TWI749848B - 阻劑組成物及圖案形成方法 - Google Patents

阻劑組成物及圖案形成方法 Download PDF

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Publication number
TWI749848B
TWI749848B TW109138516A TW109138516A TWI749848B TW I749848 B TWI749848 B TW I749848B TW 109138516 A TW109138516 A TW 109138516A TW 109138516 A TW109138516 A TW 109138516A TW I749848 B TWI749848 B TW I749848B
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TW
Taiwan
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group
hydrocarbon group
formula
carbon atoms
cyclic
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TW109138516A
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English (en)
Chinese (zh)
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TW202122380A (zh
Inventor
阿達鉄平
小林知洋
及川健一
大橋正樹
藤原敬之
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日商信越化學工業股份有限公司
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Publication of TW202122380A publication Critical patent/TW202122380A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW109138516A 2019-11-07 2020-11-05 阻劑組成物及圖案形成方法 TWI749848B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-202238 2019-11-07
JP2019202238A JP7256730B2 (ja) 2019-11-07 2019-11-07 レジスト組成物及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW202122380A TW202122380A (zh) 2021-06-16
TWI749848B true TWI749848B (zh) 2021-12-11

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Family Applications (1)

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TW109138516A TWI749848B (zh) 2019-11-07 2020-11-05 阻劑組成物及圖案形成方法

Country Status (4)

Country Link
JP (2) JP7256730B2 (ja)
KR (1) KR102506110B1 (ja)
CN (1) CN112782935A (ja)
TW (1) TWI749848B (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201815752A (zh) * 2016-08-31 2018-05-01 日商信越化學工業股份有限公司 鋶化合物、光阻組成物及圖案形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5168830B2 (ja) 2006-06-30 2013-03-27 宇部興産株式会社 テトラヒドロピラン−４−オン化合物の製法
JP4858714B2 (ja) 2006-10-04 2012-01-18 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP4435196B2 (ja) 2007-03-29 2010-03-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5399639B2 (ja) 2008-02-18 2014-01-29 東京応化工業株式会社 レジスト組成物並びにレジストパターン形成方法
KR101092508B1 (ko) 2010-05-18 2011-12-13 주식회사 티엘아이 인가되는 전압레벨에 따라 연결 형태가 변화시키는 엘이디 조명장치
KR101185689B1 (ko) 2010-12-23 2012-09-24 경북대학교 산학협력단 광학계용 광경로감지장치
JP6217561B2 (ja) * 2014-08-21 2017-10-25 信越化学工業株式会社 新規オニウム塩化合物及びレジスト組成物並びにパターン形成方法
JP6370265B2 (ja) * 2015-07-09 2018-08-08 信越化学工業株式会社 重合性モノマー、高分子化合物、ポジ型レジスト材料、及びパターン形成方法
JP6531723B2 (ja) * 2016-06-29 2019-06-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6609225B2 (ja) 2016-07-22 2019-11-20 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6589795B2 (ja) * 2016-09-27 2019-10-16 信越化学工業株式会社 スルホニウム塩、レジスト組成物及びパターン形成方法
JP7044011B2 (ja) * 2017-09-13 2022-03-30 信越化学工業株式会社 重合性単量体、重合体、レジスト材料、及びパターン形成方法
JP7010260B2 (ja) * 2018-04-18 2022-01-26 信越化学工業株式会社 光酸発生剤、化学増幅レジスト材料及びパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201815752A (zh) * 2016-08-31 2018-05-01 日商信越化學工業股份有限公司 鋶化合物、光阻組成物及圖案形成方法

Also Published As

Publication number Publication date
JP2021076663A (ja) 2021-05-20
JP7256730B2 (ja) 2023-04-12
KR102506110B1 (ko) 2023-03-03
CN112782935A (zh) 2021-05-11
KR20210055629A (ko) 2021-05-17
JP7411838B2 (ja) 2024-01-11
TW202122380A (zh) 2021-06-16
JP2023075122A (ja) 2023-05-30

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