TWI767481B - 光敏樹脂組成物以及使用其的乾膜式光阻、光敏元件、電路板與顯示裝置 - Google Patents

光敏樹脂組成物以及使用其的乾膜式光阻、光敏元件、電路板與顯示裝置 Download PDF

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TWI767481B
TWI767481B TW109146583A TW109146583A TWI767481B TW I767481 B TWI767481 B TW I767481B TW 109146583 A TW109146583 A TW 109146583A TW 109146583 A TW109146583 A TW 109146583A TW I767481 B TWI767481 B TW I767481B
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Taiwan
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photosensitive resin
chemical formula
repeating unit
resin layer
unit represented
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TW109146583A
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English (en)
Chinese (zh)
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TW202132360A (zh
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金聳炫
奉東勳
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南韓商可隆工業股份有限公司
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Priority claimed from KR1020200098836A external-priority patent/KR102242552B1/ko
Priority claimed from KR1020200098835A external-priority patent/KR102242551B1/ko
Application filed by 南韓商可隆工業股份有限公司 filed Critical 南韓商可隆工業股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F220/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
    • C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
    • C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW109146583A 2019-12-31 2020-12-29 光敏樹脂組成物以及使用其的乾膜式光阻、光敏元件、電路板與顯示裝置 TWI767481B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR20190179685 2019-12-31
KR10-2019-0179686 2019-12-31
KR10-2019-0179685 2019-12-31
KR20190179686 2019-12-31
KR10-2020-0098836 2020-08-06
KR10-2020-0098835 2020-08-06
KR1020200098836A KR102242552B1 (ko) 2019-12-31 2020-08-06 감광성 수지 조성물 및 이를 이용한 드라이 필름 포토레지스트, 감광성 엘리먼트, 회로기판, 및 디스플레이 장치
KR1020200098835A KR102242551B1 (ko) 2019-12-31 2020-08-06 감광성 수지 조성물 및 이를 이용한 드라이 필름 포토레지스트, 감광성 엘리먼트, 회로기판, 및 디스플레이 장치

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Publication Number Publication Date
TW202132360A TW202132360A (zh) 2021-09-01
TWI767481B true TWI767481B (zh) 2022-06-11

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JP (2) JP7376723B2 (ja)
CN (1) CN114787711A (ja)
TW (1) TWI767481B (ja)
WO (1) WO2021137545A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11316456A (ja) * 1998-02-17 1999-11-16 Toppan Printing Co Ltd 無溶剤型感光性焼成ペ―スト組成物及び溶剤型感光性焼成ペ―スト組成物および構造体
JP2017167394A (ja) * 2016-03-17 2017-09-21 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターン付き基板の製造方法、及びプリント配線板の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428399B2 (ja) * 2001-03-29 2010-03-10 日立化成工業株式会社 プリント配線板の製造に用いる感光性樹脂組成物
JP2004004546A (ja) * 2003-02-03 2004-01-08 Hitachi Chem Co Ltd 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法
KR20050106645A (ko) * 2004-05-06 2005-11-11 주식회사 코오롱 감광성 수지조성물
JP2006227206A (ja) * 2005-02-16 2006-08-31 Hitachi Chem Co Ltd 感光性エレメント、これを用いたレジストパターンの形成方法及びプリント配線板の製造方法
JP2007286477A (ja) * 2006-04-19 2007-11-01 Hitachi Chem Co Ltd 感光性樹脂組成物、これを用いた感光性エレメント及びプリント配線板の製造方法
JP2008164886A (ja) * 2006-12-28 2008-07-17 Sumitomo Chemical Co Ltd 着色感光性樹脂組成物
JP5151446B2 (ja) * 2007-07-18 2013-02-27 日立化成工業株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2009198685A (ja) * 2008-02-20 2009-09-03 Fujifilm Corp 感光性組成物、及び感光性フィルム
JP2013037272A (ja) * 2011-08-10 2013-02-21 Mitsubishi Paper Mills Ltd 感光性樹脂組成物及び感光性フィルム
CN105393171B (zh) * 2013-07-23 2019-11-26 日立化成株式会社 投影曝光用感光性树脂组合物、感光性元件、抗蚀图案的形成方法、印刷配线板的制造方法和引线框的制造方法
TWI633388B (zh) * 2013-11-29 2018-08-21 旭化成電子材料股份有限公司 Photosensitive resin element
KR20160131084A (ko) * 2014-05-21 2016-11-15 아사히 가세이 가부시키가이샤 감광성 수지 조성물 및 회로 패턴의 형성 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11316456A (ja) * 1998-02-17 1999-11-16 Toppan Printing Co Ltd 無溶剤型感光性焼成ペ―スト組成物及び溶剤型感光性焼成ペ―スト組成物および構造体
JP2017167394A (ja) * 2016-03-17 2017-09-21 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターン付き基板の製造方法、及びプリント配線板の製造方法

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TW202132360A (zh) 2021-09-01
WO2021137545A1 (ko) 2021-07-08
JP2023159231A (ja) 2023-10-31
CN114787711A (zh) 2022-07-22
JP7376723B2 (ja) 2023-11-08
JP2023509860A (ja) 2023-03-10

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