TWI774198B - 基板處理方法 - Google Patents
基板處理方法 Download PDFInfo
- Publication number
- TWI774198B TWI774198B TW110101874A TW110101874A TWI774198B TW I774198 B TWI774198 B TW I774198B TW 110101874 A TW110101874 A TW 110101874A TW 110101874 A TW110101874 A TW 110101874A TW I774198 B TWI774198 B TW I774198B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- nozzle
- liquid
- processing
- gas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 230
- 238000000034 method Methods 0.000 title description 14
- 239000007788 liquid Substances 0.000 claims abstract description 282
- 238000012545 processing Methods 0.000 claims abstract description 265
- 238000009832 plasma treatment Methods 0.000 claims abstract description 44
- 238000003672 processing method Methods 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 115
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- -1 sulfuric acid peroxide Chemical class 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-L peroxysulfate(2-) Chemical compound [O-]OS([O-])(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-L 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-032706 | 2020-02-28 | ||
JP2020032706A JP7427475B2 (ja) | 2020-02-28 | 2020-02-28 | 基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202137315A TW202137315A (zh) | 2021-10-01 |
TWI774198B true TWI774198B (zh) | 2022-08-11 |
Family
ID=77490432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110101874A TWI774198B (zh) | 2020-02-28 | 2021-01-19 | 基板處理方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7427475B2 (ja) |
TW (1) | TWI774198B (ja) |
WO (1) | WO2021171805A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7459849B2 (ja) | 2021-08-24 | 2024-04-02 | 株式会社デンソー | レーダ装置及び方位推定方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201707059A (zh) * | 2015-03-27 | 2017-02-16 | 思可林集團股份有限公司 | 基板處理裝置及基板處理方法 |
US20170297164A1 (en) * | 2016-04-15 | 2017-10-19 | Samsung Electronics Co., Ltd. | Cleaning apparatus and substrate processing system including the same |
TW201738004A (zh) * | 2016-03-25 | 2017-11-01 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100625315B1 (ko) * | 2004-08-24 | 2006-09-20 | 세메스 주식회사 | 세정액 공급 장치 및 방법 |
WO2006104043A1 (ja) | 2005-03-25 | 2006-10-05 | Mitsubishi Rayon Co., Ltd. | 表面処理方法および表面処理された物品 |
JP2008027657A (ja) | 2006-07-19 | 2008-02-07 | Tokyo Institute Of Technology | プラズマ源、処理装置及び処理方法 |
JP5181085B2 (ja) | 2006-06-22 | 2013-04-10 | リバーベル株式会社 | 処理装置及び処理方法 |
JP2009016433A (ja) | 2007-07-02 | 2009-01-22 | Noritsu Koki Co Ltd | レジスト除去装置 |
KR102461911B1 (ko) | 2018-07-13 | 2022-10-31 | 삼성전자주식회사 | 플라즈마 제네레이터, 이를 포함하는 세정수 처리 장치, 반도체 세정 장치 및 세정수 처리 방법 |
-
2020
- 2020-02-28 JP JP2020032706A patent/JP7427475B2/ja active Active
-
2021
- 2021-01-13 WO PCT/JP2021/000758 patent/WO2021171805A1/ja active Application Filing
- 2021-01-19 TW TW110101874A patent/TWI774198B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201707059A (zh) * | 2015-03-27 | 2017-02-16 | 思可林集團股份有限公司 | 基板處理裝置及基板處理方法 |
TW201738004A (zh) * | 2016-03-25 | 2017-11-01 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
US20170297164A1 (en) * | 2016-04-15 | 2017-10-19 | Samsung Electronics Co., Ltd. | Cleaning apparatus and substrate processing system including the same |
Also Published As
Publication number | Publication date |
---|---|
JP2021136369A (ja) | 2021-09-13 |
WO2021171805A1 (ja) | 2021-09-02 |
TW202137315A (zh) | 2021-10-01 |
JP7427475B2 (ja) | 2024-02-05 |
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