TWI699006B - p型不純物擴散組成物、使用其的半導體元件的製造方法及太陽電池的製造方法 - Google Patents

p型不純物擴散組成物、使用其的半導體元件的製造方法及太陽電池的製造方法 Download PDF

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Publication number
TWI699006B
TWI699006B TW105131132A TW105131132A TWI699006B TW I699006 B TWI699006 B TW I699006B TW 105131132 A TW105131132 A TW 105131132A TW 105131132 A TW105131132 A TW 105131132A TW I699006 B TWI699006 B TW I699006B
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TW
Taiwan
Prior art keywords
impurity diffusion
type impurity
carbons
group
diffusion composition
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TW105131132A
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English (en)
Chinese (zh)
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TW201712882A (zh
Inventor
北田剛
稲葉智雄
池上由洋
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日商東麗股份有限公司
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Publication of TW201712882A publication Critical patent/TW201712882A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L2031/0344—Organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
TW105131132A 2015-09-29 2016-09-28 p型不純物擴散組成物、使用其的半導體元件的製造方法及太陽電池的製造方法 TWI699006B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-190906 2015-09-29
JP2015190906 2015-09-29
JP2016-161027 2016-08-19
JP2016161027 2016-08-19

Publications (2)

Publication Number Publication Date
TW201712882A TW201712882A (zh) 2017-04-01
TWI699006B true TWI699006B (zh) 2020-07-11

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Family Applications (1)

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TW105131132A TWI699006B (zh) 2015-09-29 2016-09-28 p型不純物擴散組成物、使用其的半導體元件的製造方法及太陽電池的製造方法

Country Status (5)

Country Link
JP (1) JP6772836B2 (ja)
KR (1) KR20180063056A (ja)
CN (1) CN108028188B (ja)
TW (1) TWI699006B (ja)
WO (1) WO2017057238A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7172994B2 (ja) * 2018-03-16 2022-11-16 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026523A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、並びに、太陽電池素子及び太陽電池
TW201335278A (zh) * 2012-02-23 2013-09-01 Hitachi Chemical Co Ltd 不純物擴散層形成組成物、帶有不純物擴散層的半導體基板的製造方法以及太陽電池元件的製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5935256B2 (ja) * 2011-07-22 2016-06-15 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP6310649B2 (ja) 2012-07-26 2018-04-11 東京応化工業株式会社 不純物拡散成分の拡散方法、及び太陽電池の製造方法
CN105378895B (zh) * 2013-07-04 2018-03-02 东丽株式会社 杂质扩散组合物及半导体元件的制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026523A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、並びに、太陽電池素子及び太陽電池
TW201335278A (zh) * 2012-02-23 2013-09-01 Hitachi Chemical Co Ltd 不純物擴散層形成組成物、帶有不純物擴散層的半導體基板的製造方法以及太陽電池元件的製造方法

Also Published As

Publication number Publication date
CN108028188A (zh) 2018-05-11
KR20180063056A (ko) 2018-06-11
JP6772836B2 (ja) 2020-10-21
CN108028188B (zh) 2022-03-22
JPWO2017057238A1 (ja) 2018-07-12
TW201712882A (zh) 2017-04-01
WO2017057238A1 (ja) 2017-04-06

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