TWI773104B - Workpiece plate and method for slicing ingot - Google Patents
Workpiece plate and method for slicing ingot Download PDFInfo
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- TWI773104B TWI773104B TW110102968A TW110102968A TWI773104B TW I773104 B TWI773104 B TW I773104B TW 110102968 A TW110102968 A TW 110102968A TW 110102968 A TW110102968 A TW 110102968A TW I773104 B TWI773104 B TW I773104B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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Abstract
Description
本發明係關於矽晶圓製造領域,特別係關於一種晶棒工件板及晶棒切割方法。 The invention relates to the field of silicon wafer manufacturing, in particular to a crystal rod workpiece plate and a crystal rod cutting method.
晶圓是半導體晶片製造過程中最基礎也是重要的原材料之一,其製造過程通常包括將多晶矽料通過柴氏拉晶法(Czochralski,直拉單晶法,簡稱CZ法)拉製成高品質的單晶矽棒的拉晶步驟、將單晶矽棒分割成多段單晶矽棒,同時進行單晶矽棒外徑的研磨和加工凹槽(notch)的滾磨分段步驟、將單晶矽棒進行分割成矽片的切割步驟,以及通過研磨提高矽片表面平坦度的步驟等。 Wafer is one of the most basic and important raw materials in the manufacturing process of semiconductor chips. The crystal pulling step of the single crystal silicon rod, dividing the single crystal silicon rod into multi-segment single crystal silicon rods, grinding the outer diameter of the single crystal silicon rod and the rolling and segmenting step of processing the groove (notch), the single crystal silicon rod The rod is cut into silicon wafers, and the surface flatness of the wafers is improved by grinding.
目前300mm矽片的主流切割技術為線切割。線切割是通過協同導輪、鋼線、砂漿、溫度作用等來切割晶棒的方法。砂漿是線切割過程中非常重要的一種材料,砂漿的密度、黏度及均勻性等均會影響晶棒切割品質。線切割過程中,通過漿料冷卻切割位置以達到帶走切割時產生的熱量為目的。但習知技術中,由於工件板結構上的缺陷,導致砂漿在晶棒上的分佈不合理,使得晶棒切割時產生的熱量不能及時被砂漿完全帶走,會有部分熱量通過晶棒向晶 棒未切割部分轉移;而由於晶棒裸露在空氣中,未進行冷卻等降溫措施,導致晶棒未切割部分溫度最高可達70℃,故而切割部分和未切割部分產生較大的溫度偏差,這種溫度偏差會導致切割出的晶圓產生較大翹曲(warp),導致切割良率下降。 At present, the mainstream cutting technology of 300mm silicon wafer is wire cutting. Wire cutting is a method of cutting crystal rods by cooperating with guide wheels, steel wires, mortar, temperature effects, etc. Mortar is a very important material in the wire cutting process. The density, viscosity and uniformity of the mortar will affect the cutting quality of the ingot. During the wire cutting process, the cutting position is cooled by the slurry to take away the heat generated during cutting. However, in the conventional technology, due to the structural defects of the workpiece plate, the distribution of the mortar on the crystal rod is unreasonable, so that the heat generated during the cutting of the crystal rod cannot be completely taken away by the mortar in time, and some heat will pass through the crystal rod to the crystal rod. The uncut part of the rod is transferred; and because the crystal rod is exposed in the air without cooling and other cooling measures, the temperature of the uncut part of the crystal rod can reach up to 70 °C, so the cut part and the uncut part have a large temperature deviation. Such temperature deviation will cause a large warp of the diced wafer, resulting in a decrease in the dicing yield.
鑒於以上所述習知技術的缺點,本發明的目的在於提供一種晶棒工件板及晶棒切割方法,用於解決習知技術中,由於工件板結構上的缺陷,導致砂漿在晶棒上的分佈不合理,使得晶棒切割時產生的熱量不能及時被砂漿完全帶走,會有部分熱量通過晶棒向晶棒未切割部分轉移,切割部分和未切割部分產生較大的溫度偏差,這種溫度偏差會導致切割出的晶圓產生較大翹曲,導致切割良率下降等問題。 In view of the shortcomings of the above-mentioned conventional techniques, the purpose of the present invention is to provide a crystal ingot workpiece plate and a crystal ingot cutting method, which are used to solve the conventional technology, due to the structural defects of the workpiece plate, resulting in the mortar on the crystal ingot. The distribution is unreasonable, so that the heat generated when the crystal rod is cut cannot be completely taken away by the mortar in time, and part of the heat will be transferred to the uncut part of the crystal rod through the crystal rod, and there will be a large temperature deviation between the cut part and the uncut part. Temperature deviation can cause large warpage of diced wafers, resulting in problems such as decreased dicing yield.
為實現上述目的,本發明提供一種晶棒工件板,使用時,待切割的晶棒黏貼於樹脂條上,樹脂條固定於所述晶棒工件板上,晶棒工件板和樹脂條的長度方向均與晶棒的長度方向一致,所述晶棒工件板的寬度大於所述樹脂條的寬度,且小於所述晶棒的直徑,所述晶棒工件板的兩側沿所述晶棒工件板的長度方向間隔設置有多個開孔;所述晶棒工件板內部還設置有冷卻通道,所述冷卻通道沿所述晶棒工件板的長度方向延伸,所述多個開孔與所述冷卻通道相連通,所述開孔的孔徑小於所述冷卻通道的直徑;在對晶棒進行線切割的過程中,向所述冷卻通道內通入砂漿,砂漿流經所述多個開孔後順著晶棒表面流下,以在完成晶棒切割的過程中通過砂漿帶走晶棒上部的熱量。 In order to achieve the above purpose, the present invention provides a crystal rod workpiece plate. When in use, the crystal rod to be cut is pasted on a resin strip, the resin strip is fixed on the crystal rod workpiece board, and the length direction of the crystal rod workpiece board and the resin strip is are consistent with the length direction of the crystal rod, the width of the crystal rod workpiece plate is larger than the width of the resin strip, and smaller than the diameter of the crystal rod, the two sides of the crystal rod workpiece plate are along the crystal rod workpiece plate A plurality of openings are arranged at intervals in the length direction of the ingot workpiece plate; a cooling channel is also arranged inside the crystal ingot workpiece plate, and the cooling channel extends along the length direction of the crystal ingot workpiece plate, and the plurality of opening holes are connected with the cooling channel. The channels are connected, and the diameter of the openings is smaller than the diameter of the cooling channels; in the process of wire cutting the crystal rod, mortar is introduced into the cooling channels, and the mortar flows through the plurality of openings and follows the crystals. The surface of the ingot flows down to remove heat from the upper part of the ingot through the mortar as the ingot is cut.
於一實施例中,所述冷卻通道在所述晶棒工件板內蜿蜒分佈。 In one embodiment, the cooling channels are serpentinely distributed in the ingot workpiece plate.
於一實施例中,所述晶棒工件板的寬度與樹脂條的寬度的差異為1~5公分(cm)。 In one embodiment, the difference between the width of the ingot workpiece plate and the width of the resin strip is 1-5 centimeters (cm).
於一實施例中,所述晶棒工件板的寬度與晶棒直徑的比為7/15~1/2。 In one embodiment, the ratio of the width of the ingot workpiece plate to the diameter of the ingot is 7/15˜1/2.
更於一實施例中,待切割晶棒的直徑為300毫米(mm),所述晶棒工件板的寬度為140~150mm。 In another embodiment, the diameter of the ingot to be cut is 300 millimeters (mm), and the width of the ingot workpiece plate is 140-150 mm.
於一實施例中,所述開孔均勻間隔分佈,開孔之間的間距為8~20mm,所述開孔的孔徑為1.5~3mm。 In one embodiment, the openings are evenly spaced, the distance between the openings is 8-20 mm, and the diameter of the openings is 1.5-3 mm.
於一實施例中,所述晶棒工件板的前端和後端形成有凸台,所述凸台背離所述晶棒工件板與所述樹脂條相貼置的表面,其中,前端和後端是指與所述晶棒工件板的長度方向相垂直的兩端。 In one embodiment, bosses are formed on the front and rear ends of the ingot workpiece plate, and the bosses face away from the surface of the ingot workpiece plate and the resin strip, wherein the front end and the rear end are Refers to the two ends perpendicular to the length direction of the ingot workpiece plate.
本發明還提供一種晶棒切割方法,所述晶棒切割方法包括將待切割的晶棒通過樹脂條貼置於如上述任一方案中所述的晶棒工件板上,在對晶棒進行線切割的過程中向所述晶棒工件板的冷卻通道內通入砂漿,砂漿流經晶棒工件板的多個開孔後順著晶棒表面流下,以在完成晶棒切割的過程中通過砂漿帶走晶棒上部的熱量。 The present invention also provides a method for cutting a crystal rod, the method for cutting the crystal rod comprises attaching the crystal rod to be cut on the crystal rod workpiece plate as described in any of the above-mentioned solutions through a resin strip, and performing wire cutting on the crystal rod. During the cutting process, mortar is introduced into the cooling channel of the crystal ingot workpiece plate, and the mortar flows through the multiple openings of the crystal ingot workpiece plate and flows down the surface of the crystal ingot, so as to be taken away by the mortar in the process of completing the crystal ingot cutting process. Heat in the upper part of the ingot.
如上所述,本發明的晶棒工件板及晶棒切割方法,具有以下有益效果:本發明對晶棒工件板的寬度重新進行優化設計,並在晶棒工件板上設置多個開孔,開孔與冷卻通道相連通,在晶棒切割過程中向冷卻通道內通入砂漿,砂漿經開孔在晶棒工件板內流動後流到晶棒表面,在冷卻晶棒工件板的同時,砂漿完全包裹著晶棒順著晶棒流下,帶走晶棒上部的熱,起到對晶棒整體進行冷卻的作用,可以有效減少晶棒各個部位的溫差,有助於減少切割過程中產生的翹曲,有助於提高切割品質。 As mentioned above, the crystal ingot workpiece plate and the crystal ingot cutting method of the present invention have the following beneficial effects: the present invention re-optimizes the design of the width of the crystal ingot workpiece plate, and sets a plurality of openings on the crystal ingot workpiece plate. The hole is connected with the cooling channel. During the cutting process of the crystal rod, the mortar is introduced into the cooling channel. The mortar flows in the crystal rod workpiece plate through the opening and then flows to the crystal rod surface. When the crystal rod workpiece plate is cooled, the mortar is completely The wrapped crystal rod flows down the crystal rod, taking away the heat from the upper part of the crystal rod, and cooling the whole crystal rod, which can effectively reduce the temperature difference of each part of the crystal rod and help reduce the warpage generated during the cutting process. , which helps to improve the cutting quality.
11:晶棒工件板 11: Ingot workpiece plate
111:開孔 111: Opening
112:冷卻通道 112: Cooling channel
12:晶棒 12: Crystal rod
13:樹脂條 13: Resin strip
14:噴嘴 14: Nozzle
15:驅動裝置 15: Drive device
16:切割線 16: Cutting Line
17:線輥 17: Line Roller
18:砂漿缸 18: Mortar tank
19:回收裝置 19: Recycling device
圖1顯示為晶棒工件板、晶棒和樹脂條的位置關係示意圖 Figure 1 shows a schematic diagram of the positional relationship between the ingot workpiece plate, the ingot and the resin strip
圖2顯示為本發明提供的晶棒工件板的結構示意圖。 FIG. 2 is a schematic view of the structure of the ingot workpiece plate provided by the present invention.
圖3顯示為本發明提供的晶棒工件板內的冷卻通道的一例示性結構示意圖。 FIG. 3 shows an exemplary structural schematic diagram of the cooling channel in the ingot workpiece plate provided by the present invention.
圖4顯示為採用本發明的晶棒工件板進行晶棒切割的一例示圖。 FIG. 4 is a diagram showing an example of ingot cutting using the ingot workpiece plate of the present invention.
圖5顯示為採用習知技術和本發明提供的晶棒工件板分別切割出的矽片翹曲度的箱線圖。 FIG. 5 shows boxplots of the warpage of silicon wafers respectively cut by the conventional technology and the ingot workpiece plate provided by the present invention.
以下由特定的具體實施例說明本發明的實施方式,熟悉此技術的人士可由本說明書所揭露的內容輕易地瞭解本發明的其他優點及功效。 The embodiments of the present invention are described below by specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.
須知,本說明書所附圖式所繪示的結構、比例、大小等,均僅用以配合說明書所揭示的內容,以供熟悉此技術的人士瞭解與閱讀,並非用以限定本發明可實施的限定條件,故不具技術上的實質意義,任何結構的修飾、比例關係的改變或大小的調整,在不影響本發明所能產生的功效及所能達成的目的下,均應仍落在本發明所揭示的技術內容得能涵蓋的範圍內。同時,本說明書中所引用的如“上”、“下”、“左”、“右”、“中間”等的用語,亦僅為便於敘述的明瞭,而非用以限定本發明可實施的範圍,其相對關係的改變或調整,在無實質變更技術內容下,當亦視為本發明可實施的範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification, so as to be understood and read by those who are familiar with the technology, and are not used to limit the implementation of the present invention. Restricted conditions, it does not have technical substantive significance, any structural modification, proportional relationship change or size adjustment, without affecting the effect that the present invention can produce and the purpose that can be achieved, should still fall within the present invention. The disclosed technical content must be within the scope of coverage. At the same time, terms such as "up", "down", "left", "right", "middle", etc. quoted in this specification are only for the convenience of description and clarity, and are not used to limit the implementation of the present invention. The change or adjustment of the scope and the relative relationship thereof shall also be regarded as the applicable scope of the present invention without substantially changing the technical content.
目前300mm矽片的主流切割技術為線切割。線切割過程中,通過漿料冷卻切割位置以達到帶走切割時產生的熱量為目的。但習知技術中,由於工件板結構上的缺陷,導致砂漿在晶棒上的分佈不合理,使得晶棒切割時產 生的熱量不能及時被砂漿完全帶走,因而晶棒的切割位置和未切割位置產生較大溫差,進而導致切割出的晶圓產生較大翹曲。為此,本發明對此提出一種改善對策。 At present, the mainstream cutting technology of 300mm silicon wafer is wire cutting. During the wire cutting process, the cutting position is cooled by the slurry to take away the heat generated during cutting. However, in the prior art, due to the structural defects of the workpiece plate, the distribution of the mortar on the crystal rod is unreasonable, resulting in the production of The generated heat cannot be completely taken away by the mortar in time, so there is a large temperature difference between the cutting position and the uncut position of the ingot, which in turn leads to a large warpage of the cut wafer. Therefore, the present invention proposes an improvement countermeasure.
具體地,如圖1至圖3所示,本發明提供一種晶棒工件板11,使用時,待切割的晶棒12黏貼於樹脂條13上,樹脂條13固定於所述晶棒工件板11上,晶棒工件板11和樹脂條13的長度方向均與晶棒12的長度方向一致,且晶棒工件板11和樹脂條13的長度通常略大於待切割晶棒12的長度,所述晶棒工件板11的寬度大於所述樹脂條13的寬度,且小於所述晶棒12的直徑,所述晶棒工件板11的兩側沿所述晶棒工件板11的長度方向間隔設置有多個開孔111;所述晶棒工件板11內部還設置有冷卻通道112,所述冷卻通道112沿所述晶棒工件板11的長度方向延伸,所述多個開孔111與所述冷卻通道112相連通,所述開孔111的孔徑小於所述冷卻通道112的直徑以確保冷卻通道112內的砂漿不會通過單個開孔111全部流出而是會沿著冷卻通道112依次流經下一個開孔111流出;在對晶棒12進行線切割的過程中,向所述冷卻通道112內通入砂漿,砂漿流經所述多個開孔111後順著晶棒12表面流下,以在完成晶棒12切割的過程中通過砂漿帶走晶棒12上部的熱量,減少晶棒12切割部分和未切割部分的溫差。本發明對晶棒工件板11的寬度重新進行優化設計,並在晶棒工件板11上設置多個開孔111,開孔111與冷卻通道112相連通,在晶棒12切割過程中向開孔111內通入砂漿,砂漿經開孔111在晶棒工件板11內流動後流到晶棒12表面,在冷卻晶棒工件板11的同時,砂漿完全包裹著晶棒12順著晶棒12流下,帶走晶棒12上部的熱,起到對晶棒12整體進行冷卻的作用,可以有效減少晶棒12各個部位的溫差,有助於減少切割過程中產生的翹曲,有助於提高切割品質。
Specifically, as shown in FIGS. 1 to 3 , the present invention provides an
為使砂漿在晶棒工件板11內的流動儘量均勻,以及使砂漿流經的面積盡可能大,本實施例中,所述冷卻通道112在所述晶棒工件板11內蜿蜒分
佈。在進一步的示例中,如圖3所示,所述冷卻通道112沿類弓字型結構分佈,圖3中的箭頭示意砂漿流動方向,所述冷卻通道112的進口和出口位於同一側,且較佳位於與所述開孔111所在的側面相鄰的一側,即所述冷卻通道112的進口和出口與開孔111不在同一側。由於冷卻通道112的直徑大於開孔111的孔徑,冷卻通道112內的砂漿會依次流經各個開孔111並經開孔111流出,由此在晶棒工件板11內形成縱橫交錯的流道,有利於增大砂漿與晶棒工件板11的接觸面積,可以快速冷卻晶棒工件板11,並進而通過晶棒工件板11起到冷卻晶棒12上部的作用以減少晶棒12上部和下部的溫差,且砂漿隨晶棒12表面順流而下的過程中,將晶棒12上部的熱帶走,由此起到對晶棒12的冷卻作用。
In order to make the flow of the mortar in the crystal
所述晶棒工件板11的材質包括但不限於不銹鋼。所述晶棒工件板11與樹脂條13的寬度差均精心設計,太小和太大都難以將開孔111內流出的砂漿均勻引導到晶棒12表面。發明人經大量實驗發現,所述晶棒工件板11的寬度與樹脂條13的寬度的差異為1~5cm(包括端點值,本實施例中如無特殊說明,在涉及數值範圍時,均包括端點值)時尤佳,比如為1cm、2cm、3cm、4cm、5cm或這區間內的任意值。考慮安裝時需使晶棒工件板11和樹脂條13兩側均有寬度餘留,推薦2~3cm。
The material of the
所述晶棒工件板11的具體尺寸需根據待切割晶棒12的直徑而定。較優地,所述晶棒工件板11的寬度與晶棒12直徑的比為7/15~1/2。更具體地,待切割晶棒12的直徑為300mm,則所述晶棒工件板11的寬度為140~150mm。
The specific size of the
為儘量確保砂漿的均勻分佈,所述開孔111較佳均勻間隔分佈。在一示例中,所述開孔111的孔徑d1為1.5~3mm,開孔111之間的間距d2為8~20mm。
In order to ensure the uniform distribution of the mortar as much as possible, the
作為示例,所述晶棒工件板11的前端和後端形成有凸台,所述凸台背離所述晶棒工件板11與所述樹脂條13相貼置的表面,其中,前端和後端是
指與所述晶棒工件板11的長度方向相垂直的兩端。形成凸台有利於保護晶棒12,避免晶棒12受到外物碰撞。
As an example, the front and rear ends of the
採用本發明提供的晶棒工件板11進行晶棒12切割的一例示性過程如下:如圖4所示,將待切割晶棒12通過樹脂條13固定於本發明提供的晶棒工件板11上,並置於切割線16的上方,晶棒工件板11與驅動裝置15相連接,晶棒12在驅動裝置15的驅動下向下朝切割線16運動,切割線16在線輥17作用下運動,此過程中,噴嘴14向晶棒工件板11內通入砂漿,砂漿在冷卻通道112內流動並流經各個開孔111後經開孔111流到晶棒12表面並逐漸包裹晶棒12未與樹脂條13接觸的表面並流到切割線16上,最後如瀑布一樣向下流到砂漿缸18中,砂漿經回收裝置19可以實現回收利用。
An exemplary process for cutting the
當然,上述過程僅是示例性的,比如還可以將晶棒固定不動而讓切割線向上運動,本實施例中對此不做嚴格限制。重要的是採用本發明的晶棒工件板,線上切割過程中可以帶走晶棒表面的熱量,減少晶棒切割部分和未切割部分的溫差,有助於減少因切割產生的翹曲。圖5顯示為採用習知技術中的晶棒工件板進行晶棒切割所切割出的矽片的翹曲度與採用本發明提供的晶棒工件板進行晶棒切割所切割出的矽片的翹曲度的比較箱線圖。如圖5所示,採用習知技術中的晶棒工件板,矽片翹曲度高達10.99微米(μm);而採用本發明,矽片最大翹曲度下降到4.8μm,下降了一半以上。目前該晶棒工件板已在發明人所在的工廠大量投入使用,經實踐證明可以有效降低切割矽片的翹曲度,提高切割品質。 Of course, the above process is only exemplary, for example, the ingot may also be fixed and the cutting line may be moved upward, which is not strictly limited in this embodiment. What is important is that the use of the ingot workpiece plate of the present invention can take away the heat on the surface of the ingot during the online cutting process, reduce the temperature difference between the cut part and the uncut part of the ingot, and help reduce the warpage caused by cutting. FIG. 5 shows the warpage of the silicon wafer cut out by using the ingot workpiece plate in the prior art for ingot cutting and the warpage of the silicon wafer cut out by using the ingot work plate provided by the present invention for ingot cutting. Comparison boxplot of curvature. As shown in FIG. 5 , using the conventional ingot workpiece plate, the warpage of the silicon wafer is as high as 10.99 micrometers (μm); while using the present invention, the maximum warpage of the silicon wafer is reduced to 4.8 μm, which is reduced by more than half. At present, the ingot workpiece plate has been put into use in the factory where the inventor is located, and it has been proved by practice that it can effectively reduce the warpage of the cut silicon wafer and improve the cutting quality.
本發明還提供一種晶棒切割方法,所述晶棒切割方法包括將待切割的晶棒通過樹脂條貼置於如上述任一方案中所述的晶棒工件板上,在對晶棒進行線切割的過程中向所述晶棒工件板的冷卻通道內通入砂漿,砂漿流經晶棒 工件板的多個開孔後順著晶棒表面流下,以在完成晶棒切割的過程中通過砂漿帶走晶棒上部的熱量。對所述晶棒工件板的介紹還請參考前述內容,出於簡潔的目的不贅述。基於本發明的晶棒工件板進行的晶棒切割方法,可以顯著降低矽片翹曲度,提高切割品質。 The present invention also provides a method for cutting a crystal rod, the method for cutting the crystal rod comprises attaching the crystal rod to be cut on the crystal rod workpiece plate as described in any of the above-mentioned solutions through a resin strip, and performing wire cutting on the crystal rod. During the cutting process, mortar is introduced into the cooling channel of the crystal rod workpiece plate, and the mortar flows through the crystal rod The multiple openings of the workpiece plate flow down along the surface of the ingot, so as to remove the heat from the upper part of the ingot through the mortar during the cutting of the ingot. For the introduction of the ingot workpiece plate, please refer to the foregoing content, which will not be repeated for the sake of brevity. The crystal rod cutting method based on the crystal rod workpiece plate of the present invention can significantly reduce the warpage of the silicon wafer and improve the cutting quality.
綜上所述,本發明提供一種晶棒工件板及晶棒切割方法。使用本發明提供的晶棒工件板時,樹脂條固定於所述晶棒工件板上,晶棒工件板和樹脂條的長度方向均與晶棒的長度方向一致,所述晶棒工件板的寬度大於所述樹脂條的寬度,且小於所述晶棒的直徑,所述晶棒工件板的兩側沿所述晶棒工件板的長度方向間隔設置有多個開孔;所述晶棒工件板內部還設置有冷卻通道,所述冷卻通道沿所述晶棒工件板的長度方向延伸,所述多個開孔與所述冷卻通道相連通,所述開孔的孔徑小於所述冷卻通道的直徑;在對晶棒進行線切割的過程中,向所述冷卻通道內通入砂漿,砂漿流經所述多個開孔後順著晶棒表面流下,以在完成晶棒切割的過程中通過砂漿帶走晶棒上部的熱量。本發明對晶棒工件板的寬度重新進行優化設計,並在晶棒工件板上設置多個開孔,開孔與冷卻通道相連通,在晶棒切割過程中向開孔內通入砂漿,砂漿經開孔在晶棒工件板內流動後流到晶棒表面,在冷卻晶棒工件板的同時,砂漿完全包裹著晶棒順著晶棒流下,帶走晶棒上部的熱,起到對晶棒整體進行冷卻的作用,可以有效減少晶棒各個部位的溫差,有助於減少切割過程中產生的翹曲,有助於提高切割品質。所以,本發明有效克服了習知技術中的種種缺點而具高度產業利用價值。 In summary, the present invention provides a crystal ingot workpiece plate and a crystal ingot cutting method. When using the crystal rod workpiece board provided by the present invention, the resin strip is fixed on the crystal rod workpiece board, and the length directions of the crystal rod workpiece board and the resin strip are consistent with the length direction of the crystal rod, and the width of the crystal rod workpiece board is consistent with the length direction of the crystal rod workpiece board. larger than the width of the resin strip and smaller than the diameter of the crystal rod, the two sides of the crystal rod workpiece plate are provided with a plurality of openings at intervals along the length direction of the crystal rod workpiece plate; the crystal rod workpiece plate A cooling channel is also provided inside, the cooling channel extends along the length direction of the ingot workpiece plate, the plurality of openings communicate with the cooling channel, and the diameter of the openings is smaller than the diameter of the cooling channel ; In the process of wire cutting the crystal rod, the mortar is introduced into the cooling channel, and the mortar flows down the surface of the crystal rod after flowing through the plurality of openings, so as to be taken away by the mortar in the process of completing the crystal rod cutting Heat in the upper part of the ingot. The invention re-optimizes the design of the width of the crystal ingot workpiece plate, and sets a plurality of openings on the crystal ingot workpiece plate. After flowing in the crystal rod workpiece plate through the opening, it flows to the crystal rod surface. While cooling the crystal rod workpiece plate, the mortar completely wraps the crystal rod and flows down the crystal rod, taking away the heat from the upper part of the crystal rod, which acts as a countermeasure against the crystal rod. The effect of cooling the rod as a whole can effectively reduce the temperature difference of each part of the crystal rod, which helps to reduce the warpage generated during the cutting process and helps to improve the cutting quality. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.
上述實施例僅例示性說明本發明的原理及其功效,而非用於限制本發明。任何熟悉此技術的人士皆可在不違背本發明的精神及範疇下,對上述實施例進行修飾或改變。因此,舉凡所屬技術領域中具有通常知識者在未脫離 本發明所揭示的精神與技術思想下所完成的一切等效修飾或改變,仍應由本發明的請求項所涵蓋。 The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, any person with ordinary knowledge in the technical field is not departing from the All equivalent modifications or changes accomplished under the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.
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