TWI764050B - 半導體裝置及其形成方法 - Google Patents

半導體裝置及其形成方法

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Publication number
TWI764050B
TWI764050B TW108135427A TW108135427A TWI764050B TW I764050 B TWI764050 B TW I764050B TW 108135427 A TW108135427 A TW 108135427A TW 108135427 A TW108135427 A TW 108135427A TW I764050 B TWI764050 B TW I764050B
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Taiwan
Prior art keywords
region
fin
forming
etching process
reshaped
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TW108135427A
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English (en)
Chinese (zh)
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TW202029349A (zh
Inventor
林千
李堃毓
沙哈吉 Ｂ 摩爾
李承翰
張世杰
Original Assignee
台灣積體電路製造股份有限公司
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Priority claimed from US16/429,262 external-priority patent/US11315838B2/en
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202029349A publication Critical patent/TW202029349A/zh
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Publication of TWI764050B publication Critical patent/TWI764050B/zh

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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW108135427A 2018-09-28 2019-10-01 半導體裝置及其形成方法 TWI764050B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862738851P 2018-09-28 2018-09-28
US62/738,851 2018-09-28
US16/429,262 2019-06-03
US16/429,262 US11315838B2 (en) 2018-09-28 2019-06-03 FinFET device and method of forming same

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Publication Number Publication Date
TW202029349A TW202029349A (zh) 2020-08-01
TWI764050B true TWI764050B (zh) 2022-05-11

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