JP6863220B2 - Wafer affixing device to single-sided polishing device, and wafer affixing method to single-sided polishing device - Google Patents

Wafer affixing device to single-sided polishing device, and wafer affixing method to single-sided polishing device Download PDF

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JP6863220B2
JP6863220B2 JP2017200286A JP2017200286A JP6863220B2 JP 6863220 B2 JP6863220 B2 JP 6863220B2 JP 2017200286 A JP2017200286 A JP 2017200286A JP 2017200286 A JP2017200286 A JP 2017200286A JP 6863220 B2 JP6863220 B2 JP 6863220B2
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wafer
sided polishing
water
affixing
discharge tank
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JP2019072796A (en
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山本　勝利
勝利 山本
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Sumco Corp
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Sumco Corp
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Priority to JP2017200286A priority Critical patent/JP6863220B2/en
Priority to TW107130773A priority patent/TWI711508B/en
Priority to KR1020207013615A priority patent/KR102370447B1/en
Priority to CN201880067566.2A priority patent/CN111295267B/en
Priority to PCT/JP2018/037125 priority patent/WO2019078009A1/en
Priority to DE112018004568.4T priority patent/DE112018004568T5/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Description

本発明は、片面研磨装置へのウェーハ貼付装置、および片面研磨装置へのウェーハ貼付方法に関する。 The present invention relates to a wafer affixing apparatus to a single-sided polishing apparatus and a wafer affixing method to a single-sided polishing apparatus.

従来、片面研磨装置へのウェーハ貼付方法としては、吸着テープを用いたもの、真空吸着を利用したものが知られている（たとえば、特許文献１、特許文献２参照）。
特許文献１には、水の表面張力によりウェーハを保持する研磨ヘッドを備え、研磨ヘッドに孔部を形成して、真空吸引を利用して研磨ヘッドの保持面にウェーハを貼り付ける技術が開示されている。
また、特許文献２には、研磨ヘッドの下面に両面粘着シートを貼り付け、水の表面張力および吸着シートの粘着性により、基板を吸着シートに密着させて保持する技術が開示されている。 Conventionally, as a method of attaching a wafer to a single-sided polishing apparatus, a method using a suction tape and a method using vacuum suction are known (see, for example, Patent Document 1 and Patent Document 2).
Patent Document 1 discloses a technique in which a polishing head that holds a wafer by the surface tension of water is provided, a hole is formed in the polishing head, and the wafer is attached to the holding surface of the polishing head by using vacuum suction. ing.
Further, Patent Document 2 discloses a technique in which a double-sided adhesive sheet is attached to the lower surface of a polishing head, and the substrate is held in close contact with the adsorption sheet by the surface tension of water and the adhesiveness of the adsorption sheet.

特開２００７−１０３７０７号公報JP-A-2007-103707 特開２００８−８０４４３号公報Japanese Unexamined Patent Publication No. 2008-80443

しかしながら、前記特許文献１に記載の技術では、研磨ヘッドに孔を開けなければならず、この孔から重金属を含んだ流体が逆流し、ウェーハが汚染する問題があった。また、異物が入出する可能性もある。
また、前記特許文献２に記載の技術では、治具等を用いて研磨ヘッドの下面にウェーハを押さえつけなければならず、押さえつけの際、ウェーハの表面に接触痕が残ることや、パッド上の異物などでウェーハの表面が傷つけられることがある。
この場合、その後の研磨処理により接触痕、傷を除去することも考えられるが、研磨取代が少ない場合は、接触痕、傷を除去することができないという課題がある。 However, in the technique described in Patent Document 1, it is necessary to make a hole in the polishing head, and there is a problem that a fluid containing a heavy metal flows back from the hole and the wafer is contaminated. In addition, foreign matter may enter and exit.
Further, in the technique described in Patent Document 2, the wafer must be pressed against the lower surface of the polishing head by using a jig or the like, and at the time of pressing, contact marks remain on the surface of the wafer and foreign matter on the pad. The surface of the wafer may be damaged by such factors.
In this case, it is conceivable to remove the contact marks and scratches by the subsequent polishing treatment, but there is a problem that the contact marks and scratches cannot be removed when the polishing allowance is small.

本発明の目的は、ウェーハ表面に接触痕や傷が入らず、表面品質が悪化することのない片面研磨装置へのウェーハ貼付装置、および片面研磨装置へのウェーハ貼付方法を提供することにある。 An object of the present invention is to provide a wafer affixing apparatus to a single-sided polishing apparatus, which does not cause contact marks or scratches on the wafer surface and does not deteriorate the surface quality, and a wafer affixing method to the single-sided polishing apparatus.

本発明の片面研磨装置へのウェーハ貼付装置は、片面研磨装置にウェーハを水の表面張力により貼り付ける片面研磨装置へのウェーハ貼付装置であって、前記ウェーハの外周縁で当接し、前記ウェーハを支持する仮受台と、前記仮受台上に設けられ、前記ウェーハに水を吐出する水吐出槽とを備えていることを特徴とする。 The wafer affixing device to a single-sided polishing device of the present invention is a wafer affixing device to a single-sided polishing device that attaches a wafer to a single-sided polishing device by surface tension of water, and abuts the wafer at the outer peripheral edge of the wafer. It is characterized by including a temporary cradle for supporting the wafer and a water discharge tank provided on the temporary cradle for discharging water to the wafer.

この発明によれば、仮受台にウェーハを支持させた状態で片面研磨装置のウェーハの貼付面に接近させ、水吐出槽から水を吐出することにより、ウェーハを貼付面に貼り付けることができる。ウェーハを貼付面に貼り付けるに際して、水圧を利用して貼り付けることができるため、ウェーハに貼り付け時の接触痕や、貼り付け時の傷を生じさせることがなく、ウェーハの表面品質が悪化することがない。 According to the present invention, the wafer can be attached to the attachment surface by approaching the attachment surface of the wafer of the single-side polishing apparatus with the wafer supported by the temporary cradle and discharging water from the water discharge tank. .. When the wafer is attached to the attachment surface, it can be attached using water pressure, so that contact marks during attachment and scratches during attachment do not occur, and the surface quality of the wafer deteriorates. Never.

本発明では、前記水吐出槽は、前記仮受台に支持されたウェーハの中央下方に位置する凹部と、前記凹部の底部に形成され、前記ウェーハの中央に水を吐出する吐出部とを備えているのが好ましい。
この発明によれば、吐出部が凹部の中央に水を吐出し、ウェーハを凹部全体の水圧で押すようになっているので、ウェーハを片面研磨装置の貼付面に押しつける力を、ウェーハの中央部において、面で作用させることができる。片面研磨装置の貼付面では、貼付面とウェーハとの間に供給される水を、作用する水圧の小さいウェーハの外周から排出できるため、片面研磨装置の貼付面にウェーハを確実に貼り付けることができる。 In the present invention, the water discharge tank includes a recess located below the center of the wafer supported by the temporary cradle, and a discharge portion formed at the bottom of the recess and discharging water to the center of the wafer. Is preferable.
According to the present invention, since the discharge portion discharges water to the center of the recess and pushes the wafer with the water pressure of the entire recess, the force of pressing the wafer against the sticking surface of the single-sided polishing device is applied to the center portion of the wafer. Can act on the surface. On the sticking surface of the single-sided polishing machine, the water supplied between the sticking surface and the wafer can be discharged from the outer circumference of the wafer where the water pressure acting is small, so that the wafer can be reliably stuck on the sticking surface of the single-sided polishing machine. it can.

本発明では、前記仮受台を前記片面研磨装置の貼付面に接近、離間させる第１昇降装置と、前記水吐出槽を、前記仮受台に支持されたウェーハに接近、離間させる第２昇降装置とを備えているのが好ましい。
この発明によれば、第１昇降装置を利用して仮受台を片面研磨装置の貼付面に接近させ、貼付面とウェーハの間に所定の隙間を有して維持することができる。そして、第２昇降装置を利用して、凹部に水を吐出させながら水吐出槽をウェーハに所望の状態に接近させることにより、ウェーハを片面研磨装置の貼付面に貼り付けることができる。 In the present invention, the first elevating device for approaching and separating the temporary pedestal from the sticking surface of the single-sided polishing device and the second elevating device for approaching and separating the water discharge tank from the wafer supported by the temporary pedestal. It is preferable to have a device.
According to the present invention, the temporary cradle can be brought close to the sticking surface of the single-sided polishing device by using the first elevating device, and can be maintained with a predetermined gap between the sticking surface and the wafer. Then, by using the second elevating device to bring the water discharge tank closer to the wafer in a desired state while discharging water into the recess, the wafer can be attached to the attachment surface of the single-sided polishing apparatus.

本発明の片面研磨装置へのウェーハ貼付方法は、片面研磨装置にウェーハを水の表面張力により貼り付ける片面研磨装置へのウェーハ貼付方法であって、仮受台に前記ウェーハの外周縁を支持させる工程と、前記仮受台を前記片面研磨装置の貼付面に、前記ウェーハと所定の隙間を持たせて接近させる工程と、前記ウェーハの中央下方から水を吐出しながら、前記ウェーハを前記片面研磨装置の貼付面に押しつける工程とを実施することを特徴とする。
この発明によっても、前述した作用および効果と同様の作用および効果を享受できる。 The wafer affixing method to the single-sided polishing apparatus of the present invention is a wafer affixing method to a single-sided polishing apparatus in which a wafer is attached to the single-sided polishing apparatus by the surface tension of water, and a temporary pedestal supports the outer peripheral edge of the wafer. A step of bringing the temporary cradle closer to the sticking surface of the single-sided polishing device with a predetermined gap from the wafer, and a step of discharging water from the lower center of the wafer to polish the wafer on the single side. It is characterized by carrying out a step of pressing against the sticking surface of the device.
Also by this invention, the same action and effect as the above-mentioned action and effect can be enjoyed.

本発明の実施形態に係る片面研磨装置へのウェーハ貼付装置の構造を示す断面図。The cross-sectional view which shows the structure of the wafer sticking apparatus to the single-sided polishing apparatus which concerns on embodiment of this invention. 前記実施形態におけるウェーハ貼付装置の構造を示す平面図。The plan view which shows the structure of the wafer sticking apparatus in the said embodiment. 前記実施形態におけるウェーハの位置決め装置の構造を示す側面図。The side view which shows the structure of the wafer positioning apparatus in said embodiment. 前記実施形態におけるウェーハの位置決め装置の構造を示す平面図。The plan view which shows the structure of the wafer positioning apparatus in said embodiment. 前記実施形態における研磨装置へのウェーハ貼付方法を示すフローチャート。The flowchart which shows the wafer sticking method to the polishing apparatus in the said embodiment. 前記実施形態における作用を説明するための断面図。FIG. 5 is a cross-sectional view for explaining the operation in the embodiment. 前記実施形態における作用を説明するための断面図。FIG. 5 is a cross-sectional view for explaining the operation in the embodiment.

図１には、本発明の実施形態に係る片面研磨装置１およびウェーハ貼付装置２が示されている。
［１］片面研磨装置１の構造
片面研磨装置１は、ヘッド回転軸１１、研磨ヘッド１２、バックパッド１３、リテーナー１４、および図示しない定盤を備える。
ヘッド回転軸１１は、図示を略したが、軸状部材から構成され、モータ等の回転駆動源の回転軸に接続され、研磨ヘッド１２を回転させる。
研磨ヘッド１２は、ヘッド回転軸１１の下端に設けられ、ヘッド回転軸１１の回転中心を中心とする円形の厚肉板状体から構成される。この研磨ヘッド１２は、水の表面張力によりウェーハＷを保持する。 FIG. 1 shows a single-sided polishing apparatus 1 and a wafer attaching apparatus 2 according to an embodiment of the present invention.
[1] Structure of Single-sided Polishing Device 1 The single-sided polishing device 1 includes a head rotating shaft 11, a polishing head 12, a back pad 13, a retainer 14, and a surface plate (not shown).
Although not shown, the head rotation shaft 11 is composed of a shaft-shaped member, is connected to a rotation shaft of a rotation drive source such as a motor, and rotates the polishing head 12.
The polishing head 12 is provided at the lower end of the head rotation shaft 11, and is composed of a circular thick plate-like body centered on the rotation center of the head rotation shaft 11. The polishing head 12 holds the wafer W by the surface tension of water.

バックパッド１３は、研磨ヘッド１２の下面に設けられ、研磨ヘッド１２と同径の円形板状体である。このバックパッド１３は、多孔質樹脂材により構成され、水を含むことができるようになっている。
リテーナー１４は、バックパッド１３の下面に設けられるリング状部材から形成され、ウェーハＷがバックパッド１３と研磨パッドの隙間から外れないように保持している。また、リテーナー１４のリング内周径は、ウェーハＷの外周径よりも若干大きく形成され、研磨パッドにウェーハＷを押さえつけて研磨する際、リテーナー１４の部分で研磨パッドを押さえつけ、ウェーハＷの沈み込みによる研磨時のウェーハＷの縁だれの発生を防止することもできる。
定盤は、回転自在に支持され、研磨ヘッド１２の回転方向と同方向または逆方向に回転する。定盤上には、研磨パッドが貼り付けられ、ウェーハＷの下面が所定の力で押圧されることにより、ウェーハＷの研磨が行われる。 The back pad 13 is provided on the lower surface of the polishing head 12, and is a circular plate-like body having the same diameter as the polishing head 12. The back pad 13 is made of a porous resin material and can contain water.
The retainer 14 is formed of a ring-shaped member provided on the lower surface of the back pad 13, and holds the wafer W so as not to come off from the gap between the back pad 13 and the polishing pad. Further, the inner circumference of the ring of the retainer 14 is formed to be slightly larger than the outer peripheral diameter of the wafer W, and when the wafer W is pressed against the polishing pad for polishing, the polishing pad is pressed by the retainer 14 and the wafer W is subducted. It is also possible to prevent the occurrence of dripping of the wafer W during polishing by.
The surface plate is rotatably supported and rotates in the same direction as or in the direction opposite to the rotation direction of the polishing head 12. A polishing pad is attached on the surface plate, and the lower surface of the wafer W is pressed with a predetermined force to polish the wafer W.

［２］ウェーハ貼付装置２の構造
ウェーハ貼付装置２は、ウェーハＷを片面研磨装置１の研磨ヘッド１２の下面に貼り付ける装置であり、図１および図２に示すように、基台２Ａ上に設けられる仮受台２１、水吐出槽２２、第１昇降装置２３、および第２昇降装置２４を備える。
仮受台２１は、板状部２１Ａと、板状部２１Ａの外周縁から起立する起立部２１Ｂを備える。 [2] Structure of Wafer Sticking Device 2 The wafer sticking device 2 is a device for sticking the wafer W to the lower surface of the polishing head 12 of the single-sided polishing device 1, and is mounted on the base 2A as shown in FIGS. 1 and 2. A temporary cradle 21, a water discharge tank 22, a first elevating device 23, and a second elevating device 24 are provided.
The temporary cradle 21 includes a plate-shaped portion 21A and an upright portion 21B that stands up from the outer peripheral edge of the plate-shaped portion 21A.

板状部２１Ａは、所定厚さの円形板状体から構成される。円形板状体の径方向中間には、エアブロー２１１が、円形板状体の中心周りに複数箇所（本実施形態では４箇所）に設けられている。エアブロー２１１は、ウェーハＷを貼り付ける前に、貼り付け面の余分な水分を飛ばす機能を有する。 The plate-shaped portion 21A is composed of a circular plate-shaped body having a predetermined thickness. Air blows 211 are provided at a plurality of locations (four locations in the present embodiment) around the center of the circular plate-shaped body in the radial middle of the circular plate-shaped body. The air blow 211 has a function of removing excess water on the sticking surface before sticking the wafer W.

起立部２１Ｂは、板状部２１Ａの外周に、複数本設置される（本実施形態では、ウェーハＷの円周上に４本均等に設置されている）。起立部２１Ｂは、板状部２１Ａの外周端面に、複数のボルト２１２によって固定される。なお、図示を略したが、起立部２１Ｂの内周面の中間部分には、シャワーノズルが起立部２１Ｂのリング周りに複数箇所設けられ、シャワーノズルから水を研磨ヘッド１２のバックパッド１３に吐出することにより、バックパッド１３を保水する。 A plurality of the upright portions 21B are installed on the outer periphery of the plate-shaped portion 21A (in the present embodiment, four are evenly installed on the circumference of the wafer W). The upright portion 21B is fixed to the outer peripheral end surface of the plate-shaped portion 21A by a plurality of bolts 212. Although not shown, a plurality of shower nozzles are provided around the ring of the standing portion 21B in the middle portion of the inner peripheral surface of the standing portion 21B, and water is discharged from the shower nozzle to the back pad 13 of the polishing head 12. By doing so, the back pad 13 is retained in water.

また、起立部２１Ｂの上端には、仮受部２１３が設けられている。
仮受部２１３の上面は、内側に向かって下方に傾斜したテーパ面とされている。ウェーハＷを受ける際には、仮受部２１３のテーパ面が、ウェーハＷの外周縁のＲ面取り部と当接し、ウェーハＷの外周縁を支持する。 Further, a temporary receiving portion 213 is provided at the upper end of the standing portion 21B.
The upper surface of the temporary receiving portion 213 is a tapered surface that is inclined downward toward the inside. When receiving the wafer W, the tapered surface of the temporary receiving portion 213 comes into contact with the R chamfered portion of the outer peripheral edge of the wafer W to support the outer peripheral edge of the wafer W.

水吐出槽２２は、ウェーハＷに水を吐出する円柱状部材であり、凹部２２Ａおよび吐出部２２Ｂを備える。なお、水吐出槽２２の外周径は、ウェーハＷの外径よりも小さければよい。
凹部２２Ａは、水吐出槽２２の外周よりも小径の円形状に形成され、凹部２２Ａの中心は、水吐出槽２２の円形中心と同じとされ、漏斗状または球面状の傾斜面を有し、ウェーハＷが仮受台２１に支持された際、ウェーハＷの中央下方に位置する。
吐出部２２Ｂは、凹部２２Ａの底部に形成される複数箇所の孔２２１を備え、これらの孔２２１からウェーハＷと凹部２２Ａの空間に水を吐出する。孔２２１は、水吐出槽２２の内部に形成される十字状の配管２２２に連通し（図２参照）、配管２２２には、水吐出槽２２の外周に接続される水供給管２２３から水が供給される。 The water discharge tank 22 is a columnar member that discharges water to the wafer W, and includes a recess 22A and a discharge portion 22B. Incidentally, the outside diameter of the water discharge tank 22 may be smaller than the outer diameter of the wafer W.
The recess 22A is formed in a circular shape having a diameter smaller than the outer circumference of the water discharge tank 22, and the center of the recess 22A is the same as the circular center of the water discharge tank 22, and has a funnel-shaped or spherical inclined surface. When the wafer W is supported by the temporary cradle 21, it is located below the center of the wafer W.
The discharge portion 22B includes a plurality of holes 221 formed in the bottom portion of the recess 22A, and discharges water from these holes 221 into the space between the wafer W and the recess 22A. The hole 221 communicates with the cross-shaped pipe 222 formed inside the water discharge tank 22 (see FIG. 2), and water flows into the pipe 222 from the water supply pipe 223 connected to the outer periphery of the water discharge tank 22. Be supplied.

第１昇降装置２３は、仮受台２１を上下に昇降させる装置であり、昇降装置本体２３Ａおよびカバー部２３Ｂを備える。
昇降装置本体２３Ａは、仮受台２１を上下に昇降させる本体部分であり、軸受部２３１および軸部２３２を備える。
軸受部２３１は、ボールスプライン軸受から構成され、基台２Ａ上に固定される。
軸部２３２は、外周面にスプライン溝が形成された軸状部材から構成され、軸受部２３１内に挿入される。軸部２３２の上端は、仮受台２１の下面中心に取り付けられている。軸部２３２の下端は、第１昇降装置２３の下方に設けられるエアシリンダ２Ｂに接続されている。
エアシリンダ２Ｂが伸縮すると、軸部２３２は上下に昇降し、これに伴い、仮受台２１も上下に昇降する。 The first elevating device 23 is a device for elevating and lowering the temporary cradle 21 up and down, and includes an elevating device main body 23A and a cover portion 23B.
The elevating device main body 23A is a main body portion for raising and lowering the temporary cradle 21 up and down, and includes a bearing portion 231 and a shaft portion 232.
The bearing portion 231 is composed of a ball spline bearing and is fixed on the base 2A.
The shaft portion 232 is composed of a shaft-shaped member having a spline groove formed on the outer peripheral surface thereof, and is inserted into the bearing portion 231. The upper end of the shaft portion 232 is attached to the center of the lower surface of the temporary cradle 21. The lower end of the shaft portion 232 is connected to an air cylinder 2B provided below the first elevating device 23.
When the air cylinder 2B expands and contracts, the shaft portion 232 moves up and down, and the temporary cradle 21 also moves up and down accordingly.

カバー部２３Ｂは、昇降装置本体２３Ａを囲む筒状体から構成され、昇降装置本体２３Ａが、ウェーハＷの貼り付け時に使用する水によって濡れるのを防止する。カバー部２３Ｂは、固定筒部２３３および稼働筒部２３４を備える。
固定筒部２３３は、円形状の筒状体から構成され、軸受部２３１を囲むように設けられ、下端が基台２Ａに固定されている。
稼働筒部２３４は、固定筒部２３３よりも径の小さな円筒状体から構成され、下部は固定筒部２３３の内部に収容される。稼働筒部２３４は、軸部２３２の上下動に伴い、上下に昇降し、軸部２３２が外部に露出することを防止する。 The cover portion 23B is composed of a tubular body that surrounds the elevating device main body 23A, and prevents the elevating device main body 23A from getting wet with water used when the wafer W is attached. The cover portion 23B includes a fixed cylinder portion 233 and an operating cylinder portion 234.
The fixed cylinder portion 233 is composed of a circular tubular body, is provided so as to surround the bearing portion 231 and has a lower end fixed to the base 2A.
The operating cylinder portion 234 is composed of a cylindrical body having a diameter smaller than that of the fixed cylinder portion 233, and the lower portion thereof is housed inside the fixed cylinder portion 233. The operating cylinder portion 234 moves up and down with the vertical movement of the shaft portion 232 to prevent the shaft portion 232 from being exposed to the outside.

第２昇降装置２４は、水吐出槽２２を上下に昇降させる装置であり、昇降装置本体２４Ａおよびカバー部２４Ｂを備える。
昇降装置本体２４Ａは、水吐出槽２２を昇降させる本体部分であり、シリンダ本体２４１および昇降部２４２を備える。
シリンダ本体２４１は、仮受台２１の板状部２１Ａの中央に設けられ、ボルト等により板状部２１Ａに固定されている。
昇降部２４２は、上端が水吐出槽２２の下面に取り付けられている。昇降部２４２は、図示しないエアの供給源からシリンダ本体２４１にエアが供給され、昇降部２４２の上部が上下方向に伸縮し、昇降部２４２の伸縮に伴い、水吐出槽２２が上下に昇降する。 The second elevating device 24 is a device that elevates and lowers the water discharge tank 22 up and down, and includes an elevating device main body 24A and a cover portion 24B.
The elevating device main body 24A is a main body portion for raising and lowering the water discharge tank 22, and includes a cylinder main body 241 and an elevating portion 242.
The cylinder body 241 is provided in the center of the plate-shaped portion 21A of the temporary cradle 21, and is fixed to the plate-shaped portion 21A by a bolt or the like.
The upper end of the elevating portion 242 is attached to the lower surface of the water discharge tank 22. In the elevating part 242, air is supplied to the cylinder body 241 from an air supply source (not shown), the upper part of the elevating part 242 expands and contracts in the vertical direction, and the water discharge tank 22 moves up and down as the elevating part 242 expands and contracts. ..

カバー部２４Ｂは、昇降装置本体２４Ａを囲む筒状体から構成され、昇降装置本体２４Ａが、ウェーハＷの貼り付け時に使用する水によって濡れるのを防止する。カバー部２４Ｂは、固定筒部２４３および稼働筒部２４４を備える。
固定筒部２４３は、昇降装置本体２４Ａを囲む円筒状体から構成され、下端が仮受台２１の板状部２１Ａに固定されている。
稼働筒部２４４は、固定筒部２４３よりも径の小さな円筒状体から構成され、下部は固定筒部２４３の内部に収容される。稼働筒部２４４は、昇降部２４２の伸縮に伴い、上下に昇降し、シリンダ本体２４１が外部に露出することを防止する。 The cover portion 24B is composed of a tubular body that surrounds the elevating device main body 24A, and prevents the elevating device main body 24A from getting wet with water used when attaching the wafer W. The cover portion 24B includes a fixed cylinder portion 243 and an operating cylinder portion 244.
The fixed cylinder portion 243 is composed of a cylindrical body that surrounds the elevating device main body 24A, and its lower end is fixed to the plate-shaped portion 21A of the temporary cradle 21.
The operating cylinder portion 244 is composed of a cylindrical body having a diameter smaller than that of the fixed cylinder portion 243, and the lower portion thereof is housed inside the fixed cylinder portion 243. The operating cylinder portion 244 moves up and down as the elevating portion 242 expands and contracts, preventing the cylinder body 241 from being exposed to the outside.

［３］ウェーハＷの位置決め装置３の構造
図３および図４には、ウェーハＷの位置決め装置３が示されている。位置決め装置３は、ウェーハＷを水平方向に移動させ、ウェーハＷの水平方向位置を位置決めする装置である。位置決め装置３は、駆動部３Ａ、一対の支持部３Ｂ、および一対の腕部３Ｃを備える。また、位置決め装置３は図示されないエアシリンダで昇降できるようになっている。
駆動部３Ａは、エアシリンダ等のアクチュエータから構成され、アクチュエータを伸縮させることにより、両端に設けられた把持部３１が水平方向に伸縮する。
それぞれの把持部３１には、支持部３Ｂが設けられている。
支持部３Ｂは、上下に延びる角形柱状部材から構成されている。それぞれの支持部３Ｂの下端には、腕部３Ｃが設けられている。 [3] Structure of Wafer W Positioning Device 3 FIG. 3 and FIG. 4 show the wafer W positioning device 3. The positioning device 3 is a device that moves the wafer W in the horizontal direction and positions the position of the wafer W in the horizontal direction. The positioning device 3 includes a drive unit 3A, a pair of support units 3B, and a pair of arm units 3C. Further, the positioning device 3 can be raised and lowered by an air cylinder (not shown).
The drive unit 3A is composed of an actuator such as an air cylinder, and by expanding and contracting the actuator, the grip portions 31 provided at both ends expand and contract in the horizontal direction.
Each grip portion 31 is provided with a support portion 3B.
The support portion 3B is composed of a rectangular columnar member extending vertically. An arm portion 3C is provided at the lower end of each support portion 3B.

腕部３Ｃは、支持部３Ｂの下端に設けられ、図４に示すように、平面視円弧状の板状体から構成され、ウェーハＷの端面を把持する。腕部３Ｃは、固定腕部３３および稼働腕部３４を備える。
固定腕部３３は、支持部３Ｂの下端に固定される１／４円弧状の板状体である。固定腕部３３の先端には、取付部材３５が設けられている。
稼働腕部３４は、固定腕部３３の下部に取り付けられる１／４円弧状の板状体から構成される。稼働腕部３４は、固定腕部３３に対して、円弧の中心が取付部材３５によって取り付けられ、稼働腕部３４の円弧中心に向かって移動可能とされる。
稼働腕部３４の円弧内周面には、シリコン等の可撓性のクッション３６が設けられている。クッション３６は、ウェーハＷの側面に当接し、互いに対向する４つのクッション３６によってウェーハＷを把持する。 The arm portion 3C is provided at the lower end of the support portion 3B, and as shown in FIG. 4, is composed of a plate-like body having an arc shape in a plan view and grips the end surface of the wafer W. The arm portion 3C includes a fixed arm portion 33 and a working arm portion 34.
The fixed arm portion 33 is a 1/4 arc-shaped plate-like body fixed to the lower end of the support portion 3B. A mounting member 35 is provided at the tip of the fixed arm portion 33.
The operating arm portion 34 is composed of a quarter arc-shaped plate-like body attached to the lower portion of the fixed arm portion 33. The center of the arc of the operating arm 34 is attached to the fixed arm 33 by the mounting member 35, and the moving arm 34 can move toward the center of the arc of the operating arm 34.
A flexible cushion 36 made of silicon or the like is provided on the inner peripheral surface of the arc of the operating arm portion 34. The cushion 36 abuts on the side surface of the wafer W and grips the wafer W by four cushions 36 facing each other.

［４］実施形態の作用および効果
次に、前述したウェーハ貼付装置２の作用について、図５に示すフローチャートに基づいて説明する。
まず、片面研磨装置１の研磨ヘッド１２を、研磨ヘッド１２の回転中心が、ウェーハ貼付装置２の仮受台２１の中心上方となるように移動する（工程Ｓ１）。
図示を略したが、ロボットハンドを用いて、ウェーハＷを仮受台２１の上に設置する（工程Ｓ２）。
ウェーハＷの位置決め装置３により、対向する稼働腕部３４を互いに接近させてウェーハＷを、仮受台２１の中心上にセンタリングする（工程Ｓ３）。
次に、第１昇降装置２３の昇降装置本体２３Ａにより、仮受台２１を上昇させ、ウェーハＷを研磨ヘッド１２のバックパッド１３が設けられた下面に接近させる（工程Ｓ４）。 [4] Actions and Effects of the Embodiment Next, the actions of the wafer attachment device 2 described above will be described with reference to the flowchart shown in FIG.
First, the polishing head 12 of the single-sided polishing apparatus 1 is moved so that the center of rotation of the polishing head 12 is above the center of the temporary cradle 21 of the wafer affixing apparatus 2 (step S1).
Although not shown, the wafer W is installed on the temporary cradle 21 by using a robot hand (step S2).
The wafer W positioning device 3 brings the opposing operating arm portions 34 closer to each other to center the wafer W on the center of the temporary cradle 21 (step S3).
Next, the temporary cradle 21 is raised by the lifting device main body 23A of the first lifting device 23, and the wafer W is brought close to the lower surface of the polishing head 12 provided with the back pad 13 (step S4).

仮受台２１を上昇させた後、水吐出槽２２の吐出部２２Ｂの４箇所の孔２２１から水を吐出する（工程Ｓ５）。さらに、図６に示すように、第２昇降装置２４の昇降装置本体２３Ａにより、水吐出槽２２を上昇させる（工程Ｓ６）。 After raising the temporary cradle 21, water is discharged from the four holes 221 of the discharge portion 22B of the water discharge tank 22 (step S5). Further, as shown in FIG. 6, the water discharge tank 22 is raised by the lifting device main body 23A of the second lifting device 24 (step S6).

ウェーハＷは、図７に示すように、水の吐出圧（凹部２２Ａの内圧）により、下面中央から研磨ヘッド１２のバックパッド１３の面に押しつけられ、研磨ヘッド１２の下面に貼り付けられる（工程Ｓ７）
ここで、仮受台２１の上昇時、ウェーハＷと水吐出槽２２の距離Ｄ１は、１００μｍ〜１５０μｍとされるが、可能な限り接近させた方が、水吐出槽２２から吐出された水による押しつけ力が大きくなるので、好ましい。
本実施形態において、このような距離Ｄ１をとったのは、ウェーハＷの厚さのばらつき、バックパッド１３の厚さのばらつき、バックパッド１３へのウェーハＷの沈み込み量、第１昇降装置２３の昇降量の精度、水吐出槽２２の上面の面精度のばらつき等によって、ウェーハＷが研磨ヘッド１２と干渉することを防止するためである。 As shown in FIG. 7, the wafer W is pressed against the surface of the back pad 13 of the polishing head 12 from the center of the lower surface by the discharge pressure of water (internal pressure of the recess 22A), and is attached to the lower surface of the polishing head 12 (step). S7)
Here, when the temporary pedestal 21 is raised, the distance D1 between the wafer W and the water discharge tank 22 is set to 100 μm to 150 μm, but it is better to bring them as close as possible due to the water discharged from the water discharge tank 22. This is preferable because the pressing force is large.
In the present embodiment, such a distance D1 is taken because of the variation in the thickness of the wafer W, the variation in the thickness of the back pad 13, the amount of the wafer W sinking into the back pad 13, and the first elevating device 23. This is to prevent the wafer W from interfering with the polishing head 12 due to the accuracy of the lifting amount of the wafer, the variation in the surface accuracy of the upper surface of the water discharge tank 22, and the like.

ここで、ウェーハＷを研磨ヘッド１２の下面に押しつける水の吐出圧目標値は、以下のように計算することができる。
ウェーハＷに伝える力の目標値をＦ（Ｎ）とした場合、水吐出槽２２の凹部２２Ａの内径をｒ（ｍ）とすると、吐出圧Ｐ（Ｐａ）は、以下の式（１）によって求められる。
Ｐ＝Ｆ／π（ｒ／２）２・・・（１）
目標値Ｆ＝９．８Ｎ、内径ｒ＝０．０８ｍとすると、吐出圧Ｐは、Ｐ＝９．８／π／０．０４２≒１．９５ｋＰａとなる。 Here, the discharge pressure target value of the water that presses the wafer W against the lower surface of the polishing head 12 can be calculated as follows.
When the target value of the force transmitted to the wafer W is F (N) and the inner diameter of the recess 22A of the water discharge tank 22 is r (m), the discharge pressure P (Pa) is obtained by the following formula (1). Be done.
P = F / π (r / 2) 2 ... (1)
Assuming that the target value F = 9.8N and the inner diameter r = 0.08m, the discharge pressure P is P = 9.8 / π / 0.04 2 ≈ 1.95 kPa.

一方、ウェーハＷの質量Ｍ（ｇ）は、ウェーハＷの直径をＲ（ｃｍ）、厚さｔ（ｃｍ）、シリコンの密度ρ（ｇ／ｃｍ３）とすると下記式（２）によって求められる。
Ｍ＝π×（Ｒ／２）２×ｔ×ρ・・・（２）
直径３００ｍｍ、厚さ７８０μｍのウェーハＷの場合、シリコンの密度が２．３（ｇ／ｃｍ３）であるから、ウェーハＷの重量は、Ｍ＝π×１５２×０．０７８×２．３＝１２６．８（ｇ）となる。 On the other hand, the mass M (g) of the wafer W can be obtained by the following formula (2), where the diameter of the wafer W is R (cm), the thickness is t (cm), and the density of silicon is ρ (g / cm 3).
M = π × (R / 2) 2 × t × ρ ・ ・ ・ (2)
In the case of a wafer W having a diameter of 300 mm and a thickness of 780 μm, the density of silicon is 2.3 (g / cm 3 ), so that the weight of the wafer W is M = π × 15 2 × 0.078 × 2.3 = It becomes 126.8 (g).

１２６．８ｇのウェーハＷを、凹部２２Ａの内径がｒ＝０．０８ｍの水吐出槽２２によって上昇させる吐出圧Ｐ１は、式（１）から、Ｐ１＝０．１２６８／９．８／π／０．０４２≒０．２５ｋＰａとなる。
同様に、１２６．８ｇのウェーハＷを凹部２２Ａの内径がｒ＝０．２ｍの水吐出槽２２によって上昇させる吐出圧Ｐ２は、式（１）から、Ｐ２＝０．１２６８／９．８／π／０．１２≒０．０４１ｋＰａとなる。この計算値はウェーハＷを貼り付けるために最低限必要な吐出圧であって、実際にウェーハＷを上昇させるためにはこの値以上の力が必要となる。 From the formula (1), the discharge pressure P1 for raising the 126.8 g wafer W by the water discharge tank 22 having the inner diameter of the recess 22A of r = 0.08 m is P1 = 0.1268 / 9.8 / π / 0. .04 2 ≈ 0.25 kPa.
Similarly, the discharge pressure P2 for raising the 126.8 g wafer W by the water discharge tank 22 having the inner diameter of the recess 22A of r = 0.2 m is calculated from the equation (1) by P2 = 0.1268 / 9.8 / π. /0.1 2 ≈ 0.041 kPa. This calculated value is the minimum discharge pressure required for attaching the wafer W, and a force greater than this value is required to actually raise the wafer W.

このような本実施形態によれば、以下のような効果がある。
仮受台２１にウェーハＷを支持させた状態で片面研磨装置１のウェーハＷの貼付面に接近させ、水吐出槽２２から水を吐出することにより、ウェーハＷを貼付面に貼り付けることができる。ウェーハＷを貼付面に貼り付けるに際して、水圧を利用して貼り付けることができるため、ウェーハＷに貼り付け時の接触痕や、貼り付け時の傷を生じさせることがなく、ウェーハＷの表面品質が悪化することがない。 According to this embodiment, there are the following effects.
The wafer W can be attached to the attachment surface by approaching the attachment surface of the wafer W of the single-side polishing apparatus 1 with the wafer W supported by the temporary cradle 21 and discharging water from the water discharge tank 22. .. When the wafer W is attached to the attachment surface, it can be attached by using water pressure, so that there is no contact mark at the time of attachment to the wafer W or scratches at the time of attachment, and the surface quality of the wafer W is not generated. Does not get worse.

吐出部２２Ｂが凹部２２Ａの中央に水を吐出し、ウェーハＷを凹部２２Ａ全体で押すようになっているので、ウェーハＷを片面研磨装置１の貼付面に押しつける力を、ウェーハＷの中央部において、面で作用させることができる。片面研磨装置１の貼付面では、貼付面とウェーハＷとの間に供給される水を、作用する水圧の小さいウェーハＷの外周から排出できるため、片面研磨装置１の貼付面にウェーハＷを確実に貼り付けることができる。 Since the discharge portion 22B discharges water to the center of the recess 22A and pushes the wafer W over the entire recess 22A, the force that pushes the wafer W against the sticking surface of the single-side polishing apparatus 1 is applied to the center portion of the wafer W. , Can act on the surface. On the sticking surface of the single-sided polishing device 1, the water supplied between the sticking surface and the wafer W can be discharged from the outer circumference of the wafer W having a small acting water pressure, so that the wafer W is surely placed on the sticking surface of the single-sided polishing device 1. Can be pasted on.

第１昇降装置２３を利用して仮受台２１を片面研磨装置１の貼付面に接近させ、貼付面とウェーハＷの間に所定の隙間を有して維持することができる。そして、第２昇降装置２４を利用して、水を吐出させながら水吐出槽２２をウェーハＷに所望の状態に接近させることにより、ウェーハＷを片面研磨装置１の貼付面に貼り付けることができる。 The temporary cradle 21 can be brought close to the sticking surface of the single-sided polishing device 1 by using the first elevating device 23, and can be maintained with a predetermined gap between the sticking surface and the wafer W. Then, the wafer W can be attached to the attachment surface of the single-side polishing apparatus 1 by bringing the water discharge tank 22 closer to the wafer W in a desired state while discharging water by using the second elevating device 24. ..

１…片面研磨装置、２…ウェーハ貼付装置、２Ａ…基台、２Ｂ…エアシリンダ、３…位置決め装置、３Ａ…駆動部、３Ｂ…支持部、３Ｃ…腕部、１１…ヘッド回転軸、１２…研磨ヘッド、１３…バックパッド、１４…リテーナー、２１…仮受台、２１Ａ…板状部、２１Ｂ…起立部、２２…水吐出槽、２２Ａ…凹部、２２Ｂ…吐出部、２３…第１昇降装置、２３Ａ…昇降装置本体、２３Ｂ…カバー部、２４…第２昇降装置、２４Ａ…昇降装置本体、２４Ｂ…カバー部、３１…把持部、３３…固定腕部、３４…稼働腕部、３５…取付部材、３６…クッション、２１１…エアブロー、２１２…ボルト、２１３…仮受部、２２１…孔、２２２…配管、２２３…水供給管、２３１…軸受部、２３２…軸部、２３３…固定筒部、２３４…稼働筒部、２４１…シリンダ本体、２４２…昇降部、２４３…固定筒部、２４４…稼働筒部、Ｄ１…距離、Ｗ…ウェーハ。 1 ... Single-sided polishing device, 2 ... Wafer attachment device, 2A ... Base, 2B ... Air cylinder, 3 ... Positioning device, 3A ... Drive unit, 3B ... Support unit, 3C ... Arm, 11 ... Head rotation shaft, 12 ... Polishing head, 13 ... back pad, 14 ... retainer, 21 ... temporary cradle, 21A ... plate-shaped part, 21B ... standing part, 22 ... water discharge tank, 22A ... recess, 22B ... discharge part, 23 ... first lifting device , 23A ... Lifting device body, 23B ... Cover part, 24 ... Second lifting device, 24A ... Lifting device body, 24B ... Cover part, 31 ... Gripping part, 33 ... Fixed arm part, 34 ... Working arm part, 35 ... Mounting Members, 36 ... Cushion, 211 ... Air blow, 212 ... Bolt, 213 ... Temporary receiving part, 221 ... Hole, 222 ... Piping, 223 ... Water supply pipe, 231 ... Bearing part, 232 ... Shaft part, 233 ... Fixed cylinder part, 234 ... Operating cylinder, 241 ... Cylinder body, 242 ... Elevating part, 243 ... Fixed cylinder, 244 ... Operating cylinder, D1 ... Distance, W ... Wafer.

Claims (4)

片面研磨装置にウェーハを水の表面張力により貼り付ける片面研磨装置へのウェーハ貼付装置であって、
前記ウェーハの外周縁で当接し、前記ウェーハを支持する仮受台と、
前記仮受台上に設けられ、前記ウェーハに水を吐出する水吐出槽とを備え、
前記水吐出槽の外周径は、前記ウェーハの外径よりも小さいことを特徴とする片面研磨装置へのウェーハ貼付装置。 A wafer affixing device to a single-sided polishing device that attaches a wafer to a single-sided polishing device by the surface tension of water.
A temporary cradle that abuts on the outer peripheral edge of the wafer and supports the wafer,
A water discharge tank provided on the temporary cradle and for discharging water to the wafer is provided .
A wafer affixing apparatus to a single-sided polishing apparatus , wherein the outer diameter of the water discharge tank is smaller than the outer diameter of the wafer. 請求項１に記載の片面研磨装置へのウェーハ貼付装置において、
前記水吐出槽は、前記仮受台に支持されたウェーハの中央下方に位置する凹部と、前記凹部の底部に形成され、前記ウェーハの中央に水を吐出する吐出部とを備えていることを特徴とする片面研磨装置へのウェーハ貼付装置。 In the wafer affixing apparatus to the single-sided polishing apparatus according to claim 1,
The water discharge tank includes a recess located below the center of the wafer supported by the temporary cradle, and a discharge portion formed at the bottom of the recess and discharging water at the center of the wafer. A featured wafer affixing device to a single-sided polishing device. 請求項１または請求項２に記載の片面研磨装置へのウェーハ貼付装置において、
前記仮受台を前記片面研磨装置の貼付面に接近、離間させる第１昇降装置と、
前記水吐出槽を、前記仮受台上に支持されたウェーハに接近、離間させる第２昇降装置とを備えていることを特徴とする片面研磨装置へのウェーハ貼付装置。 In the wafer affixing apparatus to the single-sided polishing apparatus according to claim 1 or 2.
A first elevating device that brings the temporary cradle closer to and away from the sticking surface of the single-sided polishing device, and
A wafer affixing device to a single-sided polishing device, comprising a second elevating device for bringing the water discharge tank closer to and away from a wafer supported on the temporary cradle. 片面研磨装置にウェーハを水の表面張力により貼り付ける片面研磨装置へのウェーハ貼付方法であって、
仮受台に前記ウェーハの外周縁を支持させる工程と、
前記仮受台を前記片面研磨装置のウェーハの貼付面に、前記ウェーハと所定の隙間を持たせて接近させる工程と、
前記ウェーハの中央下方から吐出する水の水面の外径が、前記ウェーハの外径よりも小さくなるように水を吐出しながら、前記ウェーハを前記片面研磨装置のウェーハの貼付面に押しつける工程とを実施することを特徴とする片面研磨装置へのウェーハ貼付方法。 This is a method of attaching a wafer to a single-sided polishing machine, in which the wafer is attached to the single-sided polishing machine by the surface tension of water.
The process of supporting the outer peripheral edge of the wafer on the temporary cradle, and
A step of bringing the temporary cradle closer to the wafer attachment surface of the single-sided polishing apparatus with a predetermined gap from the wafer.
A step of pressing the wafer against the wafer affixing surface of the single-side polishing apparatus while discharging water so that the outer diameter of the water surface of the water discharged from the lower center of the wafer is smaller than the outer diameter of the wafer. A method for attaching a wafer to a single-sided polishing machine, which is characterized in that it is carried out.
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TW107130773A TWI711508B (en) 2017-10-16 2018-09-03 Wafer sticking apparatus for single side polishing apparatus and wafer sticking method for single side polishing apparatus
KR1020207013615A KR102370447B1 (en) 2017-10-16 2018-10-03 Wafer bonding apparatus to single-side polishing apparatus, and wafer bonding method to single-side polishing apparatus
CN201880067566.2A CN111295267B (en) 2017-10-16 2018-10-03 Wafer attaching device for single-side polishing device and wafer attaching method on single-side polishing device
PCT/JP2018/037125 WO2019078009A1 (en) 2017-10-16 2018-10-03 Device for affixing wafer to single-side polishing device, and method for affixing wafer to single-side polishing device
DE112018004568.4T DE112018004568T5 (en) 2017-10-16 2018-10-03 DEVICE FOR ATTACHING A WAFER TO A ONE-SIDED POLISHER AND METHOD FOR ATTACHING A WAFER TO A ONE-SIDED POLISHER

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