TWI802393B - Pixel array substrate - Google Patents

Pixel array substrate Download PDF

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Publication number
TWI802393B
TWI802393B TW111116728A TW111116728A TWI802393B TW I802393 B TWI802393 B TW I802393B TW 111116728 A TW111116728 A TW 111116728A TW 111116728 A TW111116728 A TW 111116728A TW I802393 B TWI802393 B TW I802393B
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Taiwan
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pads
transmission lines
lines
pixel
electrically connected
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TW111116728A
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Chinese (zh)
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TW202345123A (en
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林煒力
林弘哲
葉彥緯
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友達光電股份有限公司
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Priority to CN202211225280.7A priority patent/CN115483231A/en
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Publication of TW202345123A publication Critical patent/TW202345123A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

A pixel array substrate includes a base, pixels, pads, bus lines, a multiplexer, gate lines and transmission lines. The pixels are disposed on an active area of the base. The pads are disposed on a first peripheral region of the base. The bus lines are disposed on a second peripheral region of the base. The multiplexer is disposed on a third peripheral region of the base. The gate lines are electrically connected to the multiplexer and arranged in a first direction. The transmission lines are arranged in a second direction. The transmission lines includes first transmission lines. A first end and a second end of each of the first transmission lines are electrically connected to a corresponding pad and a corresponding bus line, respectively.

Description

畫素陣列基板Pixel Array Substrate

本發明是有關於一種畫素陣列基板。 The invention relates to a pixel array substrate.

隨著顯示科技的發達,人們對顯示裝置的需求不再滿足於高解析度、高對比、廣視角等光學特性,人們還期待顯示裝置具有優雅的外觀。舉例而言,人們期待顯示裝置的邊框窄,甚至無邊框。 With the development of display technology, people's demand for display devices is no longer satisfied with optical properties such as high resolution, high contrast, and wide viewing angle. People also expect the display device to have an elegant appearance. For example, people expect display devices to have narrow bezels, or even no bezels.

一般而言,顯示裝置包括設置於主動區的畫素陣列、設置於主動區上側的多個接墊、與接墊電性連接的外部驅動單元和閘極驅動電路。為減少顯示裝置之邊框的左右兩側寬度,可將閘極驅動電路的第一部分設置於邊框的左側、右側或左右兩側,且將閘極驅動電路的第二部分分散於主動區中。為使閘極驅動電路的第一部分與閘極驅動電路的第二部分能互相配合進而顯示畫面,外部驅動單元須透過設置於主動區上側的多個接墊及多條扇出走線段方能與分散於主動區之中的閘極驅動電路的第二部分電性連接。然而,多條扇出走線段的設置卻導致主動區之邊框的上側寬度變大。 Generally speaking, a display device includes a pixel array disposed on the active area, a plurality of pads disposed on the upper side of the active area, an external driving unit and a gate driving circuit electrically connected to the pads. In order to reduce the width of the left and right sides of the frame of the display device, the first part of the gate driving circuit can be arranged on the left, right or left and right sides of the frame, and the second part of the gate driving circuit can be dispersed in the active area. In order to make the first part of the gate drive circuit and the second part of the gate drive circuit cooperate with each other to display the screen, the external drive unit must be connected to the distributed through multiple pads and multiple fan-out line segments arranged on the upper side of the active area. The second part of the gate driving circuit in the active area is electrically connected. However, the arrangement of multiple fan-out line segments results in a larger upper width of the frame of the active area.

本發明提供一種畫素陣列基板,性能佳。 The invention provides a pixel array substrate with good performance.

本發明的畫素陣列基板,包括基底、多個畫素、多個接墊、多條匯流線、多工器、多條資料線、多條閘極線、多個開關電晶體以及多條傳輸線。基底具有主動區、第一周邊區、第二周邊區及第三周邊區,其中第一周邊區、主動區及第二周邊區在第一方向上依序排列,第三周邊區及主動區在第二方向上依序排列,且第一方向與第二方向交錯。多個畫素設置於基底的主動區,其中每一畫素包括畫素電晶體及畫素電極,畫素電晶體具有第一端、第二端及控制端,且畫素電極電性連接至畫素電晶體的第二端。多個接墊設置於基底的第一周邊區。多條匯流線設置於基底的第二周邊區,且在第一方向上排列。多工器設置於基底的第三周邊區。多條資料線設置於基底上,且在第二方向上排列,其中多條資料線電性連接至多個畫素的多個畫素電晶體的多個第一端。多條閘極線設置於基底上,且在第一方向上排列,其中多條閘極線電性連接至多工器。多個開關電晶體設置於基底的主動區,其中多個畫素排成多個畫素列,每一畫素列的多個畫素在第二方向上排列,每一開關電晶體具有第一端、第二端及控制端,每一開關電晶體的控制端電性連接至對應的一條閘極線,且每一開關電晶體的第二端電性連接至對應的一個畫素列的多個畫素的多個畫素電晶體的多個控制端。多條傳輸線設置於基底上且在第二方向上排列,其中每一傳輸線電性連接至對應的一個開關電晶 體的第一端,多條傳輸線包括多條第一傳輸線,且每一第一傳輸線的第一端及第二端分別電性連接至對應的一個接墊及對應的一條匯流線。 The pixel array substrate of the present invention includes a substrate, a plurality of pixels, a plurality of pads, a plurality of bus lines, a multiplexer, a plurality of data lines, a plurality of gate lines, a plurality of switching transistors and a plurality of transmission lines . The substrate has an active area, a first peripheral area, a second peripheral area and a third peripheral area, wherein the first peripheral area, the active area and the second peripheral area are arranged in sequence in the first direction, and the third peripheral area and the active area are arranged in the first direction. They are arranged sequentially in the second direction, and the first direction and the second direction are interlaced. A plurality of pixels are arranged in the active area of the substrate, wherein each pixel includes a pixel transistor and a pixel electrode, the pixel transistor has a first end, a second end and a control end, and the pixel electrode is electrically connected to The second terminal of the pixel transistor. A plurality of pads are disposed on the first peripheral area of the base. A plurality of bus lines are arranged on the second peripheral area of the base and arranged in the first direction. The multiplexer is disposed on the third peripheral area of the substrate. A plurality of data lines are disposed on the substrate and arranged in a second direction, wherein the plurality of data lines are electrically connected to a plurality of first terminals of a plurality of pixel transistors of a plurality of pixels. A plurality of gate lines are disposed on the substrate and arranged in a first direction, wherein the plurality of gate lines are electrically connected to the multiplexer. A plurality of switching transistors are arranged in the active area of the substrate, wherein a plurality of pixels are arranged in a plurality of pixel rows, and a plurality of pixels of each pixel row are arranged in the second direction, and each switching transistor has a first terminal, a second terminal and a control terminal, the control terminal of each switching transistor is electrically connected to a corresponding gate line, and the second terminal of each switching transistor is electrically connected to a plurality of corresponding pixel columns Multiple control terminals of multiple pixel transistors of a pixel. A plurality of transmission lines are disposed on the substrate and arranged in the second direction, wherein each transmission line is electrically connected to a corresponding switching transistor The plurality of transmission lines includes a plurality of first transmission lines, and the first end and the second end of each first transmission line are respectively electrically connected to a corresponding pad and a corresponding bus line.

在本發明的一實施例中,上述的多條傳輸線更包括多條第二傳輸線,其中每一第二傳輸線的第一端與多個接墊於結構上分離,且每一第二傳輸線的第二端電性連接至對應的一條匯流線。 In an embodiment of the present invention, the above-mentioned plurality of transmission lines further includes a plurality of second transmission lines, wherein the first end of each second transmission line is structurally separated from the plurality of pads, and the first end of each second transmission line The two terminals are electrically connected to a corresponding bus line.

在本發明的一實施例中,上述的多個接墊包括電性連接至同一薄膜覆晶封裝接墊群,接墊群包括多個第一接墊及多個第二接墊,多個第一接墊是接墊群之中最遠離第三周邊區的多個接墊,多個第二接墊是接墊群之中最靠近第三周邊區的多個接墊,多條第一傳輸線的多個第一端分別電性連接至接墊群的多個第一接墊。多條傳輸線更包括多個第三傳輸線,其中多條第三傳輸線的多個第一端分別電性連接至接墊群的多個第二接墊,且多個第三傳輸線的多個第二端分別電性連接至多條匯流線。在畫素陣列基板的俯視圖中,多條第二傳輸線位於多條第一傳輸線與多條第三傳輸線之間。 In an embodiment of the present invention, the above-mentioned plurality of pads include a group of pads electrically connected to the same film-on-chip package, the group of pads includes a plurality of first pads and a plurality of second pads, and a plurality of first pads. A pad is a plurality of pads farthest from the third peripheral area in the pad group, a plurality of second pads is a plurality of pads in the pad group closest to the third peripheral area, and a plurality of first transmission lines The plurality of first ends are respectively electrically connected to the plurality of first pads of the pad group. The plurality of transmission lines further includes a plurality of third transmission lines, wherein the plurality of first ends of the plurality of third transmission lines are respectively electrically connected to the plurality of second pads of the pad group, and the plurality of second ends of the plurality of third transmission lines The terminals are respectively electrically connected to a plurality of bus lines. In the top view of the pixel array substrate, the plurality of second transmission lines are located between the plurality of first transmission lines and the plurality of third transmission lines.

在本發明的一實施例中,上述的多條匯流線及多條第二傳輸線分別屬於第一導電層及第二導電層,絕緣層設置於第一導電層與第二導電層之間,多條第二傳輸線的多個第二端透過絕緣層的多個接觸窗分別電性連接至多條匯流線,且多個接墊及多個接觸窗分別設置於第一周邊區及第二周邊區。 In an embodiment of the present invention, the above-mentioned plurality of bus lines and the plurality of second transmission lines belong to the first conductive layer and the second conductive layer respectively, and the insulating layer is arranged between the first conductive layer and the second conductive layer. Multiple second ends of the second transmission line are respectively electrically connected to multiple bus lines through multiple contact windows of the insulating layer, and multiple pads and multiple contact windows are respectively disposed on the first peripheral area and the second peripheral area.

在本發明的一實施例中,上述的每一第一傳輸線包括扇出走線段,多條匯流線及多條第一傳輸線分別屬於第一導電層及第二導電層,絕緣層設置於第一導電層與第二導電層之間,多條第一傳輸線的多個第二端透過絕緣層的多個接觸窗分別電性連接至多條匯流線,且多條第一傳輸線的多個扇出走線段及多個接觸窗分別設置於第一周邊區及第二周邊區。 In an embodiment of the present invention, each of the above-mentioned first transmission lines includes a fan-out line segment, a plurality of bus lines and a plurality of first transmission lines belong to the first conductive layer and the second conductive layer respectively, and the insulating layer is arranged on the first conductive layer. Between the layer and the second conductive layer, the multiple second ends of the multiple first transmission lines are respectively electrically connected to the multiple bus lines through the multiple contact windows of the insulating layer, and the multiple fan-out routing segments of the multiple first transmission lines and A plurality of contact windows are respectively disposed in the first peripheral area and the second peripheral area.

在本發明的一實施例中,在上述的畫素陣列基板的俯視圖中,多個畫素位於多個接墊與多條匯流線之間。 In an embodiment of the present invention, in the top view of the above-mentioned pixel array substrate, the plurality of pixels are located between the plurality of pads and the plurality of bus lines.

100:畫素陣列基板 100:Pixel array substrate

110:基底 110: base

110a:主動區 110a: active area

110b-1:第一周邊區 110b-1: The first peripheral area

110b-2:第二周邊區 110b-2: Second peripheral area

110b-3:第三周邊區 110b-3: The third peripheral area

110b-4:第四周邊區 110b-4: The fourth peripheral area

120:接墊 120: Pad

121:第一接墊 121: The first pad

122:第二接墊 122: Second pad

130:驅動元件 130: drive element

140:絕緣層 140: insulating layer

142、144:接觸窗 142, 144: contact window

150:薄膜覆晶封裝 150: Thin film chip-on-chip package

A21:開關電晶體 A21: Switching transistor

A21a、A32a、Ta:第一端 A21a, A32a, Ta: first end

A21b、A32b、Tb:第二端 A21b, A32b, Tb: second terminal

A21c、A32c、Tc:控制端 A21c, A32c, Tc: control terminal

A32:穩壓電晶體 A32: Regulator transistor

BL、BL1、BL2、BL8:匯流線 BL, BL1, BL2, BL8: bus lines

DL:資料線 DL: data line

d1:第一方向 d1: the first direction

d2:第二方向 d2: second direction

G-MUX:多工器 G-MUX: multiplexer

GL、GL1、GL2、GL8、GL9、GL10、GL16、GL17、GL18、GL24、GL25、GL32:閘極線 GL, GL1, GL2, GL8, GL9, GL10, GL16, GL17, GL18, GL24, GL25, GL32: gate line

GP、GP1、GP2、GP3、GP4:閘極線組 GP, GP1, GP2, GP3, GP4: gate line group

G120:接墊群 G120: pad group

HC、HC1、HC2、HC8、HC9、HC10、HC16、HC17、HC18、HC24、HC25、HC26、HC32:傳輸線 HC, HC1, HC2, HC8, HC9, HC10, HC16, HC17, HC18, HC24, HC25, HC26, HC32: transmission line

HCA:第一傳輸線 HCA: first transmission line

HCAa、HCBa、HCCa:第一端 HCAa, HCBa, HCCa: first end

HCAb、HCBb、HCCb:第二端 HCAb, HCBb, HCCb: second end

HCA-F、HCC-F:扇出走線段 HCA-F, HCC-F: Fan-out line segment

HCB:第二傳輸線 HCB: second transmission line

HCC:第三傳輸線 HCC: third transmission line

M1:第一導電層 M1: the first conductive layer

M2:第二導電層 M2: second conductive layer

PE:畫素電極 PE: pixel electrode

R:局部 R: local

Rspx:畫素列 Rspx: pixel column

SPX:畫素 SPX: pixel

T:畫素電晶體 T: pixel transistor

W1、W2:寬度 W1, W2: Width

I-I’、II-II’:剖線 I-I', II-II': section line

圖1為本發明一實施例之畫素陣列基板的俯視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the present invention.

圖2為本發明一實施例之畫素陣列基板的局部的示意圖。 FIG. 2 is a partial schematic diagram of a pixel array substrate according to an embodiment of the present invention.

圖3為本發明一實施例之多工器的電路示意圖。 FIG. 3 is a schematic circuit diagram of a multiplexer according to an embodiment of the present invention.

圖4為本發明一實施例的畫素陣列基板的剖面示意圖。 FIG. 4 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the present invention.

圖5為本發明一實施例的畫素陣列基板的剖面示意圖。 FIG. 5 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the present invention.

現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。 Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.

應當理解,當諸如層、膜、區域或基板的元件被稱為在 另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”可以是二元件間存在其它元件。 It should be understood that when elements such as layers, films, regions or substrates are referred to as When another element is "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。 As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, a limitation of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value. Furthermore, "about", "approximately" or "substantially" used herein can select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and it is not necessary to use one standard deviation to apply to all properties .

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

圖1為本發明一實施例之畫素陣列基板的俯視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the present invention.

請參照圖1,畫素陣列基板100包括基底110。基底110用以承載畫素陣列基板100的元件。舉例而言,在本實施例中, 基底110的材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如:晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。 Referring to FIG. 1 , the pixel array substrate 100 includes a base 110 . The base 110 is used to carry the components of the pixel array substrate 100 . For example, in this example, The material of the substrate 110 can be glass, quartz, organic polymer, or opaque/reflective material (eg, wafer, ceramic, or other applicable materials), or other applicable materials.

基底110具有主動區110a、第一周邊區110b-1、第二周邊區110b-2及第三周邊區110b-3,其中第一周邊區110b-1、主動區110a及第二周邊區110b-2在第一方向d1上依序排列,第三周邊區110b-3及主動區110a在第二方向d2上依序排列,且第一方向d1與第二方向d2交錯。在本實施例中,第一方向d1與第二方向d2例如是互相垂直,但本發明不以此為限。 The substrate 110 has an active region 110a, a first peripheral region 110b-1, a second peripheral region 110b-2 and a third peripheral region 110b-3, wherein the first peripheral region 110b-1, the active region 110a and the second peripheral region 110b- 2 are arranged sequentially in the first direction d1, the third peripheral region 110b-3 and the active region 110a are arranged sequentially in the second direction d2, and the first direction d1 and the second direction d2 are alternately arranged. In this embodiment, the first direction d1 and the second direction d2 are, for example, perpendicular to each other, but the present invention is not limited thereto.

在本實施例中,基底110還具有第四周邊區110b-4,其中第三周邊區110b-3、主動區110a及第四周邊區110b-4在第二方向d2上依序排列。舉例而言,在本實施例中,第一周邊區110b-1、第二周邊區110b-2、第三周邊區110b-3及第四周邊區110b-4可分別是畫素陣列基板100的上邊框區、下邊框區、左邊框區及右邊框區。 In this embodiment, the substrate 110 further has a fourth peripheral region 110b-4, wherein the third peripheral region 110b-3, the active region 110a, and the fourth peripheral region 110b-4 are sequentially arranged in the second direction d2. For example, in this embodiment, the first peripheral area 110b-1, the second peripheral area 110b-2, the third peripheral area 110b-3, and the fourth peripheral area 110b-4 can be the pixel array substrate 100 respectively. Top border area, bottom border area, left border area and right border area.

圖2為本發明一實施例之畫素陣列基板的局部的示意圖。圖2對應圖1的局部R。圖1省略圖2的開關電晶體A21、穩壓電晶體A32、畫素SPX及資料線DL。 FIG. 2 is a partial schematic diagram of a pixel array substrate according to an embodiment of the present invention. Figure 2 corresponds to the part R in Figure 1 . FIG. 1 omits the switching transistor A21 , the voltage stabilizing transistor A32 , the pixel SPX and the data line DL in FIG. 2 .

請參照圖1及圖2,畫素陣列基板100還包括多個畫素SPX,設置於基底110的主動區110a,其中每一畫素SPX包括畫素電晶體T及畫素電極PE,畫素電晶體T具有第一端Ta、第二端Tb及控制端Tc,且畫素電極PE電性連接至畫素電晶體T的 第二端Tb。 Please refer to FIG. 1 and FIG. 2, the pixel array substrate 100 also includes a plurality of pixels SPX, disposed in the active area 110a of the substrate 110, wherein each pixel SPX includes a pixel transistor T and a pixel electrode PE, the pixel The transistor T has a first terminal Ta, a second terminal Tb and a control terminal Tc, and the pixel electrode PE is electrically connected to the pixel electrode T. The second terminal Tb.

請參照圖1,畫素陣列基板100還包括多個接墊120,設置於基底110的第一周邊區110b-1。接墊120用以與薄膜覆晶封裝150電性連接。接墊120所在的第一周邊區110b-1是畫素陣列基板100的訊號輸入側。驅動元件薄膜150還包括驅動元件130,與多條資料線DL電性連接。舉例而言,在本實施例中,驅動元件130可包括晶片,所述晶片可選擇性地藉由薄膜覆晶封裝(Chip On Film;COF)與接墊120接合。然而,本發明不限於此,根據其它實施例,所述晶片也可藉由玻璃覆晶封裝(Chip On Glass;COG)、捲帶式自動接合(Tape Automated Bonding;TAB)或其它方式與接墊120接合。 Referring to FIG. 1 , the pixel array substrate 100 further includes a plurality of pads 120 disposed on the first peripheral region 110 b - 1 of the substrate 110 . The pads 120 are used to electrically connect with the thin film chip-on-chip package 150 . The first peripheral region 110 b - 1 where the pad 120 is located is the signal input side of the pixel array substrate 100 . The driving element film 150 further includes a driving element 130 electrically connected to a plurality of data lines DL. For example, in this embodiment, the driving element 130 may include a chip, and the chip may be selectively bonded to the pads 120 through a Chip On Film (COF) package. However, the present invention is not limited thereto. According to other embodiments, the chip can also be bonded to the pads by Chip On Glass (COG), Tape Automated Bonding (TAB) or other methods. 120 engagement.

畫素陣列基板100還包括多條匯流線BL,設置於基底110的第二周邊區110b-2,且在第一方向d1上排列。匯流線BL是設置在畫素陣列基板100的訊號輸入側(即第一周邊區110b-1)的對向,而非設置於畫素陣列基板100的訊號輸入側。在畫素陣列基板100的俯視圖中,多個畫素SPX位於多個接墊120與多條匯流線BL之間。 The pixel array substrate 100 further includes a plurality of bus lines BL disposed on the second peripheral region 110b-2 of the substrate 110 and arranged in the first direction d1. The bus lines BL are disposed opposite to the signal input side of the pixel array substrate 100 (ie, the first peripheral region 110 b - 1 ), rather than disposed on the signal input side of the pixel array substrate 100 . In the top view of the pixel array substrate 100 , the pixels SPX are located between the pads 120 and the bus lines BL.

圖3為本發明一實施例之多工器的電路示意圖。請參照圖1及圖3,畫素陣列基板100還包括多工器G-MUX,設置於基底110的第三周邊區110b-3。在本實施例中,畫素陣列基板100還可選擇性地包括另一多工器G-MUX,設置於基底110的第四周邊區110b-4。圖3所示的多工器G-MUX的電路僅是示範實施 例,並非用以限制本發明。在其它實施例中,多工器G-MUX的電路也可以是其它類型。 FIG. 3 is a schematic circuit diagram of a multiplexer according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 3 , the pixel array substrate 100 further includes a multiplexer G-MUX disposed on the third peripheral area 110 b - 3 of the substrate 110 . In this embodiment, the pixel array substrate 100 may also optionally include another multiplexer G-MUX disposed on the fourth peripheral region 110 b - 4 of the substrate 110 . The circuit of the multiplexer G-MUX shown in Figure 3 is only an exemplary implementation Examples are not intended to limit the invention. In other embodiments, the circuits of the multiplexer G-MUX may also be of other types.

請參照圖1及圖2,畫素陣列基板100還包括多條資料線DL,設置於基底110上,且在第二方向d2上排列,其中多條資料線DL電性連接至多個畫素SPX的多個畫素電晶體T的多個第一端Ta。畫素陣列基板100還包括多條閘極線GL,設置於基底110上,且在第一方向d1上排列,其中多條閘極線GL至少電性連接到設置於第三周邊區110b-3的多工器G-MUX。在本實施例中,每一條閘極線GL的兩端可分別電性連接至位於第三周邊區110b-3及第四周邊區110b-4的兩個多工器G-MUX,但本發明不以此為限。 Referring to FIG. 1 and FIG. 2, the pixel array substrate 100 further includes a plurality of data lines DL disposed on the substrate 110 and arranged in the second direction d2, wherein the plurality of data lines DL are electrically connected to a plurality of pixels SPX Multiple first ends Ta of multiple pixel transistors T. The pixel array substrate 100 further includes a plurality of gate lines GL disposed on the substrate 110 and arranged in the first direction d1, wherein the plurality of gate lines GL are at least electrically connected to the third peripheral region 110b-3 The multiplexer G-MUX. In this embodiment, both ends of each gate line GL can be electrically connected to two multiplexers G-MUX located in the third peripheral region 110b-3 and the fourth peripheral region 110b-4 respectively, but the present invention This is not the limit.

請參照圖1及圖2,畫素陣列基板100還包括多個開關電晶體A21,設置於基底110的主動區110a,其中多個畫素SPX排成多個畫素列Rspx,每一畫素列Rspx的多個畫素SPX在第二方向d2上排列,每一開關電晶體A21具有第一端A21a、第二端A21b及控制端A21c,每一開關電晶體A21的控制端A21c電性連接至對應的一條閘極線GL,且每一開關電晶體A21的第二端A21b電性連接至對應的一個畫素列Rspx的多個畫素電晶體T的多個控制端Tc。 Please refer to FIG. 1 and FIG. 2, the pixel array substrate 100 also includes a plurality of switching transistors A21, which are arranged in the active area 110a of the substrate 110, wherein a plurality of pixels SPX are arranged in a plurality of pixel columns Rspx, each pixel A plurality of pixels SPX in the row Rspx are arranged in the second direction d2, each switching transistor A21 has a first terminal A21a, a second terminal A21b and a control terminal A21c, and the control terminal A21c of each switching transistor A21 is electrically connected to a corresponding gate line GL, and the second end A21b of each switching transistor A21 is electrically connected to a plurality of control terminals Tc of a plurality of pixel transistors T in a corresponding pixel column Rspx.

畫素陣列基板100還包括多條傳輸線HC,設置於基底110上,且在第二方向d2上排列,其中每一條傳輸線HC電性連接至對應的一個開關電晶體A21的第一端A21a。在本實施例 中,畫素陣列基板100還可選擇性地包括對應多個開關電晶體A21設置的多個穩壓電晶體A32,其中每一穩壓電晶體A32的第一端A32a電性連接至對應的一個開關電晶體A21的控制端A21c,每一穩壓電晶體A32的控制端A32c及第二端A32b彼此電性連接且電性連接至對應的一個畫素列Rspx的多個畫素電晶體T的多個控制端Tc。 The pixel array substrate 100 further includes a plurality of transmission lines HC disposed on the substrate 110 and arranged in the second direction d2, wherein each transmission line HC is electrically connected to a corresponding first terminal A21a of a switching transistor A21. In this example Among them, the pixel array substrate 100 can also optionally include a plurality of voltage stabilizing transistors A32 arranged corresponding to the plurality of switching transistors A21, wherein the first end A32a of each voltage stabilizing transistor A32 is electrically connected to a corresponding The control terminal A21c of the switching transistor A21, the control terminal A32c and the second terminal A32b of each voltage stabilizing transistor A32 are electrically connected to each other and electrically connected to a plurality of pixel transistors T of a corresponding pixel row Rspx Multiple control terminals Tc.

請參照圖1、圖2及圖3,在本實施例中,多條閘極線GL可分為多個閘極線組GP,多個閘極線組GP在第一方向d1上依序排列,每一閘極線組GP包括多條閘極線GL,每一閘極線組GP的多條閘極線GL同步地接收到來自多工器G-MUX的閘極開啟訊號而使得對應的多個開關電晶體A21同時開啟。另一方面,多個閘極線組GP是依時序在不同的時間區間收到來自多工器G-MUX的閘極開啟訊號,而使得別對應多個閘極線組GP的多個開關電晶體A21在不同的時間區間依時序被開啟。 Please refer to FIG. 1, FIG. 2 and FIG. 3. In this embodiment, the multiple gate lines GL can be divided into multiple gate line groups GP, and the multiple gate line groups GP are arranged sequentially in the first direction d1. , each gate line group GP includes multiple gate lines GL, and multiple gate lines GL of each gate line group GP synchronously receive the gate open signal from the multiplexer G-MUX so that the corresponding Multiple switching transistors A21 are turned on simultaneously. On the other hand, multiple gate line groups GP receive gate open signals from the multiplexer G-MUX at different time intervals according to timing, so that the multiple switch circuits corresponding to multiple gate line groups GP Crystal A21 is turned on sequentially in different time intervals.

舉例而言,在本實施例中,多條閘極線GL可分為多個閘極線組GP1、GP2、GP3、GP4,多個閘極線組GP1、GP2、GP3、GP4在第一方向d1上依序排列,每一閘極線組GP1、GP2、GP3、GP4包括8條閘極線GL1~GL8、GL9~GL16、GL17~GL24、GL25~GL32,每一閘極線組GP1、GP2、GP3、GP4的8條閘極線GL1~GL8、GL9~GL16、GL17~GL24、GL25~GL32同步地接收到來自多工器G-MUX的閘極開啟訊號而使得對應的多個開關電晶體A21同時開啟。另一方面,多個閘 極線組GP1、GP2、GP3、GP4是依時序在不同的時間區間收到來自多工器G-MUX的閘極開啟訊號,而使得對應多個閘極線組GP1、GP2、GP3、GP4的多個開關電晶體A21在不同的時間區間依時序被開啟。 For example, in this embodiment, the multiple gate lines GL can be divided into multiple gate line groups GP1, GP2, GP3, and GP4, and the multiple gate line groups GP1, GP2, GP3, and GP4 are in the first direction. Arranged in sequence on d1, each gate line group GP1, GP2, GP3, GP4 includes 8 gate lines GL1~GL8, GL9~GL16, GL17~GL24, GL25~GL32, each gate line group GP1, GP2 The 8 gate lines GL1~GL8, GL9~GL16, GL17~GL24, GL25~GL32 of , GP3, GP4 receive the gate open signal from the multiplexer G-MUX synchronously, so that the corresponding multiple switching transistors A21 is turned on at the same time. On the other hand, multiple gates The pole line groups GP1, GP2, GP3, and GP4 receive the gate open signals from the multiplexer G-MUX in different time intervals according to the timing, so that the corresponding multiple gate line groups GP1, GP2, GP3, and GP4 A plurality of switching transistors A21 are turned on sequentially in different time intervals.

在本實施例中,每一條傳輸線HC對應一條閘極線GL。舉例而言,在本實施例中,多條傳輸線HC1~HC8、HC9~HC16、HC17~HC24、HC25~HC32分別對應多條閘極線GL1~GL8、GL9~GL16、GL17~GL24、GL25~GL32。 In this embodiment, each transmission line HC corresponds to one gate line GL. For example, in this embodiment, multiple transmission lines HC1~HC8, HC9~HC16, HC17~HC24, HC25~HC32 respectively correspond to multiple gate lines GL1~GL8, GL9~GL16, GL17~GL24, GL25~GL32 .

當某一閘極線組GP的多條閘極線GL在一個時間區間同步收到來自多工器G-MUX的閘極開啟訊號,而使得分別對應某一閘極線組GP的多條閘極線GL的多個開關電晶體A21同時被開啟;在此時間區間內,外部驅動單元會透過薄膜覆晶封裝150依時序提供畫素閘極開啟訊號至對應所述一個閘極線組GP的多條閘極線GL的多條傳輸線HC,使得對應同一閘極線組GP的多條閘極線GL的多個畫素列Rspx的多個畫素電晶體T依時序被開啟,進而使對應同一閘極線組GP的多條閘極線GL的多個畫素列Rspx的多個畫素電極PE被充至指定電位。 When multiple gate lines GL of a certain gate line group GP receive the gate open signal from the multiplexer G-MUX synchronously in a time interval, so that the multiple gates respectively corresponding to a certain gate line group GP Multiple switching transistors A21 of the polar line GL are turned on at the same time; within this time interval, the external drive unit will provide a pixel gate turn-on signal through the film-on-chip package 150 to the corresponding gate line group GP in sequence. The multiple transmission lines HC of the multiple gate lines GL enable the multiple pixel transistors T of the multiple pixel columns Rspx corresponding to the multiple gate lines GL of the same gate line group GP to be turned on sequentially, thereby making the corresponding The plurality of pixel electrodes PE of the plurality of pixel columns Rspx of the plurality of gate lines GL of the same gate line group GP are charged to a specified potential.

舉例而言,閘極線組GP1的多條閘極線GL1~GL8在一個時間區間同步收到來自多工器G-MUX的閘極開啟訊號,而使得分別對應閘極線組GP1的多條閘極線GL1~GL8的多個開關電晶體A21同時被開啟;於此時間區間內,外部驅動單元會透過薄膜覆晶封裝150依時序提供畫素閘極開啟訊號至對應多條閘極線 GL1~GL8的多條傳輸線HC1~HC8,使得對應同一閘極線組GP1的多條閘極線GL1~GL8的多個畫素列Rspx的多個畫素電晶體T依時序被開啟,進而使對應同一閘極線組GP1的多條閘極線GL1~GL8的多個畫素列Rspx的多個畫素電極PE被充至指定電位。 For example, the multiple gate lines GL1~GL8 of the gate line group GP1 receive the gate open signal from the multiplexer G-MUX synchronously in a time interval, so that the multiple gate lines corresponding to the gate line group GP1 respectively The multiple switching transistors A21 of the gate lines GL1~GL8 are turned on at the same time; during this time interval, the external drive unit will provide pixel gate open signals to the corresponding multiple gate lines in sequence through the thin film chip-on-chip package 150 The plurality of transmission lines HC1~HC8 of GL1~GL8 enable the plurality of pixel transistors T of the plurality of pixel columns Rspx corresponding to the plurality of gate lines GL1~GL8 of the same gate line group GP1 to be turned on in time sequence, thereby enabling The plurality of pixel electrodes PE of the plurality of pixel columns Rspx corresponding to the plurality of gate lines GL1 - GL8 of the same gate line group GP1 are charged to a specified potential.

畫素陣列基板100的多條傳輸線HC包括多條第一傳輸線HCA,且每一第一傳輸線HCA的第一端HCAa及第二端HCAb分別電性連接至對應的一個接墊120及對應的一條匯流線BL。畫素陣列基板100的多條傳輸線HC還包括多條第二傳輸線HCB,其中每一第二傳輸線HCB的第一端HCBa與多個接墊120於結構上分離,且每一第二傳輸線HCB的第二端HCBb電性連接至對應的一條匯流線BL。 The plurality of transmission lines HC of the pixel array substrate 100 includes a plurality of first transmission lines HCA, and the first end HCAa and the second end HCAb of each first transmission line HCA are respectively electrically connected to a corresponding pad 120 and a corresponding one. Bus line BL. The plurality of transmission lines HC of the pixel array substrate 100 further includes a plurality of second transmission lines HCB, wherein the first end HCBa of each second transmission line HCB is structurally separated from the plurality of pads 120, and each second transmission line HCB The second end HCBb is electrically connected to a corresponding bus line BL.

值得一提的是,多條匯流線BL是設置在佈局面積較有餘裕的第二周邊區110b-2,多條第二傳輸線HCB是利用既有的多條第一傳輸線HCA及設置於第二周邊區110b-2的多條匯流線BL接收到來自薄膜覆晶封裝150的畫素閘極開啟訊號,而第二傳輸線HCB本身可不具有設置於第一周邊區110b-1的扇出走線段。藉此,在不過度影響第二周邊區110b-2在第一方向d1上的寬度W2(即,下邊框區的寬度)的情況下,畫素陣列基板100之第一周邊區110b-1在第一方向d1上的寬度W1(即,上邊框區的寬度)得以縮減。 It is worth mentioning that the plurality of bus lines BL are arranged in the second peripheral area 110b-2 with a relatively large layout area, and the plurality of second transmission lines HCB are arranged in the second peripheral area 110b-2 using the existing plurality of first transmission lines HCA and The plurality of bus lines BL in the peripheral region 110b-2 receive the pixel gate turn-on signal from the thin film chip-on-chip package 150, and the second transmission line HCB itself may not have a fan-out line segment disposed in the first peripheral region 110b-1. Thereby, without excessively affecting the width W2 of the second peripheral region 110b-2 in the first direction d1 (that is, the width of the lower frame region), the first peripheral region 110b-1 of the pixel array substrate 100 is The width W1 in the first direction d1 (ie, the width of the upper frame area) is reduced.

舉例而言,在本實施例中,多條匯流線BL包括在第一 方向d1上依序排列的多條匯流線BL1~BL8,多條第一傳輸線HCA包括傳輸線HC1~HC8,多條第二傳輸線HCB包括傳輸線HC17~HC24,其中,傳輸線HC17是利用既有的傳輸線HC1及設置於第二周邊區110b-2的匯流線BL1接收到來自薄膜覆晶封裝150的畫素閘極開啟訊號,傳輸線HC18是利用既有的傳輸線HC2及設置於第二周邊區110b-2的匯流線BL2接收到來自薄膜覆晶封裝150的畫素閘極開啟訊號,...,傳輸線HC24是利用既有的傳輸線HC8及設置於第二周邊區110b-2的匯流線BL8接收到來自薄膜覆晶封裝150的畫素閘極開啟訊號,但本發明不以此為限。 For example, in this embodiment, a plurality of bus lines BL are included in the first A plurality of bus lines BL1~BL8 arranged in sequence in the direction d1, a plurality of first transmission lines HCA include transmission lines HC1~HC8, and a plurality of second transmission lines HCB include transmission lines HC17~HC24, wherein the transmission line HC17 utilizes the existing transmission line HC1 And the bus line BL1 arranged in the second peripheral area 110b-2 receives the pixel gate turn-on signal from the film-on-chip package 150, and the transmission line HC18 utilizes the existing transmission line HC2 and is arranged in the second peripheral area 110b-2. The bus line BL2 receives the pixel gate turn-on signal from the thin film chip-on-chip package 150, . The pixel gate turn-on signal of the flip-chip package 150 , but the present invention is not limited thereto.

請參照圖1,畫素陣列基板100的多個接墊120包括電性連接至同一薄膜覆晶封裝150的接墊群G120,接墊群G120包括多個第一接墊121及多個第二接墊122,多個第一接墊121是接墊群G120之中最遠離第三周邊區110b-3的多個接墊120,而多個第二接墊122是接墊群G120之中最靠近第三周邊區110b-3的多個接墊120。在本實施例中,多條第一傳輸線HCA的多個第一端HCAa分別電性連接至接墊群G120的多個第一接墊121。 Referring to FIG. 1, the multiple pads 120 of the pixel array substrate 100 include a pad group G120 electrically connected to the same thin film chip-on-chip package 150, and the pad group G120 includes a plurality of first pads 121 and a plurality of second pads. The pads 122, the plurality of first pads 121 are the plurality of pads 120 farthest from the third peripheral region 110b-3 among the pad group G120, and the plurality of second pads 122 are the most distant among the pad group G120. The plurality of pads 120 are adjacent to the third peripheral region 110b-3. In this embodiment, the first ends HCAa of the first transmission lines HCA are electrically connected to the first pads 121 of the pad group G120 respectively.

在本實施例中,多條傳輸線HC更包括多個第三傳輸線HCC,其中多條第三傳輸線HCC的多個第一端HCCa分別電性連接至接墊群G120的多個第二接墊122,且多條第三傳輸線HCC的多個第二端HCCb分別電性連接至多條匯流線BL。在畫素陣列基板100的俯視圖中,多條第二傳輸線HCB位於多條第 一傳輸線HCA與多條第三傳輸線HCC之間。也就是說,具有扇出走線段HCA-F、HCC-F且與設置在左右最外側的接墊120電性連接的多群傳輸線HC之間至少會設有另一群傳輸線HC,且另一群傳輸線HC在第一周邊區110b-1不具扇出走線段。 In this embodiment, the plurality of transmission lines HC further includes a plurality of third transmission lines HCC, wherein the plurality of first ends HCCa of the plurality of third transmission lines HCC are respectively electrically connected to the plurality of second pads 122 of the pad group G120 , and the plurality of second terminals HCCb of the plurality of third transmission lines HCC are respectively electrically connected to the plurality of bus lines BL. In the top view of the pixel array substrate 100, the plurality of second transmission lines HCB are located Between a transmission line HCA and multiple third transmission lines HCC. That is to say, there will be at least another group of transmission lines HC between the groups of transmission lines HC having fan-out routing segments HCA-F, HCC-F and electrically connected to the left and right outermost pads 120, and the other group of transmission lines HC There is no fan-out line segment in the first peripheral region 110b-1.

舉例而言,在本實施例中,多條第一傳輸線HCA包括傳輸線HC1~HC8,多條第二傳輸線HCB包括傳輸線HC17~HC24及HC25~HC32,多條第三傳輸線HCC包括傳輸線HC9~HC16;在畫素陣列基板100的俯視圖中,於第一周邊區110b-1不具扇出走線段的傳輸線HC17~HC24及HC25~HC32位於具有扇出走線段HCA-F、HCC-F的多條傳輸線HC1~HC8與多條傳輸線HC9~HC16之間,但本發明不以此為限。 For example, in this embodiment, the multiple first transmission lines HCA include transmission lines HC1-HC8, the multiple second transmission lines HCB include transmission lines HC17-HC24 and HC25-HC32, and the multiple third transmission lines HCC include transmission lines HC9-HC16; In the top view of the pixel array substrate 100, the transmission lines HC17~HC24 and HC25~HC32 without fan-out routing segments in the first peripheral region 110b-1 are located on the multiple transmission lines HC1~HC8 with fan-out routing segments HCA-F and HCC-F and multiple transmission lines HC9~HC16, but the present invention is not limited thereto.

圖4為本發明一實施例的畫素陣列基板的剖面示意圖。圖4對應圖1的剖線I-I’。圖5為本發明一實施例的畫素陣列基板的剖面示意圖。圖5對應圖1的剖線II-II。 FIG. 4 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the present invention. Fig. 4 corresponds to section line I-I' of Fig. 1 . FIG. 5 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the present invention. FIG. 5 corresponds to the section line II-II of FIG. 1 .

請參照圖1及圖4,在本實施例中,每一第一傳輸線HCA包括扇出走線段HCA-F,多條匯流線BL及多條第一傳輸線HCA分別屬於第一導電層M1及第二導電層M2,絕緣層140設置於第一導電層M1與第二導電層M2之間,多條第一傳輸線HCA的多個第二端HCAb透過絕緣層140的多個接觸窗142分別電性連接至多條匯流線BL。特別是,多條第一傳輸線HCA的多個扇出走線段HCA-F及多個接觸窗142分別設置於第一周邊區110b-1及第二周邊區110b-2。也就是說,第一傳輸線HCA的扇 出走線段HCA-F及第一傳輸線HCA與匯流線BL的連接處是分別位於上邊框區及下邊框區,而非皆位於上邊框區。 Please refer to FIG. 1 and FIG. 4. In this embodiment, each first transmission line HCA includes a fan-out line segment HCA-F, and a plurality of bus lines BL and a plurality of first transmission lines HCA belong to the first conductive layer M1 and the second conductive layer respectively. The conductive layer M2, the insulating layer 140 is disposed between the first conductive layer M1 and the second conductive layer M2, the multiple second ends HCAb of the multiple first transmission lines HCA are electrically connected through the multiple contact windows 142 of the insulating layer 140 At most a plurality of bus lines BL. In particular, the plurality of fan-out segments HCA-F and the plurality of contact windows 142 of the plurality of first transmission lines HCA are respectively disposed in the first peripheral area 110b-1 and the second peripheral area 110b-2. That is, the fan of the first transmission line HCA The outgoing line segment HCA-F and the junction of the first transmission line HCA and the bus line BL are respectively located in the upper frame area and the lower frame area, not all of them are located in the upper frame area.

請參照圖1及圖5,在本實施例中,多條匯流線BL及多條第二傳輸線HCB分別屬於第一導電層M1及第二導電層M2,絕緣層140設置於第一導電層M1與第二導電層M2之間,多條第二傳輸線HCB的多個第二端HCBb透過絕緣層140的多個接觸窗144分別電性連接至多條匯流線BL,且多個接墊120及多個接觸窗144分別設置於第一周邊區110b-1及第二周邊區110b-2。也就是說,用以與薄膜覆晶封裝150接合的接墊120和第二傳輸線HCB與匯流線BL的連接處是分別位於上邊框區及下邊框區,而非皆位於上邊框區。 Please refer to FIG. 1 and FIG. 5 , in this embodiment, a plurality of bus lines BL and a plurality of second transmission lines HCB belong to the first conductive layer M1 and the second conductive layer M2 respectively, and the insulating layer 140 is disposed on the first conductive layer M1 Between the second conductive layer M2 and the plurality of second ends HCBb of the plurality of second transmission lines HCB are respectively electrically connected to the plurality of bus lines BL through the plurality of contact windows 144 of the insulating layer 140, and the plurality of pads 120 and the plurality of The contact windows 144 are respectively disposed on the first peripheral region 110b-1 and the second peripheral region 110b-2. That is to say, the bonding pads 120 for bonding with the thin film chip-on-chip package 150 and the connecting points of the second transmission line HCB and the bus line BL are respectively located in the upper frame area and the lower frame area, not both are located in the upper frame area.

100:畫素陣列基板 100:Pixel array substrate

110:基底 110: base

110a:主動區 110a: active area

110b-1:第一周邊區 110b-1: First peripheral area

110b-2:第二周邊區 110b-2: Second peripheral area

110b-3:第三周邊區 110b-3: The third peripheral area

110b-4:第四周邊區 110b-4: The fourth peripheral area

120:接墊 120: Pad

121:第一接墊 121: The first pad

122:第二接墊 122: Second pad

130:驅動元件 130: drive element

142、144:接觸窗 142, 144: contact window

150:薄膜覆晶封裝 150: Thin film chip-on-chip package

BL、BL1、BL2、BL8:匯流線 BL, BL1, BL2, BL8: bus lines

d1:第一方向 d1: the first direction

d2:第二方向 d2: second direction

G-MUX:多工器 G-MUX: multiplexer

GL、GL1、GL2、GL8、GL9、GL10、GL16、GL17、GL18、GL24、GL25、GL32:閘極線 GL, GL1, GL2, GL8, GL9, GL10, GL16, GL17, GL18, GL24, GL25, GL32: gate line

GP、GP1、GP2、GP3、GP4:閘極線組 GP, GP1, GP2, GP3, GP4: gate line group

G120:接墊群 G120: pad group

HC、HC1、HC2、HC8、HC9、HC10、HC16、HC17、HC18、HC24、HC25、HC26、HC32:傳輸線 HC, HC1, HC2, HC8, HC9, HC10, HC16, HC17, HC18, HC24, HC25, HC26, HC32: transmission line

HCA:第一傳輸線 HCA: first transmission line

HCAa、HCBa、HCCa:第一端 HCAa, HCBa, HCCa: first end

HCAb、HCBb、HCCb:第二端 HCAb, HCBb, HCCb: second end

HCA-F、HCC-F:扇出走線段 HCA-F, HCC-F: Fan-out line segment

HCB:第二傳輸線 HCB: second transmission line

HCC:第三傳輸線 HCC: third transmission line

R:局部 R: local

W1、W2:寬度 W1, W2: Width

I-I’、II-II’:剖線 I-I', II-II': section line

Claims (6)

一種畫素陣列基板,包括: 一基底,具有一主動區、一第一周邊區、一第二周邊區及一第三周邊區,其中該第一周邊區、該主動區及該第二周邊區在一第一方向上依序排列,該第三周邊區及該主動區在一第二方向上依序排列,且該第一方向與該第二方向交錯; 多個畫素,設置於該基底的該主動區,其中每一畫素包括一畫素電晶體及一畫素電極,該畫素電晶體具有一第一端、一第二端及一控制端,且該畫素電極電性連接至該畫素電晶體的該第二端; 多個接墊,設置於該基底的該第一周邊區; 多條匯流線,設置於該基底的該第二周邊區,且在該第一方向上排列; 一多工器,設置於該基底的該第三周邊區; 多條資料線,設置於該基底上,且在該第二方向上排列,其中該些資料線電性連接至該些畫素的多個畫素電晶體的多個第一端; 多條閘極線,設置於該基底上,且在該第一方向上排列,其中該些閘極線電性連接至該多工器; 多個開關電晶體,設置於該基底的該主動區,其中該些畫素排成多個畫素列,每一畫素列的多個畫素在該第二方向上排列,每一開關電晶體具有一第一端、一第二端及一控制端,每一該開關電晶體的該控制端電性連接至對應的一條閘極線,且每一該開關電晶體的該第二端電性連接至對應的一個畫素列的多個畫素的多個畫素電晶體的多個控制端;以及 多條傳輸線,設置於該基底上,且在該第二方向上排列,其中每一傳輸線電性連接至對應的一個開關電晶體的該第一端,該些傳輸線包括多條第一傳輸線,且每一第一傳輸線的一第一端及一第二端分別電性連接至對應的一個接墊及對應的一條匯流線。 A pixel array substrate, comprising: A substrate having an active area, a first peripheral area, a second peripheral area and a third peripheral area, wherein the first peripheral area, the active area and the second peripheral area are sequentially arranged in a first direction arranged, the third peripheral area and the active area are arranged sequentially in a second direction, and the first direction and the second direction are staggered; A plurality of pixels are arranged in the active area of the substrate, wherein each pixel includes a pixel transistor and a pixel electrode, and the pixel transistor has a first terminal, a second terminal and a control terminal , and the pixel electrode is electrically connected to the second end of the pixel transistor; a plurality of pads disposed on the first peripheral area of the substrate; a plurality of bus lines disposed on the second peripheral region of the substrate and arranged in the first direction; a multiplexer disposed on the third peripheral area of the substrate; a plurality of data lines arranged on the substrate and arranged in the second direction, wherein the data lines are electrically connected to a plurality of first ends of a plurality of pixel transistors of the pixels; a plurality of gate lines arranged on the substrate and arranged in the first direction, wherein the gate lines are electrically connected to the multiplexer; A plurality of switching transistors are arranged in the active area of the substrate, wherein the pixels are arranged in a plurality of pixel columns, and a plurality of pixels in each pixel column are arranged in the second direction, and each switching transistor The crystal has a first terminal, a second terminal and a control terminal, the control terminal of each switching transistor is electrically connected to a corresponding gate line, and the second terminal of each switching transistor is electrically A plurality of control terminals of a plurality of pixel transistors of a plurality of pixels connected to a corresponding pixel row; and a plurality of transmission lines arranged on the substrate and arranged in the second direction, wherein each transmission line is electrically connected to the first end of a corresponding switching transistor, the transmission lines include a plurality of first transmission lines, and A first end and a second end of each first transmission line are respectively electrically connected to a corresponding pad and a corresponding bus line. 如請求項1所述的畫素陣列基板,其中該些傳輸線更包括: 多條第二傳輸線,其中每一第二傳輸線的一第一端與該些接墊於結構上分離,且每一該第二傳輸線的一第二端電性連接至對應的一條匯流線。 The pixel array substrate as described in claim 1, wherein the transmission lines further include: A plurality of second transmission lines, wherein a first end of each second transmission line is structurally separated from the pads, and a second end of each second transmission line is electrically connected to a corresponding bus line. 如請求項2所述的畫素陣列基板,其中該些接墊包括電性連接至同一薄膜覆晶封裝的一接墊群,該接墊群包括多個第一接墊及多個第二接墊,該些第一接墊是該接墊群之中最遠離該第三周邊區的多個接墊,該些第二接墊是該接墊群之中最靠近該第三周邊區的多個接墊,該些第一傳輸線的多個第一端分別電性連接至該接墊群的該些第一接墊,該些傳輸線更包括: 多個第三傳輸線,其中該些第三傳輸線的多個第一端分別電性連接至該接墊群的該些第二接墊,且該些第三傳輸線的多個第二端分別電性連接至該些匯流線; 在該畫素陣列基板的俯視圖中,該些第二傳輸線位於該些第一傳輸線與該些第三傳輸線之間。 The pixel array substrate as claimed in claim 2, wherein the pads include a pad group electrically connected to the same thin film chip-on-chip package, and the pad group includes a plurality of first pads and a plurality of second pads Pads, the first pads are the plurality of pads in the group of pads that are farthest from the third peripheral area, and the second pads are the plurality of pads in the group of pads that are closest to the third peripheral area a plurality of pads, the plurality of first ends of the first transmission lines are respectively electrically connected to the first pads of the pad group, and the transmission lines further include: A plurality of third transmission lines, wherein a plurality of first ends of the third transmission lines are respectively electrically connected to the second pads of the pad group, and a plurality of second ends of the third transmission lines are respectively electrically connected connected to the bus lines; In the top view of the pixel array substrate, the second transmission lines are located between the first transmission lines and the third transmission lines. 如請求項2所述的畫素陣列基板,其中該些匯流線及該些第二傳輸線分別屬於一第一導電層及一第二導電層,一絕緣層設置於該第一導電層與該第二導電層之間,該些第二傳輸線的多個第二端透過該絕緣層的多個接觸窗分別電性連接至該些匯流線,且該些接墊及該些接觸窗分別設置於該第一周邊區及該第二周邊區。The pixel array substrate as described in claim 2, wherein the bus lines and the second transmission lines belong to a first conductive layer and a second conductive layer respectively, and an insulating layer is disposed on the first conductive layer and the second conductive layer Between the two conductive layers, the multiple second ends of the second transmission lines are respectively electrically connected to the bus lines through the multiple contact windows of the insulating layer, and the pads and the contact windows are respectively arranged on the The first peripheral area and the second peripheral area. 如請求項1所述的畫素陣列基板,其中每一該第一傳輸線包括一扇出走線段,該些匯流線及該些第一傳輸線分別屬於一第一導電層及一第二導電層,一絕緣層設置於該第一導電層與該第二導電層之間,該些第一傳輸線的多個第二端透過該絕緣層的多個接觸窗分別電性連接至該些匯流線,且該些第一傳輸線的多個扇出走線段及該些接觸窗分別設置於該第一周邊區及該第二周邊區。The pixel array substrate as described in claim 1, wherein each of the first transmission lines includes a fan-out line segment, the bus lines and the first transmission lines belong to a first conductive layer and a second conductive layer, respectively, and a The insulating layer is disposed between the first conductive layer and the second conductive layer, and the plurality of second ends of the first transmission lines are respectively electrically connected to the bus lines through the plurality of contact windows of the insulating layer, and the The plurality of fan-out routing segments of the first transmission lines and the contact windows are respectively disposed in the first peripheral region and the second peripheral region. 如請求項1所述的畫素陣列基板,其中在該畫素陣列基板的俯視圖中,該些畫素位於該些接墊與該些匯流線之間。The pixel array substrate as claimed in claim 1, wherein in the top view of the pixel array substrate, the pixels are located between the pads and the bus lines.
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WO2021238787A1 (en) * 2020-05-27 2021-12-02 京东方科技集团股份有限公司 Display substrate, display panel, display apparatus, and display driving method
WO2021258911A1 (en) * 2020-06-22 2021-12-30 京东方科技集团股份有限公司 Display substrate and display device
TW202207189A (en) * 2020-08-03 2022-02-16 友達光電股份有限公司 Pixel array substrate

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