TWI703228B - 濺射靶件及其製造方法 - Google Patents

濺射靶件及其製造方法 Download PDF

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Publication number
TWI703228B
TWI703228B TW105103890A TW105103890A TWI703228B TW I703228 B TWI703228 B TW I703228B TW 105103890 A TW105103890 A TW 105103890A TW 105103890 A TW105103890 A TW 105103890A TW I703228 B TWI703228 B TW I703228B
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TW
Taiwan
Prior art keywords
target
substrate
target parts
sputtering
surface roughness
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TW105103890A
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English (en)
Chinese (zh)
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TW201629250A (zh
Inventor
長田幸三
梶山純
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日商Ｊｘ金屬股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Products (AREA)
TW105103890A 2015-02-13 2016-02-04 濺射靶件及其製造方法 TWI703228B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015026533A JP5947413B1 (ja) 2015-02-13 2015-02-13 スパッタリングターゲット及びその製造方法
JP2015-026533 2015-02-13

Publications (2)

Publication Number Publication Date
TW201629250A TW201629250A (zh) 2016-08-16
TWI703228B true TWI703228B (zh) 2020-09-01

Family

ID=56329521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105103890A TWI703228B (zh) 2015-02-13 2016-02-04 濺射靶件及其製造方法

Country Status (5)

Country Link
JP (1) JP5947413B1 (ko)
KR (1) KR101980465B1 (ko)
CN (1) CN107532285B (ko)
TW (1) TWI703228B (ko)
WO (1) WO2016129621A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110431252A (zh) * 2017-03-31 2019-11-08 三井金属矿业株式会社 分割溅射靶
CN113463047B (zh) * 2021-08-18 2024-09-24 先导电子科技股份有限公司 一种靶材制备电动辅助装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000345326A (ja) * 1999-06-01 2000-12-12 Tosoh Corp 分割ｉｔｏスパッタリングターゲット
JP2002030341A (ja) * 2000-07-13 2002-01-31 Nippon Steel Corp 高溶接性レールの製造方法
TW200632121A (en) * 2004-12-14 2006-09-16 Heraeus Gmbh W C Tube target

Family Cites Families (16)

* Cited by examiner, † Cited by third party
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US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
JPH11236664A (ja) * 1998-02-24 1999-08-31 Mitsui Chem Inc スパッタリング用ターゲットのバッキングプレート
JP2000239838A (ja) * 1999-02-15 2000-09-05 Sony Corp 固相拡散接合されたスパッタリングターゲット組立体およびその製造方法
JP2001040471A (ja) * 1999-07-30 2001-02-13 Nikko Materials Co Ltd スパッタリング用ターゲット及びスパッタリング方法
JP2002004038A (ja) * 2000-06-23 2002-01-09 Nikko Materials Co Ltd パーティクル発生の少ないスパッタリングターゲット
JP4694104B2 (ja) * 2003-04-18 2011-06-08 大日本印刷株式会社 スパッタリングターゲット
JP4851777B2 (ja) * 2005-11-09 2012-01-11 三井金属鉱業株式会社 ＳｎＯ２系スパッタリングターゲットおよびその製造方法
JP5103911B2 (ja) * 2007-01-29 2012-12-19 東ソー株式会社 円筒形スパッタリングターゲット及びその製造方法
US20080236738A1 (en) * 2007-03-30 2008-10-02 Chi-Fung Lo Bonded sputtering target and methods of manufacture
JP5482020B2 (ja) * 2008-09-25 2014-04-23 東ソー株式会社 円筒形スパッタリングターゲット及びその製造方法
JP5830663B2 (ja) * 2012-05-21 2015-12-09 パナソニックＩｐマネジメント株式会社 スパッタリングターゲットとこれを使用したスパッタリング装置
US20150279636A1 (en) * 2012-10-09 2015-10-01 Applied Materials, Inc. Particle free rotary target and method of manufacturing thereof
JP2014105383A (ja) * 2012-11-29 2014-06-09 Tosoh Corp 円筒型スパッタリングターゲットおよびその製造方法
WO2014131458A1 (en) * 2013-02-28 2014-09-04 Applied Materials, Inc. Gapless rotary target and method of manufacturing thereof
JP6273735B2 (ja) * 2013-09-20 2018-02-07 東ソー株式会社 円筒形スパッタリングターゲットとその製造方法
JP6273734B2 (ja) * 2013-09-20 2018-02-07 東ソー株式会社 平板形スパッタリングターゲットとその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000345326A (ja) * 1999-06-01 2000-12-12 Tosoh Corp 分割ｉｔｏスパッタリングターゲット
JP2002030341A (ja) * 2000-07-13 2002-01-31 Nippon Steel Corp 高溶接性レールの製造方法
TW200632121A (en) * 2004-12-14 2006-09-16 Heraeus Gmbh W C Tube target

Also Published As

Publication number Publication date
CN107532285A (zh) 2018-01-02
KR20170094310A (ko) 2017-08-17
TW201629250A (zh) 2016-08-16
KR101980465B1 (ko) 2019-05-20
CN107532285B (zh) 2019-11-15
WO2016129621A1 (ja) 2016-08-18
JP2016148093A (ja) 2016-08-18
JP5947413B1 (ja) 2016-07-06

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