TWI725003B - Substrate cleaning apparatus - Google Patents

Substrate cleaning apparatus Download PDF

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Publication number
TWI725003B
TWI725003B TW104137139A TW104137139A TWI725003B TW I725003 B TWI725003 B TW I725003B TW 104137139 A TW104137139 A TW 104137139A TW 104137139 A TW104137139 A TW 104137139A TW I725003 B TWI725003 B TW I725003B
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Taiwan
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substrate
cleaning device
gas
protective cover
cleaning
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TW104137139A
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Chinese (zh)
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TW201628727A (en
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深谷孝一
前田幸次
石橋知淳
中野央二郎
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日商荏原製作所股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

本發明提供一種進行雙流體洗淨時，可抑制液滴從護蓋彈回，防止液滴再附著於基板表面之基板洗淨裝置。基板洗淨裝置(18)具備：保持基板W之基板保持機構(1)；使保持於基板保持機構(1)之基板W旋轉的基板旋轉機構(2)；使雙流體噴流朝向基板W表面噴出之雙流體噴嘴(46)；配置於基板周圍之護蓋；及使護蓋旋轉之護蓋旋轉機構。護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 The present invention provides a substrate cleaning device that can inhibit droplets from rebounding from a protective cover and prevent the droplets from reattaching to the surface of the substrate when performing two-fluid cleaning. The substrate cleaning device (18) is equipped with: a substrate holding mechanism (1) for holding the substrate W; a substrate rotating mechanism (2) for rotating the substrate W held by the substrate holding mechanism (1); and a two-fluid jet is sprayed toward the surface of the substrate W The two-fluid nozzle (46); a protective cover arranged around the substrate; and a protective cover rotating mechanism that rotates the protective cover. The cover rotation mechanism makes the cover and the substrate rotate in the same rotation direction.

Description

基板洗淨裝置 Substrate cleaning device

本發明係關於一種使用雙流體噴流來洗淨基板表面之基板洗淨裝置。 The present invention relates to a substrate cleaning device that uses dual-fluid jets to clean the surface of the substrate.

過去以非接觸方式洗淨基板表面之洗淨方法，習知係使用雙流體噴流(2FJ)之洗淨方法。該洗淨方法係使微小液滴(噴霧)隨高速氣體從雙流體噴嘴朝向基板表面噴出而撞擊，利用該液滴向基板表面撞擊所產生之撞擊波來除去(洗淨)基板表面的微粒子等(例如參照專利文獻1)。 In the past, the conventional cleaning method for cleaning the surface of the substrate in a non-contact manner is a cleaning method using a two-fluid jet (2FJ). The cleaning method is to make tiny droplets (spray) hit with the high-speed gas ejected from the two-fluid nozzle toward the surface of the substrate, and use the impact wave generated by the droplets to hit the surface of the substrate to remove (clean) particles on the surface of the substrate. (For example, refer to Patent Document 1).

然而，雙流體洗淨使雙流體噴流撞擊基板表面來除去基板表面之微小粒子時，基板表面之液滴因旋轉之基板的離心力及雙流體洗淨之側噴流而飛濺到周圍。飛濺之液滴附著於洗淨模組之外壁時，可能造成洗淨模組中之污染或再度附著於基板上。因此，過去之裝置為了抑制液滴之飛濺，係在旋轉之基板周圍設置護蓋，以護蓋阻擋朝向外壁飛濺之液滴，並從護蓋下部排出裝置外部，防止對基板再度附著，以抑制瑕疵(Defect)。 However, when the two-fluid cleaning causes the two-fluid jet to hit the surface of the substrate to remove fine particles on the substrate surface, the droplets on the substrate surface are splashed around due to the centrifugal force of the rotating substrate and the side jet of the two-fluid cleaning. When the splashed droplets adhere to the outer wall of the cleaning module, it may cause contamination in the cleaning module or reattach to the substrate. Therefore, in order to suppress the splashing of liquid droplets in the past device, a protective cover is set around the rotating substrate to block the splashing liquid droplets toward the outer wall and discharge from the lower part of the protective cover to the outside of the device to prevent re-adhesion to the substrate to suppress Defect.

【先前技術文獻】【Prior Technical Literature】 【專利文獻】【Patent Literature】

[專利文獻1]日本特開2005-294819號公報 [Patent Document 1] Japanese Patent Application Publication No. 2005-294819

但是，過去之裝置設置於基板周圍的護蓋被固定。雙流體洗淨時從雙流體噴嘴噴出之液滴速度(流速)係高速，且側噴流速度(液滴之徑向飛濺速度)亦係高速(參照第七圖)。例如，一般雙流體洗淨時從雙流體噴嘴噴出之液滴速度Vo係250~350m/秒，側噴流之速度Vf(液滴之徑向飛濺速度)係300~400m/秒。再者，高速雙流體洗淨或超高速雙流體洗淨時從雙流體噴嘴噴出之液滴速度Vo係350~400m/秒，側噴流之速度Vf(液滴之徑向飛濺速度)係700~1200m/秒。 However, in the past device, the cover provided around the substrate is fixed. During two-fluid cleaning, the droplet velocity (flow velocity) ejected from the two-fluid nozzle is high, and the side jet velocity (radial splash velocity of droplets) is also high (refer to Figure 7). For example, in general two-fluid cleaning, the droplet velocity Vo ejected from the two-fluid nozzle is 250~350m/sec, and the velocity Vf (radial splash velocity of the droplet) is 300~400m/sec. Furthermore, during high-speed two-fluid cleaning or ultra-high-speed two-fluid cleaning, the droplet velocity Vo ejected from the two-fluid nozzle is 350~400m/sec, and the velocity of the side jet Vf (the radial splash velocity of the droplet) is 700~ 1200m/sec.

如此，雙流體洗淨時側噴流速度(液滴之徑向飛濺速度)非常高，撞擊到護蓋之液滴可能彈回而再度附著基板表面。特別是高速雙流體洗淨或超高速雙流體洗淨時更有可能再度附著基板表面。 In this way, the side jet velocity (the radial splash velocity of the droplet) during the two-fluid cleaning is very high, and the droplet hitting the cover may bounce back and reattach to the substrate surface. Especially during high-speed two-fluid cleaning or ultra-high-speed two-fluid cleaning, it is more likely to reattach to the substrate surface.

本發明係鑑於上述問題者，目的為提供一種進行雙流體洗淨時，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面之基板洗淨裝置。 In view of the above-mentioned problems, the present invention aims to provide a substrate cleaning device that can prevent droplets from rebounding from the protective cover and prevent the droplets from re-attaching to the surface of the substrate during two-fluid cleaning.

本發明之基板洗淨裝置具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於基板保持機構之基板旋轉；雙流體噴嘴，其係使雙流體噴流朝向基板表面噴出；護蓋，其係配置於基板周圍；及護蓋旋轉機構，其係使護蓋旋轉；護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 The substrate cleaning device of the present invention includes: a substrate holding mechanism that holds the substrate; a substrate rotation mechanism that rotates the substrate held in the substrate holding mechanism; a two-fluid nozzle that ejects a two-fluid jet toward the surface of the substrate; and protects The cover is arranged around the substrate; and the cover rotation mechanism is used to rotate the cover; the cover rotation mechanism rotates the cover and the substrate in the same rotation direction.

採用該構成進行雙流體洗淨時，即使基板表面之液滴因基板旋轉產生之離心力及雙流體洗淨產生的側噴流而飛濺撞擊到護蓋，由於護蓋係與基板在同一旋轉方向旋轉，因此，與護蓋不旋轉時比較，可使液滴 之撞擊速度減低。藉此，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When using this structure for two-fluid cleaning, even if the droplets on the substrate surface are splashed and hit the cover due to the centrifugal force generated by the rotation of the substrate and the side jet generated by the two-fluid cleaning, the cover is rotated in the same rotation direction as the substrate. Therefore, compared with when the cover does not rotate, it can make the droplets The impact speed is reduced. Thereby, it is possible to prevent the droplets from rebounding from the protective cover and prevent the droplets from re-attaching to the surface of the substrate.

又，本發明之基板洗淨裝置具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於基板保持機構之基板旋轉；搖動洗淨機構，其係搖動基板表面而洗淨；護蓋，其係配置於基板周圍；及護蓋旋轉機構，其係使護蓋旋轉；護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 In addition, the substrate cleaning device of the present invention includes: a substrate holding mechanism that holds the substrate; a substrate rotation mechanism that rotates the substrate held in the substrate holding mechanism; and a shaking cleaning mechanism that shakes the surface of the substrate to clean; The protective cover is arranged around the substrate; and the protective cover rotating mechanism is used to rotate the protective cover; the protective cover rotating mechanism rotates the protective cover and the substrate in the same rotation direction.

採用該構成進行搖動洗淨時，即使供給之大流量沖洗水因基板旋轉而產生之離心力而從基板表面成為液滴飛濺而撞擊到護蓋，由於護蓋與基板在同一旋轉方向旋轉，因此與護蓋不旋轉時比較，可使液滴之撞擊速度減低。藉此，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When washing by shaking with this structure, even if the supplied large flow of flushing water splashes from the surface of the substrate as droplets due to the centrifugal force generated by the rotation of the substrate and hits the protective cover, the protective cover and the substrate rotate in the same direction of rotation. Comparing when the cover is not rotating, the impact speed of the droplets can be reduced. Thereby, it is possible to prevent the droplets from rebounding from the protective cover and prevent the droplets from re-attaching to the surface of the substrate.

又，本發明之基板洗淨裝置具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於基板保持機構之基板旋轉；超音波洗淨機構，其係使用超音波洗淨基板表面；護蓋，其係配置於基板周圍；及護蓋旋轉機構，其係使護蓋旋轉；護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 In addition, the substrate cleaning device of the present invention includes: a substrate holding mechanism that holds the substrate; a substrate rotation mechanism that rotates the substrate held by the substrate holding mechanism; and an ultrasonic cleaning mechanism that uses ultrasonic waves to clean the substrate The surface; the protective cover, which is arranged around the substrate; and the protective cover rotating mechanism, which makes the protective cover rotate; the protective cover rotating mechanism makes the protective cover and the substrate rotate in the same direction of rotation.

採用該構成進行超音波洗淨時，即使供給之大流量沖洗水因基板旋轉而產生之離心力而從基板表面成為液滴飛濺而撞擊到護蓋，由於護蓋與基板在同一旋轉方向旋轉，因此與護蓋不旋轉時比較，可使液滴之撞擊速度減低。藉此，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When using this structure to perform ultrasonic cleaning, even if the supplied large flow of flushing water splashes from the substrate surface as droplets due to the centrifugal force generated by the rotation of the substrate and hits the protective cover, the protective cover and the substrate rotate in the same direction of rotation, so Compared with when the cover is not rotating, the impact speed of droplets can be reduced. Thereby, it is possible to prevent the droplets from rebounding from the protective cover and prevent the droplets from re-attaching to the surface of the substrate.

又，本發明之基板洗淨裝置，護蓋旋轉機構亦可以與基板同一之角速度使護蓋旋轉。 In addition, in the substrate cleaning device of the present invention, the cover rotating mechanism can also rotate the cover at the same angular velocity as the substrate.

採用該構成時，由於護蓋係以與基板同一之角速度旋轉，因此與護蓋以與基板不同之角速度旋轉時(例如護蓋未旋轉時)比較，可使液滴之撞擊速度減低。 With this configuration, since the cover rotates at the same angular velocity as the substrate, the impact velocity of droplets can be reduced compared to when the cover rotates at an angular velocity different from that of the substrate (for example, when the cover is not rotating).

又，本發明之基板洗淨裝置亦可將基板外端與護蓋前端之徑向距離A設定在2mm~80mm的範圍，將基板與護蓋前端之高度方向距離B設定在3mm~50mm的範圍，將基板外端與護蓋內周面之徑向距離C設定在2mm~80mm的範圍。 In addition, the substrate cleaning device of the present invention can also set the radial distance A between the outer end of the substrate and the front end of the cover in the range of 2mm~80mm, and set the height direction distance B between the substrate and the front end of the cover in the range of 3mm~50mm. , Set the radial distance C between the outer end of the substrate and the inner circumferential surface of the cover in the range of 2mm~80mm.

採用該構成時，因為將護蓋對基板配置於適切位置，所以可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 With this configuration, since the protective cover is arranged at an appropriate position for the substrate, it is possible to prevent droplets from rebounding from the protective cover and prevent the droplets from re-attaching to the surface of the substrate.

又，本發明之基板洗淨裝置亦可將基板外端與護蓋前端之徑向距離A設定為2mm，將基板與護蓋前端之高度方向距離B設定為15mm，將基板外端與護蓋內周面之徑向距離C設定為19mm。 In addition, the substrate cleaning device of the present invention can also set the radial distance A between the outer end of the substrate and the front end of the cover to 2mm, and set the height direction distance B between the substrate and the front end of the cover to 15mm, and set the outer end of the substrate and the cover The radial distance C of the inner peripheral surface is set to 19mm.

採用該構成時，因為將護蓋對基板配置於最佳位置，所以可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 With this configuration, since the protective cover is arranged at an optimal position with respect to the substrate, it is possible to prevent droplets from rebounding from the protective cover and prevent the droplets from adhering to the substrate surface again.

又，本發明之基板洗淨裝置，亦可以朝向基板旋轉方向之上游側噴出雙流體噴流的方式，以指定角度傾斜地設置雙流體噴嘴。 In addition, the substrate cleaning device of the present invention may also spray a two-fluid jet toward the upstream side of the rotation direction of the substrate, and the two-fluid nozzle may be installed obliquely at a predetermined angle.

採用該構成時，由於係從雙流體噴嘴朝向基板旋轉方向之上游側(抗拒基板之旋轉)噴出雙流體噴流，因此雙流體噴流對旋轉之基板的相對速度上昇，可使洗淨性能提高。 With this configuration, since the two-fluid jet is ejected from the two-fluid nozzle toward the upstream side of the substrate rotation direction (to resist the rotation of the substrate), the relative speed of the two-fluid jet to the rotating substrate is increased, and the cleaning performance can be improved.

又，本發明之基板洗淨裝置亦可具備：機箱，其係收容基板 洗淨裝置；一對氣體流入口，其係設於機箱之壁面，而使氣體流入機箱內；及氣體排出口，其係設於機箱之下部，排出機箱內之氣體；一對氣體流入口設於機箱相對之壁面，配置於比基板高之位置。 In addition, the substrate cleaning device of the present invention may also be provided with: a cabinet that houses the substrate Washing device; a pair of gas inlets, which are provided on the wall of the cabinet, allowing gas to flow into the cabinet; and a gas outlet, which is provided at the lower part of the cabinet to discharge the gas in the cabinet; a pair of gas inlets are provided On the opposite wall of the chassis, it is arranged at a position higher than the base plate.

採用該構成時，氣體係從設於機箱相對之壁面的一對氣體流入口流入機箱內。由於一對氣體流入口配置於比基板高之位置，因此，從一對氣體流入口流入之氣體在機箱內之中央部於基板上方相遇形成下降氣流，而從機箱下部之氣體排出口排出。此時，機箱內之液滴或噴霧亦隨下降氣流而從機箱下部的氣體排出口排出。藉此，可抑制液滴或噴霧在機箱內蔓延，並可抑制因液滴或噴霧再度附著而造成瑕疵(Defect)。 With this configuration, the gas system flows into the cabinet from a pair of gas inlets provided on the opposite wall surfaces of the cabinet. Since the pair of gas inlets are arranged higher than the substrate, the gas flowing in from the pair of gas inlets meets above the substrate at the center of the cabinet to form a downward flow, and is discharged from the gas outlet at the lower part of the cabinet. At this time, the liquid droplets or sprays in the cabinet are also discharged from the gas outlet in the lower part of the cabinet along with the descending airflow. Thereby, the spread of droplets or sprays in the cabinet can be suppressed, and defects caused by the reattachment of droplets or sprays can be suppressed.

又，本發明之基板洗淨裝置，亦可在基板洗淨裝置之上游側及下游側分別鄰接設有基板搬送區，氣體流入口將從基板搬送區之送風單元送風的氣體導入機箱內。 In addition, the substrate cleaning device of the present invention may be provided with a substrate transfer area adjacent to the upstream side and downstream side of the substrate cleaning device, and the gas inflow port may introduce the gas blown from the blower unit of the substrate transfer area into the cabinet.

採用該構成時，可利用鄰接於基板洗淨裝置之基板搬送區的送風單元，抑制液滴或噴霧在機箱內蔓延。 With this configuration, the blower unit adjacent to the substrate transfer area of the substrate cleaning device can be used to prevent droplets or spray from spreading in the cabinet.

又，本發明之基板洗淨裝置亦可在氣體流入口連接氣體供給管線，其係用於在機箱內供給氣體。 In addition, the substrate cleaning device of the present invention may also be connected to a gas supply line at the gas inlet, which is used to supply gas in the cabinet.

採用該構成時，可藉由從氣體供給管線供給之氣體抑制液滴或噴霧在機箱內蔓延。因此，例如，即使無法利用鄰接於基板洗淨裝置之基板搬送區的送風單元時，仍可抑制液滴或噴霧在機箱內蔓延。 With this configuration, the gas supplied from the gas supply line can prevent droplets or spray from spreading in the cabinet. Therefore, even when the blower unit adjacent to the substrate transfer area of the substrate cleaning device cannot be used, for example, it is possible to prevent droplets or spray from spreading in the cabinet.

又，本發明之基板洗淨裝置，雙流體噴嘴亦可以導電性構件構成。 In addition, in the substrate cleaning device of the present invention, the two-fluid nozzle may also be constituted by a conductive member.

採用該構成時，由於雙流體噴嘴之前端部係以導電性構件構 成，因此可抑制從雙流體噴嘴噴出之液滴的帶電量。藉此，可抑制基板表面因雙流體洗淨產生之帶電量，可抑制因帶電之微粒子附著於基板而造成瑕疵(Defect)。 When this structure is adopted, the front end of the two-fluid nozzle is made of a conductive member. Therefore, the charge amount of the droplets ejected from the two-fluid nozzle can be suppressed. Thereby, the amount of charge generated by the two-fluid cleaning of the substrate surface can be suppressed, and defects caused by the adhesion of charged particles to the substrate can be suppressed.

又，本發明之基板洗淨裝置亦可具備藥劑供給噴嘴，其係在基板上供給具有導電性之藥劑。 In addition, the substrate cleaning device of the present invention may also be equipped with a medicine supply nozzle, which supplies a medicine having conductivity on the substrate.

採用該構成時，由於係從藥劑供給噴嘴供給具有導電性之藥劑，因此，可抑制基板表面之帶電量。藉此，可抑制基板表面因雙流體洗淨產生之帶電量，可抑制因帶電之微粒子附著於基板而造成瑕疵(Defect)。 With this configuration, since the drug with conductivity is supplied from the drug supply nozzle, the amount of charge on the surface of the substrate can be suppressed. Thereby, the amount of charge generated by the two-fluid cleaning of the substrate surface can be suppressed, and defects caused by the adhesion of charged particles to the substrate can be suppressed.

採用本發明而進行雙流體洗淨時，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When the present invention is used for two-fluid cleaning, the droplets can be prevented from rebounding from the protective cover, and the droplets can be prevented from reattaching to the substrate surface.

1:基板保持機構 1: substrate holding mechanism

2:馬達(基板旋轉機構、護蓋旋轉機構) 2: Motor (substrate rotation mechanism, cover rotation mechanism)

3:旋轉護蓋 3: Rotate the cover

10:外殼 10: Shell

12:裝載埠 12: load port

14a~14d:研磨單元 14a~14d: Grinding unit

16:第一洗淨單元 16: The first cleaning unit

18:第二洗淨單元(基板洗淨裝置) 18: The second cleaning unit (substrate cleaning device)

20:乾燥單元 20: Drying unit

22:第一基板搬送機器人 22: The first substrate transfer robot

24:基板搬送單元 24: Substrate transport unit

26:第二基板搬送機器人 26: The second substrate transfer robot

28:第三基板搬送機器人 28: The third substrate transfer robot

30:控制部 30: Control Department

40:洗淨槽 40: washing tank

42:支撐軸 42: Support shaft

44:搖動臂 44: swing arm

46:流體噴嘴(雙流體噴嘴) 46: Fluid nozzle (two-fluid nozzle)

50:載氣供給管線 50: Carrier gas supply line

52:洗淨液供給管線 52: Detergent supply line

54:馬達 54: Motor

60:筆型洗淨工具 60: Pen type cleaning tool

62:沖洗液供給噴嘴 62: Flushing fluid supply nozzle

64:藥劑供給噴嘴 64: Medication supply nozzle

70:夾盤 70: Chuck

71:台座 71: pedestal

72:載台 72: Stage

73:支撐軸 73: Support shaft

74:排出孔 74: discharge hole

75:固定護蓋 75: fixed cover

80:局部排氣機構，機箱 80: Local exhaust mechanism, chassis

81:通氣板 81: Ventilation Board

82:基板搬送區 82: substrate transfer area

83:基板搬送區 83: substrate transfer area

84:送風單元 84: Air supply unit

85:氣體流入口 85: gas inlet

86:氣體排出口 86: Gas outlet

87:氣體供給管線 87: Gas supply line

88:氣體供給埠 88: Gas supply port

89:閥門 89: Valve

90:超音波洗淨機 90: Ultrasonic washing machine

101:導線 101: Wire

O:中心 O: Center

W:基板 W: substrate

第一圖係顯示具備本發明實施形態之基板洗淨裝置(基板洗淨單元)的基板處理裝置全部構成之俯視圖。 The first figure is a plan view showing the overall configuration of a substrate processing apparatus equipped with a substrate cleaning apparatus (substrate cleaning unit) according to an embodiment of the present invention.

第二圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 The second figure is a perspective view showing the structure of the substrate cleaning device (substrate cleaning unit) according to the embodiment of the present invention.

第三圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的構成俯視圖。 The third figure is a plan view showing the structure of the substrate cleaning device (substrate cleaning unit) according to the embodiment of the present invention.

第四圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的構成側視圖。 The fourth figure is a side view showing the configuration of the substrate cleaning device (substrate cleaning unit) according to the embodiment of the present invention.

第五圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的重要部分說明圖。 Fig. 5 is an explanatory diagram showing the important part of the substrate cleaning device (substrate cleaning unit) according to the embodiment of the present invention.

第六圖係本發明實施形態之基板洗淨裝置(基板洗淨單元)中雙流體洗淨的液滴之撞擊速度說明圖。 The sixth figure is an explanatory diagram of the impact velocity of droplets of two-fluid cleaning in the substrate cleaning device (substrate cleaning unit) of the embodiment of the present invention.

第七圖係雙流體洗淨之側噴流的速度說明圖。 The seventh diagram is an explanatory diagram of the speed of the side jet in the two-fluid cleaning.

第八圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Figure 8 is a perspective view showing the structure of a substrate cleaning device (substrate cleaning unit) of another embodiment.

第九圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Fig. 9 is a perspective view showing the structure of a substrate cleaning device (substrate cleaning unit) of another embodiment.

第十圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Figure 10 is a perspective view showing the structure of a substrate cleaning device (substrate cleaning unit) of another embodiment.

第十一圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Figure 11 is a perspective view showing the structure of a substrate cleaning device (substrate cleaning unit) of another embodiment.

第十二圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的重要部分俯視圖。 Fig. 12 is a plan view of important parts of a substrate cleaning device (substrate cleaning unit) of another embodiment.

第十三圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Fig. 13 is a side view of an important part of a substrate cleaning device (substrate cleaning unit) of another embodiment.

第十四圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Figure 14 is a side view of an important part of a substrate cleaning device (substrate cleaning unit) with an airflow improving function.

第十五圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Figure 15 is a side view of an important part of a substrate cleaning device (substrate cleaning unit) with an airflow improving function.

第十六圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元)的其他例之重要部分側視圖。 Figure 16 is a side view of important parts showing another example of a substrate cleaning device (substrate cleaning unit) with an airflow improving function.

第十七圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元) 的其他例之重要部分側視圖。 The seventeenth figure shows a substrate cleaning device (substrate cleaning unit) with airflow improvement function Side view of important parts of other cases.

第十八圖係顯示具備抑制帶電功能之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Figure 18 is a side view of the important part of the substrate cleaning device (substrate cleaning unit) with the function of suppressing charging.

以下，使用圖式說明本發明實施形態之基板洗淨裝置。本實施形態係例示用於半導體晶圓之洗淨等的基板洗淨裝置之情況。 Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention will be described using drawings. This embodiment exemplifies the case of a substrate cleaning device used for cleaning semiconductor wafers and the like.

第一圖係顯示具備本實施形態之基板洗淨裝置(基板洗淨單元)的基板處理裝置全部構成之俯視圖。如第一圖所示，基板處理裝置具備：概略矩形狀之外殼10；及裝載貯存多數個半導體晶圓等之基板的基板匣盒之裝載埠12。裝載埠12鄰接於外殼10配置。裝載埠12中可搭載開放式匣盒、標準製造接口(SMIF(Standard Manufacturing Interface))盒、或前開式晶圓傳送盒(FOUP(Front Opening Unified Pod))。SMIF、FOUP係在內部收納基板匣盒，藉由以分隔壁覆蓋，可保持與外部空間獨立之環境的密閉容器。 The first figure is a plan view showing the overall configuration of a substrate processing apparatus equipped with a substrate cleaning apparatus (substrate cleaning unit) of this embodiment. As shown in the first figure, the substrate processing apparatus includes: a roughly rectangular housing 10; and a loading port 12 for loading a substrate cassette storing a plurality of substrates such as semiconductor wafers. The loading port 12 is arranged adjacent to the housing 10. The loading port 12 can be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) box, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers that store substrate cassettes inside and are covered with partition walls to maintain an environment independent of the external space.

外殼10之內部收容有：複數個(第一圖之例係4個)研磨單元14a~14d；洗淨研磨後之基板的第一洗淨單元16及第二洗淨單元18；及使洗淨後之基板乾燥的乾燥單元20。研磨單元14a~14d沿著基板處理裝置之長度方向排列，洗淨單元16、18及乾燥單元20亦沿著基板處理裝置之長度方向排列。本發明之基板洗淨裝置適用於第二洗淨單元18。 The inside of the housing 10 contains: a plurality of (four in the example of the first figure) polishing units 14a-14d; a first cleaning unit 16 and a second cleaning unit 18 for cleaning the polished substrate; and The drying unit 20 is followed by the drying of the substrate. The polishing units 14a-14d are arranged along the length direction of the substrate processing device, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the length direction of the substrate processing device. The substrate cleaning device of the present invention is suitable for the second cleaning unit 18.

如第一圖所示，在被裝載埠12、位於該裝載埠12側之研磨單元14a及乾燥單元20所包圍的區域配置有第一基板搬送機器人22。又，與研磨單元14a~14d平行地配置有基板搬送單元24。第一基板搬送機器人22從裝 載埠12接收研磨前之基板而送交基板搬送單元24，並且從乾燥單元20接收乾燥後之基板而送回裝載埠12。基板搬送單元24搬送從第一基板搬送機器人22所接收之基板，並在與各研磨單元14a~14d之間進行基板的交接。 As shown in the first figure, the first substrate transfer robot 22 is arranged in an area surrounded by the load port 12, the polishing unit 14a located on the side of the load port 12, and the drying unit 20. Moreover, the substrate conveyance unit 24 is arrange|positioned in parallel with the polishing unit 14a-14d. The first substrate transfer robot 22 from the loading The loading port 12 receives the substrate before polishing and sends it to the substrate transport unit 24, and receives the dried substrate from the drying unit 20 and sends it back to the loading port 12. The substrate transfer unit 24 transfers the substrate received from the first substrate transfer robot 22, and transfers the substrate to and from the polishing units 14a to 14d.

在第一洗淨單元16與第二洗淨單元18之間配置有在與此等各單元16、18之間進行基板交接的第二基板搬送機器人26。又，在第二洗淨單元18與乾燥單元20之間配置有在與此等各單元18、20之間進行基板交接的第三基板搬送機器人28。 Between the first cleaning unit 16 and the second cleaning unit 18, a second substrate transfer robot 26 that transfers substrates to and from each of these units 16 and 18 is arranged. In addition, a third substrate transfer robot 28 for transferring substrates between the second cleaning unit 18 and the drying unit 20 is arranged between these units 18 and 20.

再者，外殼10內部配置有控制基板處理裝置之各機器的動作之控制部30。該控制部30亦具備控制第二洗淨單元(基板洗淨裝置)18之動作的功能。 Furthermore, a control unit 30 that controls the operation of each device of the substrate processing apparatus is arranged inside the housing 10. The control unit 30 also has a function of controlling the operation of the second cleaning unit (substrate cleaning device) 18.

本實施形態之第一洗淨單元16係使用在洗淨液存在下，對基板表裡兩面摩擦滾筒狀延伸之滾筒洗淨構件來洗淨基板的滾筒洗淨單元。該第一洗淨單元(滾筒洗淨單元)16係以併用對洗淨液施加約1MHz之超音波，使洗淨液因振動加速度產生之作用力作用於附著在基板表面的微粒子之超音波振盪洗淨的方式構成。 The first cleaning unit 16 of this embodiment is a roller cleaning unit that uses a roller cleaning member extending in a roller shape against both the front and back surfaces of the substrate in the presence of a cleaning solution to clean the substrate. The first cleaning unit (roller cleaning unit) 16 is used in combination to apply ultrasonic waves of about 1 MHz to the cleaning liquid, so that the force generated by the vibration acceleration of the cleaning liquid acts on the ultrasonic oscillation of the fine particles attached to the surface of the substrate. The way of washing is constituted.

又，第二洗淨單元18係使用本發明之基板洗淨裝置。又，乾燥單元20係使用保持基板，從移動之噴嘴噴出IPA蒸汽而使基板乾燥，進一步高速旋轉而藉由離心力使基板乾燥之自旋乾燥單元。另外，洗淨部亦可將洗淨單元16、18形成上下兩階配置之上下兩階構造。此時，洗淨部具有上下兩階之基板處理單元。 In addition, the second cleaning unit 18 uses the substrate cleaning device of the present invention. In addition, the drying unit 20 uses a spin drying unit that holds the substrate, sprays IPA vapor from a moving nozzle to dry the substrate, and further rotates at a high speed to dry the substrate by centrifugal force. In addition, in the washing section, the washing units 16 and 18 may be arranged in an up-and-down two-stage configuration, and an upper and lower two-stage structure. At this time, the cleaning section has a substrate processing unit with two stages up and down.

第二圖係本實施形態之基板洗淨裝置(基板洗淨單元)的立體圖，第三圖係本實施形態之基板洗淨裝置(基板洗淨單元)的俯視圖。 The second figure is a perspective view of the substrate cleaning device (substrate cleaning unit) of this embodiment, and the third figure is a plan view of the substrate cleaning device (substrate cleaning unit) of this embodiment.

如第二圖及第三圖所示，本實施形態之基板洗淨裝置(第二洗淨單元)18具備：圍繞基板W周圍之洗淨槽40；直立設於該處理槽40側方而旋轉自如之支撐軸42；及在該支撐軸42上端連結基部而水平方向延伸之搖動臂44。在洗淨槽40中，基板W係以夾盤等保持，並藉由夾盤等之旋轉而旋轉的方式構成。在搖動臂44之自由端(前端)上下活動自如地安裝有流體噴嘴(雙流體噴嘴)46。 As shown in the second and third figures, the substrate cleaning device (second cleaning unit) 18 of this embodiment is provided with a cleaning tank 40 surrounding the substrate W; standing upright on the side of the processing tank 40 and rotating A free support shaft 42; and a swing arm 44 that is connected to the base at the upper end of the support shaft 42 and extends in the horizontal direction. In the washing tank 40, the substrate W is held by a chuck or the like, and is configured to rotate by the rotation of the chuck or the like. A fluid nozzle (two-fluid nozzle) 46 is movably installed at the free end (front end) of the swing arm 44 up and down.

流體噴嘴46上連接有：供給氮氣(N2)等載氣之載氣供給管線50；與供給純水或二氧化碳(CO2)氣體溶解水等之洗淨液的洗淨液供給管線52；藉由使供給於流體噴嘴46內部之氮氣等載氣與純水或二氧化碳氣體溶解水等洗淨液從流體噴嘴46高速噴出，生成洗淨液於載氣中以微小液滴(噴霧)而存在的雙流體噴流。藉由使該流體噴嘴46生成之雙流體噴流朝向旋轉中的基板W表面噴出而撞擊，可利用微小液滴對基板表面撞擊產生之撞擊波來除去(洗淨)基板表面的微粒子等。 The fluid nozzle 46 is connected with a carrier gas supply line 50 for supplying carrier gas such as nitrogen (N 2 ); and a cleaning liquid supply line 52 for supplying cleaning liquid such as pure water or carbon dioxide (CO 2) gas dissolved water; The carrier gas such as nitrogen and cleaning liquid such as pure water or carbon dioxide gas-dissolved water supplied to the inside of the fluid nozzle 46 are ejected from the fluid nozzle 46 at a high speed, and the cleaning liquid is generated as tiny droplets (spray) in the carrier gas. Two-fluid jet. By causing the two-fluid jet generated by the fluid nozzle 46 to be ejected toward the surface of the rotating substrate W and collide, the impact wave generated by the impact of the micro droplets on the substrate surface can be used to remove (clean) particles on the substrate surface.

支撐軸42連結於馬達54，其係作為藉由使支撐軸42旋轉，以該支撐軸42為中心而使搖動臂44搖動之驅動機構。 The support shaft 42 is connected to the motor 54 and serves as a driving mechanism that swings the swing arm 44 by rotating the support shaft 42 with the support shaft 42 as the center.

本例係在搖動臂44前端上下移動自如且旋轉自如地安裝有例如由PVA海綿構成的筆型洗淨工具60。再者，位於洗淨槽40之側上方，配置有在以夾盤等保持而旋轉中之基板W表面供給沖洗液的沖洗液供給噴嘴62；及供給藥劑之藥劑供給噴嘴64。藉由以指定之按壓力使筆型洗淨工具60的下端接觸於旋轉中之基板W表面，而且藉由搖動臂44之搖動使筆型洗淨工具60移動，同時在基板W表面供給沖洗液或藥劑，可進行基板W表面之接觸洗淨。另外，上述基板W表面之接觸洗淨係依需要而進行之處理，未 必需要實施。 In this example, a pen-type cleaning tool 60 made of, for example, a PVA sponge is attached to the tip of the swing arm 44 so as to move up and down and rotate freely. Furthermore, located on the upper side of the washing tank 40, a rinsing liquid supply nozzle 62 for supplying rinsing liquid on the surface of the rotating substrate W held by a chuck or the like, and a medicine supply nozzle 64 for supplying medicine are arranged. The lower end of the pen-shaped cleaning tool 60 is brought into contact with the surface of the rotating substrate W by a designated pressing force, and the pen-shaped cleaning tool 60 is moved by the shaking of the swing arm 44, and at the same time, a rinse liquid is supplied to the surface of the substrate W Or medicines can be used to clean the surface of the substrate W by contact. In addition, the contact cleaning of the surface of the above-mentioned substrate W is a treatment performed as needed. Must be implemented.

如第三圖所示，流體噴嘴46隨著搖動臂44之搖動，從偏置位置A通過基板W之中心O的上方位置及從該中心O離開指定間隔之變位點B的上方位置，而沿著圓弧狀之移動軌跡移動至基板W外周部外方的洗淨結束位置C，來進行基板W表面之洗淨。該洗淨時，係朝向旋轉中之基板W表面，使洗淨液在載氣中以微小液滴(噴霧)而存在之雙流體噴流從流體噴嘴46噴出。另外，第三圖顯示流體噴嘴46位於變位點B之上方位置的狀態。 As shown in the third figure, the fluid nozzle 46 follows the swing of the swing arm 44 from the offset position A through the upper position of the center O of the substrate W and the upper position of the displacement point B separated from the center O by a specified interval, and The surface of the substrate W is cleaned by moving to the cleaning end position C outside the outer periphery of the substrate W along the arc-shaped movement track. During this cleaning, the two-fluid jets of the cleaning liquid existing in the carrier gas as tiny droplets (sprays) are sprayed from the fluid nozzle 46 toward the surface of the rotating substrate W. In addition, the third figure shows a state where the fluid nozzle 46 is positioned above the displacement point B.

以下，參照圖式更詳細說明基板洗淨裝置(基板洗淨單元)之構成。第四圖係基板洗淨裝置(基板洗淨單元)之側視圖。 Hereinafter, the structure of the substrate cleaning device (substrate cleaning unit) will be described in more detail with reference to the drawings. The fourth figure is a side view of the substrate cleaning device (substrate cleaning unit).

如第四圖所示，基板洗淨裝置具備：水平保持基板W之基板保持機構1；經由基板保持機構1使基板W在其中心軸周圍旋轉之馬達(旋轉機構)2；及配置於基板W周圍之旋轉護蓋3。 As shown in the fourth figure, the substrate cleaning device includes: a substrate holding mechanism 1 that horizontally holds a substrate W; a motor (rotating mechanism) 2 that rotates the substrate W around its central axis via the substrate holding mechanism 1; and is arranged on the substrate W Surrounding the rotating protective cover 3.

基板保持機構1具有：握持基板W周緣部之複數個夾盤70；固定此等夾盤70之圓形台座71；支撐該台座71之載台72；及支撐該載台72之中空狀的支撐軸73。此時，台座71、載台72、支撐軸73配置於同軸上。旋轉護蓋3固定於載台72之端部，載台72與旋轉護蓋亦配置於同軸上。又，保持於夾盤70之基板W與旋轉護蓋3位於同軸上。 The substrate holding mechanism 1 has: a plurality of chucks 70 for holding the peripheral portion of the substrate W; a circular pedestal 71 for fixing the chucks 70; a carrier 72 for supporting the pedestal 71; and a hollow-shaped carrier for supporting the carrier 72 Support shaft 73. At this time, the pedestal 71, the carrier 72, and the support shaft 73 are arranged coaxially. The rotating protective cover 3 is fixed to the end of the carrier 72, and the carrier 72 and the rotating protective cover are also coaxially arranged. In addition, the substrate W held by the chuck 70 and the rotating protective cover 3 are coaxially located.

在支撐軸73之外周面連結有馬達2。馬達2之扭力傳達至支撐軸73，藉此保持於夾盤70之基板W旋轉。此時，基板W與旋轉護蓋一體旋轉，兩者之相對速度為0。另外，亦可在基板W與旋轉護蓋3之間有若干速度差。 The motor 2 is connected to the outer peripheral surface of the support shaft 73. The torque of the motor 2 is transmitted to the support shaft 73, thereby holding the substrate W on the chuck 70 to rotate. At this time, the substrate W and the rotating cover rotate integrally, and the relative speed between the two is zero. In addition, there may be a slight speed difference between the substrate W and the rotating cover 3.

如此，可藉由同一個旋轉機構(馬達2)使基板W與旋轉護蓋3旋轉。此時，可使基板W與旋轉護蓋3以同一速度旋轉。使基板W與旋轉 護蓋3以同一速度旋轉者，是指使基板W與旋轉護蓋3在同一方向以同一角速度旋轉，不包含彼此在相反方向旋轉。該旋轉機構(馬達2)相當於本發明之基板旋轉機構及護蓋旋轉機構。另外，基板W與旋轉護蓋3亦可分別藉由不同之旋轉機構旋轉。 In this way, the substrate W and the rotating cover 3 can be rotated by the same rotating mechanism (motor 2). At this time, the substrate W and the rotating guard 3 can be rotated at the same speed. Make the substrate W and rotate The fact that the protective cover 3 rotates at the same speed means that the substrate W and the rotating protective cover 3 are rotated in the same direction and at the same angular speed, and does not include rotating in opposite directions to each other. This rotation mechanism (motor 2) corresponds to the substrate rotation mechanism and the cover rotation mechanism of the present invention. In addition, the substrate W and the rotating cover 3 can also be rotated by different rotating mechanisms.

又，如第四圖所示，載台72上形成有複數個排出孔74。排出孔74例如係在旋轉護蓋3之周方向延伸的長孔。從流體噴嘴46供給之洗淨液與載氣或周圍環境氣體(通常係空氣)一起通過該排出孔74而排出。本實施形態之排氣量控制在1~3m3/分鐘的範圍。並藉由控制供氣量比排氣量低，而適切排出基板洗淨裝置(基板洗淨單元)內之環境氣體。藉此，可使液滴隨氣流而適切排出，可抑制液滴在基板上飛濺。再者，在旋轉護蓋3之外側設有固定護蓋75。該固定護蓋75構成不旋轉。 Moreover, as shown in the fourth figure, a plurality of discharge holes 74 are formed in the stage 72. The discharge hole 74 is, for example, a long hole extending in the circumferential direction of the rotating cover 3. The cleaning liquid supplied from the fluid nozzle 46 is discharged through the discharge hole 74 together with carrier gas or ambient gas (usually air). The exhaust volume of this embodiment is controlled in the range of 1~3m 3 /min. And by controlling the air supply volume to be lower than the exhaust volume, the ambient air in the substrate cleaning device (substrate cleaning unit) is appropriately discharged. Thereby, the droplets can be appropriately discharged with the airflow, and the splashing of the droplets on the substrate can be suppressed. Furthermore, a fixed protective cover 75 is provided on the outer side of the rotating protective cover 3. The fixed cover 75 is configured not to rotate.

第五圖係基板洗淨裝置(基板洗淨單元)之重要部分說明圖。本實施形態應將基板外端與旋轉護蓋前端之徑向距離A設定在2mm~80mm的範圍，將基板與旋轉護蓋前端之高度方向距離B設定在3mm~50mm的範圍，基板外端與旋轉護蓋內周面之徑向距離C設定在2mm~80mm的範圍。例如，將基板外端與旋轉護蓋前端之徑向距離A設定為2mm，將基板與旋轉護蓋前端之高度方向距離B設定為15mm，將基板外端與旋轉護蓋內周面之徑向距離C設定為19mm。 Fig. 5 is an explanatory diagram of important parts of the substrate cleaning device (substrate cleaning unit). In this embodiment, the radial distance A between the outer end of the substrate and the tip of the rotating cover should be set in the range of 2mm~80mm, and the height direction distance B between the substrate and the tip of the rotating cover should be set in the range of 3mm~50mm. The radial distance C of the inner peripheral surface of the rotating cover is set in the range of 2mm~80mm. For example, set the radial distance A between the outer end of the substrate and the front end of the rotating cover to 2mm, and set the height-direction distance B between the substrate and the front end of the rotating cover to 15mm, and set the radial distance between the outer end of the substrate and the inner peripheral surface of the rotating cover The distance C is set to 19 mm.

就如以上構成之基板洗淨裝置，說明其動作。 The operation of the substrate cleaning device constructed as above will be described.

基板處理裝置係將從裝載埠12內之基板匣盒取出的基板表面搬送至研磨單元14a~14d之任何一個實施研磨。而後，以第一洗淨單元(滾筒洗淨單元)16洗淨研磨後之基板表面後，以使用雙流體噴流之第二洗淨 單元(基板洗淨單元)18進一步洗淨。以該第二洗淨單元18(基板洗淨單元)洗淨基板表面時，控制流體噴嘴46之移動速度，而且使雙流體噴流朝向旋轉中之基板W表面噴出。 The substrate processing device conveys the surface of the substrate taken out from the substrate cassette in the loading port 12 to any one of the polishing units 14a-14d to perform polishing. Then, after the first cleaning unit (roller cleaning unit) 16 is used to clean the surface of the polished substrate, a second cleaning using a two-fluid jet is used. The unit (substrate cleaning unit) 18 is further cleaned. When the second cleaning unit 18 (substrate cleaning unit) is used to clean the surface of the substrate, the moving speed of the fluid nozzle 46 is controlled, and the two-fluid jet is ejected toward the surface of the rotating substrate W.

本實施形態係使以第一洗淨單元16滾筒洗淨後搬入第二洗淨單元18的基板旋轉，而且從沖洗液供給噴嘴62在基板表面供給數秒(例如3秒)沖洗液進行基板表面之沖洗洗淨，從藥劑供給噴嘴64噴射藥劑於基板表面，而且使筆型洗淨工具60以指定次數(例如2~3次)掃瞄來筆型洗淨基板表面後，可同樣在第二洗淨單元18內立即開始使用雙流體噴流之洗淨。 In this embodiment, the substrate, which is cleaned by the roller of the first cleaning unit 16 and transferred into the second cleaning unit 18, is rotated, and the rinsing liquid is supplied from the rinsing liquid supply nozzle 62 to the surface of the substrate for several seconds (for example, 3 seconds) to carry out the surface of the substrate. Rinse and wash, spray the medicine from the medicine supply nozzle 64 on the surface of the substrate, and make the pen-type cleaning tool 60 scan the substrate surface in a specified number of times (for example, 2~3 times). The cleaning unit 18 immediately starts to use the two-fluid jet to clean.

使用雙流體噴流之基板表面的洗淨，係藉由使搖動臂44以指定次數(例如1~4次)搖動，而使噴出雙流體噴流之流體噴嘴46在旋轉中的基板上方移動來進行。搖動臂44之角速度，換言之流體噴嘴46之移動速度係從容許處理之時間及次數算出。另外，使用雙流體噴流洗淨基板表面時之基板的旋轉速度，不需要與使用筆型洗淨工具60洗淨基板表面時之基板的旋轉速度一致。 The cleaning of the substrate surface using the two-fluid jet is performed by shaking the swing arm 44 a predetermined number of times (for example, 1 to 4 times), and the fluid nozzle 46 that ejects the two-fluid jet is moved above the rotating substrate. The angular velocity of the swing arm 44, in other words, the moving velocity of the fluid nozzle 46 is calculated from the allowable processing time and number of times. In addition, the rotation speed of the substrate when the two-fluid jet is used to clean the surface of the substrate does not need to be the same as the rotation speed of the substrate when the pen-type cleaning tool 60 is used to clean the surface of the substrate.

而後，從第二洗淨單元18取出洗淨後之基板，搬入乾燥單元20使其自旋乾燥，然後將乾燥後之基板送回裝載埠12的基板匣盒內。 Then, the cleaned substrate is taken out from the second cleaning unit 18, carried into the drying unit 20 for spin drying, and then the dried substrate is returned to the substrate cassette of the loading port 12.

採用本實施形態之基板洗淨裝置，於雙流體洗淨時，即使基板表面之液滴藉由基板旋轉而產生的離心力及藉由雙流體洗淨產生之側噴流而飛濺撞擊到旋轉護蓋，由於旋轉護蓋與基板在同一旋轉方向旋轉，因此與護蓋不旋轉時比較，可使液滴之撞擊速度減低。藉此，可抑制液滴從旋轉護蓋彈回，可防止液滴再度附著於基板表面。 With the substrate cleaning device of this embodiment, during two-fluid cleaning, even if the droplets on the substrate surface are splashed and hit the rotating cover by the centrifugal force generated by the rotation of the substrate and the side jet generated by the two-fluid cleaning, Since the rotating protective cover and the substrate rotate in the same rotation direction, the impact speed of the droplets can be reduced compared with when the protective cover is not rotating. Thereby, it is possible to prevent the droplets from rebounding from the rotating cover, and it is possible to prevent the droplets from being attached to the surface of the substrate again.

此時，由於旋轉護蓋與基板以同一角速度旋轉，因此與旋轉護蓋與基板以不同角速度旋轉時(例如護蓋不旋轉時)比較，可使液滴之撞擊速度減低。 At this time, since the rotating shield and the substrate rotate at the same angular velocity, the impact speed of the droplets can be reduced compared to when the rotating shield and the substrate rotate at different angular velocities (for example, when the shield does not rotate).

例如第六圖所示，固定護蓋情況下(護蓋不旋轉時)液滴之撞擊速度V為V1(=r1ω)，對於有時液滴(以大的相對速度撞擊護蓋之液滴)逆氣流飛濺於基板上，採用旋轉護蓋情況下(特別是旋轉護蓋與基板以同一角速度旋轉情況下)，液滴之撞擊速度V為V1-V2(=r1ω-r2ω≒0)，可減低液滴之撞擊速度。此時，液滴(以小的相對速度撞擊護蓋之液滴)可隨氣流從下部導出。另外，此處，r1係基板W之半徑，r2係旋轉護蓋內周面之半徑。又，ω係基板W與旋轉護蓋之角速度。 For example, as shown in Figure 6, when the protective cover is fixed (when the protective cover is not rotating), the impact velocity V of the droplet is V 1 (=r 1 ω). (Liquid droplet) the counter air flow splashes on the substrate. When the rotating cover is used (especially when the rotating cover and the substrate rotate at the same angular velocity), the impact velocity V of the droplet is V 1 -V 2 (=r 1 ω- r 2 ω≒0), which can reduce the impact velocity of droplets. At this time, the droplet (the droplet hitting the cover with a small relative velocity) can be led out from the lower part with the airflow. In addition, here, r 1 is the radius of the substrate W, and r 2 is the radius of the inner peripheral surface of the rotating cover. In addition, ω is the angular velocity between the substrate W and the rotating cover.

又，本實施形態如第五圖所示，因為旋轉護蓋對基板W配置於最佳位置，所以可抑制液滴從旋轉護蓋彈回，可防止液滴再度附著於基板表面。 In addition, in this embodiment, as shown in FIG. 5, since the rotating cover is arranged at the optimal position with respect to the substrate W, it is possible to prevent droplets from rebounding from the rotating cover and to prevent the droplets from adhering to the surface of the substrate again.

以上，係藉由例示說明本發明之實施形態，不過本發明之範圍不限定於此等，在申請專利範圍中記載之範圍內可依目的而變更、變形。 Above, the embodiments of the present invention have been described by way of examples, but the scope of the present invention is not limited to these, and changes and modifications can be made according to the purpose within the scope described in the scope of the patent application.

例如，以上之說明係說明在搖動臂44前端設有流體噴嘴(雙流體噴嘴)46與筆型洗淨工具60兩者之例，不過如第八圖所示，亦可在搖動臂44前端僅設置流體噴嘴(雙流體噴嘴)46。又，如第九圖所示，亦可在搖動臂44前端僅設置筆型洗淨工具60。再者，如第十圖所示，亦可在基板洗淨裝置18中設置使用超音波洗淨基板W表面之超音波洗淨機90。 For example, the above description is an example in which both the fluid nozzle (two-fluid nozzle) 46 and the pen-type cleaning tool 60 are provided at the tip of the swing arm 44. However, as shown in the eighth figure, only the tip of the swing arm 44 may be provided. A fluid nozzle (two-fluid nozzle) 46 is provided. Moreover, as shown in FIG. 9, only a pen-type cleaning tool 60 may be provided at the tip of the swing arm 44. Furthermore, as shown in FIG. 10, an ultrasonic cleaning machine 90 for cleaning the surface of the substrate W using ultrasonic waves may be installed in the substrate cleaning device 18.

又，如第十一圖所示，亦可將流體噴嘴(雙流體噴嘴)46設於基板之外周位置(邊緣位置)。可藉由該流體噴嘴(雙流體噴嘴)46洗 淨基板外周(邊緣)之表面。此時，亦可在流體噴嘴(雙流體噴嘴)46附近設有局部排氣機構80。可藉由該局部排氣機構80強化基板外周位置(邊緣位置)之排氣，並可抑制液滴的飛濺。另外，並不一定需要局部排氣機構80。亦即，亦可不設局部排氣機構80。 Furthermore, as shown in FIG. 11, the fluid nozzle (two-fluid nozzle) 46 may be provided at a position (edge position) on the outer periphery of the substrate. Can be washed by the fluid nozzle (two-fluid nozzle) 46 Clean the surface of the outer periphery (edge) of the substrate. At this time, a local exhaust mechanism 80 may be provided near the fluid nozzle (two-fluid nozzle) 46. The local exhaust mechanism 80 can strengthen the exhaust at the outer peripheral position (edge position) of the substrate, and can suppress the splashing of liquid droplets. In addition, the local exhaust mechanism 80 is not necessarily required. That is, the local exhaust mechanism 80 may not be provided.

又，亦可以朝向基板W旋轉方向之上游側噴出雙流體噴流的方式，以指定角度傾斜設置雙流體噴嘴46。例如，雙流體噴嘴46可從平面觀看朝向基板W旋轉方向之上游側，在與旋轉方向(切線方向)構成之角為0°~90°的範圍傾斜設置。第十二(a)圖之例係朝向基板W旋轉方向之上游側，以與旋轉方向(切線方向)構成之角為0°來設置雙流體噴嘴46。藉此，雙流體噴流對旋轉之基板的相對速度上昇，可使洗淨性能提高。第十二(b)圖之例係以與基板W旋轉方向(切線方向)構成之角為90°來設置雙流體噴嘴46。此時，雙流體噴流對旋轉之基板的相對速度不致降低，可(不致降低地)維持洗淨性能。 In addition, the two-fluid nozzle 46 may be installed obliquely at a predetermined angle in such a manner that the two-fluid jet is ejected toward the upstream side of the rotation direction of the substrate W. For example, the two-fluid nozzle 46 may be inclined toward the upstream side of the rotation direction of the substrate W when viewed from a plane, and the angle formed by the rotation direction (tangential direction) is 0° to 90°. The example shown in Fig. 12(a) is toward the upstream side of the rotation direction of the substrate W, and the two-fluid nozzle 46 is installed at an angle of 0° with the rotation direction (tangential direction). Thereby, the relative speed of the two-fluid jet to the rotating substrate is increased, and the cleaning performance can be improved. In the example of FIG. 12(b), the two-fluid nozzle 46 is installed with the angle formed by the rotation direction (tangential direction) of the substrate W being 90°. At this time, the relative speed of the two-fluid jet to the rotating substrate will not decrease, and the cleaning performance can be maintained (without decreasing).

又，雙流體噴嘴46可從側面觀看朝向基板W旋轉方向之上游側，以與旋轉方向構成之角為45°~90°的範圍傾斜設置。此時，也可以說雙流體噴嘴46可從側面觀看朝向基板W旋轉方向之上游側，以與基板面構成之角為45°~90°的範圍傾斜設置。第十三(a)圖之例係朝向基板W旋轉方向之上游側，以與旋轉方向(基板面)構成之角為45°來設置雙流體噴嘴46。藉此，雙流體噴流對旋轉之基板的相對速度上昇，可使洗淨性能提高。第十三(b)圖之例係以與基板W旋轉方向(基板面)構成之角為90°來設置雙流體噴嘴46。此時，雙流體噴流對旋轉之基板的相對速度不致降低，可(不致降低地)維持洗淨性能。 In addition, the two-fluid nozzle 46 can be inclinedly installed in the range of 45° to 90° with respect to the rotation direction when viewed from the side, toward the upstream side of the rotation direction of the substrate W. At this time, it can also be said that the two-fluid nozzle 46 can be inclinedly installed in the range of 45° to 90° with the angle formed by the surface of the substrate toward the upstream side of the rotation direction of the substrate W when viewed from the side. The example in Fig. 13(a) is toward the upstream side of the rotation direction of the substrate W, and the two-fluid nozzle 46 is installed at an angle of 45° with the rotation direction (substrate surface). Thereby, the relative speed of the two-fluid jet to the rotating substrate is increased, and the cleaning performance can be improved. In the example of FIG. 13(b), the two-fluid nozzle 46 is installed with the angle formed by the rotation direction of the substrate W (substrate surface) being 90°. At this time, the relative speed of the two-fluid jet to the rotating substrate will not decrease, and the cleaning performance can be maintained (without decreasing).

第十四圖及第十五圖顯示具備氣流改善功能之基板洗淨裝置。該基板洗淨裝置18收容於機箱80，在機箱80之壁面上部設有一對通氣板81。此時通氣板81配置於比基板W高之位置(第十四圖中之上側)。在基板洗淨裝置18之上游側(第十四圖中之左側)鄰接設有第二基板搬送機器人26之基板搬送區82，在基板洗淨裝置18之下游側(第十四圖中之右側)鄰接設有第三基板搬送機器人28之基板搬送區83。在各基板搬送區82、83之上不分別設有送風單元84，通氣板81中設有將從送風單元84送風之氣體導入機箱80內部的氣體流入口85。送風單元84例如亦可採用以風扇吸入空氣並以濾清器清淨化的FFU(風扇濾清器單元)。藉由具備該送風單元84，因為可在用於搬送基板之基板搬送區82、83內，分別從垂直方向上方向下方輸送清淨空氣，所以可防止粒子等從下方飛舞，而防止污染在基板搬送區82、83內搬送中之基板。在機箱80之下部設有將機箱80內部氣體排出外部之氣體排出口86。該氣體排出口86亦可係上述之排出孔74。 Figures 14 and 15 show a substrate cleaning device with airflow improvement function. The substrate cleaning device 18 is housed in a cabinet 80, and a pair of ventilation plates 81 are provided on the upper part of the wall surface of the cabinet 80. At this time, the ventilation plate 81 is arranged at a position higher than the substrate W (upper side in the fourteenth figure). On the upstream side of the substrate cleaning device 18 (left side in Figure 14) is adjacent to the substrate transfer area 82 provided with the second substrate transfer robot 26, and on the downstream side of the substrate cleaning device 18 (right side in Figure 14) ) Adjacent to the substrate transfer area 83 where the third substrate transfer robot 28 is provided. The air blowing unit 84 is not provided on each of the substrate transfer areas 82 and 83, and the air flow plate 81 is provided with a gas inlet 85 for introducing the gas blown from the air blowing unit 84 into the cabinet 80. For the air blowing unit 84, for example, an FFU (Fan Filter Unit) in which air is sucked in by a fan and cleaned by a filter can be used. With this air blowing unit 84, clean air can be transported from the vertical direction up to down in the substrate transfer areas 82 and 83 for transporting substrates, so that particles etc. can be prevented from flying from below, and contamination can be prevented from being transported on the substrate. Substrates being transported in zones 82 and 83. A gas exhaust port 86 is provided at the lower part of the case 80 to discharge the air inside the case 80 to the outside. The gas discharge port 86 may also be the discharge hole 74 described above.

採用此種基板洗淨裝置18時，係從設於機箱80相對之壁面的一對氣體流入口85流入氣體至機箱80內部。由於一對氣體流入口85配置於比基板W高之位置，因此從一對氣體流入口85流入之氣體在機箱80之中央部於基板W上方相遇形成下降氣流，而從機箱80下部之氣體排出口86排出外部。此時，機箱80內部之液滴或噴霧亦隨下降氣流而從機箱80下部的氣體排出口86排出外部。藉此，可抑制液滴或噴霧在機箱80內部蔓延，可抑制因液滴或噴霧再度附著造成污染、瑕疵(Defect)。此時，可利用鄰接於基板洗淨裝置18之基板搬送區82、83的送風單元84抑制液滴或噴霧在機箱80內部蔓延。 When such a substrate cleaning device 18 is used, gas flows into the cabinet 80 from a pair of gas inlets 85 provided on the opposite wall surfaces of the cabinet 80. Since the pair of gas inlets 85 are arranged higher than the substrate W, the gas flowing in from the pair of gas inlets 85 meets above the substrate W at the center of the chassis 80 to form a downward flow, and the gas exhaust from the lower part of the chassis 80 The outlet 86 discharges to the outside. At this time, the liquid droplets or sprays inside the cabinet 80 are also discharged from the gas outlet 86 in the lower part of the cabinet 80 along with the downward airflow. Thereby, it is possible to prevent the droplets or spray from spreading inside the cabinet 80, and it is possible to prevent contamination and defects caused by the reattachment of the droplets or spray. At this time, the air blowing unit 84 adjacent to the substrate conveying areas 82 and 83 of the substrate cleaning device 18 can be used to prevent droplets or spray from spreading inside the cabinet 80.

又，第十六圖及第十七圖顯示具備氣流改善功能之基板洗淨裝置的變形例。本例之通氣板81中連接有氣體供給管線87的氣體供給埠88，從氣體供給管線87供給之氣體(例如氮氣)從氣體流入口85供給至機箱80內部。另外，在氣體供給管線87中設有閥門89，可開始/停止(ON/OFF)控制氣體之供給。例如，在將基板W搬送至機箱80內部時，開始(ON)供給氣體，基板W洗淨後，將基板W從機箱向外部搬送時停止(OFF)供給氣體。 In addition, Figs. 16 and 17 show modified examples of the substrate cleaning device with the function of improving air flow. The gas supply port 88 of the gas supply line 87 is connected to the vent plate 81 of this example, and the gas (for example, nitrogen) supplied from the gas supply line 87 is supplied from the gas inlet 85 to the inside of the cabinet 80. In addition, a valve 89 is provided in the gas supply line 87 to start/stop (ON/OFF) control of the gas supply. For example, when the substrate W is transferred to the inside of the cabinet 80, gas supply is started (ON), and after the substrate W is cleaned, the gas supply is stopped (OFF) when the substrate W is transferred from the cabinet to the outside.

即使依該變形例，仍可藉由從氣體供給管線87供給之氣體抑制液滴或噴霧在機箱80內部蔓延。此時，即使是例如無法利用鄰接於基板洗淨裝置18之基板搬送區82、83的送風單元84之狀況，仍可抑制液滴或噴霧在機箱80內部蔓延。 Even according to this modified example, the gas supplied from the gas supply line 87 can still suppress the spread of liquid droplets or sprays inside the cabinet 80. At this time, even in a situation where, for example, the air blowing unit 84 adjacent to the substrate transfer areas 82 and 83 of the substrate cleaning device 18 cannot be used, the spread of liquid droplets or sprays inside the cabinet 80 can be suppressed.

第十八圖顯示具備抑制帶電之基板洗淨裝置。該基板洗淨裝置18具備：將具有導電性之藥劑供給至基板W的藥劑供給噴嘴64；及將沖洗液(例如純水)供給至基板W之沖洗液供給噴嘴62。該基板洗淨裝置18首先在搬入基板W時，係從藥劑供給噴嘴64供給具有導電性之藥劑至基板W表面(參照第十八(a)圖)，然後使雙流體噴流從雙流體噴嘴46噴出進行基板W之雙流體洗淨(參照第十八(b)圖)。進行雙流體洗淨時，應從藥劑供給噴嘴64持續供給具有導電性之藥劑。而後，雙流體洗淨結束後，從沖洗液供給噴嘴62供給沖洗液至基板W表面，來沖洗藥劑(參照第十八(c)圖)。 Figure 18 shows a substrate cleaning device that suppresses electrification. The substrate cleaning device 18 includes: a drug supply nozzle 64 that supplies a conductive drug to the substrate W; and a rinse liquid supply nozzle 62 that supplies a rinse liquid (for example, pure water) to the substrate W. When the substrate W is carried in the substrate W, the substrate cleaning device 18 first supplies a conductive drug from the drug supply nozzle 64 to the surface of the substrate W (refer to Figure 18(a)), and then causes a two-fluid jet to flow from the two-fluid nozzle 46. The ejection performs two-fluid cleaning of the substrate W (refer to Figure 18(b)). When performing two-fluid cleaning, the medicine supply nozzle 64 should continuously supply the medicine with conductivity. Then, after the two-fluid cleaning is completed, the rinse liquid is supplied from the rinse liquid supply nozzle 62 to the surface of the substrate W to rinse the chemicals (see Fig. 18(c)).

採用此種基板洗淨裝置18時，由於係從藥劑供給噴嘴64供給具有導電性之藥劑，因此可抑制基板W表面之帶電量。藉此，可抑制雙流體洗淨造成基板表面之帶電量，可抑制因帶電之微粒子附著於基板W而造 成污染、瑕疵(Defect)。 In the case of such a substrate cleaning device 18, since the drug having conductivity is supplied from the drug supply nozzle 64, the amount of charge on the surface of the substrate W can be suppressed. As a result, the amount of charge on the surface of the substrate caused by the two-fluid cleaning can be suppressed, and it can be suppressed that the charged particles adhere to the substrate W. Into pollution, defects (Defect).

另外，雙流體噴嘴46亦可由導電性構件(例如導電性聚二醚酮(PEEK)等)構成。即使採用此種構成仍可抑制從雙流體噴嘴46噴出之液滴的帶電量。因此，可抑制因雙流體洗淨造成基板表面之帶電量，可抑制因帶電之微粒子附著於基板W而造成污染、瑕疵(Defect)。 In addition, the two-fluid nozzle 46 may be formed of a conductive member (for example, conductive polydietherketone (PEEK), etc.). Even with this structure, the charge amount of the droplets ejected from the two-fluid nozzle 46 can be suppressed. Therefore, it is possible to suppress the amount of charge on the surface of the substrate due to the two-fluid cleaning, and it is possible to suppress contamination and defects due to the adhesion of charged particles to the substrate W.

又，與二氧化碳氣體溶解水等洗淨液比較，載氣(氮氣等)之流速大，因此，與洗淨液供給管線52比較，載氣(氮氣等)之載氣供給管線50容易帶電。因此，除了雙流體噴嘴46之外，形成連接於雙流體噴嘴46之載氣供給管線50的構件亦使用導電性構件，藉由在載氣供給管線50從機箱80露出之點，以接地(Earth)之方式使導線101與載氣供給管線50連接，可進一步有效防止帶電(參照第十八(a)圖)。如此構成時，因為可抑制帶電之微粒子附著於基板W，所以亦可不設藥劑供給噴嘴64(此時，亦可不設沖洗液供給噴嘴62)。又，在比基板洗淨裝置18下游設有以沖洗液洗淨基板W之洗淨單元情況下，雖可設置藥劑供給噴嘴64，但是亦可不設沖洗液供給噴嘴62。 In addition, the flow rate of the carrier gas (nitrogen, etc.) is higher than that of cleaning liquids such as carbon dioxide gas dissolved water. Therefore, compared with the cleaning liquid supply line 52, the carrier gas supply line 50 of the carrier gas (nitrogen, etc.) tends to be charged. Therefore, in addition to the two-fluid nozzle 46, the member forming the carrier gas supply line 50 connected to the two-fluid nozzle 46 also uses a conductive member. The point where the carrier gas supply line 50 is exposed from the chassis 80 is grounded (Earth ) The lead 101 is connected to the carrier gas supply line 50, which can further effectively prevent electrification (refer to Figure 18(a)). In this configuration, since the charged particles can be prevented from adhering to the substrate W, the medicine supply nozzle 64 may not be provided (in this case, the rinse liquid supply nozzle 62 may not be provided). In addition, when a cleaning unit for cleaning the substrate W with a rinse liquid is provided downstream of the substrate cleaning device 18, the chemical supply nozzle 64 may be provided, but the rinse liquid supply nozzle 62 may not be provided.

另外，關於本發明之基板洗淨裝置具有的上述氣流改善功能(參照第十四圖~第十七圖)，除了使用雙流體噴嘴的基板洗淨裝置之外，亦可適用於使用筆型洗淨工具等搖動洗淨機構或超音波洗淨機構的基板洗淨裝置。又，如上述以導電性構件構成之雙流體噴嘴及載氣供給管線，除了具有本實施例中記載之可旋轉護蓋的基板洗淨裝置之外，亦可適用於具有固定護蓋之基板洗淨裝置。 In addition, regarding the above-mentioned air flow improvement function of the substrate cleaning device of the present invention (refer to Figures 14 to 17), in addition to the substrate cleaning device using a two-fluid nozzle, it can also be applied to a pen-type cleaning device. A substrate cleaning device such as a shaking cleaning mechanism or an ultrasonic cleaning mechanism such as a cleaning tool. In addition, the two-fluid nozzle and carrier gas supply line composed of conductive members as described above can also be applied to the cleaning of substrates with a fixed cover in addition to the substrate cleaning device with a rotatable cover described in this embodiment.净装置。 Net device.

【產業上之可利用性】[Industrial availability]

如以上，本發明之基板洗淨裝置進行雙流體洗淨時，具有可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面之效果，可利用於半導體晶圓之洗淨等。 As described above, the substrate cleaning device of the present invention has the effect of suppressing the rebound of droplets from the cover and preventing the droplets from re-attaching to the surface of the substrate when performing two-fluid cleaning, and can be used for cleaning semiconductor wafers.

1:基板保持機構 1: substrate holding mechanism

2:馬達(基板旋轉機構、護蓋旋轉機構) 2: Motor (substrate rotation mechanism, cover rotation mechanism)

3:旋轉護蓋 3: Rotate the cover

18:第二洗淨單元(基板洗淨裝置) 18: The second cleaning unit (substrate cleaning device)

46:流體噴嘴(雙流體噴嘴) 46: Fluid nozzle (two-fluid nozzle)

70:夾盤 70: Chuck

71:台座 71: pedestal

72:載台 72: Stage

73:支撐軸 73: Support shaft

74:排出孔 74: discharge hole

75:個定護蓋 75: fixed protective cover

W:基板 W: substrate

Claims (10)

一種基板洗淨裝置，其特徵為具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於前述基板保持機構之前述基板旋轉；雙流體噴嘴，其係使包含載氣的雙流體噴流朝向前述基板表面噴出；護蓋，其係配置於前述基板周圍；護蓋旋轉機構，其係使前述護蓋旋轉；及排出孔，其係排出從前述雙流體噴嘴供給之洗淨液與包含前述載氣的氣體；前述基板洗淨裝置具備：機箱，其係收容前述基板洗淨裝置；及氣體流入口，其係設於前述機箱之壁面，而使氣體流入前述機箱內；前述護蓋旋轉機構使前述護蓋與前述基板在同一旋轉方向旋轉；再者，前述基板洗淨裝置中，來自前述排出孔的排氣量被控制在供氣量比排氣量低，該供氣量係經由前述氣體流入口供給至前述機箱內的氣體，以及經由雙流體噴嘴供給至前述機箱內的載氣的供氣量。 A substrate cleaning device, which is characterized by comprising: a substrate holding mechanism that holds the substrate; a substrate rotation mechanism that rotates the substrate held by the substrate holding mechanism; and a two-fluid nozzle that makes a double-fluid nozzle that contains a carrier gas The fluid jet is ejected toward the surface of the substrate; the protective cover is arranged around the substrate; the protective cover rotating mechanism is used to rotate the protective cover; and the discharge hole is used to discharge the cleaning liquid and the cleaning liquid supplied from the two-fluid nozzle. The gas containing the carrier gas; the substrate cleaning device is provided with: a case for accommodating the substrate cleaning device; and a gas inlet provided on the wall surface of the case to allow the gas to flow into the case; the cover The rotating mechanism rotates the protective cover and the substrate in the same rotation direction; further, in the substrate cleaning device, the exhaust gas volume from the discharge hole is controlled so that the air supply volume is lower than the exhaust gas volume, and the air supply volume is passed through the The gas inlet is supplied to the gas in the cabinet, and the amount of carrier gas supplied to the cabinet through the two-fluid nozzle. 如申請專利範圍第1項之基板洗淨裝置，其中前述護蓋旋轉機構係以與前述基板同一之角速度使前述護蓋旋轉。 For example, the substrate cleaning device of the first item of the scope of patent application, wherein the cover rotating mechanism rotates the cover at the same angular velocity as the substrate. 如申請專利範圍第1項之基板洗淨裝置，其中將前述基板外端與前述護蓋前端之徑向距離A設定在2mm~80mm的範圍，將前述基板與前述護蓋前端之高度方向距離B設定在3mm~50mm 的範圍，將前述基板外端與前述護蓋內周面之徑向距離C設定在2mm~80mm的範圍。 For example, the substrate cleaning device of the first item of the scope of patent application, wherein the radial distance A between the outer end of the substrate and the front end of the cover is set in the range of 2mm~80mm, and the height direction distance B between the substrate and the front end of the cover is set Set at 3mm~50mm Set the radial distance C between the outer end of the substrate and the inner peripheral surface of the protective cover in the range of 2mm~80mm. 如申請專利範圍第3項之基板洗淨裝置，其中將前述基板外端與前述護蓋前端之徑向距離A設定為2mm，將前述基板與前述護蓋前端之高度方向距離B設定為15mm，將前述基板外端與前述護蓋內周面之徑向距離C設定為19mm。 For example, the substrate cleaning device of item 3 of the scope of patent application, wherein the radial distance A between the outer end of the substrate and the front end of the protective cover is set to 2mm, and the height direction distance B between the substrate and the front end of the protective cover is set to 15mm, The radial distance C between the outer end of the substrate and the inner peripheral surface of the protective cover was set to 19 mm. 如申請專利範圍第1項之基板洗淨裝置，其中係以朝向前述基板旋轉方向之上游側噴出前述雙流體噴流的方式，以指定角度傾斜地設置前述雙流體噴嘴。 For example, the substrate cleaning device of the first item of the scope of patent application, in which the two-fluid nozzle is arranged obliquely at a specified angle so that the two-fluid jet is sprayed toward the upstream side of the rotation direction of the substrate. 一種基板洗淨裝置，具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於前述基板保持機構之前述基板旋轉；雙流體噴嘴，其係使包含載氣的雙流體噴流朝向前述基板表面噴出；護蓋，其係配置於前述基板周圍；及護蓋旋轉機構，其係使前述護蓋旋轉；前述護蓋旋轉機構使前述護蓋與前述基板在同一旋轉方向旋轉；前述基板洗淨裝置之特徵為，具備：機箱，其係收容前述基板洗淨裝置；一對氣體流入口，其係設於前述機箱之壁面，而使氣體流入前述機箱內；及氣體排出口，其係設於前述機箱之下部，排出包含載氣之氣體， 該載氣是從前述雙流體噴嘴供給至前述機箱內；前述一對氣體流入口設於前述機箱相對之壁面，配置於比前述基板高之位置。 A substrate cleaning device includes: a substrate holding mechanism that holds a substrate; a substrate rotation mechanism that rotates the substrate held by the substrate holding mechanism; and a two-fluid nozzle that directs a two-fluid jet containing a carrier gas The surface of the substrate is ejected; the protective cover is arranged around the substrate; and the protective cover rotating mechanism is used to rotate the protective cover; the protective cover rotating mechanism rotates the protective cover and the substrate in the same rotation direction; the substrate The cleaning device is characterized by comprising: a cabinet for accommodating the substrate cleaning device; a pair of gas inlets provided on the wall surface of the cabinet to allow gas to flow into the cabinet; and a gas exhaust port, which is Set at the lower part of the aforementioned cabinet to discharge gas containing carrier gas, The carrier gas is supplied from the two-fluid nozzle into the cabinet; the pair of gas inlets are provided on opposite wall surfaces of the cabinet, and are arranged at a higher position than the substrate. 如申請專利範圍第6項之基板洗淨裝置，其中在前述基板洗淨裝置之上游側及下游側分別鄰接設有基板搬送區，前述氣體流入口將從前述基板搬送區之送風單元送風的氣體導入前述機箱內。 For example, the substrate cleaning device of the sixth item of the scope of patent application, wherein the substrate transfer area is adjacently arranged on the upstream side and the downstream side of the substrate cleaning device, and the gas inflow port will blow the gas from the blowing unit of the substrate transfer area Import into the aforementioned chassis. 如申請專利範圍第6項之基板洗淨裝置，其中在前述氣體流入口連接氣體供給管線，其係用於在前述機箱內供給前述氣體。 For example, the substrate cleaning device of the sixth item in the scope of patent application, wherein a gas supply line is connected to the gas inlet, which is used to supply the gas in the cabinet. 如申請專利範圍第1項之基板洗淨裝置，其中前述雙流體噴嘴係以導電性構件構成。 Such as the substrate cleaning device of the first item in the scope of the patent application, wherein the aforementioned two-fluid nozzle is composed of a conductive member. 如申請專利範圍第1項之基板洗淨裝置，其中具備藥劑供給噴嘴，其係在前述基板上供給具有導電性之藥劑。 For example, the substrate cleaning device of the first item in the scope of the patent application is provided with a medicine supply nozzle, which supplies a conductive medicine on the aforementioned substrate.
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