TWI747910B - Film formation method and TFT manufacturing method - Google Patents

Film formation method and TFT manufacturing method Download PDF

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TWI747910B
TWI747910B TW106118307A TW106118307A TWI747910B TW I747910 B TWI747910 B TW I747910B TW 106118307 A TW106118307 A TW 106118307A TW 106118307 A TW106118307 A TW 106118307A TW I747910 B TWI747910 B TW I747910B
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gas
film
processing container
silicon
film forming
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TW201807754A (en
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佐藤吉宏
渡邉幸夫
窪田真樹
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日商東京威力科創股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Abstract

在降低保護膜中H原子的含有量的同時，也能在含Cu的電極上將保護膜正常成膜。 While reducing the content of H atoms in the protective film, the protective film can also be normally formed on the Cu-containing electrode.

保護膜的成膜方法，包含：搬入步驟、供給步驟、成膜步驟。在搬入步驟中，將露出由含Cu材料所形成的構造物即Cu部的基板搬入處理容器內。在供給步驟中，對處理容器內，供給第1氣體、第2氣體、及第3氣體。在成膜步驟中，藉由供給至前述處理容器內的包含第1氣體、第2氣體、及第3氣體的混合氣體之電漿，在Cu部上形成保護膜。第1氣體為包含鹵素原子的矽系氣體。第2氣體為O2氣體、N2O氣體、N2氣體、或稀有氣體。第3氣體為H2O氣體或SiH4氣體。 The film forming method of the protective film includes a carrying-in step, a supplying step, and a film forming step. In the carrying-in step, the substrate exposing the Cu portion, which is a structure formed of a Cu-containing material, is carried into the processing container. In the supply step, the first gas, the second gas, and the third gas are supplied into the processing container. In the film forming step, a protective film is formed on the Cu portion by a plasma containing a mixed gas of the first gas, the second gas, and the third gas supplied into the processing container. The first gas is a silicon-based gas containing halogen atoms. The second gas is O 2 gas, N 2 O gas, N 2 gas, or rare gas. The third gas is H 2 O gas or SiH 4 gas.

Description

成膜方法及TFT的製造方法 Film forming method and TFT manufacturing method

本明係有關於成膜方法及TFT的製造方法。 The present invention relates to film forming methods and TFT manufacturing methods.

近年，作為實現薄型顯示器的技術，薄膜電晶體(TFT：Thin Film Transistor)的利用持續進展。從高電子遷移率、消耗電力低等觀點來看，在TFT通道係使用由銦(In)、鎵(Ga)、及鋅(Zn)所構成的氧化物半導體，即所謂的IGZO。IGZO即便在非晶狀態也有較高的電子遷移率。因此，藉由在TFT通道使用IGZO等氧化物半導體，能夠實現高速的開關動作。 In recent years, the use of thin film transistors (TFT: Thin Film Transistor) has continued to advance as a technology for realizing thin displays. From the viewpoints of high electron mobility and low power consumption, the TFT channel system uses an oxide semiconductor composed of indium (In), gallium (Ga), and zinc (Zn), so-called IGZO. IGZO has high electron mobility even in the amorphous state. Therefore, by using an oxide semiconductor such as IGZO in the TFT channel, high-speed switching can be achieved.

此外，在TFT中，為了保護通道不受外界的離子或水分的影響，例如以氮化矽(SiN)膜等保護膜將通道覆蓋。藉由電漿CVD(Chemical Vapor Deposition)來形成SiN膜時，作為原料氣體，較常使用矽烷(SiH4)及氨(NH3)。作為原料氣體使用矽烷及氨時，因為成膜中的氫(H)自由基或H離子而發生還原反應，氧原子會從氧化物半導體脫離。此外，被SiN膜吸取的H原子會因時間經過、光照射、或溫度變化等外在因素，而與構成通道的氧化物半導體中的氧(O)原子發生反應，造成O原子從氧化 物半導體脫離。因此，造成氧化物半導體的特性劣化，TFT的特性劣化。 In addition, in the TFT, in order to protect the channel from external ions or moisture, the channel is covered with a protective film such as a silicon nitride (SiN) film, for example. When the SiN film is formed by plasma CVD (Chemical Vapor Deposition), silane (SiH 4 ) and ammonia (NH 3 ) are commonly used as raw material gases. When silane and ammonia are used as the raw material gas, a reduction reaction occurs due to hydrogen (H) radicals or H ions in the film formation, and oxygen atoms are detached from the oxide semiconductor. In addition, the H atoms absorbed by the SiN film will react with oxygen (O) atoms in the oxide semiconductor constituting the channel due to external factors such as the passage of time, light irradiation, or temperature changes, causing O atoms to escape from the oxide semiconductor. Break away. Therefore, the characteristics of the oxide semiconductor are degraded, and the characteristics of the TFT are degraded.

為了防止這種情形，使用氯化矽(SiCl4)氣體或氟化矽(SiF4)氣體及不含H原子的含氮(N)氣體，在氧化物半導體上作為保護膜形成SiN膜的技術已為習知。藉此，因為保護膜中不存在H原子，能抑制氧化物半導體的特性劣化。 In order to prevent this, silicon chloride (SiCl 4 ) gas or silicon fluoride (SiF 4 ) gas and nitrogen (N) gas containing no H atoms are used to form a SiN film as a protective film on an oxide semiconductor. Already known. Thereby, since H atoms are not present in the protective film, it is possible to suppress the deterioration of the characteristics of the oxide semiconductor.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]特開2015-12131號公報 [Patent Document 1] JP 2015-12131 No.

不過，TFT內的閘極電極、源極電極、及汲極電極的材料常使用銅(Cu)。Cu會與包含於SiCl4氣體的氯(Cl)原子、或包含於SiF4氣體的氟(F)原子反應，會有在表面會產生所謂的變色、膨潤、腐蝕等所謂的Cu變質的情形發生。因此，在使用SiCl4氣體或SiF4氣體時，在閘極電極、源極電極、或汲極電極上，難以將保護膜正常成膜。 However, copper (Cu) is often used as the material of the gate electrode, the source electrode, and the drain electrode in the TFT. Cu reacts with chlorine (Cl) atoms contained in SiCl 4 gas or fluorine (F) atoms contained in SiF 4 gas, and so-called Cu deterioration such as discoloration, swelling, and corrosion may occur on the surface. . Therefore, when SiCl 4 gas or SiF 4 gas is used, it is difficult to form a protective film normally on the gate electrode, the source electrode, or the drain electrode.

若不用SiCl4氣體或SiF4氣體，而使用矽烷及氨在電極上形成SiN膜等保護膜的話，在以Cu構成的電極上能夠將保護膜正常成膜。但是，此時難以降低保護膜 中的H原子含有量，無法避免與保護膜接觸的氧化物半導體的特性劣化。 If SiCl 4 gas or SiF 4 gas is not used, but silane and ammonia are used to form a protective film such as a SiN film on the electrode, the protective film can be normally formed on the electrode made of Cu. However, in this case, it is difficult to reduce the H atom content in the protective film, and it is impossible to avoid the deterioration of the characteristics of the oxide semiconductor in contact with the protective film.

本發明的一觀點的保護膜的成膜方法，包含：將露出含Cu材料所形成的構造物即Cu部的基板搬入處理容器內的搬入步驟；對處理容器內供給第1氣體、第2氣體、及第3氣體的供給步驟；藉由供給至處理容器內的包含第1氣體、第2氣體、及第3氣體的混合氣體之電漿，在Cu部上形成保護膜的成膜步驟。第1氣體為包含鹵素原子的矽系氣體。第2氣體為O2氣體、N2O氣體、N2氣體、或稀有氣體。第3氣體為H2O氣體或SiH4氣體。 A method of forming a protective film according to an aspect of the present invention includes: a step of loading a substrate with a Cu portion that is a structure formed of a Cu-containing material into a processing container; and supplying a first gas and a second gas into the processing container , And a third gas supply step; a film formation step of forming a protective film on the Cu portion by supplying a plasma containing a mixed gas of the first gas, the second gas, and the third gas into the processing container. The first gas is a silicon-based gas containing halogen atoms. The second gas is O 2 gas, N 2 O gas, N 2 gas, or rare gas. The third gas is H 2 O gas or SiH 4 gas.

根據本發明的各種觀點及實施形態，在降低保護膜中H原子的含有量的同時，也能在以Cu構成的電極上將保護膜正常成膜。 According to various viewpoints and embodiments of the present invention, while reducing the content of H atoms in the protective film, the protective film can also be normally formed on the electrode made of Cu.

S‧‧‧基板 S‧‧‧Substrate

10‧‧‧成膜裝置 10‧‧‧Film forming device

11‧‧‧處理容器 11‧‧‧Disposal container

12‧‧‧載置台 12‧‧‧Mounting table

13‧‧‧天線 13‧‧‧antenna

14‧‧‧窗構件 14‧‧‧Window components

15‧‧‧氣體導入口 15‧‧‧Gas inlet

16‧‧‧閘閥 16‧‧‧Gate valve

17‧‧‧排氣裝置 17‧‧‧Exhaust device

18‧‧‧排氣口 18‧‧‧Exhaust port

20a~20e‧‧‧氣體供給源 20a~20e‧‧‧Gas supply source

21a~21e‧‧‧流量控制器 21a~21e‧‧‧Flow Controller

22a~22e‧‧‧閥門 22a~22e‧‧‧Valve

23‧‧‧氣體供給管 23‧‧‧Gas supply pipe

25‧‧‧整合器 25‧‧‧Integrator

26‧‧‧高頻電源 26‧‧‧High frequency power supply

27‧‧‧控制器 27‧‧‧Controller

30‧‧‧TFT 30‧‧‧TFT

31‧‧‧下塗層 31‧‧‧Undercoating

32‧‧‧閘極電極 32‧‧‧Gate electrode

33‧‧‧閘極絕緣層 33‧‧‧Gate insulation layer

34‧‧‧通道 34‧‧‧Channel

35‧‧‧源極電極 35‧‧‧Source electrode

36‧‧‧汲極電極 36‧‧‧Drain electrode

37‧‧‧緩衝層 37‧‧‧Buffer layer

38‧‧‧鈍化層 38‧‧‧Passivation layer

40‧‧‧TFT 40‧‧‧TFT

41‧‧‧下塗層 41‧‧‧Undercoat

42‧‧‧通道 42‧‧‧Channel

43‧‧‧源極電極 43‧‧‧Source electrode

44‧‧‧汲極電極 44‧‧‧Drain electrode

45‧‧‧緩衝層 45‧‧‧Buffer layer

46‧‧‧閘極絕緣層 46‧‧‧Gate insulation layer

47‧‧‧閘極電極 47‧‧‧Gate electrode

48‧‧‧鈍化層 48‧‧‧Passivation layer

49‧‧‧緩衝層 49‧‧‧Buffer layer

[圖1]圖1為表示成膜裝置的構成之一例的概略剖面圖。 [Fig. 1] Fig. 1 is a schematic cross-sectional view showing an example of the configuration of a film forming apparatus.

[圖2]圖2為表示TFT構造之一例的剖面圖。 [Fig. 2] Fig. 2 is a cross-sectional view showing an example of a TFT structure.

[圖3]圖3為表示緩衝層及鈍化層的成膜順序的一例的流程圖。 [Fig. 3] Fig. 3 is a flowchart showing an example of a film formation sequence of a buffer layer and a passivation layer.

[圖4]圖4為用以說明緩衝層及鈍化層的成膜過程的一例的剖面圖。 [Fig. 4] Fig. 4 is a cross-sectional view for explaining an example of a process of forming a buffer layer and a passivation layer.

[圖5]圖5為表示保護膜的原子組成百分率的測定結果的圖。 [Fig. 5] Fig. 5 is a graph showing the measurement result of the atomic composition percentage of the protective film.

[圖6]圖6為表示每種使用的混合氣體的保護膜的成膜狀態之一例的圖。 [Fig. 6] Fig. 6 is a diagram showing an example of a film formation state of a protective film for each mixed gas used.

[圖7]圖7為表示TFT構造之其他例的剖面圖。 [Fig. 7] Fig. 7 is a cross-sectional view showing another example of the TFT structure.

[圖8]圖8為表示頂閘極型的TFT構造之一例的剖面圖。 [Fig. 8] Fig. 8 is a cross-sectional view showing an example of a top gate type TFT structure.

所揭示的成膜方法，在一個實施形態中，包含：將露出含Cu材料所形成的構造物即Cu部的基板搬入處理容器內的搬入步驟；對處理容器內供給第1氣體、第2氣體、及第3氣體的第1供給步驟；藉由供給至處理容器內的包含第1氣體、第2氣體、及第3氣體的混合氣體之電漿，在Cu部上形成保護膜的第1成膜步驟。第1氣體為包含鹵素原子的矽系氣體。第2氣體為O2氣體、N2O氣體、N2氣體、或稀有氣體。第3氣體為H2O氣體或SiH4氣體。 In one embodiment, the disclosed film forming method includes: a loading step of loading a substrate with a Cu portion, which is a structure formed of a Cu-containing material, into a processing container; supplying a first gas and a second gas into the processing container , And the first supply step of the third gas; the first component of the protective film is formed on the Cu portion by the plasma containing the mixed gas of the first gas, the second gas, and the third gas supplied into the processing container Film step. The first gas is a silicon-based gas containing halogen atoms. The second gas is O 2 gas, N 2 O gas, N 2 gas, or rare gas. The third gas is H 2 O gas or SiH 4 gas.

此外，在揭示的成膜方法的一個實施形態中，第1氣體可以是SiF4氣體、第2氣體可以是O2氣 體、第3氣體可以是H2O氣體。 In addition, in an embodiment of the disclosed film forming method, the first gas may be SiF 4 gas, the second gas may be O 2 gas, and the third gas may be H 2 O gas.

此外，在揭示的成膜方法的一個實施形態中，保護膜的厚度為10nm以上50nm以下的範圍內。 In addition, in one embodiment of the disclosed film forming method, the thickness of the protective film is within a range of 10 nm or more and 50 nm or less.

此外，在揭示的成膜方法的一個實施形態中，在基板上可以露出氧化物半導體，在第1成膜步驟中，在Cu部及氧化物半導體上形成保護膜也可以。 In addition, in one embodiment of the disclosed film forming method, the oxide semiconductor may be exposed on the substrate, and in the first film forming step, a protective film may be formed on the Cu portion and the oxide semiconductor.

此外，在揭示的成膜方法的一個實施形態中，氧化物半導體構成TFT的通道也可以。 In addition, in one embodiment of the disclosed film forming method, the oxide semiconductor may constitute the channel of the TFT.

此外，在揭示的成膜方法的一個實施形態中，在基板上露出的Cu部為TFT源極電極、汲極電極、及閘極電極中的至少一者也可以。 In addition, in one embodiment of the disclosed film forming method, the Cu portion exposed on the substrate may be at least one of a TFT source electrode, a drain electrode, and a gate electrode.

此外，在揭示的成膜方法的一個實施形態中，更包含：將包含氯化矽氣體或氟化矽氣體或者其等的混合氣體、以及不包含氫原子的含氧氣體或含氮氣體的供給至處理容器內的第2供給步驟；藉由供給至處理容器內的包含氯化矽氣體或氟化矽氣體或者其等的混合氣體、及含氧氣體或含氮氣體的混合氣體之電漿，在保護膜上，形成氧化矽膜或氮化矽膜的第2成膜步驟。 In addition, in one embodiment of the disclosed film forming method, it further includes: supplying a mixed gas containing silicon chloride gas, silicon fluoride gas, or the like, and oxygen-containing gas or nitrogen-containing gas that does not contain hydrogen atoms The second supply step to the processing container; by supplying the plasma containing silicon chloride gas, silicon fluoride gas, or a mixed gas thereof, and a mixed gas of oxygen-containing gas or nitrogen-containing gas into the processing container, On the protective film, a second film forming step of forming a silicon oxide film or a silicon nitride film.

此外，所揭示的TFT的製造方法，在一個實施形態中，包含：將配置有含Cu材料所形成的源極電極及汲極電極，且在源極電極與汲極電極之間配置有氧化物半導體，並露出源極電極、汲極電極、及氧化物半導體的基板，搬入處理容器內的搬入步驟；對處理容器內供給第1氣體、第2氣體、及第3氣體的供給步驟；藉由供給至 處理容器內的包含第1氣體、第2氣體、及第3氣體的混合氣體之電漿，在源極電極、汲極電極、及氧化物半導體上形成保護膜的成膜步驟。第1氣體為包含鹵素原子的矽系氣體。第2氣體為O2氣體、N2O氣體、N2氣體、或稀有氣體。第3氣體為H2O氣體或SiH4氣體。 In addition, the disclosed method of manufacturing a TFT, in one embodiment, includes: disposing a source electrode and a drain electrode formed of a Cu-containing material, and disposing an oxide between the source electrode and the drain electrode The semiconductor, with the source electrode, drain electrode, and oxide semiconductor substrate exposed, the loading step into the processing container; the supply step of supplying the first gas, the second gas, and the third gas into the processing container; by A film forming step of forming a protective film on the source electrode, the drain electrode, and the oxide semiconductor with a plasma containing a mixed gas of the first gas, the second gas, and the third gas supplied into the processing container. The first gas is a silicon-based gas containing halogen atoms. The second gas is O 2 gas, N 2 O gas, N 2 gas, or rare gas. The third gas is H 2 O gas or SiH 4 gas.

以下，參照圖式詳細說明有關所揭示的成膜方法及TFT的製造方法的實施形態。此外，本實施形態並非用來限定所揭示的成膜方法及TFT的製造方法。 Hereinafter, embodiments of the disclosed film forming method and TFT manufacturing method will be described in detail with reference to the drawings. In addition, this embodiment is not intended to limit the disclosed film forming method and TFT manufacturing method.

[成膜裝置10的構成] [Configuration of Film Forming Apparatus 10]

首先，說明有關本發明的一實施形態的成膜裝置10。圖1為表示成膜裝置10的構成之一例的概略剖面圖。本實施形態中的成膜裝置10為感應耦合型的電漿化學氣相沉積(ICP-CVD)裝置。成膜裝置10具有略長方體形狀的處理容器11。在處理容器11內，配置有將基板S配置於上面的載置台12。在載置台12內，設有圖未示的溫度控制機構，藉由該溫度控制機構，將配置於載置台12上的基板S溫度控制成預定溫度。 First, the film forming apparatus 10 according to an embodiment of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing an example of the structure of a film forming apparatus 10. The film forming apparatus 10 in this embodiment is an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatus. The film forming apparatus 10 has a processing container 11 having a substantially rectangular parallelepiped shape. In the processing container 11, a mounting table 12 on which the substrate S is arranged is arranged. A temperature control mechanism (not shown) is provided in the mounting table 12, and the temperature of the substrate S arranged on the mounting table 12 is controlled to a predetermined temperature by the temperature control mechanism.

基板S例如為用於FPD(Flat Panel Display)或片狀顯示器等的玻璃基板或塑膠基板。在處理容器11的上部，設有構成處理容器11的天花板的窗構件14，窗構件14之上，配置有與處理容器11內部的載置台12對向的天線13。窗構件14例如以介電體等構成，將處理容器11內部與外部分隔。此外，窗構件14由複數分割 片來構成也可以。 The substrate S is, for example, a glass substrate or a plastic substrate used for FPD (Flat Panel Display) or a sheet display. On the upper part of the processing container 11, a window member 14 constituting the ceiling of the processing container 11 is provided, and on the window member 14, an antenna 13 facing the mounting table 12 inside the processing container 11 is arranged. The window member 14 is composed of, for example, a dielectric or the like, and partitions the inside of the processing container 11 from the outside. In addition, the window member 14 is divided by plural It can also be composed of pieces.

在處理容器11的側壁形成有用以將基板S搬入及搬出的開口，該開口可藉由閘閥16關閉。在處理容器11的底部，設有排氣口18，在排氣口18連接有排氣裝置17。排氣裝置17通過排氣口18將處理容器11內抽真空，將處理容器11的內部減壓至預定的壓力。 An opening for carrying the substrate S in and out is formed on the side wall of the processing container 11, and the opening can be closed by a gate valve 16. An exhaust port 18 is provided at the bottom of the processing container 11, and an exhaust device 17 is connected to the exhaust port 18. The exhaust device 17 evacuates the inside of the processing container 11 through the exhaust port 18 and depressurizes the inside of the processing container 11 to a predetermined pressure.

窗構件14藉由圖未示的絕緣性構件被支持於處理容器11的側壁，窗構件14與處理容器11並不直接接觸，電無法通導。此外，窗構件14在與載置台12所載置的基板S略平行的面，至少具有可覆蓋基板S全面的大小。 The window member 14 is supported on the side wall of the processing container 11 by an insulating member not shown, and the window member 14 and the processing container 11 are not in direct contact, and electricity cannot be conducted. In addition, the window member 14 has a size that can cover at least the entire surface of the substrate S on a surface that is slightly parallel to the substrate S placed on the mounting table 12.

在處理容器11的側壁設有氣體導入口15，在氣體導入口15通過氣體供給管23連接有閥門22a~22e。閥門22a通過流量控制器21a連接至氣體供給源20a。閥門22b通過流量控制器21b連接至氣體供給源20b。閥門22c通過流量控制器21c連接至氣體供給源20c。閥門22d通過流量控制器21d連接至氣體供給源20d。閥門22e通過流量控制器21e連接至氣體供給源20e。 A gas inlet 15 is provided on the side wall of the processing container 11, and valves 22 a to 22 e are connected to the gas inlet 15 via a gas supply pipe 23. The valve 22a is connected to a gas supply source 20a through a flow controller 21a. The valve 22b is connected to the gas supply source 20b through the flow controller 21b. The valve 22c is connected to the gas supply source 20c through the flow controller 21c. The valve 22d is connected to the gas supply source 20d through the flow controller 21d. The valve 22e is connected to a gas supply source 20e through a flow controller 21e.

氣體供給源20a為包含鹵素原子的矽系氣體的供給源。在本實施形態中，氣體供給源20a供給SiF4氣體。氣體供給源20b為O2氣體的供給源。氣體供給源20c為H2O氣體的供給源。氣體供給源20d為N2氣體的供給源。氣體供給源20e為SiCl4氣體的供給源。在本實施形態中，氣體供給源20e供給SiCl4氣體。藉由氣體供給源 20a供給至處理容器11內的氣體為第1氣體的一例。藉由氣體供給源20b供給至處理容器11內的氣體為第2氣體的一例。藉由氣體供給源20c供給至處理容器11內的氣體為第3氣體的一例。 The gas supply source 20a is a supply source of silicon-based gas containing halogen atoms. In this embodiment, the gas supply source 20a supplies SiF 4 gas. The gas supply source 20b is a supply source of O 2 gas. The gas supply source 20c is a supply source of H 2 O gas. The gas supply source 20d is a supply source of N 2 gas. The gas supply source 20e is a supply source of SiCl 4 gas. In this embodiment, the gas supply source 20e supplies SiCl 4 gas. The gas supplied into the processing container 11 by the gas supply source 20a is an example of the first gas. The gas supplied into the processing container 11 by the gas supply source 20b is an example of the second gas. The gas supplied into the processing container 11 by the gas supply source 20c is an example of the third gas.

從氣體供給源20a供給的SiF4氣體，藉由流量控制器21a來調整流量，通過閥門22a及氣體供給管23，從氣體導入口15供給至處理容器11內。此外，從氣體供給源20b供給的O2氣體，藉由流量控制器21b來調整流量，通過閥門22b及氣體供給管23，從氣體導入口15供給至處理容器11內。此外，從氣體供給源20c供給的H2O氣體，藉由流量控制器21c來調整流量，通過閥門22c及氣體供給管23，從氣體導入口15供給至處理容器11內。此外，從氣體供給源20d供給的N2氣體，藉由流量控制器21d來調整流量，通過閥門22d及氣體供給管23，從氣體導入口15供給至處理容器11內。此外，從氣體供給源20e供給的SiCl4氣體，藉由流量控制器21e來調整流量，通過閥門22e及氣體供給管23，從氣體導入口15供給至處理容器11內。 The SiF 4 gas supplied from the gas supply source 20 a is adjusted in flow rate by the flow controller 21 a, and is supplied into the processing container 11 from the gas inlet 15 through the valve 22 a and the gas supply pipe 23. In addition, the O 2 gas supplied from the gas supply source 20 b is adjusted in flow rate by the flow controller 21 b, and is supplied into the processing container 11 from the gas inlet 15 through the valve 22 b and the gas supply pipe 23. In addition, the H 2 O gas supplied from the gas supply source 20 c has a flow rate adjusted by the flow controller 21 c, and is supplied into the processing container 11 from the gas inlet 15 through the valve 22 c and the gas supply pipe 23. In addition, the N 2 gas supplied from the gas supply source 20 d is adjusted in flow rate by the flow controller 21 d, and is supplied into the processing container 11 from the gas inlet 15 through the valve 22 d and the gas supply pipe 23. In addition, the SiCl 4 gas supplied from the gas supply source 20e is adjusted in flow rate by the flow controller 21e, and is supplied into the processing container 11 from the gas inlet 15 through the valve 22e and the gas supply pipe 23.

天線13係由沿著窗構件14的上面配置的環狀或螺旋狀的導線形成，通過整合器25連接至高頻電源26。高頻電源26將預定頻率的高頻電力供給至天線13，藉由在天線13內流動的高頻電流，通過窗構件14在處理容器11內部產生磁場。藉由在處理容器11內產生的磁場，在處理容器11內產生感應電場，藉由該感應電場來 加速處理容器11內的電子。接著，被感應電場所加速的電子，與被導入處理容器11內的氣體分子或原子衝突，在處理容器11內產生感應耦合電漿。 The antenna 13 is formed of a loop or spiral wire arranged along the upper surface of the window member 14, and is connected to a high-frequency power source 26 through an integrator 25. The high-frequency power supply 26 supplies high-frequency power of a predetermined frequency to the antenna 13, and the high-frequency current flowing in the antenna 13 generates a magnetic field in the processing container 11 through the window member 14. By the magnetic field generated in the processing container 11, an induced electric field is generated in the processing container 11. The electrons in the processing container 11 are accelerated. Next, the electrons accelerated by the induced electric field collide with the gas molecules or atoms introduced into the processing container 11 to generate inductively coupled plasma in the processing container 11.

在本實施形態的成膜裝置10中，在形成後述緩衝層時，向處理容器11內供給SiF4氣體、O2氣體、及H2O氣體，而從供給的氣體的混合氣體藉由感應耦合電漿生成陽離子或自由基。接著，藉由生成的陽離子或自由基，藉由在基板S上進行的化學反應，而在載置台12所載置的基板S形成緩衝層。在本實施形態中，緩衝層為氧化矽(SiO)膜。緩衝層為保護膜的一例。 In the film forming apparatus 10 of this embodiment, when the buffer layer described later is formed, SiF 4 gas, O 2 gas, and H 2 O gas are supplied into the processing container 11, and the supplied gas mixture is inductively coupled Plasma generates cations or free radicals. Next, by the generated cations or radicals, a buffer layer is formed on the substrate S placed on the placing table 12 through a chemical reaction that proceeds on the substrate S. In this embodiment, the buffer layer is a silicon oxide (SiO) film. The buffer layer is an example of a protective film.

此外，在本實施形態的成膜裝置10中，在形成後述鈍化層時，向處理容器11內供給SiF4氣體、SiCl4氣體、及N2氣體，而從供給的氣體的混合氣體藉由感應耦合電漿生成陽離子或自由基。接著，藉由生成的陽離子或自由基，藉由基板S上進行的化學反應，而在載置台12所載置的基板S形成鈍化層。在本實施形態中，鈍化層為SiN膜。 In addition, in the film forming apparatus 10 of this embodiment, when the passivation layer described later is formed, SiF 4 gas, SiCl 4 gas, and N 2 gas are supplied into the processing chamber 11, and the mixture of the supplied gases is induced by induction Coupling plasma generates cations or free radicals. Next, a passivation layer is formed on the substrate S placed on the mounting table 12 by a chemical reaction that proceeds on the substrate S due to the generated cations or radicals. In this embodiment, the passivation layer is a SiN film.

此外，在鈍化層的成膜中，雖非直接構成SiN膜的材料氣體，但調整直接構成SiN膜的材料氣體SiF4氣體、SiCl4氣體、及N2氣體至適度的濃度，再來，為了使得用以生成感應耦合電漿的放電能夠容易進行等，添加在成膜處理中用以作為補助角色的Ar氣體也可以。 In addition, in the formation of the passivation layer, although the material gas that directly constitutes the SiN film is not directly constituted, the material gases SiF 4 gas, SiCl 4 gas, and N 2 gas that directly constitute the SiN film are adjusted to appropriate concentrations. To make the discharge for generating the inductively coupled plasma easy to perform, etc., Ar gas used as a supplementary role in the film formation process may also be added.

此外，在本實施形態中，雖藉由SiF4氣體、SiCl4氣體、及N2氣體的混合氣體的電漿來形成鈍化層， 但用來形成鈍化層的處理氣體並沒有限制。例如，可以使用SiF4氣體或SiCl4氣體的任一者與N2氣體的混合氣體，用O2氣體來取代N2氣體也可以。用O2氣體來取代N2氣體時，作為鈍化層形成SiO膜。 In addition, in this embodiment, although the passivation layer is formed by a plasma of a mixed gas of SiF 4 gas, SiCl 4 gas, and N 2 gas, the processing gas used to form the passivation layer is not limited. For example, SiF 4 gas or gas mixture according to any one of SiCl 4 gas and N 2 gas, O 2 gas with N 2 gas may be substituted. When O 2 gas is used instead of N 2 gas, an SiO film is formed as a passivation layer.

成膜裝置10具備控制成膜裝置10各部動作的控制器27。控制器27分別控制：排氣裝置17、流量控制器21a~21e、閥門22a~22e、及高頻電源26。控制器27，例如，藉由ASIC(Application Specific Integrated Circuit)或CPU(Central Processing Unit)等具有各種積體電路或電子電路等的電腦來實現。 The film forming apparatus 10 includes a controller 27 that controls the operation of each part of the film forming apparatus 10. The controller 27 respectively controls: the exhaust device 17, the flow controllers 21a-21e, the valves 22a-22e, and the high-frequency power supply 26. The controller 27 is realized by, for example, a computer having various integrated circuits or electronic circuits, such as ASIC (Application Specific Integrated Circuit) or CPU (Central Processing Unit).

[TFT30的構成] [Configuration of TFT30]

圖2為表示TFT30的構成之一例的剖面圖。本實施例中的TFT30為底閘極型。 FIG. 2 is a cross-sectional view showing an example of the structure of the TFT 30. The TFT 30 in this embodiment is of a bottom gate type.

TFT30，例如，如圖2所示，具備：在基板S上形成的下塗層31、在下塗層31之上部分地形成的閘極電極32、覆蓋下塗層31及閘極電極32形成的閘極絕緣層33。在本實施形態中，作為下塗層31及閘極絕緣層33，例如使用SiO膜或SiN膜。 The TFT 30, for example, as shown in FIG. 2, is provided with an undercoat layer 31 formed on the substrate S, a gate electrode 32 partially formed on the undercoat layer 31, and a structure formed by covering the undercoat layer 31 and the gate electrode 32. Gate insulation layer 33. In this embodiment, as the undercoat layer 31 and the gate insulating layer 33, for example, a SiO film or a SiN film is used.

此外，TFT30，例如，如圖2所示，具備：在閘極絕緣層33之上且配置於閘極電極32的正上方而形成的通道34、在閘極絕緣層33之上且分別形成於通道34兩側的源極電極35及汲極電極36。在本實施形態中，通道34為氧化物半導體。在實施形態中，通道34例如係使 用由銦(In)、鎵(Ga)、及鋅(Zn)所構成的氧化物半導體，即所謂的IGZO。此外，通道34的材料只要是氧化物半導體的話，並不限於IGZO。在本實施形態中，閘極電極32、源極電極35、及汲極電極36藉由含Cu材料形成。閘極電極32、源極電極35、及汲極電極36為藉由含Cu材料形成的構造造即Cu部的一例。 In addition, the TFT 30, for example, as shown in FIG. 2, is provided with a channel 34 formed on the gate insulating layer 33 and arranged directly above the gate electrode 32, and a channel 34 formed on the gate insulating layer 33 and respectively formed on the gate insulating layer 33. The source electrode 35 and the drain electrode 36 on both sides of the channel 34. In this embodiment, the channel 34 is an oxide semiconductor. In the embodiment, the channel 34 is, for example, An oxide semiconductor composed of indium (In), gallium (Ga), and zinc (Zn), so-called IGZO, is used. In addition, the material of the channel 34 is not limited to IGZO as long as it is an oxide semiconductor. In this embodiment, the gate electrode 32, the source electrode 35, and the drain electrode 36 are formed of a material containing Cu. The gate electrode 32, the source electrode 35, and the drain electrode 36 are an example of a Cu portion that is a structure formed of a Cu-containing material.

此外，TFT30，例如，如圖2所示，具備：在閘極絕緣層33之上覆蓋通道34、源極電極35、及汲極電極36而形成的緩衝層37、在緩衝層37之上形成的鈍化層38。有關於緩衝層37的成膜方法將於之後詳述。 In addition, the TFT 30, for example, as shown in FIG. 2, includes a buffer layer 37 formed on the gate insulating layer 33 to cover the channel 34, the source electrode 35, and the drain electrode 36, and the buffer layer 37 is formed on the buffer layer 37. The passivation layer 38. The film forming method of the buffer layer 37 will be described in detail later.

在本實施形態中，鈍化層38，例如為利用SiF4氣體等氟化矽氣體、N2氣體等不含H原子的含氮氣體來成膜的SiN膜。鈍化層38因為利用氟化矽氣體及不含H原子的含氮氣體來成膜，因此可以減少成膜後SiN膜中的H原子的含有量。因此，可以抑制因H原子所造成的通道34的特性劣化。 In this embodiment, the passivation layer 38 is, for example, a SiN film formed using a silicon fluoride gas such as SiF 4 gas, or a nitrogen-containing gas that does not contain H atoms , such as N 2 gas. Since the passivation layer 38 is formed using silicon fluoride gas and a nitrogen-containing gas containing no H atoms, the content of H atoms in the SiN film after film formation can be reduced. Therefore, it is possible to suppress the deterioration of the characteristics of the channel 34 due to H atoms.

在這裡，不隔著緩衝層37，使用SiF4氣體及N2氣體的混合氣體的電漿，以覆蓋通道34、源極電極35、及汲極電極36的方式形成鈍化層38，在成膜的過程，包含於SiF4氣中的F原子，會與源極電極35及汲極電極36內的Cu原子反應。藉此，在與鈍化層38接觸的源極電極35及汲極電極36的表面，會發生變色、腐蝕、膨潤。因此，源極電極35及汲極電極36與鈍化層38的密著性降低、源極電極35及汲極電極36的電阻變化、 TFT30的特性劣化等情形會發生。 Here, without intervening the buffer layer 37, a plasma of a mixed gas of SiF 4 gas and N 2 gas is used to form a passivation layer 38 so as to cover the channel 34, the source electrode 35, and the drain electrode 36, and the film is formed During the process, the F atoms contained in the SiF 4 gas will react with the Cu atoms in the source electrode 35 and the drain electrode 36. Thereby, discoloration, corrosion, and swelling may occur on the surfaces of the source electrode 35 and the drain electrode 36 that are in contact with the passivation layer 38. Therefore, the adhesion between the source electrode 35 and the drain electrode 36 and the passivation layer 38 decreases, the resistance of the source electrode 35 and the drain electrode 36 changes, and the characteristics of the TFT 30 deteriorate.

為了防止該情形，本實施形態的TFT30中，例如，如圖2所示，在通道34、源極電極35、及汲極電極36與鈍化層38之間形成緩衝層37。在本實施形態中，緩衝層37係利用SiF4氣體、O2氣體、及H2O氣體的混合氣體的電漿來成膜。 To prevent this, in the TFT 30 of this embodiment, as shown in FIG. 2, for example, a buffer layer 37 is formed between the channel 34, the source electrode 35, the drain electrode 36, and the passivation layer 38. In this embodiment, the buffer layer 37 is formed using a plasma of a mixed gas of SiF 4 gas, O 2 gas, and H 2 O gas.

在緩衝層37的成膜中，在SiF4氣體及O2氣體中添加H2O氣體。藉此，在成膜處理的過程中引發下記反應式的反應，餘下的F原子成為氟化氫(HF)氣體，而由排氣裝置17排氣掉。 In the film formation of the buffer layer 37, H 2 O gas is added to SiF 4 gas and O 2 gas. Thereby, the reaction of the following reaction formula is initiated during the film forming process, and the remaining F atoms become hydrogen fluoride (HF) gas, which is exhausted by the exhaust device 17.

SiF4+2H2O → SiO2+4HF SiF 4 +2H 2 O → SiO 2 +4HF

此外，取代H2O氣體，使用SiH4氣體也能得到同樣的效果。 In addition, the same effect can be obtained by using SiH 4 gas instead of H 2 O gas.

SiF4+SiH4+2O2 → 2SiO2+4HF SiF 4 +SiH 4 +2O 2 → 2SiO 2 +4HF

藉此，在緩衝層37的成膜過程中，與源極電極35及汲極電極36的表面的Cu原子反應的F原子減少。藉此，源極電極35及汲極電極36的表面的Cu原子與電漿中的F原子之間的反應被抑制，抑制了源極電極35及汲極電極36的表面的變質。 Thereby, in the film formation process of the buffer layer 37, the F atoms which react with the Cu atoms on the surface of the source electrode 35 and the drain electrode 36 are reduced. Thereby, the reaction between the Cu atoms on the surfaces of the source electrode 35 and the drain electrode 36 and the F atoms in the plasma is suppressed, and the surface deterioration of the source electrode 35 and the drain electrode 36 is suppressed.

此外，在源極電極35及汲極電極36上成膜的緩衝層37內，一部分的F原子雖與構成晶格的原子結合，但藉由在SiF4氣體及O2氣體添加H2O，能降低過剩地含有在緩衝層37內的不與構成晶格的原子結合的F原子。藉此，在成膜後能夠減少移動至緩衝層37內，到達 源極電極35及汲極電極36的表面的F原子。因此，能夠抑制源極電極35及汲極電極36的表面的變質。 In addition, in the buffer layer 37 formed on the source electrode 35 and the drain electrode 36, some of the F atoms are bonded to the atoms constituting the lattice, but by adding H 2 O to the SiF 4 gas and the O 2 gas, It is possible to reduce the excessive inclusion of F atoms in the buffer layer 37 that are not bonded to atoms constituting the crystal lattice. Thereby, it is possible to reduce the F atoms that move into the buffer layer 37 and reach the surfaces of the source electrode 35 and the drain electrode 36 after the film is formed. Therefore, the surface deterioration of the source electrode 35 and the drain electrode 36 can be suppressed.

此外，鈍化層38的成膜中不用H2O氣體。因此，在鈍化層38內，相較於緩衝層37含有更多F原子。緩衝層37防礙了鈍化層38的成膜中所發生的F自由基或F離子到達源極電極35及汲極電極36的表面，達到保護源極電極35及汲極電極36的表面的效果。在鈍化層38的成膜後，為了使從鈍化層38內的晶格脫離的F原子，不要到達源極電極35及汲極電極36的表面，緩衝層37的厚度較佳為10nm以上。 In addition, H 2 O gas is not used in the film formation of the passivation layer 38. Therefore, the passivation layer 38 contains more F atoms than the buffer layer 37. The buffer layer 37 prevents the F radicals or F ions generated during the film formation of the passivation layer 38 from reaching the surfaces of the source electrode 35 and the drain electrode 36, and achieves the effect of protecting the surfaces of the source electrode 35 and the drain electrode 36 . After the passivation layer 38 is formed, in order to prevent the F atoms detached from the crystal lattice in the passivation layer 38 from reaching the surfaces of the source electrode 35 and the drain electrode 36, the thickness of the buffer layer 37 is preferably 10 nm or more.

此外，緩衝層37因為利用H2O氣體成膜，在緩衝層37內含有微量H原子。緩衝層37內的H原子因為會對通道34的特性劣化有影響，過厚地層積緩衝層37並不好。因此，緩衝層37比鈍化層38還薄，例如形成50nm以下的厚度。因此，緩衝層37較佳為形成10nm以上50nm以下的範圍內的厚度。 In addition, since the buffer layer 37 is formed using H 2 O gas, a small amount of H atoms is contained in the buffer layer 37. Since the H atoms in the buffer layer 37 will affect the deterioration of the characteristics of the channel 34, it is not good to build the buffer layer 37 too thickly. Therefore, the buffer layer 37 is thinner than the passivation layer 38, for example, the thickness is 50 nm or less. Therefore, the buffer layer 37 is preferably formed to have a thickness in the range of 10 nm or more and 50 nm or less.

[成膜順序] [Film formation sequence]

圖3為表示緩衝層37及鈍化層38的成膜順序的一例的流程圖。圖4為用以說明緩衝層37及鈍化層38的成膜過程的一例的剖面圖。圖3所示的流程圖，係依照預定的程式，藉由控制器27來控制成膜裝置10的各部動作來執行。圖3所示的流程圖，表示了成膜方法及TFT30的製造方法的一例。 FIG. 3 is a flowchart showing an example of the film formation sequence of the buffer layer 37 and the passivation layer 38. 4 is a cross-sectional view for explaining an example of the film formation process of the buffer layer 37 and the passivation layer 38. The flowchart shown in FIG. 3 is executed by the controller 27 controlling the operations of each part of the film forming apparatus 10 in accordance with a predetermined program. The flowchart shown in FIG. 3 shows an example of the film forming method and the manufacturing method of the TFT 30.

首先，打開閘閥16，例如，如圖4(A)所示，將形成閘極電極32、通道34、源極電極35、及汲極電極36的基板S搬入處理容器11內(S100)。搬入處理容器11內的基板S，露出通道34、源極電極35、及汲極電極36。將基板S搬入處理容器11內後，閘閥16關閉。此外，根據工程的不同，屬於形成閘極電極32、通道34、源極電極35、及汲極電極36的一部分的基板也可以。 First, the gate valve 16 is opened, for example, as shown in FIG. 4(A), the substrate S on which the gate electrode 32, the channel 34, the source electrode 35, and the drain electrode 36 are formed is carried into the processing container 11 (S100). The substrate S carried in the processing container 11 exposes the channel 34, the source electrode 35, and the drain electrode 36. After the substrate S is carried into the processing container 11, the gate valve 16 is closed. In addition, depending on the process, it may be a substrate that forms part of the gate electrode 32, the channel 34, the source electrode 35, and the drain electrode 36.

接著，向處理容器11內分別將SiF4氣體、O2氣體、及H2O氣體以預定的流量供給至處理容器11內(S101)。具體來說，開放閥門22a~22c，藉由流量控制器21a將來自氣體供給源20a的SiF4氣體控制在預定流量、藉由流量控制器21b將來自氣體供給源20b的O2氣體控制在預定流量、藉由流量控制器21c將來自氣體供給源20c的H2O氣體控制在預定流量。藉此，將SiF4氣體、O2氣體、及H2O氣體分別以預定流量混合的混合氣體供給至處理容器11內。此時，將閥門22d及22e關閉。步驟S101為第1供給步驟的一例。 Next, SiF 4 gas, O 2 gas, and H 2 O gas are respectively supplied into the processing container 11 at a predetermined flow rate into the processing container 11 (S101 ). Specifically, the valves 22a-22c are opened, the SiF 4 gas from the gas supply source 20a is controlled at a predetermined flow rate by the flow controller 21a, and the O 2 gas from the gas supply source 20b is controlled at a predetermined flow rate by the flow controller 21b. Flow rate: The H 2 O gas from the gas supply source 20 c is controlled to a predetermined flow rate by the flow controller 21 c. Thereby, a mixed gas in which SiF 4 gas, O 2 gas, and H 2 O gas are mixed at a predetermined flow rate is supplied into the processing container 11. At this time, the valves 22d and 22e are closed. Step S101 is an example of the first supply step.

接著，藉由排氣裝置17將處理容器11內控制成預定壓力，藉由高頻電源26通過整合器25對天線13供給預定大小的高頻電力。藉此，在處理容器11內產生感應電場，生成SiF4氣體、O2氣體、及H2O氣體的混合氣體的電漿(S102)。接著，藉由包含於電漿中的陽離子及自由基，將SiO膜即緩衝層37，層積在通道34、源極電極35、及汲極電極36上(S103)。藉此，例如，如圖 4(B)所示，在通道34、源極電極35、及汲極電極36上，形成預定厚度(例如10~50nm)的緩衝層37。步驟S103為第1成膜步驟的一例。 Next, the inside of the processing container 11 is controlled to a predetermined pressure by the exhaust device 17, and the high-frequency power of a predetermined magnitude is supplied to the antenna 13 by the high-frequency power source 26 through the integrator 25. Thereby, an induced electric field is generated in the processing container 11 , and a plasma of a mixed gas of SiF 4 gas, O 2 gas, and H 2 O gas is generated (S102). Next, by the cations and radicals contained in the plasma, the SiO film, which is the buffer layer 37, is laminated on the channel 34, the source electrode 35, and the drain electrode 36 (S103). Thereby, for example, as shown in FIG. 4(B), a buffer layer 37 with a predetermined thickness (for example, 10-50 nm) is formed on the channel 34, the source electrode 35, and the drain electrode 36. Step S103 is an example of the first film forming step.

其中，本實施形態中的緩衝層37的主成膜條件，例如如以下所示。 However, the main film forming conditions of the buffer layer 37 in this embodiment are as follows, for example.

處理容器11的壓力：10mT Pressure of processing vessel 11: 10mT

高頻電力：1.49W/cm2 High frequency power: 1.49W/cm 2

高頻電力的頻率：13.56MHz Frequency of high-frequency power: 13.56MHz

流量比：SiF4/O2/H2O=20/1300/120sccm Flow rate ratio: SiF 4 /O 2 /H 2 O=20/1300/120sccm

基板S的溫度：200℃ The temperature of the substrate S: 200°C

接著，閥門22a~22c關閉，藉由排氣裝置17將處理容器11內的氣體排氣(S104)。接著，向處理容器11內分別將SiF4氣體、SiCl4氣體、及N2氣體以預定的流量供給至處理容器11內(S105)。具體來說，開放閥門22a、閥門22d、及閥門22e，藉由流量控制器21a將來自氣體供給源20a的SiF4氣體控制在預定流量、藉由流量控制器21d將來自氣體供給源20d的N2氣體控制在預定流量、藉由流量控制器21e將來自氣體供給源20e的SiCl4氣體控制在預定流量。藉此，將SiF4氣體、SiCl4氣體、及N2氣體分別以預定流量混合的混合氣體供給至處理容器11內。步驟S105為第2供給步驟的一例。 Next, the valves 22a-22c are closed, and the gas in the processing container 11 is exhausted by the exhaust device 17 (S104). Next, SiF 4 gas, SiCl 4 gas, and N 2 gas are respectively supplied into the processing container 11 at a predetermined flow rate (S105). Specifically, the valve 22a, the valve 22d, and the valve 22e are opened, the SiF 4 gas from the gas supply source 20a is controlled at a predetermined flow rate by the flow controller 21a, and the N from the gas supply source 20d is controlled by the flow controller 21d. 2 The gas is controlled at a predetermined flow rate, and the SiCl 4 gas from the gas supply source 20e is controlled at a predetermined flow rate by the flow controller 21e. Thereby, a mixed gas in which SiF 4 gas, SiCl 4 gas, and N 2 gas are mixed at a predetermined flow rate is supplied into the processing container 11. Step S105 is an example of the second supply step.

接著，藉由排氣裝置17將處理容器11內控制成預定壓力，藉由高頻電源26通過整合器25對天線13供給預定大小的高頻電力。藉此，在處理容器11內產 生感應電場，生成SiF4氣體、SiCl4氣體、及N2氣體的混合氣體的電漿(S106)。接著，藉由包含於電漿中的陽離子及自由基，將SiN膜即鈍化層38，層積在緩衝層37上(S107)。藉此，例如，如圖4(C)所示，在緩衝層37上，形成預定厚度(例如數十~數百nm)的鈍化層38。步驟S107為第2成膜步驟的一例。 Next, the inside of the processing container 11 is controlled to a predetermined pressure by the exhaust device 17, and the high-frequency power of a predetermined magnitude is supplied to the antenna 13 by the high-frequency power source 26 through the integrator 25. Thereby, an induced electric field is generated in the processing container 11, and a plasma of a mixed gas of SiF 4 gas, SiCl 4 gas, and N 2 gas is generated (S106). Next, the passivation layer 38, which is a SiN film, is laminated on the buffer layer 37 by the cations and radicals contained in the plasma (S107). Thereby, for example, as shown in FIG. 4(C), a passivation layer 38 having a predetermined thickness (for example, tens to hundreds of nm) is formed on the buffer layer 37. Step S107 is an example of the second film forming step.

其中，本實施形態中的鈍化層38的主成膜條件，例如如以下所示。 However, the main film formation conditions of the passivation layer 38 in this embodiment are as follows, for example.

處理容器11的壓力：10mT Pressure of processing vessel 11: 10mT

高頻電力：2.23W/cm2 High frequency power: 2.23W/cm 2

高頻電力的頻率：13.56MHz Frequency of high-frequency power: 13.56MHz

流量比：SiF4/SiCl4/N2=50/50/1500sccm Flow rate ratio: SiF 4 /SiCl 4 /N 2 =50/50/1500sccm

基板S的溫度：200℃ The temperature of the substrate S: 200°C

接著，閥門22a、閥門22d、及閥門22e關閉，藉由排氣裝置17將處理容器11內的氣體排氣(S108)。接著，打開閘閥16，將形成緩衝層37及鈍化層38的基板S從處理容器11內搬出(S109)。 Next, the valve 22a, the valve 22d, and the valve 22e are closed, and the gas in the processing container 11 is exhausted by the exhaust device 17 (S108). Next, the gate valve 16 is opened, and the substrate S on which the buffer layer 37 and the passivation layer 38 are formed is carried out from the processing container 11 (S109).

[緩衝層37的組成] [Composition of buffer layer 37]

在此，說明有關緩衝層37的組成的測定結果。圖5為利用RBS/HFS法表示保護膜的原子組成百分率的測定結果的圖。此外，RBS為Ruther ford Backscattering Spectrometry的略稱、HFS為Hydrogen Forward Scattering Spectrometry的略稱。圖5(A)表示比較例中 保護膜的原子組成百分率的測定結果、圖5(B)表示本實施形態中的保護膜(緩衝層37)的原子組成百分率的測定結果。比較例中的保護膜除了在成膜時的混合氣體中不含有H2O氣體這點以外，為藉由和本實施形態同樣的條件來形成的膜。 Here, the measurement results regarding the composition of the buffer layer 37 will be described. Fig. 5 is a graph showing the measurement result of the atomic composition percentage of the protective film by the RBS/HFS method. In addition, RBS is an abbreviation for Ruther ford Backscattering Spectrometry, and HFS is an abbreviation for Hydrogen Forward Scattering Spectrometry. Fig. 5(A) shows the measurement result of the atomic composition percentage of the protective film in the comparative example, and Fig. 5(B) shows the measurement result of the atomic composition percentage of the protective film (buffer layer 37) in this embodiment. The protective film in the comparative example is a film formed under the same conditions as in the present embodiment, except that H 2 O gas is not contained in the mixed gas at the time of film formation.

如圖5(A)所示，在比較例的保護膜中，矽(Si)原子、O原子、及F原子分別佔32%、59%、及9%，不包含H原子。將比較例的保護膜層積在源極電極35及汲極電極36上時，因電漿在成膜中所發生的F自由基或F離子，會與源極電極35及汲極電極36的表面的Cu原子反應。因此，源極電極35及汲極電極36的表面變質。此外，在比較例的保護膜中，因為其材料氣體不含有H2O氣體，在保護膜中不存在H原子。 As shown in FIG. 5(A), in the protective film of the comparative example, silicon (Si) atoms, O atoms, and F atoms account for 32%, 59%, and 9%, respectively, and H atoms are not included. When the protective film of the comparative example is laminated on the source electrode 35 and the drain electrode 36, the F radicals or F ions generated during the plasma film formation will interact with the source electrode 35 and the drain electrode 36. The Cu atoms on the surface react. Therefore, the surface of the source electrode 35 and the drain electrode 36 is deteriorated. In addition, in the protective film of the comparative example, since the material gas does not contain H 2 O gas, H atoms are not present in the protective film.

相對於此，本實施形態的緩衝層37中，如圖5(B)所示，Si原子、O原子、F原子、及H原子分別佔32%、63%、4%、及1%。在本實施形態中，因為成膜時的混合氣體中不含有H2O氣體，在成膜時F原子作為HF氣體被排氣。因此，因電漿在成膜中所發生的剩餘F自由基或F離子所引起的源極電極35及汲極電極36的表面變質不會發生而成膜。此外，在此形成的緩衝層37中含有的F原子的比例低，能抑制經時變化的TFT特性劣化。 In contrast, in the buffer layer 37 of this embodiment, as shown in FIG. 5(B), Si atoms, O atoms, F atoms, and H atoms account for 32%, 63%, 4%, and 1%, respectively. In this embodiment, since H 2 O gas is not contained in the mixed gas during film formation, F atoms are exhausted as HF gas during film formation. Therefore, the surface deterioration of the source electrode 35 and the drain electrode 36 caused by the remaining F radicals or F ions generated during the plasma film formation does not occur to form a film. In addition, the ratio of F atoms contained in the buffer layer 37 formed here is low, and the deterioration of the TFT characteristics that change with time can be suppressed.

此外，本實施形態的緩衝層37中，雖含有H原子，但在1%以下非常少量。因此，在氧化物半導體即通道34上層積的緩衝層37雖與通道34接觸，但緩衝層 37內所含有的H原子對通道34造成的影響會在TFT特性上的容許範圍內。 In addition, although the buffer layer 37 of this embodiment contains H atoms, it is very small at 1% or less. Therefore, although the buffer layer 37 laminated on the channel 34, which is the oxide semiconductor, is in contact with the channel 34, the buffer layer The influence of the H atoms contained in 37 on the channel 34 will be within the allowable range on the TFT characteristics.

〔成膜狀態的比較〕 〔Comparison of film formation state〕

圖6為表示每種使用的混合氣體的保護膜的成膜狀態之一例的圖。在圖6的例中，將在錐狀的Cu電極上成膜的保護膜的狀態作為模式圖表示。 Fig. 6 is a diagram showing an example of the film formation state of the protective film for each mixed gas used. In the example of FIG. 6, the state of the protective film formed on the tapered Cu electrode is shown as a schematic diagram.

作為成膜時的混合氣體，在使用SiF4氣體/O2氣體、或SiF4氣體/SiCl4氣體/O2氣體時，在Cu電極上，作為保護膜形成SiO膜。在Cu電極上成膜的SiO膜，例如如圖6所示，在Cu電極上成長成柱狀，膜質差。此外，Cu電極的表面也發生變質。 When SiF 4 gas/O 2 gas or SiF 4 gas/SiCl 4 gas/O 2 gas is used as a mixed gas during film formation, a SiO film is formed as a protective film on the Cu electrode. The SiO film formed on the Cu electrode, for example, as shown in FIG. 6, grows into a columnar shape on the Cu electrode, and the film quality is poor. In addition, the surface of the Cu electrode is also deteriorated.

作為成膜時的混合氣體，利用SiF4氣體/N2氣體時，在Cu電極上作為保護膜形成SiN膜。在Cu電極上成膜的SiN膜，例如如圖6所示，在Cu電極的柱部膜質惡化。 When SiF 4 gas/N 2 gas is used as a mixed gas during film formation, a SiN film is formed as a protective film on the Cu electrode. The SiN film formed on the Cu electrode, for example, as shown in FIG. 6, the film quality deteriorates in the column portion of the Cu electrode.

作為成膜時的混合氣體，利用SiF4氣體/SiCl4氣體/N2氣體時，在Cu電極上作為保護膜形成SiN膜。在Cu電極上成膜的SiN膜，例如如圖6所示，在Cu電極的錐部Cu電極膨潤，對Cu電極發生大破壞。 When SiF 4 gas/SiCl 4 gas/N 2 gas is used as a mixed gas during film formation, a SiN film is formed as a protective film on the Cu electrode. The SiN film formed on the Cu electrode, for example, as shown in FIG. 6, the Cu electrode swells at the tapered portion of the Cu electrode, and the Cu electrode is greatly damaged.

相對於此，如本實施形態，作為成膜時的混合氣體，利用SiF4/O2/H2O氣體時，在Cu電極上作為保護膜(緩衝層37)形成SiO膜。在Cu電極上成膜的SiO膜，例如如圖6所示，在Cu電極的平坦部及錐部，Cu電 極不會發生變色、腐蝕、膨潤等破壞，SiO膜的膜質也良好。 On the other hand, as in this embodiment, when SiF 4 /O 2 /H 2 O gas is used as the mixed gas during film formation, an SiO film is formed as a protective film (buffer layer 37) on the Cu electrode. The SiO film formed on the Cu electrode is, for example, as shown in FIG. 6, in the flat part and the tapered part of the Cu electrode, the Cu electrode does not undergo damage such as discoloration, corrosion, swelling, and the like, and the film quality of the SiO film is also good.

如圖6所示，在比較例中氣體的組合中，無論怎麼組合，Cu電極上形成的保護膜的膜質差，Cu電極會產生變質。相對於此，在本實施形態的氣體組合中，不會使Cu電極變質，能在Cu電極上形成良好的SiO膜。 As shown in FIG. 6, in the gas combination in the comparative example, no matter how the combination is, the quality of the protective film formed on the Cu electrode is poor, and the Cu electrode will be deteriorated. In contrast, in the gas combination of the present embodiment, the Cu electrode is not deteriorated, and a good SiO film can be formed on the Cu electrode.

以上，說明了有關所揭示的成膜方法及TFT的製造方法的實施形態。從上記說明可以清楚地明白，根據本實施形態的成膜方法及TFT的製造方法，在降低保護膜中H原子的含有量的同時，也能在以Cu構成的電極上將保護膜正常成膜。 Above, the embodiments of the disclosed film forming method and TFT manufacturing method have been described. It is clear from the above description that according to the film forming method and TFT manufacturing method of this embodiment, the H atom content in the protective film can be reduced, and the protective film can be normally formed on the electrode composed of Cu. .

[其他] [other]

然而，本發明並不限定於上述實施形態，在其要旨的範圍內，可以有多種的可能的變形。 However, the present invention is not limited to the above-mentioned embodiment, and various possible modifications are possible within the scope of the gist.

例如，在上述實施形態中的TFT30，例如，如圖2所示，層積閘極絕緣層33以覆蓋下塗層31及閘極電極32，在閘極絕緣層33之上，形成以氧化物半導體構成的通道34。接著，通道34在其下面與閘極絕緣層33的上面接觸。因此，閘極絕緣層33的H原子含有量少較佳。H原子的含有量少的氧化矽膜，例如，可以利用SiF4等氟化矽氣體、O2氣體等不含H原子的含氧氣體來成膜。 For example, in the TFT 30 in the above embodiment, for example, as shown in FIG. 2, a gate insulating layer 33 is laminated to cover the undercoat layer 31 and the gate electrode 32, and an oxide is formed on the gate insulating layer 33. Channel 34 formed by semiconductors. Then, the channel 34 is in contact with the upper surface of the gate insulating layer 33 at its lower surface. Therefore, it is preferable that the H atom content of the gate insulating layer 33 is small. A silicon oxide film containing a small amount of H atoms can be formed using, for example, a silicon fluoride gas such as SiF 4, or an oxygen-containing gas that does not contain H atoms, such as O 2 gas.

但是，因為在閘極絕緣層33的成膜時使用含 有F原子的氣體，在閘極絕緣層33的成膜時，因為包含於處理氣體的F原子，閘極電極32的表面會有變質的情況。因此，例如如圖7所示的TFT30a，在閘極絕緣層33與下塗層31及閘極電極32之間，層積緩衝層37a較佳。圖7為表示TFT構造之其他例的剖面圖。緩衝層37a藉由與上述實施形態同樣的條件成膜。藉此，在形成閘極絕緣層33的過程中，包含於處理氣體的F原子造成的閘極電極32的變質能被抑制。 However, because the gate insulating layer 33 is formed using the In the gas containing F atoms, during the formation of the gate insulating layer 33, the surface of the gate electrode 32 may be deteriorated due to the F atoms contained in the processing gas. Therefore, for the TFT 30a shown in FIG. 7, for example, a buffer layer 37a is preferably laminated between the gate insulating layer 33 and the undercoat layer 31 and the gate electrode 32. Fig. 7 is a cross-sectional view showing another example of the TFT structure. The buffer layer 37a is formed into a film under the same conditions as in the above-mentioned embodiment. Thereby, in the process of forming the gate insulating layer 33, the deterioration of the gate electrode 32 caused by the F atoms contained in the processing gas can be suppressed.

此外，圖2及圖7所示的例中，在閘極絕緣層33之上，形成由Cu構成的源極電極35及汲極電極36，源極電極35及汲極電極36的下面接觸於閘極絕緣層33的上面。因此，當在閘極絕緣層33內未與構成晶格的原子結合的F原子存在時，因該F原子，源極電極35及汲極電極36的下面會有變質的情形。因此，在閘極絕緣層33之上形成源極電極35及汲極電極36前，在閘極絕緣層33的上面全體、或著閘極絕緣層33的上面，配置源極電極35及汲極電極36的區域也層積緩衝層37a較佳。藉此，能夠抑制源極電極35及汲極電極36的下面的變質。 In addition, in the examples shown in FIGS. 2 and 7, on the gate insulating layer 33, a source electrode 35 and a drain electrode 36 made of Cu are formed, and the lower surfaces of the source electrode 35 and the drain electrode 36 are in contact with Above the gate insulating layer 33. Therefore, when F atoms that are not bonded to atoms constituting the crystal lattice exist in the gate insulating layer 33, the bottom surfaces of the source electrode 35 and the drain electrode 36 may be deteriorated due to the F atoms. Therefore, before the source electrode 35 and the drain electrode 36 are formed on the gate insulating layer 33, the source electrode 35 and the drain electrode are arranged on the entire upper surface of the gate insulating layer 33, or on the upper surface of the gate insulating layer 33. It is also preferable to laminate the buffer layer 37a in the area of the electrode 36. Thereby, it is possible to suppress the deterioration of the lower surfaces of the source electrode 35 and the drain electrode 36.

此外，在上述實施形態中，雖說明底閘極型TFT之例，但頂閘極型TFT也適用本發明。圖8為表示頂閘極型的TFT40構造之一例的剖面圖。 In addition, in the above-mentioned embodiment, although an example of a bottom gate type TFT is described, the present invention is also applicable to a top gate type TFT. FIG. 8 is a cross-sectional view showing an example of the structure of a top gate type TFT 40.

TFT40，例如，如圖8所示，具備：在基板S上形成的下塗層41、在下塗層41之上部分形成的源極電 極43及汲極電極44、在源極電極43及汲極電極44之間形成的通道42。下塗層41例如為SiO膜或SiN膜。通道42為IGZO等氧化物半導體。源極電極43及汲極電極44藉由例如含Cu材料形成。 The TFT 40, for example, as shown in FIG. 8, includes an undercoat layer 41 formed on the substrate S, and a source electrode formed on the undercoat layer 41. The electrode 43 and the drain electrode 44, and the channel 42 formed between the source electrode 43 and the drain electrode 44. The undercoat layer 41 is, for example, a SiO film or a SiN film. The channel 42 is an oxide semiconductor such as IGZO. The source electrode 43 and the drain electrode 44 are formed of, for example, a Cu-containing material.

此外，TFT40，例如，如圖8所示，具備：以覆蓋通道42、源極電極43、及汲極電極44的方式在通道42、源極電極43、及汲極電極44之上形成的緩衝層45、在緩衝層45之上形成的閘極絕緣層46。緩衝層45為藉由與上述實施形態的緩衝層37同樣的條件成膜的SiO膜。閘極絕緣層46例如為SiO膜或SiN膜。 In addition, the TFT 40, for example, as shown in FIG. 8, includes a buffer formed on the channel 42, the source electrode 43, and the drain electrode 44 so as to cover the channel 42, the source electrode 43, and the drain electrode 44. Layer 45, a gate insulating layer 46 formed on the buffer layer 45. The buffer layer 45 is an SiO film formed under the same conditions as the buffer layer 37 of the above-mentioned embodiment. The gate insulating layer 46 is, for example, a SiO film or a SiN film.

此外，TFT40，例如，如圖8所示，具備：隔著緩衝層45及閘極絕緣層46配置於通道42的正上方而形成的閘極電極47、以覆蓋閘極絕緣層46及閘極電極47的方式形成的緩衝層49、形成於緩衝層49之上的鈍化層48。閘極電極47藉由例如含Cu材料形成。因此，在閘極電極47與鈍化層48之間形成緩衝層49。鈍化層48例如為SiO膜或SiN膜。 In addition, the TFT 40, for example, as shown in FIG. 8, includes a gate electrode 47 formed just above the channel 42 with a buffer layer 45 and a gate insulating layer 46 interposed therebetween, so as to cover the gate insulating layer 46 and the gate electrode. The buffer layer 49 formed by the electrode 47 and the passivation layer 48 formed on the buffer layer 49. The gate electrode 47 is formed of, for example, a Cu-containing material. Therefore, a buffer layer 49 is formed between the gate electrode 47 and the passivation layer 48. The passivation layer 48 is, for example, a SiO film or a SiN film.

因此，在頂閘極型的TFT40中也一樣，在通道42、源極電極43、及汲極電極44與閘極絕緣層46之間，藉由設置緩衝層45，在能夠以H原子的含有量低的保護膜覆蓋通道42的同時，也能在以Cu構成的源極電極43及汲極電極44上正常形成保護膜。 Therefore, in the top gate type TFT 40 as well, the buffer layer 45 is provided between the channel 42, the source electrode 43, the drain electrode 44 and the gate insulating layer 46, so that the content of H atoms can be While covering the channel 42 with a low-volume protective film, a protective film can also be normally formed on the source electrode 43 and the drain electrode 44 made of Cu.

此外，在上述實施形態中，雖說明有關在構成源極電極、汲極電極、或閘極電極構成的Cu部之上形 成緩衝層的情形，但本發明不限於此，形成緩衝層的Cu部除了電極以外，是構成配線及其他要素者也可以。 In addition, in the above-mentioned embodiment, although it is explained about the shape on the Cu portion that constitutes the source electrode, the drain electrode, or the gate electrode. In the case of forming a buffer layer, the present invention is not limited to this, and the Cu portion forming the buffer layer may constitute wiring and other elements in addition to electrodes.

此外，在上記的實施形態中，雖說明有關處理單一TFT的情形，但同時處理在不同階層的位置的複數TFT也可以。例如，在1次的緩衝層的成膜處理中，一個TFT的源極電極及汲極電極、與其他TFT的閘極電極同時形成緩衝層也可以。 In addition, in the above-mentioned embodiment, although the case of processing a single TFT is described, it is also possible to process a plurality of TFTs located in different hierarchical positions at the same time. For example, in one buffer layer formation process, the source electrode and drain electrode of one TFT may form the buffer layer at the same time as the gate electrode of another TFT.

此外，在上記實施形態中，作為第1氣體，雖以SiF4等氟化矽氣體為例說明，但本發明不限於此。第1氣體為包含鹵素原子的矽系氣體的話，例如，可以是SiCl4等氯化矽氣體、SiBr4等溴化矽氣體、SiI4等碘化矽氣體等。 In addition, in the above embodiment, although silicon fluoride gas such as SiF 4 is used as an example for the description of the first gas, the present invention is not limited to this. If the first gas is a silicon-based gas containing halogen atoms, it may be, for example, silicon chloride gas such as SiCl 4 , silicon bromide gas such as SiBr 4, or silicon iodide gas such as SiI 4.

此外，在上記實施形態中，作為第2氣體，雖以O2氣體為例說明，但本發明不限於此。第2氣體除了O2氣體以外，可以使用N2O氣體、N2氣體、或稀有氣體；作為稀有氣體，例如，可以使用氦(He)、氖(Ne)、氬(Ar)、氪(Kr)等。 In addition, in the above- mentioned embodiment, although O 2 gas is used as an example for the description as the second gas, the present invention is not limited to this. The second gas can use N 2 O gas, N 2 gas, or rare gas in addition to O 2 gas; as the rare gas, for example, helium (He), neon (Ne), argon (Ar), krypton (Kr )Wait.

此外，在上記實施形態中，作為第3氣體，雖以H2O氣體為例說明，但本發明不限於此。第3氣體例如是SiH4氣體等也可以。 In addition, in the above- mentioned embodiment, although H 2 O gas is used as an example as the third gas, the present invention is not limited to this. The third gas may be SiH 4 gas or the like, for example.

此外，在上記實施形態中，以作為電漿源利用感應耦合電漿的CVD法來進行成膜的成膜裝置10作為例子來說明，但本發明不限於此。若是利用電漿的CVD法來進行成膜的成膜裝置10，電漿源並不限於感應耦合 電漿，例如，可以使用電容耦合電漿、微波電漿、磁控電漿等等任意的電漿源。 In addition, in the above-mentioned embodiment, the film formation apparatus 10 which performs film formation using the CVD method of inductively coupled plasma as a plasma source was demonstrated as an example, but this invention is not limited to this. In the case of the film forming apparatus 10 that uses plasma CVD method for film formation, the plasma source is not limited to inductive coupling Plasma, for example, can use any plasma source such as capacitively coupled plasma, microwave plasma, magnetron plasma and so on.

此外，在上述實施形態中的成膜方法，例如，將用以實現該成膜方法的程式藉由控制器27來執行而實現。用以實現成膜方法的程式，例如，可以藉由DVD(Digital Versatile Disc)、PD(Phase change rewritable Disk)等光學記錄媒體、MO(Magneto-Optical disk)等光學磁記錄媒體、磁帶媒體、磁記錄媒體、或半導體記憶體等記憶媒體來提供。控制器27從該記憶媒體將程式讀出，藉由執行讀出的程式，來控制成膜裝置10的各部，實現上述實施形態中的成膜方法。此外，控制器27將用以實現成膜方法的程式，從記憶該程式的伺服器等其他裝置通過通信媒體取得該程式並執行也可以。 In addition, the film forming method in the above-mentioned embodiment is realized by executing the program for realizing the film forming method by the controller 27, for example. The program used to realize the film forming method, for example, can be used for optical recording media such as DVD (Digital Versatile Disc), PD (Phase change rewritable Disk), optical magnetic recording media such as MO (Magneto-Optical disk), magnetic tape media, and magnetic Storage media such as recording media or semiconductor memory are provided. The controller 27 reads the program from the storage medium, and executes the read program to control each part of the film forming apparatus 10 to realize the film forming method in the above-mentioned embodiment. In addition, the controller 27 may obtain a program for realizing the film forming method from a server or other device that stores the program through a communication medium and execute the program.

Claims (7)

一種成膜方法，包含：將露出含Cu材料所形成的構造物即Cu部的基板搬入處理容器內的搬入步驟；對前述處理容器內，供給第1氣體、第2氣體、及第3氣體的第1供給步驟；藉由供給至前述處理容器內的包含前述第1氣體、前述第2氣體、及前述第3氣體的混合氣體之電漿，在前述Cu部上形成保護膜的第1成膜步驟；對前述處理容器內，供給氯化矽氣體或氟化矽氣體或者其等的混合氣體、以及不包含氫原子的含氧氣體或含氮氣體的第2供給步驟；藉由供給至前述處理容器內的包含前述氯化矽氣體或前述氟化矽氣體或者其等的混合氣體、以及前述含氧氣體或前述含氮氣體的混合氣體之電漿，在前述保護膜上，形成氧化矽膜或氮化矽膜的第2成膜步驟；前述第1氣體為包含鹵素原子的矽系氣體；前述第2氣體為O2氣體、N2O氣體、N2氣體、或稀有氣體；前述第3氣體為H2O氣體或SiH4氣體；前述保護膜的氟含有量比前述氧化矽膜或前述氮化矽膜的氟含有量還低。 A film forming method includes: a step of loading a substrate with a Cu portion that is a structure formed of a Cu-containing material into a processing container; and supplying a first gas, a second gas, and a third gas into the processing container The first supply step; the first film formation to form a protective film on the Cu portion by a plasma containing a mixed gas of the first gas, the second gas, and the third gas supplied into the processing container Step; In the aforementioned processing container, a second supply step of supplying silicon chloride gas, silicon fluoride gas, or a mixed gas thereof, and oxygen-containing gas or nitrogen-containing gas that does not contain hydrogen atoms; by supplying to the aforementioned processing Plasma containing the aforementioned silicon chloride gas or the aforementioned silicon fluoride gas or a mixed gas thereof, and the aforementioned oxygen-containing gas or the aforementioned nitrogen-containing gas mixed gas in the container forms a silicon oxide film or The second film forming step of a silicon nitride film; the first gas is a silicon-based gas containing halogen atoms; the second gas is O 2 gas, N 2 O gas, N 2 gas, or a rare gas; the third gas It is H 2 O gas or SiH 4 gas; the fluorine content of the protective film is lower than the fluorine content of the silicon oxide film or the silicon nitride film. 如請求項1所記載的成膜方法，其中，前述第1氣體 為SiF4氣體；前述第2氣體為O2氣體；前述第3氣體為H2O氣體。 The film forming method according to claim 1, wherein the first gas is SiF 4 gas; the second gas is O 2 gas; and the third gas is H 2 O gas. 如請求項1或2所記載的成膜方法，其中，前述保護膜的厚度為10nm以上50nm以下的範圍內。 The film forming method according to claim 1 or 2, wherein the thickness of the protective film is within a range of 10 nm or more and 50 nm or less. 如請求項1或2所記載的成膜方法，其中，在前述基板上露出氧化物半導體；在前述第1成膜步驟中，在前述Cu部及前述氧化物半導體上形成前述保護膜。 The film forming method according to claim 1 or 2, wherein the oxide semiconductor is exposed on the substrate; and in the first film forming step, the protective film is formed on the Cu portion and the oxide semiconductor. 如請求項4所記載的成膜方法，其中，前述氧化物半導體構成TFT(Thin Film Transistor)的通道。 The film forming method according to claim 4, wherein the oxide semiconductor constitutes a channel of a TFT (Thin Film Transistor). 如請求項1或2所記載的成膜方法，其中，在前述基板上露出的前述Cu部為TFT源極電極、汲極電極、及閘極電極中的至少一者。 The film forming method according to claim 1 or 2, wherein the Cu portion exposed on the substrate is at least one of a TFT source electrode, a drain electrode, and a gate electrode. 一種TFT的製造方法，包含：將配置有含Cu材料所形成的源極電極及汲極電極，且在前述源極電極與前述汲極電極之間配置有氧化物半導體，並露出前述源極電極、前述汲極電極、及前述氧化物半導體的基板，搬入處理容 器內的搬入步驟；對前述處理容器內，供給第1氣體、第2氣體、及第3氣體的第1供給步驟；藉由供給至前述處理容器內的包含前述第1氣體、前述第2氣體、及前述第3氣體的混合氣體之電漿，在前述源極電極、前述汲極電極、及前述氧化物半導體上形成保護膜的第1成膜步驟；對前述處理容器內，供給氯化矽氣體或氟化矽氣體或者其等的混合氣體、以及不包含氫原子的含氧氣體或含氮氣體的第2供給步驟；藉由供給至前述處理容器內的包含前述氯化矽氣體或前述氟化矽氣體或者其等的混合氣體、以及前述含氧氣體或前述含氮氣體的混合氣體之電漿，在前述保護膜上，形成氧化矽膜或氮化矽膜的第2成膜步驟前述第1氣體為包含鹵素原子的矽系氣體；前述第2氣體為O2氣體、N2O氣體、N2氣體、或稀有氣體；前述第3氣體為H2O氣體或SiH4氣體；前述保護膜的氟含有量比前述氧化矽膜或前述氮化矽膜的氟含有量還低。 A method for manufacturing a TFT includes: arranging a source electrode and a drain electrode formed of a Cu-containing material, and arranging an oxide semiconductor between the source electrode and the drain electrode, and exposing the source electrode , The aforementioned drain electrode and the aforementioned oxide semiconductor substrate, the loading step into the processing container; the first supply step of supplying the first gas, the second gas, and the third gas into the processing container; by supplying To the plasma containing the mixed gas of the first gas, the second gas, and the third gas in the processing container, a protective film is formed on the source electrode, the drain electrode, and the oxide semiconductor The first film forming step; the second supply step of supplying silicon chloride gas, silicon fluoride gas, or a mixed gas thereof, and oxygen-containing gas or nitrogen-containing gas that does not contain hydrogen atoms into the aforementioned processing container; by The plasma containing the silicon chloride gas or the silicon fluoride gas or a mixed gas thereof, and the mixed gas of the oxygen-containing gas or the nitrogen-containing gas supplied into the processing container is formed on the protective film The second film forming step of silicon oxide film or silicon nitride film. The first gas is a silicon-based gas containing halogen atoms; the second gas is O 2 gas, N 2 O gas, N 2 gas, or a rare gas; The third gas is H 2 O gas or SiH 4 gas; the fluorine content of the protective film is lower than the fluorine content of the silicon oxide film or the silicon nitride film.
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