TW201628727A - Substrate cleaning apparatus - Google Patents
Substrate cleaning apparatus Download PDFInfo
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- TW201628727A TW201628727A TW104137139A TW104137139A TW201628727A TW 201628727 A TW201628727 A TW 201628727A TW 104137139 A TW104137139 A TW 104137139A TW 104137139 A TW104137139 A TW 104137139A TW 201628727 A TW201628727 A TW 201628727A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
Description
本發明係關於一種使用雙流體噴流來洗淨基板表面之基板洗淨裝置。 The present invention relates to a substrate cleaning apparatus for cleaning a substrate surface using a two-fluid jet.
過去以非接觸方式洗淨基板表面之洗淨方法，習知係使用雙流體噴流(2FJ)之洗淨方法。該洗淨方法係使微小液滴(噴霧)隨高速氣體從雙流體噴嘴朝向基板表面噴出而撞擊，利用該液滴向基板表面撞擊所產生之撞擊波來除去(洗淨)基板表面的微粒子等(例如參照專利文獻1)。 In the past, a cleaning method for cleaning the surface of a substrate in a non-contact manner has been conventionally carried out by using a two-fluid jet (2FJ) cleaning method. In the cleaning method, the fine droplets (spray) are caused to collide with the high-speed gas from the two-fluid nozzle toward the surface of the substrate, and the impact waves generated by the droplets colliding with the surface of the substrate are used to remove (clean) the particles on the surface of the substrate. (For example, refer to Patent Document 1).
然而，雙流體洗淨使雙流體噴流撞擊基板表面來除去基板表面之微小粒子時，基板表面之液滴因旋轉之基板的離心力及雙流體洗淨之側噴流而飛濺到周圍。飛濺之液滴附著於洗淨模組之外壁時，可能造成洗淨模組中之污染或再度附著於基板上。因此，過去之裝置為了抑制液滴之飛濺，係在旋轉之基板周圍設置護蓋，以護蓋阻擋朝向外壁飛濺之液滴，並從護蓋下部排出裝置外部，防止對基板再度附著，以抑制瑕疵(Defect)。 However, when the two-fluid cleaning causes the two-fluid jet to strike the surface of the substrate to remove minute particles on the surface of the substrate, the droplets on the surface of the substrate are splashed around by the centrifugal force of the rotating substrate and the side jet of the two-fluid washing. When the splashed droplets adhere to the outer wall of the cleaning module, it may cause contamination in the cleaning module or reattach to the substrate. Therefore, in order to suppress splashing of liquid droplets, the conventional device is provided with a cover around the rotating substrate, and the cover blocks the droplets splashed toward the outer wall, and discharges the outside of the device from the lower portion of the cover to prevent reattachment of the substrate to suppress Defect.
[專利文獻1]日本特開2005-294819號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-294819
但是，過去之裝置設置於基板周圍的護蓋被固定。雙流體洗淨時從雙流體噴嘴噴出之液滴速度(流速)係高速，且側噴流速度(液滴之徑向飛濺速度)亦係高速(參照第七圖)。例如，一般雙流體洗淨時從雙流體噴嘴噴出之液滴速度Vo係250~350m/秒，側噴流之速度Vf(液滴之徑向飛濺速度)係300~400m/秒。再者，高速雙流體洗淨或超高速雙流體洗淨時從雙流體噴嘴噴出之液滴速度Vo係350~400m/秒，側噴流之速度Vf(液滴之徑向飛濺速度)係700~1200m/秒。 However, the cover of the past device disposed around the substrate is fixed. The droplet velocity (flow velocity) ejected from the two-fluid nozzle at the time of the two-fluid cleaning is high, and the side jet velocity (radial spattering velocity of the droplet) is also high (refer to Fig. 7). For example, in the case of general two-fluid cleaning, the droplet velocity Vo ejected from the two-fluid nozzle is 250 to 350 m/sec, and the velocity of the side jet Vf (radial spattering velocity of the droplet) is 300 to 400 m/sec. Furthermore, the droplet velocity Vo ejected from the two-fluid nozzle during high-speed two-fluid cleaning or ultra-high-speed two-fluid cleaning is 350 to 400 m/sec, and the velocity Vf of the side jet (radial spattering velocity of the droplet) is 700~ 1200m / sec.
如此，雙流體洗淨時側噴流速度(液滴之徑向飛濺速度)非常高，撞擊到護蓋之液滴可能彈回而再度附著基板表面。特別是高速雙流體洗淨或超高速雙流體洗淨時更有可能再度附著基板表面。 Thus, the side jet velocity (the radial splash velocity of the droplets) during the two-fluid cleaning is very high, and the droplets hitting the cover may bounce back and adhere to the substrate surface again. In particular, high-speed two-fluid cleaning or ultra-high-speed two-fluid cleaning is more likely to adhere to the substrate surface again.
本發明係鑑於上述問題者，目的為提供一種進行雙流體洗淨時，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面之基板洗淨裝置。 The present invention has been made in view of the above problems, and an object thereof is to provide a substrate cleaning apparatus capable of suppressing droplets from rebounding from a cover when the two-fluid cleaning is performed, and preventing droplets from adhering again to the surface of the substrate.
本發明之基板洗淨裝置具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於基板保持機構之基板旋轉；雙流體噴嘴，其係使雙流體噴流朝向基板表面噴出；護蓋，其係配置於基板周圍；及護蓋旋轉機構，其係使護蓋旋轉；護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 The substrate cleaning apparatus of the present invention includes: a substrate holding mechanism that holds the substrate; a substrate rotating mechanism that rotates the substrate held by the substrate holding mechanism; and a two-fluid nozzle that ejects the two-fluid jet toward the surface of the substrate; The cover is disposed around the substrate; and the cover rotation mechanism rotates the cover; the cover rotation mechanism rotates the cover and the substrate in the same rotation direction.
採用該構成進行雙流體洗淨時，即使基板表面之液滴因基板旋轉產生之離心力及雙流體洗淨產生的側噴流而飛濺撞擊到護蓋，由於護蓋係與基板在同一旋轉方向旋轉，因此，與護蓋不旋轉時比較，可使液滴 之撞擊速度減低。藉此，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When the two-fluid cleaning is performed by this configuration, even if the droplets on the surface of the substrate are splashed and hit by the centrifugal force generated by the rotation of the substrate and the side jet generated by the two-fluid washing, the cover is rotated in the same rotational direction as the substrate. Therefore, the droplet can be made compared to when the cover is not rotated. The impact speed is reduced. Thereby, it is possible to suppress the droplets from rebounding from the cover and prevent the droplets from adhering again to the surface of the substrate.
又，本發明之基板洗淨裝置具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於基板保持機構之基板旋轉；搖動洗淨機構，其係搖動基板表面而洗淨；護蓋，其係配置於基板周圍；及護蓋旋轉機構，其係使護蓋旋轉；護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 Moreover, the substrate cleaning apparatus of the present invention includes: a substrate holding mechanism that holds the substrate; a substrate rotating mechanism that rotates the substrate held by the substrate holding mechanism; and a shaking cleaning mechanism that shakes the surface of the substrate and washes the substrate; The cover is disposed around the substrate; and the cover rotation mechanism rotates the cover; the cover rotation mechanism rotates the cover and the substrate in the same rotation direction.
採用該構成進行搖動洗淨時，即使供給之大流量沖洗水因基板旋轉而產生之離心力而從基板表面成為液滴飛濺而撞擊到護蓋，由於護蓋與基板在同一旋轉方向旋轉，因此與護蓋不旋轉時比較，可使液滴之撞擊速度減低。藉此，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When the shaking is performed by the above-described configuration, even if the centrifugal force generated by the rotation of the substrate by the large-flow flushing water supplied from the substrate is splashed from the surface of the substrate and hits the cover, since the cover rotates in the same rotational direction as the substrate, When the cover is not rotated, the impact speed of the droplets can be reduced. Thereby, it is possible to suppress the droplets from rebounding from the cover and prevent the droplets from adhering again to the surface of the substrate.
又，本發明之基板洗淨裝置具備：基板保持機構，其係保持基板；基板旋轉機構，其係使保持於基板保持機構之基板旋轉；超音波洗淨機構，其係使用超音波洗淨基板表面；護蓋，其係配置於基板周圍；及護蓋旋轉機構，其係使護蓋旋轉；護蓋旋轉機構使護蓋與基板在同一旋轉方向旋轉。 Moreover, the substrate cleaning apparatus of the present invention includes: a substrate holding mechanism that holds the substrate; a substrate rotating mechanism that rotates the substrate held by the substrate holding mechanism; and an ultrasonic cleaning mechanism that uses ultrasonic cleaning of the substrate a cover; the cover is disposed around the substrate; and a cover rotation mechanism that rotates the cover; and the cover rotation mechanism rotates the cover and the substrate in the same rotational direction.
採用該構成進行超音波洗淨時，即使供給之大流量沖洗水因基板旋轉而產生之離心力而從基板表面成為液滴飛濺而撞擊到護蓋，由於護蓋與基板在同一旋轉方向旋轉，因此與護蓋不旋轉時比較，可使液滴之撞擊速度減低。藉此，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When the ultrasonic cleaning is performed by the configuration, even if the centrifugal force generated by the rotation of the substrate is increased, the droplets are splashed from the surface of the substrate and hit the cover. Since the cover rotates in the same rotational direction as the substrate, the cover rotates in the same rotational direction. Compared with when the cover is not rotated, the impact speed of the liquid droplets can be reduced. Thereby, it is possible to suppress the droplets from rebounding from the cover and prevent the droplets from adhering again to the surface of the substrate.
又，本發明之基板洗淨裝置，護蓋旋轉機構亦可以與基板同一之角速度使護蓋旋轉。 Further, in the substrate cleaning apparatus of the present invention, the cover rotating mechanism can rotate the cover at the same angular velocity as the substrate.
採用該構成時，由於護蓋係以與基板同一之角速度旋轉，因此與護蓋以與基板不同之角速度旋轉時(例如護蓋未旋轉時)比較，可使液滴之撞擊速度減低。 According to this configuration, since the cover rotates at the same angular velocity as the substrate, the impact speed of the liquid droplets can be reduced as compared with when the cover is rotated at an angular velocity different from that of the substrate (for example, when the cover is not rotated).
又，本發明之基板洗淨裝置亦可將基板外端與護蓋前端之徑向距離A設定在2mm~80mm的範圍，將基板與護蓋前端之高度方向距離B設定在3mm~50mm的範圍，將基板外端與護蓋內周面之徑向距離C設定在2mm~80mm的範圍。 Moreover, in the substrate cleaning apparatus of the present invention, the radial distance A between the outer end of the substrate and the front end of the cover may be set in the range of 2 mm to 80 mm, and the distance B between the substrate and the front end of the cover may be set in the range of 3 mm to 50 mm. The radial distance C between the outer end of the substrate and the inner circumferential surface of the cover is set in the range of 2 mm to 80 mm.
採用該構成時，因為將護蓋對基板配置於適切位置，所以可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 According to this configuration, since the cover is placed on the substrate at the appropriate position, it is possible to suppress the liquid droplets from rebounding from the cover and prevent the liquid droplets from adhering to the surface of the substrate again.
又，本發明之基板洗淨裝置亦可將基板外端與護蓋前端之徑向距離A設定為2mm，將基板與護蓋前端之高度方向距離B設定為15mm，將基板外端與護蓋內周面之徑向距離C設定為19mm。 Moreover, the substrate cleaning device of the present invention can also set the radial distance A between the outer end of the substrate and the front end of the cover to 2 mm, and set the height direction distance B between the substrate and the front end of the cover to 15 mm, and the outer end of the substrate and the cover. The radial distance C of the inner peripheral surface was set to 19 mm.
採用該構成時，因為將護蓋對基板配置於最佳位置，所以可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 According to this configuration, since the cover is placed at the optimum position on the substrate, it is possible to suppress the liquid droplets from rebounding from the cover and prevent the liquid droplets from adhering to the surface of the substrate again.
又，本發明之基板洗淨裝置，亦可以朝向基板旋轉方向之上游側噴出雙流體噴流的方式，以指定角度傾斜地設置雙流體噴嘴。 Further, in the substrate cleaning apparatus of the present invention, the two-fluid nozzle may be provided at a predetermined angle so that the two-fluid jet can be ejected toward the upstream side in the rotation direction of the substrate.
採用該構成時，由於係從雙流體噴嘴朝向基板旋轉方向之上游側(抗拒基板之旋轉)噴出雙流體噴流，因此雙流體噴流對旋轉之基板的相對速度上昇，可使洗淨性能提高。 According to this configuration, since the two-fluid jet is ejected from the two-fluid nozzle toward the upstream side of the substrate rotation direction (the rotation of the resisting substrate), the relative velocity of the two-fluid jet to the rotating substrate is increased, and the cleaning performance can be improved.
又，本發明之基板洗淨裝置亦可具備：機箱，其係收容基板 洗淨裝置；一對氣體流入口，其係設於機箱之壁面，而使氣體流入機箱內；及氣體排出口，其係設於機箱之下部，排出機箱內之氣體；一對氣體流入口設於機箱相對之壁面，配置於比基板高之位置。 Moreover, the substrate cleaning apparatus of the present invention may further include: a chassis that houses the substrate a cleaning device; a pair of gas inflow ports disposed on a wall surface of the chassis to allow gas to flow into the chassis; and a gas discharge port disposed at a lower portion of the chassis to discharge gas in the chassis; and a pair of gas flow inlets It is disposed at a position higher than the substrate on the opposite wall surface of the chassis.
採用該構成時，氣體係從設於機箱相對之壁面的一對氣體流入口流入機箱內。由於一對氣體流入口配置於比基板高之位置，因此，從一對氣體流入口流入之氣體在機箱內之中央部於基板上方相遇形成下降氣流，而從機箱下部之氣體排出口排出。此時，機箱內之液滴或噴霧亦隨下降氣流而從機箱下部的氣體排出口排出。藉此，可抑制液滴或噴霧在機箱內蔓延，並可抑制因液滴或噴霧再度附著而造成瑕疵(Defect)。 With this configuration, the gas system flows into the casing from a pair of gas inflow ports provided on the wall surface opposite to the casing. Since the pair of gas inflow ports are disposed at a position higher than the substrate, the gas flowing in from the pair of gas inflow ports meets above the substrate at the central portion of the casing to form a descending airflow, and is discharged from the gas discharge port at the lower portion of the casing. At this time, the droplets or sprays in the chassis are also discharged from the gas discharge port at the lower portion of the chassis along with the descending airflow. Thereby, it is possible to suppress the droplets or the spray from spreading in the casing, and it is possible to suppress the defect caused by the reattachment of the droplets or the spray.
又，本發明之基板洗淨裝置，亦可在基板洗淨裝置之上游側及下游側分別鄰接設有基板搬送區，氣體流入口將從基板搬送區之送風單元送風的氣體導入機箱內。 Further, in the substrate cleaning apparatus of the present invention, the substrate transfer area may be adjacently provided on the upstream side and the downstream side of the substrate cleaning apparatus, and the gas inflow port may introduce the gas blown from the air supply unit of the substrate transfer area into the casing.
採用該構成時，可利用鄰接於基板洗淨裝置之基板搬送區的送風單元，抑制液滴或噴霧在機箱內蔓延。 According to this configuration, it is possible to prevent the droplets or the spray from spreading in the casing by the air blowing means adjacent to the substrate transfer area of the substrate cleaning apparatus.
又，本發明之基板洗淨裝置亦可在氣體流入口連接氣體供給管線，其係用於在機箱內供給氣體。 Further, the substrate cleaning apparatus of the present invention may be connected to a gas supply line at a gas inflow port for supplying gas in the casing.
採用該構成時，可藉由從氣體供給管線供給之氣體抑制液滴或噴霧在機箱內蔓延。因此，例如，即使無法利用鄰接於基板洗淨裝置之基板搬送區的送風單元時，仍可抑制液滴或噴霧在機箱內蔓延。 With this configuration, it is possible to suppress droplets or spray from spreading in the casing by the gas supplied from the gas supply line. Therefore, for example, even when the air blowing unit adjacent to the substrate transfer area of the substrate cleaning apparatus cannot be used, it is possible to suppress the droplets or the spray from spreading inside the casing.
又，本發明之基板洗淨裝置，雙流體噴嘴亦可以導電性構件構成。 Further, in the substrate cleaning apparatus of the present invention, the two-fluid nozzle may be formed of a conductive member.
採用該構成時，由於雙流體噴嘴之前端部係以導電性構件構 成，因此可抑制從雙流體噴嘴噴出之液滴的帶電量。藉此，可抑制基板表面因雙流體洗淨產生之帶電量，可抑制因帶電之微粒子附著於基板而造成瑕疵(Defect)。 With this configuration, since the front end of the two-fluid nozzle is made of a conductive member Therefore, the charge amount of the liquid droplets ejected from the two-fluid nozzle can be suppressed. Thereby, it is possible to suppress the amount of charge generated by the two-fluid cleaning on the surface of the substrate, and it is possible to suppress the occurrence of defects due to adhesion of charged fine particles to the substrate.
又，本發明之基板洗淨裝置亦可具備藥劑供給噴嘴，其係在基板上供給具有導電性之藥劑。 Moreover, the substrate cleaning device of the present invention may further include a drug supply nozzle that supplies a conductive agent to the substrate.
採用該構成時，由於係從藥劑供給噴嘴供給具有導電性之藥劑，因此，可抑制基板表面之帶電量。藉此，可抑制基板表面因雙流體洗淨產生之帶電量，可抑制因帶電之微粒子附著於基板而造成瑕疵(Defect)。 According to this configuration, since the conductive agent is supplied from the drug supply nozzle, the amount of charge on the surface of the substrate can be suppressed. Thereby, it is possible to suppress the amount of charge generated by the two-fluid cleaning on the surface of the substrate, and it is possible to suppress the occurrence of defects due to adhesion of charged fine particles to the substrate.
採用本發明而進行雙流體洗淨時，可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面。 When the two-fluid cleaning is carried out by the present invention, it is possible to suppress the droplets from rebounding from the cover and prevent the droplets from adhering again to the surface of the substrate.
1‧‧‧基板保持機構 1‧‧‧Substrate retention mechanism
2‧‧‧馬達(基板旋轉機構、護蓋旋轉機構) 2‧‧‧Motor (substrate rotation mechanism, cover rotation mechanism)
3‧‧‧旋轉護蓋 3‧‧‧Rotary cover
10‧‧‧外殼 10‧‧‧ Shell
12‧‧‧裝載埠 12‧‧‧Loading
14a~14d‧‧‧研磨單元 14a~14d‧‧‧grinding unit
16‧‧‧第一洗淨單元 16‧‧‧First cleaning unit
18‧‧‧第二洗淨單元(基板洗淨裝置) 18‧‧‧Second cleaning unit (substrate cleaning device)
20‧‧‧乾燥單元 20‧‧‧Drying unit
22‧‧‧第一基板搬送機器人 22‧‧‧First substrate transport robot
24‧‧‧基板搬送單元 24‧‧‧Substrate transport unit
26‧‧‧第二基板搬送機器人 26‧‧‧Second substrate transport robot
28‧‧‧第三基板搬送機器人 28‧‧‧ Third substrate transport robot
30‧‧‧控制部 30‧‧‧Control Department
40‧‧‧洗淨槽 40‧‧‧cleaning trough
42‧‧‧支撐軸 42‧‧‧Support shaft
44‧‧‧搖動臂 44‧‧‧Shake arm
46‧‧‧流體噴嘴(雙流體噴嘴) 46‧‧‧Fluid nozzle (two-fluid nozzle)
50‧‧‧載氣供給管線 50‧‧‧carrier gas supply pipeline
52‧‧‧洗淨液供給管線 52‧‧‧Clean liquid supply pipeline
54‧‧‧馬達 54‧‧‧Motor
60‧‧‧筆型洗淨工具 60‧‧‧ pen type cleaning tool
62‧‧‧沖洗液供給噴嘴 62‧‧‧ rinse liquid supply nozzle
64‧‧‧藥劑供給噴嘴 64‧‧‧Pharmaceutical supply nozzle
70‧‧‧夾盤 70‧‧‧ chuck
71‧‧‧台座 71‧‧‧ pedestal
72‧‧‧載台 72‧‧‧ stage
73‧‧‧支撐軸 73‧‧‧Support shaft
74‧‧‧排出孔 74‧‧‧Exhaust hole
75‧‧‧固定護蓋 75‧‧‧Fixed cover
80‧‧‧局部排氣機構，機箱 80‧‧‧Local exhaust mechanism, chassis
81‧‧‧通氣板 81‧‧‧Aeration board
82‧‧‧基板搬送區 82‧‧‧Substrate transfer area
83‧‧‧基板搬送區 83‧‧‧Substrate transfer area
84‧‧‧送風單元 84‧‧‧Air supply unit
85‧‧‧氣體流入口 85‧‧‧ gas inlet
86‧‧‧氣體排出口 86‧‧‧ gas discharge
87‧‧‧氣體供給管線 87‧‧‧ gas supply pipeline
88‧‧‧氣體供給埠 88‧‧‧Gas supply埠
89‧‧‧閥門 89‧‧‧ Valve
90‧‧‧超音波洗淨機 90‧‧‧Ultrasonic washing machine
101‧‧‧導線 101‧‧‧ wire
O‧‧‧中心 O‧‧ Center
W‧‧‧基板 W‧‧‧Substrate
第一圖係顯示具備本發明實施形態之基板洗淨裝置(基板洗淨單元)的基板處理裝置全部構成之俯視圖。 The first drawing shows a plan view of the entire configuration of a substrate processing apparatus including a substrate cleaning apparatus (substrate cleaning unit) according to an embodiment of the present invention.
第二圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 The second drawing shows a configuration of a substrate cleaning apparatus (substrate cleaning unit) according to an embodiment of the present invention.
第三圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的構成俯視圖。 The third drawing shows a configuration of a substrate cleaning apparatus (substrate cleaning unit) according to an embodiment of the present invention.
第四圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的構成側視圖。 Fig. 4 is a side view showing the configuration of a substrate cleaning apparatus (substrate cleaning unit) according to an embodiment of the present invention.
第五圖係顯示本發明實施形態之基板洗淨裝置(基板洗淨單元)的重要部分說明圖。 Fig. 5 is an explanatory view showing an important part of a substrate cleaning apparatus (substrate cleaning unit) according to an embodiment of the present invention.
第六圖係本發明實施形態之基板洗淨裝置(基板洗淨單元)中雙流體洗淨的液滴之撞擊速度說明圖。 Fig. 6 is an explanatory diagram of the impact velocity of the liquid droplets washed by the two-fluid in the substrate cleaning device (substrate cleaning unit) according to the embodiment of the present invention.
第七圖係雙流體洗淨之側噴流的速度說明圖。 The seventh figure is a speed diagram of the side jet flow of the two-fluid wash.
第八圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Fig. 8 is a perspective view showing the configuration of a substrate cleaning device (substrate cleaning unit) of another embodiment.
第九圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Fig. 9 is a perspective view showing the configuration of a substrate cleaning device (substrate cleaning unit) according to another embodiment.
第十圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Fig. 10 is a perspective view showing the configuration of a substrate cleaning device (substrate cleaning unit) according to another embodiment.
第十一圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的構成立體圖。 Fig. 11 is a perspective view showing the configuration of a substrate cleaning device (substrate cleaning unit) according to another embodiment.
第十二圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的重要部分俯視圖。 Fig. 12 is a plan view showing an important part of a substrate cleaning apparatus (substrate cleaning unit) of another embodiment.
第十三圖係顯示其他實施形態之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Fig. 13 is a side view showing an important part of a substrate cleaning device (substrate cleaning unit) of another embodiment.
第十四圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Fig. 14 is a side view showing an important part of a substrate cleaning device (substrate cleaning unit) having a flow improving function.
第十五圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 The fifteenth diagram shows a side view of an important part of the substrate cleaning device (substrate cleaning unit) having the airflow improving function.
第十六圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元)的其他例之重要部分側視圖。 Fig. 16 is a side view showing an important part of another example of the substrate cleaning device (substrate cleaning unit) having the airflow improving function.
第十七圖係顯示具備氣流改善功能之基板洗淨裝置(基板洗淨單元) 的其他例之重要部分側視圖。 Figure 17 shows a substrate cleaning device (substrate cleaning unit) with airflow improvement function Side view of important parts of other examples.
第十八圖係顯示具備抑制帶電功能之基板洗淨裝置(基板洗淨單元)的重要部分側視圖。 Fig. 18 is a side view showing an important part of a substrate cleaning device (substrate cleaning unit) having a function of suppressing charging.
以下，使用圖式說明本發明實施形態之基板洗淨裝置。本實施形態係例示用於半導體晶圓之洗淨等的基板洗淨裝置之情況。 Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention will be described with reference to the drawings. This embodiment is a case of a substrate cleaning apparatus used for cleaning a semiconductor wafer or the like.
第一圖係顯示具備本實施形態之基板洗淨裝置(基板洗淨單元)的基板處理裝置全部構成之俯視圖。如第一圖所示，基板處理裝置具備：概略矩形狀之外殼10；及裝載貯存多數個半導體晶圓等之基板的基板匣盒之裝載埠12。裝載埠12鄰接於外殼10配置。裝載埠12中可搭載開放式匣盒、標準製造接口(SMIF(Standard Manufacturing Interface))盒、或前開式晶圓傳送盒(FOUP(Front Opening Unified Pod))。SMIF、FOUP係在內部收納基板匣盒，藉由以分隔壁覆蓋，可保持與外部空間獨立之環境的密閉容器。 The first drawing shows a plan view of the entire configuration of a substrate processing apparatus including the substrate cleaning apparatus (substrate cleaning unit) of the present embodiment. As shown in the first figure, the substrate processing apparatus includes a casing 10 having a substantially rectangular shape, and a loading cassette 12 for loading and unloading a substrate of a plurality of semiconductor wafers. The loading cassette 12 is disposed adjacent to the housing 10. The loading cassette 12 can be equipped with an open cassette, a standard manufacturing interface (SMIF) box, or a front opening wafer transfer box (FOUP (Front Opening Unified Pod)). The SMIF and FOUP are sealed containers that are housed inside the substrate, and are covered by a partition wall to maintain an environment independent of the external space.
外殼10之內部收容有：複數個(第一圖之例係4個)研磨單元14a~14d；洗淨研磨後之基板的第一洗淨單元16及第二洗淨單元18；及使洗淨後之基板乾燥的乾燥單元20。研磨單元14a~14d沿著基板處理裝置之長度方向排列，洗淨單元16、18及乾燥單元20亦沿著基板處理裝置之長度方向排列。本發明之基板洗淨裝置適用於第二洗淨單元18。 The inside of the outer casing 10 houses: a plurality of (four in the first figure) polishing units 14a to 14d; a first cleaning unit 16 and a second cleaning unit 18 for washing and polishing the substrate; and cleaning The substrate drying unit 20 is then dried. The polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus. The substrate cleaning apparatus of the present invention is suitable for the second cleaning unit 18.
如第一圖所示，在被裝載埠12、位於該裝載埠12側之研磨單元14a及乾燥單元20所包圍的區域配置有第一基板搬送機器人22。又，與研磨單元14a~14d平行地配置有基板搬送單元24。第一基板搬送機器人22從裝 載埠12接收研磨前之基板而送交基板搬送單元24，並且從乾燥單元20接收乾燥後之基板而送回裝載埠12。基板搬送單元24搬送從第一基板搬送機器人22所接收之基板，並在與各研磨單元14a~14d之間進行基板的交接。 As shown in the first figure, the first substrate transfer robot 22 is disposed in a region surrounded by the loading unit 12 and the polishing unit 14a and the drying unit 20 on the side of the loading cassette 12. Further, the substrate transfer unit 24 is disposed in parallel with the polishing units 14a to 14d. The first substrate transfer robot 22 is loaded The carrier 12 receives the substrate before polishing and delivers it to the substrate transfer unit 24, and receives the dried substrate from the drying unit 20 to return the loaded cassette 12. The substrate transfer unit 24 transports the substrate received from the first substrate transfer robot 22, and transfers the substrate between the respective polishing units 14a to 14d.
在第一洗淨單元16與第二洗淨單元18之間配置有在與此等各單元16、18之間進行基板交接的第二基板搬送機器人26。又，在第二洗淨單元18與乾燥單元20之間配置有在與此等各單元18、20之間進行基板交接的第三基板搬送機器人28。 Between the first cleaning unit 16 and the second cleaning unit 18, a second substrate transfer robot 26 that performs substrate transfer between the units 16 and 18 is disposed. Further, between the second cleaning unit 18 and the drying unit 20, a third substrate transfer robot 28 that performs substrate transfer between the units 18 and 20 is disposed.
再者，外殼10內部配置有控制基板處理裝置之各機器的動作之控制部30。該控制部30亦具備控制第二洗淨單元(基板洗淨裝置)18之動作的功能。 Further, inside the casing 10, a control unit 30 that controls the operation of each device of the substrate processing apparatus is disposed. The control unit 30 also has a function of controlling the operation of the second cleaning unit (substrate cleaning device) 18.
本實施形態之第一洗淨單元16係使用在洗淨液存在下，對基板表裡兩面摩擦滾筒狀延伸之滾筒洗淨構件來洗淨基板的滾筒洗淨單元。該第一洗淨單元(滾筒洗淨單元)16係以併用對洗淨液施加約1MHz之超音波，使洗淨液因振動加速度產生之作用力作用於附著在基板表面的微粒子之超音波振盪洗淨的方式構成。 In the first cleaning unit 16 of the present embodiment, a drum cleaning unit that cleans the substrate by rubbing the roller cleaning member that extends in a roll shape on both sides of the substrate in the presence of the cleaning liquid is used. The first cleaning unit (roller cleaning unit) 16 applies an ultrasonic wave of about 1 MHz to the cleaning liquid in combination, so that the action of the cleaning liquid due to the vibration acceleration acts on the ultrasonic wave oscillation of the fine particles attached to the surface of the substrate. The way of washing is made up.
又，第二洗淨單元18係使用本發明之基板洗淨裝置。又，乾燥單元20係使用保持基板，從移動之噴嘴噴出IPA蒸汽而使基板乾燥，進一步高速旋轉而藉由離心力使基板乾燥之自旋乾燥單元。另外，洗淨部亦可將洗淨單元16、18形成上下兩階配置之上下兩階構造。此時，洗淨部具有上下兩階之基板處理單元。 Further, the second cleaning unit 18 uses the substrate cleaning apparatus of the present invention. Further, the drying unit 20 is a spin drying unit that uses a holding substrate, ejects IPA vapor from a moving nozzle, and dries the substrate, and further rotates at a high speed to dry the substrate by centrifugal force. In addition, the cleaning unit may also form the cleaning unit 16 and 18 in a lower two-stage configuration. At this time, the cleaning unit has a substrate processing unit of two steps up and down.
第二圖係本實施形態之基板洗淨裝置(基板洗淨單元)的立體圖，第三圖係本實施形態之基板洗淨裝置(基板洗淨單元)的俯視圖。 The second drawing is a perspective view of the substrate cleaning apparatus (substrate cleaning unit) of the present embodiment, and the third drawing is a plan view of the substrate cleaning apparatus (substrate cleaning unit) of the present embodiment.
如第二圖及第三圖所示，本實施形態之基板洗淨裝置(第二洗淨單元)18具備：圍繞基板W周圍之洗淨槽40；直立設於該處理槽40側方而旋轉自如之支撐軸42；及在該支撐軸42上端連結基部而水平方向延伸之搖動臂44。在洗淨槽40中，基板W係以夾盤等保持，並藉由夾盤等之旋轉而旋轉的方式構成。在搖動臂44之自由端(前端)上下活動自如地安裝有流體噴嘴(雙流體噴嘴)46。 As shown in the second and third figures, the substrate cleaning device (second cleaning unit) 18 of the present embodiment includes a cleaning tank 40 surrounding the periphery of the substrate W, and is erected on the side of the processing tank 40 to rotate. The support shaft 42 is freely supported; and a rocking arm 44 that extends in the horizontal direction by joining the base at the upper end of the support shaft 42. In the cleaning tank 40, the substrate W is held by a chuck or the like and is rotated by rotation of a chuck or the like. A fluid nozzle (two-fluid nozzle) 46 is movably mounted up and down at the free end (front end) of the swing arm 44.
流體噴嘴46上連接有：供給氮氣(N2)等載氣之載氣供給管線50；與供給純水或二氧化碳(CO2)氣體溶解水等之洗淨液的洗淨液供給管線52；藉由使供給於流體噴嘴46內部之氮氣等載氣與純水或二氧化碳氣體溶解水等洗淨液從流體噴嘴46高速噴出，生成洗淨液於載氣中以微小液滴(噴霧)而存在的雙流體噴流。藉由使該流體噴嘴46生成之雙流體噴流朝向旋轉中的基板W表面噴出而撞擊，可利用微小液滴對基板表面撞擊產生之撞擊波來除去(洗淨)基板表面的微粒子等。 The fluid nozzle 46 is connected to a carrier gas supply line 50 for supplying a carrier gas such as nitrogen (N 2 ), and a cleaning liquid supply line 52 for supplying a cleaning liquid such as pure water or carbon dioxide (CO 2 ) gas to dissolve water; The cleaning liquid such as nitrogen gas supplied to the inside of the fluid nozzle 46 and pure water or carbon dioxide gas dissolved water are ejected from the fluid nozzle 46 at a high speed, and the cleaning liquid is generated in the carrier gas by fine droplets (spray). Two-fluid jet. By causing the two-fluid jet generated by the fluid nozzle 46 to be ejected toward the surface of the rotating substrate W, it is possible to remove (clean) the fine particles or the like on the surface of the substrate by the impact waves generated by the collision of the fine droplets on the surface of the substrate.
支撐軸42連結於馬達54，其係作為藉由使支撐軸42旋轉，以該支撐軸42為中心而使搖動臂44搖動之驅動機構。 The support shaft 42 is coupled to the motor 54 as a drive mechanism that swings the swing arm 44 around the support shaft 42 by rotating the support shaft 42.
本例係在搖動臂44前端上下移動自如且旋轉自如地安裝有例如由PVA海綿構成的筆型洗淨工具60。再者，位於洗淨槽40之側上方，配置有在以夾盤等保持而旋轉中之基板W表面供給沖洗液的沖洗液供給噴嘴62；及供給藥劑之藥劑供給噴嘴64。藉由以指定之按壓力使筆型洗淨工具60的下端接觸於旋轉中之基板W表面，而且藉由搖動臂44之搖動使筆型洗淨工具60移動，同時在基板W表面供給沖洗液或藥劑，可進行基板W表面之接觸洗淨。另外，上述基板W表面之接觸洗淨係依需要而進行之處理，未 必需要實施。 In this example, a pen type cleaning tool 60 made of, for example, a PVA sponge is rotatably attached to the front end of the swing arm 44 so as to be rotatable. Further, a rinsing liquid supply nozzle 62 that supplies a rinsing liquid on the surface of the substrate W that is held while being held by a chuck or the like, and a medicine supply nozzle 64 that supplies the medicine are disposed above the side of the cleaning tank 40. The lower end of the pen-type cleaning tool 60 is brought into contact with the surface of the rotating substrate W by a predetermined pressing force, and the pen-type cleaning tool 60 is moved by the shaking of the shaking arm 44, while the rinse liquid is supplied on the surface of the substrate W. Alternatively, the agent can be cleaned by contact with the surface of the substrate W. In addition, the contact cleaning of the surface of the substrate W is performed as needed, and Must be implemented.
如第三圖所示，流體噴嘴46隨著搖動臂44之搖動，從偏置位置A通過基板W之中心O的上方位置及從該中心O離開指定間隔之變位點B的上方位置，而沿著圓弧狀之移動軌跡移動至基板W外周部外方的洗淨結束位置C，來進行基板W表面之洗淨。該洗淨時，係朝向旋轉中之基板W表面，使洗淨液在載氣中以微小液滴(噴霧)而存在之雙流體噴流從流體噴嘴46噴出。另外，第三圖顯示流體噴嘴46位於變位點B之上方位置的狀態。 As shown in the third figure, the fluid nozzle 46 moves from the offset position A to the upper position of the center O of the substrate W and the position above the displacement point B of the specified interval from the center O as the rocking arm 44 is rocked. The surface of the substrate W is washed by moving along the arc-shaped movement trajectory to the cleaning end position C outside the outer peripheral portion of the substrate W. At the time of the cleaning, the two-fluid jet which is present as a fine droplet (spray) in the carrier gas is ejected from the fluid nozzle 46 toward the surface of the substrate W which is rotating. In addition, the third diagram shows a state in which the fluid nozzle 46 is located above the displacement point B.
以下，參照圖式更詳細說明基板洗淨裝置(基板洗淨單元)之構成。第四圖係基板洗淨裝置(基板洗淨單元)之側視圖。 Hereinafter, the configuration of the substrate cleaning device (substrate cleaning unit) will be described in more detail with reference to the drawings. The fourth drawing is a side view of the substrate cleaning device (substrate cleaning unit).
如第四圖所示，基板洗淨裝置具備：水平保持基板W之基板保持機構1；經由基板保持機構1使基板W在其中心軸周圍旋轉之馬達(旋轉機構)2；及配置於基板W周圍之旋轉護蓋3。 As shown in FIG. 4, the substrate cleaning apparatus includes: a substrate holding mechanism 1 that horizontally holds the substrate W; a motor (rotating mechanism) 2 that rotates the substrate W around the central axis thereof via the substrate holding mechanism 1; and is disposed on the substrate W Rotating cover 3 around.
基板保持機構1具有：握持基板W周緣部之複數個夾盤70；固定此等夾盤70之圓形台座71；支撐該台座71之載台72；及支撐該載台72之中空狀的支撐軸73。此時，台座71、載台72、支撐軸73配置於同軸上。旋轉護蓋3固定於載台72之端部，載台72與旋轉護蓋亦配置於同軸上。又，保持於夾盤70之基板W與旋轉護蓋3位於同軸上。 The substrate holding mechanism 1 has a plurality of chucks 70 that hold the peripheral edge portion of the substrate W, a circular pedestal 71 that fixes the chucks 70, a stage 72 that supports the pedestal 71, and a hollow shape that supports the stage 72. Support shaft 73. At this time, the pedestal 71, the stage 72, and the support shaft 73 are disposed coaxially. The rotating cover 3 is fixed to the end of the stage 72, and the stage 72 and the rotating cover are also disposed coaxially. Further, the substrate W held by the chuck 70 is coaxial with the rotary cover 3.
在支撐軸73之外周面連結有馬達2。馬達2之扭力傳達至支撐軸73，藉此保持於夾盤70之基板W旋轉。此時，基板W與旋轉護蓋一體旋轉，兩者之相對速度為0。另外，亦可在基板W與旋轉護蓋3之間有若干速度差。 The motor 2 is coupled to the outer peripheral surface of the support shaft 73. The torque of the motor 2 is transmitted to the support shaft 73, whereby the substrate W held by the chuck 70 is rotated. At this time, the substrate W rotates integrally with the rotary cover, and the relative speed between the two is zero. In addition, there may be some speed difference between the substrate W and the rotating cover 3.
如此，可藉由同一個旋轉機構(馬達2)使基板W與旋轉護蓋3旋轉。此時，可使基板W與旋轉護蓋3以同一速度旋轉。使基板W與旋轉 護蓋3以同一速度旋轉者，是指使基板W與旋轉護蓋3在同一方向以同一角速度旋轉，不包含彼此在相反方向旋轉。該旋轉機構(馬達2)相當於本發明之基板旋轉機構及護蓋旋轉機構。另外，基板W與旋轉護蓋3亦可分別藉由不同之旋轉機構旋轉。 In this manner, the substrate W and the spin cover 3 can be rotated by the same rotating mechanism (motor 2). At this time, the substrate W and the spin cover 3 can be rotated at the same speed. Make substrate W and rotate The rotation of the cover 3 at the same speed means that the substrate W and the rotating cover 3 are rotated at the same angular velocity in the same direction, and do not include rotation in opposite directions. This rotating mechanism (motor 2) corresponds to the substrate rotating mechanism and the cover rotating mechanism of the present invention. In addition, the substrate W and the rotating cover 3 can also be rotated by different rotating mechanisms.
又，如第四圖所示，載台72上形成有複數個排出孔74。排出孔74例如係在旋轉護蓋3之周方向延伸的長孔。從流體噴嘴46供給之洗淨液與載氣或周圍環境氣體(通常係空氣)一起通過該排出孔74而排出。本實施形態之排氣量控制在1~3m3/分鐘的範圍。並藉由控制供氣量比排氣量低，而適切排出基板洗淨裝置(基板洗淨單元)內之環境氣體。藉此，可使液滴隨氣流而適切排出，可抑制液滴在基板上飛濺。再者，在旋轉護蓋3之外側設有固定護蓋75。該固定護蓋75構成不旋轉。 Further, as shown in the fourth figure, a plurality of discharge holes 74 are formed in the stage 72. The discharge hole 74 is, for example, a long hole extending in the circumferential direction of the rotary cover 3. The cleaning liquid supplied from the fluid nozzle 46 is discharged through the discharge hole 74 together with a carrier gas or ambient gas (usually air). The amount of exhaust gas in the present embodiment is controlled in the range of 1 to 3 m 3 /min. Further, by controlling the amount of supplied air to be lower than the amount of exhaust gas, the ambient gas in the substrate cleaning device (substrate cleaning unit) is appropriately discharged. Thereby, the liquid droplets can be appropriately discharged with the air flow, and the droplets can be suppressed from splashing on the substrate. Further, a fixing cover 75 is provided on the outer side of the rotating cover 3. The fixed cover 75 does not rotate.
第五圖係基板洗淨裝置(基板洗淨單元)之重要部分說明圖。本實施形態應將基板外端與旋轉護蓋前端之徑向距離A設定在2mm~80mm的範圍，將基板與旋轉護蓋前端之高度方向距離B設定在3mm~50mm的範圍，基板外端與旋轉護蓋內周面之徑向距離C設定在2mm~80mm的範圍。例如，將基板外端與旋轉護蓋前端之徑向距離A設定為2mm，將基板與旋轉護蓋前端之高度方向距離B設定為15mm，將基板外端與旋轉護蓋內周面之徑向距離C設定為19mm。 The fifth drawing is an explanatory view of an important part of the substrate cleaning device (substrate cleaning unit). In this embodiment, the radial distance A between the outer end of the substrate and the tip end of the rotating cover is set to be in the range of 2 mm to 80 mm, and the distance B between the substrate and the tip end of the rotating cover is set in the range of 3 mm to 50 mm, and the outer end of the substrate is The radial distance C of the inner peripheral surface of the rotating cover is set in the range of 2 mm to 80 mm. For example, the radial distance A between the outer end of the substrate and the front end of the rotating cover is set to 2 mm, and the height direction distance B between the substrate and the front end of the rotating cover is set to 15 mm, and the outer end of the substrate and the inner peripheral surface of the rotating cover are radially The distance C is set to 19 mm.
就如以上構成之基板洗淨裝置，說明其動作。 The operation of the substrate cleaning apparatus configured as above will be described.
基板處理裝置係將從裝載埠12內之基板匣盒取出的基板表面搬送至研磨單元14a~14d之任何一個實施研磨。而後，以第一洗淨單元(滾筒洗淨單元)16洗淨研磨後之基板表面後，以使用雙流體噴流之第二洗淨 單元(基板洗淨單元)18進一步洗淨。以該第二洗淨單元18(基板洗淨單元)洗淨基板表面時，控制流體噴嘴46之移動速度，而且使雙流體噴流朝向旋轉中之基板W表面噴出。 The substrate processing apparatus transports the surface of the substrate taken out from the substrate cassette in the loading cassette 12 to any one of the polishing units 14a to 14d for polishing. Then, after washing the surface of the polished substrate with the first cleaning unit (roller cleaning unit) 16, the second cleaning is performed using the two-fluid jet. The unit (substrate cleaning unit) 18 is further washed. When the surface of the substrate is cleaned by the second cleaning unit 18 (substrate cleaning unit), the moving speed of the fluid nozzle 46 is controlled, and the two-fluid jet is ejected toward the surface of the rotating substrate W.
本實施形態係使以第一洗淨單元16滾筒洗淨後搬入第二洗淨單元18的基板旋轉，而且從沖洗液供給噴嘴62在基板表面供給數秒(例如3秒)沖洗液進行基板表面之沖洗洗淨，從藥劑供給噴嘴64噴射藥劑於基板表面，而且使筆型洗淨工具60以指定次數(例如2~3次)掃瞄來筆型洗淨基板表面後，可同樣在第二洗淨單元18內立即開始使用雙流體噴流之洗淨。 In the present embodiment, the substrate that has been washed by the first cleaning unit 16 and then carried into the second cleaning unit 18 is rotated, and the rinsing liquid is supplied from the rinsing liquid supply nozzle 62 to the surface of the substrate for several seconds (for example, three seconds). Rinse and wash, spray the drug onto the surface of the substrate from the drug supply nozzle 64, and scan the surface of the substrate with a pen-type cleaning tool 60 by a predetermined number of times (for example, 2 to 3 times), and then wash the surface of the substrate in the same manner. Immediate cleaning within the clean unit 18 begins with the use of a two-fluid jet.
使用雙流體噴流之基板表面的洗淨，係藉由使搖動臂44以指定次數(例如1~4次)搖動，而使噴出雙流體噴流之流體噴嘴46在旋轉中的基板上方移動來進行。搖動臂44之角速度，換言之流體噴嘴46之移動速度係從容許處理之時間及次數算出。另外，使用雙流體噴流洗淨基板表面時之基板的旋轉速度，不需要與使用筆型洗淨工具60洗淨基板表面時之基板的旋轉速度一致。 The cleaning of the surface of the substrate using the two-fluid jet is performed by moving the swing arm 44 a predetermined number of times (for example, 1 to 4 times) to move the fluid nozzle 46 that ejects the two-fluid jet over the rotating substrate. The angular velocity of the rocker arm 44, in other words, the speed of movement of the fluid nozzle 46, is calculated from the time and number of times the process is allowed. Further, the rotation speed of the substrate when the surface of the substrate is washed using the two-fluid jet does not need to coincide with the rotation speed of the substrate when the surface of the substrate is cleaned by the pen type cleaning tool 60.
而後，從第二洗淨單元18取出洗淨後之基板，搬入乾燥單元20使其自旋乾燥，然後將乾燥後之基板送回裝載埠12的基板匣盒內。 Then, the washed substrate is taken out from the second cleaning unit 18, carried into the drying unit 20 to be spin-dried, and then the dried substrate is returned to the substrate cassette of the loading cassette 12.
採用本實施形態之基板洗淨裝置，於雙流體洗淨時，即使基板表面之液滴藉由基板旋轉而產生的離心力及藉由雙流體洗淨產生之側噴流而飛濺撞擊到旋轉護蓋，由於旋轉護蓋與基板在同一旋轉方向旋轉，因此與護蓋不旋轉時比較，可使液滴之撞擊速度減低。藉此，可抑制液滴從旋轉護蓋彈回，可防止液滴再度附著於基板表面。 According to the substrate cleaning apparatus of the present embodiment, even when the liquid droplet is cleaned, the centrifugal force generated by the rotation of the substrate on the surface of the substrate and the side jet generated by the two-fluid cleaning splash and hit the rotating cover. Since the rotating cover rotates in the same rotational direction as the substrate, the impact speed of the droplets can be reduced as compared with when the cover is not rotated. Thereby, it is possible to suppress the droplets from rebounding from the rotating cover, and it is possible to prevent the droplets from adhering again to the surface of the substrate.
此時，由於旋轉護蓋與基板以同一角速度旋轉，因此與旋轉護蓋與基板以不同角速度旋轉時(例如護蓋不旋轉時)比較，可使液滴之撞擊速度減低。 At this time, since the rotating cover rotates at the same angular velocity as the substrate, the impact speed of the liquid droplets can be reduced as compared with when the rotating cover and the substrate are rotated at different angular velocities (for example, when the cover is not rotated).
例如第六圖所示，固定護蓋情況下(護蓋不旋轉時)液滴之撞擊速度V為V1(=r1ω)，對於有時液滴(以大的相對速度撞擊護蓋之液滴)逆氣流飛濺於基板上，採用旋轉護蓋情況下(特別是旋轉護蓋與基板以同一角速度旋轉情況下)，液滴之撞擊速度V為V1-V2(=r1ω-r2ω≒0)，可減低液滴之撞擊速度。此時，液滴(以小的相對速度撞擊護蓋之液滴)可隨氣流從下部導出。另外，此處，r1係基板W之半徑，r2係旋轉護蓋內周面之半徑。又，ω係基板W與旋轉護蓋之角速度。 For example, as shown in the sixth figure, in the case of a fixed cover (when the cover is not rotated), the impact velocity V of the droplet is V 1 (= r 1 ω), for sometimes droplets (impacting the cover at a large relative speed) The droplets are splashed on the substrate by the reverse flow. When the rotating cover is used (especially when the rotating cover rotates at the same angular velocity as the substrate), the impact velocity V of the droplet is V 1 -V 2 (=r 1 ω- r 2 ω ≒ 0), which can reduce the impact velocity of the droplets. At this point, the droplets (droplets that hit the cover at a small relative velocity) can be withdrawn from the lower portion with the gas flow. Here, r 1 is the radius of the substrate W, and r 2 is the radius of the inner peripheral surface of the rotating cover. Further, the angular velocity of the ω-based substrate W and the spin cover.
又，本實施形態如第五圖所示，因為旋轉護蓋對基板W配置於最佳位置，所以可抑制液滴從旋轉護蓋彈回，可防止液滴再度附著於基板表面。 Further, in the fifth embodiment, since the rotating cover is disposed at the optimum position on the substrate W, it is possible to prevent the liquid droplets from being bounced back from the rotating cover, and it is possible to prevent the liquid droplets from adhering to the surface of the substrate again.
以上，係藉由例示說明本發明之實施形態，不過本發明之範圍不限定於此等，在申請專利範圍中記載之範圍內可依目的而變更、變形。 The embodiments of the present invention have been described above by way of example, and the scope of the present invention is not limited thereto, and may be modified or modified within the scope of the claims.
例如，以上之說明係說明在搖動臂44前端設有流體噴嘴(雙流體噴嘴)46與筆型洗淨工具60兩者之例，不過如第八圖所示，亦可在搖動臂44前端僅設置流體噴嘴(雙流體噴嘴)46。又，如第九圖所示，亦可在搖動臂44前端僅設置筆型洗淨工具60。再者，如第十圖所示，亦可在基板洗淨裝置18中設置使用超音波洗淨基板W表面之超音波洗淨機90。 For example, the above description shows an example in which both the fluid nozzle (two-fluid nozzle) 46 and the pen-type cleaning tool 60 are provided at the front end of the swing arm 44, but as shown in the eighth figure, only the front end of the swing arm 44 may be provided. A fluid nozzle (two-fluid nozzle) 46 is provided. Further, as shown in the ninth figure, only the pen type cleaning tool 60 may be provided at the front end of the swing arm 44. Further, as shown in FIG. 10, an ultrasonic cleaning machine 90 for cleaning the surface of the substrate W by ultrasonic waves may be provided in the substrate cleaning device 18.
又，如第十一圖所示，亦可將流體噴嘴(雙流體噴嘴)46設於基板之外周位置(邊緣位置)。可藉由該流體噴嘴(雙流體噴嘴)46洗 淨基板外周(邊緣)之表面。此時，亦可在流體噴嘴(雙流體噴嘴)46附近設有局部排氣機構80。可藉由該局部排氣機構80強化基板外周位置(邊緣位置)之排氣，並可抑制液滴的飛濺。另外，並不一定需要局部排氣機構80。亦即，亦可不設局部排氣機構80。 Further, as shown in the eleventh diagram, the fluid nozzle (two-fluid nozzle) 46 may be provided at the outer peripheral position (edge position) of the substrate. Can be washed by the fluid nozzle (two-fluid nozzle) 46 The surface of the outer perimeter (edge) of the substrate. At this time, a local exhaust mechanism 80 may be provided in the vicinity of the fluid nozzle (two-fluid nozzle) 46. The local exhaust mechanism 80 can strengthen the exhaust gas at the outer peripheral position (edge position) of the substrate, and can suppress the splash of the liquid droplets. In addition, the local exhaust mechanism 80 is not necessarily required. That is, the local exhaust mechanism 80 may not be provided.
又，亦可以朝向基板W旋轉方向之上游側噴出雙流體噴流的方式，以指定角度傾斜設置雙流體噴嘴46。例如，雙流體噴嘴46可從平面觀看朝向基板W旋轉方向之上游側，在與旋轉方向(切線方向)構成之角為0°~90°的範圍傾斜設置。第十二(a)圖之例係朝向基板W旋轉方向之上游側，以與旋轉方向(切線方向)構成之角為0°來設置雙流體噴嘴46。藉此，雙流體噴流對旋轉之基板的相對速度上昇，可使洗淨性能提高。第十二(b)圖之例係以與基板W旋轉方向(切線方向)構成之角為90°來設置雙流體噴嘴46。此時，雙流體噴流對旋轉之基板的相對速度不致降低，可(不致降低地)維持洗淨性能。 Further, the two-fluid nozzle 46 may be disposed at a predetermined angle so that the two-fluid jet can be ejected toward the upstream side in the rotation direction of the substrate W. For example, the two-fluid nozzle 46 is inclined from the plane toward the upstream side in the rotation direction of the substrate W, and is inclined in a range of 0 to 90 degrees with respect to the rotation direction (tangential direction). The example of the twelfth (a) is an upstream side of the rotation direction of the substrate W, and the two-fluid nozzle 46 is provided at an angle of 0° with respect to the rotation direction (tangential direction). Thereby, the relative speed of the two-fluid jet to the rotating substrate is increased, and the cleaning performance can be improved. In the twelfth (b)th example, the two-fluid nozzle 46 is provided at an angle of 90° with respect to the rotation direction (tangential direction) of the substrate W. At this time, the relative speed of the two-fluid jet to the rotating substrate is not lowered, and the cleaning performance can be maintained (without being lowered).
又，雙流體噴嘴46可從側面觀看朝向基板W旋轉方向之上游側，以與旋轉方向構成之角為45°~90°的範圍傾斜設置。此時，也可以說雙流體噴嘴46可從側面觀看朝向基板W旋轉方向之上游側，以與基板面構成之角為45°~90°的範圍傾斜設置。第十三(a)圖之例係朝向基板W旋轉方向之上游側，以與旋轉方向(基板面)構成之角為45°來設置雙流體噴嘴46。藉此，雙流體噴流對旋轉之基板的相對速度上昇，可使洗淨性能提高。第十三(b)圖之例係以與基板W旋轉方向(基板面)構成之角為90°來設置雙流體噴嘴46。此時，雙流體噴流對旋轉之基板的相對速度不致降低，可(不致降低地)維持洗淨性能。 Further, the two-fluid nozzle 46 can be viewed from the side toward the upstream side in the rotation direction of the substrate W, and inclined at a range of 45 to 90 degrees with respect to the rotation direction. At this time, it can be said that the two-fluid nozzle 46 can be viewed from the side toward the upstream side in the rotation direction of the substrate W, and is inclined so as to form an angle of 45 to 90 with respect to the substrate surface. The thirteenth (a) example is an upstream side of the rotation direction of the substrate W, and the two-fluid nozzle 46 is provided at an angle of 45 degrees with respect to the rotation direction (substrate surface). Thereby, the relative speed of the two-fluid jet to the rotating substrate is increased, and the cleaning performance can be improved. In the thirteenth (b) diagram, the two-fluid nozzle 46 is provided at an angle of 90° with respect to the rotation direction (substrate surface) of the substrate W. At this time, the relative speed of the two-fluid jet to the rotating substrate is not lowered, and the cleaning performance can be maintained (without being lowered).
第十四圖及第十五圖顯示具備氣流改善功能之基板洗淨裝置。該基板洗淨裝置18收容於機箱80，在機箱80之壁面上部設有一對通氣板81。此時通氣板81配置於比基板W高之位置(第十四圖中之上側)。在基板洗淨裝置18之上游側(第十四圖中之左側)鄰接設有第二基板搬送機器人26之基板搬送區82，在基板洗淨裝置18之下游側(第十四圖中之右側)鄰接設有第三基板搬送機器人28之基板搬送區83。在各基板搬送區82、83之上不分別設有送風單元84，通氣板81中設有將從送風單元84送風之氣體導入機箱80內部的氣體流入口85。送風單元84例如亦可採用以風扇吸入空氣並以濾清器清淨化的FFU(風扇濾清器單元)。藉由具備該送風單元84，因為可在用於搬送基板之基板搬送區82、83內，分別從垂直方向上方向下方輸送清淨空氣，所以可防止粒子等從下方飛舞，而防止污染在基板搬送區82、83內搬送中之基板。在機箱80之下部設有將機箱80內部氣體排出外部之氣體排出口86。該氣體排出口86亦可係上述之排出孔74。 The fourteenth and fifteenth figures show the substrate cleaning device with the airflow improvement function. The substrate cleaning device 18 is housed in the casing 80, and a pair of aeration plates 81 are provided on the wall surface of the casing 80. At this time, the ventilating plate 81 is disposed at a position higher than the substrate W (the upper side in the fourteenth drawing). The substrate transfer area 82 of the second substrate transfer robot 26 is disposed adjacent to the upstream side (the left side in FIG. 14) of the substrate cleaning device 18, on the downstream side of the substrate cleaning device 18 (the right side in FIG. The substrate transfer area 83 of the third substrate transfer robot 28 is adjacent to the substrate. The air blowing unit 84 is not provided on each of the substrate transfer areas 82 and 83. The air flow plate 85 is provided with a gas inflow port 85 for introducing the air blown from the air blowing unit 84 into the inside of the casing 80. The blower unit 84 may be, for example, an FFU (Fan Filter Unit) that takes in air by a fan and purifies it with a filter. By providing the air blowing unit 84, since the clean air can be transported from the vertical direction to the lower side in the substrate transfer areas 82 and 83 for transporting the substrate, particles and the like can be prevented from flying downward, and contamination can be prevented from being transported on the substrate. The substrates in the areas 82 and 83 are transported. A gas discharge port 86 for discharging the inside of the casing 80 to the outside is provided at a lower portion of the casing 80. The gas discharge port 86 may also be the discharge hole 74 described above.
採用此種基板洗淨裝置18時，係從設於機箱80相對之壁面的一對氣體流入口85流入氣體至機箱80內部。由於一對氣體流入口85配置於比基板W高之位置，因此從一對氣體流入口85流入之氣體在機箱80之中央部於基板W上方相遇形成下降氣流，而從機箱80下部之氣體排出口86排出外部。此時，機箱80內部之液滴或噴霧亦隨下降氣流而從機箱80下部的氣體排出口86排出外部。藉此，可抑制液滴或噴霧在機箱80內部蔓延，可抑制因液滴或噴霧再度附著造成污染、瑕疵(Defect)。此時，可利用鄰接於基板洗淨裝置18之基板搬送區82、83的送風單元84抑制液滴或噴霧在機箱80內部蔓延。 When such a substrate cleaning device 18 is used, gas is introduced into the inside of the casing 80 from a pair of gas inflow ports 85 provided on the wall surface of the casing 80. Since the pair of gas inflow ports 85 are disposed at a position higher than the substrate W, the gas flowing in from the pair of gas inflow ports 85 meets above the substrate W at the central portion of the chassis 80 to form a descending airflow, and the gas row from the lower portion of the chassis 80 The outlet 86 is discharged to the outside. At this time, the liquid droplets or the spray inside the casing 80 are also discharged to the outside from the gas discharge port 86 at the lower portion of the casing 80 in accordance with the downward flow. Thereby, it is possible to suppress the droplets or the spray from spreading inside the casing 80, and it is possible to suppress contamination and defect due to reattachment of the droplets or the spray. At this time, the air blowing unit 84 adjacent to the substrate transfer areas 82 and 83 of the substrate cleaning apparatus 18 can suppress the spread of droplets or spray inside the casing 80.
又，第十六圖及第十七圖顯示具備氣流改善功能之基板洗淨裝置的變形例。本例之通氣板81中連接有氣體供給管線87的氣體供給埠88，從氣體供給管線87供給之氣體(例如氮氣)從氣體流入口85供給至機箱80內部。另外，在氣體供給管線87中設有閥門89，可開始/停止(ON/OFF)控制氣體之供給。例如，在將基板W搬送至機箱80內部時，開始(ON)供給氣體，基板W洗淨後，將基板W從機箱向外部搬送時停止(OFF)供給氣體。 Further, the sixteenth and seventeenth drawings show a modification of the substrate cleaning apparatus having the airflow improving function. The gas supply port 87 of the gas supply line 87 is connected to the aeration plate 81 of this example, and the gas (for example, nitrogen gas) supplied from the gas supply line 87 is supplied from the gas inflow port 85 to the inside of the casing 80. Further, a valve 89 is provided in the gas supply line 87 to start/stop (ON/OFF) supply of the control gas. For example, when the substrate W is transported to the inside of the casing 80, the supply of gas is started (ON), and after the substrate W is washed, the supply of gas is stopped (OFF) when the substrate W is transported from the chassis to the outside.
即使依該變形例，仍可藉由從氣體供給管線87供給之氣體抑制液滴或噴霧在機箱80內部蔓延。此時，即使是例如無法利用鄰接於基板洗淨裝置18之基板搬送區82、83的送風單元84之狀況，仍可抑制液滴或噴霧在機箱80內部蔓延。 Even with this modification, it is possible to suppress the droplets or the spray from spreading inside the casing 80 by the gas supplied from the gas supply line 87. At this time, even if the air blowing unit 84 adjacent to the substrate transfer areas 82 and 83 of the substrate cleaning apparatus 18 cannot be used, for example, it is possible to suppress the droplets or the spray from spreading inside the casing 80.
第十八圖顯示具備抑制帶電之基板洗淨裝置。該基板洗淨裝置18具備：將具有導電性之藥劑供給至基板W的藥劑供給噴嘴64；及將沖洗液(例如純水)供給至基板W之沖洗液供給噴嘴62。該基板洗淨裝置18首先在搬入基板W時，係從藥劑供給噴嘴64供給具有導電性之藥劑至基板W表面(參照第十八(a)圖)，然後使雙流體噴流從雙流體噴嘴46噴出進行基板W之雙流體洗淨(參照第十八(b)圖)。進行雙流體洗淨時，應從藥劑供給噴嘴64持續供給具有導電性之藥劑。而後，雙流體洗淨結束後，從沖洗液供給噴嘴62供給沖洗液至基板W表面，來沖洗藥劑(參照第十八(c)圖)。 Fig. 18 shows a substrate cleaning apparatus with suppressed charging. The substrate cleaning device 18 includes a drug supply nozzle 64 that supplies a conductive agent to the substrate W, and a rinse liquid supply nozzle 62 that supplies a rinse liquid (for example, pure water) to the substrate W. The substrate cleaning device 18 first supplies a conductive agent from the drug supply nozzle 64 to the surface of the substrate W when the substrate W is carried in (see FIG. 18(a)), and then causes the two-fluid jet to flow from the two-fluid nozzle 46. The two-fluid cleaning of the substrate W is performed by ejecting (refer to Fig. 18(b)). When the two-fluid cleaning is performed, the conductive agent is continuously supplied from the drug supply nozzle 64. Then, after the completion of the two-fluid cleaning, the rinse liquid is supplied from the rinse liquid supply nozzle 62 to the surface of the substrate W to rinse the drug (see Fig. 18(c)).
採用此種基板洗淨裝置18時，由於係從藥劑供給噴嘴64供給具有導電性之藥劑，因此可抑制基板W表面之帶電量。藉此，可抑制雙流體洗淨造成基板表面之帶電量，可抑制因帶電之微粒子附著於基板W而造 成污染、瑕疵(Defect)。 When such a substrate cleaning device 18 is used, since the conductive agent is supplied from the drug supply nozzle 64, the amount of charge on the surface of the substrate W can be suppressed. Thereby, the amount of charge on the surface of the substrate caused by the cleaning of the two fluids can be suppressed, and the adhesion of the charged fine particles to the substrate W can be suppressed. It becomes pollution and defect.
另外，雙流體噴嘴46亦可由導電性構件(例如導電性聚二醚酮(PEEK)等)構成。即使採用此種構成仍可抑制從雙流體噴嘴46噴出之液滴的帶電量。因此，可抑制因雙流體洗淨造成基板表面之帶電量，可抑制因帶電之微粒子附著於基板W而造成污染、瑕疵(Defect)。 Further, the two-fluid nozzle 46 may be composed of a conductive member (for example, conductive polydiether ketone (PEEK) or the like). Even with such a configuration, the amount of charge of the liquid droplets ejected from the two-fluid nozzle 46 can be suppressed. Therefore, it is possible to suppress the amount of charge on the surface of the substrate due to the cleaning of the two fluids, and it is possible to suppress contamination and defect due to adhesion of charged fine particles to the substrate W.
又，與二氧化碳氣體溶解水等洗淨液比較，載氣(氮氣等)之流速大，因此，與洗淨液供給管線52比較，載氣(氮氣等)之載氣供給管線50容易帶電。因此，除了雙流體噴嘴46之外，形成連接於雙流體噴嘴46之載氣供給管線50的構件亦使用導電性構件，藉由在載氣供給管線50從機箱80露出之點，以接地(Earth)之方式使導線101與載氣供給管線50連接，可進一步有效防止帶電(參照第十八(a)圖)。如此構成時，因為可抑制帶電之微粒子附著於基板W，所以亦可不設藥劑供給噴嘴64(此時，亦可不設沖洗液供給噴嘴62)。又，在比基板洗淨裝置18下游設有以沖洗液洗淨基板W之洗淨單元情況下，雖可設置藥劑供給噴嘴64，但是亦可不設沖洗液供給噴嘴62。 Further, since the flow rate of the carrier gas (nitrogen gas or the like) is large as compared with the cleaning liquid such as carbon dioxide gas dissolved water, the carrier gas supply line 50 of the carrier gas (nitrogen gas or the like) is easily charged as compared with the cleaning liquid supply line 52. Therefore, in addition to the two-fluid nozzle 46, the member forming the carrier gas supply line 50 connected to the two-fluid nozzle 46 also uses a conductive member, and is grounded at a point where the carrier gas supply line 50 is exposed from the chassis 80 (Earth) In the manner of connecting the wire 101 to the carrier gas supply line 50, it is possible to further effectively prevent charging (refer to Fig. 18(a)). According to this configuration, since the charged fine particles can be prevented from adhering to the substrate W, the chemical supply nozzle 64 may not be provided (in this case, the rinse liquid supply nozzle 62 may not be provided). Further, in the case where the cleaning unit for washing the substrate W with the rinsing liquid is provided downstream of the substrate cleaning device 18, the drug supply nozzle 64 may be provided, but the rinsing liquid supply nozzle 62 may not be provided.
另外，關於本發明之基板洗淨裝置具有的上述氣流改善功能(參照第十四圖~第十七圖)，除了使用雙流體噴嘴的基板洗淨裝置之外，亦可適用於使用筆型洗淨工具等搖動洗淨機構或超音波洗淨機構的基板洗淨裝置。又，如上述以導電性構件構成之雙流體噴嘴及載氣供給管線，除了具有本實施例中記載之可旋轉護蓋的基板洗淨裝置之外，亦可適用於具有固定護蓋之基板洗淨裝置。 Further, the airflow improving function (see FIGS. 14 to 17) of the substrate cleaning apparatus of the present invention can be applied to the use of a pen type washing machine in addition to the substrate cleaning device using the two-fluid nozzle. A substrate cleaning device such as a net tool or a shaking cleaning mechanism or an ultrasonic cleaning mechanism. Further, the two-fluid nozzle and the carrier gas supply line formed of the conductive member described above may be applied to a substrate washing device having a fixed cover in addition to the substrate cleaning device having the rotatable cover described in the present embodiment. Net device.
如以上，本發明之基板洗淨裝置進行雙流體洗淨時，具有可抑制液滴從護蓋彈回，防止液滴再度附著於基板表面之效果，可利用於半導體晶圓之洗淨等。 As described above, when the substrate cleaning apparatus of the present invention performs the two-fluid cleaning, it is possible to suppress the droplets from rebounding from the cover and prevent the droplets from adhering again to the surface of the substrate, and can be used for cleaning the semiconductor wafer or the like.
1‧‧‧基板保持機構 1‧‧‧Substrate retention mechanism
2‧‧‧馬達(基板旋轉機構、護蓋旋轉機構) 2‧‧‧Motor (substrate rotation mechanism, cover rotation mechanism)
3‧‧‧旋轉護蓋 3‧‧‧Rotary cover
18‧‧‧第二洗淨單元(基板洗淨裝置) 18‧‧‧Second cleaning unit (substrate cleaning device)
46‧‧‧流體噴嘴(雙流體噴嘴) 46‧‧‧Fluid nozzle (two-fluid nozzle)
70‧‧‧夾盤 70‧‧‧ chuck
71‧‧‧台座 71‧‧‧ pedestal
72‧‧‧載台 72‧‧‧ stage
73‧‧‧支撐軸 73‧‧‧Support shaft
74‧‧‧排出孔 74‧‧‧Exhaust hole
75‧‧‧固定護蓋 75‧‧‧Fixed cover
W‧‧‧基板 W‧‧‧Substrate
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| JPH0795540B2 (en) * | 1988-04-11 | 1995-10-11 | 株式会社日立製作所 | Method and apparatus for cleaning both sides of substrate using ultrasonic cleaning spray nozzle |
| JPH1070100A (en) * | 1996-08-27 | 1998-03-10 | Matsushita Electric Ind Co Ltd | Substrate treatment equipment |
| JPH11283948A (en) * | 1998-03-27 | 1999-10-15 | Dainippon Screen Mfg Co Ltd | Substrate rotation processing device |
| JP2000153210A (en) * | 1998-11-19 | 2000-06-06 | Hitachi Ltd | Rotary substrate treating device |
| JP3973196B2 (en) * | 2001-12-17 | 2007-09-12 | 東京エレクトロン株式会社 | Liquid processing method and liquid processing apparatus |
| JP4040906B2 (en) * | 2002-05-20 | 2008-01-30 | 芝浦メカトロニクス株式会社 | Spin processing equipment |
| JP2004349470A (en) | 2003-05-22 | 2004-12-09 | Dainippon Screen Mfg Co Ltd | Device and method for substrate processing |
| KR100790273B1 (en) * | 2003-12-12 | 2007-12-31 | 동부일렉트로닉스 주식회사 | Pencil sponge cleaning apparatus and method thereof |
| JP4464850B2 (en) | 2004-03-09 | 2010-05-19 | 株式会社ルネサステクノロジ | Substrate cleaning two-fluid nozzle and substrate cleaning device |
| JP2006114884A (en) * | 2004-09-17 | 2006-04-27 | Ebara Corp | Substrate cleaning processing apparatus and substrate processing unit |
| JP2006286947A (en) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | Method and apparatus for cleaning electronic device |
| JP2006286665A (en) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | Method and apparatus for cleaning electronic device |
| JP4753757B2 (en) * | 2006-03-15 | 2011-08-24 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| TW200802579A (en) * | 2006-04-18 | 2008-01-01 | Tokyo Electron Ltd | Liquid processing apparatus |
| EP1848024B1 (en) * | 2006-04-18 | 2009-10-07 | Tokyo Electron Limited | Liquid processing apparatus |
| JP4638402B2 (en) | 2006-10-30 | 2011-02-23 | 大日本スクリーン製造株式会社 | Two-fluid nozzle, and substrate processing apparatus and substrate processing method using the same |
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