TWI536493B - Separation apparatus, separation system, separation method and computer storage medium - Google Patents

Description

Stripping device, stripping system, stripping method and computer memory medium

The present invention relates to a peeling device in which a peeled laminated substrate is a substrate to be processed and a supporting substrate, a peeling system including the peeling device, a peeling method using the peeling device, a program, and a computer memory medium.

In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as "wafers") have been greatly expanded in diameter. And the industry requires wafers to be thinner in specific programs such as installation. If a large-diameter and thin wafer is directly transported or polished, the wafer may be warped or damaged. Therefore, in order to reinforce, for example, a wafer, the wafer can be attached to a wafer or a glass substrate such as a support substrate. Further, after the predetermined process such as wafer polishing treatment is performed in a state where the wafer and the support substrate are bonded, the wafer and the support substrate are peeled off.

The peeling of the associated wafer and the support substrate is performed using, for example, a peeling device. The peeling device includes a first holder that holds, for example, a wafer, a second holder that holds the support substrate, and a nozzle that ejects liquid between the wafer and the support substrate.

Moreover, in the stripping device, the ejection pressure from the nozzle to the bonded wafer and the support substrate is greater than the bonding strength of the bonding strength between the wafer and the supporting substrate. The sprayed liquid is ejected by the upper jet, thereby peeling off the wafer and the support substrate (Patent Document 1).

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 9-167724

However, when the peeling device of Patent Document 1 is used, the liquid is ejected with a large ejection pressure, so that the wafer or the supporting substrate is damaged. In particular, wafers are thin and susceptible to damage.

Further, when the wafer and the support substrate are bonded by, for example, an adhesive, the bonding strength between the wafer and the support substrate is large, so that a liquid having a very large ejection pressure is required, and it takes much time to peel off the wafer and the support substrate.

In view of the above circumstances, an object of the present invention is to appropriately and efficiently perform a peeling treatment of a substrate to be processed and a support substrate.

In order to achieve the object, the present invention provides a peeling apparatus that peels a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent into a substrate to be processed and a supporting substrate, and is characterized by comprising: a first holding portion; Holding the substrate to be processed in a normal temperature state; the second holding portion holds the support substrate at a normal temperature; and the moving mechanism holds the outer peripheral portion of the second holding portion and moves it in the vertical direction, and the second holding portion is held by the second holding portion The support substrate which is held at normal temperature is continuously peeled off from the outer peripheral portion toward the center portion from the substrate to be treated which is held at a normal temperature by the first holding portion.

Moreover, the processing atmosphere temperature at which the substrate to be treated and the support substrate are subjected to a peeling treatment at room temperature is, for example, 23 °C.

According to the peeling device of the present invention, the outer peripheral portion of the second holding portion can be moved in the vertical direction, and the normal temperature supporting substrate held by the second holding portion is held from the outer peripheral portion toward the central portion from the normal temperature held by the first holding portion. The substrate to be processed is continuously peeled off. Since the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the center portion, the substrate to be processed and the support substrate can be easily peeled off. Therefore, the substrate to be processed can be appropriately and uniformly peeled off from the substrate to be processed and the support substrate without being damaged. Moreover, the time required for the stripping process can be shortened more than before. Therefore, according to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed.

In the moving mechanism, the outer peripheral portion of the second holding portion may be moved in a circular shape in a vertical direction, and the support substrate held by the second holding portion may be held by the first holding portion from the outer peripheral portion toward the central portion. The substrate to be processed is continuously peeled off.

The first holding portion may be disposed above the second holding portion, and the moving mechanism moves the second holding portion vertically downward.

A rotation mechanism that rotates at least the first holding portion or the second holding portion may be included.

The moving mechanism may include: a first moving portion that holds the second holding portion and moves only the outer peripheral portion of the second holding portion in the vertical direction; and the second moving portion holds the first moving portion and causes the moving portion to hold the first moving portion The first moving portion and the second holding portion move in the vertical direction.

The first moving portion may include a plurality of cylinders that move the outer peripheral portion of the second holding portion in a vertical direction, and a support column that supports a central portion of the second holding portion, and the plurality of cylinders are vertically aligned When the outer peripheral portion of the second holding portion is moved in the direction, the position of the central portion of the second holding portion does not change in the vertical direction.

The first moving unit may also include: a bellows holding the second holding portion and arbitrarily extending and contracting in a vertical direction; and a support column disposed inside the bellows and supporting a central portion of the second holding portion, wherein the bellows is contracted to move in a vertical direction 2 When the outer peripheral portion of the holding portion is located, the position of the central portion of the second holding portion in the vertical direction does not change.

The solvent supply unit that supplies the solvent of the adhesive to the adhesive agent of the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion may be included.

According to another aspect, the present invention provides a peeling system comprising: the peeling device, comprising: the peeling device; the first cleaning device, the substrate to be processed which is peeled off by the peeling device; and the second cleaning device Cleaning the support substrate that has been peeled off by the peeling device; feeding the delivery station, feeding the substrate to be processed, the support substrate or the superposed substrate with respect to the peeling processing station; and transporting the device to and from the peeling processing station Between the stations, the substrate to be processed, the support substrate, or the superposed substrate are transported.

It may be included in the peeling processing station, and a interface station that transports the substrate to be processed between the processing stations after performing a predetermined post-processing on the substrate to be processed which has been peeled off at the peeling processing station.

According to still another aspect of the present invention, in a peeling method, a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent is peeled off into a substrate to be processed and a supporting substrate, wherein the peeling device includes The first holding portion holds the substrate to be processed at a normal temperature; the second holding portion holds the support substrate at a normal temperature; and the moving mechanism moves the outer peripheral portion of the second holding portion in the vertical direction. (2) The support substrate held by the holding portion is continuously peeled off from the outer peripheral portion toward the central portion from the substrate to be processed held by the first holding portion; and the peeling method includes: In the first step, the outer peripheral portion of the second holding portion is moved in the vertical direction, and the normal temperature supporting substrate held by the second holding portion is held from the outer peripheral portion toward the central portion from the normal temperature held by the first holding portion. The substrate to be processed is continuously peeled off; and the second program is thereafter, the entire second holding portion is moved in the vertical direction, and the substrate to be processed and the support substrate are peeled off.

Moreover, the processing atmosphere temperature at which the substrate to be treated and the support substrate are subjected to a peeling treatment at room temperature is, for example, 23 °C.

In the first program, the outer peripheral portion of the second holding portion is moved in a circular shape in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the central portion.

The first holding portion may be disposed above the second holding portion, and the second holding portion is moved vertically downward in the first program and the second program.

The peeling device may include a rotation mechanism that rotates at least the first holding portion or the second holding portion, and the first program starts to rotate at least the first holding portion or the second holding portion, and then the first peeling device 2 The outer peripheral portion of the holding portion moves in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the central portion.

In the first step, the solvent of the adhesive agent may be supplied to the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion.

According to still another aspect of the invention, there is provided a readable computer memory medium storing a program for operating on a computer of a control unit for controlling the peeling device by performing the peeling method by a peeling device.

According to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed.

A1~A6‧‧‧ procedure

C _W , C _S , C _T ‧‧‧匣

G‧‧‧Adhesive

H‧‧‧Memory Media

S _J ‧‧‧ joint surface

S _N ‧‧‧non-joined

S‧‧‧Support wafer

T‧‧‧ coincident wafer

W _J ‧‧‧ joint surface

W _N ‧‧‧non-joined

W‧‧‧Processed Wafer

1‧‧‧ peeling system

2‧‧‧Send in and out of the station

3‧‧‧ Stripping station

4‧‧‧post processing station

5‧‧‧Interface station

6‧‧‧ Wafer shipping area

10‧‧‧匣Box mounting table

11‧‧‧匣Box

20‧‧‧1st transport device

30‧‧‧ peeling device

31‧‧‧1st cleaning device

32‧‧‧2nd transport device

33‧‧‧Second cleaning device

40‧‧‧Transportation

41‧‧‧3rd transport device

100‧‧‧Processing container

101‧‧‧ suction port

102‧‧‧Negative pressure generating device

103‧‧‧ suction pipe

110‧‧‧1st holding unit

111‧‧‧2nd holding unit

120‧‧‧ Body Department

121‧‧‧Porous body

122‧‧‧Sucking space

123, 140‧‧ ‧ suction tube

130‧‧‧Support board

150‧‧‧Mobile agencies

151‧‧‧1st vertical movement

152‧‧‧2nd vertical movement

153‧‧‧Horizontal Moving Department

160‧‧‧Cylinder

161‧‧‧Support column

162‧‧‧Support board

170‧‧‧ Drive Department

171‧‧‧Support components

180‧‧‧Processing container

190‧‧‧Multiple suction cups

191‧‧ ‧ Body Department

192‧‧‧Porous body

193‧‧‧Sucker drive department

194‧‧‧ cup body

195‧‧‧Draining tube

196‧‧‧Exhaust pipe

200‧‧‧ rails

201‧‧‧ Arms

202‧‧‧cleaning liquid nozzle

203‧‧‧Nozzle Drive Department

204‧‧‧ Standby

210, 213‧‧‧ supply pipe

211‧‧‧cleaning fluid supply source

212, 215‧‧‧Supply device group

214‧‧‧ gas supply source

220‧‧‧Rotary suction cup

230‧‧‧Whitenuuli sucker

231‧‧‧Support arm

232‧‧‧1st drive department

233‧‧‧2nd drive department

300‧‧‧Control Department

310‧‧‧1st vertical drive

311‧‧‧ telescopic bladder

312‧‧‧Support column

313‧‧‧ Fluid supply tube

320‧‧‧Rotating mechanism

330‧‧‧Solvent Supply Department

331‧‧‧ supply port

Fig. 1 is a plan view showing a schematic configuration of a peeling system according to the present embodiment.

Figure 2 is a side view of the processed wafer and the support wafer.

Fig. 3 is a longitudinal sectional view showing the outline of a peeling device.

Fig. 4 is a plan view of the first vertical moving portion.

Fig. 5 is a longitudinal cross-sectional view showing the outline of a first cleaning device.

Fig. 6 is a schematic cross-sectional view showing the configuration of a first cleaning device.

Fig. 7 is a longitudinal sectional view showing the outline of a second cleaning device.

Fig. 8 is a side view showing a schematic configuration of a second transport device.

Figure 9 is a flow chart showing the main procedure of the stripping process.

FIG. 10 is an explanatory view showing a state in which the wafer is held by the first holding portion and the second holding portion.

FIG. 11 is an explanatory view showing a state in which the outer peripheral portion of the second holding portion is moved vertically downward by the first vertical moving portion.

FIG. 12 is an explanatory view showing a state in which the second holding portion is moved vertically downward by the second vertical moving portion.

Fig. 13 is an explanatory view showing a state in which the processed wafer and the supporting wafer have been peeled off.

Fig. 14 is an explanatory view showing a state in which the wafer to be processed is transferred from the first holding portion to the white Nuo suction cup.

Fig. 15 is an explanatory view showing a state in which a wafer to be processed is transferred from a white Null suction cup to a multi-hole chuck.

Fig. 16 is a longitudinal sectional view showing the outline of a peeling device according to another embodiment.

FIG. 17 is an explanatory view showing a state in which the outer peripheral portion of the second holding portion is moved vertically downward by the first vertical moving portion according to another embodiment.

Fig. 18 is a longitudinal sectional view showing the outline of a peeling device according to another embodiment.

Fig. 19 is a longitudinal sectional view showing the outline of a peeling device according to another embodiment.

Hereinafter, embodiments of the present invention will be described. Fig. 1 is a plan view showing a schematic configuration of a peeling system 1 according to the present embodiment.

In the peeling system 1, as shown in FIG. 2, the processed wafer W as a substrate to be processed and the superposed wafer T as a superposed substrate bonded to the supporting wafer S as a supporting substrate by the bonding agent G are peeled off into a processed crystal. Circle W and support wafer S. Hereinafter, in the wafer W to be processed, the surface on which the bonding wafer S is bonded by the bonding agent G is referred to as "joining surface W _J ", and the surface on the opposite side to the bonding surface W _{J is} referred to as "non-bonding surface W _N "." Similarly, in the support wafer S, the surface on which the wafer W to be processed is bonded by the adhesive G is referred to as "joining surface S _J ", and the surface opposite to the joint surface S _{J is} referred to as "non-joining surface S". _N "". Further, the wafer W to be processed is a wafer of a product, and a plurality of electronic circuits are formed, for example, on the bonding surface W _J . Further, in the processed wafer W, for example, the non-joining surface W _N is polished and thinned (for example, having a thickness of 50 μm). The support wafer S has the same diameter as the processed wafer W, and supports the wafer of the processed wafer W. Further, in the present embodiment, the case where the wafer is used as the support substrate will be described, but other substrates such as a glass substrate may be used.

As shown in FIG. 1, the peeling system 1 has a configuration in which one of the following is integrally connected to the delivery station 2, and for example, externally, a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of overlapping wafers T can be accommodated, respectively. The cassettes C _W , C _S , and C _{T are} fed and sent; the stripping station 3 includes various processing devices for performing the predetermined processing on the processed wafer W, the supporting wafer S, and the coincident wafer T; and the interface station 5 The processed wafer W is transferred between the stripping processing station 3 and the post-processing station 4.

The feeding/unloading station 2 and the peeling processing station 3 are arranged in a line in the X direction (vertical direction in FIG. 1). The wafer transfer region 6 is formed between the feed station 2 and the peeling processing station 3. Further, the interface station 5 is disposed on the negative direction side (the left direction side in FIG. 1) of the feeding/receiving station 2, the peeling processing station 3, and the wafer transfer region 6 in the Y direction.

A cassette mounting table 10 is provided at the feeding/receiving station 2. The cassette mounting table 10 is provided with a plurality of, for example, three cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the Y direction (the horizontal direction in Fig. 1). Within such cassette mounting plate 11, with respect to the stripping system 1 out of the cassette into an external C _W, C _S, when C _T, may be placed on the cassette _{C W, C S, C T} . The feed station 2 can maintain a plurality of processed wafers W, a plurality of support wafers S, and a plurality of coincident wafers T. Further, the number of the cassette mounting plates 11 is not limited by the embodiment, and can be arbitrarily determined. And the plurality of coincident wafers T fed to the delivery station 2 are inspected in advance to identify the coincident wafer T including the normal processed wafer W and the coincident wafer T containing the defective processed wafer W. .

The first transport device 20 is disposed in the wafer transport area 6. The first transport device 20 includes a transport arm that can move arbitrarily around the vertical axis in, for example, the vertical direction and the horizontal direction (Y direction, X direction). The first transport device 20 is movable in the wafer transfer region 6, and transports the processed wafer W, the support wafer S, and the superposed wafer T between the feed-in/out station 2 and the peeling processing station 3.

The peeling processing station 3 includes a peeling device 30 that peels the superposed wafer T into a processed wafer W and a supporting wafer S. The first cleaning device 31 that cleans the peeled processed wafer W is disposed on the negative side of the Y direction of the peeling device 30 (the left side in FIG. 1). A second transport device 32 is provided between the peeling device 30 and the first cleaning device 31. A second cleaning device 33 that cleans the peeled supporting wafer S is disposed on the positive side (the right side in FIG. 1) of the stripping device 30 in the Y direction. In the peeling processing station 3, the first cleaning device 31, the second transport device 32, the peeling device 30, and the second cleaning device 33 are arranged in a line from the interface station 5 side.

The interface station 5 is provided with a third transport device 41 that is arbitrarily movable on the transport path 40 extending in the X direction. The third transport device 41 is arbitrarily movable in the vertical direction and around the vertical axis (in the θ direction), and transports the processed wafer W between the peeling processing station 3 and the post-processing station 4.

Further, at the post-processing station 4, a predetermined post-processing is performed on the wafer W to be processed which has been peeled off at the peeling processing station 3. As a predetermined post-processing, for example, a process of mounting the wafer W to be processed, or a process of inspecting electrical characteristics of the electronic circuit on the wafer W to be processed, a process of cutting the wafer W to be processed into each wafer, or the like is performed.

Next, the configuration of the above-described peeling device 30 will be described. The peeling device 30 includes a process container 100 that can seal the inside as shown in FIG. Forming the processed wafer W on the side of the processing container 100, The wafer S and the feed/outlet of the wafer W are supported (not shown), and an opening and closing gate (not shown) is provided at the feed port.

An intake port 101 for sucking the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100. The intake port 101 is connected to an intake pipe 103 that communicates with a negative pressure generating device 102 such as a vacuum pump.

The inside of the processing container 100 is provided with a first holding portion 110, and the following surface is adsorbed and held at a normal temperature, for example, a processed wafer W of 23 ° C; and a second holding portion 111, and a supporting crystal having a normal temperature, for example, 23 ° C is placed on the upper surface. Round S.

The first holding portion 110 is disposed above the second holding portion 111 and is disposed to face the second holding portion 111 . In other words, in the processing container 100, the superposed wafer T is subjected to a peeling process in a state where the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side.

For example, a porous chuck is used for the first holding portion 110. The first holding portion 110 includes a flat body portion 120. A porous body 121 is provided on the lower surface side of the body portion 120. The porous body 121 has a diameter substantially the same as, for example, the wafer W to be processed, and abuts against the non-joining surface W _{N of the} wafer W to be processed. Further, as the porous body 121, for example, niobium carbide is used.

A suction space 122 is formed above the porous body 121 inside the body portion 120. The suction space 122 is formed, and the porous body 121 is coated, for example. The suction space 122 is connected to the suction pipe 123. The suction pipe 123 is connected to a negative pressure generating device such as a vacuum pump (not shown). Further, the suction pipe 123 sucks the non-joining surface W _{N of the} processed wafer from the porous body 121 via the suction space 122, and adsorbs and holds the processed wafer W on the first holding portion 110.

A support plate 130 that supports the first holding portion 110 is provided on the upper surface of the first holding portion 110. The support plate 130 is supported by the ceiling surface of the processing container 100. Further, the support plate 130 of the present embodiment may be omitted, and the first holding portion 110 may be in contact with and supported by the ceiling surface of the processing container 100.

A suction pipe 140 for adsorbing and holding the support wafer S is provided inside the second holding portion 111. Pump The suction pipe 140 is connected to a negative pressure generating device such as a vacuum pump (not shown). Further, for example, aluminum is used as the elastic body in the second holding portion 111.

A moving mechanism 150 that moves the second holding portion 111 and the supporting wafer S in the vertical direction and the horizontal direction is provided below the second holding portion 111. The moving mechanism 150 includes a first vertical moving portion 151, and holds the second holding portion 111, and moves only the outer peripheral portion of the second holding portion 111 in the vertical direction as the first moving portion, and the second vertical moving portion 152 holds the first moving portion 152. The vertical moving portion 151 moves the first vertical moving portion 151 and the second holding portion 111 in the vertical direction as the second moving portion, and the horizontal moving portion 153 causes the first vertical moving portion 151 and the second vertical moving portion 152. The second holding portion 111 moves in the horizontal direction.

The first vertical moving portion 151, the second vertical moving portion 152, and the horizontal moving portion 153 are arranged in this order from the top to the bottom in the vertical direction.

The first vertical moving portion 151 includes a plurality of, for example, six cylinders 160, the outer peripheral portion of the second holding portion 111 is moved in a circular shape in a vertical direction, and the support column 161 supports the central portion of the second holding portion 111; The plate 162 supports the cylinder 160 and the support column 161.

As shown in Fig. 4, the six cylinders 160 are arranged at equal intervals on the same circumference as the support plate 162. Further, the cylinders 160 are disposed at positions corresponding to the outer peripheral portion of the second holding portion 111. The support post 161 is disposed at a position of a central portion of the corresponding support plate 162 and a central portion of the second holding portion 111. In other words, when the support column 161 is disposed and the outer peripheral portion of the second holding portion 111 is moved vertically downward by the cylinder 160, the position of the central portion of the second holding portion 111 in the vertical direction does not change.

As shown in FIG. 3, the second vertical moving unit 152 includes a driving unit 170 for lifting and lowering the support plate 162, and a support member 171 for supporting the support plate 162.

The drive unit 170 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. And the support member 171 can be arbitrarily stretched in the vertical direction, and is disposed on the support plate 162 and the water. There are, for example, three places between the flat moving portions 153.

The horizontal moving portion 153 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw, and the first vertical moving portion 151, the second vertical moving portion 152, and the second holding portion 111 can be used. Move in the horizontal direction.

Further, a lift pin (not shown) for supporting and lifting the wafer T or the support wafer S from below is provided below the second holding portion 111. The lift pin can penetrate through the through hole (not shown) formed in the second holding portion 111 and protrude from the upper surface of the second holding portion 111.

Next, the configuration of the first cleaning device 31 will be described. As shown in FIG. 5, the first cleaning device 31 includes a processing container 180 that can seal the inside. A feeding port (not shown) of the processed wafer W is formed on the side surface of the processing container 180, and an opening and closing gate (not shown) is provided at the feeding port.

A porous chuck 190 that holds and rotates the wafer W to be processed is provided at a central portion of the processing container 180. The porous chuck 190 includes a flat body portion 191 and a porous body 192 provided on the upper surface side of the body portion 191. The porous body 192 has a diameter substantially the same as, for example, the wafer W to be processed, and abuts against the non-joining surface W _{N of the} wafer W to be processed. Further, as the porous body 192, for example, tantalum carbide is used. The porous body 192 is connected to a suction pipe (not shown), and the non-joining surface W _{N of the} processed wafer W is sucked from the suction pipe via the porous body 192, whereby the porous suction cup 190 can be adsorbed and held. The processed wafer W.

Below the porous chuck 190, a chuck driving portion 193 including a motor or the like is provided, for example. The perforated suction cup 190 can be rotated to a predetermined speed by the suction cup driving portion 193. Further, a suction driving source such as a cylinder is provided in the suction cup driving unit 193, and the multi-hole suction cup 190 can be arbitrarily moved up and down.

A cup 194 for receiving and recovering liquid which has been scattered or dropped from the wafer W to be processed is provided around the porous chuck 190. The lower surface of the cup body 194 is connected to a discharge pipe 195 for discharging the recovered liquid, and an exhaust pipe 196 for evacuating and exhausting the atmosphere in the cup body 194.

As shown in Fig. 6, a rail 200 extending in the Y direction (the horizontal direction in Fig. 6) is formed on the side of the cup body 194 in the negative X direction (the lower direction in Fig. 6). The rail 200 is formed outward from the side in the negative direction (left direction in FIG. 6) of the cup body 194 in the Y direction, and is outward in the positive direction (the right direction in FIG. 6) in the Y direction. The arm portion 201 is attached to the rail 200.

As shown in FIGS. 5 and 6, the arm portion 201 supports a cleaning liquid nozzle 202 that supplies a cleaning liquid, for example, an organic solvent of a solvent of the adhesive G to the wafer W to be processed. The arm portion 201 can be arbitrarily moved on the rail 200 by the nozzle driving portion 203 shown in FIG. Thereby, the cleaning liquid nozzle 202 can be moved from the standby portion 204 disposed outside the positive direction side of the cup body 194Y to the center portion of the processed wafer W in the cup body 194, and more on the processed wafer W. Moves in the radial direction of the wafer W to be processed. Further, the arm portion 201 can be arbitrarily moved up and down by the nozzle driving portion 203 to adjust the height of the cleaning liquid nozzle 202.

For example, a 2-fluid nozzle is used for the cleaning liquid nozzle 202. As shown in FIG. 5, the cleaning liquid nozzle 202 connects the supply pipe 210 to which the cleaning liquid nozzle 202 supplies the cleaning liquid. The supply pipe 210 is in communication with a cleaning liquid supply source 211 that internally stores the cleaning liquid. The supply pipe 210 is provided with a supply device group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting portion, and the like. The cleaning liquid nozzle 202 is connected to a supply pipe 213 for supplying an inert gas such as nitrogen to the cleaning liquid nozzle 202. The supply pipe 213 is in communication with a gas supply source 214 that internally stores an inert gas. The supply pipe 213 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting portion, and the like. Further, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 202, and the cleaning liquid nozzle 202 is supplied to the processed wafer W. In addition, in the following, the "cleaning liquid" may be referred to simply as a mixed cleaning liquid and an inert gas.

Further, a lift pin (not shown) for supporting and lifting the wafer W from below may be provided below the porous chuck 190. In the related case, the lift pin may protrude from the upper surface of the porous chuck 190 through a through hole (not shown) formed in the porous chuck 190. Further, instead of raising and lowering the multi-hole chuck 190, the lift pins can be moved up and down, and the wafer W to be processed can be transferred between the porous chucks 190 and the plurality of chucks 190.

The configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above. In the second cleaning device 33, as shown in Fig. 7, the porous suction cup 190 of the first cleaning device 31 is not provided, and instead, the rotary suction cup 220 is provided. The spin chuck 220 includes a horizontal upper surface on which a suction port (not shown) for supporting the wafer S is provided. The support wafer S can be adsorbed and held on the spin chuck 220 by suction from the suction port. The other configuration of the second cleaning device 33 is the same as that of the first cleaning device 31, and the description thereof will be omitted.

Further, in the second cleaning device 33, a back surface rinsing nozzle (not shown) that sprays the cleaning liquid toward the back surface of the support wafer S, that is, the non-joining surface S _N may be provided below the spin chuck 220. The non-joining surface S _N of the support wafer S and the outer peripheral portion of the support wafer S are cleaned by the cleaning liquid sprayed by the backside rinse nozzle.

Next, the configuration of the second transport device 32 will be described. As shown in FIG. 8, the second transport device 32 includes a white Nuo suction cup 230 that holds the wafer W to be processed. The white Nuo suction cup 230 can float the processed wafer W by ejecting air, and suction and hold the processed wafer W in a non-contact state. The white Nuo suction cup 230 is supported by the support arm 231. The support arm 231 is supported by the first drive unit 232. By the first driving portion 232, the support arm 231 can be arbitrarily rotated about the horizontal axis and expand and contract in the horizontal direction. A second drive unit 233 is provided below the first drive unit 232. By the second driving unit 233, the first driving unit 232 can arbitrarily rotate around the vertical axis and move up and down in the vertical direction.

Further, the third transport device 41 has the same configuration as that of the second transport device 32, and description thereof will be omitted. However, the second driving unit 233 of the third transport device 41 is attached to the transport path 40 shown in FIG. 1, and the third transport unit 41 is movable on the transport path 40.

In the above peeling system 1, the control unit 300 is provided as shown in FIG. The control unit 300 is, for example, a computer, and includes a program storage unit (not shown). A program for controlling the processed wafer W, the supporting wafer S, and the superposed wafer T in the peeling system 1 is stored in the program storage unit. Further, a program for controlling the driving system such as the above-described various processing devices or transport devices is stored in the program storage unit to realize a program for the peeling process described later in the peeling system 1. Moreover, the program is recorded on a computer-readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like, and can be read by a computer. This memory medium H is attached to the control unit 300.

Next, a method of peeling off the processed wafer W and the supporting wafer S by using the peeling system 1 configured as above will be described. Fig. 9 is a flow chart showing an example of a main procedure of the relevant stripping process.

First, a plurality of sheets of normal temperature, for example, a cassette C _T of a coincident wafer T of 23 ° C, an empty cassette C _{W ,} and an empty cassette C _{S are} placed on a predetermined cassette mounting plate of the feeding/receiving station 2 11. The superposed wafer T in the cassette C _T is taken out by the first transport device 20 and transported to the peeling device 30 of the peeling processing station 3. At this time, the wafer W to be processed is placed on the upper side, and the superposed wafer T is conveyed while the support wafer S is placed on the lower side.

The superposed wafer T fed to the peeling device 30 is adsorbed and held by the second holding portion 111. Thereafter, as shown in FIG. 10, the second holding portion 111 is raised by the second vertical moving portion 152 of the moving mechanism 150, and the first holding portion 110 and the second holding portion 111 are sandwiched and held by the wafer W. At this time, the first holding portion 110 adsorbs and holds the non-joining surface W _{N of the} wafer W to be processed, and the second holding portion 111 adsorbs and holds the non-joining surface S _N of the supporting wafer S. At this time, the temperature of the wafer W to be processed held by the first holding portion 110 is normal temperature, for example, 23 ° C, and the temperature of the supporting wafer S held by the second holding portion 111 is also normal temperature, for example, 23 ° C. Further, in the subsequent period in which the wafer W and the supporting wafer S are peeled off from the peeling device 30, the temperatures of the processed wafer W and the supporting wafer S are maintained at normal temperatures, respectively.

Thereafter, as shown in FIG. 11, the first vertical moving portion 151 of the moving mechanism 150 moves only the outer peripheral portion of the second holding portion 111 in a circular shape downward. In other words, when the outer peripheral portion of the second holding portion 111 is moved vertically downward by the cylinder 160, the central portion of the second holding portion 111 is supported by the support column 161, and the position of the central portion of the second holding portion 111 in the vertical direction is not Variety.

In the case where the support wafer S held by the second holding portion 111 is continuously peeled off from the outer peripheral portion toward the center portion from the wafer W to be processed held by the first holding portion 110. Here, since the electronic circuit is formed on the bonding surface W _{J of the} wafer W to be processed, when the wafer W to be processed and the supporting wafer S are to be peeled off, a large load is applied to the bonding surfaces W _J and S _J . The electronic circuit on the joint surface W _J is damaged. In this regard, in the present embodiment, since the support wafer S is continuously peeled from the outer peripheral portion toward the central portion from the wafer W to be processed, a large load is not applied to the joint faces W _J and S _J . Therefore, damage to the electronic circuit can be suppressed.

Thereafter, in a state in which only the center portion of the wafer W to be processed is bonded to the center portion of the support wafer S, as shown in FIG. 12, the second holding portion 111 is entirely vertically lowered by the second vertical moving portion 152. mobile. Further, the support wafer S is peeled off from the wafer W to be processed while the peripheral portion of the support wafer S is bent downward vertically. Then, as shown in FIG. 13 , the second holding portion 111 and the outer peripheral portion of the support wafer S are vertically moved upward by the first vertical moving portion 151 to planarize the second holding portion 111 and the support wafer S. In this manner, the wafer W to be processed held by the first holding portion 110 and the supporting wafer S held by the second holding portion 111 are peeled off (procedure A1 of FIG. 9).

Thereafter, the processed wafer W that has been peeled off by the peeling device 30 is transported to the first cleaning device 31 by the second transport device 32. Here, a method of transporting the processed wafer W by the second transport device 32 will be described.

As shown in FIG. 14, the support arm 231 is extended, and the whitenuuli chuck 230 is placed under the wafer W to be held by the first holding portion 110. Thereafter, the white Nucleus suction cup 230 is raised to stop the suction of the wafer W to be processed by the suction pipe 123 in the first holding portion 110. Further, the wafer W to be processed is transferred from the first holding portion 110 toward the white Nuo suction cup 230. At this time, the bonding surface W _{J of the} processed wafer W is held by the white Nuo suction cup 230, but the white Nuo suction cup 230 holds the processed wafer W in a non-contact state, so that the processed wafer W is bonded to the surface W _J The electronic circuit will not be damaged.

Next, as shown in Fig. 15, the support arm 231 is rotated to move the white Nuo suction cup 230 above the multi-hole chuck 190 of the first cleaning device 31, and the white Nuo suction cup 230 is reversed so that the wafer W to be processed faces downward. At this time, the perforated suction cup 190 is raised above the cup 194 and allowed to stand by. Thereafter, the processed wafer W is transferred from the white Snoop chuck 230 toward the multi-hole chuck 190 and adsorbed and held by it.

After the porous chuck 190 adsorbs and holds the wafer W to be processed, the porous chuck 190 is lowered to a predetermined position. Next, the cleaning liquid nozzle 202 of the standby portion 204 is moved by the arm portion 201 to the upper portion of the center portion of the wafer W to be processed. Thereafter, the wafer W to be processed is rotated by the porous chuck 190, and the cleaning liquid is supplied from the cleaning liquid nozzle 202 to the bonding surface W _{J of the} wafer W to be processed. By the centrifugal force of the cleaning liquid is supplied via diffusion bonding to the treated wafer W W _J comprehensive cleaning the joint surface of the treated wafer W W _J (FIG. 9 of the program A2).

Here, the plurality of coincident wafers T fed to the delivery station 2 are inspected in advance, and the superposed wafer T including the normal processed wafer W and the wafer W containing the defective wafer are identified. Coincident wafer T.

After the process A2 cleans the bonding surface W _J of the normal processed wafer W from which the normal overlapping wafer T is peeled off, the third transfer device 41 transports the normal processed wafer T from the normal processed wafer T. Wafer W to post-processing station 4. In addition, the conveyance of the wafer W to be processed by the third transport device 41 is substantially the same as the transport of the wafer W to be processed by the second transport device 32, and description thereof will be omitted. Thereafter, the post-processing station 4 performs predetermined post processing on the wafer W to be processed (procedure A3 of FIG. 9). In this way, the processed wafer W is commercialized.

On the other hand, after the program A2 cleans the bonding surface W _J of the defective wafer W which has been peeled off from the defective wafer T, the self-defective coincident wafer T is transported by the first transport device 20 The defective wafer W to be processed is peeled off to be fed to the delivery station 2. Thereafter, the defective processed wafer W is sent out from the feeding/receiving station 2 to the outside and is collected (procedure A4 of Fig. 9).

During the execution of the above-described procedures A2 to A4 for the wafer W to be processed, the support wafer S peeled off by the peeling device 30 is transported to the second cleaning device 33 by the first transport device 20. Moreover, the bonding surface S _{J of the} support wafer S is cleaned by the second cleaning device 33 (the program A5 of FIG. 9). Further, the cleaning of the support wafer S in the second cleaning device 33 is the same as the cleaning of the wafer W to be processed in the first cleaning device 31, and description thereof will be omitted.

Thereafter, the first transfer device 20 transports the bonded wafer S to which the bonding surface S _J is cleaned to the feeding/receiving station 2. Thereafter, the support wafer S is sent out from the feed-in/out station 2 to the outside and is collected (procedure A6 of Fig. 9). In this way, the series of stripping processes of the processed wafer W and the supporting wafer S are ended.

According to the peeling device 30 of the above embodiment, the outer peripheral portion of the second holding portion 111 can be moved vertically downward, and the normal temperature supporting wafer S held by the second holding portion 111 can be held from the outer peripheral portion toward the central portion by the first holding. The wafer W to be processed which is held at the normal temperature by the portion 110 is continuously peeled off. Since the support wafer S is continuously peeled from the outer peripheral portion toward the center portion from the processed wafer W in this manner, the processed wafer W and the support wafer S can be easily peeled off with a small load. Therefore, the electronic circuit on the processed wafer W can appropriately peel off the processed wafer W and the supporting wafer S without being damaged. Moreover, the time required for the stripping process can be shortened more than before. Therefore, according to the present embodiment, the peeling process of the wafer W to be processed and the support wafer S can be appropriately and efficiently performed.

Further, since the moving mechanism 150 includes the first vertical moving portion 151 and the second vertical moving portion 152, the peeling process of the processed wafer W and the supporting wafer S can be performed stepwise. In other words, the support wafer S can be continuously peeled off from the processed wafer W from the outer peripheral portion toward the center portion by the first vertical moving portion 151, and the processed wafer can be completely peeled off by the second vertical moving portion 152. W and support wafer S. By performing the stripping process in stages, the processed wafer W and the supporting wafer S can be uniformly peeled off. Further, since the first vertical moving portion 151 moves the outer peripheral portion of the second holding portion 111 in a circular shape downward and downward, the processed wafer W and the supporting wafer S can be more uniformly peeled off.

According to the peeling system 1 of the above embodiment, after the peeling device 30 peels the superposed wafer T into the processed wafer W and the supporting wafer S, the peeled processed wafer W is cleaned by the first cleaning device 31, and The peeled support wafer S is cleaned by the second cleaning device 33. According to this embodiment, it is possible to efficiently perform the peeling process from the peeling of the processed wafer W and the supporting wafer S to the cleaning of the processed wafer W and the cleaning of the supporting wafer S in one peeling system 1 . The cleaning of the wafer W to be processed and the cleaning of the supporting wafer S can be performed in parallel between the first cleaning device 31 and the second cleaning device 33, respectively. Further, during the process in which the peeling device 30 peels off the processed wafer W and the supporting wafer S, the first cleaning device 31 and the second cleaning device 33 may process the additional processed wafer W and the supporting wafer S. Therefore, the processed wafer W and the supporting wafer S can be efficiently peeled off, and the processing capability of the peeling treatment can be improved.

And in such a series of processes, the stripping of the processed wafer W and the supporting wafer S is performed. After processing to the processed wafer W, the processing power of the wafer processing can be further improved.

In the peeling device 30 of the above-described embodiment, the first vertical drive unit 151 is configured to hold the second holding portion 111 and to move only the outer peripheral portion of the second holding portion 111 in the vertical direction, and various configurations can be adopted. For example, the cylinder 160 and the support post 161 of the first vertical drive unit 151 may not be included, and instead, the first vertical drive unit 310 may include the bellows 311 and the support post 312 as shown in FIG. 16 .

The bellows 311 is constituted by a bellows made of, for example, stainless steel which is arbitrarily expandable and contractible in the vertical direction. The bellows 311 holds the second holding portion 111 with its upper surface, and its lower surface is supported by the support plate 162. The bellows 311 is connected to a fluid supply pipe 313 that supplies a fluid, such as compressed air, to the inside of the bellows. The fluid supply pipe 313 is connected to a fluid supply source (not shown). Further, by supplying fluid to the bellows 311 from the fluid supply pipe 313, the bellows 311 is elongated.

The support post 312 is disposed inside the bellows 311. The support post 312 supports the central portion of the second holding portion 111.

Further, the other configuration of the peeling device 30 is the same as that of the peeling device 30 of the above-described embodiment, and description thereof will be omitted.

In the case of the first vertical movement portion 310, only the outer peripheral portion of the second holding portion 111 is moved vertically downward in a circular shape as shown in FIG. In other words, when the outer peripheral portion of the second holding portion 111 is moved vertically downward by the bellows 311, the central portion of the second holding portion 111 is supported by the support post 312, and the position of the central portion of the second holding portion 111 in the vertical direction is not Variety. In this manner, the support wafer S held by the second holding portion 111 can be continuously peeled off from the outer peripheral portion toward the center portion from the wafer W to be processed held by the first holding portion 110. Therefore, in the present embodiment, the wafer W to be processed and the support wafer S can be appropriately and uniformly peeled off.

The peeling device 30 of the above embodiment may include a rotating mechanism 320 that rotates the first holding portion 110 as shown in FIG. 18 . The rotation mechanism 320 is provided between the first holding portion 110 and the support plate 130. The rotation mechanism 320 includes a motor (not shown) for rotating the first holding portion 110. Peeling The other configuration of the separation device 30 is the same as that of the separation device 30 of the above-described embodiment, and thus the description thereof is omitted.

In the case of the above-described procedure A1, after the first holding portion 110 and the second holding portion 111 hold the overlapping wafer T, the first holding portion 110 is rotated by the rotating mechanism 320. At this time, the rotational speed of the first holding portion 110 is, for example, 1 mm/sec to 10 mm/sec. Thereafter, the outer peripheral portion of the second holding portion 111 is moved vertically downward, and the support wafer S is continuously peeled off from the outer peripheral portion toward the center portion from the processed wafer W, and then the entire second holding portion 111 is vertically oriented. Moving downward, the processed wafer W and the supporting wafer S are peeled off. Further, the method of peeling off the wafer W to be processed and the support wafer S is the same as the method described in the above embodiment, and thus the description thereof is omitted.

According to this embodiment, since the first holding portion 110 is rotated, the equilibrium state between the processed wafer W and the supporting wafer S by the adhesive G can be collapsed. In this way, the outer peripheral portion of the second holding portion 111 can be smoothly moved, and the outer peripheral portion of the support wafer S can be smoothly peeled off from the wafer W to be processed. Therefore, the peeling process of the wafer W to be processed and the support wafer S can be performed more efficiently.

Further, in the above-described embodiment, the rotation mechanism 320 rotates the first holding portion 110, but may not include the rotation mechanism 320, and instead rotates the second holding portion 111 (not shown). Further, both the rotating mechanism 320 and the rotating mechanism that rotates the second holding portion may be provided.

As shown in FIG. 19, the peeling device 30 of the above embodiment may further include a solvent for supplying the adhesive G to the outer peripheral adhesive G of the superposed wafer T held by the first holding portion 110 and the second holding portion 111. A solvent supply unit 330 of an organic solvent. The solvent supply unit 330 is provided in a ring shape, and surrounds the outer peripheral portion of the superposed wafer T. Further, a supply port 331 for supplying a plurality of organic solvents is formed in the solvent supply unit 330. Further, the solvent supply unit 330 is not limited to the shape of the embodiment, and various shapes for supplying an organic solvent can be employed. For example, a cup-shaped person surrounding the outer peripheral portion of the superposed wafer T may be used as the solvent supply unit 330. The other configuration of the peeling device 30 is the same as that of the peeling device 30 of the above-described embodiment, and thus the description thereof will be omitted.

In the case of the above, the first holding portion 110 and the second holding portion 111 are held in the above-described program A1. After the wafer T is superposed, the organic solvent is supplied from the solvent supply unit 330 to the adhesive G exposed on the outer peripheral portion of the superposed wafer T. Thus, the adhesive G which overlaps the outer peripheral portion of the wafer T is dissolved by the organic solvent. Therefore, the load when the second holding portion 111 is moved vertically downward can be reduced. Further, the outer peripheral portion of the second holding portion 111 is moved vertically downward, and the support wafer S is continuously peeled off from the outer peripheral portion toward the center portion from the processed wafer W, and then the entire second holding portion 111 is vertically downward. Moving, stripping the processed wafer W and the supporting wafer S.

According to this embodiment, the load when the second holding portion 111 is moved vertically downward can be further reduced in the program A1, so that the processed wafer W and the supporting wafer S can be easily peeled off with a smaller load. Therefore, the electronic circuit on the processed wafer W can appropriately peel off the processed wafer W and the supporting wafer S without being damaged. Moreover, the processed wafer W and the supporting wafer S can be peeled off more quickly.

In the above embodiment, the first vertical moving portion 151 of the moving mechanism 150 moves the outer peripheral portion of the second holding portion 111 in the vertical direction in an annular shape. However, the one end portion of the outer peripheral portion of the second holding portion 111 may be provided. Move in the vertical direction. Further, the support wafer S may be peeled off from the wafer W to be processed from one end portion of the outer peripheral portion toward the other end portion. In the related case, the processed wafer W and the supporting wafer S can be continuously peeled off, so that the processed wafer W and the supporting wafer S can be appropriately and uniformly peeled off.

Further, in the above embodiment, the processed wafer W and the supporting wafer S are peeled off while the wafer W to be processed is disposed on the upper side and the supporting wafer S is disposed on the lower side, but the processed wafer W is processed. The opposite of the support wafer S above and below. In the related case, the moving mechanism 150 can also move the second holding portion 111 vertically upward.

In the second transport device 32 of the above embodiment, a plurality of supply ports (not shown) for supplying the cleaning liquid may be formed on the surface of the Bainuuli chuck 230. In the case where the wafer W is transferred from the white Snoop chuck 230 to the porous chuck 190 of the first cleaning device 31, the cleaning liquid can be supplied to the bonding surface W _{J of the} wafer W to be processed from the whiteur suction cup 230, and the cleaning liquid can be cleaned. The joint surface W _J also cleans the white Nuo suction cup 230 itself. Thus, the cleaning time of the wafer W to be processed in the first cleaning device 31 can be shortened, and the processing capability of the peeling process can be further improved. Moreover, the white Nucleus chuck 230 can also be cleaned, so that the next processed wafer W can be appropriately transported.

In the above embodiment, the third transport device 41 includes the white Nuo suction cup 230. However, the white Nuo suction cup 230 may not be included, and a porous suction cup (not shown) may be used instead. In the related case, the thinned wafer W to be processed can be appropriately adsorbed and held by the porous chuck.

In the above embodiment, the two fluid nozzles are used for the cleaning liquid nozzles 202 of the first cleaning device 31 and the second cleaning device 33. However, the cleaning liquid nozzles 202 can be used in various forms without being limited by the present embodiment. For example, the cleaning liquid nozzle 202 may be a nozzle body that integrates a nozzle that supplies the cleaning liquid with a nozzle that supplies the inert gas, or a spray nozzle, an injection nozzle, an ultrasonic oscillation nozzle, or the like. In order to improve the processing ability of the cleaning treatment, a cleaning liquid heated to, for example, 80 ° C may be supplied.

Further, in addition to the cleaning liquid nozzle 202, the first cleaning device 31 and the second cleaning device 33 may be provided with a nozzle for supplying IPA (isopropyl alcohol). In the related case, after the processed wafer W or the supporting wafer S is cleaned by the cleaning liquid from the cleaning liquid nozzle 202, the cleaning liquid on the processed wafer W or the supporting wafer S is replaced with IPA. In this way, the bonding faces W _J , S _{J of the} wafer W to be processed or the supporting wafer S can be more reliably cleaned.

In the method of peeling off the wafer W to be processed and the support wafer S in the above embodiment, for example, the wafer W and the wafer wafer W are strongly adhered and bonded to each other by the adhesive G at the peripheral portion of the support wafer S. It is particularly useful when peeling off the processed wafer W and the supporting wafer S.

The coincident wafer T may be bonded only to the outer periphery of the wafer W to be processed and bonded. At this time, for example, the outer peripheral portion of the surface of the support wafer S is adhered to and bonded to the adhesive G on the wafer W to be processed, so that the center portion of the surface of the support wafer S is not bonded to the adhesive G. Alternatively, the coincident wafer T may be bonded and bonded such that the adhesion between the processed wafer W and the outer peripheral portion of the support wafer S is greater than the adhesion of the central portion. At this time, for example, an adhesive having a strong adhesive force is used for the peripheral portion of the wafer W to be processed and the support wafer S, and an adhesive having a weak adhesive force is used at the center portion.

In the related case, in the above procedure A1, the second holding portion 111 can be further reduced to be vertically downward. The load when moving. Therefore, the processed wafer W and the supporting wafer S can be easily peeled off with a smaller load. Moreover, the processed wafer W and the supporting wafer S can be peeled off more quickly.

Further, in the above embodiment, the case where the processed wafer W is post-processed in the post-processing station 4 for productization has been described, but the present invention is also applicable to, for example, the one used in the 3-dimensional integration technique. Handling the wafer from the support wafer. Further, in recent years, the three-dimensional integration technology has been a technique in which a semiconductor device is required to be highly dense in the prior art, and the high-density complex semiconductor element is not placed in a horizontal plane, and the complex semiconductor element is stacked in three dimensions instead. In the three-dimensional integration technology, the stacked wafer to be processed is also required to be thinned, and the processed wafer is bonded to the support wafer and subjected to predetermined processing.

Although the preferred embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited by the related examples. It is to be understood that, as long as it is a person skilled in the art, various modifications and modifications are conceivable within the scope of the invention described in the claims.

The present invention is not limited to this embodiment and various aspects can be employed. The present invention is also applicable to other substrates such as an FPD (flat display) other than a substrate-based wafer, and a reticle for a photomask.

G‧‧‧Adhesive

S‧‧‧Support wafer

T‧‧‧ coincident wafer

W‧‧‧Processed Wafer

30‧‧‧ peeling device

100‧‧‧Processing container

101‧‧‧ suction port

102‧‧‧Negative pressure generating device

103‧‧‧ suction pipe

110‧‧‧1st holding unit

111‧‧‧2nd holding unit

120‧‧‧ Body Department

121‧‧‧Porous body

122‧‧‧Sucking space

123, 140‧‧ ‧ suction tube

130‧‧‧Support board

150‧‧‧Mobile agencies

151‧‧‧1st vertical movement

152‧‧‧2nd vertical movement

153‧‧‧Horizontal Moving Department

160‧‧‧Cylinder

161‧‧‧Support column

162‧‧‧Support board

170‧‧‧ Drive Department

171‧‧‧Support components

Claims (15)

A peeling device that peels a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent into a substrate to be processed and a supporting substrate, comprising: a first holding portion that holds the substrate to be processed at a normal temperature a second holding portion that holds the support substrate at a normal temperature; and a moving mechanism that holds the outer peripheral portion of the second holding portion and moves it in the vertical direction, and the normal temperature supporting substrate held by the second holding portion The outer peripheral portion is continuously peeled off from the substrate to be processed at a normal temperature held by the first holding portion toward the center portion, and the moving mechanism moves the outer peripheral portion of the second holding portion in a circular shape in a vertical direction. The support substrate held by the second holding portion is continuously peeled off from the outer peripheral portion toward the center portion from the substrate to be processed held by the first holding portion. The peeling device according to claim 1, wherein the first holding portion is disposed above the second holding portion, and the moving mechanism moves the second holding portion vertically downward. The peeling device of claim 2, wherein the peeling device includes at least a rotating mechanism that rotates the first holding portion or the second holding portion. The peeling device according to claim 1, wherein the moving mechanism includes: a first moving portion that holds the second holding portion and moves only the outer peripheral portion of the second holding portion in a vertical direction; and a second movement The first moving portion is held, and the first moving portion and the second holding portion are moved in the vertical direction. The peeling device of claim 4, wherein the first moving portion includes: a plurality of cylinders that move the outer peripheral portion of the second holding portion in a vertical direction; and a support column that supports the center of the second holding portion When the plurality of cylinders move the outer peripheral portion of the second holding portion in the vertical direction, the position of the central portion of the second holding portion in the vertical direction does not change. The stripping device of claim 4, wherein the first moving portion comprises: a bellows holding the second holding portion and arbitrarily expanding and contracting in a vertical direction; and a support column disposed inside the bellows and supporting a central portion of the second holding portion, wherein the bellows is contracted to move in a vertical direction When the outer periphery of the second holding portion is located, the position of the central portion of the second holding portion does not change in the vertical direction. The peeling device according to claim 1, wherein the solvent supply unit that supplies the solvent of the adhesive to the adhesive of the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion is included. A peeling system comprising: a peeling device according to claim 1 of the patent application, comprising: a peeling treatment station having: the peeling device; a first cleaning device, a substrate to be processed which is peeled off by the peeling device; and a second cleaning device Cleaning the support substrate that has been peeled off by the peeling device; feeding the delivery station, feeding the substrate to be processed, the support substrate or the superposed substrate with respect to the peeling processing station; and transporting the device to and from the peeling processing station Between the stations, the substrate to be processed, the support substrate, or the superposed substrate are transported. The stripping system of claim 8 wherein: the interface station comprises a mezzanine station that is transported between the processing station after the predetermined post-processing of the substrate to be processed that has been stripped at the stripping station Process the substrate. A peeling method for peeling a superposed substrate obtained by bonding a substrate to be processed and a support substrate by a bonding agent into a substrate to be processed and a supporting substrate, wherein the peeling device includes: a first holding portion; The substrate to be processed is held at a normal temperature; the second holding portion holds the support substrate at a normal temperature; and the moving mechanism moves the outer peripheral portion of the second holding portion in the vertical direction to support the second holding portion. The substrate is continuously peeled off from the outer peripheral portion toward the central portion from the substrate to be processed held by the first holding portion; and the peeling method includes a first program for moving the outer peripheral portion of the second holding portion in the vertical direction The support substrate at normal temperature held by the second holding portion is fixed from the outer peripheral portion toward the central portion from the first holding portion. The substrate to be processed which is kept at room temperature is continuously peeled off; and the second program is thereafter, the entire second holding portion is moved in the vertical direction, and the substrate to be processed and the support substrate are peeled off. The peeling method according to claim 10, wherein in the first program, the outer peripheral portion of the second holding portion is moved in a circular shape in a vertical direction, and the support substrate is guided from the outer peripheral portion toward the central portion from the substrate to be processed. Peel off continuously. The peeling method of claim 10 or 11, wherein the first holding portion is disposed above the second holding portion, and the second holding portion is moved vertically downward in the first program and the second program . The peeling method according to claim 12, wherein the peeling device includes at least a rotating mechanism that rotates the first holding portion or the second holding portion, and at least the first holding portion or the first holding portion is started in the first program After the second holding portion is rotated, the outer peripheral portion of the second holding portion is moved in the vertical direction, and the support substrate is continuously peeled off from the substrate to be processed from the outer peripheral portion toward the center portion. The peeling method according to claim 10, wherein in the first step, the adhesive agent is supplied to the outer peripheral portion of the superposed substrate held by the first holding portion and the second holding portion. Solvent. A readable computer memory medium storing a program for operating on a control unit computer that controls the stripping device in order to perform a peeling method as in claim 11 of the patent application by a peeling device.