TWI716483B - 用於處理及分析一工件的方法和系統 - Google Patents

用於處理及分析一工件的方法和系統 Download PDF

Info

Publication number
TWI716483B
TWI716483B TW105135782A TW105135782A TWI716483B TW I716483 B TWI716483 B TW I716483B TW 105135782 A TW105135782 A TW 105135782A TW 105135782 A TW105135782 A TW 105135782A TW I716483 B TWI716483 B TW I716483B
Authority
TW
Taiwan
Prior art keywords
precursor
protective layer
substrate
workpiece
deposition
Prior art date
Application number
TW105135782A
Other languages
English (en)
Chinese (zh)
Other versions
TW201734235A (zh
Inventor
布萊恩 羅伯茨 Ｊｒ 勞斯
湯瑪士Ｇ 米勒
查德 魯
諾艾爾 湯瑪士 法蘭科
Original Assignee
美商Fei公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商Fei公司 filed Critical 美商Fei公司
Publication of TW201734235A publication Critical patent/TW201734235A/zh
Application granted granted Critical
Publication of TWI716483B publication Critical patent/TWI716483B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/224—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a cluster, e.g. using a gas cluster ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
TW105135782A 2015-11-06 2016-11-03 用於處理及分析一工件的方法和系統 TWI716483B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562252308P 2015-11-06 2015-11-06
US62/252,308 2015-11-06
US15/087,968 US9978586B2 (en) 2015-11-06 2016-03-31 Method of material deposition
US15/087,968 2016-03-31

Publications (2)

Publication Number Publication Date
TW201734235A TW201734235A (zh) 2017-10-01
TWI716483B true TWI716483B (zh) 2021-01-21

Family

ID=58667953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105135782A TWI716483B (zh) 2015-11-06 2016-11-03 用於處理及分析一工件的方法和系統

Country Status (5)

Country Link
US (3) US9978586B2 (enExample)
JP (2) JP7046482B2 (enExample)
KR (1) KR102629567B1 (enExample)
CN (1) CN107058944B (enExample)
TW (1) TWI716483B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804565B2 (en) * 2017-07-31 2020-10-13 Robert Bosch Gmbh Batteries with polymer electrolyte composites based on tetrahedral arylborate nodes
JP6887343B2 (ja) * 2017-08-24 2021-06-16 株式会社日立製作所 加工方法、半導体装置および加工装置
ES2738911A1 (es) * 2018-07-25 2020-01-27 Consejo Superior Investigacion Procedimiento para depositar elementos sobre un sustrato de interes y dispositivo
DE102018222522A1 (de) * 2018-12-20 2020-06-25 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb einer Gaszuführungseinrichtung sowie Gaszuführungseinrichtung zur Durchführung des Verfahrens und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung
WO2021053704A1 (ja) * 2019-09-17 2021-03-25 株式会社日立ハイテク イオンビーム装置
US11233017B2 (en) * 2019-10-03 2022-01-25 Texas Instruments Incorporated Ex-situ manufacture of metal micro-wires and FIB placement in IC circuits
EP3922752B1 (en) * 2020-06-12 2025-09-03 Imec VZW A method for preparing a sample for transmission electron microscopy
US11749570B2 (en) * 2021-08-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Etch monitoring and performing
DE102021132833A1 (de) 2021-12-13 2023-06-15 Carl Zeiss Microscopy Gmbh Gaszuführungseinrichtung, System mit einer Gaszuführungseinrichtung sowie Teilchenstrahlgerät mit einer Gaszuführungseinrichtung oder dem System
DE102021132832A1 (de) * 2021-12-13 2023-06-15 Carl Zeiss Microscopy Gmbh Gaszuführungseinrichtung, Teilchenstrahlgerät mit einer Gaszuführungseinrichtung sowie Verfahren zum Betrieb der Gaszuführungseinrichtung und des Teilchenstrahlgeräts
DE102021132834B4 (de) 2021-12-13 2024-08-08 Carl Zeiss Microscopy Gmbh Gasreservoir, Gaszuführungseinrichtung mit einem Gasreservoir und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung
US20240071720A1 (en) * 2022-08-12 2024-02-29 Fei Company Method and system for preparing a specimen
CN115369386B (zh) * 2022-08-15 2023-07-25 北京科技大学 一种在微结构衬底上沉积金刚石的方法
TWI870972B (zh) 2022-09-26 2025-01-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 帶電粒子束裝置的擾動補償
CN116380582B (zh) * 2023-03-31 2024-09-20 胜科纳米(苏州)股份有限公司 一种超薄悬空膜透射电镜样品的制备方法
WO2025149160A1 (en) 2024-01-11 2025-07-17 Carl Zeiss Smt Gmbh Disturbance compensation for charged particle beam devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303257A (zh) * 2012-05-21 2015-01-21 Fei公司 用于tem观察的薄片的制备
CN104777024A (zh) * 2015-04-23 2015-07-15 上海华力微电子有限公司 一种透射电镜样品的制备方法及定位方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940000915B1 (ko) * 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
JP3872245B2 (ja) * 2000-01-14 2007-01-24 エスアイアイ・ナノテクノロジー株式会社 試料の断面構造観察方法
JP2001264220A (ja) * 2000-03-15 2001-09-26 Jeol Ltd 集束イオンビーム装置用標準試料
JP2004191358A (ja) * 2002-11-27 2004-07-08 Seiko Instruments Inc 複合荷電粒子ビームによる試料作製方法および装置
KR20050033699A (ko) * 2003-10-07 2005-04-13 삼성전자주식회사 투과전자현미경 분석용 시편의 제작 방법
DE10358036B4 (de) * 2003-12-11 2011-05-26 Qimonda Ag Verfahren zum Charakterisieren einer Tiefenstruktur in einem Substrat
US7320945B2 (en) * 2004-06-30 2008-01-22 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient low k material
JP4947965B2 (ja) * 2005-12-06 2012-06-06 ラピスセミコンダクタ株式会社 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造
US7511282B2 (en) * 2006-05-25 2009-03-31 Fei Company Sample preparation
US8357913B2 (en) * 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
JP5270558B2 (ja) * 2006-10-20 2013-08-21 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
JP5873227B2 (ja) * 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
US8226835B2 (en) * 2009-03-06 2012-07-24 Tel Epion Inc. Ultra-thin film formation using gas cluster ion beam processing
JP2010230518A (ja) 2009-03-27 2010-10-14 Toppan Printing Co Ltd 薄片試料作製方法
EP2233907A1 (en) * 2009-03-27 2010-09-29 FEI Company Forming an image while milling a work piece
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
US8859998B2 (en) * 2011-01-28 2014-10-14 Fei Company TEM sample preparation
US8853078B2 (en) * 2011-01-30 2014-10-07 Fei Company Method of depositing material
US8822921B2 (en) * 2011-06-03 2014-09-02 Fei Company Method for preparing samples for imaging
EP2749863A3 (en) * 2012-12-31 2016-05-04 Fei Company Method for preparing samples for imaging
US8912490B2 (en) * 2011-06-03 2014-12-16 Fei Company Method for preparing samples for imaging
US8859963B2 (en) * 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
JP5560246B2 (ja) 2011-08-29 2014-07-23 株式会社日立ハイテクノロジーズ 荷電粒子線装置に用いられる標準試料，及び荷電粒子線装置に用いられる標準試料の製造方法
JP6095678B2 (ja) * 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、ｐＨ保護又は滑性皮膜、被覆プロセス及び装置
JP6085150B2 (ja) * 2012-03-16 2017-02-22 株式会社日立ハイテクサイエンス 試料作製装置及び試料作製方法
US8912488B2 (en) * 2012-11-15 2014-12-16 Fei Company Automated sample orientation
CN105008891B (zh) 2013-01-11 2018-02-06 Fei公司 用于变更蚀刻速率的离子注入
JP6112929B2 (ja) * 2013-03-25 2017-04-12 株式会社日立ハイテクサイエンス 集束イオンビーム装置、それを用いた試料の加工方法、及び集束イオンビームを用いた試料の加工コンピュータプログラム
EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
CN103257066B (zh) * 2013-05-07 2015-05-20 上海华力微电子有限公司 Tem样品的制备方法
US9064811B2 (en) 2013-05-28 2015-06-23 Fei Company Precursor for planar deprocessing of semiconductor devices using a focused ion beam
EP2916342A1 (en) * 2014-03-05 2015-09-09 Fei Company Fabrication of a lamella for correlative atomic-resolution tomographic analyses
KR101568247B1 (ko) * 2014-06-02 2015-11-12 한국에너지기술연구원 질소 도핑된 탄소 표면을 갖는 금속-탄소 하이브리드 복합체 및 그 제조방법
CN104122130B (zh) * 2014-07-31 2019-08-20 上海华力微电子有限公司 一种透射电镜样品的制备方法
US9349573B2 (en) * 2014-08-01 2016-05-24 Omniprobe, Inc. Total release method for sample extraction in an energetic-beam instrument

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303257A (zh) * 2012-05-21 2015-01-21 Fei公司 用于tem观察的薄片的制备
CN104777024A (zh) * 2015-04-23 2015-07-15 上海华力微电子有限公司 一种透射电镜样品的制备方法及定位方法

Also Published As

Publication number Publication date
KR20170053577A (ko) 2017-05-16
US20180277361A1 (en) 2018-09-27
US20210118678A1 (en) 2021-04-22
TW201734235A (zh) 2017-10-01
US20170133220A1 (en) 2017-05-11
CN107058944B (zh) 2020-11-10
JP2022078085A (ja) 2022-05-24
JP2017125837A (ja) 2017-07-20
US11798804B2 (en) 2023-10-24
JP7046482B2 (ja) 2022-04-04
US11069523B2 (en) 2021-07-20
CN107058944A (zh) 2017-08-18
JP7342165B2 (ja) 2023-09-11
US9978586B2 (en) 2018-05-22
KR102629567B1 (ko) 2024-01-25

Similar Documents

Publication Publication Date Title
TWI716483B (zh) 用於處理及分析一工件的方法和系統
CN102809496B (zh) 制备用于tem成像的薄样本的方法
JP5925182B2 (ja) 撮像のための試料調製方法
US9111720B2 (en) Method for preparing samples for imaging
US8822921B2 (en) Method for preparing samples for imaging
JP5591550B2 (ja) 高選択性、低損傷の電子ビーム・デリニエーション・エッチング
TWI620226B (zh) 用於聚焦離子束加工之方法及系統
JP2014130145A5 (enExample)
JP2016008971A (ja) 対称なｆｉｂ堆積物を作り出す方法およびシステム
EP2481828A1 (en) Method of depositing material
EP3193351B1 (en) Beam-induced etching
JP6271583B2 (ja) 高アスペクト比構造体内への材料の付着
Schoenaker et al. Focused electron beam induced etching of titanium with XeF2
US10347463B2 (en) Enhanced charged particle beam processes for carbon removal