JP6640754B2 - 導電性トレンチの深さの誘導性モニタリング - Google Patents

導電性トレンチの深さの誘導性モニタリング Download PDF

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JP6640754B2
JP6640754B2 JP2016574899A JP2016574899A JP6640754B2 JP 6640754 B2 JP6640754 B2 JP 6640754B2 JP 2016574899 A JP2016574899 A JP 2016574899A JP 2016574899 A JP2016574899 A JP 2016574899A JP 6640754 B2 JP6640754 B2 JP 6640754B2
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substrate
polishing
sequence
layer
conductive
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Japanese (ja)
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JP2017520124A5 (enExample
JP2017520124A (ja
Inventor
ウェイ ルー，
ウェイ ルー，
チョーフー ワン，
チョーフー ワン，
ジーホン ワン，
ジーホン ワン，
ハサン ジー． イラヴァニ，
ハサン ジー． イラヴァニ，
ドミニク ジェー． ベンヴェニュ，
ドミニク ジェー． ベンヴェニュ，
インゲマール カールッソン，
インゲマール カールッソン，
ボグスロー エー． スウェデク，
ボグスロー エー． スウェデク，
ウェンチャン トゥー，
ウェンチャン トゥー，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016574899A 2014-06-23 2015-06-18 導電性トレンチの深さの誘導性モニタリング Active JP6640754B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/312,503 US9754846B2 (en) 2014-06-23 2014-06-23 Inductive monitoring of conductive trench depth
US14/312,503 2014-06-23
PCT/US2015/036520 WO2015200101A1 (en) 2014-06-23 2015-06-18 Inductive monitoring of conductive trench depth

Publications (3)

Publication Number Publication Date
JP2017520124A JP2017520124A (ja) 2017-07-20
JP2017520124A5 JP2017520124A5 (enExample) 2018-07-26
JP6640754B2 true JP6640754B2 (ja) 2020-02-05

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JP2016574899A Active JP6640754B2 (ja) 2014-06-23 2015-06-18 導電性トレンチの深さの誘導性モニタリング

Country Status (6)

Country Link
US (3) US9754846B2 (enExample)
JP (1) JP6640754B2 (enExample)
KR (1) KR102383708B1 (enExample)
CN (2) CN106463380B (enExample)
TW (2) TWI701733B (enExample)
WO (1) WO2015200101A1 (enExample)

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TWI783037B (zh) * 2017-09-25 2022-11-11 美商應用材料股份有限公司 使用機器學習方式以產生製程控制參數的半導體製造
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
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TWI809389B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
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Also Published As

Publication number Publication date
KR102383708B1 (ko) 2022-04-05
US10103073B2 (en) 2018-10-16
JP2017520124A (ja) 2017-07-20
CN106463380B (zh) 2019-10-29
TW201603134A (zh) 2016-01-16
CN106463380A (zh) 2017-02-22
TWI701733B (zh) 2020-08-11
US20170365532A1 (en) 2017-12-21
US9754846B2 (en) 2017-09-05
US20190035699A1 (en) 2019-01-31
WO2015200101A1 (en) 2015-12-30
TWI649799B (zh) 2019-02-01
CN111211052A (zh) 2020-05-29
US20150371913A1 (en) 2015-12-24
TW201929080A (zh) 2019-07-16
KR20170018960A (ko) 2017-02-20
CN111211052B (zh) 2023-09-19
US10741459B2 (en) 2020-08-11

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