TWI753321B - 改良式晶圓狀感測器及晶圓狀基體及感測器的製造方法 - Google Patents
改良式晶圓狀感測器及晶圓狀基體及感測器的製造方法 Download PDFInfo
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Abstract
一種晶圓狀半導體感測器,包括一晶圓狀基體,係由複數層的化學硬化玻璃形成;以及一電子模組,係耦合於該晶圓狀基體中之一凹袋且含有一感測器。
Description
本申請係基於且主張於2018年11月14日提交的美國臨時專利申請案序號第62/767,251號之優先權,其整體內容茲以提述方式納入。
半導體處理系統的特點在於極其乾淨的環境及極其精密的半導體晶圓移動。工業廣泛依賴於高精密度機器人系統以所需的精密度移動一半導體處理系統中之各個處理站的基體,例如半導體晶圓。
過去,已嘗試提供晶圓形狀的晶圓狀感測器,其可以經移動而通過該半導體處理系統以在該半導體處理系統中無線地傳遞訊息。如本文中所使用之「晶圓狀(wafer-like)」旨在表示半導體晶圓形式的感測器。過去亦已嘗試提供包括附加類型的檢測器的無線晶圓狀感測器,以允許該晶圓狀感測器測量該半導體處理系統的處理環境中的許多內部條件。
無線晶圓狀感測器使得測量操作能夠在遍及處理環境中的各個點進行,同時減少內部環境的干擾,並減少晶圓操作機制及製造過程(例如,烘烤、蝕刻、物理氣相沉積、化學氣相沉積、塗層、沖洗、乾燥等)的擾動。例如,該無線晶圓狀感測器不需要被洩氣或是被抽空的一真空室;其對於超乾淨
環境造成之任何汙染風險亦不會高於正常處理過程所遭受者。該無線晶圓狀感測器構成因素使得處理條件的測量能夠帶有最小限度的觀測不確定性。
無線基體狀感測器的示例包括那些以商標名稱出售的感測器:ReticleSense® Airborne Particle Sensor、ReticleSense® Auto Multi SensorTM、WaferSense® Airborne Particle SensorTM、WaferSense® Auto Multi SensorTM、WaferSense® Auto Teaching System、WaferSense® Auto Vibration System、WaferSense® Auto Gapping System、WaferSense® Auto Leveling System 2 Vertical。所有這些感測器都可以從明尼蘇達州金谷市的CyberOptics公司獲得。此類無線基體狀感測器中的任一個或全部皆可以結合本文中所述的各種實施例。
上述僅為提供一般背景資訊,並不旨在用於幫助判定請求保護之申請標的之範圍。請求保護之申請標的不限於解決背景技術中所指出的任何或全部缺點之實施態樣。
在一個示例中,本發明係為一種晶圓狀半導體感測器,包括:一晶圓狀基體,係由複數層的化學硬化玻璃形成;以及一電子模組,係安裝於該晶圓狀基體中之單一個凹袋且含有一殼體、一電路、一電源以及一感測器。
在另一示例中,本發明係為一種晶圓狀半導體感測器,包括一上環形層,係由化學硬化玻璃形成;以及一下層,係由化學硬化玻璃形成;其中,該上環形層係化學結合於該下層。在另一示例中,本發明係為一種晶圓狀半導體感測器,係形成有由化學硬化玻璃形成之一上環形層,該上環形層係層疊於
由化學硬化玻璃形成之一下層之上,以及該上環形層之內周部係界定單一個凹袋,該凹袋係容納耦合於該下層之一電子模組。
本發明內容係經提供而以一簡化形式來介紹本發明的一系列概念,這些概念將在下面的實施方式中進一步描述。本發明內容並非旨在識別該請求保護之申請標的的關鍵特徵或必要特徵,並非旨在描述該請求保護之申請標的的每個揭露的實施例或每個實施態樣,以及並非旨在用於幫助判定該請求保護之申請標的之範圍。隨著描述之進行,許多其他新穎的優點、特徵以及關係將變得清楚明白。隨後的圖式以及描述係更具體地舉例說明說明性實施例。
100:無線晶圓狀感測器
102:晶圓狀基體
104:電子殼體
106:孔
108:內周部
110:環形層
112:下層
200:感測器
202:晶圓狀基體
204:電子設備
210:環形層
212:下層
214:其他
216:殼體
217:感測器
218:電路
220:電源
222:其他
400:方法
402:方塊
404:上環形層
406:下層
408:其他設計
410:CHG
412:碳纖維複合材料
414:矽
416:其他材料
420:方塊
422:防爆膜
424:被塗漆的內表面
426:其他設計
430:方塊
第1圖為一無線晶圓狀感測器的透視示意圖;第2圖為一無線晶圓狀感測器的爆炸示意圖;第3圖為示出一晶圓狀感測器的一個示例的簡化方塊示意圖;第4圖為示出一製造一晶圓狀感測器之方法的一個示例的流程示意圖。
儘管以上已識別之圖式闡述了所揭露的申請標的的一個以上的實施例,但是也還可以想到其他實施例,如本揭露內容中所指出的。在所有情況下,本揭露內容透過代表而非限制的方式提出了所揭露的請求保護之申請標的。應當理解,本技術領域具有通常知識者可以設計出許多其他修改和實施例,這些修改和實施例皆落入本揭露內容之原理的範圍和精神內。
當建構必須穿越通過一半導體處理系統的基體狀感測器時,其上安裝有該感測器的該基體係至關重要。該晶圓狀基體必須是平坦的,以允許有效的真空吸附,使得該晶圓狀感測器可以在各種測試操作期間充分地保持在適當的位置。該晶圓狀基體必須不能汙染該半導體處理系統(例如,製造工具)。該晶圓狀基體必須是光滑的並且尺寸穩定的。該晶圓狀基體材料必須不能干擾該無線晶圓狀感測器與該控制系統或是其他遠程設備之間的射頻(radio frequency,rf)通訊。
非常少有材料可以滿足這些要求。矽滿足了大多數的這些要求,但它太容易破裂。碳纖維複合材料非常穩定以及堅固且不會破裂,然而,它通常不夠光滑及不夠平坦而無法允許進行可靠的真空吸附。此外,碳纖維複合物可能會干擾射頻通訊。因此,一種包含防止上述問題的材料的晶圓狀感測器是需要的。本文中係描述如是之晶圓狀感測器。
本文中描述的實施例通常在建構用於無線晶圓狀感測器的晶圓狀基體中採用化學硬化玻璃(chemically-hardened glass,CHG)。CHG係為可用的,其厚度可製成可模擬矽晶圓的厚度。在一個示例中,該晶圓狀基體係形成為由CHG的一底盤及一環形頂件組成的夾層。該夾層之實施例具有許多優點:1)其在兩個CHG層之間含有塗漆的CHG表面,因此防止塗漆的表面與半導體處理的組件(例如,製造工具)接觸;2)其允許在該夾層中加入一防爆膜,以防止CHG碎片在斷裂時散開;以及3)其允許一堅固的0.8mm厚的外部區域以及一更薄的0.4mm厚的內部區域,因此允許一整體更薄的晶圓狀感測器的建構。CHG能以多種商標名稱而取得,例如Gorilla glass、Dragontail以及Xensation。
第1圖為示出一無線晶圓狀感測器的一個示例的透視示意圖。無線晶圓狀感測器100包括晶圓狀基體102,其大小及形狀被製成一半導體晶圓。在一個示例中,晶圓狀基體102具有一落入150-300mm範圍內的直徑。
感測器100更包括設置於該感測器100的一中央區域中的一電子殼體104。就本申請而言,「殼體」一詞可以與「模組」一詞互換使用。該殼體104中的電子設備可以是現今可用或之後開發的任何合適的電子設備,這些電子設備提供與感測一半導體處理中的任何合適的參數以及無線傳輸關於該感測到的參數的訊息有關的特徵,例如但不限於感測器、測量電路、通訊電路、電源等。這種感測器的示例係為由明尼蘇達州金谷市的CyberOptics公司提供的Wafersense®系列的感測器。參數可以是,例如,位置訊息〔例如,水平、垂直以及傾斜位置(例如,沿著X、Y、Z軸的位置)〕、溼度、顆粒的存在、速度、加速度、振動、調平(leveling)等。
第2圖為示出一無線晶圓狀感測器的一個示例的爆炸示意圖。晶圓狀感測器100包括電子殼體104、內徑(內周部108)、環形層110以及底層(下層112)。在一個示例中,感測器100係由鍵合層(環形層110)和鍵合層(下層112)形成。可以通過將鍵合層(環形層110)和鍵合層(下層112)與一合適的環氧樹脂層疊在一起來完成該鍵合。然而,任何其他合適的技術也可以用於將鍵合層(環形層110)和鍵合層(下層112)鍵合在一起。在一個示例中,一防爆膜也被鍵合在鍵合層(環形層110)和鍵合層(下層112)之間,以確保若感測器100的化學硬化玻璃晶圓狀基體破裂,則碎片在該半導體處理或組件(例如,製造工具)中將不會位移。在另一示例中,該環氧樹脂是不透明的。在一個示例中,該環氧樹脂是透明的(連同CHG)。在其他示例中,該環氧樹脂並
非不透明的,且內表面〔面向鍵合層(環形層110)的鍵合層(下層112)之表面以及面向鍵合層(下層112)的鍵合層(環形層110)之表面〕之一或二者可以塗漆或以其他方式塗覆有一不透明層,以確保光不會穿過該晶圓狀基體。例如,可以將內層塗成黑色,從而使感測器100不僅可以防止光直射,亦可防止那些塗層在半導體處理中受到損壞,例如,該塗層會被刮傷或削除,從而允許光穿過。
環形層110具有一穿過其的孔106,該孔106係由內周部108界定。該孔106建立了供電子殼體104容納並鍵合至下層112的一區域。此外,通過將環形層110以及下層112夾在中間,感測器100可以是通常更薄的設計,從而降低了成本與材料。在一個示例中,感測器100於其外部,即,包含環形層110及下層112兩者的部分,具有0.8mm的厚度;於其內部,即,當環形層110和下層112鍵合時由內周部108界定的部分,厚度為0.4mm。在該實施例中,環形層110、下層112中的每一個可以具有0.4mm的厚度。在另一示例中,環形層110具有0.5mm的厚度,而下層112具有0.3mm的厚度。在一個示例中,環形層110與下層112兩者均於其各自的外周部上包含有一半缺口,使得在製造期間感測器100的精密對準是可能的。
第3圖為示出一無線晶圓狀感測器的一個示例的簡化方塊示意圖。感測器200包括晶圓狀基體202和電子設備204。晶圓狀基體202包括環形層210、下層212以及其他214。晶圓狀基體202可以類似於晶圓狀基體102。環形層210以及下層212可以類似於環形層110以及下層112。晶圓狀基體202可以包括環形層210以及下層212的塗漆內表面。晶圓狀基體202可以是透明的。可以在環形層210以及下層212之間放置一防爆膜。環形層210可以包含一內周部,該內周部形成
供電子設備204容納並鍵合至下層212上的一區域。晶圓狀基體202於其外部可以具有0.8mm的厚度以及在其內部具有0.4mm的厚度。晶圓狀基體202可以由CHG製成。在一個示例中,晶圓狀基體202可以是一夾層設計,其中環形層210以及下層212係通過使用例如環氧樹脂鍵合和/或層疊在一起。其他設計(其他214)亦可包括鍵合至包含不同材料的其他層和/或圓盤的CHG的單或多層和/或圓盤,例如但不限於:碳纖維複合材料、矽、石英、其他玻璃以及任何其他合適的材料。
電子設備204包括殼體216、感測器217、電路218、電源220以及其他222。殼體216替電子設備204的內部元件提供一保護蓋,並且可由任何合適的材料形成,包括但不限於:鋁、碳纖維複合材料或是CHG。在一個示例中,殼體216包含CHG並且被塗成不透明,使得光無法穿過其中。在另一示例中,殼體216包含CHG並且是透明的。感測器217經配置而感測位置訊息及/或半導體處理參數。此類參數可以包括,例如,位置訊息〔例如,水平、垂直以及傾斜位置(例如,沿著X、Y、Z軸的位置)〕以及其他相關數據,例如,溼度、顆粒的存在、速度、加速度、振動、調平等。感測器可以是適用於半導體處理的任何數量的感測器,包括ReticleSense® Airborne Particle Sensor、ReticleSense® Auto Multi SensorTM、WaferSense® Airborne Particle SensorTM、WaferSense® Auto Multi SensorTM、WaferSense® Auto Teaching System、WaferSense® Auto Vibration System、WaferSense® Auto Gapping System、WaferSense® Auto Leveling System 2 Vertical,所有這些感測器都可以從明尼蘇達州金谷市的CyberOptics公司獲得,連同本文中提到的任何其他感測器。
電路218可以包括適合於無線晶圓狀感測器的任何電路。電路218可以包括通訊電路,該通訊電路係配置為(例如,經由一無線或藍牙協議)將感測到的位置數據及/或環境參數傳遞至一控制室或其他遠程設備,例如,向一用戶介面提供一指示。電路218可以包括配置為接收原始感測器數據及生成指示一所測量的參數(例如,在X、Y或Z軸上的位置)的輸出的測量電路。電路218可以包括一電路板(例如,一印刷電路板)。電源220係配置為給電子設備204的組件供電,並且可以包括充電和非充電電池。其他222可以包括任何其他合適的電子組件。例如,其他222可以包括一延長範圍的天線,其係配置為提供更遠距離的通訊能力。
第4圖為示出一製造一無線晶圓狀感測器之方法的一個示例的流程示意圖。方法400從方塊402開始,在方塊402處,形成一晶圓狀基體。該晶圓狀基體可以包含一上環形層404和一下層406〔例如,鍵合層(環形層110/210)和鍵合層(下層112/212)。該晶圓狀基體可以包含其他設計408,例如變化材料的多層。該晶圓狀基體可以由CHG 410、碳纖維複合材料412、矽414或其他材料416形成,例如但不限於石英或其他類型的玻璃。在一個示例中,該晶圓狀基體係由一CHG環形層以及一CHG下層組成。在另一示例中,該晶圓狀基體包含變化材料的多層,例如,一CHG層和一個或多個其他材料層,例如但不限於:碳纖維複合材料、矽、石英、其他玻璃等。在一個示例中,該晶圓狀基體的外周部係包含一半缺口。
方法400在方塊420處進行,在方塊420處,層被鍵合或以其他方式耦合在一起。可以使用例如環氧樹脂將各層鍵合,例如,層疊。一防爆膜422可以放置在各層之間,例如一環形層以及一下層。層的內表面可以被塗漆424,使
得沒有光穿過(例如,不透明的)。可以使用其他設計426,例如,在方塊420處,用於鍵合層的環氧樹脂可以是透明的或是不透明的,這些層可以是透明的或是不透明的、以及適合於無線晶圓狀感測器的任何其他設計。
方法400在方塊430處繼續,在方塊430處,電子殼體係容納並鍵合在該晶圓狀基體(方塊430)上。在一個示例中,該晶圓狀基體係由一上環形層以及一下層形成,該上環形層具有內周部,其界定該電子殼體所將位在的一凹袋。在一個示例中,該電子殼體可以化學鍵合至該基體,例如但不限於環氧樹脂或任何其他合適的化學結合方法。
方法400的組件可以類似於本文中所描述的那些。例如,在方塊402處,晶圓狀基體可以是晶圓狀基體102、晶圓狀基體202或是由鍵合層(環形層110)和鍵合層(下層112)及/或鍵合層(環形層210)和鍵合層(下層212)(如第2圖和第3圖所述)形成的晶圓狀基體。在方塊430處,電子殼體可以是,例如,電子殼體104或電子殼體(電子設備204)。
應當注意的是,儘管以某種順序描述了方法400,但是基於說明性的目的和為了解釋清楚的目的,本技術領域具有通常知識者將理解,方法400的步驟可以以變化的順序來完成,且本示意圖並沒有旨在指定特定的順序。
根據本發明的實施例,上述各種特徵可以以多種不同的組合進行結合。在一個示例中,可以將多塊CHG層疊在一起,其中一些可能不是完整的圓盤。在另一示例中,CHG的圓盤可以鍵合至不同材料的其他圓盤,例如碳纖維複合材料、矽、石英等。在另一示例中,該殼體的中心部可以建構成幾乎無限數量的變化形式。因此,該CHG晶圓可以鍵合至不同幾何形狀且由大量不同材料製成的中央電子殼體。
儘管已經用特定於結構特徵及/或方法動作的語言描述了申請標的,但是應該理解,於所附之申請專利範圍中所定義的申請標的不必限於上述特定特徵或動作。相反地,上述特定特徵和動作係被揭露為實現該申請專利範圍的示例形式。
100:無線晶圓狀感測器
102:晶圓狀基體
104:電子殼體
106:孔
108:內周部
Claims (19)
- 一種晶圓狀半導體感測器,包含:一晶圓狀基體,係由複數層的化學硬化玻璃形成,該晶圓狀基體於其中界定單一個凹袋;以及一電子模組,係耦合於該晶圓狀基體之單一個該凹袋且含有一殼體、一電路、一電源以及一感測器。
- 如請求項1所述之晶圓狀半導體感測器,其中該化學硬化玻璃係提供改良真空吸附。
- 如請求項1所述之晶圓狀半導體感測器,更包含設置於該複數層的化學硬化玻璃之間之一材料層。
- 如請求項3所述之晶圓狀半導體感測器,其中該材料層包括一不透明塗層。
- 如請求項3所述之晶圓狀半導體感測器,其中該材料層包括一防爆膜。
- 如請求項1所述之晶圓狀半導體感測器,其中該化學硬化玻璃係提供減少射頻干擾。
- 一種晶圓狀基體,包含:一上環形層,係由化學硬化玻璃形成;以及一下層,係由化學硬化玻璃形成;其中,該上環形層係化學結合於該下層。
- 如請求項7所述之晶圓狀基體,其中該上環形層係具有一內周部,該內周部係界定一區域,該區域係經配置而容納一電子模組。
- 如請求項7所述之晶圓狀基體,其中該上環形層的厚度為0.4mm。
- 如請求項7所述之晶圓狀基體,其中該下層的厚度為0.4mm。
- 如請求項7所述之晶圓狀基體,更包含一不透明塗層,係介於該上環形層及該下層之間。
- 如請求項7所述之晶圓狀基體,更包含一防爆膜,係介於該上環形層及該下層之間。
- 如請求項7所述之晶圓狀基體,其中該上環形層之一外周部係具有一半缺口。
- 如請求項7所述之晶圓狀基體,其中該下層之一外周部係具有一半缺口。
- 如請求項7所述之晶圓狀基體,更包括厚度為0.4mm之一凹部。
- 如請求項7所述之晶圓狀基體,其中該上環形層係藉由環氧樹脂而化學結合於該下層。
- 一種製造晶圓狀感測器的方法,該方法包含:提供一化學硬化基底玻璃層;提供一化學硬化上環形玻璃層;將該化學硬化基底玻璃層鍵合於該化學硬化上環形玻璃層以提供具有單一個凹袋之一化學硬化晶圓狀基體;以及將一電子設備外殼安裝於單一個該凹袋內。
- 如請求項17所述之方法,更包含將一防爆層施加於該化學硬化基底玻璃層以及該化學硬化上環形玻璃層中的至少一個。
- 如請求項17所述之方法,更包含將一不透明塗層施加於該化學硬化基底玻璃層以及該化學硬化上環形玻璃層中的至少一個。
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US (1) | US12074044B2 (zh) |
EP (1) | EP3881350A4 (zh) |
JP (1) | JP7195427B2 (zh) |
KR (1) | KR102616976B1 (zh) |
CN (1) | CN113016057B (zh) |
IL (1) | IL283082B2 (zh) |
SG (1) | SG11202104665XA (zh) |
TW (1) | TWI753321B (zh) |
WO (1) | WO2020102187A1 (zh) |
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US11373890B2 (en) * | 2018-12-17 | 2022-06-28 | Applied Materials, Inc. | Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing |
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EP3881350A1 (en) | 2021-09-22 |
SG11202104665XA (en) | 2021-06-29 |
IL283082B2 (en) | 2024-09-01 |
WO2020102187A1 (en) | 2020-05-22 |
JP7195427B2 (ja) | 2022-12-23 |
KR102616976B1 (ko) | 2023-12-21 |
JP2022508112A (ja) | 2022-01-19 |
US20200152494A1 (en) | 2020-05-14 |
IL283082B1 (en) | 2024-05-01 |
IL283082A (en) | 2021-06-30 |
TW202041994A (zh) | 2020-11-16 |
CN113016057B (zh) | 2024-05-17 |
CN113016057A (zh) | 2021-06-22 |
EP3881350A4 (en) | 2022-07-27 |
US12074044B2 (en) | 2024-08-27 |
KR20210066925A (ko) | 2021-06-07 |
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