TWI724846B - Sensing device and sensing method - Google Patents

Abstract

A sensing device includes multiple stages of sensing circuits. The multiple stages of sensing circuits include an nth stage sensing circuit. The nth stage sensing circuit includes a first switch, a second switch and a third switch. A first terminal of the first switch is coupled to a data line. The first switch is configured to turn on according to an nth stage scanning signal. A first terminal of a third switch is coupled to a second terminal of the first switch. The third switch is configured to turn on according to a control signal, wherein when the third switch is turned on, a voltage level of the first terminal of the third switch is equal to a voltage level of the first terminal of the first switch. A sensing method is also disclosed herein.

Description

Sensing device and sensing method

The present invention relates to a sensing technology, in particular to a sensing device and a sensing method of a sensing panel.

When a sensing circuit in the sensing device is not performing a sensing operation, it is likely to be affected by leakage currents from other sensing circuits and read erroneous signals. Therefore, the leakage current that causes false signals in the sensing device is a problem that needs to be solved.

An embodiment of this case discloses a sensing device including a multi-level sensing circuit. The multi-level sensing circuit includes an n-th level sensing circuit. The n-th level sensing circuit includes a first switch, a second switch, and a third switch. The first terminal of the first switch is coupled to a data line, and the first switch is turned on according to the nth level scanning signal. The first end of the second switch is coupled to the second end of the first switch, the second end of the second switch is coupled to a sensing element, and the second switch is turned on according to the n-th level scanning signal. The first terminal of the third switch is coupled to the second terminal of the first switch. The third switch is turned on according to a control signal. When the third switch is turned on, the voltage level of the first terminal of the third switch is the same as that of the first terminal. The voltage levels of the first terminals of the switches are equal, where n is a positive integer.

Another embodiment of this case discloses a sensing method, including the following operations. A sensing operation is performed by one of the (n+1)-th level sensing circuits in the multi-level sensing circuit, wherein one of the n-th level sensing circuits in the multi-level sensing circuit includes a first switch, a first Two switches and a third switch, the first switch and the second switch are controlled by an n-th stage scan signal, a first end of the first switch is coupled to a data line, and a second end of the first switch A first terminal of the second switch is coupled to an operating node, a second terminal of the second switch is coupled to a sensing element, and the third switch is coupled to the first switch and the second switch during the operation node. When the (n+1)th level sensing circuit performs the sensing operation, the third switch in the nth level sensing circuit is turned on, so that a voltage level of the operating node is equal to the voltage level of the first switch. The voltage levels of one of the first terminals are equal, where n is a positive integer.

In this text, when an element is referred to as “connected” or “coupled”, it can be referred to as “electrically connected” or “electrically coupled”. "Connected" or "coupled" can also be used to mean that two or more components cooperate or interact with each other. In addition, although terms such as “first”, “second”, etc. are used herein to describe different elements, the terms are only used to distinguish elements or operations described in the same technical terms. Unless the context clearly indicates, the terms do not specifically refer to or imply order or sequence, nor are they used to limit the present invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

Several implementations of this case will be disclosed in the following diagrams. For the sake of clarity, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit the case. In other words, in some implementations of the present disclosure, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventionally used structures and elements will be shown in a simple schematic manner in the drawings.

FIG. 1 is a schematic diagram of a sensing panel according to an embodiment of the present invention. Please refer to Figure 1, the sensing panel 100 includes a gate scanner 110, a sensing reader 120, a sensing device 130, a plurality of gate lines GL(1)-GL(n+1) and a plurality of data lines DL(1)-DL(m). The sensing device 130 includes a multi-level sensing circuit, wherein the multi-level sensing circuit includes an n-th level sensing circuit 132 and an (n+1)-th level sensing circuit 134. Both n and m are positive integers.

The gate scanner 110 is coupled to a plurality of gate lines GL(1)-GL(n+1), and is used to provide scanning signals. The sensor reader 120 is coupled to a plurality of data lines DL(1)-DL(m), and is used to provide data signals to read the sensor signals. In some embodiments, the n-th level sensing circuit 132 is coupled to the gate line GL(n) and the data line DL(m). In some embodiments, the (n+1)th level sensing circuit 134 is coupled to the gate line GL(n+1) and the data line DL(m).

In operation, the gate scanner 110 sequentially provides a scan signal to the sensing circuit of each row. When the sensing circuit is triggered by the scan signal, the data lines DL(1)-DL(m) provide a data signal to the sensing circuit. The sensing circuit enables the sensing reader 120 to read the sensing signals sensed by the sensing elements in the sensing circuit, and the sensing reader 120 reads the sensing of all sensing circuits in the sensing device 130 After the signal, the sensor reader 120 can obtain a complete sensor image.

FIG. 2 is a circuit diagram of the sensing device in FIG. 1 according to an embodiment of the present application. Please refer to Figure 2. For the convenience of description, Figure 2 only shows two of the sensing circuits in the sensing device 130, namely the n-th sensing circuit 132 and the (n+1)-th sensing circuit 134 .

The n-th level sensing circuit 132 includes a switch 212, a switch 214, a switch 216, and a sensing element 218. The (n+1)th level sensing circuit 134 includes a switch 222, a switch 224, a switch 226, and a sensing element 228. In some embodiments, the switch 212, the switch 214, and the switch 216 are implemented by thin film transistors (TFT), but the present case is not limited to this, and can also be implemented by other devices with switching functions.

As shown in FIG. 2, the first end of the switch 212 is coupled to the data line DL(m) at the node 2121, and the switch 212 and the switch 214 are used to conduct in accordance with the n-th scan signal G(n). In some embodiments, the nth level scan line GL(n) is used to provide the nth level scan signal G(n).

As shown in FIG. 2, the first terminal of the switch 214 is coupled to the second terminal of the switch 212 at the node 2122, and the second terminal of the switch 214 is coupled to the sensing element 218 at the node 2142. The first terminal of the switch 216 is coupled to the second terminal of the switch 212 at the node 2122, and the switch 216 is used to turn on according to the control signal K(n). In some embodiments, the sensing element 218 can be implemented by a photosensitive element or a pressure sensing element, but the present case is not limited to this, and can also be implemented by other sensing elements that sense different types of signals.

When the switch 216 is turned on, the voltage level of the node 2122 is pulled to a predetermined voltage level, so that the node signal Q(n) is also pulled to the predetermined voltage level, and the node 2122 is not turned on. The voltage levels of 2121 and 2122 are equal. Therefore, in some embodiments, when the switch 216 is turned on, the voltage levels at both ends of the switch 212 are equal to ensure that the current flowing through the switch 212 is zero when the switch 212 is not turned on. In some embodiments, when the switch 216 is turned on, the leakage current generated by the sensing element 218 cannot pass through the switch 212 to the data line DL(m), thereby preventing false signals caused by the leakage current from being read by the data line.

In some embodiments, when the nth level scan signal G(n) is switched to the enable voltage level (eg, high voltage level), the nth level sensing circuit 132 performs a sensing operation, and the data line DL(m ) The sensing signal D(n) is read. Therefore, the time when the nth level scan signal G(n) is switched to the enable voltage level is also referred to as the nth level sensing circuit 132 being in the reading stage. Conversely, in some embodiments, when the nth level scan signal G(n) is switched to the disable voltage level (eg, low voltage level), the nth level sensing circuit 132 does not perform a sensing operation, and the data line DL (m) The sensing signal D(n) cannot be read. Therefore, the time when the nth level scan signal G(n) is switched to the disable voltage level is also referred to as the nth level sensing circuit 132 being in the non-reading stage.

In some embodiments, the second terminal of the switch 216 (ie, the node 2162) is used to receive a voltage signal when the (n+1)th level sensing circuit 134 is in the reading phase, and the voltage level of the voltage signal may be the same as that of the node The voltage levels of 2121 are equal, so switch 216 can provide a voltage signal equal to the voltage level of node 2121 to node 2122, so that the voltage levels of both ends of switch 212 are equal to ensure that the switch 212 is not conducting. The current of the switch 212 is zero. Therefore, in some embodiments, when the (n+1)th level sensing circuit 134 is in the read phase, when the switch 212 is not conducting, the leakage current flowing through the switch 212 is zero, so that the data line DL( m) When reading the sensing signal of the (n+1)-th level sensing circuit 134, the sensing signal sensed by the sensing element 218 in the n-th level sensing circuit 132 cannot be read through the switch 212.

In some embodiments, the voltage level of the voltage signal received by the second terminal of the switch 216 (ie, the node 2162) can also be set to a reference voltage value according to actual requirements.

In some embodiments, the second terminal (ie node 2162) of the switch 216 is used to receive a voltage signal when the nth level sensing circuit 132 is in the non-reading phase, and the voltage level of the voltage signal is the same as the voltage level of the node 2121. The positions are equal, so the switch 216 can provide a voltage signal equal to the voltage level of the node 2121 to the node 2122, so that the current flowing through the first switch 212 is zero. Therefore, in some embodiments, when the nth level sensing circuit 132 is in the non-reading phase, the leakage current flowing through the switch 212 is zero, so that the sensing element 218 in the nth level sensing circuit 132 senses The sensing signal of is not read by the data line DL(m) through the switch 212.

In some embodiments, the second terminal (ie, node 2162) of the switch 216 is used to receive a DC voltage signal. As shown in Figure 2, in some embodiments, the power line DC is used to provide the DC voltage signal. In some embodiments, the voltage level of the DC voltage signal is equal to the voltage level of the node 2121.

As shown in FIG. 2, in some embodiments, the (n-1)th level scan line GL(n-1) is used to provide the (n-1)th level scan signal G(n-1). In some embodiments, the (n+1)th scan line GL(n+1) is used to provide the (n+1)th scan signal G(n+1). In some embodiments, the power line Vc(n) and the power line Vc(n+1) are used to provide low-level DC voltage signals. The low-level DC voltage signals enable the sensing element 218 and the sensing element 228 to be working normally.

FIG. 3 is a timing diagram of an embodiment of a sensing operation according to the present application. Please refer to FIGS. 2 and 3. In the embodiment shown in FIG. 3, during the period P31, the n-th sensing circuit 132 is in the non-reading phase, and the control signal K(n) is maintained at the high voltage level. By turning on the switch 216, the voltage level of the node 2122 is equal to the voltage level of the node 2121, that is, the voltage levels at both ends of the switch 212 are equal to ensure that the current flowing through the switch 212 is zero when the switch 212 is not conducting. .

In the period P32, the (n-1)th level sensing circuit is in the reading phase, so the (n-1)th level scan signal G(n-1) is switched to a high voltage level, so that the data line can read the (n-1)th level. -1) Sensing signal of class sensing circuit.

During the period P33, the nth level sensing circuit 132 is in the reading phase, so the nth level scan signal G(n) is switched to the high voltage level to turn on the switch 212 and the switch 214, and the control signal K(n) is switched to the low voltage level. To turn off the switch 216, the voltage level of the node signal Q(n) is at the floating voltage level. At this time, the data line DL(m) can read the sensing signal D(n) through the switch 212 and the switch 214.

During the period P34, the nth level sensing circuit 132 is in the non-reading phase and the (n+1)th level sensing circuit 134 is in the reading phase, so the nth level scanning signal G(n) is switched to the low voltage level to The switch 212 and the switch 214 are closed, and the control signal K(n) is switched to a high voltage level to turn on the switch 216, so that the voltage level of the node 2122 is equal to the voltage level of the node 2121, that is, the voltage levels of both ends of the switch 212 are equal to Ensure that when the switch 212 is not conducting, the current flowing through the switch 212 is zero.

In some embodiments, during the period P34, the (n+1)th level sensing circuit 134 is in the reading phase, the (n+1)th level scan signal G(n+1) is switched to a high voltage level, and the control signal K (n+1) is switched to the low voltage level to perform the sensing operation of the (n+1)th level sensing circuit 134.

In some embodiments, the control signal K(n) is provided by a signal generator or other signal sources (such as a waveform generator, a function generator, etc.).

FIG. 4 is a timing diagram of another embodiment of the sensing operation according to the present application. Please refer to FIG. 2 and FIG. 4, the operations in the period P41 to the period P43 are the same as the operations in the period P31 to the period P33 in the embodiment shown in FIG. 3, so the description will not be repeated. The difference between the embodiment in FIG. 4 and the embodiment in FIG. 3 is in the period P44 and the period P45.

In the period P44, after the nth-level sensing circuit 132 reads in the period P42, the node signal Q(n) is maintained at the same voltage level as the voltage level of the node 2121, so that the voltage levels at both ends of the switch 212 are the same. To ensure that when the switch 212 is not turned on, the current flowing through the switch 212 is zero, so the control signal K(n) can be maintained at a low voltage level and the switch 216 remains closed until the period P45.

In some embodiments, the node signal Q(n) is maintained at the same voltage level as the voltage level of the node 2121 by the parasitic capacitance of the node 2122.

During the period P45, the control signal K(n) is switched to the high voltage level to turn on the switch 216, so that the voltage level of the node 2122 is equal to the voltage level of the node 2121.

In some embodiments, the period P45 occurs before all the sensing circuits have been scanned to obtain a complete sensing image, or the next sensing image is to be read and the gate scanner 110 starts to provide the next round of scanning. Before the signal, so as to avoid excessive discharge of the parasitic capacitance of the node 2122 and the node 2122 cannot be maintained at the same voltage level as the voltage level of the node 2121 for a long time.

FIG. 5 is a circuit diagram of the sensing device in FIG. 1 according to an embodiment of the present application. Compared with FIG. 2, FIG. 5 further includes a switch 512, a switch 514 and a capacitor 516.

As shown in FIG. 5, in some embodiments, the control terminal of the switch 512 is coupled to the (n-1)th scan line GL(n-1), and the first terminal of the switch 512 is coupled to the nth scan line GL (n), the second terminal of the switch 512 is coupled to the control terminal of the switch 216. In some embodiments, the control terminal of the switch 514 and the second terminal of the switch 514 are coupled to the (n+1)th scan line GL(n+1), and the first terminal of the switch 514 is coupled to the control terminal of the switch 216. In some embodiments, the first terminal of the capacitor 516 is coupled to the control terminal of the switch 216, and the second terminal of the capacitor 516 is coupled to the power line DC.

In some embodiments, the switch 512 and the switch 514 are used to adjust the control signal K(n). In some embodiments, the n-th level sensing circuit 132 has only the switch 512 and no switch 514. In other embodiments, the n-th level sensing circuit 132 has only the switch 514 and no switch 512. In different embodiments, the control signal K(n) can be adjusted in different ways. The above-mentioned different ways include using different switch combinations.

Fig. 6 is a timing diagram of an embodiment of a sensing operation according to the present application. Please refer to FIGS. 5 and 6. In the embodiment shown in FIG. 6, during the period P61, the n-th sensing circuit 132 is in the non-reading phase, and the control signal K(n) is maintained at the high voltage level. By turning on the switch 216, the voltage level of the node 2122 is equal to the voltage level of the node 2121, that is, the voltage levels at both ends of the switch 212 are equal to ensure that the current flowing through the switch 212 is zero.

During the period P62, the (n-1)th level sensing circuit is in the reading phase, and the (n-1)th level scanning signal G(n-1) is switched to the high voltage level to turn on the switch 512. At this time, the nth level sensing circuit is switched on. The test circuit 132 is in the non-reading stage, so the voltage level of the n-th scan signal G(n) is at a low voltage level, the switches 212 and 214 are closed, and the control signal K(n) is pulled to a low voltage through the switch 512 The switch 216 is closed at the level, so that the three switches (switch 212, switch 214, and switch 216) coupled to the node 2122 are all closed, so that the voltage level of the node signal Q(n) is the floating voltage level, which is The n-th level sensing circuit 132 prepares for the read phase.

During the period P63, the nth level sensing circuit 132 is in the reading phase, so the nth level scan signal G(n) is switched to a high voltage level to turn on the switch 212 and the switch 214. The switch 512 and the switch 514 are respectively (n-th) 1) The level scan signal G(n-1) and the (n+1)th level scan signal G(n+1) are turned off so that the control signal K(n) is maintained at a low voltage level, so the control signal K(n) is turned off The switch 216 makes the switch 216 unable to provide a voltage signal to the node 2122. At this time, the data signal of the data line DL(m) charges the sensing signal D(n) to a high voltage level through the switch 212 and the switch 214, and the data line DL( m) Read the sensing signal D(n).

During the period P64, the nth level sensing circuit 132 is in the non-reading stage and the (n+1)th level sensing circuit 134 is in the reading stage, so the nth level scanning signal G(n) is switched to the low voltage level to The switch 212 and the switch 214 are closed, the (n+1)th scan signal G(n+1) turns on the switch 514 and the control signal K(n) is pulled to the high voltage level to turn on the switch 216, so that the voltage level of the node 2122 is Pull to a voltage level equal to the voltage level of the node 2121, that is, the voltage levels at both ends of the switch 212 are equal to ensure that the current flowing through the switch 212 is zero when the switch 212 is not turned on.

In some embodiments, the capacitor 516 is used to maintain the control signal K(n). For example, in the period P64, the control signal K(n) is pulled to a high voltage level, and the capacitor 516 is charged by the control signal K(n). After the period P64, the (n+1)th level sensing circuit 134 is in a non-active state. In the reading phase, the (n+1)th scan signal G(n+1) is switched to a low voltage level and the switch 514 is closed. At this time, the capacitor 516 can maintain the voltage level of the node 5122, so that the control signal K(n ) Maintain the high voltage level to turn on the switch 216.

FIG. 7 is a flowchart of the sensing method according to an embodiment of the present application. As shown in FIG. 7, an embodiment of the sensing method 700 includes steps S10 and S12. The sensing method 700 can be applied to the sensing device 130 shown in FIG. 2.

Please refer to FIG. 7 and FIG. 2. Step S10 includes: performing a sensing operation by one of the (n+1)-th level sensing circuits 134 in the multi-level sensing circuit, wherein one of the multi-level sensing circuits An nth level sensing circuit 132 includes a switch 212, a switch 214, and a switch 216. The switch 212 and the switch 214 are controlled by the nth level scan signal G(n). The first end of the switch 212 is coupled to the data line DL(m). The second end of the switch 212 is coupled to the first end of the switch 214 at node 2122, the second end of the switch 214 is coupled to a sensing element 218, and the switch 216 is coupled to the switch 212 and the switch 214 at node 2122, where n is a positive integer .

In some embodiments, the sensing element 218 is used to sense an external signal to generate a sensing signal, and the data line DL(m) is used to provide a data signal when the n-th level sensing circuit 132 performs a sensing operation Read the sensing signal. In some embodiments, the nth level sensing circuit 132 is also referred to as the nth level sensing circuit 132 in the reading phase when performing a sensing operation. In some embodiments, when the nth level sensing circuit 132 performs a sensing operation, the nth level scan signal G(n) is at a high voltage level.

Step S12 includes: when the (n+1)th level sensing circuit 134 performs a sensing operation, turning on the switch 216 in the nth level sensing circuit 132, so that the voltage level of the node 2122 is equal to the voltage level of the node 2121 , That is, the voltage levels at both ends of the switch 212 are equal to ensure that the current flowing through the switch 212 is zero when the switch 212 is not conducting.

In some embodiments, the sensing method 700 shown in FIG. 7 may be applied to the sensing device 130 shown in FIG. 5. The sensing method 700 further includes: when the (n+1)th level sensing circuit 134 During the sensing operation, a voltage signal is transmitted to the node 2122 through the switch 216, and the voltage level of the voltage signal is equal to the voltage level of the node 2121.

In some embodiments, the sensing method 700 shown in FIG. 7 can be applied to the sensing device 130 shown in FIG. 5. The sensing method 700 further includes: when the (n-1)-th level sensing circuit performs During the sensing operation, the switch 216 is turned off by the n-th level scan signal G(n), so that the voltage level of the node signal Q(n) is a floating voltage level, so that the subsequent n-th level sensing circuit 132 can perform sensing Operation, where n is greater than or equal to two.

In some embodiments, the sensing method 700 shown in FIG. 7 may be applied to the sensing device 130 shown in FIG. 5. The sensing method 700 further includes: when the n-th level sensing circuit 132 performs a sensing operation At this time, the switch 212 is turned on by the scan signal G(n) of the nth level.

In summary, the sensing device and sensing method of an embodiment of the present invention can greatly reduce the leakage current from the sensing circuit in the non-reading phase during sensing, thereby reducing the problem of false signals caused by the leakage current, and then Improve signal quality.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100: Sensing panel 110: Gate Scanner 120: sensor reader 130: sensing device 132: nth level sensing circuit 134: (n+1) level sensing circuit 212~216: switch 218: sensing element 222~226: switch 228: sensing element 2121: Node 2122: Node 2142: Node 2162: Node 512~514: switch 516: Capacitor 5122: Node 700: sensing method DL(1)~DL(m): data line GL(1)~GL(n+1): gate line K(n): control signal K(n+1): control signal Q(n): node signal Q(n+1): node signal G(n-1): (n-1) level scan signal G(n): nth level scan signal G(n+1): (n+1)th level scan signal D(n): sense signal D(n+1): sensing signal DC: power cord Vc(n): power cord Vc(n+1): power cord P31~P34: period P41~P45: period P61~P64: Period S10: steps S12: steps

FIG. 1 is a schematic diagram of a sensing panel according to an embodiment of the present invention. FIG. 2 is a circuit diagram of the sensing device in FIG. 1 according to an embodiment of the present application. FIG. 3 is a timing diagram of an embodiment of a sensing operation according to the present application. FIG. 4 is a timing diagram of another embodiment of the sensing operation according to the present application. FIG. 5 is a circuit diagram of the sensing device in FIG. 1 according to an embodiment of the present application. Fig. 6 is a timing diagram of an embodiment of a sensing operation according to the present application. Figure 7 is a flow chart drawn according to an embodiment of the present case.

Domestic deposit information (please note in the order of deposit institution, date and number) no Foreign hosting information (please note in the order of hosting country, institution, date, and number) no

130: sensing device

132: nth level sensing circuit

134: (n+1) level sensing circuit

212~216: switch

218: sensing element

222~226: switch

228: sensing element

2121: Node

2122: Node

2142: Node

2162: Node

DL(m): data line

GL(n-1), GL(n), GL(n+1): gate line

K(n): control signal

K(n+1): control signal

Q(n): node signal

Q(n+1): node signal

G(n): nth level scan signal

G(n+1): (n+1)th level scan signal

D(n): sense signal

D(n+1): sensing signal

DC: power cord

Vc(n): power cord

Vc(n+1): power cord

Claims (10)

A sensing device includes: The multi-level sensing circuit includes an n-th level sensing circuit, and the n-th level sensing circuit includes: A first switch, a first end of the first switch is coupled to a data line, and the first switch is turned on according to an n-th level scanning signal; A second switch, a first end of the second switch is coupled to a second end of the first switch, a second end of the second switch is coupled to a sensing element, and the second switch is used for The nth level scan signal is turned on; and A third switch, a first end of the third switch is coupled to the second end of the first switch, the third switch is used to turn on according to a control signal, wherein when the third switch is turned on, the third switch A voltage level of the first terminal of the switch is equal to a voltage level of the first terminal of the first switch, where n is a positive integer. The sensing device according to claim 1, wherein a second terminal of the third switch is used to receive a voltage signal when a (n+1)-th level sensing circuit is in a reading phase, wherein the voltage signal A voltage level is equal to the voltage level of the first terminal of the first switch. The sensing device according to claim 1, wherein a second terminal of the third switch is used to receive a voltage signal when the third switch is turned on, wherein a voltage level of the voltage signal is equal to that of the first switch The voltage levels of the first terminals are equal. The sensing device according to claim 3, wherein the second terminal of the third switch is used for receiving a DC voltage signal. The sensing device according to claim 1, further comprising: A fourth switch for turning on according to an (n+1)th stage scanning signal, a first end of the fourth switch is coupled to a control end of the third switch, and a second end of the fourth switch is used for To receive the (n+1)th level scanning signal. The sensing device according to claim 1, further comprising: A fourth switch for turning on according to a (n-1)th level scanning signal, a first end of the fourth switch is coupled to a control end of the third switch, and a second end of the fourth switch is used for To receive the nth level scanning signal, where n is greater than or equal to two. A sensing method, including: A sensing operation is performed by one of the (n+1)-th level sensing circuits in the multi-level sensing circuit, wherein one of the n-th level sensing circuits in the multi-level sensing circuit includes a first switch, a first Two switches and a third switch, the first switch and the second switch are controlled by an n-th stage scan signal, a first end of the first switch is coupled to a data line, and a second end of the first switch A first terminal of the second switch is coupled to an operating node, a second terminal of the second switch is coupled to a sensing element, and the third switch is coupled to the first switch and the second switch during the operation Node; and When the (n+1)th level sensing circuit performs the sensing operation, the third switch in the nth level sensing circuit is turned on, so that a voltage level of the operating node is equal to the voltage level of the first switch. The voltage levels of one of the first terminals are equal, where n is a positive integer. The sensing method described in claim 7 further includes: When the (n+1)th level sensing circuit performs the sensing operation, the third switch transmits a voltage signal to the operating node, a voltage level of the voltage signal and the first switch of the first switch The voltage levels at one end are equal. The sensing method described in claim 7 further includes: When the (n-1)th level sensing circuit performs a sensing operation, the third switch is turned off by an nth level scan signal, where n is greater than or equal to two. The sensing method described in claim 7 further includes: When the nth level sensing circuit performs a sensing operation, the first switch is turned on by an nth level scan signal.

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