CN107523800A - The manufacture method of film build method and TFT - Google Patents
The manufacture method of film build method and TFT Download PDFInfo
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- CN107523800A CN107523800A CN201710457272.8A CN201710457272A CN107523800A CN 107523800 A CN107523800 A CN 107523800A CN 201710457272 A CN201710457272 A CN 201710457272A CN 107523800 A CN107523800 A CN 107523800A
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- gas
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- 238000000034 method Methods 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims abstract description 331
- 230000008569 process Effects 0.000 claims abstract description 72
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000077 silane Inorganic materials 0.000 claims abstract description 9
- 125000005843 halogen group Chemical group 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 26
- 229910004014 SiF4 Inorganic materials 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 18
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000008246 gaseous mixture Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 124
- 239000010949 copper Substances 0.000 description 52
- 238000002161 passivation Methods 0.000 description 33
- 239000012212 insulator Substances 0.000 description 23
- 125000001153 fluoro group Chemical group F* 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 16
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 229910003910 SiCl4 Inorganic materials 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 230000037452 priming Effects 0.000 description 10
- 150000003254 radicals Chemical class 0.000 description 10
- 238000012545 processing Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000006978 adaptation Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003676 SiBr4 Inorganic materials 0.000 description 1
- 229910004480 SiI4 Inorganic materials 0.000 description 1
- 229910020439 SiO2+4HF Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- HUKGIVMVTNTTRT-UHFFFAOYSA-J silicon(4+) tetraiodate Chemical compound I(=O)(=O)[O-].[Si+4].I(=O)(=O)[O-].I(=O)(=O)[O-].I(=O)(=O)[O-] HUKGIVMVTNTTRT-UHFFFAOYSA-J 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The problem of the present invention the H atom in diaphragm is reduced content and be normally formed on the electrode containing Cu diaphragm.The film build method of diaphragm includes moved step, supplying step and film formation step.In moved step, the substrate that Cu portions expose is moved into process container, wherein Cu portions are the structure formed by the material containing Cu.In supplying step, first gas, second gas and third gas are supplied into process container.In film formation step, using the plasma for being supplied to mixed gas in process container, containing first gas, second gas and third gas, diaphragm is formed in Cu portions.First gas is the silane-based gas is of halogen atom-containing.Second gas is O2Gas, N2O gases, N2Gas or rare gas.Third gas is H2O gases or SiH4Gas.
Description
Technical field
The present invention relates to the manufacture method of film build method and TFT
Background technology
In recent years, as the technology for realizing slim display, thin film transistor (TFT) (TFT is carried out：Thin Film
Transistor utilization).From the viewpoint of electronics degree of excursion is high, consumption electric power reduces etc., TFT raceway groove can use by
The oxide semiconductor that indium (In), gallium (Ga) and zinc (Zn) are formed is so-called IGZO.IGZO under noncrystalline state also have than
Higher electronics degree of excursion.Therefore, by the way that IGZO etc. oxide semiconductor to be used for TFT raceway groove, high speed can be realized
Switch motion.
In addition, in TFT, in order to protect raceway groove not influenceed by the ion and moisture in the external world, such as with silicon nitride (SiN)
The diaphragm covering raceway groove of film etc..Utilizing plasma CVD (Chemical Vapor Deposition, chemical vapor deposition
Product) formed SiN film in the case of, as unstrpped gas, more using silane (SiH4) and ammonia (NH3).Silicon is used as unstrpped gas
In the case of alkane and ammonia, because reduction reaction occurs for hydrogen (H) free radical in film forming, H ions, oxygen atom occurs from oxide half
The disengaging of conductor.In addition, external cause of the H atom for the SiN film that is ingested due to the process, light irradiation, temperature change of time etc., with structure
Into oxygen (O) atomic reaction in the oxide semiconductor of raceway groove, disengaging of the O atom from oxide semiconductor occurs.Thus, aoxidize
The deterioration in characteristics of thing semiconductor, TFT deterioration in characteristics.
In order to prevent the generation of such problem, it is known to use silicon chloride (SiCl4) gas or silicon fluoride (SiF4) gas,
With nitrogenous (N) gas not comprising H atom, technology of the SiN film as diaphragm is formed on oxide semiconductor.Thus, exist
H atom is not present in diaphragm, therefore, it is possible to suppress the deterioration in characteristics of oxide semiconductor.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2015-12131 publications
The content of the invention
Invent problem to be solved
But the material of the gate electrode, source electrode and drain electrode in TFT uses copper (Cu) more.Cu and SiCl4
Chlorine (Cl) atom, SiF contained by gas4Fluorine (F) atomic reaction contained by gas, discoloration, expansion, corrosion are produced on surface sometimes
Deng so-called Cu it is rotten.Therefore, SiCl is being used4Gas or SiF4In the case of gas, in gate electrode, source electrode electricity
It is difficult to be normally formed diaphragm on pole or drain electrode.
If without using SiCl4Gas or SiF4Gas and use silane and ammonia to form the protection of SiN film etc. on electrode
Film, diaphragm can be normally formed on the electrode being made up of Cu.But in this case, it is difficult to reduce the H in diaphragm
The content of atom, the deterioration in characteristics of oxide semiconductor to connect with diaphragm can not be avoided.
For solving the technical scheme of problem
One aspect of the invention is the film build method of diaphragm, including：The base that Cu portions expose is moved into process container
The moved step of plate, wherein Cu portions are the structure formed by the material containing Cu；First gas, second are supplied into process container
First supplying step of gas and third gas；With using be supplied to it is in process container, containing first gas, second gas and
The plasma of the mixed gas of third gas, the first film formation step of diaphragm is formed in Cu portions.First gas is halogen
The silane-based gas is of plain atom, second gas O2Gas, N2O gases, N2Gas or rare gas, third gas H2O gases
Or SiH4Gas.
The effect of invention
According to various aspects of the invention and embodiment, the content of the H atom in diaphragm can be reduced, and by Cu
Diaphragm is normally formed on the electrode of composition.
Brief description of the drawings
Fig. 1 is the summary sectional view of an example of the composition for representing film formation device.
Fig. 2 is the sectional view of an example of the construction for representing TFT.
Fig. 3 is the flow chart of an example of the film formation step for representing cushion and passivation layer.
Fig. 4 is the sectional view for illustrating the film forming procedure of cushion and passivation layer example.
Fig. 5 is the figure of the measurement result for the atom composition percentage for representing diaphragm.
Fig. 6 is the figure of an example of the film-forming state for the diaphragm for representing used every kind of mixed gas.
Fig. 7 is the sectional view of another of the construction for representing TFT.
Fig. 8 is the sectional view of an example of the construction for the TFT for representing top gate type.
Description of reference numerals
S：Substrate；10：Film formation device；11：Process container；12：Mounting table；13：Antenna；14：Window component；15：Gas is led
Entrance；16：Gate valve；17：Exhaust apparatus；18：Exhaust outlet；20a~20e：Gas supply source；21a~21e：Flow controller；
22a~22e：Valve；23：Gas supply pipe；25：Adaptation；26：High frequency electric source；27：Controller；30：TFT；31：Priming coat；
32：Gate electrode；33：Gate insulator；34：Raceway groove；35：Source electrode；36：Drain electrode；37：Cushion；38：Passivation
Layer；40：TFT；41：Priming coat；42：Raceway groove；43：Source electrode；44：Drain electrode；45：Cushion；46：Gate insulator；
47：Gate electrode；48：Passivation layer；49：Cushion.
Embodiment
Hereinafter, an embodiment of the invention is illustrated referring to the drawings.
On disclosed film build method, in one embodiment, including：The base that Cu portions expose is moved into process container
The moved step of plate, wherein, the structure that Cu portions are formed by the material containing Cu；First gas, second are supplied into process container
First supplying step of gas and third gas；With using be supplied to it is in process container, containing first gas, second gas and
The plasma of the mixed gas of third gas, the first film formation step of diaphragm is formed in Cu portions.First gas is halogen
The silane-based gas is of plain atom, second gas O2Gas, N2O gases, N2Gas or rare gas, third gas H2O gases
Or SiH4Gas.
In addition, in an embodiment of disclosed film build method, first gas can be SiF4Gas, second gas
Can be O2Gas, third gas can be H2O gases.
In addition, in an embodiment of disclosed film build method, diaphragm can be for more than 10nm below 50nm's
In the range of thickness.
In addition, in an embodiment of disclosed film build method, exposing on substrate has oxide semiconductor,
In one film formation step, diaphragm is formed in Cu portions and oxide semiconductor.
In addition, in an embodiment of disclosed film build method, oxide semiconductor may be constructed TFT raceway groove.
In addition, in an embodiment of disclosed film build method, the Cu portions exposed on substrate can be TFT source
It is at least one in pole electrode, drain electrode and gate electrode.
In addition, on disclosed film build method, in one embodiment, can also include：Supplied into process container
Silicon chloride gas or silicon fluoride gas either their mixed gas and oxygen-containing gas or nitrogenous gas not comprising hydrogen atom
The second supplying step；In process container, silicon chloride gas or silicon fluoride gas or their mixing are supplied to utilizing
The plasma of gas and mixed gas containing oxygen-containing gas or nitrogenous gas, formed on diaphragm silicon oxide film or
Silicon nitride film.
In addition, the manufacture method on disclosed TFT, in one embodiment, including：Base is moved into process container
The moved step of plate, wherein, the substrate is configured with the source electrode and drain electrode formed by the material containing Cu, in source electrode
And drain electrode and between be configured with oxide semiconductor, source electrode, drain electrode and oxide semiconductor expose；To processing
The supplying step of supply first gas, second gas and third gas in container；With using be supplied to it is in process container, contain
The plasma of the mixed gas of first gas, second gas and third gas, in source electrode, drain electrode and oxide half
The film formation step of diaphragm is formed on conductor.First gas be halogen atom-containing silane-based gas is, second gas O2Gas, N2O
Gas, N2Gas or rare gas, third gas H2O gases or SiH4Gas.
Hereinafter, the embodiment based on film build method and TFT manufacture method disclosed in accompanying drawing detailed description.It is in addition, public
The film build method and TFT manufacture method opened are not limited to present embodiment.
[composition of film formation device 10]
First, the film formation device 10 involved by an embodiment of the invention is illustrated.Fig. 1 represents film formation device 10
The summary sectional view of the example formed.Film formation device 10 in present embodiment is the plasma chemistry of inductively type
Be vapor-deposited (ICP-CVD) device.Film formation device 10 has the process container 11 of approximately parallelepiped body shape.In process container 11
It is configured with the mounting table 12 that substrate S is positioned in upper surface.Temperature control device (not shown) is provided with mounting table 12, is led to
The temperature control device is crossed, can be defined temperature by the temperature control for the substrate S being positioned in mounting table 12.
Substrate S is that can be used in such as FPD (Flat Panel Display, flat-panel monitor), foil display
The glass substrate or plastic base of (sheet display) etc..The top of process container 11 is provided with composition process container
The window component 14 of 11 ceiling, day is configured in a manner of relative with the mounting table 12 inside process container 11 on window component 14
Line 13.Window component 14 separates the inside and outside of process container 11 such as being formed by dielectric body.In addition, window component 14 can
To be made up of multiple cutting plates.
Closed in the side wall of process container 11 formed with the opening for moving into and taking out of substrate S, the opening by gate valve 16
Close.Exhaust outlet 18 is provided with the bottom of process container 11, exhaust outlet 18 is connected with exhaust apparatus 17.Exhaust apparatus 17 is via row
Gas port 18 will vacuumize in process container 11, can be by the inner pressure relief of process container 11 to defined pressure.
Window component 14 via insulating properties (not shown) part by process container 11 side wall supports, window component 14 and processing
Container 11 is not directly contacted with, and is not conducted.In addition, window component 14 is with almost parallel in the substrate S with being positioned in mounting table 12
Face on can at least cover substrate S entire surface size.
The side wall of process container 11 is provided with gas introduction port 15, gas introduction port 15 is via gas supply pipe 23 and valve
22a~22e connections.Valve 22a is connected via flow controller 21a with gas supply source 20a.Valve 22b is via flow controller 21b
It is connected with gas supply source 20b.Valve 22c is connected via flow controller 21c with gas supply source 20c.Valve 22d is via flow control
Device 21d processed is connected with gas supply source 20d.Valve 22e is connected via flow controller 21e with gas supply source 20e.
Gas supply source 20a is the supply source of the silane-based gas is of halogen atom-containing.In the present embodiment, gas supply source
20a supplies SiF4Gas.Gas supply source 20b is O2The supply source of gas.Gas supply source 20c is H2The supply source of O gases.
Gas supply source 20d is N2The supply source of gas.Gas supply source 20e is SiCl4The supply source of gas.In the present embodiment,
Gas supply source 20e supplies SiCl4Gas.The gas supplied from gas supply source 20a into process container 11 is first gas
An example.The gas supplied from gas supply source 20b into process container 11 is an example of second gas.By gas
The gas that supply source 20c supplies into process container 11 is an example of third gas.
From the SiF of gas supply source 20a supplies4Gas adjusts flow by flow controller 21a, via valve 22a and gas
Supply pipe 23 is supplied in process container 11 from gas introduction port 15.In addition, the O from gas supply source 20b supplies2Gas is by flowing
Amount controller 21b adjusts flow, is supplied to via valve 22b and gas supply pipe 23 from gas introduction port 15 in process container 11.
In addition, the H from gas supply source 20c supplies2O gases adjust flow by flow controller 21c, are supplied via valve 22c and gas
Pipe 23 is supplied in process container 11 from gas introduction port 15.In addition, the N from gas supply source 20d supplies2Gas is by flow control
Device 21d processed adjusts flow, is supplied to via valve 22d and gas supply pipe 23 from gas introduction port 15 in process container 11.In addition,
From the SiCl of gas supply source 20e supplies4Gas adjusts flow by flow controller 21e, via valve 22e and gas supply pipe 23
It is supplied to from gas introduction port 15 in process container 11.
Antenna 13 is made up of the ring-type or spiral helicine wire configured along the upper surface of window component 14, via adaptation 25
It is connected with high frequency electric source 26.The high frequency power supply of assigned frequency to antenna 13 is passed through and flowed in antenna 13 by high frequency electric source 26
Dynamic high frequency electric, magnetic field is produced in the inside of process container 11 across window component 14.Caused by process container 11
Magnetic field, induction field is produced in process container 11, accelerates the electronics in process container 11 by the induction field.Then,
By the electronics that induction field accelerates and the molecule, the atomic collision that import the gas in process container 11, produced in process container 11
Raw inductively coupled plasma.
In film formation device 10 in the present embodiment, in the case of the cushion stated after its formation, to process container 11
Interior supply SiF4Gas, O2Gas and H2O gases, from the mixed gas of the gas of supply, generated by inductively coupled plasma
Cation, free radical.Then, using the cation of generation, free radical, by the chemical reaction on substrate S, it is being placed in mounting
Cushion is formed on the substrate S of platform 12.In the present embodiment, cushion is silica (SiO) film.Cushion is diaphragm
One example.
In addition, in film formation device 10 in the present embodiment, in the case of forming passivation layer described later, to process container
Supply SiF in 114Gas, SiCl4Gas and N2Gas, using the mixed gas of the gas of supply, pass through inductive couple plasma
Body generation cation, free radical.Then, using the cation of generation, free radical, by the chemical reaction on substrate S, loading
In forming passivation layer on the substrate S of mounting table 12.In the present embodiment, passivation layer is SiN film.
In addition, in the film forming of passivation layer, Ar gases can also be added, although Ar gases do not directly constitute SiN film
Material gas, but can play as the SiF for the material gas for directly constituting SiN film4Gas, SiCl4Gas and N2Gas
Adjust to appropriate concentration and make it possible to easily carry out being used to generate inductively coupled plasma electric discharge etc. in film process
In booster action.
In addition, in the present embodiment, utilize SiF4Gas, SiCl4And N2The plasma of the mixed gas of gas is formed
Passivation layer, still, processing gas not limited to this used in the film forming of passivation layer.It is, for example, possible to use SiF4Gas or
SiCl4Any gas and N of gas2The mixed gas of gas, O can be used2Gas instead N2Gas.Using O2Gas replaces
For N2In the case of gas, SiO films are formed as passivation layer.
Film formation device 10 includes the controller 27 of the action in each portion of control film formation device 10.The row of control respectively of controller 27
Device of air 17, flow controller 21a~21e, valve 22a~22e and high frequency electric source 26.Controller 27 is for example by with ASIC
(Application Specific Integrated Circuit, application specific integrated circuit), CPU (Central Processing
Unit, central processing unit) etc. various integrated circuits, the computer of electronic circuit etc. realizes.
[TFT30 composition]
Fig. 2 is the sectional view of an example of the composition for representing TFT30.TFT30 in the present embodiment is bottom gate type.
Such as shown in Fig. 2 TFT30 includes：Form the priming coat 31 on substrate S；In the upper part shape of priming coat 31
Into gate electrode 32；With the gate insulator 33 formed in a manner of covering priming coat 31 and gate electrode 32.In this implementation
In mode, SiO films, SiN film can be for example used as priming coat 31 and gate insulator 33.
In addition, for example as shown in Fig. 2 TFT30 includes：On gate insulator 33 with configure in gate electrode 32 just
The raceway groove 34 that the mode of top is formed；With the source electrode 35 of both sides that raceway groove 34 is respectively formed on gate insulator 33
With drain electrode 36.In the present embodiment, raceway groove 34 is oxide semiconductor.In the present embodiment, raceway groove 34 can make
By the use of being for example used as the so-called IGZO of the oxide semiconductor formed by indium (In), gallium (Ga), zinc (Zn).In addition, the material of raceway groove 34
As long as expecting oxide semiconductor, IGZO is not limited to.In the present embodiment, gate electrode 32, source electrode 35 and leakage
Pole electrode 36 is formed by the material containing Cu.Gate electrode 32, source electrode 35 and drain electrode 36 are as by containing Cu
One example in the Cu portions for the structure that material is formed.
In addition, for example as shown in Fig. 2 TFT30 includes：To cover raceway groove 34, source electrode on gate insulator 33
35 and the cushion 37 that is formed of mode of drain electrode 36；With passivation layer 38 of the formation on cushion 37.Cushion 37 into
Film method is illustrated later.
In the present embodiment, passivation layer 38 is, for example, to use SiF4The silicon fluoride gas and N of gas etc.2Gas etc. is no
The SiN film that nitrogenous gas containing H atom is formed.Nitrogenous gas of the passivation layer 38 using silicon fluoride gas and without H atom is formed,
Therefore, it is possible to reduce the content of the H atom in the SiN film after film forming.Thereby, it is possible to the spy of raceway groove 34 caused by suppressing H atom
Property deterioration.
Here, not sandwiched cushion 37, uses SiF4Gas and N2The plasma of the mixed gas of gas, to cover ditch
When the mode in road 34, source electrode 35 and drain electrode 36 forms passivation layer 38, during film forming, SiF4 gases are included
F atom reacted with the Cu atoms in source electrode 35 and drain electrode 36.Thus, in the source electrode contacted with passivation layer 38
Discoloration, burn into expansion etc. occur for the surface of electrode 35 and drain electrode 36.Thus, source electrode 35 and drain electrode 36 sometimes
Reduced with the adaptation of passivation layer 38, or the resistance of source electrode 35 and drain electrode 36 changes, the spy with TFT30
The situation that property deteriorates.
In order to prevent the above situation, in the TFT30 of present embodiment, such as shown in Fig. 2 in raceway groove 34, source electrode electricity
Formed with cushion 37 between pole 35 and drain electrode 36 and passivation layer 38.In the present embodiment, cushion 37 uses SiF4
Gas, O2Gas and H2The plasma of the mixed gas of O gases carries out film forming.
In the film forming of cushion 37, in SiF4Gas and O2H is added in gas2O gases.Thus, in the mistake of film process
Following reaction equations occurs in journey, unnecessary F atom forms hydrogen fluoride (HF) gas, is vented by exhaust apparatus 17.
SiF4+2H2O→SiO2+4HF
In addition, use SiH4Gas instead H2O gases can also obtain identical effect.
SiF4+SiH4+2O2→2SiO2+4HF
Thus, it is anti-with the Cu atoms on source electrode 35 and the surface of drain electrode 36 in the film forming procedure of cushion 37
The F atom answered is reduced.Thus, the Cu atoms on the surface of source electrode 35 and drain electrode 36 and the F atom in plasma
Reaction is suppressed, and the rotten of the surface of source electrode 35 and drain electrode 36 is suppressed.
In addition, in the cushion 37 being formed on source electrode 35 and drain electrode 36, a part of F atom is brilliant with forming
The atom of lattice combines, still, by SiF4Gas and O2H is added in gas2O, it can reduce and excessively contain in cushion 37
, not with forming the F atom that is combined of atom of lattice.Move and reach in cushion 37 thereby, it is possible to reduce after film forming
The F atom on the surface of source electrode 35 and drain electrode 36.Therefore, it is possible to suppress the surface of source electrode 35 and drain electrode 36
It is rotten.
In addition, in the film forming of passivation layer 38, without using H2O gases.Therefore, compared with cushion 37, in passivation layer 38
Inside more contain F atom.Cushion 37 hinders caused F free radicals, F ion in the film forming of passivation layer 38 to reach source electrode electricity
Pole 35 and the surface of drain electrode 36, also function to the effect on the surface of protection source electrode 35 and drain electrode 36.In passivation layer
After 38 film forming, in order that the F atom that lattice out of passivation layer 38 departs from does not reach source electrode 35 and drain electrode 36
Surface, the thickness of cushion 37 is preferably more than 10nm.
In addition, cushion 37 uses H2O gas film forming, it is therefore, micro in cushion 37 to contain H atom.Cushion 37
Interior H atom has an impact to the deterioration in characteristics of raceway groove 34, and therefore, the not preferred lamination of cushion 37 obtains too thick.Therefore, cushion
37 is thinner than passivation layer 38, for example formed as below 50nm thickness.So cushion 37 be preferably formed into more than 10nm 50nm with
Under scope in thickness.
[film formation step]
Fig. 3 is the flow chart of an example of the film formation step for representing cushion 37 and passivation layer 38.Fig. 4 is to be used to illustrate
The sectional view of one example of the film forming procedure of cushion 37 and passivation layer 38.Flow chart shown in Fig. 3 passes through according to regulation
Program makes controller 27 control the action in each portion of film formation device 10 to perform.Flow chart shown in Fig. 3 be shown as film method and
One example of TFT30 manufacture method.
First, open gate valve 16, such as shown in Fig. 4 (A), will be formed with gate electrode 32, raceway groove 34, source electrode 35
Moved into the substrate S of drain electrode 36 in process container 11 (S100).In the substrate S being moved in process container 11, raceway groove
34th, source electrode 35 and drain electrode 36 expose.After substrate S is moved into process container 11, closing gate valve 16.In addition, can
Think the substrate by a part of the process formed with gate electrode 32, raceway groove 34, source electrode 35 and drain electrode 36.
Then, into process container 11, by SiF4Gas, O2Gas and H2O gases are supplied everywhere with defined flow respectively
Manage in container 11 (S101).Specifically, relief valve 22a~22c, gas supply source 20a will be come from by flow controller 21a
SiF4Gas control is defined flow, by flow controller 21b by the O from gas supply source 20b2Gas controls
Defined flow, by flow controller 21c by the H from gas supply source 20c2The control of O gases is defined flow.By
This, SiF4Gas, O2Gas and H2The mixed gas that O gases are mixed with defined flow respectively is fed into process container 11.
Now, valve 22d and 22e are closed.Step S101 is an example of the first supplying step.
Then, the internal control of process container 11 is made as defined pressure using exhaust apparatus 17, by high frequency electric source 26 via
Adaptation 25 supplies the RF power of defined size to antenna 13.Thus, induction field, generation are produced in process container 11
SiF4Gas, O2Gas and H2The plasma (S102) of the mixed gas of O gases.Then, using contained by plasma sun from
Son, free radical, the cushion 37 as SiO films are stacked in raceway groove 34, on source electrode 35 and drain electrode 36 (S103).By
This, such as shown in Fig. 4 (B), formed with defined thickness (such as 10 on raceway groove 34, source electrode 35 and drain electrode 36
~50nm) cushion 37.Step S103 is an example of the first film formation step.
Here, the main membrance casting condition of the cushion 37 in present embodiment is for example as described below.
Pressure in process container 11：10mT
RF power：1.49W/cm2
The frequency of RF power：13.56MHz
Flow-rate ratio：SiF4/O2/H2O=20/1300/120sccm
Substrate S temperature：200℃
Then, shutoff valve 22a~22c, by exhaust apparatus 17 by the gas exhaust (S104) in process container 11.So
Afterwards, into process container 11 by SiF4Gas, SiCl4Gas and N2Gas is supplied to process container 11 with defined flow respectively
Interior (S105).Specifically, valve 22a, valve 22d and valve 22e are opened, gas supply source will be come from by flow controller 21a
20a SiF4Gas control is defined flow, by flow controller 21d by the N from gas supply source 20d2Gas controls
For defined flow, by flow controller 21e by the SiCl from gas supply source 20e4Gas control is defined flow.
Thus, SiF4Gas, SiCl4Gas and N2The mixed gas that gas is mixed with defined flow respectively is supplied to process container 11
It is interior.Step S105 is an example of the second supplying step.
Then, the internal control of process container 11 is made as defined pressure using exhaust apparatus 17, by high frequency electric source 26 via
Adaptation 25 supplies the RF power of defined size to antenna 13.Thus, induction field, generation are produced in process container 11
SiF4Gas, SiCl4Gas and N2The plasma (S106) of the mixed gas of gas.Then, the sun contained by plasma is utilized
Ion, free radical, the passivation layer 38 as SiN film are stacked on cushion 37 (S107).Thus, such as shown in Fig. 4 (C),
In the passivation layer 38 of thickness (such as tens~hundreds of nm) as defined in the superimposed layer of cushion 37.Step S107 is the second film formation step
An example.
Here, the main membrance casting condition of the passivation layer 38 in present embodiment is for example as described below.
Pressure in process container 11：10mT
RF power：2.23W/cm2
The frequency of RF power：13.56MHz
Flow-rate ratio：SiF4/SiCl4/N2=50/50/1500sccm
Substrate S temperature：200℃
Then, shutoff valve 22a, valve 22d and valve 22e, by exhaust apparatus 17 by the gas exhaust in process container 11
(S108).Then, open gate valve 16, the substrate S formed with cushion 37 and passivation layer 38 take out of out of process container 11
(S109)。
[composition of cushion 37]
Here, the measurement result of the composition of cushion 37 is illustrated.Fig. 5 represents to utilize RBS/HFS methods measure diaphragm
The figure of the result of atom composition percentage.In addition, RBS is Rutherford Backscattering Spectrometry (Lu
Plucked instrument good fortune back scattering energy spectrum analysis) abbreviation, HFS is Hydrogen Forward Scattering Spectrometry (before hydrogen
To scattering energy spectrum analyze) abbreviation.Fig. 5 (A) represents the measurement result of the atom composition percentage of the diaphragm in comparative example, figure
5 (B) represent the measurement result of the atom composition percentage of the diaphragm (cushion 37) in present embodiment.Guarantor in comparative example
Cuticula is except the mixed gas in film forming is free of H2O gases this point outside, by with present embodiment identical condition shape
Into film.
As shown in Fig. 5 (A), in the diaphragm of comparative example, silicon (Si) atom, O atom and F atom respectively containing 32%,
59% and 9%, and be free of H atom.The feelings being stacked in the diaphragm for making comparative example on source electrode 35 and drain electrode 36
Under condition, using plasma in film forming caused F free radicals, F ion and the surface of source electrode 35 and drain electrode 36
Cu atomic reactions.Thus, the surface of source electrode 35 and drain electrode 36 occurs rotten.In addition, in the diaphragm of comparative example,
H is free of in material gas2O gases, therefore, H atom is not present in diaphragm.
On the other hand, in the cushion 37 of present embodiment, as shown in Fig. 5 (B), Si atoms, O atom, F atom and H
Atom contains 32%, 63%, 4% and 1% respectively.In the present embodiment, H is free of in the mixed gas in film forming2O gas
Body, therefore, in film forming, F atom is discharged as HF gases.Therefore, it is possible to not occur due to utilizing plasma in film forming
The change quality on the surface of source electrode 35 and drain electrode 36 caused by caused residual F free radical, F ion carries out film forming.Separately
Outside, the ratio of contained F atom is low in the cushion 37 formed here, TFT characteristics caused by can suppressing rheological parameters' change with time
Deterioration.
In addition, containing H atom in the cushion 37 of present embodiment, but it is less than 1%, it is considerably less.Therefore, lamination
Cushion 37 on the raceway groove 34 as oxide semiconductor contacts with raceway groove 34, still, contained H atom in cushion 37
On influenceing to terminate in acceptable scope in TFT characteristics caused by raceway groove 34.
[comparison of film-forming state]
Fig. 6 is the figure of an example of the film-forming state for the diaphragm for representing used every kind of mixed gas.Fig. 6's
In example, the state for the diaphragm to be formed on the Cu electrodes of cone-shaped is represented as schematic diagram.
Mixed gas when as film forming uses SiF4Gas/O2Gas or SiF4Gas/SiCl4Gas/O2Gas
In the case of, form SiO films as diaphragm on Cu electrodes.Such as shown in fig. 6, the SiO films formed on Cu electrodes exist
Growth is in the form of a column on Cu electrodes, film quality is poor.In addition, also produce the rotten of the surface of Cu electrodes.
Mixed gas when as film forming uses SiF4 gases/N2In the case of gas, as protection on Cu electrodes
Film forms SiN film.Such as shown in fig. 6, the SiN film formed on Cu electrodes deteriorates in the tapered portion film quality of Cu electrodes.
Mixed gas when as film forming uses SiF4Gas/SiCl4Gas/N2In the case of gas, on Cu electrodes
SiN film is formed as diaphragm.Such as shown in fig. 6, the SiN film formed on Cu electrodes Cu electrodes tapered portion Cu electrodes
Expansion, larger infringement is produced to Cu electrodes.
On the other hand, as in the present embodiment, mixed gas when as film forming uses SiF4/O2/H2O gases
In the case of, form SiO films as diaphragm (cushion 37) on Cu electrodes.Such as shown in fig. 6, formed on Cu electrodes
SiO films do not produce the infringement of discoloration, burn into expansion etc. in the flat part and tapered portion of Cu electrodes, in Cu electrodes, SiO films
Film quality is also good.
As shown in fig. 6, in the combination of gas in a comparative example, in any combination, the protection of film forming on Cu electrodes
The film quality of film is poor, or produces the rotten of Cu electrodes.On the other hand, can in the combination of the gas of present embodiment
Cu electrodes is gone bad, good SiO films are formed on Cu electrodes.
More than, the embodiment of film build method and TFT manufacture method is illustrated.Can be with bright by described above
Really：According to the manufacture method of the film build method of present embodiment and TFT, the content of the H atom in diaphragm can be reduced, and
Diaphragm is normally formed on the electrode being made up of Cu.
[other]
Additionally, this invention is not limited to above-mentioned embodiment, and various modifications can be carried out in the range of its purport.
For example, in TFT30 in the above-described embodiment, such as shown in Fig. 2 to cover priming coat 31 and grid electricity
The mode stacked gate insulating barrier 33 of pole 32, formed with the raceway groove being made up of oxide semiconductor on gate insulator 33
34.Moreover, raceway groove 34 is in its lower surface and the upper surface of gate insulator 33.It is therefore preferable that the H of gate insulator 33 is former
The content of son is few.Silicon fluoride gas and O of the poor silicon oxide film of H atom such as can use SiF4 gases2Gas
Deng oxygen-containing gas without H atom carry out film forming.
But the gas containing F atom can be used in the film forming of gate insulator 33, therefore, in gate insulator 33
Film forming when, sometimes due to the F atom contained by processing gas, the surface of gate electrode 32 occurs rotten.Thus, for example, it is preferred to
TFT30a as shown in Figure 7 is such, the lamination cushion 37a between gate insulator 33 and priming coat 31 and gate electrode 32.
Fig. 7 is the sectional view of another of the construction for representing TFT.Cushion 37a with above-mentioned embodiment film forming under the same conditions.
Thus, during gate insulator 33 is formed, can suppress due to gate electrode caused by the F atom contained by processing gas
32 it is rotten.
In addition, in the example shown in Fig. 2 and Fig. 7, formed with the source electrode electricity being made up of Cu on gate insulator 33
The lower surface of pole 35 and drain electrode 36, source electrode 35 and drain electrode 36 and the upper surface of gate insulator 33.Cause
This, in the case of the F atom not combined with forming the atom of lattice in gate insulator 33 being present, sometimes due to the F atom
And it is rotten that the lower surface of source electrode 35 and drain electrode 36 occurs.Therefore, source electrode is formed on gate insulator 33
35 and drain electrode 36 before, preferably in the upper surface entirety of gate insulator 33 or the upper surface of gate insulator 33,
The also lamination cushion 37a in the region of configuration source electrode 35 and drain electrode 36.Thereby, it is possible to suppress the He of source electrode 35
Go bad the lower surface of drain electrode 36.
In addition, in the above-described embodiment, it is illustrated by taking the TFT of bottom gate type as an example, still, in the TFT of top gate type
In, it can also apply the present invention.Fig. 8 is the sectional view of an example of the composition for the TFT40 for representing top gate type.
Such as shown in figure 8, TFT40 includes：Form the priming coat 41 on substrate S；Part is formed in priming coat 41
On source electrode 43 and drain electrode 44；And the raceway groove 42 formed between source electrode 43 and drain electrode 44.Primary coat
Layer 41 is, for example, SiO films, SiN film.Raceway groove 42 is IGZO etc. oxide semiconductor.Source electrode 43 and drain electrode 44 are for example
Formed by the material containing Cu.
In addition, for example as shown in figure 8, TFT40 includes：To cover the side of raceway groove 42, source electrode 43 and drain electrode 44
The cushion 45 that formula is formed on raceway groove 42, source electrode 43 and drain electrode 44；With grid of the formation on cushion 45
Pole insulating barrier 46.Cushion 45 is the SiO films formed under the same conditions in the cushion 37 with above-mentioned embodiment.Grid
Insulating barrier 46 is, for example, SiO films, SiN film.
In addition, for example as shown in figure 8, TFT40 includes：To be configured across cushion 45 and gate insulator 46 in raceway groove 42
Surface the gate electrode 47 that is formed of mode；The buffering formed in a manner of covering gate insulator 46 and gate electrode 47
Layer 49；With passivation layer 48 of the formation on cushion 49.Gate electrode 47 is for example formed by the material containing Cu.So in grid
Formed with cushion 49 between pole electrode 47 and passivation layer 48.Passivation layer 48 is, for example, SiO films, SiN film.
As described above, in the TFT40 of top gate type, in raceway groove 42, source electrode 43 and drain electrode 44 and gate insulator
Cushion 45 is set between layer 46, thereby, it is possible to cover raceway groove 42 using the low diaphragm of H atom content, further, it is possible to by
Diaphragm is normally formed on the source electrode 43 and drain electrode 44 that Cu is formed.
In addition, in the above-described embodiment, to form source electrode, drain electrode or gate electrode Cu portions it
The upper situation for forming cushion is illustrated, and still, the invention is not restricted to this, and the Cu portions formed with cushion are except being electrode
Outside in addition, it can be distribution, form the part of other key elements.
In addition, in the above-described embodiment, the situation for handling single TFT is illustrated, but it is also possible to together
When processing positioned at different layers multiple TFT.For example, in the film process of cushion once, can be in TFT source
The gate electrode of pole electrode and drain electrode and other TFT forms cushion simultaneously.
In addition, in the above-described embodiment, as first gas with SiF4Deng silicon fluoride gas exemplified by said
It is bright, but the invention is not restricted to this.First gas is the gas of the silicon systems of halogen atom-containing, for example, can be SiCl4Deng
Silicon chloride gas, SiBr4Deng silicon bromide gas, SiI4Deng iodate silicon gas etc..
In addition, in the above-described embodiment, be illustrated as second gas by taking O2 gases as an example, but it is of the invention
Not limited to this.Second gas is except O2N can be used outside gas2O gases, N2Gas or rare gas etc..As rare gas
Body, such as helium (He), neon (Ne), argon (Ar), krypton (Kr) etc. can be used.
In addition, in the above-described embodiment, as third gas with H2It is illustrated exemplified by O gases, but this hair
Bright not limited to this.Third gas for example can be SiH4Gas etc..
In addition, in the above-described embodiment, to be entered as plasma source using the CVD of inductively coupled plasma
It is illustrated exemplified by the film formation device 10 of row film forming, but the invention is not restricted to this.As long as utilize using plasma
CVD carries out the film formation device 10 of film forming, and plasma source is not limited to inductively coupled plasma, such as can use electricity
Hold the arbitrary plasma sources such as coupled plasma, microwave plasma, magnetron plasma.
In addition, the film build method in above-mentioned embodiment is for example by making controller 27 perform for realizing the film forming side
The program of method is realized.For realizing the program of film build method for example by DVD (Digital Versatile Disc), PD
The optical record medium of (Phase change rewritable Disk) etc., MO (Magneto-Optical disk) etc. light
The storage medium of magnetic recording media, tape-shaped medium, magnetic recording media or semiconductor memory etc. provides.Controller 27 from this
Storage medium reading program, the program of the reading is performed, thus control each portion of film formation device 10, realize in above-mentioned embodiment
Film build method.In addition, controller 27 can be by for realizing the program of film build method from the server for storing the program etc.
Other devices, the program is obtained via communication media to perform.
Claims (8)
- A kind of 1. film build method, it is characterised in that including：Moved step, the substrate that Cu portions expose is moved into process container, wherein, Cu portions are the construction formed by the material containing Cu Thing；First supplying step, first gas, second gas and third gas are supplied into process container；WithFirst film formation step, using be supplied to it is in the process container, containing the first gas, the second gas and institute The plasma of the mixed gas of third gas is stated, diaphragm is formed in the Cu portions,The first gas is the silane-based gas is of halogen atom-containing,The second gas is O2Gas, N2O gases, N2Gas or rare gas,The third gas is H2O gases or SiH4Gas.
- 2. film build method as claimed in claim 1, it is characterised in that：The first gas is SiF4Gas,The second gas is O2Gas,The third gas is H2O gases.
- 3. film build method as claimed in claim 1 or 2, it is characterised in that：The diaphragm is the thickness in more than 10nm below 50nm scope.
- 4. the film build method as described in any one of claims 1 to 3, it is characterised in that：Exposing on the substrate has oxide semiconductor,In first film formation step, the diaphragm is formed in the Cu portions and the oxide semiconductor.
- 5. film build method as claimed in claim 4, it is characterised in that：The oxide semiconductor forms TFT raceway groove.
- 6. the film build method as described in any one of Claims 1 to 5, it is characterised in that：It is at least one in source electrode, drain electrode and gate electrode that the Cu portions exposed on the substrate are TFT.
- 7. the film build method as described in any one of claim 1~6, it is characterised in that also include：Second supplying step, silicon chloride gas or silicon fluoride gas or their gaseous mixture are supplied into the process container Body and oxygen-containing gas or nitrogenous gas not comprising hydrogen atom；WithSecond film formation step, using be supplied in the process container, described silicon chloride gas or the silicon fluoride gas or The plasma of their mixed gas of person and the mixed gas containing the oxygen-containing gas or the nitrogenous gas, described Silicon oxide film or silicon nitride film are formed on diaphragm.
- A kind of 8. TFT manufacture method, it is characterised in that including：Moved step, moves into substrate into process container, the substrate be configured with the source electrode that is formed by the material containing Cu and Drain electrode, the source electrode and the drain electrode and between be configured with oxide semiconductor, the source electrode, institute State drain electrode and the oxide semiconductor exposes；Supplying step, first gas, second gas and third gas are supplied into the process container；WithFilm formation step, using be supplied to it is in the process container, containing the first gas, the second gas and described The plasma of the mixed gas of three gases, the shape on the source electrode, the drain electrode and the oxide semiconductor Into diaphragm,The first gas is the silane-based gas is of halogen atom-containing,The second gas is O2Gas, N2O gases, N2Gas or rare gas,The third gas is H2O gases or SiH4Gas.
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| JP2016-121042 | 2016-06-17 | ||
| JP2016121042A JP6689140B2 (en) | 2016-06-17 | 2016-06-17 | Film forming method and TFT manufacturing method |
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| CN107523800B CN107523800B (en) | 2020-01-03 |
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| JP (1) | JP6689140B2 (en) |
| KR (1) | KR102009078B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429024A (en) * | 2019-08-08 | 2019-11-08 | 京东方科技集团股份有限公司 | The preparation method of interlayer insulating film and thin film transistor (TFT) |
| CN110944443A (en) * | 2018-09-25 | 2020-03-31 | 等离子体成膜有限公司 | Plasma processing apparatus and method of driving the same |
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| KR102217171B1 (en) * | 2018-07-30 | 2021-02-17 | 도쿄엘렉트론가부시키가이샤 | Film-forming method and film-forming apparatus |
| JP7130548B2 (en) * | 2018-07-30 | 2022-09-05 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
| JP2020064924A (en) * | 2018-10-16 | 2020-04-23 | 東京エレクトロン株式会社 | Method of forming nitride film and method of manufacturing semiconductor device |
| CN114008743A (en) * | 2019-06-17 | 2022-02-01 | 应用材料公司 | Method for forming thin film transistor |
| JP7246284B2 (en) * | 2019-08-15 | 2023-03-27 | 東京エレクトロン株式会社 | Deposition method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020133258A1 (en) * | 2001-01-12 | 2002-09-19 | Applied Materials. Inc. | Nitrogen doping of FSG layer |
| CN103098185A (en) * | 2010-08-20 | 2013-05-08 | 应用材料公司 | Methods for forming a hydrogen free silicon containing dielectric film |
| CN105144391A (en) * | 2013-03-01 | 2015-12-09 | 应用材料公司 | Metal oxide TFT stability improvement |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6204917B2 (en) * | 2011-10-07 | 2017-09-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Method for depositing silicon-containing layers by argon gas dilution |
| JP6232219B2 (en) | 2013-06-28 | 2017-11-15 | 東京エレクトロン株式会社 | Method for forming multilayer protective film |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020133258A1 (en) * | 2001-01-12 | 2002-09-19 | Applied Materials. Inc. | Nitrogen doping of FSG layer |
| CN103098185A (en) * | 2010-08-20 | 2013-05-08 | 应用材料公司 | Methods for forming a hydrogen free silicon containing dielectric film |
| CN105144391A (en) * | 2013-03-01 | 2015-12-09 | 应用材料公司 | Metal oxide TFT stability improvement |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110944443A (en) * | 2018-09-25 | 2020-03-31 | 等离子体成膜有限公司 | Plasma processing apparatus and method of driving the same |
| US11164728B2 (en) | 2018-09-25 | 2021-11-02 | Plasma Ion Assist Co., Ltd. | Plasma treatment apparatus and driving method thereof |
| CN110429024A (en) * | 2019-08-08 | 2019-11-08 | 京东方科技集团股份有限公司 | The preparation method of interlayer insulating film and thin film transistor (TFT) |
| US11430816B2 (en) | 2019-08-08 | 2022-08-30 | Boe Technology Group Co., Ltd. | Method for preparing interlayer insulating layer and method for manufacturing thin film transistor, thin film transistor |
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| JP2017224789A (en) | 2017-12-21 |
| TW201807754A (en) | 2018-03-01 |
| JP6689140B2 (en) | 2020-04-28 |
| CN107523800B (en) | 2020-01-03 |
| KR102009078B1 (en) | 2019-08-08 |
| TWI747910B (en) | 2021-12-01 |
| KR20170142899A (en) | 2017-12-28 |
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