CN211017011U - Wafer fixing table and wafer bonding equipment - Google Patents
Wafer fixing table and wafer bonding equipment Download PDFInfo
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- CN211017011U CN211017011U CN201921582011.XU CN201921582011U CN211017011U CN 211017011 U CN211017011 U CN 211017011U CN 201921582011 U CN201921582011 U CN 201921582011U CN 211017011 U CN211017011 U CN 211017011U
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Abstract
The embodiment of the application discloses a wafer fixing table and wafer bonding equipment. The wafer fixing table comprises: the bearing area is used for placing a wafer; the first air pressure adjusting assembly is positioned in a first area corresponding to the central sub-area of the bearing area, and is used for adsorbing and fixing the wafer on the bearing area through air suction before the wafer is bonded, and separating the wafer from the bearing area through ventilation in the wafer bonding process; the first gas regulating assembly keeps the ventilation rate in all bonding directions formed from the center of the wafer to different edge positions consistent in the wafer bonding process; the second air pressure adjusting assembly is positioned in a second area corresponding to the edge sub-area of the bearing area, wherein the edge sub-area is positioned on the periphery of the central sub-area; and the second air pressure adjusting assembly is used for ventilating or exhausting air according to the bonding conditions in different bonding directions in the wafer bonding process so as to adjust the bonding speeds in different bonding directions.
Description
Technical Field
The embodiment of the application relates to semiconductor technology, and relates to but is not limited to a wafer fixing table and wafer bonding equipment.
Background
The wafer bonding technology is that two wafers are tightly bonded together through chemical or physical action, atoms of a bonding interface are acted by external force to react to form covalent bonds to be bonded into a whole, and the interface achieves certain bonding strength. In the three-dimensional integration process, the wafer bonding process is one of the core processes, wherein the wafer bonding alignment accuracy is an important parameter for measuring the wafer bonding process. The wafer bonding alignment precision can affect the electrical performance of the product, and the performance and yield of the product can be effectively improved by improving the bonding alignment precision.
Disclosure of Invention
In view of the above, embodiments of the present disclosure provide a fixing table for a wafer and a wafer bonding apparatus.
According to a first aspect of the embodiments of the present application, there is provided a fixing stage for a wafer, the fixing stage including:
the bearing area is used for placing the wafer;
the first air pressure adjusting assembly is positioned in a first area corresponding to a central sub-area of the bearing area, and is used for adsorbing and fixing the wafer on the bearing area through air suction before wafer bonding and separating the wafer from the bearing area through ventilation in the wafer bonding process; the first gas regulating component keeps the ventilation rate in all bonding directions formed by the wafer center to different edge positions consistent in the wafer bonding process;
the second air pressure adjusting assembly is positioned in a second area corresponding to an edge sub-area of the bearing area, wherein the edge sub-area is positioned on the periphery of the central sub-area;
and the second air pressure adjusting assembly is used for ventilating or exhausting air according to bonding conditions in different bonding directions in the wafer bonding process so as to adjust the bonding speeds in different bonding directions.
In some embodiments, the second air pressure adjusting assemblies are divided into at least one group, and two second air pressure adjusting assemblies in the same group are symmetrically distributed in the second area with the center of the bearing area; and the two second air pressure adjusting assemblies which are symmetrically distributed adopt the same air pressure adjusting parameter to control ventilation or air suction in the same bonding direction.
In some embodiments, the second air pressure regulating assembly comprises:
at least one control valve for adjusting the ventilation or air suction speed of the second air pressure adjusting assembly through the switching state and/or switching degree of the control valve.
In some embodiments, the same set of two second air pressure regulating assemblies is used to regulate the rate of venting or pumping by the same control valve.
In some embodiments, the central sub-region comprises at least one first type of gas hole, wherein the first type of gas hole is in communication with the first pneumatic pressure regulating assembly;
and/or the presence of a gas in the gas,
the edge sub-region includes at least one second type of air hole, wherein the second type of air hole is in communication with the second air pressure regulating assembly.
In some embodiments, the load bearing area is circular;
the first air holes are annularly distributed by taking the center of the bearing area as a circle center; and/or the second type of air holes are annularly distributed by taking the center of the bearing area as a circle center.
In some embodiments, the first type of air holes are annularly distributed in at least two groups with different radii, wherein the first type of air holes are sequentially ventilated in the order of the radii from small to large in the wafer bonding process, so that the wafer is gradually separated from the bearing region from the center of a circle to the circumferential direction.
According to a second aspect of embodiments of the present application, there is provided a wafer bonding apparatus, the apparatus including:
the reaction chamber is used for placing any one of the fixed platforms;
and the transfer assembly is used for moving the wafer into or out of the fixed table in the reaction chamber.
In some embodiments, the fixed stage is horizontally placed inside the reaction chamber, wherein the bearing area of the fixed stage is horizontally upward;
the apparatus further comprises:
the wafer fixing assembly is positioned above the fixing table and comprises a horizontal downward bearing area; the horizontal downward bearing area is used for fixing and placing another wafer required by wafer bonding.
In some embodiments, the apparatus further comprises:
and the position adjusting device is used for adjusting the position of the fixed table and/or the wafer fixing component.
In the embodiment of the application, the second air pressure adjusting assembly capable of controlling air pressures in different bonding directions is arranged at the edge of the fixing table of the wafer, and the air pressure is adjusted in the wafer bonding process, so that the bonding speeds in different bonding directions are controlled. Therefore, when bonding alignment accuracy of the wafer in certain directions is easy to be abnormal, stress of the wafer in each direction can be adjusted by adjusting bonding speed in the directions, bonding alignment accuracy reduction caused by uneven stress caused by wafer deformation is compensated, and wafer bonding alignment accuracy is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a fixing stage for a wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another wafer fixing stage according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a fixing stage for a wafer according to another embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a fixing stage for a wafer according to another embodiment of the present disclosure;
FIG. 5 is a schematic view of a vacuum ring of the fixing table according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of a bonding precision detection result provided in an embodiment of the present application;
fig. 7 is a schematic structural diagram of another wafer fixing stage according to an embodiment of the present disclosure.
Detailed Description
An embodiment of the present invention provides a fixing stage for a wafer, as shown in fig. 1, the fixing stage 100 includes:
a carrying area 110 for placing the wafer;
the first air pressure adjusting assembly 120 is positioned in a first area corresponding to the central sub-area 111 of the bearing area, and is used for sucking and fixing the wafer on the bearing area through air suction before wafer bonding, and separating the wafer from the bearing area through air ventilation in the wafer bonding process; the first gas regulating component keeps the ventilation rate in all bonding directions formed by the wafer center to different edge positions consistent in the wafer bonding process;
a second air pressure adjusting assembly 130 located in a second region corresponding to the edge sub-region 112 of the bearing region, wherein the edge sub-region is located at the periphery of the central sub-region;
the second air pressure adjusting assembly 130 is configured to perform air ventilation or air suction according to bonding conditions in different bonding directions during the wafer bonding process, so as to adjust bonding speeds in different bonding directions.
The carrying area, i.e., the area on the fixing table where the wafer is placed, may be an area that conforms to the size and shape of the wafer. Wafers include, but are not limited to, chips made of semiconductor materials, which may be silicon chips with semi-finished devices or wiring. In the process of wafer bonding, two wafers are mutually attached, so that devices on the surfaces of the two wafers are aligned and tightly connected together.
Before the wafer is bonded, the first air pressure adjusting component enables the wafer to be tightly fixed on the bearing area by pumping air between the wafer and the bearing area. In the process of wafer bonding, the two wafers are aligned and attached together, and air can be introduced between the wafers and the bearing area through the first air pressure adjusting assembly, namely vacuum release is carried out, so that certain air pressure is provided to tightly press the two wafers, and then the bonding of the wafers is completed.
During the process, the first air pressure adjusting assembly is gradually ventilated from the center to the circumference, so that the wafer is gradually bonded from the center to the circumference. The first pneumatic pressure adjusting assembly is provided with uniform ventilation rate in all directions, but the wafer may have deformation in different situations, for example, the diameter of the wafer is elongated in a certain radial direction under the action of each process in the front-end process, so that the wafer becomes elliptical, and at the same time, the bonding alignment accuracy in different directions may be deviated. Therefore, the bonding speed in different directions is adjusted through the second air pressure adjusting assembly, and therefore bonding alignment accuracy is improved.
In some embodiments, as shown in fig. 2, the second air pressure adjusting assemblies 130 are divided into at least one group, and two second air pressure adjusting assemblies 130 in the same group are symmetrically distributed in the second area around the center of the bearing area 110; wherein, the two second air pressure adjusting assemblies 130 distributed symmetrically adopt the same air pressure adjusting parameter to control ventilation or air extraction in the same bonding direction. The bonding direction here refers to a direction in which bonding is gradually completed, that is, a propagation direction of a bonding wave, and for example, when bonding is gradually completed from a center of a circle to a circumference, the bonding direction is an extending direction from the center of the circle to each point on the circumference.
Since the deformation of the wafer generally occurs at two side edges of the wafer in the same diameter direction, the second air pressure adjusting assemblies can be arranged symmetrically in pairs and can adjust the air pressure simultaneously. For example, four air pressure adjusting assemblies are provided, which are respectively arranged at the positions of 0 °, 90 °, 180 ° and 270 ° from the designated direction of the carrying region, and two second air pressure adjusting assemblies for simultaneously controlling 0 ° and 180 °, and two air pressure adjusting assemblies for 90 ° and 180 °, so as to respectively control the wafer bonding speeds in the two directions.
Thus, the bonding alignment accuracy of the two side edges of the wafer in the diameter direction can be adjusted simultaneously.
In some embodiments, the second air pressure regulating assembly comprises:
at least one control valve for adjusting the ventilation or air suction speed of the second air pressure adjusting assembly through the switching state and/or switching degree of the control valve.
The second air pressure adjusting assembly adjusts the ventilation or air extraction speed through the control valve, so that air pressure in different directions can be independently controlled, and the bonding speeds in different directions can be adjusted. In the bonding process, bonding conditions such as bonding stress can be adjusted in real time through adjustment of bonding speed according to actual conditions of bonding, so that the yield of products is improved.
In some embodiments, the same set of two second air pressure regulating assemblies is used to regulate the rate of venting or pumping by the same control valve.
Because the two second air pressure adjusting assemblies are symmetrically distributed as a group, and each group adopts the same air pressure adjusting parameter, each group of second air pressure adjusting assemblies can be adjusted by the same control valve, thereby ensuring that the two second air pressure adjusting assemblies in a group have the same air pressure adjusting parameter.
In some embodiments, as shown in fig. 3, the central sub-region comprises at least one first type of air hole 121, wherein the first type of air hole 121 is in communication with the first air pressure regulating assembly 120;
and/or the presence of a gas in the gas,
the edge sub-region comprises at least one second type of air hole 131, wherein the second type of air hole 131 is in communication with the second air pressure regulating assembly 130.
The bearing area is provided with air holes for providing air passages for the first air pressure adjusting assembly and the second air pressure adjusting assembly, so that ventilation or air suction is realized. The central sub-area comprises a first type of air hole communicated with the first air pressure adjusting assembly and is controlled by the first air pressure adjusting assembly.
And the edge sub-region comprises a second type of air holes which are respectively controlled by different second air pressure adjusting components. Before the wafer bonding, the first air pressure adjusting assembly exhausts air through the first type of air holes to fix the wafer on the bearing area, and at the moment, the second air pressure adjusting assembly can be in a closed state and does not perform air ventilation or air exhaust. In the process of wafer bonding, the first air pressure adjusting assembly conducts ventilation through the first type of air holes, the second air pressure adjusting assembly conducts air suction or ventilation according to requirements, and bonding precision deviation in different directions in the bonding process is compensated.
In some embodiments, the load bearing area is circular;
the first air holes are annularly distributed by taking the center of the bearing area as a circle center; and/or the second type of air holes are annularly distributed by taking the center of the bearing area as a circle center.
The first type of air holes are distributed in a ring shape, so that uniform pressure can be generated when the wafer is adsorbed and fixed and air pressure is increased to release vacuum in the wafer bonding process, and the wafer is gradually bonded from the center to the circumference.
In some embodiments, as shown in fig. 4, the first type of air holes 121 are annularly distributed in at least two groups with different radii, wherein the first type of air holes 121 are sequentially ventilated in a sequence of decreasing radii to increasing radii during wafer bonding, so that the wafer is gradually separated from the carrying region from the center of the circle to the circumferential direction.
At least two groups of first-type air holes with different radiuses are distributed on the bearing area from the center to the circumference, and each group of air holes form a circular ring. During the bonding process of the wafer, the air pressure can be increased by sequentially ventilating from inside to outside, so that the bonding of the wafer is gradually completed from inside to outside.
In the embodiment of the present application, since the first type of air holes on each ring are simultaneously ventilated and provide the same air pressure, if only the first air pressure adjusting assembly is used for adjusting, the bonding speed of the wafer in each direction is the same. Therefore, the deviation of bonding alignment accuracy caused by the deformation of the wafer is compensated through the adjustment of the second air pressure adjusting assembly in different directions, so that the bonding alignment accuracy is improved.
The embodiment of the present application further provides a wafer bonding apparatus, the apparatus includes:
the reaction chamber is used for placing the fixed table provided by any one of the embodiments;
and the transfer assembly is used for moving the wafer into or out of the fixed table in the reaction chamber.
In some embodiments, the fixed stage is horizontally placed inside the reaction chamber, wherein the bearing area of the fixed stage is horizontally upward;
the apparatus further comprises:
the wafer fixing assembly is positioned above the fixing table and comprises a horizontal downward bearing area; the bearing area of the wafer fixing component is used for fixing and placing another wafer required by wafer bonding.
In some embodiments, the apparatus further comprises:
and the position adjusting device is used for adjusting the position of the fixed table and/or the wafer fixing component.
The wafer fixing component in the wafer bonding apparatus may also adopt the structure of the fixing table provided in any of the above embodiments.
The present application also provides the following examples:
in the integrated circuit manufacturing process, three-dimensional integration is a solution for improving the performance of a chip. The performance of the chips can be improved by three-dimensional integration of two or more chips with the same or different functions, and simultaneously, the metal interconnection between the functional chips can be greatly shortened, so that the heat generation, the power consumption and the delay in the use process of the chips are reduced.
In the three-dimensional integration process, the bonding process of the wafer is the key point, wherein the wafer bonding alignment precision is the core parameter for measuring the wafer bonding process. According to the propagation behavior of the bonding wave under different parameters obtained by monitoring, the bonding alignment precision can be monitored, so that the optimization of the parameters is facilitated. The bonding wave here refers to a propagation phenomenon that occurs gradually during bonding of a wafer. For example, if bonding occurs from the center of the wafer to the outer edge of the wafer, the bonding wave may be considered as a propagation process from the inside to the outside, and if there is a difference in propagation of the bonding wave in each direction, it is indicated that there is a deviation in alignment accuracy in the bonding process.
The wafer bonding alignment accuracy in the three-dimensional integration process is an important factor affecting the overall defect rate of the product, for example, affecting the electrical performance of the product. Therefore, the bonding alignment precision is improved, and the performance and yield of products can be effectively improved.
After the wafer bonding is completed, whether the current parameters are sufficiently optimized or stable can be deduced by detecting the Residual of the bonding. The incoming expansion X-Y (form expansion parameter of incoming material) of the wafer is one of the important factors influencing bonding Residual.
Since the fixed table of the wafer bonding apparatus has the inner, middle and outer three-turn vacuum rings, as shown in fig. 5, during the wafer bonding process, it is necessary to release the vacuum in the order of inner, middle and outer, the bonding wave propagates only from the center of the wafer to the outer turn, and since the propagation speeds of the bonding wave in all directions are consistent, when the incomings expansion X-Y of the wafer is not 0, the alignment accuracy is reduced. As shown in FIG. 6, when X-Y is equal to 0, the wafer is not deformed and Residual is low in all directions. When X-Y is less than 0, Residual in the Y direction is high. When X-Y is greater than 0, Residual in the X direction is high.
Therefore, the embodiment of the application adjusts the propagation speed of the bonding wave by adjusting the vacuum release speed in different directions, so that the Residual in the deformation direction is reduced, and the bonding alignment precision is improved. As shown in fig. 7, in the outer circle of the fixed stage, for example, in the range of 140mm to 150mm (when the radius of the wafer is about 150 mm), one single controllable vacuum region 10 is opened in the directions of 0 °, 90 °, 180 ° and 270 °, and the vacuum regions 10 of 0 ° and 180 °, 90 ° and 270 ° are controlled by two separate control valves, respectively. Through setting up the order of vacuum release, change the action of bonding wave, compensate the influence that the wafer warp and bring to promote the alignment precision of wafer bonding, promote the product yield.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only for the embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A platen for a wafer, the platen comprising:
the bearing area is used for placing the wafer;
the first air pressure adjusting assembly is positioned in a first area corresponding to a central sub-area of the bearing area, and is used for adsorbing and fixing the wafer on the bearing area through air suction before wafer bonding and separating the wafer from the bearing area through ventilation in the wafer bonding process; the first air pressure adjusting assembly keeps the ventilation rate in all bonding directions formed by the wafer center to different edge positions consistent in the wafer bonding process;
the second air pressure adjusting assembly is positioned in a second area corresponding to an edge sub-area of the bearing area, wherein the edge sub-area is positioned on the periphery of the central sub-area;
and the second air pressure adjusting assembly is used for ventilating or exhausting air according to bonding conditions in different bonding directions in the wafer bonding process so as to adjust the bonding speeds in different bonding directions.
2. The fixed station of claim 1, wherein the second pneumatic adjustment assemblies are divided into at least one group, and two of the second pneumatic adjustment assemblies in the same group are symmetrically distributed in the second area with the center of the bearing area; and the two second air pressure adjusting assemblies which are symmetrically distributed adopt the same air pressure adjusting parameter to control ventilation or air suction in the same bonding direction.
3. The fixture of claim 2, wherein the second air pressure adjustment assembly comprises:
at least one control valve for adjusting the ventilation or air suction speed of the second air pressure adjusting assembly through the switching state and/or switching degree of the control valve.
4. A mounting table according to claim 3, wherein the same set of two second air pressure adjustment assemblies are controlled by the same control valve to adjust the rate of aeration or aspiration.
5. The platen of claim 1, wherein the central sub-region includes at least one first type of air vent, wherein the first type of air vent is in communication with the first air pressure adjustment assembly;
and/or the presence of a gas in the gas,
the edge sub-region includes at least one second type of air hole, wherein the second type of air hole is in communication with the second air pressure regulating assembly.
6. A fixed station as claimed in claim 5, wherein the bearing area is circular;
the first air holes are annularly distributed by taking the center of the bearing area as a circle center; and/or the second type of air holes are annularly distributed by taking the center of the bearing area as a circle center.
7. The fixed station of claim 6, wherein the first type of air holes are distributed in at least two groups of circles with different radiuses, wherein the first type of air holes are sequentially ventilated from small radiuses to large radiuses in the wafer bonding process, so that the wafer is gradually separated from the bearing region from the center of the circle to the circumferential direction.
8. A wafer bonding apparatus, characterized in that the apparatus comprises:
a reaction chamber for accommodating the fixing table of any one of claims 1 to 7;
and the transfer assembly is used for moving the wafer into or out of the fixed table in the reaction chamber.
9. The apparatus of claim 8, wherein the fixed stage is horizontally disposed inside the reaction chamber, wherein a carrying area of the fixed stage is horizontally upward;
the apparatus further comprises:
the wafer fixing assembly is positioned above the fixing table and comprises a horizontal downward bearing area; the bearing area of the wafer fixing component is used for fixing and placing another wafer required by wafer bonding.
10. The apparatus of claim 9, further comprising:
and the position adjusting device is used for adjusting the position of the fixed table and/or the wafer fixing component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921582011.XU CN211017011U (en) | 2019-09-20 | 2019-09-20 | Wafer fixing table and wafer bonding equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921582011.XU CN211017011U (en) | 2019-09-20 | 2019-09-20 | Wafer fixing table and wafer bonding equipment |
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| CN211017011U true CN211017011U (en) | 2020-07-14 |
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| CN201921582011.XU Active CN211017011U (en) | 2019-09-20 | 2019-09-20 | Wafer fixing table and wafer bonding equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113611635A (en) * | 2021-07-27 | 2021-11-05 | 芯盟科技有限公司 | Wafer bonding equipment and method |
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2019
- 2019-09-20 CN CN201921582011.XU patent/CN211017011U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113611635A (en) * | 2021-07-27 | 2021-11-05 | 芯盟科技有限公司 | Wafer bonding equipment and method |
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