TWI701733B - 導電溝槽深度之感應監控 - Google Patents
導電溝槽深度之感應監控 Download PDFInfo
- Publication number
- TWI701733B TWI701733B TW107146304A TW107146304A TWI701733B TW I701733 B TWI701733 B TW I701733B TW 107146304 A TW107146304 A TW 107146304A TW 107146304 A TW107146304 A TW 107146304A TW I701733 B TWI701733 B TW I701733B
- Authority
- TW
- Taiwan
- Prior art keywords
- signal
- substrate
- conductive
- polishing
- depth
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/312,503 US9754846B2 (en) | 2014-06-23 | 2014-06-23 | Inductive monitoring of conductive trench depth |
| US14/312,503 | 2014-06-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201929080A TW201929080A (zh) | 2019-07-16 |
| TWI701733B true TWI701733B (zh) | 2020-08-11 |
Family
ID=54870327
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107146304A TWI701733B (zh) | 2014-06-23 | 2015-06-22 | 導電溝槽深度之感應監控 |
| TW104120022A TWI649799B (zh) | 2014-06-23 | 2015-06-22 | 導電溝槽深度之感應監控 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104120022A TWI649799B (zh) | 2014-06-23 | 2015-06-22 | 導電溝槽深度之感應監控 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9754846B2 (enExample) |
| JP (1) | JP6640754B2 (enExample) |
| KR (1) | KR102383708B1 (enExample) |
| CN (2) | CN111211052B (enExample) |
| TW (2) | TWI701733B (enExample) |
| WO (1) | WO2015200101A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9754846B2 (en) * | 2014-06-23 | 2017-09-05 | Applied Materials, Inc. | Inductive monitoring of conductive trench depth |
| TW201822953A (zh) * | 2016-09-16 | 2018-07-01 | 美商應用材料股份有限公司 | 基於溝槽深度的電磁感應監控進行的過拋光 |
| JP7062644B2 (ja) * | 2016-09-21 | 2022-05-06 | アプライド マテリアルズ インコーポレイテッド | フィルタリングのための補償を用いた終点検出 |
| TWI816620B (zh) * | 2017-04-21 | 2023-09-21 | 美商應用材料股份有限公司 | 使用神經網路來監測的拋光裝置 |
| TWI783037B (zh) * | 2017-09-25 | 2022-11-11 | 美商應用材料股份有限公司 | 使用機器學習方式以產生製程控制參數的半導體製造 |
| TWI845444B (zh) | 2018-04-03 | 2024-06-11 | 美商應用材料股份有限公司 | 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體 |
| JP7083279B2 (ja) | 2018-06-22 | 2022-06-10 | 株式会社荏原製作所 | 渦電流センサの軌道を特定する方法、基板の研磨の進行度を算出する方法、基板研磨装置の動作を停止する方法および基板研磨の進行度を均一化する方法、これらの方法を実行するためのプログラムならびに当該プログラムが記録された非一過性の記録媒体 |
| US11056351B2 (en) * | 2018-08-31 | 2021-07-06 | Synaptics Incorporated | Process monitor for wafer thinning |
| US11009798B2 (en) | 2018-09-05 | 2021-05-18 | Micron Technology, Inc. | Wafer alignment markers, systems, and related methods |
| US11251096B2 (en) * | 2018-09-05 | 2022-02-15 | Micron Technology, Inc. | Wafer registration and overlay measurement systems and related methods |
| CN111886686B (zh) | 2018-09-26 | 2024-08-02 | 应用材料公司 | 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿 |
| JP7291558B2 (ja) * | 2019-07-03 | 2023-06-15 | 株式会社荏原製作所 | 渦電流センサ |
| JP7341022B2 (ja) | 2019-10-03 | 2023-09-08 | 株式会社荏原製作所 | 基板研磨装置および膜厚マップ作成方法 |
| JP7507576B2 (ja) * | 2020-03-17 | 2024-06-28 | 株式会社東京精密 | 研削装置 |
| WO2021231427A1 (en) | 2020-05-14 | 2021-11-18 | Applied Materials, Inc. | Technique for training neural network for use in in-situ monitoring during polishing and polishing system |
| TWI810069B (zh) | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
| KR102732531B1 (ko) | 2020-06-24 | 2024-11-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 패드 마모 보상을 이용한 기판 층 두께의 결정 |
| US11980995B2 (en) * | 2021-03-03 | 2024-05-14 | Applied Materials, Inc. | Motor torque endpoint during polishing with spatial resolution |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110189925A1 (en) * | 2010-01-29 | 2011-08-04 | Iravani Hassan G | High Sensitivity Real Time Profile Control Eddy Current Monitoring System |
| TW201422369A (zh) * | 2012-11-08 | 2014-06-16 | 應用材料股份有限公司 | 具有拉長區域監控之原位監控系統 |
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| US4000458A (en) | 1975-08-21 | 1976-12-28 | Bell Telephone Laboratories, Incorporated | Method for the noncontacting measurement of the electrical conductivity of a lamella |
| US6268618B1 (en) * | 1997-05-08 | 2001-07-31 | Showa Denko K.K. | Electrode for light-emitting semiconductor devices and method of producing the electrode |
| US6741076B2 (en) | 2000-04-07 | 2004-05-25 | Cuong Duy Le | Eddy current measuring system for monitoring and controlling a CMP process |
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| US9754846B2 (en) * | 2014-06-23 | 2017-09-05 | Applied Materials, Inc. | Inductive monitoring of conductive trench depth |
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2014
- 2014-06-23 US US14/312,503 patent/US9754846B2/en active Active
-
2015
- 2015-06-18 JP JP2016574899A patent/JP6640754B2/ja active Active
- 2015-06-18 CN CN201910937866.8A patent/CN111211052B/zh active Active
- 2015-06-18 CN CN201580029881.2A patent/CN106463380B/zh active Active
- 2015-06-18 WO PCT/US2015/036520 patent/WO2015200101A1/en not_active Ceased
- 2015-06-18 KR KR1020177002030A patent/KR102383708B1/ko active Active
- 2015-06-22 TW TW107146304A patent/TWI701733B/zh active
- 2015-06-22 TW TW104120022A patent/TWI649799B/zh active
-
2017
- 2017-09-01 US US15/694,632 patent/US10103073B2/en active Active
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2018
- 2018-10-02 US US16/150,009 patent/US10741459B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110189925A1 (en) * | 2010-01-29 | 2011-08-04 | Iravani Hassan G | High Sensitivity Real Time Profile Control Eddy Current Monitoring System |
| TW201422369A (zh) * | 2012-11-08 | 2014-06-16 | 應用材料股份有限公司 | 具有拉長區域監控之原位監控系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150371913A1 (en) | 2015-12-24 |
| CN111211052B (zh) | 2023-09-19 |
| WO2015200101A1 (en) | 2015-12-30 |
| CN111211052A (zh) | 2020-05-29 |
| CN106463380B (zh) | 2019-10-29 |
| JP2017520124A (ja) | 2017-07-20 |
| US10741459B2 (en) | 2020-08-11 |
| TW201603134A (zh) | 2016-01-16 |
| US10103073B2 (en) | 2018-10-16 |
| TWI649799B (zh) | 2019-02-01 |
| KR102383708B1 (ko) | 2022-04-05 |
| US9754846B2 (en) | 2017-09-05 |
| CN106463380A (zh) | 2017-02-22 |
| US20190035699A1 (en) | 2019-01-31 |
| US20170365532A1 (en) | 2017-12-21 |
| JP6640754B2 (ja) | 2020-02-05 |
| KR20170018960A (ko) | 2017-02-20 |
| TW201929080A (zh) | 2019-07-16 |
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