TWI699619B - 圖案形成方法 - Google Patents

圖案形成方法 Download PDF

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Publication number
TWI699619B
TWI699619B TW105116918A TW105116918A TWI699619B TW I699619 B TWI699619 B TW I699619B TW 105116918 A TW105116918 A TW 105116918A TW 105116918 A TW105116918 A TW 105116918A TW I699619 B TWI699619 B TW I699619B
Authority
TW
Taiwan
Prior art keywords
group
meth
groups
acrylate
substituent
Prior art date
Application number
TW105116918A
Other languages
English (en)
Chinese (zh)
Other versions
TW201708960A (zh
Inventor
野田国宏
千坂博樹
塩田大
Original Assignee
日商東京應化工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商東京應化工業股份有限公司 filed Critical 日商東京應化工業股份有限公司
Publication of TW201708960A publication Critical patent/TW201708960A/zh
Application granted granted Critical
Publication of TWI699619B publication Critical patent/TWI699619B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C275/00—Derivatives of urea, i.e. compounds containing any of the groups, the nitrogen atoms not being part of nitro or nitroso groups
    • C07C275/04—Derivatives of urea, i.e. compounds containing any of the groups, the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms
    • C07C275/06—Derivatives of urea, i.e. compounds containing any of the groups, the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms of an acyclic and saturated carbon skeleton
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW105116918A 2015-06-24 2016-05-30 圖案形成方法 TWI699619B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-126921 2015-06-24
JP2015126921A JP6541460B2 (ja) 2015-06-24 2015-06-24 パターン形成方法

Publications (2)

Publication Number Publication Date
TW201708960A TW201708960A (zh) 2017-03-01
TWI699619B true TWI699619B (zh) 2020-07-21

Family

ID=57651391

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105116918A TWI699619B (zh) 2015-06-24 2016-05-30 圖案形成方法

Country Status (4)

Country Link
JP (1) JP6541460B2 (ja)
KR (1) KR102586524B1 (ja)
CN (1) CN106292205B (ja)
TW (1) TWI699619B (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200409145A (en) * 2001-12-11 2004-06-01 Agfa Gevaert Material for making a conductive pattern
TW200905421A (en) * 2007-06-12 2009-02-01 Toagosei Co Ltd Peeling agents for resist on conducting polymers, methods for peeling off resist film, and substrates having patterned conductive polymers
WO2011090114A1 (ja) * 2010-01-25 2011-07-28 東亞合成株式会社 導電性高分子を含む基材上のフォトレジスト用現像液、およびパターン形成方法
TW201344364A (zh) * 2012-03-19 2013-11-01 Jsr Corp 光阻圖型之形成方法及光阻組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4806506A (en) * 1987-09-14 1989-02-21 E. I. Du Pont De Nemours And Company Process for detackifying photopolymer flexographic printing plates
JP3254572B2 (ja) * 1996-06-28 2002-02-12 バンティコ株式会社 光重合性熱硬化性樹脂組成物
KR100499836B1 (ko) * 1996-06-28 2005-09-15 반티코 아게 광중합성열경화성수지조성물
JP4514546B2 (ja) 2004-08-03 2010-07-28 リケンテクノス株式会社 難燃フィルム、接着性難燃フィルム及びフラットケーブル
CN1970603A (zh) * 2005-11-23 2007-05-30 中国科学院化学研究所 一种本征型氟化光敏聚酰亚胺树脂及其制备方法
WO2007100078A1 (ja) * 2006-03-03 2007-09-07 Pi R & D Co., Ltd. スクリーン印刷用感光性インク組成物及びそれを用いたポジ型レリーフパターンの形成方法
US20100270055A1 (en) 2009-04-27 2010-10-28 Air Products And Chemicals, Inc. Electrically Conductive Films Formed From Dispersions Comprising Conductive Polymers and Polyurethanes
JP2013218223A (ja) * 2012-04-11 2013-10-24 Fujifilm Corp パターン形成方法、それに用いられる感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜、並びに、これらを用いる電子デバイスの製造方法、及び、電子デバイス
JP6087655B2 (ja) * 2013-02-18 2017-03-01 東京応化工業株式会社 現像液、及び感光性樹脂組成物の現像処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200409145A (en) * 2001-12-11 2004-06-01 Agfa Gevaert Material for making a conductive pattern
TW200905421A (en) * 2007-06-12 2009-02-01 Toagosei Co Ltd Peeling agents for resist on conducting polymers, methods for peeling off resist film, and substrates having patterned conductive polymers
WO2011090114A1 (ja) * 2010-01-25 2011-07-28 東亞合成株式会社 導電性高分子を含む基材上のフォトレジスト用現像液、およびパターン形成方法
TW201344364A (zh) * 2012-03-19 2013-11-01 Jsr Corp 光阻圖型之形成方法及光阻組成物

Also Published As

Publication number Publication date
JP6541460B2 (ja) 2019-07-10
CN106292205B (zh) 2020-12-18
KR20170000777A (ko) 2017-01-03
TW201708960A (zh) 2017-03-01
CN106292205A (zh) 2017-01-04
KR102586524B1 (ko) 2023-10-11
JP2017009868A (ja) 2017-01-12

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