TWI749729B - 靜電防護結構、薄膜電晶體基板及顯示面板 - Google Patents
靜電防護結構、薄膜電晶體基板及顯示面板 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 125
- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 230000003068 static effect Effects 0.000 claims description 35
- 230000005611 electricity Effects 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 23
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
一種靜電防護結構,其用於功能電路的靜電釋放,功能電路包括複數資料線。靜電防護結構包括放電電極以及複數靜電防護單元。每一個靜電單元包括第一薄膜電晶體與第二薄膜電晶體,第一薄膜電晶體包括第一閘極、第一源極與第一汲極,第二薄膜電晶體包括第二閘極、第二源極與第二汲極。第一閘極與第一汲極電性連接且兩者電性連接至一資料線,第一源極與第二汲極電性連接,第一汲極與第二源極電性連接,第二閘極與放電電極電性連接,第二閘極與第二汲極電性連接。兩個相鄰的靜電防護單元的第二汲極電性連接,且該兩個相鄰的靜電防護單元的第二閘極與第二汲極通過同一個橋接結構電性連接。本發明還提供一種應用靜電防護結構的薄膜電晶體基板與顯示面板。
Description
本發明涉及一種靜電防護結構、薄膜電晶體基板及顯示面板。
靜電是普遍存於自然界中的現象,當兩個介電常數(Dielectric constant)不同的材料介質相互磨擦時,靜電便會伴隨產生。當帶有靜電的物體釋放靜電後回歸到中性狀態,這種靜電釋放的現象稱之為靜電放電(Electrostatic Discharge,ESD)。
在顯示面板中,靜電防護結構的基本功能是將面板內的靜電引導至圖元矩陣外,以防止靜電瞬間放電電流擊傷圖元矩陣區的薄膜電晶體元件,以免造成面板顯示不良的現象。隨著市場對面板邊框寬度要求越來越窄,因而,兼顧靜電防護作用與滿足窄邊框設計的顯示面板的靜電防護結構更能符合市場需求。
鑒於此,有必要提供一種靜電防護結構,用以釋放顯示面板上的靜電,所述靜電防護結構在具備靜電放電功能的同時,有利於減少所述靜電防護結構在顯示面板上佔用的空間。
本發明一方面提供一種靜電防護結構,用於對功能電路進行靜電釋放,所述功能電路包括複數資料線,所述靜電防護結構包括:放電電極以及與所述放電電極電性連接的複數靜電防護單元;每一個靜電防護單元包括第一薄膜電晶體與第二薄膜電晶體,所述第一薄膜電晶體包括第一閘極、第一源極與第一汲極,所述第二薄膜電晶體包括第二閘極、第二源極與第二汲極,所述第一閘極與所述第一汲極電性連接且兩者電性連接至一所述資料線,所述第一源極與所述第二汲極電性連接,所述第一汲極與所述第二源極電性連接,所述第二閘極與所述放電電極電性連接,所述第二閘極與所述第二汲極電性連接;兩個相鄰的靜電防護單元的所述第二汲極電性連接,且該兩個相鄰的靜電防護單元的所述第二閘極與所述第二汲極通過同一個橋接結構電性連接。
本發明第二方面提供一種薄膜電晶體基板,具有顯示區與圍繞所述顯示區設置的非顯示區,所述薄膜電晶體基板包括:襯板;以及,所述的靜電防護結構,所述靜電防護結構設置於所述襯板上且位於所述非顯示區。
本發明第三方面面提供一種顯示面板,其包括:所述薄膜電晶體基板;與所述薄膜電晶體基板相對設置的彩色濾光基板;以及位於所述薄膜電晶體基板與所述彩色濾光基板之間的液晶層。
本發明第四方面提供另一種顯示面板,其包括所述薄膜電晶體基板;以及發光元件陣列,所述發光元件陣列包括複數發光單元;每一個發光單元包括一個發光元件,所述薄膜電晶體基板用以驅動所述發光元件發光以顯示圖像。
相對於習知技術,在上述靜電防護結構中,兩個相鄰的所述靜電防護單元的位於不同金屬層的所述第二閘極和所述第二汲極通過同一橋接結構電性連接,如此可以節省所述靜電防護結構佔用的空間,則當所述靜電防護結構應用到所述薄膜電晶體基板上時,所述靜電防護結構在滿足靜電放電功能的同時能減少佔用所述薄膜電晶體基板的空間,使得使用所述薄膜電晶體基板的顯示面板能夠實現窄邊框設計。
100:薄膜電晶體基板
10:靜電防護結構
20、40、50:靜電防護單元
30:放電電極
201、401、501:第一薄膜電晶體
201a、401a、501a:第一閘極
201b、401b、501b:第一源極
201c、401c、501c:第一汲極
202、402、502:第二薄膜電晶體
202a、402a、502a:第二閘極
202b、402b、502b:第二源極
202c、402c、502c:第二汲極
60:資料線
70:橋接結構
101:襯板
102:第一金屬層
103:第一絕緣層
104:第二金屬層
105:第二絕緣層
106、1061、1062:半導體層
701:第一開口
702:第二開口
703:導電層
10A:顯示區
10B:非顯示區
80:圖元單元
90:圖元矩陣
801:第三薄膜電晶體
801a:閘極
801b:源極
801c:汲極
802:圖元電極
601:閘極掃描線
602:源極資料線
2011、2021:二極體
200、500:顯示面板
300:彩色濾光基板
400:液晶層
600:發光元件陣列
圖1是本發明實施例的薄膜電晶體基板的示意圖。
圖2是本發明實施例的薄膜電晶體基板的圖元單元示意圖。
圖3是本發明實施例的薄膜電晶體基板的兩個相鄰的靜電防護單元的電路圖。
圖4是圖3的兩個相鄰的靜電防護單元的在薄膜電晶體基板上的局部俯視示意圖。
圖5是圖4沿剖面線I1-I2剖開的橋接結構的剖面圖。
圖6是圖4沿剖面線I3-I4剖開的第二薄膜電晶體、第二薄膜電晶體和橋接結構的剖面示意圖。
圖7是圖1中一個靜電防護單元的等效電路圖。
圖8是本發明實施例的顯示面板的示意圖。
圖9是本發明實施例的又一顯示面板的示意圖。
附圖中示出了本發明的實施例,本發明可以藉由多種不同形式實現,而並不應解釋為僅局限於這裡所闡述的實施例。相反,提供這些實施例是
為了使本發明更為全面和完整的公開,並使所屬領域的技術人員更充分地瞭解本發明的範圍。
參照圖1,本發明實施例的薄膜電晶體基板100,具有顯示區10A(如圖1中虛線框圍繞的區域)與圍繞所述顯示區10A設置的非顯示區10B(如圖1中虛線框與最週邊的實線框共同圍繞的區域)。在所述薄膜電晶體基板100的所述非顯示區10B設置有靜電防護結構10,所述靜電防護結構10包括一放電電極30以及所述放電電極30電性連接的複數靜電防護單元20。在本實施例中,所述放電電極30圍繞所述顯示區10A形成一整圈。沿所述薄膜電晶體基板100沿X方向與Y方向上均分佈有複數資料線60,X方向與Y方向如圖1所示,X方向與Y方向相互交叉,在本實施例中,X方向與Y方向垂直。每一個靜電防護單元20電性連接一條資料線60。
在本實施例中,每個靜電防護單元20包括一個第一薄膜電晶體201和一個第二薄膜電晶體202。所述第一薄膜電晶體201包括第一閘極201a、第一源極201b與第一汲極201c。所述第二薄膜電晶體202包括第二閘極202a、第二源極202b與第二汲極202c。所述第一汲極201c與所述第一閘極201a電性連接且兩者電性連接至所述資料線60,所述第一源極201b與所述第二汲極202c電性連接,所述第一汲極201c與所述第二源極202b電性連接,所述第二閘極202a與所述放電電極30電性連接,所述第二閘極202a和所述第二汲極202c電性連接。在本實施例中,每一靜電防護單元20的第二閘極202a複用所述放電電極30的一部分。
所述放電電極30可以與接地信號連接,所述資料線60上的靜電可通過與其電性連接的靜電防護單元20引導至放電電極30,再通過放電電極30接地釋放。
在本實施例中,所有的靜電防護單元20的所述第二閘極202a複用所述放電電極30的一部分。具體地,所有的靜電防護單元20的所述第二閘極202a由同一金屬層圖案化形成,且所述所有的靜電防護單元20的所述第二閘極202a電性連接地共同構成所述放電電極30的一部分。
在本實施例中,每一個靜電防護單元20的所述第一薄膜電晶體201和所述第二薄膜電晶體202同為N型薄膜電晶體或P型薄膜電晶體。在本實施例中,通過所述第一薄膜電晶體201與所述第二薄膜電晶體202釋放所述資料線60上的正電荷或負電荷至所述放電電極30。
在本實施例中,每一資料線60的兩端皆分別連接一個所述靜電防護單元20,如此,可加強靜電防護能力。
進一步參照圖1,所在所顯示區10A內,X方向上的兩條相鄰的資料線60與Y方向上的兩條相鄰的資料線60限定的區域定義為所述薄膜電晶體基板100的一個圖元單元80。所述複數圖元單元80組成圖元矩陣90。在本實施例中,所述放電電極30圍繞所述圖元矩陣90形成一整圈。
參照圖2,在所述薄膜電晶體基板100上的每一個圖元單元80內設置有第三薄膜電晶體801及與所述第三薄膜電晶體801電性連接的圖元電極802。
在本實施例中,所述第三薄膜電晶體801包括閘極801a、源極801b與汲極801c。在本實施例中,所述X方向上的所述資料線60為與所述第三薄膜電晶體801的閘極801a電性連接的閘極掃描線601或為與所述Y方向上的所述資料線60為與所述第三薄膜電晶體801的源極801b電性連接的源極資料線602。所述圖元電極802與所述第三薄膜電晶體801的汲極801c電性連接。通過與所述閘極掃描線601及所述源極資料線602電性連接的所述靜電防護單元20將所
述圖元單元80中的靜電引導至所述圖元矩陣90外,以防止靜電瞬間放電電流擊傷所述圖元矩陣90區的第三薄膜電晶體801而影響面板的顯示效果。
參照圖3,圖3示出了所述薄膜電晶體基板100上任意兩個相鄰的靜電防護單元40和靜電防護單元50電性連接的情況。兩個相鄰的靜電防護單元40與靜電防護單元50為分別與兩個相鄰的資料線60電性連接。所述靜電防護單元20、所述靜電防護單元40與靜電防護單元50為所述薄膜電晶體基板100上相同的靜電防護單元。
如圖3所示,所述靜電防護單元40包括第一薄膜電晶體401及第二薄膜電晶體402。所述第一薄膜電晶體401包括第一閘極401a、第一源極401b與第一汲極401c,所述第二薄膜電晶體402包括第二閘極402a、第二源極402b與第二汲極402c。所述第一汲極401c與所述第一閘極401a電性連接且兩者電性連接至所述資料線60,所述第一源極401b與所述第二汲極402c電性連接,所述第一汲極401c與所述第二源極402b電性連接,所述第二閘極402a電性連接至所述放電電極30,所述第二閘極402a和所述第二汲極402c電性連接。
如圖3所示,所述靜電防護單元50包括第一薄膜電晶體501及第二薄膜電晶體502。所述第一薄膜電晶體501包括第一閘極501a、第一源極501b與第一汲極501c,所述第二薄膜電晶體502包括第二閘極502a、第二源極502b與第二汲極502c。所述第一汲極501c與所述第一閘極501a電性連接且兩者電性連接至所述資料線60,所述第一源極501b與所述第二汲極502c電性連接,所述第一汲極501c與所述第二源極502b電性連接,所述第二閘極502a與所述放電電極30電性連接,所述第二閘極502a和所述第二汲極502c電性連接。所述第二汲極402c與所述第二汲極502c電性連接。
在本實施例中,所述第二閘極402a與所述第二閘極502a為同一金屬層圖案化形成,且兩者電性連接地構成所述放電電極30的一部分。所述第二閘極402a與所述第二閘極502a複用所述放電電極30的一部分。
參照圖4、圖5和圖6,所述薄膜電晶體基板100包括一襯板101,所述靜電防護結構10位於所述襯板101上。所述薄膜電晶體基板100還包括位於所述襯板101上的圖案化的第一金屬層102、位於所述第一襯板101上且覆蓋所述第一金屬層102的第一絕緣層103、位於所述第一絕緣層103上的圖案化的半導體層106、位於所述第一絕緣層103上且覆蓋所述半導體層106的圖案化的第二金屬層104,且所述半導體層106由所述圖案化的第二金屬層104部分暴露。所述薄膜電晶體基板100還包括覆蓋所述第二金屬層104與所述半導體層106的第二絕緣層105。在本實施例中,所述半導體層106包括所述第二薄膜電晶體402的半導體層1061與所述第二薄膜電晶體502的半導體層1062。
如圖4、圖5與圖6所示,所述第二閘極402a與所述第二閘極502a電性連接且均由圖案化的第一金屬層102形成,且兩者構成所述靜電放電電極30的一部分。所述第二源極402b、所述第二汲極402c、所述第二源極502b與所述第二汲極502c均由圖案化的第二金屬層104形成。所述第二閘極402a正對所述半導體層1061,所述第二源極402b與所述第二汲極402c分別位於所述半導體層1061的兩側,且所述第二源極402b與所述第二汲極402c間隔設置地暴露出所述半導體層1061。所述第二閘極502a正對所述半導體層1062,所述第二源極502b與所述第二汲極502c分別位於所述半導體層1062的兩側,且所述第二源極502b與所述第二汲極502c間隔設置地暴露出所述半導體層1062。所述第二汲極402c與所述第二汲極502c電性連接。
在本實施例中,所述顯示區10A的第三薄膜電晶體801的閘極801a也是由所述圖案化的第一金屬層102形成,第三薄膜電晶體801的源極801b與
汲極801c由所述圖案化的第二金屬層104形成。所述半導體層106還包括所述第三薄膜電晶體801的半導體層(圖未示)。
進一步圖4、參照圖5和圖6,所述薄膜電晶體基板100還包括一導電層703。所述第一絕緣層103和所述第二絕緣層105共同開設第一開口701,所述第一開口701暴露出所述第二閘極402a與所述第二閘極502a的電性連接位置C。所述第二絕緣層105開設有第二開口702,所述第二開口702暴露出所述第二汲極402c與所述第二汲極502c的電性連接位置D。所述導電層703形成於所述第二絕緣層105上並延伸至所述第一開口701與所述第二開口702。所述第一開口701、所述第二開口702與所述導電層703構成橋接結構70。在本實施例中,所述第二薄膜電晶體402的第二閘極402a與第二汲極402c通過所述橋接結構70電性連接,所述第二薄膜電晶體502的第二閘極502a與第二汲極502c也通過橋接結構70電性連接。
習知的薄膜電晶體基板中,位於不同金屬層的薄膜電晶體的閘極與汲極需要通過橋接結構進行電性連接,當每一個薄膜電晶體使用一個橋接結構進行電性連接時必然佔用面板更多的空間。如圖4所示,所述第二薄膜電晶體402與所述第二薄膜電晶體502共同使用一個橋接結構70進行閘極和汲極的電性連接。如此,兩個相鄰的所述靜電防護單元50和所述靜電防護單元40共用所述橋接結構70使所述靜電防護結構10在具備靜電放電功能的同時能減少佔用所述薄膜電晶體基板100的空間,有利於面板實現窄邊框設計。
在本實施例中,所有靜電防護單元20的第二閘極202a均由圖案化的第一金屬層102形成,且這些第二閘極202a共同形成所述放電電極30的一部分。
在本實施例中,所述資料線60位於所述襯板101上,且可以由圖案化的第二金屬層104形成。
參照圖7,圖7為圖1中任意一個靜電防護單元20的等效電路圖。
當所述第一薄膜電晶體201與所述第二薄膜電晶體202為N型電晶體時,圖1任意一個靜電防護單元20的等效電路圖如圖7所示。所述第一薄膜電晶體201等效為二極體2011;所述第二薄膜電晶體202等效為二極體2021。具體地,電性連接的所述第一閘極201a與所述第一汲極201c等效為所述二極體2011的陽極,所述第一源極201b等效為所述二極體2011的陰極;電性連接的所述第二閘極202a與所述第二汲極202c等效為所述二極體2021的陽極,所述第二源極202b等效為所述二極體2021的陰極。
如圖7所示,所述二極體2011的陰極與所述二極體2021的陽極皆電性連接所述放電電極30;所述二極體2011的陽極與所述二極體2021的陰極皆電性連接所述資料線60。在本實施例中,所述資料線60上靜電通過所述二極體2011與所述二極體2021釋放至所述放電電極30。具體地,所述資料線60上的正電荷通過所述二極體2011釋放至所述放電電極30,所述資料線60上的負電荷通過所述二極體2021釋放至所述放電電極30。
在其他實施例中,第一薄膜電晶體201與所述第二薄膜電晶體202可同為P型電晶體。電性連接的所述第一閘極201a與所述第一汲極201c等效為所述二極體2011的陰極,所述第一源極201b等效為所述二極體2011的陽極;電性連接的所述第二閘極202a與所述第二汲極202c等效為所述二極體2021的陰極,所述第二源極202b等效為所述二極體2021的陽極。所述二極體2011的陽極與所述二極體2021的陰極皆電性連接所述放電電極30;所述二極體2011的陰極與所述二極體2021的陽極皆電性連接所述資料線60。
可以理解,上述靜電防護結構10也可用於對其它具有複數資料線60的功能電路進行靜電釋放,不限於薄膜電晶體基板100中的開關電路。所述功能電路是指具有除靜電釋放功能以外的功能的電路。
本發明實施例還提供一種顯示面板200。
參照圖8,所述顯示面板200包括所述的薄膜電晶體基板100、與所述薄膜電晶體基板100相對設置的彩色濾光基板300以及位於所述薄膜電晶體基板100與所述彩色濾光基板300之間的液晶層400。在本實施例中,所述顯示面板200可為LCD顯示面板。所述顯示面板200還包括位於所述薄膜電晶體基板100上的靜電防護結構10,用於顯示面板200的靜電防護。
參閱圖9,本發明實施例還提供另一種顯示面板500。
在其他實施例中,所述顯示面板500包括所述薄膜電晶體基板100與發光元件陣列600。所述發光元件陣列600包括複數發光單元700,每一個發光單元700包括一個發光元件800。所述薄膜電晶體基板100用以驅動所述發光元件陣列600的發光元件800發光以顯示圖像。所述顯示面板500還包括位於所述薄膜電晶體基板100上的靜電防護結構10,用於顯示面板500的靜電防護。
在本實施例中,所述發光元件陣列600為OLED(Organic Light Emitting Diode,OLED)陣列、Micro-LED(Micro light emitting diode,LED)陣列或Mini-LED(Millimeter light emitting diodes,Mini LED)陣列。
對於所屬領域技術人員而言,顯然本發明不限於上述示範性實施例的細節,而且在不背離本發明的精神或基本特徵的情況下,能夠以其他的具體形式實現本發明。最後應說明的是,以上實施例僅用以說明本發明的技術方案而非限制,儘管參照較佳實施例對本發明進行了詳細說明,所屬領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換,而不脫離本發明技術案的範圍。
40、50:靜電防護單元
30:放電電極
401、501:第一薄膜電晶體
401a、501a:第一閘極
401b、501b:第一源極
401c、501c:第一汲極
402、502:第二薄膜電晶體
402a、502a:第二閘極
402b、502b:第二源極
402c、502c:第二汲極
60:資料線
Claims (9)
- 一種薄膜電晶體基板,具有顯示區與圍繞所述顯示區設置的非顯示區,其改良在於,包括:襯板;以及靜電防護結構,所述靜電防護結構設置於所述襯板上且位於所述非顯示區,包括放電電極以及與所述放電電極電性連接的複數靜電防護單元;每一個靜電防護單元包括第一薄膜電晶體與第二薄膜電晶體,所述第一薄膜電晶體包括第一閘極、第一源極與第一汲極,所述第二薄膜電晶體包括第二閘極、第二源極與第二汲極,所述第一閘極與所述第一汲極電性連接且兩者電性連接至一所述資料線,所述第一源極與所述第二汲極電性連接,所述第一汲極與所述第二源極電性連接,所述第二閘極與所述放電電極電性連接,所述第二閘極與所述第二汲極電性連接;兩個相鄰的靜電防護單元的所述第二汲極電性連接,且該兩個相鄰的靜電防護單元的所述第二閘極與所述第二汲極通過同一個橋接結構電性連接;其中,所述薄膜電晶體基板還包括位於所述襯板上的圖案化的第一金屬層、覆蓋所述第一金屬層的第一絕緣層、位於所述第一絕緣層上的圖案化的第二金屬層以及覆蓋所述第二金屬層的第二絕緣層;該兩個相鄰的靜電防護單元的所述第二閘極電性連接且均由圖案化的所述第一金屬層形成,且該兩個相鄰的靜電防護單元的所述第二汲極電性連接且均由圖案化的所述第二金屬層形成;所述第一絕緣層與所述第二絕緣層共同開設有第一開口,所述第一開口暴露出該兩個相鄰的靜電防護單元的所述第二閘極的電性連接的位置;第二絕緣層中開設有第二開口,所述第二開口暴露出該兩個相鄰的靜電防護單元的所述第二汲極的電性連接位置;一導電層形成於所述第二絕緣層上並延伸至所述第一開口與所述第二開口;所述第一開口、所述第二開口與所述導電層形成所述橋接結 構。
- 如請求項1所述的薄膜電晶體基板,其中,每一個靜電防護單元的所述第二閘極複用所述放電電極的一部分。
- 如請求項1所述的薄膜電晶體基板,其中,所述第一薄膜電晶體與所述第二薄膜電晶體為同一類型的電晶體,通過所述第一薄膜電晶體與所述第二薄膜電晶體釋放所述資料線上的正電荷或負電荷至所述放電電極。
- 如請求項1所述的薄膜電晶體基板,其中,所述放電電極圍繞所述顯示區形成一個整圈。
- 如請求項1所述的薄膜電晶體基板,其中,所述資料線位於所述襯板上,且所述資料線的兩端皆連接一個所述靜電防護單元。
- 如請求項4所述的薄膜電晶體基板,其中在所述顯示區,所述薄膜電晶體基板的X方向上的相鄰兩條所述資料線及與Y方向上的相鄰兩條所述資料線限定的區域定義為一個圖元單元,複數所述圖元單元形成圖元矩陣,所述放電電極圍繞所述圖元矩陣形成一整圈。
- 如請求項6所述的薄膜電晶體基板,其中,每一個圖元單元內設置有第三薄膜電晶體及與所述第三薄膜電晶體電性連接的圖元電極,所述資料線為與所述第三薄膜電晶體的閘極電性連接的閘極掃描線或為與所述第三薄膜電晶體的源極電性連接的源極資料線。
- 一種顯示面板,其改良在於,包括:如請求項1至7任意一項所述的薄膜電晶體基板;與所述薄膜電晶體基板相對設置的彩色濾光基板;以及位於所述薄膜電晶體基板與所述彩色濾光基板之間的液晶層。
- 一種顯示面板,其改良在於,包括:如請求項1至7任意一項所述的薄膜電晶體基板;以及 發光元件陣列,所述發光元件陣列包括複數發光單元;每一個發光單元包括一個發光元件,所述薄膜電晶體基板用以驅動所述發光元件發光以顯示圖像。
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