TWI743360B - The method of electrochemical production of germane - Google Patents
The method of electrochemical production of germane Download PDFInfo
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- TWI743360B TWI743360B TW107116522A TW107116522A TWI743360B TW I743360 B TWI743360 B TW I743360B TW 107116522 A TW107116522 A TW 107116522A TW 107116522 A TW107116522 A TW 107116522A TW I743360 B TWI743360 B TW I743360B
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Abstract
一種以電化學製造鍺烷之方法,係於具有隔膜、陽極及包含銀之陰極的電化學單元(cell)中,對包含鍺化合物之電解液通電,於陰極產生鍺烷。A method of electrochemically manufacturing germane is in an electrochemical cell with a diaphragm, an anode and a cathode containing silver, and an electrolyte containing a germanium compound is energized to generate germane at the cathode.
Description
本發明有關以電化學製造鍺烷之方法。The present invention relates to a method of electrochemically producing germane.
以往,半導體裝置之高速化・低消耗電力化可藉由該裝置之微細化等而達成,但作為用以進一步高速化・低消耗電力化之技術,SiGe基板等之應變矽(strained silicon)備受矚目。 作為製造該SiGe基板時之原料,係使用鍺烷(GeH4 ),隨著SiGe基板之使用增加,預測GeH4 之使用量亦會增加。In the past, high-speed and low-power consumption of semiconductor devices can be achieved by miniaturization of the device. However, as a technology for further high-speed and low-power consumption, strained silicon such as SiGe substrates is available. By the attention. Germane (GeH 4 ) is used as the raw material for manufacturing the SiGe substrate. As the use of SiGe substrates increases, it is predicted that the amount of GeH 4 used will increase.
作為此等GeH4 之製造方法,例如於專利文獻1中記載藉由使用Cu合金或Sn合金作為陰極,而可以高的電流效率電化學製造GeH4 。As a method for producing such GeH 4 , for example, Patent Document 1 describes that by using Cu alloy or Sn alloy as a cathode, GeH 4 can be produced electrochemically with high current efficiency.
又,於非專利文獻1中記載作為電化學製造GeH4 時所用之陰極,篩選Pt、Zn、Ti、石墨、Cu、Ni、Cd、Pb、Sn之結果,就電流效率及汙染等之觀點,Cd或Cu最適合。In addition, Non-Patent Document 1 describes the results of screening Pt, Zn, Ti, graphite, Cu, Ni, Cd, Pb, Sn as a cathode used in the electrochemical production of GeH 4, and from the viewpoints of current efficiency and pollution, etc. Cd or Cu are most suitable.
再者,非專利文獻2中揭示作為電化學製造GeH4 時所用之陰極,調查複數種陰極之結果,使用Hg作為陰極時,氫化率成為99%以上。 [先前技術文獻] [專利文獻]Furthermore, Non-Patent Document 2 discloses that it is used as a cathode for electrochemical production of GeH 4 , and as a result of investigating a plurality of cathodes, when Hg is used as the cathode, the hydrogenation rate becomes 99% or more. [Prior Technical Documents] [Patent Documents]
[專利文獻1]日本特開2012-52234號公報 [非專利文獻][Patent Document 1] JP 2012-52234 A [Non-Patent Document]
[非專利文獻1] Turygin et. al., Inorganic Materials, 2008, vol.44, No.10, pp.1081-1085 [非專利文獻2] Djurkovic et. al., Glanik Hem. Drustva, Beograd, 1961, vol.25/26, pp.469-475[Non-Patent Document 1] Turygin et. al., Inorganic Materials, 2008, vol.44, No.10, pp.1081-1085 [Non-Patent Document 2] Djurkovic et. al., Glanik Hem. Drustva, Beograd, 1961 , vol.25/26, pp.469-475
[發明欲解決之課題][The problem to be solved by the invention]
如前述文獻所記載之以往電化學製造GeH4 之方法,例如前述專利文獻1之實施例所用之陰極(McMaster-Carr公司製之青銅)以電鍍或塗覆等僅於表面存在有效元素之方法難以應用,或因前述非專利文獻2所用之陰極(Hg)毒性高等之理由,而不利於作為工業上製造GeH4 之方法。The conventional electrochemical manufacturing method of GeH 4 described in the aforementioned document, for example, the cathode (bronze manufactured by McMaster-Carr Company) used in the example of the aforementioned Patent Document 1 is difficult to use methods that only have effective elements on the surface such as electroplating or coating. Application, or because of the high toxicity of the cathode (Hg) used in Non-Patent Document 2, is unfavorable as a method for industrially producing GeH 4.
本發明之一實施形態係提供工業上有利之方法作為電化學製造GeH4 之方法。 [用以解決課題之手段]An embodiment of the present invention provides an industrially advantageous method as a method for electrochemically producing GeH 4 . [Means to solve the problem]
本發明人為解決前述課題積極檢討之結果,發現依據下述製造方法等,可解決前述課題,因而完成本發明。 本發明之構成例係如以下。The inventors of the present invention have actively studied to solve the aforementioned problems, and found that the aforementioned problems can be solved according to the following manufacturing method and the like, thus completing the present invention. The configuration example of the present invention is as follows.
[1]一種以電化學製造鍺烷之方法,係於具有隔膜、陽極及包含銀之陰極的電化學單元(cell)中,對包含鍺化合物之電解液通電,於陰極產生鍺烷。[1] A method of electrochemically producing germane, in an electrochemical cell having a separator, an anode, and a cathode containing silver, an electrolyte containing a germanium compound is energized to generate germane at the cathode.
[2]如[1]之製造方法,其中前述電解液係包含二氧化鍺與離子性物質之電解液。 [3]如[2]之製造方法,其中前述離子性物質係氫氧化鉀或氫氧化鈉。 [4]如[2]或[3]之製造方法,其中前述離子性物質係氫氧化鉀,且前述電解液中之氫氧化鉀濃度為1~8mol/L。[2] The manufacturing method of [1], wherein the electrolyte is an electrolyte containing germanium dioxide and an ionic substance. [3] The manufacturing method as in [2], wherein the aforementioned ionic substance is potassium hydroxide or sodium hydroxide. [4] The manufacturing method of [2] or [3], wherein the aforementioned ionic substance is potassium hydroxide, and the concentration of potassium hydroxide in the aforementioned electrolyte is 1-8 mol/L.
[5]如[1]~[4]中任一項之製造方法,其中前述通電時之陰極電流密度為30~500mA/cm2 。 [6]如[1]~[5]中任一項之製造方法,其中前述產生鍺烷時之反應溫度為5~100℃。 [發明效果][5] The manufacturing method of any one of [1] to [4], wherein the current density of the cathode when energized is 30 to 500 mA/cm 2 . [6] The manufacturing method of any one of [1] to [5], wherein the reaction temperature when the germane is produced is 5-100°C. [Effects of the invention]
依據本發明之一實施形態,可藉由工業上有利方法特別是高的電流效率電化學製造GeH4 。 According to an embodiment of the present invention, GeH 4 can be produced by an industrially advantageous method, particularly high current efficiency electrochemical production.
<<電化學製造GeH4 之方法>> 本發明一實施形態之電化學製造GeH4 之方法(以下亦稱為「本方法」)係於具有隔膜、陽極及包含銀之陰極的電化學單元中,對包含鍺化合物之電解液通電,於陰極產生GeH4 ,而電化學製造GeH4 。 依據本方法,可藉由工業上有利方法特別是高的電流效率電化學製造GeH4 。因此,藉由使用以本方法所得之GeH4 ,亦可有利於工業上製造SiGe基板。<<Method of electrochemically producing GeH 4 >> The method of electrochemically producing GeH 4 according to an embodiment of the present invention (hereinafter also referred to as "the method") is in an electrochemical cell having a separator, an anode, and a cathode containing silver , the energization of the electrolytic solution of the compound containing germanium, to produce a cathode GeH 4, electrochemically manufactured GeH 4. According to this method, GeH 4 can be produced by industrially advantageous methods, especially high current efficiency electrochemistry. Therefore, by using the GeH 4 obtained by this method, it is also advantageous for the industrial manufacturing of SiGe substrates.
作為如此之工業反應,舉例為例如如電解液容量為500~2500L,單元數為30~150個,使用的電流為100~300A之規模的反應。As an example of such an industrial reaction, for example, an electrolyte with a capacity of 500 to 2500L, a number of units of 30 to 150, and a current used in a scale of 100 to 300A are exemplified.
依據本方法,可以較好為10~90%,更好為12~40%之電流效率製造GeH4 。 又,前述電流效率具體而言可藉下述實施例記載之方法測定。 According to this method, GeH 4 can be manufactured with a current efficiency of preferably 10 to 90%, more preferably 12 to 40%. In addition, the aforementioned current efficiency can be specifically measured by the method described in the following Examples.
<電化學單元> 作為前述電化學單元,若具有隔膜、陽極及前述陰極,則未特別限制,可使用以往習知之單元。 作為該單元具體舉例為使用隔膜隔開包含陽極之陽極室及包含陰極之陰極室之單元等。<Electrochemical cell> ""As the electrochemical cell, if it has a separator, an anode, and the cathode, it is not particularly limited, and a conventionally known cell can be used. A specific example of the unit is a unit that uses a diaphragm to separate an anode compartment containing an anode and a cathode compartment containing a cathode.
<陰極> 前述陰極若包含Ag則未加以限制。 該陰極可為由金屬Ag所成之電極或以Ag為主成分之Ag基合金所成之電極,亦可為電鍍或塗覆金屬Ag或Ag合金之電極。 作為前述電鍍或塗覆之電極舉例為於Ni等之基材上電鍍或塗覆金屬Ag或Ag合金之電極等。 該等中,金屬Ag由於昂貴,故基於成本面,較好為電鍍或塗覆金屬Ag或Ag合金之電極。<Cathode> If the aforementioned cathode contains Ag, it is not limited. The cathode can be an electrode made of metallic Ag or an electrode made of Ag-based alloy with Ag as the main component, or an electrode made of electroplating or coated with metallic Ag or Ag alloy. "" As the aforementioned electroplated or coated electrode, for example, electroplated or coated metal Ag or Ag alloy electrode on a Ni substrate or the like. Among these, metal Ag is expensive, so based on cost, it is preferably an electrode plated or coated with metallic Ag or Ag alloy.
前述陰極之形狀並未特別限制,可為板狀、柱狀、中空狀等之任一種。 且前述陰極之大小、表面積等,並未特別限制。The shape of the foregoing cathode is not particularly limited, and it may be any of a plate shape, a column shape, a hollow shape, and the like. "And the size and surface area of the aforementioned cathode are not particularly limited.
<陽極> 作為前述陽極,並未特別限制,只要使用電化學製造GeH4 時以往使用之陽極即可,但較好為由Ni及Pt等之導電性金屬所成之電極、以該導電性金屬為主成分之合金所成之電極等,基於成本面,較好為由Ni所成之電極。 又,前述陽極與陰極同樣,可使用電鍍或塗覆前述導電性金屬或包含該金屬之合金的電極。 前述陽極之形狀、大小、表面積等,亦與前述陰極同樣未特別限制。<Anode> As the aforementioned anode, there is no particular limitation. As long as the anode used in the electrochemical production of GeH 4 is used, it is preferably an electrode made of a conductive metal such as Ni and Pt. An electrode made of an alloy with a main component, etc., is preferably an electrode made of Ni based on cost. In addition, the anode, like the cathode, can be electroplated or coated with the conductive metal or an alloy containing the metal. The shape, size, surface area, etc. of the foregoing anode are also not particularly limited as the foregoing cathode.
<隔膜> 作為前述隔膜並未特別限制,只要使用於電化學單元中以往使用之可隔開陽極室與陰極室之隔膜即可。 作為此種隔膜,可使用各種電解質膜或多孔質膜。 作為電解質膜舉例為高分子電解質膜例如離子交換固體高分子電解質膜,具體而言為NAFION(註冊商標)115、117、NRE-212 (SIGMA ALDRICH公司製)等。 作為多孔質膜可使用多孔質玻璃、多孔質氧化鋁、多孔質氧化鈦等之多孔質陶瓷、多孔質聚乙烯、多孔質丙烯等之多孔質聚合物等。<Diaphragm> ""The above-mentioned membrane is not particularly limited, as long as it is used in an electrochemical cell that can separate the anode chamber and the cathode chamber. As such a separator, various electrolyte membranes or porous membranes can be used. """ As an electrolyte membrane, a polymer electrolyte membrane such as an ion exchange solid polymer electrolyte membrane is exemplified, specifically NAFION (registered trademark) 115, 117, NRE-212 (manufactured by SIGMA ALDRICH), and the like. As the porous membrane, porous ceramics such as porous glass, porous alumina, and porous titanium oxide, and porous polymers such as porous polyethylene and porous propylene can be used.
本發明之一實施形態中,由於藉由隔膜將電化學單元分為陽極室與陰極室,故於陽極產生之O2 氣體與於陰極產生之GeH4 不會混合,可自各別電極室之獨立出口取出。 若O2 氣體與GeH4 混合,則O2 氣體與GeH4 反應,有GeH4 之收率降低之傾向。In one embodiment of the present invention, since the electrochemical cell is divided into an anode chamber and a cathode chamber by a diaphragm, the O 2 gas generated at the anode and the GeH 4 generated at the cathode will not be mixed, and can be separated from each electrode chamber Take out the exit. When the gas is mixed with 4 GeH O, O 2 gas and the GeH 4 reaction tends to decrease the yield of GeH 4.
<包含鍺化合物之電解液> 本方法係由包含鍺化合物之電解液製造GeH4 。 該電解液較好為水溶液。<Electrolyte containing germanium compound> In this method, GeH 4 is produced from an electrolyte containing germanium compound. The electrolyte is preferably an aqueous solution.
作為前述鍺化合物較好為GeO2 。 前述電解液中之GeO2 之濃度越高反應速度越快,可有效率地合成GeH4 ,故溶劑較好為,設定成相對於水之飽和濃度為較好。The germanium compound is preferably GeO 2 . The higher the concentration of GeO 2 in the foregoing electrolyte, the faster the reaction rate, and the efficient synthesis of GeH 4. Therefore, the solvent is preferably set to a saturation concentration relative to water.
為了提高電解液之導電性,促進GeO2 對水的溶解性,前述電解液較好包含離子性物質。 作為該離子性物質可使用電化學所用之以往習知之離子性物質,但基於前述效果優異等之觀點,較好為KOH或NaOH。該等中,KOH水溶液之導電性比NaOH水溶液更優異,故較好為KOH。In order to improve the conductivity of the electrolyte and promote the solubility of GeO 2 in water, the aforementioned electrolyte preferably contains ionic substances. As the ionic substance, conventionally known ionic substances used in electrochemistry can be used, but from the viewpoint of the aforementioned excellent effects, etc., KOH or NaOH is preferred. Among them, the conductivity of the KOH aqueous solution is superior to that of the NaOH aqueous solution, so KOH is preferred.
前述電解液中之KOH濃度較好為1~8mol/L,更好為2~5mol/L。 KOH濃度於前述範圍內時,容易獲得GeO2 濃度高的電解液,可以高的電流效率有效地製造GeH4 。 KOH濃度未達前述範圍之下限時,有電解液之導電性變低之傾向,有於製造GeH4 時需要高電壓之情況,又,有GeO2 對水之溶解量降低之傾向,有使反應效率降低之情況。另一方面,KOH濃度超過前述範圍之上限時,作為電極或單元材質有必須為耐腐蝕性高的材質之傾向,有裝置成本變高之情況。The KOH concentration in the aforementioned electrolyte is preferably 1-8 mol/L, more preferably 2-5 mol/L. When the KOH concentration is within the aforementioned range, it is easy to obtain an electrolyte solution with a high GeO 2 concentration, and GeH 4 can be efficiently produced with high current efficiency. When the KOH concentration does not reach the lower limit of the aforementioned range, the conductivity of the electrolyte tends to be low, and high voltage is required for the production of GeH 4. In addition, the amount of GeO 2 dissolved in water tends to decrease, which may cause the reaction Conditions of reduced efficiency. On the other hand, when the KOH concentration exceeds the upper limit of the aforementioned range, there is a tendency that the electrode or cell material must be a material with high corrosion resistance, which may increase the cost of the device.
<反應條件> 本方法中,製造GeH4 時(前述通電時)之陰極的每單位面積之電流大小(電流密度),基於反應速度優異,可以高的電流效率製造GeH4 等之觀點,較好為30~500mA/cm2 ,更好為50~400mA/cm2 。 電流密度為前述範圍時,每單位時間之GeH4 的產生速度或反應效率不會降低,亦可將因水的電解所致之氫氣產生量抑制於適度。<Reaction conditions> In this method, the current magnitude (current density) per unit area of the cathode at the time of manufacturing GeH 4 (at the aforementioned energization) is preferable based on the viewpoint that the reaction rate is excellent and GeH 4 can be manufactured with high current efficiency. It is 30~500mA/cm 2 , more preferably 50~400mA/cm 2 . When the current density is in the aforementioned range, the rate of GeH 4 generation per unit time or the reaction efficiency will not decrease, and the amount of hydrogen generated by the electrolysis of water can also be suppressed to an appropriate level.
製造GeH4 時(產生GeH4 時)之反應溫度,基於反應速度優異,可以低成本製造GeH4 等之觀點,較好為5~100℃,更好為10~40℃。 反應溫度若為前述範圍內,反應效率不會降低,亦可將用於單元加熱之電力消耗抑制於適度。The reaction temperature for producing GeH 4 (produced GeH 4) of, based on the reaction rate is excellent, can be manufactured at low cost viewpoint GeH 4, etc., preferably 5 ~ 100 ℃, more preferably 10 ~ 40 ℃. If the reaction temperature is within the aforementioned range, the reaction efficiency will not decrease, and the power consumption for unit heating can also be suppressed to an appropriate level.
製造GeH4 時之反應環境(陽極室與陰極室之氣相部分)並未特別限制,但較好為惰性氣體環境,作為該惰性氣體較好為氮氣。The reaction environment (the gas phase part of the anode chamber and the cathode chamber) in the production of GeH 4 is not particularly limited, but is preferably an inert gas environment, and the inert gas is preferably nitrogen.
本方法中,電化學單元中之前述電解液,可為靜止狀態,亦可攪拌,亦可另外設置其他液槽並循環流通。 前述設置其他液槽並循環流通時,反應液濃度之變化相對變小,可期待電流效率之安定化,且將電極表面之GeO2 濃度保持為較高,可期待反應速度之提高。因此,電化學單元中之前述電解液較好循環流通。In this method, the aforesaid electrolyte in the electrochemical cell can be in a static state, can also be stirred, or other liquid tanks can be additionally provided and circulated. When other liquid tanks are installed and circulated as described above, the change in the concentration of the reaction solution is relatively small, the current efficiency can be expected to stabilize, and the GeO 2 concentration on the electrode surface can be kept high, and the reaction rate can be expected to increase. Therefore, the aforementioned electrolyte in the electrochemical cell is better circulated.
<GeH4 之製造裝置> 本方法若使用前述電化學單元則未特別限制,但可使用除該單元以外,具有例如如圖1所示之電源、測定手段(FT-IR、壓力計(PI)、累算計等)、氮氣(N2 )供給路徑、質量流動控制器(MFC)、排氣路徑等之以往習知構件之裝置。 且亦可使用具有未圖示之前述循環流路等之裝置。 [實施例]<GeH 4 manufacturing apparatus> This method is not particularly limited if the aforementioned electrochemical cell is used, but in addition to the cell, a power source and measuring means (FT-IR, pressure gauge (PI) as shown in Fig. 1 can be used. , Accumulator, etc.), nitrogen (N 2 ) supply path, mass flow controller (MFC), exhaust path and other conventionally known components. In addition, a device having the aforementioned circulation flow path not shown in the figure can also be used. [Example]
以下列舉實施例具體說明本發明,但本發明不限定於該等實施例。Examples are listed below to specifically illustrate the present invention, but the present invention is not limited to these examples.
[實施例1] 使用以下材料,如圖1所示,製作以隔膜隔開陽極室與陰極室之氯乙烯製電化學單元。 ・陰極:0.5cm×0.5cm×厚0.5mm之Ag板 ・陽極:2cm×2cm×厚0.5mm之Ni板 ・隔膜:NAFION(註冊商標)NRE-212(SIGMA ALDRICH公司製) ・電解液:於4mol/L之KOH水溶液中以90g/L濃度溶解GeO2 之液體 ・對陰極室之電解液導入量:100mL ・對陽極室之電解液導入量:100mL ・標準電極:於陰極設置銀-氯化銀電極[Example 1] Using the following materials, as shown in FIG. 1, an electrochemical cell made of vinyl chloride in which the anode chamber and the cathode chamber were separated by a diaphragm was fabricated.・Cathode: Ag plate of 0.5cm×0.5cm×thickness 0.5mm ・Anode: Ni plate of 2cm×2cm×thickness 0.5mm ・Separator: NAFION (registered trademark) NRE-212 (manufactured by SIGMA ALDRICH) ・Electrolyte: in A liquid that dissolves GeO 2 at a concentration of 90g/L in a 4mol/L KOH aqueous solution. ・The amount of electrolyte introduced into the cathode chamber: 100mL ・The amount of electrolyte introduced into the anode chamber: 100mL ・Standard electrode: Silver-chloride is installed on the cathode Silver electrode
所得電化學單元中之陽極室及陰極室之氣相部分以氮氣(N2 )吹拂後,使用北斗電工(股)製Hz-5000作為電源,以-57mA流動10分鐘電流,電化學製造GeH4 。此時之電流密度為99mA/cm2 。 又,流動電流時之電化學單元溫度並未控制,結果反應溫度為14℃。 藉由使用累算計測定陰極室之出口氣體,而測定因反應產生之出口氣體總量(包含GeH4 及氫氣之氣體),使用FT-IR,測定出口氣體總量中之GeH4 濃度。由該等測定結果,算出GeH4 之產生量。After the gas phase part of the anode and cathode chambers in the obtained electrochemical cell is blown with nitrogen (N 2 ), use Hz-5000 manufactured by Beidou Electric Co., Ltd. as a power source, and flow a current of -57mA for 10 minutes to electrochemically produce GeH 4 . The current density at this time is 99 mA/cm 2 . In addition, the temperature of the electrochemical cell was not controlled when the current was flowing, and as a result, the reaction temperature was 14°C. By using an accumulator to measure the outlet gas of the cathode chamber, the total amount of outlet gas produced by the reaction (including GeH 4 and hydrogen gas) is measured, and the FT-IR is used to measure the GeH 4 concentration in the total outlet gas. From these measurement results, the amount of GeH 4 produced was calculated.
施加電流後,自0~10分鐘間之GeH4 產生量與施加之電流量,基於下述式算出電流效率,該電流效率設為反應時間10分鐘之電流效率。結果示於表1。 電流效率(%)=[相當於產生前述產生量(mmol/min)之GeH4 的電量(C/min)×10(min)×100]/[施加之總電量(C/min)×10(min)] After the current is applied, the current efficiency is calculated based on the following formula from the amount of GeH 4 generated between 0 and 10 minutes and the amount of current applied. The current efficiency is set as the current efficiency for a reaction time of 10 minutes. The results are shown in Table 1. Current efficiency (%) = (equivalent to the amount of electricity (C/min) × 10 (min) × 100 that produces the aforementioned amount of GeH 4 (mmol/min) min)]
[比較例1] 除了使用0.5cm×0.5cm×厚0.5mm之Cu板作為陰極,施加的電流變更為於-85mA下10分鐘以外,以與實施例1同樣條件進行反應。結果示於表1。[Comparative Example 1] "The reaction was carried out under the same conditions as in Example 1, except that a 0.5 cm × 0.5 cm × 0.5 mm thick Cu plate was used as the cathode and the applied current was changed to -85 mA for 10 minutes. The results are shown in Table 1.
[比較例2] 除了使用0.5cm×0.5cm×厚0.5mm之Cd板作為陰極,施加的電流變更為於-55mA下10分鐘以外,以與實施例1同樣條件進行反應。結果示於表1。[Comparative Example 2] The reaction was carried out under the same conditions as in Example 1, except that a 0.5 cm × 0.5 cm × 0.5 mm thick Cd plate was used as the cathode and the applied current was changed to -55 mA for 10 minutes. The results are shown in Table 1.
圖1係實施例所用之裝置的概略示意圖。Fig. 1 is a schematic diagram of the device used in the embodiment.
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