TWI712602B - 有機半導體組合物及包含其之有機薄膜、與其用途 - Google Patents

有機半導體組合物及包含其之有機薄膜、與其用途 Download PDF

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Publication number
TWI712602B
TWI712602B TW106106729A TW106106729A TWI712602B TW I712602 B TWI712602 B TW I712602B TW 106106729 A TW106106729 A TW 106106729A TW 106106729 A TW106106729 A TW 106106729A TW I712602 B TWI712602 B TW I712602B
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TW
Taiwan
Prior art keywords
thin film
organic thin
organic
alkyl group
compounds
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TW106106729A
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English (en)
Chinese (zh)
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TW201741317A (zh
Inventor
荒井俊人
長谷川達生
井上悟
Original Assignee
國立研究開發法人產業技術綜合研究所
日商日本化藥股份有限公司
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Publication of TW201741317A publication Critical patent/TW201741317A/zh
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D519/00—Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Thin Film Transistor (AREA)
TW106106729A 2016-02-29 2017-03-01 有機半導體組合物及包含其之有機薄膜、與其用途 TWI712602B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP??2016-037213 2016-02-29
JP2016037213 2016-02-29

Publications (2)

Publication Number Publication Date
TW201741317A TW201741317A (zh) 2017-12-01
TWI712602B true TWI712602B (zh) 2020-12-11

Family

ID=59742996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106106729A TWI712602B (zh) 2016-02-29 2017-03-01 有機半導體組合物及包含其之有機薄膜、與其用途

Country Status (7)

Country Link
US (1) US11198698B2 (ko)
EP (1) EP3425687B1 (ko)
JP (1) JP6800469B2 (ko)
KR (1) KR20180117175A (ko)
CN (1) CN108701768B (ko)
TW (1) TWI712602B (ko)
WO (1) WO2017150474A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6654517B2 (ja) * 2016-06-21 2020-02-26 山本化成株式会社 有機トランジスタ
JP7144210B2 (ja) * 2018-06-22 2022-09-29 山本化成株式会社 有機トランジスタ
US20210371428A1 (en) * 2018-08-29 2021-12-02 Panasonic Intellectual Property Management Co., Ltd. FUSED THIOPHENE MOLECULE AND p-TYPE SEMICONDUCTOR FILM AND ELECTRONIC DEVICE

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201002674A (en) * 2008-04-17 2010-01-16 Ricoh Co Ltd [1]benzothieno[3,2-b][1]benzothiophene compound and method for producing the same, and organic electronic device using the same
JP2012044109A (ja) * 2010-08-23 2012-03-01 Osaka Prefecture Univ 電界効果トランジスタ及びその製造方法
TW201247677A (en) * 2011-02-25 2012-12-01 Univ Hiroshima Novel heterocyclic compound and method for preparing intermediate thereof, and application thereof
CN103958520A (zh) * 2011-09-12 2014-07-30 破立纪元有限公司 具有半导体特性的化合物及相关组合物和装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615459A (en) 1979-07-10 1981-02-14 Uni Charm Corp Method and apparatus for producing nonwoven fabric
JPS5732595A (en) 1980-08-06 1982-02-22 Sanyo Electric Co Method and device for heating by microwave
CN101529609B (zh) * 2006-10-20 2010-10-20 日本化药株式会社 场效应晶体管
KR20140101788A (ko) * 2011-11-15 2014-08-20 바스프 에스이 유기 반도체 소자 및 이의 제조 방법
US9260451B2 (en) * 2012-08-24 2016-02-16 Nippon Kayaku Kabushiki Kaisha Method for producing aromatic compound
TWI535726B (zh) * 2012-09-10 2016-06-01 迪愛生股份有限公司 苯并噻吩苯并噻吩衍生物、有機半導體材料及有機電晶體
JP2016513357A (ja) * 2012-12-28 2016-05-12 メルク パテント ゲーエムベーハー ポリマー有機半導体化合物を含む組成物
KR102092098B1 (ko) * 2013-03-07 2020-03-23 디아이씨 가부시끼가이샤 유기 박막, 이것을 사용한 유기 반도체 디바이스 및 유기 트랜지스터
JP2014175392A (ja) * 2013-03-07 2014-09-22 Tokyo Institute Of Technology 有機薄膜の製造方法、及び有機半導体デバイス
JP6214938B2 (ja) * 2013-06-18 2017-10-18 日本化薬株式会社 有機半導体及びその用途、並びに半導体層形成用インク
WO2015137304A1 (ja) 2014-03-12 2015-09-17 Dic株式会社 化合物、並びにそれを含有する有機半導体材料、有機半導体インク及び有機トランジスタ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201002674A (en) * 2008-04-17 2010-01-16 Ricoh Co Ltd [1]benzothieno[3,2-b][1]benzothiophene compound and method for producing the same, and organic electronic device using the same
JP2012044109A (ja) * 2010-08-23 2012-03-01 Osaka Prefecture Univ 電界効果トランジスタ及びその製造方法
TW201247677A (en) * 2011-02-25 2012-12-01 Univ Hiroshima Novel heterocyclic compound and method for preparing intermediate thereof, and application thereof
CN103958520A (zh) * 2011-09-12 2014-07-30 破立纪元有限公司 具有半导体特性的化合物及相关组合物和装置

Also Published As

Publication number Publication date
EP3425687A4 (en) 2019-07-31
CN108701768B (zh) 2022-07-05
US20190048021A1 (en) 2019-02-14
WO2017150474A1 (ja) 2017-09-08
EP3425687A1 (en) 2019-01-09
TW201741317A (zh) 2017-12-01
CN108701768A (zh) 2018-10-23
KR20180117175A (ko) 2018-10-26
JP6800469B2 (ja) 2020-12-16
US11198698B2 (en) 2021-12-14
JPWO2017150474A1 (ja) 2018-12-20
EP3425687B1 (en) 2021-09-29

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