CN114078834A - 静电防护结构、薄膜晶体管基板及显示面板 - Google Patents
静电防护结构、薄膜晶体管基板及显示面板 Download PDFInfo
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Abstract
一种静电防护结构,用于功能电路的静电释放,功能电路包括多条信号线。静电防护结构包括放电电极以及多个静电防护单元。每一个静电单元包括第一薄膜晶体管与第二薄膜晶体管,第一薄膜晶体管包括第一栅极、第一源极与第一漏极,第二薄膜晶体管包括第二栅极、第二源极与第二漏极。第一栅极与第一漏极电性连接且两者电性连接至一信号线,第一源极与第二漏极电性连接,第一漏极与第二源极电性连接,第二栅极与放电电极电性连接,第二栅极与第二漏极电性连接;两个相邻的静电防护单元的第二漏极电性连接,且该两个相邻的静电防护单元的第二栅极与第二漏极通过同一个桥接结构电性连接。本发明还提供一种应用静电防护结构的薄膜晶体管基本与显示面板。
Description
技术领域
本发明涉及一种静电防护结构、薄膜晶体管基板及显示面板。
背景技术
静电是普遍存于自然界中的现象,当两个介电常数(Dielectric constant)不同的材料介质相互磨擦时,静电便会伴随产生。当带有静电的物体释放静电后回归到中性状态,这种静电释放的现象称之为静电放电(Electrostatic Discharge,ESD)。
在显示面板中,静电防护结构的基本功能是将面板内的静电引导至像素矩阵外,以防止静电瞬间放电电流击伤像素矩阵区的薄膜晶体管元件,以免造成面板显示不良的现象。随着市场对面板边框宽度要求越来越窄,因而,兼顾静电防护作用与满足窄边框设计的显示面板的静电防护结构更能符合市场需求。
发明内容
鉴于此,有必要提供一种静电防护结构,用以释放显示面板上的静电,所述静电防护结构在具备静电放电功能的同时,有利于减少所述静电防护结构在显示面板上占用的空间。
本发明一方面提供一种静电防护结构,用于对功能电路进行静电释放,所述功能电路包括多条信号线,所述静电防护结构包括:
放电电极以及与所述放电电极电性连接的多个静电防护单元;
每一个静电防护单元包括第一薄膜晶体管与第二薄膜晶体管,所述第一薄膜晶体管包括第一栅极、第一源极与第一漏极,所述第二薄膜晶体管包括第二栅极、第二源极与第二漏极,所述第一栅极与所述第一漏极电性连接且两者电性连接至一所述信号线,所述第一源极与所述第二漏极电性连接,所述第一漏极与所述第二源极电性连接,所述第二栅极与所述放电电极电性连接,所述第二栅极与所述第二漏极电性连接;
两个相邻的静电防护单元的所述第二漏极电性连接,且该两个相邻的静电防护单元的所述第二栅极与所述第二漏极通过同一个桥接结构电性连接。本发明还提供一种薄膜晶体管基板,其具有显示区与围绕所述显示区设置的非显示区,在所述非显示区设置有所述静电防护结构。
本发明第二方面提供一种薄膜晶体管基板,具有显示区与围绕所述显示区设置的非显示区,所述薄膜晶体管基板包括:
衬板;以及,
所述的静电防护结构,所述静电防护结构设置于所述衬板上且位于所述非显示区。
本发明第三方面提供一种显示面板,其包括:
所述薄膜晶体管基板;与所述薄膜晶体管基板相对设置的彩色滤光基板;以及位于所述薄膜晶体管基板与所述彩色滤光基板之间的液晶层。
本发明第四方面提供另一种显示面板,其包括所述薄膜晶体管基板;以及发光元件阵列,所述发光元件阵列包括多个发光单元;每一个发光单元包括一个发光元件,所述薄膜晶体管基板用以驱动所述发光元件发光以显示图像。
相对于现有技术,在上述静电防护结构中,两个相邻的所述静电防护单元的位于不同金属层的所述第二栅极和所述第二漏极通过同一桥接结构电性连接,如此可以节省所述静电防护结构占用的空间,则当所述静电防护结构应用到所述薄膜晶体管基板上时,所述静电防护结构在满足静电放电功能的同时能减少占用所述薄膜晶体管基板的空间,使得使用所述薄膜晶体管基板的显示面板能够实现窄边框设计。
附图说明
图1为本发明实施例的薄膜晶体管基板的示意图。
图2为本发明实施例的薄膜晶体管基板的像素单元示意图。
图3为本发明实施例的薄膜晶体管基板的两个相邻的静电防护单元的电路图。
图4为图3的两个相邻的静电防护单元的在薄膜晶体管基板上的局部俯视示意图。
图5为图4沿剖面线I1-I2剖开的桥接结构的剖面图。
图6为图4沿剖面线I3-I4剖开的第二薄膜晶体管、第二薄膜晶体管和桥接结构的剖面示意图。
图7为图1中一个静电防护单元的等效电路图。
图8为本发明实施例的显示面板的示意图。
图9为本发明实施例的又一显示面板的示意图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例进行描述,显然,描述的实施例仅仅是本发明的一部分实施例,而不是全部的实施例。
参照图1,本发明实施例的薄膜晶体管基板100,具有显示区10A(如图1中虚线框围绕的区域)与围绕所述显示区10A设置的非显示区10B(如图1中虚线框与最外围的实线框共同围绕的区域)。在所述薄膜晶体管基板100的所述非显示区10B设置有静电防护结构10,所述静电防护结构10包括一放电电极30以及所述放电电极30电性连接的多个静电防护单元20。在本实施例中,所述放电电极30围绕所述显示区10A形成一整圈。沿所述薄膜晶体管基板100沿X方向与Y方向上均分布有多条信号线60,X方向与Y方向如图1所示,X方向与Y方向相互交叉,在本实施例中,X方向与Y方向垂直。每一个静电防护单元20电性连接一条信号线60。
在本实施例中,每个静电防护单元20包括一个第一薄膜晶体管201和一个第二薄膜晶体管202。所述第一薄膜晶体管201包括第一栅极201a、第一源极201b与第一漏极201c。所述第二薄膜晶体管202包括第二栅极202a、第二源极202b与第二漏极202c。所述第一漏极201c与所述第一栅极201a电性连接且两者电性连接至所述信号线60,所述第一源极201b与所述第二漏极202c电性连接,所述第一漏极201c与所述第二源极202b电性连接,所述第二栅极202a与所述放电电极30电性连接,所述第二栅极202a和所述第二漏极202c电性连接。在本实施例中,每一静电防护单元20的第二栅极202a复用所述放电电极30的一部分。
所述放电电极30可以与接地信号连接,所述信号线60上的静电可通过与其电性连接的静电防护单元20引导至放电电极30,再通过放电电极30接地释放。
在本实施例中,所有的静电防护单元20的所述第二栅极202a复用所述放电电极30的一部分。具体地,所有的静电防护单元20的所述第二栅极202a由同一金属层图案化形成,且所述所有的静电防护单元20的所述第二栅极202a电性连接地共同构成所述放电电极30的一部分。
在本实施例中,每一个静电防护单元20的所述第一薄膜晶体管201和所述第二薄膜晶体管202同为N型薄膜晶体管或P型薄膜晶体管。在本实施例中,通过所述第一薄膜晶体管201与所述第二薄膜晶体管202释放所述信号线60上的正电荷或负电荷至所述放电电极30。
在本实施例中,每一信号线60的两端皆分别连接一个所述静电防护单元20,如此,可加强静电防护能力。
进一步参照图1,所在所显示区10A内,X方向上的两条相邻的信号线60与Y方向上的两条相邻的信号线60限定的区域定义为所述薄膜晶体管基板100的一个像素单元80。所述多个像素单元80组成像素矩阵90。在本实施例中,所述放电电极30围绕所述像素矩阵90形成一整圈。
参照图2,在所述薄膜晶体管基板100上的每一个像素单元80内设置有第三薄膜晶体管801及与所述第三薄膜晶体管801电性连接的像素电极802。
在本实施例中,所述第三薄膜晶体管801包括栅极801a、源极801b与漏极801c。在本实施例中,所述X方向上的所述信号线60为与所述第三薄膜晶体管801的栅极801a电性连接的栅极扫描线601或为与所述Y方向上的所述信号线60为与所述第三薄膜晶体管801的源极801b电性连接的源极信号线602。所述像素电极802与所述第三薄膜晶体管801的漏极801c电性连接。通过与所述栅极扫描线601及所述源极信号线602电性连接的所述静电防护单元20将所述像素单元80中的静电引导至所述像素矩阵90外,以防止静电瞬间放电电流击伤所述像素矩阵90区的第三薄膜晶体管801而影响面板的显示效果。
参照图3,图3示出了所述薄膜晶体管基板100上任意两个相邻的静电防护单元40和静电防护单元50电性连接的情况。两个相邻的静电防护单元40与静电防护单元50为分别与两个相邻的信号线60电性连接。所述静电防护单元20、所述静电防护单元40与静电防护单元50为所述薄膜晶体管基板100上相同的静电防护单元。
如图3所示,所述静电防护单元40包括第一薄膜晶体管401及第二薄膜晶体管402。所述第一薄膜晶体管401包括第一栅极401a、第一源极401b与第一漏极401c,所述第二薄膜晶体管402包括第二栅极402a、第二源极402b与第二漏极402c。所述第一漏极401c与所述第一栅极401a电性连接且两者电性连接至所述信号线60,所述第一源极401b与所述第二漏极402c电性连接,所述第一漏极401c与所述第二源极402b电性连接,所述第二栅极402a电性连接至所述放电电极30,所述第二栅极402a和所述第二漏极402c电性连接。
如图3所示,所述静电防护单元50包括第一薄膜晶体管501及第二薄膜晶体管502。所述第一薄膜晶体管501包括第一栅极501a、第一源极501b与第一漏极501c,所述第二薄膜晶体管502包括第二栅极502a、第二源极502b与第二漏极502c。所述第一漏极501c与所述第一栅极501a电性连接且两者电性连接至所述信号线60,所述第一源极501b与所述第二漏极502c电性连接,所述第一漏极501c与所述第二源极502b电性连接,所述第二栅极502a与所述放电电极30电性连接,所述第二栅极502a和所述第二漏极502c电性连接。所述第二漏极402c与所述第二漏极502c电性连接。
在本实施例中,所述第二栅极402a与所述第二栅极502a为同一金属层图案化形成,且两者电性连接地构成所述放电电极30的一部分。所述第二栅极402a与所述第二栅极502a复用所述放电电极30的一部分。
参照图4、图5和图6,所述薄膜晶体管基板100包括一衬板101,所述静电防护结构10位于所述衬板101上。所述薄膜晶体管基板100还包括位于所述衬板101上的图案化的第一金属层102、位于所述第一衬板101上且覆盖所述第一金属层102的第一绝缘层103、位于所述第一绝缘层103上的图案化的半导体层106、位于所述第一绝缘层103上且覆盖所述半导体层106的图案化的第二金属层104,且所述半导体层106由所述图案化的第二金属层104部分暴露。所述薄膜晶体管基板100还包括覆盖所述第二金属层104与所述半导体层106的第二绝缘层105。在本实施例中,所述半导体层106包括所述第二薄膜晶体管402的半导体层1061与所述第二薄膜晶体管502的半导体层1062。
如图4、图5与图6所示,所述第二栅极402a与所述第二栅极502a电性连接且均由图案化的第一金属层102形成,且两者构成所述静电放电电极30的一部分。所述第二源极402b、所述第二漏极402c、所述第二源极502b与所述第二漏极502c均由图案化的第二金属层104形成。所述第二栅极402a正对所述半导体层1061,所述第二源极402b与所述第二漏极402c分别位于所述半导体层1061的两侧,且所述第二源极402b与所述第二漏极402c间隔设置地暴露出所述半导体层1061。所述第二栅极502a正对所述半导体层1062,所述第二源极502b与所述第二漏极502c分别位于所述半导体层1062的两侧,且所述第二源极502b与所述第二漏极502c间隔设置地暴露出所述半导体层1062。所述第二漏极402c与所述第二漏极502c电性连接。
在本实施例中,所述显示区10A的第三薄膜晶体管801的栅极801a也是由所述图案化的第一金属层102形成,第三薄膜晶体管801的源极801b与漏极801c由所述图案化的第二金属层104形成。所述半导体层106还包括所述第三薄膜晶体管801的半导体层(图未示)。
进一步图4、参照图5和图6,所述薄膜晶体管基板100还包括一导电层703。所述第一绝缘层103和所述第二绝缘层105共同开设第一开口701,所述第一开口701暴露出所述第二栅极402a与所述第二栅极502a的电性连接位置C。所述第二绝缘层105开设有第二开口702,所述第二开口702暴露出所述第二漏极402c与所述第二漏极502c的电性连接位置D。所述导电层703形成于所述第二绝缘层105上并延伸至所述第一开口701与所述第二开口702。所述第一开口701、所述第二开口702与所述导电层703构成桥接结构70。在本实施例中,所述第二薄膜晶体管402的第二栅极402a与第二漏极402c通过所述桥接结构70电性连接,所述第二薄膜晶体管502的第二栅极502a与第二漏极502c也通过桥接结构70电性连接。
现有的薄膜晶体管基板中,位于不同金属层的薄膜晶体管的栅极与漏极需要通过桥接结构进行电性连接,当每一个薄膜晶体管使用一个桥接结构进行电性连接时必然占用面板更多的空间。如图4所示,所述第二薄膜晶体管402与所述第二薄膜晶体管502共同使用一个桥接结构70进行栅极和漏极的电性连接。如此,两个相邻的所述静电防护单元50和所述静电防护单元40共用所述桥接结构70使所述静电防护结构10在具备静电放电功能的同时能减少占用所述薄膜晶体管基板100的空间,有利于面板实现窄边框设计。
在本实施例中,所有静电防护单元20的第二栅极202a均由图案化的第一金属层102形成,且这些第二栅极202a共同形成所述放电电极30的一部分。
在本实施例中,所述信号线60位于所述衬板101上,且可以由图案化的第二金属层104形成。
参照图7,图7为图1中任意一个静电防护单元20的等效电路图。
当所述第一薄膜晶体管201与所述第二薄膜晶体管202为N型晶体管时,图1任意一个静电防护单元20的等效电路图如图7所示。所述第一薄膜晶体管201等效为二极管2011;所述第二薄膜晶体管202等效为二极管2021。具体地,电性连接的所述第一栅极201a与所述第一漏极201c等效为所述二极管2011的阳极,所述第一源极201b等效为所述二极管2011的阴极;电性连接的所述第二栅极202a与所述第二漏极202c等效为所述二极管2021的阳极,所述第二源极202b等效为所述二极管2021的阴极。
如图7所示,所述二极管2011的阴极与所述二极管2021的阳极皆电性连接所述放电电极30;所述二极管2011的阳极与所述二极管2021的阴极皆电性连接所述信号线60。在本实施例中,所述信号线60上静电通过所述二极管2011与所述二极管2021释放至所述放电电极30。具体地,所述信号线60上的正电荷通过所述二极管2011释放至所述放电电极30,所述信号线60上的负电荷通过所述二极管2021释放至所述放电电极30。
在其他实施例中,第一薄膜晶体管201与所述第二薄膜晶体管202可同为P型晶体管。电性连接的所述第一栅极201a与所述第一漏极201c等效为所述二极管2011的阴极,所述第一源极201b等效为所述二极管2011的阳极;电性连接的所述第二栅极202a与所述第二漏极202c等效为所述二极管2021的阴极,所述第二源极202b等效为所述二极管2021的阳极。所述二极管2011的阳极与所述二极管2021的阴极皆电性连接所述放电电极30;所述二极管2011的阴极与所述二极管2021的阳极皆电性连接所述信号线60。
可以理解,上述静电防护结构10也可用于对其它具有多条信号线60的功能电路进行静电释放,不限于薄膜晶体管基板100中的开关电路。所述功能电路是指具有除静电释放功能以外的功能的电路。
本发明实施例还提供一种显示面板200。
参照图8,所述显示面板200包括所述的薄膜晶体管基板100、与所述薄膜晶体管基板100相对设置的彩色滤光基板300以及位于所述薄膜晶体管基板100与所述彩色滤光基板300之间的液晶层400。在本实施例中,所述显示面板200可为LCD显示面板。所述显示面板200还包括位于所述薄膜晶体管基板100上的静电防护结构10,用于显示面板200的静电防护。
参阅图9,本发明实施例还提供另一种显示面板500。
在其他实施例中,所述显示面板500包括所述薄膜晶体管基板100与发光元件阵列600。所述发光元件阵列600包括多个发光单元700,每一个发光单元700包括一个发光元件800。所述薄膜晶体管基板100用以驱动所述发光元件阵列600的发光元件800发光以显示图像。所述显示面板500还包括位于所述薄膜晶体管基板100上的静电防护结构10,用于显示面板500的静电防护。
在本实施例中,所述发光元件阵列600为OLED阵列、Micro-LED阵列或Mini-LED阵列。
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。最后应说明的是,以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或等同替换,而不脱离本发明技术案的范围。
Claims (12)
1.一种静电防护结构,用于对功能电路进行静电释放,所述功能电路包括多条信号线,其特征在于,包括:
放电电极以及与所述放电电极电性连接的多个静电防护单元;
每一个静电防护单元包括第一薄膜晶体管与第二薄膜晶体管,所述第一薄膜晶体管包括第一栅极、第一源极与第一漏极,所述第二薄膜晶体管包括第二栅极、第二源极与第二漏极,所述第一栅极与所述第一漏极电性连接且两者电性连接至一所述信号线,所述第一源极与所述第二漏极电性连接,所述第一漏极与所述第二源极电性连接,所述第二栅极与所述放电电极电性连接,所述第二栅极与所述第二漏极电性连接;
两个相邻的静电防护单元的所述第二漏极电性连接,且该两个相邻的静电防护单元的所述第二栅极与所述第二漏极通过同一个桥接结构电性连接。
2.如权利要求1所述的静电防护结构,其特征在于,每一个静电防护单元的所述第二栅极复用所述放电电极的一部分。
3.如权利要求1所述的静电防护结构,其特征在于,所述第一薄膜晶体管与所述第二薄膜晶体管为同一类型的晶体管,通过所述第一薄膜晶体管与所述第二薄膜晶体管释放所述信号线上的正电荷或负电荷至所述放电电极。
4.一种薄膜晶体管基板,具有显示区与围绕所述显示区设置的非显示区,其特征在于,所述薄膜晶体管基板包括:
衬板;以及
如权利要求1至3任意一项所述的静电防护结构,所述静电防护结构设置于所述衬板上且位于所述非显示区。
5.如权利要求4所述的薄膜晶体管基板,其特征在于,所述薄膜晶体管基板还包括位于所述衬板上的图案化的第一金属层、覆盖所述第一金属层的第一绝缘层、位于所述第一绝缘层上的图案化的第二金属层以及覆盖所述第二金属层的第二绝缘层;该两个相邻的静电防护单元的所述第二栅极电性连接且均由图案化的所述第一金属层形成,且该两个相邻的静电防护单元的所述第二漏极电性连接且均由图案化的所述第二金属层形成。
6.如权利要求5所述的薄膜晶体管基板,其特征在于,所述第一绝缘层与所述第二绝缘层共同开设有第一开口,所述第一开口暴露出该两个相邻的静电防护单元的所述第二栅极的电性连接的位置;第二绝缘层中开设有第二开口,所述第二开口暴露出该两个相邻的静电防护单元的所述第二漏极的电性连接位置;一导电层形成于所述第二绝缘层上并延伸至所述第一开口与所述第二开口;所述第一开口、所述第二开口与所述导电层形成所述桥接结构。
7.如权利要求4所述的薄膜晶体管基板,其特征在于,所述放电电极围绕所述显示区形成一个整圈。
8.如权利要求4所述的薄膜晶体管基板,其特征在于,所述信号线位于所述衬板上,且所述信号线的两端皆连接一个所述静电防护单元。
9.如权利要求7所述的薄膜晶体管基板,其特征在于,在所述显示区,所述薄膜晶体管基板的X方向上的相邻两条所述信号线及与Y方向上的相邻两条所述信号线限定的区域定义为一个像素单元,多个所述像素单元形成像素矩阵,所述放电电极围绕所述像素矩阵形成一整圈。
10.如权利要求9所述的薄膜晶体管基板,其特征在于,每一个像素单元内设置有第三薄膜晶体管及与所述第三薄膜晶体管电性连接的像素电极,所述信号线为与所述第三薄膜晶体管的栅极电性连接的栅极扫描线或为与所述第三薄膜晶体管的源极电性连接的源极信号线。
11.一种显示面板,其特征在于,包括:
如权利要求4至10任意一项所述的薄膜晶体管基板;
与所述薄膜晶体管基板相对设置的彩色滤光基板;以及
位于所述薄膜晶体管基板与所述彩色滤光基板之间的液晶层。
12.一种显示面板,其特征在于,包括:
如权利要求4至10任意一项所述的薄膜晶体管基板;以及
发光元件阵列,所述发光元件阵列包括多个发光单元;
每一个发光单元包括一个发光元件,所述薄膜晶体管基板用以驱动所述发光元件发光以显示图像。
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TW109128845A TWI749729B (zh) | 2020-08-17 | 2020-08-24 | 靜電防護結構、薄膜電晶體基板及顯示面板 |
US17/158,313 US11735581B2 (en) | 2020-08-17 | 2021-01-26 | Electrostatic protection structure comprising electrostatic protection units containing TFT's, TFT substrate, and display panel |
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