TWI715170B - 半導體結構與電路 - Google Patents
半導體結構與電路 Download PDFInfo
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- TWI715170B TWI715170B TW108130882A TW108130882A TWI715170B TW I715170 B TWI715170 B TW I715170B TW 108130882 A TW108130882 A TW 108130882A TW 108130882 A TW108130882 A TW 108130882A TW I715170 B TWI715170 B TW I715170B
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- polarized
- sidewall surface
- field effect
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US201862737447P | 2018-09-27 | 2018-09-27 | |
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US16/353,664 | 2019-03-14 | ||
US16/353,664 US11257818B2 (en) | 2018-09-27 | 2019-03-14 | Fin-based field effect transistors |
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TW201606986A (zh) * | 2012-09-28 | 2016-02-16 | 英特爾股份有限公司 | 高崩潰電壓之三氮族空乏模式金屬氧化物半導體電容器 |
TW201707062A (zh) * | 2011-12-19 | 2017-02-16 | 英特爾股份有限公司 | 第三族氮化物奈米線電晶體 |
US9595594B2 (en) * | 2012-06-18 | 2017-03-14 | Fujitsu Limited | Compound semiconductor device and method for manufacturing the same |
US20170200820A1 (en) * | 2016-01-07 | 2017-07-13 | Lawrence Livermore National Security, Llc | Three dimensional vertically structured electronic devices |
WO2018063191A1 (en) * | 2016-09-28 | 2018-04-05 | Intel Corporation | Techniques for forming schottky diodes on semipolar planes of group iii-n material structures |
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US9583574B2 (en) * | 2012-09-28 | 2017-02-28 | Intel Corporation | Epitaxial buffer layers for group III-N transistors on silicon substrates |
US8768271B1 (en) * | 2012-12-19 | 2014-07-01 | Intel Corporation | Group III-N transistors on nanoscale template structures |
JP6315852B2 (ja) | 2013-12-23 | 2018-04-25 | インテル・コーポレーション | 半導体トランジスタ構造、システムオンチップおよび半導体トランジスタ構造形成方法 |
US9337279B2 (en) * | 2014-03-03 | 2016-05-10 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
US9064976B1 (en) * | 2014-12-02 | 2015-06-23 | International Business Machines Corporation | Modeling charge distribution on FinFET sidewalls |
US9318622B1 (en) * | 2015-06-23 | 2016-04-19 | International Business Machines Corporation | Fin-type PIN diode array |
US10340383B2 (en) * | 2016-03-25 | 2019-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having stressor layer |
KR102457130B1 (ko) * | 2016-05-17 | 2022-10-24 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
WO2018125211A1 (en) * | 2016-12-30 | 2018-07-05 | Intel Corporation | Stacked group iii-nitride transistors for an rf switch and methods of fabrication |
US9978872B1 (en) | 2017-03-23 | 2018-05-22 | International Business Machines Corporation | Non-polar, III-nitride semiconductor fin field-effect transistor |
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TW201707062A (zh) * | 2011-12-19 | 2017-02-16 | 英特爾股份有限公司 | 第三族氮化物奈米線電晶體 |
US9595594B2 (en) * | 2012-06-18 | 2017-03-14 | Fujitsu Limited | Compound semiconductor device and method for manufacturing the same |
TW201606986A (zh) * | 2012-09-28 | 2016-02-16 | 英特爾股份有限公司 | 高崩潰電壓之三氮族空乏模式金屬氧化物半導體電容器 |
US20170200820A1 (en) * | 2016-01-07 | 2017-07-13 | Lawrence Livermore National Security, Llc | Three dimensional vertically structured electronic devices |
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