TWI694092B - 聚合物、有機層組成物及形成圖案的方法 - Google Patents
聚合物、有機層組成物及形成圖案的方法 Download PDFInfo
- Publication number
- TWI694092B TWI694092B TW107146112A TW107146112A TWI694092B TW I694092 B TWI694092 B TW I694092B TW 107146112 A TW107146112 A TW 107146112A TW 107146112 A TW107146112 A TW 107146112A TW I694092 B TWI694092 B TW I694092B
- Authority
- TW
- Taiwan
- Prior art keywords
- substituted
- unsubstituted
- chemical formula
- polymer
- group
- Prior art date
Links
- 0 *(C=C1)c2c1cc(cc(cc(cccc1)c1c1)*1c1)c1c2 Chemical compound *(C=C1)c2c1cc(cc(cc(cccc1)c1c1)*1c1)c1c2 0.000 description 9
- DYRKSIALLJSWFP-UHFFFAOYSA-N IN1C2=C(C=C3)c4c5c3cccc5ccc4CC2C=C1 Chemical compound IN1C2=C(C=C3)c4c5c3cccc5ccc4CC2C=C1 DYRKSIALLJSWFP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0180152 | 2017-12-26 | ||
??10-2017-0180152 | 2017-12-26 | ||
KR1020170180152A KR102171074B1 (ko) | 2017-12-26 | 2017-12-26 | 중합체, 유기막 조성물 및 패턴 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201927842A TW201927842A (zh) | 2019-07-16 |
TWI694092B true TWI694092B (zh) | 2020-05-21 |
Family
ID=67067786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107146112A TWI694092B (zh) | 2017-12-26 | 2018-12-20 | 聚合物、有機層組成物及形成圖案的方法 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR102171074B1 (ko) |
CN (1) | CN111542558B (ko) |
TW (1) | TWI694092B (ko) |
WO (1) | WO2019132178A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102101275B1 (ko) * | 2019-10-10 | 2020-05-15 | 로움하이텍 주식회사 | 신규 중합체 및 이를 포함하는 반도체 제조용 레지스트 하층막 조성물 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170037441A (ko) * | 2015-09-25 | 2017-04-04 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 및 패턴형성방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013146670A1 (ja) * | 2012-03-27 | 2013-10-03 | 日産化学工業株式会社 | フェニルインドール含有ノボラック樹脂を含むレジスト下層膜形成組成物 |
KR101788091B1 (ko) * | 2014-09-30 | 2017-11-15 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 유기막, 및 패턴형성방법 |
KR101821734B1 (ko) * | 2015-02-17 | 2018-01-24 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 유기막, 및 패턴형성방법 |
KR101821735B1 (ko) * | 2015-03-20 | 2018-01-24 | 삼성에스디아이 주식회사 | 유기막 조성물, 유기막, 및 패턴형성방법 |
US9971243B2 (en) * | 2015-06-10 | 2018-05-15 | Samsung Sdi Co., Ltd. | Polymer, organic layer composition, organic layer, and method of forming patterns |
KR101884447B1 (ko) * | 2015-07-06 | 2018-08-01 | 삼성에스디아이 주식회사 | 모노머, 유기막 조성물, 유기막, 및 패턴형성방법 |
KR101848344B1 (ko) * | 2015-10-23 | 2018-04-12 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 및 패턴형성방법 |
US20180356732A1 (en) * | 2015-12-01 | 2018-12-13 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing indolocarbazole novolak resin |
WO2017115978A1 (ko) * | 2015-12-29 | 2017-07-06 | 삼성에스디아이 주식회사 | 유기막 조성물 및 패턴형성방법 |
KR101962419B1 (ko) * | 2016-01-20 | 2019-03-26 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 및 패턴형성방법 |
-
2017
- 2017-12-26 KR KR1020170180152A patent/KR102171074B1/ko active IP Right Grant
-
2018
- 2018-09-17 WO PCT/KR2018/010934 patent/WO2019132178A1/ko active Application Filing
- 2018-09-17 CN CN201880079125.4A patent/CN111542558B/zh active Active
- 2018-12-20 TW TW107146112A patent/TWI694092B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170037441A (ko) * | 2015-09-25 | 2017-04-04 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 및 패턴형성방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20190078303A (ko) | 2019-07-04 |
CN111542558B (zh) | 2023-07-25 |
TW201927842A (zh) | 2019-07-16 |
CN111542558A (zh) | 2020-08-14 |
KR102171074B1 (ko) | 2020-10-28 |
WO2019132178A1 (ko) | 2019-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI609030B (zh) | 聚合物、有機層組成物及形成圖案的方法 | |
TWI619739B (zh) | 聚合物、有機層組成物、有機層以及形成圖案的方法 | |
TWI637975B (zh) | 聚合物、有機層組成物以及形成圖案的方法 | |
CN108291013B (zh) | 聚合物、有机层组成物及图案形成方法 | |
TWI597321B (zh) | 有機層組成物以及形成圖案的方法 | |
KR20130078432A (ko) | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 | |
TWI602845B (zh) | 聚合物、有機層組成物、有機層以及形成圖案的方法 | |
TW201816005A (zh) | 聚合物、有機層組成物與形成圖案之方法 | |
TWI641913B (zh) | 聚合物、有機層組成物與形成圖案之方法 | |
TWI694092B (zh) | 聚合物、有機層組成物及形成圖案的方法 | |
TW201804256A (zh) | 有機層組成物及圖案形成方法 | |
TWI598379B (zh) | 聚合物、有機層組合物以及形成圖案的方法 | |
JP6853308B2 (ja) | 重合体、有機膜形成用組成物、およびパターン形成方法 | |
CN111315724B (zh) | 有机膜组合物 | |
KR102036681B1 (ko) | 화합물, 유기막 조성물, 및 패턴형성방법 | |
KR102127256B1 (ko) | 유기막 조성물, 중합체 및 패턴 형성 방법 | |
KR20190052478A (ko) | 모노머, 중합체, 유기막 조성물 및 패턴 형성 방법 | |
CN111344634B (zh) | 硬罩幕组成物与形成图案的方法 | |
KR101994366B1 (ko) | 중합체, 유기막 조성물 및 패턴형성방법 | |
KR20230137101A (ko) | 하드마스크 조성물, 및 패턴 형성 방법 |