TWI728179B - 具有非等向性介電常數之半導體結構之基於模型之光學量測 - Google Patents
具有非等向性介電常數之半導體結構之基於模型之光學量測 Download PDFInfo
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- TWI728179B TWI728179B TW106129591A TW106129591A TWI728179B TW I728179 B TWI728179 B TW I728179B TW 106129591 A TW106129591 A TW 106129591A TW 106129591 A TW106129591 A TW 106129591A TW I728179 B TWI728179 B TW I728179B
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662381987P | 2016-08-31 | 2016-08-31 | |
| US62/381,987 | 2016-08-31 | ||
| US15/649,843 | 2017-07-14 | ||
| US15/649,843 US10458912B2 (en) | 2016-08-31 | 2017-07-14 | Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201812275A TW201812275A (zh) | 2018-04-01 |
| TWI728179B true TWI728179B (zh) | 2021-05-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106129591A TWI728179B (zh) | 2016-08-31 | 2017-08-30 | 具有非等向性介電常數之半導體結構之基於模型之光學量測 |
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|---|---|
| US (1) | US10458912B2 (enExample) |
| JP (1) | JP6801110B2 (enExample) |
| KR (1) | KR102269517B1 (enExample) |
| CN (1) | CN109643672B (enExample) |
| IL (1) | IL264571B (enExample) |
| TW (1) | TWI728179B (enExample) |
| WO (1) | WO2018044572A1 (enExample) |
Families Citing this family (35)
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| DE102016208264A1 (de) * | 2016-05-13 | 2017-11-16 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Verfahren und Vorrichtung zur Überwachung, insbesondere zur Regelung, eines Schneidprozesses |
| US11156548B2 (en) | 2017-12-08 | 2021-10-26 | Kla-Tencor Corporation | Measurement methodology of advanced nanostructures |
| US11036898B2 (en) | 2018-03-15 | 2021-06-15 | Kla-Tencor Corporation | Measurement models of nanowire semiconductor structures based on re-useable sub-structures |
| US11054250B2 (en) * | 2018-04-11 | 2021-07-06 | International Business Machines Corporation | Multi-channel overlay metrology |
| JP6830464B2 (ja) * | 2018-09-26 | 2021-02-17 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法および記録媒体。 |
| WO2020080758A1 (ko) | 2018-10-15 | 2020-04-23 | 주식회사 고영테크놀러지 | 검사를 위한 장치, 방법 및 명령을 기록한 기록 매체 |
| DE102018220629A1 (de) | 2018-11-29 | 2020-06-04 | Carl Zeiss Smt Gmbh | Spiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage mit einem Spektralfilter in Form einer Gitterstruktur und Verfahren zur Herstellung eines Spektralfilters in Form einer Gitterstruktur auf einem Spiegel |
| CN109580551A (zh) * | 2018-11-30 | 2019-04-05 | 武汉颐光科技有限公司 | 一种傅里叶变换红外穆勒矩阵椭偏仪及其测量方法 |
| US11060846B2 (en) | 2018-12-19 | 2021-07-13 | Kla Corporation | Scatterometry based methods and systems for measurement of strain in semiconductor structures |
| CN111380464B (zh) * | 2018-12-28 | 2021-05-07 | 上海微电子装备（集团）股份有限公司 | 一种光栅尺的安装装置、安装方法、光栅测量系统及光刻机 |
| US11060982B2 (en) * | 2019-03-17 | 2021-07-13 | Kla Corporation | Multi-dimensional model of optical dispersion |
| CN112067559B (zh) * | 2019-06-11 | 2023-06-13 | 南开大学 | 材料光学常数的确定方法、材料数据库的扩展方法及装置 |
| CN110416106B (zh) * | 2019-07-30 | 2022-05-27 | 上海华力集成电路制造有限公司 | Ocd测试图形结构及其制造方法 |
| US11966203B2 (en) * | 2019-08-21 | 2024-04-23 | Kla Corporation | System and method to adjust a kinetics model of surface reactions during plasma processing |
| US11460418B2 (en) | 2019-08-26 | 2022-10-04 | Kla Corporation | Methods and systems for semiconductor metrology based on wavelength resolved soft X-ray reflectometry |
| CN110596011B (zh) * | 2019-08-26 | 2020-12-29 | 华中科技大学 | 一种材料介电张量测量方法 |
| KR20220103713A (ko) * | 2019-11-28 | 2022-07-22 | 에베 그룹 에. 탈너 게엠베하 | 기판 측정 장치 및 방법 |
| US11698251B2 (en) | 2020-01-07 | 2023-07-11 | Kla Corporation | Methods and systems for overlay measurement based on soft X-ray Scatterometry |
| CN111595812B (zh) * | 2020-05-29 | 2021-06-22 | 复旦大学 | 基于动量空间色散关系的关键参数的量测方法和系统 |
| CN114097067B (zh) * | 2020-06-22 | 2025-12-02 | 株式会社日立高新技术 | 尺寸计测装置、半导体制造装置以及半导体装置制造系统 |
| KR102825817B1 (ko) * | 2020-08-28 | 2025-06-30 | 삼성전자주식회사 | 두께 추정 방법 및 공정 제어 방법 |
| US12013355B2 (en) | 2020-12-17 | 2024-06-18 | Kla Corporation | Methods and systems for compact, small spot size soft x-ray scatterometry |
| KR102857866B1 (ko) * | 2021-02-10 | 2025-09-11 | 주식회사 히타치하이테크 | 윤곽선 해석 장치, 처리 조건 결정 시스템, 형상 추정 시스템, 반도체 장치 제조 시스템, 탐색 장치 및 그들에 이용하는 데이터 구조 |
| CN113420260B (zh) * | 2021-07-01 | 2022-10-28 | 深圳市埃芯半导体科技有限公司 | 一种半导体尺寸的测量计算方法、装置及计算机存储介质 |
| CN113643237A (zh) * | 2021-07-13 | 2021-11-12 | 上海华力集成电路制造有限公司 | 一种利用SEM review图像分析晶圆面内CD均一性的方法 |
| JP2024530580A (ja) | 2021-07-26 | 2024-08-23 | ルーマス リミテッド | 内部ファセット間の平行性の光学に基づく検証 |
| TW202311706A (zh) * | 2021-07-26 | 2023-03-16 | 以色列商魯姆斯有限公司 | 用於驗證內部小平面之間的平行度的方法和系統 |
| CN114018820B (zh) * | 2021-09-14 | 2023-04-07 | 深圳市埃芯半导体科技有限公司 | 光学测量方法、装置、系统及存储介质 |
| US12111355B2 (en) * | 2021-11-22 | 2024-10-08 | Onto Innovation Inc. | Semiconductor substrate yield prediction based on spectra data from multiple substrate dies |
| US12322620B2 (en) | 2021-12-14 | 2025-06-03 | Kla Corporation | Reflective waveplates for pupil polarization filtering |
| CN114898824B (zh) * | 2022-03-15 | 2024-12-03 | 上海科技大学 | 使用机器学习构建非标准复杂材料色散模型的方法 |
| US12379672B2 (en) | 2023-05-11 | 2025-08-05 | Kla Corporation | Metrology of nanosheet surface roughness and profile |
| US12372882B2 (en) | 2023-06-30 | 2025-07-29 | Kla Corporation | Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures |
| US12380367B2 (en) | 2023-06-30 | 2025-08-05 | Kla Corporation | Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling |
| KR20250050573A (ko) | 2023-10-06 | 2025-04-15 | 한국과학기술원 | 강유전체 나노구조의 3차원 분극분포 분석 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060290923A1 (en) * | 2005-06-22 | 2006-12-28 | Hiroyuki Nakano | Method and apparatus for detecting defects |
| US20130083320A1 (en) * | 2011-09-27 | 2013-04-04 | Kla-Tencor Corporation | High Throughput Thin Film Characterization And Defect Detection |
| US8798966B1 (en) * | 2007-01-03 | 2014-08-05 | Kla-Tencor Corporation | Measuring critical dimensions of a semiconductor structure |
| TW201511155A (zh) * | 2013-06-26 | 2015-03-16 | Kla Tencor Corp | 用於製程監視及良率管理之計算的電效能度量 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0720216B1 (en) | 1994-12-29 | 2001-10-17 | AT&T Corp. | Linewidth metrology of integrated circuit structures |
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US6734967B1 (en) | 1995-01-19 | 2004-05-11 | Kla-Tencor Technologies Corporation | Focused beam spectroscopic ellipsometry method and system |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US5969273A (en) | 1998-02-12 | 1999-10-19 | International Business Machines Corporation | Method and apparatus for critical dimension and tool resolution determination using edge width |
| US5943122A (en) | 1998-07-10 | 1999-08-24 | Nanometrics Incorporated | Integrated optical measurement instruments |
| US6031614A (en) * | 1998-12-02 | 2000-02-29 | Siemens Aktiengesellschaft | Measurement system and method for measuring critical dimensions using ellipsometry |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US7139083B2 (en) | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| US6895075B2 (en) | 2003-02-12 | 2005-05-17 | Jordan Valley Applied Radiation Ltd. | X-ray reflectometry with small-angle scattering measurement |
| WO2003054475A2 (en) | 2001-12-19 | 2003-07-03 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
| US6816570B2 (en) | 2002-03-07 | 2004-11-09 | Kla-Tencor Corporation | Multi-technique thin film analysis tool |
| US7330279B2 (en) * | 2002-07-25 | 2008-02-12 | Timbre Technologies, Inc. | Model and parameter selection for optical metrology |
| US7414721B1 (en) * | 2002-12-23 | 2008-08-19 | Lsi Corporation | In-situ metrology system and method for monitoring metalization and other thin film formation |
| US7515253B2 (en) * | 2005-01-12 | 2009-04-07 | Kla-Tencor Technologies Corporation | System for measuring a sample with a layer containing a periodic diffracting structure |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| JP4363368B2 (ja) * | 2005-06-13 | 2009-11-11 | 住友電気工業株式会社 | 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法 |
| WO2007049259A1 (en) * | 2005-10-24 | 2007-05-03 | Optical Metrology Patents Limited | An optical measurement apparatus and method |
| US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| US7324193B2 (en) * | 2006-03-30 | 2008-01-29 | Tokyo Electron Limited | Measuring a damaged structure formed on a wafer using optical metrology |
| US7755764B2 (en) | 2007-01-26 | 2010-07-13 | Kla-Tencor Corporation | Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry |
| US7907264B1 (en) | 2007-09-07 | 2011-03-15 | Kla-Tencor Corporation | Measurement of thin film porosity |
| US7929667B1 (en) | 2008-10-02 | 2011-04-19 | Kla-Tencor Corporation | High brightness X-ray metrology |
| US8577820B2 (en) | 2011-03-04 | 2013-11-05 | Tokyo Electron Limited | Accurate and fast neural network training for library-based critical dimension (CD) metrology |
| US9228943B2 (en) | 2011-10-27 | 2016-01-05 | Kla-Tencor Corporation | Dynamically adjustable semiconductor metrology system |
| US10088413B2 (en) * | 2011-11-21 | 2018-10-02 | Kla-Tencor Corporation | Spectral matching based calibration |
| US10354929B2 (en) * | 2012-05-08 | 2019-07-16 | Kla-Tencor Corporation | Measurement recipe optimization based on spectral sensitivity and process variation |
| US10013518B2 (en) * | 2012-07-10 | 2018-07-03 | Kla-Tencor Corporation | Model building and analysis engine for combined X-ray and optical metrology |
| US9581430B2 (en) | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
| US8860937B1 (en) | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
| US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
| US10101670B2 (en) | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
| US9875946B2 (en) | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
| US9383661B2 (en) | 2013-08-10 | 2016-07-05 | Kla-Tencor Corporation | Methods and apparatus for determining focus |
| US10935893B2 (en) | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
| US10624612B2 (en) * | 2014-06-05 | 2020-04-21 | Chikayoshi Sumi | Beamforming method, measurement and imaging instruments, and communication instruments |
| US10072921B2 (en) * | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
-
2017
- 2017-07-14 US US15/649,843 patent/US10458912B2/en active Active
- 2017-08-16 JP JP2019531857A patent/JP6801110B2/ja active Active
- 2017-08-16 CN CN201780052569.4A patent/CN109643672B/zh active Active
- 2017-08-16 KR KR1020197009076A patent/KR102269517B1/ko active Active
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-
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- 2019-01-31 IL IL264571A patent/IL264571B/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060290923A1 (en) * | 2005-06-22 | 2006-12-28 | Hiroyuki Nakano | Method and apparatus for detecting defects |
| US8798966B1 (en) * | 2007-01-03 | 2014-08-05 | Kla-Tencor Corporation | Measuring critical dimensions of a semiconductor structure |
| US20130083320A1 (en) * | 2011-09-27 | 2013-04-04 | Kla-Tencor Corporation | High Throughput Thin Film Characterization And Defect Detection |
| TW201511155A (zh) * | 2013-06-26 | 2015-03-16 | Kla Tencor Corp | 用於製程監視及良率管理之計算的電效能度量 |
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| CN109643672A (zh) | 2019-04-16 |
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| IL264571A (en) | 2019-02-28 |
| IL264571B (en) | 2021-06-30 |
| CN109643672B (zh) | 2020-10-27 |
| JP6801110B2 (ja) | 2020-12-16 |
| WO2018044572A1 (en) | 2018-03-08 |
| US10458912B2 (en) | 2019-10-29 |
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