowchart showing a manufacturing example of a device (such as a semiconductor wafer such as 1C or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, and a micromachine). As shown in FIG. 6, first in step 301 (design step), the function and performance of the device are designed (for example, the circuit design of a semiconductor device), and a pattern is designed to realize the function. Next, in step 302 (photomask making step), a photomask having a designed circuit pattern is formed. In another aspect of 10918pif.doc / 008 46 200412616, in step 303 (wafer manufacturing step), a material such as silicon is used to produce a crystal. Next, in step 304 (wafer processing step), the photomask and wafer prepared in steps 30 to 303 are used. As described later, the lithography technique is used to form actual circuits on the wafer. ◦Next, in step 305 (component assembly step), the wafer processed in step 304 is used to assemble the components. In step 305, as required, a die cutting process, a wire drawing process, a packaging process (sealing the wafer), and the like may be included. Finally, in step 306 (inspection step), an inspection of the operation confirmation test, the durability test, and the like of the element prepared in step 305 are performed. After this process, the components are completed and shipped. Fig. 7 shows a detailed flow example of the above step 304 in the case of a semiconductor device. As shown in Fig. 7, in step 311 (oxidation step), the surface of the wafer is oxidized. In step 312 (CVD step), an insulating layer is formed on the surface of the wafer. In step 313 (electrode formation step), an electrode is formed on the wafer by a vapor deposition method. In step 314 (ion implantation step), ions are driven into the wafer. The above steps 311 to 3 I4 respectively constitute a pre-processing process in each stage of the wafer processing. Each stage is selected to be executed as required. In each stage of wafer processing, after the above-mentioned pre-processing process is completed, the following post-processing process is performed. In the post-processing process, first, in step 315 (photoresist formation step), a photosensitive agent is coated on the wafer. Next, in step 316 (exposure step), the circuit pattern of the photomask is transferred to the wafer by using the exposure apparatus and exposure method of each of the above embodiments. Next, in step 3Π (development step), the exposed wafer is developed. In step 318 (etching step 10918pif.doc / 008 47 200412616 step), the exposed parts other than the photoresist remaining part are removed by etching. In step 319 (photoresist removal step), after the etching is completed, the unnecessary photoresist is removed. By repeatedly performing the above-mentioned pre-processing process and post-processing process, a circuit pattern is repeatedly formed on the wafer. As described above, according to the element manufacturing method of the present invention, in the exposure step, since the exposure device and the exposure method of the above embodiment are used, even the optical characteristics (spectral line width, coherence characteristics, center or center of gravity) of the laser light lb The spectral characteristics of the wavelength, etc.) will not be affected, and because the exposure is performed with an exposure amount that can obtain the best resolution performance, the pattern can be accurately and excellently formed in each shooting area on the wafer. Thereby, the yield of the microelectronic element can be improved, and thus the productivity can be improved. As described above, according to the exposure apparatus and exposure method of the present invention, the following effects can be achieved: even if the optical characteristics of the laser light are changed, it will not be affected 'and the pattern on the photomask can be accurately and excellently transferred to On the substrate. In addition, according to the device manufacturing method of the present invention, the effect of improving the productivity of a microelectronic device can be achieved. In addition, according to the measuring method and measuring device of the present invention, the following effects can be achieved: even if the optical characteristics of the laser light are changed, the optical characteristics of the detected optical system can be accurately and excellently measured. . In summary, although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art will not depart from the spirit and scope of the invention at 10918pif.doc / 008 48 200412616. Various modifications and retouching can be made, so the protection scope of the present invention shall be determined by the scope of the attached patent application. The diagram briefly illustrates the schematic diagram of the exposure device shown in FIG. 1 according to the embodiment of the present invention. FIG. 2A shows an example of a block diagram of the internal structure of the light source unit in FIG. 1 and FIG. Figure 2C shows an example of the structure of a beam monitoring mechanism. Figure 2C shows the interference fringes formed on the focal plane of the telemetry lens in Figure 2B. Figure 3 shows the light intensity of the omitted part relative to the interference fringes in Figure 2C. Distribution curve diagram; Figure 4 shows a schematic flow chart of the processing calculation of the CPU in the main control device when the wafer of a predetermined number of wafers is exposed; Figure 5 shows the explanation of the exposure control principle of Figure 1 Graphs; FIG. 6 is a schematic flow chart of a component manufacturing method according to an embodiment of the present invention; FIG. 7 is a schematic flow chart of processing in step 304 in FIG. 6; FIG. 8 is an extremely narrow bandwidth laser Fig. 9 is a graph example of the spectral distribution of laser light; Fig. 9 is a graph example showing the change in the spectral characteristic (FWHM) of laser light; Fig. 10 is a schematic example of a photoresist image formed on a wafer; Drawing when formed ίο When the photoresist image in the figure, the light intensity distribution curve of the spatial image with respect to the imaging surface with the appropriate illuminance Dosel; 10918pif.doc / 008 49 200412616 FIG. 12 is a graph showing the photoresistance characteristics; FIG. 13 The situation shown in Fig. 11 shows that the spectral line width of the laser light becomes thicker. At the same illuminance Dosel, the light intensity distribution curve of the spatial image with respect to the imaging plane; and Fig. 14A shows the exposure area (exposure field). Range), the image when the uniform exposure amount correction (product energy correction) is performed, and FIG. 14B shows the image with the uneven exposure amount correction. Description of drawings: 10 exposure device 12 illumination system 14 XY stage 16 laser light source 18 beam shaping optical system 20 energy coarse adjuster 22 optical integrator 24 illumination system aperture plate 26 beam splitter 28A / 28B relay lens 30A / 30B fixed Type mark stopper 32 focus lens 34 rotating plate 36AND filter 36DND filter 38 drive motor 40 drive device 42R irradiation area 42W 44 condenser lens 46 integrated sensor 48 cross mark stage driving unit 50 main control device 51 memory 52R Moving mirror 52W Moving mirror 54R Laser interferometer 54W Laser interferometer 56 Wafer stage driving unit 58Z Tilt stage 50 10918pif.doc / 008 200412616 62 I / O device 17 Chassis 16a Laser resonator 16b Beam splitter 16c Beam monitoring 16d laser power unit 16e laser controller 16f shutter 16g half mirror 16h energy monitor 19 drive mechanism 2 01 rear lens and lens 202 excimer laser tube 203 solid etalon 204 variable tilt type etalon 205 End lens 64 Condensing lens 66 Collimation lens 68 Etalon 70 Telemetry lens 72 Line sensor Cross mark R RST Cross mark mount W wafer PL projection optical system LB laser beam IL pulsed light ES / DS output signal 10918pif.doc / 008 51

Claims (1)

200412616 Patent application scope 1. An exposure device for irradiating a laser beam on a photomask, and transferring a pattern formed on the photomask to a substrate via a projection optical system, the The exposure device includes: a laser device for generating the laser beam; a laser optical characteristic measuring device for receiving the laser beam, and measuring an optical characteristic of the laser beam, and outputting a laser beam related to the optical characteristic Information; and an exposure control device that controls the product energy of one of the laser beams provided to the substrate based on the information. 2. The exposure device according to item 1 of the scope of patent application, wherein when the information is that the spectral line width of the laser beam is greater than a first set value, the exposure amount control device reduces the product energy. 3. The exposure device as described in item 2 of the scope of the patent application, wherein when the information is that the spectral line width ratio of the laser beam is a second predetermined time below the first setting 値 is still small, the exposure control device Increase the product energy. 4. The exposure device according to item 1 of the scope of patent application, wherein when the information is that the coherence length of the laser beam is shorter than a third setting, the exposure amount control device reduces the product energy. 5. The exposure device as described in item 4 of the scope of patent application, wherein when the information is that the coherent length of the laser beam is longer than a fourth predetermined 値 below the third setting 値, the exposure control device Increase the product energy. 6. The exposure device as described in item 1 of the scope of patent application, wherein when the information of 10918pif.doc / 008 52 200412616 is the laser beam relative to the center wavelength or the center of gravity wavelength, the number of offsets is greater than When a fifth setting is set, the exposure control device reduces the product energy. ~ 7. The exposure device according to item 6 of the scope of the patent application, wherein when the laser beam is an offset ratio of the laser beam with respect to the center wavelength or the center wavelength of the target wavelength, The sixth predetermined threshold is still small, and the exposure amount control device increases the product energy. 8. The exposure device according to item 1 of the scope of patent application, wherein the laser optical characteristic measuring device is at least one of a Fary-Perot interference spectrometer and a grating spectrometer, and includes a beam monitoring mechanism for Detect the optical characteristics of the laser beam output from the laser device. 9. The exposure device according to item 1 of the scope of patent application, wherein the laser optical characteristic measuring device receives the laser beam and frequently measures the optical characteristic of the laser beam, and often will be related to the optical characteristic The information is output to the exposure control device. 10. The exposure device as described in item 1 of the patent scope, wherein the laser optical characteristic measuring device receives the laser beam and frequently measures the optical characteristic of the laser beam, wherein when compared with the optical characteristic When the amount of variation of a reference frame reaches a predetermined frame, information about the optical characteristics is output to the exposure amount control device. 11 · The exposure device according to item 9 of the scope of patent application, wherein the exposure amount control device monitors changes in the optical characteristics based on the information output from the laser optical characteristic measurement device, and performs the monitoring based on the monitoring results. Control of product energy. 10918pif.doc / 008 53 200412616 12. The exposure device according to item 9 of the scope of patent application, the light quantity control device reads the information output by the laser optical characteristic test if exposure at a predetermined interval to control the product energy. -Austrian device 13. The exposure device as described in item 丨 of the scope of the patent application, wherein the amount control device is exposed in an uneven manner in an exposure field. The product energy can be produced by the force. 14. The exposure device as described in item 13 of the scope of the patent application, meaning that the light quantity control device is based on the image of the projection optical system. The product energy is unevenly distributed or degree. = 15 · —A kind of component manufacturing method ’includes a lithography process, which uses the exposure device in any one of the scope of claims 1 to 14 of the patent application for exposure. k 16 · —An exposure method in which a laser beam is irradiated on a mask, and a pattern formed on the mask is transferred to a substrate via a projection optical system. The exposure method includes: generating the A laser beam; receiving the laser beam to measure an optical characteristic of the laser beam and outputting information about the optical characteristic; and controlling a product of the laser beam provided to the substrate based on the information Energy to transfer the pattern. 17. The exposure method according to item 16 of the scope of patent application, wherein the information is at least one of a spectral line width of the laser beam and an offset from a target chirp of a center or center of gravity wavelength, and When each is larger than a predetermined threshold, the product energy is reduced. 10918pif.doc / 008 54 200412616 18. The exposure method described in item 16 of the scope of patent application, wherein when the information is the coherent length of the laser beam and is shorter than a predetermined chirp, the product energy is reduced. 19. A measurement method for irradiating a laser beam on an optical system under test to measure an optical characteristic of the optical system under test, the measurement method comprising: a first process for receiving the laser beam To measure an optical characteristic of the laser beam and output the optical characteristic of the laser beam; and a second project to correct the measurement result of the optical characteristic of the optical system under test based on the information. 20. The measuring method according to item 19 of the scope of patent application, wherein the optical characteristic of the laser beam measured by the first project is at least one of a spectral characteristic, a coherence characteristic, and a wavelength characteristic of the laser beam . 21. A measuring device for irradiating a laser beam to a measured optical system to measure an optical characteristic of the measured optical system, the measuring device includes: a calculation method based on The optical characteristic information is used to modify the measurement result of the optical characteristic of the optical system under test. 22. The measuring device according to item 21 of the scope of the patent application, wherein the optical characteristic of the laser beam is at least one of a spectral characteristic, a coherence characteristic, and a wavelength characteristic of the laser beam. 10918pif.doc / 008 55