TWI722002B - 製造電子組件或晶粒的方法 - Google Patents

製造電子組件或晶粒的方法 Download PDF

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TWI722002B
TWI722002B TW105123438A TW105123438A TWI722002B TW I722002 B TWI722002 B TW I722002B TW 105123438 A TW105123438 A TW 105123438A TW 105123438 A TW105123438 A TW 105123438A TW I722002 B TWI722002 B TW I722002B
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electronic components
chip
carrier
wafer
individual
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TW105123438A
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TW201712806A (en
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夏威爾 布朗
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美商英特爾公司
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Abstract

某些示範形式係有關一種製造超薄晶片的方法。該方法包括將包括多個電子組件之一晶片附接至包括一黏著劑之一載體晶片；將該多個晶粒分離為個別的電子組件，其中將該多個晶粒分離為個別的電子組件包括將該晶片薄化與切割；將形成該晶片之個別的電子組件之任一個執行塗佈、劃線或標記的至少其中之一；以及將該多個電子組件從該載體晶片移除，其中將該多個電子組件從該載體晶片移除包括進行將該載體暴露在紫外線輻射或將該晶片之溫度提升的至少其中之一。

Description

製造電子組件或晶粒的方法
本發明係有關於製造超薄晶片的方法。
發明背景
製造包括超薄與高度翹曲晶片之電子組件時，會有各種不同與其相關聯的困難。如一範例中，製造包括矽穿孔及/或高度翹曲超薄晶片(例如，40微米或更小)之電子組件時，習知程序典型包括該個別的電子組件從一薄膜框挑選之前，將該晶片或分開的電子組件安裝在該薄膜框上(亦即，切割或安裝膠帶)。使用一薄膜框會增加與製造包括矽穿孔及/或高度翹曲超薄晶片之電子組件相關聯的多餘成本。
依據本發明之一實施例，係特地提出一種方法，包含：將包括多個電子組件之一晶片附接至包括一黏著劑之一載體晶片；將該多個電子組件分離為個別的電子組件；以及將該多個電子組件從該載體晶片移除。
10:晶片
11:電子組件
13:載體晶片
14:黏著劑
100:方法
110、120、130、140、150、160、180、190:方塊
1200:電子裝置
1202:系統匯流排
1210:電子總成
1212:處理器
1214:通信電路
1216:顯示器裝置
1218:揚聲器
1220:外部記憶體
1222:主要記憶體
1224:硬碟
1226:可移除媒體
1230:鍵盤及/或控制器
T:托盤
R:捲盤
S:基體
圖1為一繪示製造一超薄晶片的一示範方法之一 初始部分的示意側視圖。
圖2為一類似圖1、繪示製造一超薄晶片的示範方法之另一部分的示意側視圖。
圖3為一類似圖2、繪示製造一超薄晶片的示範方法之還有另一部分的示意側視圖。
圖4為一類似圖3、繪示製造一超薄晶片的示範方法之尚有另一部分的示意側視圖。
圖5為一類似圖4、繪示製造一超薄晶片的示範方法之另一部分的示意側視圖。
圖6為一類似圖5、繪示製造一超薄晶片的示範方法之還有另一部分的示意側視圖。
圖7為一類似圖6、繪示圖5所示之示範方法的一替代部分之示意側視圖。
圖8為一類似圖5、繪示安裝於一基體之一示範分開的超薄晶片之示意側視圖。
圖9為一類似圖5、繪示製造一超薄晶片的示範方法之另一部分的示意側視圖。
圖10為一類似圖5、繪示製造一超薄晶片的示範方法之一替代部分的示意側視圖。
圖11為一繪示製造一超薄晶片的一示範方法之流程圖。
圖12為一使用本文所述之方法的一電子裝置之方塊圖。
較佳實施例之詳細說明
下列說明與圖式充分繪示特定實施例來使業界熟於此技者能夠將其實作。其他實施例可併入結構上、邏輯上、電氣上的程序與改變。某些實施例之部分與特徵可被包括、或替代其他實施例之部分與特徵。該等請求項提出之實施例包含該等請求項之所有可用的等效元件。
如本申請案中使用之定向術語，諸如“水平”係相關與習知平面或一晶片或基體之表面平行的一平面來加以定義，而不論該晶片或基體之定向。該術語“垂直”係參照與如上文定義之水平垂直的一方向。介詞，諸如“上”、“側”(如“側牆”中)、“較高”、“較低”、“上方”、與“下方”係相關習知平面或表面位於該晶片或基體之頂部表面上來加以定義，而不論該晶片或基體之定向。
本文所述之方法可允許從一臨時載體直接挑選電子組件之製造程序。從一臨時載體而非一薄膜框直接挑選電子組件的能力可簡化該程序並消除切割(或安裝)膠帶的需求。
此外，本文所述之方法能夠掌控超薄翹曲晶片(例如，大於40毫米)與高度翹曲晶片(例如，小於50微米)。本文所述之方法亦可消除一雙側挑選的需求(例如，具有筒夾之一無針頂出器銷或具有筒夾之針頂出器)並使電子組件之單側挑選能夠不使用切割膠帶。
本文所述之方法亦可藉由具有支援所有電子組件的準備步驟來降低薄晶片破裂的風險。因此，該等方法 可消除由於薄膜框下垂、延伸或剝落造成之電子組件邊緣碎屑的風險。此外，掌控超薄晶粒時，由於頂出器銷或無針頂出器致動造成的危害風險可被消除。
圖1-7以及9-10為繪示製造一超薄晶片的一示範方法(100)之各種不同部分與變動的示意圖。該方法(100)包括(110)將包括多個電子組件(11)之一晶片(10)附接至包括一黏著劑(14)之一載體晶片(13)(參見圖1與圖2)。
該方法(100)更包括(120)將該多個電子組件(11)分離為個別的電子組件(11)(參見圖3)。該方法更包括(130)將該多個電子組件(11)從該載體晶片(13)移除。圖5顯示該等電子組件(11)個別被移除。圖7顯示該等電子組件已被同時移除並集合移至一示範清潔站之一示範形式。
某些形式中，(120)將該多個電子組件(11)分離為個別的電子組件(11)包括將該晶片(10)切割及/或將該晶片(10)薄化。應注意將該多個電子組件(11)分離為個別的電子組件(11)、現在已知、或未來發現之任何程序可用來將該等電子組件(11)分離。
該方法更可包括將形成該晶片(10)之個別的電子組件(11)之任一個、某些、或全部進行塗佈、劃線或標記。該等電子組件可個別、或集合地接受其他程序。如範例中，某些該等程序包括、但不侷限於應力釋放及/或組件驗證。
如圖4所示，(130)將該多個電子組件(11)從該載體晶片(13)移除可包括將該載體晶片(13)暴露在紫外線輻射。該方法(100)之其他形式中，(120)將該多個電子組件(11) 從該載體晶片(13)移除可包括將該晶片(10)之溫度提升。
使用紫外線輻射來降低該多個電子組件(11)與該載體晶片(13)間之黏著性時，該紫外線輻射可交叉鏈接該黏著劑以便降低該黏著劑(14)之黏著功能。該晶片(10)之溫度提升至一有效準位(例如，針對熱塑或蠟黏著劑)時，供應至該黏著劑(14)之熱能可降低該黏著劑之黏性以便允許將該多個電子組件(11)從該載體晶片(13)分離。
該方法更包括(150)將該多個電子組件(11)清潔(參見圖6與7)。該使用之清潔程序可部分取決於黏著劑類型。該等清潔劑可包括用於熱塑或熱固鍵黏著劑之溶劑及/或具有適合環境黏著劑(例如，蠟)之一界面活性劑的熱水。
應注意該等電子組件可取決於該等電子組件(11)何時從該載體晶片(13)挑選來個別、或集合地清潔。此外，任何清潔可於一晶粒準位、晶片準位完成、或者清潔可於一分開的托盤中執行。
某些形式中，(110)將包括多個電子組件(11)之一晶片(10)附接至一載體晶片(13)可包括附接包括該晶片(10)兩側上之積體電路的一晶片(10)(該等圖形僅顯示該晶片(10)一側上之積體電路)。應注意該黏著劑14顯示為放置在圖中之載體晶片(13)上，應考量該晶片(10)附接至該載體晶片(13)前，該黏著劑(14)初始可放置在該晶片(10)與電子組件(11)上。
該方法(100)更可包括(160)將該多個電子組件(11)的至少其中之一翻轉；以及(180)將該多個電子組件(11) 的至少其中之一放入一托盤T(參見圖10)或膠帶和捲盤R(參見圖9)中。於替代形式中，該方法可包括(190)將該多個電子組件(11)的至少其中之一放置在一基體S上(參見圖8)。
應注意該多個電子組件可使用現在已知、或未來發現之任何設備來個別、或集合地翻轉。用來翻轉該多個電子組件(11)之設備類型可部分取決於該等電子組件(11)之類型、大小與外形、以及該多個電子組件(11)所使用之應用(等等因素)。
使用之托盤T或膠帶和捲盤R的類型亦部分取決於該等電子組件(11)之類型、大小與外形。此外，該方法(100)中使用之基體S的類型將取決於該等電子組件(11)所使用之應用。應注意該等電子組件(11)之每一個可放置在一或多個不同的基體S之類型。
圖12為一合併本文所述之方法(100)的至少其中之一的一電子裝置1200之方塊圖。電子裝置1200僅為可使用本文所述之方法(100)的形式之一電子裝置的一範例。一電子裝置1200之範例包括、但不侷限，於個人電腦、平板電腦、行動電話、遊戲裝置、MP3或其他數位媒體播放器、等等。
此範例中，電子裝置1200包含一資料處理系統，其包括一系統匯流排1202來耦合該電子裝置1200之各種不同組件。系統匯流排1202於該電子裝置1200之各種不同組件間提供通信鏈接、並可作為一單一匯流排、作為一匯流 排組合、或以任何其他適當的方式來予以執行。
如本文所述之一電子裝置1200可耦合至系統匯流排1202。該電子裝置1200可包括任何電路或電路組合。於一實施例中，該電子裝置1200包括可為任何類型之一處理器1212。如本文使用，“處理器”表示任何類型的計算電路，諸如但不侷限於一微處理器、一微控制器、一複雜指令集計算(CISC)微處理器、一精簡指令集計算(RISC)微處理器、一極長指令字元(VLIW)微處理器、一圖形處理器、一數位信號處理器(DSP)、多核心處理器、或任何其他類型的處理器或處理電路。
可包括在電子裝置1200之其他類型的電路為一定製電路、一特定應用積體電路(ASIC)、等等，諸如，例如，用於如行動電話、平板電腦、膝上型電腦、雙向無線電、以及類似電子系統之無線裝置的一或多個電路(諸如一通信電路1214)。該IC可執行任何其他類型的功能。
該電子裝置1200亦可包括一外部記憶體1220，其可依次包括適合該特定應用之一或多個記憶體元件，諸如隨機存取記憶體(RAM)型式之一主要記憶體1222、一或多個硬碟1224、及/或掌控可移除媒體1226，諸如光碟(CD)、快取記憶卡、數位光碟(DVD)、等等之一或多個驅動器。
該電子裝置1200亦可包括一顯示器裝置1216、一或多個揚聲器1218、以及一鍵盤及/或控制器1230，其可包括一滑鼠、軌跡球、觸控板、語音辨識裝置、或允許一系統使用者來將資訊輸入以及從該電子裝置1200接收資訊之 任何其他裝置。
為了更適當繪示本文所述之該等方法[100]，本文提供一非限制之範例清單：
範例1包括一種製造超薄晶片的方法。該方法包括將包括多個電子組件之一晶片附接至包括一黏著劑之一載體晶片；將該多個電子組件分離為個別的電子組件；以及將該多個電子組件從該載體晶片移除。
範例2包括範例1之方法，其中將該多個電子組件從該載體晶片移除包括將個別的電子組件從該載體晶片移除。
範例3包括範例1-2之任一個的方法，其中將該多個電子組件從該載體晶片移除包括同時將個別的電子組件從該載體晶片移除。
範例4包括範例1-3之任一個的方法，其中將該多個電子組件分離為個別的電子組件包括將該晶片薄化。
範例5包括範例1-4之任一個的方法，其中將該多個電子組件分離為個別的電子組件包括將該晶片切割。
範例6包括範例1-5之任一個的方法，且更包括將形成該晶片之個別的電子組件之任一個進行塗佈、劃線或標記的至少其中之一。
範例7包括範例1-6之任一個的方法，且更包括將形成該晶片之該多個電子組件進行塗佈、劃線或標記的至少其中之一。
範例8包括範例1-7之任一個的方法，其中將該多個電子組件從該載體晶片移除包括將該載體晶片暴露在紫外線 輻射。
範例9包括範例1-8之任一個的方法，其中將該多個電子組件從該載體晶片移除包括將該黏著劑之溫度提升。
範例10包括範例1-9之任一個的方法，且更包括將該多個電子組件清潔。
範例11包括範例1-10之任一個的方法，其中將包括多個電子組件之一晶片附接至一載體晶片包括附接包括該晶片兩側上之積體電路的一晶片。
範例12包括範例1-11之任一個的方法，其中將包括多個電子組件之一晶片附接至一載體晶片包括將該載體晶片附接至該晶片上之一黏著劑。
範例13包括範例1-12之任一個的方法，且更包括將該多個電子組件的至少其中之一翻轉；以及將該多個電子組件的至少其中之一放入一托盤或膠帶和捲盤中。
範例14包括範例1-13之任一個的方法，且更包括將該多個電子組件的至少其中之一翻轉；以及將該多個電子組件的至少其中之一放置在一基體上。
範例15包括一種製造超薄晶片的方法。該方法包括將包括多個電子組件之一晶片附接至包括一黏著劑之一載體晶片；將該多個晶粒分離為個別的電子組件，其中將該多個晶粒分離為個別的電子組件包括將該晶片薄化與切割；將形成該晶片之個別的電子組件之任一個執行塗佈、劃線或標記的至少其中之一；以及將該多個電子組件從該載體晶片移除，其中將該多個電子組件從該載體晶片移除包括進行將該載體暴露在紫外線輻射或將該晶片之溫度提升的 至少其中之一。
範例16包括範例15之方法，其中將包括多個電子組件之一晶片附接至一載體晶片包括將包括該晶片兩側上之積體電路的一晶片附接至該晶片上之黏著劑。
範例17包括範例15-16之任一個的方法，且更包括將該多個電子組件的至少其中之一翻轉；以及執行將該多個電子組件的至少其中之一放入一托盤或膠帶和捲盤中、或者將該多個電子組件的至少其中之一放置在一基體上的至少其中之一。
範例18包括一種製造超薄晶片的方法。該方法包括將包括多個晶粒之一晶片附接至包括一黏著劑之一載體晶片；將該多個晶粒分離為個別的晶粒；以及將形成該晶片之個別的晶粒之任一個執行塗佈、劃線或標記的至少其中之一；將該多個晶粒清潔；以及將該多個晶粒從該載體晶片移除。
範例19包括範例18之方法，其中將該多個電子組件從該載體晶片移除包括同時將個別的電子組件從該載體晶片移除。
範例20包括範例18-19之任一個的方法，且更包括將該多個電子組件的至少其中之一翻轉；以及執行下列至少一步驟：(i)將該多個晶粒的至少其中之一放入一托盤或膠帶和捲盤中；以及(ii)將該多個電子組件的至少其中之一放置在一基體上。
此概述意欲提供本標的之非限制範例。其不意欲提供一互斥或窮舉之說明。該詳細內容係包括來提供有關該等方法之進一步資訊。
上述詳細說明包括參照該等附圖，其形成該詳細說明的一部分。該等圖式藉由舉例解說來顯示本發明可加以實作之特定實施例。該等實施例於本文中亦參照為“範例”。該類範例可包括除了該等所示或說明以外之元件。然而，本發明者亦考量僅提供該等所示或說明之元件的範例。此外，本發明者亦考量使用該等所示或說明之元件的任何組合或排列(或其一或多個方面)之範例、關於一特定範例(或其一或多個方面)、或關於本文所示或說明之其它範例(或其一或多個方面)。
本文件中，使用如在專利文件中常見之該等術語“一”或“一個”，係包括一個或超過一個，而與“至少一個”或“一或多個”之任何其他實例或使用無關。本文件中，除非於其他地方指出，否則該術語“或”係用來參照為一非互斥或，使得“A或B”包括“A但非B”、“B但非A”、以及“A與B”。本文件中，該等術語“包括”與“在...中”用來作為該等分別術語“包含”與“其中”之純英文相同詞。此外，下列請求項中，該等術語“包括”與“包含”為開放式，亦即，包括除了於一請求項中之該類術語後所列外的元件之一系統、裝置、物品、組成、公式、或程序仍視為落在該請求項之範疇中。此外，下列請求項中，該等術語“第一”、“第二”、與“第三”、等等僅用來作為標記、而不意欲將數字需求加諸於其物件上。
上述說明意欲作為舉例解說、而非限制。例如，上述範例(或其一或多個方面)可彼此組合來使用。其他實施例亦可，諸如由業界熟於此技者根據檢視上述說明來使 用。
此摘要係提供來遵守37 C.F.R.§1.72(b)，以允許讀者快速確認該技術揭示內容之本質。應提出理解其不用來詮釋或限制該等請求項之範疇或意義。
此外，上述詳細說明中，各種不同特徵可聚集一起來簡化本揭示內容。此不應詮釋為意欲每一請求項皆必要一未請求的揭示特徵。而是，發明標的可比一特定的揭示實施例之所有特徵還少。因此，下列請求項因而併入該實施方式中，而每一請求項獨立作為一分開的實施例，且應考量該類實施例可在各種不同組合或排列中彼此組合。本發明之範疇應參照該等後附請求項、以及該類請求項授權之等效元件的完整範疇來決定。
100:方法
110、120、130、140、150、160、180、190:方塊

Claims (20)

  1. 一種製造電子組件的方法，包含：將包括複數個電子組件之一晶片附接至包括一黏著劑之一載體晶片，其中該等複數個電子組件係在該晶片之一側上，使得包括該等電子組件的該晶片之該一側直接接合該黏著劑；在該晶片被固定至該載體晶片之後，將該等複數個電子組件分離為個別的電子組件；以及將該等複數個電子組件從該載體晶片移除。
  2. 如請求項1之方法，其中將該等複數個電子組件從該載體晶片移除包括將個別的電子組件從該載體晶片移除。
  3. 如請求項1之方法，其中將該等複數個電子組件從該載體晶片移除包括將個別的電子組件從該載體晶片同時移除。
  4. 如請求項1之方法，其中將該等複數個電子組件分離為個別的電子組件包括薄化該晶片。
  5. 如請求項1之方法，其中將該等複數個電子組件分離為個別的電子組件包括切割該晶片。
  6. 如請求項1之方法，更包含將形成該晶片之該個別電子組件的任一者進行塗佈、劃線或標記的至少其中之一。
  7. 如請求項1之方法，更包含將形成該晶片之該等複數個電子組件進行塗佈、劃線或標記的至少其中之一。
  8. 如請求項1、2、3之方法，其中將該等複數個電子組件從該載體晶片移除包括使該載體晶片暴露於紫外線輻射。
  9. 如請求項1之方法，其中將該等複數個電子組件從該載體晶片移除包括提高該黏著劑之溫度。
  10. 如請求項1之方法，更包含清潔該等複數個電子組件。
  11. 如請求項1之方法，其中將包括複數個電子組件之一晶片附接至一載體晶片包括附接在晶片兩側包括積體電路的該晶片。
  12. 如請求項1之方法，其中將包括複數個電子組件之一晶片附接至一載體晶片包括將該載體晶片附接至該晶片上之一黏著劑。
  13. 如請求項1之方法，更包含：翻轉該等複數個電子組件的至少其中之一；以及將該等複數個電子組件的該至少其中之一放入一托盤或膠帶和捲盤中。
  14. 如請求項1之方法，更包含：翻轉將該等複數個電子組件的至少其中之一；以及將該等複數個電子組件的該至少其中之一放置在一基體上。
  15. 一種製造電子組件的方法，包含：將包括複數個電子組件之一晶片附接至包括一黏著劑之一載體晶片，其中該等複數個電子組件係在該晶片之一側上，使得包括該等電子組件的該晶片之該一側 直接接合該黏著劑；在該晶片被固定至該載體晶片之後，將該等複數個電子組件分離為個別的電子組件，其中將該等複數個電子組件分離為個別的電子組件包括薄化與切割該晶片；對形成該晶片之該等個別的電子組件之任一者執行塗佈、劃線或標記的至少其中之一；以及將該等複數個電子組件從該載體晶片移除，其中將該等複數個電子組件從該載體晶片移除包括使該載體暴露於紫外線輻射或提高該晶片之溫度的至少其中之一。
  16. 如請求項15之方法，其中將包括複數個電子組件之一晶片附接至一載體晶片包括將在晶片兩側包括積體電路的該晶片附接至該載體晶片上之黏著劑。
  17. 如請求項15之方法，更包含：翻轉該等複數個電子組件的至少其中之一；以及執行下列至少其中之一：將該等複數個電子組件的至少其中之一放入一托盤或膠帶和捲盤中、或者將該等複數個電子組件的至少其中之一放置在一基體上。
  18. 一種製造晶粒的方法，包含：將包括複數個晶粒之一晶片附接至包括一黏著劑之一載體晶片，其中該等晶粒係在該晶片之一側上，使得包括該等晶粒的該晶片之該一側直接接合該黏著劑； 在該晶片被固定至該載體晶片之後，將該等複數個晶粒分離為個別的晶粒；以及對形成該晶片之該等個別的晶粒之任一者執行塗佈、劃線或標記的至少其中之一；清潔該等複數個晶粒；以及將該等複數個晶粒從該載體晶片移除。
  19. 如請求項18之方法，其中將該等複數個晶粒從該載體晶片移除包括將個別的晶粒從該載體晶片同時移除。
  20. 如請求項18之方法，更包含：翻轉該等複數個晶粒的至少其中之一；以及執行下列至少一者：(i)將該等複數個晶粒的至少其中之一放入一托盤或膠帶和捲盤中；以及(ii)將該等複數個晶粒的至少其中之一放置在一基體上。
TW105123438A 2015-09-23 2016-07-25 製造電子組件或晶粒的方法 TWI722002B (zh)

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