TWI711508B - Wafer sticking apparatus for single side polishing apparatus and wafer sticking method for single side polishing apparatus - Google Patents
Wafer sticking apparatus for single side polishing apparatus and wafer sticking method for single side polishing apparatus Download PDFInfo
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- TWI711508B TWI711508B TW107130773A TW107130773A TWI711508B TW I711508 B TWI711508 B TW I711508B TW 107130773 A TW107130773 A TW 107130773A TW 107130773 A TW107130773 A TW 107130773A TW I711508 B TWI711508 B TW I711508B
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- 238000005498 polishing Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 77
- 230000002093 peripheral effect Effects 0.000 abstract description 6
- 210000000707 wrist Anatomy 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 4
- 208000032544 Cicatrix Diseases 0.000 description 3
- 231100000241 scar Toxicity 0.000 description 3
- 230000037387 scars Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係關於用於單面研磨裝置的晶圓貼附裝置、及用於單面研磨裝置的晶圓貼附方法。The present invention relates to a wafer attaching device for a single-sided polishing device and a wafer attaching method for a single-sided polishing device.
以往,作為用於單面研磨裝置的晶圓貼附方法,已知有使用吸附膠帶者、利用真空吸附者(例如,參照專利文獻1、專利文獻2)。 在專利文獻1中揭露一種技術,其包括藉由水的表面張力而保持晶圓之研磨頭,並於研磨頭形成孔部,利用真空吸引將晶圓貼附在研磨頭的保持面。 並且,在專利文獻2中揭露一種技術,其將雙面黏著片貼附在研磨頭的底面,藉由水的表面張力及吸附片的黏著性,而使基板附著在吸附片並保持。 [先前技術文獻] [專利文獻]Conventionally, as a wafer attaching method used in a single-sided polishing apparatus, those using suction tape and those using vacuum suction are known (for example, refer to
[專利文獻1]日本特開2007-103707號公報 [專利文獻2]日本特開2008-80443號公報[Patent Document 1] Japanese Patent Application Publication No. 2007-103707 [Patent Document 2] Japanese Patent Application Publication No. 2008-80443
[發明概要] [發明所欲解決的課題][Summary of Invention] [Problems to be Solved by Invention]
然而,於前述專利文獻1所記載之技術中,必須在研磨頭開孔,有包含重金屬的流體由此孔逆流而污染晶圓的問題。並且,亦有異物進出的可能性。 並且,於前述專利文獻2所記載之技術中,必須使用治具等將晶圓按壓於研磨頭的底面,在按壓之際,有晶圓表面殘留接觸痕跡、因襯墊上的異物等而損傷晶圓表面的狀況。 此情形,雖亦能考慮藉由之後的研磨處理去除接觸痕跡、傷痕,但在研磨取代少的情形,有所謂無法去除接觸痕跡、傷痕的課題。However, in the technique described in the
本發明之目的在於提供一種不會對晶圓表面造成接觸痕跡或傷痕且表面品質不會惡化之用於單面研磨裝置的晶圓貼附裝置、及用於單面研磨裝置的晶圓貼附方法。 [用於解決課題的手段]The object of the present invention is to provide a wafer attaching device for a single-sided polishing device and a wafer attaching device for a single-sided polishing device that does not cause contact marks or scars on the surface of the wafer and does not deteriorate the surface quality method. [Means used to solve the problem]
本發明之用於單面研磨裝置的晶圓貼附裝置係藉由水的表面張力而將晶圓貼附在單面研磨裝置之用於單面研磨裝置的晶圓貼附裝置,其特徵在於包括:暫托台,其與前述晶圓的外周緣抵接,並支撐前述晶圓;以及,水吐出槽,其被安裝在前述暫托台上,並將水吐出至前述晶圓。The wafer attaching device for a single-sided polishing device of the present invention attaches a wafer to a single-sided polishing device by the surface tension of water, and the wafer attaching device for a single-sided polishing device is characterized in that It includes: a temporary pallet that abuts on the outer periphery of the wafer and supports the wafer; and a water ejection groove that is installed on the temporary pallet and discharges water to the wafer.
根據此發明,可藉由使暫托台在支撐晶圓的狀態下接近單面研磨裝置的晶圓的貼附面,並從水吐出槽吐出水,而將晶圓貼附在貼附面。在將晶圓貼附在貼附面之際,可利用水壓進行貼附,因此在晶圓上不會產生貼附時的接觸痕跡、貼附時的傷痕,晶圓的表面品質不會惡化。According to this invention, the wafer can be attached to the attaching surface by bringing the temporary pallet close to the attaching surface of the wafer of the single-sided polishing device while supporting the wafer, and spitting water from the water ejection tank. When attaching the wafer to the attaching surface, water pressure can be used for attaching. Therefore, there will be no contact marks or scratches during attaching on the wafer, and the surface quality of the wafer will not deteriorate. .
於本發明中,前述水吐出槽較佳為包括:凹部,其位於前述暫托台所支撐的晶圓的中央下方;以及,吐出部,其形成於前述凹部的底部,將水吐出至前述晶圓的中央。 根據此發明,因成為吐出部將水吐出至凹部的中央且以凹部整體的水壓按住晶圓的形態,故可使將晶圓按壓在單面研磨裝置的貼附面的力,在晶圓的中央部以面作用。於單面研磨裝置的貼附面,因可將供給至貼附面與晶圓之間的水,從作用水壓小的晶圓的外周排出,故可確實地將晶圓貼附在單面研磨裝置的貼附面。In the present invention, the water ejection tank preferably includes: a recessed portion located below the center of the wafer supported by the temporary pallet; and a ejecting portion formed at the bottom of the recessed portion to eject water to the wafer The center. According to this invention, since the ejection portion ejects water to the center of the recess and presses the wafer with the water pressure of the entire recess, the force of pressing the wafer against the attachment surface of the single-side polishing device can be achieved in the wafer The center of the circle acts as a surface. On the attaching surface of the single-sided polishing device, the water supplied between the attaching surface and the wafer can be discharged from the outer periphery of the wafer with low applied water pressure, so that the wafer can be reliably attached to the single side The attachment surface of the grinding device.
於本發明中,較佳為包括:第一升降裝置,其使前述暫托台接近、遠離前述單面研磨裝置的貼附面;以及,第二升降裝置,其使前述水吐出槽接近、遠離前述暫托台所支撐之晶圓。 根據此發明,可利用第一升降裝置使暫托台接近單面研磨裝置的貼附面,且在貼附面與晶圓之間具有並維持既定的間隙。然後,可利用第二升降裝置,使凹部吐出水且同時使水吐出槽在所期望的狀態下接近晶圓,藉此將晶圓貼附在單面研磨裝置的貼附面。In the present invention, it is preferable to include: a first lifting device that allows the temporary pallet to approach and distance from the attachment surface of the single-sided grinding device; and a second lifting device that causes the water ejection tank to approach and distance The wafer supported by the aforementioned temporary pallet. According to this invention, the temporary pallet can be brought close to the attaching surface of the single-sided polishing device by the first lifting device, and a predetermined gap can be provided and maintained between the attaching surface and the wafer. Then, the second lifting device can be used to discharge water from the recess and at the same time to make the water discharge groove approach the wafer in a desired state, thereby sticking the wafer to the sticking surface of the single-sided polishing device.
本發明的單面研磨裝置的晶圓貼附方法係藉由水的表面張力而將晶圓貼附在單面研磨裝置之用於單面研磨裝置的晶圓貼附方法,其特徵在於實施以下步驟:使暫托台支撐前述晶圓的外周緣之步驟;在前述單面研磨裝置的貼附面,使前述暫托台與前述晶圓具有既定的間隙並接近之步驟;以及,從前述晶圓的中央下方吐出水且同時將前述晶圓按壓在前述單面研磨裝置的貼附面之步驟。 藉由此發明,亦可享受與前述作用及效果同樣的作用及效果。The wafer attaching method of the single-side polishing device of the present invention is to attach the wafer to the single-side polishing device by the surface tension of water. The wafer attaching method for the single-side polishing device is characterized by implementing the following Step: the step of making the temporary pallet support the outer periphery of the wafer; the step of making the temporary pallet and the wafer close to and having a predetermined gap on the attachment surface of the single-sided polishing device; and, from the aforementioned crystal The step of spitting out water from the lower center of the circle and simultaneously pressing the wafer against the attachment surface of the single-sided polishing device. With this invention, it is also possible to enjoy the same action and effect as the aforementioned action and effect.
[用於實施發明的形態][Form for implementing the invention]
圖1中揭示本發明的實施形態之單面研磨裝置1及晶圓貼附裝置2。 [1]單面研磨裝置1的構造 單面研磨裝置1包括:頂旋轉軸11、研磨頭12、背襯墊(back pad)13、保持器14、及未圖示的定盤。 頂旋轉軸11雖省略圖示,但其係由軸狀構件構成,與馬達等旋轉驅動源的旋轉軸連接,使研磨頭12旋轉。 研磨頭12被安裝在頂旋轉軸11的下端,係由將頂旋轉軸11的旋轉中心作為中心之圓形的厚壁板狀體構成。此研磨頭12藉由水的表面張力而保持晶圓W。Fig. 1 shows a single-
背襯墊13被安裝在研磨頭12的底面,且係與研磨頭12相同直徑的圓形板狀體。此背襯墊13由多孔質樹脂材構成,成為可包含水之形態。 保持器14由安裝在背襯墊13的底面之環狀構件所形成,且以晶圓W不會脫離背襯墊13與研磨墊的間隙之方式進行保持。並且,保持器14的環內周直徑被形成為稍微大於晶圓W的外周直徑,亦可防止將晶圓W按壓在研磨墊進行研磨之際,發生以保持器14的部分按壓研磨墊而晶圓W陷入所導致之研磨時的晶圓W的邊緣崩塌。 定盤被可旋轉地支撐,在與研磨頭12的旋轉方向相同方向或相反方向進行旋轉。在定盤上,貼附研磨墊並以既定的力按壓晶圓W的底面,藉此能進行晶圓W的研磨。The
[2]晶圓貼附裝置2的構造 晶圓貼附裝置2係將晶圓W貼附在單面研磨裝置1的研磨頭12的底面之裝置,如圖1及圖2所示,其包括安裝在基台2A上的暫托台21、水吐出槽22、第一升降裝置23、及第二升降裝置24。 暫托台21包括板狀部21A、與從板狀部21A的外周緣站立之站立部21B。[2] The structure of the
板狀部21A由既定厚度的圓形板狀體構成。在圓形板狀體的直徑方向中間,鼓風211被安裝在圓形板狀體的中心周邊的多處(於本實施形態為4處)。鼓風211具有在貼附晶圓W前將貼附面的多餘水分噴吹去除的功能。The plate-
板狀部21A的外周,安裝有多根站立部21B(於本實施形態中,在晶圓W的圓周上均等地安裝有四根)。藉由多個螺栓212,將站立部21B固定在板狀部21A的外周端面。此外,雖省略圖示,但在站立部21B的內周面的中間部分,站立部21B的環周邊多處安裝有花灑噴頭,從花灑噴頭將水吐出至研磨頭12的背襯墊13,藉此對背襯墊13進行保水。A plurality of standing
並且,在站立部21B的上端安裝有暫托部213。 暫托部213的上表面被設為朝向內側且下方傾斜的梯形面。在接受晶圓W之際,暫托部213的梯形面與晶圓W的外周緣的R倒角部抵接,支撐晶圓W的外周緣。In addition, a
水吐出槽22係將水吐出至晶圓W的圓柱狀構件,包括凹部22A及吐出部22B。此外,水吐出槽22的外周直徑只要小於晶圓W的外形即可。 凹部22A被形成為直徑小於水吐出槽22的外周之圓形狀,凹部22A的中心被設為與水吐出槽22的圓形中心相同,具有漏斗狀或球面狀的傾斜面,在暫托台21支撐晶圓W之際,位於晶圓W的中央下方。 吐出部22B包括形成於凹部22A的底部之多處的孔221,由此等孔221將水吐出至晶圓W與凹部22A的空間。孔221與形成於水吐出槽22內部的十字狀的配管222連通(參照圖2),從水吐出槽22的外周所連接的水供給管223,將水供給至配管222。The
第一升降裝置23係使暫托台21上下升降的裝置,包括升降裝置本體23A及蓋部23B。 升降裝置本體23A係使暫托台21上下升降的本體部分,包括軸承部231及軸部232。 軸承部231由滾珠花鍵(ball spline)軸承構成,且被固定在基台2A上。 軸部232由外周面形成有花鍵溝的軸狀構件構成,且被插入軸承部231內。軸部232的上端被安裝在暫托台21的底面中心。軸部232的下端與被安裝在第一升降裝置23下方的空氣汽缸2B連接。 若空氣汽缸2B伸縮,則軸部232上下升降,伴隨於此,暫托台21亦上下升降。The
蓋部23B由包圍升降裝置本體23A的筒狀體構成,升降裝置本體23A防止在貼附晶圓W時被所使用的水淋濕。蓋部23B包括固定筒部233及運作筒部234。 固定筒部233由圓形狀的筒狀體構成,被以包圍軸承部231之方式安裝,且下端被固定在基台2A。 運作筒部234由直徑小於固定筒部233的圓筒狀體構成,下部被收納在固定筒部233的內部。運作筒部234伴隨著軸部232的上下動作而上下升降,防止軸部232露出至外部。The
第二升降裝置24係使水吐出槽22上下升降的裝置,包括升降裝置本體24A及蓋部24B。 升降裝置本體24A係使水吐出槽22升降的本體部分,包括汽缸本體241及升降部242。 汽缸本體241被安裝在暫托台21的板狀部21A的中央,並藉由螺栓等而被固定在板狀部21A。 升降部242的上端被安裝在水吐出槽22的底面。升降部242從未圖示的空氣供給源將空氣供給至汽缸本體241,升降部242的上部在上下方向進行伸縮,伴隨著升降部242的伸縮,水吐出槽22上下升降。The
蓋部24B由包圍升降裝置本體24A的筒狀體構成,升降裝置本體24A防止在貼附晶圓W時被所使用的水淋濕。蓋部24B包括固定筒部243及運作筒部244。 固定筒部243由包圍升降裝置本體24A的圓筒狀體構成,下端被固定在暫托台21的板狀部21A。 運作筒部244由直徑小於固定筒部243的圓筒狀體構成,下部被收納至固定筒部243的內部。運作筒部244伴隨著升降部242的伸縮而上下升降,防止汽缸本體241露出至外部。The
[3]晶圓W的定位裝置3的構造 圖3及圖4中揭示晶圓W的定位裝置3。定位裝置3係使晶圓W在水平方向移動並定位晶圓W的水平方向位置之裝置。定位裝置3包括:驅動部3A、一對的支撐部3B、及一對的腕部3C。並且,定位裝置3成為可藉由未圖示之空氣汽缸進行升降的形態。 驅動部3A由空氣汽缸等致動器構成,藉由使致動器伸縮,安裝在兩端的把持部31在水平方向進行伸縮。 在各個把持部31安裝有支撐部3B。 支撐部3B由延伸至上下的角形柱狀構件構成。在各個支撐部3B的下端安裝有腕部3C。[3] Structure of the
腕部3C被安裝在支撐部3B的下端,如圖4所示,由俯視圖為圓弧狀的板狀體構成,且把持晶圓W的端面。腕部3C包括固定腕部33及運作腕部34。 固定腕部33係被安裝在支撐部3B下端之1/4圓弧狀的板狀體。在固定腕部33的前端安裝有安裝構件35。 運作腕部34由被固定在腕部33下部之1/4圓弧狀的板狀體構成。相對於固定腕部33,運作腕部34藉由安裝構件35安裝在圓弧的中心,能朝向運作腕部34的圓弧中心移動。 在運作腕部34的圓弧內周面安裝有矽等可撓性的緩衝墊36。緩衝墊36與晶圓W的側面抵接,並藉由互相相對的四個緩衝墊36把持晶圓W。The
[4]實施形態的作用及效果 接下來,針對前述晶圓貼附裝置2的作用,基於圖5所示的流程圖進行說明。 首先,以研磨頭12的旋轉中心成為晶圓貼附裝置2的暫托台21的中心上方之方式,移動單面研磨裝置1的研磨頭12(步驟S1)。 雖省略圖示,但使用機械手(robot hand),將晶圓W安裝在暫托台21上(步驟S2)。 藉由晶圓W的定位裝置3,使相對的運作腕部34互相接近,在暫托台21的中心上將晶圓W對準中心(centering)(步驟S3)。 接下來,藉由第一升降裝置23的升降裝置本體23A,使暫托台21上升,使晶圓W接近研磨頭12的安裝有背襯墊13的底面(步驟S4)。[4] Operation and effect of the embodiment Next, the operation of the aforementioned
使暫托台21上升後,從水吐出槽22的吐出部22B的4處的孔221吐出水(步驟S5)。再者,如圖6所示,藉由第二升降裝置24的升降裝置本體23A,使水吐出槽22上升(步驟S6)。After raising the
如圖7所示,晶圓W藉由水的吐出壓(凹部22A的內壓),從底面中央被按壓在研磨頭12的背襯墊13的面,被貼附在研磨頭12的底面(步驟S7) 於此,暫托台21上升時,晶圓W與水吐出槽22的距離D1被設為100μm~150μm,但因從水吐出槽22吐出的水所導致的按壓力會變大,故較佳為盡可能地接近。 本實施形態中,取得此種距離D1係為了藉由晶圓W的厚度偏差、背襯墊13的厚度偏差、晶圓W對於背襯墊13的陷入量、第一升降裝置23的升降量精度、水吐出槽22的上表面的面精度偏差等,而防止晶圓W干擾研磨頭12。As shown in FIG. 7, the wafer W is pressed against the surface of the
於此,將晶圓W按壓在研磨頭12的底面之水的吐出壓目標值可如以下般進行計算。 在將傳遞至晶圓W的力的目標值設為F(N)之情形,若將水吐出槽22的凹部22A的內徑設為r(m),則吐出壓P(Pa)能藉由以下的式(1)求得。 P=F/π(r/2)2
‧‧‧(1) 若目標值F=9.8N、內徑r=0.08m,則吐出壓P成為P=9.8/π/0.042
≒1.95kPa。Here, the target value of the discharge pressure of the water pressing the wafer W against the bottom surface of the polishing
另一方面,若將晶圓W的直徑設為R(cm)、厚度設為t(cm)、矽的密度設為ρ(g/cm3 ),則能藉由下述式(2)而求得晶圓W的質量M(g)。 M=π×(R/2)2 ×t×ρ‧‧‧(2) 直徑300mm、厚度780μm的晶圓W的情形,因矽的密度為2.3(g/cm3 ),故晶圓W的重量成為M=π×152 ×0.078×2.3=126.8(g)。On the other hand, if the diameter of the wafer W is set to R (cm), the thickness is set to t (cm), and the density of silicon is set to ρ (g/cm 3 ), it can be obtained by the following formula (2) The mass M(g) of the wafer W is obtained. M=π×(R/2) 2 ×t×ρ‧‧‧(2) In the case of a wafer W with a diameter of 300mm and a thickness of 780μm, since the density of silicon is 2.3 (g/cm 3 ), the size of the wafer W The weight becomes M=π×15 2 ×0.078×2.3=126.8 (g).
使126.8g的晶圓W藉由凹部22A的內徑為r=0.08m的水吐出槽22而上升的吐出壓P1,由式(1),成為P1=0.1268/9.8/π/0.042
≒0.25kPa。 同樣地,使126.8g的晶圓W藉由凹部22A的內徑為r=0.2m的水吐出槽22而上升的吐出壓P2,由式(1),成為P2=0.1268/9.8/π/0.12
≒0.041kPa。此計算值係為了貼附晶圓W的最低限度必要的吐出壓,實際上為了使晶圓W上升,需要此值以上的力。The discharge pressure P1 of the 126.8 g wafer W raised by the
根據此種本實施形態,有以下般的效果。 使暫托台21在支撐晶圓W的狀態下接近單面研磨裝置1的晶圓W的貼附面,從水吐出槽22吐出水,藉此可將晶圓W貼附在貼附面。在將晶圓W貼附在貼附面之際,可利用水壓進行貼附,因此晶圓W上不會產生貼附時的接觸痕跡、貼附時的傷痕,晶圓W的表面品質不會惡化。According to this embodiment like this, there are the following effects. The
因成為吐出部22B將水吐出至凹部22A的中央,以凹部22A整體按壓晶圓W的形態,故可使將晶圓W按壓在單面研磨裝置1的貼附面的力,在晶圓W的中央部,以面作用。於單面研磨裝置1的貼附面,可將供給至貼附面與晶圓W之間的水,從作用水壓小的晶圓W的外周排出,因此可確實地將晶圓W貼附在單面研磨裝置1的貼附面。Since the
可利用第一升降裝置23,使暫托台21接近單面研磨裝置1的貼附面,且在貼附面與晶圓W之間具有既定的間隙並維持。而且,可利用第二升降裝置24,一邊吐出水一邊使水吐出槽22在所期望的狀態下接近晶圓W,藉此可將晶圓W貼附在單面研磨裝置1的貼附面。The
1‧‧‧單面研磨裝置2‧‧‧晶圓貼附裝置2A‧‧‧基台2B‧‧‧空氣汽缸3‧‧‧定位裝置3A‧‧‧驅動部3B‧‧‧支撐部3C‧‧‧腕部11‧‧‧頂旋轉軸12‧‧‧研磨頭13‧‧‧背襯墊14‧‧‧保持器21‧‧‧暫托台21A‧‧‧板狀部21B‧‧‧站立部22‧‧‧水吐出槽22A‧‧‧凹部22B‧‧‧吐出部23‧‧‧第一升降裝置23A‧‧‧升降裝置本體23B‧‧‧蓋部24‧‧‧第二升降裝置24A‧‧‧升降裝置本體24B‧‧‧蓋部31‧‧‧把持部33‧‧‧固定腕部34‧‧‧運作腕部35‧‧‧安裝構件36‧‧‧緩衝墊211‧‧‧鼓風212‧‧‧螺栓213‧‧‧暫托部221‧‧‧孔222‧‧‧配管223‧‧‧水供給管231‧‧‧軸承部232‧‧‧軸部233‧‧‧固定筒部234‧‧‧運作筒部241‧‧‧汽缸本體242‧‧‧升降部243‧‧‧固定筒部244‧‧‧運作筒部D1‧‧‧距離W‧‧‧晶圓1‧‧‧Single-side polishing device 2‧‧‧Wafer attaching device 2A‧‧‧Base 2B‧‧‧Air cylinder 3‧‧‧Positioning device 3A‧‧‧Drive part 3B‧‧‧Support part 3C‧‧ ‧Wrist 11‧‧‧Top rotating shaft 12‧‧‧Grinding head 13‧‧‧Back pad 14‧‧‧Retainer 21‧‧‧Temporary pallet 21A‧‧‧Plate part 21B‧‧‧Standing part 22 ‧‧‧Water discharge tank 22A‧‧‧Concave part 22B‧‧‧Discharge part 23‧‧‧First lifting device 23A‧‧‧ Lifting device body 23B‧‧‧Cover part 24‧‧‧Second lifting device 24A‧‧‧ Lifting device body 24B‧‧‧Cover part 31‧‧‧Grip part 33‧‧‧Fixed wrist part 34‧‧‧Operating wrist part 35‧‧‧Mounting member 36‧‧‧Cushion pad 211‧‧‧Blow 212‧‧ ‧Bolt 213‧‧‧Temporary support part 221‧‧‧Hole 222‧‧‧Piping 223‧‧‧Water supply pipe 231‧‧‧Bearing part 232‧‧‧Shaft part 233‧‧‧Fixed cylinder part 234‧‧ Operation Cylinder 241‧‧‧Cylinder body 242‧‧‧Lifting part 243‧‧‧Fixed cylinder 244‧‧‧Operating cylinder D1‧‧‧Distance W‧‧‧wafer
圖1係揭示本發明的實施形態之用於單面研磨裝置的晶圓貼附裝置的構造之剖面圖; 圖2係揭示前述實施形態中之晶圓貼附裝置的構造之平面圖; 圖3係揭示前述實施形態中之晶圓的定位裝置的構造之側面圖; 圖4係揭示前述實施形態中之晶圓的定位裝置的構造之平面圖; 圖5係揭示前述實施形態中之用於研磨裝置的晶圓貼附方法之流程圖; 圖6係用於說明前述實施形態中之作用之剖面圖; 圖7係用於說明前述實施形態中之作用之剖面圖。Fig. 1 is a cross-sectional view showing the structure of a wafer attaching device for a single-side polishing device according to an embodiment of the present invention; Fig. 2 is a plan view showing the structure of the wafer attaching device in the foregoing embodiment; Fig. 3 is A side view showing the structure of the wafer positioning device in the foregoing embodiment; FIG. 4 is a plan view showing the structure of the wafer positioning device in the foregoing embodiment; FIG. 5 is a plan view showing the structure of the polishing device in the foregoing embodiment The flowchart of the wafer attaching method; FIG. 6 is a cross-sectional view for explaining the effect in the foregoing embodiment; FIG. 7 is a cross-sectional view for explaining the effect in the foregoing embodiment.
1‧‧‧單面研磨裝置 1‧‧‧Single-side grinding device
2‧‧‧晶圓貼附裝置 2‧‧‧Wafer attaching device
2A‧‧‧基台 2A‧‧‧Abutment
2B‧‧‧空氣汽缸 2B‧‧‧Air cylinder
11‧‧‧頂旋轉軸 11‧‧‧Top rotation axis
12‧‧‧研磨頭 12‧‧‧Grinding head
13‧‧‧背襯墊 13‧‧‧Back pad
14‧‧‧保持器 14‧‧‧Retainer
21‧‧‧暫托台 21‧‧‧Respite Table
21A‧‧‧板狀部 21A‧‧‧Plate
21B‧‧‧站立部 21B‧‧‧Standing Department
22‧‧‧水吐出槽 22‧‧‧Water spitting tank
22A‧‧‧凹部 22A‧‧‧Recess
22B‧‧‧吐出部 22B‧‧‧Discharge part
23‧‧‧第一升降裝置 23‧‧‧The first lifting device
23A‧‧‧升降裝置本體 23A‧‧‧Lifting device body
23B‧‧‧蓋部 23B‧‧‧Cover
24‧‧‧第二升降裝置 24‧‧‧Second Lifting Device
24A‧‧‧升降裝置本體 24A‧‧‧Lifting device body
24B‧‧‧蓋部 24B‧‧‧Cover
211‧‧‧鼓風 211‧‧‧Blow
212‧‧‧螺栓 212‧‧‧Bolt
213‧‧‧暫托部 213‧‧‧Respite Department
221‧‧‧孔 221‧‧‧hole
222‧‧‧配管 222‧‧‧Piping
223‧‧‧水供給管 223‧‧‧Water supply pipe
231‧‧‧軸承部 231‧‧‧Bearing Department
232‧‧‧軸部 232‧‧‧Shaft
233‧‧‧固定筒部 233‧‧‧Fixed cylinder
234‧‧‧運作筒部 234‧‧‧operation tube
241‧‧‧汽缸本體 241‧‧‧Cylinder body
242‧‧‧升降部 242‧‧‧Elevator
243‧‧‧固定筒部 243‧‧‧Fixed cylinder
244‧‧‧運作筒部 244‧‧‧operation tube
W‧‧‧晶圓 W‧‧‧wafer
Claims (4)
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JP2017-200286 | 2017-10-16 |
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JPH09115989A (en) * | 1995-10-23 | 1997-05-02 | Rap Master S F T Kk | Method for aligning semiconductor wafer and water filling method |
TW516990B (en) * | 1999-08-20 | 2003-01-11 | Ebara Corp | Polishing apparatus |
JP2005019439A (en) * | 2003-06-23 | 2005-01-20 | Tokyo Seimitsu Co Ltd | Method and device for receiving and delivering wafer and wafer processing device using them |
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JPH10337656A (en) * | 1997-06-05 | 1998-12-22 | Mitsubishi Materials Corp | Wafer polishing device, and washing method of insert for wafer holding |
JP2003109926A (en) * | 2001-09-26 | 2003-04-11 | Applied Materials Inc | Substrate delivery method and mechanical chemical polishing device |
JP2007103707A (en) | 2005-10-05 | 2007-04-19 | Sumco Techxiv株式会社 | Polishing apparatus and polishing method of semiconductor wafer |
JP2008080443A (en) | 2006-09-27 | 2008-04-10 | Covalent Materials Corp | Single-side polishing device |
JP2011121218A (en) * | 2009-12-09 | 2011-06-23 | Seiko Epson Corp | Nozzle plate, discharge head, method for manufacturing them, and discharge device |
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JPH09115989A (en) * | 1995-10-23 | 1997-05-02 | Rap Master S F T Kk | Method for aligning semiconductor wafer and water filling method |
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