TWI708872B - Equipment for handling substrates - Google Patents
Equipment for handling substrates Download PDFInfo
- Publication number
- TWI708872B TWI708872B TW107146145A TW107146145A TWI708872B TW I708872 B TWI708872 B TW I708872B TW 107146145 A TW107146145 A TW 107146145A TW 107146145 A TW107146145 A TW 107146145A TW I708872 B TWI708872 B TW I708872B
- Authority
- TW
- Taiwan
- Prior art keywords
- suction
- holes
- substrate
- annular
- pipe
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本發明一種用於操作襯底的設備,包括:抽氣管和抓取盤裝置;在抓取盤裝置的底部設置有沿圓周方向均勻設置的複數個第一抽氣孔,複數個第一抽氣孔與抽氣管連通;複數個第一抽氣孔分佈在抓取盤裝置底部的特定區域,在襯底與抓取盤裝置底部接觸時,複數個第一抽氣孔位於襯底外邊緣處,通過抽氣管以及複數個第一抽氣孔抽出在襯底與抓取盤裝置的底部之間的空氣,用以吸附襯底。本發明在生成負壓時,所需的抽氣量、抽力更小,襯底邊緣負壓均勻,避免襯底的壓傷及污染;提供雙重緩衝,避免在取放片過程中對晶片壓傷和污染,提高產品良率。An apparatus for operating a substrate of the present invention includes: a suction pipe and a disk grabbing device; a plurality of first suction holes uniformly arranged in the circumferential direction are arranged at the bottom of the grabbing disk device, and the plurality of first suction holes are The suction pipe is connected; a plurality of first suction holes are distributed in a specific area at the bottom of the grabbing disk device. When the substrate is in contact with the bottom of the grabbing disk device, the plurality of first suction holes are located at the outer edge of the substrate through the suction pipe and The plurality of first suction holes suck out the air between the substrate and the bottom of the gripping disk device to adsorb the substrate. When generating negative pressure, the present invention requires less suction and suction, uniform negative pressure at the edge of the substrate, avoiding crushing and contamination of the substrate; providing double buffering to avoid crushing the wafer during the picking and placing process And pollution, improve product yield.
Description
本發明涉及半導體集成製造技術領域,尤其涉及一種用於操作襯底的設備。The present invention relates to the field of semiconductor integrated manufacturing technology, and in particular to a device for operating a substrate.
在半導體積體電路製造領域中,為了生成外延塗覆的半導體晶圓,通常採用對外延反應器中的半導體晶圓進行外延塗層,沉積氣體穿過外延反應器,能在半導體晶圓的表面上沉積外延材料。在外延反應器中,晶片襯底傳送屬於非常重要的內容。晶片一般是圓形的,具有正面和背面,晶片正面是形成實現積體電路結構的晶片面;另外,晶片的邊緣處幾毫米區域也不用於實現積體電路製造。所以,在晶片傳送過程中,保護晶片正面不受損壞是非常重要的。In the field of semiconductor integrated circuit manufacturing, in order to produce epitaxially coated semiconductor wafers, the semiconductor wafer in the epitaxial reactor is usually used for epitaxial coating. The deposition gas passes through the epitaxial reactor and can be on the surface of the semiconductor wafer. Deposit epitaxial material on it. In epitaxial reactors, wafer substrate transfer is a very important content. The wafer is generally circular, with a front surface and a back surface. The front surface of the wafer forms the surface of the wafer to realize the integrated circuit structure; in addition, the area of a few millimeters at the edge of the wafer is not used to realize the integrated circuit manufacturing. Therefore, it is very important to protect the front surface of the wafer from damage during wafer transfer.
目前,在現有的外延反應器中具有多種用於傳送襯底的設備,但都有不足之處。例如,對於一種外延反應器中的用於操作襯底的設備,在取片過程中,在各抽氣孔處形成的吸附力作用於襯底的正面中央,襯底中央作用的吸附力將使襯底變形過大,從而容易形成壓傷;此外,在由工藝腔中取片時,襯底尚存有一定溫度,與設備的抓取裝置之間存在一定的粘附性,襯底可能不能被十分精準地吸附起來,無法保證平穩吸附,從而造成取片失敗或掉落;對於另一種外延反應器中的用於操作襯底的設備,設備的抓取裝置上的吸取孔佈置不合理,如果在抓取裝置和襯底之間出現真空,則需使用大流量抽吸,而產生的大吸附力往往會使襯底出現變形。因此,需要一種新的用於傳送襯底的設備。At present, there are many kinds of equipment for transferring substrates in existing epitaxial reactors, but all of them have shortcomings. For example, for an equipment used to manipulate the substrate in an epitaxial reactor, during the process of taking the film, the adsorption force formed at each suction hole acts on the front center of the substrate, and the adsorption force acting on the center of the substrate will make the substrate The bottom deformation is too large, which is easy to form a crush; in addition, when the substrate is taken from the process chamber, the substrate still has a certain temperature, and there is a certain adhesion between the gripping device of the equipment, and the substrate may not be completely Accurate adsorption cannot guarantee smooth adsorption, resulting in failure or falling of the chip; for the equipment used to manipulate the substrate in another epitaxial reactor, the arrangement of the suction holes on the grasping device of the equipment is unreasonable. When a vacuum occurs between the gripping device and the substrate, a large flow of suction is required, and the large adsorption force generated tends to deform the substrate. Therefore, a new equipment for transferring substrates is needed.
有鑑於此,本發明實施例提供一種用於操作襯底的設備。In view of this, an embodiment of the present invention provides an apparatus for handling a substrate.
根據本發明實施例的一面向,提供一種用於操作襯底的設備,包括:抽氣管和抓取盤裝置;所述抽氣管的一端與所述抓取盤裝置連接;在所述抓取盤裝置的底部設置有複數個第一抽氣孔,所述複數個第一抽氣孔與所述抽氣管連通;所述複數個第一抽氣孔分佈在所述抓取盤裝置底部的特定區域,使得在襯底與所述抓取盤裝置的底部接觸的狀態下,所述複數個第一抽氣孔位於所述襯底外邊緣處;通過所述抽氣管以及所述複數個第一抽氣孔抽出在所述襯底與所述抓取盤裝置的底部之間的空氣,用以吸附所述襯底。According to an aspect of the embodiment of the present invention, there is provided an apparatus for operating a substrate, including: an air suction pipe and a grabbing disk device; one end of the suction pipe is connected to the grabbing disk device; The bottom of the device is provided with a plurality of first exhaust holes, the plurality of first exhaust holes communicate with the exhaust pipe; the plurality of first exhaust holes are distributed in a specific area at the bottom of the grabbing disk device, so that When the substrate is in contact with the bottom of the disk grabbing device, the plurality of first suction holes are located at the outer edge of the substrate; and the plurality of first suction holes are drawn through the suction pipe and the plurality of first suction holes. The air between the substrate and the bottom of the disk grabbing device is used to adsorb the substrate.
較佳地,所述特定區域為環形區域,所述複數個第一抽氣孔在所述環形區域內沿圓周方向均勻設置;所述環形區域的最大半徑與所述襯底的半徑相等;所述環形區域的最小半徑與所述襯底半徑的比值為7/10。較佳地,所述抓取盤裝置包括:勻氣盤和承載盤;所述勻氣盤和所述承載盤連接;所述複數個第一抽氣孔設置在所述承載盤的底部;所述抽氣管的一端與所述勻氣盤連接,所述勻氣盤設置有通氣管道,所述複數個第一抽氣孔通過所述通氣管道與所述抽氣管連通。Preferably, the specific area is an annular area, and the plurality of first exhaust holes are uniformly arranged in the circumferential direction in the annular area; the maximum radius of the annular area is equal to the radius of the substrate; The ratio of the minimum radius of the annular area to the radius of the substrate is 7/10. Preferably, the disk grabbing device includes: an air evening disk and a supporting disk; the air evening disk is connected to the supporting disk; the plurality of first suction holes are provided at the bottom of the supporting disk; One end of the air suction pipe is connected with the air leveling plate, the air leveling plate is provided with a vent pipe, and the plurality of first suction holes are communicated with the suction pipe through the vent pipe.
較佳地,還包括:第一環形彈性元件和第二環形彈性元件;所述第一環形彈性元件和所述第二環形彈性元件位於所述勻氣盤和所述承載盤之間;所述第一環形彈性元件和所述第二環形彈性元件在所述勻氣盤和所述承載盤之間圍成環形密封空腔區域,所述通氣管道和所述複數個第一抽氣孔均與所述通氣管道的連通處位於所述環形密封空腔區域內連通。Preferably, it further includes: a first ring-shaped elastic element and a second ring-shaped elastic element; the first and second ring-shaped elastic elements are located between the gas distribution plate and the carrier plate; The first ring-shaped elastic element and the second ring-shaped elastic element enclose a ring-shaped sealed cavity area between the air squeeze plate and the carrying plate, the air duct and the plurality of first air extraction holes The communication points with the vent pipe are located in the area of the annular sealed cavity.
較佳地,所述複數個第一抽氣孔包括:至少兩組第一抽氣孔,所述至少兩組第一抽氣孔呈同心圓佈置並且每組第一抽氣孔都沿圓周方向均勻分佈;其中,所述至少兩組第一抽氣孔都位於所述環形密封空腔區域內。Preferably, the plurality of first air extraction holes include: at least two sets of first air extraction holes, the at least two sets of first air extraction holes are arranged in concentric circles and each group of first air extraction holes are evenly distributed along the circumferential direction; wherein , The at least two groups of first air extraction holes are all located in the annular sealed cavity area.
較佳地,所述複數個第一抽氣孔包括:兩組第一抽氣孔;第一組第一抽氣孔相對於第二組第一抽氣孔靠近所述承載盤的外邊緣;所述承載盤的底部設置有吸附槽,所述第一組第一抽氣孔與第二組第一抽氣孔均與所述吸附槽連通。Preferably, the plurality of first exhaust holes includes: two sets of first exhaust holes; the first set of first exhaust holes are closer to the outer edge of the carrier plate than the second set of first exhaust holes; the carrier plate An adsorption tank is provided at the bottom of the, and both the first group of first suction holes and the second group of first suction holes are in communication with the adsorption tank.
較佳地,所述勻氣盤包括:圓盤裝置;在所述圓盤裝置上設置有與所述環形密封空腔區域相連通的第二抽氣孔;其中,所述環形密封空腔區域通過所述第二抽氣孔與所述通氣管道相連通。Preferably, the air leveling disc includes: a disc device; a second suction hole communicating with the annular sealed cavity area is provided on the disc device; wherein the annular sealed cavity area passes The second suction hole is communicated with the ventilation pipe.
較佳地,所述通氣管道包括:複數個抽氣支管;所述複數個抽氣支管設置在所述圓盤裝置上;所述複數個抽氣支管的一端都與所述抽氣管的一端連通,各抽氣支管以與所述抽氣管的連接處為中心呈輻射狀分佈;所述複數個抽氣支管的另一端通過所述第二抽氣孔與所述環形密封空腔區域相連通。Preferably, the ventilation pipe includes: a plurality of suction branches; the plurality of suction branches are arranged on the disc device; one end of the plurality of suction branches is connected with one end of the suction pipe Each air extraction branch pipe is radially distributed around the connection point with the air extraction tube; the other end of the plurality of air extraction branch pipes communicates with the annular sealed cavity area through the second air extraction hole.
較佳地,在所述勻氣盤與所述抽氣管之間設置第三環形彈性元件和第四環形彈性元件;其中,所述第三環形彈性元件和所述第四環形彈性元件為同軸設置,所述第三環形彈性元件用以對所述複數個抽氣支管與所述抽氣管的連接處進行密封,所述第四環形彈性元件位於所述第三環形彈性元件的週邊,並分別與所述勻氣盤與所述抽氣管相接觸。Preferably, a third ring-shaped elastic element and a fourth ring-shaped elastic element are provided between the air leveling plate and the suction pipe; wherein, the third ring-shaped elastic element and the fourth ring-shaped elastic element are coaxially arranged , The third annular elastic element is used to seal the connection between the plurality of exhaust branch pipes and the exhaust pipe, and the fourth annular elastic element is located on the periphery of the third annular elastic element and is respectively connected with The air leveling plate is in contact with the suction pipe.
較佳地,所述圓盤裝置包括:中心圓盤和環形盤,所述中心圓盤和所述環形盤同心設置,並且複數個抽氣支管的兩端分別連接所述中心圓盤(151)和所述環形盤固定;所述中心圓盤與所述抽氣管的一端密封連接;其中,所述第二抽氣孔設置在所述環形盤上。Preferably, the disc device includes: a central disc and an annular disc, the central disc and the annular disc are arranged concentrically, and the two ends of a plurality of exhaust manifolds are respectively connected to the central disc (151) It is fixed to the annular disc; the central disc is in hermetically connected with one end of the suction pipe; wherein, the second suction hole is provided on the annular disc.
較佳地,複數個所述第二抽氣孔依照圓環形排列並沿圓周方向均勻分佈,其中,所述第二抽氣孔與所述抽氣支管對應設置。Preferably, a plurality of the second suction holes are arranged in a circular ring shape and evenly distributed along the circumferential direction, wherein the second suction holes are arranged corresponding to the suction branch pipes.
本發明用於操作襯底的設備,將抽氣孔均勻分散在襯底的邊緣,在襯底與設備之間產生負壓時,所需的抽氣量、抽力更小,襯底邊緣負壓均勻,可以降低襯底所受作用力,避免襯底的壓傷及污染;採用“階梯狀”的雙環形密封元件構成的緩衝系統,能夠使設備在接觸襯片的過程,提供雙重緩衝,避免在取放片過程中對晶片壓傷和污染,提高產品良率。The device of the present invention is used for operating the substrate. The suction holes are evenly dispersed on the edge of the substrate. When a negative pressure is generated between the substrate and the device, the required suction volume and suction force are smaller, and the negative pressure at the edge of the substrate is uniform , It can reduce the force on the substrate to avoid crushing and pollution of the substrate; the buffer system composed of "stepped" double ring sealing elements can provide double buffering when the equipment is in contact with the lining, and avoid The chip is crushed and contaminated in the process of picking and placing, which improves the product yield.
本發明實施例附加的面向和優點將在下面的描述中部分給出,這些將從下面的描述中變得明顯,或通過本發明的實踐瞭解到。The additional aspects and advantages of the embodiments of the present invention will be partially given in the following description, which will become obvious from the following description, or be understood through the practice of the present invention.
下面參照附圖對本發明進行更全面的描述,其中說明本發明的示例性實施例。下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅是本發明一部分實施例,而不是全部的實施例。基於本發明中的實施例,本領域普通技術人員在沒有做出創造性勞動前提下所獲得的所有其他實施例,都屬於本發明保護的範圍。下面結合圖和實施例對本發明的技術方案進行多方面的描述。The present invention will be described more fully below with reference to the accompanying drawings, in which exemplary embodiments of the present invention are illustrated. The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention. The technical solutions of the present invention will be described in various aspects below in conjunction with the figures and embodiments.
下文為了敘述方便,下文中所稱的“左”、“右”、“上”、“下”與附圖本身的左、右、上、下方向一致。For the convenience of description hereinafter, the "left", "right", "up" and "down" referred to below are consistent with the left, right, up, and down directions of the drawings themselves.
下文中的“第一”、“第二”等,僅用於描述上相區別,並沒有其它特殊的含義。The following "first", "second", etc., are only used to describe the difference, and have no other special meanings.
如第一圖至第三圖所示,本發明提供一種用於操作襯底的設備200,包括:抽氣管181和抓取盤裝置。抓取盤裝置可以實現為多種具體的結構,抽氣管181有中空的腔道35。抽氣管181的一端與抓取盤裝置連接,在抓取盤裝置的底部設置有沿圓周方向均勻設置的複數個第一抽氣孔,複數個第一抽氣孔與抽氣管181連通。複數個第一抽氣孔38,39分佈在所述抓取盤裝置底部的特定區域,第一抽氣孔的數量和具體佈置方式可以根據設計要求進行設置。As shown in the first to third figures, the present invention provides an
襯底40可以為多種半導體晶片襯底。在襯底40與抓取盤裝置的底部接觸的狀態下,複數個第一抽氣孔位於襯底40外邊緣處,通過抽氣管181以及複數個第一抽氣孔抽出在襯底40與抓取盤裝置的底部之間的空氣,用以吸附襯底40,使得吸附力分散在襯底40的外邊緣,可以減少襯底40的變形。其中,襯底外邊緣可以按照本領域技術人員對於襯底的中部和邊緣的通常理解來認定,例如,將半徑為襯底半徑70%-100%的環形區域看做是襯底外邊緣,此種情況下,特定區域為環形區域,複數個第一抽氣孔38,39在環形區域內沿圓周方向均勻設置。環形區域的最大半徑與襯底40的半徑相等;環形區域的最小半徑與襯底40半徑的比值為7/10。The
在一實施例中,抓取盤裝置包括:勻氣盤182和承載盤183。勻氣盤182和承載盤183連接,可以採用多種連接方式。複數個第一抽氣孔設置在承載盤183的底部。抽氣管181的一端與勻氣盤182連接,可以採用多種連接方式,例如抽氣管181通過連接螺釘101與勻氣盤182連接固定。勻氣盤182設置有通氣管道,通氣管道可以有多種結構和組成,複數個第一抽氣孔通過通氣管道與抽氣管181連通。In one embodiment, the disk grabbing device includes: an
第一環形彈性元件221和第二環形彈性元件222位於勻氣盤182和承載盤183之間。第一環形彈性元件221和第二環形彈性元件222在勻氣盤182和承載盤183之間圍成環形密封空腔區域,複數個第一抽氣孔與通氣管道的連通處位於環形密封空腔區域內。例如,勻氣盤182可以通過連接螺釘111與承載盤183連接固定,第一環形彈性元件221和第二環形彈性元件222設置於勻氣盤182與承載盤183之間,提供密封的空腔。The first ring-shaped
通過第一環形彈性元件221和第二環形彈性元件222可以形成“階梯狀”分佈,兩個環形彈性元件構成的彈性緩衝系統,同時達到提供密封的作用。第一環形彈性元件221和第二環形彈性元件222可以為O形橡膠圈進行密封,且O形橡膠圈能夠在350~400℃之間長期工作。採用高彈性聚合膠粘接、密封蝶簧等也可實現“階梯狀”分佈、環形密封空腔區域構成的彈性緩衝。The first annular
複數個第一抽氣孔可以為按圓形排列的至少兩組第一抽氣孔38,39,至少兩組第一抽氣孔38,39呈同心圓佈置並且每組第一抽氣孔都沿圓周方向均勻分佈,至少兩組第一抽氣孔都位於環形密封空腔區域內,第一抽氣孔38,39在承載盤183頂部的開孔都位於環形密封空腔區域內。例如,複數個第一抽氣孔包括兩組第一抽氣孔,第一組第一抽氣孔38相對於第二組第一抽氣孔39靠近承載盤183的外邊緣,承載盤183的底部設置有吸附槽41,第二組第一抽氣孔39位於吸附槽41內,第一組第一抽氣孔38和第二組第一抽氣孔39均與吸附槽41連通,從而能夠將吸附槽41內的空氣抽出。The plurality of first suction holes may be at least two groups of
勻氣盤182包括圓盤裝置,圓盤裝置可以採用多種結構。例如,圓盤裝置包括中心圓盤151和環形盤171,中心圓盤151和環形盤171同心設置,並且中心圓盤151和環形盤171固定連接,中心圓盤151與抽氣管181的一端密封連接。在圓盤裝置上設置有與環形密封空腔區域相連通的第二抽氣孔37,第二抽氣孔37可以設置在環形盤171上,環形密封空腔區域通過第二抽氣孔37與通氣管道相連通。The
通氣管道可以有多種結構。例如,通氣管道包括複數個抽氣支管161,複數個抽氣支管161設置在圓盤裝置上。複數個抽氣支管161的一端都與抽氣管181的一端連通,各抽氣支管161以與抽氣管181的連接處為中心呈輻射狀分佈。複數個抽氣支管161的另一端通過第二抽氣孔37與環形密封空腔區域相連通。複數個第二抽氣孔37按圓環形排列並沿圓周方向均勻分佈,第二抽氣孔37與抽氣支管161對應設置。中心圓盤151和環形盤171通過複數個抽氣支管161相互固定,複數個抽氣支管161的兩端分別連接中心圓盤151和環形盤171。可以採用通過中心向四周均勻輻射勻氣的方式,也可以採用從邊緣一點向中心勻氣、邊緣一點向邊緣四周勻氣等方式。例如,勻氣盤182可以是由中心圓盤151、複數個呈輻射狀的抽氣支管161以及環形盤171通過焊接或者膠接等方式組合而成的一個整體。The ventilation duct can have various structures. For example, the ventilation duct includes a plurality of
抽氣支管161擁有中空的腔道36,環形盤171上設有和抽氣支管161相對應的複數個第二抽氣孔37。在勻氣盤182與抽氣管181之間設置第三環形彈性元件121和第四環形彈性元件122;其中,第三環形彈性元件121和第四環形彈性元件122為同軸設置,第三環形彈性元件121用以對複數個抽氣支管161與抽氣管181的連接處進行密封,第四環形彈性元件122位於第三環形彈性元件121的週邊,並分別與勻氣盤182與抽氣管181相接觸。第四環形彈性元件122以及第三環形彈性元件121起到緩衝、密封的作用。The
使用如上實施例中的用於操作襯底的設備進行襯底操作的方法,包括:The method for performing substrate operation using the device for operating the substrate in the above embodiment includes:
步驟一,水平移動用於操作襯底的設備200,直到承載盤183位於襯底40的正上方。Step one: move the
步驟二,降低設備200直到承載盤183觸碰到襯底40的上邊緣的至少一點。Step two, lower the
步驟三,繼續緩慢降低設備200,使得勻氣盤182相對於水準軸線,但不相對於其垂直對稱軸線發生旋轉運動,直到承載盤183底面觸碰襯底40的整個上邊緣。在承載盤183對襯底40施加持續壓力的過程中,第一環形彈性元件221、第二環形彈性元件222提供彈性緩衝。Step three, continue to slowly lower the
在繼續緩慢降低設備200的過程中,由於設備200的本身自重,承載盤183將對襯底40施加持續壓力,此時勻氣盤182與承載盤183之間的第三環形密封元件221、222提供彈性緩衝,消解掉一部分壓力,同時,抽氣管181與勻氣盤182之間的環形密封元件121、122將使連接在一起的勻氣盤182和承載盤183經由相對於設備200的任意水準軸線,但不相對於設備200的垂直對稱軸線發生旋轉運動,從而使承載盤183下部面觸碰襯底40的整個上邊緣。In the process of continuing to slowly lower the
步驟四,通過抽吸系統經由抽氣管181、抽氣支管161、第二抽氣孔37、第一抽氣孔38,39將襯底40與承載盤183之間的吸附槽41內的氣體抽走,形成真空負壓,用以吸附襯底40。Step four, through the suction system through the
借助於設備200的抽吸系統抽取空氣,襯底40與承載盤183之間的吸附槽41中的氣體經由腔道35、腔道36,再由第二抽氣孔37、第一抽氣孔38、39被抽走,形成真空負壓,該負壓將壓迫襯底40“吸附”在承載盤183上,由於第一抽氣孔38、39所圍直徑微小於承載盤183的直徑,抽氣所需流量較小,襯底40邊緣受力也較小,同時由於第二抽氣孔37、第一抽氣孔38、39的均勻分佈,襯底40邊緣受力均勻。With the aid of the suction system of the
步驟五,在提升帶有襯底40的設備200後進行水平移動。Step five, after lifting the
上述實施例提供的用於操作襯底的設備,將抽氣孔均勻分散在襯底的邊緣,在生成襯底與設備之間負壓時,所需的抽氣量、抽力更小,襯底邊緣負壓均勻,可以降低襯底所受作用力,避免襯底的壓傷及污染;採用“階梯狀”的雙環形密封元件構成的緩衝系統,能夠使設備在接觸襯片的過程,提供雙重緩衝,避免在取放片過程中對晶片壓傷和污染,提高產品良率。The device for operating the substrate provided by the above embodiment disperses the suction holes evenly on the edge of the substrate. When the negative pressure between the substrate and the device is generated, the amount of suction and the suction force required are smaller, and the edge of the substrate The uniform negative pressure can reduce the force on the substrate and avoid crushing and pollution of the substrate; the buffer system composed of "stepped" double ring sealing elements can provide double buffering when the equipment is in contact with the lining , Avoid crushing and contaminating the chip during the picking and placing process, and improve the product yield.
上述本發明所公開的任一技術方案除另有聲明外,如果其公開了數值範圍,那麼公開的數值範圍均為優選的數值範圍,任何本領域的技術人員應該理解:優選的數值範圍僅僅是諸多可實施的數值中技術效果比較明顯或具有代表性的數值。由於數值較多,無法窮舉,所以本發明才公開部分數值以舉例說明本發明的技術方案,並且,上述列舉的數值不應構成對本發明創造保護範圍的限制。Unless otherwise stated, if any of the above-mentioned technical solutions disclosed in the present invention discloses a numerical range, then the disclosed numerical range is a preferred numerical range. Any person skilled in the art should understand that the preferred numerical range is only Among the many feasible values, the technical effect is obvious or representative value. Since there are too many numerical values to be exhaustive, the present invention only discloses some numerical values to illustrate the technical solutions of the present invention, and the above-listed numerical values should not constitute a limitation on the protection scope of the present invention.
同時,上述本發明如果公開或涉及了互相固定連接的零部件或結構件,那麼,除另有聲明外,固定連接可以理解為:能夠拆卸地固定連接(例如使用螺栓或螺釘連接),也可以理解為:不可拆卸的固定連接(例如鉚接、焊接),當然,互相固定連接也可以為一體式結構(例如使用鑄造工藝一體成形製造出來)所取代(明顯無法採用一體成形工藝除外)。At the same time, if the above-mentioned present invention discloses or involves parts or structural parts that are fixedly connected to each other, unless otherwise stated, fixed connection can be understood as a fixed connection that can be detached (for example, connected by bolts or screws), or It is understood as: non-detachable fixed connection (such as riveting, welding). Of course, the mutual fixed connection can also be replaced by an integrated structure (for example, manufactured by a casting process) (except obviously that the integrated forming process cannot be used).
另外,上述本發明公開的任一技術方案中所應用的用於表示位置關係或形狀的術語除另有聲明外其含義包括與其近似、類似或接近的狀態或形狀。本發明提供的任一部件既可以是由複數個單獨的組成部分組裝而成,也可以為一體成形工藝製造出來的單獨部件。In addition, unless otherwise stated, the terms used in any of the technical solutions disclosed in the present invention to indicate a positional relationship or shape include a state or shape similar to, similar to, or close to it, unless otherwise stated. Any component provided by the present invention can be assembled from a plurality of individual components, or can be an individual component manufactured by an integral forming process.
以上實施例僅用以說明本發明的技術方案而非對其限制;儘管參照較佳實施例對本發明進行了詳細的說明,所屬領域的普通技術人員應當理解:依然可以對本發明的具體實施方式進行修改或者對部分技術特徵進行等同替換;而不脫離本發明技術方案的精神,其均應涵蓋在本發明請求保護的技術方案範圍當中。The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them; although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the specific embodiments of the present invention can still be carried out. Modification or equivalent replacement of some technical features; without departing from the spirit of the technical solution of the present invention, all of them shall be covered by the scope of the technical solution claimed by the present invention.
本發明的描述是為了示例和描述起見而給出的,而並不是無遺漏的或者將本發明限於所公開的形式。很多修改和變化對於本領域的普通技術人員而言是顯然的。選擇和描述實施例是為了更好說明本發明的原理和實際應用,並且使本領域的普通技術人員能夠理解本發明從而設計適於特定用途的帶有各種修改的各種實施例。The description of the present invention is given for the sake of example and description, rather than being exhaustive or limiting the present invention to the disclosed form. Many modifications and changes are obvious to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention, and to enable those of ordinary skill in the art to understand the present invention so as to design various embodiments with various modifications suitable for specific purposes.
35、36‧‧‧腔道37‧‧‧第二抽氣孔38、39‧‧‧第一抽氣孔40‧‧‧襯底41‧‧‧吸附槽101、111‧‧‧螺釘121‧‧‧第三環形彈性元件122‧‧‧第四環形彈性元件151‧‧‧中心圓盤161‧‧‧抽氣支管171‧‧‧環形盤181‧‧‧抽氣管182‧‧‧勻氣盤183‧‧‧承載盤200‧‧‧用於操作襯底的設備221‧‧‧第一環形彈性元件222‧‧‧第二環形彈性元件35、36‧‧‧
為了更清楚地說明本發明實施例或現有技術中的技術方案,下面將對實施例或現有技術描述中所需要使用的附圖作簡單地介紹,顯而易見地,下面描述中的附圖僅僅是本發明的一些實施例,對於本領域普通技術人員來講,在不付出創造性勞動性的前提下,還可以根據這些附圖獲得其它的附圖:In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are merely present For some of the embodiments of the invention, for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative labor:
第一圖為根據本發明用於操作襯底的設備的一實施例的立體結構示意圖。The first figure is a three-dimensional schematic diagram of an embodiment of an apparatus for operating a substrate according to the present invention.
第二圖為根據本發明用於操作襯底的設備的一實施例的分解結構示意圖。The second figure is a schematic diagram of an exploded structure of an embodiment of the apparatus for handling a substrate according to the present invention.
第三圖為根據本發明用於操作襯底的設備的一實施例的結構剖面示意圖。The third figure is a schematic cross-sectional view of an embodiment of the apparatus for handling a substrate according to the present invention.
181‧‧‧抽氣管 181‧‧‧Suction pipe
182‧‧‧勻氣盤 182‧‧‧Smoothing plate
183‧‧‧承載盤 183‧‧‧Carrier plate
200‧‧‧用於操作襯底的設備 200‧‧‧Equipment for handling substrates
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810867124.8 | 2018-08-01 | ||
CN201810867124.8A CN108933099B (en) | 2018-08-01 | 2018-08-01 | Apparatus for handling substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202007798A TW202007798A (en) | 2020-02-16 |
TWI708872B true TWI708872B (en) | 2020-11-01 |
Family
ID=64445283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107146145A TWI708872B (en) | 2018-08-01 | 2018-12-20 | Equipment for handling substrates |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN108933099B (en) |
TW (1) | TWI708872B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7134267B2 (en) * | 2018-08-01 | 2022-09-09 | 北京北方華創微電子装備有限公司 | Equipment for manipulating substrates |
CN115627533B (en) * | 2022-11-01 | 2023-11-14 | 江苏汉印机电科技股份有限公司 | Silicon carbide epitaxial wafer high temperature gets piece equipment |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5423558A (en) * | 1994-03-24 | 1995-06-13 | Ipec/Westech Systems, Inc. | Semiconductor wafer carrier and method |
US7055535B2 (en) * | 2000-10-31 | 2006-06-06 | Ebara Corporation | Holding unit, processing apparatus and holding method of substrates |
CN101202240A (en) * | 2006-12-13 | 2008-06-18 | 恩益禧电子股份有限公司 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100373549B1 (en) * | 2000-11-17 | 2003-02-26 | (주)케이.씨.텍 | Substrate fixing chuck and Substrate treating apparatus mounting the same |
JP4128023B2 (en) * | 2002-04-26 | 2008-07-30 | 株式会社トプコン | Wafer holding device |
CN106471614B (en) * | 2014-07-03 | 2020-08-25 | Lpe公司 | Tool for handling substrates, handling method and epitaxial reactor |
CN204675259U (en) * | 2015-06-04 | 2015-09-30 | 回音必集团抚州制药有限公司 | Bottle finished product grass-hopper easy to break |
CN106298618A (en) * | 2015-06-26 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer transmission set |
-
2018
- 2018-08-01 CN CN201810867124.8A patent/CN108933099B/en active Active
- 2018-12-20 TW TW107146145A patent/TWI708872B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5423558A (en) * | 1994-03-24 | 1995-06-13 | Ipec/Westech Systems, Inc. | Semiconductor wafer carrier and method |
US7055535B2 (en) * | 2000-10-31 | 2006-06-06 | Ebara Corporation | Holding unit, processing apparatus and holding method of substrates |
CN101202240A (en) * | 2006-12-13 | 2008-06-18 | 恩益禧电子股份有限公司 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
CN108933099B (en) | 2024-01-05 |
TW202007798A (en) | 2020-02-16 |
CN108933099A (en) | 2018-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI708872B (en) | Equipment for handling substrates | |
TWI817683B (en) | Semiconductor process chamber, semiconductor process equipment and semiconductor process method | |
JP2017216441A5 (en) | ||
WO2009045844A2 (en) | Non contact substrate chuck | |
CN112593199B (en) | Semiconductor process equipment and bearing device | |
TW202025367A (en) | Multi-station processing chamber for semiconductor | |
WO2017066311A1 (en) | Substrate carrier for active/passive bonding and de-bonding of a substrate | |
CN104538333A (en) | Tray for eliminating warping of wafer | |
CN110875167B (en) | Cooling chamber and semiconductor processing equipment | |
WO2020024837A1 (en) | Device for operating substrate | |
TWI615502B (en) | Bernoulli susceptor and epitaxial growth equipment | |
TWI678759B (en) | Non-contact substrate handling equipment | |
CN207398070U (en) | A kind of dry etching device | |
CN209471946U (en) | Sucker is used in a kind of detection of wafer | |
CN104046962B (en) | A kind of axially strength drives planetary rotation device | |
CN107346757B (en) | Transmission chamber and semiconductor processing equipment | |
CN109536927B (en) | Feeding system suitable for ultra-large scale atomic layer deposition | |
CN208580730U (en) | Contactless substrate-operations equipment | |
CN208478312U (en) | Equipment for operating substrate | |
WO2023116159A1 (en) | Vacuum adsorption system and method | |
CN104103482B (en) | Wafer process cavity | |
CN105575873B (en) | Ring pressing mechanism and semiconductor processing equipment | |
CN211017011U (en) | Wafer fixing table and wafer bonding equipment | |
CN209652421U (en) | A kind of feeding system suitable for ultra-large atomic layer deposition | |
CN104616956A (en) | Plasma etching apparatus and plasma etching method |