TWI759462B - Manufacturing method of organic electroluminescent display - Google Patents
Manufacturing method of organic electroluminescent display Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000012788 optical film Substances 0.000 claims abstract description 599
- 238000000034 method Methods 0.000 claims abstract description 328
- 239000007788 liquid Substances 0.000 claims abstract description 291
- 230000008569 process Effects 0.000 claims abstract description 288
- 238000000576 coating method Methods 0.000 claims abstract description 218
- 239000011248 coating agent Substances 0.000 claims abstract description 212
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 230000003287 optical effect Effects 0.000 claims abstract description 101
- 238000001035 drying Methods 0.000 claims abstract description 75
- 239000002904 solvent Substances 0.000 claims abstract description 44
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims description 503
- 230000001681 protective effect Effects 0.000 claims description 152
- 238000004140 cleaning Methods 0.000 claims description 117
- 238000000059 patterning Methods 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 61
- 239000011229 interlayer Substances 0.000 claims description 49
- 238000009501 film coating Methods 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 239000007888 film coating Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 64
- 239000000243 solution Substances 0.000 description 61
- 239000012044 organic layer Substances 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000011368 organic material Substances 0.000 description 13
- 238000001723 curing Methods 0.000 description 12
- 125000000524 functional group Chemical group 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000003973 paint Substances 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000006482 condensation reaction Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 229920001187 thermosetting polymer Polymers 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 238000007605 air drying Methods 0.000 description 6
- 238000007599 discharging Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000006757 chemical reactions by type Methods 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 239000002320 enamel (paints) Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000001029 thermal curing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004976 Lyotropic liquid crystal Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Polarising Elements (AREA)
Abstract
本發明之課題在於提供一種提升薄型化及可撓性之、具備光學構件之有機電致發光顯示器。 本發明之解決手段係一種有機電致發光顯示器之製造方法,具有藉由在有機發光二極體被預先形成的基板上、將包含液晶分子與溶媒的光學膜用塗布液予以塗布並乾燥,以形成液晶分子配向的光學膜之光學構件形成製程。The subject of this invention is to provide the organic electroluminescent display provided with the optical member which improves thinning and flexibility. The solution of the present invention is a method of manufacturing an organic electroluminescence display, which comprises coating and drying a coating liquid for an optical film containing liquid crystal molecules and a solvent on a substrate on which organic light emitting diodes are formed in advance, The optical component forming process of forming the optical film with liquid crystal molecular alignment.
Description
本發明係有關有機電致發光顯示器之製造方法。The present invention relates to a manufacturing method of an organic electroluminescence display.
在用例如有機發光二極體(OLED:Organic Light Emitting Diode)之顯示器(以下,稱為「有機EL(Electro Luminescence)顯示器」),使用供抑制外光反射用之圓偏光板。圓偏光板,係將直線偏光板與波長板(位相差板)、以其偏光軸以45度交叉之方式層積而製作出。In a display using, for example, an organic light emitting diode (OLED: Organic Light Emitting Diode) (hereinafter, referred to as an "organic EL (Electro Luminescence) display"), a circularly polarizing plate for suppressing reflection of external light is used. The circular polarizing plate is produced by laminating a linear polarizing plate and a wavelength plate (phase retardation plate) so that their polarization axes intersect at 45 degrees.
此外,有僅將例如波長板、形成其偏光軸傾斜15度或75度之場合。因而,有必要以任意的角度形成偏光板或波長板。再者,為了使偏光板或波長板的偏光軸以任意的角度交叉,而也有必要個別地形成該等偏光板或波長板。In addition, there is a case where, for example, only the wavelength plate is formed with its polarization axis inclined by 15 degrees or 75 degrees. Therefore, it is necessary to form a polarizing plate or a wavelength plate at an arbitrary angle. In addition, in order to make the polarization axes of the polarizing plates or the wave plates intersect at an arbitrary angle, it is also necessary to separately form the polarizing plates or the wave plates.
從前,此類的偏光板或波長板,使用例如延伸薄膜來製作。延伸薄膜,係藉由使薄膜在一方向延伸並黏貼,而使其材料中的分子在一方向配向之薄膜。Conventionally, such polarizing plates or wave plates have been produced using, for example, a stretched film. The stretched film is a film in which molecules in the material are aligned in one direction by extending and pasting the film in one direction.
可是,近年,隨著有機電致發光顯示器的薄型化,也要求偏光板或波長板的薄板化。然而,在製作偏光板或波長板時,如從前之方式使用延伸薄膜之場合,使該延伸薄膜自身的膜厚減少是有限度的,無法得到足夠的薄板。However, in recent years, along with thinning of organic electroluminescent displays, thinning of polarizers and wavelength plates has also been demanded. However, when a stretched film is used in the production of a polarizing plate or a wavelength plate, there is a limit to reducing the thickness of the stretched film itself, and a sufficient thin plate cannot be obtained.
於是,藉由在基板上塗布具有指定材料的塗布液、形成必要的膜厚之偏光板或波長板,來謀求薄板化。具體而言,將例如作為指定材料而具有液晶性之塗布液在基板塗布、使之流延・配向。液晶分子係於塗布液中先形成超分子會合體,在邊施加剪切應力邊使塗布液流動時,超分子會合體的長軸方向則在流動方向配向。Then, thinning is achieved by applying a coating liquid having a predetermined material on a substrate, and forming a polarizer or a wavelength plate having a necessary film thickness. Specifically, for example, a coating liquid having liquid crystallinity as a predetermined material is coated on a substrate, and is cast and aligned. Liquid crystal molecules form supramolecular assemblies in the coating liquid first, and when the coating liquid is flowed while applying shear stress, the long axis direction of the supramolecular assemblies is aligned in the flow direction.
為了以此方式作成可以對基板塗布塗布液,從前提出種種的裝置。例如專利文獻1記載之偏光膜印刷裝置,係具有供保持基板用的桌板、與對基板吐出墨液之狹縫式模具(slot die)。使狹縫式模具在印刷方向移動並對基板塗布墨液。 [先前技術文獻] [專利文獻]In order to make it possible to apply the coating liquid to the substrate in this way, various apparatuses have been proposed in the past. For example, the polarizing film printing apparatus described in
[專利文獻1]日本特開2005-62502號公報[Patent Document 1] Japanese Patent Laid-Open No. 2005-62502
[發明所欲解決之課題][The problem to be solved by the invention]
開發、檢討藉由在基板上塗布塗布液並予以乾燥,形成圓偏光板等光學構件之技術。Developed and reviewed the technology of forming optical components such as circularly polarizing plates by applying coating liquid on substrates and drying them.
從前,塗布光學構件用的塗布液的基板,係與形成有機發光二極體的基板分開準備,並貼合。Conventionally, the substrate on which the coating liquid for optical members is coated was prepared separately from the substrate on which the organic light emitting diode was formed, and was bonded.
因此,基板或黏接層等零件數量多,有機電致發光顯示器的薄型化不充分,有機電致發光的可撓性並不足夠。Therefore, the number of parts such as the substrate or the adhesive layer is large, the thinning of the organic electroluminescence display is insufficient, and the flexibility of the organic electroluminescence is insufficient.
本發明係有鑑於上述課題而作成的,主要目的在於提供一種提升薄型化及可撓性之、具備光學構件之有機電致發光顯示器。 [供解決課題之手段]The present invention has been made in view of the above-mentioned problems, and its main object is to provide an organic electroluminescence display having an optical member with improved thinning and flexibility. [Means for solving problems]
為了解決上述課題,根據本發明之一態樣,可提供一種有機電致發光顯示器之製造方法,具有藉由在有機發光二極體被預先形成的基板上、將包含液晶分子與溶媒的光學膜用塗布液予以塗布並乾燥,以形成液晶分子配向的光學膜之光學構件形成製程。 [發明之效果]In order to solve the above-mentioned problems, according to an aspect of the present invention, there is provided a method for manufacturing an organic electroluminescent display, which comprises an optical film comprising liquid crystal molecules and a solvent on a substrate on which organic light emitting diodes are formed in advance. It is coated with a coating liquid and dried to form an optical member forming process of an optical film with liquid crystal molecular alignment. [Effect of invention]
根據本發明之一態樣,可提供一種提升薄型化及可撓性之、具備光學構件之有機電致發光顯示器。According to an aspect of the present invention, an organic electroluminescent display having an optical member with improved thinning and flexibility can be provided.
以下,參照附圖說明供實施本發明之形態。在各圖,在同一或所對應之構成附上同一或所對應之符號,省略說明。Hereinafter, a mode for carrying out the present invention will be described with reference to the accompanying drawings. In each figure, the same or corresponding symbols are attached to the same or corresponding components, and descriptions thereof are omitted.
<有機電致發光顯示器> 圖1係顯示依照一實施形態的有機電致發光顯示器之平面圖。在圖1,顯示放大一單位電路11的電路。<Organic Electroluminescence Display> FIG. 1 is a plan view showing an organic electroluminescence display according to an embodiment. In FIG. 1, a circuit for amplifying a
有機電致發光顯示器,係具有基板10、配列在基板10上的複數單位電路11、設在基板10上的掃描線驅動電路14、與設在基板10上的資料線驅動電路15。在以接續在掃描線驅動電路14的複數掃描線16、與接續在資料線驅動電路15的複數資料線17所包圍之領域,設置單位電路11。單位電路11,係包含TFT層12、與有機發光二極體13。The organic electroluminescence display includes a
TFT層12,係具有複數TFT(薄膜電晶體:Thin Film Transistor)。一TFT係具有作為切換元件之功能,另一TFT則具有作為電流控制用元件控制流到有機發光二極體13的電流量之功能。TFT層12,係利用掃描線驅動電路14及資料線驅動電路15而動作,將電流對有機發光二極體13供給。TFT層12係為每個單位電路11設置,複數單位電路11係被獨立地控制。又,TFT層12為一般的構成即可,並不以圖1所示之構成為限。The
又,有機電致發光顯示器的驅動方式,於本實施形態為主動矩陣方式,被動矩陣亦可。In addition, the driving method of the organic electroluminescence display is an active matrix method in this embodiment, but a passive matrix method is also acceptable.
圖2係顯示依照一實施形態的有機電致發光顯示器的重要部分之剖面圖。圖2所示之有機電致發光顯示器係頂部發光方式,依序具有基板10、有機發光二極體13、密封層30、觸摸感應器40、及光學構件50。觸摸感應器40,在有機為電致發光顯示器為觸控面板之場合,被組裝入有機電致發光顯示器。FIG. 2 is a cross-sectional view showing an important part of an organic electroluminescent display according to an embodiment. The organic electroluminescent display shown in FIG. 2 is a top emission type, and includes a
基板10,可以是樹脂基板、玻璃基板、半導體基板、金屬基板等任一種,從可撓性提升之觀點而言最好是樹脂基板。基板10,從可撓性提升與水分透過性降低之觀點而言,也可以是樹脂基板與玻璃基板之層積基板。在基板10上被形成TFT層12。TFT層12上,形成平坦化因TFT層12而被形成的階差之平坦化層18。The
平坦化層18係具有絕緣性。在貫通平坦化層18的接觸孔,形成接觸塞19。接觸塞19,係電性地接續在平坦化層18的平坦面被形成的畫素電極21、與TFT層12。接觸塞19,可以用與畫素電極21相同材料、同時地被形成。The
有機發光二極體13,被形成在平坦化層18的平坦面上。有機發光二極體13,係具有畫素電極21、以畫素電極21作為基準並被設在與基板10相反側之對向電極22、與被形成畫素電極21與對向電極22之間之有機層23。藉由使TFT層12動作,對畫素電極21與對向電極22之間施加電壓、有機層23發光。The organic
畫素電極21為例如陰極,由鋁等金屬材料形成,將來自有機層23的光向有機層23反射。以畫素電極21反射之光,係透過有機層23或對向電極22,在外部被取出。畫素電極21,被設在每一單位電路11。The
對向電極22為例如陽極,由ITO(Indium Tin Oxide)等透明材料形成,讓來自有機層23的光透過。透過對向電極22之光,係通過密封層30或觸摸感應器40、光學構件50,在外部被取出。對向電極22,對複數單位電路11是共同的。The
有機層23,例如,從陰極側起向陽極側依序具有電子注入層24、電子輸送層25、發光層26、正電孔輸送層27、正電孔注入層28。在對陰極與陽極之間施加電壓時,自陰極朝電子注入層24注入電子,而且自陽極朝正電孔注入層28注入正電孔。被注入電子注入層24之電子,係利用電子輸送層25而往發光層26被輸送。此外,被注入正電孔注入層28之正電孔,係利用正電孔輸送層27而往發光層26被輸送。然後,於發光層26內正電孔與電子再結合,發光層26的發光材料被激發、發光層26發光。作為發光層26,例如,被形成發出紅光的紅色發光層、發出綠光的綠色發光層、及發出藍光的藍色發光層。The
又,有機層23,於本實施形態,從陰極側起向陽極側依序具有電子注入層24、電子輸送層25、發光層26、正電孔輸送層27、正電孔注入層28,但具有至少發光層26即可。有機層23,並不以圖2所示之構成為限。The
密封層30,係在與基板10之間、將有機發光二極體13密封。作為密封層30,可使用氧化矽層或氮化矽層等,利用例如成膜溫度為100℃以下的低溫CVD被形成。或者,貼附被形成防濕層的樹脂薄膜而作成密封層30亦可。The
觸摸感應器40,係檢測出手指等物體對有機電致發光顯示器的畫面之接觸或接近。觸摸感應器40之檢測方式並未特別限定,可以是例如靜電電容方式。作為靜電電容方式,有表面型靜電電容方式、投影型靜電電容方式等。作為投影型靜電電容方式,有自電容方式、互電容方式等。採用互電容方式時,因為可以同時多點檢測出而較佳。The
觸摸感應器40,詳述於後,被形成在預先形成有機發光二極體13的基板10上。因而,相比於以從前方式將觸摸感應器40形成在與基板10不同的基板、與基板10貼合之場合,可以削減基板或黏接層等零件數量,故而可以薄型化有機電致發光顯示器、可以提升有機電致發光顯示器的可撓性。The
觸摸感應器40,被形成在有機發光二極體13與光學構件50之間。在光學構件50為抑制外光反射的圓偏光膜之場合,因為圓偏光膜配設在比觸摸感應器40更靠近光取出側,所以能提升外光反射的抑制效率。The
光學構件50,係例如抑制外光反射的圓偏光膜,於本實施形態,作為第1光學膜具有1/4波長膜(λ/4膜)、作為第2光學膜具有直線偏光膜。1/4波長膜與直線偏光膜,係形成其偏光軸以45度交叉。又,構成光學構件50之光學膜數量並未特別限定。The
光學構件50,詳述於後,被形成在預先形成有機發光二極體13的基板10上。因而,相比於以從前方式將光學構件50形成在與基板10不同的基板、與基板10貼合之場合,可以削減基板或黏接層等零件數量,故而可以薄型化有機電致發光顯示器、可以提升有機電致發光顯示器的可撓性。The
光學構件50,為了抑制有機層23因紫外線導致劣化,而在不使用紫外線照射下被製造。此外,光學構件50,為了抑制有機層23因熱導致劣化,而在100℃以下的溫度被製造。The
又,圖2所示之有機電致發光顯示器1係頂部發光方式,但底部發光方式亦可。底部發光方式之場合,由於來自發光層26的光係透過畫素電極21從基板10被取出,所以透明電極之陽極被用作畫素電極21、反射電極之陰極被用作對向電極22。換言之,底部發光方式之場合,陽極與陰極之配置成為相反。此外,底部發光方式之場合,基板10係透明基板。再者,底部發光方式之場合,觸摸感應器40或光學構件50係以基板10作為基準,被形成在與有機發光二極體13相反側。In addition, the
<有機電致發光顯示器之製造方法> 圖3係顯示依照一實施形態的有機電致發光顯示器之製造方法之流程圖。如圖3所示,有機電致發光顯示器之製造方法,係具有觸摸感應器形成製程S110、與光學構件形成製程S120。又,觸摸感應器形成製程S110,係在有機電致發光顯示器為觸控面板之場合實行。以下,說明各製程。<Manufacturing method of organic electroluminescence display> FIG. 3 is a flowchart showing a manufacturing method of an organic electroluminescence display according to an embodiment. As shown in FIG. 3 , the manufacturing method of the organic electroluminescent display includes a touch sensor forming process S110 and an optical member forming process S120. In addition, the touch sensor forming process S110 is performed when the organic electroluminescent display is a touch panel. Hereinafter, each process will be described.
<觸摸感應器形成製程> 觸摸感應器形成製程S110,係在光學構件形成製程S120之前,在預先形成有機發光二極體13的基板10上形成觸摸感應器40。因而,相比於以從前方式將觸摸感應器40形成在與基板10不同的基板、與基板10貼合之場合,可以削減基板或黏接層等零件數量,故而可以薄型化有機電致發光顯示器、可以提升有機電致發光顯示器的可撓性。<Touch sensor formation process> The touch sensor formation process S110 is to form the
圖4係顯示依照一實施形態的觸摸感應器形成製程之流程圖。圖5係顯示依照一實施形態的被形成在基板上之第1金屬膜之剖面圖。圖6係顯示依照一實施形態的被形成在第1金屬膜上之光阻膜之剖面圖。圖7係顯示依照一實施形態的曝光及顯像後的光阻膜之剖面圖。圖8係顯示依照一實施形態的蝕刻後的第1金屬膜之剖面圖。圖9係顯示依照一實施形態的去除光阻膜後的第1金屬膜之剖面圖。圖10係顯示依照一實施形態的被形成在第1金屬膜上之絕緣膜之剖面圖。圖11係顯示依照一實施形態的被形成在絕緣膜上之第2金屬膜的一部分去除後的狀態之平面圖。圖5~圖10係沿著圖11的A-A線之剖面圖。在圖5~圖11,省略圖2所示之有機發光二極體13或密封層30等之圖示。FIG. 4 is a flowchart showing a process for forming a touch sensor according to an embodiment. 5 is a cross-sectional view showing a first metal film formed on a substrate according to an embodiment. 6 is a cross-sectional view showing a photoresist film formed on the first metal film according to an embodiment. 7 is a cross-sectional view showing a photoresist film after exposure and development according to an embodiment. 8 is a cross-sectional view showing the first metal film after etching according to an embodiment. 9 is a cross-sectional view showing the first metal film after removing the photoresist film according to an embodiment. 10 is a cross-sectional view showing an insulating film formed on the first metal film according to an embodiment. 11 is a plan view showing a state in which a part of the second metal film formed on the insulating film is removed according to an embodiment. 5 to 10 are cross-sectional views taken along the line A-A in FIG. 11 . In FIGS. 5 to 11 , illustrations of the organic
觸摸感應器形成製程S110,係具有在基板10上形成遮光性第1金屬膜41之製程S111,與利用光蝕刻法及蝕刻法選擇性地去除第1金屬膜41的一部分之製程S112。第1金屬膜41,如圖5所示被形成在基板10上(更詳細而言例如密封層30上)。在第1金屬膜41上,如圖6所示形成光阻膜42。光阻膜42,利用曝光及顯像而如圖7所示被圖案化。光阻膜42,可以是以顯像去除被曝光的部分之正型,抑或是在顯像後殘留被曝光的部分之負型。由於曝光的光會被第1金屬膜41遮擋,所以沒有使有機發光二極體13劣化之情形。之後,使用被圖案化的光阻膜42作為遮罩,如圖8所示方式將第1金屬膜41的一部分選擇性地去除。一部分被選擇性地去除之第1金屬膜41,係如圖11之虛線所示於平面看來被形成帶狀。之後,用於第1金屬膜41圖案化之光阻膜42,如圖9所示方式被去除。The touch sensor forming process S110 includes a process S111 of forming the light-shielding
又,在本說明書,第1金屬膜41具有遮光性,係意味第1金屬膜41的透過率為5%以下。第1金屬膜41的透過率最好是3%以下。在此,第1金屬膜41的透過率,係在第1金屬膜41上被形成的光阻膜42的曝光的光(例如波長365nm的光)透過第1金屬膜41之比率。In this specification, the
此外,觸摸感應器形成製程S110,係具有在一部分被選擇性地去除的第1金屬膜41上形成絕緣膜43之製程S113。絕緣膜43,係將第1金屬膜41與第2金屬膜45絕緣。作為絕緣膜43,可使用氧化矽膜或氮化矽膜等,利用例如成膜溫度為100℃以下的低溫CVD被形成。In addition, the touch sensor forming process S110 includes a process S113 of forming the insulating
再者,觸摸感應器形成製程S110,係具有在基板43上形成遮光性第2金屬膜45之製程S114,與利用光蝕刻法及蝕刻法選擇性地去除第2金屬膜45的一部分之製程S115。第2金屬膜45的形成及第2金屬膜的一部分去除,係與第1金屬膜41的形成及第1金屬膜41的一部分去除同樣地進行。一部分被選擇性地去除之第2金屬膜45,係如圖11所示於平面看來被形成帶狀。之後,用於第2金屬膜45圖案化之光阻膜被去除。Furthermore, the touch sensor forming process S110 includes a process S114 of forming the light-shielding
又,在本說明書,第2金屬膜45具有遮光性,係意味第2金屬膜45的透過率為5%以下。第2金屬膜45的透過率最好是3%以下。在此,第2金屬膜45的透過率,係在第2金屬膜45上被形成的光阻膜的曝光的光(例如波長365nm的光)透過第2金屬膜45之比率。In this specification, the
再者,觸摸感應器形成製程S110,係具有在一部分被選擇性地去除的第2金屬膜45上形成觸摸感應器保護膜47之製程S116。觸摸感應器保護膜47係與絕緣膜43同樣地被形成。例如,作為觸摸感應器保護膜47,可使用氧化矽膜或氮化矽膜等,利用例如成膜溫度為100℃以下的低溫CVD被形成。Furthermore, the touch sensor forming process S110 includes a process S116 of forming the touch sensor
如此作法,得到由第1金屬膜41、絕緣膜43、第2金屬膜45、及觸摸感應器保護膜47構成之觸摸感應器40。第1金屬膜41或第2金屬膜45,以平面看來並不與有機發光二極體13的有機層23重疊之方式,如圖11所示被形成四角格子狀。第1金屬膜41及第2金屬膜45,其中1個被用作驅動電極,餘下的1個則用作受訊電極。觸摸感應器40,係藉由檢測出驅動電極與受訊電極之間的電容改變,而檢測出手指等物體對有機電致發光顯示器的畫面之接觸或接近。In this way, the
根據本實施形態的觸摸感應器形成製程S110,可以邊抑制因光蝕刻法的曝光導致的有機發光二極體13的有機層23劣化,邊在預先形成有機發光二極體13的基板10上形成觸摸感應器40。相比於以從前方式將觸摸感應器40形成在與基板10不同的基板、與基板10貼合之場合,可以削減基板或黏接層等零件數量,故而可以薄型化有機電致發光顯示器、可以提升有機電致發光顯示器的可撓性。According to the touch sensor formation process S110 of the present embodiment, the
由於本實施形態的觸摸感應器形成製程S110係在光學構件形成製程S120之前進行,所以觸摸感應器40被形成在有機發光二極體13與光學構件50之間。在光學構件50為抑制外光反射的圓偏光膜之場合,因為圓偏光膜配設在比觸摸感應器40更靠近光取出側,所以能提升外光反射的抑制效率。Since the touch sensor forming process S110 of the present embodiment is performed before the optical member forming process S120 , the
<光學構件形成製程> 光學構件形成製程S120,係藉由在預先形成有機發光二極體13的基板10上,將包含液晶分子與溶媒的光學膜用塗布液予以塗布並乾燥,而形成液晶分子配向之光學膜。由光學膜等構成光學構件50。<Optical member forming process> In the optical member forming process S120, liquid crystal molecules are formed by coating and drying an optical film coating liquid containing liquid crystal molecules and a solvent on the
光學構件50,具有例如第1光學膜與第2光學膜。第1光學膜及第2光學膜,其中1個是相位差膜,而餘下的1個為偏光膜。The
光學構件50,係例如抑制外光反射的圓偏光膜,於本實施形態,作為第1光學膜具有1/4波長膜(λ/4膜)、作為第2光學膜具有直線偏光膜。1/4波長膜與直線偏光膜,係形成其偏光軸以45度交叉。又,構成光學構件50之光學膜數量並未特別限定。The
根據本實施形態之光學構件形成製程S120,光學構件50,被形成在預先形成有機發光二極體13的基板10上。因而,相比於以從前方式將光學構件50形成在與基板10不同的基板、與基板10貼合之場合,可以削減基板或黏接層等零件數量,故而可以薄型化有機電致發光顯示器、可以提升有機電致發光顯示器的可撓性。According to the optical member forming process S120 of the present embodiment, the
根據本實施形態之光學構件形成製程S120,光學構件50,為了抑制有機層23因紫外線導致劣化,而在不使用紫外線照射下被製造。此外,光學構件50,為了抑制有機層23因熱導致劣化,而在100℃以下的溫度被製造。According to the optical member forming process S120 of the present embodiment, the
<第1實施形態之光學構件形成製程> 圖12係顯示依照第1實施形態的光學構件形成製程之流程圖。光學構件形成製程S120,係如圖12所示,依序具有第1光學膜形成製程S121、中間膜形成製程S122、第1光學膜圖案化製程S123、第2光學膜形成製程S124、保護膜形成製程S125、與第2光學膜圖案化製程S126。以下,說明各製程。<Optical member forming process according to the first embodiment> FIG. 12 is a flowchart showing an optical member forming process according to the first embodiment. The optical component forming process S120, as shown in FIG. 12, includes a first optical film forming process S121, an intermediate film forming process S122, a first optical film patterning process S123, a second optical film forming process S124, and a protective film forming process in sequence. Process S125, and a second optical film patterning process S126. Hereinafter, each process will be described.
又,也可以並不進行圖12所示的全部製程。例如詳細敘述於後,第1光學膜圖案化製程S123或第2光學膜圖案化製程S126,在將光學構件50在基板10上隔著間隔複數形成之場合是有效果的,而在將光學構件50在基板10上僅形成1個之場合則是省略亦可。針對後述的一部分不溶化的處理是同樣的。In addition, all the processes shown in FIG. 12 may not be performed. For example, as will be described in detail later, the first optical film patterning process S123 or the second optical film patterning process S126 is effective when the
又,也可以進行圖12所示的製程以外的製程。例如,在第1光學膜形成製程S121之前,也可以為了改善第1光學膜對基板10的密貼性,而進行將基板10的第1光學膜被形成的面(更具體而言為密封層30或觸摸感應器保護膜47)表面改質之製程。作為表面改質膜,可以形成矽烷耦合劑等之有機膜、或者氮化矽等之無機膜。In addition, a process other than the process shown in FIG. 12 may be performed. For example, before the first optical film forming process S121, in order to improve the adhesion of the first optical film to the
<第1實施形態之1光學膜形成製程> 於圖12之第1光學膜形成製程S121,係如圖13~圖15所示,藉由在基板10上將包含液晶分子與溶媒的第1光學膜用塗布液61予以塗布並乾燥,形成第1光學膜62。第1光學膜62,例如1/4波長膜。<The first optical film forming process of the first embodiment> In the first optical film forming process S121 of FIG. 12, as shown in FIG. 13 to FIG. The
圖13係顯示依照第1實施形態的被塗布在基板上之第1光學膜用塗布液的液膜之側面圖。圖14係顯示依照第1實施形態之利用第1光學膜用塗布液的液膜乾燥而被形成之第1光學膜之側面圖。圖15係顯示依照第1實施形態的一部分不溶化之第1光學膜之側面圖。FIG. 13 is a side view showing a liquid film of the coating liquid for the first optical film applied on the substrate according to the first embodiment. 14 is a side view showing the first optical film formed by drying the liquid film of the coating liquid for the first optical film according to the first embodiment. FIG. 15 is a side view showing a partially insolubilized first optical film according to the first embodiment.
在圖13~圖15,省略圖2所示之有機發光二極體13或密封層30等之圖示。又,在圖16~圖24,同樣地,省略圖2所示之有機發光二極體13或密封層30等之圖示。In FIGS. 13 to 15 , illustrations of the organic
如圖13所示,於第1光學膜形成製程S121,在基板10上自塗布噴嘴60塗布第1光學膜用塗布液61。塗布噴嘴60,係例如在下面具有狹縫狀吐出口之狹縫式塗布裝置。As shown in FIG. 13 , in the first optical film forming process S121 , the
第1光學膜用塗布液61,係包含溶致液晶分子或熱致液晶分子等之液晶分子、與溶解液晶分子之溶媒。作為溶媒,例如可使用水等。又,作為溶媒,也可以使用有機溶媒。The
藉由使塗布噴嘴60與基板10相對地在一方向移動,可以對被塗布到基板10的第1光學膜用塗布液61施加剪切應力。剪切應力的作用方向,係與塗布噴嘴60與基板10之相對的移動方向一致。藉由控制剪切應力的作用方向,可以控制液晶分子的配向方向。By moving the
又,於本實施形態可以在第1光學膜用塗布液61之塗布使用狹縫式塗布裝置,也可以使用浸入式塗布裝置等。可以對第1光學膜用塗布液61施加剪切應力,且能控制該剪切應力的作用方向即可。Moreover, in this embodiment, a slit coating apparatus may be used for the coating of the
如圖14所示,於第1光學膜形成製程S121,將在基板10上被塗布的第1光學膜用塗布液61的液膜(參照圖13)予以乾燥,形成第1光學膜62。從第1光學膜用塗布液61的液膜中去除溶媒,適切地維持液晶分子的配向。第1光學膜62,係例如1/4波長膜。As shown in FIG. 14 , in the first optical film forming process S121 , the liquid film (see FIG. 13 ) of the first optical
在第1光學膜用塗布液61的液膜之乾燥,可以採用減壓乾燥、自然乾燥、加熱乾燥、風乾燥等。減壓乾燥,相比於自然乾燥,較可以縮短處理時間。此外,減壓乾燥,相比於加熱乾燥或風乾燥,較能抑制液膜的對流、且較可以抑制液晶分子的配向的混亂。以減壓乾燥而溶媒殘留之場合,再進行加熱乾燥亦可。For drying of the liquid film of the
如圖15所示,於第1光學膜形成製程S121,對於第1光學膜圖案化製程S123所使用的洗淨液,僅不溶解第1光學膜62的一部分63亦可。該一部分不溶解,可因應必要而進行。As shown in FIG. 15 , in the first optical film forming process S121 , the cleaning solution used in the first optical film patterning process S123 may not dissolve only a
又,作為於第1光學膜圖案化製程S123所使用的洗淨液,可以使用與第1光學膜用塗布液61的溶媒相同者,例如可以使用水。該場合,進行對水的不溶解。In addition, as the cleaning liquid used in the 1st optical film patterning process S123, the same solvent as the
不溶解第1光學膜62的一部分63之定著液110,係從例如噴墨方式的塗布噴嘴111被吐出。塗布噴嘴111,係具有複數朝下面吐出定著液110液滴之吐出噴嘴。The fixing liquid 110 which does not dissolve the
藉由邊使塗布噴嘴111與基板10相對地移動、邊自塗布噴嘴111將定著液110液滴吐出,而對第1光學膜62的一部分63選擇性地塗布定著液110。藉此,不溶解第1光學膜62的一部分63。The fixing
定著液110,例如,藉由將第1光學膜62末端的官能基(例如OH基等之水溶性官能基)置換成另一官能基,而不溶解第1光學膜62的一部分63。此外,定著液110,亦可藉由利用縮合反應(例如OH基等之脫水縮合反應)使之高分子化,而不溶解第1光學膜62的一部分63。後者之場合,相比於前者之場合,由於高分子化的進行,而使不溶解容易進行。The fixing
定著液110,在不溶解第1光學膜62的一部分63之後被去除。定著液110,可以包含水、抑或包含有機溶媒。The fixing
被塗布定著液110之領域,例如,可以是被形成複數OLED等畫素之領域(以下,簡稱「畫素區域」)。The area to which the fixing
又,於本實施形態,由於僅對第1光學膜62的一部分63塗布定著液110,而使用噴墨方式的塗布噴嘴111,但本發明並不以此為限。例如,也可以藉由用遮罩僅覆蓋第1光學膜62的剩餘部分,之後,將基板10全體浸漬在定著液110,而僅對第1光學膜62的一部分63塗布定著液。In addition, in this embodiment, since the fixing
<第1實施形態之中間膜形成製程> 於圖12之中間膜形成製程S122,係如圖16~圖17所示,藉由將不同於第1光學膜用塗布液61之中間膜用塗布液71在第1光學膜62上予以塗布並乾燥,形成中間膜72。<Interlayer film formation process of the first embodiment> In the interlayer film formation process S122 of FIG. 12 , as shown in FIGS. 16 to 17 , a coating solution for the interlayer film different from the coating solution for the first
圖16係顯示依照第1實施形態的被塗布在第1光學膜上之中間膜用塗布液的液膜之側面圖。圖17係顯示依照第1實施形態之利用中間膜用塗布液的液膜乾燥而被形成之中間膜之側面圖。16 is a side view showing a liquid film of a coating liquid for an intermediate film applied on a first optical film according to the first embodiment. 17 is a side view showing an intermediate film formed by drying the liquid film of the coating liquid for an intermediate film according to the first embodiment.
如圖16所示,於中間膜形成製程S122,在第1光學膜62被形成的基板10上自塗布噴嘴70塗布中間膜用塗布液71。塗布噴嘴70,可以是噴墨方式,具有複數朝下面吐出中間膜用塗布液71液滴之吐出噴嘴。As shown in FIG. 16 , in the intermediate film forming process S122 , the
藉由邊使塗布噴嘴70與基板10相對地移動、邊自塗布噴嘴70將中間膜用塗布液71液滴吐出,而對第1光學膜62的一部分63選擇性地塗布中間膜用塗布液71。By moving the
中間膜用塗布液71被塗布在第1光學膜62上。因此,形成第1光學膜62之液晶分子,對中間膜用塗布液71的溶媒,可以是具有不溶性。利用中間膜用塗布液71的塗布可以防止第1光學膜62溶解。The
中間膜用塗布液71,係包含形成中間膜72的有機材料、與溶解該有機材料之溶媒。形成中間膜72之有機材料,係包含對第1光學膜圖案化製程S123所使用的洗淨液具不溶性的高分子等。The
作為中間膜用塗布液71,例如,可以使用熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等。具體而言,可以使用油性瓷漆塗料、鄰苯二甲酸樹脂塗料等。As the
熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等,由於是利用熱硬化或化學反應或者乾燥硬化而被高分子化,而可以形成緻密的中間膜72。因而,可以提升中間膜72對第1光學膜圖案化製程S123所使用的洗淨液之不溶性。Thermosetting clear paint, chemical reaction type clear paint, drying curing clear paint, etc. are polymerized by thermal curing, chemical reaction, or drying curing, so that a dense
中間膜用塗布液71也可以具有與定著液110同樣的功能。可以促進第1光學膜62的一部分不溶解。又,在利用中間膜用塗布液71進行第1光學膜62的一部分不溶解之場合,也可以於上述第1光學膜形成製程S121並不進行第1光學膜62的一部分不溶解。The
例如,中間膜用塗布液71,也可以藉由將第1光學膜62末端的官能基(例如OH基等之水溶性官能基)置換成另一官能基,而不溶解第1光學膜62的一部分63。此外,中間膜用塗布液71,亦可藉由利用縮合反應(例如OH基等之脫水縮合反應)使之高分子化,而不溶解第1光學膜62的一部分63。後者之場合,相比於前者之場合,由於高分子化的進行,而使不溶解容易進行。For example, in the
中間膜用塗布液71被塗布之領域,可以是與定著液110被塗布之領域一致。例如,中間膜用塗布液71被塗布之領域,可以是基板10上的畫素區域。The area where the
如圖17所示,於中間膜形成製程S122,將在基板10上被塗布的中間膜用塗布液71的液膜(參照圖16)予以乾燥,形成中間膜72。從中間膜用塗布液71的液膜中去除溶媒,形成中間膜72。As shown in FIG. 17 , in the intermediate film forming process S122 , the liquid film (see FIG. 16 ) of the coating liquid for an
在中間膜用塗布液71的液膜之乾燥,可以採用減壓乾燥、自然乾燥、加熱乾燥、風乾燥等。減壓乾燥,相比於自然乾燥,較可以縮短處理時間。以減壓乾燥而溶媒殘留之場合,再進行加熱乾燥亦可。Drying of the liquid film of the
中間膜72,對第1光學膜圖案化製程S123所使用的洗淨液具有不溶性。中間膜72,不同於第1光學膜62,係具有光學均向性。中間膜72的可見光透過率最好是95%以上。此外,中間膜72之膜厚,最好是10μm以下。此外,中間膜72的殘留應力,為了抑制光學構件的變形,而愈小愈好。The
中間膜72,係覆蓋第1光學膜62的一部分63的主表面。中間膜72,係以不使第1光學膜62的一部分63損傷或異物等附著之方式,發揮保護第1光學膜62的一部分63之作用。中間膜72之鉛筆硬度,最好是2H以上。由於光學構件於製造途中暫時被中斷、且耗費時間才能恢復之場合,損傷或異物附著之風險高,所以特別有效果。The
又,由於第1光學膜62的剩餘部分,係於第1光學膜圖案化製程S123被去除,所以損傷或異物附著並不會成為問題。此外,附著在中間膜72的異物可以藉洗淨而去除,而因為該洗淨損傷到第1光學膜62的一部分63則無。In addition, since the remaining portion of the first
<第1實施形態之第1光學膜圖案化製程> 於圖12的第1光學膜圖案化製程S123,在中間膜形成製程S122之後、第2光學膜形成製程S124之前,使用僅覆蓋第1光學膜62的一部分63(參照圖17)之中間膜72作為遮罩,如圖18所示去除第1光學膜62的剩餘部分。<The first optical film patterning process of the first embodiment> In the first optical film patterning process S123 of FIG. 12 , after the intermediate film forming process S122 and before the second optical film forming process S124, only the first optical film is used to cover the first optical film. The
圖18係顯示依照第1實施形態的被去除未以中間膜覆蓋的部分之第1光學膜之側面圖。第1光學膜圖案化製程S123之間,可以用中間膜72保護第1光學膜62的一部分63、可以抑制第1光學膜62的一部分63的形狀崩壞。因而,可以提升光學構件的品質。18 is a side view showing the first optical film from which the portion not covered with the interlayer film is removed according to the first embodiment. During the first optical film patterning process S123, a
例如,於第1光學膜圖案化製程S123,使用溶解第1光學膜62之洗淨液。洗淨液,例如邊以旋轉卡盤使基板10旋轉、邊對基板10供給。被供給到基板10的洗淨液,係利用離心力而擴散到基板10全體,且從基板10的外周緣被甩出。For example, in the first optical film patterning process S123, a cleaning solution for dissolving the first
第1光學膜62的一部分63,由於以中間膜72覆蓋著,所以並未與洗淨液接觸,且不會因洗淨液造成型崩。另一方面,第1光學膜62的剩餘部分,由於與洗淨液接觸,所以會被洗淨液溶解、且被去除。Since a
又,也可以藉由將洗淨液貯存在洗淨槽、將基板10浸漬在洗淨槽的洗淨液,而一邊留下第1光學膜62的一部分63、一邊溶解並去除第1光學膜62的剩餘部分。洗淨槽的洗淨液也可以用攪拌翼等攪拌。In addition, the first optical film may be dissolved and removed by storing the cleaning solution in the cleaning tank and immersing the
以確實地留下第1光學膜62的一部分63之方式,在上述第1光學膜形成製程S121或上述中間膜形成製程S122,第1光學膜62的一部分63對洗淨液不溶解是有效果的。可以防止因洗淨液的環繞造成過度的去除,且可以確實地留下第1光學膜62的一部分63。In the above-mentioned first optical film forming process S121 or the above-mentioned intermediate film forming process S122, the
又,由於中間膜72具有對洗淨液的不溶性,所以在上述第1光學膜形成製程S121或上述中間膜形成製程S122,即使不進行第1光學膜62的一部分不溶解,也是可以圖案化第1光學膜62。該場合,可以削減製程數。In addition, since the
於上述第1光學膜形成製程S121,由於是邊施加剪切應力邊塗布第1光學膜用塗布液61,所以僅對畫素區域塗布第1光學膜用塗布液61是困難的。從而,進行第1光學膜圖案化製程S123是有效果的。In the above-described first optical film forming process S121, since the first optical
又,於本實施形態係使用洗淨液將第1光學膜62的剩餘部分去除,但第1光學膜62的剩餘部分的去除方法則並未特別限定。例如,也可以採用蝕刻法。蝕刻,可以是濕式蝕刻、乾式蝕刻任一種。In addition, in this embodiment, although the remaining part of the 1st
以下,於第1光學膜圖案化製程S123留下的第1光學膜62的一部分63,也稱作「第1光學膜63」。Hereinafter, the
<第1實施形態之第2光學膜形成製程> 於圖12之第2光學膜形成製程S124,如圖19~圖21所示,藉由將包含液晶分子與溶媒的第2光學膜用塗布液81在中間膜72上予以塗布並乾燥,而形成第2光學膜82。第2光學膜82,係例如直線偏光膜。<The second optical film formation process of the first embodiment> In the second optical film formation process S124 of FIG. 12 , as shown in FIGS. 19 to 21 , by applying a coating liquid for the second optical film containing liquid crystal molecules and a solvent 81 is coated on the
圖19~圖21係顯示依照第1實施形態的第2光學膜形成製程之說明側面圖。圖19係顯示依照第1實施形態的被塗布在中間膜上之第2光學膜用塗布液的液膜之側面圖。圖20係顯示依照第1實施形態之利用第2光學膜用塗布液的液膜乾燥而被形成之第2光學膜之側面圖。圖21係顯示依照第1實施形態的一部分不溶化之第2光學膜之側面圖。19 to 21 are explanatory side views showing the second optical film forming process according to the first embodiment. 19 is a side view showing a liquid film of the second optical film coating liquid applied on the intermediate film according to the first embodiment. 20 is a side view showing the second optical film formed by drying the liquid film of the coating liquid for the second optical film according to the first embodiment. Fig. 21 is a side view showing a partially insolubilized second optical film according to the first embodiment.
如圖19所示,於第2光學膜形成製程S124,在基板10上自塗布噴嘴80塗布第2光學膜用塗布液81。塗布噴嘴80,係例如在下面具有狹縫狀吐出口之狹縫式塗布裝置。As shown in FIG. 19 , in the second optical film forming process S124 , the second optical
第2光學膜用塗布液81被塗布在中間膜72上。因此,形成中間膜72之有機材料,對第2光學膜用塗布液81的溶媒,可以是具有不溶性。利用第2光學膜用塗布液81的塗布可以防止中間膜72溶解。The second optical
第2光學膜用塗布液81,係包含溶致液晶分子或熱致液晶分子等之液晶分子、與溶解液晶分子之溶媒。作為溶媒,例如可使用水等。又,作為溶媒,也可以使用有機溶媒。The
藉由使塗布噴嘴80與基板10相對地在一方向移動,可以對被塗布到基板10的第2光學膜用塗布液81施加剪切應力。剪切應力的作用方向,係與塗布噴嘴80與基板10之相對的移動方向一致。藉由控制剪切應力的作用方向,可以控制液晶分子的配向方向。By moving the
於第2光學膜形成製程S124之剪切應力的作用方向,係作成對於第1光學膜形成製程S121之剪切應力的作用方向以斜45°交叉之方向。藉此,1/4波長膜與直線偏光膜,係形成其偏光軸以45度交叉。The direction of action of the shear stress in the second optical film forming process S124 is a direction intersecting at an oblique 45° with respect to the direction of action of the shear stress in the first optical film forming process S121. Thereby, the 1/4 wavelength film and the linear polarizing film are formed so that their polarization axes intersect at 45 degrees.
又,於本實施形態可以在第2光學膜用塗布液81之塗布使用狹縫式塗布裝置,也可以使用浸入式塗布裝置等。可以對第2光學膜用塗布液81施加剪切應力,且能控制該剪切應力的作用方向即可。In addition, in this embodiment, a slit coating apparatus may be used for the coating of the
如圖20所示,於第2光學膜形成製程S124,將在基板10上被塗布的第2光學膜用塗布液81的液膜(參照圖19)予以乾燥,形成第2光學膜82。從第2光學膜用塗布液81的液膜中去除溶媒,適切地維持液晶分子的配向。第2光學膜82,係例如直線偏光膜。As shown in FIG. 20 , in the second optical film forming process S124 , the liquid film (see FIG. 19 ) of the second optical
在第2光學膜用塗布液81的液膜之乾燥,可以採用減壓乾燥、自然乾燥、加熱乾燥、風乾燥等。減壓乾燥,相比於自然乾燥,較可以縮短處理時間。此外,減壓乾燥,相比於加熱乾燥或風乾燥,較能抑制液膜的對流、且較可以抑制液晶分子的配向的混亂。以減壓乾燥而溶媒殘留之場合,再進行加熱乾燥亦可。Drying of the liquid film of the
如圖21所示,於第2光學膜形成製程S124,僅第2光學膜82的一部分83對於第2光學膜圖案化製程S126所使用的洗淨液不溶解亦可。該一部分不溶解,可因應必要而進行。As shown in FIG. 21, in the second optical film forming process S124, only a
又,作為於第2光學膜圖案化製程S126所使用的洗淨液,可以使用與第2光學膜用塗布液81的溶媒相同者,例如可以使用水。該場合,進行對水的不溶解。Moreover, as the cleaning liquid used in the 2nd optical film patterning process S126, the same solvent as the
不溶解第2光學膜82的一部分83之定著液120,係從例如噴墨方式的塗布噴嘴121被吐出。塗布噴嘴121,係具有複數朝下面吐出定著液120液滴之吐出噴嘴。The fixing liquid 120 that does not dissolve the
藉由邊使塗布噴嘴121與基板10相對地移動、邊自塗布噴嘴121將定著液120液滴吐出,而對第2光學膜82的一部分83選擇性地塗布定著液120。藉此,不溶解第2光學膜82的一部分83。The fixing
定著液120,例如,藉由將第2光學膜82末端的官能基(例如OH基等之水溶性官能基)置換成另一官能基,而不溶解第2光學膜82的一部分83。此外,定著液120,亦可藉由利用縮合反應(例如OH基等之脫水縮合反應)使之高分子化,而不溶解第2光學膜82的一部分83。後者之場合,相比於前者之場合,由於高分子化的進行,而使不溶解容易進行。The fixing
定著液120,在不溶解第2光學膜82的一部分83之後被去除。定著液120,可以包含水、抑或包含有機溶媒。The fixing
塗布定著液120之領域,可以是例如畫素區域。The area where the fixing
又,於本實施形態,由於僅對第2光學膜82的一部分83塗布定著液120,而使用噴墨方式的塗布噴嘴121,但本發明並不以此為限。例如,也可以藉由用遮罩僅覆蓋第2光學膜82的剩餘部分,之後,將基板10全體浸漬在定著液120,而僅對第2光學膜82的一部分83塗布定著液。In addition, in this embodiment, since the fixing
<第1實施形態之保護膜形成製程> 於圖12之保護膜形成製程S125,係如圖22~圖23所示,藉由將不同於第2光學膜用塗布液81之保護膜用塗布液91在第2光學膜82上予以塗布並乾燥,形成保護膜92。<The protective film forming process of the first embodiment> In the protective film forming process S125 of FIG. 12 , as shown in FIGS. 22 to 23 , by applying a coating liquid for the protective film different from the coating liquid for the second
圖22係顯示依照第1實施形態的被塗布在第2光學膜上之保護膜用塗布液的液膜之側面圖。圖23係顯示依照第1實施形態之利用保護膜用塗布液的液膜乾燥而被形成之保護膜之側面圖。22 is a side view showing the liquid film of the coating liquid for protective film applied on the second optical film according to the first embodiment. 23 is a side view showing a protective film formed by drying the liquid film of the coating liquid for protective film according to the first embodiment.
如圖22所示,於保護膜形成製程S125,在第2光學膜82被形成的基板10上自塗布噴嘴90塗布保護膜用塗布液91。塗布噴嘴90,可以是噴墨方式,具有複數朝下面吐出保護膜用塗布液91液滴之吐出噴嘴。As shown in FIG. 22 , in the protective film forming process S125 , the
藉由邊使塗布噴嘴90與基板10相對地移動、邊自塗布噴嘴90將保護膜用塗布液91液滴吐出,而對第2光學膜82的一部分83選擇性地塗布保護膜用塗布液91。The
保護膜用塗布液91被塗布在第2光學膜82上。因此,形成第2光學膜82之液晶分子,對保護膜用塗布液91的溶媒,可以是具有不溶性。利用保護膜用塗布液91的塗布可以防止第2光學膜82溶解。The
保護膜用塗布液91,係包含形成保護膜92的有機材料、與溶解該有機材料之溶媒。形成保護膜92之有機材料,係包含對第2光學膜圖案化製程S126所使用的洗淨液具不溶性的高分子等。The
作為保護膜用塗布液91,例如,可以使用熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等。具體而言,可以使用油性瓷漆塗料、鄰苯二甲酸樹脂塗料等。As the
熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等,由於是利用熱硬化或化學反應或者乾燥硬化而被高分子化,而可以形成緻密的保護膜92。因而,可以提升保護膜92對第2光學膜圖案化製程S126所使用的洗淨液之不溶性。Thermosetting clear coatings, chemical reaction clear coatings, drying curing clear coatings, etc., are polymerized by thermal curing, chemical reaction, or drying curing, so that a dense
保護膜用塗布液91也可以具有與定著液120同樣的功能。可以促進第2光學膜82的一部分不溶解。又,在利用保護膜用塗布液91進行第2光學膜82的一部分不溶解之場合,也可以於上述第2光學膜形成製程S124並不進行第2光學膜82的一部分不溶解。The
例如,保護膜用塗布液91,也可以藉由將第2光學膜82末端的官能基(例如OH基等之水溶性官能基)置換成另一官能基,而不溶解第2光學膜82的一部分83。此外,保護膜用塗布液91,亦可藉由利用縮合反應(例如OH基等之脫水縮合反應)使之高分子化,而不溶解第2光學膜82的一部分83。後者之場合,相比於前者之場合,由於高分子化的進行,而使不溶解容易進行。For example, in the
保護膜用塗布液91被塗布之領域,可以是與定著液120被塗布之領域一致。例如,保護膜用塗布液91被塗布之領域,可以是基板10上的畫素區域。The area where the protective
如圖23所示,於保護膜形成製程S125,將在基板10上被塗布的保護膜用塗布液91的液膜(參照圖22)予以乾燥,形成保護膜92。從保護膜用塗布液91的液膜中去除溶媒,形成保護膜92。As shown in FIG. 23 , in the protective film forming step S125 , the liquid film (see FIG. 22 ) of the protective
在保護膜用塗布液91的液膜之乾燥,可以採用減壓乾燥、自然乾燥、加熱乾燥、風乾燥等。減壓乾燥,相比於自然乾燥,較可以縮短處理時間。以減壓乾燥而溶媒殘留之場合,再進行加熱乾燥亦可。Drying of the liquid film of the
保護膜92,對第2光學膜圖案化製程S126所使用的洗淨液具有不溶性。保護膜92,不同於第2光學膜82,係具有光學均向性。保護膜92的可見光透過率最好是95%以上。此外,保護膜92之膜厚,最好是10μm以下。此外,保護膜92的殘留應力,為了抑制光學構件的變形,而愈小愈好。The
保護膜92,係覆蓋第2光學膜82的一部分83的主表面。保護膜92,係以不使第2光學膜82的一部分83損傷或異物等附著之方式,發揮保護第2光學膜82的一部分83之作用。中間膜72之鉛筆硬度,最好是2H以上。The
又,由於第2光學膜82的剩餘部分,係於第2光學膜圖案化製程S126被去除,所以損傷或異物附著並不會成為問題。此外,附著在保護膜92的異物可以藉洗淨而去除,而因為該洗淨損傷到第2光學膜82的一部分83則無。In addition, since the remaining portion of the second
又,本實施形態之保護膜92,係藉由將保護膜用塗布液91在第2光學膜82上塗布並乾燥而形成,但以薄膜的形態被黏貼在第2光學膜82亦可。In addition, although the
<第1實施形態之第2光學膜圖案化製程> 於圖12的第2光學膜圖案化製程S126,在保護膜形成製程S125之後,使用僅覆蓋第2光學膜82的一部分83之保護膜92(參照圖23)作為遮罩,如圖24所示去除第2光學膜82的剩餘部分。<The second optical film patterning process of the first embodiment> In the second optical film patterning process S126 of FIG. 12, after the protective film forming process S125, the
圖24係顯示依照第1實施形態的被去除未以保護膜覆蓋的部分之第2光學膜之側面圖。第2光學膜圖案化製程S126之間,可以用保護膜92保護第2光學膜82的一部分83、可以抑制第2光學膜82的一部分83的形狀崩壞。因而,可以提升光學構件的品質。24 is a side view showing the second optical film from which the portion not covered with the protective film is removed according to the first embodiment. During the second optical film patterning process S126, a
例如,於第2光學膜圖案化製程S126,使用溶解第2光學膜82之洗淨液。洗淨液,例如邊以旋轉卡盤使基板10旋轉、邊對基板10供給。被供給到基板10的洗淨液,係利用離心力而擴散到基板10全體,且從基板10的外周緣被甩出。For example, in the second optical film patterning process S126, a cleaning solution for dissolving the second
第2光學膜82的一部分83,由於以保護膜92覆蓋著,所以並未與洗淨液接觸,且不會因洗淨液造成型崩。另一方面,第2光學膜82的剩餘部分,由於與洗淨液接觸,所以會被洗淨液溶解、且被去除。Since a
又,也可以藉由將洗淨液貯存在洗淨槽、將基板10浸漬在洗淨槽的洗淨液,而一邊留下第2光學膜82的一部分83、一邊溶解並去除第2光學膜82的剩餘部分。洗淨槽的洗淨液也可以用攪拌翼等攪拌。In addition, the second optical film may be dissolved and removed while the
以確實地留下第2光學膜82的一部分83之方式,在上述第2光學膜形成製程S124或上述保護膜形成製程S125,第2光學膜82的一部分83對洗淨液不溶解是有效果的。可以防止因洗淨液的環繞造成過度的去除,且可以確實地留下第2光學膜82的一部分83。In the above-mentioned second optical film forming process S124 or the above-mentioned protective film forming process S125, the
又,由於保護膜92具有對洗淨液的不溶性,所以在上述第2光學膜形成製程S124或上述保護膜形成製程S125,即使不進行第2光學膜82的一部分不溶解,也是可以圖案化第2光學膜82。該場合,可以削減製程數。In addition, since the
於上述第2光學膜形成製程S124,由於是邊施加剪切應力邊塗布第2光學膜用塗布液81,所以僅對畫素區域塗布第2光學膜用塗布液81是困難的。從而,進行第2光學膜圖案化製程S126是有效果的。In the above-described second optical film forming process S124, since the second optical
又,於本實施形態係使用洗淨液將第2光學膜82的剩餘部分去除,但第2光學膜82的剩餘部分的去除方法並未特別限定。例如,也可以採用蝕刻法。蝕刻,可以是濕式蝕刻、乾式蝕刻任一種。In addition, in the present embodiment, the remaining portion of the second
以下,於第2光學膜圖案化製程S126留下的第2光學膜82的一部分83,也稱作「第2光學膜83」。Hereinafter, the
根據本實施形態,如圖24所示,由第1光學膜63、中間膜72、第2光學膜83及保護膜92所構成之光學構件50,係在基板10上隔著間隔形成複數個。因而,光學構件50可以是多倒角。此外,由於光學構件50係選擇性地形成在畫素區域,所以被設在畫素區域周圍的端子可以適切地運作。According to this embodiment, as shown in FIG. 24 , a plurality of
<第1實施形態之光學構件形成製程之總結> 如以上說明,根據本實施形態,依序進行第1光學膜形成製程S121、中間膜形成製程S122、與第2光學膜形成製程S124。在第1光學膜63與第2光學膜83之間形成中間膜72。中間膜72,係保護第1光學膜63不使第1光學膜63損傷或異物等附著。因而,可以提升光學構件50的品質。由於光學構件50於製造途中暫時被中斷、且耗費時間才能恢復之場合,損傷或異物附著之風險高,所以特別有效果。<Summary of the optical member forming process of the first embodiment> As described above, according to this embodiment, the first optical film forming process S121, the intermediate film forming process S122, and the second optical film forming process S124 are sequentially performed. The
根據本實施形態,在中間膜形成製程S122之後、第2光學膜形成製程S124之前,進行使用僅覆蓋第1光學膜62的一部分63之中間膜72作為遮罩、並去除第1光學膜62的剩餘部分之第1光學膜圖案化製程S123。第1光學膜圖案化製程S123之間,可以用中間膜72保護第1光學膜62的一部分63、可以抑制第1光學膜62的一部分63的形狀崩壞。因而,可以提升光學構件50的品質。According to the present embodiment, after the intermediate film forming process S122 and before the second optical film forming process S124, the
根據本實施形態,於第1光學膜圖案化製程S123,使用溶解第1光學膜62之洗淨液。第1光學膜62的一部分63,由於以中間膜72覆蓋著,所以並未與洗淨液接觸,且不會因洗淨液造成型崩。另一方面,第1光學膜62的剩餘部分,由於與洗淨液接觸,所以會被洗淨液溶解、且被去除。According to the present embodiment, in the first optical film patterning process S123, a cleaning solution for dissolving the first
根據本實施形態,於第1光學膜形成製程S121,對於第1光學膜圖案化製程S123所使用的洗淨液,僅不溶解第1光學膜62的一部分63。因而,在第1光學膜圖案化製程S123,可以防止因洗淨液的環繞造成過度的去除,且可以確實地留下第1光學膜62的一部分63。According to the present embodiment, in the first optical film forming process S121, only a
根據本實施形態,於中間膜形成製程S122,藉由僅對第1光學膜62的一部分63塗布中間膜用塗布液71,而對於第1光學膜圖案化製程S123所使用的洗淨液僅不溶解第1光學膜62的一部分63。因而,在第1光學膜圖案化製程S123,可以防止因洗淨液的環繞造成過度的去除,且可以確實地留下第1光學膜62的一部分63。According to the present embodiment, in the intermediate film forming process S122, by applying the
根據本實施形態,進行形成保護第2光學膜83的保護膜92之保護膜形成製程S125。保護膜92,係在製造光學構件50後,可以保護第2光學膜83不使第2光學膜83損傷或異物等附著。因而,可以提升光學構件50的品質。According to the present embodiment, the protective film forming process S125 for forming the
根據本實施形態,在保護膜形成製程S125之後,進行使用僅覆蓋第2光學膜82的一部分83之保護膜92作為遮罩、並去除第2光學膜82的剩餘部分之第2光學膜圖案化製程S126。第2光學膜圖案化製程S126之間,可以用保護膜92保護第2光學膜82的一部分83,且可以抑制第2光學膜82的一部分83的形狀崩壞。因而,可以提升光學構件50的品質。According to the present embodiment, after the protective film forming process S125, the second optical film patterning in which the
根據本實施形態,於第2光學膜圖案化製程S126,使用溶解第2光學膜82之洗淨液。第2光學膜82的一部分83,由於以保護膜92覆蓋著,所以並未與洗淨液接觸,且不會因洗淨液造成型崩。另一方面,第2光學膜82的剩餘部分,由於與洗淨液接觸,所以會被洗淨液溶解、且被去除。According to the present embodiment, in the second optical film patterning process S126, a cleaning solution for dissolving the second
根據本實施形態,於第2光學膜形成製程S124,對於第2光學膜圖案化製程S126所使用的洗淨液,僅不溶解第2光學膜82的一部分83。因而,在第2光學膜圖案化製程S126,可以防止因洗淨液的環繞造成過度的去除,且可以確實地留下第2光學膜82的一部分83。According to the present embodiment, in the second optical film forming process S124, only a
根據本實施形態,於保護膜形成製程S125,藉由僅對第2光學膜82的一部分83塗布保護膜用塗布液91,而對於第2光學膜圖案化製程S126所使用的洗淨液僅不溶解第2光學膜82的一部分83。因而,在第2光學膜圖案化製程S126,可以防止因洗淨液的環繞造成過度的去除,且可以確實地留下第2光學膜82的一部分83。According to the present embodiment, in the protective film forming process S125, by applying the protective
<第2實施形態之光學構件形成製程> 相對於上述第1實施形態在中間膜形成製程S122之後進行第1光學膜圖案化製程S123,本實施形態在第1光學膜圖案化製程S123之後進行中間膜形成製程S122之點上不同。<Optical member forming process of the second embodiment> Compared with the above-mentioned first embodiment, the first optical film patterning process S123 is performed after the intermediate film forming process S122. In this embodiment, the intermediate film patterning process S123 is performed after the first optical film patterning process S123. The point of the film formation process S122 is different.
因此,本實施形態之中間膜72,不同於上述第1實施形態,並未發揮供留下第1光學膜62的一部分63且去除第1光學膜62的剩餘部分用之遮罩之作用。本實施形態之中間膜72,係發揮保護第1光學膜62的一部分63之作用不使第1光學膜62的一部分63損傷或異物等附著。Therefore, unlike the first embodiment described above, the
此外,相對於上述第1實施形態在保護膜形成製程S125之後進行第2光學膜圖案化製程S126,本實施形態在第2光學膜圖案化製程S126之後進行保護膜形成製程S125之點上不同。In addition, this embodiment is different in that the second optical film patterning process S126 is performed after the protective film forming process S125 in the first embodiment described above, and the protective film forming process S125 is performed after the second optical film patterning process S126.
因此,本實施形態之保護膜92,不同於上述第1實施形態,並未發揮供留下第2光學膜82的一部分83且去除第2光學膜82的剩餘部分用之遮罩之作用。本實施形態之保護膜92,係發揮保護第2光學膜82的一部分83之作用不使第2光學膜82的一部分83損傷或異物等附著。Therefore, unlike the first embodiment, the
以下,參照圖25等主要針對不同點加以說明。圖25係顯示依照第2實施形態的光學構件形成製程之流程圖。如圖25所示,光學構件形成製程S120,係依序具有第1光學膜形成製程S121、第1光學膜圖案化製程S123、中間膜形成製程S122、第2光學膜形成製程S124、第2光學膜圖案化製程S126、與保護膜形成製程S125。Hereinafter, the difference will be mainly described with reference to FIG. 25 and the like. FIG. 25 is a flowchart showing a process for forming an optical member according to the second embodiment. As shown in FIG. 25 , the optical member forming process S120 includes a first optical film forming process S121, a first optical film patterning process S123, an intermediate film forming process S122, a second optical film forming process S124, and a second optical film forming process S124. The film patterning process S126, and the protective film forming process S125.
又,也可以並不進行圖25所示的全部製程。例如詳細敘述於後,第1光學膜圖案化製程S123或第2光學膜圖案化製程S126,在將光學構件50在基板10上隔著間隔複數形成之場合是有效果的,而在將光學構件50在基板10上僅形成1個之場合則是省略亦可。針對後述的一部分不溶化的處理是同樣的。In addition, all the processes shown in FIG. 25 may not be performed. For example, as will be described in detail later, the first optical film patterning process S123 or the second optical film patterning process S126 is effective when the
此外,也可以進行圖25所示的製程以外的製程。例如,在第1光學膜形成製程S121之前,也可以為了改善第1光學膜對基板的密貼性,而進行將基板的第1光學膜被形成的面予以表面改質之製程。作為表面改質膜,可以形成矽烷耦合劑等之有機膜、或者氮化矽等之無機膜。In addition, a process other than the process shown in FIG. 25 may be performed. For example, before the 1st optical film formation process S121, in order to improve the adhesiveness of the 1st optical film with respect to a board|substrate, the process of surface-modifying the surface on which the 1st optical film of a board|substrate is formed may be performed. As the surface modification film, an organic film such as a silane coupling agent, or an inorganic film such as silicon nitride can be formed.
再者,也可以依序進行圖25所示之第1光學膜形成製程S121、第1光學膜圖案化製程S123及中間膜形成製程S122、以及圖12所示之第2光學膜形成製程S124、保護膜形成製程S125及第2光學膜圖案化製程S126。Furthermore, the first optical film forming process S121 shown in FIG. 25 , the first optical film patterning process S123 and the intermediate film forming process S122 , and the second optical film forming process S124 shown in FIG. 12 , The protective film forming process S125 and the second optical film patterning process S126 are performed.
再又,亦或依序進行圖12所示之第1光學膜形成製程S121、中間膜形成製程S122及第1光學膜圖案化製程S123、以及圖25所示之第2光學膜形成製程S124、第2光學膜圖案化製程S126及保護膜形成製程S125。Furthermore, the first optical film forming process S121 shown in FIG. 12 , the intermediate film forming process S122 , the first optical film patterning process S123 , and the second optical film forming process S124 shown in FIG. 25 , The second optical film patterning process S126 and the protective film forming process S125.
<第2實施形態之第1光學膜形成製程> 於圖25之第1光學膜形成製程S121,係如圖13~圖14所示,藉由在基板10上將包含液晶分子與溶媒的第1光學膜用塗布液61予以塗布並乾燥,形成第1光學膜62。第1光學膜62,例如1/4波長膜。<The first optical film forming process of the second embodiment> In the first optical film forming process S121 of FIG. 25 , as shown in FIGS. The
於本實施形態之第1光學膜形成製程S121,並不進行圖15所示之將第1光學膜62的一部分63不溶解之處理。該處理係於第1光學膜圖案化製程S123進行。In the 1st optical film formation process S121 of this embodiment, the process of insolubilizing a
<第2實施形態之第1光學膜圖案化製程> 於圖25的第1光學膜圖案化製程S123,在第1光學膜形成製程S121之後、中間膜形成製程S122之前,留下第1光學膜62的一部分63、去除第1光學膜62的剩餘部分。<The first optical film patterning process of the second embodiment> In the first optical film patterning process S123 of FIG. 25, after the first optical film forming process S121 and before the intermediate film forming process S122, the first optical film is left A
例如,於第1光學膜圖案化製程S123,如圖15所示對於洗淨液僅不溶解第1光學膜62的一部分63,之後,如圖26所示用洗淨液溶解第1光學膜62的剩餘部分。圖26係顯示依照第2實施形態的被去除未被不溶解的部分之第1光學膜之側面圖。For example, in the first optical film patterning process S123, as shown in FIG. 15, only a
洗淨液,例如邊以旋轉卡盤使基板10旋轉、邊對基板10供給。被供給到基板10的洗淨液,係利用離心力而擴散到基板10全體,且從基板10的外周緣被甩出。The cleaning liquid is supplied to the
第1光學膜62的一部分63,由於對洗淨液並不被溶解,所以不會因洗淨液造成型崩。另一方面,第1光學膜62的剩餘部分,由於對洗淨液未被不溶解,所以會被洗淨液溶解、且被去除。The
又,也可以藉由將洗淨液貯存在洗淨槽、將基板10浸漬在洗淨槽的洗淨液,而一邊留下第1光學膜62的一部分63、一邊溶解並去除第1光學膜62的剩餘部分。洗淨槽的洗淨液也可以用攪拌翼等攪拌。In addition, the first optical film may be dissolved and removed by storing the cleaning solution in the cleaning tank and immersing the
如圖26所示,於本實施形態,在形成中間膜72(參照圖28)之前,留下第1光學膜62的一部分63、去除第1光學膜62的剩餘部分,且圖案化第1光學膜62。As shown in FIG. 26 , in this embodiment, before forming the intermediate film 72 (see FIG. 28 ), a
於上述第1光學膜形成製程S121,由於是邊施加剪切應力邊塗布第1光學膜用塗布液61,所以僅對畫素區域塗布第1光學膜用塗布液61是困難的。從而,進行第1光學膜圖案化製程S123是有效果的。In the above-described first optical film forming process S121, since the first optical
以下,於第1光學膜圖案化製程S123留下的第1光學膜62的一部分63,也稱作「第1光學膜63」。Hereinafter, the
<第2實施形態之中間膜形成製程> 於圖25之中間膜形成製程S122,係如圖27~圖28所示,藉由將不同於第1光學膜用塗布液61之中間膜用塗布液71在第1光學膜63上予以塗布並乾燥,形成中間膜72。<Interlayer film formation process of the second embodiment> In the interlayer film formation process S122 of FIG. 25 , as shown in FIGS. 27 to 28 , by applying a coating solution for the interlayer film different from the
圖27係圖示依照第2實施形態的被塗布在第1光學膜上之中間膜用塗布液的液膜。圖28係圖示依照第2實施形態之利用中間膜用塗布液的液膜乾燥而被形成之中間膜。FIG. 27 shows a liquid film of a coating liquid for an intermediate film applied on the first optical film according to the second embodiment. FIG. 28 shows an intermediate film formed by drying the liquid film of the coating liquid for an intermediate film according to the second embodiment.
如圖27所示,於中間膜形成製程S122,在第1光學膜63被形成的基板10上自塗布噴嘴70塗布中間膜用塗布液71。塗布噴嘴70,可以是噴墨方式,具有複數朝下面吐出中間膜用塗布液71液滴之吐出噴嘴。As shown in FIG. 27 , in the intermediate film forming process S122 , the
藉由邊使塗布噴嘴70與基板10相對地移動、邊自塗布噴嘴70將中間膜用塗布液71液滴吐出,而僅對第1光學膜63及其附近(例如僅畫素區域及其附近)選擇性地塗布中間膜用塗布液71。By moving the
中間膜用塗布液71被塗布在第1光學膜63上。因此,形成第1光學膜63之液晶分子,對中間膜用塗布液71的溶媒,可以是具有不溶性。利用中間膜用塗布液71的塗布可以防止第1光學膜63溶解。The
中間膜用塗布液71,係包含形成中間膜72的有機材料、與溶解該有機材料之溶媒。形成中間膜72之有機材料,係包含對於被塗布在中間膜72上的第2光學膜用塗布液81(參照圖29)的溶媒具不溶性之高分子等。The
作為中間膜用塗布液71,例如,可以使用熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等。具體而言,可以使用油性瓷漆塗料、鄰苯二甲酸樹脂塗料等。As the
熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等,由於是利用熱硬化或化學反應或者乾燥硬化而被高分子化,而可以形成緻密的中間膜72。Thermosetting clear paint, chemical reaction type clear paint, drying curing clear paint, etc. are polymerized by thermal curing, chemical reaction, or drying curing, so that a dense
中間膜用塗布液71,如圖27所示,可以被塗布不僅覆蓋第1光學膜63的主表面、還有第1光學膜63的端面。用中間膜72可以保護第1光學膜63,不僅第1光學膜63的主表面、還有第1光學膜63的端面不受損傷或異物等附著。As shown in FIG. 27 , the
中間膜用塗布液71被塗布之領域,可以被限定在基板10上的畫素區域及其附近。The area where the
又,由於限定中間膜用塗布液71被塗布之領域,所以在基板10上黏貼薄膜等遮罩亦可。該遮罩,可以是在與第1光學膜63之間形成間隙,而在之後被剝離時不損傷第1光學膜63。Moreover, since the area where the
如圖28所示,於中間膜形成製程S122,將在基板10上被塗布的中間膜用塗布液71的液膜(參照圖27)予以乾燥,形成中間膜72。從中間膜用塗布液71的液膜中去除溶媒,形成中間膜72。As shown in FIG. 28 , in the intermediate film forming process S122 , the liquid film (see FIG. 27 ) of the coating liquid for
中間膜72,不同於第1光學膜63,係具有光學均向性。中間膜72的可見光透過率最好是95%以上。此外,中間膜72之膜厚,最好是10μm以下。此外,中間膜72的殘留應力,為了抑制光學構件的變形,而愈小愈好。Unlike the first
中間膜72,不僅覆蓋第1光學膜63的主表面、還有第1光學膜63的端面。中間膜72,係發揮保護第1光學膜63之作用,不使第1光學膜63損傷或異物等附著。中間膜72之鉛筆硬度,最好是2H以上。由於光學構件於製造途中暫時被中斷、且耗費時間才能恢復之場合,損傷或異物附著之風險高,所以特別有效果。The
中間膜72僅在基板10上的畫素區域及其附近被形成,且在基板10上隔著間隔被形成複數個。又,設在畫素區域周邊的端子不必取出之場合,也可以在基板10的約略全體形成中間膜72。在將第2光學膜用塗布液81塗布於中間膜72上時,第2光學膜用塗布液81的液晶分子配向控制性佳。The
<第2實施形態之第2光學膜形成製程> 於圖25之第2光學膜形成製程S124,如圖29~圖30所示,藉由將包含液晶分子與溶媒的第2光學膜用塗布液81在中間膜72上予以塗布並乾燥,而形成第2光學膜82。第2光學膜82,係例如直線偏光膜。<The second optical film forming process of the second embodiment> In the second optical film forming process S124 of FIG. 25 , as shown in FIGS. 29 to 30 , by applying a coating solution for the second optical film containing liquid crystal molecules and a solvent 81 is coated on the
圖29係顯示依照第2實施形態的被塗布在中間膜上之第2光學膜用塗布液的液膜之側面圖。圖30係顯示依照第2實施形態之利用第2光學膜用塗布液的液膜乾燥而被形成之第2光學膜之側面圖。Fig. 29 is a side view showing a liquid film of the second optical film coating liquid applied on the intermediate film according to the second embodiment. 30 is a side view showing the second optical film formed by drying the liquid film of the coating liquid for the second optical film according to the second embodiment.
如圖29所示,於第2光學膜形成製程S124,在基板10上自塗布噴嘴80塗布第2光學膜用塗布液81。塗布噴嘴80,係例如在下面具有狹縫狀吐出口之狹縫式塗布裝置。As shown in FIG. 29 , in the second optical film forming process S124 , the
第2光學膜用塗布液81被塗布在中間膜72上。因此,形成中間膜72之有機材料,對第2光學膜用塗布液81的溶媒,可以是具有不溶性。利用第2光學膜用塗布液81的塗布可以防止中間膜72溶解。The second optical
又,於本實施形態可以在第2光學膜用塗布液81之塗布使用狹縫式塗布裝置,也可以使用浸入式塗布裝置等。可以對第2光學膜用塗布液81施加剪切應力,且能控制該剪切應力的作用方向即可。In addition, in this embodiment, a slit coating apparatus may be used for the coating of the
如圖30所示,於第2光學膜形成製程S124,將在基板10上被塗布的第2光學膜用塗布液81的液膜(參照圖29)予以乾燥,形成第2光學膜82。從第2光學膜用塗布液81的液膜中去除溶媒,適切地維持液晶分子的配向。第2光學膜82,係例如直線偏光膜。As shown in FIG. 30 , in the second optical film forming process S124 , the liquid film (see FIG. 29 ) of the second optical
<第2實施形態之第2光學膜圖案化製程> 於圖25的第2光學膜圖案化製程S126,在第2光學膜形成製程S124之後、保護膜形成製程S125之前,留下第2光學膜82的一部分83、去除第2光學膜82的剩餘部分。<The second optical film patterning process of the second embodiment> In the second optical film patterning process S126 of FIG. 25, after the second optical film forming process S124 and before the protective film forming process S125, the second optical film is left A
例如,於第2光學膜圖案化製程S126,如圖31所示對於洗淨液僅不溶解第2光學膜82的一部分83,之後,如圖32所示用洗淨液溶解第2光學膜82的剩餘部分。For example, in the second optical film patterning process S126, as shown in FIG. 31, only a
圖31係顯示依照第2實施形態的一部分不溶解之第2光學膜之側面圖。圖32係顯示依照第2實施形態的被去除未被不溶解的部分之第2光學膜之側面圖。Fig. 31 is a side view showing a partially insoluble second optical film according to the second embodiment. Fig. 32 is a side view showing the second optical film according to the second embodiment from which the portion that is not insoluble has been removed.
如圖31所示,於第2光學膜圖案化製程S126,對於洗淨液僅不溶解第2光學膜82的一部分83。作為洗淨液,可以使用與第2光學膜用塗布液81的溶媒相同者,例如可以使用水。該場合,進行對水的不溶解。As shown in FIG. 31, in the second optical film patterning process S126, only a
不溶解第2光學膜82的一部分83之定著液120,係從例如噴墨方式的塗布噴嘴121被吐出。塗布噴嘴121,係具有複數朝下面吐出定著液120液滴之吐出噴嘴。The fixing liquid 120 that does not dissolve the
藉由邊使塗布噴嘴121與基板10相對地移動、邊自塗布噴嘴121將定著液120液滴吐出,而對第2光學膜82的一部分83選擇性地塗布定著液120。藉此,不溶解第2光學膜82的一部分83。The fixing
塗布定著液120之領域,可以是例如畫素區域。The area where the fixing
如圖32所示,於第2光學膜圖案化製程S126,僅留下第2光學膜82的一部分83、去除第2光學膜82的剩餘部分。在第2光學膜82的剩餘部分之去除,可以使用例如洗淨液。As shown in FIG. 32 , in the second optical film patterning process S126 , only a
洗淨液,例如邊以旋轉卡盤使基板10旋轉、邊對基板10供給。被供給到基板10的洗淨液,係利用離心力而擴散到基板10全體,且從基板10的外周緣被甩出。The cleaning liquid is supplied to the
第2光學膜82的一部分83,由於對洗淨液並不被溶解,所以不會因洗淨液造成型崩。另一方面,第2光學膜82的剩餘部分,由於對洗淨液未被不溶解,所以會被洗淨液溶解、且被去除。A
又,也可以藉由將洗淨液貯存在洗淨槽、將基板10浸漬在洗淨槽的洗淨液,而一邊留下第2光學膜82的一部分83、一邊溶解並去除第2光學膜82的剩餘部分。洗淨槽的洗淨液也可以用攪拌翼等攪拌。In addition, the second optical film may be dissolved and removed while the
如圖32所示,於本實施形態,在形成保護膜92(參照圖34)之前,留下第2光學膜82的一部分83、去除第2光學膜82的剩餘部分,且圖案化第2光學膜82。As shown in FIG. 32, in this embodiment, before forming the protective film 92 (see FIG. 34), a
於上述第2光學膜形成製程S124,由於是邊施加剪切應力邊塗布第2光學膜用塗布液81,所以僅對畫素區域塗布第2光學膜用塗布液81是困難的。從而,進行第2光學膜圖案化製程S126是有效果的。In the above-described second optical film forming process S124, since the second optical
以下,於第2光學膜圖案化製程S126留下的第2光學膜82的一部分83,也稱作「第2光學膜83」。Hereinafter, the
<第2實施形態之保護膜形成製程> 於圖25之保護膜形成製程S125,係如圖33~圖34所示,藉由將不同於第2光學膜用塗布液81之保護膜用塗布液91在第2光學膜83上予以塗布並乾燥,形成保護膜92。<Protective film forming process of the second embodiment> In the protective film forming process S125 of FIG. 25, as shown in FIGS. 33 to 34, a coating liquid for a protective film different from the coating liquid for a second
圖33係顯示依照第2實施形態的被塗布在第2光學膜上之保護膜用塗布液的液膜之側面圖。圖34係顯示依照第2實施形態之利用保護膜用塗布液的液膜乾燥而被形成之保護膜之側面圖。33 is a side view showing the liquid film of the coating liquid for protective film applied on the second optical film according to the second embodiment. 34 is a side view showing a protective film formed by drying the liquid film of the coating liquid for protective film according to the second embodiment.
如圖33所示,於保護膜形成製程S125,在第2光學膜83被形成的基板10上自塗布噴嘴90塗布保護膜用塗布液91。塗布噴嘴90,可以是噴墨方式,具有複數朝下面吐出保護膜用塗布液91液滴之吐出噴嘴。As shown in FIG. 33 , in the protective film forming process S125 , the
藉由邊使塗布噴嘴90與基板10相對地移動、邊自塗布噴嘴90將保護膜用塗布液91液滴吐出,而僅對第2光學膜83及其附近(例如僅畫素區域及其附近)選擇性地塗布保護膜用塗布液91。By moving the
保護膜用塗布液91被塗布在第2光學膜83上。因此,形成第2光學膜83之液晶分子,對保護膜用塗布液91的溶媒,可以是具有不溶性。利用保護膜用塗布液91的塗布可以防止第2光學膜83溶解。The
保護膜用塗布液91,係包含形成保護膜92的有機材料、與溶解該有機材料之溶媒。The
作為保護膜用塗布液91,例如,可以使用熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等。具體而言,可以使用油性瓷漆塗料、鄰苯二甲酸樹脂塗料等。As the
熱硬化型透明塗料、化學反應型透明塗料、乾燥硬化型透明塗料等,由於是利用熱硬化或化學反應或者乾燥硬化而被高分子化,而可以形成緻密的保護膜92。Thermosetting clear coatings, chemical reaction clear coatings, drying curing clear coatings, etc., are polymerized by thermal curing, chemical reaction, or drying curing, so that a dense
保護膜用塗布液91,如圖33所示,可以被塗布不僅覆蓋第2光學膜83的主表面、還有第2光學膜83的端面。用保護膜92可以保護第2光學膜83,不僅第2光學膜83的主表面、還有第2光學膜83的端面不受損傷或異物等附著。As shown in FIG. 33 , the protective
又,保護膜用塗布液91,於圖33所示並未覆蓋中間膜72的端面,但也可以被塗布覆蓋中間膜72的端面。In addition, although the
保護膜用塗布液91被塗布之領域,可以被限定在基板10上的畫素區域及其附近。The area where the
又,由於限定保護膜用塗布液91被塗布之領域,所以在基板10上黏貼薄膜等遮罩亦可。該遮罩,可以是在與第2光學膜83之間形成間隙,而在之後被剝離時不損傷第2光學膜83。In addition, since the area where the
如圖34所示,於保護膜形成製程S125,將在基板10上被塗布的保護膜用塗布液91的液膜(參照圖33)予以乾燥,形成保護膜92。從保護膜用塗布液91的液膜中去除溶媒,形成保護膜92。As shown in FIG. 34 , in the protective film forming step S125 , the liquid film (see FIG. 33 ) of the protective
保護膜92,不同於第2光學膜83,係具有光學均向性。保護膜92的可見光透過率最好是95%以上。此外,保護膜92之膜厚,最好是10μm以下。此外,保護膜92的殘留應力,為了抑制光學構件的變形,而愈小愈好。The
保護膜92,不僅覆蓋第2光學膜83的主表面、還有第2光學膜83的端面。保護膜92,係發揮保護第2光學膜83之作用,不使第2光學膜83損傷或異物等附著。保護膜92之鉛筆硬度,最好是2H以上。The
保護膜92僅在基板10上的畫素區域及其附近被形成,且在基板10上隔著間隔被形成複數個。又,設在畫素區域周邊的端子不必取出之場合,也可以在基板10的約略全體形成保護膜92。The
又,本實施形態之保護膜92,係藉由將保護膜用塗布液91在第2光學膜83上塗布並乾燥而形成,但以薄膜的形態被黏貼在第2光學膜83亦可。In addition, although the
根據本實施形態,如圖34所示,由第1光學膜63、中間膜72、第2光學膜83及保護膜92所構成之光學構件50,係在基板10上隔著間隔形成複數個。因而,光學構件50可以是多倒角。此外,由於光學構件50係選擇性地形成在畫素區域及其附近,所以被設在畫素區域周圍的端子可以適切地運作。According to this embodiment, as shown in FIG. 34 , a plurality of
<第2實施形態之光學構件形成製程之總結> 如以上說明,根據本實施形態,依序進行第1光學膜形成製程S121、中間膜形成製程S122、與第2光學膜形成製程S124。在第1光學膜63與第2光學膜83之間形成中間膜72。中間膜72,係保護第1光學膜63不使第1光學膜63損傷或異物等附著。因而,可以提升光學構件50的品質。由於光學構件50於製造途中暫時被中斷、且耗費時間才能恢復之場合,損傷或異物附著之風險高,所以特別有效果。<Summary of the optical member forming process of the second embodiment> As described above, according to this embodiment, the first optical film forming process S121, the intermediate film forming process S122, and the second optical film forming process S124 are sequentially performed. The
根據本實施形態,在第1光學膜形成製程S121之後、中間膜形成製程S122之前,進行留下第1光學膜62的一部分63、去除第1光學膜62的剩餘部分之第1光學膜圖案化製程S123。因而,可以使中間膜72不僅覆蓋於第1光學膜圖案化製程S123後所留下的第1光學膜63的主表面、還有第1光學膜63的端面。According to the present embodiment, after the first optical film forming process S121 and before the intermediate film forming process S122, the first optical film patterning in which
根據本實施形態,於第1光學膜圖案化製程S123,對於溶解第1光學膜62的洗淨液僅不溶解第1光學膜62的一部分63,之後,用洗淨液溶解第1光學膜62的剩餘部分。第1光學膜62的一部分63,由於對洗淨液並不被溶解,所以不會因洗淨液造成型崩。另一方面,第1光學膜62的剩餘部分,由於對洗淨液未被不溶解,所以會被洗淨液溶解、且被去除。According to the present embodiment, in the first optical film patterning process S123, only a
根據本實施形態,於中間膜形成製程S122,以覆蓋第1光學膜63的主表面及第1光學膜63的端面之方式形成中間膜72。中間膜72可以保護第1光學膜63,不僅第1光學膜63的主表面、還有第1光學膜63的端面不受損傷或異物等附著。因而,可以提升光學構件50的品質。由於光學構件50於製造途中暫時被中斷、且耗費時間才能恢復之場合,損傷或異物附著之風險高,所以特別有效果。According to the present embodiment, in the intermediate film forming step S122 , the
根據本實施形態,進行形成保護第2光學膜83的保護膜92之保護膜形成製程S125。保護膜92,係在製造光學構件50後,可以保護第2光學膜83不使第2光學膜83損傷或異物等附著。因而,可以提升光學構件50的品質。According to the present embodiment, the protective film forming process S125 for forming the
根據本實施形態,在第2光學膜形成製程S124之後、保護膜形成製程S125之前,進行留下第2光學膜82的一部分83、去除第2光學膜82的剩餘部分之第2光學膜圖案化製程S126。因而,可以使保護膜92不僅覆蓋於第2光學膜圖案化製程S126後所留下的第2光學膜83的主表面、還有第2光學膜83的端面。According to the present embodiment, after the second optical film forming process S124 and before the protective film forming process S125, the second optical film patterning in which
根據本實施形態,於第2光學膜圖案化製程S126,對於溶解第2光學膜82的洗淨液僅不溶解第2光學膜82的一部分83,之後,用洗淨液溶解第2光學膜82的剩餘部分。第2光學膜82的一部分83,由於對洗淨液並不被溶解,所以不會因洗淨液造成型崩。另一方面,第2光學膜82的剩餘部分,由於對洗淨液未被不溶解,所以會被洗淨液溶解、且被去除。According to the present embodiment, in the second optical film patterning process S126, only a
根據本實施形態,於保護膜形成製程S125,以覆蓋第2光學膜83的主表面及第2光學膜83的端面之方式形成保護膜92。保護膜92可以保護第2光學膜83,不僅第2光學膜83的主表面、還有第2光學膜83的端面不受損傷或異物等附著。因而,可以提升光學構件50的品質。由於光學構件50於製造途中暫時被中斷、且耗費時間才能恢復之場合,損傷或異物附著之風險高,所以特別有效果。According to this embodiment, in the protective film forming step S125 , the
<變形、改良> 以上,說明了有機電致發光顯示器的實施形態,但本發明並不限定於上述實施形態等,在申請專利範圍所記載的本發明的要旨的範圍內,可以進行種種的變形、改良。<Modifications and Improvements> The embodiments of the organic electroluminescence display have been described above, but the present invention is not limited to the above-described embodiments and the like, and various modifications are possible within the scope of the gist of the present invention described in the scope of claims. , improve.
例如,光學構件50,於上述實施形態包含第1光學膜63、中間膜72、第2光學膜83及保護膜92,但本發明並不以此為限。光學構件50包含液晶分子配向的光學膜即可,光學膜的數量也並未限定。For example, the
10‧‧‧基板13‧‧‧有機發光二極體30‧‧‧密封層40‧‧‧觸摸感應器41‧‧‧第1金屬膜43‧‧‧絕緣膜45‧‧‧第2金屬層47‧‧‧觸摸感應器保護膜50‧‧‧光學構件61‧‧‧第1光學膜用塗布液62‧‧‧第1光學膜63‧‧‧第1光學膜71‧‧‧中間膜用塗布液72‧‧‧中間膜81‧‧‧第2光學膜用塗布液82‧‧‧第2光學膜83‧‧‧第2光學膜91‧‧‧保護膜用塗布液92‧‧‧保護膜10‧‧‧
圖1係顯示依照一實施形態的有機電致發光顯示器之平面圖。 圖2係顯示依照一實施形態的有機電致發光顯示器的重要部分之剖面圖。 圖3係顯示依照一實施形態的有機電致發光顯示器之製造方法之流程圖。 圖4係顯示依照一實施形態的觸摸感應器形成製程之流程圖。 圖5係顯示依照一實施形態的被形成在基板上之第1金屬膜之剖面圖。 圖6係顯示依照一實施形態的被形成在第1金屬膜上之光阻膜之剖面圖。 圖7係顯示依照一實施形態的曝光及顯像後的光阻膜之剖面圖。 圖8係顯示依照一實施形態的蝕刻後的第1金屬膜之剖面圖。 圖9係顯示依照一實施形態的去除光阻膜後的第1金屬膜之剖面圖。 圖10係顯示依照一實施形態的被形成在第1金屬膜上之絕緣膜之剖面圖。 圖11係顯示依照一實施形態的被形成在絕緣膜上之第2金屬膜的一部分去除後的狀態之平面圖。 圖12係顯示依照第1實施形態的光學構件形成製程之流程圖。 圖13係顯示依照第1實施形態的被塗布在基板上之第1光學膜用塗布液的液膜之 側面圖。 圖14係顯示依照第1實施形態之利用第1光學膜用塗布液的液膜乾燥而被形成之第1光學膜之側面圖。 圖15係顯示依照第1實施形態的一部分不溶化之第1光學膜之側面圖。 圖16係顯示依照第1實施形態的被塗布在第1光學膜上之中間膜用塗布液的液膜之側面圖。 圖17係顯示依照第1實施形態之利用中間膜用塗布液的液膜乾燥而被形成之中間膜之側面圖。 圖18係顯示依照第1實施形態的被去除未以中間膜覆蓋的部分之第1光學膜之側面圖。 圖19係顯示依照第1實施形態的被塗布在中間膜上之第2光學膜用塗布液的液膜之側面圖。 圖20係顯示依照第1實施形態之利用第2光學膜用塗布液的液膜乾燥而被形成之第2光學膜之側面圖。 圖21係顯示依照第1實施形態的一部分不溶化之第2光學膜之側面圖。 圖22係顯示依照第1實施形態的被塗布在第2光學膜上之保護膜用塗布液的液膜之側面圖。 圖23係顯示依照第1實施形態之利用保護膜用塗布液的液膜乾燥而被形成之保護膜之側面圖。 圖24係顯示依照第1實施形態的被去除未以保護膜覆蓋的部分之第2光學膜之側面圖。 圖25係顯示依照第2實施形態的光學構件形成製程之流程圖。 圖26係顯示依照第2實施形態的被去除未被不溶解的部分之第1光學膜之側面圖。 圖27係顯示依照第2實施形態的被塗布在第1光學膜上之中間膜用塗布液的液膜之側面圖。 圖28係顯示依照第2實施形態之利用中間膜用塗布液的液膜乾燥而被形成之中間膜之側面圖。 圖29係顯示依照第2實施形態的被塗布在中間膜上之第2光學膜用塗布液的液膜之側面圖。 圖30係顯示依照第2實施形態之利用第2光學膜用塗布液的液膜乾燥而被形成之第2光學膜之側面圖。 圖31係顯示依照第2實施形態的一部分不溶解之第2光學膜之側面圖。 圖32係顯示依照第2實施形態的被去除未被不溶解的部分之第2光學膜之側面圖。 圖33係顯示依照第2實施形態的被塗布在第2光學膜上之保護膜用塗布液的液膜之側面圖。 圖34係顯示依照第2實施形態之利用保護膜用塗布液的液膜乾燥而被形成之保護膜之側面圖。FIG. 1 is a plan view showing an organic electroluminescent display according to an embodiment. FIG. 2 is a cross-sectional view showing an important part of an organic electroluminescent display according to an embodiment. FIG. 3 is a flow chart showing a method of manufacturing an organic electroluminescent display according to an embodiment. FIG. 4 is a flowchart showing a process for forming a touch sensor according to one embodiment. Fig. 5 is a cross-sectional view showing a first metal film formed on a substrate according to an embodiment. FIG. 6 is a cross-sectional view showing a photoresist film formed on the first metal film according to an embodiment. 7 is a cross-sectional view showing a photoresist film after exposure and development according to one embodiment. FIG. 8 is a cross-sectional view showing the first metal film after etching according to an embodiment. FIG. 9 is a cross-sectional view showing the first metal film after removing the photoresist film according to one embodiment. Fig. 10 is a cross-sectional view showing an insulating film formed on the first metal film according to an embodiment. FIG. 11 is a plan view showing a state in which a part of the second metal film formed on the insulating film is removed according to one embodiment. Fig. 12 is a flowchart showing the optical member forming process according to the first embodiment. Fig. 13 is a side view showing the liquid film of the coating liquid for the first optical film applied on the substrate according to the first embodiment. Fig. 14 is a side view showing the first optical film formed by drying the liquid film of the coating liquid for the first optical film according to the first embodiment. Fig. 15 is a side view showing a partially insolubilized first optical film according to the first embodiment. Fig. 16 is a side view showing a liquid film of a coating liquid for an intermediate film applied on the first optical film according to the first embodiment. Fig. 17 is a side view showing the interlayer film formed by drying the liquid film of the coating liquid for interlayer film according to the first embodiment. Fig. 18 is a side view showing the first optical film according to the first embodiment from which the portion not covered with the interlayer film is removed. Fig. 19 is a side view showing the liquid film of the second optical film coating liquid applied on the intermediate film according to the first embodiment. Fig. 20 is a side view showing the second optical film formed by drying the liquid film of the coating liquid for the second optical film according to the first embodiment. Fig. 21 is a side view showing a partially insolubilized second optical film according to the first embodiment. Fig. 22 is a side view showing the liquid film of the coating liquid for protective film applied on the second optical film according to the first embodiment. Fig. 23 is a side view showing a protective film formed by drying the liquid film of the coating liquid for protective film according to the first embodiment. Fig. 24 is a side view showing the second optical film from which the portion not covered with the protective film is removed according to the first embodiment. Fig. 25 is a flowchart showing the optical member forming process according to the second embodiment. Fig. 26 is a side view showing the first optical film according to the second embodiment from which the portion that is not insoluble has been removed. Fig. 27 is a side view showing the liquid film of the coating liquid for the interlayer film applied on the first optical film according to the second embodiment. Fig. 28 is a side view showing an interlayer film formed by drying the liquid film of the coating liquid for interlayer film according to the second embodiment. Fig. 29 is a side view showing the liquid film of the second optical film coating liquid applied on the intermediate film according to the second embodiment. Fig. 30 is a side view showing the second optical film formed by drying the liquid film of the coating liquid for the second optical film according to the second embodiment. Fig. 31 is a side view showing a partially insoluble second optical film according to the second embodiment. Fig. 32 is a side view showing the second optical film according to the second embodiment from which the portion that is not insoluble has been removed. Fig. 33 is a side view showing the liquid film of the coating liquid for protective film applied on the second optical film according to the second embodiment. Fig. 34 is a side view showing a protective film formed by drying the liquid film of the coating liquid for protective film according to the second embodiment.
10‧‧‧基板 10‧‧‧Substrate
12‧‧‧TFT層 12‧‧‧TFT Layer
13‧‧‧有機發光二極體 13‧‧‧Organic Light Emitting Diodes
18‧‧‧平坦化層 18‧‧‧Planarization layer
19‧‧‧接觸塞 19‧‧‧Contact plug
21‧‧‧畫素電極 21‧‧‧Pixel electrode
22‧‧‧對向電極 22‧‧‧Counter electrode
23‧‧‧有機層 23‧‧‧Organic layer
24、25‧‧‧電子注入層 24, 25‧‧‧Electron injection layer
26‧‧‧發光層 26‧‧‧Light Emitting Layer
27‧‧‧正電孔輸送層 27‧‧‧Positive hole transport layer
28‧‧‧正電孔注入層 28‧‧‧Positive hole injection layer
30‧‧‧密封層 30‧‧‧Sealing layer
40‧‧‧觸摸感應器 40‧‧‧Touch Sensor
41‧‧‧第1金屬膜 41‧‧‧First Metal Film
43‧‧‧絕緣膜 43‧‧‧Insulating film
45‧‧‧第2金屬層 45‧‧‧Second metal layer
47‧‧‧觸摸感應器保護膜 47‧‧‧Touch Sensor Protective Film
50‧‧‧光學構件 50‧‧‧Optical Components
63‧‧‧第1光學膜 63‧‧‧First Optical Film
72‧‧‧中間膜 72‧‧‧Interlayer
83‧‧‧第2光學膜 83‧‧‧Second Optical Film
92‧‧‧保護膜 92‧‧‧Protective film
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