TWI758451B - 半導體裝置的製造方法及積層板片 - Google Patents

半導體裝置的製造方法及積層板片 Download PDF

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Publication number
TWI758451B
TWI758451B TW107110707A TW107110707A TWI758451B TW I758451 B TWI758451 B TW I758451B TW 107110707 A TW107110707 A TW 107110707A TW 107110707 A TW107110707 A TW 107110707A TW I758451 B TWI758451 B TW I758451B
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TW
Taiwan
Prior art keywords
resin composition
film
layer
composition layer
mentioned
Prior art date
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TW107110707A
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English (en)
Chinese (zh)
Other versions
TW201911430A (zh
Inventor
根津裕介
渡邉康貴
杉野貴志
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日商琳得科股份有限公司
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Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW201911430A publication Critical patent/TW201911430A/zh
Application granted granted Critical
Publication of TWI758451B publication Critical patent/TWI758451B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
TW107110707A 2017-08-04 2018-03-28 半導體裝置的製造方法及積層板片 TWI758451B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??PCT/JP2017/028335 2017-08-04
PCT/JP2017/028335 WO2019026267A1 (ja) 2017-08-04 2017-08-04 半導体装置の製造方法および積層シート
WOPCT/JP2017/028335 2017-08-04

Publications (2)

Publication Number Publication Date
TW201911430A TW201911430A (zh) 2019-03-16
TWI758451B true TWI758451B (zh) 2022-03-21

Family

ID=65233669

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107110707A TWI758451B (zh) 2017-08-04 2018-03-28 半導體裝置的製造方法及積層板片

Country Status (5)

Country Link
JP (1) JP7022133B2 (ja)
KR (1) KR20200033222A (ja)
CN (1) CN110800092A (ja)
TW (1) TWI758451B (ja)
WO (1) WO2019026267A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074184A (ja) * 2011-09-28 2013-04-22 Nitto Denko Corp 半導体装置の製造方法
JP2013251368A (ja) * 2012-05-31 2013-12-12 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置
JP2014039017A (ja) * 2012-07-17 2014-02-27 Nitto Denko Corp 半導体装置の製造方法
JP2016213321A (ja) * 2015-05-08 2016-12-15 日立化成株式会社 半導体装置の製造方法及び半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5042297Y1 (ja) 1968-10-08 1975-12-01
JP5001957B2 (ja) * 2009-01-27 2012-08-15 パナソニック株式会社 半導体装置及び半導体装置実装基板
JP2016096308A (ja) 2014-11-17 2016-05-26 日東電工株式会社 半導体装置の製造方法
JP2017045891A (ja) * 2015-08-27 2017-03-02 日立化成株式会社 半導体装置及びそれを製造する方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074184A (ja) * 2011-09-28 2013-04-22 Nitto Denko Corp 半導体装置の製造方法
JP2013251368A (ja) * 2012-05-31 2013-12-12 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置
JP2014039017A (ja) * 2012-07-17 2014-02-27 Nitto Denko Corp 半導体装置の製造方法
JP2016213321A (ja) * 2015-05-08 2016-12-15 日立化成株式会社 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
KR20200033222A (ko) 2020-03-27
WO2019026267A1 (ja) 2019-02-07
JPWO2019026267A1 (ja) 2020-06-18
JP7022133B2 (ja) 2022-02-17
TW201911430A (zh) 2019-03-16
CN110800092A (zh) 2020-02-14

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