TWI749825B - Sweep generator circuit - Google Patents

Sweep generator circuit Download PDF

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TWI749825B
TWI749825B TW109136962A TW109136962A TWI749825B TW I749825 B TWI749825 B TW I749825B TW 109136962 A TW109136962 A TW 109136962A TW 109136962 A TW109136962 A TW 109136962A TW I749825 B TWI749825 B TW I749825B
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transistor
ramp
terminal
voltage
signal
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TW109136962A
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TW202218331A (en
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陳彥儒
洪嘉澤
劉恩池
莊錦棠
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友達光電股份有限公司
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Priority to CN202110270595.2A priority patent/CN112967672B/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

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  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electronic Switches (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

A sweep generator circuit including a driving stage and a buffer stage is provided. The driving stage receives a switch signal and a reset signal to provide a sweep reference voltage. The buffer stage receives the sweep reference voltage to provide a sweep signal in response to the sweep reference voltage. The sweep signal is dropped from a preset level to a stop level in response to a level switching of the reset signal.

Description

斜波產生電路Ramp generation circuit

本發明是有關於一種斜波產生電路,且特別是有關於一種微型發光二極體顯示器之斜波產生電路。The present invention relates to a ramp wave generating circuit, and more particularly to a ramp wave generating circuit of a miniature light emitting diode display.

近年來自發光顯示器崛起,其中有機發光二極體顯示器(OLED)與量子點發光二極體顯示器(QLED)競起角逐液晶顯示器(LCD)在顯示面板的獨占地位,並且微型發光二極體(Micro-LED)顯示器基於其眾多優異的元件特性,有望成為次世代顯示技術的主流。In recent years, self-luminous displays have risen. Among them, organic light-emitting diode displays (OLED) and quantum dot light-emitting diode displays (QLED) compete for the monopoly of liquid crystal displays (LCD) in display panels. -LED) display is expected to become the mainstream of next-generation display technology based on its many excellent component characteristics.

在微型發光二極體顯示器中,畫素電路可自外部的數位類比轉換器接收斜波信號且利用斜波信號及寫入的資料決定二極體的電流寬度。並且,數位類比轉換器是將現場可程式化邏輯閘陣列(FPGA)提供的數位控制信號轉換為類比信號,以產生出需要的波型。但是,上述方式有著較為複雜的驅動架構與更高的成本。In a miniature light-emitting diode display, the pixel circuit can receive a ramp signal from an external digital-to-analog converter and use the ramp signal and written data to determine the current width of the diode. In addition, the digital-to-analog converter converts the digital control signal provided by the field programmable logic gate array (FPGA) into an analog signal to generate the required waveform. However, the above method has a more complicated drive structure and higher cost.

本發明提供一種斜波產生電路,具有較簡單的電路結構,因此不須高成本與控制複雜的數位類比轉換器,以降低整體的硬體成本及控制複雜度。The present invention provides a ramp wave generating circuit, which has a relatively simple circuit structure, and therefore does not require a digital-to-analog converter with high cost and complicated control, so as to reduce the overall hardware cost and control complexity.

本發明的斜波產生電路,包括驅動級及緩衝級。驅動級接收開關信號及重置信號,以提供斜波參考電壓。緩衝級接收斜波參考電壓,以反應斜波參考電壓提供斜波信號。斜波信號反應於重置信號的準位切換自預設準位下降至停止準位。The ramp wave generating circuit of the present invention includes a driver stage and a buffer stage. The driver stage receives the switch signal and the reset signal to provide a ramp reference voltage. The buffer stage receives the ramp reference voltage and provides a ramp signal in response to the ramp reference voltage. The ramp signal reflects the level switch of the reset signal from the preset level to the stop level.

基於上述,本發明實施例的斜波產生電路,斜波產生電路以具有較簡單的電路結構的驅動級及緩衝器所構成,藉此不須高成本與控制複雜的數位類比轉換器,以降低整體的硬體成本及控制複雜度。Based on the foregoing, in the ramp wave generating circuit of the embodiment of the present invention, the ramp wave generating circuit is composed of a driver stage and a buffer with a relatively simple circuit structure, thereby eliminating the need for high cost and complicated control of digital-to-analog converters, thereby reducing the overall The cost of hardware and the complexity of control.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meaning in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

應當理解,儘管術語”第一”、”第二”、”第三”等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的”第一元件”、”部件”、”區域”、”層”或”部分”可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, and/or Or part should not be restricted by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, the “first element”, “component”, “region”, “layer” or “portion” discussed below may be referred to as a second element, component, region, layer or section without departing from the teachings herein.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式”一”、”一個”和”該”旨在包括複數形式,包括”至少一個”。”或”表示”及/或”。如本文所使用的,術語”及/或”包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語”包括”及/或”包括”指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used here is only for the purpose of describing specific embodiments and is not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one." "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the related listed items. It should also be understood that when used in this specification, the terms "including" and/or "including" designate the presence of the features, regions, wholes, steps, operations, elements, and/or components, but do not exclude one or more The existence or addition of other features, regions as a whole, steps, operations, elements, components, and/or combinations thereof.

圖1為依據本發明一實施例的斜波產生電路的系統示意圖。請參照圖1,在本發明實施例中,斜波產生電路100可應用於顯示器中,特別是主動式微型發光二極體顯示器,並且提供斜波信號V SWEEP至顯示面板(未繪示)中的畫素PX,其中斜波產生電路100可以配置於顯示器的驅動電路(未繪示)中,例如配置於顯示器的源極驅動器(未繪示)中,但本發明實施例不以此為限。 FIG. 1 is a system schematic diagram of a ramp wave generating circuit according to an embodiment of the present invention. Referring to FIG. 1, in an embodiment of the present invention, the ramp wave generating circuit 100 can be applied to a display, especially an active micro light emitting diode display, and provides a ramp signal V SWEEP to a display panel (not shown) Pixel PX, where the ramp wave generating circuit 100 can be configured in the drive circuit (not shown) of the display, for example, in the source driver (not shown) of the display, but the embodiment of the present invention is not limited to this .

在本實施中,斜波產生電路100包括驅動級110及緩衝級120。驅動級110接收開關信號SW及重置信號RESET,以提供斜波參考電壓Vx,並且緩衝級120接收斜波參考電壓Vx,以反應斜波參考電壓Vx提供斜波信號V SWEEP。其中,斜波信號V SWEEP反應於重置信號RESET的準位切換自預設準位(如圖2所示VP2)下降至停止準位(如圖2所示VT2)。 In this embodiment, the ramp wave generating circuit 100 includes a driver stage 110 and a buffer stage 120. The driver stage 110 receives the switch signal SW and the reset signal RESET to provide a ramp reference voltage Vx, and the buffer stage 120 receives the ramp reference voltage Vx to provide a ramp signal V SWEEP in response to the ramp reference voltage Vx. Among them, the ramp signal V SWEEP reflects the level switch of the reset signal RESET from the preset level (VP2 shown in FIG. 2) to the stop level (VT2 shown in FIG. 2).

在本實施例中,驅動級110僅由電晶體及電容構成,並且及緩衝級120僅由電晶體構成,因此斜波產生電路100具有較簡單的電路結構,藉此不須高成本與控制複雜的數位類比轉換器,以降低整體的硬體成本及控制複雜度。In this embodiment, the driver stage 110 is only composed of transistors and capacitors, and the buffer stage 120 is only composed of transistors. Therefore, the ramp wave generating circuit 100 has a simpler circuit structure, thereby eliminating the need for high cost and complicated control. Digital-to-analog converter to reduce overall hardware cost and control complexity.

在本實施例中,驅動級110包括第一電晶體T1、第二電晶體T2、第三電晶體T3、第一電容C1及第二電容C2。第一電容C1具有第一端、以及耦接至斜波參考電壓Vx的第二端。第一電晶體T1具有耦接第一電容C1的第二端的第一端、接收閘極低電壓VGL的第二端、以及耦接第一電容C1的第一端的控制端。In this embodiment, the driving stage 110 includes a first transistor T1, a second transistor T2, a third transistor T3, a first capacitor C1, and a second capacitor C2. The first capacitor C1 has a first terminal and a second terminal coupled to the ramp reference voltage Vx. The first transistor T1 has a first terminal coupled to the second terminal of the first capacitor C1, a second terminal receiving the gate low voltage VGL, and a control terminal coupled to the first terminal of the first capacitor C1.

第二電晶體T2,具有接收第一電壓V1的第一端、耦接第一電容C1的第二端的第二端、以及接收重置信號RESET的控制端。第三電晶體T3具有接收第一偏壓VB1的第一端、耦接第一電容C1的第一端的第二端、以及接收開關信號SW的控制端。第二電容C2耦接於斜波參考電壓Vx與閘極低電壓VGL之間。The second transistor T2 has a first terminal receiving the first voltage V1, a second terminal coupled to the second terminal of the first capacitor C1, and a control terminal receiving the reset signal RESET. The third transistor T3 has a first terminal receiving the first bias voltage VB1, a second terminal coupled to the first terminal of the first capacitor C1, and a control terminal receiving the switch signal SW. The second capacitor C2 is coupled between the ramp reference voltage Vx and the gate low voltage VGL.

緩衝級120包括第四電晶體T4及第五電晶體T5。第四電晶體T4具有提供斜波信號V SWEEP的第一端、接收閘極低電壓VGL的第二端、以及接收斜波參考電壓Vx的控制端。第五電晶體T5具有接收閘極高電壓VGH的第一端、耦接第四電晶體T4的第一端的第二端、以及接收第二偏壓VB2的控制端。 The buffer stage 120 includes a fourth transistor T4 and a fifth transistor T5. The fourth transistor T4 has a first terminal for providing the ramp signal V SWEEP, a second terminal for receiving the gate low voltage VGL, and a control terminal for receiving the ramp reference voltage Vx. The fifth transistor T5 has a first terminal receiving the gate voltage VGH, a second terminal coupled to the first terminal of the fourth transistor T4, and a control terminal receiving the second bias voltage VB2.

在本發明實施例中,第一電晶體T1、第二電晶體T2、第三電晶體T3、第四電晶體T4及第五電晶體T5個別為一P型電晶體。並且,第一電晶體T1可以操作於截止區,以作為一個低電流的電流源,以及第四電晶體T4及第五電晶體T5可以操作於飽和區,以作為一個導通的開關。In the embodiment of the present invention, the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, and the fifth transistor T5 are each a P-type transistor. In addition, the first transistor T1 can operate in the cut-off region as a low-current current source, and the fourth transistor T4 and the fifth transistor T5 can operate in the saturation region as an on switch.

在本發明實施例中,第一電晶體T1的長寬比可以相同於第三電晶體T3的長寬比,但小於第二電晶體T2的長寬比。第四電晶體T4及第五電晶體T5的長寬比可以相同,並且可以大於第二電晶體T2的長寬比。In the embodiment of the present invention, the aspect ratio of the first transistor T1 may be the same as the aspect ratio of the third transistor T3, but smaller than the aspect ratio of the second transistor T2. The aspect ratio of the fourth transistor T4 and the fifth transistor T5 may be the same, and may be greater than the aspect ratio of the second transistor T2.

圖2為依據本發明一實施例的斜波產生電路的驅動波形示意圖。請參照圖1及圖2,當重置信號RESET及開關信號SW自高電壓準位VH切換至低電壓準位VL時,第二電晶體T2及第三電晶體T3會導通,因此第一偏壓VB1會傳送至第一電晶體T1的控制端,並且第一電壓V1會傳送至第二電容C2。2 is a schematic diagram of driving waveforms of a ramp wave generating circuit according to an embodiment of the present invention. 1 and 2, when the reset signal RESET and the switch signal SW switch from the high voltage level VH to the low voltage level VL, the second transistor T2 and the third transistor T3 will be turned on, so the first bias The voltage VB1 is transmitted to the control terminal of the first transistor T1, and the first voltage V1 is transmitted to the second capacitor C2.

為了使第一電晶體T1操作於截止區(或稱次臨界區),第一偏壓VB1可以約為第一電壓V1減去第一電晶體T1的臨界電壓(亦即VB1≈V1-|V TH1|),此時第一電晶體T1的源汲極電壓V SG1會儲存於第一電容C1中。並且,斜波參考電壓Vx經由第一電壓V1進行充電而上升至第一預設電壓VP1,其中第一預設電壓VP1約等於第一電壓V1。 In order to make the first transistor T1 operate in the cut-off region (or called the subcritical region), the first bias voltage VB1 can be approximately the first voltage V1 minus the threshold voltage of the first transistor T1 (ie VB1≈V1-|V TH1 |), at this time, the source-drain voltage V SG1 of the first transistor T1 will be stored in the first capacitor C1. In addition, the ramp reference voltage Vx is charged through the first voltage V1 to rise to the first predetermined voltage VP1, wherein the first predetermined voltage VP1 is approximately equal to the first voltage V1.

並且,為了使第五電晶體T5操作於飽和區,第二偏壓VB2可以大於等於斜波信號V SWEEP的準位減去第一電晶體T5的臨界電壓(亦即VB2≧V SWEEP-|V TH5|),並且在第四電晶體T4及第五電晶體T5操作於飽和區時,斜波信號V SWEEP的準位等於斜波參考電壓Vx加上第四電晶體T4的源汲極電壓V SG4(亦即V SWEEP=Vx+V SG4)。 Moreover, in order to make the fifth transistor T5 operate in the saturation region, the second bias voltage VB2 may be greater than or equal to the level of the ramp signal V SWEEP minus the threshold voltage of the first transistor T5 (that is, VB2≧V SWEEP -|V TH5 |), and a fourth transistor T4 and the fifth transistor T5 operates in the saturation region, level of the ramp signal V ramp SWEEP is equal to the reference power source voltage Vx add a fourth drain voltage V crystal of T4 SG4 (that is, V SWEEP =Vx+V SG4 ).

由於第四電晶體T4及第五電晶體T5在同一電流路徑上,因此流經第四電晶體T4的電流I4等於第五電晶體T5的電流I5。此時,流經第四電晶體T4的電流I4為(1/2)u pC ox(W/L) 4(V SWEEP-Vx-|V TH4|) 2,並且流經第五電晶體T5的電流I5為(1/2)u pC ox(W/L) 5(VGH-VB2-|V TH5|) 2。在第四電晶體T4的長寬比(W/L) 4與第五電晶體T5的長寬比(W/L) 5相等且第四電晶體T4的臨界電壓V TH4與第五電晶體T5的臨界電壓V TH5相等時,斜波信號V SWEEP的準位等於斜波參考電壓Vx加上閘極高電壓VGH後減去第二偏壓VB2(亦即V SWEEP=Vx+VGH–VB2)。換言之,第二預設準位VP2會等於第一預設電壓VP1加上閘極高電壓VGH後減去第二偏壓VB2,亦即斜波信號V SWEEP的預設準位VP2受控於第二偏壓VB2。 Since the fourth transistor T4 and the fifth transistor T5 are on the same current path, the current I4 flowing through the fourth transistor T4 is equal to the current I5 of the fifth transistor T5. At this time, the current I4 flowing through the fourth transistor T4 is (1/2)u p C ox (W/L) 4 (V SWEEP -Vx-|V TH4 |) 2 and flows through the fifth transistor T5 The current I5 is (1/2)u p C ox (W/L) 5 (VGH-VB2-|V TH5 |) 2 . The aspect ratio (W/L) 4 of the fourth transistor T4 is equal to the aspect ratio (W/L) 5 of the fifth transistor T5 and the threshold voltage V TH4 of the fourth transistor T4 is equal to that of the fifth transistor T5 When the threshold voltage V TH5 is equal, the level of the ramp signal V SWEEP is equal to the ramp reference voltage Vx plus the gate high voltage VGH and then minus the second bias voltage VB2 (that is, V SWEEP =Vx+VGH−VB2). In other words, the second preset level VP2 is equal to the first preset voltage VP1 plus the gate high voltage VGH minus the second bias voltage VB2, that is, the preset level VP2 of the ramp signal V SWEEP is controlled by the first preset voltage VP1. Two bias voltage VB2.

在重置信號RESET切換至高電壓準位VH前,由於第一電壓V1的充電效應,斜波參考電壓Vx維持第一預設電壓VP1,並且斜波信號V SWEEP的準位維持於第二預設準位VP2。當重置信號RESET自低電壓準位VL切換至高電壓準位VH時,斜波參考電壓Vx反應於重置信號RESET的準位切換自第一預設準位VP1下降至第一停止準位VT1,並且斜波信號V SWEEP反應於重置信號RESET的準位切換自第二預設準位VP2下降至第二停止準位VT2。 Before the reset signal RESET is switched to the high voltage level VH, due to the charging effect of the first voltage V1, the ramp reference voltage Vx maintains the first preset voltage VP1, and the level of the ramp signal V SWEEP is maintained at the second preset level Level VP2. When the reset signal RESET switches from the low voltage level VL to the high voltage level VH, the ramp reference voltage Vx responds to the level switch of the reset signal RESET and drops from the first preset level VP1 to the first stop level VT1 , And the ramp signal V SWEEP reflects the level switch of the reset signal RESET from the second preset level VP2 to the second stop level VT2.

在本發明實施例中,第一停止準位VT1約等於第一電壓減去流經第一電晶體T1的電流I1除以第二電容C2的電容值後乘以下降時間t EM所得到的值(亦即VT1=V1-(I1/C2).t EM)。換言之,斜波信號V SWEEP的下降斜度是受控於第一電壓V1及第一偏壓VB1。 In the embodiment of the present invention, the first stop level VT1 is approximately equal to the first voltage minus the current I1 flowing through the first transistor T1 divided by the capacitance value of the second capacitor C2 and multiplied by the fall time t EM . (That is, VT1=V1-(I1/C2).t EM ). In other words, the falling slope of the ramp signal V SWEEP is controlled by the first voltage V1 and the first bias voltage VB1.

在本實施例中,開關信號SW與重置信號RESET例如為不同的信號,並且開關信號SW為低電壓準位VL的持續期間P2小於重置信號RESET為低電壓準位VL的持續期間P1,但在其他實施例中,開關信號SW與重置信號RESET可以為相同信號(亦即同一信號),藉此可降低電路佈局的走線數目,且降低電路佈局的複雜度。In this embodiment, the switch signal SW and the reset signal RESET are, for example, different signals, and the duration P2 during which the switch signal SW is at the low voltage level VL is less than the duration P1 during which the reset signal RESET is at the low voltage level VL. However, in other embodiments, the switch signal SW and the reset signal RESET may be the same signal (that is, the same signal), thereby reducing the number of wires in the circuit layout and reducing the complexity of the circuit layout.

綜上所述,本發明實施例的斜波產生電路,斜波產生電路以具有較簡單的電路結構的驅動級及緩衝器所構成,藉此不須高成本與控制複雜的數位類比轉換器,以降低整體的硬體成本及控制複雜度。並且,第一電晶體、第二電晶體、第三電晶體、第四電晶體及第五電晶體可以皆為P型電晶體,藉此可簡化製程的複雜度。In summary, in the ramp wave generating circuit of the embodiment of the present invention, the ramp wave generating circuit is composed of a driver stage and a buffer with a relatively simple circuit structure, thereby eliminating the need for high cost and complex control digital-to-analog converters. Reduce overall hardware cost and control complexity. Moreover, the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor may all be P-type transistors, thereby simplifying the complexity of the manufacturing process.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.

100:斜波產生電路 110:驅動級 120:緩衝級 C1:第一電容 C2:第二電容 I1、I4、I5:電流 P1、P2:持續期間 PX:畫素 RESET:重置信號 SW:開關信號 T1:第一電晶體 T2:第二電晶體 T3:第三電晶體 T4:第四電晶體 T5:第五電晶體 t EM:下降時間 V1:第一電壓 VB1:第一偏壓 VB2:第二偏壓 VGH:閘極高電壓 VGL:閘極低電壓 VH:高電壓準位 VL:低電壓準位 VP1:第一預設電壓 VP2:第二預設準位 V SG4:源汲極電壓 V SWEEP:斜波信號 VT1:第一停止準位 VT2:第二停止準位 Vx:斜波參考電壓 100: ramp wave generating circuit 110: driver stage 120: buffer stage C1: first capacitor C2: second capacitor I1, I4, I5: current P1, P2: duration PX: pixel RESET: reset signal SW: switch signal T1: first transistor T2: second transistor T3: third transistor T4: fourth transistor T5: fifth transistor t EM : fall time V1: first voltage VB1: first bias voltage VB2: second Bias voltage VGH: gate high voltage VGL: gate low voltage VH: high voltage level VL: low voltage level VP1: first preset voltage VP2: second preset level V SG4 : source-drain voltage V SWEEP : Ramp signal VT1: first stop level VT2: second stop level Vx: ramp reference voltage

圖1為依據本發明一實施例的斜波產生電路的系統示意圖。 圖2為依據本發明一實施例的斜波產生電路的驅動波形示意圖。 FIG. 1 is a system schematic diagram of a ramp wave generating circuit according to an embodiment of the present invention. 2 is a schematic diagram of driving waveforms of a ramp wave generating circuit according to an embodiment of the present invention.

100:斜波產生電路 100: ramp wave generating circuit

110:驅動級 110: driver stage

120:緩衝級 120: Buffer level

C1:第一電容 C1: The first capacitor

C2:第二電容 C2: second capacitor

I1、I4、I5:電流 I1, I4, I5: current

PX:畫素 PX: pixel

RESET:重置信號 RESET: reset signal

SW:開關信號 SW: Switch signal

T1:第一電晶體 T1: The first transistor

T2:第二電晶體 T2: second transistor

T3:第三電晶體 T3: third transistor

T4:第四電晶體 T4: Fourth transistor

T5:第五電晶體 T5: fifth transistor

V1:第一電壓 V1: first voltage

VB1:第一偏壓 VB1: first bias

VB2:第二偏壓 VB2: second bias voltage

VGH:閘極高電壓 VGH: Very high gate voltage

VGL:閘極低電壓 VGL: Low gate voltage

VSG4:源汲極電壓 V SG4 : source-drain voltage

VSWEEP:斜波信號 V SWEEP : ramp signal

Vx:斜波參考電壓 Vx: ramp reference voltage

Claims (8)

一種斜波產生電路,包括:一驅動級,接收一開關信號及一重置信號,以提供一斜波參考電壓;以及一緩衝級,接收該斜波參考電壓,以反應該斜波參考電壓提供一斜波信號,其中該斜波信號反應於該重置信號的準位切換自一預設準位下降至一停止準位,其中該驅動級包括:一第一電容,具有一第一端、以及耦接至該斜波參考電壓的一第二端;一第一電晶體,具有耦接該第一電容的該第二端的一第一端、接收一閘極低電壓的一第二端、以及耦接該第一電容的該第一端的一控制端;一第二電晶體,具有接收一第一電壓的一第一端、耦接該第一電容的該第二端的一第二端、以及接收該重置信號的一控制端;一第三電晶體,具有接收一第一偏壓的一第一端、耦接該第一電容的該第一端的一第二端、以及接收該開關信號的一控制端;以及一第二電容,耦接於該斜波參考電壓與該閘極低電壓之間。 A ramp wave generating circuit includes: a drive stage that receives a switch signal and a reset signal to provide a ramp wave reference voltage; and a buffer stage that receives the ramp wave reference voltage to reflect the ramp wave reference voltage supply A ramp signal, wherein the ramp signal responds to the level switch of the reset signal falling from a preset level to a stop level, wherein the driving stage includes: a first capacitor having a first terminal, And a second terminal coupled to the ramp reference voltage; a first transistor having a first terminal coupled to the second terminal of the first capacitor, a second terminal receiving a gate low voltage, And a control terminal coupled to the first terminal of the first capacitor; a second transistor having a first terminal receiving a first voltage, and a second terminal coupled to the second terminal of the first capacitor , And a control terminal receiving the reset signal; a third transistor having a first terminal receiving a first bias, a second terminal coupled to the first terminal of the first capacitor, and receiving A control terminal of the switch signal; and a second capacitor, coupled between the ramp reference voltage and the gate low voltage. 如請求項1所述的斜波產生電路,其中該第一電晶體操作於截止區。 The ramp wave generating circuit according to claim 1, wherein the first transistor is operated in the cut-off region. 如請求項1所述的斜波產生電路,其中該斜波信號的下降斜度受控於該第一電壓及該第一偏壓。 The ramp wave generating circuit according to claim 1, wherein the falling slope of the ramp signal is controlled by the first voltage and the first bias voltage. 如請求項1所述的斜波產生電路,其中該緩衝級包括:一第四電晶體,具有提供該斜波信號的一第一端、接收該閘極低電壓的一第二端、以及接收該斜波參考電壓的一控制端;以及一第五電晶體,具有接收一閘極高電壓的一第一端、耦接該第四電晶體的該第一端的一第二端、以及接收一第二偏壓的一控制端。 The ramp wave generating circuit according to claim 1, wherein the buffer stage includes: a fourth transistor having a first end for providing the ramp signal, a second end for receiving the gate low voltage, and receiving A control terminal of the ramp reference voltage; and a fifth transistor having a first terminal receiving an extremely high voltage, a second terminal coupled to the first terminal of the fourth transistor, and receiving A control terminal of a second bias. 如請求項4所述的斜波產生電路,其中該第四電晶體及該第五電晶體操作於飽和區。 The ramp wave generating circuit according to claim 4, wherein the fourth transistor and the fifth transistor operate in a saturation region. 如請求項4所述的斜波產生電路,其中該第一電晶體、該第二電晶體、該第三電晶體、該第四電晶體及該第五電晶體個別為一P型電晶體。 The ramp wave generating circuit according to claim 4, wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are each a P-type transistor. 如請求項3所述的斜波產生電路,其中該斜波信號的該預設準位受控於該第二偏壓。 The ramp wave generating circuit according to claim 3, wherein the preset level of the ramp signal is controlled by the second bias voltage. 如請求項1所述的斜波產生電路,其中該開關信號與該重置信號為相同信號。 The ramp wave generating circuit according to claim 1, wherein the switch signal and the reset signal are the same signal.
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