TWI758451B - 半導體裝置的製造方法及積層板片 - Google Patents
半導體裝置的製造方法及積層板片 Download PDFInfo
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- TWI758451B TWI758451B TW107110707A TW107110707A TWI758451B TW I758451 B TWI758451 B TW I758451B TW 107110707 A TW107110707 A TW 107110707A TW 107110707 A TW107110707 A TW 107110707A TW I758451 B TWI758451 B TW I758451B
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- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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??PCT/JP2017/028335 | 2017-08-04 | ||
PCT/JP2017/028335 WO2019026267A1 (ja) | 2017-08-04 | 2017-08-04 | 半導体装置の製造方法および積層シート |
WOPCT/JP2017/028335 | 2017-08-04 |
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TW201911430A TW201911430A (zh) | 2019-03-16 |
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JP (1) | JP7022133B2 (ja) |
KR (1) | KR20200033222A (ja) |
CN (1) | CN110800092A (ja) |
TW (1) | TWI758451B (ja) |
WO (1) | WO2019026267A1 (ja) |
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JP2013074184A (ja) * | 2011-09-28 | 2013-04-22 | Nitto Denko Corp | 半導体装置の製造方法 |
JP2013251368A (ja) * | 2012-05-31 | 2013-12-12 | Hitachi Chemical Co Ltd | 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置 |
JP2014039017A (ja) * | 2012-07-17 | 2014-02-27 | Nitto Denko Corp | 半導体装置の製造方法 |
JP2016213321A (ja) * | 2015-05-08 | 2016-12-15 | 日立化成株式会社 | 半導体装置の製造方法及び半導体装置 |
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JPS5042297Y1 (ja) | 1968-10-08 | 1975-12-01 | ||
JP5001957B2 (ja) * | 2009-01-27 | 2012-08-15 | パナソニック株式会社 | 半導体装置及び半導体装置実装基板 |
JP2016096308A (ja) | 2014-11-17 | 2016-05-26 | 日東電工株式会社 | 半導体装置の製造方法 |
JP2017045891A (ja) * | 2015-08-27 | 2017-03-02 | 日立化成株式会社 | 半導体装置及びそれを製造する方法 |
-
2017
- 2017-08-04 KR KR1020197032505A patent/KR20200033222A/ko not_active Application Discontinuation
- 2017-08-04 CN CN201780092553.6A patent/CN110800092A/zh not_active Withdrawn
- 2017-08-04 JP JP2019533851A patent/JP7022133B2/ja active Active
- 2017-08-04 WO PCT/JP2017/028335 patent/WO2019026267A1/ja active Application Filing
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013074184A (ja) * | 2011-09-28 | 2013-04-22 | Nitto Denko Corp | 半導体装置の製造方法 |
JP2013251368A (ja) * | 2012-05-31 | 2013-12-12 | Hitachi Chemical Co Ltd | 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置 |
JP2014039017A (ja) * | 2012-07-17 | 2014-02-27 | Nitto Denko Corp | 半導体装置の製造方法 |
JP2016213321A (ja) * | 2015-05-08 | 2016-12-15 | 日立化成株式会社 | 半導体装置の製造方法及び半導体装置 |
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KR20200033222A (ko) | 2020-03-27 |
JPWO2019026267A1 (ja) | 2020-06-18 |
CN110800092A (zh) | 2020-02-14 |
JP7022133B2 (ja) | 2022-02-17 |
TW201911430A (zh) | 2019-03-16 |
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