TWI747856B - 混合式技術3d晶粒堆疊 - Google Patents
混合式技術3d晶粒堆疊 Download PDFInfo
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Abstract
實施例大體上係關於混合式技術3D晶粒堆疊。一種設備之一實施例包括:一TSV陣列基板,其包括貫穿矽通孔(TSV)及引線結合接觸體;一或多個引線結合晶粒之一堆疊體;以及一封裝體,其藉由一第一互連件與該TSV基板耦接,其中該一或多個引線結合晶粒經由一或多個引線連接至該TSV陣列基板之一或多個引線結合接觸體,且其中該TSV陣列基板提供用於該一或多個引線結合晶粒中之每一者的連接部。
Description
發明領域
本文所描述之實施例總體係關於電子裝置之領域,且更特定而言係關於混合式技術3D晶粒堆疊。
發明背景
在電子設備之製造中,因減小裝置實體空間之優點以及與組件之間減小的距離之優點,多個晶粒之堆疊已變得受歡迎。
然而,設備中不同類型的晶粒之組合可能在製造中需要某種複雜性及一些花費,且可導致產生不合期望地大的產品。
例如,引線結合技術晶粒與倒裝晶片技術晶粒之組合需要使用分開的封裝體,其中該等封裝體然後以封裝上封裝方式堆疊。因此,所得產品需要大量組件及互連件,且進一步導致僅在特定設計將需要引線結合及倒裝晶片晶粒兩者的情況下有用之不靈活的設計。
於本揭示的一個態樣中,係特地提供一種設
備,其包含:一TSV陣列基板,其包括多個貫穿矽通孔(TSV)及多個引線結合接觸體;一或多個引線結合晶粒之一堆疊體;以及一封裝體,該封裝體之一第一側藉由一第一互連件與該TSV陣列基板耦接;其中該一或多個引線結合晶粒經由一或多個引線連接至該TSV陣列基板之一或多個引線結合接觸體;以及其中該TSV陣列基板提供用於該一或多個引線結合晶粒中之每一者的連接部。
100、200、300、700:設備
110:引線結合晶粒或引線結合晶粒堆疊體/引線結合晶粒或晶粒堆疊體
115、215、315、415、515:引線
120、220、520、616:倒裝晶片晶粒
125、225、325、525:引線結合墊
130:貫穿矽通孔格柵/TSV陣列基板/TSV格柵
140、340、440、540:封裝體
210:引線結合晶粒堆疊體
240:頂部封裝體/第一封裝體
250:第二封裝體/底部封裝體
310:引線結合晶粒堆疊體/引線結合堆疊體/引線結合晶粒
320:倒裝晶片晶粒/倒裝晶片
322:接觸體
330:TSV陣列基板/TSV格柵/TSV陣列
335、435、535:第一層互連件
345、445、545:第二層互連件
410、510、512:引線結合晶粒堆疊體/引線結合晶粒
425:引線結合接觸墊/引線結合墊
430、530:TSV陣列基板/TSV格柵
610、620~650:製程流程
612、614:引線結合晶粒
618:TSV晶圓
710:處理器
715:主記憶體
720:非依電性記憶體(NVM)
725:固體狀態驅動機(SSD)
730:唯讀記憶體(ROM)730
740:發射器或接收器
742:埠
744:天線
760:電源
765:匯流排
在隨附圖式之諸圖中以實例之方式而非以限制之方式例示在此所述之實施例,在隨附圖式中相同元件符號代表類似元件。
圖1為根據實施例之混合式倒裝晶片及引線結合設備之例示;圖2為包括倒裝晶片及引線結合連接部之封裝上封裝設備之例示;圖3為根據實施例之混合式倒裝晶片及引線結合設備之例示;圖4為根據實施例之引線結合堆疊設備之例示;圖5為根據實施例之倒裝晶片及引線結合設備之例示;圖6例示用於混合式晶粒設備之製造的製程流程;以及圖7為根據實施例之包括混合式晶粒設備之行動裝置的例示。
詳細說明
本文所述之實施例大體上係關於混合式技術3D晶粒堆疊。
鑒於此描述之目的:「行動電子裝置」或「行動裝置」指代智慧型電話、智慧型手錶、平板電腦、筆記型電腦或膝上型電腦、手持式電腦、行動網際網路裝置、可佩帶技術或包括處理能力之其他行動電子裝置。
「倒裝晶片」或「倒裝晶片裝置」指代在晶圓頂側上包括接觸體(其可具體而言為微凸塊接觸體)之半導體裝置,其中該等接觸體允許裝置翻轉過來(反轉),以使得頂側向下面向,以與另一元件之接觸體對準及附接,該另一元件諸如晶圓或基板,其中該附接可包括:焊料經回流以完成該互連。
「引線結合」指代此種製程:將引線結合晶片安裝在直立(非反轉)佈置中;以及使用引線以將引線結合晶片之晶片墊互連至另一元件,諸如互連至晶圓或基板上之引線結合接觸體。
「封裝上封裝」或「PoP」指代多個封裝體可藉由其互連於垂直堆疊體中之積體電路封裝。
「貫穿矽通孔」或「TSV」指代穿過矽晶圓或基板之垂直(垂直於表面)電連接(或通孔)。
「基板」或「晶圓」指代一片物質,包括一片半導體
材料,諸如矽,該物質在電子設備中使用以用於積體電路之製造,以及在光電設備中使用以用於基於晶圓的太陽能電池。
在一些實施例中,設備、系統或製程使用混合式技術3D晶粒堆疊以用於一種裝置,該裝置包括用於堆疊體中之一或多個晶粒的引線結合連接部,其中用於一或多個晶粒之連接部經由全或部分格柵TSV(貫穿矽通孔)陣列基板而提供。在一些實施例中,設備、系統或製程提供用於混合式裝置,且進一步包括用於堆疊體中之底部晶粒的倒裝晶片結合墊,該混合式裝置包括用於堆疊體中之一或多個晶粒的兩個引線結合連接部,其中該等連接部經由全或部分格柵TSV(貫穿矽通孔)陣列基板被賦能。
如在此所使用的,全格柵TSV陣列基板指代此種基板,其中TSV之陣列經由基板中之全部或大部分提供,而部分格柵陣列基板指代此種基板,其中TSV之陣列經由基板之一部分提供。在一些實施例中,用於設備之連接部為用於倒裝晶片晶粒之倒裝晶片連接部與用於在底部晶粒頂部上堆疊的一或多個晶粒之引線結合連接部的混合式組合,其中倒裝晶片晶粒為堆疊體中之底部晶粒。TSV可經利用來連接裝置或電路系統,其中TSV將矽之前側中的金屬層互連至矽之後側上的墊或微凸塊,從而賦能於矽之後側上的一組互連件。矽之後側上的該組互連件通常藉由矽之後側上的額外路由安排/再分配層來實施。
在一些實施例中,設備、系統或製程賦能於
全或部分格柵TSV陣列基板上之引線結合連接。在一些實施例中,設備、系統或製程經由覆蓋基板中之全部或一部分的全或部分格柵TSV陣列基板而賦能於引線結合及倒裝晶片結合墊(位於堆疊體中之底部晶粒的後側上)兩者。
在一些實施例中,引線結合墊具有基於Al(鋁)的表面光度(諸如Ti(鈦)Al(鋁))或其他表面光度以賦能於引線結合。以此方式,倒裝晶片或引線結合類型兩者之後續晶粒可經堆疊併直接連接至底部晶粒。
在一些實施例中,設備、系統或製程消除用於引線結合晶粒之分開的封裝體之必要性,且因此不需要底部封裝體來包括封裝上封裝墊。此外,晶粒堆疊體中之底部晶粒可與其他晶粒直接通訊而無需經過封裝體,從而改良成本及效能兩者。在一些實施例中,設備、系統或製程消除對堆疊晶粒設備中之頂部封裝體的需要,進而簡化製造且降低電子裝置之產生中的成本。
在一些實施例中,設備、系統或製程包括引線結合連接層,從而允許用於倒裝晶片及引線結合連接之不同的耦接製程。在一些實施例中,該設備係用來賦能於引線結合及倒裝晶片結合墊兩者以用於經由TSV陣列基板之連接。
在一些實施例中,設備不限於任何特定數目的晶粒,而是可在堆疊體中包括多個引線結合晶粒,其中該堆疊體可亦用倒裝晶片晶粒堆疊。在一些實施例中,除藉由消除堆疊裝置中之頂部封裝體來降低製造成本及困難
之外,混合式倒裝晶片及引線結合設備可幫助減小封裝體之z高度。
圖1為根據實施例之混合式倒裝晶片及引線結合設備之例示。其他細節及變化例示於圖3至5。
在一些實施例中,設備100包括引線結合晶粒或引線結合晶粒堆疊體110,該引線結合晶粒或引線結合晶粒堆疊體110包括多個引線結合晶粒。在一些實施例中,引線結合晶粒或引線結合晶粒堆疊體110與貫穿矽通孔格柵130耦接。在其他實施例中,引線結合晶粒或引線結合晶粒堆疊體110與倒裝晶片晶粒120之第一側耦接。在一些實施例中,倒裝晶片晶粒120經翻轉(反轉),以使得反轉倒裝晶片晶粒120之較前頂側(第二側)與TSV陣列基板130之第一組TSV耦接,且引線結合晶粒或晶粒堆疊體110與反轉倒裝晶片晶粒120之最初的底側(第一側)耦接。
在一些實施例中,一組引線結合墊125連接至TSV格柵130,其中引線結合晶粒或晶粒堆疊體110藉由一或多個引線115連接至引線結合墊125。
圖2為包括倒裝晶片及引線結合連接部之封裝上封裝設備之例示。在習知封裝上封裝設備200中,設備包括頂部封裝體240及底部封裝體250。如所例示,第一封裝體包括引線結合晶粒堆疊體210,引線結合晶粒堆疊體210經由引線215連接至第一封裝體240之引線結合墊225。此外,第二封裝體250包括倒裝晶片晶粒220,倒裝晶片晶粒220經翻轉,以使得反轉倒裝晶片與第二封裝體
250之接觸體連接。
如所例示,在習知封裝上封裝技術中,倒裝晶片與引線結合堆疊晶粒產品之組合佈置需要用於引線結合晶粒及倒裝晶片晶粒之分開的封裝體,其中經由底部封裝體250上之封裝上封裝金屬層來進行引線結合晶粒與倒裝晶片晶粒之間的連接。設備200在晶粒之間需要複雜的互連,且進一步需要額外的高度來適應該兩個封裝體。
圖3為根據實施例之混合式倒裝晶片及引線結合設備之例示。在一些實施例中,如設備300包括引線結合晶粒堆疊體(包括引線結合晶粒之堆疊體)310,引線結合晶粒堆疊體310與倒裝晶片晶粒320之第一側耦接。在一些實施例中,倒裝晶片晶粒320經翻轉,以使得頂側(第二側)向下翻轉且藉由一組倒裝晶片微凸塊接觸體322與TSV陣列基板330之第一組TSV耦接。在此實行方案中,TSV陣列基板為全格柵TSV陣列基板。在一些實施例中,引線結合堆疊體320與反轉倒裝晶片晶粒310之最初的底側(第一側)耦接。
在一些實施例中,一組引線結合墊325連接至TSV格柵330,其中引線結合晶粒堆疊體310之每一晶粒藉由一或多個引線315連接至引線結合墊325中之某些者。
在一些實施例中,TSV陣列基板330藉由第一層互連件335與單個封裝體340連接,第一層互連件335提供用於引線結合晶粒310及倒裝晶片晶粒320中之每一者的連接性,其中封裝體進一步包括第二層互連件345以
用於系統中之設備300之連接。
圖4為根據實施例之引線結合堆疊設備之例示。在一些實施例中,如設備400包括引線結合晶粒堆疊體(包括引線結合晶粒之堆疊體)410,引線結合晶粒堆疊體410與部分格柵TSV陣列基板430耦接。在一些實施例中,TSV陣列基板430包括多個引線結合接觸墊425。在一些實施例中,一組引線結合墊425連接至TSV格柵430,其中引線結合晶粒堆疊體410之每一晶粒藉由一或多個引線415連接至引線結合接觸墊425中之某些者。雖然未例示於圖4中,但設備400可進一步包括一或多個倒裝晶片晶粒,該一或多個倒裝晶片晶粒以與如圖3所示的倒裝晶片320至TSV陣列330基板之連接相同的方式連接至TSV陣列基板430。此外,儘管此未例示於圖4中,但引線結合接觸墊425亦需要TSV基板之另一側上的金屬路由安排以便連接至TSV。
在一些實施例中,TSV陣列基板430藉由第一層互連件435與單個封裝體440連接,第一層互連件435提供用於引線結合晶粒410中之每一者的連接性,其中封裝體440進一步包括第二層互連件445以用於系統中之設備400之連接。
圖5為根據實施例之倒裝晶片及引線結合設備之例示。在一些實施例中,設備500包括:第一引線結合晶粒堆疊體,其包括一或多個引線結合晶粒510;以及第二引線結合晶粒堆疊體,其包括與倒裝晶片晶粒520之
第一側耦接之一或多個引線結合晶粒512。在一些實施例中,倒裝晶片晶粒520經翻轉,以使得頂側(第二側)向下翻轉且藉由一組倒裝晶片微凸塊接觸體與TSV陣列基板530之第一組TSV耦接。在此實行方案中,TSV陣列基板530為全格柵TSV陣列基板。在一些實施例中,引線結合晶粒510之第一堆疊體與TSV陣列基板530耦接,且第二組引線結合晶粒512與反轉倒裝晶片晶粒520之最初的底側(第一側)耦接。
在一些實施例中,一組引線結合墊525連接至TSV格柵530,其中第一引線結合晶粒堆疊體510及第二引線結合晶粒堆疊體512中之每一晶粒藉由一或多個引線515連接至引線結合墊525中之某些者。
在一些實施例中,TSV陣列基板530藉由第一層互連件535與單個封裝體540連接,第一層互連件535提供用於引線結合晶粒510-512及倒裝晶片晶粒520中之每一者的連接性,其中封裝體550進一步包括第二層互連件545以用於系統中之設備500之連接。
應注意,雖然出於易於例示之目的,TSV陣列基板530大體上展示為被動基板(在無諸如電晶體之主動組件的情況下),實施例不限於此例示。在實際實行方案中,TSV基板可在更加靠近第一層互連件535之處包括底部(第二或翻轉)側上之主動電晶體。
圖6例示用於混合式晶粒設備之製造的製程流程。在一些實施例中,該製程流程可包括:
610:晶圓製造-用於裝置之產品晶圓之製造,其在此情況下包括用於引線結合晶粒612-614、倒裝晶片晶粒616之晶圓及TSV晶圓618。
620:晶粒單分(singulation)-引線結合與倒裝晶片晶粒之單分,不包括具有TSV陣列基板之底部晶粒晶圓。
630:晶片至晶圓附接-倒裝晶片晶粒至底部晶粒(TSV陣列基板)之晶片至晶圓附接。含有引線結合墊之底部晶粒晶圓經受額外鍍覆或表面光製步驟以沉積TiAl(或其他材料)以賦能於引線結合,諸如銅墊上之結合。
640:附接及引線結合-引線結合晶粒利用晶粒後側膜附接在堆疊體中,且進一步引線結合至底部晶粒晶圓後側上之引線結合墊。
650:包覆模製及單分-在一些實施例中,整個組態封閉在模具中,且接著,最後的製程係用來將具有晶粒堆疊體之底部晶圓單分成個別單元。在一些實施例中,堆疊模製晶粒可然後附接至封裝體以獲得展示於例如圖3中之組態。
圖7為根據實施例之包括混合式晶粒設備之行動裝置的例示。在此例示中,未展示對於呈現描述並非具有密切關係的某些標準組件及熟知組件。展示為分開的元件之元件可經組合,包括例如將多個元件組合在單個晶片上之SoC(單晶片系統)。
在一些實施例中,設備700如圖1-5中之一或多者所示地經製造為混合式晶粒設備。
在一些實施例中,設備700包括諸如一或多個處理器710之處理構件,一或多個處理器710耦接至一或多個匯流排或互連件,通常展示為匯流排765。處理器710可包含一或多個實體處理器及一或多個邏輯處理器。在一些實施例中,處理器可包括一或多個一般用途處理器或特殊處理器處理器。匯流排765為用於發射資料之通訊構件。匯流排765為簡單起見例示為單個匯流排,但可表示多個不同的互連件或匯流排,且通向此類互連件的組件連接可變化。圖7中所示之匯流排765為表示由適當橋接器、適配器或控制器連接的任何一或多個分開的實體匯流排、點對點連接或兩者的抽象化。
在一些實施例中,設備700進一步包含隨機存取記憶體(RAM)或其他動態儲存裝置或元件作為主記憶體715以用於儲存資訊及將要由處理器710執行的指令。主記憶體715可包括但不限於動態隨機存取記憶體(DRAM)。
設備700亦可包含:非依電性記憶體(NVM)720;儲存裝置,諸如固體狀態驅動機(SSD)725;以及唯讀記憶體(ROM)730或用於儲存靜態資訊及用於處理器710之指令的其他靜態儲存裝置。
在一些實施例中,設備700包括耦接至匯流排765之一或多個發射器或接收器740以提供有線或無線通訊。在一些實施例中,行動裝置705可包括:一或多個天線744,諸如雙極天線或單極天線或兩者,用於使用無
線發射器、接收器經由無線通訊發射及接收資料;以及一或多個埠742,以用於經由有線通訊發射及接收資料。無線通訊包括但不限於Wi-Fi、藍牙TM、近場通訊及其他無線通訊標準。
設備700可亦包含電池或其他電源760,電池或其他電源760可包括太陽能電池、燃料電池、充電電容器、近場電感耦合或用於在設備700中提供或產生電力之其他系統或裝置。由電源760提供之電力可按照需要分配至設備700之元件。
在以上描述中,出於解釋之目的,闡明許多特定細節以便提供對所述實施例之徹底理解。然而,熟習此項技術者將明白,可在無此等特定細節中之一些的情況下實踐實施例。在其他情況下,以方塊圖形式展示熟知的結構及裝置。所例示之組件之間可存在中間結構。本文所述或例示之組件可具有未例示或描述的額外輸入或輸出。
各種實施例可包括各種製程。此等製程可由硬體組件進行或可體現於電腦程式或機器可執行指令中,該電腦程式或該等機器可執行指令可用來使以該等指令程式設計的一般用途處理器或特殊用途處理器或邏輯電路進行該等製程。或者,該等製程可由硬體及軟體之組合進行。
各種實施例中的部分可提供為電腦程式產品,該電腦程式產品可包括電腦可讀媒體,該電腦可讀媒體上儲存有電腦程式指令,該等電腦程式指令可用來程式設計電腦(或其他電子裝置)以用於由一或多個處理器執行
來進行根據某些實施例的製程。電腦可讀媒體可包括但不限於磁碟片、光碟片、唯讀光碟片記憶體(CD-ROM)及磁光碟片、唯讀記憶體(ROM)、隨機存取記憶體(RAM)、可抹除可規劃唯讀記憶體(EPROM)、電氣可抹除可規劃唯讀記憶體(EEPROM)、磁卡或光卡、快閃記憶體或適合於儲存電子指令的其他類型之電腦可讀媒體。此外,實施例可亦下載為電腦程式產品,其中程式可自遠端電腦傳遞至請求電腦。
方法中之許多係以其最基本的形式被描述,但在不脫離本實施例之基本範疇的情況下,可將製程增添至方法中之任一者或自方法中之任一者刪除,且可將資訊增添至所述訊息中之任一者或自所述訊息中任一者減去。熟習此項技術者將明白,可進行許多進一步修改及調適。特定實施例並非提供來限制概念而是提供來例示概念。實施例之範疇將並非由以上提供的特定實例來判定,而僅由以下申請專利範圍來判定。
若一般認為元件「A」耦接至元件「B」或與元件「B」耦接,則元件A可直接耦接至元件B或經由例如元件C間接耦接。當說明書或申請專利範圍陳述組件、特徵、結構、製程或特徵A「導致」組件、特徵、結構、製程或特性B時,其意謂「A」為「B」之至少部分原因,但可亦存在至少一個其他組件、特徵、結構、製程或特性來幫助導致「B」。若說明書表示組件、特徵、結構、製程或特性「可」被包括,則該特定組件、特徵、結構、製
程或特性不要求來被包括。若本說明書或申請專利範圍提及「一(a/an)」要素,則這並不意味存在所述要素中之僅一者。
實施例為實行方案或實例。在本說明書中提及「實施例」、「一個實施例」、「一些實施例」或「其他實施例」意謂結合實施例所述之特定特徵、結構或特性包括在至少一些實施例中,而不必須包括在所有實施例中。「一實施例」、「一個實施例」或「一些實施例」之各種出現並非必需全部指代同一實施例。應瞭解,在示範性實施例之先前描述中,有時出於使揭示內容合理化且幫助理解各種新型態樣中之一或多個的目的將各種特徵在單個實施例、圖或其描述中分組在一起。然而,此揭示方法將不被解釋為反映所主張的實施例需要比每一請求項中明確表述的更多特徵的意圖。相反,如以下申請專利範圍所反映,新型態樣在於少於單個先前所揭示實施例之所有特徵。因此,申請專利範圍在此明確併入此描述中,其中每一請求項堅持其自己作為分開的實施例。
在一些實施例中,一種設備包括:TSV陣列基板,其包括貫穿矽通孔(TSV)及引線結合接觸體;一或多個引線結合晶粒之堆疊體;以及封裝體,封裝體之第一側藉由第一互連件與TSV陣列基板耦接。在一些實施例中,一或多個引線結合晶粒經由一或多個引線連接至TSV陣列基板之一或多個引線結合接觸體;且TSV陣列基板提供用於一或多個引線結合晶粒中之每一者的連接。
在一些實施例中,設備進一步包括至少第一倒裝晶片晶粒,該第一倒裝晶片晶粒在第一晶粒之第一側上包括倒裝晶片接觸體,第一倒裝晶片晶粒經翻轉以將倒裝晶片接觸體與TSV陣列基板耦接。
在一些實施例中,一或多個引線結合晶粒之堆疊體耦接至倒裝晶片晶粒之第二側。
在一些實施例中,含有引線結合墊之TSV陣列基板包括沉積材料以賦能於引線結合墊上之引線結合。
在一些實施例中,沉積材料包括TiAl(鈦鋁)。
在一些實施例中,設備進一步包括第二互連件,該第二互連件位於封裝體之第二側上。
在一些實施例中,一種行動裝置包括:處理器;記憶體,其用於處理器之資料儲存;以及發射器及接收器,其用於與用於資料發射及接收之一或多個天線一起傳遞資料。在一些實施例中,行動裝置之一或多個組件包括在晶粒堆疊體中,該晶粒堆疊體包括:TSV陣列基板,其包括貫穿矽通孔(TSV)及引線結合接觸體;一或多個引線結合晶粒之堆疊體;以及封裝體,封裝體之第一側藉由第一互連件與TSV陣列基板耦接。在一些實施例中,一或多個引線結合晶粒經由一或多個引線連接至TSV陣列基板之一或多個引線結合接觸體;且其中TSV陣列基板提供用於一或多個引線結合晶粒中之每一者的連接部。
在一些實施例中,晶粒堆疊體進一步包括至少第一倒裝晶片晶粒,該第一倒裝晶片晶粒在第一晶粒之
第一側上包括倒裝晶片接觸體,第一倒裝晶片晶粒經翻轉以將倒裝晶片接觸體與TSV陣列基板耦接。
在一些實施例中,一或多個引線結合晶粒之堆疊體耦接至倒裝晶片晶粒之第二側。
在一些實施例中,含有引線結合墊之TSV陣列基板包括沉積材料以賦能於引線結合墊上之引線結合。
在一些實施例中,沉積材料包括TiAl(鈦鋁)。
在一些實施例中,晶粒堆疊體進一步包括第二互連件,該第二互連件位於封裝體之第二側上。
在一些實施例中,一種方法包括:製造包括貫穿矽通孔(TSV)之TSV陣列晶圓;使用晶片至晶圓附接將第一倒裝晶片晶粒附接至TSV陣列晶圓之第一側;以及將堆疊體中之多個引線結合晶粒附接至第一倒裝晶片晶粒,且將引線結合墊上之引線結合晶粒引線結合至TSV陣列晶圓。
在一些實施例中,該方法進一步包括:將晶粒封閉在模具中;以及單分包括第一倒裝晶片、引線結合晶粒及TSV陣列基板之堆疊模製晶粒。
在一些實施例中,TSV陣列基板包括位於TSV陣列基板之第二側上的第一層互連件,且利用第一層互連件將堆疊模製晶粒進一步附接至封裝體之第一側。
在一些實施例中,封裝體包括第二層互連件,該第二層互連件位於封裝體之第二側上。
在一些實施例中,第一倒裝晶片晶粒包括位
於第一倒裝晶片晶粒之第一側上的倒裝晶片接觸體,且在一些實施例中,附接第一倒裝晶片晶粒包括:將第一倒裝晶片翻轉以將倒裝晶片接觸體與TSV陣列基板附接。
在一些實施例中,將堆疊體中之引線結合晶粒附接至第一倒裝晶片晶粒包括:使用晶粒後側膜附接引線結合晶粒。
在一些實施例中,該方法進一步包括:沉積材料以賦能於引線結合墊上之引線結合。在一些實施例中,沉積材料包括:沉積TiAl(鈦鋁)。
100‧‧‧設備
110‧‧‧引線結合晶粒或引線結合晶粒堆疊體/引線結合晶粒或晶粒堆疊體
115‧‧‧引線
120‧‧‧倒裝晶片晶粒
125‧‧‧引線結合墊
130‧‧‧貫穿矽通孔格柵/TSV陣列基板/TSV格柵
140‧‧‧封裝體
Claims (16)
- 一種電子設備,其包含:一TSV陣列基板,其含有複數個貫穿矽通孔(TSV)及複數個引線結合接觸體,其中該TSV陣列基板係一全格柵TSV陣列基板;引線結合晶粒之一堆疊體,其包含具有一第一覆蓋區之一第一引線結合晶粒及具有一第二覆蓋區之一第二引線結合晶粒,該第二引線結合晶粒係在該第一引線結合晶粒上;一倒裝晶片晶粒,其包括在該倒裝晶片晶粒之一第一側上的數個倒裝晶片接觸體,該倒裝晶片晶粒經翻轉而將該等倒裝晶片接觸體與該TSV陣列基板耦接,其中該引線結合晶粒之堆疊體的該第一引線結合晶粒係耦接至該倒裝晶片晶粒之一第二側,該倒裝晶片晶粒具有小於該引線結合晶粒之堆疊體的該第一引線結合晶粒之該第一覆蓋區且小於該第二引線結合晶粒之該第二覆蓋區的一覆蓋區;以及一封裝體,該封裝體之一第一側藉由一第一互連件而與該TSV陣列基板耦接;其中,該第一及第二引線結合晶粒藉由一或多個引線而連接至該TSV陣列基板之一或多個引線結合接觸體;並且其中,該TSV陣列基板提供針對該第一及第二引線結合晶粒中之每一者的連接。
- 如請求項1之電子設備,其中,含有該等引線結合接觸體的該TSV陣列基板包含沉積材料,以使得能夠在該等引線結合接觸體上作引線結合。
- 如請求項2之電子設備,其中,該沉積材料包括鈦鋁(TiAl)。
- 如請求項1之電子設備,其進一步包含在該封裝體之一第二側上的一第二互連件。
- 一種行動裝置,其包含:一處理器;一記憶體,用以儲存用於該處理器的資料;以及一收發器,用以聯合用於資料收發的一或多個天線進行資料傳遞;其中,該行動裝置有一或多個組件係被包含在一晶粒堆疊體中,該晶粒堆疊體包含:一TSV陣列基板,其含有複數個貫穿矽通孔(TSV)及複數個引線結合接觸體,引線結合晶粒之一堆疊體,其包含具有一第一覆蓋區之一第一引線結合晶粒及具有一第二覆蓋區之一第二引線結合晶粒,該第二引線結合晶粒係在該第一引線結合晶粒上;一倒裝晶片晶粒,其包括在該倒裝晶片晶粒之一第一側上的數個倒裝晶片接觸體,該倒裝晶片晶粒經翻轉而將該等倒裝晶片接觸體與該TSV陣列基板耦接,其中該引線結合晶粒之堆疊體的該第一引線結合晶粒係耦接至該 倒裝晶片晶粒之一第二側,該倒裝晶片晶粒具有小於該引線結合晶粒之堆疊體的該第一引線結合晶粒之該第一覆蓋區且小於該第二引線結合晶粒之該第二覆蓋區的一覆蓋區,及一封裝體,該封裝體之一第一側藉由一第一互連件而與該TSV陣列基板耦接,其中該TSV陣列基板係一全格柵TSV陣列基板;其中,該第一及第二引線結合晶粒藉由一或多個引線而連接至該TSV陣列基板之一或多個引線結合接觸體;並且其中,該TSV陣列基板提供針對該第一及第二引線結合晶粒中之每一者的連接。
- 如請求項5之行動裝置,其中,含有該等引線結合接觸體的該TSV陣列基板包含沉積材料,以使得能夠在該等引線結合接觸體上作引線結合。
- 如請求項6之行動裝置,其中,該沉積材料包括鈦鋁(TiAl)。
- 如請求項5之行動裝置,其中,該晶粒堆疊體進一步包含在該封裝體之一第二側上的一第二互連件。
- 一種用於3D晶粒堆疊之方法,其包含下列步驟:製造含有複數個貫穿矽通孔(TSV)的一TSV陣列晶圓; 以晶片至晶圓附接方式將一倒裝晶片晶粒附接至該TSV陣列晶圓之一第一側;以及將一堆疊體中之多個引線結合晶粒附接至該倒裝晶片晶粒上,並以引線結合方式使該等引線結合晶粒與該TSV陣列晶圓的數個引線結合墊結合。
- 如請求項9之方法,其進一步包含下列步驟:將該等晶粒含納在一模具中,並獨立出包含該倒裝晶片晶粒、該等複數個引線結合晶粒及一TSV陣列基板的一堆疊模製晶粒。
- 如請求項10之方法,其中,該TSV陣列基板包含在該TSV陣列基板之一第二側上的一第一層互連件,並且該方法進一步包含下列步驟:使用該第一層互連件而將該堆疊模製晶粒附接至一封裝體之一第一側。
- 如請求項11之方法,其中,該封裝體包含在該封裝體之一第二側上的一第二層互連件。
- 如請求項9之方法,其中,該倒裝晶片晶粒包含在該倒裝晶片晶粒之一第一側上的數個倒裝晶片接觸體,並且其中,附接該倒裝晶片晶粒的步驟包括:將該倒裝晶片晶粒翻轉,以使該等倒裝晶片接觸體與該TSV陣列基板接合。
- 如請求項13之方法,其中,將該堆疊體中之該等複數個引線結合晶粒附接至該倒裝晶片晶粒的 步驟包括:利用晶粒後側膜來附接該等引線結合晶粒。
- 如請求項9之方法,其進一步包含下列步驟:沉積材料以使得能夠在該等引線結合墊上作引線結合。
- 如請求項15之方法,其中,沉積材料的步驟包括:沉積鈦鋁(TiAl)。
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- 2015-12-26 US US15/774,512 patent/US20200066640A1/en active Pending
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2016
- 2016-11-25 TW TW105138784A patent/TWI747856B/zh active
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Also Published As
Publication number | Publication date |
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US20200066640A1 (en) | 2020-02-27 |
WO2017111825A1 (en) | 2017-06-29 |
DE112015007236B4 (de) | 2024-05-08 |
DE112015007236T5 (de) | 2018-10-11 |
TW201735310A (zh) | 2017-10-01 |
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