200828456 九、發明說明： 【發明所屬之技術領域】 本發明係關於使用於晶片接合機、打線機之加熱塊的 構造及在加熱塊之電路基板吸附方法。 【先前技術】 將半導體晶片裝設於印有電子電路之電路基板的晶片 接&機、或以導線連接裝設在電路基板上之半導體晶片虚 電路基板的打線機，係在將搬送來之導線架真空吸附固定 於《載台之上面的狀態下’進行接合步驟或封膠步驟。 另一方面’由於近年來對薄型化之要求、高功能性之要求 及南效率製造之要求，而使電路基板更加薄板化、大型化， 且晶片之多層裝設亦即所謂堆疊逐漸被廣泛使用。在此種 薄電路基板之狀況下’容易在電路基板產生彎曲或勉曲， 無法以吸附載台吸附電路基板予以真空固定，而有不能進 行半導體晶片之裝設、封膠或打線之情形。 將衣叹有半‘體晶片之彎曲電路基板確實吸附固定於 及附載台的方法，有-種如目6所示之裝置，其係使藉由 上下方向汽缸70上下移動之安裝於支撐構件68的伸縮型 真空夾具62貫通吸附载台1〇〇之貫通孔64，以使該真空 夾具62上下移動。與專利文獻i所記載之習知技術同樣 地，有一種方法（例如，參照專利文獻υ，係截至電路基 板12搬送來為止，收納真空夾具62於吸附載台1〇〇之下 部，當電路基板12搬送至吸附載台1〇〇後，以上下方向 α缸70使真空夾具62上升至接觸到彎曲之電路基板12 200828456 為止。開啟閥66將真空夾具62内部抽成真空，利用與大 氣壓之壓差壓縮真空夹具62之伸縮管將電路基板12吸引 至基板吸附面15，同時開啟閥78，以開設在呈真空之基 板吸附面I5的複數個真空吸引孔76真空吸引固定電路基 板12。 又，如圖7所示，已有提案一種電路基板1〇1之吸附 載台140(例如’參照專利文獻2)’其係具備吸附電路基板 之吸附載台14〇與使吸附載台14〇上下移動的上下移動手 段141，於形成於吸附载台14〇之開口部143，將由彈性 材料構成之吸附墊144設為其上面較吸附載台上面向上方 突出，並設有真空吸引吸附墊144之真空吸引手段147。 上述吸附載台140於吸附搬送來之電路基板1〇1時，係使 汽缸141之連桿142突出，來使吸附載台14〇上升至吸附 墊144上面抵接於電路基板101下面為止。此時，#_ 真空吸引手段I47以真空吸附電路基板1〇1，吸附墊i44 即會因本身之彈性一邊變形成扁平，一邊將電路基板 抵接於吸附載自14G上面，並矮正電路基板1()1之麵曲以 吸附電路基板1〇1。接著，進行對電路基板ι〇ι之接合塗 布或晶片裝載。 [專利文獻1] ··曰本特開2001-203 222號公報 [專利文獻2]:日本特開平11-17397號公報 【發明内容】 當藉由晶片接合機裴設半導體晶片於電路基板時，為 了固定接著劑必須對電路基板加熱；以往該加熱步驟係與 6 200828456 接合步驟分開，上述專利文獻1，2所記載之習知技術即係 對應於此種分別進行接合步驟與加熱步驟之半導體製造裝 置。然而，由於近年來提高對半導體裝置之製造效率的要 求，因此要求同時進行接合與加熱。但是，專利文獻丨，2 所示之1知技術之電路基板的吸附機構無法同時進行接合 與加熱，有無法對應於以高效率進行半導體裝置之製造的 問題。 因此’本發明係以同時進行彎曲電路基板的吸附固定 與加熱為目的。 本發明之接合裝置，具備將搬送之電路基板真空吸附 於基板吸附面上的真空吸附孔、以及對該真空吸附之電路 基板加熱的加熱塊，其特徵在於，具有：吸引機構，其包 含伸細自如之真空吸引墊，該真空吸引墊係以伸縮部之吸 引口自該加熱塊之基板吸附面突出之方式安裝於該加熱 塊，真空吸附被搬送至該加熱塊上之已彎曲之該電路基板 的中央部區域，且藉由與大氣壓之壓力差壓縮該伸縮部， 以將该電路基板真空吸引於該基板吸附面i;以及加熱塊 驅動機構，其係使該加熱塊向被搬送至該加熱塊上之已彎 曲之忒電路基板前進後退。x，本發明之接合裝置中，該 真空吸引墊之伸縮部，由耐熱性橡膠材料構成亦佳，該耐 熱性橡膠材料為鐵氟龍橡谬或石夕橡膠或氟橡膠亦佳。 本發明以真空吸附固定彎曲電路基板的方法，係以真 工吸附固定被搬送至接合裝置之加熱塊上的彎曲電路基 板。亥接σ I置具備具有伸縮部之吸引口之真空吸引墊與 7 % %200828456 真空吸引孔，其特徵在於具備：加熱塊進出步驟，使該加 熱塊向被搬送至該加熱塊上之已彎曲之該電路基板進出· 真空吸附步驟’將該真空吸引墊之伸縮部内部及該真办吸 引孔抽成真空以真空吸引該電路基板之中央部區域，且以 與大氣壓之壓力差壓縮該真空吸引墊之伸縮部，以將該電 路基板真空吸附於該加熱塊之基板吸附面上；真空固定牛 驟，以該真空吸引墊及該真空吸引孔將該電路基板真空固 定於該加熱塊之基板吸附面上；以及加熱步驟，以該加熱 塊加熱真空固定於該加熱塊之基板吸附面上的該電路基 板。又，本發明以真空吸附固定彎曲電路基板的方法中， 該真空固定步驟係以該真空吸引墊及該真空吸引孔將該電 路基板真空固定於該加熱塊之基板吸附面上之後，釋放該 真空吸引墊之真空，而以該真空吸引孔將該電路基板真空 固定保持於該加熱塊之基板吸附面上亦佳。 本發明可發揮能同時進行彎曲電路基板之吸附固定與 加熱的效果。 【實施方式】 以下，參照圖1〜5說明實施本發明之較佳實施形態。 圖1係晶片接合機之加熱塊的剖面圖，圖2係表示晶片接 合機之加熱塊的俯視圖，圖3係真空吸引墊的剖面圖，圖 4係圖1，2所不之晶片接合機的真空系統圖，圖5係表示 %曲電路基板之吸附步驟的圖。 如圖1所示’晶片接合機具備將電路基板丨2之兩側往 搬送方向導引之平行的2條搬送導引件13。，彎曲之電路基 8 200828456 ^ 板12係被搬送至搬送導引件13之間。電路基板ι2由於 在先前步驟於電路基板12之上面裝設半導體晶片14而向 上彎曲。於搬送導引件13之間，設有以上面之基板吸附 面15吸附保持被搬送的電路基板i2、並對所吸附之電路 基板1 2加熱的加熱塊1 0。於加熱塊丨〇中設有加熱装置42， 藉此對加熱塊ίο整體加熱，以加熱所吸附之電路基板12。 於加熱塊10之基板吸附面15設有孔19，於該孔中配 設有真空吸引墊16之伸縮部的真空吸附伸縮管丨8，真空 吸附伸縮管18下部之固定部17係固定於加熱塊1〇。於真 空吸引墊16之固定部17連接有真空配管2〇,真空配管2〇 連接於固定在加熱塊1 0之集流管2 1，於集流管21連接有 真空配管22。 如圖3所示，真空吸附伸縮管18，係以上端具有用來 真空吸引電路基板12之吸引口 i8a的伸縮管構造連接於下 部之固定部17。真空吸附伸縮管18，雖係以鐵氟龍橡膠、 石夕橡膠、氟橡膠、丙細酸橡膠等較薄之耐熱性橡膠形成3 〜5段伸縮管以承受加熱塊1 〇之加熱，但只要能藉由真空 與大氣壓之壓差而壓縮，以可撓性之金屬材料構成亦可。 又’亦可依照電路基板12之彎曲程度適當增減伸縮管之 段數。此外，真空吸附伸縮管18只要是能在軸方向壓縮 變形之形狀，即使非伸縮管而是例如圓錐形者亦可。該真 空吸引墊1 6亦能藉由調整螺絲微調高度，並依照電路基 板12之彎曲程度來調整真空吸附伸縮管18從基板吸附面 15突出的高度。如上所述，真空吸引墊16為下部之固定 9 ,200828456BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a heating block used in a wafer bonding machine, a wire bonding machine, and a circuit substrate adsorption method in a heating block. [Prior Art] A wire bonding machine in which a semiconductor wafer is mounted on a circuit board on which an electronic circuit is printed, or a wire bonding machine in which a semiconductor chip dummy circuit substrate mounted on a circuit board is connected by a wire is transported The lead frame is vacuum-adsorbed and fixed in the state above the stage to perform a bonding step or a sealing step. On the other hand, in recent years, the requirements for thinning, high functionality, and south efficiency manufacturing have made the circuit board thinner and larger, and the multi-layer mounting of the wafer, which is called stacking, has been widely used. . In the case of such a thin circuit board, it is easy to bend or falsify the circuit board, and it is not possible to vacuum-fix the circuit board by the adsorption stage, and it is impossible to mount, seal, or wire the semiconductor wafer. A method in which a curved circuit board having a half-body wafer is surely adsorbed and fixed to a mounting table, and a device as shown in FIG. 6 is attached to the supporting member 68 by moving the cylinder 70 up and down. The telescopic vacuum clamp 62 penetrates the through hole 64 of the adsorption stage 1 to move the vacuum clamp 62 up and down. In the same manner as the conventional technique described in the patent document i, there is a method (for example, referring to the patent document), the vacuum chuck 62 is housed below the adsorption stage 1 , until the circuit board 12 is transported, and the circuit board is used. After being transported to the adsorption stage 1 , the upper and lower directions α cylinder 70 raises the vacuum chuck 62 until it contacts the curved circuit board 12 200828456. The opening valve 66 evacuates the inside of the vacuum chuck 62 to the pressure of atmospheric pressure. The telescopic tube of the differential compression vacuum jig 62 attracts the circuit substrate 12 to the substrate adsorption surface 15, and simultaneously opens the valve 78 to vacuum-suck the fixed circuit substrate 12 by a plurality of vacuum suction holes 76 formed in the vacuum substrate adsorption surface I5. As shown in FIG. 7, an adsorption stage 140 (for example, 'refer to Patent Document 2) of the circuit board 1〇 has been proposed, which has an adsorption stage 14 that adsorbs a circuit board and moves the adsorption stage 14〇 up and down. The vertical movement means 141 is formed on the opening portion 143 of the adsorption stage 14A, and the adsorption pad 144 made of an elastic material is placed on the upper surface of the adsorption stage. A vacuum suction means 147 for vacuum suctioning the suction pad 144 is provided. When the adsorption stage 140 adsorbs the transported circuit board 1〇1, the link 142 of the cylinder 141 is protruded to raise the adsorption stage 14 to The upper surface of the adsorption pad 144 is in contact with the lower surface of the circuit board 101. At this time, the #_ vacuum suction means I47 vacuum-applied the circuit board 1〇1, and the adsorption pad i44 is flattened by its own elasticity, and the circuit board is brought into contact with the circuit board. The surface of the short positive circuit board 1 () 1 is attached to the upper surface of the 14G to adsorb the circuit board 1〇1. Next, bonding or wafer mounting on the circuit board ι is performed. [Patent Document 1] In the case of a semiconductor wafer mounted on a circuit board by a wafer bonding machine, it is necessary to fix the adhesive when the semiconductor wafer is mounted on the circuit board by the wafer bonding machine. The circuit board is heated; the heating step is conventionally separated from the bonding process of 6 200828456, and the conventional technique described in the above Patent Documents 1 and 2 corresponds to the semiconductor system in which the bonding step and the heating step are respectively performed. However, since the requirements for the manufacturing efficiency of the semiconductor device have been increased in recent years, it is required to perform bonding and heating at the same time. However, the adsorption mechanism of the circuit board of the prior art shown in Patent Document 2 cannot be simultaneously joined and heated. There is a problem that it is not possible to cope with the manufacture of a semiconductor device with high efficiency. Therefore, the present invention aims to simultaneously perform adsorption, fixation, and heating of a curved circuit substrate. The bonding device of the present invention includes vacuum-adsorbing the transferred circuit substrate. a vacuum adsorption hole on the substrate adsorption surface and a heating block for heating the vacuum-adsorbed circuit substrate, comprising: a suction mechanism including a vacuum suction pad that is freely stretchable, and the vacuum suction pad is a stretchable portion The suction port is attached to the heating block so as to protrude from the substrate adsorption surface of the heating block, and the vacuum adsorption is carried to the central portion of the bent circuit substrate on the heating block, and is compressed by a pressure difference from atmospheric pressure. a telescopic portion for vacuum-attracting the circuit substrate to the substrate adsorption surface i; Block driving mechanism, so that the line which is conveyed to the heating block to the circuit board is bent te of the heating block of the forward and backward. x. In the joining device of the present invention, the stretchable portion of the vacuum suction pad is preferably made of a heat-resistant rubber material which is preferably a Teflon rubber or a stone rubber or a fluorine rubber. In the present invention, a method of vacuum-adhering and fixing a curved circuit substrate is to mechanically adsorb and fix a curved circuit substrate that is transferred to a heating block of the bonding device. a vacuum suction pad having a suction port having a telescopic portion and a vacuum suction hole of 7%% 200828456, characterized in that the heating block is moved in and out, and the heating block is bent to be conveyed to the heating block. The circuit board is moved in and out. The vacuum suction step 'vacuates the inside of the expansion and contraction portion of the vacuum suction pad and the vacuum suction hole to vacuum suction the central portion of the circuit substrate, and compresses the vacuum suction at a pressure difference from atmospheric pressure. a flexible portion of the pad, wherein the circuit substrate is vacuum-adsorbed on the substrate adsorption surface of the heating block; the vacuum is fixed, and the vacuum suction pad and the vacuum suction hole are used to vacuum-fix the circuit substrate to the substrate of the heating block. And a heating step of heating the vacuum to the circuit substrate on the substrate adsorption surface of the heating block. Moreover, in the method of vacuum-adhering and fixing a curved circuit substrate, the vacuum fixing step is to vacuum-fix the circuit substrate on the substrate adsorption surface of the heating block with the vacuum suction pad and the vacuum suction hole, and then release the vacuum. The vacuum of the pad is attracted, and the vacuum suction hole is used to vacuum-hold the circuit substrate on the substrate adsorption surface of the heating block. The present invention can exert the effect of simultaneously performing adsorption fixation and heating of a curved circuit substrate. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to Figs. 1 is a cross-sectional view of a heating block of a wafer bonding machine, FIG. 2 is a plan view showing a heating block of the wafer bonding machine, FIG. 3 is a cross-sectional view of the vacuum suction pad, and FIG. 4 is a view of the wafer bonding machine of FIG. FIG. 5 is a view showing a vacuum system diagram, and FIG. 5 is a view showing a step of adsorbing a % curve circuit substrate. As shown in Fig. 1, the wafer bonding machine includes two parallel conveying guides 13 that guide the both sides of the circuit board 丨2 in the conveying direction. , bent circuit base 8 200828456 ^ The plate 12 is conveyed between the conveyance guides 13. The circuit board ι2 is bent upward by mounting the semiconductor wafer 14 on the upper surface of the circuit board 12 in the previous step. Between the conveyance guides 13, a heating block 10 that sucks and holds the transported circuit board i2 on the upper substrate suction surface 15 and heats the adsorbed circuit board 12 is provided. A heating device 42 is provided in the heating block, whereby the heating block is integrally heated to heat the adsorbed circuit substrate 12. A hole 19 is formed in the substrate adsorption surface 15 of the heating block 10, and a vacuum adsorption telescopic tube 8 of the expansion and contraction portion of the vacuum suction pad 16 is disposed in the hole, and the fixing portion 17 of the lower portion of the vacuum suction tube 18 is fixed to the heating. Block 1〇. A vacuum pipe 2 is connected to the fixing portion 17 of the vacuum suction pad 16, and a vacuum pipe 2 is connected to the header pipe 2 fixed to the heating block 10, and a vacuum pipe 22 is connected to the header 21. As shown in Fig. 3, the vacuum suction bellows 18 has a telescopic tube structure for suctioning the suction port i8a of the circuit board 12 at the upper end and is connected to the lower fixing portion 17. The vacuum suction tube 18 is formed of a thin heat-resistant rubber such as Teflon rubber, Shixia rubber, fluororubber or acrylic acid rubber to form a 3 to 5 length telescopic tube to withstand the heating of the heating block 1 ,, but as long as It can be compressed by a pressure difference between vacuum and atmospheric pressure, and can be made of a flexible metal material. Further, the number of the telescopic tubes can be appropriately increased or decreased in accordance with the degree of bending of the circuit board 12. Further, the vacuum suction bellows 18 may have a shape that can be compressed and deformed in the axial direction, and may be, for example, a conical shape instead of a telescopic tube. The vacuum suction pad 16 can also finely adjust the height by adjusting the screw, and adjust the height of the vacuum suction tube 18 protruding from the substrate suction surface 15 in accordance with the degree of bending of the circuit board 12. As described above, the vacuum suction pad 16 is fixed to the lower portion 9 , 200828456
的構造。Construction.
進仃上下方向之驅動與位置控制的方式構成，還能以藉由 凸輪等向上下方向驅動的方式構成。加熱塊驅動機構39〇, 係透過軸32連接於加熱塊1〇而能驅動加熱塊。 式構成，亦能以藉由一 般馬達與位置感測器 部1 7固定於加熱塊 1 8可伸縮自如的構造。 1 5向電路基板12前進後退的加熱塊驅動機構 驅動機構30能以藉ΐ 位置控制的方式構成， 圖2係加熱塊之俯視圖，彎曲電路基板丨2、半導體曰曰 片14係以兩點鏈線表示。如圖2所示，加熱塊1〇係在吸 附固定電路基板12並進行半導體晶片14之接合動作的接 合中心線34上，具備在與電路基板12之間形成空腔的X 型槽11a，於此槽na之中心，開設有真空吸引孔u。當 藉由真空吸引孔11將槽lla抽成真空時，槽Ua與電路基 板12間之空腔即呈真空，電路基板12便被真空固定於基 板吸附面15。圖2中，真空吸引墊16係在搬送中心線％ 兩側配设於自接合中心線3 4往搬送方向上流側之半導體 晶片14裝設間距的1/2處。該位置，係接近於用以真空吸 附固定並保持電路基板丨2之槽丨丨a及真空吸引孔11、且 不會產生干涉之位置，並能以由槽Ua與真空吸引孔丨丨所 形成之真空空腔順利吸引藉由真空吸引墊1 6所吸引之電 路基板12的位置。又，該位置係於電路基板12並未大量 设置配線用貝通孔的位置，且能藉由真空吸引塾16有效 10 200828456 吸引電路基板12㈣置。當然，如上述，只要是能藉由 真空吸引墊16有效吸引之位置，真空吸引墊16之位置並 不限於上述所說明之實施形態的位置。 圖4係表示本實施形態之真空配管系統。如圖4所示， 真空吸引墊16之真空吸附伸縮管18及固定部17係經由 真工配官20，22連接於電磁閥26。電磁閥％係藉由真空 配管28連接於真空裝置29。另一方面，加熱塊1〇之真空 吸引孔1 1，係透過真空官路23連接於真空配管2S，並連 接於另-電磁閥27。另一電磁閥27，係與電磁閥％同樣 地，透過真空配管28連接於真空裝置29。真空裝置29可 直接連接於真空泵，亦可為連接於真空泵之真空槽。當電 磁閥26, 27開啟時，空氣係從真空吸附伸縮管18、真空吸 引孔1 1吸入，藉此吸附電路基板丨2。在本實施形態，雖 藉由不同電磁閥26，27控制真空吸附伸縮管丨8與真空吸 引孔1 1之吸引的開閉，但藉由同一電磁閥來控制開閉亦 佳。 芩妝圖5，說明本實施形態之動作。如圖5(&)所示， 藉由搬送導引件13搬送在先前步驟已裝設有半導體晶片Μ 之弓曲電路基板12至加熱塊1〇上，半導體晶片14之中 位置到達接合中心線3 4之位置即停止。電路基板之寬 度為W，中央區域之彎曲高度為D。如圖5(勾所示，在吸 引口 18a較基板吸附面15突出高度％之狀態下，加熱塊 10之突出於基板吸附面i 5上之真空吸附伸縮管i 8上端之 吸引口 18a的位置較搬送導引件13之導引面高度低H2。 11 200828456 此處，基板吸附面15與搬送導引件13之導引面的距離A 係較％大且滿足& =八一 。如上述使吸引口 i8a之位置 位於較搬送導引件13之導引面低的位置，藉此不論藉由 搬送導引件13所搬送之電路基板12的彎曲高度為何，均 也防止真空吸附伸縮管1 8與搬送中之電路基板12的干 涉。 其次，如圖5(b)所示，開啟電磁閥26，27，開始將真 空吸附伸縮管18與真空吸引孔丨丨之空氣吸引至真空裝置 29。在敢初加熱塊1〇之位置，吸引口丨與電路基板 間之距離L為L = D + A —仏，即使以真空裝置29吸引真 空吸附伸縮管1 8與真空吸引孔丨丨之空氣，空氣仍會從吸 引口 18a與電路基板12間之間隙被吸引至吸引口 18a，而 為真工吸附伸細管1 8無法吸附電路基板丨2之距離。當一 邊吸引來自真空吸附伸縮管18及真空吸引孔丨丨之空氣， 一邊使加熱塊驅動機構3〇動作時，會使加熱塊1〇向電路 基板12之下面上升。加熱塊1〇逐漸向電路基板a上升， 安裝於加熱塊10之真空吸附伸縮管18的吸引口 18a亦接 近於電路基板12之下面。 當吸引口 18a與電路基板12下面之間隙變小，且吸入 ;及引口 1 8a之空氣流速變快時，吸引口 1 與電路基板 12下面間之空氣壓力即降低。接著，當施加於電路基板p ^面之大氣壓力與對向於吸引口 18a之電路基板12下面的 壓力差變大時，電路基板12之上面即開始受大氣壓推向 位於電路基板12下面側之加熱塊1G的基板吸附面Η。當 12 200828456 此壓力差所產生之向下推力超過彎曲電路基板i2的彎曲 彈力時，電路基板12即開始向下方吸引口 18a移動。當電 路土板12開始向吸引口 18a移動時，電路基板a與吸引 8a之距離’即減少因加熱塊丨〇之上升動作與電路基板 12向加熱塊1 〇下降所產生之各移動距離之和。藉此，吸 引口 1 8a與電路基板！2下面便開始快速接近。於是，藉由 此吸引口 18a舆電路基板12之快速接近，吸引口 與電 路基板12下面間之空氣流速急速上升，造成壓力急速下 降。藉此壓力之急速下降，將電路基板12向加熱塊1〇之 基板吸附面15下押之下押力急速上升，電路基板12便吸 附於真空吸附伸縮管18之吸引口 18a。當電路基板12吸 附於真空吸附伸縮管18時，加熱塊1〇之上升動作即停止。 如圖5(c)所示，當因加熱塊1〇之上升與真空吸附伸縮 & 18吸入空氣，而使電路基板丨2之下面吸附於真空吸附 伸縮管18之吸引口 18a時，真空吸附伸縮管18内部之壓 力進一步降低，成為真空裝置之吸引真空壓力。真空吸附 伸縮管18係因真空之内部壓力與大氣壓之壓力差而受到 來自外部之壓縮力。如圖3所示，由於真空吸附伸縮管Η 係在維持直徑方向之形狀的狀態下容易在軸方向受壓縮的 構造，因此真空吸附伸縮管18會受該外部之壓縮力在軸 方向壓縮而變形。由於真空吸附伸縮管1 8之下部係連接 於固定部17而被固定，因此吸附電路基板12之吸引口 I8a 係藉由壓縮向加熱塊1 〇之基板吸附面1 5下降。當電路基 板12下降至基板吸附面15附近，且設於電路基板12下 13 200828456 面與設於基板吸附面18之真空吸引孔11及槽丨丨a間之距 離變小時，真空吸引孔11及槽1 la周圍之壓力便降低。如 此，電路基板12因施加於其上面之大氣壓與真空吸引孔1 ^ 及槽11a周圍之壓力差而被按壓於基板吸附面15，並藉由 真空吸附伸縮管1 8及槽11 a吸附固定於基板吸附面1 5。 以此方式’藉由加熱塊1 0之上升動作與自真空吸附伸 备百管18及真空吸引孔11吸引空氣的動作，彎曲電路基板 12即吸附固定於加熱塊1 〇之基板吸附面1 5。當電路基板 12之彎曲高度D較大時，由於須使加熱塊1 〇進一步上升， 以使吸引口 1 8 a接近於電路基板12之下面，因此吸附電路 基板12時加熱塊1 〇之基板吸附面1 5的高度係在搬送導 引件13之導引面的上側。 加熱塊1 0之基板吸附面1 5從導引面算起的上升量， 可係一檢測出因吸附而使真空吸附伸縮管1 8内面呈真空 之狀態即停止加熱塊10之上升動作後、藉此所決定的量， 亦可預先硎量搬送至加熱塊1 0上之彎曲電路基板12的彎 曲高度D，並上升與該彎曲高度對應之既定量。例如，亦 可使加熱塊1 0上升至基板吸附面1 5位於導引面上側之彎 曲咼度D之1/2處。當使加熱塊1〇之基板吸附面is自導 引面上升至上側以吸附電路基板12時，電路基板12係在 被吸附固定之狀態下，從位於兩側面之搬送導引件n之 導引面往上浮起的狀態。 又’當電路基板12之脊曲高度D小於自吸引口 iga 從基板吸附面15突出的長度Η!時，由於在加熱塊1〇之基 14 200828456 板吸附面I5較搬送導引件13之導引面低的位置，吸引口 1 8a便能吸附電路基板12，因此加熱塊丨〇之基板吸附面1 5 的高度係在搬送導引件13之導引面的下側。 如此，即使加熱塊1〇之基板吸附面15的高度與搬送 導引件13之導引面的高度之間產生差異，由於接合係在 加熱塊10上進行，因此不會產生任何問題。是以，加熱 塊10之上升所產生基板吸附面15之高度，既可在較搬送 導引件13之導引面稍微向上突出之位置，亦可與搬送導 引件13之導引面大致同一面高，或在較導引面低之位置 亦無妨。 一旦電路基板12吸附固定於基板吸附面1 5，即使將 真空吸附伸縮管18中之壓力釋放至大氣壓，由於電路基 板12係藉由真空吸引孔n及槽lu吸附固定於加熱塊， 因此亦可關閉電磁閥26以釋放真空吸附伸縮管18之真 空。 當電路基板12吸附固定於加熱塊1〇後，電路基板12 便又加熱塊1 〇加熱。由於加熱塊丨〇，係與接合裝置開始 動作的同時開始加熱，因此在電路基板12吸附固定於基 板吸附面15的同時，溫度持續上升之加熱塊10的基板吸 附面15便開始對電路基板丨2加熱。由於電路基板12通 $薄的數十微米’因此能藉由加熱塊10之熱容量 於極知' 日寸間加熱至既定溫度，並立即開始進行接合步驟。 將半體晶片14裝設在位於接合中心線3 4之電路基 板 之各半導體晶片14裝設位置結束後，將真空吸附伸 15 200828456 縮管18、真空吸引孔1 1、及槽Ua之壓力釋放至大氣壓， 並將加熱塊1〇下降至最初位置。如此，電路基板12即回 到如圖5(a)所示之彎曲狀態，真空吸附伸縮管丨8之吸引口 1 8a亦呈自基板吸附面15向上方突出的狀態。電路基板j 2 由於與真空吸附伸縮管上端之吸引口丨8a具有間隙，因此 能在不與真空吸附伸縮管丨8干涉的狀態下搬送電路基板 12。接著’以未圖示之搬送機構搬送電路基板ι2，直至下 一列之半導體晶片14之中心到達接合中心線34為止。至 此結束對因晶片接合導致彎曲之電路基板12裝設半導體 晶片14的一個循環。 以此方式’本實施形態之晶片接合機中，由於係使安 I有真空吸附伸縮管1 8之加熱塊1 〇向電路基板12上升， 因此此吸引、吸附固定具有各種彎曲高度之電路基板12。 其次’由於將電路基板12吸附固定於加熱塊1〇，因此能 在吸附固定電路基板12之同時進行加熱，而能同時進行 晶片接合機之接合步驟與加熱步驟，發揮謀求提高半導體 % 裝置之效率的效果。 以上’本發明之實施形態，雖係說明吸附固定裝設半 導體晶片14而彎曲之電路基板12的情形，但亦可使用於 吸附固定既薄且大型原來為彎曲之電路基板12。又，上述 實施形態，雖係說明在晶片接合機裝設半導體晶片14之 接合步驟真空吸附電路基板12，但本發明亦可應用於在晶 片接合機之封膠步驟吸附電路基板丨2，或在打線機之打線 步驟真空吸附電路基板12。 16 200828456 【圖式簡單說明】 圖1係本發明之實施形態之晶片接合機之加熱塊的a 面圖。The drive is driven in the up and down direction and the position control is configured to be driven in a vertical direction by a cam or the like. The heating block driving mechanism 39 is connected to the heating block 1 through the transmission shaft 32 to drive the heating block. The configuration can also be configured such that the motor and the position sensor portion 17 are fixed to the heating block 18 by a general motor. The heating block driving mechanism drive mechanism 30 that moves forward and backward toward the circuit board 12 can be configured by means of position control. FIG. 2 is a plan view of the heating block, and the curved circuit board 2 and the semiconductor chip 14 are connected by a two-point chain. Line representation. As shown in FIG. 2, the heating block 1 is attached to the bonding center line 34 which adsorbs the fixed circuit board 12 and performs the bonding operation of the semiconductor wafer 14, and has an X-shaped groove 11a which forms a cavity between the circuit board 12 and the circuit board 12. The center of the groove na is provided with a vacuum suction hole u. When the groove 11a is evacuated by the vacuum suction hole 11, the cavity between the groove Ua and the circuit board 12 is evacuated, and the circuit substrate 12 is vacuum-fixed to the substrate suction surface 15. In Fig. 2, the vacuum suction pad 16 is disposed on both sides of the transport center line % at a half of the pitch of the semiconductor wafer 14 from the bonding center line 34 to the upstream side in the transport direction. The position is close to a position for vacuum-adhering and holding the groove a and the vacuum suction hole 11 of the circuit board 、2 without interference, and can be formed by the groove Ua and the vacuum suction hole. The vacuum cavity smoothly attracts the position of the circuit substrate 12 attracted by the vacuum suction pad 16. Further, this position is at a position where the circuit board 12 is not provided with a large number of through-holes for wiring, and can be effectively held by the vacuum suction 塾16 10 200828456 The circuit board 12 is attracted. Of course, as described above, the position of the vacuum suction pad 16 is not limited to the position of the above-described embodiment as long as it can be effectively attracted by the vacuum suction pad 16. Fig. 4 is a view showing a vacuum piping system of the embodiment. As shown in Fig. 4, the vacuum suction bellows 18 and the fixing portion 17 of the vacuum suction pad 16 are connected to the solenoid valve 26 via the robots 20, 22. The solenoid valve % is connected to the vacuum device 29 by a vacuum pipe 28. On the other hand, the vacuum suction hole 1 1 of the heating block 1 is connected to the vacuum piping 2S through the vacuum official passage 23, and is connected to the other solenoid valve 27. The other solenoid valve 27 is connected to the vacuum device 29 through the vacuum pipe 28 in the same manner as the solenoid valve %. The vacuum device 29 can be directly connected to the vacuum pump or a vacuum chamber connected to the vacuum pump. When the electromagnetic valves 26, 27 are opened, the air is sucked from the vacuum suction bellows 18 and the vacuum suction holes 11 to thereby adsorb the circuit board 丨2. In the present embodiment, the opening and closing of the suction of the vacuum suction tube 8 and the vacuum suction hole 1 are controlled by the different solenoid valves 26, 27. However, it is preferable to control the opening and closing by the same solenoid valve. The operation of this embodiment will be described with reference to Fig. 5 . As shown in FIG. 5 (&), the bowing circuit substrate 12 on which the semiconductor wafer 已 has been mounted in the previous step is transferred to the heating block 1 by the transfer guide 13, and the position in the semiconductor wafer 14 reaches the bonding center. The position of line 3 4 stops. The width of the circuit substrate is W, and the bending height of the central region is D. As shown in Fig. 5, in the state where the suction port 18a protrudes by a height % from the substrate suction surface 15, the position of the suction port 18a of the upper end of the vacuum suction bellows i8 of the heating block 10 protruding from the substrate adsorption surface i5 is shown. The height of the guiding surface of the conveying guide 13 is lower than H2. 11 200828456 Here, the distance A between the substrate suction surface 15 and the guiding surface of the conveying guide 13 is larger than % and satisfies & = Bayi. The position of the suction port i8a is located lower than the guide surface of the conveyance guide 13, whereby the vacuum suction tube 1 is prevented from being suctioned regardless of the bending height of the circuit board 12 conveyed by the conveyance guide 13. 8 Interference with the circuit board 12 being conveyed. Next, as shown in Fig. 5 (b), the electromagnetic valves 26, 27 are opened, and the air of the vacuum suction bellows 18 and the vacuum suction hole is started to be sucked to the vacuum device 29. At a position where the initial heating block is 1 ,, the distance L between the suction port and the circuit substrate is L = D + A - 仏, even if the vacuum device 29 is attracted to the vacuum suction tube 18 and the air of the vacuum suction hole, Air still passes between the suction port 18a and the circuit substrate 12 The gap is attracted to the suction port 18a, and the distance between the circuit board and the vacuum suction hole 18 is attracted to the vacuum suction tube 18, and the heating block drive mechanism is attracted while sucking the air from the vacuum suction tube 18 and the vacuum suction hole. When the operation is performed, the heating block 1 is raised toward the lower surface of the circuit board 12. The heating block 1 is gradually raised toward the circuit board a, and the suction port 18a of the vacuum suction tube 18 attached to the heating block 10 is also close to the circuit board. When the gap between the suction port 18a and the lower surface of the circuit board 12 becomes small and is sucked in; and the air flow rate of the port 18 8 is increased, the air pressure between the suction port 1 and the lower surface of the circuit board 12 is lowered. When the atmospheric pressure applied to the p ^ surface of the circuit board and the pressure difference under the circuit substrate 12 opposite to the suction port 18a become large, the upper surface of the circuit substrate 12 starts to be pushed by the atmospheric pressure toward the heating block located on the lower surface side of the circuit substrate 12. 1G substrate adsorption surface Η. When the downward thrust generated by this pressure difference exceeds the bending elastic force of the curved circuit substrate i2 at 12 200828456, the circuit substrate 12 starts to move toward the lower suction port 18a. When the circuit board 12 starts moving toward the suction port 18a, the distance between the circuit board a and the suction 8a is reduced by the moving distance of the heating block and the falling distance of the circuit board 12 to the heating block 1 Therefore, the suction port 18a and the circuit board! 2 start to approach quickly. Thus, by the rapid approach of the suction port 18a and the circuit substrate 12, the air flow rate between the suction port and the lower surface of the circuit substrate 12 rises rapidly. The pressure is rapidly decreased. The rapid decrease of the pressure causes the circuit board 12 to rapidly rise toward the substrate adsorption surface 15 of the heating block 1 , and the circuit substrate 12 is adsorbed to the suction port of the vacuum suction tube 18 . 18a. When the circuit board 12 is attracted to the vacuum suction bellows 18, the rising operation of the heating block 1 is stopped. As shown in FIG. 5(c), when the lower surface of the circuit board 2 is adsorbed to the suction port 18a of the vacuum suction tube 18 by the rise of the heating block 1 and the vacuum suction/expansion 18, the vacuum suction is performed. The pressure inside the telescopic tube 18 is further lowered to become the suction vacuum pressure of the vacuum device. The vacuum suction telescopic tube 18 receives a compressive force from the outside due to the pressure difference between the internal pressure of the vacuum and the atmospheric pressure. As shown in Fig. 3, since the vacuum suction bellows is easily compressed in the axial direction while maintaining the shape in the radial direction, the vacuum suction bellows 18 is compressed and deformed in the axial direction by the external compressive force. . Since the lower portion of the vacuum suction bellows 18 is fixed to the fixing portion 17, the suction port I8a of the adsorption circuit substrate 12 is lowered by the substrate suction surface 15 of the heating block 1 by compression. When the circuit board 12 is lowered to the vicinity of the substrate adsorption surface 15 and the distance between the surface of the circuit board 12 under the surface 13 200828456 and the vacuum suction hole 11 and the groove a provided on the substrate adsorption surface 18 is small, the vacuum suction hole 11 and The pressure around the groove 1 la is lowered. In this manner, the circuit board 12 is pressed against the substrate adsorption surface 15 by the atmospheric pressure applied to the upper surface of the vacuum suction hole 1 and the groove 11a, and is adsorbed and fixed by the vacuum suction tube 1 8 and the groove 11 a. The substrate adsorption surface is 15. In this manner, the bending circuit substrate 12 is adsorbed and fixed to the substrate adsorption surface of the heating block 1 by the upward movement of the heating block 10 and the action of sucking air from the vacuum suction tube 100 and the vacuum suction hole 11. . When the bending height D of the circuit substrate 12 is large, since the heating block 1 is further raised so that the suction opening 18 a is close to the lower surface of the circuit substrate 12, the substrate of the heating block 1 is adsorbed when the circuit substrate 12 is adsorbed. The height of the surface 15 is on the upper side of the guiding surface of the conveying guide 13. The amount of rise of the substrate adsorption surface 15 of the heating block 10 from the guide surface can be detected by the state in which the inner surface of the vacuum suction tube 1 is vacuumed by adsorption, that is, after the rising operation of the heating block 10 is stopped. By the amount determined by this, the bending height D of the curved circuit board 12 conveyed to the heating block 10 can be measured in advance, and the amount corresponding to the bending height can be increased. For example, the heating block 10 can also be raised to a position where the substrate suction surface 15 is located at 1/2 of the bending strength D of the guide surface side. When the substrate adsorption surface is of the heating block 1 is raised from the guiding surface to the upper side to adsorb the circuit board 12, the circuit board 12 is guided by the conveying guide n located on both sides in the state of being adsorbed and fixed. The state of the face up. Further, when the height D of the curved surface of the circuit substrate 12 is smaller than the length of the self-suction port iga from the substrate adsorption surface 15, the guide surface of the heat transfer block 1 is higher than that of the transfer guide 13 When the drawing surface is low, the suction port 18 8 can adsorb the circuit board 12, so that the height of the substrate suction surface 15 of the heating block 系 is on the lower side of the guiding surface of the conveying guide 13. Thus, even if a difference occurs between the height of the substrate suction surface 15 of the heating block 1 and the height of the guide surface of the conveyance guide 13, since the joint is performed on the heating block 10, no problem occurs. Therefore, the height of the substrate adsorption surface 15 generated by the rise of the heating block 10 may be slightly higher than the guiding surface of the conveying guide 13 or substantially the same as the guiding surface of the conveying guide 13. The face is high, or it may be at a lower position than the guide face. When the circuit board 12 is adsorbed and fixed to the substrate adsorption surface 15 , even if the pressure in the vacuum suction tube 18 is released to the atmospheric pressure, the circuit board 12 is adsorbed and fixed to the heating block by the vacuum suction hole n and the groove lu. The solenoid valve 26 is closed to release the vacuum of the vacuum suction bellows 18. After the circuit substrate 12 is adsorbed and fixed to the heating block 1 , the circuit substrate 12 is heated again by the heating block 1 . Since the heating block is started and the heating is started at the same time as the bonding device starts to operate, the substrate substrate 15 is adsorbed and fixed on the substrate adsorption surface 15, and the substrate adsorption surface 15 of the heating block 10 whose temperature continues to rise starts to be on the circuit substrate. 2 heating. Since the circuit substrate 12 is tens of micrometers thin, it can be heated to a predetermined temperature by the heat capacity of the heating block 10, and the bonding step is immediately started. After the half-body wafer 14 is mounted on the mounting position of each of the semiconductor wafers 14 on the circuit board of the bonding center line 34, the pressure of the vacuum suction extension 15 200828456 shrinkage tube 18, the vacuum suction hole 1 1 and the groove Ua is released. At atmospheric pressure, the heating block is lowered to the original position. As a result, the circuit board 12 is returned to the bent state as shown in Fig. 5 (a), and the suction port 18 8 of the vacuum suction tube 8 is also protruded upward from the substrate suction surface 15. Since the circuit board j 2 has a gap with the suction port 8a at the upper end of the vacuum suction tube, the circuit board 12 can be conveyed without interfering with the vacuum suction tube 8 . Then, the circuit board 1b is transported by a transport mechanism (not shown) until the center of the semiconductor wafer 14 in the next row reaches the bonding center line 34. This completes one cycle of mounting the semiconductor wafer 14 on the circuit substrate 12 which is bent by wafer bonding. In the wafer bonding machine of the present embodiment, the heating block 1 of the vacuum suction tube 1 is lifted toward the circuit board 12, so that the circuit board 12 having various bending heights is attracted and adsorbed. . Secondly, since the circuit board 12 is adsorbed and fixed to the heating block 1 加热, heating can be performed while the fixed circuit board 12 is being adsorbed, and the bonding step and the heating step of the wafer bonding machine can be simultaneously performed, thereby improving the efficiency of the semiconductor % device. Effect. In the above-described embodiment of the present invention, the circuit board 12 in which the semiconductor wafer 14 is mounted and bent is adsorbed and fixed, but the circuit board 12 which is thin and large and which is originally curved may be used for adsorption and fixation. Further, in the above embodiment, the vacuum adsorption circuit substrate 12 in the bonding step of mounting the semiconductor wafer 14 in the wafer bonding machine is described. However, the present invention can also be applied to the adsorption circuit substrate 丨2 in the sealing step of the wafer bonding machine, or The wire bonding step of the wire bonding machine vacuum adsorbs the circuit substrate 12. [Brief Description of the Drawings] Fig. 1 is a plan view showing a heating block of a wafer bonding machine according to an embodiment of the present invention.
圖2係表示本發明之實施形態之晶片接合機之加 的俯視圖。 、A 圖3係真空吸引墊的剖面圖。 圖4係本發明之實施形態之晶片接合機的真空系統 圖〇 圖5(a)〜（c)係表示彎曲之電路基板之吸附步驟的說明 圖6係表示使習知技術之伸縮型真空夾具上下移動 固姑班Ah 丨 吸附固定裝置的剖面圖 圖7係表示使習知技術之吸 定裝置的剖面圖。 ^上下移動之吸附固 【主要元件符號說明】 10 加熱塊 11 真空吸引孔 11 a 槽 12, 101 電路基板 13 搬送導引件 14 半導體晶片 15 基板吸附面 16 真空吸引墊 17 固定部 17 200828456 18 真空吸附伸縮管 18a 吸引口 19 20, 22, 24, 25, 28 真空配管 21 集流管 23 真空管路 26, 27 電磁閥 29 真空裝置 30 加熱塊驅動機構 32 轴 34 接合中心線 36 搬送中心線 42 加熱裝置 50 吸附筒 52 真空吸引孔 62 真空夾具 64 貫通孔 66 閥 68 支撐構件 70 上下方向汽缸 76 真空吸引孔 78 閥 100, 140 吸附載台 141 汽缸（上下移動手 18 200828456 142 143 144 147 連桿 開口部 吸附墊 真空吸引手段 19Fig. 2 is a plan view showing the addition of a wafer bonding machine according to an embodiment of the present invention. A Figure 3 is a cross-sectional view of the vacuum suction pad. Fig. 4 is a view showing a vacuum system of a wafer bonding machine according to an embodiment of the present invention. Figs. 5(a) to 5(c) are diagrams showing an adsorption step of a curved circuit board. Fig. 6 is a view showing a conventionally used telescopic vacuum chuck. Cross-sectional view of the cementing fixture of the Guruban Ah 丨 adsorption fixture Fig. 7 is a cross-sectional view showing a conventional suction device. ^Adsorption of up and down movements [Description of main components] 10 Heater block 11 Vacuum suction hole 11 a Slot 12, 101 Circuit board 13 Transfer guide 14 Semiconductor wafer 15 Substrate adsorption surface 16 Vacuum suction pad 17 Fixing part 17 200828456 18 Vacuum Adsorption bellows 18a suction port 19 20, 22, 24, 25, 28 vacuum piping 21 manifold 23 vacuum line 26, 27 solenoid valve 29 vacuum unit 30 heating block drive mechanism 32 shaft 34 joint center line 36 transfer center line 42 heating Device 50 Adsorption cylinder 52 Vacuum suction hole 62 Vacuum clamp 64 Through hole 66 Valve 68 Support member 70 Up and down direction cylinder 76 Vacuum suction hole 78 Valve 100, 140 Adsorption stage 141 Cylinder (Up and down moving hand 18 200828456 142 143 144 147 Connecting rod opening Part suction pad vacuum suction means 19