TWI757081B - Pixel array substrate - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000003466 welding Methods 0.000 claims description 52
- 239000010409 thin film Substances 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 10
- 239000007769 metal material Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000002161 passivation Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 239000010432 diamond Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- RQIPKMUHKBASFK-UHFFFAOYSA-N [O-2].[Zn+2].[Ge+2].[In+3] Chemical compound [O-2].[Zn+2].[Ge+2].[In+3] RQIPKMUHKBASFK-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- -1 aluminum tin oxide Chemical compound 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Abstract
Description
本發明是有關於一種畫素陣列基板。The present invention relates to a pixel array substrate.
一般而言,顯示面板的訊號線發生斷線的情況,會對顯示面板進行修補,以提升良率。具體而言,可熔接斷開的訊號線與修補線及/或切割修補線,以利用修補線電性連接斷開之訊號線的二個部分。Generally speaking, when the signal line of the display panel is disconnected, the display panel is repaired to improve the yield. Specifically, the disconnected signal line and the repair line can be welded and/or cut, so as to use the repair line to electrically connect the two parts of the disconnected signal line.
顯示面板的修補線可分為設置於周邊區的外部修補線及設置於顯示區的內部修補線。外部修補線的長度長,本身的負載大。利用外部修補線修補訊號線時,與被修補之訊號線電性連接的多個畫素結構易使顯示畫面出現異常(例如:亮線/或暗線)。因此,外部修補線並不適合應用在大面積及/或高解析度的顯示面板中。目前大面積及/或是高解析度的顯示面板的修補技術主流係使用內部修補線。然而,內部修補線設置於顯示區,內部修補線與訊號線之間的距離近,寄生電容大,造成訊號線的負載增加,進而降低畫素結構的充電效率,不利於顯示品質。The repairing lines of the display panel can be divided into outer repairing lines arranged in the peripheral area and inner repairing lines arranged in the display area. The length of the external repair line is long, and the load itself is large. When the signal line is repaired by the external repair line, the multiple pixel structures electrically connected to the repaired signal line may easily cause abnormality (for example, bright lines/or dark lines) on the display screen. Therefore, the external repair lines are not suitable for application in large-area and/or high-resolution display panels. Currently, the mainstream repair technology for large-area and/or high-resolution display panels uses internal repair lines. However, the inner repair line is disposed in the display area, the distance between the inner repair line and the signal line is short, and the parasitic capacitance is large, which increases the load of the signal line, thereby reducing the charging efficiency of the pixel structure, which is not conducive to the display quality.
本發明提供一種畫素陣列基板,性能佳。The present invention provides a pixel array substrate with good performance.
本發明的畫素陣列基板包括多個畫素結構、多條資料線、多條閘極線以及多個第一共用電極。每一畫素結構包括薄膜電晶體及電性連接至薄膜電晶體的畫素電極。多條資料線沿第一方向排列,且電性連接至多個畫素結構的多個薄膜電晶體。多條閘極線沿第二方向排列,且電性連接至多個畫素結構的多個薄膜電晶體,其中第一方向與第二方向交錯。每一第一共用電極包括沿第一方向排列的多個線段,且多個線段的相鄰兩者於結構上分離以定義一間隙。在畫素陣列基板的俯視圖中,對應的一資料線穿越所述間隙。The pixel array substrate of the present invention includes a plurality of pixel structures, a plurality of data lines, a plurality of gate lines and a plurality of first common electrodes. Each pixel structure includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The plurality of data lines are arranged along the first direction and are electrically connected to the plurality of thin film transistors of the plurality of pixel structures. The plurality of gate lines are arranged along the second direction and are electrically connected to the plurality of thin film transistors of the plurality of pixel structures, wherein the first direction and the second direction are staggered. Each of the first common electrodes includes a plurality of line segments arranged along the first direction, and adjacent two of the plurality of line segments are structurally separated to define a gap. In the top view of the pixel array substrate, a corresponding data line passes through the gap.
現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.
應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”可以是二元件間存在其它元件。It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may refer to the existence of other elements between the two elements.
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes the stated value and the average within an acceptable deviation from the particular value as determined by one of ordinary skill in the art, given the measurement in question and the A specific amount of measurement-related error (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately" or "substantially" may be used to select a more acceptable range of deviation or standard deviation depending on optical properties, etching properties or other properties, and not one standard deviation may apply to all properties. .
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present invention, and are not to be construed as idealized or excessive Formal meaning, unless expressly defined as such herein.
圖1為本發明一實施例之畫素陣列基板10的俯視示意圖。FIG. 1 is a schematic top view of a
圖2為本發明一實施例之畫素陣列基板10之一區域R的俯視示意圖。圖2對應圖1的區域R。FIG. 2 is a schematic top view of a region R of the
圖1示意性地繪出基底110、閘極線GL及轉接線gl,而省略圖2之畫素陣列基板10的其它構件。FIG. 1 schematically illustrates the
圖3為本發明一實施例之畫素陣列基板10之局部r的放大示意圖。圖3對應圖2的局部r。FIG. 3 is an enlarged schematic diagram of a part r of the
圖4為本發明一實施例之畫素陣列基板10之剖面示意圖。圖4對應圖3的剖線І-І’。FIG. 4 is a schematic cross-sectional view of the
請參照圖1、圖2、圖3及圖4,畫素陣列基板10包括基底110。基底110主要用以承載畫素陣列基板10的多個構件。舉例而言,在本實施例中,基底110的材質可以是玻璃。然而,本發明不限於此,根據其它實施例,基底110的材質也可以是石英、有機聚合物、不透光/反射材料(例如:晶圓、陶瓷等)、或是其它可適用的材料。Referring to FIGS. 1 , 2 , 3 and 4 , the
請參照圖1、圖2及圖3,畫素陣列基板10包括多條資料線DL和多條閘極線GL。多條資料線DL和多條閘極線GL設置於基底110上。多條資料線DL沿第一方向x排列,多條閘極線GL沿第二方向y上排列,其中第一方向x與第二方向y交錯。舉例而言,在本實施例中,第一方向x與第二方向y可垂直,但本發明不以此為限。Referring to FIGS. 1 , 2 and 3 , the
請參照圖3及圖4,另外,資料線DL與閘極線GL屬於不同的膜層。舉例而言,在本實施例中,閘極線GL可選擇性地屬於第一金屬層120,資料線DL可選擇性地屬於第二金屬層140,但本發明不以此為限。Please refer to FIG. 3 and FIG. 4 , in addition, the data line DL and the gate line GL belong to different layers. For example, in this embodiment, the gate line GL can selectively belong to the
基於導電性的考量,在本實施例中,資料線DL與閘極線GL是使用金屬材料。然而,本發明不限於此,根據其他實施例,資料線DL與閘極線GL也可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。Based on the consideration of conductivity, in this embodiment, the data line DL and the gate line GL are made of metal materials. However, the present invention is not limited to this. According to other embodiments, the data line DL and the gate line GL can also use other conductive materials, such as alloys, nitrides of metal materials, oxides of metal materials, and oxynitrides of metal materials. , or a stack of metal materials and other conductive materials.
請參照圖2及圖3,畫素陣列基板10包括多個畫素結構SPX,設置於基底110上。每一畫素結構SPX包括薄膜電晶體T及電性連接至薄膜電晶體T的畫素電極202。多條資料線DL電性連接至多個畫素結構SPX的多個薄膜電晶體T。多條閘極線GL電性連接至多個畫素結構SPX的多個薄膜電晶體T。Referring to FIG. 2 and FIG. 3 , the
請參照圖3及圖4,具體而言,在本實施例中,每一薄膜電晶體T具有源極Ta、汲極Tb、閘極Tc及半導體圖案Td,閘絕緣層130夾設於閘極Tc與半導體圖案Td之間,源極Ta和汲極Tb分別與半導體圖案Td的不同兩區電性連接,源極Ta電性連接至對應的一條資料線DL,且閘極Tc電性連接至對應的一條閘極線GL。舉例而言,在本實施例中,閘極Tc可選擇性地屬於第一金屬層120,源極Ta和汲極Tb可選擇性地屬於第二金屬層140,但本發明不以此為限。Please refer to FIG. 3 and FIG. 4 . Specifically, in this embodiment, each thin film transistor T has a source electrode Ta, a drain electrode Tb, a gate electrode Tc and a semiconductor pattern Td, and the gate insulating layer 130 is sandwiched between the gate electrodes. Between Tc and the semiconductor pattern Td, the source Ta and the drain Tb are respectively electrically connected to two different regions of the semiconductor pattern Td, the source Ta is electrically connected to a corresponding data line DL, and the gate Tc is electrically connected to A corresponding gate line GL. For example, in this embodiment, the gate electrode Tc can selectively belong to the
每一薄膜電晶體T的汲極Tb電性連接至對應的一畫素電極202。舉例而言,在本實施例中,每一畫素結構SPX更包括設置於閘絕緣層130上且與薄膜電晶體T之汲極Tb電性連接的一連接圖案142;畫素陣列基板10還可包括設置於第二金屬層140上的第一鈍化層150、設置於第一鈍化層150上的彩色濾光圖案160、設置於彩色濾光圖案160上的第二鈍化層170及設置於第二鈍化層170上的平坦層190;畫素電極202可設置平坦層190上,且透過平坦層190的接觸窗192電性連接至連接圖案142,其中連接圖案142電性連接畫素電極202與薄膜電晶體T的汲極Tb。The drain electrode Tb of each thin film transistor T is electrically connected to a
在本實施例中,畫素電極202可屬於第二透明導電層200。第二透明導電層200的材質可包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物、或者是上述至少二者之堆疊層,但本發明不以此為限。In this embodiment, the
請參照圖2,畫素陣列基板10更包括多個第一共用電極122。每一第一共用電極122包括沿第一方向x排列的多個線段122a、122b;多個線段122a、122b的相鄰兩者於結構上分離,以定義間隙122g;在畫素陣列基板10的俯視圖中,對應的一資料線DL穿越間隙122g。Referring to FIG. 2 , the
換言之,每一第一共用電極122包括彼此斷開的多個線段122a、122b;在畫素陣列基板10的俯視圖中,畫素陣列基板10的每一資料線DL至少會穿過至少一個第一共用電極122的斷開處(即間隙122g),而不會與每一個第一共用電極122都重疊。藉此,資料線DL與第一共用電極122之間的寄生電容小,使得資料線DL的負載減輕,進而增進畫素結構SPX的充電效率、提升畫素陣列基板10的性能。In other words, each first
在本實施例中,每一第一共用電極122的多個線段122a、122b包括多個第一線段122a及多個第二線段122b,每一第一線段122a與至少一資料線DL交錯設置,每一第二線段122b與對應之一畫素結構SPX的連接圖案142交錯且未與資料線DL重疊。In this embodiment, the plurality of
於正常的情況下(或者說,第一共用電極122未被用以修補畫素陣列基板10的情況下),每一第一共用電極122的多個第一線段122a及多個第二線段122b係各自電性連接至對應的一第二共用電極124;第一共用電極122的多個第一線段122a、第一共用電極122的多個第二線段122b及第二共用電極124具有相同的參考電位;但本發明不以此為限。Under normal circumstances (or in other words, when the first
舉例而言,在本實施例中,每一第一線段122a可與三條資料線DL交錯設置,且左右相鄰的兩個第一線段122a之間可設有分別與二個連接圖案142交錯的二個第二線段122b-1、122b-2。然而,本發明不以此為限,與同一第一線段122a交錯之資料線DL的數量及/或位於相鄰兩個第一線段122a之間的第二線段122b的數量均可視實際需求而改變。For example, in this embodiment, each of the
值得一提的是,在本實施例中,第二線段122b的設置可使得分別對應第一線段122a及第二線段122b的多個畫素結構SPX與第一共用電極122之間的寄生電容較為接近。如此一來,分別對應第一線段122a及第二線段122b的多個畫素結構SPX可具有相近的光學表現,以提升具有畫素陣列基板10之顯示面板(未繪示)的整體顯示品質。It is worth mentioning that, in this embodiment, the setting of the
請參照圖2,在本實施例中,分別對應多個畫素列Rspx的多個第一共用電極122的多個第一線段122a及多個第二線段122b-1可在第一方向x上及第二方向y上交替排列。換言之,分別對應於多個第一線段122a的多群畫素結構SPX的連線大致上可呈第一菱格紋DM1,且分別對應於多個第二線段122b-1的多個畫素結構SPX的連線大致上可呈第二菱格紋DM2。藉此,即便分別對應於多個第一線段122a及多個第二線段122b的多個畫素結構SPX的光學表現(例如:亮度)略有差異,也不易過度影響具有畫素陣列基板10之顯示面板的整體顯示品質。Referring to FIG. 2 , in this embodiment, the plurality of
舉例而言,在本實施例中,第一共用電極122可選擇性地屬於第一金屬層120,但本發明不以此為限。基於導電性的考量,在本實施例中,第一共用電極122是使用金屬材料。然而,本發明不限於此,根據其他實施例,第一共用電極122也可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。For example, in this embodiment, the first
請參照圖2,在本實施例中,畫素陣列基板10更包括多個第二共用電極124;多個畫素結構SPX排成多個畫素列Rspx,每一畫素列Rspx的多個畫素結構SPX沿第一方向x排列;每一第二共用電極124與對應之一畫素列Rspx的多個畫素結構SPX的多個畫素電極202部分地重疊。每一第二共用電極124用以與多個畫素電極202形成多個畫素結構SPX的儲存電容。在畫素陣列基板10的俯視圖中,每一第一共用電極122可設置於對應的一條閘極線GL與對應及一個第二共用電極124之間。Referring to FIG. 2, in this embodiment, the
舉例而言,在本實施例中,第二共用電極124可選擇性地屬於第一金屬層120,但本發明不以此為限。基於導電性的考量,在本實施例中,第二共用電極124是使用金屬材料。然而,本發明不限於此,根據其他實施例,第二共用電極124也可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。For example, in this embodiment, the second
請參照圖1及圖2,在本實施例中,畫素陣列基板10還包括多條轉接線gl。多條轉接線gl設置於基底110上,且在第一方向x上排列。在第一方向x上排列的多條轉接線gl分別電性連接至在第二方向y上排列的多條閘極線GL。請參照圖2,在本實施例中,多個畫素結構SPX排成多個畫素行Cspx,每一畫素行Cspx的多個畫素結構SPX沿第二方向y排列;在畫素陣列基板10的俯視圖中,每一轉接線gl設置於多個畫素行Cspx的相鄰兩者之間。Referring to FIG. 1 and FIG. 2 , in this embodiment, the
請參照圖1、圖2及圖3,舉例而言,在本實施例中,多條閘極線GL可選擇性地屬於第一金屬層120,多條轉接線gl的主要部gla可選擇性地屬於第二金屬層140,第一金屬層120與第二金屬層140之間設有閘絕緣層130(繪於圖4),閘絕緣層130具有多個接觸窗130a(繪於圖1),多條轉接線gl的主要部gla可透過閘絕緣層130的多個接觸窗130a分別與多條閘極線GL電性連接,但本發明不以此為限。Please refer to FIG. 1 , FIG. 2 and FIG. 3 . For example, in the present embodiment, a plurality of gate lines GL may selectively belong to the
請參照圖2、圖3及圖4,在本實施例中,畫素陣列基板10還可選擇性地包括透明屏蔽圖案182。透明屏蔽圖案182設置於轉接線gl所屬的至少一膜層與畫素電極202所屬的膜層之間,以屏蔽轉接線gl之閘極驅動訊號對畫素電極202之電位的干擾。舉例而言,在本實施例中,透明屏蔽圖案182所屬的第一透明導電層180可設置於轉接線gl之主要部gla所屬的第二金屬層140與畫素電極202所屬的第二透明導電層200之間。Referring to FIG. 2 , FIG. 3 and FIG. 4 , in this embodiment, the
請參照圖4,具體而言,在本實施例中,透明屏蔽圖案182可選擇性地設置於第二鈍化層170上,且位於平坦層190與第二鈍化層170之間,但本發明不以此為限。根據其它實施例,透明屏蔽圖案182也可設置於轉接線gl與畫素電極202之間的其它位置;或者,也可省略透明屏蔽圖案182的設置。Please refer to FIG. 4 , specifically, in this embodiment, the
請參照圖2,在本實施例中,於畫素陣列基板10的俯視圖中,第一共用電極122的線段122a與資料線DL具有第一交錯處X1,且第一交錯處X1可重疊於透明屏蔽圖案182的開口182a。換言之,透明屏蔽圖案182的實體在第一共用電極122與資料線DL的第一交錯處X1讓開且未與第一交錯處X1重疊。Referring to FIG. 2, in this embodiment, in the top view of the
請參照圖2,在本實施例中,畫素陣列基板10更包括多個第三共用電極144,沿第一方向x排列;在畫素陣列基板10的俯視圖中,每一第三共用電極144設置於多個畫素行Cspx的相鄰兩者之間。Referring to FIG. 2 , in this embodiment, the
舉例而言,在本實施例中,第三共用電極144具有跨越多條閘極線GL的主要部144m,第三共用電極144的主要部144m可屬於第二金屬層140,但本發明不以此為限。基於導電性的考量,在本實施例中,第三共用電極144是使用金屬材料。然而,本發明不限於此,根據其他實施例,第三共用電極144也可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。For example, in this embodiment, the third
在本實施例中,第一共用電極122的線段122a與第三共用電極144具有第二交錯處X2,且第二交錯處X2重疊於透明屏蔽圖案182的開口182a。換言之,透明屏蔽圖案182的實體在第一共用電極122與第三共用電極144的第二交錯處X2讓開且未與第二交錯處X2重疊。In this embodiment, the
在本實施例中,於畫素陣列基板10的俯視圖中,第一共用電極122的一線段122a與一轉接線gl具有第三交錯處X3,且第三交錯處X3重疊於透明屏蔽圖案182的開口182a。換言之,透明屏蔽圖案182的實體在第一共用電極122與轉接線gl的第三交錯處X3讓開且未與第三交錯處X3重疊。In the present embodiment, in the top view of the
在本實施例中,於畫素陣列基板10的俯視圖中,第一共用電極122的線段122a與另一第三共用電極144具有第四交錯處X4,且第四交錯處X4重疊於透明屏蔽圖案182的開口182a。換言之,透明屏蔽圖案182的實體在第一共用電極122的線段122a與另一第三共用電極144的第四交錯處X4讓開且未與第四交錯處X4重疊。In this embodiment, in the top view of the
值得注意的是,當訊號線(例如:資料線DL及/或轉接線gl)斷線時,可使用橫向設置的第一共用電極122及直向設置的第三共用電極144來修補之,以下以圖5為例說明之。It is worth noting that when the signal line (for example, the data line DL and/or the transition line gl) is disconnected, the first
圖5為本發明一實施例之畫素陣列基板10’的俯視示意圖。圖5的畫素陣列基板10’與圖2的畫素陣列基板10類似,因此相同或相似的元件以相同或相似的元件符號表示,以下說明兩者的差異處,兩者相同或相似處請參照上述說明,於此便不再重述。此外,為清楚繪示起見,圖5省略畫素電極202的繪示。FIG. 5 is a schematic top view of a pixel array substrate 10' according to an embodiment of the present invention. The
圖2的畫素陣列基板10是正常的(或者說,未修補的)畫素陣列基板,而圖5的畫素陣列基板10’是修過的畫素陣列基板。The
請參照圖5,具體而言,在本實施例中,一資料線DL具有斷開處DLo,斷開處DLo將資料線DL分為第一部分DL-1及第二部分DL-2,其中資料線DL的第一部分DL-1位於斷開處DLo的上方,且資料線DL的第二部分DL-2位於斷開處DLo的下方。Please refer to FIG. 5 , specifically, in this embodiment, a data line DL has a disconnection DLo, and the disconnection DLo divides the data line DL into a first part DL-1 and a second part DL-2, wherein the data The first portion DL-1 of the line DL is located above the disconnection DLo, and the second portion DL-2 of the data line DL is located below the disconnection DLo.
為修補斷開的資料線DL,在本實施例中,可熔接資料線DL的第一部分DL-1和與其交錯之第一共用電極122的一線段122a,以使第一共用電極122的一線段122a與資料線DL的第一部分DL-1具有第一熔接處W1並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第一熔接處W1可重疊於透明屏蔽圖案182的開口182a,但本發明不以此為限。In order to repair the disconnected data line DL, in this embodiment, the first portion DL-1 of the data line DL and the
在本實施例中,還可熔接與資料線DL之第一部分DL-1交錯之第一共用電極122的線段122a與一第三共用電極144的一處144a,以使第一共用電極122的線段122a與第三共用電極144具有第二熔接處W2並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第二熔接處W2可重疊於透明屏蔽圖案182的開口182a,但本發明不以此為限。In this embodiment, the
在本實施例中,還可熔接第三共用電極144的另一處144b和與其交錯之另一第一共用電極122的一線段122a,以使另一第一共用電極122的一線段122a與第三共用電極144的另一處144b具有第五熔接處W5並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第五熔接處W5可重疊於透明屏蔽圖案182的另一開口182a,但本發明不以此為限。In this embodiment, the
在本實施例中,還可熔接資料線DL的第二部分DL-2和與其交錯之另一第一共用電極122的一線段122a,以使另一第一共用電極122的一線段122a與資料線DL的第二部分DL-2具有第六熔接處W6並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第六熔接處W6可重疊於透明屏蔽圖案182的另一開口182a,但本發明不以此為限。In this embodiment, the second portion DL-2 of the data line DL can also be welded with the
在本實施例中,還可使具有第二熔接點W2及第五熔接點W5之第三共用電極144的一部分與第三共用電極144的其它部分斷開。具體而言,在本實施例中,第三共用電極144可具有位於第二熔接點W2上方的一第一斷開處C1以及位於第五熔接點W5下方的一第三斷開處C3。在本實施例中,透明屏蔽圖案182的開口182a可具有凹陷部182a-1,重疊於第一斷開處C1,但本發明不此為限。In this embodiment, a part of the third
此外,在本實施例中,還可使具有第一熔接點W1及第二熔接點W2的一線段122a與相鄰的第二共用電極124具有一第四斷開處C4,使具有第五熔接點W5及第六熔接點W6的另一線段122a與相鄰的第二共用電極124具有一第五斷開處C5。In addition, in this embodiment, the
在形成上述的第一熔接點W1、第二熔接點W2、第五熔接點W6、第六熔接點W6、第一斷開處C1、第三斷開處C3、第四斷開處C4及第五斷開處C5後,資料線DL之第一部分DL-1的資料訊號S
DL便可透過第一熔接點W1、與資料線DL之第一部分DL-1交錯之一第一共用電極122的線段122a、第二熔接點W2、被第一斷開處C1及第三斷開處C3截出之第三共用電極144的一部分、第五熔接點W5、與資料線DL之第二部分DL-2交錯之另一第一共用電極122的線段122a及第六熔接點W6傳遞至資料線DL的第二部分DL-2,進而使畫素陣列基板10’能正常運作。
In the above-mentioned first welding point W1, second welding point W2, fifth welding point W6, sixth welding point W6, first breaking point C1, third breaking point C3, fourth breaking point C4 and th After the five disconnection points C5, the data signal S DL of the first part DL-1 of the data line DL can pass through the first welding point W1 and a line segment of the first
請參照圖5,在本實施例中,一轉接線gl具有斷開處glo,斷開處glo將轉接線gl分為第一部分gl-1及第二部分gl-2,其中轉接線gl的第一部分gl-1位於斷開處glo的上方,且轉接線gl的第二部分gl-2位於斷開處glo的下方。Referring to FIG. 5 , in this embodiment, a patch cord gl has a disconnection glo, and the disconnection glo divides the patch cord gl into a first part gl-1 and a second part gl-2, wherein the patch cord gl The first portion of gl, gl-1, is located above the disconnection glo, and the second portion of the patch cord gl, gl-2, is located below the disconnection point glo.
在本實施例中,可熔接轉接線gl的第一部分gl-1和與其交錯之一第一共用電極122的一線段122a,以使第一共用電極122的一線段122a與轉接線gl的第一部分gl-1具有第三熔接處W3並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第三熔接處W3可重疊於透明屏蔽圖案182的開口182a,但本發明不以此為限。In the present embodiment, the first part gl-1 of the patch cord gl can be welded to the
在本實施例中,還可熔接與轉接線gl之第一部分gl-1交錯之第一共用電極122的線段122a與另一第三共用電極144的一處144c,以使第一共用電極122的線段122a與第三共用電極144具有第四熔接處W4並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第四熔接處W4可重疊於透明屏蔽圖案182的開口182a,但本發明不以此為限。In this embodiment, the
在本實施例中,還可熔接所述另一第三共用電極144的另一處144d和與其交錯之另一第一共用電極122的線段122a,以使另一第一共用電極122的線段122a與第三共用電極144的另一處144d具有第七熔接處W7並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第七熔接處W7可重疊於透明屏蔽圖案182的另一開口182a,但本發明不以此為限。In this embodiment, the
在本實施例中,還可熔接轉接線gl的第二部分gl-2和與其交錯之另一第一共用電極122的線段122a,以使另一第一共用電極122的線段122a與轉接線gl的第二部分gl-2具有第八熔接處W8並彼此電性連接。在本實施例中,於畫素陣列基板10’的俯視圖中,第八熔接處W8可重疊於透明屏蔽圖案182的另一開口182a,但本發明不以此為限。In this embodiment, the second portion gl-2 of the transition wire gl can also be welded to the
在本實施例中,還可使具有第四熔接點W4及第七熔接點W7之第三共用電極144的一部分與第三共用電極144的其它部分斷開。具體而言,第三共用電極144可具有位於第四熔接點W4上方的一第二斷開處C2,且具有位於第七熔接點W7下方的一第六斷開處C6。在本實施例中,透明屏蔽圖案182的開口182a可具有凹陷部182a-2,重疊於第二斷開處C2,但本發明不此為限。In this embodiment, a part of the third
此外,在本實施例中,還可使具有第三熔接點W3及第四熔接點W4之第一共用電極122的第一線段122a與相鄰的第二共用電極124具有一第七斷開處C7,具有第七熔接點W7及第八熔接點W8之第一共用電極122的第一線段122a與相鄰的第二共用電極124具有一第八斷開處C8。In addition, in this embodiment, the
在形成上述的第三熔接點W3、第四熔接點W4、第七熔接點W7、第八熔接點W8、第二斷開處C2、第六斷開處C6、第七斷開處C7及第八斷開處C8後,轉接線gl之第一部分gl-1的閘極驅動訊號S
gl便可透過第三熔接點W3、與轉接線gl之第一部分gl-1交錯的第一共用電極122的線段122a、第四熔接點W4、被第二斷開處C2及第六斷開處C6截出之第三共用電極144的一部分、第七熔接點W7、與轉接線gl之第二部分gl-2交錯之另一第一共用電極122的線段122a及第八熔接點W8傳遞至轉接線gl的第二部分gl-2,進而使畫素陣列基板10’能正常運作。
In the above-mentioned third welding point W3, fourth welding point W4, seventh welding point W7, eighth welding point W8, second breaking point C2, sixth breaking point C6, seventh breaking point C7 and th After the eight disconnection point C8, the gate drive signal S gl of the first part gl-1 of the patch cord gl can pass through the third welding point W3 and the first common electrode interlaced with the first part gl-1 of the patch cord gl The
10、10’: 畫素陣列基板 110: 基底 120: 第一金屬層 122: 第一共用電極 122a、122b、122b-1、122b-2: 線段 122g: 間隙 124: 第二共用電極 130: 閘絕緣層 140: 第二金屬層 142: 連接圖案 144: 第三共用電極 144a、144b、144c、144d: 一處 144m: 主要部 150: 第一鈍化層 160: 彩色濾光圖案 170: 第二鈍化層 180: 第一透明導電層 182: 透明屏蔽圖案 182a: 開口 182a-1、182a-2: 凹陷部 190: 平坦層 130a、192: 接觸窗 200: 第二透明導電層 202: 畫素電極 Cspx: 畫素行 C1: 第一斷開處 C2: 第二斷開處 C3: 第三斷開處 C4: 第四斷開處 C5: 第五斷開處 C6: 第六斷開處 C7: 第七斷開處 C8: 第八斷開處 DL: 資料線 DLo: 斷開處 DL-1: 第一部分 DL-2: 第二部分 DM1: 第一菱格紋 DM2: 第二菱格紋 GL: 閘極線 gl: 轉接線 gla: 主要部 glo: 斷開處 gl-1: 第一部分 gl-2: 第二部分 R: 區域 r: 局部 Rspx: 畫素列 S DL: 資料訊號 S gl: 閘極驅動訊號 SPX: 畫素結構 T: 薄膜電晶體 Ta: 源極 Tb: 汲極 Tc: 閘極 Td: 半導體圖案 W1: 第一熔接處 W2: 第二熔接處 W3: 第三熔接處 W4: 第四熔接處 W5: 第五熔接處 W6: 第六熔接處 W7: 第七熔接處 W8: 第八熔接處 X1: 第一交錯處 X2: 第二交錯處 X3: 第三交錯處 X4: 第四交錯處 x: 第一方向 y: 第二方向 І-І’: 剖線 10, 10': pixel array substrate 110: base 120: first metal layer 122: first common electrode 122a, 122b, 122b-1, 122b-2: line segment 122g: gap 124: second common electrode 130: gate insulation Layer 140: Second metal layer 142: Connection pattern 144: Third common electrode 144a, 144b, 144c, 144d: One place 144m: Main part 150: First passivation layer 160: Color filter pattern 170: Second passivation layer 180 : first transparent conductive layer 182: transparent shield pattern 182a: openings 182a-1, 182a-2: recessed portion 190: flat layers 130a, 192: contact window 200: second transparent conductive layer 202: pixel electrode Cspx: pixel row C1: The first disconnection C2: The second disconnection C3: The third disconnection C4: The fourth disconnection C5: The fifth disconnection C6: The sixth disconnection C7: The seventh disconnection C8 : The eighth disconnection DL: Data line DLo: The disconnection DL-1: The first part DL-2: The second part DM1: The first diamond pattern DM2: The second diamond pattern GL: Gate line gl: Turn Wiring gla: main part glo: disconnection gl-1: first part gl-2: second part R: area r: local Rspx: pixel row S DL : data signal S gl : gate driving signal SPX: drawing Element structure T: thin film transistor Ta: source Tb: drain Tc: gate Td: semiconductor pattern W1: first weld W2: second weld W3: third weld W4: fourth weld W5: first weld The fifth weld W6: the sixth weld W7: the seventh weld W8: the eighth weld X1: the first intersection X2: the second intersection X3: the third intersection X4: the fourth intersection x: the first direction y: second direction І-І': section line
圖1為本發明一實施例之畫素陣列基板10的俯視示意圖。
圖2為本發明一實施例之畫素陣列基板10之一區域R的俯視示意圖。
圖3為本發明一實施例之畫素陣列基板10之局部r的放大示意圖。
圖4為本發明一實施例之畫素陣列基板10之剖面示意圖。
圖5為本發明一實施例之畫素陣列基板10’的俯視示意圖。
FIG. 1 is a schematic top view of a
10: 畫素陣列基板
120: 第一金屬層
122: 第一共用電極
122a、122b、122b-1、122b-2: 線段
122g: 間隙
124: 第二共用電極
140: 第二金屬層
144: 第三共用電極
144m:主要部
180: 第一透明導電層
182: 透明屏蔽圖案
182a: 開口
202: 畫素電極
Cspx: 畫素行
DL: 資料線
DM1: 第一菱格紋
DM2: 第二菱格紋
GL: 閘極線
gl: 轉接線
R: 區域
r: 局部
Rspx: 畫素列
SPX: 畫素結構
T: 薄膜電晶體
X1: 第一交錯處
X2: 第二交錯處
X3: 第三交錯處
X4: 第四交錯處
x: 第一方向
y: 第二方向
10: Pixel Array Substrate
120: first metal layer
122: first
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