TWI740100B - Lead frame, lead frame with resin, method of manufacturing lead frame with resin, and method of manufacturing semiconductor device - Google Patents

Lead frame, lead frame with resin, method of manufacturing lead frame with resin, and method of manufacturing semiconductor device Download PDF

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Publication number
TWI740100B
TWI740100B TW108104456A TW108104456A TWI740100B TW I740100 B TWI740100 B TW I740100B TW 108104456 A TW108104456 A TW 108104456A TW 108104456 A TW108104456 A TW 108104456A TW I740100 B TWI740100 B TW I740100B
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Taiwan
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lead frame
resin
mold
unit lead
unit
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TW108104456A
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Chinese (zh)
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TW201937670A (en
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佐藤信明
西村明
小内諭
戸村信章
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日商三井高科技股份有限公司
日商信越化學工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Abstract

An objective of the present invention is to suppress deformation of a plurality of unit lead frames connected along a predetermined direction. A lead frame of the present invention includes a frame, a unit lead frame formation region, and a reinforcing portion. The frame is provided to surround an outer periphery portion.
The unit lead frame formation region is provided in the frame, and a plurality of unit lead frames are arranged in matrix, and the plurality of unit lead frames are connected along a predetermined direction. The reinforcing portion extends in a direction intersecting at least a predetermined direction in the unit lead frame formation region.

Description

引線框架、附樹脂之引線框架、附樹脂之引線框架的製造方法及半導體裝置的製造方法 Lead frame, lead frame with resin, method for manufacturing lead frame with resin, and method for manufacturing semiconductor device

本發明所揭示的實施形態是關於一種引線框架、附樹脂之引線框架、附樹脂之引線框架的製造方法及半導體裝置的製造方法。 The embodiment disclosed in the present invention relates to a lead frame, a lead frame with resin, a method of manufacturing a lead frame with resin, and a method of manufacturing a semiconductor device.

以往，在整個用樹脂封裝(MAP：Molded Array Package壓模陣列封裝)型的引線框架中，已知有一種對應於一個半導體裝置的單位引線框架沿著既定方向而連結的引線框架(例如參照專利文獻1)。 Conventionally, among the lead frames of the entire resin package (MAP: Molded Array Package) type, there is known a lead frame in which a unit lead frame corresponding to a semiconductor device is connected along a predetermined direction (for example, refer to the patent Literature 1).

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本國專利第5896302號公報 [Patent Document 1] Japanese Patent No. 5896302

然而，以往的引線框架中，沿著既定方向而連結的單位引線框架的長度如果變長，強度就會變小，且容易變形，因此在使用該引線框架的半導體裝置的製程中可能會因為該變形而發生不良的狀況。 However, in the conventional lead frame, if the length of the unit lead frame connected along a predetermined direction becomes longer, the strength becomes smaller and it is easily deformed. Therefore, it may be caused by this in the manufacturing process of the semiconductor device using the lead frame. Deformation and a bad condition.

實施形態之一樣態是鑑於上述情況而完成的，其目的在於提供一種可抑制沿著既定方向而連結的複數個單位引線框架之變形的引線框架。 The same aspect of the embodiment was completed in view of the above situation, and its purpose is to provide a lead frame that can suppress the deformation of a plurality of unit lead frames connected along a predetermined direction.

實施形態之一樣態的引線框架係具備框體、單位引線框架形成區域、及補強部。前述框體以包圍外周部的方式設置。前述單位引線框架形成區域設在前述框體內供複數個單位引線框架並列成矩陣狀，且複數個前述單位引線框架沿著既定方向而連結。前述補強部係在前述單位引線框架形成區域內至少朝向與前述既定方向相交的方向延伸。 The lead frame in the same state of the embodiment includes a frame body, a unit lead frame formation area, and a reinforcing part. The aforementioned frame is provided so as to surround the outer peripheral portion. The unit lead frame forming area is provided in the frame body for a plurality of unit lead frames to be arranged in a matrix, and the plurality of unit lead frames are connected along a predetermined direction. The reinforcing portion extends at least in a direction intersecting the predetermined direction in the unit lead frame formation area.

根據實施形態之一樣態，可抑制沿著既定方向而連結的複數個單位引線框架之變形。 According to the same aspect of the embodiment, the deformation of a plurality of unit lead frames connected along a predetermined direction can be suppressed.

1‧‧‧引線框架 1‧‧‧Lead frame

2‧‧‧附樹脂之引線框架 2‧‧‧Lead frame with resin

3‧‧‧半導體裝置 3‧‧‧Semiconductor device

10‧‧‧框體 10‧‧‧Frame

10a‧‧‧凹部 10a‧‧‧Concave

11‧‧‧單位引線框架形成區域 11‧‧‧Unit lead frame formation area

12‧‧‧單位引線框架 12‧‧‧Unit lead frame

13‧‧‧連接部 13‧‧‧Connecting part

14‧‧‧焊墊 14‧‧‧Solder pad

14a‧‧‧第1焊墊 14a‧‧‧The first pad

14b‧‧‧第2焊墊 14b‧‧‧Second pad

15‧‧‧樹脂部 15‧‧‧Resin Department

15a‧‧‧開縫 15a‧‧‧Slit

15A‧‧‧樹脂 15A‧‧‧Resin

17‧‧‧補強部 17‧‧‧Reinforcement Department

17a‧‧‧厚壁部 17a‧‧‧Thick Wall

17b‧‧‧薄壁部 17b‧‧‧Thin-walled part

18‧‧‧注入部 18‧‧‧Injection Department

18a‧‧‧毛邊 18a‧‧‧ rough edges

19‧‧‧排出部 19‧‧‧Discharge section

19a‧‧‧毛邊 19a‧‧‧Uncut

23‧‧‧LED元件 23‧‧‧LED components

24‧‧‧搭接引線 24‧‧‧Lap leads

25‧‧‧透明樹脂部 25‧‧‧Transparent Resin Department

40‧‧‧模具 40‧‧‧Mould

41‧‧‧上模 41‧‧‧Upper die

41a‧‧‧注入通道 41a‧‧‧Injection channel

41b‧‧‧排出通道 41b‧‧‧Exhaust channel

42‧‧‧下模 42‧‧‧Die

第1A圖是實施形態的引線框架的示意圖及放大圖。 Fig. 1A is a schematic diagram and an enlarged view of the lead frame of the embodiment.

第1B圖是第1A圖的B-B線剖面圖。 Fig. 1B is a sectional view taken along the line B-B in Fig. 1A.

第1C圖是第1A圖的C-C線剖面圖。 Fig. 1C is a cross-sectional view taken along the line C-C in Fig. 1A.

第2A圖是實施形態的附樹脂之引線框架的示意圖及放大圖。 2A is a schematic diagram and an enlarged view of the lead frame with resin of the embodiment.

第2B圖是第2A圖的D-D線剖面圖。 Fig. 2B is a cross-sectional view taken along the line D-D of Fig. 2A.

第2C圖是第2A圖的E-E線剖面圖。 Fig. 2C is a cross-sectional view taken along the line E-E in Fig. 2A.

第3圖是實施形態的附樹脂之引線框架的單位引線框架形成區域11的上表面圖。 FIG. 3 is a top view of the unit lead frame formation area 11 of the lead frame with resin according to the embodiment.

第4A圖是實施形態之變形例1的引線框架及附樹脂之引線框架的示意圖。 Fig. 4A is a schematic diagram of a lead frame and a lead frame with resin according to Modification 1 of the embodiment.

第4B圖是實施形態之變形例2的引線框架及附樹脂之引線框架的示意圖。 Fig. 4B is a schematic diagram of a lead frame and a lead frame with resin according to Modification 2 of the embodiment.

第4C圖是實施形態之變形例3的引線框架及附樹脂之引線框架的示意圖。 Fig. 4C is a schematic diagram of a lead frame and a lead frame with resin according to Modification 3 of the embodiment.

第5A圖是實施形態的附樹脂之引線框架的製造方法的處理流程的說明圖(1)。 Fig. 5A is an explanatory diagram (1) of the process flow of the manufacturing method of the lead frame with resin according to the embodiment.

第5B圖是實施形態的附樹脂之引線框架的製造方法的處理流程的說明圖(2)。 Fig. 5B is an explanatory diagram (2) of the process flow of the manufacturing method of the lead frame with resin according to the embodiment.

第5C圖是實施形態的附樹脂之引線框架的製造方法的處理流程的說明圖(3)。 Fig. 5C is an explanatory diagram (3) of the process flow of the manufacturing method of the lead frame with resin according to the embodiment.

第6A圖是使用了實施形態的附樹脂之引線框架的半導體裝置的製造方法的處理流程的說明圖(1)。 FIG. 6A is an explanatory diagram (1) of the process flow of the manufacturing method of the semiconductor device using the lead frame with resin of the embodiment.

第6B圖是使用了實施形態的附樹脂之引線框架的半導體裝置的製造方法的處理流程的說明圖(2)。 FIG. 6B is an explanatory diagram (2) of the process flow of the manufacturing method of the semiconductor device using the lead frame with resin of the embodiment.

第6C圖是使用了實施形態的附樹脂之引線框架的半導體裝置的製造方法的處理流程的說明圖(3)。 FIG. 6C is an explanatory diagram (3) of the process flow of the manufacturing method of the semiconductor device using the lead frame with resin of the embodiment.

第7圖是實施形態之變形例4的引線框架的放大圖。 Fig. 7 is an enlarged view of the lead frame of Modification 4 of the embodiment.

第8圖是在實施形態的附樹脂之引線框架的製程中所執行的處理之處理步驟的流程圖。 FIG. 8 is a flowchart of the processing steps of the processing executed in the manufacturing process of the lead frame with resin of the embodiment.

第9圖是在實施形態的半導體裝置的製程中所執行的處理之處理步驟的流程圖。 FIG. 9 is a flowchart of the processing procedure of the processing executed in the manufacturing process of the semiconductor device of the embodiment.

以下，參照所附圖面，對本案所揭示的引線框架、附樹脂之引線框架、附樹脂之引線框架的製造方法及半導體裝置的製造方法加以說明。此外，本發明並不被以下所示的實施形態所限定。 Hereinafter, with reference to the drawings, the manufacturing method of the lead frame, the lead frame with resin, the lead frame with resin, and the method of manufacturing a semiconductor device disclosed in this application will be described. In addition, this invention is not limited by embodiment shown below.

〈引線框架及附樹脂之引線框架的概要〉 <Outline of lead frame and lead frame with resin>

首先，一邊參照第1A圖至第4C圖，對實施形態的引線框架1及附樹脂之引線框架2的概要加以說明。第1A圖是實施形態的引線框架1的示意圖及放大圖。 First, referring to FIGS. 1A to 4C, the outline of the lead frame 1 and the lead frame 2 with resin of the embodiment will be described. FIG. 1A is a schematic diagram and an enlarged view of the lead frame 1 of the embodiment.

引線框架1在平面角度看來具有四角框狀的框體10，在該框體10內設有複數個(實施形態為兩個)將複數個單位引線框架12並列成矩陣狀的單位引線框架形成區域11。而且，在單位引線框架12的外周部設有用來將相鄰的單位引線框架12彼此予以連接的連接部13。 The lead frame 1 has a quadrangular frame-shaped frame 10 in a plan view, and a plurality (two in the embodiment) is provided in the frame 10 in which a plurality of unit lead frames 12 are arranged in a matrix form. Area 11. In addition, a connecting portion 13 for connecting adjacent unit lead frames 12 to each other is provided on the outer peripheral portion of the unit lead frame 12.

單位引線框架12具有連接部13及複數個焊墊14。焊墊14具有：可供半導體元件(例如LED(Light Emitting Diode：發光二極體)元件23(參照第6A圖))搭載的第1焊墊14a；以及可供搭接引線24(參照第6A圖)接合的第2焊墊14b。 The unit lead frame 12 has a connecting portion 13 and a plurality of bonding pads 14. The bonding pad 14 has: a first bonding pad 14a for mounting a semiconductor element (for example, an LED (Light Emitting Diode) element 23 (refer to FIG. 6A)); and a bonding lead 24 (refer to FIG. 6A). Figure) The bonded second pad 14b.

而且，第1焊墊14a是藉由連接部13與相鄰的單位引線框架12的第1焊墊14a連接，第2焊墊14b是藉由連接部13與相鄰的單位 引線框架12的第2焊墊14b連接。此外，第1A圖雖未顯示，但是第1焊墊14a亦可藉由連接部13與相鄰的單位引線框架12的第2焊墊14b連接。 Furthermore, the first pad 14a is connected to the first pad 14a of the adjacent unit lead frame 12 via the connecting portion 13, and the second pad 14b is connected to the first pad 14a of the adjacent unit lead frame 12 via the connecting portion 13 2 The pad 14b is connected. In addition, although not shown in FIG. 1A, the first bonding pad 14a may be connected to the second bonding pad 14b of the adjacent unit lead frame 12 through the connecting portion 13.

實施形態的引線框架1是對由銅或銅合金等構成的金屬基板施以蝕刻加工而形成框體10或單位引線框架形成區域11、單位引線框架12等。如第1B圖及第1C圖所示，該蝕刻加工有：對兩面進行蝕刻加工而形成開口部的全蝕刻加工；以及對表面側或背面側進行蝕刻加工而使厚度變薄的半蝕刻加工。 In the lead frame 1 of the embodiment, a metal substrate made of copper, copper alloy, or the like is subjected to etching processing to form a frame body 10, a unit lead frame formation region 11, a unit lead frame 12, and the like. As shown in FIG. 1B and FIG. 1C, the etching process includes a full etching process in which both sides are etched to form an opening, and a half etching process in which the front side or the back side is etched to thin the thickness.

此外，為了使理解更為容易，本案說明書的放大平面圖是在要施以半蝕刻加工的部位畫上一些影線(hatching)，在以相同的厚度進行半蝕刻加工的部位畫上相同的影線。 In addition, in order to make the understanding easier, the enlarged plan view of the specification of this case is to draw some hatching (hatching) on the part to be half-etched, and draw the same hatching on the part that is half-etched with the same thickness. .

此外，實施形態的引線框架1並不限於藉由蝕刻加工來形成，例如亦可藉由衝壓加工(沖孔加工)來形成。 In addition, the lead frame 1 of the embodiment is not limited to being formed by etching, and for example, it may be formed by pressing (punching).

在此，實施形態是如第1A圖所示，並列成矩陣狀的單位引線框架12僅藉由連接部13朝向沿著既定方向A的一個方向連結。換言之，在單位引線框架形成區域11內，在與既定方向A垂直的方向，焊墊14彼此是互相分開的。因此，沿著既定方向A而連結的複數個單位引線框架12的強度會變低。 Here, in the embodiment, as shown in FIG. 1A, the unit lead frames 12 arranged in a matrix are connected only by the connecting portion 13 in one direction along the predetermined direction A. In other words, in the unit lead frame formation region 11, the bonding pads 14 are separated from each other in the direction perpendicular to the predetermined direction A. Therefore, the strength of the plurality of unit lead frames 12 connected along the predetermined direction A becomes low.

因此，實施形態是在單位引線框架形成區域1內設有補強部17。該補強部17至少朝向與既定方向A相交的方向(第1A圖是與既定方向A垂直的方向)延伸。實施形態中，補強部17是以架設在單位引線框架 形成區域11的中央部的方式延伸。藉此，比起未設有補強部17的情況，可縮短所連結的複數個單位引線框架12的長度(實施形態約縮短1/2)。 Therefore, in the embodiment, the reinforcing portion 17 is provided in the unit lead frame formation region 1. The reinforcing portion 17 extends at least in a direction intersecting the predetermined direction A (the direction perpendicular to the predetermined direction A in FIG. 1A). In the embodiment, the reinforcing portion 17 extends so as to span the center portion of the unit lead frame formation region 11. As shown in FIG. Thereby, compared with the case where the reinforcement part 17 is not provided, the length of a plurality of unit lead frames 12 to be connected can be shortened (the embodiment is shortened by about 1/2).

藉此，可抑制沿著既定方向A而連結的複數個單位引線框架12的強度降低。因此，根據實施形態，可抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 Thereby, it is possible to suppress a decrease in the strength of the plurality of unit lead frames 12 connected along the predetermined direction A. Therefore, according to the embodiment, the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be suppressed.

又，實施形態是如第1A圖所示，較佳為將補強部17設成從單位引線框架形成區域11的一端橫跨到另一端。藉此，在單位引線框架形成區域11的整個區域中，可縮短所連結的複數個單位引線框架12的長度。 In addition, in the embodiment, as shown in FIG. 1A, it is preferable to provide the reinforcing portion 17 so as to span from one end of the unit lead frame formation region 11 to the other end. Thereby, in the entire area of the unit lead frame formation area 11, the length of the plurality of unit lead frames 12 connected can be shortened.

因此，根據實施形態，可縮短所連結的複數個單位引線框架12全部的長度，因此在單位引線框架形成區域11的整個區域中可抑制所連結的複數個單位引線框架12之變形。 Therefore, according to the embodiment, the length of all the connected unit lead frames 12 can be shortened. Therefore, the deformation of the connected unit lead frames 12 can be suppressed in the entire area of the unit lead frame formation area 11.

又，實施形態是如第1A圖所示，較佳為補強部17在單位引線框架形成區域11中具有十字形狀。例如，使補強部17朝向與既定方向A垂直的方向延伸一條，並且沿著既定方向A設置一條補強部17。藉此，可使單位引線框架形成區域11整體的強度提升。 In addition, in the embodiment, as shown in FIG. 1A, it is preferable that the reinforcing portion 17 has a cross shape in the unit lead frame formation area 11. For example, one reinforcing portion 17 is extended in a direction perpendicular to the predetermined direction A, and one reinforcing portion 17 is provided along the predetermined direction A. Thereby, the strength of the entire unit lead frame forming area 11 can be improved.

第2A圖是實施形態的附樹脂之引線框架2的示意圖及放大圖。第2A圖所示的附樹脂之引線框架2是例如在製造搭載有LED元件23(參照第6A圖)的半導體裝置3(參照第6C圖)時所使用的引線框架。 2A is a schematic diagram and an enlarged view of the lead frame 2 with resin according to the embodiment. The lead frame 2 with resin shown in FIG. 2A is a lead frame used when manufacturing a semiconductor device 3 (see FIG. 6C) mounted with LED elements 23 (see FIG. 6A), for example.

此外，實施形態顯示出製造搭載有LED元件23的半導體裝置3時所使用的附樹脂之引線框架2，但是亦可適用於製造其他型態的半導體裝置時所使用的附樹脂之引線框架2。 In addition, the embodiment shows the lead frame 2 with resin used when manufacturing the semiconductor device 3 equipped with the LED element 23, but it can also be applied to the lead frame 2 with resin used when manufacturing other types of semiconductor devices.

附樹脂之引線框架2在形成於單位引線框架12內的空隙設有樹脂部15這點與上述引線框架1不同。亦即，附樹脂之引線框架2具備上述引線框架1及樹脂部15。 The lead frame 2 with resin is different from the lead frame 1 described above in that the resin portion 15 is provided in the void formed in the unit lead frame 12. That is, the lead frame 2 with resin includes the lead frame 1 and the resin portion 15 described above.

樹脂部15設在單位引線框架12內(例如複數個焊墊14之間)所形成的空隙，例如，由環氧樹脂或矽氧樹脂、陶瓷樹脂等的熱硬化性樹脂構成。此外，樹脂部15例如亦可由聚醯胺、聚鄰苯二甲醯胺、聚苯硫醚等的熱可塑性樹脂構成。樹脂部15可與連接部13或焊墊14一體成形。 The resin portion 15 is provided in a void formed in the unit lead frame 12 (for example, between a plurality of pads 14), and is made of, for example, a thermosetting resin such as epoxy resin, silicone resin, or ceramic resin. Moreover, the resin part 15 may be comprised from thermoplastic resins, such as polyamide, polyphthalamide, and polyphenylene sulfide, for example. The resin part 15 may be integrally formed with the connection part 13 or the solder pad 14.

在此，實施形態的附樹脂之引線框架2與引線框架1同樣在單位引線框架形成區域11內設有補強部17。藉此，可抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 Here, the lead frame 2 with resin of the embodiment is provided with a reinforcing portion 17 in the unit lead frame formation region 11 similarly to the lead frame 1. Thereby, the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be suppressed.

此外，如第2A圖至第2C圖所示，補強部17較佳為交互設有未經過半蝕刻加工的厚壁部17a；以及背面側經過半蝕刻加工的薄壁部17b。具體而言，在連接部13所連接的部位設置與焊墊14的寬度一致的厚壁部17a，在其他部位設置薄壁部17b。此外，厚壁部17a的寬度不一定要與焊墊14的寬度一致，亦可隨意。 In addition, as shown in FIGS. 2A to 2C, the reinforcing portion 17 is preferably alternately provided with a thick portion 17a that has not been half-etched and a thin portion 17b that has been half-etched on the back side. Specifically, a thick portion 17a corresponding to the width of the pad 14 is provided at a location where the connection portion 13 is connected, and a thin portion 17b is provided at another location. In addition, the width of the thick portion 17a does not necessarily have to be the same as the width of the pad 14, and may be arbitrary.

藉由該厚壁部17a，可穩固地保持所連接的連接部13，因此可更進一步抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 With the thick portion 17a, the connected connection portion 13 can be firmly held, and therefore, the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be further suppressed.

又，藉由薄壁部17b，在形成樹脂部15時，可使構成該樹脂部15的樹脂15A(參照第5B圖)在形成於薄壁部17b之下表面側的間隙流通。因此，在形成樹脂部15時，可使樹脂15A遍佈在整個單位引線框架形成區域11。 In addition, with the thin portion 17b, when the resin portion 15 is formed, the resin 15A (see FIG. 5B) constituting the resin portion 15 can flow through the gap formed on the lower surface side of the thin portion 17b. Therefore, when the resin portion 15 is formed, the resin 15A can be spread over the entire unit lead frame formation area 11.

又，實施形態是如第2A圖及第2B圖所示，較佳為連接部13的背面側經過半蝕刻加工。藉此，可使樹脂15A在形成於連接部13之下表面側的間隙流通，因此在形成樹脂部15時，可使樹脂15A容易地遍佈在整個單位引線框架形成區域11。 In addition, in the embodiment, as shown in FIGS. 2A and 2B, it is preferable that the back side of the connection portion 13 is half-etched. As a result, the resin 15A can flow through the gap formed on the lower surface side of the connecting portion 13. Therefore, when the resin portion 15 is formed, the resin 15A can be easily spread over the entire unit lead frame formation area 11.

又，由於連接部13的背面側經過半蝕刻加工，因此在製造後述半導體裝置3的工序中，利用旋轉刀刃沿著切割線DL(參照第6B圖)切割時，可減少旋轉刀刃的磨損。 In addition, since the back side of the connection portion 13 is half-etched, in the process of manufacturing the semiconductor device 3 described later, when cutting along the cutting line DL (see FIG. 6B) with the rotating blade, the wear of the rotating blade can be reduced.

此外，實施形態顯示出連接部13的背面側經過半蝕刻加工的例子，但是亦可連接部13的表面側經過半蝕刻加工，或是連接部13未經過半蝕刻加工。 In addition, the embodiment shows an example in which the back side of the connecting portion 13 is half-etched, but the front side of the connecting portion 13 may be half-etched, or the connecting portion 13 may not be half-etched.

又，實施形態與上述引線框架1同樣，較佳為補強部17在單位引線框架形成區域11中具有十字形狀。藉此，可使單位引線框架形成區域11整體的強度提升。 In addition, the embodiment is the same as the lead frame 1 described above, and it is preferable that the reinforcing portion 17 has a cross shape in the unit lead frame formation region 11. Thereby, the strength of the entire unit lead frame forming area 11 can be improved.

又，實施形態較佳為由矽氧樹脂來構成樹脂部15。藉此，可使利用附樹脂之引線框架2來製造，並且搭載有會發出高熱的LED元件23的半導體裝置3的耐熱性提升。 In addition, in the embodiment, it is preferable that the resin portion 15 is composed of silicone resin. Thereby, the heat resistance of the semiconductor device 3 which is manufactured using the lead frame 2 with resin and mounted with the LED element 23 which emits high heat can be improved.

此外，由矽氧樹脂來構成樹脂部15的情況，由於使該矽氧樹脂成型後所留下的殘留應力大，因此附樹脂之引線框架2有可能會翹曲。 In addition, when the resin portion 15 is made of silicone resin, since the residual stress left after molding the silicone resin is large, the lead frame 2 with resin may warp.

然而，實施形態中，由於補強部17在單位引線框架形成區域11中具有十字形狀，因此單位引線框架形成區域11整體的強度提升。又，實施形態在藉由既定的模具40(參照第5A圖)形成樹脂部15時，可利用模具40來按壓十字形狀的補強部17。 However, in the embodiment, since the reinforcing portion 17 has a cross shape in the unit lead frame formation region 11, the strength of the entire unit lead frame formation region 11 is improved. In addition, in the embodiment, when the resin portion 15 is formed by a predetermined mold 40 (refer to FIG. 5A), the mold 40 can be used to press the cross-shaped reinforcing portion 17.

再者，實施形態中，在樹脂成形時，補強部17受到模具40的按壓，因此如第2B圖、第2C圖及第3圖所示，在單位引線框架12的上表面側會形成具有既定形狀的樹脂部15，另一方面，在補強部17的上表面側不會形成樹脂部15。 Furthermore, in the embodiment, during resin molding, the reinforcing portion 17 is pressed by the mold 40. Therefore, as shown in FIG. 2B, FIG. 2C, and FIG. On the other hand, the resin portion 15 having the shape of the resin portion 15 is not formed on the upper surface side of the reinforcing portion 17.

亦即，樹脂部15是在補強部17的上表面側形成十字形狀的開縫15a。而且，由於形成有該開縫15a，在單位引線框架形成區域11中可緩和樹脂部15的應力。 In other words, the resin portion 15 is formed with a cross-shaped slit 15 a on the upper surface side of the reinforcing portion 17. Furthermore, since the slit 15a is formed, the stress of the resin portion 15 can be relieved in the unit lead frame formation area 11.

因此，根據實施形態，即使由矽氧樹脂來構成樹脂部15，也可減少附樹脂之引線框架2的翹曲。 Therefore, according to the embodiment, even if the resin portion 15 is made of silicone resin, the warpage of the lead frame 2 with resin can be reduced.

此外，實施形態的該引線框架1及附樹脂之引線框架2中顯示出使補強部17形成十字形狀的例子，但是補強部17不一定限於十字形狀。例如，亦可如第4A圖所示，使補強部17僅朝向與既定方向A相交的方向延伸一條。第4A圖是實施形態之變形例1的引線框架1及附樹脂之引線框架2的示意圖。 In addition, the lead frame 1 and the lead frame 2 with resin of the embodiment show an example in which the reinforcing portion 17 is formed in a cross shape, but the reinforcing portion 17 is not necessarily limited to the cross shape. For example, as shown in FIG. 4A, the reinforcing portion 17 may extend only one line in the direction intersecting the predetermined direction A. FIG. 4A is a schematic diagram of the lead frame 1 and the lead frame 2 with resin of Modification 1 of the embodiment.

藉此，可縮短沿著既定方向A而連結的複數個單位引線框架12的長度，因此可抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 As a result, the length of the plurality of unit lead frames 12 connected along the predetermined direction A can be shortened, and therefore the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be suppressed.

又，如第4B圖所示，亦可使補強部17僅朝向與既定方向A相交的方向並列兩條而延伸。第4B圖是實施形態之變形例2的引線框架1及附樹脂之引線框架2的示意圖。 In addition, as shown in FIG. 4B, the reinforcing portion 17 may only extend in two parallel to the direction intersecting the predetermined direction A. FIG. 4B is a schematic diagram of the lead frame 1 and the lead frame 2 with resin of Modification 2 of the embodiment.

藉此，可更為縮短沿著既定方向A而連結的複數個單位引線框架12的長度，因此可有效地抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 As a result, the length of the plurality of unit lead frames 12 connected along the predetermined direction A can be further shortened, and therefore, the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be effectively suppressed.

又，根據變形例2，即使單位引線框架形成區域11的尺寸變大，也可縮短沿著既定方向A而連結的複數個單位引線框架12的長度。因此，在更大尺寸的引線框架1及附樹脂之引線框架2中也可抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 Furthermore, according to Modification 2, even if the size of the unit lead frame formation region 11 is increased, the length of the plurality of unit lead frames 12 connected along the predetermined direction A can be shortened. Therefore, even in the larger-sized lead frame 1 and the lead frame 2 with resin, the deformation of the plural unit lead frames 12 connected along the predetermined direction A can be suppressed.

此外，變形例2顯示出使補強部17並列兩條而延伸的例子，但是補強部17亦可並列三條以上而延伸。例如，單位引線框架形成區域11的尺寸變大的情況，只要以並列配置的補強部17的間隔形成25mm左右的方式使補強部17並列複數個即可。 In addition, the modification 2 shows an example in which two reinforcing parts 17 are arranged in parallel and extended, but the reinforcing parts 17 may be arranged in parallel and extended in three or more. For example, when the size of the unit lead frame formation region 11 becomes larger, it is only necessary to arrange a plurality of reinforcing parts 17 in parallel so that the interval between the reinforcing parts 17 arranged in parallel is approximately 25 mm.

再者，如第4C圖所示，亦可使補強部17朝向與既定方向A相交的方向延伸兩條，並且沿著既定方向A設置一條補強部17。第4C圖是實施形態之變形例3的引線框架1及附樹脂之引線框架2的示意圖。 Furthermore, as shown in FIG. 4C, two reinforcing portions 17 may be extended in a direction intersecting the predetermined direction A, and one reinforcing portion 17 may be provided along the predetermined direction A. FIG. 4C is a schematic diagram of the lead frame 1 and the lead frame 2 with resin according to Modification 3 of the embodiment.

藉此，可更為縮短沿著既定方向A而連結的複數個單位引線框架12的長度，並且可使單位引線框架形成區域11整體的強度提升。 Thereby, the length of the plurality of unit lead frames 12 connected along the predetermined direction A can be further shortened, and the strength of the entire unit lead frame formation region 11 can be improved.

因此，根據變形例3，可有效地抑制沿著既定方向A而連結的複數個單位引線框架12之變形，而且可使單位引線框架形成區域11整體的強度提升。 Therefore, according to Modification 3, the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be effectively suppressed, and the strength of the entire unit lead frame formation region 11 can be improved.

又，實施形態中是如第1A圖及第2A圖所示，較佳為在各個單位引線框架形成區域11內設置：在形成樹脂部15時，樹脂15A可經 由模具40注入的注入部18；以及樹脂15A的剩餘部分可經由模具40排出的排出部19。 In addition, in the embodiment, as shown in FIGS. 1A and 2A, it is preferable to provide in each unit lead frame forming area 11: when forming the resin portion 15, the resin 15A can be injected through the injection portion 18 of the mold 40; And the discharge part 19 through which the remaining part of the resin 15A can be discharged through the mold 40.

例如，如第1A圖及第2A圖所示，較佳為在單位引線框架形成區域11的一角(圖面中為左上角)設置注入部18，並且在從該注入部18與單位引線框架形成區域11之對角線方向相對向的一角(圖面中為右下角)設置排出部19。關於該注入部18及排出部19的功能容後敘述。 For example, as shown in FIGS. 1A and 2A, it is preferable to provide an injection part 18 at a corner of the unit lead frame formation area 11 (the upper left corner in the figure), and to form an injection part 18 from the injection part 18 and the unit lead frame. A discharge portion 19 is provided at a corner of the area 11 opposite to the diagonal direction (the lower right corner in the figure). The functions of the injection part 18 and the discharge part 19 will be described later.

〈製造方法的詳細〉 <Details of manufacturing method>

接下來，一邊參照第5A圖至第6C圖，一邊對實施形態的附樹脂之引線框架2及半導體裝置3的製造方法詳加說明。第5A圖至第5C圖是從剖面觀察各處理的圖。此外，第5A圖至第5C圖中，左側所記載的圖面表示注入部18附近，右側所記載的圖面表示排出部19附近。 Next, while referring to FIGS. 5A to 6C, the method of manufacturing the lead frame 2 with resin and the semiconductor device 3 of the embodiment will be described in detail. Fig. 5A to Fig. 5C are diagrams of each treatment viewed from a cross section. In addition, in FIGS. 5A to 5C, the drawing on the left side shows the vicinity of the injection portion 18, and the drawing on the right side shows the vicinity of the discharge portion 19.

首先，如第5A圖所示，準備在既定部位經過蝕刻加工的引線框架1。該引線框架1是如第1A圖所示，在單位引線框架形成區域11內的既定位置設有補強部17，並且在既定的兩個角落分別設有注入部18及排出部19。又，如第5A圖所示，注入部18及排出部19為空洞狀。 First, as shown in FIG. 5A, a lead frame 1 that has been etched at a predetermined location is prepared. As shown in FIG. 1A, the lead frame 1 is provided with a reinforcing part 17 at a predetermined position in a unit lead frame formation region 11, and an injection part 18 and a discharge part 19 are respectively provided at two predetermined corners. Moreover, as shown in FIG. 5A, the injection part 18 and the discharge part 19 are hollow.

又，在設於單位引線框架12內的第1焊墊14a及第2焊墊14b的兩面形成有鍍膜21。該鍍膜21的材料可為Ag、Ni、Pd、Au之其中任一種，或是加以組合。 In addition, plating films 21 are formed on both surfaces of the first pad 14a and the second pad 14b provided in the unit lead frame 12. The material of the plating film 21 can be any one of Ag, Ni, Pd, and Au, or a combination thereof.

接下來，將被加工成既定形狀的引線框架1組裝在既定的模具40。模具40具有上模41及下模42，並且以藉由該上模41及下模42從上下夾住引線框架1的方式來組裝。此外，實施形態是以下模42面向焊墊14的搭載面14c的方式組裝。 Next, the lead frame 1 processed into a predetermined shape is assembled in a predetermined mold 40. The mold 40 has an upper mold 41 and a lower mold 42, and is assembled in such a manner that the upper mold 41 and the lower mold 42 clamp the lead frame 1 from above and below. In addition, in the embodiment, the lower mold 42 is assembled so as to face the mounting surface 14c of the pad 14.

組裝該上模41及下模42時，在上模41與引線框架1及下模42與引線框架1之間，為了提升鑄模填充性及脫模性而插入有薄膜43。 When the upper mold 41 and the lower mold 42 are assembled, a film 43 is inserted between the upper mold 41 and the lead frame 1 and the lower mold 42 and the lead frame 1 in order to improve mold filling and mold release properties.

又，在上模41是在既定位置設有注入通道41a及排出通道41b。接下來，將上模41組裝於引線框架1時，使注入通道41a連接於注入部18，使排出通道41b連接於排出部19。 In addition, the upper mold 41 is provided with an injection channel 41a and a discharge channel 41b at predetermined positions. Next, when assembling the upper mold 41 to the lead frame 1, the injection channel 41 a is connected to the injection part 18, and the discharge channel 41 b is connected to the discharge part 19.

又，在配置於注入通道41a與注入部18的連接部、及排出通道41b與排出部19的連接部的薄膜43分別形成有貫穿孔43a、43b。 In addition, through holes 43 a and 43 b are formed in the film 43 arranged at the connection part between the injection channel 41 a and the injection part 18 and the connection part between the discharge channel 41 b and the discharge part 19, respectively.

再者，在下模42形成有：連接於注入部18的凹部42a；連接於排出部19的凹部42b；以及以包圍單位引線框架12之搭載面14c側的方式設置的凹部42c。 Furthermore, the lower mold 42 is formed with a recess 42 a connected to the injection part 18, a recess 42 b connected to the discharge part 19, and a recess 42 c provided so as to surround the mounting surface 14 c side of the unit lead frame 12.

此外，實施形態顯示出注入通道41a為頂部閘極方式的情況，但是注入通道41a亦可為側部閘極方式。 In addition, the embodiment shows that the injection channel 41a is a top gate type, but the injection channel 41a may also be a side gate type.

接下來，如第5B圖所示，使構成樹脂部15的樹脂15A經由注入通道41a、貫穿孔43a及注入部18注入模具40內。接下來，在該模具40內填充有樹脂15A，殘留在引線框架1之空隙的空氣、或是所填充的樹脂15A的剩餘部分會經由排出部19、貫穿孔43b及排出通道41b從模具40被排出。 Next, as shown in FIG. 5B, the resin 15A constituting the resin portion 15 is injected into the mold 40 through the injection channel 41 a, the through hole 43 a, and the injection portion 18. Next, the mold 40 is filled with resin 15A, and the air remaining in the gap of the lead frame 1 or the remaining part of the filled resin 15A is removed from the mold 40 through the discharge portion 19, the through hole 43b, and the discharge channel 41b. discharge.

在此，實施形態中，藉由在注入部18的下部形成凹部42a，樹脂15A暫時留在該凹部42a之後可填充在模具40內，因此可順利地將樹脂15A填充在模具40內。並且，藉由在排出部19的下部形成凹部42b，樹脂15A暫時留在該凹部42b之後可從模具40內被排出，因此可順利地將樹脂15A從模具40內排出。 Here, in the embodiment, by forming the recess 42a at the lower portion of the injection portion 18, the resin 15A can be filled in the mold 40 after temporarily staying in the recess 42a. Therefore, the resin 15A can be smoothly filled in the mold 40. In addition, by forming the recess 42b at the lower portion of the ejection portion 19, the resin 15A can be ejected from the mold 40 after temporarily staying in the recess 42b, so that the resin 15A can be smoothly ejected from the mold 40.

接下來，對填充有樹脂15A的模具40進行既定的熱處理，等樹脂15A硬化之後便形成樹脂部15。 Next, the mold 40 filled with the resin 15A is subjected to a predetermined heat treatment, and the resin portion 15 is formed after the resin 15A is hardened.

接下來，如第5C圖所示，除去上模41及下模42，完成附樹脂之引線框架2。在此，在單位引線框架12中的焊墊14的搭載面14c側係以包圍第1焊墊14a及第2焊墊14b的方式形成有凸部15b。 Next, as shown in FIG. 5C, the upper mold 41 and the lower mold 42 are removed to complete the lead frame 2 with resin. Here, on the mounting surface 14c side of the pad 14 in the unit lead frame 12, a convex portion 15b is formed so as to surround the first pad 14a and the second pad 14b.

又，在注入部18是在形成有凹部42a的部位(也就是注入部18中的焊墊14的搭載面14c側)形成有毛邊18a，在排出部19是在形成有凹部42b的部位(也就是排出部19中的焊墊14的搭載面14c側)形成有毛邊19a。 In addition, in the injection portion 18, a burr 18a is formed in the portion where the recess 42a is formed (that is, on the mounting surface 14c side of the pad 14 in the injection portion 18), and the discharge portion 19 is in the portion where the recess 42b is formed (also That is, a burr 19a is formed on the mounting surface 14c side of the pad 14 in the discharge portion 19).

此外，去除上模41時，抵接於上模41的薄膜43與上模41一起從附樹脂之引線框架2剝離。並且，去除下模42時，抵接於下模42的薄膜43會留在附樹脂之引線框架2。因此，去除上模41及下模42之後，會另外使留在附樹脂之引線框架2的薄膜43剝離。 In addition, when the upper mold 41 is removed, the film 43 abutting on the upper mold 41 is peeled from the lead frame 2 with resin together with the upper mold 41. In addition, when the lower mold 42 is removed, the film 43 abutting on the lower mold 42 remains in the lead frame 2 with resin. Therefore, after the upper mold 41 and the lower mold 42 are removed, the film 43 remaining on the lead frame 2 with resin will be peeled off separately.

接下來，對使用所製作的附樹脂之引線框架2來製造半導體裝置3的工序，一邊參照第6A圖至第6C圖一邊加以說明。第6A圖至第6C圖是從剖面觀察各處理的圖。此外，第6A圖至第6C圖顯示出注入部18附近，而且是將焊墊14的搭載面14c形成上側。 Next, the process of manufacturing the semiconductor device 3 using the manufactured lead frame 2 with resin will be described with reference to FIGS. 6A to 6C. Fig. 6A to Fig. 6C are diagrams in which each process is viewed from a cross section. In addition, FIGS. 6A to 6C show the vicinity of the injection portion 18, and the mounting surface 14c of the pad 14 is formed on the upper side.

首先，如第6A圖所示，在第1焊墊14a的搭載面14c上搭載LED元件23。接下來，將LED元件23的各電極與第1焊墊14a的搭載面14c側的鍍膜21、及第2焊墊14b的搭載面14c側的鍍膜21之間，分別藉由搭接引線24來電性連接。 First, as shown in FIG. 6A, the LED element 23 is mounted on the mounting surface 14c of the first pad 14a. Next, between each electrode of the LED element 23 and the plating film 21 on the mounting surface 14c side of the first bonding pad 14a and the plating film 21 on the mounting surface 14c side of the second bonding pad 14b, calls are made by lap leads 24, respectively. Sexual connection.

在此，假設注入部18或排出部19至少一方不是設在單位引線框架形成區域11而是設在框體10的情況，在將搭接引線24接合之前，要利用既定的按壓輔助具(未圖示)保持框體10時，會有毛邊18a或毛邊19a可能與該按壓輔助具干擾之虞。 Here, it is assumed that at least one of the injection portion 18 or the discharge portion 19 is not provided in the unit lead frame forming area 11 but in the frame body 10. Before bonding the bonding wires 24, a predetermined pressing aid (not shown) (Illustration) When the frame 10 is held, there is a possibility that the burr 18a or the burr 19a may interfere with the pressing aid.

由此，無法充分保持引線框架1，因此會有搭接引線24的接合強度降低的情形。因此，會有半導體裝置3(參照第6C圖)的可靠性降低之虞。 As a result, the lead frame 1 cannot be sufficiently held, and the bonding strength of the overlap lead 24 may decrease. Therefore, the reliability of the semiconductor device 3 (refer to FIG. 6C) may be reduced.

然而，實施形態是將注入部18及排出部19設在單位引線框架形成區域11，因此要將搭接引線24接合時，可以不用去除毛邊18a或毛邊19a而利用按壓輔助具充分保持框體10。因此，根據實施形態，可製造出確保搭接引線24之充分的接合強度的半導體裝置3。 However, in the embodiment, the injection part 18 and the discharge part 19 are provided in the unit lead frame forming area 11. Therefore, when bonding the lap lead 24, the frame body 10 can be fully held by the pressing aid without removing the burr 18a or the burr 19a. . Therefore, according to the embodiment, it is possible to manufacture the semiconductor device 3 that ensures sufficient bonding strength of the bonding wires 24.

又，根據實施形態，要將搭接引線24接合時，由於可省略事先去除毛邊18a、19a的工序，因此可有效地製造半導體裝置3。 Furthermore, according to the embodiment, when bonding the bonding wires 24, the step of removing the burrs 18a and 19a in advance can be omitted, so that the semiconductor device 3 can be efficiently manufactured.

再者，根據實施形態，利用上述按壓輔助具保持附樹脂之引線框架2時，除了框體10之外，連補強部17也可經由形成在樹脂部15的開縫15a直接被按壓。藉此，可更充分地保持附樹脂之引線框架2，因此可製造出確保搭接引線24之更足夠的接合強度的半導體裝置3。 Furthermore, according to the embodiment, when the resin-attached lead frame 2 is held by the above-mentioned pressing aid, in addition to the frame body 10, the continuous reinforcing portion 17 may be directly pressed through the slit 15a formed in the resin portion 15. Thereby, the lead frame 2 with resin can be held more fully, and therefore, the semiconductor device 3 can be manufactured that ensures a more sufficient bonding strength of the overlapping leads 24.

接下來，將製作至此的構造體放置在既定的模具上，利用透明的熱硬化性樹脂進行鑄模處理，藉此如第6B圖所示，在附樹脂之引線框架2的搭載面14c側形成透明樹脂部25。該透明樹脂部25將LED元件23及搭接引線24密封，並且使從LED元件23射出的光穿透過。 Next, the structure produced so far is placed on a predetermined mold, and a transparent thermosetting resin is used for mold processing. As shown in Fig. 6B, a transparent resin-attached lead frame 2 is formed on the mounting surface 14c side. The resin part 25. The transparent resin portion 25 seals the LED element 23 and the bonding wire 24 and allows the light emitted from the LED element 23 to pass through.

接下來，利用旋轉刀刃沿著在相鄰的單位引線框架12彼此之間假想而設的切割線DL切割。藉此如第6C圖所示，依個別的半導體裝置3分割而完成半導體裝置3。 Next, the rotary blade is used to cut along the cutting line DL imaginary between adjacent unit lead frames 12. Thereby, as shown in FIG. 6C, the semiconductor device 3 is divided into individual semiconductor devices 3 to complete the semiconductor device 3.

該半導體裝置3中，凸部15b以包圍LED元件23的方式形成，因此可藉由凸部15b將從LED元件23射出的光反射至上方。因此，根據實施形態，可實現發光效率高的半導體裝置3。 In this semiconductor device 3, the convex part 15b is formed so as to surround the LED element 23, so the light emitted from the LED element 23 can be reflected upward by the convex part 15b. Therefore, according to the embodiment, a semiconductor device 3 with high luminous efficiency can be realized.

接下來，一邊參照第7圖，一邊對實施形態之變形例4的引線框架1加以說明。第7圖是實施形態之變形例4的引線框架1的放大圖。此外，第7圖是在與實施形態相同的部位附上相同的符號，有時會省略重複的說明。 Next, with reference to FIG. 7, the lead frame 1 of the modification 4 of the embodiment will be described. Fig. 7 is an enlarged view of the lead frame 1 of Modification 4 of the embodiment. In addition, in FIG. 7, the same reference numerals are attached to the same parts as in the embodiment, and overlapping descriptions may be omitted.

又，雖未圖示，但是藉由將變形例4的引線框架1如上述組裝在模具40並形成樹脂部15，可製造出變形例4的附樹脂之引線框架2。 In addition, although not shown, by assembling the lead frame 1 of the modification 4 in the mold 40 as described above and forming the resin portion 15, the lead frame 2 with resin of the modification 4 can be manufactured.

變形例4的引線框架1是在表面側沿著框體10形成有凹部10a。該凹部10a是例如對金屬基板的表面側施以半蝕刻加工而形成溝槽狀。 In the lead frame 1 of Modification 4, a recess 10a is formed along the frame body 10 on the surface side. The concave portion 10a is formed in a groove shape by, for example, applying a half-etching process to the surface side of a metal substrate.

根據變形例4，在進行製造上述附樹脂之引線框架2的工序時，藉由將插入在引線框架1的表面與下模42之間的薄膜43推入凹部10a，可抑制樹脂15A漏出到框體10的外側。 According to Modification 4, when the process of manufacturing the lead frame 2 with resin is performed, by pushing the film 43 inserted between the surface of the lead frame 1 and the lower mold 42 into the recess 10a, the resin 15A can be prevented from leaking into the frame. The outer side of the body 10.

變形例4中，凹部10a較佳為形成在框體10的全周。藉此，可有效抑制樹脂15A漏出到框體10的外側。此外，凹部10a並不限於形成在框體10的全周的情況，亦可形成在框體10的一部份。 In Modification 4, the recessed portion 10a is preferably formed on the entire circumference of the frame body 10. As a result, it is possible to effectively prevent the resin 15A from leaking to the outside of the frame 10. In addition, the recess 10a is not limited to the case where it is formed on the entire circumference of the frame body 10, and may be formed in a part of the frame body 10.

又，凹部10a形成在框體10的一部份的情況，凹部10a不限於溝槽狀，亦可以從引線框架1的表面側貫穿至背面的方式形成。 In addition, when the recessed portion 10a is formed in a part of the frame body 10, the recessed portion 10a is not limited to the groove shape, and may be formed to penetrate from the front side of the lead frame 1 to the back side.

又，變形例4是如第7圖所示，較佳為複數個貫穿孔10b沿著溝槽狀的凹部10a並列形成。該貫穿孔10b形成在溝槽狀的凹部10a與在相鄰的單位引線框架12彼此之間假想而設的切割線DL交叉的部位。 In addition, as shown in FIG. 7, in Modification 4, it is preferable that a plurality of through holes 10b are formed in parallel along the groove-shaped recess 10a. The through hole 10b is formed at a location where the groove-shaped recess 10a intersects with the cutting line DL imaginary between adjacent unit lead frames 12.

藉此，在製造上述半導體裝置3的工序中，利用旋轉刀刃沿著切割線DL切割時，可利用貫穿孔10b來進行該旋轉刀刃的定位。又，利用旋轉刀刃沿著切割線DL切割時，可減少旋轉刀刃的磨損。 Thereby, in the process of manufacturing the above-mentioned semiconductor device 3, when the rotary blade is used for cutting along the dicing line DL, the positioning of the rotary blade can be performed using the through hole 10b. In addition, when cutting along the cutting line DL with the rotating blade, the wear of the rotating blade can be reduced.

此外，上述變形例4顯示出溝槽狀的凹部10a形成在引線框架1的表面側的例子，但是溝槽狀的凹部10a亦可形成在引線框架1的背面側。 In addition, the aforementioned modification 4 shows an example in which the groove-shaped recess 10 a is formed on the front side of the lead frame 1, but the groove-shaped recess 10 a may be formed on the back side of the lead frame 1.

〈製程的處理步驟〉 <Processing steps of the manufacturing process>

接下來，對實施形態的附樹脂之引線框架2及半導體裝置3的製程時所執行的處理，一邊參照第8圖及第9圖一邊加以說明。第8圖是實施形態的附樹脂之引線框架2的製程中所執行之處理的處理步驟的流程圖。 Next, the processing performed during the manufacturing process of the lead frame 2 with resin and the semiconductor device 3 of the embodiment will be described with reference to FIGS. 8 and 9. FIG. FIG. 8 is a flowchart of the processing procedure of the processing executed in the manufacturing process of the lead frame 2 with resin according to the embodiment.

首先，準備對既定部位施以蝕刻加工而形成有框體10及單位引線框架形成區域11等的引線框架1(步驟S101)。在該引線框架1是在單位引線框架形成區域11內的既定位置設有補強部17，並且在既定的兩個角落分別設有注入部18及排出部19。 First, the lead frame 1 in which the frame body 10, the unit lead frame formation region 11, etc., are formed by etching a predetermined part is prepared (step S101). In the lead frame 1, a reinforcing part 17 is provided at a predetermined position in a unit lead frame formation region 11, and an injection part 18 and a discharge part 19 are respectively provided at two predetermined corners.

接下來，以模具40(具體而言為上模41)的注入通道41a連接於注入部18，排出通道41b連接於排出部19的方式，將引線框架1組裝在模具40(步驟S102)。 Next, the lead frame 1 is assembled to the mold 40 such that the injection channel 41a of the mold 40 (specifically, the upper mold 41) is connected to the injection part 18 and the discharge channel 41b is connected to the discharge part 19 (step S102).

此外，在步驟S102中，以下模42與焊墊14的搭載面14c相對向的方式進行組裝。又，組裝上模41及下模42時，在上模41與引線框架1及下模42與引線框架1之間，為了提升鑄模填充性及脫模性而插入有薄膜43。 In addition, in step S102, the lower mold 42 is assembled with the mounting surface 14c of the pad 14 facing each other. When the upper mold 41 and the lower mold 42 are assembled, a film 43 is inserted between the upper mold 41 and the lead frame 1 and the lower mold 42 and the lead frame 1 in order to improve mold filling and mold release properties.

接下來，經由上模41的注入通道41a及注入部18，將樹脂15A注入模具40內(步驟S103)。 Next, the resin 15A is injected into the mold 40 through the injection channel 41a of the upper mold 41 and the injection portion 18 (step S103).

接下來，對模具40施以既定的熱處理，使樹脂15A硬化(步驟S104)。藉此，在單位引線框架12內的空隙形成樹脂部15。 Next, a predetermined heat treatment is applied to the mold 40 to harden the resin 15A (step S104). Thereby, the resin portion 15 is formed in the void in the unit lead frame 12.

最後，使模具40從引線框架1脫離(步驟S105)而可得到實施形態的附樹脂之引線框架2。此外，不需要去除使模具40從引線框架1脫離時所形成的毛邊18a、19a。 Finally, the mold 40 is detached from the lead frame 1 (step S105), and the lead frame 2 with resin of the embodiment can be obtained. In addition, it is not necessary to remove the burrs 18a and 19a formed when the mold 40 is detached from the lead frame 1.

第9圖是在實施形態的半導體裝置3的製程中所執行之處理的處理步驟的流程圖。 FIG. 9 is a flowchart of the processing procedure of the processing executed in the manufacturing process of the semiconductor device 3 of the embodiment.

首先，在設於附樹脂之引線框架2的單位引線框架12的焊墊14(具體而言為第1焊墊14a)的搭載面14c上搭載LED元件23(步驟S201)。該LED元件23是例如使用焊錫材料或銀膠、丙烯酸系膠、絕緣膠等固定在焊墊14。 First, the LED element 23 is mounted on the mounting surface 14c of the pad 14 (specifically, the first pad 14a) of the unit lead frame 12 of the lead frame 2 with resin (step S201). The LED element 23 is fixed to the bonding pad 14 using, for example, solder material, silver glue, acrylic glue, insulating glue, or the like.

接下來，在維持不去除形成在注入部18附近的毛邊18a或形成在排出部19附近的毛邊19a的狀態下，利用按壓輔助具來保持附樹脂之引線框架2的框體10(步驟S202)。 Next, while maintaining the burr 18a formed in the vicinity of the injection portion 18 or the burr 19a formed in the vicinity of the discharge portion 19, the frame 10 of the resin-attached lead frame 2 is held by a pressing aid (step S202) .

接下來，將搭接引線24接合在藉由該按壓輔助具所保持的附樹脂之引線框架2上所搭載的LED元件23及焊墊14(步驟S203)。該搭接引線24是例如利用引線接合器等連接於LED元件23或焊墊14。 Next, the bonding wire 24 is bonded to the LED element 23 and the bonding pad 14 mounted on the resin-attached lead frame 2 held by the pressing aid (step S203). The bonding wire 24 is connected to the LED element 23 or the bonding pad 14 by, for example, a wire bonder or the like.

接下來，將製作至此的構造體放置在既定的模具，並利用透明的熱硬化性樹脂進行鑄模處理，藉此在引線框架1的搭載面14c側形成透明樹脂部25(步驟S204)。 Next, the structure produced so far is placed in a predetermined mold, and a transparent thermosetting resin is used for molding, thereby forming a transparent resin portion 25 on the mounting surface 14c side of the lead frame 1 (step S204).

最後，利用旋轉刀刃沿著在相鄰的單位引線框架12彼此之間假想而設的切割線DL切割(步驟S205)，可得到實施形態的半導體裝置3。 Finally, the rotating blade is used to cut along the dicing line DL imaginary between the adjacent unit lead frames 12 (step S205), and the semiconductor device 3 of the embodiment can be obtained.

以上已針對本發明的實施形態加以說明，但是本發明並不限於上述實施形態，只要不脫離其主旨，則可進行各種的變更。例如，上述實施形態顯示出附樹脂之引線框架2所使用的引線框架1，但是實施形態的引線框架1並不限於使用在附樹脂之引線框架2的情況。 The embodiments of the present invention have been described above, but the present invention is not limited to the above-mentioned embodiments, and various changes can be made as long as they do not deviate from the gist. For example, the above embodiment shows the lead frame 1 used for the lead frame 2 with resin, but the lead frame 1 of the embodiment is not limited to the case where the lead frame 2 with resin is used.

又，在上述實施形態中，亦可藉由既定的粗化處理使引線框架1的金屬基板或鍍膜21的表面粗化。藉此，可使引線框架1與樹脂部15的密接性、以及鍍膜21與透明樹脂部25的密接性更為提升。 In addition, in the above-mentioned embodiment, the surface of the metal substrate or the plating film 21 of the lead frame 1 may be roughened by a predetermined roughening treatment. Thereby, the adhesion between the lead frame 1 and the resin portion 15 and the adhesion between the plating film 21 and the transparent resin portion 25 can be further improved.

如以上說明，實施形態的引線框架1係具備框體10、單位引線框架形成區域11及補強部17。框體10以包圍外周部的方式設置。單位引線框架形成區域11係設在框體10內，複數個單位引線框架12並列成矩陣狀，複數個單位引線框架12沿著既定方向A而連結。補強部17係在單位引線框架形成區域11內朝向與既定方向A相交的方向延伸。藉此，可抑制沿著既定方向A而連結的複數個單位引線框架12之變形。 As described above, the lead frame 1 of the embodiment includes the frame body 10, the unit lead frame formation area 11, and the reinforcing portion 17. The frame body 10 is provided so as to surround the outer peripheral part. The unit lead frame formation area 11 is provided in the frame body 10, a plurality of unit lead frames 12 are arranged in a matrix, and the plurality of unit lead frames 12 are connected along a predetermined direction A. The reinforcing portion 17 extends in a direction intersecting the predetermined direction A in the unit lead frame formation region 11. Thereby, the deformation of the plurality of unit lead frames 12 connected along the predetermined direction A can be suppressed.

又，實施形態的引線框架1中，補強部17係以從單位引線框架形成區域11的一端跨到另一端的方式設置。藉此，在單位引線框架形成區域11的整個區域中，可抑制所連結的複數個單位引線框架12之變形。 In addition, in the lead frame 1 of the embodiment, the reinforcing portion 17 is provided so as to span from one end of the unit lead frame formation region 11 to the other end. Thereby, in the entire area of the unit lead frame formation area 11, the deformation of the plurality of connected unit lead frames 12 can be suppressed.

又，實施形態的引線框架1中，補強部17在單位引線框架形成區域11中具有十字形狀。藉此，可使單位引線框架形成區域11整體的強度提升。 In addition, in the lead frame 1 of the embodiment, the reinforcing portion 17 has a cross shape in the unit lead frame formation area 11. Thereby, the strength of the entire unit lead frame forming area 11 can be improved.

又，實施形態的引線框架1中，補強部17是使經過半蝕刻加工的部位(薄壁部17b)、與未經過半蝕刻加工的部位(厚壁部17a)交互設置。藉此，可更進一步抑制沿著既定方向A而連結的複數個單位引線框架12之變形，並且在形成樹脂部15時，可使構成該樹脂部15的樹脂15A遍佈在整個單位引線框架形成區域11。 In addition, in the lead frame 1 of the embodiment, the reinforcing portion 17 is formed by alternately providing a portion that has been half-etched (thin portion 17b) and a portion that has not been half-etched (thick portion 17a). Thereby, the deformation of the plural unit lead frames 12 connected along the predetermined direction A can be further suppressed, and when the resin portion 15 is formed, the resin 15A constituting the resin portion 15 can be spread over the entire unit lead frame formation area 11.

又，實施形態的引線框架1中，在框體10可形成沿著框體10的凹部10a。藉此，可抑制樹脂15A漏到框體10的外側。 In addition, in the lead frame 1 of the embodiment, the frame body 10 may be formed with a recess 10 a along the frame body 10. This can prevent the resin 15A from leaking to the outside of the frame 10.

又，實施形態的附樹脂之引線框架2具備上述引線框架1、以及設在單位引線框架12內所形成的空隙的樹脂部15。藉此，可實現一種抑制了沿著既定方向A而連結的複數個單位引線框架12之變形的附樹脂之引線框架2。 In addition, the lead frame 2 with resin of the embodiment includes the above-mentioned lead frame 1 and the resin portion 15 provided in the void formed in the unit lead frame 12. Thereby, a resin-coated lead frame 2 in which deformation of a plurality of unit lead frames 12 connected along the predetermined direction A is suppressed can be realized.

又，實施形態的附樹脂之引線框架2中，在樹脂部15可在補強部17的上表面側形成開縫15a。藉此，在單位引線框架形成區域11可緩和樹脂部15的應力。 In addition, in the lead frame 2 with resin of the embodiment, the resin portion 15 may be formed with a slit 15 a on the upper surface side of the reinforcing portion 17. Thereby, the stress of the resin portion 15 can be relieved in the unit lead frame formation region 11.

又，實施形態的附樹脂之引線框架2中，樹脂部15由矽氧樹脂構成。藉此，在使用附樹脂之引線框架2而製造並且搭載有會發出高熱的LED元件23的半導體裝置3中，可使耐熱性提升。 In addition, in the lead frame 2 with resin of the embodiment, the resin portion 15 is made of silicone resin. Thereby, in the semiconductor device 3 manufactured using the lead frame 2 with resin and mounted with the LED element 23 which emits high heat, heat resistance can be improved.

又，實施形態的附樹脂之引線框架2中，構成樹脂部15的樹脂15A可經由既定的模具40注入的注入部18、以及樹脂15A的剩餘部分可經由既定的模具40排出的排出部19都是設在單位引線框架形成區域11內。藉此，可製造出確保搭接引線24之足夠的接合強度的半導體裝置3。 In addition, in the lead frame 2 with resin of the embodiment, the resin 15A constituting the resin portion 15 can be injected through the predetermined mold 40 through the injection portion 18, and the remaining part of the resin 15A can be discharged through the predetermined mold 40. It is provided in the unit lead frame formation area 11. Thereby, the semiconductor device 3 can be manufactured that ensures sufficient bonding strength of the overlap lead 24.

又，實施形態的附樹脂之引線框架2的製造方法包含以下工序：將樹脂15A經由既定的模具40注入的注入部18、以及樹脂15A的剩餘部分可經由既定的模具40排出的排出部19皆設在單位引線框架形成區域11內的上述引線框架1，以注入部18連接於模具40的注入通道41a，排出部19連接於模具40的排出通道41b的方式組裝在模具40的工序(步驟S102)；以及經由注入通道41a及注入部18將樹脂15A注入模具40內的工序(步驟S103)。藉此，可製造出一種能製造出確保搭接引縣24之足夠的接合強度的半導體裝置3的附樹脂之引線框架2。 In addition, the method of manufacturing the resin-attached lead frame 2 of the embodiment includes the following steps: the injection portion 18 in which the resin 15A is injected through a predetermined mold 40, and the discharge portion 19 through which the remaining part of the resin 15A can be discharged through the predetermined mold 40. The above-mentioned lead frame 1 provided in the unit lead frame formation region 11 is assembled in the mold 40 such that the injection portion 18 is connected to the injection channel 41a of the mold 40, and the discharge portion 19 is connected to the discharge channel 41b of the mold 40 (step S102 ); and the process of injecting the resin 15A into the mold 40 via the injection channel 41a and the injection portion 18 (step S103). Thereby, it is possible to manufacture a resin-attached lead frame 2 capable of manufacturing a semiconductor device 3 that can ensure sufficient bonding strength for overlapping the leads 24.

又，實施形態的半導體裝置3的製造方法包含：在上述附樹脂之引線框架2的單位引線框架12內搭載半導體元件(LED元件23)的工序(步驟S201)；利用按壓輔助具保持框體10的工序(步驟S202)；以及將搭接引線24接合在所搭載的半導體元件(LED元件23)的工序(步驟S203)。藉此，可製造出確保搭接引線24之足夠的接合強度的半導體裝置3。 In addition, the method of manufacturing the semiconductor device 3 of the embodiment includes: a step of mounting a semiconductor element (LED element 23) in the unit lead frame 12 of the lead frame 2 with resin (step S201); and holding the frame body 10 with a pressing aid The process of (Step S202); and the process of bonding the bonding wire 24 to the mounted semiconductor element (LED element 23) (Step S203). Thereby, the semiconductor device 3 can be manufactured that ensures sufficient bonding strength of the overlap lead 24.

更進一步的效果或變形例可由同業者容易導出。因此，本發明之更廣泛的樣態並不限於如以上所表述並且記載的特定的詳細及代表的實施形態。因此，可在不脫離由所附的申請專利範圍及其均等內容所定義的總括性的發明概念的精神或範圍之下進行各種變更。 Further effects or modifications can be easily derived by the same industry. Therefore, the broader aspects of the present invention are not limited to the specific details and representative embodiments as described and described above. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept defined by the scope of the attached patent application and its equivalent content.

1‧‧‧引線框架 1‧‧‧Lead frame

10‧‧‧框體 10‧‧‧Frame

11‧‧‧單位引線框架形成區域 11‧‧‧Unit lead frame formation area

12‧‧‧單位引線框架 12‧‧‧Unit lead frame

13‧‧‧連接部 13‧‧‧Connecting part

14‧‧‧焊墊 14‧‧‧Solder pad

14a‧‧‧第1焊墊 14a‧‧‧The first pad

14b‧‧‧第2焊墊 14b‧‧‧Second pad

17‧‧‧補強部 17‧‧‧Reinforcement Department

17a‧‧‧厚壁部 17a‧‧‧Thick Wall

17b‧‧‧薄壁部 17b‧‧‧Thin-walled part

18‧‧‧注入部 18‧‧‧Injection Department

19‧‧‧排出部 19‧‧‧Discharge section

Claims (11)

一種引線框架，係具備：框體，係以包圍外周部的方式設置；單位引線框架形成區域，係設在前述框體內供複數個單位引線框架並列成矩陣狀，且複數個前述單位引線框架沿著既定方向而連結；以及補強部，係在前述單位引線框架形成區域內至少朝向與前述既定方向相交的方向延伸。 A lead frame is provided with: a frame body is arranged to surround the outer periphery; a unit lead frame forming area is arranged in the frame body for a plurality of unit lead frames to be arranged in a matrix, and a plurality of the unit lead frames are arranged along the Connected in a predetermined direction; and the reinforcing portion extends at least in a direction intersecting the predetermined direction in the unit lead frame forming area. 如申請專利範圍第1項所述之引線框架，其中，前述補強部係以從前述單位引線框架形成區域的一端跨到另一端的方式設置。 In the lead frame described in the first item of the scope of the patent application, the reinforcing portion is provided so as to span from one end to the other end of the unit lead frame forming area. 如申請專利範圍第1或2項所述之引線框架，其中，前述補強部係在前述單位引線框架形成區域中具有十字形狀。 According to the lead frame described in claim 1 or 2, wherein the reinforcing portion has a cross shape in the formation area of the unit lead frame. 如申請專利範圍第1或2項所述之引線框架，其中，前述補強部係交互設有經過半蝕刻加工的部位、以及未經過半蝕刻加工的部位。 According to the lead frame described in item 1 or 2 of the scope of patent application, the aforementioned reinforcing part is alternately provided with parts that have undergone half-etching and parts that have not been half-etched. 如申請專利範圍第1或2項所述之引線框架，其中，在前述框體形成有沿著前述框體的凹部。 The lead frame described in claim 1 or 2, wherein the frame body is formed with a recessed portion along the frame body. 一種附樹脂之引線框架，具備：申請專利範圍第1至5項中任一項所述之引線框架；以及設在形成於前述單位引線框架內的空隙的樹脂部。 A lead frame with resin, comprising: the lead frame described in any one of items 1 to 5 in the scope of the patent application; and a resin part provided in a void formed in the aforementioned unit lead frame. 如申請專利範圍第6項所述之附樹脂之引線框架，其中，在前述樹脂部且是在前述補強部的上表面側形成有開縫。 The resin-attached lead frame described in claim 6 has a slit formed in the resin part and on the upper surface side of the reinforcing part. 如申請專利範圍第6或7項所述之附樹脂之引線框架，其中，前述樹脂部係由矽氧樹脂構成。 The resin-attached lead frame described in item 6 or 7 of the scope of patent application, wherein the resin part is made of silicone resin. 如申請專利範圍第6或7項所述之附樹脂之引線框架，其中，供構成前述樹脂部的樹脂經由既定的模具注入的注入部、以及供前述樹脂的剩餘部分經由前述既定的模具排出的排出部都設在前述單位引線框架形成區域內。 The resin-attached lead frame described in claim 6 or 7, wherein the resin constituting the resin part is injected through a predetermined mold, and the remaining part of the resin is discharged through the predetermined mold. The discharge parts are all provided in the aforementioned unit lead frame forming area. 一種附樹脂之引線框架的製造方法，包含：將供樹脂經由既定的模具注入的注入部、及供前述樹脂的剩餘部分經由前述既定的模具排出的排出部都設在前述單位引線框架形成區域內的申請專利範圍第1至5項中任一項所述之引線框架，以前述注入部連接於前述模具的注入通道，前述排出部連接於前述模具的排出通道的方式組裝在前述模具的工序；以及將樹脂經由前述注入通道及前述注入部注入前述模具內的工序。 A method for manufacturing a resin-attached lead frame, comprising: placing an injection part for resin injection through a predetermined mold and a discharge part for ejecting the remaining part of the resin through the predetermined mold in the unit lead frame forming area The process of assembling the lead frame described in any one of items 1 to 5 of the scope of patent application to the mold in such a way that the injection part is connected to the injection channel of the mold, and the discharge part is connected to the discharge channel of the mold; And a step of injecting resin into the mold through the injection channel and the injection part. 一種半導體裝置的製造方法，包含：將半導體元件搭載在申請專利範圍第9項所述之附樹脂之引線框架的前述單位引線框架內的工序；利用按壓輔助具保持前述框體的工序；以及將搭接引線接合在所搭載的前述半導體元件的工序。 A method of manufacturing a semiconductor device, comprising: a step of mounting a semiconductor element in the unit lead frame of the lead frame with resin described in claim 9; a step of holding the frame body with a pressing aid; and Lap wire bonding to the mounted semiconductor element.
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