TWI743555B - 基於GaN之可調電流驅動器電路 - Google Patents

基於GaN之可調電流驅動器電路 Download PDF

Info

Publication number
TWI743555B
TWI743555B TW108131917A TW108131917A TWI743555B TW I743555 B TWI743555 B TW I743555B TW 108131917 A TW108131917 A TW 108131917A TW 108131917 A TW108131917 A TW 108131917A TW I743555 B TWI743555 B TW I743555B
Authority
TW
Taiwan
Prior art keywords
current
transistor
capacitor
power transistor
supply voltage
Prior art date
Application number
TW108131917A
Other languages
English (en)
Chinese (zh)
Other versions
TW202025606A (zh
Inventor
愛德華 李
拉維 阿南斯
麥可 強普曼
約翰 Ｓ 葛雷瑟
史蒂芬 Ｌ 柯里諾
Original Assignee
美商高效電源轉換公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商高效電源轉換公司 filed Critical 美商高效電源轉換公司
Publication of TW202025606A publication Critical patent/TW202025606A/zh
Application granted granted Critical
Publication of TWI743555B publication Critical patent/TWI743555B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4868—Controlling received signal intensity or exposure of sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Remote Sensing (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
TW108131917A 2018-09-05 2019-09-04 基於GaN之可調電流驅動器電路 TWI743555B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862727115P 2018-09-05 2018-09-05
US62/727,115 2018-09-05

Publications (2)

Publication Number Publication Date
TW202025606A TW202025606A (zh) 2020-07-01
TWI743555B true TWI743555B (zh) 2021-10-21

Family

ID=69640256

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108131917A TWI743555B (zh) 2018-09-05 2019-09-04 基於GaN之可調電流驅動器電路

Country Status (7)

Country Link
US (1) US10749514B2 (cg-RX-API-DMAC10.html)
EP (1) EP3847739A4 (cg-RX-API-DMAC10.html)
JP (1) JP7612567B2 (cg-RX-API-DMAC10.html)
KR (1) KR102674752B1 (cg-RX-API-DMAC10.html)
CN (1) CN112956119B (cg-RX-API-DMAC10.html)
TW (1) TWI743555B (cg-RX-API-DMAC10.html)
WO (1) WO2020051138A1 (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
JP7647037B2 (ja) * 2020-09-08 2025-03-18 株式会社リコー 投光装置、物体検出装置、移動体、投光方法及びプログラム
CN114185393B (zh) * 2021-12-09 2023-05-26 中国人民解放军国防科技大学 加固电流镜电路及抗单粒子瞬态效应的加固方法
JP7850656B2 (ja) * 2022-01-18 2026-04-23 イノサイエンス （スーチョウ） セミコンダクター カンパニー リミテッド バッテリー管理用の窒化物系双方向スイッチング装置とその製造方法
US12444956B2 (en) 2022-01-18 2025-10-14 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
US12143112B2 (en) 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
CN116526811A (zh) * 2022-12-30 2023-08-01 苏州华太电子技术股份有限公司 开关驱动电路及驱动芯片
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
TWI901096B (zh) * 2024-04-25 2025-10-11 立錡科技股份有限公司 可防止突波的閘極驅動電路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
TW201624924A (zh) * 2014-09-16 2016-07-01 納維達斯半導體公司 使用氮化鎵裝置半橋功率轉換電路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US6980034B2 (en) * 2002-08-30 2005-12-27 Cadence Design Systems, Inc. Adaptive, self-calibrating, low noise output driver
AU2003255908A1 (en) * 2002-09-23 2004-04-08 Koninklijke Philips Electronics N.V. Matrix display device with photosensitive element
US7088127B2 (en) * 2003-09-12 2006-08-08 Rambus, Inc. Adaptive impedance output driver circuit
DE602005005060T2 (de) * 2005-09-30 2009-06-04 Infineon Technologies Ag Leistungsschaltkreis für eine Airbagzündpille
EP2354882B1 (en) 2010-02-10 2017-04-26 Nxp B.V. Switchable current source circuit and method
US20120007660A1 (en) * 2010-07-08 2012-01-12 Derek Hummerston Bias Current Generator
JP2013013044A (ja) * 2011-05-31 2013-01-17 Sanken Electric Co Ltd ゲートドライブ回路
US9344077B2 (en) 2012-04-04 2016-05-17 Cree, Inc. High voltage driver
US8742803B2 (en) 2012-09-26 2014-06-03 Broadcom Corporation Output driver using low voltage transistors
US9564794B2 (en) * 2013-12-04 2017-02-07 Broadcom Corporation System, apparatus, and method for a ping-pong charge pump
US9985626B2 (en) * 2015-01-30 2018-05-29 Navitas Semiconductor, Inc. Bidirectional GaN switch with built-in bias supply and integrated gate drivers
JP6296082B2 (ja) * 2016-03-09 2018-03-20 トヨタ自動車株式会社 駆動装置
US10404251B2 (en) * 2016-05-04 2019-09-03 The Hong Kong University Of Science And Technology Power device with integrated gate driver
CN108462485B (zh) * 2017-02-22 2022-02-08 中芯国际集成电路制造(上海)有限公司 一种延时电路及电子装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
TW201624924A (zh) * 2014-09-16 2016-07-01 納維達斯半導體公司 使用氮化鎵裝置半橋功率轉換電路
TW201629665A (zh) * 2014-09-16 2016-08-16 納維達斯半導體公司 用於氮化鎵電路負載之氮化鎵電路驅動器

Also Published As

Publication number Publication date
TW202025606A (zh) 2020-07-01
WO2020051138A1 (en) 2020-03-12
JP7612567B2 (ja) 2025-01-14
KR20210053329A (ko) 2021-05-11
EP3847739A4 (en) 2022-07-06
EP3847739A1 (en) 2021-07-14
CN112956119A (zh) 2021-06-11
JP2021536702A (ja) 2021-12-27
CN112956119B (zh) 2024-11-05
US20200076413A1 (en) 2020-03-05
KR102674752B1 (ko) 2024-06-14
US10749514B2 (en) 2020-08-18

Similar Documents

Publication Publication Date Title
US10749514B2 (en) GaN based adjustable driver current circuit
US10680589B2 (en) GaN based fail-safe shutdown of high-current drivers
TWI631806B (zh) 電力電路以及驅動電路
CN105469742B (zh) 一种有机发光显示器及显示装置
US10110222B2 (en) Drive unit
KR20070040746A (ko) 전력 제어 시스템 개시 방법 및 회로
US10311784B2 (en) Pixel driver circuit, display device and pixel driving method
TWI702797B (zh) 輸出電路
JP2014096405A (ja) 光送信回路
US20180024584A1 (en) Voltage source
US20190081564A1 (en) Method and circuitry for sensing and controlling a current
US11294055B2 (en) Driving circuit to generate a signal pulse for operating a light-emitting diode
KR20210020057A (ko) 정밀 고전류 쇼트 채널 드라이버를 위한 전류 보정 기술
JP6983355B2 (ja) 集積バスブースト回路を有する電流パルス発生器
TWI770881B (zh) 電源供應產生器及其操作方法
JP5882761B2 (ja) 発光素子駆動装置、発光装置、車両
US20230417881A1 (en) Light Emitting Device
JP2017041968A (ja) 電力供給装置及びその制御方法
US9900948B2 (en) Reference voltage generator and light emitting diode device comprising the same
JP2016076315A (ja) 発光素子駆動装置、発光装置、車両

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees