TWI771311B - Manufacturing method of fan-out wafer level packaging - Google Patents

Abstract

The present invention provides a semiconductor packaging material which can reduce the warpage of a semiconductor wafer or a semiconductor package, especially a wafer or a package in a fan-out wafer-level package (FO-WLP). The present invention relates to a packaging material for semiconductors, characterized in that the packaging material for semiconductors containing at least a thermosetting component (A) and an active energy ray curable component (B) is to be placed in an environment not exposed to active energy rays. The calorific value α(J/g) when the package material for semiconductor after heat treatment at 150°C for 10 minutes and irradiated at 25°C with 1 J/cm ² of ultraviolet rays having a wavelength of 351 nm is 1≦α(J/g).

Description

Manufacturing method of fan-out wafer level packaging

The present invention relates to a packaging material for semiconductors, and more particularly, to a packaging material for semiconductors for fan-out type wafer level packaging in which the arrangement area of the external connection electrodes is larger than the plane size of the semiconductor.

In recent years, in the fields of semiconductor circuits and the like, miniaturization has been increasingly demanded. In order to meet this demand, semiconductor circuits are sometimes implemented in a chip size package close to the chip size. One of the means to realize chip-scale packaging is to propose a packaging method called Wafer Level Package (hereinafter referred to as WLP) by horizontal bonding of wafers and fragmentation. The WLP system has attracted attention due to its contribution to cost reduction and miniaturization. The WLP is assembled face down on the circuit substrate on which the electrodes are formed.

However, with the miniaturization and high integration of semiconductor wafers, the number of external connection electrodes (terminals, bumps) on the semiconductor wafer tends to increase, and therefore, the pitch of the external connection electrodes on the semiconductor wafer tends to decrease. Propensity. However, it is not easy to directly mount a semiconductor wafer with bumps formed at a fine pitch on a circuit board.

For the above-mentioned problems, it is proposed to contact semiconductor wafers In the surrounding area or a part of the area, a semiconductor packaging material area is formed, and a rewiring layer connected to the electrodes is also provided in the semiconductor packaging material area to increase the bump pitch. This type of WLP is called a fan-out wafer-level package (hereinafter referred to as FO-WLP in some cases) because the size of the bump placement area increases relative to the size of the semiconductor chip.

In FO-WLP, a semiconductor wafer is embedded in a semiconductor package. The circuit surface of the semiconductor chip is exposed to the outside, forming the boundary between the semiconductor chip and the semiconductor package. A rewiring layer connected to the electrodes of the semiconductor chip is also provided in the area of the semiconductor package material in which the semiconductor chip is embedded, and the bumps are electrically connected to the electrodes of the semiconductor chip through the rewiring layer. The pitch of the bumps can be set to be larger relative to the electrode pitch of the semiconductor wafer.

Moreover, it is also considered that not only a semiconductor chip but also a plurality of electronic components are accommodated in one package, and a plurality of semiconductor chips are embedded in a semiconductor package to form one semiconductor component. Such electronic components, which are encapsulated in multiple numbers, are embedded in a semiconductor packaging material. A rewiring layer to which the electrodes of the electronic components are connected is provided in a semiconductor package material for embedding a plurality of electronic components, and the bumps pass through the rewiring layer to electrically connect the electrodes of the electronic components. Even in this case, since the size of the bump placement region becomes larger relative to the size of the semiconductor wafer, it can be called FO-WLP.

Generally speaking, this kind of package is provided with a certain interval on a support, arranges a semiconductor chip or electronic component, embeds it with a semiconductor packaging material, heats and hardens the packaging material, and peels it from the support to produce a pseudo wafer. Next, a rewiring layer is formed from the circuit surface of the semiconductor chip that resembles the wafer to the expanded semiconductor packaging material region. As described above, the pitch of the bumps can be set by increasing the pitch of the electrodes of the semiconductor wafer.

As mentioned above, WLP or FO-WLP has a structure in which layers made of different materials are laminated, so in the package forming step, the semiconductor wafer or the semiconductor wafer may warp, which affects the productivity or quality, and take various countermeasures. For example, Patent Document 1 discloses a semiconductor package made of a liquid encapsulating resin composition that suppresses warpage of a pseudo-wafer that reduces productivity in WLP, and Patent Document 2 discloses a package for electronic parts that can suppress the amount of warpage. Resin flakes. In addition, Patent Documents 3 to 5 disclose that even for a wafer with a large diameter and a thin film, the wafer is molded at one time (wafer molding), and after molding, there is a feature of suppressing warpage of the wafer. Good wafer protection performance, suitable for WLP resin composition. In addition, in order to suppress the warpage of the wafer, the thickness of the support and the content of the inorganic filler are adjusted (Patent Document 6), and an attempt has been made to use a packaging material having a laminate structure of multiple layers (Patent Documents 7 and 8). In addition, it is proposed to adjust the hardness of the encapsulating resin to suppress warpage (Patent Document 9), focusing on the storage elastic modulus of the encapsulating resin, and using the difference in thermal expansion coefficient between the semiconductor chip and the encapsulating material that can alleviate the cause of warpage. Resin encapsulation material for generated thermal stress (Patent Document 10). [Prior Art Document] [Patent Document] [0011] [Patent Document 1] Japanese Patent Laid-Open No. 2012-209453 [Patent Document 2] Japanese Patent Laid-Open No. 2014-36097 [Patent Document 3] Japanese Patent Laid-Open No. 2013-95915 Publication [Patent Document 4] Japanese Patent Application Laid-Open No. 2015-50447 [Patent Document 5] Japanese Patent Application Laid-Open No. 2015-50399 [Patent Document 6] Japanese Patent Application Laid-Open No. 2015-90926 [Patent Document 7] Japanese Patent Application Laid-Open No. 2015-2015- Japanese Patent Application Laid-Open No. 53341 [Patent Document 8] Japanese Patent Application Laid-Open No. 2014-197670 [Patent Document 9] Japanese Patent Application Laid-Open No. 2015-53469 [Patent Document 10] Japanese Patent Application Laid-Open No. 2015-86359

[0012] However, in the formation step of the pseudo-wafer of FO-WLP, the circuit surface of the chip is exposed outside the semiconductor package for the subsequent wiring formation step. Therefore, due to the difference in thermal expansion coefficient between the semiconductor chip and the encapsulating resin connected to the inner side of the circuit surface of the chip, there is a tendency that convex warpage is formed on the circuit surface side of the chip. The warping of the protrusions may cause damage to the wafer or the formation of a rewiring layer in the subsequent transfer step, which may lead to defocusing of patterning. In addition, in the step of forming the rewiring layer on the circuit surface side of the semiconductor wafer, due to the formation of the polymer film corresponding to the insulating layer and the heat treatment after the development, the stress of shrinkage is generated for the pseudo wafer, contrary to the above, On the other hand, there is a tendency for concave warpage to be formed on the circuit surface side of the wafer. Such concave warpage may cause damage to the pseudo-wafer or defocusing of the molding resin (Marking) in the subsequent transfer steps, or decrease in the mounting yield after processing into a semiconductor chip. doubt. In this way, WLP or FO-WLP is not only the cause of warpage caused by the material of the packaging material, but also in each processing step such as each packaging step or rewiring layer forming step, due to shrinkage stress acting on the packaging. Therefore, not only the amount of warpage, but also the direction of warpage must be considered. Therefore, the methods of warpage suppression or warpage correction proposed in the above-mentioned prior patent documents have their limitations. [0015] Therefore, an object of the present invention is to provide a semiconductor packaging material that can reduce the warpage of a semiconductor wafer or a semiconductor package, especially a wafer or package in a fan-out wafer-level packaging (FO-WLP).

In view of the above-mentioned problems, the present inventors have found that in a package material for semiconductors containing a thermosetting component and an active energy ray curable component, the order or curing of each component is adjusted by the amount of heat or active energy ray. However, since the stress acts in opposition to the shrinkage stress acting on the package in each processing step, even if the direction or amount of warpage is different in each processing step, a semiconductor package without warpage can be realized. In addition, by controlling the amount of heat generated during photocuring or the amount of heat generated during thermal curing of the resin composition constituting the encapsulating material, the shrinkage stress acting on the encapsulation is appropriately generated in each processing step, and warpage can be corrected. . More specifically, it was found that for a package material for semiconductors containing a thermosetting component and an active energy ray-curable component, heat treatment at 150° C. for 10 minutes causes a certain degree of thermosetting reaction, but the formation is not complete. In the thermally cured state, a pseudo-wafer such as FO-WLP is prepared to be formed, and then at 25°C, the active energy ray curing reaction proceeds easily when irradiated with 1J/cm ² of ultraviolet rays containing a wavelength of 351 nm, and the active energy ray curing component is accelerated. In the hardening shrinkage, the stress caused by the hardening shrinkage acts, and the warpage stress existing in the preformed pseudo-wafer is eliminated, and the warpage can be corrected. The present invention has been completed based on this finding. [1] The packaging material for semiconductors according to the first embodiment of the present invention is characterized in that the packaging material for semiconductors containing at least a thermosetting component (A) and an active energy ray curable component (B), will be The calorific value α (J/g) of the package material for semiconductors after being exposed to active energy rays and heat-treated at 150°C for 10 minutes and irradiated at 25°C with 1 J/cm ² of ultraviolet rays with a wavelength of 351 nm is: 1≦α(J/g). [2] The packaging material for semiconductors according to the second embodiment of the present invention is the packaging material for semiconductors according to [1], in which the packaging material for semiconductors is subjected to differential scanning in an environment that is not exposed to active energy rays. Calorimeter (DSC) at 10°C/min from 25°C to 230°C, the calorific value β(J/g) during temperature rise is 1≦β(J/g). [3] The packaging material for semiconductors according to the third embodiment of the present invention, which is the packaging material for semiconductors according to [1] or [2], is characterized in that in an environment that is not exposed to active energy rays, After heat treatment at 150°C for 10 minutes, the package material for semiconductors was heated from 25°C to 230°C at a rate of 10°C/min with a differential scanning calorimeter (DSC) in an environment not exposed to active energy rays. The calorific value γ(J/g) is 1≦γ(J/g). [4] The packaging material for semiconductors according to the fourth embodiment of the present invention, which is the packaging material for semiconductors according to any one of [1] to [3], which is liquid, granular, ingot or sheet any form of shape. [5] The packaging material for semiconductors according to the fifth embodiment of the present invention is the packaging material for semiconductors according to any one of [1] to [4], which is a sheet-like semiconductor in which two or more layers are laminated. With packaging materials, the material composition of each layer is different from each other. [6] The packaging material for semiconductors according to the sixth embodiment of the present invention is the packaging material for semiconductors according to any one of [1] to [5], which is in contact with the outer periphery or a part of the area of the semiconductor wafer. use. [7] The packaging material for semiconductors according to the seventh embodiment of the present invention is the packaging material for semiconductors according to any one of [1] to [5], which is used for fan-out type wafer level packaging . [8] A method for manufacturing a fan-out wafer level package according to an eighth embodiment of the present invention is a method for manufacturing a fan-out wafer level package, which includes the following steps of preparing a package for semiconductors Material step: The semiconductor packaging material contains at least a thermosetting component (A) and an active energy ray hardening component (B), and will be subjected to heat treatment at 150° C. for 10 in an environment that is not exposed to active energy rays. After 10 minutes, the packaging material for semiconductors was irradiated at 25°C with a calorific value α(J/g) of 1≦α(J/g) containing ultraviolet rays with a wavelength of 351 nm at 1 J/cm ² . When the package material is heated, the thermosetting component (A) in the semiconductor package material will undergo a certain degree of thermal hardening reaction, but it will not be completely thermally hardened, and a pseudo-crystal of a fan-out wafer level package will be formed. The step of rounding, and irradiating the semiconductor packaging material similar to the wafer with active energy rays, promotes the hardening shrinkage of the active energy ray curable component (B) in the semiconductor packaging material, and generates stress by the hardening shrinkage, eliminating the The warpage stress existing in the aforementioned pseudo-wafer, and the step of correcting the warpage.

[0067] 上述式中，X表示氫原子、碳數1~17之烷基、碳數1~8之烷氧基、苯基、苯基(被碳數1~17之烷基、碳數1~8之烷氧基、胺基、具有碳數1~8之烷基之烷基胺基或二烷基胺基取代)、萘基(被碳數1~17之烷基、碳數1~8之烷氧基、胺基、具有碳數1~8之烷基之烷基胺基或二烷基胺基取代)，Y、Z各自表示氫原子、碳數1~17之烷基、碳數1~8之烷氧基、鹵基、苯基、苯基(被碳數1~17之烷基、碳數1~8之烷氧基、胺基、具有碳數1~8之烷基之烷基胺基或二烷基胺基取代)、萘基(被碳數1~17之烷基、碳數1~8之烷氧基、胺基、具有碳數1~8之烷基之烷基胺基或二烷基胺基取代)、蒽基(Anthryl)、吡啶基、苯並呋喃基、苯並噻吩基，Ar表示碳數1~10之伸烷基、亞乙烯基、伸苯基、亞聯苯基、亞吡啶基(pyridylene)、伸萘基、噻吩、伸蒽基(Anthrylene)、亞噻吩基( Thienylene)、亞呋喃基(Furylene)、2,5-吡咯-二基、4,4’-茋-二基、4,2’-苯乙烯-二基，n為0或1之整數。 　　[0068] 上述通式表示具有咔唑結構的肟酯化合物，特佳為式中，X、Y各自為甲基或乙基，Z為甲基或苯基，n為0，Ar為伸苯基、伸萘基、噻吩或亞噻吩基的肟酯化合物。 　　[0069] 肟酯系光聚合起始劑之調配量係相對於分子中含有乙烯性不飽和基之聚醚化合物100質量份，較佳為0.01~5質量份。 　　[0070] α-胺基苯乙酮系光聚合起始劑，具體而言，可列舉2-甲基-1-[4-(甲基硫基)苯基]-2-嗎啉基丙酮-1、2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁烷-1-酮、2-(二甲基胺基)-2-[(4-甲基苯基)甲基]-1-[4-(4-嗎啉基)苯基]-1-丁酮、N,N-二甲基胺基苯乙酮等。市售品可列舉IGM Resins公司製Omnirad(Omnirad)907、BASF JAPAN股份公司製IRGACURE 369、IRGACURE 379等。 　　[0071] 醯基氧化磷系光聚合起始劑，可列舉上述的化合物。市售品可列舉BASF JAPAN股份公司製之IRGACURE TPO、IGM Resins公司製Omnirad(Omnirad)819等。 　　[0072] 作為光硬化劑成分使用肟酯系光聚合起始劑時，不僅少量也可得到充分的感度，且光聚合起始劑之揮發較少，故可減少乾燥爐等之裝置的污染。 　　[0073] 又，使用醯基氧化磷系光聚合起始劑時，提高光反應時之深部硬化性，故即使厚的半導體用封裝材，也可展現更有效果的翹曲矯正力，故較佳。 　　[0074] 又，光硬化劑成分可使用市售品，例如可適合使用BASF JAPAN股份公司製之IRGACURE 389、IRGACURE 784。 　　[0075] 如上述，活性能量線硬化性成分(B)使用藉由使熱硬化性成分(A)硬化時之熱能量或產生之硬化反應熱，活性能量線硬化性成分之硬化反應之一部分或未全部進行者為佳。因此，光硬化劑成分也為不會因熱能量或產生之硬化反應熱，實質上進行活性化(產生自由基)者為佳。這種光硬化劑成分，可列舉BASF JAPAN股份公司製之IRGACURE 379、IRGACURE 784、IRGACURE OXE01、IGM Resins公司製Omnirad(Omnirad)819等之肟化合物、上述通式表示之具有咔唑結構的肟酯化合物等。 　　[0076] 光硬化劑成分之調配量係相對於活性能量線硬化性成分(B)100質量份，較佳為1~25質量份，更佳為5~20質量份，又更佳為10~20質量份。特別是使用肟酯系光聚合起始劑時之光聚合起始劑調配量係相對於分子中含有乙烯性不飽和基之聚醚化合物100質量份，較佳為0.01~5質量份。 　　[0077] 本發明係半導體用封裝材中含有作為硬化劑成分之光硬化劑成分的情形可進一步含有光起始助劑或增感劑。光起始助劑及增感劑，可列舉苯偶姻化合物、苯乙酮化合物、蒽醌化合物、噻噸酮化合物、縮醛化合物、二苯甲酮化合物、3級胺化合物、及呫噸酮化合物等。光起始助劑及增感劑可1種單獨使用，也可以2種類以上的混合物使用。上述中，較佳為噻噸酮化合物及3級胺化合物。特別是含有噻噸酮化合物，在半導體用封裝材之深部硬化性的方面較佳。其中，包含2,4-二甲基噻噸酮、2,4-二乙基噻噸酮、2-氯噻噸酮、2,4-二異丙基噻噸酮等之噻噸酮化合物為佳。 　　[0078] 本發明之半導體用封裝材，可為液狀、顆粒狀、錠狀、或薄片狀之任一形態，但是加工成薄膜(或薄片)狀的情形時，也可含有薄膜(或薄片)形狀之維持容易的薄膜性賦予聚合物成分(C)。這種薄膜性賦予聚合物成分(C)，可列舉熱可塑性聚羥基聚醚樹脂或、環氧氯丙烷與各種2官能苯酚化合物之縮合物的苯氧基樹脂或存在於該骨架之羥醚部之羥基，使用各種酸酐或酸氯化物進行酯化的苯氧基樹脂、聚乙烯醇縮乙醛樹脂、聚醯胺樹脂、聚醯胺醯亞胺樹脂、嵌段共聚物等。此等之聚合物可1種單獨使用或組合2種以上使用。為了維持薄膜(或薄片)形狀時，此等聚合物之重量平均分子量(Mw)，通常為2×10⁴ 以上，較佳為2×10⁴ ~3×10⁶ 。 　　[0079] 又，本說明書中，重量平均分子量(Mw)之值，可藉由凝膠滲透層析法 　　(GPC)法(聚苯乙烯標準)，以下述測量裝置、測量條件測量。 　　測量裝置：Waters製「Waters 2695」 　　檢測器：Waters製「Waters2414」、RI(示差折射率計) 　　管柱：Waters製「HSPgel Column，HR MB-L，3μm，6mm×150mm」×2+Waters製「HSPgel Column，HR1，3μm，6mm×150mm」×2 　　測量條件： 　　管柱溫度：40℃ 　　RI檢測器設定溫度：35℃ 　　展開溶劑：四氫呋喃 　　流速：0.5ml/分鐘 　　樣品量：10μl 　　樣品濃度：0.7wt% 　　[0080] 聚乙烯醇縮乙醛樹脂，例如可藉由將聚乙烯醇樹脂以醛進行縮醛化而得。上述醛，無特別限定，可列舉例如甲醛、乙醛、丙醛、丁基醛等。 　　[0081] 苯氧基樹脂之具體例，可列舉新日鐵住金股份公司製FX280、FX293、Mitsubishi Chemical股份公司製YX8100、YL6954、YL6974等。 　　[0082] 聚乙烯醇縮乙醛樹脂之具體例，可列舉積水化學工業股份公司製S-LEC KS系列，聚醯胺樹脂可列舉日立化成股份公司製KS5000系列、日本化藥股份公司製BP系列等。 　　[0083] 聚醯胺醯亞胺樹脂，可列舉日立化成股份公司製KS9000系列等。 　　[0084] 熱可塑性聚羥基聚醚樹脂，具有茀骨架時，具有高的玻璃轉移溫度，耐熱性優異，故可維持半固形或固形環氧樹脂之低的熱膨脹率，同時維持該玻璃轉移溫度，所得的硬化皮膜為平衡良好兼具低的熱膨脹率與高的玻璃轉移溫度者。又，熱可塑性聚羥基聚醚樹脂因具有羥基，故對於擬似晶圓顯示良好的密著性。 　　[0085] 薄膜性賦予聚合物成分(C)可為構成上述成分之單體進行嵌段共聚合者。嵌段共聚物係指不同性質之二種類以上的聚合物以共價鍵連結成長連鏈之分子結構的共聚物。嵌段共聚物較佳為X-Y-X型或X-Y-X’型嵌段共聚物。X-Y-X型及X-Y-X’型嵌段共聚物之中，中央的Y為軟嵌段，且玻璃轉移溫度(Tg)低，其兩外側X或X’為硬嵌段，且玻璃轉移溫度(Tg)比中央之Y嵌段高的聚合物單位所構成者為佳。玻璃轉移溫度(Tg)係藉由示差掃描熱量測量(DSC)測量。 　　[0086] 又，X-Y-X型及X-Y-X’型嵌段共聚物之中，X或X’係Tg為50℃以上的聚合物單位所構成，Y的玻璃轉移溫度(Tg)為X或X’之Tg以下的聚合物單位所成之嵌段共聚物更佳。又，X-Y-X型及X-Y-X’型嵌段共聚物之中，X或X’為與熱硬化性成分(A)或活性能量線硬化性成分(B)之相溶性高者為佳，Y為與熱硬化性成分(A)或活性能量線硬化性成分(B)之相溶性低者為佳。如此，藉由兩端的嵌段與基質(硬化性成分)相溶，中央的嵌段與基質(硬化性成分)不相溶的嵌段共聚物，在基質中變得更容易顯示特殊的結構。 　　[0087] 上述各種薄膜性賦予聚合物成分(C)之中，較佳為苯氧基樹脂、聚乙烯醇縮乙醛樹脂、具有茀骨架之熱可塑性聚羥基聚醚樹脂、嵌段共聚物。 　　[0088] 在本發明之半導體用封裝材中，添加薄膜性賦予聚合物成分(C)的情形，構成半導體用封裝材之全成分中，薄膜性賦予聚合物成分(C)之比例無特別限定，全成分之合計作為100質量份時，較佳為2~40質量份，更佳為5~35質量份。 　　[0089] 本發明之半導體用封裝材中，可含有無機填料成分(D)。藉由含有無機填料成分(D)，例如FO-WLP之個片化(切割)時之切斷變得容易。又，藉由對保護膜施予雷射打印(marking)，在被雷射光削取的部分，無機填料成分(D)露出，因反射光擴散，呈現接近白色的顏色。藉此，FO-WLP用翹曲矯正材含有後述之著色劑成分(E)的情形，雷射打印部分與其他之部分，可得到對比差，具有打印(印字)變得明瞭的效果。 　　[0090] 無機填料成分(D)係將在未暴露於活性能量線的環境下，於150℃下進行加熱處理10分鐘後的半導體用封裝材，在25℃下照射含有波長351nm之紫外線1J/cm² 時的發熱量α(J/g)為1≦α(J/g)的範圍時，可無限制使用以往習知者，可列舉例如二氧化矽、氧化鋁、滑石、氫氧化鋁、碳酸鈣、二氧化矽(Neuburger Kieselerde)、玻璃粉末、黏土、碳酸鎂、天然雲母、合成雲母、硫酸鋇、鈦酸鋇、水滑石、礦渣棉(Mineral Wool)、矽酸鋁、矽酸鈣、鋅華、氧化鈦、氧化鐵、碳化矽、氮化硼等之粉末、將此等形成球形化的珠粒、單結晶纖維及玻璃纖維等，可1種單獨使用或混合2種以上使用。此等之中，較佳為二氧化矽、氧化鋁、氧化鈦。 　　[0091] 無機填料成分(D)使用平均粒徑，較佳為0.01~15μm，更佳為0.02~12μm，又特佳為0.03~10μm者為佳。又，本說明書中，平均粒徑係以電子顯微鏡測量不刻意選擇之無機填料(D)20個的長軸徑，作為其算術平均值算出的個數平均粒徑。 　　[0092] 無機填料成分(D)之含量係當半導體用封裝材中所含有之硬化性成分(A)及(B)與、兩者之硬化劑成分與、薄膜賦予性聚合物成分(C)之合計為100質量份時，相對於此，較佳為10~400質量份，更佳為20~350質量份，又特佳為30~300質量份。無機填料成分(D)之含量為400質量份以內的情形，將在未暴露於活性能量線的環境下，於150℃下進行加熱處理10分鐘後的半導體用封裝材，在25℃下照射含有波長351nm之紫外線1J/cm² 時的發熱量α(J/g)容易成為1≦α(J/g)，故較佳。 　　[0093] 本發明之半導體用封裝材，也可含有著色劑成分(E)。藉由含有著色劑成分(E)，將配置有半導體用封裝材之半導體晶片組裝於機器時，可防止因周圍之裝置所產生之紅外線等所致之半導體裝置之誤作動。又，藉由雷射打印等之手段，在半導體用封裝材上進行刻印的情形時，變得容易認識文字、符號等之標記。亦即，形成有半導體用封裝材的半導體晶片中，在保護膜之表面，型號等通常藉由雷射打印法(以雷射光切削保護膜表面，進行印字的方法)印字，但是因半導體用封裝材含有著色劑，充分取得保護膜之被雷射光切削的部分與未被切削之部分的對比差，提高辨識性。 　　[0094] 作為著色劑成分(E)之有機或無機的顏料及染料，可1種單獨或組合2種以上使用，此等之中，由電磁波或紅外線遮蔽性的觀點，較佳為黑色顏料。黑色顏料可使用碳黑、苝黑、氧化鐵、二氧化錳、苯胺黑、活性碳等，但是不限定於此等。從半導體裝置之誤作動防止的觀點，特佳為碳黑。又，代替碳黑，混合紅、藍、綠、黃色等之顏料或染料，也可形成黑色或接近黑色的黑色系的顏色。 　　[0095] 紅色著色劑可列舉單偶氮系、雙偶氮系、偶氮色澱系、苯并咪唑酮系、苝系、二酮吡咯並吡咯系、縮合偶氮系、蒽醌系、喹吖啶酮系等，具體而言，可列舉以下者。Pigment Red 1，2，3，4，5，6，8，9，12，14，15，16，17，21，22，23，31，32，112，114，146，147，151，170，184，187，188，193，210，245，253，258，266，267，268，269等之單偶氮系紅色著色劑、Pigment Red37，38，41等之雙偶氮系紅色著色劑、Pigment Red48：1，48：2，48：3，48：4，49：1，49：2，50：1，52：1，52：2，53：1，53：2，57：1，58：4，63：1，63：2，64：1，68等之單偶氮色澱系紅色著色劑、Pigment Red171、Pigment Red175、Pigment Red176、Pigment Red185、Pigment Red208等之苯并咪唑酮系紅色著色劑、SolventRed135、SolventRed179、Pigment Red123、Pigment Red149、Pigment Red166、Pigment Red178、Pigment Red179、Pigment Red190、Pigment Red194、Pigment Red224等之苝系紅色著色劑、Pigment Red254、Pigment Red255、Pigment Red264、Pigment Red270、Pigment Red272等之二酮吡咯並吡咯系紅色著色劑、Pigment Red220、Pigment Red144、Pigment Red166、Pigment Red214、Pigment Red220、Pigment Red221、Pigment Red242等之縮合偶氮系紅色著色劑、Pigment Red168、Pigment Red177、Pigment Red216、SolventRed149、SolventRed150、SolventRed52、SolventRed207等之蒽醌系紅色著色劑、Pigment Red122、Pigment Red202、Pigment Red206、Pigment Red207、Pigment Red209等之喹吖啶酮系紅色著色劑。 　　[0096] 藍色著色劑有酞菁系、蒽醌系等，顏料系分類成顏料(Pigment)的化合物，具體而言，可列舉：Pigment Blue15、Pigment Blue15：1、Pigment Blue15：2、Pigment Blue15：3、Pigment Blue15：4、Pigment Blue15：6、Pigment Blue16、Pigment Blue60等。染料系可使用Solvent Blue35、Solvent Blue63、Solvent Blue68、Solvent Blue70、Solvent Blue83、Solvent Blue87、Solvent Blue94、Solvent Blue97、Solvent Blue122、Solvent Blue136、Solvent Blue67、Solvent Blue70等。又，此等以外，也可使用金屬取代或無取代之酞菁化合物。 　　[0097] 綠色著色劑同樣有酞菁系、蒽醌系、苝系等，具體而言，可使用Pigment Green7、Pigment Green36、Solvent Green3、Solvent Green5、Solvent Green20、Solvent Green28等。上述以外，也可使用金屬取代或無取代之酞菁化合物。 　　[0098] 黃色著色劑有單偶氮系、雙偶氮系、縮合偶氮系、苯并咪唑酮系、異吲哚啉酮系、蒽醌系等，具體而言，可列舉以下者。可使用Solvent Yellow163、Pigment Yellow24、Pigment Yellow108、Pigment Yellow193、Pigment Yellow147、Pigment Yellow199、Pigment Yellow202等之蒽醌系黃色著色劑、Pigment Yellow110、Pigment Yellow109、Pigment Yellow139、Pigment Yellow179、Pigment Yellow185等之異吲哚啉酮系黃色著色劑、Pigment Yellow93、Pigment Yellow94、Pigment Yellow95、Pigment Yellow128、Pigment Yellow155、Pigment Yellow166、Pigment Yellow180等之縮合偶氮系黃色著色劑、Pigment Yellow120、Pigment Yellow151、Pigment Yellow154、Pigment Yellow156、Pigment Yellow175、Pigment Yellow181等之苯并咪唑酮系黃色著色劑、Pigment Yellow1，2，3，4，5，6，9，10，12，61，62，62：1，65，73，74，75，97，100，104，105，111，116，167，168，169，182，183等之單偶氮系黃色著色劑、Pigment Yellow12，13，14，16，17，55，63，81，83，87，126，127，152，170，172，174，176，188，198等之雙偶氮系黃色著色劑等。 　　[0099] 又，為了調整色調之目的，也可添加紫、橙、茶色、黑等的著色劑。具體例示時，可列舉Pigment Violet19、23、29、32、36、38、42、Solvent Violet13、36、C.I.顏料橙1、C.I.顏料橙5、C.I.顏料橙13、C.I.顏料橙14、C.I.顏料橙16、C.I.顏料橙17、C.I.顏料橙24、C.I.顏料橙34、C.I.顏料橙36、C.I.顏料橙38、C.I.顏料橙40、C.I.顏料橙43、C.I.顏料橙46、C.I.顏料橙49、C.I.顏料橙51、C.I.顏料橙61、C.I.顏料橙63、C.I.顏料橙64、C.I.顏料橙71、C.I.顏料橙73、C.I.顏料棕23、C.I.顏料棕25、C.I.顏料黑1、C.I.顏料黑7等。 　　[0100] 又，FO-WLP之扇出區域形成貫通電極的情形時，必須將扇出區域與FO-WLP用翹曲矯正層同時進行雷射加工，故校準(alignment)用，翹曲矯正層也具有光透過性為佳。適宜考慮這種的情形，可選擇著色劑成分(E)。 　　[0101] 著色劑成分(E)之調配量，從對深部之光透過性優異，結果可得到更佳之翹曲矯正層的觀點，當半導體用封裝材之半導體用封裝材中所含有之硬化性成分(A)及(B)與、兩者之硬化劑成分與、薄膜賦予性聚合物成分(C)之合計為100質量份時，相對於此，較佳為0.1~35質量份，更佳為0.5~25質量份，又特佳為1~15質量份之範圍。 　　[0102] 本發明之半導體用封裝材，為了提高對半導體晶片之接著性、密著性之至少之一，也可含有具有與無機物反應之官能基及與有機官能基反應之官能基的偶合劑成分(F)。又，藉由含有偶合劑成分(F)，可在不損及半導體用封裝材之耐熱性，而提高其耐水性。這種偶合劑，可列舉鈦酸鹽系偶合劑、鋁酸鹽(aluminate)系偶合劑、矽烷偶合劑等。此等之中，較佳為矽烷偶合劑。 　　[0103] 矽烷偶合劑所含有之有機基，可列舉例如乙烯基、環氧基、苯乙烯基、甲基丙烯醯氧基、丙烯醯氧基、胺基、脲基、氯丙基、巰基、聚硫離子基、異氰酸酯基等。矽烷偶合劑可使用市售者，可列舉例如KA-1003、KBM-1003、KBE-1003、KBM-303、KBM-403、KBE-402、KBE-403、KBM-1403、KBM-502、KBM-503、KBE-502、KBE-503、KBM-5103、KBM-602、KBM-603、KBE-603、KBM-903、KBE-903、KBE-9103、KBM-9103、KBM-573、KBM-575、KBM-6123、KBE-585、KBM-703、KBM-802、KBM-803、KBE-846、KBE-9007(均為商品名；信越化學工業股份公司製)等。此等可1種單獨使用，也可併用2種以上。 　　[0104] 本發明之半導體用封裝材中，除上述成分外，必要時，可調配各種添加劑。各種添加劑例如平坦劑、可塑劑、氧化劑、抗氧化劑、離子捕捉劑、吸附(gettering)劑、鏈轉移劑、剝離劑、防錆劑、密著促進劑、紫外線吸收劑、熱聚合抑制劑、增黏劑、消泡劑等在電子材料領域中，也可含有習知慣用的添加劑。 　　[0105] 本發明之半導體用封裝材中，可含有機溶劑。有機溶劑係在分子中含有乙烯性不飽和基之聚醚化合物之合成、各成分之混合、及所得之半導體用封裝材塗佈於基板或支撐體薄膜時，可使用於調整黏度。 　　[0106] 有機溶劑可列舉酮類、芳香族烴類、乙二醇醚類、乙二醇醚乙酸酯類、酯類、醇類、脂肪族烴、石油系溶劑等。 　　[0107] 具體而言，可列舉甲基乙基酮、環己酮等之酮類、甲苯、二甲苯、四甲基苯等之芳香族烴類、溶纖劑、甲基溶纖劑、丁基溶纖劑、卡必醇、甲基卡必醇、丁基卡必醇、丙二醇單甲醚、二丙二醇單甲醚、二丙二醇二乙醚、三乙二醇單乙醚等之二醇醚類、乙酸乙酯、乙酸丁酯、二丙二醇甲醚乙酸酯、丙二醇甲醚乙酸酯、丙二醇乙醚乙酸酯、丙二醇丁醚乙酸酯等之酯類、乙醇、丙醇、乙二醇、丙二醇等之醇類、辛烷、癸烷等之脂肪族烴、石油醚、石油腦、氫化石油腦、溶劑石油腦等之石油系溶劑等。有機溶劑可1種單獨使用，也可組合2種以上使用。 　　[0108] 本發明之半導體用封裝材作為薄膜(或薄片狀)形狀的情形，其厚度無特別限定，較佳為3~500μm，更佳為5~450μm，又特佳為7~400μm。 　　[0109] 本發明之半導體用封裝材，包含含有作為熱硬化性成分(A)之環狀醚類化合物，作為活性能量線硬化性成分(B)之分子中具有1個以上之乙烯性不飽和基的化合物時，因具有初期密著性，故藉由在未硬化狀態下，緊壓於擬似晶圓或晶片等，可容易接著。又，緊壓時，對於半導體用封裝材，可施予加熱及加壓之任一手段。然後，經過不同的硬化反應，最終可形成密著性與翹曲矯正力高的硬化膜(翹曲矯正層)。使用本發明之半導體用封裝材形成的硬化膜(翹曲矯正層)，其接著強度也優異，即使在嚴苛高溫度高濕度條件下，也可保持充分的保護機能。又，使半導體用封裝材硬化所得的翹曲矯正層，可為單層構造，也可為多層構造。 　　[0110] 本發明之半導體用封裝材，可形成乾薄膜化來使用，也可直接液狀的狀態使用。以液狀使用時，可為1液性，也可為2液性以上。 　　[0111] 乾薄膜化時，以有機溶劑稀釋半導體用封裝材，調整成適當的黏度，使用缺角輪塗佈機、刮刀塗佈機、唇模塗佈機、桿塗佈機、擠壓塗佈機、逆輥塗佈機、轉移輥塗佈機、凹版塗佈機、噴霧塗佈機等，於支撐體薄膜上塗佈成均勻的厚度，通常以50~130℃之溫度乾燥1~30分鐘，可得到膜。 　　[0112] 塗佈膜厚無特別限制，從得到具有更佳翹曲矯正能力之半導體用封裝材的觀點，一般乾燥後之乾薄膜的膜厚為在5~150μm，較佳為在10~60μm之範圍適宜選擇。 　　[0113] 支撐體薄膜可適合使用防黏紙(separate paper)、防黏薄膜、台紙、剝離薄膜、剝離紙等之以往習知者。又，也可使用聚對苯二甲酸乙二酯(PET)或聚萘二甲酸乙二酯(PEN)等之聚酯薄膜、延伸聚丙烯薄膜(OPP)等之聚烯烴薄膜、聚醯亞胺薄膜等之塑膠薄膜所成之脫模紙用基材之單面或兩面，形成脫模層者。脫模層只要是具有脫模性的材料時，即無特別限定，可列舉例如矽氧樹脂、有機樹脂改質矽氧樹脂、氟樹脂等。 　　[0114] 支撐體薄膜之厚度，無特別限制，一般在10~150μm之範圍內適宜選擇。 　　[0115] 在支撐體薄膜上，使半導體用封裝材成膜後，進一步，為了防止膜的表面附著塵埃等之目的，在膜的表面可層合可剝離的覆蓋薄膜。可剝離的覆蓋薄膜，例如可使用聚乙烯薄膜、聚四氟乙烯薄膜、聚丙烯薄膜、經表面處理的紙等。考慮覆蓋薄膜之剝離，使膜與覆蓋薄膜之接著力，小於膜與支撐體薄膜之接著力。According to the present invention, when a semiconductor packaging material is used, and a pseudo wafer is formed by heat molding, the semiconductor chip is formed with a convex on the circuit surface side due to shrinkage of the semiconductor packaging material after thermal curing. The circuit surface side of the chip is irradiated with active energy rays, and the warpage of the pseudo-wafer can be corrected by the volume shrinkage of the semiconductor packaging material existing between the semiconductor chips. In addition, in the rewiring forming step, when a concave warp occurs on the circuit surface side of the chip, active energy rays are irradiated on the surface opposite to the above-mentioned surface, and the volume of the package material for semiconductors on the opposite side to the circuit surface of the semiconductor chip passes through the volume of the semiconductor chip. Shrinkage to correct warpage. In addition, the warpage correction amount can also be adjusted by adjusting the irradiation amount of the active energy ray. [Mode for Carrying Out the Invention] [0026] The packaging material for semiconductors of the present invention is characterized in that the thermosetting component (A) and the active energy ray-curing component (B), which contain at least two components, will not be exposed to active The calorific value α (J/g) when the package material for semiconductors after heat treatment at 150°C for 10 minutes under the environment of energy rays and irradiated at 25°C with 1 J/cm ² of ultraviolet rays with a wavelength of 351 nm is 1≦α (J/g). According to the present invention, after further heat treatment, that is, after the curing reaction of the thermosetting component (A) has progressed to a certain extent, the calorific value when irradiated with active energy rays is, as described above, because the active energy rays are contained in an amount of 1 J/g or more. The curable component promotes the curing shrinkage of the active energy ray curable component contained in the package material on the side irradiated with the active energy ray, and can change the state of warpage. The calorific value α is more preferably 2 J/g or more, still more preferably 3 J/g or more, and particularly preferably 4 J/g or more. The larger the calorific value α, the more accelerated the curing shrinkage of the active energy ray curable component, but the upper limit is approximately 300 J/g. In this specification, "the heat value α when the package material for semiconductors is subjected to heat treatment at 150°C for 10 minutes and irradiated at 25°C with 1 J/cm ² of ultraviolet rays having a wavelength of 351 nm" means before curing. The package composition for semiconductors is heated from 25°C to 150°C at 10°C/min, held at 150°C for 10 minutes, and then cooled to 25°C at a temperature drop rate of 10°C/min , using a differential scanning calorimetry device (a device combining a differential scanning calorimetry device and a light inspection device), irradiate the active energy ray 1J/cm ² with a wavelength of 351nm to measure the calorific value α (J/g). A means of raising the temperature from 25°C to 150°C at 10°C/min and holding at 150°C for 10 minutes and means of cooling to 25°C at a cooling rate of 10°C/min include a hot plate or DSC. In addition, the present invention is a semiconductor when the package material for semiconductors before curing is heated from 25°C to 230°C by a differential scanning calorimeter (DSC) at a rate of 10°C/min in an environment that is not exposed to active energy rays. The calorific value β of the packaging material is preferably 1 J/g or more. As a package material for semiconductors containing a thermosetting component (A) having such a calorific value β and an active energy ray-curable component (B), the initial curing reaction proceeds rapidly, so FO-WLP and the like are simulated. When the wafer is formed, it becomes easy to maintain its shape. When the package material for semiconductors is heated from room temperature, the calorific value is large and the hardening reaction is accelerated, so the upper limit of the calorific value β is not particularly limited, but it is considered to adjust the amount of hardening shrinkage by irradiating active energy rays after the heating and hardening reaction. , the upper limit of the calorific value is about 300J/g. In addition, the present invention uses the differential scanning calorimeter of the semiconductor packaging material after heat treatment at 150° C. for 10 minutes without exposure to active energy rays for the semiconductor packaging material before curing. (DSC) The calorific value γ when the temperature is raised from 25°C to 230°C at 10°C/min is preferably 1 J/g or more. In this way, in the package material for semiconductors after the heat treatment, that is, after the curing reaction of the thermosetting component (A) has progressed to a certain extent, by including the component whose calorific value γ is 1 J/g or more, even at 150° C. for 10 minutes The heat treatment of the semiconductor package material is not completed, so when the pseudo wafer such as FO-WLP is formed, it becomes easy to maintain its shape, and at the same time, it is irradiated with active energy rays after the heat curing reaction. , it is easy to adjust the amount of hardening shrinkage. Even if the thermosetting component (A) contained in the package material for semiconductors is thermally cured, the curing reaction of the active energy ray-curable component (B) does not proceed, but the thermosetting component (A) is completely cured. At this time, the molecular motion of the active energy ray hardening component (B) is restricted, so that the hardening reaction by the active energy ray becomes difficult to proceed. According to the present invention, as the encapsulating material for semiconductors having a calorific value γ of 1 J/g or more in the heat treatment at 150° C. for 10 minutes, the active energy ray curing reaction after the thermosetting reaction is facilitated, and the amount of curing shrinkage can be adjusted. . The upper limit of the calorific value γ is not particularly limited, but the upper limit of the calorific value is about 300 J/g in consideration of the shape retention of the pseudo-wafer by the thermal hardening reaction. [0030] The measurement of the heat of reaction accompanying the hardening reaction of the packaging material for semiconductors can be performed using a DSC apparatus. For example, DSC Q100 manufactured by TA INSTRUMENT, which is a thermal DSC, can be used. In addition, as for the packaging material for semiconductors, the calorific value when irradiated with active energy rays of 1 J/cm ² is measured, and an optical DSC apparatus in which a device for irradiating active energy rays such as ultraviolet rays (for example, an ultraviolet irradiation unit) is incorporated into a DSC apparatus can be used. Take measurements. Optical DSC device, such as the DSC module of DSC Q100 manufactured by TA INSTRUMENT, uses the built-in high-pressure mercury lamp light DSC light source device PCA, and introduces active energy rays through dual light guides, which will The heat of reaction during thermal hardening reaction in a wire environment or the heat of reaction during photohardening reaction when a predetermined amount of active energy rays are irradiated can be quantitatively measured. Hereinafter, each component which comprises the package material for semiconductors of this invention is demonstrated. <Thermosetting component (A)> The thermosetting component (A) contained in the packaging material for semiconductors of the present invention, for example, a thermosetting agent component, etc., which initiates the curing reaction, can be used without particular limitation. Although conventionally known materials are used, cyclic ethers such as epoxy and oxetane are preferably used. These cyclic ethers such as epoxy and oxetane shrink in volume due to the curing reaction. However, as will be described later, when the thermosetting component (A) is cured, the adhesion to the pseudo wafer is improved. Therefore, the strength of the pseudo wafer can be improved, and the adhesion between the semiconductor chip and the semiconductor packaging material can be improved at the same time. [0032] The epoxy resin has solid, semi-solid, and liquid epoxy resins from the shape before the reaction. These can be used alone or in combination of two or more. Solid epoxy resins include epoxides (trisphenol type epoxy resins) of condensates of phenols such as EPPN-502H (trisphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd. and aromatic aldehydes having a phenolic hydroxyl group. ); Dicyclopentadiene aralkyl type epoxy resins such as EPICLON HP-7200H (multifunctional solid epoxy resin containing dicyclopentadiene skeleton) manufactured by DIC Corporation; EPICLON N660, EPICLON N690 manufactured by DIC Corporation , Novolak type epoxy resins such as EOCN-104S manufactured by Nippon Kayaku Co., Ltd.; phenol novolac epoxy resins such as DEN-431 manufactured by The Dow Chemical Company; Biphenyl type epoxy resins such as YX-4000 manufactured by Mitsubishi Chemical Co., Ltd. Epoxy resins; phosphorus-containing epoxy resins such as TX0712 manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd.; 3 (2,3-epoxypropyl) isocyanurate such as TEPIC manufactured by Nissan Chemical Industry Co., Ltd. Semi-solid epoxy resin, can enumerate DIC Co., Ltd. system EPICLON860, EPICLON900-IM, EPICLONEXA-4816, EPICLONEXA-4822, Nippon Steel & Sumitomo Metal Co., Ltd. system EPOTOHTOYD-134, Mitsubishi Chemical Co., Ltd. system jER828, jER834, jER872 , jER1001, bisphenol A type epoxy resin such as ELA-134 made by Sumitomo Chemical Industry Co., Ltd.; phenol novolac type epoxy resin such as EPICLONN-740 made by DIC Co., Ltd. Liquid epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechin can be mentioned Phenol type epoxy resin, glycidylamine type epoxy resin, aminophenol type epoxy resin, alicyclic epoxy resin, etc. The above-mentioned thermosetting component (A) can be used alone or in combination of two or more. [0036] The semiconductor packaging material of the present invention preferably contains a curing agent component capable of curing the above-mentioned thermosetting component (A). As the thermosetting agent component, a thermosetting component (A) can be ionic in ring-opening polymerization or polymerization reaction of addition polymerization by heat. [0037] As the curing agent component that can generate ionic ring-opening polymerization of the thermosetting component (A), imidazoles, benzyl perionate salts, Lewis acid-amine complexes, and the like can be used. Among them, imidazoles are preferably used from the viewpoints of adhesion to pseudo wafers, storage stability, moisture resistance reliability, and the like. Imidazoles can enumerate for example 2MZ, C11Z, 2PZ, 2E4MZ, 2P4MZ, 1B2MZ, 1B2PZ, 2MZ-CN, 2E4MZ-CN, 2PZ-CN, C11Z-CN, 2PZ-CNS, C11Z-CNS, 2MZ-A, C11Z-A, 2E4MZ-A, 2P4MHZ, 2PHZ, 2MA-OK, 2PZ-OK (manufactured by Shikoku Chemical Industry Co., Ltd., product name), etc., or compounds obtained by adding these imidazoles to epoxy resins. In addition, it is preferable that these curing agents are coated with a polyurethane-based, polyester-based polymer substance or the like to form microcapsules because the usable time can be prolonged. These can be used individually or in mixture of 2 or more types. [0039] The compounding amount of the imidazoles is relative to the thermosetting component (A), and is preferably 0.1 to 10 mass %, more preferably 0.5 to 10 mass %, and more preferably 1 to 10 mass %. By blending the imidazoles as the curing agent component that can perform ionic ring-opening polymerization in the above-mentioned range, it is possible to have both curability and storage stability. SI-45, SI-60, SI-80, SI-100, SI-150, SI-110, SI-360, SI-60, SI-80, SI-100, SI-150, SI-110, SI-360, SI- 360, SI-B2A, SI-B3A, SI-B3, SI-B4, SI-B5. These can be used individually or in mixture of 2 or more types. [0041] The compounding amount of the benzyl perionate is preferably 0.1 to 10 mass %, more preferably 0.5 to 10 mass %, and more preferably 1 to 10 mass %, relative to the thermosetting component (A). By blending the benzyl perilinium salt of the curing agent component capable of ionic ring-opening polymerization within the above-mentioned range, both curability and storage stability can be achieved. Also, as the Lewis acid-amine complex, known ones such as BF _{3 -triethylamine complex or BF 3 -pyridine} complex can be used. The compounding amount of the thermosetting agent components such as Lewis acid-amine complexes is relative to the thermosetting component (A), preferably 0.1 to 10 mass %, more preferably 0.5 to 10 mass %, and even more Preferably it is 1-10 mass %. By mixing the Lewis acid-amine complex or the like of the curing agent component capable of ionic ring-opening polymerization within the above range, it is possible to have both curability and storage stability. [0044] The thermosetting component (A) can be hardened by a polymerization reaction of addition polymerization. As a hardening agent component which can add-polymerize the thermosetting component (A), acid anhydrides, carboxylic acids, amines, phenols, hydrazines, polythiols, etc. can be used. Among them, carboxylic acids, amines, and phenols are preferably used from the viewpoints of adhesion to pseudo wafers, storage stability, moisture resistance reliability, and the like. As the acid anhydrides, for example, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, methyl 5-bicycloheptene-2,3-dicarboxylate can be used Acid anhydride, pyromellitic dianhydride, benzophenone tetracarboxylic dianhydride, 3,4-dimethyl-6-(2-methyl-1-propenyl)-1,2,3,6-tetra Hydrophthalic anhydride, 1-isopropyl-4-methyl-bicyclo[2.2.2]oct-5-ene-2,3-dicarboxylic anhydride, etc. These can be used individually or in mixture of 2 or more types. The compounding amount of the acid anhydride, for example, when the thermosetting component (A) is an epoxy compound, the ratio of the number of hardening functional groups (epoxy groups) to the number of carboxylic acids generated by the acid anhydride group (thermosetting The number of hardening functional groups of the component (A)/the number of carboxylic acids) is preferably 0.2 to 20, and more preferably 0.4 to 16. By making the compounding quantity of an acid anhydride into the said range, hardening reaction can be performed efficiently. In addition, when the thermosetting component (A) is other than the epoxy group, the ratio of the number of hardening functional groups participating in the hardening reaction to the number of carboxylic acids derived from the acid anhydride group (the thermosetting component (A) can be calculated similarly. ) the number of hardening functional groups / the number of carboxylic acids). Carboxylic acid can use adipic acid, maleic acid, methyltetrahydrophthalic acid, methylhexahydrophthalic acid, hexahydrophthalic acid, methyl 5-bicycloheptene-2, 3-biscarboxylic acid, pyromellitic acid, benzophenone tetracarboxylic acid, 3,4-dimethyl-6-(2-methyl-1-propenyl)-1,2,3,6-tetra Hydrophthalic acid, 1-isopropyl-4-methyl-bicyclo[2.2.2]oct-5-ene-2,3-dicarboxylic acid, resins having a carboxyl group in a side chain, and the like. The compounding amount of carboxylic acid, when the thermosetting component (A) is an epoxy compound, the ratio of the number of hardening functional groups (epoxy groups) to the number of carboxyl groups (hardening of the thermosetting component (A) The number of functional groups/the number of carboxyl groups) is preferably 0.2 to 20, and more preferably 0.4 to 16. By making the compounding quantity of a carboxylic acid into the said range, a hardening reaction can be performed efficiently. In addition, when the thermosetting component (A) is other than the epoxy group, the ratio of the number of hardening functional groups participating in the hardening reaction and the number of carboxyl groups (the ratio of the hardening functional group of the thermosetting component (A) to the number of carboxyl groups) can be calculated similarly. number/number of carboxyl groups). The amines are not particularly limited as long as they are compounds having at least one or more primary or secondary amine groups in the molecule, but are preferably aromatic amines from the viewpoints of storage stability and heat resistance of the cured product. As the aromatic amines, for example, diaminodiphenylmethane, diaminodiphenyl sulfide, diaminodiphenyl sulfide, m-xylenediamine, 3,3'-diethyl-4,4' can be used. -Diaminodiphenylmethane, 3,3',5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4 ,4'-Diaminodiphenyl sulfide, 2,2-bis-[4-(4-aminophenoxy)phenyl]-hexafluoropropane, 2,2-bis(4-aminophenyl) )-hexafluoropropane, 2,4-diaminotoluene, 1,4-diaminobenzene, 1,3-diaminobenzene, diethyltoluenediamine, dimethyltoluenediamine, anilines, Alkylated anilines, N-alkylated anilines, etc. These can be used individually or in mixture of 2 or more types. The compounding amount of amines is the ratio of the number of hardening functional groups (epoxy groups) to the number of active hydrogens (the number of epoxy groups/activity when the thermosetting component (A) is an epoxy compound) The number of hydrogen) is preferably 0.2 to 20, and more preferably 0.4 to 16. By making the compounding quantity of an amine into the said range, a hardening reaction can be performed efficiently. In addition, when the thermosetting component (A) is other than the epoxy group, the ratio of the number of hardening functional groups participating in the hardening reaction to the number of active hydrogen (the hardening functional group of the thermosetting component (A) can be calculated in the same manner number/number of active hydrogens). Phenols can use phenol novolak resin, alkylphenol novolak resin, bisphenol A novolak resin, dicyclopentadiene type phenolic resin, Xylok type phenolic resin, terpene modified phenolic resin, cresol/ Naphthol resins, polyvinylphenols, phenol/naphthol resins, phenol resins containing α-naphthol skeleton, cresol novolac resins containing triazine, various polyfunctional phenol resins, etc. These can be used individually by 1 type or in mixture of 2 or more types. The compounding amount of phenols is the ratio of the number of hardening functional groups (epoxy groups) to the number of phenolic hydroxyl groups (the number of epoxy groups/ The number of phenolic hydroxyl groups) is preferably 0.2 to 20, more preferably 0.4 to 16. The hardening reaction can be efficiently performed by making the compounding quantity of a phenol into the said range. In addition, when the thermosetting component (A) is other than epoxy group, the ratio of the number of hardening functional groups participating in the hardening reaction to the number of phenolic hydroxyl groups (the hardening functional group of the thermosetting component (A) can be calculated in the same manner number of bases/number of phenolic hydroxyl groups). [0053] In addition to the above, as a hardener component that can polymerize the thermosetting component (A) by a polymerization reaction of addition polymerization, a cyanate ester resin or an active ester resin can be used. The cyanate resin is a compound having two or more cyanate groups (—OCN) in one molecule. As the cyanate resin, a conventionally known one can be used. Examples of the cyanate resin include phenol novolak type cyanate resin, alkylphenol novolak type cyanate resin, dicyclopentadiene type cyanate resin, bisphenol A type cyanate resin, bisphenol F type cyanate resin, bisphenol S type cyanate resin. In addition, a part of the triazinized prepolymer may be used. [0054] The active ester resin is a resin having two or more active ester groups in one molecule. Active ester resins are generally obtained by condensation reaction of carboxylic acid compounds and hydroxyl compounds. Among them, the hydroxyl compound is preferably an active ester compound obtained by using a phenol compound or a naphthol compound. The phenol compound or naphthol compound includes hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, and methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2 , 6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, benzenetriol, dicyclopentadienol, phenol novolac, etc. When using carboxylic acid, acid anhydrides, amines, phenols, cyanate resins, and active ester resins as a hardener component that can polymerize the thermosetting component (A) by a polymerization reaction of addition polymerization, A hardening accelerator can be used together. As the hardening accelerator, the aforementioned imidazoles can be used. In addition, guanamines such as acetoguanamine and benzoguanamine; diaminodiphenylmethane, m-phenylenediamine, m-xylylenediamine, diaminodiphenylamine, dicyandiamide , urea, urea derivatives, melamine, polyamines such as polybasic hydrazine and other organic acid salts and/or epoxy adducts; amine complexes of boron trifluoride; ethyldiamine- Triazine derivatives of S-triazine, 2,4-diamino-S-triazine, 2,4-diamino-6-xylyl-S-triazine, etc.; tributylphosphine, tributylphosphine, Organic phosphines such as phenylphosphine, tri-2-cyanoethylphosphine, etc.; tri-n-butyl(2,5-dihydroxyphenyl)phosphonium bromide, hexadecyltributylphosphonium chloride, etc. Phosphonium salts; quaternary ammonium salts of benzyltrimethylammonium chloride, phenyltributylammonium chloride, etc.; the aforementioned polybasic acid anhydrides. These can be used individually by 1 type or in mixture of 2 or more types. The hardening accelerator component is not essential, but in particular, in the case of promoting the hardening reaction, it is relative to 100 mass of the hardening agent component that can be polymerized by the polymerization reaction of addition polymerization of the thermosetting component (A) with the above-mentioned heat. parts, preferably within the range of 0.01 to 20 parts by mass. When a metal catalyst is used as a hardening accelerator component, its content is 10-550 ppm in metal conversion with respect to 100 mass parts of hardening components, and it is more preferable that it is 25-200 ppm. <Active energy ray curable component (B)> The packaging material for semiconductors of the present invention contains an active energy ray curable component (B). The active energy ray curable component refers to a component that undergoes a hardening reaction by irradiation with active energy rays. In addition, in this specification, an active energy ray means the electromagnetic wave which has the energy required to excite a hardening|curing agent component from a base state to a transition state, for example, an electron beam, an ultraviolet-ray, a visible ray, etc. are mentioned. Such an active energy ray curable component (B) can be selected from known materials, and for example, a curable component curable by a radical addition polymerization reaction can be suitably used. In the present specification, radical addition polymerization refers to a reaction in which polymerization is initiated by radicals, and an unsaturated compound having a double bond or triple bond is added to form a polymer. The curable component which can be cured by such radical addition polymerization reaction is preferably a compound having one or more ethylenically unsaturated groups in the molecule. In the packaging material for semiconductors, by containing the above-mentioned thermosetting component (A) and active energy ray curable component (B), when the packaging material for semiconductors is cured, the thermosetting component (A) can be cured. ) and the active energy ray curable component (B) are individually cured. Therefore, when the semiconductor packaging material is used to produce a pseudo wafer, the irradiation amount of the active energy rays is adjusted according to the warpage direction or the amount of warpage of the wafer, so that the irradiation surface side of the active energy rays is generated in the same manner as in the pseudo wafer. The warping stress is the same as the shrinkage stress. As a result, even when FO-WLPs having different materials, thicknesses, and patterns of rewiring layers are produced, FO-WLPs with reduced warpage can be obtained. From the viewpoint of controlling the amount of shrinkage of the packaging material for semiconductors according to the amount of warpage, the active energy ray-curable component (B) is preferably one that undergoes volume shrinkage by radical addition polymerization. In addition, as the active energy ray-curable component (B), the curing reaction of the active energy ray-curable component is not completely carried out by the heat energy when the above-mentioned thermosetting component (A) is cured or the curing reaction heat generated. good. A specific example of such a radical addition polymerization reactive component. For example, conventionally known polyester (meth)acrylate, polyether (meth)acrylate, urethane (meth)acrylate, carbonate (meth)acrylate, epoxy (meth)acrylate, base) acrylate, etc. Specifically, hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, etc.; glycols such as ethylene glycol, methoxytetraethylene glycol, polyethylene glycol, propylene glycol, etc. diacrylates; N,N-dimethylacrylamide, N-methylol acrylamide, N,N-dimethylaminopropylacrylamide and other acrylamides; N,N - Amino alkyl acrylates such as dimethylaminoethyl acrylate, N,N-dimethylaminopropyl acrylate; hexanediol, trimethylolpropane, pentaerythritol, dipentaerythritol, trimethylol - Polyols such as hydroxyethyl isocyanurate or polyvalent acrylates such as ethylene oxide adducts, propylene oxide adducts, or ε-caprolactone adducts; Phenoxyacrylates, bisphenol A diacrylates, and polyvalent acrylates such as ethylene oxide adducts or propylene oxide adducts of these phenols; glycerol diglycidyl ether , Polyvalent acrylates of glycidyl ether such as glycerol triglycidyl ether, trimethylolpropane triglycidyl ether, triglycidyl isocyanurate, etc.; not limited to the above, can be Polyols such as polyether polyols, polycarbonate diols, hydroxyl-terminated polybutadienes, polyester polyols, etc. are directly acrylated or urethane acrylated via diisocyanates. and melamine acrylate, and at least any one of methacrylates corresponding to the aforementioned acrylates, and the like. Among the above, the preferable acryl group equivalent is 500 or less, more preferably 300 or less, and particularly preferably less than 200. [0060] In addition, the following maleimide compounds can be used as the active energy ray curable component (B) curable by a radical addition polymerization reaction. For example, N-methylmaleimide, N-ethylmaleimide, Nn-propylmaleimide, N-isopropylmaleimide, Nn-butylmaleimide Imine, N-isobutylmaleimide, N-sec-butylmaleimide, N-tert-butylmaleimide, Nn-hexylmaleimide, Nn-ten Dialkylmaleimide, N-allylmaleimide, N-benzylmaleimide, N-cyclohexylmaleimide, N-phenylmaleimide, N-nitrophenylmaleimide, N-hydroxyphenylmaleimide, N-methoxyphenylmaleimide, N-ethoxyphenylmaleimide, N- -Monochlorophenylmaleimide, N-dichlorophenylmaleimide, N-monomethylphenylmaleimide, N-dimethylphenylmaleimide, N- -Ethylphenylmaleimide, ethylidene bismaleimide, N,N'-m-phenylene bismaleimide, N,N'-p-phenylenebismaleimide Lyimide, N,N'-hexamethylenebismaleimide, N,N'-p,p'-diphenyldimethylsilylbismaleimide, N,N '-p,p'-diphenylmethane bismaleimide, N,N'-p,p'-diphenyl ether bismaleimide, N,N'-p,p'-diphenyl bismaleimide, N,N'-diphenyl bismaleimide, N,N'-dicyclohexylmethane bismaleimide, N,N'-m-imide Xylyl bismaleimide, N,N'-p,p'-benzophenone bismaleimide, N,N'-(3,3'-dichloro-p,p'- Biphenylene) bismaleimide, etc. When a maleimide compound is used as the active energy ray-curable component (B), a photo-radical initiator described later may be used or not, and a photodimerization reaction may be performed by irradiation with an active energy ray. Reduces warpage of semiconductor packages. [0061] In addition to the above, the active energy ray-curable component (B) that can be cured by a radical addition polymerization reaction, the compounds such as the following (1) to (11) can be used. (1) The reaction product obtained by reacting an unsaturated group-containing monocarboxylic acid with a compound having a plurality of phenolic hydroxyl groups in one molecule and an alkylene oxide (alkylene oxide) is reacted, and the obtained reaction product is further reacted with a polyvalent An unsaturated group-containing polymer obtained by an acid anhydride reaction, (2) a bifunctional or higher polyfunctional epoxy resin is reacted with (meth)acrylic acid, and the dibasic acid anhydride is added to the hydroxyl group present in the side chain. Acrylic polymer, (3) A polyfunctional epoxy resin in which the hydroxyl group of the bifunctional epoxy resin is epoxidized with epichlorohydrin is reacted with (meth)acrylic acid, and the dibasic acid anhydride is added to the generated hydroxyl group-containing acrylic acid (4) A polymer obtained by reacting an unsaturated group-containing monocarboxylic acid with a reaction product obtained by reacting a compound having a plurality of phenolic hydroxyl groups in one molecule with a reaction product obtained by reacting a cyclic carbonate compound to obtain The reaction product is then reacted with polybasic acid anhydride to obtain unsaturated group-containing polymer, (5) by diisocyanate and bifunctional epoxy resin (meth)acrylate or its partial acid anhydride modified product, carboxyl group-containing acrylic acid-containing urethane resin obtained by polyaddition reaction of diol compound and diol compound, (6) unsaturated-containing urethane resin obtained by copolymerization of unsaturated carboxylic acid and unsaturated group-containing compound (7) In the synthesis of the resin obtained by the polyaddition reaction of a diisocyanate with a carboxyl group-containing diol compound and a diol compound, (meth)acryloyl having one hydroxyl group and one or more in the molecule is added (8) Resin obtained by polyaddition reaction of diisocyanate with carboxyl-containing diol compound and diol compound In the urethane resin containing acrylic acid, the compound having one isocyanate group and one or more (meth)acryloyl groups in the molecule is added, and the terminal (meth)acrylation is carried out. 5) In the synthesis of the resin, a compound having one hydroxyl group and one or more (meth)acryloyl groups in the molecule is added, and an acrylic acid-containing urethane resin is (meth)acrylated at the end, ( 10) In the synthesis of the resin of the above (5), a compound having one isocyanate group and one or more (meth)acryloyl groups in the molecule is added, and the terminal (meth)acrylated acrylic acid-containing amino group is carried out. Formate resins, and (11) resins of (1) to (10) above, further adding a compound having one epoxy group and one or more (meth)acryloyl groups in one molecule. Acrylic polymers and the like can be used alone or in combination of two or more, or in combination with the above-mentioned monomers having one or more ethylenically unsaturated groups in the molecule. The above-mentioned active energy ray curable component (B) is used in an environment that is not exposed to active energy rays, with differential scanning calorimeter (DSC) at 10°C/min from 25°C to 230°C heat generation when heating It is better if the amount is substantially 0J/g. In order to carry out the thermosetting reaction of the thermosetting component (A), when the heat treatment is performed, by using the active energy ray hardening component (B) in which the active energy ray hardening reaction has not progressed, the active energy ray can be more easily transmitted by the active energy ray. After irradiation, adjustment of the amount of hardening shrinkage (that is, adjustment of the amount of warpage) is performed. [0063] The packaging material for semiconductors of the present invention preferably contains a curing agent component (hereinafter also referred to as a light curing agent component) capable of curing the active energy ray-curable component (B). The photocuring agent component may be what can radically polymerize the active energy ray curable component (B) by active energy ray. Also, the photohardening agent component, for example, bis-(2,6-dichlorobenzyl) phenyl phosphorus oxide, bis-(2,6-dichlorobenzyl)-2,5 -Dimethylphenylphosphonium oxide, bis-(2,6-dichlorobenzyl)-4-propylphenylphosphonium oxide, bis-(2,6-dichlorobenzyl)-1- Naphthyl phosphorus oxide, bis-(2,6-dimethoxybenzyl) phenyl phosphorus oxide, bis-(2,6-dimethoxybenzyl)-2,4,4-tris Methylpentylphosphorus oxide, bis-(2,6-dimethoxybenzyl)-2,5-dimethylphenylphosphorus oxide, bis-(2,4,6-trimethylbenzyl) Acryloyl)-phenylphosphorus oxide (Omnirad (Omnirad) 819 manufactured by IGM Resins), 2,6-dimethoxybenzyldiphenylphosphonium oxide, 2,6-dichlorobenzyldiphenyl Phosphorus oxide, 2,4,6-trimethylbenzylphenylphosphite methyl ester, 2-methylbenzyldiphenylphosphine oxide, isotrimethylacetylphenylphosphite Propyl ester, 2,4,6-trimethylbenzyldiphenylphosphine oxide (IRGACURE TPO manufactured by BASF JAPAN Co., Ltd.) and other acylphosphorus oxides; 1-Hydroxy-cyclohexyl phenyl ketone, 1 -[4-(2-Hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy -2-Methyl-propanyl)-benzyl]phenyl}-2-methyl-propan-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, etc. Acetophenones; benzoin, benzyl, benzoin methyl ether, benzoin ethyl ether, benzoin n-propyl ether, benzoin isopropyl ether, benzoin n-butyl ether, etc. Class; benzoin alkyl ethers; benzophenone, p-methylbenzophenone, Michler's ketone, methylbenzophenone, 4,4'-dichlorobenzophenone, 4,4 '-Bisdiethylaminobenzophenone and other benzophenones; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy- 2-phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1-[4-(methylthio)phenyl]-2- Lino-1-acetone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1, 2-(dimethylamino)-2-[ Acetophenones such as (4-methylphenyl)methyl)-1-[4-(4-morpholinyl)phenyl]-1-butanone, N,N-dimethylaminoacetophenone, etc. class; thioxanthone, 2-ethyl thioxanthone, 2-isopropyl thioxanthone, 2,4-dimethyl thioxanthone, 2,4-diethyl thioxanthone, 2-chlorothioxanthone ketones, 2,4-diisopropyl thioxanthone and other thioxanthones; anthraquinone, chloranthraquinone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, Anthraquinones such as 1-chloroanthraquinone, 2-pentyl anthraquinone, 2-aminoanthraquinone, etc.; acetals such as acetophenone dimethyl acetal, benzyl dimethyl acetal, etc.; ethyl- 4-Dimethylaminobenzoate, 2-(bis Methylamino) ethyl benzoate, benzoic acid esters such as ethyl p-dimethylbenzoate; 1,2-octanedione, 1-[4-(phenylthio)-, 2-(O-benzyl oxime)], ethyl ketone, 1-[9-ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-, 1-( O-acetyloxime) and other oxime esters; bis(η5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl) Phenyl)titanium, bis(cyclopentadiene)-bis[2,6-difluoro-3-(2-(1-pyrrol-1-yl)ethyl)phenyl]titanium and other titanocenes; Phenyl disulfide 2-nitropyridine, Butyroin, p-dimethoxybenzoin (Anisoin) ether, azobisisobutyronitrile, tetramethylthiuram disulfide, etc. The photocuring agent component which can polymerize the said active energy ray curable component (B) by radical addition polymerization reaction may be used individually by 1 type, and may be used in combination of 2 or more types. [0065] In addition, the light hardener component is preferably selected from substances that are not easily evaporated or decomposed by heating. Specifically, the vapor pressure of the photocuring agent component at 25° C. is preferably 1×10 ^-3 Pa or less, more preferably 5×10 ^-4 Pa or less, and still more preferably 1×10 ^-4 Pa or less. Examples of the photohardening agent components whose vapor pressure at 25° C. is 1×10 ⁻⁴ Pa or less include Omnirad (Omnirad) 819 (manufactured by IGM Resins), IRGACURE 379, and IRGACURE OXE01 (manufactured by BASF JAPAN Co., Ltd.). In addition, the thermal decomposition temperature of the photohardener component is preferably 150°C or higher, more preferably 155°C or higher, and still more preferably 160°C or higher. By using a photocuring agent component with a relatively high thermal decomposition temperature, it is possible to effectively suppress the deactivation of the photocuring agent component during the thermal reaction of the packaging material for semiconductors. Such a light curing agent component includes, for example, Omnirad (Omnirad) 819 (manufactured by IGM Resins), IRGACURE 379, and IRGACURE OXE01 (manufactured by BASF JAPAN Co., Ltd.). Among these, the α-aminoacetophenones (hereinafter referred to as " α-aminoacetophenone-based photopolymerization initiator"), and acyl phosphorous oxides (hereinafter referred to as "acyl phosphorous oxide-based photopolymerization initiator") group of one or more photopolymerization initiators The starting agent is better. As the oxime ester-based photopolymerization initiator, commercially available products include CGI-325, IRGACURE OXE01, IRGACURE OXE02, manufactured by BASF JAPAN Co., Ltd., N-1919 manufactured by ADEKA Co., Ltd., and the like. In addition, the photopolymerization initiator having two oxime ester groups in the molecule is not easily evaporated or decomposed by heating, and can generate a plurality of radicals with higher reactivity, so that the warpage can be corrected more efficiently. more suitable for use. Specific examples of such a photopolymerization initiator include oxime ester compounds having a carbazole structure represented by the following general formula.

In above-mentioned formula, X represents hydrogen atom, the alkyl group of carbon number 1～17, the alkoxy group of carbon number 1～8, phenyl, phenyl (by the alkyl group of carbon number 1～17, carbon number 1 ~8 alkoxy groups, amine groups, alkylamino groups with 1~8 carbon atoms or dialkylamine groups substituted), naphthyl (substituted with 1~17 carbon atoms, 1~17 carbon atoms) 8 alkoxy group, amino group, alkylamino group with carbon number 1-8 alkyl group or dialkylamine group substituted), Y and Z each represent a hydrogen atom, an alkyl group with carbon number 1-17, carbon Alkoxy with 1 to 8, halogen, phenyl, phenyl (by alkyl with 1 to 17 carbons, alkoxy with 1 to 8 carbons, amine group, alkyl with 1 to 8 carbons Alkylamine group or dialkylamine group substituted), naphthyl (substituted by alkyl group of carbon number 1~17, alkoxy group of carbon number 1~8, amino group, alkyl group with carbon number 1~8 Alkylamino or dialkylamino substituted), anthryl, pyridyl, benzofuranyl, benzothienyl, Ar represents alkylene, vinylidene, phenylene with 1 to 10 carbon atoms base, biphenylene, pyridylene, naphthylene, thiophene , anthrylene, thienylene, furylene, 2,5-pyrrole-diyl, 4,4'-stilbene-diyl, 4,2'-styrene-diyl, n is an integer of 0 or 1. Above-mentioned general formula represents the oxime ester compound with carbazole structure, especially preferably in the formula, X, Y are each methyl or ethyl, Z is methyl or phenyl, n is 0, Ar is phenylene , oxime ester compounds of naphthylene, thiophene or thienylene groups. [0069] The compounding amount of the oxime ester-based photopolymerization initiator is relative to 100 parts by mass of the polyether compound containing an ethylenically unsaturated group in the molecule, preferably 0.01 to 5 parts by mass. α-aminoacetophenone-based photopolymerization initiator, specifically, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinoacetone- 1. 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 2-(dimethylamino)-2-[(4- Methylphenyl)methyl]-1-[4-(4-morpholinyl)phenyl]-1-butanone, N,N-dimethylaminoacetophenone, etc. Commercially available products include Omnirad (Omnirad) 907 manufactured by IGM Resins, Inc., IRGACURE 369 and IRGACURE 379 manufactured by BASF JAPAN Co., Ltd., and the like. The acyl phosphorous oxide-based photopolymerization initiator can be exemplified by the above-mentioned compounds. Commercially available products include IRGACURE TPO manufactured by BASF JAPAN Co., Ltd., Omnirad (Omnirad) 819 manufactured by IGM Resins, and the like. When an oxime ester-based photopolymerization initiator is used as a photohardener component, not only a small amount of the photopolymerization initiator can be obtained sufficient sensitivity, and the volatilization of the photopolymerization initiator is less, so the contamination of equipment such as drying ovens can be reduced. In addition, when using an acyl-based phosphorous oxide-based photopolymerization initiator, the deep sclerosis during photoreaction is improved, so even a thick semiconductor packaging material can exhibit more effective warpage correcting force, so it is relatively good. In addition, a commercial item can be used as a photohardener component, for example, IRGACURE 389 and IRGACURE 784 manufactured by BASF JAPAN Co., Ltd. can be suitably used. As described above, the active energy ray-curable component (B) uses a part of the hardening reaction of the active energy ray-curable component or a part of the hardening reaction of the active energy ray-curable component by the heat energy or the hardening reaction heat generated when the thermosetting component (A) is hardened. Not all of them are preferred. Therefore, it is also preferable that the photohardening agent component is substantially activated (radical generation) without generating heat of curing reaction by thermal energy. Examples of such photohardener components include oxime compounds such as IRGACURE 379, IRGACURE 784, IRGACURE OXE01, and Omnirad (Omnirad) 819 manufactured by IGM Resins, Inc., and oxime esters having a carbazole structure represented by the general formula above. compounds, etc. The compounding amount of the light curing agent component is relative to 100 parts by mass of the active energy ray curable component (B), preferably 1 to 25 parts by mass, more preferably 5 to 20 parts by mass, and more preferably 10 to 10 parts by mass 20 parts by mass. In particular, when an oxime ester-based photopolymerization initiator is used, the blending amount of the photopolymerization initiator is preferably 0.01 to 5 parts by mass relative to 100 parts by mass of the polyether compound containing an ethylenically unsaturated group in the molecule. [0077] When the package material for semiconductors of the present invention contains a photocuring agent component as a curing agent component, a photoinitiator or a sensitizer may be further contained. Examples of photoinitiator aids and sensitizers include benzoin compounds, acetophenone compounds, anthraquinone compounds, thioxanthone compounds, acetal compounds, benzophenone compounds, tertiary amine compounds, and xanthone compounds compounds, etc. A photoinitiator and a sensitizer may be used individually by 1 type, and may be used as a mixture of 2 or more types. Among the above, preferred are thioxanthone compounds and tertiary amine compounds. In particular, containing a thioxanthone compound is preferable in terms of the deep curability of the package material for semiconductors. Among them, the thioxanthone compounds including 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone, etc. are: good. The semiconductor packaging material of the present invention may be in any form of liquid, granular, ingot, or flake, but when processed into a film (or flake) shape, it may also contain a film (or flake). ) to easily maintain the shape and provide the polymer component (C) with film properties. The film property imparting polymer component (C) includes thermoplastic polyhydroxypolyether resins, phenoxy resins of condensates of epichlorohydrin and various bifunctional phenol compounds, or hydroxyether moieties present in the skeleton. The hydroxyl groups are phenoxy resins, polyvinyl acetal resins, polyamide resins, polyamide imide resins, block copolymers, etc., which are esterified with various acid anhydrides or acid chlorides. These polymers can be used alone or in combination of two or more. In order to maintain the shape of the film (or sheet), the weight average molecular weight (Mw) of these polymers is usually 2×10 ⁴ or more, preferably 2×10 ⁴ to 3×10 ⁶ . Also, in this specification, the value of the weight average molecular weight (Mw) can be measured by gel permeation chromatography (GPC) method (polystyrene standard) with the following measuring apparatus and measuring conditions. Measuring device: "Waters 2695" manufactured by Waters Detector: "Waters 2414" manufactured by Waters, RI (differential refractometer) Column: "HSPgel Column, HR MB-L, 3 μm, 6 mm × 150 mm" manufactured by Waters × 2 + Waters "HSPgel Column, HR1, 3μm, 6mm × 150mm" × 2 Measurement conditions: Column temperature: 40°C RI detector set temperature: 35°C Developing solvent: Tetrahydrofuran Flow rate: 0.5ml/min Sample volume: 10μl Sample concentration: 0.7wt % [0080] The polyvinyl acetal resin can be obtained, for example, by acetalizing polyvinyl alcohol resin with aldehyde. Although the said aldehyde is not specifically limited, For example, formaldehyde, acetaldehyde, propionaldehyde, butyraldehyde, etc. are mentioned. Specific examples of the phenoxy resin include FX280, FX293 manufactured by Nippon Steel & Sumitomo Metal Co., Ltd., YX8100, YL6954, and YL6974 manufactured by Mitsubishi Chemical Co., Ltd. Specific examples of polyvinyl acetal resins include S-LEC KS series manufactured by Sekisui Chemical Industry Co., Ltd., and polyamide resins include KS5000 series manufactured by Hitachi Chemical Co., Ltd., and BP series manufactured by Nippon Kayaku Co., Ltd. Wait. [0083] As the polyamide imide resin, the KS9000 series manufactured by Hitachi Chemical Co., Ltd., etc., can be mentioned. Thermoplastic polyhydroxy polyether resin, when having a skeleton, has a high glass transition temperature and is excellent in heat resistance, so it can maintain the low thermal expansion coefficient of semi-solid or solid epoxy resin, while maintaining the glass transition temperature, The obtained cured film was well-balanced with a low thermal expansion coefficient and a high glass transition temperature. In addition, since the thermoplastic polyhydroxypolyether resin has hydroxyl groups, it exhibits good adhesion to the pseudo wafer. [0085] The film property-imparting polymer component (C) may be obtained by block copolymerization of the monomers constituting the above-mentioned components. Block copolymers refer to copolymers in which two or more types of polymers with different properties are linked by covalent bonds with a molecular structure of long chains. The block copolymer is preferably an XYX type or XY-X' type block copolymer. Among the XYX type and XY-X' type block copolymers, the central Y is a soft block, and the glass transition temperature (Tg) is low, the two outer sides X or X' are hard blocks, and the glass transition temperature (Tg) ) is preferably composed of polymer units higher than the central Y block. Glass transition temperature (Tg) is measured by differential scanning calorimetry (DSC). In addition, in XYX type and XY-X' type block copolymer, X or X' series Tg is constituted by the polymer unit of 50 ℃ or more, and the glass transition temperature (Tg) of Y is X or X' The block copolymer formed by the polymer unit below Tg is more preferable. In addition, among the XYX type and XY-X' type block copolymers, X or X' is preferably the one with high compatibility with the thermosetting component (A) or the active energy ray-curable component (B), and Y is It is preferable that the compatibility with the thermosetting component (A) or the active energy ray hardening component (B) is low. In this way, the block copolymer in which the blocks at both ends and the matrix (hardening component) are compatible, and the block copolymer in which the central block and the matrix (hardening component) are incompatible, can more easily exhibit a special structure in the matrix. Among the above-mentioned various film property-imparting polymer components (C), phenoxy resins, polyvinyl acetal resins, thermoplastic polyhydroxypolyether resins having a perylene skeleton, and block copolymers are preferred. In the packaging material for semiconductor of the present invention, the situation of adding the film property to give the polymer component (C), in all components constituting the packaging material for semiconductor, the ratio of the film property to give the polymer component (C) is not particularly limited , when the total of all components is taken as 100 parts by mass, it is preferably 2 to 40 parts by mass, more preferably 5 to 35 parts by mass. [0089] In the packaging material for semiconductors of the present invention, the inorganic filler component (D) may be contained. By containing the inorganic filler component (D), for example, the cutting of FO-WLP into individual sheets (cutting) is facilitated. In addition, by applying laser marking to the protective film, the inorganic filler component (D) is exposed in the portion cut off by the laser light, and the reflected light is diffused, thereby exhibiting a color close to white. Thereby, when the warpage correcting material for FO-WLP contains the colorant component (E) described later, the contrast between the laser-printed portion and other portions is poor, and the printing (printing) becomes clear. The inorganic filler component (D) is to irradiate the packaging material for semiconductors after heat treatment at 150°C for 10 minutes without being exposed to active energy rays at 25°C, and irradiate at 25°C with ultraviolet rays containing a wavelength of 351 nm 1J/ When the calorific value α (J/g) at cm ² is in the range of 1≦α (J/g), conventionally known ones can be used without limitation, for example, silica, alumina, talc, aluminum hydroxide, Calcium Carbonate, Silica (Neuburger Kieselerde), Glass Powder, Clay, Magnesium Carbonate, Natural Mica, Synthetic Mica, Barium Sulfate, Barium Titanate, Hydrotalcite, Mineral Wool, Aluminum Silicate, Calcium Silicate, Powders of zinc powder, titanium oxide, iron oxide, silicon carbide, boron nitride, etc., spherical beads, single crystal fibers, glass fibers, etc., can be used alone or in combination of two or more. Among these, silica, alumina, and titania are preferred. [0091] The inorganic filler component (D) uses an average particle size, preferably 0.01 to 15 μm, more preferably 0.02 to 12 μm, and particularly preferably 0.03 to 10 μm. In addition, in this specification, an average particle diameter is the number-average particle diameter calculated as the arithmetic mean value of the long-axis diameter of 20 inorganic fillers (D) which were not chosen intentionally by electron microscope measurement. The content of the inorganic filler component (D) is when the curable components (A) and (B) contained in the packaging material for semiconductors and the hardener components of both and the film-imparting polymer component (C) When the total is 100 parts by mass, it is preferably 10 to 400 parts by mass, more preferably 20 to 350 parts by mass, and particularly preferably 30 to 300 parts by mass. When the content of the inorganic filler component (D) is within 400 parts by mass, the packaging material for semiconductors after heat treatment at 150° C. for 10 minutes in an environment not exposed to active energy rays is irradiated at 25° C. containing The calorific value α (J/g) at the time of 1 J/cm ² of ultraviolet rays with a wavelength of 351 nm is likely to be 1≦α (J/g), which is preferable. [0093] The packaging material for semiconductors of the present invention may contain a colorant component (E). By containing the colorant component (E), when a semiconductor chip with a package material for semiconductors is placed in a machine, malfunction of the semiconductor device due to infrared rays and the like generated by surrounding devices can be prevented. Moreover, when engraving on the package material for semiconductors by means such as laser printing, it becomes easy to recognize marks such as characters and symbols. That is, in the semiconductor wafer on which the packaging material for semiconductors is formed, on the surface of the protective film, the model number, etc. are usually printed by a laser printing method (a method of cutting the surface of the protective film with laser light and printing). The material contains a colorant, and the contrast between the part that is cut by the laser light and the part that is not cut in the protective film is sufficiently obtained, and the visibility is improved. As the colorant component (E), organic or inorganic pigments and dyes can be used alone or in combination of two or more, among them, black pigments are preferred from the viewpoint of electromagnetic wave or infrared shielding properties. For the black pigment, carbon black, perylene black, iron oxide, manganese dioxide, aniline black, activated carbon, etc. can be used, but it is not limited to these. From the viewpoint of preventing malfunction of the semiconductor device, carbon black is particularly preferred. In addition, instead of carbon black, it is possible to mix pigments or dyes such as red, blue, green, and yellow to form black or a black-based color close to black. The red colorant includes monoazo, disazo, azo lake, benzimidazolone, perylene, diketopyrrolopyrrole, condensed azo, anthraquinone, quinone The acridone type etc., specifically, the following ones are mentioned. Pigment Red 1, 2, 3, 4, 5, 6, 8, 9, 12, 14, 15, 16, 17, 21, 22, 23, 31, 32, 112, 114, 146, 147, 151, 170, 184, 187, 188, 193, 210, 245, 253, 258, 266, 267, 268, 269 and other monoazo red colorants, Pigment Red37, 38, 41 and other disazo red colorants, Pigment Red48:1, 48:2, 48:3, 48:4, 49:1, 49:2, 50:1, 52:1, 52:2, 53:1, 53:2, 57:1, 58: 4, 63: 1, 63: 2, 64: 1, 68 and other monoazo lake-based red colorants, Pigment Red171, Pigment Red175, Pigment Red176, Pigment Red185, Pigment Red208, etc. Benzimidazolone-based red coloring Pigment Red135, SolventRed179, Pigment Red123, Pigment Red149, Pigment Red166, Pigment Red178, Pigment Red179, Pigment Red190, Pigment Red194, Pigment Red224 and other perylene red colorants, Pigment Red254, Pigment Red255, Pigment Red264, Pigment Red270, Pigment Diketopyrrolopyrrole-based red colorants such as Red272, Condensed azo-based red colorants such as Pigment Red220, Pigment Red144, Pigment Red166, Pigment Red214, Pigment Red220, Pigment Red221, Pigment Red242, Pigment Red168, Pigment Red177, Pigment Anthraquinone-based red colorants such as Red216, SolventRed149, SolventRed150, SolventRed52, and SolventRed207, and quinacridone-based red colorants such as Pigment Red122, Pigment Red202, Pigment Red206, Pigment Red207, and Pigment Red209. The blue colorant includes phthalocyanine series, anthraquinone series, etc., and the pigment series is classified into a compound of pigment (Pigment), specifically, Pigment Blue15, Pigment Blue15:1, Pigment Blue15:2, Pigment Blue15 : 3, Pigment Blue15:4, Pigment Blue15:6, Pigment Blue16, Pigment Blue60, etc. As the dye system, Solvent Blue35, Solvent Blue63, Solvent Blue68, Solvent Blue70, Solvent Blue83, Solvent Blue87, Solvent Blue94, Solvent Blue97, Solvent Blue122, Solvent Blue136, Solvent Blue67, Solvent Blue70 and the like can be used. In addition to these, metal-substituted or unsubstituted phthalocyanine compounds can also be used. [0097] The green colorants also include phthalocyanine-based, anthraquinone-based, perylene-based and the like, and specifically, Pigment Green7, Pigment Green36, Solvent Green3, Solvent Green5, Solvent Green20, Solvent Green28, etc. can be used. In addition to the above, metal-substituted or unsubstituted phthalocyanine compounds can also be used. [0098] The yellow colorant includes monoazo, disazo, condensed azo, benzimidazolone, isoindolinone, anthraquinone, etc., and specifically, the following can be mentioned. Anthraquinone-based yellow colorants such as Solvent Yellow163, Pigment Yellow24, Pigment Yellow108, Pigment Yellow193, Pigment Yellow147, Pigment Yellow199, Pigment Yellow202, and isoindoles such as Pigment Yellow110, Pigment Yellow109, Pigment Yellow139, Pigment Yellow179, and Pigment Yellow185 can be used Linone-based yellow colorants, Pigment Yellow93, Pigment Yellow94, Pigment Yellow95, Pigment Yellow128, Pigment Yellow155, Pigment Yellow166, Pigment Yellow180, etc. Condensed azo-based yellow colorants, Pigment Yellow120, Pigment Yellow151, Pigment Yellow154, Pigment Yellow156, Pigment Benzimidazolone yellow colorants such as Yellow175, Pigment Yellow181, Pigment Yellow1, 2, 3, 4, 5, 6, 9, 10, 12, 61, 62, 62: 1, 65, 73, 74, 75, 97, 100, 104, 105, 111, 116, 167, 168, 169, 182, 183 and other monoazo yellow colorants, Pigment Yellow 12, 13, 14, 16, 17, 55, 63, 81, 83, 87, 126, 127, 152, 170, 172, 174, 176, 188, 198 and other disazo yellow colorants. [0099] Furthermore, for the purpose of adjusting the hue, colorants such as purple, orange, brown, black, etc. can also be added. Specific examples include Pigment Violet 19, 23, 29, 32, 36, 38, 42, Solvent Violet 13, 36, CI Pigment Orange 1, CI Pigment Orange 5, CI Pigment Orange 13, CI Pigment Orange 14, CI Pigment Orange 16 , CI Pigment Orange 17, CI Pigment Orange 24, CI Pigment Orange 34, CI Pigment Orange 36, CI Pigment Orange 38, CI Pigment Orange 40, CI Pigment Orange 43, CI Pigment Orange 46, CI Pigment Orange 49, CI Pigment Orange 51 , CI Pigment Orange 61, CI Pigment Orange 63, CI Pigment Orange 64, CI Pigment Orange 71, CI Pigment Orange 73, CI Pigment Brown 23, CI Pigment Brown 25, CI Pigment Black 1, CI Pigment Black 7, etc. Also, when the fan-out region of FO-WLP forms the situation of the through electrode, the fan-out region and the FO-WLP must be simultaneously laser processed with the warpage correction layer, so calibration (alignment) is used, the warpage correction layer It is also preferable to have light transmittance. Taking such circumstances into consideration, the colorant component (E) can be selected. The compounding amount of the colorant component (E) is excellent from the light transmittance to the deep part, and the result can obtain a better warpage correction layer, when the curability contained in the semiconductor packaging material of the semiconductor packaging material is When the total of components (A) and (B) and the hardener component of both and the film-imparting polymer component (C) is 100 parts by mass, it is preferably 0.1 to 35 parts by mass, more preferably 0.1 to 35 parts by mass. It is 0.5-25 mass parts, and the range of 1-15 mass parts is especially preferable. The semiconductor packaging material of the present invention, in order to improve at least one of the adhesiveness and adhesion to the semiconductor wafer, may also contain a coupling agent having a functional group that reacts with an inorganic substance and a functional group that reacts with an organic functional group. Ingredient (F). Moreover, by containing the coupling agent component (F), the water resistance can be improved without impairing the heat resistance of the packaging material for semiconductors. Such coupling agents include titanate-based coupling agents, aluminate-based coupling agents, silane coupling agents, and the like. Among these, a silane coupling agent is preferable. The organic group contained in the silane coupling agent, for example, vinyl group, epoxy group, styryl group, methacryloyloxy group, acryloxy group, amino group, urea group, chloropropyl group, mercapto group, Polysulfide group, isocyanate group, etc. A commercially available silane coupling agent can be used, for example, KA-1003, KBM-1003, KBE-1003, KBM-303, KBM-403, KBE-402, KBE-403, KBM-1403, KBM-502, KBM- 503, KBE-502, KBE-503, KBM-5103, KBM-602, KBM-603, KBE-603, KBM-903, KBE-903, KBE-9103, KBM-9103, KBM-573, KBM-575, KBM-6123, KBE-585, KBM-703, KBM-802, KBM-803, KBE-846, KBE-9007 (all trade names; manufactured by Shin-Etsu Chemical Co., Ltd.), etc. These may be used individually by 1 type, and may use 2 or more types together. [0104] In the packaging material for semiconductors of the present invention, in addition to the above-mentioned components, various additives can be formulated if necessary. Various additives such as flattening agents, plasticizers, oxidizing agents, antioxidants, ion trapping agents, gettering agents, chain transfer agents, release agents, antiseptics, adhesion promoters, ultraviolet absorbers, thermal polymerization inhibitors, In the field of electronic materials, adhesives, defoaming agents, etc. may also contain conventional additives. [0105] The packaging material for semiconductors of the present invention may contain an organic solvent. The organic solvent can be used to adjust the viscosity when synthesizing a polyether compound containing an ethylenically unsaturated group in the molecule, mixing each component, and coating the obtained semiconductor packaging material on a substrate or a support film. [0106] The organic solvent includes ketones, aromatic hydrocarbons, glycol ethers, glycol ether acetates, esters, alcohols, aliphatic hydrocarbons, petroleum-based solvents, and the like. Specifically, ketones such as methyl ethyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, cellosolve, methyl cellosolve, and butyl solvent can be listed. Fiber, carbitol, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether and other glycol ethers, ethyl acetate Esters, butyl acetate, dipropylene glycol methyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol butyl ether acetate, etc., ethanol, propanol, ethylene glycol, propylene glycol, etc. Alcohols, aliphatic hydrocarbons such as octane and decane, petroleum-based solvents such as petroleum ether, naphtha, hydrogenated naphtha, solvent naphtha, etc. The organic solvent may be used alone or in combination of two or more. [0108] When the semiconductor packaging material of the present invention is in the shape of a film (or a sheet), its thickness is not particularly limited, but is preferably 3 to 500 μm, more preferably 5 to 450 μm, and particularly preferably 7 to 400 μm. The semiconductor packaging material of the present invention comprises the cyclic ether compound containing as thermosetting component (A), and has more than 1 ethylenically unsaturated as active energy ray sclerosing component (B) in the molecule In the case of a base compound, since it has initial adhesion, it can be easily bonded by pressing against a pseudo wafer or a chip in an uncured state. Moreover, at the time of pressing, any means of heating and pressurization can be applied to the packaging material for semiconductors. Then, through different curing reactions, a cured film (warpage correcting layer) with high adhesion and warpage correcting power can be finally formed. The cured film (warpage correction layer) formed using the packaging material for semiconductors of the present invention is also excellent in adhesive strength, and can maintain a sufficient protective function even under severe conditions of high temperature and high humidity. Moreover, the warpage correction layer obtained by hardening the packaging material for semiconductors may have a single-layer structure or a multilayer structure. [0110] The packaging material for semiconductors of the present invention can be used in a dry thin film form, or can be used in a liquid state as it is. When used in a liquid state, it may be one liquid or two or more liquids. During dry film formation, dilute the packaging material for semiconductor with organic solvent, adjust to appropriate viscosity, use notch wheel coater, blade coater, lip die coater, rod coater, extrusion coater Cloth machine, reverse roll coater, transfer roll coater, gravure coater, spray coater, etc., coat the support film to a uniform thickness, usually dry at a temperature of 50~130 ° C for 1~30 minutes, the film can be obtained. The thickness of the coating film is not particularly limited. From the viewpoint of obtaining a semiconductor packaging material with better warpage correction ability, the film thickness of the dry film after drying is generally 5 to 150 μm, preferably 10 to 60 μm. The range is suitable for selection. [0113] As the support film, conventionally known ones such as a release paper (separate paper), a release film, a table paper, a release film, a release paper, etc. can be suitably used. In addition, polyester films such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyolefin films such as stretch polypropylene films (OPP), and polyimide films can also be used. One or both sides of the base material for mold release paper made of plastic films such as films form a mold release layer. The mold release layer is not particularly limited as long as it is a material having mold release properties, and examples thereof include silicone resins, organic resin-modified silicone resins, and fluororesins. [0114] The thickness of the support film is not particularly limited, and is generally appropriately selected within the range of 10 to 150 μm. [0115] After the packaging material for semiconductors is formed into a film on the support film, a peelable cover film may be laminated on the surface of the film for the purpose of preventing dust from adhering to the surface of the film. As a peelable cover film, for example, polyethylene film, polytetrafluoroethylene film, polypropylene film, surface-treated paper and the like can be used. Considering the peeling of the cover film, the adhesion force between the film and the cover film is smaller than the adhesion force between the film and the support film.

The semiconductor packaging material of the present invention, for example, is adjusted to a viscosity suitable for the coating method with an organic solvent, on the substrate by dip coating method, flow coating method, roll coating method, coating bar method, screen plate Coating by methods such as printing method and curtain coating method can form a film shape by volatilizing and drying (temporarily drying) the organic solvent contained in the composition at a temperature of about 60 to 100°C.

The volatilization drying performed after coating the packaging material for semiconductors of the present invention uses a hot air circulation drying furnace, an IR furnace, a hot plate, a convection oven, etc. The method of hot air countercurrent contact and the method of spraying the support through a nozzle) are carried out.

When the packaging material for semiconductors is in the form of a film, it may be in the form of a laminated film including at least two or more layers containing the above-mentioned components. In the case of a laminated film, it is preferable that the composition of the packaging material for semiconductors constituting each layer is different from each other. In particular, each layer is irradiated with active energy rays by changing the type or mixing ratio of the active energy ray-curable component (B), and/or the type or mixing amount of the curing agent component of the active energy ray-curable component (B). , the hardening shrinkage of the surface and the back can be controlled in a wider range. For example, the warpage direction or warpage amount of a pseudo wafer when using a conventional semiconductor packaging material is known in advance, and the active energy ray curable component of each layer of the laminated film is adjusted according to the warpage direction or warpage amount The kind or blending ratio of (B), or the kind or blending amount of the hardener component, can exhibit a desired warpage correcting force.

When the packaging material for semiconductors is in the form of a laminated film as described above, at least one layer, preferably all layers constituting the packaging material for semiconductors, will be heated at 150°C in an environment not exposed to active energy rays The calorific value when 1 J/cm ² of ultraviolet rays containing a wavelength of 351 nm is irradiated at 25° C. of the package material for semiconductors after the treatment for 10 minutes is preferably 1 J/g or more. The curing shrinkage of the active energy ray curable component contained in the package material for semiconductors on the side irradiated with the active energy ray is accelerated, and the state of warpage can be changed.

In this way, according to the packaging material for semiconductors of the present invention, the thermosetting component (A) is cured by heat, and after molding (pre-molding), active energy rays are irradiated on one or both surfaces of the pseudo-wafer. Correction can be performed in consideration of the direction or amount of warpage. The packaging material for semiconductors of the present invention, in particular, is in contact with the periphery or a part of the semiconductor wafer to form the area of the packaging material for semiconductors, and the area used for the packaging material for semiconductors is also provided with the fan-out of the rewiring layer connected to the electrodes. type of wafer-level packaging for warpage-free wafer-level packaging.

[Example]

The present invention will be described below with reference to examples, but the present invention is not limited to these examples. In addition, unless otherwise stated, "parts" and "%" represent parts by mass. In addition, the manufacture of the package material for semiconductors and the measurement after that, unless otherwise stated, were performed in the environment which did not expose to an active energy ray.

<Preparation of resin solution (Re1)>

[0126] 將保護膜形成封裝材料用組成溶液1a塗佈於在表面施予剝離處理的聚對苯二甲酸乙二酯薄膜(PET薄膜)，以100℃使乾燥10分鐘，製作厚度50μm之半導體用封裝材1a。 　　[0127] 接著，使以下成分於甲基乙基酮中溶解･分散，調製固體成分質量濃度20%的封裝材料用組成溶液1b。

[0128] 將保護膜形成封裝材料用組成溶液1b塗佈於在表面施予剝離處理的聚對苯二甲酸乙二酯薄膜(PET薄膜)，以100℃使乾燥10分鐘，製作厚度50μm之半導體用封裝材1b。 　　[0129] 使用輥層合機(Roll laminator)黏貼2張半導體用封裝材薄片1a，將施予剝離處理之PET薄膜之單側1張剝離，在於剝離的面黏貼半導體用封裝材薄片1a，製作層合了3張半導體用封裝材薄片1a的薄片。又，使用半導體用封裝材薄片1b，進行同樣的步驟，製作層合了3張半導體用封裝材薄片1b的薄片。 　　[0130] 其次，由層合了3張半導體用封裝材薄片1a的薄片，將施予了剝離處理之PET薄膜的單側1張剝離，也由層合了3張半導體用封裝材薄片1b的薄片，將施予了剝離處理之PET薄膜的單側1張剝離，貼合半導體用封裝材薄片1a與半導體用封裝材薄片1b，製作3張半導體用封裝材薄片1a與3張半導體用封裝材薄片1b依序層合之合計厚度300μm的半導體用封裝材1。 　　[0131] ＜半導體用封裝材2之製作＞ 　　調配以下的成分，使用輥捏合機於70℃下加熱4分鐘，接著於100℃下加熱6分鐘，合計10分鐘，邊減壓(0.01kg/cm² )邊進行熔融混練製作混練物2。

[0132] 將製得之混練物2以2片50μm之覆蓋薄膜(帝人purex薄膜)挾住來配置，藉由平板壓製法使混練物形成薄片狀，得到厚度300μm之薄片狀的半導體用封裝材2。 　　[0133] ＜半導體用封裝材3之製作＞ 　　調配以下的成分，使用輥捏合機於70℃下加熱4分鐘，接著於100℃下加熱6分鐘，合計10分鐘，邊減壓(0.01kg/cm² )邊進行熔融混練製作混練物3。

[0134] 將製得之混練物3以2片50μm之PET薄膜(帝人purex薄膜)挾住來配置，藉由平板壓製法使混練物形成薄片狀，得到厚度300μm之薄片狀的半導體用封裝材3。 　　[0135] ＜半導體用封裝材4之製作＞ 　　調配以下的成分，使用輥捏合機於70℃下加熱4分鐘，接著於100℃下加熱6分鐘，合計10分鐘，邊減壓(0.01kg/cm² )邊進行熔融混練製作混練物4。

[0136] 將製得之混練物4以2片50μm之覆蓋薄膜(帝人purex薄膜)挾住來配置，藉由平板壓製法使混練物形成薄片狀，得到厚度300μm之薄片狀的半導體用封裝材4。 　　[0137] ＜半導體用封裝材5之製作＞ 　　調配以下的成分，使用輥捏合機於70℃下加熱4分鐘，接著於100℃下加熱6分鐘，合計10分鐘，邊減壓(0.01kg/cm² )邊進行熔融混練製作混練物5。

[0138] 將製得之混練物5以2片50μm之覆蓋薄膜(帝人purex薄膜)挾住來配置，藉由平板壓製法使混練物形成薄片狀，得到厚度300μm之薄片狀的半導體用封裝材5。 　　[0139] ＜半導體用封裝材6之製作＞ 　　除了未使用丙烯酸酯與光自由基聚合起始劑外，與半導體用封裝材1同樣操作，製作厚度300μm的半導體用封裝材6。 　　[0140] ＜半導體用封裝材7之製作＞ 　　除了未使用丙烯酸酯與光自由基聚合起始劑外，與半導體用封裝材2同樣操作，製作厚度300μm的半導體用封裝材7。 　　[0141] ＜半導體用封裝材8之製作＞ 　　除了未使用丙烯酸酯與光自由基聚合起始劑外，與半導體用封裝材3同樣操作，製作厚度300μm的半導體用封裝材8。 　　[0142] ＜半導體用封裝材9之製作＞ 　　除了未使用丙烯酸酯與光自由基聚合起始劑外，與半導體用封裝材4同樣操作，製作厚度300μm的半導體用封裝材9。 　　[0143] ＜半導體用封裝材10之製作＞ 　　除了未使用丙烯酸酯與光自由基聚合起始劑外，與半導體用封裝材5同樣操作，製作厚度300μm的半導體用封裝材10。 　　[0144] ＜半導體用封裝材之加熱時的反應熱量測量＞ 　　關於如上述製得之半導體用封裝材1~10，為了測量在未暴露於活性能量線的環境下之加熱時的反應熱量，而進行DSC測量。使用DSC測量裝置(TA INSTRUMENT公司製 DSC Q100)，並於氮氣環境下使用鋁樣品盤測量反應熱量。 　　[0145] ＜半導體用封裝材之加熱時之反應熱確認＞ 　　將半導體用封裝材1~10置入DSC裝置中，測量以10℃/分鐘，由25℃至230℃昇溫時的反應熱量β。結果確認任一的半導體用封裝材，均產生1J/g以上的反應熱量。 　　[0146] ＜半導體用封裝材之加熱後藉由再加熱之反應熱確認＞ 　　又，將半導體用封裝材1~10置入DSC裝置中，以10℃/分鐘，由25℃至150℃昇溫，於150℃下保持10分鐘，接著以10℃/分鐘降溫，回復至25℃，再以10℃/分鐘由25℃至230℃昇溫，測量此時之反應熱量γ。結果確認任一的半導體用封裝材，均產生1J/g以上的反應熱量。 　　[0147] ＜半導體用封裝材之翹曲之變化之測量＞ 　　半導體用封裝材係成形為50mm×50mm四方、厚度300μm的薄片狀，製作進一步其兩面分別以1mm厚度的SUS板挾住的層合物。將此層合物載置於加熱板上，以10℃/分鐘昇溫，再以150℃加熱10分鐘，使熱硬化性成分反應。除去SUS板與PET薄膜，將製得之50mm×50mm四方、厚度300μm之熱硬化後的薄片狀封裝材載置於平板上，確認無角之翻轉(retroflexion)。 　　[0148] 對於熱硬化後之薄片狀封裝材的單面，於25℃的環境下使用高壓水銀燈，照射1J/cm² 之活性能量線，觀察薄片狀封裝材有無翹曲變形。此時，半導體用封裝材1與6，對於半導體用封裝材薄片1a面與半導體用封裝材薄片6a面照射活性能量線。經照射活性能量線的面產生收縮，變形成凹狀的情形，以金屬尺測量四邊的翹曲。4處翹曲之值之合計為4mm以上的情形時，判定為合格(Good)，8mm以上的情形時，判定為合格(Very good)，未達4mm的情形時，判定為不合格(Bad)。結果如表1、2所示。 　　[0149] ＜半導體用封裝材之活性光線照射時之反應熱量α之測量＞ 　　如上述，以150℃加熱10分鐘，使熱硬化性成分反應，準備熱硬化後的薄片狀半導體用封裝材，以Photo-DSC測量活性能量線照射時之反應熱量α(J/g)。Photo-DSC係使用以下條件測量。 　　･Photo-DSC裝置：使用TA INSTRUMENT公司製 DSC Q100與光源裝置Qseries PCA之組合，於25℃、氮氣環境下使用鋁樣品盤測量 　　･光源：高壓水銀燈(無波長濾光片) 　　･照度：3.7W/cm² 使用雙光導管(Dual Light Guides)，通過將由此照度衰減至1%的濾光片，對樣品進行光照射 　　･積算光量計：使用ORC公司 UV-351，確認波長351nm之積算光量成為1J/cm² 的照射時間，設定Photo-DSC之照射時間。 　　活性能量線照射時之反應熱(J/g)的結果如表1及2所示。 　　[0150]

[0151]

[0152] 如表1所示，對於150℃下加熱10分鐘之熱硬化後的薄片狀封裝材，照射活性能量線時，顯示活性能量線照射時之反應熱量α(J/g)為1J/g以上的實施例1~5係因薄片狀封裝材的單面照射活性能量線，可確認均為4mm以上的翹曲變化。而如表2所示，對於150℃下加熱10分鐘之熱硬化後的薄片狀封裝材，照射活性能量線時，顯示活性能量線照射時之反應熱量α(J/g)為未達1J/g的比較例1~5係因即使薄片狀封裝材的單面照射活性能量線，也無法可確認4mm以上的翹曲變化。In a pressure cooker equipped with a thermometer, a nitrogen introduction device, an epoxide introduction device, and a stirring device, 119.4 parts of novolak-type soluble phenolic resin (manufactured by Showa Denko Co., Ltd., Shonol CRG951, OH equivalent: 119.4) and 1.19 parts of potassium hydroxide were placed parts and 119.4 parts of toluene, the inside of the system was substituted with nitrogen while stirring, and then the temperature was heated up. Next, 63.8 g of propylene oxide was gradually added dropwise, and the reaction was carried out at 125 to 132° C. and 0 to 4.8 kg/cm ² for 16 hours. Then, it was cooled to room temperature, 1.56 parts of 89% phosphoric acid was added and mixed with this reaction solution, and potassium hydroxide was neutralized to obtain a novolak-type resole resin with a nonvolatile content of 62.1% and a hydroxyl value of 182.2 g/eq. propylene oxide reaction solution. This is the addition of an average of 1.08 moles of epoxide per equivalent of the phenolic hydroxyl group. 293.0 parts of epoxide reaction solutions of the obtained novolak-type phenolic resin, 43.2 parts of acrylic acid, 11.53 parts of methanesulfonic acid, 0.18 parts of methylhydroquinone, and 252.9 parts of toluene were charged into a device equipped with a stirrer and a thermometer. The reaction was carried out at 110° C. for 12 hours while blowing air at a rate of 10 ml/min into a reactor with an air blowing tube. 12.6 parts of water were distilled off by means of an azeotrope of the water system and toluene produced by the reaction. Then, it cooled to room temperature, the obtained reaction solution was neutralized with 35.35 parts of 15% sodium hydroxide aqueous solution, and it wash|cleaned with water. Then, toluene was substituted with 118.1 parts of diethylene glycol monoethyl ether acetate (carbitol acetate) while distilling off using an evaporator to obtain a novolak-type acrylate resin solution. Next, 332.5 parts of the obtained novolak-type acrylate resin solution and 1.22 parts of triphenylphosphine were loaded into the reactor equipped with a stirrer, a thermometer and an air blowing pipe, and the air was 10 ml/min. Blow in at a speed, slowly add 60.8 parts of tetrahydrophthalic anhydride while stirring, and react at 95 to 101° C. for 6 hours. After cooling, the acid value of the solid matter is 88 mgKOH/g and the solid content is 70.9%. Acryloyl polyether compound solution: resin solution (Re1). <Preparation of Package Material 1 for Semiconductors> The following components were dissolved and dispersed in methyl ethyl ketone to prepare a composition solution 1a for a package material with a solid content mass concentration of 20%.

The composition solution 1a for the protective film-forming encapsulating material was applied to a polyethylene terephthalate film (PET film) having a peeling treatment applied to the surface, and dried at 100° C. for 10 minutes to prepare a semiconductor with a thickness of 50 μm. Use packaging material 1a. Next, the following components were dissolved and dispersed in methyl ethyl ketone to prepare a composition solution 1b for sealing materials with a solid content mass concentration of 20%.

The composition solution 1b for the protective film-forming encapsulating material was applied to a polyethylene terephthalate film (PET film) whose surface was subjected to peeling treatment, and dried at 100° C. for 10 minutes to prepare a semiconductor with a thickness of 50 μm. Use packaging material 1b. Using a roll laminator (Roll laminator), two sheets of packaging material sheet 1a for semiconductors were pasted, and one side of the PET film subjected to the peeling treatment was peeled off, and the sheet of semiconductor packaging material 1a was pasted on the peeled surface to prepare Three sheets of the semiconductor packaging material sheet 1a are laminated. Moreover, the same procedure was performed using the sealing material sheet 1b for semiconductors, and the sheet|seat which laminated|stacked three sheets of the sealing material sheet 1b for semiconductors was produced. Next, from the sheet in which three semiconductor packaging material sheets 1a were laminated, one side of the PET film to which the peeling treatment was applied was peeled off, and the three semiconductor packaging material sheets 1b were laminated. For the sheet, peel off one side of the PET film that has been subjected to the peeling treatment, and laminate the semiconductor packaging material sheet 1a and the semiconductor packaging material sheet 1b to produce three semiconductor packaging material sheets 1a and three semiconductor packaging material sheets The packaging material 1 for semiconductors with a total thickness of 300 μm in which the sheets 1b are sequentially laminated. <Preparation of semiconductor packaging material 2> The following components were prepared, heated at 70° C. for 4 minutes using a roll kneader, and then heated at 100° C. for 6 minutes, for a total of 10 minutes, while reducing the pressure (0.01 kg/cm ² ) A kneaded product 2 is produced while performing melt-kneading.

The kneaded material 2 obtained is configured with the cover film (Teijin purex film) of 2 sheets of 50 μm sandwiched, and the kneaded material is formed into a sheet shape by the plate pressing method to obtain a sheet-like semiconductor packaging material of thickness 300 μm 2. <Preparation of semiconductor packaging material 3> The following components were prepared, heated at 70° C. for 4 minutes using a roll kneader, then heated at 100° C. for 6 minutes, for a total of 10 minutes, while reducing the pressure (0.01 kg/cm ² ) A kneaded product 3 is produced while performing melt-kneading.

The obtained kneaded product 3 is configured with two 50 μm PET films (Teijin purex film) sandwiched, and the kneaded product is formed into a sheet shape by the plate pressing method to obtain a sheet-like semiconductor packaging material with a thickness of 300 μm. 3. <Preparation of semiconductor packaging material 4> The following components were prepared and heated at 70° C. for 4 minutes using a roll kneader, followed by heating at 100° C. for 6 minutes, for a total of 10 minutes, while reducing the pressure (0.01 kg/cm ² ) A kneaded product 4 is produced while performing melt-kneading.

The kneaded material 4 obtained is configured with two cover films (Teijin purex films) of 50 μm, and the kneaded material is formed into a sheet by the plate pressing method to obtain a sheet-like packaging material for semiconductors with a thickness of 300 μm. 4. <Preparation of semiconductor packaging material 5> The following components were prepared and heated at 70° C. for 4 minutes using a roll kneader, followed by heating at 100° C. for 6 minutes, for a total of 10 minutes, while reducing the pressure (0.01 kg/cm ² ) A kneaded product 5 is produced while performing melt-kneading.

The kneaded material 5 obtained is configured with the cover film (Teijin purex film) of 2 sheets of 50 μm, and the kneaded material is formed into a sheet by the plate pressing method to obtain a sheet-like semiconductor packaging material of thickness 300 μm. 5. [0139] <Preparation of Package Material 6 for Semiconductors> The package material for semiconductors 6 having a thickness of 300 μm was produced in the same manner as the package material for semiconductors 1 except that the acrylate and the photo-radical polymerization initiator were not used. [0140] <Preparation of Package Material 7 for Semiconductors> A package material for semiconductors 7 having a thickness of 300 μm was produced in the same manner as the package material for semiconductors 2 except that acrylate and a photo-radical polymerization initiator were not used. [0141] <Preparation of Package Material 8 for Semiconductors> The package material 8 for semiconductors with a thickness of 300 μm was produced in the same manner as the package material for semiconductors 3 except that the acrylate and the photo-radical polymerization initiator were not used. [0142] <Preparation of Package Material 9 for Semiconductors> The package material 9 for semiconductors with a thickness of 300 μm was produced in the same manner as the package material for semiconductors 4 except that acrylate and a photo-radical polymerization initiator were not used. [0143] <Preparation of the semiconductor package 10> The semiconductor package 10 having a thickness of 300 μm was produced in the same manner as the semiconductor package 5 except that the acrylate and the photo-radical polymerization initiator were not used. <Measurement of heat of reaction during heating of semiconductor packaging materials> Regarding the semiconductor packaging materials 1 to 10 obtained as described above, in order to measure the heat of reaction during heating in an environment not exposed to active energy rays, DSC measurements were performed. The heat of reaction was measured using a DSC measuring device (DSC Q100 manufactured by TA INSTRUMENT) under a nitrogen atmosphere using an aluminum sample pan. <Confirmation of heat of reaction during heating of semiconductor packaging materials> The semiconductor packaging materials 1 to 10 were placed in a DSC apparatus, and the heat of reaction β when the temperature was raised from 25°C to 230°C at 10°C/min was measured. As a result, it was confirmed that the heat of reaction of 1 J/g or more was generated in any of the packaging materials for semiconductors. <Confirmation of heat of reaction by reheating after heating of semiconductor packaging materials> Further, the semiconductor packaging materials 1 to 10 were placed in a DSC apparatus, and the temperature was increased from 25°C to 150°C at 10°C/min. Hold at 150°C for 10 minutes, then decrease the temperature at 10°C/min, return to 25°C, and then increase the temperature from 25°C to 230°C at 10°C/min, and measure the reaction heat γ at this time. As a result, it was confirmed that the heat of reaction of 1 J/g or more was generated in any of the packaging materials for semiconductors. <Measurement of warpage change of packaging material for semiconductor> The packaging material for semiconductor was molded into a sheet shape of 50 mm×50 mm square and 300 μm in thickness, and a laminate in which both sides were sandwiched by SUS plates with a thickness of 1 mm was prepared. thing. This laminate was placed on a hot plate, heated at 10° C./min, and further heated at 150° C. for 10 minutes to react the thermosetting components. The SUS plate and the PET film were removed, and the resulting thermally cured sheet-like package of 50 mm×50 mm square and 300 μm in thickness was placed on a flat plate, and retroflexion without corners was confirmed. [0148] For one side of the sheet-like package after thermal curing, use a high-pressure mercury lamp in an environment of 25° C. to irradiate 1 J/cm ² of active energy rays to observe whether the sheet-like package has warpage deformation. At this time, the packaging materials 1 and 6 for semiconductors are irradiated with active energy rays to the surface of the packaging material sheet 1a for a semiconductor and the surface of the packaging material sheet 6a for a semiconductor. When the surface irradiated with the active energy ray was shrunk and deformed into a concave shape, the warpage of the four sides was measured with a metal ruler. When the total warpage value of the four places is 4mm or more, it is judged as good (Good), when it is more than 8mm, it is judged as good (Very good), and when it is less than 4mm, it is judged as bad (Bad). . The results are shown in Tables 1 and 2. <Measurement of heat of reaction α when irradiating the packaging material for semiconductors with actinic light> As described above, heating at 150° C. for 10 minutes to make the thermosetting components react to prepare the packaging material for sheet-like semiconductors after thermosetting, with Photo-DSC measures reaction heat α (J/g) upon active energy ray irradiation. Photo-DSC is measured using the following conditions. ･Photo-DSC device: Using a combination of DSC Q100 manufactured by TA INSTRUMENT and light source device Qseries PCA, measured at 25°C using an aluminum sample pan under nitrogen atmosphere ･Light source: High pressure mercury lamp (without wavelength filter) ･Illuminance: 3.7W / ^cm2 Using dual light guides (Dual Light Guides), through a filter that attenuates the illuminance to 1%, the sample is irradiated with light. Accumulated light meter: Use ORC company UV-351, confirm that the accumulated light intensity of wavelength 351nm becomes The irradiation time of 1J/cm ² is used to set the irradiation time of Photo-DSC. The results of the heat of reaction (J/g) during active energy ray irradiation are shown in Tables 1 and 2. [0150]

[0151]

As shown in Table 1, the heat of reaction α (J/g) when irradiated with active energy rays was shown to be 1 J/g for the sheet-like packaging material after thermal curing by heating at 150° C. for 10 minutes. In Examples 1 to 5 above g, the single side of the sheet-like package was irradiated with active energy rays, and it was confirmed that all of the warpage changes of 4 mm or more were observed. On the other hand, as shown in Table 2, the heat-of-reaction α (J/g) when irradiated with active energy rays was less than 1 J/g for the sheet-like package after thermal curing by heating at 150° C. for 10 minutes. In Comparative Examples 1 to 5 of g, even if the single side of the sheet-like package was irradiated with active energy rays, a change in warpage of 4 mm or more could not be confirmed.

Claims (6)

A method for manufacturing a fan-out wafer-level package, comprising the steps of: a packaging material for semiconductors containing at least a thermosetting component (A) and an active energy ray hardening component (B), and when not exposed to active The calorific value α (J/g) when the package material for semiconductors after heat treatment at 150°C for 10 minutes under the environment of energy rays and irradiated at 25°C with 1 J/cm ² of ultraviolet rays with a wavelength of 351 nm is 1≦α The semiconductor packaging material preparation step of (J/g), the semiconductor packaging material is heated, and the thermosetting component (A) in the semiconductor packaging material undergoes a thermosetting reaction, but is in a state of incomplete thermosetting, forming a fan The step of extruding the pseudo-wafer of the wafer-level package, and irradiating the semiconductor packaging material of the pseudo-wafer with active energy rays to promote the curing of the active energy ray hardening component (B) in the semiconductor packaging material Shrinkage, through hardening shrinkage, causes stress to act, so as to eliminate the warpage stress existing in the aforementioned pseudo-wafer and correct the warpage. The method for manufacturing a fan-out wafer-level package as claimed in claim 1, wherein the package material for semiconductor is subjected to a differential scanning calorimeter (DSC) temperature of 10° C. in an environment where the package material for semiconductor is not exposed to active energy rays. The calorific value β(J/g) when the temperature is raised from 25°C to 230°C per minute is 1≦β(J/g). The method for manufacturing a fan-out wafer-level package as claimed in claim 1 or 2, wherein the semiconductor packaging material is not exposed to active energy rays in an environment When the package material for semiconductors after heat treatment at 150°C for 10 minutes is heated from 25°C to 230°C by a differential scanning calorimeter (DSC) at a rate of 10°C/min without exposure to active energy rays The calorific value γ(J/g) is 1≦γ(J/g). The method for manufacturing a fan-out wafer-level package according to claim 1 or 2, wherein the semiconductor packaging material is in any form of liquid, granular, ingot or flake. According to the manufacturing method of the fan-out type wafer level package of claim 1 or 2, the semiconductor packaging material is a sheet-like semiconductor packaging material laminated with two or more layers, and the material composition of each layer is different from each other. The manufacturing method of the fan-out type wafer level package as claimed in claim 1 or 2, wherein the semiconductor package material is in contact with the outer periphery or a part of the region of the semiconductor chip to form the region of the semiconductor package material.