TWI536493B - Separation apparatus, separation system, separation method and computer storage medium - Google Patents

Separation apparatus, separation system, separation method and computer storage medium Download PDF

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Publication number
TWI536493B
TWI536493B TW101137794A TW101137794A TWI536493B TW I536493 B TWI536493 B TW I536493B TW 101137794 A TW101137794 A TW 101137794A TW 101137794 A TW101137794 A TW 101137794A TW I536493 B TWI536493 B TW I536493B
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Taiwan
Prior art keywords
holding portion
substrate
wafer
processed
peeling
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TW101137794A
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Chinese (zh)
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TW201334111A (en
Inventor
平河修
吉高直人
相馬康孝
本田勝
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東京威力科創股份有限公司
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Priority to JP2011232198A priority Critical patent/JP5580805B2/en
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201334111A publication Critical patent/TW201334111A/en
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Publication of TWI536493B publication Critical patent/TWI536493B/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Description

剝離裝置、剝離系統、剝離方法及電腦記憶媒體 Stripping device, stripping system, stripping method and computer memory medium

本發明係關於剝離重合基板為被處理基板與支持基板之剝離裝置、包含該剝離裝置之剝離系統、使用該剝離裝置之剝離方法、程式及電腦記憶媒體。 The present invention relates to a peeling device in which a peeled laminated substrate is a substrate to be processed and a supporting substrate, a peeling system including the peeling device, a peeling method using the peeling device, a program, and a computer memory medium.

近年來,於例如半導體元件製造程序中,半導體晶圓(以下稱「晶圓」)大口徑化獲得進展。且業界要求在安裝等特定程序中晶圓薄型化。若直接將例如大口徑且較薄的晶圓運送或進行拋光處理,有於晶圓發生翹曲或破損之虞。因此,為補強例如晶圓,可將晶圓貼在例如係支持基板之晶圓或玻璃基板上。又,如此在晶圓與支持基板接合之狀態下進行晶圓拋光處理等既定處理後,剝離晶圓與支持基板。 In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as "wafers") have been greatly expanded in diameter. And the industry requires wafers to be thinner in specific programs such as installation. If a large-diameter and thin wafer is directly transported or polished, the wafer may be warped or damaged. Therefore, in order to reinforce, for example, a wafer, the wafer can be attached to a wafer or a glass substrate such as a support substrate. Further, after the predetermined process such as wafer polishing treatment is performed in a state where the wafer and the support substrate are bonded, the wafer and the support substrate are peeled off.

相關之晶圓與支持基板之剝離係使用例如剝離裝置進行。剝離裝置包含:第1架座,固持例如晶圓;第2架座,固持支持基板;及噴嘴,在晶圓與支持基板之間噴射液體。 The peeling of the associated wafer and the support substrate is performed using, for example, a peeling device. The peeling device includes a first holder that holds, for example, a wafer, a second holder that holds the support substrate, and a nozzle that ejects liquid between the wafer and the support substrate.

又,此剝離裝置中,自噴嘴朝經接合之晶圓與支持基板之間,以大於該晶圓與支持基板之間之接合強度之噴射壓,更宜以大於接合強度2倍以 上之噴射壓噴射液體,藉此剝離晶圓與支持基板(專利文獻1)。 Moreover, in the stripping device, the ejection pressure from the nozzle to the bonded wafer and the support substrate is greater than the bonding strength of the bonding strength between the wafer and the supporting substrate. The sprayed liquid is ejected by the upper jet, thereby peeling off the wafer and the support substrate (Patent Document 1).

【先前技術文獻】 [Previous Technical Literature]

【專利文獻】 [Patent Literature]

【專利文獻1】日本特開平9-167724號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 9-167724

然而,使用如專利文獻1之剝離裝置時,以較大的噴射壓噴射液體,故有晶圓或支持基板蒙受損傷之虞。特別是晶圓薄型化故易受損傷。 However, when the peeling device of Patent Document 1 is used, the liquid is ejected with a large ejection pressure, so that the wafer or the supporting substrate is damaged. In particular, wafers are thin and susceptible to damage.

且以例如黏接劑接合晶圓與支持基板時,晶圓與支持基板之接合強度大,故需非常大的噴射壓的液體,為剝離晶圓與支持基板需甚多時間。 Further, when the wafer and the support substrate are bonded by, for example, an adhesive, the bonding strength between the wafer and the support substrate is large, so that a liquid having a very large ejection pressure is required, and it takes much time to peel off the wafer and the support substrate.

鑒於以上情事,本發明之目的在於適當且高效率地進行被處理基板與支持基板之剝離處理。 In view of the above circumstances, an object of the present invention is to appropriately and efficiently perform a peeling treatment of a substrate to be processed and a support substrate.

為達成該目的,本發明係一種剝離裝置,將以被處理基板與支持基板藉由黏接劑接合而成之重合基板剝離為被處理基板與支持基板,其特徵在於包含:第1固持部,在常溫狀態下固持被處理基板;第2固持部,在常溫狀態下固持支持基板;及移動機構,固持該第2固持部之外周部並使其沿鉛直方向移動,俾將由該第2固持部所固持之常溫的支持基板自其外周部朝中心部從由該第1固持部所固持之常溫的被處理基板上連續性地剝離。 In order to achieve the object, the present invention provides a peeling apparatus that peels a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent into a substrate to be processed and a supporting substrate, and is characterized by comprising: a first holding portion; Holding the substrate to be processed in a normal temperature state; the second holding portion holds the support substrate at a normal temperature; and the moving mechanism holds the outer peripheral portion of the second holding portion and moves it in the vertical direction, and the second holding portion is held by the second holding portion The support substrate which is held at normal temperature is continuously peeled off from the outer peripheral portion toward the center portion from the substrate to be treated which is held at a normal temperature by the first holding portion.

又,所謂常溫係進行被處理基板與支持基板之剝離處理之處理氛圍溫度,例如23℃。 Moreover, the processing atmosphere temperature at which the substrate to be treated and the support substrate are subjected to a peeling treatment at room temperature is, for example, 23 °C.

依本發明之剝離裝置,可使第2固持部之外周部沿鉛直方向移動,將由第2固持部所固持之常溫的支持基板自其外周部朝中心部從由第1固持部所固持之常溫的被處理基板上連續性地剝離。如此自外周部朝中心部將支持基板從被處理基板上連續性地剝離,故可輕易剝離被處理基板與支持基板。因此,被處理基板可不受到損傷而適當且均一地剝離被處理基板與支持基板。且亦可較以往更縮短剝離處理所需之時間。因此,依本發明,可適當且高效率地進行被處理基板與支持基板之剝離處理。 According to the peeling device of the present invention, the outer peripheral portion of the second holding portion can be moved in the vertical direction, and the normal temperature supporting substrate held by the second holding portion is held from the outer peripheral portion toward the central portion from the normal temperature held by the first holding portion. The substrate to be processed is continuously peeled off. Since the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the center portion, the substrate to be processed and the support substrate can be easily peeled off. Therefore, the substrate to be processed can be appropriately and uniformly peeled off from the substrate to be processed and the support substrate without being damaged. Moreover, the time required for the stripping process can be shortened more than before. Therefore, according to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed.

該移動機構亦可使該第2固持部之外周部呈圓環狀沿鉛直方向移動,將由該第2固持部所固持之支持基板自其外周部朝中心部從由該第1固持部所固持之被處理基板上連續性地剝離。 In the moving mechanism, the outer peripheral portion of the second holding portion may be moved in a circular shape in a vertical direction, and the support substrate held by the second holding portion may be held by the first holding portion from the outer peripheral portion toward the central portion. The substrate to be processed is continuously peeled off.

亦可配置該第1固持部於該第2固持部上方,該移動機構使該第2固持部朝鉛直下方移動。 The first holding portion may be disposed above the second holding portion, and the moving mechanism moves the second holding portion vertically downward.

亦可包含至少使該第1固持部或該第2固持部旋轉之旋轉機構。 A rotation mechanism that rotates at least the first holding portion or the second holding portion may be included.

該移動機構亦可包含:第1移動部,固持該第2固持部,且僅使該第2固持部之外周部沿鉛直方向移動;及第2移動部,固持該第1移動部,且使該第1移動部與該第2固持部沿鉛直方向移動。 The moving mechanism may include: a first moving portion that holds the second holding portion and moves only the outer peripheral portion of the second holding portion in the vertical direction; and the second moving portion holds the first moving portion and causes the moving portion to hold the first moving portion The first moving portion and the second holding portion move in the vertical direction.

該第1移動部亦可包含:複數缸筒,使該第2固持部之外周部沿鉛直方向移動;及支持柱,支持該第2固持部之中央部,俾藉由該複數缸筒沿鉛直方向移動該第2固持部之外周部時,該第2固持部之中央部的鉛直方向之位置不變化。 The first moving portion may include a plurality of cylinders that move the outer peripheral portion of the second holding portion in a vertical direction, and a support column that supports a central portion of the second holding portion, and the plurality of cylinders are vertically aligned When the outer peripheral portion of the second holding portion is moved in the direction, the position of the central portion of the second holding portion does not change in the vertical direction.

該第1移動部亦可包含: 伸縮囊,固持該第2固持部並可沿鉛直方向任意伸縮;及支持柱,設於該伸縮囊內部並支持該第2固持部之中央部,俾該伸縮囊收縮而沿鉛直方向移動該第2固持部之外周部時,該第2固持部之中央部的鉛直方向之位置不變化。 The first moving unit may also include: a bellows holding the second holding portion and arbitrarily extending and contracting in a vertical direction; and a support column disposed inside the bellows and supporting a central portion of the second holding portion, wherein the bellows is contracted to move in a vertical direction 2 When the outer peripheral portion of the holding portion is located, the position of the central portion of the second holding portion in the vertical direction does not change.

亦可包含對由該第1固持部與該第2固持部所固持之重合基板外周部之黏接劑供給該黏接劑之溶劑之溶劑供給部。 The solvent supply unit that supplies the solvent of the adhesive to the adhesive agent of the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion may be included.

依另一觀點本發明係一種剝離系統,包含上述剝離裝置,包含:剝離處理站,包含:該剝離裝置;第1清洗裝置,清洗於該剝離裝置經剝離之被處理基板;及第2清洗裝置,清洗於該剝離裝置經剝離之支持基板;送入送出站,相對於該剝離處理站送入送出被處理基板、支持基板或重合基板;及運送裝置,在該剝離處理站與該送入送出站之間,運送被處理基板、支持基板或重合基板。 According to another aspect, the present invention provides a peeling system comprising: the peeling device, comprising: the peeling device; the first cleaning device, the substrate to be processed which is peeled off by the peeling device; and the second cleaning device Cleaning the support substrate that has been peeled off by the peeling device; feeding the delivery station, feeding the substrate to be processed, the support substrate or the superposed substrate with respect to the peeling processing station; and transporting the device to and from the peeling processing station Between the stations, the substrate to be processed, the support substrate, or the superposed substrate are transported.

亦可包含於該剝離處理站,與對在該剝離處理站經剝離之被處理基板進行既定後處理之後處理站之間運送被處理基板之介面站。 It may be included in the peeling processing station, and a interface station that transports the substrate to be processed between the processing stations after performing a predetermined post-processing on the substrate to be processed which has been peeled off at the peeling processing station.

依又一觀點本發明係一種剝離方法,使用剝離裝置,將以被處理基板與支持基板藉由黏接劑接合而成之重合基板剝離為被處理基板與支持基板,其特徵在於該剝離裝置包含:第1固持部,在常溫狀態下固持被處理基板;第2固持部,在常溫狀態下固持支持基板;及移動機構,使該第2固持部之外周部沿鉛直方向移動,俾將由該第2固持部所固持之支持基板自其外周部朝中心部從由該第1固持部所固持之被處理基板上連續性地剝離;且該剝離方法包含: 第1程序,使該第2固持部之外周部沿鉛直方向移動,將由該第2固持部所固持之常溫的支持基板自其外周部朝中心部從由該第1固持部所固持之常溫的被處理基板上連續性地剝離;及第2程序,其後,使第2固持部整體沿鉛直方向移動,剝離被處理基板與支持基板。 According to still another aspect of the present invention, in a peeling method, a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent is peeled off into a substrate to be processed and a supporting substrate, wherein the peeling device includes The first holding portion holds the substrate to be processed at a normal temperature; the second holding portion holds the support substrate at a normal temperature; and the moving mechanism moves the outer peripheral portion of the second holding portion in the vertical direction. (2) The support substrate held by the holding portion is continuously peeled off from the outer peripheral portion toward the central portion from the substrate to be processed held by the first holding portion; and the peeling method includes: In the first step, the outer peripheral portion of the second holding portion is moved in the vertical direction, and the normal temperature supporting substrate held by the second holding portion is held from the outer peripheral portion toward the central portion from the normal temperature held by the first holding portion. The substrate to be processed is continuously peeled off; and the second program is thereafter, the entire second holding portion is moved in the vertical direction, and the substrate to be processed and the support substrate are peeled off.

又,所謂常溫係進行被處理基板與支持基板之剝離處理之處理氛圍溫度,例如23℃。 Moreover, the processing atmosphere temperature at which the substrate to be treated and the support substrate are subjected to a peeling treatment at room temperature is, for example, 23 °C.

亦可於該第1程序,使該第2固持部之外周部呈圓環狀沿鉛直方向移動,自外周部朝中心部將支持基板從被處理基板上連續性地剝離。 In the first program, the outer peripheral portion of the second holding portion is moved in a circular shape in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the central portion.

亦可配置該第1固持部於該第2固持部上方,在該第1程序與該第2程序,使該第2固持部朝鉛直下方移動。 The first holding portion may be disposed above the second holding portion, and the second holding portion is moved vertically downward in the first program and the second program.

該剝離裝置亦可包含至少使該第1固持部或該第2固持部旋轉之旋轉機構,於該第1程序,開始至少使該第1固持部或該第2固持部旋轉後,使該第2固持部之外周部沿鉛直方向移動,自外周部朝中心部將支持基板從被處理基板上連續性地剝離。 The peeling device may include a rotation mechanism that rotates at least the first holding portion or the second holding portion, and the first program starts to rotate at least the first holding portion or the second holding portion, and then the first peeling device 2 The outer peripheral portion of the holding portion moves in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the central portion.

亦可於該第1程序,對由該第1固持部與該第2固持部所固持之重合基板外周部黏接劑供給該黏接劑之溶劑。 In the first step, the solvent of the adhesive agent may be supplied to the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion.

按照依再一觀點之本發明,可提供一種可讀取之電腦記憶媒體,儲存有為藉由剝離裝置實行上述剝離方法,在控制該剝離裝置之控制部電腦上動作之程式。 According to still another aspect of the invention, there is provided a readable computer memory medium storing a program for operating on a computer of a control unit for controlling the peeling device by performing the peeling method by a peeling device.

依本發明,可適當且高效率地進行被處理基板與支持基板之剝離處理。 According to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed.

A1~A6‧‧‧程序 A1~A6‧‧‧ procedure

CW、CS、CT‧‧‧匣盒 C W , C S , C T ‧‧‧匣

G‧‧‧黏接劑 G‧‧‧Adhesive

H‧‧‧記憶媒體 H‧‧‧Memory Media

SJ‧‧‧接合面 S J ‧‧‧ joint surface

SN‧‧‧非接合面 S N ‧‧‧non-joined

S‧‧‧支持晶圓 S‧‧‧Support wafer

T‧‧‧重合晶圓 T‧‧‧ coincident wafer

WJ‧‧‧接合面 W J ‧‧‧ joint surface

WN‧‧‧非接合面 W N ‧‧‧non-joined

W‧‧‧被處理晶圓 W‧‧‧Processed Wafer

1‧‧‧剝離系統 1‧‧‧ peeling system

2‧‧‧送入送出站 2‧‧‧Send in and out of the station

3‧‧‧剝離處理站 3‧‧‧ Stripping station

4‧‧‧後處理站 4‧‧‧post processing station

5‧‧‧介面站 5‧‧‧Interface station

6‧‧‧晶圓運送區域 6‧‧‧ Wafer shipping area

10‧‧‧匣盒載置台 10‧‧‧匣Box mounting table

11‧‧‧匣盒載置板 11‧‧‧匣Box

20‧‧‧第1運送裝置 20‧‧‧1st transport device

30‧‧‧剝離裝置 30‧‧‧ peeling device

31‧‧‧第1清洗裝置 31‧‧‧1st cleaning device

32‧‧‧第2運送裝置 32‧‧‧2nd transport device

33‧‧‧第2清洗裝置 33‧‧‧Second cleaning device

40‧‧‧運送通道 40‧‧‧Transportation

41‧‧‧第3運送裝置 41‧‧‧3rd transport device

100‧‧‧處理容器 100‧‧‧Processing container

101‧‧‧吸氣口 101‧‧‧ suction port

102‧‧‧負壓產生裝置 102‧‧‧Negative pressure generating device

103‧‧‧吸氣管 103‧‧‧ suction pipe

110‧‧‧第1固持部 110‧‧‧1st holding unit

111‧‧‧第2固持部 111‧‧‧2nd holding unit

120‧‧‧本體部 120‧‧‧ Body Department

121‧‧‧多孔質體 121‧‧‧Porous body

122‧‧‧抽吸空間 122‧‧‧Sucking space

123、140‧‧‧抽吸管 123, 140‧‧ ‧ suction tube

130‧‧‧支持板 130‧‧‧Support board

150‧‧‧移動機構 150‧‧‧Mobile agencies

151‧‧‧第1鉛直移動部 151‧‧‧1st vertical movement

152‧‧‧第2鉛直移動部 152‧‧‧2nd vertical movement

153‧‧‧水平移動部 153‧‧‧Horizontal Moving Department

160‧‧‧缸筒 160‧‧‧Cylinder

161‧‧‧支持柱 161‧‧‧Support column

162‧‧‧支持板 162‧‧‧Support board

170‧‧‧驅動部 170‧‧‧ Drive Department

171‧‧‧支持構件 171‧‧‧Support components

180‧‧‧處理容器 180‧‧‧Processing container

190‧‧‧多孔式吸盤 190‧‧‧Multiple suction cups

191‧‧‧本體部 191‧‧ ‧ Body Department

192‧‧‧多孔質體 192‧‧‧Porous body

193‧‧‧吸盤驅動部 193‧‧‧Sucker drive department

194‧‧‧杯體 194‧‧‧ cup body

195‧‧‧排出管 195‧‧‧Draining tube

196‧‧‧排氣管 196‧‧‧Exhaust pipe

200‧‧‧軌條 200‧‧‧ rails

201‧‧‧臂部 201‧‧‧ Arms

202‧‧‧清洗液噴嘴 202‧‧‧cleaning liquid nozzle

203‧‧‧噴嘴驅動部 203‧‧‧Nozzle Drive Department

204‧‧‧待命部 204‧‧‧ Standby

210、213‧‧‧供給管 210, 213‧‧‧ supply pipe

211‧‧‧清洗液供給源 211‧‧‧cleaning fluid supply source

212、215‧‧‧供給設備群組 212, 215‧‧‧Supply device group

214‧‧‧氣體供給源 214‧‧‧ gas supply source

220‧‧‧旋轉吸盤 220‧‧‧Rotary suction cup

230‧‧‧白努利吸盤 230‧‧‧Whitenuuli sucker

231‧‧‧支持臂 231‧‧‧Support arm

232‧‧‧第1驅動部 232‧‧‧1st drive department

233‧‧‧第2驅動部 233‧‧‧2nd drive department

300‧‧‧控制部 300‧‧‧Control Department

310‧‧‧第1鉛直驅動部 310‧‧‧1st vertical drive

311‧‧‧伸縮囊 311‧‧‧ telescopic bladder

312‧‧‧支持柱 312‧‧‧Support column

313‧‧‧流體供給管 313‧‧‧ Fluid supply tube

320‧‧‧旋轉機構 320‧‧‧Rotating mechanism

330‧‧‧溶劑供給部 330‧‧‧Solvent Supply Department

331‧‧‧供給口 331‧‧‧ supply port

圖1係顯示依本實施形態之剝離系統構成概略之俯視圖。 Fig. 1 is a plan view showing a schematic configuration of a peeling system according to the present embodiment.

圖2係被處理晶圓與支持晶圓之側視圖。 Figure 2 is a side view of the processed wafer and the support wafer.

圖3係顯示剝離裝置構成概略之縱剖面圖。 Fig. 3 is a longitudinal sectional view showing the outline of a peeling device.

圖4係第1鉛直移動部之俯視圖。 Fig. 4 is a plan view of the first vertical moving portion.

圖5係顯示第1清洗裝置構成概略之縱剖面圖。 Fig. 5 is a longitudinal cross-sectional view showing the outline of a first cleaning device.

圖6係顯示第1清洗裝置構成概略之橫剖面圖。 Fig. 6 is a schematic cross-sectional view showing the configuration of a first cleaning device.

圖7係顯示第2清洗裝置構成概略之縱剖面圖。 Fig. 7 is a longitudinal sectional view showing the outline of a second cleaning device.

圖8係顯示第2運送裝置構成概略之側視圖。 Fig. 8 is a side view showing a schematic configuration of a second transport device.

圖9係顯示剝離處理主要程序之流程圖。 Figure 9 is a flow chart showing the main procedure of the stripping process.

圖10係顯示以第1固持部與第2固持部所固持重合晶圓之情形之說明圖。 FIG. 10 is an explanatory view showing a state in which the wafer is held by the first holding portion and the second holding portion.

圖11係顯示以第1鉛直移動部使第2固持部外周部朝鉛直下方移動之情形之說明圖。 FIG. 11 is an explanatory view showing a state in which the outer peripheral portion of the second holding portion is moved vertically downward by the first vertical moving portion.

圖12係顯示以第2鉛直移動部使第2固持部朝鉛直下方移動之情形之說明圖。 FIG. 12 is an explanatory view showing a state in which the second holding portion is moved vertically downward by the second vertical moving portion.

圖13係顯示已剝離被處理晶圓與支持晶圓之情形之說明圖。 Fig. 13 is an explanatory view showing a state in which the processed wafer and the supporting wafer have been peeled off.

圖14係顯示自第1固持部朝白努利吸盤傳遞被處理晶圓之情形之說明圖。 Fig. 14 is an explanatory view showing a state in which the wafer to be processed is transferred from the first holding portion to the white Nuo suction cup.

圖15係顯示自白努利吸盤朝多孔式吸盤傳遞被處理晶圓之情形之說明圖。 Fig. 15 is an explanatory view showing a state in which a wafer to be processed is transferred from a white Null suction cup to a multi-hole chuck.

圖16係顯示依另一實施形態之剝離裝置構成概略之縱剖面圖。 Fig. 16 is a longitudinal sectional view showing the outline of a peeling device according to another embodiment.

圖17係顯示依另一實施形態以第1鉛直移動部使第2固持部外周部朝鉛直下方移動之情形之說明圖。 FIG. 17 is an explanatory view showing a state in which the outer peripheral portion of the second holding portion is moved vertically downward by the first vertical moving portion according to another embodiment.

圖18係顯示依另一實施形態之剝離裝置構成概略之縱剖面圖。 Fig. 18 is a longitudinal sectional view showing the outline of a peeling device according to another embodiment.

圖19係顯示依另一實施形態之剝離裝置構成概略之縱剖面圖。 Fig. 19 is a longitudinal sectional view showing the outline of a peeling device according to another embodiment.

以下,說明關於本發明實施形態。圖1係顯示依本實施形態之剝離系統1構成概略之俯視圖。 Hereinafter, embodiments of the present invention will be described. Fig. 1 is a plan view showing a schematic configuration of a peeling system 1 according to the present embodiment.

剝離系統1中,如圖2所示將作為被處理基板之被處理晶圓W與作為支持基板之支持晶圓S以黏接劑G接合之作為重合基板之重合晶圓T剝離為被處理晶圓W與支持晶圓S。以下,被處理晶圓W中,稱以黏接劑G接合支持晶圓S之面為「接合面WJ」,稱與該接合面WJ相反之一側之面為「非接合面WN」。同樣地,支持晶圓S中,稱以黏接劑G接合被處理晶圓W之面為「接合面SJ」,稱與該接合面SJ相反之一側之面為「非接合面SN」。又,被處理晶圓W係作為產品之晶圓,於例如接合面WJ形成有複數電子電路。且被處理晶圓W中,例如非接合面WN經拋光處理,經薄型化(例如厚度為50μm)。支持晶圓S其直徑與被處理晶圓W相同,係支持該被處理晶圓W之晶圓。又,本實施形態中,雖說明關於作為支持基板使用晶圓之情形,但亦可使用例如玻璃基板等其他基板。 In the peeling system 1, as shown in FIG. 2, the processed wafer W as a substrate to be processed and the superposed wafer T as a superposed substrate bonded to the supporting wafer S as a supporting substrate by the bonding agent G are peeled off into a processed crystal. Circle W and support wafer S. Hereinafter, in the wafer W to be processed, the surface on which the bonding wafer S is bonded by the bonding agent G is referred to as "joining surface W J ", and the surface on the opposite side to the bonding surface W J is referred to as "non-bonding surface W N "." Similarly, in the support wafer S, the surface on which the wafer W to be processed is bonded by the adhesive G is referred to as "joining surface S J ", and the surface opposite to the joint surface S J is referred to as "non-joining surface S". N "". Further, the wafer W to be processed is a wafer of a product, and a plurality of electronic circuits are formed, for example, on the bonding surface W J . Further, in the processed wafer W, for example, the non-joining surface W N is polished and thinned (for example, having a thickness of 50 μm). The support wafer S has the same diameter as the processed wafer W, and supports the wafer of the processed wafer W. Further, in the present embodiment, the case where the wafer is used as the support substrate will be described, but other substrates such as a glass substrate may be used.

剝離系統1如圖1所示具有一體連接下列者之構成:送入送出站2,在例如與外部之間將可分別收納複數被處理晶圓W、複數支持晶圓S、複數重合晶圓T之匣盒CW、CS、CT加以送入送出;剝離處理站3,包含對被處理晶圓W、支持晶圓S、重合晶圓T施行既定處理之各種處理裝置;及介面站5,鄰接剝離處理站3並在與後處理站4之間傳遞被處理晶圓W。 As shown in FIG. 1, the peeling system 1 has a configuration in which one of the following is integrally connected to the delivery station 2, and for example, externally, a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of overlapping wafers T can be accommodated, respectively. The cassettes C W , C S , and C T are fed and sent; the stripping station 3 includes various processing devices for performing the predetermined processing on the processed wafer W, the supporting wafer S, and the coincident wafer T; and the interface station 5 The processed wafer W is transferred between the stripping processing station 3 and the post-processing station 4.

送入送出站2與剝離處理站3沿X方向(圖1中上下方向)排成一列而配置。在此等送入送出站2與剝離處理站3之間形成晶圓運送區域6。且介面站5配置於送入送出站2、剝離處理站3及晶圓運送區域6之Y方向負方向側(圖1中左方向側)。 The feeding/unloading station 2 and the peeling processing station 3 are arranged in a line in the X direction (vertical direction in FIG. 1). The wafer transfer region 6 is formed between the feed station 2 and the peeling processing station 3. Further, the interface station 5 is disposed on the negative direction side (the left direction side in FIG. 1) of the feeding/receiving station 2, the peeling processing station 3, and the wafer transfer region 6 in the Y direction.

於送入送出站2設有匣盒載置台10。於匣盒載置台10設有複數,例如3個匣盒載置板11。匣盒載置板11沿Y方向(圖1中左右方向)排成一列配置。於此等匣盒載置板11,相對於剝離系統1外部送入送出匣盒CW、CS、 CT時,可載置匣盒CW、CS、CT。如此送入送出站2可保有複數被處理晶圓W、複數支持晶圓S、複數重合晶圓T。又,匣盒載置板11之個數不由本實施形態限定,可任意決定。且預先對經送入送入送出站2之複數重合晶圓T進行檢查,以辨別為包含正常被處理晶圓W之重合晶圓T與包含有缺陷之被處理晶圓W之重合晶圓T。 A cassette mounting table 10 is provided at the feeding/receiving station 2. The cassette mounting table 10 is provided with a plurality of, for example, three cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the Y direction (the horizontal direction in Fig. 1). Within such cassette mounting plate 11, with respect to the stripping system 1 out of the cassette into an external C W, C S, when C T, may be placed on the cassette C W, C S, C T . The feed station 2 can maintain a plurality of processed wafers W, a plurality of support wafers S, and a plurality of coincident wafers T. Further, the number of the cassette mounting plates 11 is not limited by the embodiment, and can be arbitrarily determined. And the plurality of coincident wafers T fed to the delivery station 2 are inspected in advance to identify the coincident wafer T including the normal processed wafer W and the coincident wafer T containing the defective processed wafer W. .

於晶圓運送區域6配置第1運送裝置20。第1運送裝置20包含可沿例如鉛直方向、水平方向(Y方向、X方向)並繞著鉛直軸任意移動之運送臂。第1運送裝置20可在晶圓運送區域6內移動,在送入送出站2與剝離處理站3之間運送被處理晶圓W、支持晶圓S、重合晶圓T。 The first transport device 20 is disposed in the wafer transport area 6. The first transport device 20 includes a transport arm that can move arbitrarily around the vertical axis in, for example, the vertical direction and the horizontal direction (Y direction, X direction). The first transport device 20 is movable in the wafer transfer region 6, and transports the processed wafer W, the support wafer S, and the superposed wafer T between the feed-in/out station 2 and the peeling processing station 3.

剝離處理站3包含將重合晶圓T剝離為被處理晶圓W與支持晶圓S之剝離裝置30。於剝離裝置30之Y方向負方向側(圖1中左方向側)配置有清洗經剝離之被處理晶圓W之第1清洗裝置31。在剝離裝置30與第1清洗裝置31之間設有第2運送裝置32。且於剝離裝置30之Y方向正方向側(圖1中右方向側)配置有清洗經剝離之支持晶圓S之第2清洗裝置33。如此剝離處理站3中,自介面站5側起第1清洗裝置31、第2運送裝置32、剝離裝置30、第2清洗裝置33依序排成一列配置。 The peeling processing station 3 includes a peeling device 30 that peels the superposed wafer T into a processed wafer W and a supporting wafer S. The first cleaning device 31 that cleans the peeled processed wafer W is disposed on the negative side of the Y direction of the peeling device 30 (the left side in FIG. 1). A second transport device 32 is provided between the peeling device 30 and the first cleaning device 31. A second cleaning device 33 that cleans the peeled supporting wafer S is disposed on the positive side (the right side in FIG. 1) of the stripping device 30 in the Y direction. In the peeling processing station 3, the first cleaning device 31, the second transport device 32, the peeling device 30, and the second cleaning device 33 are arranged in a line from the interface station 5 side.

於介面站5設有在沿X方向延伸之運送通道40上可任意移動之第3運送裝置41。第3運送裝置41可沿鉛直方向及繞著鉛直軸(沿θ方向)任意移動,在剝離處理站3與後處理站4之間運送被處理晶圓W。 The interface station 5 is provided with a third transport device 41 that is arbitrarily movable on the transport path 40 extending in the X direction. The third transport device 41 is arbitrarily movable in the vertical direction and around the vertical axis (in the θ direction), and transports the processed wafer W between the peeling processing station 3 and the post-processing station 4.

又,於後處理站4,對在剝離處理站3經剝離之被處理晶圓W進行既定後處理。作為既定後處理,進行例如安裝被處理晶圓W之處理,或檢查被處理晶圓W上電子電路之電特性之處理,將被處理晶圓W切割為每一晶片之處理等。 Further, at the post-processing station 4, a predetermined post-processing is performed on the wafer W to be processed which has been peeled off at the peeling processing station 3. As a predetermined post-processing, for example, a process of mounting the wafer W to be processed, or a process of inspecting electrical characteristics of the electronic circuit on the wafer W to be processed, a process of cutting the wafer W to be processed into each wafer, or the like is performed.

其次,說明關於上述剝離裝置30之構成。剝離裝置30如圖3所示包含可密封內部之處理容器100。於處理容器100之側面形成被處理晶圓W、 支持晶圓S、重合晶圓T之送入送出口(未經圖示),於該送入送出口設有開合閘門(未經圖示)。 Next, the configuration of the above-described peeling device 30 will be described. The peeling device 30 includes a process container 100 that can seal the inside as shown in FIG. Forming the processed wafer W on the side of the processing container 100, The wafer S and the feed/outlet of the wafer W are supported (not shown), and an opening and closing gate (not shown) is provided at the feed port.

於處理容器100之底面形成抽吸該處理容器100內部氛圍之吸氣口101。吸氣口101連接連通例如真空泵等負壓產生裝置102之吸氣管103。 An intake port 101 for sucking the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100. The intake port 101 is connected to an intake pipe 103 that communicates with a negative pressure generating device 102 such as a vacuum pump.

於處理容器100內部設有:第1固持部110,以下表面吸附固持常溫,例如23℃的被處理晶圓W;及第2固持部111,以上表面載置固持常溫,例如23℃的支持晶圓S。 The inside of the processing container 100 is provided with a first holding portion 110, and the following surface is adsorbed and held at a normal temperature, for example, a processed wafer W of 23 ° C; and a second holding portion 111, and a supporting crystal having a normal temperature, for example, 23 ° C is placed on the upper surface. Round S.

第1固持部110設在第2固持部111之上方,配置成與第2固持部111對向。亦即,於處理容器100內部,在配置被處理晶圓W於上側,且配置支持晶圓S於下側之狀態下,對重合晶圓T進行剝離處理。 The first holding portion 110 is disposed above the second holding portion 111 and is disposed to face the second holding portion 111 . In other words, in the processing container 100, the superposed wafer T is subjected to a peeling process in a state where the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side.

於第1固持部110使用例如多孔式吸盤。第1固持部110包含平板狀本體部120。於本體部120下表面側設有多孔質體121。多孔質體121其直徑大致與例如被處理晶圓W相同,抵接該被處理晶圓W之非接合面WN。又,作為多孔質體121使用例如碳化矽。 For example, a porous chuck is used for the first holding portion 110. The first holding portion 110 includes a flat body portion 120. A porous body 121 is provided on the lower surface side of the body portion 120. The porous body 121 has a diameter substantially the same as, for example, the wafer W to be processed, and abuts against the non-joining surface W N of the wafer W to be processed. Further, as the porous body 121, for example, niobium carbide is used.

且於本體部120內部多孔質體121之上方形成抽吸空間122。形成抽吸空間122,俾包覆例如多孔質體121。抽吸空間122連接抽吸管123。抽吸管123連接例如真空泵等負壓產生裝置(未經圖示)。又,自抽吸管123經由抽吸空間122與多孔質體121抽吸被處理晶圓之非接合面WN,吸附固持該被處理晶圓W於第1固持部110。 A suction space 122 is formed above the porous body 121 inside the body portion 120. The suction space 122 is formed, and the porous body 121 is coated, for example. The suction space 122 is connected to the suction pipe 123. The suction pipe 123 is connected to a negative pressure generating device such as a vacuum pump (not shown). Further, the suction pipe 123 sucks the non-joining surface W N of the processed wafer from the porous body 121 via the suction space 122, and adsorbs and holds the processed wafer W on the first holding portion 110.

於第1固持部110上表面設有支持該第1固持部110之支持板130。支持板130由處理容器100之頂棚面支持。又,亦可省略本實施形態之支持板130,第1固持部110抵接處理容器100之頂棚面並由其支持。 A support plate 130 that supports the first holding portion 110 is provided on the upper surface of the first holding portion 110. The support plate 130 is supported by the ceiling surface of the processing container 100. Further, the support plate 130 of the present embodiment may be omitted, and the first holding portion 110 may be in contact with and supported by the ceiling surface of the processing container 100.

於第2固持部111內部設有用來吸附固持支持晶圓S之抽吸管140。抽 吸管140連接例如真空泵等負壓產生裝置(未經圖示)。又,第2固持部111中使用係彈性體之例如鋁。 A suction pipe 140 for adsorbing and holding the support wafer S is provided inside the second holding portion 111. Pump The suction pipe 140 is connected to a negative pressure generating device such as a vacuum pump (not shown). Further, for example, aluminum is used as the elastic body in the second holding portion 111.

於第2固持部111下方設有使第2固持部111及支持晶圓S沿鉛直方向及水平方向移動之移動機構150。移動機構150包含:第1鉛直移動部151,固持第2固持部111,且僅使第2固持部111外周部沿鉛直方向移動以作為第1移動部;第2鉛直移動部152,固持第1鉛直移動部151,且使第1鉛直移動部151與第2固持部111沿鉛直方向移動以作為第2移動部;及水平移動部153,使第1鉛直移動部151、第2鉛直移動部152及第2固持部111沿水平方向移動。 A moving mechanism 150 that moves the second holding portion 111 and the supporting wafer S in the vertical direction and the horizontal direction is provided below the second holding portion 111. The moving mechanism 150 includes a first vertical moving portion 151, and holds the second holding portion 111, and moves only the outer peripheral portion of the second holding portion 111 in the vertical direction as the first moving portion, and the second vertical moving portion 152 holds the first moving portion 152. The vertical moving portion 151 moves the first vertical moving portion 151 and the second holding portion 111 in the vertical direction as the second moving portion, and the horizontal moving portion 153 causes the first vertical moving portion 151 and the second vertical moving portion 152. The second holding portion 111 moves in the horizontal direction.

第1鉛直移動部151、第2鉛直移動部152、水平移動部153沿鉛直方向自上而下依序配置。 The first vertical moving portion 151, the second vertical moving portion 152, and the horizontal moving portion 153 are arranged in this order from the top to the bottom in the vertical direction.

第1鉛直移動部151包含:複數,例如6個缸筒160,使第2固持部111外周部呈圓環狀沿鉛直方向移動;支持柱161,支持第2固持部111之中央部;及支持板162,支持缸筒160與支持柱161。 The first vertical moving portion 151 includes a plurality of, for example, six cylinders 160, the outer peripheral portion of the second holding portion 111 is moved in a circular shape in a vertical direction, and the support column 161 supports the central portion of the second holding portion 111; The plate 162 supports the cylinder 160 and the support column 161.

如圖4所示6個缸筒160在與支持板162相同之圓周上以等間隔方式配置。且此等缸筒160配置於對應第2固持部111外周部之位置。支持柱161配置於對應支持板162之中央部,第2固持部111之中央部之位置。亦即,配置支持柱161,俾以缸筒160使第2固持部111之外周部朝鉛直下方移動時,該第2固持部111中央部鉛直方向之位置不變化。 As shown in Fig. 4, the six cylinders 160 are arranged at equal intervals on the same circumference as the support plate 162. Further, the cylinders 160 are disposed at positions corresponding to the outer peripheral portion of the second holding portion 111. The support post 161 is disposed at a position of a central portion of the corresponding support plate 162 and a central portion of the second holding portion 111. In other words, when the support column 161 is disposed and the outer peripheral portion of the second holding portion 111 is moved vertically downward by the cylinder 160, the position of the central portion of the second holding portion 111 in the vertical direction does not change.

第2鉛直移動部152如圖3所示包含:驅動部170,使支持板162昇降;及支持構件171,支持支持板162。 As shown in FIG. 3, the second vertical moving unit 152 includes a driving unit 170 for lifting and lowering the support plate 162, and a support member 171 for supporting the support plate 162.

驅動部170包含例如滾珠螺桿(未經圖示)與使該滾珠螺桿轉動之馬達(未經圖示)。且支持構件171可沿鉛直方向任意伸縮,設於支持板162與水 平移動部153之間例如3處。 The drive unit 170 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. And the support member 171 can be arbitrarily stretched in the vertical direction, and is disposed on the support plate 162 and the water. There are, for example, three places between the flat moving portions 153.

水平移動部153包含例如滾珠螺桿(未經圖示)與使該滾珠螺桿轉動之馬達(未經圖示),可使第1鉛直移動部151、第2鉛直移動部152及第2固持部111沿水平方向移動。 The horizontal moving portion 153 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw, and the first vertical moving portion 151, the second vertical moving portion 152, and the second holding portion 111 can be used. Move in the horizontal direction.

又,於第2固持部111下方設有用來自下方支持重合晶圓T或支持晶圓S並使其昇降之昇降銷(未經圖示)。昇降銷可貫穿形成於第2固持部111之穿通孔(未經圖示),自第2固持部111上表面突出。 Further, a lift pin (not shown) for supporting and lifting the wafer T or the support wafer S from below is provided below the second holding portion 111. The lift pin can penetrate through the through hole (not shown) formed in the second holding portion 111 and protrude from the upper surface of the second holding portion 111.

其次,說明關於上述第1清洗裝置31之構成。第1清洗裝置31如圖5所示包含可密封內部之處理容器180。於處理容器180側面形成被處理晶圓W之送入送出口(未經圖示),於該送入送出口設有開合閘門(未經圖示)。 Next, the configuration of the first cleaning device 31 will be described. As shown in FIG. 5, the first cleaning device 31 includes a processing container 180 that can seal the inside. A feeding port (not shown) of the processed wafer W is formed on the side surface of the processing container 180, and an opening and closing gate (not shown) is provided at the feeding port.

於處理容器180內之中央部設有固持被處理晶圓W並使其旋轉之多孔式吸盤190。多孔式吸盤190包含平板狀本體部191,與設於本體部191上表面側之多孔質體192。多孔質體192其直徑大致與例如被處理晶圓W相同,抵接該被處理晶圓W之非接合面WN。又,作為多孔質體192使用例如碳化矽。多孔質體192連接抽吸管(未經圖示),自該抽吸管經由多孔質體192抽吸被處理晶圓W之非接合面WN,藉此可在多孔式吸盤190上吸附固持該被處理晶圓W。 A porous chuck 190 that holds and rotates the wafer W to be processed is provided at a central portion of the processing container 180. The porous chuck 190 includes a flat body portion 191 and a porous body 192 provided on the upper surface side of the body portion 191. The porous body 192 has a diameter substantially the same as, for example, the wafer W to be processed, and abuts against the non-joining surface W N of the wafer W to be processed. Further, as the porous body 192, for example, tantalum carbide is used. The porous body 192 is connected to a suction pipe (not shown), and the non-joining surface W N of the processed wafer W is sucked from the suction pipe via the porous body 192, whereby the porous suction cup 190 can be adsorbed and held. The processed wafer W.

於多孔式吸盤190下方設有例如包含馬達等之吸盤驅動部193。多孔式吸盤190可藉由吸盤驅動部193旋轉至既定速度。且吸盤驅動部193中設有例如缸筒等昇降驅動源,多孔式吸盤190可任意昇降。 Below the porous chuck 190, a chuck driving portion 193 including a motor or the like is provided, for example. The perforated suction cup 190 can be rotated to a predetermined speed by the suction cup driving portion 193. Further, a suction driving source such as a cylinder is provided in the suction cup driving unit 193, and the multi-hole suction cup 190 can be arbitrarily moved up and down.

於多孔式吸盤190周圍設有將自被處理晶圓W飛散或落下之液體加以承接並回收之杯體194。杯體194下表面連接排出回收之液體之排出管195,與將杯體194內之氛圍加以抽真空並排氣之排氣管196。 A cup 194 for receiving and recovering liquid which has been scattered or dropped from the wafer W to be processed is provided around the porous chuck 190. The lower surface of the cup body 194 is connected to a discharge pipe 195 for discharging the recovered liquid, and an exhaust pipe 196 for evacuating and exhausting the atmosphere in the cup body 194.

如圖6所示於杯體194之X方向負方向(圖6中下方向)側形成沿Y方向(圖6中左右方向)延伸之軌條200。軌條200自例如杯體194之Y方向負方向(圖6中左方向)側外方形成至Y方向正方向(圖6中右方向)側外方。於軌條200安裝臂部201。 As shown in Fig. 6, a rail 200 extending in the Y direction (the horizontal direction in Fig. 6) is formed on the side of the cup body 194 in the negative X direction (the lower direction in Fig. 6). The rail 200 is formed outward from the side in the negative direction (left direction in FIG. 6) of the cup body 194 in the Y direction, and is outward in the positive direction (the right direction in FIG. 6) in the Y direction. The arm portion 201 is attached to the rail 200.

如圖5及圖6所示,臂部201支持對被處理晶圓W供給清洗液,例如係黏接劑G之溶劑之有機溶劑之清洗液噴嘴202。臂部201可藉由圖6所示之噴嘴驅動部203在軌條200上任意移動。藉此,清洗液噴嘴202可自設置於杯體194Y方向正方向側外方之待命部204移動至杯體194內被處理晶圓W之中心部上方,更可在該被處理晶圓W上沿被處理晶圓W之徑方向移動。且臂部201可藉由噴嘴驅動部203任意昇降,調節清洗液噴嘴202之高度。 As shown in FIGS. 5 and 6, the arm portion 201 supports a cleaning liquid nozzle 202 that supplies a cleaning liquid, for example, an organic solvent of a solvent of the adhesive G to the wafer W to be processed. The arm portion 201 can be arbitrarily moved on the rail 200 by the nozzle driving portion 203 shown in FIG. Thereby, the cleaning liquid nozzle 202 can be moved from the standby portion 204 disposed outside the positive direction side of the cup body 194Y to the center portion of the processed wafer W in the cup body 194, and more on the processed wafer W. Moves in the radial direction of the wafer W to be processed. Further, the arm portion 201 can be arbitrarily moved up and down by the nozzle driving portion 203 to adjust the height of the cleaning liquid nozzle 202.

於清洗液噴嘴202使用例如2流體噴嘴。清洗液噴嘴202如圖5所示連接對該清洗液噴嘴202供給清洗液之供給管210。供給管210連通於內部儲存清洗液之清洗液供給源211。於供給管210設有包含控制清洗液之流動之閥或流量調節部等之供給設備群組212。且清洗液噴嘴202連接對該清洗液噴嘴202供給惰性氣體,例如氮氣之供給管213。供給管213連通於內部儲存惰性氣體之氣體供給源214。於供給管213設有包含控制惰性氣體之流動之閥或流量調節部等之供給設備群組215。又,清洗液與惰性氣體於清洗液噴嘴202內混合,自該清洗液噴嘴202對被處理晶圓W供給之。又,於以下有時會僅稱混合清洗液與惰性氣體者為「清洗液」。 For example, a 2-fluid nozzle is used for the cleaning liquid nozzle 202. As shown in FIG. 5, the cleaning liquid nozzle 202 connects the supply pipe 210 to which the cleaning liquid nozzle 202 supplies the cleaning liquid. The supply pipe 210 is in communication with a cleaning liquid supply source 211 that internally stores the cleaning liquid. The supply pipe 210 is provided with a supply device group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting portion, and the like. The cleaning liquid nozzle 202 is connected to a supply pipe 213 for supplying an inert gas such as nitrogen to the cleaning liquid nozzle 202. The supply pipe 213 is in communication with a gas supply source 214 that internally stores an inert gas. The supply pipe 213 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting portion, and the like. Further, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 202, and the cleaning liquid nozzle 202 is supplied to the processed wafer W. In addition, in the following, the "cleaning liquid" may be referred to simply as a mixed cleaning liquid and an inert gas.

又,於多孔式吸盤190下方亦可設置用來自下方支持被處理晶圓W並使其昇降之昇降銷(未經圖示)。相關情形下,昇降銷可貫穿形成於多孔式吸盤190之穿通孔(未經圖示),自多孔式吸盤190上表面突出。又,可不使多孔式吸盤190昇降而代之以使昇降銷昇降,在與多孔式吸盤190之間傳遞被處理晶圓W。 Further, a lift pin (not shown) for supporting and lifting the wafer W from below may be provided below the porous chuck 190. In the related case, the lift pin may protrude from the upper surface of the porous chuck 190 through a through hole (not shown) formed in the porous chuck 190. Further, instead of raising and lowering the multi-hole chuck 190, the lift pins can be moved up and down, and the wafer W to be processed can be transferred between the porous chucks 190 and the plurality of chucks 190.

且第2清洗裝置33之構成與上述第1清洗裝置31之構成大致相同。 第2清洗裝置33中,如圖7所示不設置第1清洗裝置31之多孔式吸盤190,代之以設置旋轉吸盤220。旋轉吸盤220包含水平之上表面,於該上表面設有抽吸例如支持晶圓S之抽吸口(未經圖示)。藉由自此抽吸口抽吸,可在旋轉吸盤220上吸附固持支持晶圓S。第2清洗裝置33之其他構成與上述第1清洗裝置31之構成相同故省略說明。 The configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above. In the second cleaning device 33, as shown in Fig. 7, the porous suction cup 190 of the first cleaning device 31 is not provided, and instead, the rotary suction cup 220 is provided. The spin chuck 220 includes a horizontal upper surface on which a suction port (not shown) for supporting the wafer S is provided. The support wafer S can be adsorbed and held on the spin chuck 220 by suction from the suction port. The other configuration of the second cleaning device 33 is the same as that of the first cleaning device 31, and the description thereof will be omitted.

又,第2清洗裝置33中,於旋轉吸盤220下方亦可設置朝支持晶圓S背面,亦即非接合面SN噴射清洗液之背面潤洗噴嘴(未經圖示)。以由此背面潤洗噴嘴噴射之清洗液清洗支持晶圓S之非接合面SN與支持晶圓S之外周部。 Further, in the second cleaning device 33, a back surface rinsing nozzle (not shown) that sprays the cleaning liquid toward the back surface of the support wafer S, that is, the non-joining surface S N may be provided below the spin chuck 220. The non-joining surface S N of the support wafer S and the outer peripheral portion of the support wafer S are cleaned by the cleaning liquid sprayed by the backside rinse nozzle.

其次,說明關於上述第2運送裝置32之構成。第2運送裝置32如圖8所示包含固持被處理晶圓W之白努利吸盤230。白努利吸盤230可藉由噴出空氣使被處理晶圓W漂浮,以非接觸狀態抽吸懸垂被處理晶圓W並固持之。白努利吸盤230由支持臂231支持。支持臂231由第1驅動部232支持。藉由此第1驅動部232,支持臂231可繞著水平軸任意轉動,且沿水平方向伸縮。於第1驅動部232下方設有第2驅動部233。藉由此第2驅動部233,第1驅動部232可繞著鉛直軸任意旋轉,且沿鉛直方向昇降。 Next, the configuration of the second transport device 32 will be described. As shown in FIG. 8, the second transport device 32 includes a white Nuo suction cup 230 that holds the wafer W to be processed. The white Nuo suction cup 230 can float the processed wafer W by ejecting air, and suction and hold the processed wafer W in a non-contact state. The white Nuo suction cup 230 is supported by the support arm 231. The support arm 231 is supported by the first drive unit 232. By the first driving portion 232, the support arm 231 can be arbitrarily rotated about the horizontal axis and expand and contract in the horizontal direction. A second drive unit 233 is provided below the first drive unit 232. By the second driving unit 233, the first driving unit 232 can arbitrarily rotate around the vertical axis and move up and down in the vertical direction.

又,第3運送裝置41具有與上述第2運送裝置32相同之構成故省略說明。惟第3運送裝置41之第2驅動部233安裝於圖1所示之運送通道40,第3運送裝置41可在運送通道40上移動。 Further, the third transport device 41 has the same configuration as that of the second transport device 32, and description thereof will be omitted. However, the second driving unit 233 of the third transport device 41 is attached to the transport path 40 shown in FIG. 1, and the third transport unit 41 is movable on the transport path 40.

以上剝離系統1中,如圖1所示設有控制部300。控制部300係例如電腦,包含程式儲存部(未經圖示)。程式儲存部內儲存有於剝離系統1中控制被處理晶圓W、支持晶圓S、重合晶圓T之處理之程式。且程式儲存部內亦儲存有控制上述各種處理裝置或運送裝置等驅動系動作,以實現剝離系統1中後述剝離處理之程式。又,該程式記錄於例如電腦可讀取之硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等可由電腦讀取之記憶媒體H,亦可自該記憶媒體H安裝於控制部300。 In the above peeling system 1, the control unit 300 is provided as shown in FIG. The control unit 300 is, for example, a computer, and includes a program storage unit (not shown). A program for controlling the processed wafer W, the supporting wafer S, and the superposed wafer T in the peeling system 1 is stored in the program storage unit. Further, a program for controlling the driving system such as the above-described various processing devices or transport devices is stored in the program storage unit to realize a program for the peeling process described later in the peeling system 1. Moreover, the program is recorded on a computer-readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like, and can be read by a computer. This memory medium H is attached to the control unit 300.

其次,說明關於使用如以上構成之剝離系統1進行之被處理晶圓W與支持晶圓S之剝離處理方法。圖9係顯示相關剝離處理主要程序例之流程圖。 Next, a method of peeling off the processed wafer W and the supporting wafer S by using the peeling system 1 configured as above will be described. Fig. 9 is a flow chart showing an example of a main procedure of the relevant stripping process.

首先,將收納複數片常溫,例如23℃之重合晶圓T之匣盒CT、空的匣盒CW及空的匣盒CS載置於送入送出站2之既定匣盒載置板11。藉由第1運送裝置20取出匣盒CT內之重合晶圓T,將其運送至剝離處理站3之剝離裝置30。此時,在被處理晶圓W配置於上側,且支持晶圓S配置於下側之狀態下運送重合晶圓T。 First, a plurality of sheets of normal temperature, for example, a cassette C T of a coincident wafer T of 23 ° C, an empty cassette C W , and an empty cassette C S are placed on a predetermined cassette mounting plate of the feeding/receiving station 2 11. The superposed wafer T in the cassette C T is taken out by the first transport device 20 and transported to the peeling device 30 of the peeling processing station 3. At this time, the wafer W to be processed is placed on the upper side, and the superposed wafer T is conveyed while the support wafer S is placed on the lower side.

經送入剝離裝置30之重合晶圓T由第2固持部111吸附固持。其後,如圖10所示藉由移動機構150之第2鉛直移動部152使第2固持部111上昇,以第1固持部110與第2固持部111包夾重合晶圓T並固持之。此時,第1固持部110吸附固持被處理晶圓W之非接合面WN,第2固持部111吸附固持支持晶圓S之非接合面SN。此時,由第1固持部110固持之被處理晶圓W之溫度為常溫,例如23℃,由第2固持部111固持之支持晶圓S之溫度亦為常溫,例如23℃。又,以後於剝離裝置30中剝離被處理晶圓W與支持晶圓S期間內,被處理晶圓W與支持晶圓S之溫度分別維持於常溫。 The superposed wafer T fed to the peeling device 30 is adsorbed and held by the second holding portion 111. Thereafter, as shown in FIG. 10, the second holding portion 111 is raised by the second vertical moving portion 152 of the moving mechanism 150, and the first holding portion 110 and the second holding portion 111 are sandwiched and held by the wafer W. At this time, the first holding portion 110 adsorbs and holds the non-joining surface W N of the wafer W to be processed, and the second holding portion 111 adsorbs and holds the non-joining surface S N of the supporting wafer S. At this time, the temperature of the wafer W to be processed held by the first holding portion 110 is normal temperature, for example, 23 ° C, and the temperature of the supporting wafer S held by the second holding portion 111 is also normal temperature, for example, 23 ° C. Further, in the subsequent period in which the wafer W and the supporting wafer S are peeled off from the peeling device 30, the temperatures of the processed wafer W and the supporting wafer S are maintained at normal temperatures, respectively.

其後,如圖11所示藉由移動機構150之第1鉛直移動部151僅使第2固持部111之外周部呈圓環狀朝鉛直下方移動。亦即,藉由缸筒160使第2固持部111之外周部朝鉛直下方移動時,第2固持部111之中央部由支持柱161支持,該第2固持部111中央部鉛直方向之位置不變化。 Thereafter, as shown in FIG. 11, the first vertical moving portion 151 of the moving mechanism 150 moves only the outer peripheral portion of the second holding portion 111 in a circular shape downward. In other words, when the outer peripheral portion of the second holding portion 111 is moved vertically downward by the cylinder 160, the central portion of the second holding portion 111 is supported by the support column 161, and the position of the central portion of the second holding portion 111 in the vertical direction is not Variety.

相關情形下,由第2固持部111固持之支持晶圓S自其外周部起朝中心部從由第1固持部110固持之被處理晶圓W上連續性地被剝離。在此,如上述於被處理晶圓W之接合面WJ形成有電子電路,故一旦欲剝離被處理晶圓W與支持晶圓S,即會對接合面WJ、SJ施加甚大的負載,有接合面WJ上的電子電路蒙受損傷之虞。關於此點,本實施形態中,從被處理晶圓 W上自外周部朝中心部連續性地剝離支持晶圓S,故對接合面WJ、SJ不會施加較大的負載。因此,可抑制電子電路之損傷。 In the case where the support wafer S held by the second holding portion 111 is continuously peeled off from the outer peripheral portion toward the center portion from the wafer W to be processed held by the first holding portion 110. Here, since the electronic circuit is formed on the bonding surface W J of the wafer W to be processed, when the wafer W to be processed and the supporting wafer S are to be peeled off, a large load is applied to the bonding surfaces W J and S J . The electronic circuit on the joint surface W J is damaged. In this regard, in the present embodiment, since the support wafer S is continuously peeled from the outer peripheral portion toward the central portion from the wafer W to be processed, a large load is not applied to the joint faces W J and S J . Therefore, damage to the electronic circuit can be suppressed.

其後,在僅被處理晶圓W之中心部與支持晶圓S之中心部黏接之狀態下,如圖12所示藉由第2鉛直移動部152使第2固持部111整體朝鉛直下方移動。又,在支持晶圓S之外周部朝鉛直下方撓曲之狀態下,自被處理晶圓W剝離支持晶圓S。其後,如圖13所示藉由第1鉛直移動部151使第2固持部111與支持晶圓S之外周部朝鉛直上方移動,使該第2固持部111與支持晶圓S平坦化。如此,剝離由第1固持部110固持之被處理晶圓W,與由第2固持部111固持之支持晶圓S(圖9之程序A1)。 Thereafter, in a state in which only the center portion of the wafer W to be processed is bonded to the center portion of the support wafer S, as shown in FIG. 12, the second holding portion 111 is entirely vertically lowered by the second vertical moving portion 152. mobile. Further, the support wafer S is peeled off from the wafer W to be processed while the peripheral portion of the support wafer S is bent downward vertically. Then, as shown in FIG. 13 , the second holding portion 111 and the outer peripheral portion of the support wafer S are vertically moved upward by the first vertical moving portion 151 to planarize the second holding portion 111 and the support wafer S. In this manner, the wafer W to be processed held by the first holding portion 110 and the supporting wafer S held by the second holding portion 111 are peeled off (procedure A1 of FIG. 9).

其後,藉由第2運送裝置32將在剝離裝置30經剝離之被處理晶圓W運送至第1清洗裝置31。在此,說明關於由第2運送裝置32進行之被處理晶圓W之運送方法。 Thereafter, the processed wafer W that has been peeled off by the peeling device 30 is transported to the first cleaning device 31 by the second transport device 32. Here, a method of transporting the processed wafer W by the second transport device 32 will be described.

如圖14所示使支持臂231伸長,將白努利吸盤230配置於由第1固持部110固持之被處理晶圓W下方。其後,使白努利吸盤230上昇,停止由第1固持部110中之抽吸管123抽吸被處理晶圓W。又,自第1固持部110朝白努利吸盤230傳遞被處理晶圓W。此時,被處理晶圓W之接合面WJ雖由白努利吸盤230固持,但白努利吸盤230以非接觸狀態固持被處理晶圓W,故被處理晶圓W接合面WJ上之電子電路不會蒙受損傷。 As shown in FIG. 14, the support arm 231 is extended, and the whitenuuli chuck 230 is placed under the wafer W to be held by the first holding portion 110. Thereafter, the white Nucleus suction cup 230 is raised to stop the suction of the wafer W to be processed by the suction pipe 123 in the first holding portion 110. Further, the wafer W to be processed is transferred from the first holding portion 110 toward the white Nuo suction cup 230. At this time, the bonding surface W J of the processed wafer W is held by the white Nuo suction cup 230, but the white Nuo suction cup 230 holds the processed wafer W in a non-contact state, so that the processed wafer W is bonded to the surface W J The electronic circuit will not be damaged.

其次如圖15所示,轉動支持臂231,使白努利吸盤230移動至第1清洗裝置31之多孔式吸盤190上方,並反轉白努利吸盤230,使被處理晶圓W朝下方。此時,令多孔式吸盤190上昇至較杯體194更上方並使其待命。其後,自白努利吸盤230朝多孔式吸盤190傳遞被處理晶圓W並由其吸附固持。 Next, as shown in Fig. 15, the support arm 231 is rotated to move the white Nuo suction cup 230 above the multi-hole chuck 190 of the first cleaning device 31, and the white Nuo suction cup 230 is reversed so that the wafer W to be processed faces downward. At this time, the perforated suction cup 190 is raised above the cup 194 and allowed to stand by. Thereafter, the processed wafer W is transferred from the white Snoop chuck 230 toward the multi-hole chuck 190 and adsorbed and held by it.

如此多孔式吸盤190吸附固持被處理晶圓W後,多孔式吸盤190即下降至既定位置。接著,藉由臂部201移動待命部204之清洗液噴嘴202至 被處理晶圓W中心部上方。其後,藉由多孔式吸盤190使被處理晶圓W旋轉,並同時自清洗液噴嘴202對被處理晶圓W之接合面WJ供給清洗液。藉由離心力使經供給之清洗液擴散至被處理晶圓W接合面WJ全面,清洗該被處理晶圓W之接合面WJ(圖9之程序A2)。 After the porous chuck 190 adsorbs and holds the wafer W to be processed, the porous chuck 190 is lowered to a predetermined position. Next, the cleaning liquid nozzle 202 of the standby portion 204 is moved by the arm portion 201 to the upper portion of the center portion of the wafer W to be processed. Thereafter, the wafer W to be processed is rotated by the porous chuck 190, and the cleaning liquid is supplied from the cleaning liquid nozzle 202 to the bonding surface W J of the wafer W to be processed. By the centrifugal force of the cleaning liquid is supplied via diffusion bonding to the treated wafer W W J comprehensive cleaning the joint surface of the treated wafer W W J (FIG. 9 of the program A2).

在此,如上述預先對經送入送入送出站2之複數重合晶圓T進行檢查,辨別為包含正常的被處理晶圓W之重合晶圓T與包含有缺陷的被處理晶圓W之重合晶圓T。 Here, the plurality of coincident wafers T fed to the delivery station 2 are inspected in advance, and the superposed wafer T including the normal processed wafer W and the wafer W containing the defective wafer are identified. Coincident wafer T.

於程序A2清洗自正常的重合晶圓T經剝離之正常的被處理晶圓W之接合面WJ後,藉由第3運送裝置41運送自正常的重合晶圓T經剝離之正常的被處理晶圓W至後處理站4。又,此以第3運送裝置41進行之被處理晶圓W之運送與上述以第2運送裝置32進行之被處理晶圓W之運送大致相同故省略說明。其後,於後處理站4對被處理晶圓W進行既定後處理(圖9之程序A3)。如此,被處理晶圓W被產品化。 After the process A2 cleans the bonding surface W J of the normal processed wafer W from which the normal overlapping wafer T is peeled off, the third transfer device 41 transports the normal processed wafer T from the normal processed wafer T. Wafer W to post-processing station 4. In addition, the conveyance of the wafer W to be processed by the third transport device 41 is substantially the same as the transport of the wafer W to be processed by the second transport device 32, and description thereof will be omitted. Thereafter, the post-processing station 4 performs predetermined post processing on the wafer W to be processed (procedure A3 of FIG. 9). In this way, the processed wafer W is commercialized.

另一方面,於程序A2清洗自有缺陷的重合晶圓T經剝離之有缺陷的被處理晶圓W之接合面WJ後,藉由第1運送裝置20運送自有缺陷的重合晶圓T經剝離之有缺陷的被處理晶圓W至送入送出站2。其後,自送入送出站2朝外部送出有缺陷的被處理晶圓W並回收之(圖9之程序A4)。 On the other hand, after the program A2 cleans the bonding surface W J of the defective wafer W which has been peeled off from the defective wafer T, the self-defective coincident wafer T is transported by the first transport device 20 The defective wafer W to be processed is peeled off to be fed to the delivery station 2. Thereafter, the defective processed wafer W is sent out from the feeding/receiving station 2 to the outside and is collected (procedure A4 of Fig. 9).

在對被處理晶圓W進行上述程序A2~A4期間內,藉由第1運送裝置20將由剝離裝置30剝離之支持晶圓S運送至第2清洗裝置33。又,於第2清洗裝置33清洗支持晶圓S之接合面SJ(圖9之程序A5)。又,第2清洗裝置33中支持晶圓S之清洗與上述第1清洗裝置31中被處理晶圓W之清洗相同故省略說明。 During the execution of the above-described procedures A2 to A4 for the wafer W to be processed, the support wafer S peeled off by the peeling device 30 is transported to the second cleaning device 33 by the first transport device 20. Moreover, the bonding surface S J of the support wafer S is cleaned by the second cleaning device 33 (the program A5 of FIG. 9). Further, the cleaning of the support wafer S in the second cleaning device 33 is the same as the cleaning of the wafer W to be processed in the first cleaning device 31, and description thereof will be omitted.

其後,藉由第1運送裝置20將接合面SJ經清洗之支持晶圓S運送至送入送出站2。其後,自送入送出站2朝外部送出支持晶圓S並回收之(圖9之程序A6)。如此,結束一連串的被處理晶圓W與支持晶圓S之剝離處理。 Thereafter, the first transfer device 20 transports the bonded wafer S to which the bonding surface S J is cleaned to the feeding/receiving station 2. Thereafter, the support wafer S is sent out from the feed-in/out station 2 to the outside and is collected (procedure A6 of Fig. 9). In this way, the series of stripping processes of the processed wafer W and the supporting wafer S are ended.

依以上實施形態之剝離裝置30,可使第2固持部111之外周部朝鉛直下方移動,將由第2固持部111固持之常溫的支持晶圓S自其外周部朝中心部從由第1固持部110固持之常溫的被處理晶圓W上連續性地剝離。如此將支持晶圓S自外周部朝中心部從被處理晶圓W上連續性地剝離,故可以較小的負載輕易剝離被處理晶圓W與支持晶圓S。因此,被處理晶圓W上的電子電路可不受到損傷而適當地剝離被處理晶圓W與支持晶圓S。且亦可較以往更縮短剝離處理所需之時間。因此,依本實施形態,可適當且高效率地進行被處理晶圓W與支持晶圓S之剝離處理。 According to the peeling device 30 of the above embodiment, the outer peripheral portion of the second holding portion 111 can be moved vertically downward, and the normal temperature supporting wafer S held by the second holding portion 111 can be held from the outer peripheral portion toward the central portion by the first holding. The wafer W to be processed which is held at the normal temperature by the portion 110 is continuously peeled off. Since the support wafer S is continuously peeled from the outer peripheral portion toward the center portion from the processed wafer W in this manner, the processed wafer W and the support wafer S can be easily peeled off with a small load. Therefore, the electronic circuit on the processed wafer W can appropriately peel off the processed wafer W and the supporting wafer S without being damaged. Moreover, the time required for the stripping process can be shortened more than before. Therefore, according to the present embodiment, the peeling process of the wafer W to be processed and the support wafer S can be appropriately and efficiently performed.

且移動機構150包含第1鉛直移動部151與第2鉛直移動部152,故可階段性地進行被處理晶圓W與支持晶圓S之剝離處理。亦即,可藉由第1鉛直移動部151將支持晶圓S自外周部朝中心部從被處理晶圓W上連續性地剝離後,藉由第2鉛直移動部152完全剝離被處理晶圓W與支持晶圓S。如此藉由階段性地進行剝離處理,可均一剝離被處理晶圓W與支持晶圓S。且第1鉛直移動部151使第2固持部111之外周部呈圓環狀朝鉛直下方移動,故可更均一地剝離被處理晶圓W與支持晶圓S。 Further, since the moving mechanism 150 includes the first vertical moving portion 151 and the second vertical moving portion 152, the peeling process of the processed wafer W and the supporting wafer S can be performed stepwise. In other words, the support wafer S can be continuously peeled off from the processed wafer W from the outer peripheral portion toward the center portion by the first vertical moving portion 151, and the processed wafer can be completely peeled off by the second vertical moving portion 152. W and support wafer S. By performing the stripping process in stages, the processed wafer W and the supporting wafer S can be uniformly peeled off. Further, since the first vertical moving portion 151 moves the outer peripheral portion of the second holding portion 111 in a circular shape downward and downward, the processed wafer W and the supporting wafer S can be more uniformly peeled off.

依以上實施形態之剝離系統1,可於剝離裝置30將重合晶圓T剝離為被處理晶圓W與支持晶圓S後,於第1清洗裝置31清洗經剝離之被處理晶圓W,並於第2清洗裝置33清洗經剝離之支持晶圓S。如此依本實施形態,可於一剝離系統1內高效率地進行自被處理晶圓W與支持晶圓S之剝離至被處理晶圓W之清洗與支持晶圓S之清洗止之一連串剝離處理。且可於第1清洗裝置31與第2清洗裝置33分別並行進行被處理晶圓W之清洗與支持晶圓S之清洗。且亦可於剝離裝置30剝離被處理晶圓W與支持晶圓S期間內,於第1清洗裝置31與第2清洗裝置33處理另外的被處理晶圓W與支持晶圓S。因此,可高效率地剝離被處理晶圓W與支持晶圓S,可提升剝離處理之處理能力。 According to the peeling system 1 of the above embodiment, after the peeling device 30 peels the superposed wafer T into the processed wafer W and the supporting wafer S, the peeled processed wafer W is cleaned by the first cleaning device 31, and The peeled support wafer S is cleaned by the second cleaning device 33. According to this embodiment, it is possible to efficiently perform the peeling process from the peeling of the processed wafer W and the supporting wafer S to the cleaning of the processed wafer W and the cleaning of the supporting wafer S in one peeling system 1 . The cleaning of the wafer W to be processed and the cleaning of the supporting wafer S can be performed in parallel between the first cleaning device 31 and the second cleaning device 33, respectively. Further, during the process in which the peeling device 30 peels off the processed wafer W and the supporting wafer S, the first cleaning device 31 and the second cleaning device 33 may process the additional processed wafer W and the supporting wafer S. Therefore, the processed wafer W and the supporting wafer S can be efficiently peeled off, and the processing capability of the peeling treatment can be improved.

且可於如此一連串程序中,自被處理晶圓W與支持晶圓S之剝離進行 至被處理晶圓W之後處理,故可更提升晶圓處理之處理能力。 And in such a series of processes, the stripping of the processed wafer W and the supporting wafer S is performed. After processing to the processed wafer W, the processing power of the wafer processing can be further improved.

以上實施形態之剝離裝置30中,第1鉛直驅動部151係固持第2固持部111,且僅使第2固持部111之外周部沿鉛直方向移動之構成即可,可採取各種構成。例如亦可不包含第1鉛直驅動部151之缸筒160與支持柱161,代之以如圖16所示第1鉛直驅動部310包含伸縮囊311與支持柱312。 In the peeling device 30 of the above-described embodiment, the first vertical drive unit 151 is configured to hold the second holding portion 111 and to move only the outer peripheral portion of the second holding portion 111 in the vertical direction, and various configurations can be adopted. For example, the cylinder 160 and the support post 161 of the first vertical drive unit 151 may not be included, and instead, the first vertical drive unit 310 may include the bellows 311 and the support post 312 as shown in FIG. 16 .

伸縮囊311藉由可沿鉛直方向任意伸縮之例如不鏽鋼製之伸縮囊構成。伸縮囊311以其上表面固持第2固持部111,且其下表面由支持板162支持。伸縮囊311連接對該伸縮囊內部供給流體,例如壓縮空氣之流體供給管313。流體供給管313連接流體供給源(未經圖示)。又,藉由自流體供給管313對伸縮囊311供給流體,伸縮囊311伸長。 The bellows 311 is constituted by a bellows made of, for example, stainless steel which is arbitrarily expandable and contractible in the vertical direction. The bellows 311 holds the second holding portion 111 with its upper surface, and its lower surface is supported by the support plate 162. The bellows 311 is connected to a fluid supply pipe 313 that supplies a fluid, such as compressed air, to the inside of the bellows. The fluid supply pipe 313 is connected to a fluid supply source (not shown). Further, by supplying fluid to the bellows 311 from the fluid supply pipe 313, the bellows 311 is elongated.

支持柱312設於伸縮囊311內部。且支持柱312支持第2固持部111之中央部。 The support post 312 is disposed inside the bellows 311. The support post 312 supports the central portion of the second holding portion 111.

又,剝離裝置30之其他構成與上述實施形態之剝離裝置30之構成相同故省略說明。 Further, the other configuration of the peeling device 30 is the same as that of the peeling device 30 of the above-described embodiment, and description thereof will be omitted.

相關情形下,如圖17所示藉由第1鉛直移動部310僅使第2固持部111之外周部呈圓環狀朝鉛直下方移動。亦即,藉由伸縮囊311使第2固持部111之外周部朝鉛直下方移動時,第2固持部111之中央部由支持柱312支持,該第2固持部111中央部鉛直方向之位置不變化。如此,即可將由第2固持部111固持之支持晶圓S自其外周部朝中心部從由第1固持部110固持之被處理晶圓W上連續性地剝離。因此,於本實施形態亦可適當且均一地剝離被處理晶圓W與支持晶圓S。 In the case of the first vertical movement portion 310, only the outer peripheral portion of the second holding portion 111 is moved vertically downward in a circular shape as shown in FIG. In other words, when the outer peripheral portion of the second holding portion 111 is moved vertically downward by the bellows 311, the central portion of the second holding portion 111 is supported by the support post 312, and the position of the central portion of the second holding portion 111 in the vertical direction is not Variety. In this manner, the support wafer S held by the second holding portion 111 can be continuously peeled off from the outer peripheral portion toward the center portion from the wafer W to be processed held by the first holding portion 110. Therefore, in the present embodiment, the wafer W to be processed and the support wafer S can be appropriately and uniformly peeled off.

以上實施形態之剝離裝置30如圖18所示亦可包含使第1固持部110旋轉之旋轉機構320。旋轉機構320設於第1固持部110與支持板130之間。且旋轉機構320包含用來使第1固持部110旋轉之馬達(未經圖示)。又,剝 離裝置30之其他構成與上述實施形態之剝離裝置30之構成相同故省略說明。 The peeling device 30 of the above embodiment may include a rotating mechanism 320 that rotates the first holding portion 110 as shown in FIG. 18 . The rotation mechanism 320 is provided between the first holding portion 110 and the support plate 130. The rotation mechanism 320 includes a motor (not shown) for rotating the first holding portion 110. Peeling The other configuration of the separation device 30 is the same as that of the separation device 30 of the above-described embodiment, and thus the description thereof is omitted.

相關情形下,於上述程序A1,以第1固持部110與第2固持部111固持重合晶圓T後,藉由旋轉機構320使第1固持部110旋轉。此時第1固持部110之旋轉速度例如為1mm/秒~10mm/秒。其後,使第2固持部111之外周部朝鉛直下方移動,將支持晶圓S自外周部朝中心部從被處理晶圓W上連續性地剝離後,使第2固持部111整體朝鉛直下方移動,剝離被處理晶圓W與支持晶圓S。又,此被處理晶圓W與支持晶圓S之剝離方法與上述實施形態中說明之方法相同故省略說明。 In the case of the above-described procedure A1, after the first holding portion 110 and the second holding portion 111 hold the overlapping wafer T, the first holding portion 110 is rotated by the rotating mechanism 320. At this time, the rotational speed of the first holding portion 110 is, for example, 1 mm/sec to 10 mm/sec. Thereafter, the outer peripheral portion of the second holding portion 111 is moved vertically downward, and the support wafer S is continuously peeled off from the outer peripheral portion toward the center portion from the processed wafer W, and then the entire second holding portion 111 is vertically oriented. Moving downward, the processed wafer W and the supporting wafer S are peeled off. Further, the method of peeling off the wafer W to be processed and the support wafer S is the same as the method described in the above embodiment, and thus the description thereof is omitted.

依本實施形態,使第1固持部110旋轉,故可瓦解由黏接劑G造成的被處理晶圓W與支持晶圓S的平衡狀態。如此,其後即可順暢地使第2固持部111之外周部移動,可順暢地從被處理晶圓W上剝離支持晶圓S之外周部。因此,可更高效率地進行被處理晶圓W與支持晶圓S之剝離處理。 According to this embodiment, since the first holding portion 110 is rotated, the equilibrium state between the processed wafer W and the supporting wafer S by the adhesive G can be collapsed. In this way, the outer peripheral portion of the second holding portion 111 can be smoothly moved, and the outer peripheral portion of the support wafer S can be smoothly peeled off from the wafer W to be processed. Therefore, the peeling process of the wafer W to be processed and the support wafer S can be performed more efficiently.

又,上述實施形態中,旋轉機構320雖使第1固持部110旋轉,但亦可不設置旋轉機構320,代之以使第2固持部111旋轉之旋轉機構(未經圖示)。且亦可設置旋轉機構320與使第2固持部旋轉之旋轉機構雙方。 Further, in the above-described embodiment, the rotation mechanism 320 rotates the first holding portion 110, but may not include the rotation mechanism 320, and instead rotates the second holding portion 111 (not shown). Further, both the rotating mechanism 320 and the rotating mechanism that rotates the second holding portion may be provided.

以上實施形態之剝離裝置30如圖19所示亦可包含對由第1固持部110與第2固持部111固持之重合晶圓T外周部黏接劑G供給係該黏接劑G之溶劑之有機溶劑之溶劑供給部330。呈環狀設置溶劑供給部330,俾包圍重合晶圓T之外周部。且於溶劑供給部330形成複數供給有機溶劑之供給口331。又,溶劑供給部330不由本實施形態之形狀限定,可採取供給有機溶劑之各種形狀。例如於溶劑供給部330亦可使用包圍重合晶圓T外周部之杯狀者。且剝離裝置30之其他構成與上述實施形態之剝離裝置30之構成相同故省略說明。 As shown in FIG. 19, the peeling device 30 of the above embodiment may further include a solvent for supplying the adhesive G to the outer peripheral adhesive G of the superposed wafer T held by the first holding portion 110 and the second holding portion 111. A solvent supply unit 330 of an organic solvent. The solvent supply unit 330 is provided in a ring shape, and surrounds the outer peripheral portion of the superposed wafer T. Further, a supply port 331 for supplying a plurality of organic solvents is formed in the solvent supply unit 330. Further, the solvent supply unit 330 is not limited to the shape of the embodiment, and various shapes for supplying an organic solvent can be employed. For example, a cup-shaped person surrounding the outer peripheral portion of the superposed wafer T may be used as the solvent supply unit 330. The other configuration of the peeling device 30 is the same as that of the peeling device 30 of the above-described embodiment, and thus the description thereof will be omitted.

相關情形下,於上述程序A1以第1固持部110與第2固持部111固持 重合晶圓T後,自溶劑供給部330對在重合晶圓T外周部露出之黏接劑G供給有機溶劑。如此,重合晶圓T外周部之黏接劑G即由此有機溶劑溶解。因此,可減小其後使第2固持部111朝鉛直下方移動時之負載。又,使第2固持部111之外周部朝鉛直下方移動,將支持晶圓S自外周部朝中心部從被處理晶圓W上連續性地剝離後,使第2固持部111整體朝鉛直下方移動,剝離被處理晶圓W與支持晶圓S。 In the case of the above, the first holding portion 110 and the second holding portion 111 are held in the above-described program A1. After the wafer T is superposed, the organic solvent is supplied from the solvent supply unit 330 to the adhesive G exposed on the outer peripheral portion of the superposed wafer T. Thus, the adhesive G which overlaps the outer peripheral portion of the wafer T is dissolved by the organic solvent. Therefore, the load when the second holding portion 111 is moved vertically downward can be reduced. Further, the outer peripheral portion of the second holding portion 111 is moved vertically downward, and the support wafer S is continuously peeled off from the outer peripheral portion toward the center portion from the processed wafer W, and then the entire second holding portion 111 is vertically downward. Moving, stripping the processed wafer W and the supporting wafer S.

依本實施形態,可更減小於程序A1使第2固持部111朝鉛直下方移動時之負載,故可以更小的負載輕易剝離被處理晶圓W與支持晶圓S。因此,被處理晶圓W上的電子電路可不受到損傷而適當地剝離被處理晶圓W與支持晶圓S。且亦可更迅速地剝離被處理晶圓W與支持晶圓S。 According to this embodiment, the load when the second holding portion 111 is moved vertically downward can be further reduced in the program A1, so that the processed wafer W and the supporting wafer S can be easily peeled off with a smaller load. Therefore, the electronic circuit on the processed wafer W can appropriately peel off the processed wafer W and the supporting wafer S without being damaged. Moreover, the processed wafer W and the supporting wafer S can be peeled off more quickly.

以上實施形態中,移動機構150之第1鉛直移動部151雖使第2固持部111之外周部呈圓環狀沿鉛直方向移動,但亦可使第2固持部111之外周部一端部側沿鉛直方向移動。又,亦可自外周部一端部朝另一端部將支持晶圓S從被處理晶圓W上剝離。相關情形下,亦可連續性地剝離被處理晶圓W與支持晶圓S,故可適當且均一地剝離該被處理晶圓W與支持晶圓S。 In the above embodiment, the first vertical moving portion 151 of the moving mechanism 150 moves the outer peripheral portion of the second holding portion 111 in the vertical direction in an annular shape. However, the one end portion of the outer peripheral portion of the second holding portion 111 may be provided. Move in the vertical direction. Further, the support wafer S may be peeled off from the wafer W to be processed from one end portion of the outer peripheral portion toward the other end portion. In the related case, the processed wafer W and the supporting wafer S can be continuously peeled off, so that the processed wafer W and the supporting wafer S can be appropriately and uniformly peeled off.

又,以上實施形態中,雖在配置被處理晶圓W於上側,且配置支持晶圓S於下側之狀態下剝離此等被處理晶圓W與支持晶圓S,但被處理晶圓W與支持晶圓S之上下配置亦可相反。相關情形下,移動機構150亦可使第2固持部111朝鉛直上方移動。 Further, in the above embodiment, the processed wafer W and the supporting wafer S are peeled off while the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side, but the processed wafer W is processed. The opposite of the support wafer S above and below. In the related case, the moving mechanism 150 can also move the second holding portion 111 vertically upward.

以上實施形態之第2運送裝置32中,於白努利吸盤230表面亦可形成用來供給清洗液之複數供給口(未經圖示)。相關情形下,自白努利吸盤230朝第1清洗裝置31之多孔式吸盤190傳遞被處理晶圓W時,可自白努利吸盤230對被處理晶圓W之接合面WJ供給清洗液,清洗該接合面WJ,並亦清洗白努利吸盤230本身。如此,即可縮短其後第1清洗裝置31中被處理晶圓W之清洗時間,可更提升剝離處理之處理能力。且亦可清洗白努利吸盤230,故可適當地運送下一被處理晶圓W。 In the second transport device 32 of the above embodiment, a plurality of supply ports (not shown) for supplying the cleaning liquid may be formed on the surface of the Bainuuli chuck 230. In the case where the wafer W is transferred from the white Snoop chuck 230 to the porous chuck 190 of the first cleaning device 31, the cleaning liquid can be supplied to the bonding surface W J of the wafer W to be processed from the whiteur suction cup 230, and the cleaning liquid can be cleaned. The joint surface W J also cleans the white Nuo suction cup 230 itself. Thus, the cleaning time of the wafer W to be processed in the first cleaning device 31 can be shortened, and the processing capability of the peeling process can be further improved. Moreover, the white Nucleus chuck 230 can also be cleaned, so that the next processed wafer W can be appropriately transported.

以上實施形態中,第3運送裝置41雖包含白努利吸盤230,但亦可不包含此白努利吸盤230,代之以多孔式吸盤(未經圖示)。相關情形下,藉由多孔式吸盤亦可適當地吸附固持經薄型化之被處理晶圓W。 In the above embodiment, the third transport device 41 includes the white Nuo suction cup 230. However, the white Nuo suction cup 230 may not be included, and a porous suction cup (not shown) may be used instead. In the related case, the thinned wafer W to be processed can be appropriately adsorbed and held by the porous chuck.

以上實施形態中,於第1清洗裝置31與第2清洗裝置33之清洗液噴嘴202雖使用2流體噴嘴,但清洗液噴嘴202之形態可不由本實施形態限定而使用各種噴嘴。作為例如清洗液噴嘴202,亦可使用將供給清洗液之噴嘴與供給惰性氣體之噴嘴一體化之噴嘴體,或噴霧噴嘴、噴射噴嘴、超音波振盪噴嘴等。且為提升清洗處理之處理能力,亦可供給經加熱至例如80℃之清洗液。 In the above embodiment, the two fluid nozzles are used for the cleaning liquid nozzles 202 of the first cleaning device 31 and the second cleaning device 33. However, the cleaning liquid nozzles 202 can be used in various forms without being limited by the present embodiment. For example, the cleaning liquid nozzle 202 may be a nozzle body that integrates a nozzle that supplies the cleaning liquid with a nozzle that supplies the inert gas, or a spray nozzle, an injection nozzle, an ultrasonic oscillation nozzle, or the like. In order to improve the processing ability of the cleaning treatment, a cleaning liquid heated to, for example, 80 ° C may be supplied.

且於第1清洗裝置31與第2清洗裝置33,除清洗液噴嘴202外,亦可設置供給IPA(異丙醇)之噴嘴。相關情形下,藉由來自清洗液噴嘴202之清洗液清洗被處理晶圓W或支持晶圓S後,將被處理晶圓W或支持晶圓S上的清洗液取代為IPA。如此,即可更確實地清洗被處理晶圓W或支持晶圓S之接合面WJ、SJFurther, in addition to the cleaning liquid nozzle 202, the first cleaning device 31 and the second cleaning device 33 may be provided with a nozzle for supplying IPA (isopropyl alcohol). In the related case, after the processed wafer W or the supporting wafer S is cleaned by the cleaning liquid from the cleaning liquid nozzle 202, the cleaning liquid on the processed wafer W or the supporting wafer S is replaced with IPA. In this way, the bonding faces W J , S J of the wafer W to be processed or the supporting wafer S can be more reliably cleaned.

以上實施形態之被處理晶圓W與支持晶圓S之剝離方法在將例如被處理晶圓W與支持晶圓S之外周部因黏接劑G而被強力黏接並接合之重合晶圓T剝離為被處理晶圓W與支持晶圓S時特別有用。 In the method of peeling off the wafer W to be processed and the support wafer S in the above embodiment, for example, the wafer W and the wafer wafer W are strongly adhered and bonded to each other by the adhesive G at the peripheral portion of the support wafer S. It is particularly useful when peeling off the processed wafer W and the supporting wafer S.

此重合晶圓T亦可係僅黏接被處理晶圓W與支持晶圓S外周部並接合者。此時,形成為例如支持晶圓S表面外周部與被處理晶圓W上的黏接劑G黏接而接合,形成為支持晶圓S表面中心部不與黏接劑G黏接。或是,重合晶圓T亦可係黏接接合成被處理晶圓W與支持晶圓S外周部之黏接力大於中心部黏接力者。此時,於例如被處理晶圓W與支持晶圓S之外周部使用黏接力強的黏接劑,於中心部使用黏接力弱的黏接劑。 The coincident wafer T may be bonded only to the outer periphery of the wafer W to be processed and bonded. At this time, for example, the outer peripheral portion of the surface of the support wafer S is adhered to and bonded to the adhesive G on the wafer W to be processed, so that the center portion of the surface of the support wafer S is not bonded to the adhesive G. Alternatively, the coincident wafer T may be bonded and bonded such that the adhesion between the processed wafer W and the outer peripheral portion of the support wafer S is greater than the adhesion of the central portion. At this time, for example, an adhesive having a strong adhesive force is used for the peripheral portion of the wafer W to be processed and the support wafer S, and an adhesive having a weak adhesive force is used at the center portion.

相關情形下,於上述程序A1,可更減小使第2固持部111朝鉛直下方 移動時之負載。因此,可以更小的負載輕易剝離被處理晶圓W與支持晶圓S。且亦可更迅速地剝離被處理晶圓W與支持晶圓S。 In the related case, in the above procedure A1, the second holding portion 111 can be further reduced to be vertically downward. The load when moving. Therefore, the processed wafer W and the supporting wafer S can be easily peeled off with a smaller load. Moreover, the processed wafer W and the supporting wafer S can be peeled off more quickly.

且以上實施形態中,雖已說明關於在後處理站4對被處理晶圓W進行後處理以使其產品化之情形,但本發明亦可適用於例如將3維整合技術中所使用之被處理晶圓從支持晶圓上剝離之情形。又,所謂3維整合技術係近年來因應業界要求半導體元件高密集化之技術,不將高密集化之複數半導體元件配置於水平面內,代之以將該複數半導體元件堆疊成3維。此3維整合技術中,亦要求被堆疊之被處理晶圓薄型化,將該被處理晶圓接合於支持晶圓並進行既定處理。 Further, in the above embodiment, the case where the processed wafer W is post-processed in the post-processing station 4 for productization has been described, but the present invention is also applicable to, for example, the one used in the 3-dimensional integration technique. Handling the wafer from the support wafer. Further, in recent years, the three-dimensional integration technology has been a technique in which a semiconductor device is required to be highly dense in the prior art, and the high-density complex semiconductor element is not placed in a horizontal plane, and the complex semiconductor element is stacked in three dimensions instead. In the three-dimensional integration technology, the stacked wafer to be processed is also required to be thinned, and the processed wafer is bonded to the support wafer and subjected to predetermined processing.

以上,雖已參照附圖並同時說明關於本發明之較佳實施形態,但本發明不由相關例限定。吾人應理解只要是熟悉該技藝者,於申請專利範圍所記載之構想範疇內,當然可想到各種變更例或修正例,關於此等者當然亦屬於本發明之技術性範圍。 Although the preferred embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited by the related examples. It is to be understood that, as long as it is a person skilled in the art, various modifications and modifications are conceivable within the scope of the invention described in the claims.

本發明不限於此例可採用各種態樣。本發明亦可適用於基板係晶圓以外之FPD(平面顯示器)、光罩用倍縮光罩等其他基板時。 The present invention is not limited to this embodiment and various aspects can be employed. The present invention is also applicable to other substrates such as an FPD (flat display) other than a substrate-based wafer, and a reticle for a photomask.

G‧‧‧黏接劑 G‧‧‧Adhesive

S‧‧‧支持晶圓 S‧‧‧Support wafer

T‧‧‧重合晶圓 T‧‧‧ coincident wafer

W‧‧‧被處理晶圓 W‧‧‧Processed Wafer

30‧‧‧剝離裝置 30‧‧‧ peeling device

100‧‧‧處理容器 100‧‧‧Processing container

101‧‧‧吸氣口 101‧‧‧ suction port

102‧‧‧負壓產生裝置 102‧‧‧Negative pressure generating device

103‧‧‧吸氣管 103‧‧‧ suction pipe

110‧‧‧第1固持部 110‧‧‧1st holding unit

111‧‧‧第2固持部 111‧‧‧2nd holding unit

120‧‧‧本體部 120‧‧‧ Body Department

121‧‧‧多孔質體 121‧‧‧Porous body

122‧‧‧抽吸空間 122‧‧‧Sucking space

123、140‧‧‧抽吸管 123, 140‧‧ ‧ suction tube

130‧‧‧支持板 130‧‧‧Support board

150‧‧‧移動機構 150‧‧‧Mobile agencies

151‧‧‧第1鉛直移動部 151‧‧‧1st vertical movement

152‧‧‧第2鉛直移動部 152‧‧‧2nd vertical movement

153‧‧‧水平移動部 153‧‧‧Horizontal Moving Department

160‧‧‧缸筒 160‧‧‧Cylinder

161‧‧‧支持柱 161‧‧‧Support column

162‧‧‧支持板 162‧‧‧Support board

170‧‧‧驅動部 170‧‧‧ Drive Department

171‧‧‧支持構件 171‧‧‧Support components

Claims (15)

一種剝離裝置,將以被處理基板與支持基板藉由黏接劑接合而成之重合基板剝離為被處理基板與支持基板,其特徵在於包含:第1固持部,在常溫狀態下固持被處理基板;第2固持部,在常溫狀態下固持支持基板;及移動機構,固持該第2固持部之外周部並使其沿鉛直方向移動,俾將由該第2固持部所固持之常溫的支持基板自其外周部朝中心部從由該第1固持部所固持之常溫的被處理基板上連續性地剝離;該移動機構使該第2固持部之外周部呈圓環狀沿鉛直方向移動,將由該第2固持部所固持之支持基板自其外周部朝中心部從由該第1固持部所固持之被處理基板上連續性地剝離。 A peeling device that peels a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent into a substrate to be processed and a supporting substrate, comprising: a first holding portion that holds the substrate to be processed at a normal temperature a second holding portion that holds the support substrate at a normal temperature; and a moving mechanism that holds the outer peripheral portion of the second holding portion and moves it in the vertical direction, and the normal temperature supporting substrate held by the second holding portion The outer peripheral portion is continuously peeled off from the substrate to be processed at a normal temperature held by the first holding portion toward the center portion, and the moving mechanism moves the outer peripheral portion of the second holding portion in a circular shape in a vertical direction. The support substrate held by the second holding portion is continuously peeled off from the outer peripheral portion toward the center portion from the substrate to be processed held by the first holding portion. 如申請專利範圍第1項之剝離裝置,其中:配置該第1固持部於該第2固持部上方,該移動機構使該第2固持部朝鉛直下方移動。 The peeling device according to claim 1, wherein the first holding portion is disposed above the second holding portion, and the moving mechanism moves the second holding portion vertically downward. 如申請專利範圍第2項之剝離裝置,其中:包含至少使該第1固持部或該第2固持部旋轉之旋轉機構。 The peeling device of claim 2, wherein the peeling device includes at least a rotating mechanism that rotates the first holding portion or the second holding portion. 如申請專利範圍第1項之剝離裝置,其中:該移動機構包含:第1移動部,固持該第2固持部,且僅使該第2固持部之外周部沿鉛直方向移動;及第2移動部,固持該第1移動部,且使該第1移動部與該第2固持部沿鉛直方向移動。 The peeling device according to claim 1, wherein the moving mechanism includes: a first moving portion that holds the second holding portion and moves only the outer peripheral portion of the second holding portion in a vertical direction; and a second movement The first moving portion is held, and the first moving portion and the second holding portion are moved in the vertical direction. 如申請專利範圍第4項之剝離裝置,其中:該第1移動部包含:複數缸筒,使該第2固持部之外周部沿鉛直方向移動;及支持柱,支持該第2固持部之中央部,俾藉由該複數缸筒沿鉛直方向移動該第2固持部之外周部時,該第2固持部之中央部的鉛直方向之位置不變化。 The peeling device of claim 4, wherein the first moving portion includes: a plurality of cylinders that move the outer peripheral portion of the second holding portion in a vertical direction; and a support column that supports the center of the second holding portion When the plurality of cylinders move the outer peripheral portion of the second holding portion in the vertical direction, the position of the central portion of the second holding portion in the vertical direction does not change. 如申請專利範圍第4項之剝離裝置,其中:該第1移動部包含: 伸縮囊,固持該第2固持部並可沿鉛直方向任意伸縮;及支持柱,設於該伸縮囊內部,並支持該第2固持部之中央部,俾該伸縮囊收縮而沿鉛直方向移動該第2固持部之外周部時,該第2固持部之中央部的鉛直方向之位置不變化。 The stripping device of claim 4, wherein the first moving portion comprises: a bellows holding the second holding portion and arbitrarily expanding and contracting in a vertical direction; and a support column disposed inside the bellows and supporting a central portion of the second holding portion, wherein the bellows is contracted to move in a vertical direction When the outer periphery of the second holding portion is located, the position of the central portion of the second holding portion does not change in the vertical direction. 如申請專利範圍第1項之剝離裝置,其中:包含對於由該第1固持部與該第2固持部所固持之重合基板外周部之黏接劑供給該黏接劑之溶劑的溶劑供給部。 The peeling device according to claim 1, wherein the solvent supply unit that supplies the solvent of the adhesive to the adhesive of the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion is included. 一種剝離系統,具有如申請專利範圍第1項之剝離裝置,包含:剝離處理站,具有:該剝離裝置;第1清洗裝置,清洗於該剝離裝置經剝離之被處理基板;及第2清洗裝置,清洗於該剝離裝置經剝離之支持基板;送入送出站,相對於該剝離處理站送入送出被處理基板、支持基板或重合基板;及運送裝置,在該剝離處理站與該送入送出站之間,運送被處理基板、支持基板或重合基板。 A peeling system comprising: a peeling device according to claim 1 of the patent application, comprising: a peeling treatment station having: the peeling device; a first cleaning device, a substrate to be processed which is peeled off by the peeling device; and a second cleaning device Cleaning the support substrate that has been peeled off by the peeling device; feeding the delivery station, feeding the substrate to be processed, the support substrate or the superposed substrate with respect to the peeling processing station; and transporting the device to and from the peeling processing station Between the stations, the substrate to be processed, the support substrate, or the superposed substrate are transported. 如申請專利範圍第8項之剝離系統,其中:包含介面站,該介面站在該剝離處理站、與對於在該剝離處理站經剝離之被處理基板進行既定後處理之後處理站之間運送被處理基板。 The stripping system of claim 8 wherein: the interface station comprises a mezzanine station that is transported between the processing station after the predetermined post-processing of the substrate to be processed that has been stripped at the stripping station Process the substrate. 一種剝離方法,使用剝離裝置,將以被處理基板與支持基板藉由黏接劑接合而成之重合基板剝離為被處理基板與支持基板,其特徵在於該剝離裝置包含:第1固持部,在常溫狀態下固持被處理基板;第2固持部,在常溫狀態下固持支持基板;及移動機構,使該第2固持部之外周部沿鉛直方向移動,俾將由該第2固持部所固持之支持基板自其外周部朝中心部從由該第1固持部所固持之被處理基板上連續性地剝離;且該剝離方法包含:第1程序,使該第2固持部之外周部沿鉛直方向移動,將由該第2固持部所固持之常溫的支持基板自其外周部朝中心部從由該第1固持部所固 持之常溫的被處理基板上連續性地剝離;及第2程序,其後,使第2固持部整體沿鉛直方向移動,剝離被處理基板與支持基板。 A peeling method for peeling a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent into a substrate to be processed and a supporting substrate, wherein the peeling device includes: a first holding portion; The substrate to be processed is held at a normal temperature; the second holding portion holds the support substrate at a normal temperature; and the moving mechanism moves the outer peripheral portion of the second holding portion in the vertical direction to support the second holding portion. The substrate is continuously peeled off from the outer peripheral portion toward the central portion from the substrate to be processed held by the first holding portion; and the peeling method includes a first program for moving the outer peripheral portion of the second holding portion in the vertical direction The support substrate at normal temperature held by the second holding portion is fixed from the outer peripheral portion toward the central portion from the first holding portion. The substrate to be processed which is kept at room temperature is continuously peeled off; and the second program is thereafter, the entire second holding portion is moved in the vertical direction, and the substrate to be processed and the support substrate are peeled off. 如申請專利範圍第10項之剝離方法,其中:於該第1程序,使該第2固持部之外周部呈圓環狀沿鉛直方向移動,自外周部朝中心部將支持基板從被處理基板上連續性地剝離。 The peeling method according to claim 10, wherein in the first program, the outer peripheral portion of the second holding portion is moved in a circular shape in a vertical direction, and the support substrate is guided from the outer peripheral portion toward the central portion from the substrate to be processed. Peel off continuously. 如申請專利範圍第10或11項之剝離方法,其中:配置該第1固持部於該第2固持部上方,在該第1程序與該第2程序,使該第2固持部朝鉛直下方移動。 The peeling method of claim 10 or 11, wherein the first holding portion is disposed above the second holding portion, and the second holding portion is moved vertically downward in the first program and the second program . 如申請專利範圍第12項之剝離方法,其中:該剝離裝置包含至少使該第1固持部或該第2固持部旋轉之旋轉機構,於該第1程序,開始至少使該第1固持部或該第2固持部旋轉後,使該第2固持部之外周部沿鉛直方向移動,自外周部朝中心部將支持基板從被處理基板上連續性地剝離。 The peeling method according to claim 12, wherein the peeling device includes at least a rotating mechanism that rotates the first holding portion or the second holding portion, and at least the first holding portion or the first holding portion is started in the first program After the second holding portion is rotated, the outer peripheral portion of the second holding portion is moved in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the center portion. 如申請專利範圍第10或11項之剝離方法,其中:於該第1程序,對於由該第1固持部與該第2固持部所固持之重合基板外周部黏接劑供給該黏接劑之溶劑。 The peeling method according to claim 10, wherein in the first step, the adhesive agent is supplied to the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion. Solvent. 一種可讀取之電腦記憶媒體,儲存有為了藉由剝離裝置實行如申請專利範圍第11項之剝離方法,而在控制該剝離裝置之控制部電腦上動作之程式。 A readable computer memory medium storing a program for operating on a control unit computer that controls the stripping device in order to perform a peeling method as in claim 11 of the patent application by a peeling device.
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